Multilayer film for forming individualized pieces, and method for manufacturing semiconductor device

Abstract

The present invention discloses a multilayer film for forming individualized pieces. The multilayer film for forming individualized pieces comprises a base material film, an adhesive layer, and a film for forming individualized pieces in this order. The film for forming individualized pieces has a first thermosetting resin layer, a rigid material layer, and a second thermosetting resin layer in this order from the adhesive layer. The second thermosetting resin layer contains an epoxy resin, a curing agent, an elastomer, and silica particles that have the average primary particle diameter of 30-400 nm.

Description

Laminated film for forming individualized bodies and method for manufacturing semiconductor device

[0001] The present disclosure relates to a laminated film for forming individual bodies and a method for manufacturing a semiconductor device, and in particular to a semiconductor device having a dolmen structure including a substrate, a first chip arranged on the substrate, a plurality of support pieces arranged on the substrate around the first chip, and a second chip supported by the plurality of support pieces and arranged to cover the first chip.

[0002] In recent years, in the field of semiconductor devices, there has been a demand for higher integration, smaller size, and higher speed. As one aspect of semiconductor devices, a structure in which a semiconductor chip is stacked on a controller chip disposed on a substrate has attracted attention. For example, Patent Document 1 (Patent Document 1) discloses a semiconductor die assembly including a controller die and a memory die supported by a support member on the controller die. The semiconductor assembly 100 shown in FIG. 1A of Patent Document 1 can be said to have a dolmen structure. The semiconductor assembly 100 includes a package substrate 102, a controller die 103 disposed on its surface, memory dies 106a and 106b disposed above the controller die 103, and support members 130a and 130b supporting the memory die 106a.

[0003] Patent Document 1 discloses that a semiconductor material such as silicon can be used as the support member (support piece), more specifically, fragments of a semiconductor material obtained by dicing a semiconductor wafer can be used. Patent Documents 2 and 3 disclose that, instead of a semiconductor material such as silicon, individual pieces of a resin film having a multilayer structure mainly composed of a resin material can be used as the support member (support piece).

[0004] Patent Publication No. 2017-515306 International Publication No. 2020 / 217404 Japanese Patent Application Laid-Open No. 2022-082247

[0005] A support member (support piece) primarily composed of a resin material is formed by preparing a laminate film obtained by laminating, in this order, a base film, a pressure-sensitive adhesive layer, and a resin film having the above-described multilayer structure, and then dicing the resin film into individual pieces. The inventors have found that, when conventional resin films having a multilayer structure are diced into individual pieces, interfacial peeling may occur between layers of the resin film. Such interfacial peeling tends to occur particularly between layers located far from the pressure-sensitive adhesive layer, and there is a need to improve the adhesive strength between these layers.

[0006] The main object of the present disclosure is to provide a laminate film for forming a singulated body, which comprises a film for forming a singulated body that is singulated into multiple pieces by dicing, and which is capable of suppressing the occurrence of interfacial peeling between layers of the film when the film for forming a singulated body is diced into pieces.

[0007] One aspect of the present disclosure relates to a laminate film for forming an individual body, which includes a film for forming an individual body that is to be diced into multiple pieces. The laminate film for forming an individual body includes, in this order, a base film, an adhesive layer, and a film for forming an individual body. The film for forming an individual body includes, in this order from the adhesive layer, a first thermosetting resin layer, a rigid material layer, and a second thermosetting resin layer. The second thermosetting resin layer contains an epoxy resin, a curing agent, an elastomer, and silica particles having an average primary particle size of 30 to 400 nm. The rigid material layer is a layer having higher rigidity than the first thermosetting resin layer and the second thermosetting resin layer, and may be, for example, a polyimide layer.

[0008] According to the investigations of the present inventors, it has been found that when the second thermosetting resin layer contains silica particles having an average primary particle size of 30 to 400 nm, the adhesive strength between layers located away from the pressure-sensitive adhesive layer, i.e., the adhesive strength between the second thermosetting resin layer and the rigid material layer, is improved.

[0009] The first thermosetting resin layer may contain, like the second thermosetting resin layer, an epoxy resin, a curing agent, an elastomer, and silica particles having an average primary particle size of 30 to 400 nm. The compositions of the first thermosetting resin layer and the second thermosetting resin layer may be the same or different.

[0010] The singulated body-forming laminate film may be used in the manufacturing process of a semiconductor device. The singulated body formed from the singulated body-forming laminate film can be used as a support piece in a semiconductor device having a dolmen structure including, for example, a substrate, a first chip disposed on the substrate, a plurality of support pieces disposed on the substrate around the first chip, and a second chip supported by the plurality of support pieces and disposed so as to cover the first chip. That is, the singulated body-forming laminate film can be used as a support piece-forming laminate film, and the singulated body-forming film can be used as a support piece-forming film. Furthermore, the singulated body formed from the singulated body-forming laminate film can be used as a reinforcing piece (reinforcing material) for a semiconductor chip, for example, by being attached to the semiconductor chip.

[0011] Another aspect of the present disclosure relates to a method for manufacturing a semiconductor device. The semiconductor device has a dolmen structure including a substrate, a first chip disposed on the substrate, a plurality of support pieces disposed on the substrate around the first chip, and a second chip supported by the plurality of support pieces and disposed so as to cover the first chip. The semiconductor device also includes an adhesive piece disposed on one surface of the second chip and sandwiched between the second chip and the plurality of support pieces. In one embodiment, the first chip may be in contact with the adhesive piece. In this case, the second chip may be disposed so as to be supported by the plurality of support pieces and the first chip. In another embodiment, the first chip may be spaced apart from the adhesive piece.

[0012] The method for manufacturing the semiconductor device includes the following steps. (A) A step of preparing a laminated film for forming a support piece, which comprises a base film, an adhesive layer, and a film for forming a support piece in this order, wherein the film for forming an individualized body has a first thermosetting resin layer, a rigid material layer, and a second thermosetting resin layer in this order from the adhesive layer, and the second thermosetting resin layer contains an epoxy resin, a curing agent, an elastomer, and silica particles having an average primary particle size of 30 to 400 nm; (B) A step of forming a plurality of support pieces on the surface of the adhesive layer by dicing the film for forming a support piece; (C) A step of picking up the support pieces from the adhesive layer; (D) A step of arranging a first chip on a substrate; (E) A step of arranging a plurality of support pieces on the substrate around the first chip or around an area where the first chip should be arranged; (F) A step of preparing a chip with an adhesive piece, which comprises a second chip and an adhesive piece provided on one side of the second chip; and (G) A step of constructing a dolmen structure by arranging the chips with adhesive pieces on the surfaces of a plurality of support pieces.

[0013] The method for manufacturing a semiconductor device may include a step of heating the support piece-forming film or the support piece prior to step (G).

[0014] The present disclosure provides the singulated body-forming laminate film according to [1] to [3], and the semiconductor device manufacturing method according to [4] to [7]. [1] The singulated body-forming laminate film includes, in this order, a base film, a pressure-sensitive adhesive layer, and a singulated body-forming film, the film having a first thermosetting resin layer, a rigid material layer, and a second thermosetting resin layer, in this order from the pressure-sensitive adhesive layer, the second thermosetting resin layer containing an epoxy resin, a curing agent, an elastomer, and silica particles having an average primary particle size of 30 to 400 nm. [2] The singulated body-forming laminate film according to [1], wherein the rigid material layer is a polyimide layer. [3] The singulated body-forming laminate film according to [1] or [2], wherein the first thermosetting resin layer contains an epoxy resin, a curing agent, an elastomer, and silica particles having an average primary particle size of 30 to 400 nm. [4] A method for manufacturing a semiconductor device having a dolmen structure including a substrate, a first chip arranged on the substrate, a plurality of support pieces arranged on the substrate around the first chip, and a second chip supported by the plurality of support pieces and arranged so as to cover the first chip, the method comprising: (A) preparing a support piece-forming laminated film comprising, in this order, a base film, an adhesive layer, and a support piece-forming film, the support piece-forming film having, from the adhesive layer onward, a first thermosetting resin layer, a rigid material layer, and a second thermosetting resin layer, in this order from the adhesive layer onward, and the second thermosetting resin layer containing an epoxy resin, a curing agent, an elastomer, and silica particles having an average primary particle size of 30 to 400 nm; (B) forming a plurality of support pieces on the surface of the adhesive layer by dicing the support piece forming film; (C) picking up the support pieces from the adhesive layer; (D) arranging a first chip on a substrate; (E) arranging a plurality of the support pieces on the substrate around the first chip or around an area where the first chip is to be arranged; (F) preparing an adhesive piece-attached chip including a second chip and an adhesive piece provided on one side of the second chip; and (G) constructing a dolmen structure by arranging the adhesive piece-attached chip on the surfaces of a plurality of the support pieces.[5] The method for manufacturing a semiconductor device according to [4], which includes a step of heating the support piece-forming film or the support piece before step (G). [6] The method for manufacturing a semiconductor device according to [4] or [5], wherein the rigid material layer is a polyimide layer. [7] The method for manufacturing a semiconductor device according to any one of [4] to [6], wherein the first thermosetting resin layer contains an epoxy resin, a curing agent, an elastomer, and silica particles having an average primary particle size of 30 to 400 nm.

[0015] According to the present disclosure, there is provided a laminate film for forming an individual body, which includes a film for forming an individual body that is to be singulated into a plurality of pieces by dicing, and which is capable of suppressing the occurrence of delamination between layers of the film when the film for forming an individual body is diced into individual pieces. Also, according to the present disclosure, there is provided a method for manufacturing a semiconductor device using such a laminate film for forming an individual body (laminated film for forming a support piece).

[0016] FIG. 1( a) is a plan view schematically illustrating one embodiment of a laminated film for forming singulated bodies, and FIG. 1( b) is a cross-sectional view taken along line b-b in FIG. 1( a). FIG. 2 is a cross-sectional view schematically illustrating a step of bonding an adhesive layer and a support piece-forming film together. FIG. 3 is a cross-sectional view schematically illustrating a first embodiment of a semiconductor device according to the present disclosure. FIGS. 4( a) and 4(b) are plan views schematically illustrating an example of the positional relationship between a first chip and multiple support pieces. FIGS. 5( a), 5(b), 5(c), and 5(d) are cross-sectional views schematically illustrating a support piece fabrication process. FIG. 6 is a cross-sectional view schematically illustrating a state in which multiple support pieces are arranged around a first chip on a substrate. FIG. 7 is a cross-sectional view schematically illustrating an example of a chip with adhesive pieces attached. FIG. 8 is a cross-sectional view schematically illustrating a dolmen structure formed on a substrate. FIG. 9 is a cross-sectional view schematically illustrating a second embodiment of a semiconductor device according to the present disclosure.

[0017] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings as appropriate. However, the present disclosure is not limited to the following embodiments. In the following embodiments, components (including steps, etc.) are not essential unless specifically stated. The sizes of the components in each figure are conceptual, and the relative size relationships between the components are not limited to those shown in each figure.

[0018] The same applies to the numerical values ​​and ranges in the present disclosure, and do not limit the present disclosure. In this specification, a numerical range indicated using "to" indicates a range that includes the numerical values ​​before and after "to" as the minimum and maximum values, respectively. In the numerical ranges described in stages in this specification, the upper or lower limit value described in one numerical range may be replaced with the upper or lower limit value of another numerical range described in stages. Furthermore, in the numerical ranges described in this specification, the upper or lower limit value of that numerical range may be replaced with a value shown in an example.

[0019] In this specification, the term "layer" includes not only a structure with a shape formed over the entire surface when observed in a plan view, but also a structure with a shape formed on a portion of the surface. Furthermore, in this specification, the term "process" includes not only an independent process, but also a process that cannot be clearly distinguished from other processes as long as the intended effect of the process is achieved.

[0020] In this specification, (meth)acrylate means acrylate or its corresponding methacrylate, and the same applies to other similar expressions such as (meth)acryloyl group, (meth)acrylic copolymer, etc.

[0021] Unless otherwise specified, each of the components and materials exemplified in this specification may be used alone or in combination of two or more.

[0022] [Laminated Film for Segmented Body Formation] Figure 1(a) is a plan view schematically illustrating one embodiment of a laminated film for segmented body formation, and Figure 1(b) is a cross-sectional view taken along line b-b in Figure 1(a). The laminated film for segmented body formation 20 (hereinafter sometimes simply referred to as "laminate film 20") comprises, in this order, a base film 1, a pressure-sensitive adhesive layer 2, and a film for segmented body formation D (hereinafter sometimes simply referred to as "film D") that is segmented into multiple pieces by dicing. The pressure-sensitive adhesive layer 2 is formed into a circular shape by punching or the like (see Figure 1(a)). The film D is formed into a circular shape by punching or the like, and has a smaller diameter than the pressure-sensitive adhesive layer 2 (see Figure 1(a)).

[0023] Examples of the substrate film 1 include films of polyester (polyethylene terephthalate (PET), polybutylene terephthalate, polyethylene naphthalate, etc.), polyolefin (polyethylene, polypropylene, etc.), polycarbonate, polyamide, polyimide, polyamideimide, polyetherimide, polyethersulfide, polyethersulfone, polyetherketone, polyphenylene ether, polyphenylene sulfide, and ionomer. These films may be single-layer films or multilayer films composed of two or more types of films. The thickness of the substrate film 1 may be, for example, 1 to 200 μm, 20 to 150 μm, or 30 to 130 μm.

[0024] The adhesive layer 2 is a layer made of an adhesive. The adhesive may be an adhesive commonly used in the relevant field, and may be either an ultraviolet-curable adhesive or a non-ultraviolet-curable adhesive. That is, the adhesive layer 2 may be either an ultraviolet-curable adhesive layer or a non-ultraviolet-curable adhesive layer. An ultraviolet-curable adhesive is an adhesive whose adhesiveness decreases upon exposure to ultraviolet light, and conventionally known adhesives may be used. Examples of ultraviolet-curable adhesives include resins having photoreactive carbon-carbon double bonds. More specifically, examples of such adhesives include acrylic resins. Examples of non-ultraviolet-curable adhesives include natural rubber, synthetic rubber, acrylic resins, polyvinyl ether resins, urethane resins, and silicone resins. The thickness of the adhesive layer 2 may be, for example, 1 to 100 μm.

[0025] Film D has a first thermosetting resin layer 5, a rigid material layer 6, and a second thermosetting resin layer 7, in this order from the pressure-sensitive adhesive layer 2. The second thermosetting resin layer 7 contains an epoxy resin, a curing agent, an elastomer, and silica particles having an average primary particle size of 30 to 400 nm. The inclusion of silica particles having an average primary particle size of 30 to 400 nm in the second thermosetting resin layer 7 tends to improve the adhesive strength between the second thermosetting resin layer 7 and the rigid material layer 6. The first thermosetting resin layer 5 may contain, for example, an epoxy resin, a curing agent, an elastomer, and silica particles. Like the second thermosetting resin layer 7, the first thermosetting resin layer 5 may contain an epoxy resin, a curing agent, an elastomer, and silica particles having an average primary particle size of 30 to 400 nm. The first thermosetting resin layer 5 contains silica particles having an average primary particle size of 30 to 400 nm, which also tends to improve the adhesive strength between the first thermosetting resin layer 5 and the rigid material layer 6. The composition of the first thermosetting resin layer 5 and the composition of the second thermosetting resin layer 7 may be the same as or different from each other. From the viewpoint of the efficiency of producing each layer, the composition of the first thermosetting resin layer 5 and the composition of the second thermosetting resin layer 7 may be the same as each other.

[0026] The second thermosetting resin layer 7 (and further the first thermosetting resin layer 5) can be obtained by molding a thermosetting resin composition containing an epoxy resin, a curing agent, an elastomer, and silica particles having an average primary particle size of 30 to 400 nm. The thermosetting resin composition may be in a semi-cured (B-stage) state and then converted to a cured (C-stage) state by heat treatment. The thermosetting resin composition may further contain a coupling agent, a curing accelerator, etc. as necessary. The first thermosetting resin layer 5 and the second thermosetting resin layer 7 may be in a semi-cured (B-stage) state and then converted to a cured (C-stage) state by heat treatment.

[0027] B-stage refers to an intermediate stage in the reaction of certain thermosetting resins where the material swells when in contact with certain liquids and softens when heated, but does not completely dissolve or melt; C-stage refers to the final stage in the reaction of certain thermosetting resins where the material becomes virtually insoluble and infusible.

[0028] (Epoxy Resin) Epoxy resin is a component that has the property of forming three-dimensional bonds between molecules and curing by heating or the like, and is a component that exhibits adhesive properties after curing. Any epoxy resin can be used without particular limitations as long as it has an epoxy group in the molecule. The epoxy resin may have two or more epoxy groups in the molecule.

[0029] Examples of epoxy resins include bisphenol-type epoxy resins such as bisphenol A-type epoxy resins, bisphenol F-type epoxy resins, and bisphenol S-type epoxy resins; and novolac-type epoxy resins such as phenol novolac-type epoxy resins and cresol novolac-type epoxy resins. Furthermore, commonly known epoxy resins such as stilbene-type epoxy resins, triazine-skeleton-containing epoxy resins, fluorene-skeleton-containing epoxy resins, triphenolmethane-type epoxy resins, biphenyl-type epoxy resins, xylylene-type epoxy resins, biphenylaralkyl-type epoxy resins, naphthalene-type epoxy resins, dicyclopentadiene-type epoxy resins, polyfunctional phenols, and diglycidyl ether compounds of polycyclic aromatics such as anthracene can be used.

[0030] The content of the epoxy resin may be 1 to 40% by mass based on the total amount of the thermosetting resin composition (first thermosetting resin layer 5 or second thermosetting resin layer 7). The content of the epoxy resin may be 2% by mass or more, 3% by mass or more, or 5% by mass or more based on the total amount of the thermosetting resin composition (first thermosetting resin layer 5 or second thermosetting resin layer 7), and may be 35% by mass or less, 30% by mass or less, or 25% by mass or less.

[0031] (Curing Agent) Examples of the curing agent include phenolic resins, ester compounds, aromatic amines, aliphatic amines, acid anhydrides, etc. Among these, the curing agent may be a phenolic resin from the viewpoint of achieving high adhesive strength. The phenolic resin may be any resin having a phenolic hydroxyl group in the molecule. Examples of phenolic resins include novolak-type phenolic resins obtained by condensing or co-condensing phenols such as phenol, cresol, resorcinol, catechol, bisphenol A, bisphenol F, phenylphenol, and aminophenol and / or naphthols such as α-naphthol, β-naphthol, and dihydroxynaphthalene with compounds having an aldehyde group such as formaldehyde under an acidic catalyst; phenol aralkyl resins, naphthol aralkyl resins, biphenyl aralkyl-type phenolic resins, and phenyl aralkyl-type phenolic resins synthesized from phenols such as phenol and / or naphthols with dimethoxyparaxylene or bis(methoxymethyl)biphenyl;

[0032] The content of the curing agent may be 1 to 40% by mass based on the total amount of the thermosetting resin composition (first thermosetting resin layer 5 or second thermosetting resin layer 7). The content of the curing agent may be 2% by mass or more, 3% by mass or more, or 5% by mass or more based on the total amount of the thermosetting resin composition (first thermosetting resin layer 5 or second thermosetting resin layer 7), and may be 30% by mass or less, 25% by mass or less, or 20% by mass or less.

[0033] (Elastomer) Examples of elastomers include acrylic resin, polyester resin, polyamide resin, polyimide resin, silicone resin, polybutadiene, acrylonitrile, epoxy-modified polybutadiene, maleic anhydride-modified polybutadiene, phenol-modified polybutadiene, and carboxy-modified acrylonitrile.

[0034] The elastomer may be an acrylic resin from the viewpoint of achieving high adhesive strength. The acrylic resin may be an acrylic resin such as an epoxy group-containing (meth)acrylic copolymer obtained by polymerizing a functional monomer having an epoxy group or a glycidyl group as a crosslinkable functional group, such as glycidyl acrylate or glycidyl methacrylate. Among these, the acrylic resin may be an epoxy group-containing (meth)acrylic acid ester copolymer or an epoxy group-containing acrylic rubber, preferably an epoxy group-containing acrylic rubber. The epoxy group-containing acrylic rubber is a rubber containing an acrylic acid ester as the main component and mainly containing epoxy groups, such as a copolymer of butyl acrylate and acrylonitrile, or a copolymer of ethyl acrylate and acrylonitrile. The acrylic resin may have not only epoxy groups but also crosslinkable functional groups such as alcoholic or phenolic hydroxyl groups or carboxyl groups.

[0035] Commercially available elastomers include, for example, SG-P3, SG-70L, SG-708-6, WS-023 EK30, and SG-280 EK23 (all manufactured by Nagase ChemteX Corporation).

[0036] The glass transition temperature (Tg) of the elastomer may be -50 to 50°C or -30 to 20°C, from the viewpoint of achieving high adhesive strength. The Tg of the elastomer refers to a value measured using a DSC (differential scanning calorimeter) (for example, Thermo Plus 2, manufactured by Rigaku Corporation). The weight average molecular weight (Mw) of the elastomer may be 50,000 to 1.6 million, 100,000 to 1.4 million, or 300,000 to 1.2 million, from the viewpoint of achieving high adhesive strength. The Mw of the elastomer refers to a value measured by gel permeation chromatography (GPC) and converted using a calibration curve based on standard polystyrene.

[0037] The content of the elastomer may be 30 to 90% by mass based on the total amount of the thermosetting resin composition (first thermosetting resin layer 5 or second thermosetting resin layer 7). The content of the elastomer may be 35% by mass or more, 40% by mass or more, or 45% by mass or more based on the total amount of the thermosetting resin composition (first thermosetting resin layer 5 or second thermosetting resin layer 7), and may be 85% by mass or less, 80% by mass or less, or 78% by mass or less.

[0038] (Silica Particles) The silica particles may include primary particles (particles that do not constitute secondary particles) that integrally form single particles based on their apparent geometrical form, and secondary particles that are formed by aggregation of a plurality of primary particles.

[0039] The average primary particle size of the silica particles (average particle size of the primary particles) is 30 to 400 nm from the viewpoint of suppressing the occurrence of delamination between layers of the film for forming singulated bodies (particularly between the second thermosetting resin layer 7 and the rigid material layer 6), and may be 35 nm or more, 40 nm or more, 45 nm or more, or 50 nm or more, and may be 380 nm or less, 350 nm or less, 320 nm or less, or 300 nm or less. The average primary particle size of the silica particles can be measured by the following method. First, a thermosetting resin layer (film-like molded product) made of a thermosetting resin composition is prepared. Next, the thermosetting resin layer (film-like molded product) is cut, and the cut surface (film cross section) is observed using a scanning electron microscope, and an image of the cut surface (film cross section) is taken. Next, the major axis of 50 primary particles of the silica particles is measured from the taken image, and the average value is taken as the average primary particle size.

[0040] The surfaces of the silica particles may be chemically modified. Examples of materials for chemically modifying the surfaces of the silica particles include silane coupling agents. Examples of the functional groups of the silane coupling agents include vinyl groups, acryloyl groups, epoxy groups, mercapto groups, amino groups, diamino groups, alkoxy groups, and ethoxy groups.

[0041] The chemically modified silica particles may be produced by a known method, or commercially available products may be used as they are.

[0042] The content of the silica particles may be 1 to 50% by mass based on the total amount of the thermosetting resin composition (first thermosetting resin layer 5 or second thermosetting resin layer 7). The content of the silica particles may be 3% by mass or more, 5% by mass or more, or 8% by mass or more based on the total amount of the thermosetting resin composition (first thermosetting resin layer 5 or second thermosetting resin layer 7), and may be 45% by mass or less, 40% by mass or less, or 35% by mass or less.

[0043] (Coupling Agent) The coupling agent may be a silane coupling agent. Examples of the silane coupling agent include γ-glycidoxypropyltrimethoxysilane, γ-ureidopropyltriethoxysilane, γ-mercaptopropyltrimethoxysilane, 3-phenylaminopropyltrimethoxysilane, and 3-(2-aminoethyl)aminopropyltrimethoxysilane. From the viewpoint of adhesive strength, the coupling agent may contain 3-phenylaminopropyltrimethoxysilane.

[0044] (Curing Accelerator) Examples of the curing accelerator include imidazoles and derivatives thereof, organic phosphorus compounds, secondary amines, tertiary amines, quaternary ammonium salts, etc. Among these, the curing accelerator may be imidazoles and derivatives thereof from the viewpoint of reactivity.

[0045] Examples of imidazoles include 2-methylimidazole, 1-benzyl-2-methylimidazole, 1-cyanoethyl-2-phenylimidazole, and 1-cyanoethyl-2-methylimidazole.

[0046] The thermosetting resin composition may further contain other components, such as a pigment, an ion scavenger, and an antioxidant.

[0047] The total content of the coupling agent, the curing accelerator, and other components may be 0.005 to 10 mass% based on the total amount of the thermosetting resin composition (first thermosetting resin layer 5 or second thermosetting resin layer 7).

[0048] The thickness of the first thermosetting resin layer 5 may be, for example, 3 to 150 μm or 10 to 100 μm. The thickness of the second thermosetting resin layer 7 may be, for example, 3 to 150 μm or 10 to 100 μm. The thickness of the first thermosetting resin layer 5 and the second thermosetting resin layer 7 may be the same or different, or may be the same.

[0049] The rigid material layer 6 may be, for example, a resin layer or a metal layer having higher rigidity than the first thermosetting resin layer 5 and the second thermosetting resin layer 7. Here, the rigidity can be based on various mechanical properties, for example, the tensile modulus of elasticity. The tensile modulus of elasticity can be measured, for example, in accordance with K7161-1:2014.

[0050] The resin layer serving as the rigid material layer 6 is made of a different material from the first thermosetting resin layer 5 and the second thermosetting resin layer 7, and may be, for example, a polyimide layer. When the rigid material layer 6 is a resin layer (polyimide layer), the rigid material layer 6 tends to have excellent pickup properties even after being diced into individual pieces, without the need for a thermal curing treatment of the first thermosetting resin layer 5 and the second thermosetting resin layer 7. The metal layer serving as the rigid material layer 6 may be, for example, a copper layer or an aluminum layer. When the rigid material layer 6 is a metal layer, in addition to excellent pickup properties, the optical contrast between the resin material and the metal material tends to provide excellent visibility during the pickup process.

[0051] The thickness of the stiff material layer 6 may be, for example, 5 to 200 μm or 10 to 150 μm.

[0052] The thickness of the film D (the thickness of all layers constituting the film D) may be, for example, 5 to 250 μm or 10 to 200 μm.

[0053] The laminated film 20 may be used in a manufacturing process of a semiconductor device. For example, individual pieces formed from the laminated film 20 can be used as support pieces in a semiconductor device having a dolmen structure including a substrate, a first chip arranged on the substrate, a plurality of support pieces arranged on the substrate around the first chip, and a second chip supported by the plurality of support pieces and arranged to cover the first chip.

[0054] Furthermore, the individual pieces formed from the laminated film 20 can also be used as reinforcing pieces (reinforcing materials) for the semiconductor chip by, for example, attaching them to the semiconductor chip. The individual pieces formed from the laminated film 20 can be manufactured by a method including steps (A) to (C) in the manufacturing method of a semiconductor device described below.

[0055] [Method for Manufacturing Laminated Film for Forming Segmented Bodies] The laminated film 20 can be produced, for example, by bonding a dicing film having a base film 1 and an adhesive layer 2 thereon, and a laminated film having a cover film 3 and a film D thereon (see FIG. 2). The dicing film can be obtained, for example, by a method including a step of applying an adhesive to the surface of the base film 1 to form the adhesive layer 2, and a step of processing the adhesive layer 2 into a predetermined shape (e.g., a circle) by punching or the like. The laminated film can be obtained by a method including a step of applying a thermosetting resin composition to the surface of the cover film 3 (e.g., a PET film or a polyethylene film) to form a second thermosetting resin layer 7, a step of forming a rigid material layer 6 (e.g., a polyimide layer) on the surface of the second thermosetting resin layer 7, a step of applying a thermosetting resin composition to the surface of the rigid material layer 6 to form a first thermosetting resin layer 5, and a step of processing the formed film D into a predetermined shape (e.g., a circle) by punching or the like. The laminated film can also be obtained by laminating one surface of the rigid material layer 6 to the first thermosetting resin layer 5, and then laminating the other surface of the rigid material layer 6 to the second thermosetting resin layer 7 provided on the cover film 3. When using the laminated film 20, the cover film 3 is peeled off at an appropriate time.

[0056] A varnish of a thermosetting resin composition (thermosetting resin varnish) may be used in forming the second thermosetting resin layer 7. When a thermosetting resin varnish is used, the components of the thermosetting resin composition are mixed or kneaded in a solvent to prepare a thermosetting resin varnish, and the obtained thermosetting resin varnish is applied, and the solvent is removed by heating and drying, thereby obtaining the second thermosetting resin layer 7.

[0057] The mixing or kneading can be carried out using a dispersing machine such as a conventional stirrer, a mortar and pestle, a triple roll mill, or a ball mill, and can be carried out by appropriately combining these.

[0058] The solvent used in preparing the thermosetting resin varnish is not limited as long as it can uniformly dissolve, knead, or disperse each component, and any conventionally known solvent can be used. Examples of such solvents include ketone solvents such as acetone, methyl ethyl ketone, methyl isobutyl ketone, and cyclohexanone, dimethylformamide, dimethylacetamide, N-methylpyrrolidone, toluene, and xylene.

[0059] The thermosetting resin varnish can be applied to the cover film or rigid material layer by any known method, such as knife coating, roll coating, spray coating, gravure coating, bar coating, or curtain coating. The heat drying is not particularly limited as long as the solvent used is sufficiently evaporated, and can be carried out at a temperature in the range of 50 to 150°C for 1 to 30 minutes. Heat drying may be carried out in stages at different heating temperatures for different heating times.

[0060] As with the second thermosetting resin layer 7, the first thermosetting resin layer 5 can be obtained by mixing or kneading the components of the thermosetting resin composition in a solvent to prepare a thermosetting resin varnish, applying the obtained thermosetting resin varnish, and removing the solvent by heating and drying.

[0061] [Semiconductor Device and Manufacturing Method Thereof] <First Embodiment> Figure 3 is a cross-sectional view schematically illustrating a first embodiment of a semiconductor device according to the present disclosure. The semiconductor device 100 shown in Figure 3 includes a substrate 10, a chip T1 (first chip) disposed on the surface of the substrate 10, multiple support pieces DXc disposed around the chip T1 on the surface of the substrate 10, a chip T2 (second chip) disposed above the chip T1, an adhesive piece Tc sandwiched between the chip T2 and the multiple support pieces DXc, chips T3 and T4 stacked on the chip T2, multiple wires w electrically connecting the chips T1 to T4 to electrodes (not shown) on the surface of the substrate 10, and a sealant 50 filling gaps between the chips T1 and T2. The support pieces DXc may be cured products obtained by singulating the film D.

[0062] In this embodiment, a dolmen structure is formed on the substrate 10 by multiple support pieces DXc, chips T2, and adhesive pieces Tc located between the support pieces DXc and chips T2. The chip T1 is in contact with the adhesive pieces Tc. That is, the adhesive pieces Tc are in contact with the upper surfaces of the chips T1 and the support pieces DXc. For example, by appropriately setting the thickness of the film DX, the position of the upper surface of the chips T1 and the position of the upper surface of the support pieces DXc can be made to coincide. At this time, a portion of the wire w electrically connecting the chip T1 to an electrode (not shown) on the surface of the substrate 10 is embedded in the adhesive pieces Tc.

[0063] As shown in FIG. 3 , the adhesive piece Tc between the chip T1 and the chip T2 covers the region R of the chip T2 facing the chip T1 and extends continuously from the region R to the peripheral edge of the chip T2. In other words, one adhesive piece Tc covers the region R of the chip T2 and is interposed between the chip T2 and multiple support pieces, bonding them together. Note that FIG. 3 illustrates an embodiment in which the adhesive piece Tc is provided to cover the entire one surface (bottom surface) of the chip T2. However, because the adhesive piece Tc may shrink during the manufacturing process of the semiconductor device 100, it is sufficient that the adhesive piece Tc substantially covers the entire one surface (bottom surface) of the chip T2. For example, some of the peripheral edge of the chip T2 may be uncovered by the adhesive piece Tc. The bottom surface of the chip T2 in FIG. 3 corresponds to the back surface of the chip. In recent years, the back surfaces of chips often have unevenness. Covering substantially the entire back surface of the chip T2 with the adhesive piece Tc can prevent cracks or breakage from occurring in the chip T2.

[0064] The substrate 10 may be an organic substrate or a metal substrate such as a lead frame. From the viewpoint of suppressing warpage of the semiconductor device 100, the thickness of the substrate 10 is, for example, 90 to 300 μm, and may be 90 to 210 μm.

[0065] The chip T1 is, for example, a controller chip, and is adhered to the substrate 10 by an adhesive piece T1c and electrically connected to the substrate 10 by a wire w. The shape of the chip T1 in a plan view is, for example, rectangular (square or oblong). The length of one side of the chip T1 is, for example, 5 mm or less, and may be 2 to 5 mm or 1 to 5 mm. The thickness of the chip T1 is, for example, 10 to 150 μm, and may be 20 to 100 μm.

[0066] The chip T2 is, for example, a memory chip, and is bonded onto the support piece DXc and the chip T1 via the adhesive piece Tc. In a plan view, the chip T2 is larger than the chip T1. In a plan view, the shape of the chip T2 is, for example, rectangular (square or oblong). The length of one side of the chip T2 is, for example, 20 mm or less, and may be 4 to 20 mm or 4 to 12 mm. The thickness of the chip T2 is, for example, 10 to 170 μm, and may be 20 to 120 μm. The chips T3 and T4 are also, for example, memory chips, and are bonded onto the chip T2 via the adhesive piece Tc. The length of one side of the chips T3 and T4 may be the same as that of the chip T2, and the thickness of the chips T3 and T4 may also be the same as that of the chip T2.

[0067] The support piece DXc serves as a spacer that forms a space around the chip T1. The support piece DXc includes, in this order from the substrate 10, a first adhesive piece 5c made of a cured product of the thermosetting resin composition that constitutes the first thermosetting resin layer 5, a rigid material piece 6p, and a second adhesive piece 7c (a layer formed by curing the second thermosetting resin layer 7) made of a cured product of the thermosetting resin composition that constitutes the second thermosetting resin layer 7. As shown in FIG. 4( a), two support pieces DXc (rectangular in shape) may be arranged at separate positions on both sides of the chip T1. Alternatively, as shown in FIG. 4( b), one support piece DXc (square in shape, four in total) may be arranged at each corner of the chip T1. The length of one side of the support piece DXc in plan view is, for example, 20 mm or less, and may be 1 to 20 mm or 1 to 12 mm. The thickness (height) of the support piece DXc is, for example, 10 to 180 μm, and may be 20 to 120 μm.

[0068] Next, a description will be given of a manufacturing method of the semiconductor device 100. The manufacturing method of this embodiment includes the following steps (A) to (G). The manufacturing method of this embodiment may further include the following step (H). (A) A step of preparing a laminated film 20X for forming a support piece (hereinafter, sometimes simply referred to as "laminated film 20X"), which comprises, in this order, a base film 1, an adhesive layer 2, and a support piece-forming film DX (hereinafter, sometimes simply referred to as "film DX") that is diced into a plurality of pieces, wherein the film DX has, from the adhesive layer 2 onward, a first thermosetting resin layer 5, a rigid material layer 6, and a second thermosetting resin layer 7, in this order, and the second thermosetting resin layer 7 contains an epoxy resin, a curing agent, an elastomer, and silica particles having an average primary particle size of 30 to 400 nm. (B) A step of dicing the film DX to form a plurality of support pieces DXa on the surface of the adhesive layer 2 (see FIG. 5(b)). (C) A step of picking up the support pieces DXa from the adhesive layer 2 (see FIG. 5(d)). (D) A step of arranging a chip T1 on a substrate 10. (E) A process of arranging a plurality of support pieces DXa on the substrate 10 around the chip T1 or around the area where the chip T1 is to be arranged (see Figure 6). (F) A process of preparing an adhesive piece-attached chip T2a comprising a chip T2 and an adhesive piece Ta provided on one surface of the chip T2 (see Figure 7). (G) A process of constructing a dolmen structure by arranging the adhesive piece-attached chip T2a on the surface of a plurality of support pieces DXc (see Figure 8). (H) A process of sealing gaps between the chip T1 and the chip T2 with a sealant 50 (see Figure 3).

[0069] Step (A) Step (A) is a step of preparing a laminate film 20X. The laminate film 20 described above can be used as the laminate film 20X. In this case, film D becomes film DX. When using the laminate film 20X, the cover film 3 is peeled off at an appropriate time.

[0070] Step (B) and Step (C): Step (B) is a step of dicing the film DX to form multiple support pieces DXa on the surface of the adhesive layer 2, and Step (C) is a step of picking up the support pieces DXa from the adhesive layer 2. As shown in FIG. 5(a), a dicing ring DR is attached to the laminated body obtained by peeling the cover film 3 from the laminated film 20X. That is, the dicing ring DR is attached to the adhesive layer 2 of the laminated film 20X, and the film DX is positioned inside the dicing ring DR. In this state, the film DX is diced into individual pieces (see FIG. 5(b)). Dicing may be performed, for example, by blade dicing or laser dicing. This allows for obtaining multiple support pieces DXa from the film DX. Each support piece DXa includes a first adhesive piece 5p, a rigid piece 6p, and a second adhesive piece 7p. Thereafter, if the adhesive layer 2 is an ultraviolet-curable adhesive layer, ultraviolet light is irradiated onto the adhesive layer 2 to reduce the adhesive force between the adhesive layer 2 and the support pieces DXa. As shown in FIG. 5(c), the adhesive layer 2 is expanded to separate the support pieces DXa from each other. As shown in FIG. 5(d), the support pieces DXa are pushed up by a push-up jig 42 to peel them from the adhesive layer 2, and then picked up by suction with a suction collet 44. The film DX before dicing or the support pieces DXa before picking up may be heated to allow the curing reaction of the first thermosetting resin layer 5 and the second thermosetting resin layer 7 to proceed. The support pieces DXa are appropriately cured when picked up, which tends to result in excellent pick-up properties. It is preferable that the cuts for singulation be formed up to the outer edge of the film DX.

[0071] Step (D) Step (D) is a step of placing the chip T1 on the substrate 10. For example, first, the chip T1 is placed at a predetermined position on the substrate 10 via an adhesive piece T1c. Thereafter, the chip T1 is electrically connected to the substrate 10 by a wire w. Step (D) may be a step performed before step (E) or after step (E), and may be performed before step (A), between steps (A) and (B), between steps (B) and (C), or between steps (C) and (E).

[0072] Step (E) Step (E) is a step of arranging multiple support pieces DXa on the substrate 10 around the chip T1 or around the area where the chip T1 is to be arranged (see Figure 6). Through step (E), the structure 30 shown in Figure 6 is produced. The structure 30 includes the substrate 10, the chip T1 arranged on its surface, and multiple support pieces DXa. The support pieces DXa can be arranged by a pressure bonding process. The pressure bonding process can be performed, for example, under conditions of 80 to 180°C, 0.01 to 0.50 MPa, and for 0.5 to 3.0 seconds. Note that the support pieces DXa may be completely cured to become support pieces DXc at the time of step (E), or may not be completely cured at this time. It is preferable that the support pieces DXa be completely cured to become support pieces DXc before the start of step (G).

[0073] Step (F) Step (F) is a step of preparing an adhesive piece-attached chip T2a, which includes a chip T2 and an adhesive piece Ta provided on one surface of the chip T2 (see FIG. 7). The adhesive piece-attached chip T2a includes the chip T2 and the adhesive piece Ta provided on one surface of the chip T2. The adhesive piece-attached chip T2a can be obtained, for example, by using a semiconductor wafer and a dicing / die bonding integrated film through a dicing step and a pick-up step.

[0074] Step (G) Step (G) is a step of arranging adhesive-piece-attached chips T2a so that the adhesive pieces Ta contact the upper surfaces of the multiple support pieces DXc and the upper surface of the chip T1 (see Figure 8). Specifically, the chips T2 are pressure-bonded to the upper surfaces of the support pieces DXc and the upper surface of the chip T1 via the adhesive pieces Ta. The pressure-bonding process can be performed, for example, at 80 to 180°C and 0.01 to 0.50 MPa for 0.5 to 3.0 seconds. Next, the adhesive pieces Ta are hardened by heating. The hardening process can be performed, for example, at 60 to 175°C and 0.01 to 1.0 MPa for 5 minutes or more. This hardens the adhesive pieces Ta into adhesive pieces Tc. Through this process, a dolmen structure is constructed on the substrate 10 (see Figure 8).

[0075] After step (G) and before step (H), chip T3 is placed on chip T2 via an adhesive strip, and chip T4 is then placed on chip T3 via an adhesive strip. The adhesive strip may be a thermosetting resin composition similar to the adhesive strip Ta described above, and becomes adhesive strip Tc upon heat curing (see FIG. 3). Meanwhile, chips T2, T3, and T4 are electrically connected to substrate 10 via wires w. Note that the number of chips stacked above chip T1 is not limited to three as in this embodiment and can be set as appropriate.

[0076] Step (H) Step (H) is a step of sealing the gap between the chip T1 and the chip T2 with the sealing material 50 (see FIG. 3). Through step (H), the semiconductor device 100 shown in FIG. 3 can be obtained.

[0077] Second Embodiment Figure 9 is a cross-sectional view schematically illustrating a second embodiment of a semiconductor device according to the present disclosure. While the semiconductor device 100 of the first embodiment has the chip T1 in contact with the adhesive piece Tc, the semiconductor device 200 of the present embodiment has the chip T1 spaced apart from the adhesive piece Tc (see Figure 9). For example, by appropriately setting the thickness of the support piece DXc, space can be secured for the wires w connecting the upper surface of the chip T1 to the substrate 10. Space between the chip T1 and the adhesive piece Tc prevents the wires w connected to the chip T1 from shorting out due to their upper portions contacting the chip T2. Furthermore, since there is no need to embed wires in the adhesive piece Tc that contacts the chip T2, the adhesive piece Tc can be made thinner, which is an advantage.

[0078] Although the embodiments of the present disclosure have been described in detail above, the present disclosure is not limited to the above embodiments. For example, although the above embodiments illustrate a case where the pressure-sensitive adhesive layer 2 is an ultraviolet-curable pressure-sensitive adhesive layer, the pressure-sensitive adhesive layer 2 may be a non-ultraviolet-curable pressure-sensitive adhesive layer.

[0079] Hereinafter, the present disclosure will be described with reference to examples, but the present disclosure is not limited to these examples.

[0080] [Preparation of Thermosetting Resin Varnish] <Preparation of Varnish A> Varnish A for producing the first thermosetting resin layer and the second thermosetting resin layer was prepared using the following materials. Note that the numerical values ​​of parts by mass of the following materials refer to the numerical values ​​of parts by mass of the solid content. The same applies to the numerical values ​​of parts by mass of varnishes B to G. (Epoxy resins) N-500P-10 (trade name, manufactured by DIC Corporation, o-cresol novolac epoxy resin, epoxy equivalent: 204 g / eq, softening point: 75 to 85°C): 7.1 parts by mass (Curing agents) MEH-7800M (trade name, manufactured by Meiwa Kasei Co., Ltd. (now UBE Corporation), phenylaralkyl phenol resin, hydroxyl equivalent: 174 g / eq, softening point: 80°C): 3.2 parts by mass GPH-103 (trade name, manufactured by Nippon Kayaku Co., Ltd., biphenylaralkyl phenol resin, hydroxyl equivalent: 220 to 240 g / eq, softening point: 99 to 106°C): 4.2 parts by mass (Elastomers) SG-P3 solvent-change product (SG-P3 is a trade name (manufactured by Nagase ChemteX Corporation) and is an epoxy group-containing acrylic resin (glass transition temperature: 12°C)): 75.6 parts by mass (silica particles) YA050C-HHG (trade name, manufactured by Admattex Co., Ltd., vinylsilane surface-treated silica filler): 8.3 parts by mass (coupling agent) A-189 (trade name, manufactured by Momentive Performance Materials Japan LLC, γ-mercaptopropyltrimethoxysilane): 0.4 parts by mass Y9669 (trade name, manufactured by Momentive Performance Materials Japan LLC, 3-phenylaminopropyltrimethoxysilane): 1.2 parts by mass (curing accelerator) 2PZ-CN (trade name, manufactured by Shikoku Chemicals Corporation, 1-cyanoethyl-2-phenylimidazole): 0.01 parts by mass (solvent) Cyclohexanone

[0081] <Preparation of Varnish B> Varnish B for producing the first thermosetting resin layer and the second thermosetting resin layer was prepared using the following materials: (Epoxy resin) N-500P-10: 7.1 parts by mass (Curing agent) MEH-7800M: 3.2 parts by mass GPH-103: 4.2 parts by mass (Elastomer) SG-P3 with modified solvent: 67.8 parts by mass (Silica particles) YA050C-HHG: 16.0 parts by mass (Coupling agent) A-189: 0.4 parts by mass Y9669: 1.2 parts by mass (Curing accelerator) 2PZ-CN: 0.01 parts by mass

[0082] <Preparation of Varnish C> Varnish C for producing the first thermosetting resin layer and the second thermosetting resin layer was prepared using the following materials: (Epoxy resin) N-500P-10: 7.1 parts by mass (Curing agent) MEH-7800M: 3.2 parts by mass GPH-103: 4.2 parts by mass (Elastomer) SG-P3 with modified solvent: 51.8 parts by mass (Silica particles) YA050C-HHG: 32.1 parts by mass (Coupling agent) A-189: 0.4 parts by mass Y9669: 1.2 parts by mass (Curing accelerator) 2PZ-CN: 0.01 parts by mass (Solvent) Cyclohexanone

[0083] <Preparation of Varnish D> Varnish D for forming the first thermosetting resin layer and the second thermosetting resin layer was prepared using the following materials. (Epoxy resin) N-500P-10: 11.0 parts by mass EXA-830CRP (trade name, manufactured by DIC Corporation, bisphenol F type liquid epoxy resin, epoxy equivalent: 155 to 163 g / eq): 13.0 parts by mass (curing agent) MEH-7800M: 18.7 parts by mass (elastomer) SG-P3 with a modified solvent: 48.8 parts by mass (silica particles) K180SE-EH1 (trade name, manufactured by Admatechs Co., Ltd.): 8.3 parts by mass (coupling agent) A-189: 0.1 part by mass A-1160 (trade name, manufactured by Momentive Performance Materials Japan, LLC, γ-ureidopropyltriethoxysilane): 0.2 part by mass (curing accelerator) 2PZ-CN: 0.06 part by mass (solvent)・Cyclohexanone

[0084] <Preparation of Varnish E> Varnish E for producing the first thermosetting resin layer and the second thermosetting resin layer was prepared using the following materials: (Epoxy resin) N-500P-10: 11.0 parts by mass EXA-830CRP: 13.0 parts by mass (Curing agent) MEH-7800M: 18.7 parts by mass (Elastomer) SG-P3 with modified solvent: 48.8 parts by mass (Silica particles) 3SE-EH1 (trade name, manufactured by Admatechs Co., Ltd.): 8.3 parts by mass (Coupling agent) A-189: 0.1 parts by mass A-1160: 0.2 parts by mass (Curing accelerator) 2PZ-CN: 0.06 parts by mass (Solvent) Cyclohexanone

[0085] <Preparation of Varnish F> Varnish F for producing the first thermosetting resin layer and the second thermosetting resin layer was prepared using the following materials: (Epoxy resin) N-500P-10: 9.7 parts by mass (Curing agent) MEH-7800M: 10.6 parts by mass (Elastomer) SG-P3 with modified solvent: 69.8 parts by mass (Silica particles) R972 (trade name, manufactured by Admattex Co., Ltd., dimethyldichlorosilane surface-treated silica filler): 8.3 parts by mass (Coupling agent) A-189: 0.4 parts by mass A-1160: 1.3 parts by mass (Curing accelerator) 2PZ-CN: 0.02 parts by mass (Solvent) Cyclohexanone

[0086] <Preparation of Varnish G> Varnish G for producing the first thermosetting resin layer and the second thermosetting resin layer was prepared using the following materials: (Epoxy resin) N-500P-10: 11.0 parts by mass EXA-830CRP: 13.0 parts by mass (Curing agent) MEH-7800M: 18.7 parts by mass (Elastomer) SG-P3 with modified solvent: 48.8 parts by mass (Silica particles) SC2050-HLG (trade name, manufactured by Admatechs Co., Ltd.): 8.3 parts by mass (Coupling agent) A-189: 0.1 parts by mass A-1160: 0.2 parts by mass (Curing accelerator) 2PZ-CN: 0.06 parts by mass (Solvent) Cyclohexanone

[0087] Example 1 [Preparation of laminated film for forming individualized body (laminated film for forming support piece)] (Preparation of film for forming individualized body (film for forming support piece)) As described above, cyclohexanone was used as the solvent, and the solid content of varnish A was adjusted to 15% by mass. Varnish A was filtered through a 100-mesh filter and vacuum degassed. A polyethylene terephthalate (PET) film (thickness 38 μm) that had been subjected to a release treatment was prepared as a film (cover film) to which varnish A was applied. The varnish A after vacuum degassing was applied to the release-treated surface of the PET film. The applied varnish A was heated and dried in two stages, at 90°C for 5 minutes and then at 140°C for 5 minutes. In this way, a B-stage (semi-cured) thermosetting resin layer (first thermosetting resin layer and second thermosetting resin layer) was formed on the surface of the cover film, and a first laminate including the cover film and the thermosetting resin layer was obtained. Next, the thermosetting resin layer of the first laminate was attached to one surface of a polyimide film (thickness: 25 μm, tensile modulus: 46.4 MPa) as a rigid material layer on a hot plate at 60 ° C. to obtain a second laminate including a cover film, a thermosetting resin layer (second thermosetting resin layer), and a polyimide film. Next, the thermosetting resin layer of the first laminate was attached to the surface of the polyimide film opposite the thermosetting resin layer (second thermosetting resin layer) on a hot plate at 60 ° C. to produce a film for forming individualized bodies having a three-layer structure (first thermosetting resin layer, polyimide film, and second thermosetting resin layer).

[0088] A laminated film (dicing film) having an ultraviolet-curable pressure-sensitive adhesive layer was prepared as follows. First, a copolymer was obtained by solution radical polymerization using 83 parts by weight of 2-ethylhexyl acrylate, 15 parts by weight of 2-hydroxyethyl acrylate, and 2 parts by weight of methacrylic acid as raw materials and ethyl acetate as the solvent. This acrylic copolymer was reacted with 12 parts by weight of 2-methacryloyloxyethyl isocyanate to synthesize an ultraviolet-irradiation-type acrylic copolymer having a carbon-carbon double bond. In the above reaction, 0.05 parts of hydroquinone monomethyl ether was used as a polymerization inhibitor. The weight-average molecular weight of the synthesized acrylic copolymer was measured by GPC and found to be between 300,000 and 700,000. The resulting acrylic copolymer was mixed with 2.0 parts (solids equivalent) of a polyisocyanate compound (manufactured by Nippon Polyurethane Co., Ltd., product name: Coronate L) as a curing agent and 0.5 parts of 1-hydroxycyclohexyl phenyl ketone as a photopolymerization initiator to prepare an ultraviolet-irradiation-type pressure-sensitive adhesive solution. This UV-irradiated adhesive solution was applied to a polyethylene terephthalate release film (38 μm thick) to a dry thickness of 10 μm, and then dried. A polyolefin film (90 μm thick) with one side subjected to corona discharge treatment was then bonded to the adhesive layer. The resulting laminated film was aged in a thermostatic chamber at 40°C for 72 hours to produce a dicing film.

[0089] A three-layer singulated body-forming film was attached to the adhesive layer of the dicing film using a rubber roll on a hot plate at 60°C, with the side of the singulated body-forming film having the first thermosetting resin layer facing the adhesive layer. This resulted in the production of the singulated body-forming laminate film of Example 1, which was a laminate of the singulated body-forming film and the dicing film. The thicknesses of the first thermosetting resin layer and the second thermosetting resin layer were each 25 µm.

[0090] [Measurement of the average primary particle size of silica particles] The average primary particle size of silica particles was measured using the first laminate obtained above. The thermosetting resin layer of the first laminate was cut, and the cut surface (film cross section) was observed using a scanning electron microscope, and an image of the cut surface (film cross section) was taken. From the taken image, the major axis of 50 primary particles of silica particles was measured and the average value was calculated. The average primary particle size of the silica particles contained in the thermosetting resin layer was 50 nm. The results are summarized in Table 1.

[0091] [Measurement of Peel Strength of Thermosetting Resin Layer from Polyimide Film] Using the second laminate obtained above, the 90° peel strength of the thermosetting resin layer (second thermosetting resin layer) from the polyimide film was measured. The 90° peel strength was measured using the following method. First, a measurement sample measuring 25 mm wide and 100 mm long was cut from the second laminate. Next, the 90° peel strength was measured by peeling the thermosetting resin layer (second thermosetting resin layer) from the polyimide film side fixed to a metal support plate at a measurement temperature of 25°C, a peel angle of 90°, and a peel speed of 50 mm / min. The 90° peel strength was found to be sufficiently strong, and no peeling was observed under the above measurement conditions. The results are summarized in Table 1.

[0092] Example 2 A laminated film for forming an individualized body of Example 2 was obtained in the same manner as in Example 1, except that varnish A was changed to varnish B. The average primary particle size of the silica particles contained in the thermosetting resin layer was measured in the same manner as in Example 1, and was found to be 50 nm. The peel strength of the thermosetting resin layer (second thermosetting resin layer) to the polyimide film was measured in the same manner as in Example 1. The 90° peel strength was sufficiently strong, and no peeling was observed under the above measurement conditions. The results are summarized in Table 1.

[0093] Example 3 A laminated film for forming an individualized body of Example 3 was obtained in the same manner as in Example 1, except that varnish A was changed to varnish C. The average primary particle size of the silica particles contained in the thermosetting resin layer was measured in the same manner as in Example 1, and was found to be 50 nm. The peel strength of the thermosetting resin layer (second thermosetting resin layer) to the polyimide film was measured in the same manner as in Example 1. The 90° peel strength was sufficiently strong, and no peeling was observed under the above measurement conditions. The results are summarized in Table 1.

[0094] Comparative Example 1 A laminated film for forming an individualized body of Comparative Example 1 was obtained in the same manner as in Example 1, except that varnish A was changed to varnish F. The average primary particle size of the silica particles contained in the thermosetting resin layer was measured in the same manner as in Example 1, and the average primary particle size of the silica particles was 16 nm. The peel strength of the thermosetting resin layer (second thermosetting resin layer) to the polyimide film was measured in the same manner as in Example 1, and the 90° peel strength was 1.5 N / 25 mm. The results are summarized in Table 1.

[0095]

[0096] Example 4 A laminated film for forming an individualized body of Example 4 was obtained in the same manner as in Example 1, except that varnish A was changed to varnish D. The average primary particle size of the silica particles contained in the thermosetting resin layer was measured in the same manner as in Example 1, and was found to be 180 nm. The peel strength of the thermosetting resin layer (second thermosetting resin layer) to the polyimide film was measured in the same manner as in Example 1. The 90° peel strength was sufficiently strong, and no peeling was observed under the above measurement conditions. The results are summarized in Table 2.

[0097] Example 5 A laminated film for forming an individualized body of Example 5 was obtained in the same manner as in Example 1, except that varnish A was changed to varnish E. The average primary particle size of the silica particles contained in the thermosetting resin layer was measured in the same manner as in Example 1, and was found to be 300 nm. The peel strength of the thermosetting resin layer (second thermosetting resin layer) from the polyimide film was measured in the same manner as in Example 1, and the 90° peel strength was found to be sufficiently strong, and no peeling was observed under the above measurement conditions. The results are summarized in Table 2.

[0098] Comparative Example 2 A laminated film for forming an individualized body of Comparative Example 2 was obtained in the same manner as in Example 1, except that varnish A was changed to varnish G. The average primary particle size of the silica particles contained in the thermosetting resin layer was measured in the same manner as in Example 1, and the average primary particle size of the silica particles was 500 nm. The peel strength of the thermosetting resin layer (second thermosetting resin layer) to the polyimide film was measured in the same manner as in Example 1, and the 90° peel strength was 6.3 N / 25 mm. The results are summarized in Table 2.

[0099]

[0100] As shown in Tables 1 and 2, it was found that a thermosetting resin layer containing silica particles with an average primary particle size of 30 to 400 nm had a higher 90° peel strength of the thermosetting resin layer (second thermosetting resin layer) against the polyimide film than a thermosetting resin layer containing silica particles whose average primary particle size was outside the specified range. These results suggest that the laminate film for forming an individualized body comprising the film for forming an individualized body of the present disclosure has a sufficiently strong peel strength between the thermosetting resin layer and the rigid material layer, and that it is possible to suppress interfacial peeling between the layers of the film when the film for forming an individualized body is diced into individual pieces.

[0101] 1...base material film, 2...adhesive layer, 3...cover film, 5...first thermosetting resin layer, 5p...first adhesive piece, 5c...first adhesive piece (cured product), 6...rigid material layer, 6p...rigid material piece, 7...second thermosetting resin layer, 7p...second adhesive piece, 7c...second adhesive piece (cured product), 10...substrate, 20...laminated film for forming individualized body (laminated film), 20X...laminated film for forming support piece (laminated film), 50...sealing material, 100, 200...semiconductor device, D...film for forming individualized body (film), DX...film for forming support piece (film), DXa...support piece, DXc...support piece (cured product), R...region, T1, T2, T3, T4...chip, T2a...chip with adhesive piece, Ta...adhesive piece, Tc...adhesive piece (cured product).

Claims

1. A laminated film for forming an individualized body, comprising, in this order: a base film; an adhesive layer; and a film for forming an individualized body, wherein the film for forming an individualized body has, in this order from the adhesive layer, a first thermosetting resin layer, a rigid material layer, and a second thermosetting resin layer, and the second thermosetting resin layer contains an epoxy resin, a curing agent, an elastomer, and silica particles having an average primary particle size of 30 to 400 nm.

2. The laminated film for forming individual pieces according to claim 1, wherein the rigid material layer is a polyimide layer.

3. The laminated film for forming singulated bodies according to claim 1 or 2, wherein the first thermosetting resin layer contains an epoxy resin, a curing agent, an elastomer, and silica particles having an average primary particle size of 30 to 400 nm.

4. A method for manufacturing a semiconductor device having a dolmen structure including a substrate, a first chip arranged on the substrate, a plurality of support pieces arranged on the substrate around the first chip, and a second chip supported by the plurality of support pieces and arranged to cover the first chip, the method comprising: (A) preparing a support piece-forming laminated film comprising, in this order, a base film, an adhesive layer, and a support piece-forming film, the support piece-forming film having, from the adhesive layer onward, a first thermosetting resin layer, a rigid material layer, and a second thermosetting resin layer, in this order, the second thermosetting resin layer containing an epoxy resin, a curing agent, an elastomer, and silica particles having an average primary particle size of 30 to 400 nm; (B) dicing the support piece-forming film to form a plurality of support pieces on the surface of the adhesive layer; (C) picking up the support pieces from the adhesive layer; (D) arranging the first chip on the substrate; (E) arranging a plurality of the support pieces on the substrate around the first chip or around an area where the first chip is to be arranged; (F) preparing a chip with an adhesive piece comprising a second chip and an adhesive piece provided on one surface of the second chip; and (G) constructing a dolmen structure by arranging the chip with adhesive piece on the surfaces of a plurality of the support pieces.

5. The method for manufacturing a semiconductor device according to claim 4, further comprising, prior to step (G), a step of heating the support piece forming film or the support piece.

6. The method for manufacturing a semiconductor device according to claim 4 or 5, wherein the rigid material layer is a polyimide layer.

7. The method for manufacturing a semiconductor device according to claim 4 or 5, wherein the first thermosetting resin layer contains an epoxy resin, a curing agent, an elastomer, and silica particles having an average primary particle size of 30 to 400 nm.

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