Substrate processing system

Abstract

Provided is a technology capable of appropriately detecting the consumption amounts and positions of components in a substrate processing system. This substrate processing system comprises: a vacuum conveyance module; a conveyance robot including an end effector and a distance sensor which is attached to the end effector and has an opening; a plasma processing module which is connected to the vacuum conveyance module and includes a plasma processing chamber, a substrate support part disposed inside the plasma processing chamber, and an edge ring disposed so as to surround a substrate on the substrate support part; and a control unit. The control unit is configured such that: a measurement auxiliary unit, including a condensing lens, is placed on the end effector and the condensing lens is disposed below the opening of the distance sensor; the measurement auxiliary unit on the end effector is conveyed into the plasma processing chamber by means of the conveyance robot; and the distance to the edge ring is measured via the condensing lens by means of the distance sensor.

Description

Substrate Processing System

[0001] SUMMARY OF THE INVENTION An exemplary embodiment of the present disclosure relates to a substrate processing system.

[0002] A technique for estimating the height of an edge ring placed on a mounting table using a distance sensor is disclosed in Japanese Patent Laid-Open No. 2003-222299.

[0003] Japanese Patent Application Laid-Open No. 2022-174626

[0004] The present disclosure provides a technique that can appropriately detect the amount of wear and the position of a component in a substrate processing system.

[0005] In one exemplary embodiment of the present disclosure, a substrate processing system includes: a vacuum transfer module; a transfer robot including an end effector and a distance sensor attached to the end effector and having an opening; a plasma processing module connected to the vacuum transfer module, the plasma processing module including a plasma processing chamber, a substrate support disposed in the plasma processing chamber, and an edge ring disposed to surround the substrate on the substrate support; and a controller, wherein the controller is configured to place a measurement auxiliary unit including a focusing lens on the end effector and position the focusing lens below the opening of the distance sensor, use the transfer robot to transfer the measurement auxiliary unit on the end effector into the plasma processing chamber, and measure the distance to the edge ring via the focusing lens using the distance sensor.

[0006] According to one exemplary embodiment of the present disclosure, it is possible to provide a technique that can appropriately detect the amount of wear and the position of a component in a substrate processing system.

[0007] 12A and 12B are diagrams for explaining an example of the configuration of a substrate processing system; FIG. 12B are diagrams for explaining an example of the configuration of a storage container; FIG. 12C are diagrams for explaining an example of the configuration of a plasma processing system; FIG. 12D are diagrams for explaining an example of the configuration of a plasma processing apparatus; FIG. 12E are diagrams for explaining an example of the configuration of an end effector of a transport robot; FIG. 12F are diagrams for explaining an example of measuring the wear amount and position of a component using a distance sensor provided in the end effector of the transport robot; FIG. 12C are diagrams for explaining an example of the configuration of a measurement auxiliary unit; FIG. 12F are diagrams for explaining an example of the measurement auxiliary unit mounted on the end effector; FIG. 12G are diagrams for explaining an example of the measurement auxiliary unit mounted on the end effector; FIG. 12H are diagrams for explaining an example of the flow chart of a method for measuring the wear and position of a component; FIG. 12G are diagrams for explaining an example of measuring the wear and position of a component using a distance sensor and a measurement auxiliary unit provided in the end effector of the transport robot; FIG. 12H are diagrams for explaining the results of an experiment for evaluating the angle tolerance of a distance sensor in the X-axis direction; FIG. 12H are diagrams for explaining the results of an experiment for evaluating the angle tolerance of a distance sensor in the Y-axis direction; FIG. 12H are diagrams for explaining the results of estimating the allowable angle using a pseudo curve based on the experimental result of FIG. 12.

[0008] Hereinafter, each embodiment of the present disclosure will be described.

[0009] In one exemplary embodiment, a substrate processing system is provided, comprising: a vacuum transfer module; a transfer robot including an end effector and a distance sensor attached to the end effector and having an opening; a plasma processing module connected to the vacuum transfer module, the plasma processing module including a plasma processing chamber, a substrate support disposed in the plasma processing chamber, and an edge ring disposed to surround the substrate on the substrate support; and a controller, wherein the controller is configured to place a measurement auxiliary unit including a focusing lens on the end effector and position the focusing lens below the opening of the distance sensor, transport the measurement auxiliary unit on the end effector using the transfer robot into the plasma processing chamber, and measure the distance to the edge ring via the focusing lens using the distance sensor.

[0010] In one exemplary embodiment, the measurement auxiliary unit includes a base portion and a support member connected to the base portion and supporting the condenser lens.

[0011] In one exemplary embodiment, a substrate processing system is provided, comprising: a vacuum transfer module; a transfer robot, the transfer robot including an end effector, a distance sensor attached to the end effector and having an opening, and a focusing lens positioned below the opening of the distance sensor; a plasma processing module connected to the vacuum transfer module, the plasma processing module including a plasma processing chamber, a substrate support positioned in the plasma processing chamber, and an edge ring positioned to surround a substrate on the substrate support; and a controller, wherein the controller is configured to move the end effector of the transfer robot into the plasma processing chamber and measure the distance to the edge ring via the focusing lens using the distance sensor.

[0012] In one exemplary embodiment, the end effector includes a support member that supports a collecting lens.

[0013] Hereinafter, each embodiment of the present disclosure will be described in detail with reference to the drawings. In each drawing, the same or similar elements are designated by the same reference numerals, and redundant explanations will be omitted. Unless otherwise specified, the positional relationships, such as up, down, left, and right, will be described based on the positional relationships shown in the drawings. The dimensional ratios in the drawings do not represent actual ratios, and the actual ratios are not limited to the ratios shown in the drawings.

[0014] <Configuration Example of Substrate Processing System> A substrate processing system (hereinafter also referred to as "substrate processing system PS") according to one embodiment will be described with reference to Fig. 1. Fig. 1 is a diagram for explaining a configuration example of the substrate processing system PS.

[0015] The substrate processing system PS includes a vacuum transfer module TM, process modules PM1 to PM6, load lock modules LL1 and LL2, an atmospheric transfer module LM, load ports LP1 to LP4, an aligner AN, a storage SR, and the like.

[0016] The vacuum transfer module TM has a substantially polygonal shape in a plan view. Process modules PM1 to PM6 are connected to multiple side surfaces of the vacuum transfer module TM. Load lock modules LL1 and LL2 are connected to some side surfaces of the vacuum transfer module TM. The vacuum transfer module TM has a vacuum chamber with a vacuum atmosphere, and a vacuum transfer robot TR1 is disposed inside.

[0017] The vacuum transfer robot TR1 is configured to be able to rotate, extend, and move up and down freely. The vacuum transfer robot TR1 can transfer objects based on operational instructions output by a control unit CU (described later). For example, the vacuum transfer robot TR1 can place and hold an object on an end effector EE1 located at the tip of the robot, and transfer the object between the load lock modules LL1 and LL2 and the process modules PM1 to PM6. The end effector is also referred to as a pick, fork, or transfer arm. The end effector EE1 of the vacuum transfer robot TR1 may have a U-shaped, bifurcated shape and be configured to transport the object placed thereon.

[0018] The transport objects include substrates, consumable parts, and measurement auxiliary units. The substrates may be, for example, semiconductor wafers, dummy wafers, sensor wafers, etc. The consumable parts are parts that are replaceably installed in the process modules PM1 to PM6 and are consumed by various processes such as plasma processing performed in the process modules PM1 to PM6. The consumable parts may include, for example, parts that constitute the ring assembly 112 and shower head 13, which will be described later. The measurement auxiliary unit may be a jig that measures the position and consumption of parts in the process modules PM1 to PM6. The parts to be measured may be consumable parts. The configuration of the measurement auxiliary unit will be described in detail later.

[0019] Each of the process modules PM1 to PM6 has a processing chamber and a substrate support disposed therein. At least one of the process modules PM1 to PM6 may be a plasma processing module. At least one of the process modules PM1 to PM6 may be a plasma processing system. The configuration of the plasma processing system will be described in detail below. In one embodiment, at least one of the process modules PM1 to PM6 may be capable of, after a substrate is placed on the substrate support, reducing the pressure inside, introducing a processing gas, and supplying RF power to generate plasma, and then plasma processing the substrate using the plasma. The vacuum transfer module TM and the process modules PM1 to PM6 are separated by a gate valve G1 that can be opened and closed.

[0020] The load lock modules LL1 and LL2 are disposed between the vacuum transfer module TM and the atmospheric transfer module LM. The load lock modules LL1 and LL2 have internal pressure variable chambers whose interiors can be switched between vacuum and atmospheric pressure. The load lock modules LL1 and LL2 have stages (mounting tables) disposed therein. When transferring an object from the atmospheric transfer module LM to the vacuum transfer module TM, the load lock modules LL1 and LL2 can set the interior to atmospheric pressure, receive the object from the atmospheric transfer robot TR3 of the atmospheric transfer module LM, and then evacuate the interior to transfer the object to the vacuum transfer robot TR1 of the vacuum transfer module TM. When transferring an object from the vacuum transfer module TM to the atmospheric transfer module LM, the load lock modules LL1 and LL2 can evacuate the interior to receive the object from the vacuum transfer robot TR1 of the vacuum transfer module TM, and then pressurize the interior to atmospheric pressure to transfer the object to the atmospheric transfer robot TR3 of the atmospheric transfer module LM.

[0021] The load lock modules LL1 and LL2 may have lifter pins that move up and down on the stage. The load lock modules LL1 and LL2 may be capable of transferring a transfer target between the atmospheric transfer robot TR3 and the load lock modules LL1 and LL2, and between the vacuum transfer robot TR1 and the load lock modules LL1 and LL2, while lifting and supporting the transfer target with the lifter pins. The load lock modules LL1 and LL2 are separated from the vacuum transfer module TM by a gate valve G2 that can be opened and closed. The load lock modules LL1 and LL2 are separated from the atmospheric transfer module LM by a gate valve G3 that can be opened and closed.

[0022] The atmospheric transfer module LM is disposed opposite the vacuum transfer module TM, with the load lock modules LL1 and LL2 sandwiched between them. The atmospheric transfer module LM may be, for example, an Equipment Front End Module (EFEM). The atmospheric transfer module LM is rectangular, equipped with an FFU (Fan Filter Unit), and has an atmospheric transfer chamber maintained at atmospheric pressure. Two load lock modules LL1 and LL2 and a storage SR are connected to one longitudinal side of the atmospheric transfer module LM. Load ports LP1 to LP4 are connected to the other longitudinal side of the atmospheric transfer module LM. An aligner AN is connected to one longitudinal side of the atmospheric transfer module LM. Note that the connection positions of the storage SR and aligner AN relative to the atmospheric transfer module LM are not limited to this and can be selected arbitrarily. An atmospheric transfer robot TR3 is disposed within the atmospheric transfer module LM, which transfers objects, including substrates.

[0023] The atmospheric transfer robot TR3 is configured to be movable along the longitudinal direction of the atmospheric transfer module LM and is also configured to be freely swiveling, extending, and elevating. The atmospheric transfer robot TR3 can transfer objects based on operational instructions output by a control unit CU (described later). For example, the atmospheric transfer robot TR3 can place and hold objects on an end effector EE3 located at its tip and transfer the objects between the load ports LP1 to LP4, the load lock modules LL1 and LL2, the aligner AN, and the storage SR. The end effector EE3 of the atmospheric transfer robot TR3 may have the same shape as the end effector EE1 of the vacuum transfer robot TR1.

[0024] The load ports LP1 to LP4 are configured to accommodate multiple containers C. The containers C may accommodate multiple substrates (e.g., 25 substrates). The containers C may be, for example, front-opening unified pods (FOUPs).

[0025] The aligner AN may be a device that detects the position (orientation and center) of the transfer object. The aligner AN may include a rotating support base, an optical sensor (neither of which are shown), etc. The control unit CU may correct the orientation of the transfer object based on the detection result by the aligner AN. Based on the detection result by the aligner AN, the control unit CU may correct the position of the end effector EE3 of the atmospheric transfer robot TR3 when receiving the transfer object from the aligner AN so that the center of the transfer object is located at a predetermined position of the end effector EE3 of the atmospheric transfer robot TR3.

[0026] The storage SR may be a storage device that stores transport objects including the measurement auxiliary unit.

[0027] 2 , the storage SR may have a housing VS1 and multiple tiers of support parts SP1 arranged within the housing VS1. The support parts SP1 may be configured to be able to support multiple tiers of measurement assistance units 400 (described below). The support parts SP1 are configured to be accessible by the end effector EE3 of the atmospheric transfer robot TR3, and the end effector EE3 of the atmospheric transfer robot TR3 can hold the measurement assistance unit 400 on the support parts SP1 of the storage SR and remove it from the storage SR, and can also store the held measurement assistance unit 400 on the support parts SP1 of the storage SR.

[0028] The substrate processing system PS shown in FIG. 1 is connected to a control unit CU via a communication interface. In one embodiment, part or all of the control unit CU may be included in the substrate processing system PS. The control unit CU may be, for example, a computer. The control unit CU includes a central processing unit (CPU), random access memory (RAM), read-only memory (ROM), an auxiliary storage device, etc. The CPU operates based on a program stored in the ROM or the auxiliary storage device, and can control each part of the substrate processing system PS. The control unit CT may also perform part or all of the functions of a control unit 2, which will be described later.

[0029] <Configuration Example of Plasma Processing System> At least one of the process modules PM1 to PM6 may be a plasma processing system.

[0030] FIG. 3 is a diagram illustrating an example configuration of a plasma processing system. In one embodiment, the plasma processing system includes a plasma processing apparatus 1 and a control unit 2. The plasma processing apparatus 1 is an example of a substrate processing apparatus. The plasma processing apparatus 1 includes a plasma processing chamber 10, a substrate support unit 11, and a plasma generation unit 12. The plasma processing chamber 10 has a plasma processing space. The plasma processing chamber 10 also has at least one gas supply port for supplying at least one processing gas to the plasma processing space and at least one gas exhaust port for exhausting gas from the plasma processing space. The gas supply port is connected to a gas supply unit 20 (described later), and the gas exhaust port is connected to an exhaust system 40 (described later). The substrate support unit 11 is disposed in the plasma processing space and has a substrate support surface for supporting a substrate.

[0031] The plasma generating unit 12 is configured to generate plasma from at least one processing gas supplied into the plasma processing space. The plasma generated in the plasma processing space may be capacitively coupled plasma (CCP), inductively coupled plasma (ICP), electron-cyclotron-resonance plasma (ECR plasma), helicon wave plasma (HWP), surface wave plasma (SWP), or the like. Various types of plasma generators may be used, including alternating current (AC) plasma generators and direct current (DC) plasma generators. In one embodiment, the AC signal (AC power) used in the AC plasma generator has a frequency in the range of 100 kHz to 10 GHz. Thus, AC signals include radio frequency (RF) signals and microwave signals. In one embodiment, the RF signal has a frequency in the range of 100 kHz to 150 MHz.

[0032] The control unit 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to perform various processes described in this disclosure. The control unit 2 may be configured to control each element of the plasma processing apparatus 1 to perform various processes described herein. In one embodiment, part or all of the control unit 2 may be included in the plasma processing apparatus 1. The control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The control unit 2 may be implemented by, for example, a computer 2a. The processing unit 2a1 may be configured to read a program from the storage unit 2a2 and execute the read program to perform various control operations. This program may be stored in the storage unit 2a2 in advance or may be acquired via a medium when needed. The acquired program is stored in the storage unit 2a2 and read from the storage unit 2a2 by the processing unit 2a1 for execution. The medium may be various storage media readable by the computer 2a or a communication line connected to the communication interface 2a3. The processing unit 2a1 may be a CPU (Central Processing Unit). The storage unit 2a2 may include a random access memory (RAM), a read-only memory (ROM), a hard disk drive (HDD), a solid state drive (SSD), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing apparatus 1 via a communication line such as a local area network (LAN).

[0033] The following describes a configuration example of a capacitively coupled plasma processing apparatus as an example of the plasma processing apparatus 1. Fig. 4 is a diagram for explaining a configuration example of a capacitively coupled plasma processing apparatus.

[0034] The capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10 (also simply referred to as the "chamber"), a gas supply unit 20, a power supply 30, and an exhaust system 40. The plasma processing apparatus 1 also includes a substrate support 11 and a gas inlet. The gas inlet is configured to introduce at least one process gas into the plasma processing chamber 10. The gas inlet includes a showerhead 13. The substrate support 11 is disposed within the plasma processing chamber 10. The showerhead 13 is disposed above the substrate support 11. In one embodiment, the showerhead 13 forms at least a portion of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the showerhead 13, a sidewall 10a of the plasma processing chamber 10, and the substrate support 11. The plasma processing chamber 10 is grounded. The showerhead 13 and the substrate support 11 are electrically insulated from the housing of the plasma processing chamber 10.

[0035] The substrate support 11 includes a main body 111 and a ring assembly 112. The main body 111 has a central region 111a for supporting a substrate W and an annular region 111b for supporting the ring assembly 112. A wafer is an example of a substrate W. The annular region 111b of the main body 111 surrounds the central region 111a of the main body 111 in a plan view. The substrate W is disposed on the central region 111a of the main body 111, and the ring assembly 112 is disposed on the annular region 111b of the main body 111 so as to surround the substrate W on the central region 111a of the main body 111. Therefore, the central region 111a is also called a substrate support surface for supporting the substrate W, and the annular region 111b is also called a ring support surface for supporting the ring assembly 112.

[0036] In one embodiment, the main body 111 includes a base 1110 and an electrostatic chuck 1111. The base 1110 includes a conductive member. The conductive member of the base 1110 can function as a lower electrode. The electrostatic chuck 1111 is disposed on the base 1110. The electrostatic chuck 1111 includes a ceramic member 1111a and an electrostatic electrode 1111b disposed within the ceramic member 1111a. The ceramic member 1111a has a central region 111a. In one embodiment, the ceramic member 1111a also has an annular region 111b. Note that the annular region 111b may also be provided by another member surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck or an annular insulating member. In this case, the ring assembly 112 may be disposed on the annular electrostatic chuck or the annular insulating member, or may be disposed on both the electrostatic chuck 1111 and the annular insulating member. Furthermore, at least one RF / DC electrode coupled to an RF power supply 31 and / or a DC power supply 32, which will be described later, may be disposed within the ceramic member 1111a. In this case, the at least one RF / DC electrode functions as a lower electrode. When a bias RF signal and / or a DC signal, which will be described later, is supplied to the at least one RF / DC electrode, the RF / DC electrode is also called a bias electrode. Note that the conductive member of the base 1110 and the at least one RF / DC electrode may function as multiple lower electrodes. Furthermore, the electrostatic electrode 1111b may function as a lower electrode. Therefore, the substrate support 11 includes at least one lower electrode.

[0037] The ring assembly 112 includes one or more annular members. In one embodiment, the one or more annular members include one or more edge rings and at least one cover ring. The edge rings are formed of a conductive or insulating material, and the cover rings are formed of an insulating material.

[0038] The substrate support 11 may also include a temperature adjustment module configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112, and the substrate to a target temperature. The temperature adjustment module may include a heater, a heat transfer medium, a flow passage 1110a, or a combination thereof. A heat transfer fluid such as brine or a gas flows through the flow passage 1110a. In one embodiment, the flow passage 1110a is formed in the base 1110, and one or more heaters are disposed in the ceramic member 1111a of the electrostatic chuck 1111. The substrate support 11 may also include a heat transfer gas supply configured to supply a heat transfer gas to a gap between the backside of the substrate W and the central region 111a.

[0039] The showerhead 13 is configured to introduce at least one process gas from the gas supply unit 20 into the plasma processing space 10s. The showerhead 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and multiple gas inlets 13c. The process gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s from the multiple gas inlets 13c. The showerhead 13 also includes at least one upper electrode. In addition to the showerhead 13, the gas inlet may also include one or more side gas injectors (SGIs) attached to one or more openings formed in the sidewall 10a.

[0040] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one process gas from a corresponding gas source 21 to the showerhead 13 via a corresponding flow controller 22. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Additionally, the gas supply unit 20 may include at least one flow modulation device that modulates or pulses the flow rate of the at least one process gas.

[0041] The power supply 30 includes an RF power supply 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 is configured to supply at least one RF signal (RF power) to at least one lower electrode and / or at least one upper electrode. This generates a plasma from at least one processing gas supplied to the plasma processing space 10s. Therefore, the RF power supply 31 can function as at least a part of the plasma generation unit 12. Furthermore, by supplying a bias RF signal to the at least one lower electrode, a bias potential is generated on the substrate W, thereby attracting ion components in the formed plasma to the substrate W.

[0042] In one embodiment, the RF power supply 31 includes a first RF generating unit 31a and a second RF generating unit 31b. The first RF generating unit 31a is coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matching circuit and is configured to generate a source RF signal (source RF power) for plasma generation. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generating unit 31a may be configured to generate multiple source RF signals having different frequencies. The generated one or more source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0043] The second RF generator 31b is coupled to at least one lower electrode via at least one impedance matching circuit and is configured to generate a bias RF signal (bias RF power). The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 100 MHz. In one embodiment, the second RF generator 31b may be configured to generate multiple bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to at least one lower electrode. In various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0044] The power supply 30 may also include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generator 32a and a second DC generator 32b. In one embodiment, the first DC generator 32a is connected to the at least one lower electrode and configured to generate a first DC signal. The generated first DC signal is applied to the at least one lower electrode. In one embodiment, the second DC generator 32b is connected to the at least one upper electrode and configured to generate a second DC signal. The generated second DC signal is applied to the at least one upper electrode.

[0045] In various embodiments, the first and second DC signals may be pulsed. In this case, a sequence of voltage pulses is applied to at least one lower electrode and / or at least one upper electrode. The voltage pulses may have a rectangular, trapezoidal, triangular, or combination thereof pulse waveform. In one embodiment, a waveform generator for generating the sequence of voltage pulses from the DC signal is connected between the first DC generator 32a and at least one lower electrode. Thus, the first DC generator 32a and the waveform generator constitute a voltage pulse generator. When the second DC generator 32b and the waveform generator constitute a voltage pulse generator, the voltage pulse generator is connected to at least one upper electrode. The voltage pulses may have either positive or negative polarity. Furthermore, the sequence of voltage pulses may include one or more positive voltage pulses and one or more negative voltage pulses within one period. The first and second DC generating units 32a and 32b may be provided in addition to the RF power supply 31, or the first DC generating unit 32a may be provided instead of the second RF generating unit 31b.

[0046] The exhaust system 40 may be connected to, for example, a gas exhaust port 10e provided at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure in the plasma processing space 10s is regulated by the pressure regulating valve. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0047] <Configuration Example of End Effector EE1 of Vacuum Transfer Robot TR1> In one embodiment, as shown in FIG. 5 , the end effector EE1 of the vacuum transfer robot TR1 has a flat, U-shaped, bifurcated shape. The end effector EE1 has a base 200 and a pair of tip portions 201 that split into two from the base 200 toward the tip. Each tip portion 201 has multiple pads PD on its surface. The multiple pads PD can contact the underside of a transfer target (e.g., a substrate) and hold the transfer target. In one embodiment, each tip portion 201 may have one or multiple suction holes on its surface. The suction holes may be connected to an exhaust device such as a vacuum pump, and the transfer target may be vacuum-sucked to the end effector EE1 through the suction holes.

[0048] 5 and 6, the vacuum transfer robot TR1 has a distance sensor 250 attached to the end effector EE1. In one embodiment, the distance sensor 250 has an opening 350, which represents a light emitting / receiving unit that emits light to the outside from the end effector EE1 and receives light therefrom. The distance sensor 250 is disposed on each tip portion 201, and the opening 350 may be disposed on the back surface of each tip portion 201. The distance sensor 250 may be disposed near the outer tip of each tip portion 201.

[0049] 6 , the distance sensor 250 is configured to detect the distance between the end effector EE1 and a component (e.g., the edge ring 112a of the ring assembly 112) located below the end effector EE1. The distance sensor 250 may be an optical displacement sensor. The optical displacement sensor may be a coaxial confocal sensor, a spectroscopic interference sensor, or the like. In one embodiment, the distance sensor 250 can obtain information (signals) regarding the distance to the component by irradiating light from a light-emitting unit toward the component below and detecting the light reflected from the component with a light-receiving unit.

[0050] The detection result by the distance sensor 250 can be output to the control unit CU. The control unit CU can measure the distance to the component based on the detection result of the distance sensor 250. By measuring the distance to the component, the control unit CU can measure the position and wear amount of the component.

[0051] In one embodiment, the distance sensor 250 has a lens 351 and a reflecting mirror 352 inside the tip portion 201. In one embodiment, the distance sensor 250 is connected to a controller 361 via an optical fiber 360. An optical switch 362 is interposed in the optical fiber 360. The optical fiber 360 is arranged to pass through a vacuum feedthrough 363 arranged in a partition wall between the vacuum space and the atmospheric space. The controller 361 and the optical switch 362 may be provided in the atmospheric space outside the vacuum transfer module TM.

[0052] In one embodiment, the controller 361 has a light source such as an LED. The controller 361 can supply measurement light to the distance sensor 250 through the optical fiber 360 and irradiate it from the opening 350 of the distance sensor 250 toward a component below. The controller 361 can also receive light reflected from the component through the distance sensor 250 and the optical fiber 360. Note that the configuration of the distance sensor 250 is not limited to this. The controller 361 may be included in the control unit CU.

[0053] <Configuration Example of Measurement Auxiliary Unit 400> Fig. 7 is a diagram illustrating a configuration example of the measurement auxiliary unit 400. Fig. 8 is a diagram illustrating an example of the measurement auxiliary unit 400 placed on the end effector EE1. Fig. 9 is a bottom view illustrating an example of the measurement auxiliary unit 400 placed on the end effector EE1. The measurement auxiliary unit 400 is a jig used when measuring the distance to a component using a distance sensor 250 to measure the wear amount and position of the component, and can be transported by being placed on the end effector EE1 of the vacuum transfer robot TR1. The measurement auxiliary unit 400 can also be transported by being placed on the end effector EE3 of the atmospheric transfer robot TR3.

[0054] In one embodiment, as shown in FIGS. 7 to 9, the measurement auxiliary unit 400 has a substrate portion 450, a condenser lens 451, and a support member 452.

[0055] The substrate unit 450 may have the same shape and size as the substrate to be processed in the plasma processing apparatus 1. That is, the substrate unit 450 may be capable of being placed on the end effector EE1 of the vacuum transfer robot TR1 for transport. For example, the substrate unit 450 may have a thin, disk-like shape. The material of the substrate unit 450 may be the same as or different from the substrate.

[0056] The condenser lens 451 is configured to condense light reflected from the component and output it to the distance sensor 250. As shown in Fig. 8, the condenser lens 451 is installed so as to be located below the opening 350 of the distance sensor 250 of each tip end 201 when the measurement auxiliary unit 400 is placed on the end effector EE1 of the vacuum transfer robot TR1. The condenser lens 451 is arranged at a position that includes at least the optical axis P1 of the light emitted downward from the opening 350 of the distance sensor 250.

[0057] The support member 452 is configured to support the condensing lens 451 at a position below the substrate portion 450 and spaced from the substrate portion 450. In one embodiment, the support member 452 has a holding portion 360 that holds the condensing lens 451 and a connecting portion 361 that connects the holding portion 360 to the substrate portion 450. The holding portion 360 has a cylindrical shape and holds the condensing lens 451 inside the cylinder. The connecting portion 361 may have a rod shape extending vertically. The connecting portion 361 is positioned so as not to interfere with the tip portion 201 of the end effector EE1 when the substrate portion 450 is placed on the end effector EE1 of the vacuum transfer robot TR1. The connecting portion 361 is positioned so as to pass vertically outside each tip portion 201 of the end effector EE1.

[0058] <Example of Substrate Processing> An example of substrate processing performed in the substrate processing system PS will be described. In one embodiment, the substrate processing is executed by the control unit CU. Substrates accommodated in containers C of load ports LP1 to LP4 shown in FIG. 1 are transferred to load lock modules LL1 and LL2 by the atmospheric transfer robot TR3 of the atmospheric transfer module LM. At this time, the interiors of the load lock modules LL1 and LL2 are maintained at atmospheric pressure. Next, the interiors of the load lock modules LL1 and LL2 are evacuated. Then, the vacuum transfer robot TR1 of the vacuum transfer module TM transfers the substrates from the load lock modules LL1 and LL2 through the vacuum transfer module TM to at least one of the process modules PM1 to PM6.

[0059] For example, the substrate is transferred to a plasma processing apparatus 1 of a substrate processing system, which is a process module. In the plasma processing apparatus 1, plasma processing is performed on the substrate.

[0060] The plasma processing includes an etching process in which plasma is used to etch a film on the substrate W. In one embodiment, the plasma processing is performed by a control unit 2 in a plasma processing apparatus 1 shown in FIG.

[0061] First, the substrate W is carried into the chamber 10 by the end effector EE1 of the vacuum transfer robot TR1, placed on the substrate support 11 by the lifter, and held on the substrate support 11 by suction.

[0062] Next, plasma is generated in the plasma processing space 10s by the plasma generation unit 12. First, a processing gas is supplied to the shower head 13 by the gas supply unit 20, and then supplied from the shower head 13 to the plasma processing space 10s. The processing gas supplied at this time includes a gas that generates activated species necessary for etching the substrate W.

[0063] A source RF signal is supplied from the power supply 30 to the upper electrode 13d and / or the lower electrode. A bias RF signal or a bias DC signal is supplied to the lower electrode. The atmosphere in the plasma processing space 10s is exhausted from the gas exhaust port 10e, and the inside of the plasma processing space 10s is reduced in pressure. Plasma is generated from the processing gas on the substrate support 11 in the plasma processing space 10s, and the substrate W is etched.

[0064] When plasma processing is completed, the substrate is unloaded from the chamber 10 by the vacuum transfer robot TR1 of the vacuum transfer module TM. The substrate is transferred by the vacuum transfer robot TR1 through the vacuum transfer module TM to the load lock modules LL1 and LL2. Alternatively, the substrate is transferred by the vacuum transfer robot TR1 through the vacuum transfer module TM to another process module PM1 to M6, where it is processed and then transferred to the load lock modules LL1 and LL2. Next, the substrate is transferred from the load lock modules LL1 and LL2 to the containers C of the load ports LP1 to LP4 by the atmospheric transfer robot TR3 of the atmospheric transfer module LM.

[0065] <Example of Measuring Wear Amount and Position of Component> In the substrate processing system PS, the wear amount and position of a component are measured. For example, the wear amount and position of the edge ring 112a of the plasma processing apparatus 1 are measured. This measurement is performed by at least one of the control unit CU and the control unit 2. Figure 10 shows an example of a flowchart of this measurement. In one embodiment, this measurement includes steps TS-1 to TS-8.

[0066] In step TS-1, the end effector EE1 of the vacuum transfer robot TR1 is moved into the chamber 10 of the plasma processing apparatus 1, and the wear amount and position of the edge ring are measured by the distance sensor 250. At this time, as shown in FIG. 6 , the opening 350 of the distance sensor 250 is positioned above the edge ring 112a. Light is supplied from the controller 361 to the distance sensor 250 via the optical fiber 360, and the light is irradiated from the opening 350 of the distance sensor 250 toward the edge ring 112a below. The light reflected by the edge ring 112a is then received by the controller 361 via the distance sensor 250 and the optical fiber 360, thereby obtaining a signal indicating the distance to the edge ring 112a. The detection result by the distance sensor 250 is output to the control unit CU, which measures the distance to the edge ring 112a based on the detection result of the distance sensor 250. The control unit CU measures the wear amount and position of the edge ring 112a by measuring the distance to the edge ring 112a.

[0067] In step TS-2, the strength of the signal received by the distance sensor 250 and the controller 361 is checked. The signal strength of the distance sensor 250 may be checked by the control unit CU.

[0068] If the signal strength received by the controller 361 exceeds the detection limit, the distance sensor 250 continues to measure the wear amount and position of the part (step TS-3). After that, the end effector EE1 of the vacuum transfer robot TR1 is moved from the plasma processing device 1 to the vacuum transfer module (step TS-4).

[0069] When the signal strength received by the controller 361 falls below the detection limit due to tilt or surface roughness of the measurement target, the measurement auxiliary unit 400 housed in the storage SR shown in FIG. 1 is transported to the load lock modules LL1 and LL2 (step TS-5). At this time, the measurement auxiliary unit 400 is placed on the end effector EE3 and transported by the atmospheric transfer robot TR3. The load lock modules LL1 and LL2 receive the measurement auxiliary unit 400 from the atmospheric transfer robot TR3 with the lifter pins raised on the stage. At this time, the interiors of the load lock modules LL1 and LL2 are maintained at atmospheric pressure.

[0070] Next, the measurement auxiliary units 400 of the load lock modules LL1 and LL2 are transferred to the plasma processing apparatus 1 (step TS-6). At this time, the insides of the load lock modules LL1 and LL2 are evacuated. The vacuum transfer robot TR1 receives the measurement auxiliary units 400 of the load lock modules LL1 and LL2 by placing them on the end effector EE1, and the measurement auxiliary units 400 are transferred into the chamber 10 of the plasma processing apparatus 1 by the vacuum transfer robot TR1. At this time, as shown in FIG. 11 , the opening 350 of the distance sensor 250 at the tip 201 of the end effector EE1 is positioned above the edge ring 112a. Furthermore, the measurement auxiliary unit 400 placed on the end effector EE1 is transferred to above the edge ring 112a, and the condenser lens 451 is positioned above the edge ring 112a and below the opening 350 of the distance sensor 250.

[0071] Next, the distance sensor 250 measures the wear amount and position of the edge ring 112a using the measurement auxiliary unit 400 (step TS-7 in FIG. 10 ). As shown in FIG. 11 , light supplied from the controller 361 is irradiated from the opening 350 of the distance sensor 250 toward the lower edge ring 112a. The light reflected by the edge ring 112a is then received by the distance sensor 250 via a condenser lens 451 and by the controller 361 via an optical fiber 360, thereby obtaining a signal indicating the distance to the edge ring 112a. The detection result by the distance sensor 250 is output to the control unit CU, which measures the distance to the edge ring 112a based on the detection result of the distance sensor 250. The control unit CU measures the wear amount and position of the edge ring 112a by measuring the distance to the edge ring 112a.

[0072] After the measurement of the wear amount and position of the edge ring 112a is completed, the measurement auxiliary unit 400 is transferred to the storage SR (step TS-8 in FIG. 10). At this time, the measurement auxiliary unit 400 is transferred by the vacuum transfer robot TR1 from the plasma processing apparatus 1 to the load lock modules LL1 and LL2 via the vacuum transfer module TM, and then transferred by the atmospheric transfer robot TR3 from the load lock modules LL1 and LL2 to the storage SR via the atmospheric transfer module LM.

[0073] According to this exemplary embodiment, the substrate processing system PS comprises a vacuum transfer module TM, a vacuum transfer robot TR1 including an end effector EE1 and a distance sensor 250 attached to the end effector EE1, a plasma processing system connected to the vacuum transfer module TM, the plasma processing system including a plasma processing chamber 10, a substrate support 11 disposed in the plasma processing chamber 10, and an edge ring 112a disposed to surround the substrate on the substrate support 11, and a control unit CU, wherein the control unit CU is configured to place a measurement auxiliary unit 400 including a focusing lens 451 on the end effector EE1 and position the focusing lens 451 below the distance sensor 250, transport the measurement auxiliary unit 400 on the end effector EE1 using the vacuum transfer robot TR1, and measure the distance to the edge ring 112a via the focusing lens 451 using the distance sensor 250. According to this example, even when the edge ring 112a is worn and the upper surface becomes inclined, or when the surface of the edge ring 112a is inclined due to wear and the light reflected by the edge ring 112a deviates from the optical axis P1, the light can be collected by the collecting lens 451 and returned to the optical fiber 361 via the distance sensor 250, and detected by the controller 360. In other words, the numerical aperture of the distance sensor 250 can be increased, and as a result, the amount of wear and the position of the components in the substrate processing system can be appropriately detected.

[0074] Figures 12 and 13 show the results of experiments to evaluate the angle tolerance of the distance sensor. The experiments were conducted without a focusing lens, with a focusing lens (focal length f = 10 mm), and with a focusing lens (focal length f = 5 mm). The experiments were conducted by irradiating light onto multiple inclined surfaces with different angles, receiving the reflected light with a distance sensor, and measuring the light intensity. Figure 12 shows the angle tolerance in the X-axis direction, and Figure 13 shows the angle tolerance in the Y-axis direction. In Figures 12 and 13, the vertical axis represents the light intensity received by the distance sensor, and the horizontal axis represents the inclination angle of the inclined surface from which the light is reflected. The X-axis and Y-axis directions are horizontal directions that are orthogonal to each other.

[0075] As shown in Fig. 14, the detection limit was set based on the experimental results in Fig. 12, and the allowable angle was estimated using a pseudo-curve. Without a condenser lens, the allowable angle was approximately ±5°, with a condenser lens (focal length f = 10 mm), the allowable angle was approximately ±7°, and with a condenser lens (focal length f = 5 mm), the allowable angle was approximately ±10°. It can be seen that the presence of a condenser lens improves the angle allowance of the distance sensor.

[0076] In the above embodiment, the condenser lens 451 is attached to the measurement auxiliary unit 400, but it may be attached to the end effector of the transfer robot. For example, as shown in Fig. 15, the end effector EE1 of the vacuum transfer robot TR1 has a condenser lens 500 below the opening 350 of the distance sensor 250. The condenser lens 500 is supported by a support member 501.

[0077] The support member 501 is configured to support the condensing lens 500 at a position below and away from the tip portion 201 of the end effector EE1. The support member 501 has a holding portion 510 that holds the condensing lens 500, and a connecting portion 511 that connects the holding portion 510 and the tip portion 201.

[0078] The holding portion 510 has a cylindrical shape and holds the condenser lens 500 inside the cylinder. The connecting portion 511 may have a rod shape extending in the vertical direction.

[0079] In one embodiment, a measurement auxiliary unit 400 may be provided, which includes a base portion 450 , a condenser lens 451 , and a support member 452 .

[0080] Embodiments of the present disclosure further include the following aspects.

[0081] (Supplementary Note 1) A substrate processing system comprising: a vacuum transfer module; a transfer robot including an end effector and a distance sensor attached to the end effector and having an opening; a plasma processing module connected to the vacuum transfer module, the plasma processing module including a plasma processing chamber, a substrate support disposed in the plasma processing chamber, and an edge ring disposed to surround a substrate on the substrate support; and a controller, wherein the controller is configured to place a measurement auxiliary unit including a focusing lens on the end effector and position the focusing lens below the opening of the distance sensor, transfer the measurement auxiliary unit on the end effector using the transfer robot, and measure the distance to the edge ring via the focusing lens using the distance sensor.

[0082] (Supplementary Note 2) The substrate processing system according to Supplementary Note 1, wherein the measurement auxiliary unit includes: a substrate section; and a support member connected to the substrate section and supporting the condenser lens.

[0083] (Supplementary Note 3) A substrate processing system comprising: a vacuum transfer module; a transfer robot including an end effector, a distance sensor attached to the end effector and having an opening, and a focusing lens positioned below the opening of the distance sensor; a plasma processing module connected to the vacuum transfer module, the plasma processing module including a plasma processing chamber, a substrate support positioned in the plasma processing chamber, and an edge ring positioned to surround a substrate on the substrate support; and a controller, wherein the controller is configured to move the end effector of the transfer robot into the plasma processing chamber and measure a distance to the edge ring via the focusing lens using the distance sensor.

[0084] (Supplementary Note 4) The substrate processing system according to Supplementary Note 3, wherein the end effector includes a support member that supports the condenser lens.

[0085] The above embodiments are described for the purpose of explanation and are not intended to limit the scope of the present disclosure. Various modifications can be made to the above embodiments without departing from the scope and spirit of the present disclosure. For example, some components in one embodiment can be added to other embodiments. Also, some components in one embodiment can be replaced with corresponding components in other embodiments.

[0086] PS...substrate processing system, CU...controller, TM...vacuum transfer module, TR1...vacuum transfer robot, EE1...end effector, 1...plasma processing apparatus, 2...controller, 10...plasma processing chamber, 11...substrate support, 112a...edge ring, 250...distance sensor, 350...opening, 400...measurement auxiliary unit, 451...condenser lens, W...substrate

Claims

1. A substrate processing system comprising: a vacuum transfer module; a transfer robot including an end effector and a distance sensor attached to the end effector and having an opening; a plasma processing module connected to the vacuum transfer module, the plasma processing module including a plasma processing chamber, a substrate support disposed in the plasma processing chamber, and an edge ring disposed to surround a substrate on the substrate support; and a controller, wherein the controller is configured to place a measurement auxiliary unit including a focusing lens on the end effector and position the focusing lens below the opening of the distance sensor, transfer the measurement auxiliary unit on the end effector using the transfer robot, and measure the distance to the edge ring via the focusing lens using the distance sensor.

2. The substrate processing system according to claim 1, wherein the measurement auxiliary unit includes: a substrate portion; and a support member connected to the substrate portion and supporting the condenser lens.

3. A substrate processing system comprising: a vacuum transfer module; a transfer robot including an end effector, a distance sensor attached to the end effector and having an opening, and a focusing lens positioned below the opening of the distance sensor; a plasma processing module connected to the vacuum transfer module, the plasma processing module including a plasma processing chamber, a substrate support positioned in the plasma processing chamber, and an edge ring positioned to surround a substrate on the substrate support; and a controller, wherein the controller is configured to move the end effector of the transfer robot into the plasma processing chamber and measure the distance to the edge ring via the focusing lens using the distance sensor.

4. The substrate processing system according to claim 3, wherein the end effector includes a support member that supports the condenser lens.

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