Semiconductor light-emitting device

Abstract

The present invention addresses the problem of providing a semiconductor light-emitting device that has improved luminous efficiency while achieving the appearance of vivid color.　The problem is solved by a semiconductor light-emitting device including a semiconductor light-emitting element having a light emission peak in a wavelength region of 430-480 nm, and a sealing resin including a wavelength conversion material, wherein the wavelength conversion material includes a narrow-band fluoride phosphor having a peak emission wavelength in the red region, and at least two types of phosphors having a peak emission wavelength different from that of the narrow-band fluoride phosphor, and the integrated value of emission intensity of the emission light of the semiconductor light-emitting device is a specific value in the wavelength region of 490-540 nm and the wavelength region of more than 540 nm and no more than 600 nm in accordance with the color temperature of the emission light.

Description

Semiconductor light-emitting device

[0001] The present invention relates to a semiconductor light emitting device comprising a semiconductor light emitting element and a wavelength converting material.

[0002] 2. Description of the Related Art Semiconductor light emitting devices that emit white light by combining an LED (Light Emitting Diode) with a phosphor have a long life and low energy consumption, and have therefore become widely used in a variety of applications.

[0003] In the area of ​​general illumination among the application areas of semiconductor light emitting devices, semiconductor light emitting devices have been proposed that realize natural and vivid color appearance with respect to the color appearance of an illuminated object. For example, Patent Documents 1 and 2 disclose that, with respect to light that can achieve vivid color appearance, the average saturation difference (ΔC ａｖｅ ), that is, the high saturation of light.

[0004] Patent No. 5252107 Patent No. 5257538

[0005] On the other hand, light capable of achieving vivid color appearance, as exemplified by Patent Documents 1 and 2, needs to have a certain level of spectral intensity in wavelength regions where human visual sensitivity is low, particularly in the red region, and therefore has inevitably resulted in light-emitting devices with low luminous efficiency. An object of the present invention is to provide a semiconductor light-emitting device that achieves vivid color appearance while improving luminous efficiency.

[0006] In order to solve the above problems, the present inventors attempted to improve luminous efficiency by using a narrow-band fluoride phosphor as a phosphor in the red region, where human luminosity is low. However, although the use of a narrow-band fluoride phosphor as a phosphor in the red region improved luminous efficiency, some colors appeared dull, and it could not be said that the light achieved vivid color appearance across the entire color region.

[0007] Therefore, further research was conducted focusing on the spectrum of light emitted from semiconductor light-emitting devices, and it was found that when a narrow-band fluoride phosphor is used as a phosphor in the red region, the saturation of a specific color region, specifically C14 and C15 on the modified Munsell color chart, decreases. Based on this finding, a means of improving the saturation of C14 and C15 on the modified Munsell color chart was investigated, and it was discovered that by setting the emission intensity in the wavelength region of 490 nm to 540 nm and the emission intensity in the wavelength region of 540 nm to 600 nm at specific ratios relative to the reference light, it is possible to provide a semiconductor light-emitting device that achieves vivid color appearance while improving luminous efficiency.

[0008] The present invention includes the following aspects: [1] A semiconductor light-emitting device including a semiconductor light-emitting element having an emission peak in a wavelength region of 430 nm or more and 480 nm or less, and an encapsulating resin containing a wavelength converting material, wherein the wavelength converting material includes a narrow-band fluoride phosphor having a peak emission wavelength in a red region and at least two phosphors having a peak emission wavelength different from that of the narrow-band fluoride phosphor, and wherein the color temperature of light emitted from the semiconductor light-emitting device is 4500 K or less, and the semiconductor light-emitting device satisfies the following requirements (i') and (ii'): (i') the integral of the emission intensity in the wavelength region of 490 nm or more and 540 nm or less is 95% or more and 110% or less of the integral of the emission intensity of reference light of the same color temperature; (ii') the integral of the emission intensity in the wavelength region of more than 540 nm and 600 nm or less is 80% or more and 95% or less of the integral of the emission intensity of reference light of the same color temperature. [2] A semiconductor light emitting device comprising: a semiconductor light emitting element having an emission peak in a wavelength region of 430 nm or more and 480 nm or less; and an encapsulating resin containing a wavelength converting material, wherein the wavelength converting material comprises a narrow-band fluoride phosphor having a peak emission wavelength in a red region, and at least two phosphors having peak emission wavelengths different from those of the narrow-band fluoride phosphor; and the color temperature of light emitted from the semiconductor light emitting device is above 4500 K, and the semiconductor light emitting device satisfies the following requirements (i'') and (ii''). (i'') the integral value of the emission intensity in the wavelength region of 490 nm or more and 540 nm or less is 90% or more and 100% or less of the integral value of the emission intensity of reference light of the same color temperature; (ii'') the integral value of the emission intensity in the wavelength region of more than 540 nm and 600 nm or less is 85% or more and 97% or less of the integral value of the emission intensity of reference light of the same color temperature. [3] The semiconductor light emitting device according to [1] or [2], wherein the emitted light of the semiconductor light emitting device further satisfies the requirement (iii). (iii) the chroma (ΔC １４ ) and / or the saturation of C15 (ΔC １５ [4] The semiconductor light emitting device according to any one of [1] to [3], wherein the emitted light of the semiconductor light emitting device further satisfies requirement (iv). (iv) The average saturation (ΔC ａｖｅ) is 0.5 or more [5] The semiconductor light emitting device according to any one of [1] to [4], wherein the emitted light of the semiconductor light emitting device further satisfies requirement (v). (v) The integrated value of the emission intensity in the wavelength region of 660 nm to 780 nm is 10% or less of the integrated value of the emission intensity in the wavelength region of 380 nm to 780 nm [6] The semiconductor light emitting device according to any one of [1] to [5], wherein the emitted light of the semiconductor light emitting device further satisfies requirement (vi). (vi) The deviation (Duv) from the blackbody radiation locus is -0.005 or more and 0.005 or less [7] The semiconductor light emitting device according to any one of [1] to [6], wherein the luminous efficiency of radiation (LER) of the emitted light of the semiconductor light emitting device is 280 lm / W or more.

[0009] According to the present invention, it is possible to provide a semiconductor light emitting device that achieves vivid color appearance and improves luminous efficiency.

[0010] Graph showing the emission spectrum of the semiconductor light emitting device of Example 1-1. Graph showing the emission spectrum of the semiconductor light emitting device of Example 1-2. Graph showing the emission spectrum of the semiconductor light emitting device of Example 1-3. Graph showing the emission spectrum of the semiconductor light emitting device of Comparative Example 1-1. Graph showing the emission spectrum of the semiconductor light emitting device of Comparative Example 1-2. Graph showing the emission spectrum of the semiconductor light emitting device of Example 2. Graph showing the emission spectrum of the semiconductor light emitting device of Comparative Example 2-1. Graph showing the emission spectrum of the semiconductor light emitting device of Comparative Example 2-2.

[0011] The present invention will be described in more detail below, but the scope of the invention is not limited to the specific embodiments. When a numerical range is described in stages, the upper and lower limits of each numerical range can be arbitrarily combined.

[0012] One aspect of the present invention is a semiconductor light-emitting device that emits white light, the semiconductor light-emitting device including: a semiconductor light-emitting element having an emission peak in a wavelength region of 430 nm or more and 480 nm or less; and an encapsulating resin containing a wavelength converting material, wherein the wavelength converting material includes a narrow-band fluoride phosphor having a peak emission wavelength in a red region and at least two phosphors having peak emission wavelengths different from those of the narrow-band fluoride phosphor.

[0013] The semiconductor light-emitting device is a light-emitting device that emits white light, and the white light may be incandescent white light, warm white light, neutral white light, or daylight white light, with no particular limitation on its color temperature. It is typically 1600 K or higher, may be 2000 K or higher, or may be 2400 K or higher. It is also typically 12000 K or lower, may be 7000 K or lower, or may be 6500 K or lower. In this specification, "incandescent white" may mean a color temperature of more than 2600 K and less than 3000 K, "warm white" may mean a color temperature of more than 3000 K and less than 4500 K, "neutral white" may mean a color temperature of more than 4500 K and less than 5500 K, and "daylight white" may mean a color temperature of more than 5500 K and less than 6500 K.

[0014] The semiconductor light-emitting device includes a blue semiconductor light-emitting element having an emission peak in the wavelength region of 430 nm or more and 480 nm or less. Semiconductor light-emitting elements other than the blue semiconductor light-emitting element, such as a green semiconductor light-emitting element or a red semiconductor light-emitting element, may also be used in combination. The semiconductor light-emitting element is usually disposed on a substrate. The substrate may be any substrate capable of disposing the semiconductor light-emitting element, and is typically a plate-shaped substrate, but is not particularly limited thereto. One or more semiconductor light-emitting elements are disposed on the substrate, and multiple semiconductor light-emitting elements may be disposed in an array or in a planar configuration. The semiconductor light-emitting element disposed on the substrate is connected to a power source and is ready to emit predetermined light.

[0015] The semiconductor light emitting element disposed on the substrate is sealed with a sealing resin containing a plurality of wavelength conversion materials that convert the wavelength of the light emitted from the semiconductor light emitting element. With this configuration, the wavelength of part of the light emitted from the semiconductor light emitting element is converted by the wavelength conversion materials dispersed in the sealing resin, and the light becomes light with a wavelength different from that of the semiconductor light emitting element.

[0016] The sealing resin functions as a wavelength conversion member by including a plurality of wavelength conversion materials that convert the wavelength of light emitted from the semiconductor light emitting element. A light-transmitting resin can be used as the sealing resin, and typically, a silicone resin or an epoxy resin is used. The sealing resin may also include a light scattering material for scattering light. The light scattering material is not particularly limited, and various fillers may be used.

[0017] The wavelength converting material includes a narrow-band fluoride phosphor having a peak emission wavelength in the red region and at least two phosphors having peak emission wavelengths different from that of the narrow-band fluoride phosphor. The phosphors having peak emission wavelengths different from that of the narrow-band fluoride phosphor are hereinafter also referred to as "other phosphors."

[0018] The narrow band fluoride phosphors include Mn ４＋ is used as an activator, and A ２ Midfielder ６ (A is one or more selected from the group consisting of Na, K, Cs, and Zn; M is a metal element including Si) ２ MyMnzF ６ (0.9≦y+z≦1.1 and 0.001≦z≦0.4). ２ SiF ６ : Mn (which is called KSF phosphor) and Na ２ TiF ６ :Mn, etc., and KSF phosphor is preferred.

[0019] A narrow-band fluoride phosphor is a phosphor whose fluorescence spectrum has a small half-width. The half-width is usually 1 nm or more, and may be 2 nm or more, or 3 nm or more, and is usually less than 50 nm, and may be 30 nm or less, 10 nm or less, or 8 nm or less. Only one type of narrow-band fluoride phosphor may be used, or two or more types may be used.

[0020] At least two types of other phosphors are included, but the type and amount thereof are not particularly limited as long as the spectrum of light emitted from the semiconductor light-emitting device described below satisfies certain requirements. Phosphors necessary for adjusting the spectrum of emitted light can be appropriately contained. Examples of other phosphors include blue phosphors, green phosphors, yellow phosphors, orange phosphors, and red phosphors, which are appropriately blended so as to satisfy requirements (i') and (ii'), or (i'') and (ii'', and preferably also requirements (iii) to (vi) described below. In particular, from the viewpoint of satisfying requirements (i') and (ii'), or (i'') and (ii''), it is preferable to include at least one phosphor selected from the group consisting of green phosphors, yellow phosphors, and orange phosphors.

[0021] Examples of green and yellow phosphors include Ce ３＋ aluminate with Eu as an activator ２＋ Activated alkaline earth silicate, Eu ２＋ Activated alkaline earth silicon nitride, Ce ３＋ Among these, garnet phosphors having a garnet structure, such as YAG and LuAG, are preferred, and LuAG phosphors represented by the following general formula (I) are preferred. ａ (Ce, Tb, Y) ｂ (Ga, Sc) ｃ Al ｄ O ｅ ... (I) In general formula (I), a, b, c, d, and e satisfy a+b=3, 0≦b≦0.2, 4.5≦c+d≦5.5, 0≦c≦2.6, and 10.8≦e≦13.4.

[0022] Examples of orange phosphors include CaAlSiN ３ :Eu phosphor (called CASN phosphor), (Ca, Sr, Ba, Mg)AlSiN ３ : Eu and / or (Ca, Sr, Ba)AlSiN ３ : Phosphors represented by Eu (called SCASN phosphors), (Sr, Ca, Ba) ２ Al ｘ Si ５－ｘ Oｘ N ８－ｘ : Eu (where 0≦x≦2) (referred to as 258 nitride phosphor), and M ｘ EU ｙ (Si, Al) １２ (O, N) １６ (M is selected from Li, Mg, Ca, and Y) (called α-sialon). Of these, SCASN phosphors are preferably used.

[0023] The amount of the phosphor in the sealing resin containing the phosphor as a wavelength conversion material is not particularly limited, and can be appropriately set by a person skilled in the art so that white light having a desired emission spectrum or color temperature is emitted. In this embodiment, from the viewpoint of luminous efficiency, the content of the fluoride phosphor is preferably 10 wt % or more and 80 wt % or less, and more preferably 15 wt % or more and 65 wt % or less, relative to the weight of the light-transmitting material.

[0024] The semiconductor light emitting device emits white light, and the emission spectrum of the emitted light satisfies the following requirements (i') and (ii') or the following requirements (i'') and (ii'') depending on the color temperature of the white light.

[0025] In this embodiment, a narrow-band fluoride phosphor is used to improve the luminous efficiency of the semiconductor light-emitting device, but this causes a problem in that some colors appear dull, making it impossible to achieve vivid color appearance across all color regions. The semiconductor light-emitting device can achieve both luminous efficiency and color appearance by satisfying the following requirements for the spectrum of white light emitted by the semiconductor light-emitting device according to the color temperature of the white light. When the color temperature of the emitted light from the semiconductor light-emitting device is 4500 K or less, for example, when the light is "warm white," the following requirements (i') and (ii') are satisfied: (i') the integrated value of the luminous intensity in the wavelength region of 490 nm to 540 nm is 95% to 110% of the integrated value of the luminous intensity of reference light at the same color temperature; and (ii') the integrated value of the luminous intensity in the wavelength region of more than 540 nm to 600 nm is 80% to 95% of the integrated value of the luminous intensity of reference light at the same color temperature.

[0026] Furthermore, when the color temperature of the emitted light from the semiconductor light emitting device is greater than 4500 K, for example, when the light is "daylight" white light, the following requirements (i") and (ii") are satisfied: (i") The integrated value of the emission intensity in the wavelength region of 490 nm to 540 nm is 90% to 100% of the integrated value of the emission intensity of reference light at the same color temperature; (ii") The integrated value of the emission intensity in the wavelength region of greater than 540 nm and less than 600 nm is 85% to 97% of the integrated value of the emission intensity of reference light at the same color temperature. The values ​​(%) of (i') and (ii') above may be within the above ranges, but from the viewpoint of the appearance of the red region, it is preferable that the value (%) of (i') is greater than the value (ii'). Similarly, the values ​​(%) of (i'') and (ii'') may be within the above ranges, but it is preferable from the viewpoint of the appearance of the red region that the value (%) of (i'') is greater than the value (%) of (ii'').

[0027] In order to obtain an emission spectrum that satisfies the above requirements, it is preferable to use a phosphor having a peak wavelength in the range of 490 nm to 600 nm, in particular a green phosphor, a yellow phosphor, and an orange phosphor, as the wavelength conversion material and adjust the content thereof.

[0028] The spectrum of white light emitted by the semiconductor light emitting device preferably satisfies at least one of the following (iii) to (vi). It may also satisfy all of them: (iii) chroma (ΔC １４ ) and / or the saturation of C15 (ΔC １５ (iv) the average saturation (ΔC ａｖｅ (v) the integral value of the emission intensity in the wavelength region of 660 nm to 780 nm is 10% or less of the integral value of the emission intensity in the wavelength region of 380 nm to 780 nm; and (vi) the deviation (Duv) from the blackbody radiation locus is -0.005 or more and 0.005 or less.

[0029] By satisfying (iii), the appearance of red is improved, and more vivid color appearance can be achieved. By satisfying (iv), more vivid color appearance can be achieved. By satisfying (v), the spectral intensity in the wavelength region with low luminosity is suppressed, thereby achieving high luminous efficiency. By satisfying (vi), the apparent color of the white light emitted by the semiconductor light emitting device becomes a natural white. The above requirements (iii) to (vi) can also be achieved by appropriately changing the type and amount of phosphor used as the wavelength conversion material.

[0030] In this embodiment, the use of a narrow-band fluoride phosphor results in a semiconductor light-emitting device with high luminous efficiency. Specifically, the luminous efficiency of radiation (LER) of emitted light from the semiconductor light-emitting device is preferably 280 lm / W or more, and more preferably 300 lm / W or more.

[0031] Another embodiment of the present invention relates to a lighting method using a semiconductor light-emitting device, as follows: A method for illuminating an object using a semiconductor light-emitting device including a semiconductor light-emitting element having an emission peak in a wavelength range of 430 nm to 480 nm and an encapsulating resin containing a wavelength converting material, wherein the wavelength converting material includes a narrow-band fluoride phosphor having a peak emission wavelength in the red range and at least two phosphors having peak emission wavelengths different from those of the narrow-band fluoride phosphor, and the light emitted from the semiconductor light-emitting device has a color temperature of 4500 K or less, and illumination is performed so as to satisfy the following requirements (i') and (ii'): (i') the integrated value of the emission intensity in the wavelength range of 490 nm to 540 nm is 95% to 110% of the integrated value of the emission intensity of reference light of the same color temperature, and (ii') the integrated value of the emission intensity in the wavelength range of more than 540 nm to 600 nm is 80% to 95% of the integrated value of the emission intensity of reference light of the same color temperature.

[0032] Also, there is provided a method for illuminating an object using a semiconductor light emitting device including a semiconductor light emitting element having an emission peak in a wavelength region of 430 nm or more and 480 nm or less and an encapsulating resin including a wavelength converting material, wherein the wavelength converting material includes a narrow-band fluoride phosphor having a peak emission wavelength in a red region and at least two phosphors having peak emission wavelengths different from those of the narrow-band fluoride phosphor, and the illumination method is performed so that the color temperature of the light emitted from the semiconductor light emitting device exceeds 4500 K and the following requirements (i'') and (ii'') are satisfied: (i'') the integrated value of the emission intensity in the wavelength region of 490 nm or more and 540 nm or less is 90% or more and 100% or less of the integrated value of the emission intensity of reference light of the same color temperature; and (ii'') the integrated value of the emission intensity in the wavelength region of more than 540 nm and 600 nm or less is 85% or more and 97% or less of the integrated value of the emission intensity of reference light of the same color temperature.

[0033] The description of each component in the embodiment of the lighting method will be given by citing the description in the embodiment of the semiconductor light emitting device.

[0034] The semiconductor light emitting device according to the present embodiment emits white light and achieves high luminous efficiency and good color appearance, making it suitable for general lighting, but it may also be used for other purposes. Furthermore, its high luminous efficiency enables reduction in energy consumption, thereby contributing to the SDGs.

[0035] Example 1-1 A white light emitting device (color temperature: 3010 K) was fabricated by placing a blue semiconductor light emitting element (emission peak wavelength: approximately 450 nm) on a substrate, and then placing a wavelength conversion material (silicone resin containing a scattering agent) containing the following phosphors on top of that. The emission spectrum of the fabricated white light emitting device is shown in Figure 1, and the characteristics of the white light are shown in Table 1. - 17.1 wt% of garnet-based phosphor with a peak wavelength in the yellow to green region - 1.3 wt% of nitride phosphor with a peak wavelength in the orange region - 26.3 wt% of fluoride phosphor with a peak wavelength in the red region

[0036] Example 1-2 The content of the phosphor contained in the wavelength converting material in Example 1-1 was changed to produce a white light emitting device (color temperature: 3115 K) that emits white light with the emission spectrum shown in Figure 2. The characteristics of the white light are shown in Table 1.

[0037] Example 1-3: The content of the phosphor contained in the wavelength converting material in Example 1-1 was changed to produce a white light emitting device (color temperature: 3608 K) that emits white light with the emission spectrum shown in Figure 3. The characteristics of the white light are shown in Table 1.

[0038] Comparative Example 1-1: The content of the phosphor contained in the wavelength converting material in Example 1-1 was changed to produce a white light emitting device (color temperature: 3041 K) that emits white light with the emission spectrum shown in Fig. 4. The characteristics of the white light are shown in Table 1.

[0039] <Comparative Example 1-2> In Example 1-1, a nitride phosphor with a peak wavelength in the red region was used instead of the fluoride phosphor, and the content of the phosphor contained in the wavelength conversion material was changed to create a white light emitting device (color temperature: 3069 K) that emits white light with the emission spectrum shown in Fig. 5. The characteristics of the white light are shown in Table 1.

[0040]

[0041] In Table 1, in all Examples and Comparative Examples, ΔC ａｖｅ The values ​​of ΔC14 and ΔC15 were positive, achieving a vivid color appearance overall. On the other hand, in Comparative Example 1-1, where the emission spectrum intensity compared to the reference light in the wavelength range of 490 nm to 600 nm did not satisfy the desired range, the values ​​of ΔC14 and ΔC15 were lower than -1, making the red appear slightly dull and the color appearance in the red region insufficient. Furthermore, in Comparative Example 1-2, which did not contain a fluoride phosphor, the LER value was low and the luminous efficiency was not improved.

[0042] Example 2 The content of the phosphor contained in the wavelength converting material in Example 1-1 was changed to produce a white light emitting device (color temperature: 4906 K) that emits white light with the emission spectrum shown in Fig. 6. The characteristics of the white light are shown in Table 2.

[0043] Comparative Example 2-1 In Example 1-1, the content of the phosphor contained in the wavelength converting material was changed to produce a white light emitting device (color temperature: 4913 K) that emits white light with the emission spectrum shown in Fig. 7. The characteristics of the white light are shown in Table 2.

[0044] Comparative Example 2-2 In Example 1-1, a nitride phosphor with a peak wavelength in the red region was used instead of the fluoride phosphor, and the content of the phosphor contained in the wavelength conversion material was changed to create a white light emitting device (color temperature: 5425 K) that emits white light with the emission spectrum shown in Fig. 8. The characteristics of the white light are shown in Table 2.

[0045]

[0046] Table 2 shows that Example 2 can provide a semiconductor light-emitting device that achieves vivid color appearance across the entire color range while improving luminous efficiency, even when the light-emitting device emits white light with a high color temperature. On the other hand, Comparative Example 2-1, in which the emission spectrum intensity compared to the reference light in the wavelength range of 490 nm to 600 nm does not meet the desired range, had negative values ​​for ΔC14 and ΔC15, making red appear slightly dull, and the color appearance in the red range was insufficient. Furthermore, Comparative Example 2-2, which does not contain a fluoride phosphor, had a low LER value and did not improve luminous efficiency.

[0047] Although the present invention will be described in detail with reference to specific embodiments, it will be apparent to those skilled in the art that various changes and modifications can be made without departing from the spirit and scope of the present invention.

Claims

1. A semiconductor light emitting device comprising a semiconductor light emitting element having an emission peak in the wavelength region of 430 nm or more and 480 nm or less, and an encapsulating resin containing a wavelength converting material, wherein the wavelength converting material comprises a narrow-band fluoride phosphor having a peak emission wavelength in the red region and at least two phosphors having peak emission wavelengths different from those of the narrow-band fluoride phosphor, and wherein the color temperature of the light emitted from the semiconductor light emitting device is 4500 K or less, and the device satisfies the following requirements (i') and (ii'): (i') the integrated value of the emission intensity in the wavelength region of 490 nm or more and 540 nm or less is 95% or more and 110% or less of the integrated value of the emission intensity of reference light of the same color temperature, and (ii') the integrated value of the emission intensity in the wavelength region of more than 540 nm and 600 nm or less is 80% or more and 95% or less of the integrated value of the emission intensity of reference light of the same color temperature.

2. A semiconductor light emitting device comprising a semiconductor light emitting element having an emission peak in the wavelength region of 430 nm or more and 480 nm or less, and an encapsulating resin containing a wavelength converting material, wherein the wavelength converting material comprises a narrow-band fluoride phosphor having a peak emission wavelength in the red region and at least two phosphors having peak emission wavelengths different from those of the narrow-band fluoride phosphor, and wherein the color temperature of the light emitted from the semiconductor light emitting device is greater than 4500 K and the following requirements (i'') and (ii'') are satisfied: (i'') the integrated value of the emission intensity in the wavelength region of 490 nm or more and 540 nm or less is 90% or more and 100% or less of the integrated value of the emission intensity of reference light of the same color temperature; and (ii'') the integrated value of the emission intensity in the wavelength region of more than 540 nm and 600 nm or less is 85% or more and 97% or less of the integrated value of the emission intensity of reference light of the same color temperature.

3. The semiconductor light emitting device according to claim 1 or 2, wherein the emitted light of the semiconductor light emitting device further satisfies requirement (iii). (iii) Chroma (ΔC １４ ) and / or the saturation of C15 (ΔC １５ ) is 0 or greater 4. The semiconductor light emitting device according to claim 1 or 2, wherein the emitted light of the semiconductor light emitting device further satisfies requirement (iv). (iv) The average saturation (ΔC ａｖｅ ) is 0.5 or more 5. The semiconductor light emitting device according to claim 1 or 2, wherein the emitted light of said semiconductor light emitting device further satisfies requirement (v): (v) the integrated value of the emission intensity in the wavelength region of 660 nm to 780 nm is 10% or less of the integrated value of the emission intensity in the wavelength region of 380 nm to 780 nm.

6. The semiconductor light emitting device according to claim 1 or 2, wherein the emitted light of the semiconductor light emitting device further satisfies requirement (vi). (vi) The deviation (Duv) from the blackbody radiation locus is between -0.005 and 0.

005.

7. The semiconductor light emitting device according to claim 1 or 2, wherein the luminous efficiency of radiation (LER) of emitted light from said semiconductor light emitting device is 280 lm / W or more.

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