OLED display substrate and manufacturing method therefor, and display device

Abstract

The present disclosure relates to the technical field of display, and provides an OLED display substrate and a manufacturing method therefor, and a display device. The OLED display substrate comprises: a base; a driving circuit layer located on the base; a light-emitting device located on the side of the driving circuit layer distant from the base; and an optical layer located on a light-emitting side of the light-emitting device, wherein the optical layer has a transmittance less than 70% for light having a wavelength of 200-400 nm, and a transmittance higher than 85% for light having a wavelength of 500-800 nm.

Description

OLED display substrate, manufacturing method thereof, and display device

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority to Chinese patent application No. 202410309165.0 filed in China on March 18, 2024, the entire contents of which are incorporated herein by reference. Technical Field

[0003] The present disclosure relates to the field of display technology, and in particular to an OLED display substrate and a manufacturing method thereof, and a display device. Background Art

[0004] OLED (Organic Light-Emitting Diode) display devices have been listed as a next-generation display technology with great development prospects due to their advantages such as thinness, lightness, wide viewing angle, active luminescence, continuously adjustable luminous color, low cost, fast response speed, low energy consumption, low driving voltage, wide operating temperature range, simple production process, high luminous efficiency and flexible display.

[0005] In the wearable device sector, OLED displays are widely used in smartwatches, fitness trackers, and other wearable devices due to their thinness, lightness, and flexibility. They are also widely used in the automotive sector, where they can be found in central control displays, instrument panels, automotive lighting, and taillights.

[0006] In wearable devices or in-vehicle display applications, OLED display devices are frequently or long-term exposed to natural ambient light. The ultraviolet light (UV light) in natural light that enters the interior of the OLED display device will cause chemical reactions in the organic materials, accelerate the aging of the OLED display device, and shorten its lifespan. At the same time, some organic materials will change color or even produce self-luminescence due to the exposure to UV light, causing color shift in the OLED display device.

[0007] Summary of the Invention

[0008] The present disclosure provides an OLED display substrate and a manufacturing method thereof, and a display device, which can increase the lifespan of the OLED display substrate.

[0009] According to one embodiment of the present disclosure, an OLED display substrate includes:

[0010] substrate;

[0011] a driving circuit layer located on the substrate;

[0012] a light emitting device located on a side of the driving circuit layer away from the substrate;

[0013] The optical layer is located on the light-emitting side of the light-emitting device, and has a transmittance of less than 70% for light with a wavelength of 200 nanometers to 400 nanometers, and a transmittance of more than 85% for light with a wavelength of 500 nanometers to 800 nanometers.

[0014] In some embodiments, the optical layer is made of silicon nitride, and the thickness of the optical layer is 3300 nm to 3500 nm; or

[0015] The optical layer has a refractive index of 2.13-2.16 for light with a wavelength of 240 nanometers to 260 nanometers, and an extinction coefficient of 0.12-0.14; a refractive index of 1.94-1.96 for light with a wavelength of 340 nanometers to 360 nanometers, and an extinction coefficient of 0.17-0.20; a refractive index of 1.87-1.88 for light with a wavelength of 440 nanometers to 460 nanometers, and an extinction coefficient of 0.0013-0.0017; a refractive index of 1.84-1.85 for light with a wavelength of 540 nanometers to 560 nanometers, and an extinction coefficient of less than 0.00001; a refractive index of 1.82-1.83 for light with a wavelength of 640 nanometers to 660 nanometers, and an extinction coefficient of less than 0.00001; and a refractive index of 1.81-1.82 for light with a wavelength of 740-760 nanometers, and an extinction coefficient of less than 0.00001.

[0016] In some embodiments, the optical layer includes the following layers stacked in sequence:

[0017] a first optical film having a thickness of 130 nm to 132 nm, a refractive index of 1.31 to 1.32 for light with a wavelength of 200 nm to 800 nm, and an extinction coefficient of 0.0002 to 0.0003;

[0018] a second optical film having a thickness of 44 nm to 45 nm, a refractive index of 1.85 to 1.95 for light with a wavelength of 200 nm to 800 nm, and an extinction coefficient of 0.06 to 0.07;

[0019] a third optical film having a thickness of 58 nm to 59 nm, a refractive index of 1.25 to 1.35 for light with a wavelength of 200 nm to 800 nm, and an extinction coefficient of 0.04 to 0.05;

[0020] The fourth optical film has a thickness of 40 nanometers to 41 nanometers, a refractive index of 1.35 to 1.50 for light with a wavelength of 200 nanometers to 800 nanometers, and an extinction coefficient of 0.001 to 0.0015.

[0021] In some embodiments, the optical layer includes the following layers stacked in sequence:

[0022] a fifth optical film having a thickness of 16 nm to 20 nm, a refractive index of 1.30 to 1.40 for light with a wavelength of 200 nm to 800 nm, and an extinction coefficient of 0.0015 to 0.002;

[0023] a sixth optical film, wherein the sixth optical film is made of silicon nitride and has a thickness of 3300 nm to 3500 nm; or

[0024] The refractive index of the sixth optical film for light with a wavelength of 240 nanometers to 260 nanometers is 2.13-2.16, and the extinction coefficient is 0.12-0.14; the refractive index for light with a wavelength of 340 nanometers to 360 nanometers is 1.94-1.96, and the extinction coefficient is 0.17-0.20; the refractive index for light with a wavelength of 440 nanometers to 460 nanometers is 1.87-1.88, and the extinction coefficient is 0.0013-0.0017; the refractive index for light with a wavelength of 540 nanometers to 560 nanometers is 1.84-1.85, and the extinction coefficient is less than 0.00001; the refractive index for light with a wavelength of 640 nanometers to 660 nanometers is 1.82-1.83, and the extinction coefficient is less than 0.00001; the refractive index for light with a wavelength of 740 nanometers to 760 nanometers is 1.81-1.82, and the extinction coefficient is less than 0.00001.

[0025] In some embodiments, the surface of the fifth optical film away from the sixth optical film includes a plurality of raised optical structures arranged in an array, and adjacent optical structures are spaced at a preset distance from each other.

[0026] In some embodiments, the surface of the fifth optical film includes a plurality of first optical structures arranged in an array, the first optical structures are hemispherical, the distance d1 between the centers of the orthographic projections of adjacent first optical structures on the substrate is 2.00 μm-2.40 μm, the diameter of the orthographic projection of the first optical structure on the substrate is 0.18 μm-2.20 μm, the diameter of the orthographic projection of the first optical structure on the substrate is smaller than d1, and the height of the first optical structure is 0.09 μm-1.10 μm.

[0027] In some embodiments, the surface of the fifth optical film includes a plurality of second optical structures arranged in an array, the second optical structures are pyramidal, the distance d2 between the centers of the orthographic projections of adjacent second optical structures on the substrate is 2.00 μm-2.40 μm, the orthographic projection of the second optical structure on the substrate is a square, the side length of the square is 0.18 μm-2.20 μm, and the side length of the square is less than d2, the height of the second optical structure is 0.09 μm-1.10 μm, and the angle between the side surface of the second optical structure and the substrate is 40°-50°.

[0028] In some embodiments, the surface of the fifth optical film includes a plurality of third optical structures arranged in an array, the third optical structures are cylindrical, the distance d3 between the centers of the orthographic projections of adjacent third optical structures on the substrate is 2.00 μm-2.40 μm, the diameter of the orthographic projection of the third optical structure on the substrate is 0.18 μm-2.20 μm, the diameter of the orthographic projection of the third optical structure on the substrate is smaller than d3, and the height of the third optical structure is 0.09 μm-1.10 μm.

[0029] In some embodiments, along a direction away from the substrate, the light emitting device includes:

[0030] hole transport layer;

[0031] auxiliary light-emitting layer;

[0032] a luminescent layer;

[0033] hole blocking layer;

[0034] electron transport layer;

[0035] cathode;

[0036] a microcavity adjustment layer of a first refractive index;

[0037] A microcavity adjustment layer having a second refractive index, wherein the second refractive index is smaller than the first refractive index.

[0038] In some embodiments, the OLED display substrate further includes:

[0039] an auxiliary hole transport layer located on a side of the hole transport layer away from the auxiliary light-emitting layer; or

[0040] an auxiliary hole transport layer located between the hole transport layer and the auxiliary light-emitting layer;

[0041] The refractive index of the hole transport layer for light with a wavelength of 200 nm to 800 nm is 1.85-1.95, the refractive index of the auxiliary hole transport layer for light with a wavelength of 200 nm to 800 nm is 1.45-1.75, and the thickness of the auxiliary hole transport layer is less than that of the hole transport layer.

[0042] In some embodiments, along a direction away from the substrate, the light emitting device includes:

[0043] hole transport layer;

[0044] auxiliary light-emitting layer;

[0045] luminescent layer;

[0046] hole blocking layer;

[0047] electron transport layer;

[0048] additional hole transport layer;

[0049] Additional auxiliary light-emitting layer;

[0050] additional light-emitting layer;

[0051] additional hole blocking layer;

[0052] additional electron transport layer;

[0053] cathode;

[0054] a microcavity adjustment layer of a first refractive index;

[0055] A microcavity adjustment layer having a second refractive index, wherein the second refractive index is smaller than the first refractive index.

[0056] In some embodiments, the OLED display substrate further includes:

[0057] an auxiliary hole transport layer located on a side of the hole transport layer away from the auxiliary light-emitting layer; or

[0058] an auxiliary hole transport layer located between the hole transport layer and the auxiliary light-emitting layer; or

[0059] an auxiliary hole transport layer located between the electron transport layer and the additional hole transport layer; or

[0060] an auxiliary hole transport layer located between the additional hole transport layer and the additional auxiliary light-emitting layer;

[0061] Among them, the refractive index of the hole transport layer and the additional hole transport layer for light with a wavelength of 200 nanometers to 800 nanometers is 1.85-1.95, the refractive index of the auxiliary hole transport layer for light with a wavelength of 200 nanometers to 800 nanometers is 1.45-1.75, the thickness of the auxiliary hole transport layer is less than the thickness of the hole transport layer, and the thickness of the auxiliary hole transport layer is less than the thickness of the additional hole transport layer.

[0062] In some embodiments, the light-emitting device includes a blue light-emitting layer, a red light-emitting layer, and a green light-emitting layer, wherein the intrinsic spectrum peak of the blue light-emitting layer is 460 nm-480 nm, and the half-width is 15 nm-25 nm; the intrinsic spectrum peak of the green light-emitting layer is 520 nm-550 nm, and the half-width is 30 nm-60 nm; the intrinsic spectrum peak of the red light-emitting layer is 620 nm-640 nm, and the half-width is 25 nm-50 nm;

[0063] The half-height width is the width of the intrinsic spectrum of the light-emitting layer at half its height.

[0064] An embodiment of the present disclosure further provides a display device including the OLED display substrate described above.

[0065] The present disclosure also provides a method for manufacturing an OLED display substrate, comprising:

[0066] providing a substrate;

[0067] forming a driving circuit layer on the substrate;

[0068] forming a light-emitting device on a side of the driving circuit layer away from the substrate;

[0069] An optical layer is formed on the light-emitting side of the light-emitting device. The transmittance of the optical layer for light with a wavelength of 200 nanometers to 400 nanometers is lower than 70%, and the transmittance of the optical layer for light with a wavelength of 500 nanometers to 800 nanometers is higher than 85%. BRIEF DESCRIPTION OF THE DRAWINGS

[0070] FIG1 is a schematic cross-sectional view of an OLED display substrate according to an embodiment of the present disclosure;

[0071] Figure 2a is a schematic cross-sectional view of a single device;

[0072] Figure 2b is a schematic cross-sectional view of a tandem device;

[0073] FIG3 is a schematic diagram of the reflected color of the OLED display substrate surface;

[0074] FIG4 is a diagram of the intrinsic spectrum of the light-emitting layer material;

[0075] 5a-5b are schematic diagrams of providing an auxiliary hole transport layer in a light-emitting device according to an embodiment of the present disclosure;

[0076] 6a-6d are schematic diagrams showing another embodiment of the present disclosure in which an auxiliary hole transport layer is provided in a light-emitting device;

[0077] FIG7 is a schematic diagram of the transmittance of an OLED display substrate according to an embodiment of the present disclosure;

[0078] FIG8 is a schematic diagram of the reflected color of the surface of an OLED display substrate according to an embodiment of the present disclosure;

[0079] FIG9 is a schematic diagram of transmittance of an OLED display substrate according to another embodiment of the present disclosure;

[0080] FIG10 is a schematic diagram of the reflected color of the surface of an OLED display substrate according to another embodiment of the present disclosure;

[0081] FIG11 is a schematic top view of the surface of an optical layer according to another embodiment of the present disclosure;

[0082] FIG12 is a schematic diagram of the surface morphology of an optical layer according to another embodiment of the present disclosure;

[0083] FIG13 is a schematic diagram of transmittance of an OLED display substrate according to another embodiment of the present disclosure;

[0084] FIG14 is a schematic diagram of the reflected color of the surface of an OLED display substrate according to another embodiment of the present disclosure;

[0085] FIG15 is a schematic top view of the surface of an optical layer according to another embodiment of the present disclosure;

[0086] FIG16 is a schematic diagram of the surface morphology of an optical layer according to another embodiment of the present disclosure;

[0087] FIG17 is a schematic diagram of transmittance of an OLED display substrate according to another embodiment of the present disclosure;

[0088] FIG18 is a schematic diagram of the reflected color of the surface of an OLED display substrate according to another embodiment of the present disclosure;

[0089] FIG19 is a schematic top view of the surface of an optical layer according to another embodiment of the present disclosure;

[0090] FIG20 is a schematic diagram of the surface morphology of an optical layer according to another embodiment of the present disclosure;

[0091] FIG21 is a schematic diagram of transmittance of an OLED display substrate according to another embodiment of the present disclosure;

[0092] FIG22 is a schematic diagram of the reflected color of the surface of an OLED display substrate according to another embodiment of the present disclosure.

[0093] Reference numerals

[0094] 01Hole transport layer

[0095] 02 auxiliary light-emitting layer

[0096] 03 Luminous layer

[0097] 04Hole blocking layer

[0098] 05Electron Transport Layer

[0099] 06Additional hole transport layer

[0100] 07Additional auxiliary light-emitting layer

[0101] 08Additional luminous layer

[0102] 09Additional hole blocking layer

[0103] 10Additional electron transport layer

[0104] 11 cathode

[0105] 12 Microcavity adjustment layer of the first refractive index

[0106] 13 Microcavity adjustment layer of the second refractive index

[0107] 14 auxiliary hole transport layer

[0108] 15 substrate

[0109] 16 buffer layers

[0110] 17 Active layer

[0111] 18 gate

[0112] 19 source and drain

[0113] 20 first insulating layer

[0114] 21 second insulating layer

[0115] 22 flat layers

[0116] 23 Light-emitting devices

[0117] 24 pixel definition layer

[0118] 25 first inorganic encapsulation layer

[0119] 26 organic encapsulation layer

[0120] 27 second inorganic encapsulation layer

[0121] 28 touch layers

[0122] 29 adhesive layers

[0123] 30 package cover

[0124] 31 optical layers DETAILED DESCRIPTION

[0125] In order to make the technical problems, technical solutions and advantages to be solved by the embodiments of the present disclosure more clear, they will be described in detail below with reference to the accompanying drawings and specific embodiments.

[0126] Embodiments of the present disclosure provide an OLED display substrate and a manufacturing method thereof, and a display device, which can increase the lifespan of the OLED display substrate.

[0127] An embodiment of the present disclosure provides an OLED display substrate, comprising:

[0128] substrate;

[0129] a driving circuit layer located on the substrate;

[0130] a light emitting device located on a side of the driving circuit layer away from the substrate;

[0131] The optical layer is located on the light-emitting side of the light-emitting device, and has a transmittance of less than 70% for light with a wavelength of 200 nanometers to 400 nanometers, and a transmittance of more than 85% for light with a wavelength of 500 nanometers to 800 nanometers.

[0132] In this embodiment, an optical layer is provided on the light-emitting side of the light-emitting device, and the transmittance of the optical layer for light with a wavelength of 200 nanometers to 400 nanometers is less than 70%. In this way, the optical layer can block external ultraviolet light from entering the interior of the light-emitting device, thereby preventing the organic materials inside the light-emitting device from undergoing chemical reactions under the irradiation of ultraviolet light, delaying the aging of the light-emitting device, and increasing the life of the display substrate. In addition, it can also prevent the organic materials from changing color or generating self-luminescence due to the irradiation of ultraviolet light, thereby avoiding color deviation of the display substrate. At the same time, the transmittance of the optical layer for light with a wavelength of 500 nanometers to 800 nanometers is higher than 85%, which will not affect the normal display of the display substrate.

[0133] FIG1 is a cross-sectional schematic diagram of an OLED display substrate according to an embodiment of the present disclosure. As shown in FIG1 , the OLED display substrate includes a substrate 15, a buffer layer 16, an active layer 17, a gate 18, a source / drain electrode 19, a first insulating layer 20, a second insulating layer 21, a planarization layer 22, a light-emitting device 23, a pixel definition layer 24, a first inorganic encapsulation layer 25, an organic encapsulation layer 26, a second inorganic encapsulation layer 27, a touch layer 28, an adhesive layer 29, an encapsulation cover 30, and an optical layer 31, which are stacked in sequence. The substrate 15 can be a rigid substrate or a flexible substrate. Rigid substrates include, but are not limited to, inorganic non-metallic materials such as glass and silicon (Si), and have a thickness between 0.5 mm and 2 mm. Flexible substrates include, but are not limited to, organic polymer materials such as polyimide film (PI) and high-temperature resistant polyester film (PET), and have a thickness between 1 μm and 100 μm. The buffer layer 16 can be made of silicon nitride or silicon oxide, and have a thickness between 1 μm and 10 μm. The active layer 17 can be made of single-crystal silicon (A-Si), polycrystalline silicon (P-Si), or a mixture of single-crystal silicon and polycrystalline silicon, with a thickness between 100 nanometers and 1 micron. The gate 18 has a thickness between 100 nanometers and 1 micron. The source and drain electrodes 19 include a source electrode (Source) and a drain electrode (Drain), which are connected to the active layer 17 through vias penetrating the first insulating layer 20 and the second insulating layer 21, respectively. The drain electrode is also connected to the anode of the light-emitting device 23. The first insulating layer 20 can be made of silicon nitride, silicon oxide, or silicon oxynitride, with a thickness between 100 nanometers and 1 micron. The second insulating layer 21 can be made of silicon nitride, silicon oxide, or silicon oxynitride, with a thickness between 100 nanometers and 1 micron. The planarization layer 22 can be made of organic optical adhesive, with a thickness between 1 micron and 3 microns. The light-emitting device 23 can be a single device or a tandem device. The pixel definition layer 24 can be made of organic optical adhesive, with a thickness between 1 micron and 3 microns. The first inorganic encapsulation layer 25 can be made of silicon nitride, silicon oxide, or silicon oxynitride, with a thickness between 500 nanometers and 1 micron. The organic encapsulation layer 26 can be made of organic optical adhesive, with a thickness between 5 microns and 13 microns. The second inorganic encapsulation layer 27 can be made of silicon nitride, silicon oxide, or silicon oxynitride, with a thickness between 500 nanometers and 1 micron. The touch layer 28 is composed of metal traces and inorganic materials, with a thickness between 1 micron and 5 microns. The adhesive layer 29 can be made of organic optical adhesive, with a thickness between 1 micron and 5 microns. The encapsulation cover 30 can be made of glass, sapphire, or other organic polymer materials, with a thickness between 100 microns and 2 mm.The optical layer 31 can block the entry of ultraviolet light. In this embodiment, the optical layer 31 can be arranged on the side of the packaging cover 30 away from the substrate 15. Of course, the optical layer 31 is not limited to being arranged on the side of the packaging cover 30 away from the substrate 15, as long as it is located on the light-emitting side of the light-emitting device 23, that is, the optical layer 31 can also be located on the side of the pixel definition layer 24 away from the substrate 15, or the side of the second inorganic packaging layer 27 away from the substrate 15, or the side of the touch layer 28 away from the substrate 15.

[0134] In this embodiment, the optical layer can be a single-layer structure or a multi-layer structure. A multi-layer structure, i.e., the optical layer is a composite structure composed of multiple layers of thin films. As long as the transmittance of the optical layer for light with a wavelength of 200 nm to 400 nm is less than 70%, and the transmittance for light with a wavelength of 500 nm to 800 nm is greater than 85%, it is sufficient. To ensure that the optical layer can effectively block ultraviolet light from entering the light-emitting device, in some embodiments, the transmittance of the optical layer for light with a wavelength of 200 nm to 400 nm can be less than 40%. Furthermore, to ensure the display effect of the display substrate, the transmittance of the optical layer for light with a wavelength of 500 nm to 800 nm can be greater than 95%.

[0135] In this embodiment, the light emitting device may be a single device. As shown in FIG2a , along a direction away from the substrate, the light emitting device includes the following sequentially stacked components:

[0136] A hole transport layer (HTL) 01, wherein the thickness of the hole transport layer 01 is between 120 nm and 150 nm;

[0137] Auxiliary light-emitting layer (Prime) 02, the thickness of the auxiliary light-emitting layer 02 is between 5 nanometers and 100 nanometers;

[0138] Light-emitting layer (EML) 03, the thickness of the light-emitting layer 03 is between 20 nm and 60 nm;

[0139] a hole blocking layer (HBL) 04, wherein the thickness of the hole blocking layer 04 is between 5 nm and 10 nm;

[0140] An electron transport layer (ETL) 05, wherein the thickness of the electron transport layer 05 is between 20 nanometers and 50 nanometers;

[0141] a cathode (CTD) 11, wherein the thickness of the cathode 11 is between 8 nanometers and 15 nanometers;

[0142] a microcavity tuning layer (CPL) 12 of a first refractive index, having a thickness between 50 nm and 100 nm;

[0143] The microcavity adjustment layer 13 of the second refractive index has a thickness between 50 nanometers and 100 nanometers, wherein the second refractive index is smaller than the first refractive index. Through the cooperation between the microcavity adjustment layer 12 of the first refractive index and the microcavity adjustment layer 13 of the second refractive index, the light emitted by the light-emitting device can be converged in a direction perpendicular to the substrate, thereby improving the light extraction efficiency of the light-emitting device.

[0144] When the optical layer of this embodiment is not provided on the light-emitting side of the light-emitting device, the reflection hue L, a*, and b* of the light-emitting device in ambient light satisfy that L is between 0.9 and 1.0, a* is between 0.03 and 0.05, and b* is between -0.02 and 0.04; the surface reflection color coordinates CIE1931 satisfy that x is between 0.306 and 0.309, y is between 0.324 and 0.327, and the tristimulus value Y is between 0.096 and 0.098, as shown in FIG3 .

[0145] In this embodiment, in order to improve the light extraction efficiency of the light-emitting device, the OLED display substrate further includes an auxiliary hole transport layer 14. As shown in FIG5a , the auxiliary hole transport layer 14 can be located on a side of the hole transport layer 01 away from the auxiliary light-emitting layer 02; or, as shown in FIG5b , the auxiliary hole transport layer 14 can be located between the hole transport layer 01 and the auxiliary light-emitting layer 02.

[0146] Among them, the refractive index of the hole transport layer 01 for light with a wavelength of 200 nanometers to 800 nanometers is 1.85-1.95, and the refractive index of the auxiliary hole transport layer 14 for light with a wavelength of 200 nanometers to 800 nanometers is 1.45-1.75. The thickness of the auxiliary hole transport layer 14 is less than the thickness of the hole transport layer 01. Through the setting of the auxiliary hole transport layer 14, the light emitted by the light-emitting device can be converged in a direction perpendicular to the substrate, and the light extraction efficiency of the light-emitting device can be increased by 2.5%-6%. The thickness of the auxiliary hole transport layer 14 increases with the decrease of the refractive index.

[0147] In this embodiment, the light emitting device may also be a series device. As shown in FIG2 b , in a direction away from the substrate, the light emitting device includes the following sequentially stacked layers:

[0148] Hole transport layer 01, with a thickness between 120 nm and 150 nm;

[0149] Auxiliary light-emitting layer 02, with a thickness between 5 nanometers and 100 nanometers;

[0150] The light-emitting layer 03 has a thickness between 20 nanometers and 60 nanometers;

[0151] The hole blocking layer 04 has a thickness between 5 nm and 10 nm;

[0152] Electron transport layer 05, with a thickness between 20 nm and 50 nm;

[0153] Additional hole transport layer 06, with a thickness between 40 nm and 60 nm;

[0154] An additional auxiliary light-emitting layer 07 having a thickness between 5 nm and 50 nm;

[0155] Additional light-emitting layer 08, with a thickness between 20 nm and 60 nm;

[0156] An additional hole blocking layer 09 having a thickness between 5 nm and 10 nm;

[0157] An additional electron transport layer 10 having a thickness between 20 nm and 50 nm;

[0158] cathode 11, having a thickness between 8 nm and 15 nm;

[0159] A microcavity adjustment layer 12 of the first refractive index, having a thickness between 50 nm and 100 nm;

[0160] The microcavity adjustment layer 13 of the second refractive index has a thickness between 50 nanometers and 100 nanometers. The second refractive index is smaller than the first refractive index. Through the cooperation between the microcavity adjustment layer 12 of the first refractive index and the microcavity adjustment layer 13 of the second refractive index, the light emitted by the light-emitting device can be converged in a direction perpendicular to the substrate, thereby improving the light extraction efficiency of the light-emitting device.

[0161] When the optical layer of this embodiment is not provided on the light-emitting side of the light-emitting device, the reflection hue L, a*, and b* of the light-emitting device in ambient light satisfy that L is between 0.9 and 1.0, a* is between 0.03 and 0.05, and b* is between -0.02 and 0.04; the surface reflection color coordinates CIE1931 satisfy that x is between 0.306 and 0.309, y is between 0.324 and 0.327, and the tristimulus value Y is between 0.096 and 0.098, as shown in FIG3 .

[0162] In this embodiment, in order to improve the light extraction efficiency of the light-emitting device, the OLED display substrate further includes an auxiliary hole transport layer 14. As shown in FIG6a , the auxiliary hole transport layer 14 may be located on a side of the hole transport layer 01 away from the auxiliary light-emitting layer 02; or, as shown in FIG6b , the auxiliary hole transport layer 14 may be located between the hole transport layer 01 and the auxiliary light-emitting layer 02; or, as shown in FIG6c , the auxiliary hole transport layer 14 may be located between the electron transport layer 05 and the additional hole transport layer 06; or, as shown in FIG6d , the auxiliary hole transport layer 14 may be located between the additional hole transport layer 06 and the additional auxiliary light-emitting layer 07;

[0163] Among them, the refractive index of the hole transport layer 01 and the additional hole transport layer 06 for light with a wavelength of 200 nanometers to 800 nanometers is 1.85-1.95, and the refractive index of the auxiliary hole transport layer 14 for light with a wavelength of 200 nanometers to 800 nanometers is 1.45-1.75. The thickness of the auxiliary hole transport layer 14 is less than the thickness of the hole transport layer 01, and the thickness of the auxiliary hole transport layer 14 is less than the thickness of the additional hole transport layer 06. Through the setting of the auxiliary hole transport layer 14, the light emitted by the light-emitting device can be converged in a direction perpendicular to the substrate, thereby improving the light extraction efficiency of the light-emitting device by 5%-12.5%. The thickness of the auxiliary hole transport layer 14 increases with the decrease of the refractive index.

[0164] In this embodiment, the light-emitting device may include a blue light-emitting layer, a red light-emitting layer, and a green light-emitting layer. The intrinsic spectrum of the light-emitting layer material is shown in Figure 4, where point A is the spectral peak, L is the width at half height of the spectrum (full width at half maximum), and the shaded area ② occupies the entire spectral area ① is called the shoulder peak proportion. In this embodiment, the intrinsic spectrum peak of the blue light-emitting layer is 460 nm-480 nm, the half-width is 15 nm-25 nm, and the shoulder peak proportion is between 20% and 40%; the intrinsic spectrum peak of the green light-emitting layer is 520 nm-550 nm, the half-width is 30 nm-60 nm, and the shoulder peak proportion is between 40% and 60%; the intrinsic spectrum peak of the red light-emitting layer is 620 nm-640 nm, the half-width is 25 nm-50 nm, and the shoulder peak proportion is between 30% and 50%.

[0165] In a specific embodiment, the optical layer 31 can be made of silicon nitride, and the thickness of the optical layer 31 is 3300 nm to 3500 nm. The transmittance of ambient light with a wavelength of 200 nm to 800 nm through the optical layer 31 is shown in FIG7 . The transmittance of the ultraviolet light band with a wavelength of 200 nm to 400 nm is reduced to 0% to 40%, the transmittance of the visible light band with a wavelength of 500 nm to 800 nm is stable at more than 90%, and the transmittance of the blue light band with a wavelength of 450 nm to 500 nm is 75% to 90%, where REF is the light transmittance of the existing OLED display device. The optical layer 31 of this embodiment can effectively inhibit the corrosion of the light-emitting device by ultraviolet light in the ambient light, prevent the organic material inside the light-emitting device from undergoing chemical reactions under the irradiation of ultraviolet light, delay the aging of the light-emitting device, and increase the life of the display substrate. In addition, it can also prevent the organic material from discoloring or generating self-luminescence due to the irradiation of ultraviolet light, and avoid the color shift phenomenon of the display substrate.

[0166] In this embodiment, the optical layer 31 may also be made of other materials, such as the optical layer 31 having a refractive index of 2.13-2.16 and an extinction coefficient of 0.12-0.14 for light with a wavelength of 240 nm-260 nm; a refractive index of 1.94-1.96 and an extinction coefficient of 0.17-0.20 for light with a wavelength of 340 nm-360 nm; and a refractive index of 1.87-1.8 for light with a wavelength of 440 nm-460 nm. 8. The extinction coefficient is 0.0013-0.0017; the refractive index for light with a wavelength of 540 nanometers to 560 nanometers is 1.84-1.85, and the extinction coefficient is less than 0.00001; the refractive index for light with a wavelength of 640 nanometers to 660 nanometers is 1.82-1.83, and the extinction coefficient is less than 0.00001; the refractive index for light with a wavelength of 740-760 nanometers is 1.81-1.82, and the extinction coefficient is less than 0.00001.

[0167] When the optical layer 31 uses a material that meets the above refractive index and extinction coefficient, it can effectively block external ultraviolet light from entering the light-emitting device, prevent the organic material inside the light-emitting device from undergoing chemical reactions under the irradiation of ultraviolet light, delay the aging of the light-emitting device, and increase the life of the display substrate. In addition, it can also prevent the organic material from changing color or generating self-luminescence due to the irradiation of ultraviolet light, and avoid color deviation of the display substrate.

[0168] In this embodiment, the reflected hue L, a*, and b* of the ambient light on the optical layer 31 satisfy that L is between 0.9 and 1.0, a* is between -0.03 and 0.05, and b* is between -0.02 and 0.04; the surface reflection color coordinates CIE1931 satisfy that x is between 0.306 and 0.309, y is between 0.324 and 0.327, and the tristimulus value Y is between 0.096 and 0.098. As shown in Figure 8, a better "integrated black" effect can be achieved in the unlit state.

[0169] In another specific embodiment, the optical layer 31 may be a combination of multiple layers of thin films, wherein the optical layer includes the following sequentially stacked layers:

[0170] a first optical film having a thickness of 130 nm to 132 nm, a refractive index of 1.31 to 1.32 for light with a wavelength of 200 nm to 800 nm, and an extinction coefficient of 0.0002 to 0.0003;

[0171] a second optical film having a thickness of 44 nm to 45 nm, a refractive index of 1.85 to 1.95 for light with a wavelength of 200 nm to 800 nm, and an extinction coefficient of 0.06 to 0.07;

[0172] a third optical film having a thickness of 58 nm to 59 nm, a refractive index of 1.25 to 1.35 for light with a wavelength of 200 nm to 800 nm, and an extinction coefficient of 0.04 to 0.05;

[0173] The fourth optical film has a thickness of 40 nanometers to 41 nanometers, a refractive index of 1.35 to 1.50 for light with a wavelength of 200 nanometers to 800 nanometers, and an extinction coefficient of 0.001 to 0.0015.

[0174] The transmittance of the optical layer of this embodiment for the 200 nm-800 nm band is shown in Figure 9. The transmittance of the ultraviolet light band with a wavelength of 200 nm-400 nm is reduced to 40%-70%, the transmittance of the visible light band with a wavelength of 500 nm-800 nm is above 85%, and the transmittance of the blue light band with a wavelength of 450 nm-500 nm is 75%-85%. The optical layer 31 of this embodiment can effectively suppress the corrosion of the light-emitting device by ultraviolet light in the ambient light, avoid chemical reactions of the organic materials inside the light-emitting device under the irradiation of ultraviolet light, delay the aging of the light-emitting device, and improve the life of the display substrate. In addition, it can also prevent the organic material from changing color or generating self-luminescence due to the irradiation of ultraviolet light, and avoid color deviation of the display substrate.

[0175] In this embodiment, the reflected hue L, a*, and b* of ambient light on the optical layer 31 satisfy the following conditions: L is between 0.17 and 0.19, a* is between 0.8 and 0.9, and b* is between -1.0 and 2.0. The surface reflected color coordinates according to CIE1931 satisfy the following conditions: x is between 0.198 and 0.200, y is between 0.095 and 0.100, and tristimulus value Y is between 0.019 and 0.020, as shown in Figure 10. L is reduced by 75% to 85% compared to an OLED display substrate without an optical layer, achieving a superior "black" effect in the unlit state.

[0176] In another specific embodiment, the optical layer 31 may be a combination of multiple layers of thin films, wherein the optical layer includes the following sequentially stacked layers:

[0177] a fifth optical film having a thickness of 16 nm to 20 nm, a refractive index of 1.30 to 1.40 for light with a wavelength of 200 nm to 800 nm, and an extinction coefficient of 0.0015 to 0.002;

[0178] a sixth optical film, wherein the sixth optical film is made of silicon nitride and has a thickness of 3300 nm to 3500 nm; or

[0179] The refractive index of the sixth optical film for light with a wavelength of 240 nanometers to 260 nanometers is 2.13-2.16, and the extinction coefficient is 0.12-0.14; the refractive index for light with a wavelength of 340 nanometers to 360 nanometers is 1.94-1.96, and the extinction coefficient is 0.17-0.20; the refractive index for light with a wavelength of 440 nanometers to 460 nanometers is 1.87-1.88, and the extinction coefficient is 0.0013-0.0017; the refractive index for light with a wavelength of 540 nanometers to 560 nanometers is 1.84-1.85, and the extinction coefficient is less than 0.00001; the refractive index for light with a wavelength of 640 nanometers to 660 nanometers is 1.82-1.83, and the extinction coefficient is less than 0.00001; the refractive index for light with a wavelength of 740 nanometers to 760 nanometers is 1.81-1.82, and the extinction coefficient is less than 0.00001.

[0180] In this embodiment, the surface of the fifth optical film away from the sixth optical film includes a plurality of raised optical structures arranged in an array, and adjacent optical structures are spaced at a preset distance. As shown in FIG11 , the surface of the fifth optical film away from the sixth optical film includes n first optical structures arranged in an array (n is greater than 1), wherein The morphology of each first optical structure is shown in Figure 12. The first optical structure is hemispherical, and the distance d1 between the centers of the orthographic projections of adjacent first optical structures on the substrate is 2.00 μm-2.40 μm, that is, the Rpack length is between 1.00 μm and 1.20 μm; the diameter of the orthographic projection of the first optical structure on the substrate is 0.18 μm-2.20 μm, that is, the Rlense length is between 0.09 μm and 1.10 μm, and the diameter of the orthographic projection of the first optical structure on the substrate is smaller than d1, and the height of the first optical structure is 0.09 μm-1.10 μm.

[0181] The transmittance of the optical layer of this embodiment for the 200 nm-800 nm band is shown in Figure 13. The transmittance of the ultraviolet light band with a wavelength of 200 nm-400 nm is reduced to 0%-40%, the transmittance of the visible light band with a wavelength of 500 nm-800 nm is above 95%, and the transmittance of the blue light band with a wavelength of 450 nm-500 nm is 80%-95%. The optical layer 31 of this embodiment can effectively suppress the erosion of the light-emitting device by ultraviolet light in the ambient light, avoid chemical reactions of the organic materials inside the light-emitting device under the irradiation of ultraviolet light, delay the aging of the light-emitting device, and improve the life of the display substrate. In addition, it can also prevent the organic material from changing color or generating self-luminescence due to the irradiation of ultraviolet light, and avoid color deviation of the display substrate.

[0182] In this embodiment, the reflected hue L, a*, and b* of ambient light on the optical layer 31 satisfy the following conditions: L is between 0.35 and 0.37, a* is between -0.02 and 0, and b* is between -0.02 and 0. The surface reflected color coordinates CIE1931 satisfy the following conditions: x is between 0.307 and 0.309, y is between 0.327 and 0.328, and the tristimulus value Y is between 0.035 and 0.037, as shown in Figure 14. L is reduced by 60% to 70% compared to an OLED display substrate without an optical layer, achieving a good "black" effect in the unlit state.

[0183] In another embodiment, the optical layer 31 may be a combination of multiple layers of thin films, wherein the optical layer includes the following sequentially stacked layers:

[0184] a fifth optical film having a thickness of 16 nm to 20 nm, a refractive index of 1.30 to 1.40 for light with a wavelength of 200 nm to 800 nm, and an extinction coefficient of 0.0015 to 0.002;

[0185] a sixth optical film, wherein the sixth optical film is made of silicon nitride and has a thickness of 3300 nm to 3500 nm; or

[0186] The refractive index of the sixth optical film for light with a wavelength of 240 nanometers to 260 nanometers is 2.13-2.16, and the extinction coefficient is 0.12-0.14; the refractive index for light with a wavelength of 340 nanometers to 360 nanometers is 1.94-1.96, and the extinction coefficient is 0.17-0.20; the refractive index for light with a wavelength of 440 nanometers to 460 nanometers is 1.87-1.88, and the extinction coefficient is 0.0013-0.0017; the refractive index for light with a wavelength of 540 nanometers to 560 nanometers is 1.84-1.85, and the extinction coefficient is less than 0.00001; the refractive index for light with a wavelength of 640 nanometers to 660 nanometers is 1.82-1.83, and the extinction coefficient is less than 0.00001; the refractive index for light with a wavelength of 740 nanometers to 760 nanometers is 1.81-1.82, and the extinction coefficient is less than 0.00001.

[0187] In this embodiment, the surface of the fifth optical film away from the sixth optical film includes a plurality of raised optical structures arranged in an array, and adjacent optical structures are spaced at a preset distance. As shown in FIG15 , the surface of the fifth optical film away from the sixth optical film includes n second optical structures arranged in an array (n is greater than 1), wherein The morphology of each second optical structure is shown in Figure 16. The second optical structure is pyramidal, and the distance d2 between the centers of the orthographic projections of adjacent second optical structures on the substrate is 2.00 μm-2.40 μm, that is, the Rpack length is between 1.00 μm and 1.20 μm; the orthographic projection of the second optical structure on the substrate is a square, and the side length of the square is 0.18 μm-2.20 μm, that is, the Rlense length is between 0.09 μm and 1.10 μm, and the side length of the square is less than d2, and Rgap is between 0 μm and 0.1 μm; the height of the second optical structure is 0.09 μm-1.10 μm, and the angle Angle formed between the side surface of the second optical structure and the substrate is 40°-50°.

[0188] The transmittance of the optical layer of this embodiment for the 200 nm-800 nm band is shown in Figure 17. The transmittance of the ultraviolet light band with a wavelength of 200 nm-400 nm is reduced to 0%-45%, the transmittance of the visible light band with a wavelength of 500 nm-800 nm is above 98%, and the transmittance of the blue light band with a wavelength of 450 nm-500 nm is 80%-97%. The optical layer 31 can effectively inhibit the erosion of the light-emitting device by ultraviolet light in the ambient light while improving the transmittance of visible light, avoid the chemical reaction of the organic material inside the light-emitting device under the irradiation of ultraviolet light, delay the aging of the light-emitting device, and improve the life of the display substrate. In addition, it can also prevent the organic material from changing color or generating self-luminescence due to the irradiation of ultraviolet light, and avoid color deviation of the display substrate.

[0189] In this embodiment, the reflected hue L, a*, and b* of ambient light on the optical layer 31 satisfy the following conditions: L is between 0.17 and 0.19, a* is between -0.02 and 0, and b* is between -0.02 and 0. The surface reflected color coordinates CIE1931 satisfy the following conditions: x is between 0.307 and 0.309, y is between 0.327 and 0.328, and tristimulus value Y is between 0.034 and 0.036, as shown in Figure 18. L is reduced by 75% to 85% compared to an OLED display substrate without an optical layer, achieving a superior "black" effect in the unlit state.

[0190] In another embodiment, the optical layer 31 may be a combination of multiple layers of thin films, wherein the optical layer includes the following sequentially stacked layers:

[0191] a fifth optical film having a thickness of 16 nm to 20 nm, a refractive index of 1.30 to 1.40 for light with a wavelength of 200 nm to 800 nm, and an extinction coefficient of 0.0015 to 0.002;

[0192] a sixth optical film, wherein the sixth optical film is made of silicon nitride and has a thickness of 3300 nm to 3500 nm; or

[0193] The refractive index of the sixth optical film for light with a wavelength of 240 nanometers to 260 nanometers is 2.13-2.16, and the extinction coefficient is 0.12-0.14; the refractive index for light with a wavelength of 340 nanometers to 360 nanometers is 1.94-1.96, and the extinction coefficient is 0.17-0.20; the refractive index for light with a wavelength of 440 nanometers to 460 nanometers is 1.87-1.88, and the extinction coefficient is 0.0013-0.0017; the refractive index for light with a wavelength of 540 nanometers to 560 nanometers is 1.84-1.85, and the extinction coefficient is less than 0.00001; the refractive index for light with a wavelength of 640 nanometers to 660 nanometers is 1.82-1.83, and the extinction coefficient is less than 0.00001; the refractive index for light with a wavelength of 740 nanometers to 760 nanometers is 1.81-1.82, and the extinction coefficient is less than 0.00001.

[0194] In this embodiment, the surface of the fifth optical film away from the sixth optical film includes a plurality of raised optical structures arranged in an array, and adjacent optical structures are spaced at a preset distance. As shown in FIG19 , the surface of the fifth optical film away from the sixth optical film includes n third optical structures arranged in an array (n is greater than 1), wherein The morphology of each third optical structure is shown in Figure 20. The third optical structure is cylindrical, and the distance d3 between the centers of the orthographic projections of adjacent third optical structures on the substrate is 2.00 μm-2.40 μm, that is, the Rpack length is between 1.00 μm and 1.20 μm; the diameter of the orthographic projection of the third optical structure on the substrate is 0.18 μm-2.20 μm, that is, the Rbase length is between 0.09 μm and 1.10 μm, and the diameter of the orthographic projection of the third optical structure on the substrate is smaller than d3, and the height of the third optical structure is 0.09 μm-1.10 μm.

[0195] The transmittance of the optical layer of this embodiment for the 200 nm-800 nm band is shown in Figure 21. The transmittance of the ultraviolet light band with a wavelength of 200 nm-400 nm is reduced to 0%-45%, the transmittance of the visible light band with a wavelength of 500 nm-800 nm reaches 95%, and the transmittance of the blue light band with a wavelength of 450 nm-500 nm is 0%-95%. The optical layer 31 can effectively inhibit the corrosion of the light-emitting device by ultraviolet light in the ambient light while improving the transmittance of visible light, avoid the chemical reaction of the organic material inside the light-emitting device under the irradiation of ultraviolet light, delay the aging of the light-emitting device, and improve the life of the display substrate. In addition, it can also prevent the organic material from changing color or generating self-luminescence due to the irradiation of ultraviolet light, and avoid color deviation of the display substrate.

[0196] In this embodiment, the reflected hue L, a*, and b* of ambient light on the optical layer 31 satisfy the following conditions: L is between 0.45 and 0.55, a* is between -0.03 and 0.02, and b* is between -0.02 and 0. The surface reflected color coordinates CIE1931 satisfy the following conditions: x is between 0.307 and 0.309, y is between 0.327 and 0.328, and tristimulus value Y is between 0.052 and 0.055, as shown in Figure 22. L is reduced by 40% to 60% compared to an OLED display substrate without an optical layer, achieving a superior "black" effect in the unlit state.

[0197] An embodiment of the present disclosure further provides a display device including the OLED display substrate described above.

[0198] The display device includes, but is not limited to, components such as a radio frequency unit, a network module, an audio output unit, an input unit, a sensor, a display unit, a user input unit, an interface unit, a memory, a processor, and a power supply. Those skilled in the art will appreciate that the structure of the above-mentioned display device does not constitute a limitation on the display device, and the display device may include more or fewer of the above-mentioned components, or a combination of certain components, or a different arrangement of components. In the embodiments of the present disclosure, the display device includes, but is not limited to, a monitor, a mobile phone, a tablet computer, a television, a wearable electronic device, a navigation display device, and the like.

[0199] The display device can be any product or component with a display function, such as a television, a monitor, a digital photo frame, a mobile phone, a tablet computer, etc., wherein the display device also includes a flexible circuit board, a printed circuit board and a backplane.

[0200] The embodiments of the present disclosure further provide a method for manufacturing an OLED display substrate, for manufacturing the above-mentioned OLED display substrate, the manufacturing method comprising:

[0201] providing a substrate;

[0202] forming a driving circuit layer on the substrate;

[0203] forming a light-emitting device on a side of the driving circuit layer away from the substrate;

[0204] An optical layer is formed on the light-emitting side of the light-emitting device. The transmittance of the optical layer for light with a wavelength of 200 nanometers to 400 nanometers is lower than 70%, and the transmittance of the optical layer for light with a wavelength of 500 nanometers to 800 nanometers is higher than 85%.

[0205] In this embodiment, an optical layer is formed on the light-emitting side of the light-emitting device, and the transmittance of the optical layer for light with a wavelength of 200 nanometers to 400 nanometers is less than 70%. In this way, the optical layer can block external ultraviolet light from entering the interior of the light-emitting device, thereby preventing the organic material inside the light-emitting device from undergoing chemical reactions under the irradiation of ultraviolet light, delaying the aging of the light-emitting device, and increasing the life of the display substrate. In addition, it can also prevent the organic material from changing color or generating self-luminescence due to the irradiation of ultraviolet light, thereby avoiding color deviation of the display substrate. At the same time, the transmittance of the optical layer for light with a wavelength of 500 nanometers to 800 nanometers is higher than 85%, which will not affect the normal display of the display substrate.

[0206] FIG1 is a cross-sectional schematic diagram of an OLED display substrate according to an embodiment of the present disclosure. As shown in FIG1 , the OLED display substrate includes a substrate 15, a buffer layer 16, an active layer 17, a gate 18, a source / drain electrode 19, a first insulating layer 20, a second insulating layer 21, a planarization layer 22, a light-emitting device 23, a pixel definition layer 24, a first inorganic encapsulation layer 25, an organic encapsulation layer 26, a second inorganic encapsulation layer 27, a touch layer 28, an adhesive layer 29, an encapsulation cover 30, and an optical layer 31, which are stacked in sequence. The substrate 15 can be a rigid substrate or a flexible substrate. Rigid substrates include, but are not limited to, inorganic non-metallic materials such as glass and silicon (Si), and have a thickness between 0.5 mm and 2 mm. Flexible substrates include, but are not limited to, organic polymer materials such as polyimide film (PI) and high-temperature resistant polyester film (PET), and have a thickness between 1 μm and 100 μm. The buffer layer 16 can be made of silicon nitride or silicon oxide, and have a thickness between 1 μm and 10 μm. The active layer 17 can be made of single-crystal silicon (A-Si), polycrystalline silicon (P-Si), or a mixture of single-crystal silicon and polycrystalline silicon, with a thickness between 100 nanometers and 1 micron. The gate 18 has a thickness between 100 nanometers and 1 micron. The source and drain electrodes 19 include a source electrode (Source) and a drain electrode (Drain), which are connected to the active layer 17 through vias penetrating the first insulating layer 20 and the second insulating layer 21, respectively. The drain electrode is also connected to the anode of the light-emitting device 23. The first insulating layer 20 can be made of silicon nitride, silicon oxide, or silicon oxynitride, with a thickness between 100 nanometers and 1 micron. The second insulating layer 21 can be made of silicon nitride, silicon oxide, or silicon oxynitride, with a thickness between 100 nanometers and 1 micron. The planarization layer 22 can be made of organic optical adhesive, with a thickness between 1 micron and 3 microns. The light-emitting device 23 can be a single device or a tandem device. The pixel definition layer 24 can be made of organic optical adhesive, with a thickness between 1 micron and 3 microns. The first inorganic encapsulation layer 25 can be made of silicon nitride, silicon oxide, or silicon oxynitride, with a thickness between 500 nanometers and 1 micron. The organic encapsulation layer 26 can be made of organic optical adhesive, with a thickness between 5 microns and 13 microns. The second inorganic encapsulation layer 27 can be made of silicon nitride, silicon oxide, or silicon oxynitride, with a thickness between 500 nanometers and 1 micron. The touch layer 28 is composed of metal traces and inorganic materials, with a thickness between 1 micron and 5 microns. The adhesive layer 29 can be made of organic optical adhesive, with a thickness between 1 micron and 5 microns. The encapsulation cover 30 can be made of glass, sapphire, or other organic polymer materials, with a thickness between 100 microns and 2 mm.The optical layer 31 can block the entry of ultraviolet light. In this embodiment, the optical layer 31 can be arranged on the side of the packaging cover 30 away from the substrate 15. Of course, the optical layer 31 is not limited to being arranged on the side of the packaging cover 30 away from the substrate 15, as long as it is located on the light-emitting side of the light-emitting device 23, that is, the optical layer 31 can also be located on the side of the pixel definition layer 24 away from the substrate 15, or the side of the second inorganic packaging layer 27 away from the substrate 15, or the side of the touch layer 28 away from the substrate 15.

[0207] In this embodiment, the optical layer 31 can be a single-layer structure or a multi-layer structure. A multi-layer structure, i.e., the optical layer is a composite structure composed of multiple layers of thin films. As long as the transmittance of the optical layer for light with a wavelength of 200 nm to 400 nm is less than 70%, and the transmittance for light with a wavelength of 500 nm to 800 nm is greater than 85%, it is sufficient. To ensure that the optical layer can effectively block ultraviolet light from entering the light-emitting device, in some embodiments, the transmittance of the optical layer for light with a wavelength of 200 nm to 400 nm can be less than 40%. In addition, to ensure the display effect of the display substrate, the transmittance of the optical layer for light with a wavelength of 500 nm to 800 nm can be greater than 95%.

[0208] In a specific embodiment, the optical layer 31 can be made of silicon nitride, and the thickness of the optical layer 31 is 3300 nanometers to 3500 nanometers. The transmittance of ambient light with a wavelength of 200 nanometers to 800 nanometers through the optical layer 31 is shown in Figure 7. The transmittance of the ultraviolet light band with a wavelength of 200 nanometers to 400 nanometers is reduced to 0% to 40%, the transmittance of the visible light band with a wavelength of 500 nanometers to 800 nanometers is stable at more than 90%, and the transmittance of the blue light band with a wavelength of 450 nanometers to 500 nanometers is 75% to 90%. The optical layer 31 of this embodiment can effectively inhibit the erosion of the light-emitting device by ultraviolet light in the ambient light, avoid the chemical reaction of the organic material inside the light-emitting device under the irradiation of ultraviolet light, delay the aging of the light-emitting device, and improve the life of the display substrate. In addition, it can also prevent the organic material from changing color or generating self-luminescence due to the irradiation of ultraviolet light, and avoid the color shift phenomenon of the display substrate.

[0209] In this embodiment, the optical layer 31 may also be made of other materials, such as the optical layer 31 having a refractive index of 2.13-2.16 and an extinction coefficient of 0.12-0.14 for light with a wavelength of 240 nm-260 nm; a refractive index of 1.94-1.96 and an extinction coefficient of 0.17-0.20 for light with a wavelength of 340 nm-360 nm; and a refractive index of 1.87-1.8 for light with a wavelength of 440 nm-460 nm. 8. The extinction coefficient is 0.0013-0.0017; the refractive index for light with a wavelength of 540 nanometers to 560 nanometers is 1.84-1.85, and the extinction coefficient is less than 0.00001; the refractive index for light with a wavelength of 640 nanometers to 660 nanometers is 1.82-1.83, and the extinction coefficient is less than 0.00001; the refractive index for light with a wavelength of 740-760 nanometers is 1.81-1.82, and the extinction coefficient is less than 0.00001.

[0210] When the optical layer 31 uses a material that meets the above refractive index and extinction coefficient, it can effectively block external ultraviolet light from entering the light-emitting device, prevent the organic material inside the light-emitting device from undergoing chemical reactions under the irradiation of ultraviolet light, delay the aging of the light-emitting device, and increase the life of the display substrate. In addition, it can also prevent the organic material from changing color or generating self-luminescence due to the irradiation of ultraviolet light, and avoid color deviation of the display substrate.

[0211] In another specific embodiment, the optical layer 31 may be a combination of multiple layers of thin films, wherein the optical layer includes the following sequentially stacked layers:

[0212] a first optical film having a thickness of 130 nm to 132 nm, a refractive index of 1.31 to 1.32 for light with a wavelength of 200 nm to 800 nm, and an extinction coefficient of 0.0002 to 0.0003;

[0213] a second optical film having a thickness of 44 nm to 45 nm, a refractive index of 1.85 to 1.95 for light with a wavelength of 200 nm to 800 nm, and an extinction coefficient of 0.06 to 0.07;

[0214] a third optical film having a thickness of 58 nm to 59 nm, a refractive index of 1.25 to 1.35 for light with a wavelength of 200 nm to 800 nm, and an extinction coefficient of 0.04 to 0.05;

[0215] The fourth optical film has a thickness of 40 nanometers to 41 nanometers, a refractive index of 1.35 to 1.50 for light with a wavelength of 200 nanometers to 800 nanometers, and an extinction coefficient of 0.001 to 0.0015.

[0216] The transmittance of the optical layer of this embodiment for the 200 nm-800 nm band is shown in Figure 9. The transmittance of the ultraviolet light band with a wavelength of 200 nm-400 nm is reduced to 40%-70%, the transmittance of the visible light band with a wavelength of 500 nm-800 nm is above 85%, and the transmittance of the blue light band with a wavelength of 450 nm-500 nm is 75%-85%. The optical layer 31 of this embodiment can effectively suppress the corrosion of the light-emitting device by ultraviolet light in the ambient light, avoid chemical reactions of the organic materials inside the light-emitting device under the irradiation of ultraviolet light, delay the aging of the light-emitting device, and improve the life of the display substrate. In addition, it can also prevent the organic material from changing color or generating self-luminescence due to the irradiation of ultraviolet light, and avoid color deviation of the display substrate.

[0217] In another specific embodiment, the optical layer 31 may be a combination of multiple layers of thin films, wherein the optical layer includes the following sequentially stacked layers:

[0218] a fifth optical film having a thickness of 16 nm to 20 nm, a refractive index of 1.30 to 1.40 for light with a wavelength of 200 nm to 800 nm, and an extinction coefficient of 0.0015 to 0.002;

[0219] a sixth optical film, wherein the sixth optical film is made of silicon nitride and has a thickness of 3300 nm to 3500 nm; or

[0220] The refractive index of the sixth optical film for light with a wavelength of 240 nanometers to 260 nanometers is 2.13-2.16, and the extinction coefficient is 0.12-0.14; the refractive index for light with a wavelength of 340 nanometers to 360 nanometers is 1.94-1.96, and the extinction coefficient is 0.17-0.20; the refractive index for light with a wavelength of 440 nanometers to 460 nanometers is 1.87-1.88, and the extinction coefficient is 0.0013-0.0017; the refractive index for light with a wavelength of 540 nanometers to 560 nanometers is 1.84-1.85, and the extinction coefficient is less than 0.00001; the refractive index for light with a wavelength of 640 nanometers to 660 nanometers is 1.82-1.83, and the extinction coefficient is less than 0.00001; the refractive index for light with a wavelength of 740 nanometers to 760 nanometers is 1.81-1.82, and the extinction coefficient is less than 0.00001.

[0221] In this embodiment, the surface of the fifth optical film away from the sixth optical film includes a plurality of raised optical structures arranged in an array, with a preset distance between adjacent optical structures. The optical structures include the first optical structure, the second optical structure or the third optical structure.

[0222] In which, the first optical structure is hemispherical, and the distance d1 between the centers of the orthographic projections of adjacent first optical structures on the substrate is 2.00 μm-2.40 μm, that is, the Rpack length is between 1.00 μm and 1.20 μm; the diameter of the orthographic projection of the first optical structure on the substrate is 0.18 μm-2.20 μm, that is, the Rlense length is between 0.09 μm and 1.10 μm, and the diameter of the orthographic projection of the first optical structure on the substrate is smaller than d1, and the height of the first optical structure is 0.09 μm-1.10 μm.

[0223] The second optical structure is pyramidal, and the distance d2 between the centers of the orthographic projections of adjacent second optical structures on the substrate is 2.00 μm-2.40 μm, that is, the Rpack length is between 1.00 μm and 1.20 μm; the orthographic projection of the second optical structure on the substrate is a square, and the side length of the square is 0.18 μm-2.20 μm, that is, the Rlense length is between 0.09 μm and 1.10 μm, and the side length of the square is less than d2, and Rgap is between 0 μm and 0.1 μm; the height Height of the second optical structure is 0.09 μm-1.10 μm, and the angle Angle formed between the side surface of the second optical structure and the substrate is 40°-50°.

[0224] The third optical structure is cylindrical, and the distance d3 between the centers of the orthographic projections of adjacent third optical structures on the substrate is 2.00 μm-2.40 μm, that is, the Rpack length is between 1.00 μm and 1.20 μm; the diameter of the orthographic projection of the third optical structure on the substrate is 0.18 μm-2.20 μm, that is, the Rbase length is between 0.09 μm and 1.10 μm, and the diameter of the orthographic projection of the third optical structure on the substrate is smaller than d3, and the height of the third optical structure is 0.09 μm-1.10 μm.

[0225] In the various method embodiments of the present disclosure, the serial numbers of the steps cannot be used to limit the order of the steps. For ordinary technicians in this field, without paying any creative work, changes to the order of the steps are also within the scope of protection of the present disclosure.

[0226] It should be noted that the various embodiments in this specification are described in a progressive manner. Similar parts between the various embodiments can be referred to in conjunction with each other. Each embodiment focuses on the differences from other embodiments. In particular, since the embodiments are generally similar to the product embodiments, the description is relatively simple. For relevant parts, refer to the partial description of the product embodiments.

[0227] Unless otherwise defined, the technical or scientific terms used in this disclosure should have the usual meanings understood by persons of ordinary skill in the field to which this disclosure belongs. The words "first", "second" and similar terms used in this disclosure do not indicate any order, quantity or importance, but are only used to distinguish different components. Words such as "include" or "comprise" mean that the elements or objects appearing before the word include the elements or objects listed after the word and their equivalents, without excluding other elements or objects. Words such as "connect" or "connected" are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "Up", "down", "left", "right" and the like are only used to indicate relative positional relationships. When the absolute position of the object being described changes, the relative positional relationship may also change accordingly.

[0228] It will be understood that when an element such as a layer, film, region, or substrate is referred to as being “on” or “under” another element, it can be “directly on” or “under” the other element or intervening elements may be present.

[0229] In the description of the above embodiments, specific features, structures, materials or characteristics may be combined in an appropriate manner in any one or more embodiments or examples.

[0230] The above description is merely a specific embodiment of the present disclosure, but the scope of protection of the present disclosure is not limited thereto. Any changes or substitutions that can be easily conceived by a person skilled in the art within the technical scope disclosed in this disclosure should be included in the scope of protection of the present disclosure. Therefore, the scope of protection of the present disclosure should be based on the scope of protection of the claims.

Claims

1. An OLED display substrate, wherein: include: substrate; a driving circuit layer located on the substrate; a light emitting device located on a side of the driving circuit layer away from the substrate; The optical layer is located on the light-emitting side of the light-emitting device, and has a transmittance of less than 70% for light with a wavelength of 200 nanometers to 400 nanometers, and a transmittance of more than 85% for light with a wavelength of 500 nanometers to 800 nanometers.

2. The OLED display substrate according to claim 1, wherein: The optical layer is made of silicon nitride, and the thickness of the optical layer is 3300 nanometers to 3500 nanometers; or The optical layer has a refractive index of 2.13-2.16 for light with a wavelength of 240 nanometers to 260 nanometers, and an extinction coefficient of 0.12-0.14; a refractive index of 1.94-1.96 for light with a wavelength of 340 nanometers to 360 nanometers, and an extinction coefficient of 0.17-0.20; a refractive index of 1.87-1.88 for light with a wavelength of 440 nanometers to 460 nanometers, and an extinction coefficient of 0.0013-0.0017; a refractive index of 1.84-1.85 for light with a wavelength of 540 nanometers to 560 nanometers, and an extinction coefficient of less than 0.00001; a refractive index of 1.82-1.83 for light with a wavelength of 640 nanometers to 660 nanometers, and an extinction coefficient of less than 0.00001; and a refractive index of 1.81-1.82 for light with a wavelength of 740-760 nanometers, and an extinction coefficient of less than 0.00001.

3. The OLED display substrate according to claim 1, wherein: The optical layer comprises the following layers stacked in sequence: a first optical film having a thickness of 130 nm to 132 nm, a refractive index of 1.31 to 1.32 for light with a wavelength of 200 nm to 800 nm, and an extinction coefficient of 0.0002 to 0.0003; a second optical film having a thickness of 44 nm to 45 nm, a refractive index of 1.85 to 1.95 for light with a wavelength of 200 nm to 800 nm, and an extinction coefficient of 0.06 to 0.07; a third optical film having a thickness of 58 nm to 59 nm, a refractive index of 1.25 to 1.35 for light with a wavelength of 200 nm to 800 nm, and an extinction coefficient of 0.04 to 0.05; The fourth optical film has a thickness of 40 nanometers to 41 nanometers, a refractive index of 1.35 to 1.50 for light with a wavelength of 200 nanometers to 800 nanometers, and an extinction coefficient of 0.001 to 0.0015.

4. The OLED display substrate according to claim 1, wherein: The optical layer comprises the following layers stacked in sequence: a fifth optical film having a thickness of 16 nm to 20 nm, a refractive index of 1.30 to 1.40 for light with a wavelength of 200 nm to 800 nm, and an extinction coefficient of 0.0015 to 0.002; a sixth optical film, wherein the sixth optical film is made of silicon nitride and has a thickness of 3300 nm to 3500 nm; or The refractive index of the sixth optical film for light with a wavelength of 240 nanometers to 260 nanometers is 2.13-2.16, and the extinction coefficient is 0.12-0.14; the refractive index for light with a wavelength of 340 nanometers to 360 nanometers is 1.94-1.96, and the extinction coefficient is 0.17-0.20; the refractive index for light with a wavelength of 440 nanometers to 460 nanometers is 1.87-1.88, and the extinction coefficient is 0.0013-0.0017; the refractive index for light with a wavelength of 540 nanometers to 560 nanometers is 1.84-1.85, and the extinction coefficient is less than 0.00001; the refractive index for light with a wavelength of 640 nanometers to 660 nanometers is 1.82-1.83, and the extinction coefficient is less than 0.00001; the refractive index for light with a wavelength of 740 nanometers to 760 nanometers is 1.81-1.82, and the extinction coefficient is less than 0.00001.

5. The OLED display substrate according to claim 4, wherein: The surface of the fifth optical film away from the sixth optical film includes a plurality of raised optical structures arranged in an array, and adjacent optical structures are spaced at a preset distance from each other.

6. The OLED display substrate according to claim 5, wherein: The surface of the fifth optical film includes a plurality of first optical structures arranged in an array, the first optical structures are hemispherical, the distance d1 between the centers of the orthographic projections of adjacent first optical structures on the substrate is 2.00 microns-2.40 microns, the diameter of the orthographic projection of the first optical structure on the substrate is 0.18 microns-2.20 microns, and the diameter of the orthographic projection of the first optical structure on the substrate is smaller than d1, and the height of the first optical structure is 0.09 microns-1.10 microns.

7. The OLED display substrate according to claim 5, wherein: The surface of the fifth optical film includes a plurality of second optical structures arranged in an array, the second optical structures are pyramidal, and the distance d2 between the centers of the orthographic projections of adjacent second optical structures on the substrate is 2.00 μm-2.40 μm. The orthographic projection of the second optical structure on the substrate is a square, the side length of the square is 0.18 μm-2.20 μm, and the side length of the square is less than d2. The height of the second optical structure is 0.09 μm-1.10 μm, and the angle between the side surface of the second optical structure and the substrate is 40°-50°.

8. The OLED display substrate according to claim 5, wherein: The surface of the fifth optical film includes a plurality of third optical structures arranged in an array, the third optical structures are cylindrical, the distance d3 between the centers of the orthographic projections of adjacent third optical structures on the substrate is 2.00 μm-2.40 μm, the diameter of the orthographic projection of the third optical structure on the substrate is 0.18 μm-2.20 μm, and the diameter of the orthographic projection of the third optical structure on the substrate is smaller than d3, and the height of the third optical structure is 0.09 μm-1.10 μm.

9. The OLED display substrate according to any one of claims 1 to 8, wherein: Along a direction away from the substrate, the light emitting device includes: hole transport layer; auxiliary light-emitting layer; luminescent layer; hole blocking layer; electron transport layer; cathode; a microcavity adjustment layer of a first refractive index; A microcavity adjustment layer having a second refractive index, wherein the second refractive index is smaller than the first refractive index.

10. The OLED display substrate according to claim 9, wherein: The OLED display substrate further includes: an auxiliary hole transport layer located on a side of the hole transport layer away from the auxiliary light-emitting layer; or an auxiliary hole transport layer located between the hole transport layer and the auxiliary light-emitting layer; The refractive index of the hole transport layer for light with a wavelength of 200 nm to 800 nm is 1.85-1.95, the refractive index of the auxiliary hole transport layer for light with a wavelength of 200 nm to 800 nm is 1.45-1.75, and the thickness of the auxiliary hole transport layer is less than that of the hole transport layer.

11. The OLED display substrate according to any one of claims 1 to 8, wherein: Along a direction away from the substrate, the light emitting device includes: hole transport layer; auxiliary light-emitting layer; luminescent layer; hole blocking layer; electron transport layer; additional hole transport layer; Additional auxiliary light-emitting layer; additional light-emitting layer; additional hole blocking layer; additional electron transport layer; cathode; a microcavity adjustment layer of a first refractive index; A microcavity adjustment layer having a second refractive index, wherein the second refractive index is smaller than the first refractive index.

12. The OLED display substrate according to claim 11, wherein: The OLED display substrate further includes: an auxiliary hole transport layer located on a side of the hole transport layer away from the auxiliary light-emitting layer; or an auxiliary hole transport layer located between the hole transport layer and the auxiliary light-emitting layer; or an auxiliary hole transport layer located between the electron transport layer and the additional hole transport layer; or an auxiliary hole transport layer located between the additional hole transport layer and the additional auxiliary light-emitting layer; Among them, the refractive index of the hole transport layer and the additional hole transport layer for light with a wavelength of 200 nanometers to 800 nanometers is 1.85-1.95, the refractive index of the auxiliary hole transport layer for light with a wavelength of 200 nanometers to 800 nanometers is 1.45-1.75, the thickness of the auxiliary hole transport layer is less than the thickness of the hole transport layer, and the thickness of the auxiliary hole transport layer is less than the thickness of the additional hole transport layer.

13. The OLED display substrate according to claim 10, wherein: The light-emitting device includes a blue light-emitting layer, a red light-emitting layer, and a green light-emitting layer. The intrinsic spectrum peak of the blue light-emitting layer is 460 nm to 480 nm, and the half-maximum width is 15 nm to 25 nm; the intrinsic spectrum peak of the green light-emitting layer is 520 nm to 550 nm, and the half-maximum width is 30 nm to 60 nm; the intrinsic spectrum peak of the red light-emitting layer is 620 nm to 640 nm, and the half-maximum width is 25 nm to 50 nm; The half-height width is the width of the intrinsic spectrum of the light-emitting layer at half its height.

14. A display device, wherein: The OLED display substrate comprises the OLED display substrate according to any one of claims 1 to 13.

15. A method for manufacturing an OLED display substrate, wherein: include: providing a substrate; forming a driving circuit layer on the substrate; forming a light-emitting device on a side of the driving circuit layer away from the substrate; An optical layer is formed on the light-emitting side of the light-emitting device. The transmittance of the optical layer for light with a wavelength of 200 nanometers to 400 nanometers is lower than 70%, and the transmittance of the optical layer for light with a wavelength of 500 nanometers to 800 nanometers is higher than 85%.

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