Phosphor, optoelectronic component, and method for producing a phosphor

Abstract

The invention relates to a phosphor (1) having the general formula EA6-x-3t-r-3s-q-pSEx+3t-w-u-z+pT9-x-t-y-v-3w-z-2r-2sDx+y+3w+2rAt+v+z+2sN14-y- 3v-3u-2q+pO3+y+3v+3u+2q-p:E, where EA is an element or a combination of elements from the group of divalent elements, SE is an element or a combination of elements from the group of rare earth elements, T is an element or a combination of elements from the group of tetravalent elements, D is an element or a combination of elements from the group of trivalent elements, A is an element or a combination of elements from the group of monovalent elements, E is an element or a combination of elements from the group Ce, Eu, Mn, Tb, Dy, Er, Cr, Ni, Bi, Cu, 2*(6-x-3t-r-3s-q-p) +3*(x+3t-w-u-z+p)+4*(9-x-t-y-v-3w-z- 2r-2s)+3*(x+y+3w+2r)+1*(t+v+z+2s)-3*(14-y-3v-3u-2q+p)- 2*(3+y+3v+3u+2q-p) = 0; 0 ≤ x+3t+r+3s+q+p ≤ 6; 0 ≤ x+3t-w-u-z+p ≤ 6; 0 ≤ x+t+y+v+3w+z+2r+2s ≤ 9; 0 ≤ x+y+3w+2r ≤ 9; 0 ≤ t+v+z+2s ≤ 9; and -3 ≤ y+3v+3u+2q-p ≤ 14. The invention also relates to an optoelectronic component (10) and to a method for producing a phosphor (1).

Description

[0001] 2022PF00078 6 March 2025P2023,0898 WO N - 1 - Description PHONOSURFACE, OPTOELECTRONIC COMPONENT, METHOD FOR PRODUCING A PHONOSURFACE A phosphor and an optoelectronic component are specified. Furthermore, a method for producing a phosphor is specified. One object is to provide a phosphor with increased efficiency. Further objects are to provide a method for producing such a phosphor with increased efficiency and an optoelectronic component with increased efficiency. A phosphor is specified. According to at least one embodiment, the phosphor has the general formula EA 6-x-3t-r-3s-q-p SE x+3t-w-u-z+p T 9-x-t-y-v-3w-z-2r-2s D x+y+3w+2r A t+v+z+2s N 14-y-3v-3u- 2q+p O 3+y+3v+3u+2q-p:E on, where:- 2*(6-x-3t-r-3s-qp) +3*(x+3t-wu-z+p)+4*(9-xtyv-3w-z-2r-2s)+3*(x+y+3w+2r)+1*(t+v+z+2s)-3*(14-y-3v-3u-2q+p)- 2*(3+y+3v+3u+2q-p) = 0;- 0 ≤ x+3t+r+3s+q+p ≤ 6;- 0 ≤ x+3t-wu-z+p ≤ 6;- 0 ≤ x+t+y+v+3w+z+2r+2s ≤ 9;- 0 ≤ x+y+3w+2r ≤ 9;- 0 ≤ t+v+z+2s ≤ 9; and -3 ≤ y+3v+3u+2q-p ≤ 14. According to at least one embodiment of the phosphor, EA is an element or a combination of elements from the group of divalent elements.2022PF00078 March 6, 2025P2023,0898 WO N - 2 -The term "valence" in relation to a specific element refers to how many elements with a singly opposite charge are needed in a chemical compound to achieve charge balance. Thus, the term "valence" encompasses the element's charge number. Elements with a valence of 2 are referred to as divalent elements. Divalent elements are often doubly positively charged in chemical compounds and have a charge number of +2. Charge balance in a chemical compound can, for example, take place via two other elements that are singly negatively charged or another element that is doubly negatively charged. Preferably, EA is an element or a combination of the elements calcium, strontium, magnesium, zinc, and barium. According to at least one further embodiment of the phosphor, SE is an element or a combination of elements from the group of rare earth elements.Rare earth elements in the present case include the chemical elements of the third subgroup of the periodic table as well as the lanthanides. Rare earth elements in the present case are generally selected from the group formed by scandium, yttrium, lanthanum, cerium, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, and lutetium. According to at least one embodiment, T is an element or a combination of elements from the group of tetravalent elements. Preferably, T comprises germanium. 3 -Silicon, lead, titanium, zirconium, and tin. In particular, the phosphor is free of the element carbon. In other words, the tetravalent element is free of the element carbon. Tetravalent elements are elements with a valence of 4. Tetravalent elements are often four times positively charged in chemical compounds and have a charge number of +4. Charge balancing in a chemical compound can, for example, occur via an element that is four times negatively charged, two elements that are doubly negatively charged, or four elements that are singly negatively charged. According to at least one embodiment, D is an element or a combination of elements from the group of trivalent elements. D preferably includes boron, aluminum, gallium, indium, and thallium. Trivalent elements are elements with a valence of 3. Trivalent elements are often three times positively charged in chemical compounds and have a charge number of +3.Charge balancing in a chemical compound can occur, for example, via an element that is triply negatively charged or via three elements that are singly negatively charged. According to at least one embodiment, A is an element or a combination of elements from the group of monovalent elements. Preferably, A comprises lithium, sodium, potassium, rubidium, and cesium. 2022PF00078 March 6, 2025P2023,0898 WO N -. 4 -According to at least one embodiment, E is an element or a combination of elements from the group consisting of Ce, Eu, Mn, Tb, Dy, Er, Cr, Ni, Bi, and Cu. According to at least one embodiment of the phosphor, E is an activator element. The activator element changes the electronic structure of the host lattice in that electromagnetic radiation is absorbed by the phosphor and excites an electronic transition in the activator element, which returns to the ground state while emitting electromagnetic radiation with an emission spectrum. The activator element, which is incorporated into the host lattice, is thus responsible for the wavelength-converting properties of the phosphor.The term "wavelength-converting" in this context means that radiated electromagnetic radiation of a specific wavelength range, in this case the excitation spectrum or first wavelength range, is converted into electromagnetic radiation of another, preferably longer wavelength range, in this case the emission spectrum or second wavelength range. Typically, a wavelength-converting component absorbs electromagnetic radiation of an radiated wavelength range, converts it through electronic processes at the atomic and / or molecular level into electromagnetic radiation of another wavelength range, and re-emits the converted electromagnetic radiation. In particular, pure scattering or pure absorption is not understood as wavelength-converting in this context. 2022PF00078 March 6, 2025P2023,0898 WO N -. 5 -Here and below, phosphors are described using molecular formulas. The elements listed in the molecular formulas are present in a charged form. Here and below, elements and / or atoms in relation to the molecular formulas of the phosphors therefore refer to ions in the form of cations and anions, even if this is not explicitly stated. This also applies to element symbols, which are given without a charge number for the sake of clarity. It is possible for the given molecular formulas that the phosphor contains additional elements, for example in the form of impurities. These impurities together make up a maximum of 5 mol%, in particular a maximum of 1 mol%, preferably a maximum of 0.1 mol%. The phosphor is generally uncharged on the outside. This means that a complete charge balance between positive and negative charges can exist within the phosphor.However, it is also possible that the phosphor formally lacks complete charge balance to a small extent. Reasons for this include impurities. According to at least one embodiment, the phosphor comprises a mixture. The mixture comprises, for example, a compound with the general formula EA. 6-x-3t-r-3s-q-p SE x+3t-w-u-z+p T 9-x-t-y-v-3w-z-2r-2s D x+y+3w+2r A t+v+z+2s N 14-y-3v-3u- 2q+pO3+y+3v+3u+2q-p:E. Other components of the mixture may be, for example, reactants that did not react during the production of the phosphor, impurities and / or secondary phases that were formed during the reaction.2022PF00078 March 6, 2025P2023,0898 WO N - 6 - According to at least one embodiment, the phosphor has the general formula EA 6-x-3t-r-3s-q-p SE x+3t-w-u-z+p T 9-x-t-y-v-3w-z-2r-2sDx+y+3w+2rAt+v+z+2sN14-y-3v-3u-2q+pO3+y+3v+3u+2q-p:E, where - EA is an element or a combination of elements from the group of divalent elements, - SE is an element or a combination of elements from the group of rare earth elements, - T is an element or a combination of elements from the group of tetravalent elements, - D is an element or a combination of elements from the group of trivalent elements, - A is an element or a combination of elements from the group of monovalent elements, - E is an element or a combination of elements from the group of Ce, Eu, Mn, Tb, Dy, Er, Cr, Ni, Bi, Cu, where - 2*(6-x-3t-r-3s-qp) +3*(x+3t-wu-z+p)+4*(9-xtyv-3w-z-2r-2s)+3*(x+y+3w+2r)+1*(t+v+z+2s)-3*(14-y-3v-3u-2q+p)- 2*(3+y+3v+3u+2q-p) = 0;- 0 ≤ x+3t+r+3s+q+p ≤ 6;- 0 ≤ x+3t-wu-z+p ≤ 6;- 0 ≤ x+t+y+v+3w+z+2r+2s ≤ 9;- 0 ≤ x+y+3w+2r ≤ 9;- 0 ≤ t+v+z+2s ≤ 9; and- -3 ≤ y+3v+3u+2q-p ≤ 14.According to at least one embodiment, EA comprises calcium, strontium, and / or barium, or consists of one of these elements. According to at least one embodiment, SE comprises yttrium and / or lanthanum, or consists of one of these elements.2022PF00078 March 6, 2025P2023,0898 WO N -. 7 - According to at least one embodiment, T comprises silicon or consists of silicon. According to at least one embodiment, D comprises aluminum or consists of aluminum. According to at least one embodiment, A comprises lithium or consists of lithium. According to at least one embodiment, the phosphor has the general formula EA 6-x-3t-r-3s-q-p SE x+3t-w-u-z+pSi9-xtyv-3w-z-2r-2sAlx+y+3w+2rLit+v+z+2sN14-y-3v-3u-2q+pO3+y+3v+3u+2q-p:E, where - EA is an element or a combination of elements from the group of divalent elements, - SE is an element or a combination of elements from the group of rare earth elements, - E is an element or a combination of elements from the group of Ce, Eu, Mn, Tb, Dy, Er, Cr, Ni, Bi, Cu, where - 2*(6-x-3t-r-3s-qp) +3*(x+3t-wu-z+p)+4*(9-xtyv-3w-z-2r-2s)+3*(x+y+3w+2r)+1*(t+v+z+2s)-3*(14-y-3v-3u-2q+p)- 2*(3+y+3v+3u+2q-p) = 0;- 0 ≤ x+3t+r+3s+q+p ≤ 6;- 0 ≤ x+3t-wu-z+p ≤ 6;- 0 ≤ x+t+y+v+3w+z+2r+2s ≤ 9;- 0 ≤ x+y+3w+2r ≤ 9;- 0 ≤ t+v+z+2s ≤ 9; and -3 ≤ y+3v+3u+2q-p ≤ 14. According to at least one embodiment, E comprises cerium and / or europium or consists of one of these elements. Cerium is in particular in the form Ce 3+ Eu is present in particular in the form Eu 2+ Preferably, E stands for the element Cerium.2022PF00078 6 March 2025P2023,0898 WO N - 8 -In Eu-activated phosphors, quenching occurs even at low irradiances of around 100 mW / mm², which can lead to a reduction in quantum efficiency. Quenching here and in the following refers to the presence of processes that lead to the absorption of a photon in the first wavelength range, but without the subsequent emission of a photon in the second wavelength range or emission spectrum. The photon in the first wavelength range does not trigger a visible transition in the visible spectral range, but is converted into lattice vibrations. This leads to a reduction in efficiency. Quenching can be caused, for example, by internal conversion or energy transfer, for example, to the host lattice. Conventional applications of phosphors sometimes operate at significantly higher irradiances than 100 mW / mm². 2 . Phosphors containing Ce 3+as an activator element, show lower quenching even at higher irradiances. Therefore, the use of Ce 3+ advantageous as activator element E. An excited state of Ce 3+ has a typical lifetime of usually less than 100 nanoseconds. The typical lifetime of the excited state of Eu 2+ is typically in the range of 1 to 10 microseconds. Due to the shorter lifetime of the excited state of Ce, a phosphor with Ce as the activator element exhibits lower quenching at high irradiances. For example, the conventional phosphor Y3Al5O 12 :Ce 3+ Only above an irradiance of 10 W / mm² does significant radiation-induced quenching occur. The use of conventional orange-emitting phosphors such as (Ca,Sr,Ba)2Si5N8:Eu 2+ and (Ca,Sr)AlSiN3:Eu 2+is also limited to low irradiance levels. The optimal2022PF00078 6 March 2025P2023,0898 WO N - 9 - The application range is <1 W / mm2 irradiance, since above 1 W / mm2 the efficiency can decrease significantly. The use of orange-emitting garnet phosphors such as Tb3Al5O 12 :Ce and Gd3Al5O 12Ce is limited to low-temperature applications. According to at least one embodiment of the phosphor, E has a molecular fraction of between 0.01% and 15%, inclusive, relative to EA and SE. In other words, between 0.01% and 15%, inclusive, of the atomic positions of EA and SE are occupied by the element E. Preferably, E has a molecular fraction of between 0.01% and 5%, inclusive, relative to EA and SE. According to at least one embodiment, the phosphor has the formula EA6-3t-3s-xp-qSE3t-z+x+pT9-t-v+z-2s-x-yDx+yAt+v-z+2sN14-3v-y+p-2qO3+3v+y-p+2q:E, where- 2*(6-3t-3s-xpq)+3*(3t-z+x+p)+4*(9-t-v+z-2s-xy) +3*(x+y) + 1*(t+v-z+2s)-3*(14-3v-y+p-2q)-2*(3+3v+y-p+2q) = 0,- -6 ≤ -3t-3s-xpq ≤ 0,- 0 ≤ 3t-z+x+p ≤ 6,- -9 ≤ -t-v+z-2s-xy ≤ 0,- 0 ≤ x+y ≤ 9,- 0 < t+v-z+2s ≤ 9, and- -14 ≤ -3v-y+p-2q ≤ 3. Here, t+v-z+2s is greater than 0. This means that the phosphor contains element A.For example, the phosphor has the formula EA. 6-3t-3s-x-p-q SE 3t-z+x+p Si9-t-v+z-2s-x-yAl x+y Li t+v- z+2sN14-3v-y+p-2qO3+3v+y-p+2q:E on.2022PF00078 March 6, 2025P2023,0898 WO N - 10 - According to at least one embodiment, the phosphor has the formula EA6-3t-x-pSE3t+x+pT9-tvx-yDx+yAt+vN14-3v-y+pO3+3v+yp:E, where - 2*(6-3t-xp)+3*(3t+x+p)+4*(9-tvxy) + 3*(x+y) + 1*(t+v)-3*(14-3v-y+p)-2*(3+3v+yp) = 0, -6 ≤ -3t-xp ≤ 0, -0 ≤ 3t+x+p ≤ 6, -9 ≤ -tvxy ≤ 0, -0 ≤ x+y ≤ 9, -0 < t+v ≤ 9, and -14 ≤ -3v-y+p ≤ 3.The phosphor comprises at least one element A. For example, the phosphor has the formula EA 6-3t-x-pSE3t+x+pSi9-tvx-yAlx+yLit+vN14-3v-y+pO3+3v+yp:E. According to at least one embodiment, the phosphor has the formula EA6-3t-pSE3t+pT9-t-vAt+vN14-3v+pO3+3v-p:E, where - 2*(6-3t-p)+3*(3t+p)+4*(9-tv) + 1*(t+v)-3*(14-3v+p)-2*(3+3v-p) = 0, - 0 ≤ 3t+p ≤ 6, - 0 < t+v ≤ 9; and - -14 ≤ -3v+p ≤ 3. The phosphor comprises at least one element A. The phosphor does not comprise element D. For example, the phosphor has the formula EA 6-3t-p SE 3t+p Si 9-t-v Li t+v N 14-3v+p O 3+3v-p :E. According to at least one embodiment, the phosphor has the formula EA6T9-vAvN14-3vO3+3v:E, where - 2*(6)+4*(9-v) + 1*(v)-3*(14-3v)-2*(3+3v) = 0, and - 0 < v ≤ 4.66667. The phosphor comprises at least one element A. Furthermore, the phosphor does not comprise element SE and element D. 2022PF00078 March 6, 2025P2023,0898 WO N - 11 - For example, the phosphor has the formula EA6Si 9-v Li v N 14-3vO3+3v:E. Europium and / or cerium are preferably used as the activator element E. According to at least one embodiment, the phosphor has the formula EA6Li in another notation. a T b O c N d:E, where a + b = 9, a > 0, b > 0, c + d = 17, c > 0, d ≥ 0, a + 4b - 2c - 3d = e, and -12.5 ≤ e ≤ -11.5. Here, T is an element or a combination of elements from the group of tetravalent elements and E is an element or a combination of elements from the group Ce, Eu, Mn, Tb, Dy, Er, Cr, Ni, Bi, Cu. Preferably, T is selected from the group of silicon, germanium, titanium or zirconium. EA is an element or a combination of elements from the group of divalent elements. Preferably, EA is Ca, Sr or Ba. According to at least one embodiment, the phosphor has the formula Ca6LiaSibOcNd:E. Preferably, a+b = 9, 0 < a ≤ 4.67 and 4.33 ≤ b < 9. Furthermore, c + d = 17, where c > 0 and d ≥ 0. In addition, a+4b-2c-3d = -12. According to at least one embodiment, the phosphor has the formula EA6-x-3t-r-3s-q-pSEx+3t-wu-z+pT9-xtyv-3w-z-2r-2sDx+y+3w+2rAt+v+z+2sN14-y-3v-3u-2q+pO3+y+3v+3u+2q-p:E, where 2022PF00078 March 6, 2025P2023,0898 WO N -12 - - 2*(6-x-3t-r-3s-qp) +3*(x+3t-wu-z+p)+4*(9-xtyv-3w-z-2r-2s)+3*(x+y+3w+2r)+1*(t+v+z+2s)-3*(14-y-3v-3u-2q+p)- 2*(3+y+3v+3u+2q-p) = 0,- 3 < x+3t+r+3s+q+p ≤ 6,- 3 < x+3t-wu-z+p ≤ 6,- 0 ≤ x+t+y+v+3w+z+2r+2s ≤ 9,- 0 ≤ x+y+3w+2r ≤ 9,- 0 ≤ t+v+z+2s ≤ 9, and -3 ≤ y+3v+3u+2q-p ≤ 14. Here, SE is greater than three. For example, the phosphor has the formula EA 6-x-3t-r-3s-q-p SE x+3t-w-u-z+p Si9-xyv-3w-z-2r-2sAlx+y+3w+2rLit+v+z+2sN14-y-3v-3u-2q+pO3+y+3v+3u+2q-p:E. According to at least one embodiment, the phosphor has the formula EA6-xrq-pSEx-w-u+pT9-xy-3w-2rDx+y+3w+2rN14-y-3u-2q+pO3+y+3u+2q-p:E, where - 2*(6-xrqp) + 3*(xw-u+p) + 4*(9-xy-3w-2r) + 3*(x+y+3w+2r) - 3*(14-y-3u-2q+p) - 2*(3+y+3u+2q-p) = 0.- 3 < x+r+q+p ≤ 6,- 3 < xw-u+p ≤ 6,- 0 ≤ x+y+3w+2r ≤ 9, and- -3 ≤ y+3u+2q-p ≤ 14. In this embodiment, the phosphor does not contain element A and the proportion of SE is greater than 3. For example, the phosphor has the formula EA 6-x-r-q-p SE x-w-u+p Si9-x-y-3w- 2rAlx+y+3w+2rN14-y-3u-2q+pO3+y+3u+2q-p:E. According to at least one embodiment, the phosphor has the formula EA6-x-pSEx+pT9-x-yDx+yN14-y+pO3+yp:E, where - 2*(6-xp) + 3*(x+p) + 4*(9-xy) + 3*(x+y) - 3*(14-y+p) - 2*(3+yp) = 0, - 3 < x+p ≤ 6, - 0 ≤ x+y ≤ 9, and 2022PF00078 March 6, 2025P2023,0898 WO N - 13 - - -3 ≤ yp ≤ 14. In this embodiment, the phosphor does not contain element A and the proportion of SE is greater than 3. For example, the phosphor has the formula EA 6-x-p SE x+p Si 9-x-y Al x+y N 14-y+p O 3+y- p:E. According to at least one embodiment, the phosphor can convert blue to red primary radiation into secondary radiation in the yellow to deep red spectral range. According to at least one embodiment, the phosphor has a host lattice comprising a structure with a cubic space group. In particular, the phosphor comprises a crystalline, for example, ceramic, host lattice. The phosphor is, for example, a ceramic material. The crystalline host lattice is generally composed in particular of a three-dimensionally periodically repeating unit cell. In other words, the unit cell is the smallest recurring unit of the crystalline host lattice, reflecting the symmetry of the crystal. The elements EA, SE, T, D, A, N, O, and E each preferably occupy defined, symmetrical positions, so-called point positions, within the three-dimensional unit cell of the host lattice.To describe the three-dimensional unit cell of the crystalline host lattice, six lattice parameters are required: three lengths a, b, and c, and three angles α, β, and γ. The three lattice parameters a, b, and c are the lengths of the lattice vectors that span the unit cell. The other three lattice parameters α, β, and γ are the angles 2022PF00078 March 6, 2025P2023,0898 WO N -. 14 - between these lattice vectors. α is the angle between b and c, β is the angle between a and c, and γ is the angle between a and b. According to at least one further embodiment, the phosphor crystallizes in the cubic space group P-43m. This corresponds to the number 215. This structure is isotypic to the compounds Ca3Sm3[Si9N 17 ] and Ca3Yb3[Si9N 17 ].For example, according to one embodiment, a single-crystal structure solution based on a single crystal for the phosphor Ca6Si 9-v Li v N 14-3v O 3+3v:E a cell with a cubic metric with the lattice parameters a = 7.382(1) Å and a cell volume of 402.2(1) Å3. The unit cell is preferably composed of one formula unit and thus of 32 atoms. According to at least one embodiment, a crystal structure of the host lattice of the phosphor comprises corner-sharing (T,D,A)(N,O)4 tetrahedra. The (T,D,A)(N,O)4 tetrahedra are preferably (Si,Al)(O,N) tetrahedra or (Li,Si)(O,N) tetrahedra. These tetrahedra are linked to one another via shared corners. In particular, the crystal structure of the host lattice of the phosphor is a framework silicate or belongs to the group of framework silicates. For example, the crystal structure consists exclusively of (T,D,A)(N,O)4 tetrahedra sharing corners. The (T,D,A)(N,O)4 tetrahedra typically have a tetrahedral vacancy. The tetrahedral vacancy is a region within the respective tetrahedron.For example, the term “tetrahedral gap” refers to the area inside the2022PF00078 March 6, 2025P2023,0898 WO N -. 15 -Tetrahedron that remains free when touching spheres are placed at the corners of the tetrahedron. Preferably, the N or O atoms span the (T,D,A)(N,O)4 tetrahedron, with the T,D,A atom, preferably the Si, Li, or Al atom, located in the tetrahedral gap of the (T,D,A)(N,O)4 tetrahedron spanned by the N or O atoms. In other words, the N or O atoms are arranged tetrahedrally around the T,D,A atom. In particular, all atoms that span the tetrahedron have a similar distance to the T,D,A atom located in the tetrahedral gap. Corner-sharing means that at least two of the (T,D,A)(N,O)4 tetrahedra are connected to each other via an N,O vertex. The two (T,D,A)(N,O)4 tetrahedra are corner-sharing. Preferably, the N or O atom is a common N or O atom of the corner-sharing (T,D,A)(N,O)4 tetrahedra.In other words, the N or O atom that links the (T,D,A)(N,O)4 tetrahedra to one another is preferably part of both the (T,D,A)(N,O)4 tetrahedron and another (T,D,A)(N,O)4 tetrahedron. For example, all four corners are each linked to a corner of another (T,D,A)(N,O)4 tetrahedron. The corner-sharing (T,D,A)(N,O)4 tetrahedra form a tetrahedral network. According to at least one embodiment, the crystal structure of the host lattice of the phosphor has a first motif comprising four (T,D,A)(N,O)4 tetrahedra that are corner-sharing via exactly one common N or O atom. In other words, this means that the (T,D,A)(N,O)4 tetrahedra are corner-shared via either an N atom or an O atom, which is common to all four (T,D,A)(N,O)4 tetrahedra.2022PF00078 March 6, 2025P2023,0898 WO N -. 16 -This, in particular, forms a star-shaped motif. According to at least one further embodiment, the crystal structure of the host lattice of the phosphor has a second motif comprising five (T,D,A)(N,O)4 tetrahedra, with exactly one (T,D,A)(N,O)4 tetrahedron being linked by corner sharing to the four further (T,D,A)(N,O)4 tetrahedra. The (T,D,A)(N,O)4 tetrahedron, which is connected to four further (T,D,A)(N,O)4 tetrahedra, is a central (T,D,A)(N,O)4 tetrahedron and is thus surrounded by four further (T,D,A)(N,O)4 tetrahedra. According to at least one further embodiment, the first motif and the second motif are connected to one another via common corners and form a framework structure. The framework structure is, in particular, a three-dimensional network. In particular, four units of the second motif and one unit of the first motif form a framework structure. For example, the first motif is centered and surrounded by four additional second motifs.Here, at least one corner of a (T,D,A)(N,O)4 tetrahedron of the second motif is linked to the corner of a (T,D,A)(N,O)4 tetrahedron of the first motif. According to at least one embodiment, the framework structure contains two crystallographically different layers that are partially and / or fully occupied with EA elements and SE elements. For example, the framework structure contains two crystallographically different calcium layers. The calcium CaO1 is fully occupied and CaO2 is half occupied. CaO1 is eight-fold coordinated by N or O atoms, and CaO2 is four-fold coordinated by N or O atoms. 2022PF00078 March 6, 2025P2023,0898 WO N -. 17 -According to the embodiment of the phosphor with the formula Ca6-xrq-pYx-w-u+pSi9-xy-3w-2rAlx+y+3w+2rN14-y-3u-2q+pO3+y+3u+2q-p:Ce, CaO1 / YO1 is fully occupied and CaO2 / YO2 is half occupied. CaO1 / YO1 is eight-coordinated by N or O atoms, and CaO2 / YO2 is four-coordinated by N or O atoms. Mixed occupation of both crystallographic layers is possible with yttrium and calcium. Mixed occupation of the two N layers N006 and N008 by N and O is also possible. The N007 layer is four-coordinated and is therefore exclusively occupied by N atoms. Furthermore, a mixed occupation of all silicon layers with Al is possible. According to one embodiment of the phosphor of the formula Ba6-xrq-pLax-w-u+pSi9-xy-3w-2rAlx+y+3w+2rN14-y-3u-2q+pO3+y+3u+2q-p:Ce, BaO1 / LaO1 is not fully occupied and / or BaO2 / LaO2 is not half occupied, but the layers have a smaller occupation factor. This means that one or both layers are underoccupied.Charge compensation can be achieved via substitutions in the silicate framework, e.g., by replacing Si with Al or N with O. According to at least one embodiment, the phosphor absorbs electromagnetic radiation in the near-ultraviolet to blue and red spectral range. According to at least one embodiment, the phosphor is excitable between 400 nanometers and 650 nanometers inclusive. Preferably, the phosphor is excitable below 580 nm, particularly preferably between 520 nanometers and 580 nanometers inclusive. Other wavelengths for exciting the phosphor are conceivable. 2022PF00078 March 6, 2025P2023,0898 WO N -. 18 -According to at least one embodiment of the phosphor, the phosphor emits electromagnetic radiation. The emitted electromagnetic radiation can be described in the form of an emission spectrum. The emission spectrum has an emission peak with an emission maximum lying between 560 nm and 630 nm inclusive. For example, the emission maximum of the phosphor with excitation at 448 nm is between 578 nm and 602 nm. The emission spectrum is the intensity distribution of the electromagnetic radiation emitted by the phosphor after excitation with electromagnetic radiation of the first wavelength range.Typically, the emission spectrum is represented in the form of a diagram in which a spectral intensity or a spectral radiant flux per wavelength interval ("spectral intensity / spectral radiant flux") of the electromagnetic radiation emitted by the phosphor is plotted as a function of the wavelength λ. In other words, the emission spectrum represents a curve in which the wavelength is plotted on the x-axis and the spectral intensity or the spectral radiant flux is plotted on the y-axis. According to at least one further embodiment, a dominant wavelength (λ dom ) of the electromagnetic radiation emitted by the phosphor between 550 nm and 650 nm inclusive. According to at least one further embodiment, a dominant wavelength (λ dom ) of the phosphor2022PF00078 6 March 2025P2023,0898 WO N - 19 -emitted electromagnetic radiation at an excitation wavelength of 440 nm or 448 nm between 570 nm and 600 nm inclusive. According to at least one further embodiment, a dominant wavelength (λ dom) of the electromagnetic radiation emitted by the phosphor at an excitation wavelength of 520 nm between 595 nm and 605 nm inclusive. According to at least one embodiment, the dominant wavelength is advantageously in the orange to red wavelength range. To determine the dominant wavelength of the electromagnetic radiation emitted by the phosphor, a straight line is drawn in the CIE standard diagram, starting from the white point through the color location of the electromagnetic radiation. The intersection point of the straight line with the spectral color line delimiting the CIE standard diagram designates the dominant wavelength of the electromagnetic radiation. In other words, the dominant wavelength is the monochromatic wavelength that produces the same color impression as a polychromatic light source. The dominant wavelength is therefore the wavelength perceived by the human eye.In general, the dominant wavelength deviates from the wavelength of the emission maximum. According to at least one preferred embodiment, the half-width of the electromagnetic radiation emitted by the phosphor is between 80 nm and 200 nm inclusive. Preferably, the half-width of the electromagnetic radiation emitted by the phosphor is 2022PF00078 March 6, 2025P2023,0898 WO N -. 20 -electromagnetic radiation when the host lattice is doped with Eu has a range from 80 to 100 nm inclusive, preferably from 85 nm to 95 nm inclusive. The half-width of the electromagnetic radiation emitted by the phosphor when the host lattice is doped with Ce preferably has a range from 110 to 160 nm inclusive, preferably from 125 nm to 155 nm inclusive. The term “half-width” refers to a curve with a maximum, such as the emission spectrum, where the half-width is the width of that region on the x-axis which corresponds to the two y-values ​​which correspond to half the maximum. Furthermore, an optoelectronic component is specified. The phosphor is particularly suitable and intended for use in an optoelectronic component.Features and embodiments that are implemented solely in connection with the phosphor and / or the method can also be implemented in the optoelectronic component, and vice versa. According to at least one embodiment of the optoelectronic component, the optoelectronic component comprises a semiconductor chip that, during operation, emits electromagnetic radiation of a first wavelength range from a radiation exit surface. The semiconductor chip is, for example, a light-emitting diode chip or a laser diode chip.2022PF00078 March 6, 2025P2023,0898 WO N -. 21 -The semiconductor chip preferably has an epitaxially grown semiconductor layer sequence with an active zone configured to generate electromagnetic radiation. For this purpose, the active zone has, for example, a pn junction, a double heterostructure, a single quantum well, or particularly preferably a multiple quantum well structure. During operation, the semiconductor chip preferably emits electromagnetic radiation from the ultraviolet spectral range and / or from the visible spectral range, particularly preferably from the blue spectral range. According to a further embodiment, the optoelectronic component has a conversion element with a phosphor described here, which converts electromagnetic radiation of the first wavelength range into electromagnetic radiation of the emission spectrum. The first wavelength range preferably lies entirely or partially in the range of the excitation spectrum of the phosphor.The phosphor completely or partially converts electromagnetic radiation of the first wavelength range into electromagnetic radiation of the emission spectrum. The conversion element comprises, for example, in addition to the phosphor described here, a matrix material in which the phosphor is embedded in the form of particles. The matrix material is preferably selected from the group of silicones, polysiloxanes, epoxies, glasses, and hybrid materials. For example, a further phosphor is embedded in the matrix material. The further phosphor is, for example, a garnet phosphor or a nitride 2022PF00078 March 6, 2025P2023,0898 WO N -. 22 -Phosphor. The further phosphor is preferably a green or yellow-emitting phosphor. According to at least one embodiment, the conversion element consists of the phosphor described here. For example, the phosphor is formed as a ceramic. For example, the conversion element only partially converts the electromagnetic radiation of the semiconductor chip into electromagnetic radiation of the emission spectrum, while a further portion of the electromagnetic radiation of the semiconductor chip is transmitted by the conversion element. In this case, the optoelectronic component preferably emits mixed light composed of electromagnetic radiation of the first wavelength range and electromagnetic radiation of the emission spectrum. For example, the electromagnetic component emits white light.The optoelectronic component is particularly suitable for use in backlights for screens and in white-light LEDs for general lighting. These optoelectronic components are also used, for example, in automotive direction indicators due to their full conversion to orange LEDs. The phosphor can be advantageous for all applications where, in addition to brightness, a slight orange and / or red component is important, for example, lighting solutions for general lighting or automotive headlights. Furthermore, these optoelectronic components are used for use at higher irradiances due to their low flux quenching. The optoelectronic component 2022PF00078 March 6, 2025 P2023,0898 WO N -. 23 -can also be used in combination with the present phosphor alone to generate warm white light. Furthermore, the optoelectronic component can generate various light forms with a color rendering index CRI > 70 in phosphor mixtures without the use of Eu-doped phosphors. The optoelectronic component can also be used for horticulture applications. For horticulture applications, for example, phosphors for the 610-700 nm range are required, as they can be helpful for the phototropism of the plant. Red semiconductor LEDs (single emitters) are typically used for horticulture applications. The emission of single emitters is usually very narrow, and the position of the maximum is temperature-dependent, usually with deviations of ±5 nm. These circumstances have a negative impact on efficiency / performance.According to at least one embodiment, the conversion element comprises at least one further phosphor that converts electromagnetic radiation of the first wavelength range into electromagnetic radiation of a further wavelength range. This means, for example, that the further phosphor is also embedded in the same conversion element as the first phosphor. Alternatively, the further phosphor can also be arranged in a further conversion element located above or below the conversion element. The further phosphor preferably converts electromagnetic radiation of the first wavelength range into electromagnetic radiation of the third wavelength range, which differs from the emission spectrum 2022PF00078 March 6, 2025P2023,0898 WO N -. 24 -of the present phosphor. In particular, the further phosphor emits green and / or yellow light. The phosphor can be produced using the method described below. Features and embodiments that are only implemented in connection with the phosphor and the optoelectronic component can also be implemented in the method, and vice versa. According to at least one embodiment of the method for producing a phosphor having the general formula EA 6-x-3t-r-3s-q-p SE x+3t-w-u-z+p T 9-x-t-y-v-3w-z-2r-2s D x+y+3w+2r A t+v+z+2s N 14-y-3v-3u-2q+pO3+y+3v+3u+2q-p:E, where - EA is an element or a combination of elements from the group of divalent elements, - SE is an element or a combination of elements from the group of rare earth elements, - T is an element or a combination of elements from the group of tetravalent elements, - D is an element or a combination of elements from the group of trivalent elements, - A is an element or a combination of elements from the group of monovalent elements, - E is an element or a combination of elements from the group of Ce, Eu, Mn, Tb, Dy, Er, Cr, Ni, Bi, Cu, - 2*(6-x-3t-r-3s-qp) +3*(x+3t-wu-z+p)+4*(9-xtyv-3w-z-2r-2s)+3*(x+y+3w+2r)+1*(t+v+z+2s)-3*(14-y-3v-3u-2q+p)- 2*(3+y+3v+3u+2q-p) = 0;- 0 ≤ x+3t+r+3s+q+p ≤ 6;- 0 ≤ x+3t-wu-z+p ≤ 6;- 0 ≤ x+t+y+v+3w+z+2r+2s ≤ 9;- 0 ≤ x+y+3w+2r ≤ 9;2022PF00078 March 6th 2025P2023.0898 WO N - 25 -- 0 ≤ t+v+z+2s ≤ 9; and - -3 ≤ y+3v+3u+2q-p ≤ 14, the process comprises the steps of - providing a composition of reactants, - homogenizing the reactants to produce a reaction mixture, and - heating the reaction mixture to a temperature between 800 °C and 2200 °C inclusive. According to at least one embodiment of the process, in a first step of the process, a reactant composition, which may be stoichiometric or non-stoichiometric, is homogenized. Preferably, the reactants are intimately mixed in a glove box under a protective gas atmosphere. This can be done, for example, in a hand mortar, a mortar mill, a ball mill, a multi-axis mixer, or the like. According to one embodiment of the process, the resulting reaction mixture of the reactants is transferred into a crucible. The crucible can contain, for example, nickel, corundum, tungsten, molybdenum or tantalum.According to at least one embodiment, the reaction mixture is heated in a further step to a temperature between 800°C and 2200°C inclusive, preferably between 850°C and 2100°C inclusive, particularly preferably between 900°C and 2000°C. The temperature is maintained for 0.5 hours up to and including 100 hours, preferably for 1 hour up to and including 80 hours, particularly preferably between 2 hours and 60 hours. The heating takes place under a nitrogen atmosphere or a reducing atmosphere, for example forming gas, at atmospheric or elevated pressure. 2022PF00078 March 6, 2025P2023,0898 WO N -. 26 -The forming gas atmosphere / synthesis gas atmosphere comprises, for example, a mixture of nitrogen or argon with up to 100% hydrogen or is formed from such a mixture. According to at least one embodiment, the reaction mixture is heated at a pressure between 2 bar and 100 bar, preferably between 5 bar and 50 bar, particularly preferably between 10 bar and 40 bar. After the reaction has taken place and the product has cooled, the product is ground in a hand mortar. This can be done, for example, in a hand mortar, a mortar mill, or a ball mill. In particular, the product is washed with 2 molar hydrochloric acid. This advantageously increases the phase fraction. According to at least one embodiment, the reaction takes place at high temperatures for 48 hours and at an N2 overpressure.The synthesis temperatures are between 800°C and 1100°C, preferably between 850°C and 1050°C, particularly preferably between 900 and 1000°C. The pressure range is between 20 and 100 bar, preferably between 40 and 90 bar, particularly preferably between 75 and 85 bar. According to at least one embodiment, the reaction takes place at high temperatures for 0.5 hours to 24 hours, preferably for 1 hour to 12 hours, particularly preferably between 2 hours to 6 hours under N2 or reducing conditions. Typical synthesis temperatures are between 1600°C and 2200°C, preferably between 1750°C and 2100°C, particularly preferably between 1850°C and 2000°C. Additionally, 2022PF00078 March 6, 2025 P2023,0898 WO N -. 27 -an overpressure of 5 bar to 100 bar, preferably from 10 bar to 50 bar, particularly preferably from 15 bar to 40 bar, can be used. For example, the temperature is between 1850 °C and 2000 °C inclusive, the overpressure is 20 bar, and the holding time is 4 hours in an N2 atmosphere. According to at least one embodiment, the reactants are selected from a group comprising nitrides, oxides, nitrates, citrates, oxalates, halides, carbonates, hydroxides of each of EA, SE, T, D, A, E, and combinations thereof. According to at least one embodiment, the reactants are selected from the following group: yttrium compound, lanthanum compound, calcium compound, barium compound, strontium compound, silicon compound, cerium compound, aluminum compound, lithium compound, europium compound, and combinations thereof.According to at least one embodiment, the reactants are selected from the following group: YN, Ca3N2, LaN, SiO2, BaN1-α (α is between -0.5 and 0.5 inclusive), Si3N4, AlN and CeO. 2, CeN, CeF3, Li3N, EuF3, and combinations thereof. The activator content is 0.01 mol% to 10 mol%, preferably 0.1 mol% to 5 mol% with respect to calcium or Ba and La, or Ca and La, or Ca and Y. One idea for the present phosphor is to use it as a narrow-band orange emitter. At higher irradiances, efficient cerium- or Eu-based phosphors that convert in the orange spectral range are not currently in use. Therefore, cerium-based phosphors are used. 28 -Conversion phosphors in this spectral range are urgently needed and can contribute to more efficient and thus more cost-effective solutions for the application. The phosphor can therefore be advantageous for a wide variety of applications where, in addition to brightness, a slight red component is important, for example, in lighting solutions for general lighting, automotive headlights, or direction indicators. Using the phosphor, it is possible to realize pure Cerium-activated CRI (color rendering index) 70 solutions at common color temperatures without the use of an Eu-activated phosphor. This enables the use of the phosphor mixtures at higher irradiances, where Eu-activated phosphors tend to exhibit strong quenching effects. It is also possible to realize a fluorescent solution for direction indicators without an Eu2+-activated phosphor using the phosphor.A further advantage of the phosphor is an improvement in the color locus shift in a phosphor solution in which only Ce-doped or Eu-doped phosphors are used. Since Eu- and Ce-doped phosphors often exhibit different quenching behavior, temperature changes, for example, lead to significantly different quenching and thus to significant changes, for example, in the color locus of the application. The use of phosphors with the same activator can therefore reduce this problem. Further advantageous embodiments and developments of the phosphor, the optoelectronic component, and the method emerge from the following exemplary embodiments described in conjunction with the figures. 2022PF00078 March 6, 2025P2023,0898 WO N -. 29 -Figures 1, 2, 3, 4 and 5 each show a schematic section of a crystal structure of a host lattice of a phosphor according to an embodiment, Figure 6 shows an emission spectrum of a phosphor of the formula Ca6Si 9-v Li v N 14-3v O 3+3v :Eu 2+ according to an embodiment, Figure 7 shows an emission spectrum of a phosphor of the formula Ca6Si 9-v Li v N 14-3v O 3+3v :Ce 3+ according to an embodiment, Figure 8 emission spectra of a phosphor of the formula Ca 6-x-r-q-p Y x-w-u+p Si9-xy-3w-2rAl x+y+3w+2r N 14-y-3u-2q+p O 3+y+3u+2q-p :Ce 3+ with different Y / Ca ratios according to an embodiment and a comparative example, Figure 9 emission spectra, shown on an energy scale of a phosphor of the formula Ca 6-x-r-q-p Y x-w-u+p Si 9- x-y-3w-2r Al x+y+3w+2r N 14-y-3u-2q+p O 3+y+3u+2q-p :Ce 3+with different Y / Ca ratios according to an embodiment and a comparative example, Figure 10 Emission spectra of a phosphor of the formula Ca 6-x-r-q-p Y x-w-u+p Si9-xy-3w-2rAl x+y+3w+2r N 14-y-3u-2q+p O 3+y+3u+2q-p :Ce 3+ according to an embodiment and a comparative example, Figure 11 Excitation spectrum of a phosphor of the formula Ca 6-x-r-q-p Y x-w-u+p Si9-xy-3w-2rAl x+y+3w+2r N 14-y-3u-2q+p O 3+y+3u+2q-p :Ce 3+ according to an embodiment,2022PF00078 March 6, 2025P2023,0898 WO N - 30 - Figure 12 Emission spectra of a phosphor of the formula according to an embodiment and a comparative example, Figures 13, 14 and 15 each show a schematic sectional view of an optoelectronic component according to an embodiment, Figure 16 shows simulated LED emission spectra with the phosphor Ca6Si 9-v Li v N 14-3vO3+3v :Eu 2+according to an exemplary embodiment and with a comparative example, Figures 17, 18, 19, 20 and 21 each show simulated LED emission spectra with phosphor solutions containing the phosphor according to an exemplary embodiment and phosphor solutions according to a comparative example, respectively, and Figure 22 shows a schematic sectional view of various process stages of a process for producing a phosphor according to an exemplary embodiment. Identical, similar, or similarly acting elements are provided with the same reference numerals in the figures. The figures and the relative sizes of the elements shown in the figures are not to be considered to scale. Rather, individual elements, in particular layer thicknesses, may be exaggerated for clarity and / or better understanding. The phosphor 1 according to an exemplary embodiment is in the form of particles.For example, the particles have a grain size between 0.05 micrometers and 100 micrometers (not explicitly shown).2022PF00078 March 6, 2025P2023,0898 WO N -. 31 - The phosphor 1 according to the embodiment of Figure 1 obeys the formula EA6-x-3t-r-3s-q-pSEx+3t-wu-z+pT9-xtyv-3w-z-2r- 2s D x+y+3w+2r A t+v+z+2s N 14-y-3v-3u-2q+p O 3+y+3v+3u+2q-p :E. In particular, the phosphor 1 obeys one of the molecular formulas EA6-3t-3s-xp-qSE3t-z+x+pT9-t-v+z-2s-x-yDx+yAt+v-z+2sN14-3v-y+p- 2q O 3+3v+y-p+2q :E, EA 6-3t-x-p SE 3t+x+p T 9-t-v-x-y D x+y A t+v N 14-3v-y+p O 3+3v+y-p :E, EA 6- 3t-p SE 3t+p T 9-t-v A t+v N 14-3v+p O 3+3v-p :E, EA6T 9-v A v N 14-3v O 3+3v :E, Ca6Si 9-v Li v N 14- 2r D x+y+3w+2r N 14-y-3u-2q+p O 3+y+3u+2q-p :E , EA 6-x-p SE x+p T9-x-y D x+y N 14-y+p O 3+y-p :E, Ca 6-x-r-q-p Y x-w-u+p Si9-x-y-3w-2rAl x+y+3w+2r N 14-y-3u-2q+p O 3+y+3u+2q-p :Ce 3+ , (Ca,Ba) 6-x-r-q-p La x-w-u+p Si9-x-y-3w-2rAl x+y+3w+2r N 14-y-3u-2q+p O 3+y+3u+2q-p :Ce 3+The host lattice comprises a structure with a cubic space group. The phosphor 1 crystallizes in the cubic space group P-43m. The phosphor 1 can be described in this space group or any subgroup derived from it. The crystal structure of the host lattice of the phosphor 1 comprises corner-sharing (T,D,A)(N,O)4 tetrahedra 2. The (T,D,A)(N,O)4 tetrahedron 2 is, for example, a Si(O,N)4 tetrahedron, a Li(O,N)4 tetrahedron, or an Al(O,N)4 tetrahedron. The crystal structure of the host lattice of the phosphor 1 further exhibits a first motif 3, shown on the left in Figure 1. The first motif 3 comprises four (T,D,A)(N,O)4 tetrahedra 2, which are vertex-linked via exactly one common N or O atom 4. A star-shaped configuration is formed. In other words, the four (T,D,A)(N,O)4 tetrahedra 2 form a common N or O atom in the center, which is common to all four (T,D,A)(N,O)4 tetrahedra 2.The crystal structure of the host lattice of the phosphor 1 exhibits a second motif 5. The second motif 5 comprises2022PF00078 March 6, 2025P2023,0898 WO N -. 32 - five (T,D,A)(N,O)4-tetrahedra 2, where exactly one (T,D,A)(N,O)4-tetrahedra 2 is linked by corner sharing with the four other (T,D,A)(N,O)4-tetrahedra 2. This means that one of the five (T,D,A)(N,O)4-tetrahedra 2 is located in the center of the second motif 5, right-hand illustration of Figure 1. The first motif 3 and the second motif 5 are connected to each other via common corners and form a framework structure 17. The first motif 3 is shown in Figure 1 at the top left, the second motif is in Figure 1 at the top right, and the framework structure 17 is an interplay of the first motif 3 and four units of the second motif 5. Figure 2 shows a schematic section of a crystal structure of a host lattice of a phosphor 1, in this case EA. 6-3t-3s-x-p-q SE 3t-z+x+p T 9-t-v+z-2s-x-y D x+y A t+v-z+2sN 14-3v-y+p- 2q You 3+3v+y-p+2q :Yes, YES 6-3t-x-p THIS 3t+x+p T 9-t-v-x-y D x+y A t+v N 14-3v-y+p You 3+3v+y-p :Yes, YES 6- 3t-p THIS 3t+p T 9-t-v A t+v N 14-3v+p You 3+3v-p :Yes, EA6T 9-v A v N 14-3v You 3+3v :Yes, Ca6Si 9-v These v N 14- 3vO3+3v:E, EA6LiaTbOcNd:E, Ca6LiaSibOcNd:E, EA6-xrq-pSEx-w-u+pT9-xy-3w- 2r D x+y+3w+2r N 14-y-3u-2q+p You 3+y+3u+2q-p :Yes , YES 6-x-p THIS x+p T 9-x-y D x+y N 14-y+p You 3+y-p :Yes, Ca 6-x-r-q-p Yes x-w-u+p Si9-xy-3w-2rAl x+y+3w+2r N 14-y-3u-2q+p You 3+y+3u+2q-p :Yes 3+ or (Ca,Ba) 6-x-r-q-p The x-w-u+p Si9-xy-3w-2rAl x+y+3w+2r N 14-y-3u-2q+p You 3+y+3u+2q-p :Yes 3+according to an embodiment. Figure 2 shows the first motif 3 and the second motif 5, which together form a framework structure 17. The two motifs are thus connected to each other, creating a three-dimensional network. The linking occurs here via common corners. Figure 3 shows a section of the crystal structure of the phosphor 1 according to an embodiment. The phosphor 1 obeys the formula EA 6-x-3t-r-3s-q-p SE x+3t-w-u-z+p T 9-x-t- yv-3w-z-2r-2sD x+y+3w+2r A t+v+z+2s N 14-y-3v-3u-2q+p O 3+y+3v+3u+2q-p :E, present Ca6Si9-vLivN14-3vO3+3v:E. Between two units of the second motif 5 there are gaps in which the elements 2022PF00078 6 March 2025P2023,0898 WO N - 33 -EA and / or SE. In other words, Figure 3 shows a three-dimensional network spanned by (T,D,A)(N,O)4 tetrahedra 2, in which the crystallographically different heavy atom layers are located. The EA atoms, in this case calcium, occupy these layers. One layer of Ca atoms is fully occupied 6, and the other layer of Ca atoms is half occupied 7. CaO1 is eight-fold coordinated by, for example, O,N atoms, and CaO2 is four-fold coordinated by O,N atoms. Mixed occupancy of both layers is possible with all elements EA and SE, preferably yttrium and calcium. Between the (T,D,A)(N,O)4 tetrahedra 2 are gaps in which the EA / SE atoms 8 are located. Figure 4 shows the crystal structure of the phosphor 1EA. 6-x-3t-r-3s-q-p SE x+3t-w-u-z+p T 9-x-t-y-v-3w-z-2r-2s D x+y+3w+2r A t+v+z+2s N 14-y-3v-3u-2q+pO3+y+3v+3u+2q-p:E, for example, Ca6Si9-vLivN14-3vO3+3v:E, is shown according to an embodiment. Here, too, there are corner-sharing (T,D,A)(N,O)4 tetrahedra 2, for example, (Li,Si)(N,O)4 tetrahedra, which are constructed via a first motif 3 and a second motif 5. Between the (T,D,A)(N,O)4 tetrahedra 2 are gaps in which the EA and / or SE atoms 8 are located. The gaps can have half- or fully occupied EA and / or SE positions (6 / 7) or even lower occupancies. For example, between two (T,D,A)(N,O)4-tetrahedra 2, which are not connected via corners but are merely adjacent, there are two half-occupied 7 EA and / or SE atomic layers 8. Figure 5 also shows the crystal structure of the phosphor 1, in this case Ca6-xrq-pYx-w-u+pSi9-xy-3w-2rAlx+y+3w+2rN14- y-3u-2q+p O 3+y+3u+2q-p :Ce 3+ or (Ca,Ba) 6-x-r-q-p La x-w-u+p Si 9-x-y-3w- 2022PF00078 6 March 2025P2023,0898 WO N - 34 -2r Al x+y+3w+2r N 14-y-3u-2q+p O 3+y+3u+2q-p :Ce 3+ , according to an exemplary embodiment. In the three-dimensional network spanning (Si,Al)(O,N)4 tetrahedra 2, there are two crystallographically different heavy atom layers occupied by rare earth and alkaline earth atoms, i.e., in this case, by Y,La and Ca,Ba. CaO1,YO1 is fully occupied and CaO2,YO2 is half occupied. CaO1,YO1 is eight-fold coordinated, and YO2 four-fold coordinated by O,N atoms. Ca,YO1 or Ca,YO2 can also be a Ca-La layer or a Ba-La layer. The N007 layer is four-fold bridging and is therefore occupied exclusively by N atoms. Furthermore, a mixed occupation of all Si layers with Al and / or Li is possible. Figure 5 is a comparable representation to Figure 3. In the middle of the second motif 5 there is a full occupation 6 of the EA, SE atoms 8. The structure of the phosphor 1 EA 6-x-3t-r-3s-q-p SE x+3t-w-u-z+p T 9-x-t-y-v-3w-z-2r-2sDx+y+3w+2rAt+v+z+2sN14-y-3v-3u-2q+pO3+y+3v+3u+2q-p:E was determined from several single crystals using single-crystal X-ray diffraction. The lattice parameters, crystallographic data, and the basic quality parameters of the X-ray determination are listed in Table 1 for the phosphor 1 Ca6Si. 9- v Li v N 14-3v O 3+3v :E, Ca 6-x-r-q-p Y x-w-u+p Si9-xy-3w-2rAl x+y+3w+2r N 14-y-3u- 2q+pO3+y+3u+2q-p:E and Ca6-xrq-pLax-w-u+pSi9-xy-3w-2rAlx+y+3w+2rN14-y-3u-2q+pO3+y+3u+2q-p:E are summarized below. The preparation and exact composition of working examples 21, 5, and 11 are explained below. The phase Ca 6-x-r-q-p La x-w-u+p Si 9-x-y-3w- 2r Al x+y+3w+2r N 14-y-3u-2q+p O 3+y+3u+2q-p :Ce 3+In Example 11, it was found mixed with other phases. At least one variant of the phase according to the invention was identified. This has a lattice parameter a = 7.55 Å. For a crystal of this variant, it was possible to use 2022PF00078 6 March 2025P2023,0898 WO N - 35 - X-ray diffraction studies determine the structure and exact composition. Here, u ≈ 0 and x < 0.5. The unit cell consists of one formula unit and thus of 32 atoms. In phosphor 1, mixed A and T positions exist instead of pure T positions. Execution 21 5 11 example S ummenformel CaSi LiN Ca Y Si Al Ca La Si :Eu N :Ce Al N :Ce Crystal system cubicSpace group P-43m (No. 215)a / Å 7.382(1) 7.3346(3) 7.5459(3)Cell volume / 402.3(1) 394.57(5) 429.67(5)Å T / K 296(2)Radiation Cu-Kα (λ = 1.542 Å)Measurement range 6.0 < θ < 72.1 6.0 < θ < 72.1 5.9 < θ < 71.3−9 ≤ h ≤ 8 −7 ≤ h ≤ 8 -9 ≤ h ≤ 9−9 ≤ k ≤ 9 −7 ≤ k ≤ 6 -8 ≤ k ≤ 9−8 ≤ l ≤ 9 −6 ≤ l ≤ 9 -9 ≤ l ≤ 8Number of all13425 1506 13648Reflections Independent186 182 196Reflections Number of 27 26 20 Parameters Δρ , Δρ / eÅ 1.195 / −0.574 0.693 / −1.250 0.799 / -1.142R (obs / all) 0.0323 / 0.0328 0.0435 / 0.0451 0.0324 / 0.03992022PF00078 March 6, 2025P2023,0898 WO N - 36 - wR (obs / all) 0.0881 / 0.0884 0.1075 / 0.1085 0.0790 / 0.0835GooF 1.195 1.046 1.071In Table 2, the atomic positions of the phosphor 1 Ca6Si 9-v Li v N 14-3vO3+3v :Eu according to Example 21. Table 2: Atomic positions of Ca Si Li N :Eu from Example 21. The Si and Li layers were mixed-occupied, refined with a total occupancy according to the specified occupancy factor. Position Wyckoff xyz Occupancy Symbol C a01 3d 0 0 0,5 1,0Ca02 6g 0.5 0.5 0.9301(6) 0.5(Si,Li)01 4e 0.8559(3) 0.1441(3) 0.1441(3) 1.0(Si,Li)02 4e 0.7680(3) 0.2320(3) 0.7680(3) 1.0(Si,Li)03 1b 0.5 0.5 0.5 1.0(O,N)01 12i 0.7236(5) 0.2764(5) 0.9978(9) 1.0(O,N)02 4e 0.6355(8) 0.3645(8) 0.6355(8) 1.0(O,N)03 1a 0 0 0 1.0The crystallographic position parameters of Ca 6-x-r-q-p Y x-w-u+p Si 9- x-y-3w-2r Al x+y+3w+2r N 14-y-3u-2q+p O 3+y+3u+2q-p :Ce 3+ according to Example 5 are shown in Table 3. Table 3: Crystallographic position parameters of a CaYSiAlNO:Ce crystal according to Example 5. The Ca / Y layers were refined with mixed occupation with a total occupation corresponding to the specified occupation factor. N ame Atom- Wyckox yz occupation type ff- ung Symbo l2022PF00078 March 6, 2025P2023,0898 WO N - 37 -(Ca,Y)01 Ca 3c 0.5 1 0.5 1(Ca,Y)02 Y 6f 0 1 0.4297(4) 0.5(Si,Al)03 Si 4e 0.2660(5) 0.7340(5) 0.7340(5) 1(Si,Al)04 Si 1a 0 1 0 1(Si,Al)05 Si 4e 0.3516(4) 0.6484(4) 0.3516(4) 1N006 N 12i 0.2246(9) 0.7754(9) 0.5046(16) 1N007 N 1b 0.5 0.5 0.5 1N008 N 4e 0.1366(14) 0.8634(14) 0.8634(14) 1Die kristallographischen Lageparameter von Ca 6-x-r-q-p The x-w-u+p Yes 9- x-y-3w-2r Al x+y+3w+2r N 14-y-3u-2q+p About 3+y+3u+2q-p :Yes 3+ sind in der Tabelle 4 dargestellt. Table 4: Crystallographic position parameters of Ca La Si Al NO :Ce from Example 11. Atom Wykoff- xyz Besetzungssymbol La01 3d 0 0 0.5 0.21(14)Ca01 3d 0 0 0.5 0.79(14)La02 6g 0.5 0.5 0.9376(2) 0.466(14)Ca02 6g 0.5 0.5 0.9376(2) 0.034(14(Si,Al)01 1b 0.5 0.5 0.5 1(Si,Al)02 4e 0.1434(5) -0.1434(5) 0.1434(5) 1(Si,Al)03 4e -0.2299(5) 0.2299(5) 0.2299(5) 1N001 12i 0.2682(8) - 0.2682(8) 10.0036(18) N002 4e - 0.3557(15) 0.3557(15) 10.3557(15) N 003 1a 0 0 0 1Table 5 shows the crystallographic data of the unit cell of Ca 6-x-r-q-p La x-w-u+p Si9-xy-3w-2rAl x+y+3w+2r N 14-y-3u- 2q+p O 3+y+3u+2q-p :Ce 3+ shown. The unit cell was also determined by single-crystal X-ray diffraction. Several2022PF00078 6. March 2025P2023,0898 WO N - 38 - Crystals obtained in various embodiments 11 and 12. Table 5: Crystallographic data of the unit cell of Ca La Si Al NO :Ce , determined on crystals from embodiments 11-12. Embodiment, Space group a / Cell volume / Radiation Crystal Å Å 11, Crystal 1 P-43m (No. 7,55 430.0 Cu-Kα (λ = 215) 1.542 Å) 11, Crystal 2 P-43m (No. 7,55 429.7 Cu-Kα (λ = 215) 1.542 Å) 12, Crystal 1 P-43m (No. 7,57 433.7 Cu-Kα (λ = 215) 1.542 Å) Figure 6 shows the emission spectrum E1 of a phosphor 1, in this case Ca6Si 9-v Li v N 14-3v O 3+3v :Eu 2+, according to embodiment 21 upon excitation with electromagnetic radiation of an excitation spectrum in the UV or blue wavelength range. The phosphor 1 was excited at a wavelength of 448 nm. The emission spectrum is the spectral intensity I of the electromagnetic radiation emitted by the phosphor 1 as a function of the wavelength λ. The emission spectrum E1 is depicted in a wavelength range from 380 to 790 nm inclusive. The emission spectrum E1 has a dominant wavelength λ at an excitation wavelength of 448 nm. dom of 586 nm, an emission maximum is at 597 nm, and the full width at half maximum (FWHM) is 88 nm. Selected optical data can be found in Table 6. Figure 7 shows the emission spectrum E2 of a phosphor1, in this case Ca6Si 9-v Li v N 14-3v O 3+3v :Ce 3+ , according to a2022PF00078 6 March 2025P2023,0898 WO N - 39 -Example of an embodiment with excitation using electromagnetic radiation with an excitation spectrum in the UV or blue wavelength range. The phosphor 1 was excited at a wavelength of 448 nm. The emission spectrum E2 is shown in a wavelength range from 400 to 800 nm. The emission spectrum E2 has a dominant wavelength λ at an excitation wavelength of 448 nm. dom of 576 nm and an emission maximum is at 578 nm, and the full width at half maximum (FWHM) is 142 nm. Selected optical data can be found in Table 6. Table 6: Selected optical data of the embodiments 21 and 22 of the phosphor CaSi LiN O :Eu and CaSi LiN O :Ce . CaSi LiN O :Eu CaSi LiN O :Ce L ER / lm W 357 367λ / nm 597 578 λ / nm 586 576 FWHM / nm 88 142 CIE-x 0.541 0.470 CIE-y 0.446 0.493 Figure 8 shows several emission spectra E3, E4-1, E4-2, E-VB1 according to several embodiments and according to a comparative example. The excitation wavelength is 448 nm. The emission spectra E3, E4-1, and E4-2 were determined for the phosphor Ca6-xrq-pYx-w-u+pSi9-xy-3w-2rAlx+y+3w+2rN14-y-3u-2q+pO3+y+3u+2q-p:Ce3+ with x > 3 and thus Y:Ca > 1. This phosphor 1 emits in the orange spectral range. The emission spectrum E3 was determined from a crystal from Example 2, solid line, at a ratio of yttrium to calcium equal to 2.8, 2022PF00078 March 6, 2025P2023,0898 WO N - 40 -Confirmed by EDX. The dashed and dotted lines are the emission spectra E4-1 and E4-2, which were determined for two crystals from Example 3. Crystal 1 has an yttrium to calcium ratio of 1.2, confirmed by EDX, which shows the emission spectrum E4-1 (dashed line). Crystal 2 has an yttrium to calcium ratio of 1.6, confirmed by EDX, which shows the emission spectrum E4-2 (dotted line). The conventional phosphor YAG:Ce is shown as Comparative Example 1. Figure 9 differs from Figure 8 only in that the emission spectra are shown on an energy scale. Figure 10 shows a powder emission spectrum PE1 of the phosphor 1 Ca. 6-x-r-q-p Y x-w-u+p Si9-xy-3w-2rAl x+y+3w+2r N 14-y-3u- 2q+p O 3+y+3u+2q-p :Ce 3+of Example 1, solid line, at an excitation wavelength of 520 nm. Furthermore, a powder emission spectrum of a comparative example V-PE1 of the conventional phosphor YAG:Ce, dashed line, at an excitation wavelength of 460 nm is shown. Here, the intensity I is also plotted against the wavelength λ. Example 1 of the phosphor 1 Ca 6-x-r-q-p Y x-w-u+p Si9-xy-3w-2rAl x+y+3w+2r N 14-y-3u- 2q+p O 3+y+3u+2q-p :Ce 3+ is usually mixed with other phases. For Example 1, an almost phase-pure sample of Ca 6-x-r-q-p Y x-w-u+p Si 9-x-y-3w- 2r Al x+y+3w+2r N 14-y-3u-2q+p O 3+y+3u+2q-p :Ce 3+ with a small amount of Y2O3 as an impurity. The phosphor 1, in this case Ca6-xrq-pYx-w-u+pSi9-xy-3w-2rAlx+y+3w+2rN14-y-3u-2q+pO3+y+3u+2q-p:Ce3+, emits with a 2022PF00078 March 6, 2025P2023,0898 WO N -41 - Dominant wavelength λdom from 582 nm (Example 5) to 590 nm (Example 2). The emission band has a particularly narrow half-width (FWHM) of 128 nm to 141 nm, or 0.452 eV to 0.508 eV. This results in a narrow half-width for examples with a high RE content, i.e., for Y:Ca > 1. This makes Ca suitable. 6-x-r-q-p Y x-w-u+p Si9-xy-3w-2rAl x+y+3w+2r N 14-y-3u- 2q+p O 3+y+3u+2q-p :Ce 3+ as an orange to red conversion phosphor for applications in LEDs and significantly expands the color range achievable with Ce-activated phosphors. Figure 11 shows the excitation spectrum AS of phosphor 1 of the formula Ca 6-x-r-q-p Y x-w-u+p Si9-xy-3w-2rAl x+y+3w+2r N 14-y-3u-2q+p O 3+y+3u+2q- p :Ce 3+of Example 1 at a wavelength between 450 and 650 nm. The excitation spectrum AS of Example 1 is measured at an emission of 670 nm. The maximum of the excitation spectrum AS lies between 540 nm and 560 nm. Table 7 shows the spectral data of four crystals of the phosphor 1 Ca 6-x-r-q-p Y x-w-u+p Si 9-x-y-3w- 2r Al x+y+3w+2r N 14-y-3u-2q+p O 3+y+3u+2q-p :Ce 3+ from working examples 2, 3 and 5. Table 7: Spectral data of four crystals Ca Y SiAl NO :Ce from working examples 2, 3 and 5; Y,Ca and Si,Al determined by energy-dispersive X-ray spectroscopy (EDX) and 2022PF00078 March 6, 2025P2023,0898 WO N - 42 -Comparative Example 1 (one of the longest wavelength commercially available YAG:Ce phosphors), excitation wavelength is 448 nm. Execution Execution Execution Comparative Example 1 Example 3 Example 3 Example (YAG:Ce), 2, Crystal 1 Crystal 2 5, Average value Crystal 1 Crystal 1 from 9 measured crystals Y:Ca 2.78 1.18 1.63 1.05 -Si:Al 3.03 11.40 5.73 1 -Dominance -590 nm 588 nm 588 nm 582 nm 571 nm wavelength λ Peak wave -596 nm 602 nm 602 nm 598 nm 560 nm length λFWHM (nm) 129 nm 128 nm 128 nm 141 nm 127 nmFWHM (eV) 0.452 eV 0.459 eV 0.470 eV 0.508 eV 0.518 eVCIE-x 0.563 0.539 0.539 0.484 0.440CIE-y 0.421 0.423 0.423 0.508 0.533Table 8 shows the spectral data of the phosphor 1Ca 6-x-r-q-p Y x-w-u+p Si9-xy-3w-2rAl x+y+3w+2r N 14-y-3u-2q+p O 3+y+3u+2q-p :Ce 3+of the working example 1 and the comparative example 1 measured on a powder sample with excitation at 520 nm. Table 8: Spectral data of CaYSiAlNO:Ce, working example 1 measured on a powder sample with excitation at 520 nm, and comparative example 1, measured on powder samples with excitation at 460 nm. Working example 1 Comparative example 1 (YAG:Ce) Dominant wavelength 601 nm 574 nm λ Peak wavelength λ 610 nm 596 nm 2022PF00078 March 6, 2025 P2023,0898 WO N - 43 - FWHM 130 nm 118 nmFWHM (energy scale) 0.429 eV 0.467 evCIE-x 0.631 0.469CIE-y 0.368 0.519In Figure 12, an emission spectrum E6 of a crystal of the phosphor 1 Ca 6-x-r-q-p La x-w-u+p Si9-xy-3w-2rAl x+y+3w+2r N 14-y-3u-2q+pO3+y+3u+2q-p:Ce3+ according to embodiment 11, as well as an emission spectrum of comparative example E-VB1 measured at an excitation wavelength of 448 nm. Table 9 shows the spectral data of the crystal of phosphor 1, in this case Ca6-xrq-pLax-w-u+pSi9-xy-3w- 2r Al x+y+3w+2r N 14-y-3u-2q+p O 3+y+3u+2q-p :Ce 3+ from Example 11 and a comparative example of the phosphor YAG:Ce are shown. The excitation wavelength is 448 nm. Table 9: Spectral data of a Ca La Si crystal from embodiment 11 and comparison example (one of the longest-wavelength commercially available YAG:Ce phosphors), excitation wavelength is 448 nm. Embodiment Comparative Example 11, Example Crystal 1 (YAG:Ce), average of 9 measured crystals Dominant wavelength 598 nm 571 nm length λ Peak wavelength 593 nm 560 nm length λ FWHM (nm) 141 nm 127 nm FWHM (eV) 0.506 eV 0.518 eV 2022PF00078 March 6, 2025 P2023,0898 WO N - 44 -CIE-x 0.567 0.440 CIE-y 0.497 0.533 Figure 13 shows a schematic sectional view of an optoelectronic component 10 according to an exemplary embodiment, which has a semiconductor chip 11 which, during operation, emits electromagnetic radiation of a first wavelength range from a radiation exit surface 12. The semiconductor chip 11 comprises an active layer sequence and an active region (not explicitly shown here) which serves to generate the primary radiation. The primary radiation is electromagnetic radiation of a first wavelength range. It is preferably electromagnetic radiation with wavelengths in the visible range, for example in the blue to red spectral range. A conversion element 13 is arranged in the beam path of the electromagnetic radiation in the first wavelength range emitted by the semiconductor chip 11.The conversion element 13 is configured to absorb the electromagnetic radiation of the first wavelength range and to at least partially convert it into electromagnetic radiation of the emission spectrum. In particular, the emission spectrum has a longer wavelength than the absorbed first wavelength range. The conversion element 13 comprises a phosphor 1 with the general formula EA. 6-x-3t-r-3s-q-p SE x+3t-w-u-z+p T 9-x-t-y-v-3w-z-2r- 2sDx+y+3w+2rAt+v+z+2sN14-y-3v-3u-2q+pO3+y+3v+3u+2q-p:E. In particular, the conversion element 13 can contain the phosphor 1 with the formula 2022PF00078 6 March 2025P2023.0898 WO N - 45 - EA 6-3t-3s-x-p-q SE 3t-z+x+p T 9-t-v+z-2s-x-y D x+y A t+v-z+2s N 14-3v-y+p-2q O 3+3v+y-p+2q :E, EA 6-3t-x-p SE 3t+x+p T 9-t-v-x-y D x+y A t+v N 14-3v-y+p O 3+3v+y-p :E, EA 6-3t-p SE 3t+p T 9-t- v A t+v N 14-3v+p O 3+3v-p :E, EA6T 9-v A v N14-3v You 3+3v :Yes, YES 6-x-r-q-p THIS x-w-u+p T 9-x-y-3w-2rDx+y+3w+2rN14-y-3u-2q+pO3+y+3u+2q-p:E or EA6-x-pSEx+pT9-x-yDx+yN14-y+pO3+yp:E. The phosphor 1 can be embedded in a matrix material. The matrix material is, for example, a silicone, a polysiloxane, an epoxy resin, or a glass. Alternatively, the conversion element 13 can be free of a matrix material. In this case, the conversion element 13 can consist of the phosphor 1, for example, a ceramic of the phosphor 1. Alternatively, the conversion element 13 can have at least one further phosphor 1. The further phosphor 1 converts electromagnetic radiation of the first wavelength range into electromagnetic radiation of a further wavelength range. The further phosphor can, for example, convert the electromagnetic radiation of the first wavelength range into electromagnetic radiation of the yellow and / or green wavelength range.The additional phosphor can be, for example, a garnet phosphor and / or a nitride phosphor. Examples of these are β-SiAlON:Eu, (Ca,Sr,Ba)Si2O2N2:Eu, EA2Si(O,N)4:Eu, LuAG:Ce, YAGaG:Ce, and / or YAG:Ce. Other phosphors or combinations of phosphors are conceivable. The semiconductor chip 11 and the conversion element 13 are embedded in a recess 15 of a housing 14. For better stabilization and protection of the semiconductor chip 11 and the conversion element 13, the recess 15 of the 2022PF00078 March 6, 2025P2023,0898 WO N -. 46 -Housing 14 may be filled with a potting compound 16, and the semiconductor chip 11 and the conversion element 13 are completely encased by the potting compound 16. The conversion element 13 may, as shown in Figure 13, be arranged in direct mechanical contact with the semiconductor chip 11. In particular, the radiation exit surface 12 forms the common surface between the conversion element 13 and the semiconductor chip 11. Alternatively, further layers, such as adhesive layers, may be located between the semiconductor chip 11 and the conversion element 13. According to the exemplary embodiment shown in Figure 14, the conversion element 13 is arranged at a distance from the semiconductor chip 11. In this case, a potting compound 16 may be arranged between the semiconductor chip 11 and the conversion element 13. Alternatively, the recess 15 between the semiconductor chip 11 and the conversion element 13 can also be free of a potting 16 or further layers or components.According to the exemplary embodiment illustrated in Figure 15, the conversion element 13 is arranged in a recess 15. The semiconductor chip 11 is embedded in the conversion element 13. The conversion element 13 comprises the phosphor 1 and the matrix material, which is, for example, silicone. Further phosphors can be incorporated into the conversion element 13. Figures 16 to 21 each show simulated LED emission spectra of phosphor solutions.2022PF00078 March 6, 2025P2023,0898 WO N -. 47 - The phosphor solution of emission spectrum SE1 is a single-phosphor solution for generating low CCT (Correlated Color Temperature) values. The simulated LED emission spectrum was simulated by adding the emission spectrum SE1 of phosphor 1, in this case Ca6Si, to the emission spectrum of a blue-emitting semiconductor chip. 9-v Li v N 14-3v O 3+3v :Eu 2+was added. This achieved a target color point close to the Planck curve. The same procedure was applied for the conventional nitridosilicate phosphor. The simulated LED emission spectrum of the comparative example V-SE1 features a blue-emitting semiconductor chip with the conventional nitridosilicate phosphor. Both phosphor solutions, each with the blue-emitting semiconductor chip, exhibit comparable color coordinates and a comparable color temperature. The phosphor 1 Ca 2+6Si 9-v Li iv N 14-3v O 3+3v:Eu with the blue-emitting semiconductor chip shows significantly better CRI values. The CRI value is improved by 14 points compared to the conventional nitridosilicate phosphor in combination with the blue-emitting semiconductor chip. Table 10 shows the comparison of the properties of the simulated warm white LED with low CCT. Table 10: Comparison of the properties of a warm white LED with low CCT. Blue LED + Ca 6Si 9-Blue LED + vLi v N 14-3v O 3+3v :Eu 2+ (Ca,Sr,Ba)2Si5N8:Eu 2+ LED wavelength 447 nm 447 nmCa6Si 9-v Li v N 14- fluorescent 3v O 3+3v :Eu 2+ (Ca,Sr,Ba)2Si5N8:Eu 2+ C IE x 0,514 0,520 2022PF00078 6 March 2025P2023,0898 WO N - 48 - CIE y 0.414 0.414CCT / K 2112 2064 CRI 56 42 Figure 17 shows simulated LED emission spectra for white light LEDs with CCT = 4000 Kelvin from a blue-emitting LED and a phosphor solution SE2 according to one embodiment, as well as a comparison solution V-SE2. The phosphor solution of the emission spectrum SE2 according to the embodiment has YAGaG:Ce 3+ , YAG:Ce 3+ and the phosphor 1 Ca 6-x-r-q-p Y x-w-u+p Si9-xy-3w-2rAl x+y+3w+2r N 14-y-3u- 2q+pO3+y+3u+2q-p:Ce3+ from Example 2. The comparison solution V-SE2, on the other hand, has YAGaG:Ce 3+ , YAG:Ce 3+and (Sr,Ca)AlSiN3:Eu. Table 11 shows the comparison of solutions for white light generation with CRI (Colour Rendering Index) greater than or equal to 70 using the phosphor 1 Ca 6-x-r-q-p Y x-w- u+p Si9-xy-3w-2rAl x+y+3w+2r N 14-y-3u-2q+p O 3+y+3u+2q-p :Ce 3+ as orange component and using a commercially available (Sr,Ca)AlSiN3:Eu 2+ shown as the orange component. Table 11: Comparison of solutions for white light generation with CRI ≥ 70 using phosphor 1 as the orange component and using a commercially available (Sr,Ca)AlSiN:Eu as the orange component. Phosphor solution 1: Reference solution 1: solution Color temperature 4000 K 5000 K 4000 K 5000 KCCT2022PF00078 March 6, 2025P2023,0898 WO N - 49 - Color rendering CRI Figure 18 and Figure 17 differ only in the CCT value. Figure 18 shows simulated spectra SE2-2 and V-SE2-2 for white-light LEDs with a CCT of 5000 Kelvin. Figure 19 shows a simulated emission spectrum for amber-colored optoelectronic components for use, for example, in direction indicators. A blue-emitting semiconductor chip is used. The phosphor solution of the emission spectrum SE3 has YAG:Ce 3+ and the phosphor 1 Ca6-xrq-pYx-w-u+pSi9-xy-3w-2rAlx+y+3w+2rN14-y-3u-2q+pO3+y+3u+2q-p:Ce3+ from embodiment 2. The dashed line shows a simulated emission spectrum for a comparison emission spectrum V-SE3 with the comparison solution containing YAG:Ce 3+and (Sr,Ca)AlSiN3:Eu. Figures 20 and 21 show simulated LED emission spectra of phosphor solutions. The phosphor solution of emission spectrum SE4 has phosphor 1, in this case Ca6-xrq-pLax-w-u+pSi9-xy-3w-2rAlx+y+3w+2rN14- y-3u-2q+p O 3+y+3u+2q-p :Ce 3+ from embodiment 12 and the additional phosphors YAGaG:Ce 3+ and YAG:Ce 3+ The simulated reference emission spectrum V-SE4 shows the phosphor solution made of the reference phosphors (Sr,Ca)AlSiN3:Eu, YAGaG:Ce, and YAG:Ce. The color temperature in Figure 20 is 4000 Kelvin, and the color temperature in Figure 21 is 5000 Kelvin. The relative intensity is also plotted against the wavelength λ. Figure 21 shows the simulated LED emission spectra SE4-2 as well as the 2022PF00078 March 6, 2025P2023,0898 WO N - 50 -Simulated comparative emission spectrum V-SE4-2 at a color temperature of 5000 K. Table 12 shows the optical data of the simulated LED emission spectra of phosphor solution 2 comprising phosphor 1 Ca6-xrq-pLax-w-u+pSi9-xy-3w-2rAlx+y+3w+2rN14-y-3u-2q+pO3+y+3u+2q-p:Ce3+ according to embodiment 11 and the conventional phosphors YAGaG:Ce3+ and YAG:Ce3+, as well as a comparative example phosphor solution comprising the comparative phosphors YAGaG:Ce3+, YAG:Ce3+ and (Sr,Ca)AlSiN3:Eu. 2+ The blue-emitting semiconductor chip has a dominant wavelength of 450 nm and 453 nm, respectively. Table 12: Comparison of solutions for white light generation with CRI ≥70 using phosphor 1 as the orange component and using a conventional phosphor (Sr,Ca)AlSiN:Eu as the orange component. Phosphor solution Phosphor solution 2: Comparison solution 1: YAGaG:Ce + YAG:Ce YAGaG:Ce + YAG:Ce + Ca 6-x-r-q-p La x-w-u+pSi 9-x- + (Sr,Ca)AlSiN:Eu y -3w-2r Al x+y+3w+2r N 14-y-3u- 2q+p O 3+y+3u+2q-p :Ce 3+ (Embodiment 11) LED Wavelength 453 nm 450 nm 450 nm 450 nm Color Temperature 4000 K 5000 K 4000 K 5000 K CCT Color Rendering Index 71 70 70 71 CRI In the method according to the embodiment of Figure 22, a composition of reactants is provided in a first method step S1. 2022PF00078 March 6, 2025P2023,0898 WO N - 51 -The composition of the reactants can be stoichiometric or non-stoichiometric. The reactants are selected from a group that includes nitrides, oxides, nitrates, citrates, oxalates, halides, carbonates, hydroxides of EA, SE, T, D, A, E, and combinations thereof. The reactants are selected from the following group: yttrium compound, lanthanum compound, calcium compound, barium compound, strontium compound, silicon compound, cerium compound, aluminum compound, lithium compound, europium compound, and combinations thereof. The reactants can be selected from the following group: YN, Ca3N2, LaN, SiO2, BaN 1-α (α between -0.5 and 0.5), Si3N4, AlN and CeO 2,CeN, CeF3, Li3N, Eu2O3, EuN, EuF3, and combinations thereof. The reactants are weighed and thoroughly mixed under a protective gas atmosphere. This can be done in a hand mortar, mortar grinder, ball mill, multi-axis mixer, or similar. In the next step (S2), the reaction mixture is heated to a temperature between 800 °C and 2200 °C. Before heating, the homogenized reactant mixture is transferred to a crucible. This can be made of corundum, tungsten, molybdenum, nickel, or tantalum, for example. The maximum synthesis temperature is maintained for 0.5 hours to 100 hours. Annealing takes place under a nitrogen or reducing atmosphere, for example, forming gas, at atmospheric or elevated pressure. 2022PF00078 March 6, 2025P2023,0898 WO N - 52 -In the next step (S3), the reaction mixture is ground in a hand mortar after cooling. This can be done, for example, in a hand mortar, a mortar mill, or a ball mill. The phosphor 1, in this case Ca6Si9-vLivN14-3vO3+3v:E, is produced, for example, from the reactants Si3N4, SiO2, Li3N, and Ca3N2 in a molar ratio of 0.33:2:1.33:0.66, and, depending on the desired activator, with EuF3 or CeF3 as dopant and LiCl as flux. The activator content is 0.01 to 15 mol%, preferably 0.1 to 5 mol%, based on Ca. Between 0.1 wt% and 10 wt% of flux is added. Before synthesis, the reactants are thoroughly mixed in a glove box under a protective gas atmosphere and then transferred to a nickel crucible. The synthesis of the material takes place at high temperatures for 48 hours and an overpressure of N2.Typical synthesis temperatures are between 800 °C and 1100 °C, preferably between 850 °C and 1050 °C, particularly preferably between 900 °C and 1000 °C. A usual pressure range is between 20 bar and 100 bar, preferably between 40 bar and 90 bar, particularly preferably between 75 bar and 85 bar. By subsequent acid washing with 2 molar hydrochloric acid, the phase fraction of the phosphor 1 can be significantly increased. Table 13 summarizes the initial weight of the reactants required for the preparation of a phosphor 1 with the empirical formula. Ca 2 6Si9-vLivN14-3vO3+3v:Eu +,Ce3+ according to the embodiments 21 and 22.2022PF00078 6 March 2025P2023,0898 WO N - 53 - Table 13: Sample weight for the synthesis of calcium lithosilicate Ca6Si 9-v Li v N 14- Ca6Si 9-v Li v N 14- 3v O 3+3v :Eu , 3v O 3+3v:Ce , Working Example Working Example 21 22 CaN 3.125 g (21.1 mmol) 6.176 g (41.7 mmol) LiN 1.468 g (42.1 mmol) 2.902 g (83.3 mmol) SiN 1.478 g (10.5 mmol) 2.922 g (20.8 mmol) SiO 3.799 g (63.2 mmol) 7.508 g (125.0 mmol) EuF 0.130 g (0.63 mmol) CeF 0.493 g (2.5 mmol) LiCl 0.200 g (4.7 mmol) 0.400 g (9.4 mmol) The phosphor 1, present Ca6-xrq-pYx-w-u+pSi9-xy-3w-2rAlx+y+3w+2rN14-y-3u-2q+pO3+y+3u+2q-p:Ce3+, for example, is prepared from the reactants YN, Ca3N2, Si3N4, AlN, and CeO2 as dopant (activator content 0.01 to 15 mol%, preferably 0.1 to 5 mol% with respect to Ca and Y). Alternatively, CeN or CeF3 can also be used as dopant. Before synthesis, the reactants are thoroughly mixed in a glove box under a protective gas atmosphere and then transferred to a tungsten crucible.The synthesis of the material takes place at high temperatures for 0.5 to 24 hours, preferably for 1 to 12 hours, particularly preferably between 2 and 6 hours under N2 or reducing conditions (e.g., forming gas). Typical synthesis temperatures are between 1600 and 2200 °C, preferably between 1750 and 2100 °C, particularly preferably between 1800 and 2000 °C. Additionally, an overpressure of 5 to 100 bar, preferably 10 to 50 bar, particularly preferably 15 to 40 bar, can be used. The temperature 2022PF00078 March 6, 2025P2023,0898 WO N - is particularly preferred. 54 -between 1800 °C and 2000 °C for 4 hours at 20 bar under an N2 atmosphere. After the reaction and cooling, the product can be ground. This can be done, for example, in a hand mortar, a mortar grinder, or a ball mill. Subsequent acid washing with 2-molar hydrochloric acid significantly increases the phase fraction of the phosphor 1. Table 14 lists the reactant compositions of all working examples 1 to 3 and 5. For all working examples 1, 2, 3, and 5, the phase Ca was used. 6-x-r-q- p Y x-w-u+p Si9-xy-3w-2rAl x+y+3w+2r N 14-y-3u-2q+p O 3+y+3u+2q-p :Ce 3+ in the corresponding samples by single-crystal diffraction. Table 14: Sample weight for the synthesis of Ca Y Si Y:Ca YN AlN Ca2N3 Si3N4 CeO2Execution 2:1 13.1341.321 3.153 12.059 0.333 Example 1 ggggg Execution 5:1 7,813 1,257 0,750 5,021 0,158 example 2 ggggg execution- 2:1 6,5670.661 1.577 6.029 0.166 example 3 ggggg Execution-1:1 8.955 0 g 4.3 g 16.4430.303 example 5 ggg The phosphor 1, in this case Ca 6-x-r-q-p La x-w-u+p Si 9-x-y-3w- 2r Al x+y+3w+2r N 14-y-3u-2q+p O 3+y+3u+2q-p :Ce 3+ According to embodiments 11 and 12, the reactants LaN, Ca3N2, Si3N4, AlN and CeO2 as dopant are prepared (Table 15, activator content 0.01 to 15 mol%, preferably 0.1 to 5 mol% with respect to Ca and La). Alternatively, CeN2022PF00078 6 March 2025P2023,0898 WO N - 55 -or CeF3 can be used as a dopant. The reactants are thoroughly mixed in a glove box under a protective gas atmosphere prior to synthesis and then transferred to a tungsten crucible. The material is synthesized at high temperatures for 0.5 to 100 hours, preferably for 1 to 80 hours, particularly preferably between 2 and 60 hours under N2 or reducing conditions (e.g., forming gas). Typical synthesis temperatures are between 800 and 2200 °C, preferably between 900 and 2100 °C, particularly preferably between 900 and 2000 °C. Additionally, an overpressure of 2 to 100 bar, preferably 5 to 50 bar, particularly preferably 10 to 40 bar, can be used. After the reaction and cooling, the product can be ground. This can be done, for example, in a hand mortar, a mortar grinder, or a ball mill. By subsequent acid washing with 2-molar hydrochloric acid, the phase fraction of phosphor 1 can be significantly increased.Table 15 lists the reactant compositions of all working examples 11 and 12. For all working examples 11 to 12, the structure of the target phase is clearly demonstrated based on its space group and unit cell parameters. Table 15: Sample weight for the synthesis of CaLaSiAlNO:Ce. Ca:LaLaNAlNCaNSiNCeOWorking example 1:1 0.5585 0.7486 0.1805 0.5124 0.02 11 ggggg Working example 1:1 0.9079g 0.2434 0.2934 0.5553 0.02 12 gggg The phosphor 1, in this case Ba. 6-x-r-q-p La x-w-u+p Si 9-x-y-3w- 2r Al x+y+3w+2r N 14-y-3u-2q+p O 3+y+3u+2q-p :Ce 3+ according to embodiment 132022PF00078 6 March 2025P2023,0898 WO N - 56 - is formed from the reactants LaN, BaN 1-α(-0.5 ≤ α ≤ 0.5), Si3N4, AlN, and CeO2 as dopants. Alternatively, CeN or CeF3 can also be used as dopants. Before synthesis, the reactants are thoroughly mixed in a glove box under a protective gas atmosphere and then transferred to a tungsten crucible. The material is synthesized at high temperatures for 0.5 to 100 hours, preferably for 1 to 80 hours, particularly preferably between 2 and 65 hours under N2 or reducing conditions (e.g., forming gas). Typical synthesis temperatures are between 800 and 2200 °C, preferably between 900 and 2100 °C, particularly preferably between 900 and 2000 °C. In addition, an overpressure of 2 to 100 bar, preferably between 5 to 50 bar, particularly preferably between 10 to 40 bar can be used. After the reaction and cooling, the product can be ground. This can be done, for example, in a hand mortar, a mortar grinder, or a ball mill.By subsequent acid washing with 2 molar hydrochloric acid, the phase fraction of the phosphor 1 can be significantly increased. The features and exemplary embodiments described in conjunction with the figures can be combined with one another according to further exemplary embodiments, even if not all combinations are explicitly described. Furthermore, the exemplary embodiments described in conjunction with the figures can alternatively or additionally have further features according to the description in the general part. The invention is not limited to the exemplary embodiments by the description based on these. Rather, the invention encompasses any new feature and any combination of features, which in particular includes any combination of features in2022PF00078 March 6, 2025P2023,0898 WO N -. 57 -the patent claims, even if this feature or combination itself is not explicitly stated in the patent claims or exemplary embodiments. This patent application claims priority from German patent application 102024107802.2, the disclosure of which is hereby incorporated by reference.

[0002] 2022PF00078 6 March 2025P2023,0898 WO N - 58 - List of reference symbols1 phosphor2 (T,D,A)(N,O)4 tetrahedron3 first motif4 N or O atom5 second motif6 full occupation7 half occupation8 EA atom and / or SE atom10 optoelectronic component11 semiconductor chip12 radiation exit surface13 conversion element14 housing15 recess16 encapsulation17 framework structureE1 emission spectrum of Ca2+6Si9-vLivN14-3vO3+3v:Eu, 448 nmE2 emission spectrum of Ca3+6Si9-vLivN14-3vO3+3v:Ce, 448 nmE3 emission spectrum of Ca6-xrq-pYx-w-u+pSi9-xy-3w- 2r Al x+y+3w+2r N 14-y-3u-2q+p O 3+y+3u+2q-p :Ce 3+with Y / Ca = 2.8; 448 nmE4-1 emission spectrum of Ca6-xrq-pYx-w-u+pSi9-xy-3w- 3+ 2rAlx+y+3w+2rN14-y-3u-2q+pO3+y+3u+2q-p: Ce with Y / Ca = 1.2 for crystal 1; 448 nmE4-2 emission spectrum of Ca6-xrq-pYx-w-u+pSi9-xy-3w- 2r Al x+y+3w+2r N 14-y-3u-2q+p O 3+y+3u+2q-p :Ce 3+ with Y / Ca = 1.6 for crystal 2; 448 nm E-VB1 emission spectrum comparison example YAG:Ce, 448 nmPE1 powder emission spectrum of Ca6-xrq-pYx-w-u+pSi9-xy-3w-2rAlx+y+3w+2rN14-y-3u-2q+pO3+y+3u+2q-p:Ce 3+ , 520 nm V-PE1 Comparison powder emission spectrum of YAG:Ce, 460 nm2022PF00078 March 6, 2025P2023,0898 WO N - 59 - AS excitation spectrum of Ca6-xrq-pYx-w-u+pSi9-xy-3w- 2r Al x+y+3w+2r N 14-y-3u-2q+p O 3+y+3u+2q-p :Ce 3+ E6 emission spectrum of Ca6-xrq-pLax-w-u+pSi9-xy-3w- 2r Al x+y+3w+2r N 14-y-3u-2q+p O 3+y+3u+2q-p :Ce 3+ + , 448 nm SE1 simulated emission spectrum with Ca6Si 9-v Li v N 14- V-SE1 simulated comparison emission spectrum of a conventional nitridosilicate phosphorSE2 simulated emission spectrum with YAGaG:Ce3+, YaG:Ce3+ and phosphor Ca 6-x-r-q-p Y x-w-u+p Si9-xy-3w-2rAl x+y+3w+2r N 14-y- 3u-2q+p O 3+y+3u+2q-p :Ce 3+ , CCT = 4000 KV-SE2 simulated comparison emission spectrum withYAGaG:Ce 3+ , YAG:Ce 3+ and (Sr,Ca)AlSiN3:Eu 2+ , CCT = 4000 KSE2-2 simulated emission spectrum with YAGaG:Ce3+, YaG:Ce3+ and phosphor Ca 6-x-r-q-p Y x-w-u+p Si9-xy-3w-2rAl x+y+3w+2r N 14-y- 3u-2q+p O 3+y+3u+2q-p :Ce 3+ , CCT = 5000 KV-SE2-2 simulated comparison emission spectrum withYAGaG:Ce 3+ , YAG:Ce 3+ and (Sr,Ca)AlSiN3:Eu 2+ , CCT = 5000 K SE3 simulated emission spectrum with YAG:Ce 3+ , YAGaG:Ce 3+ and phosphor Ca 6-x-r-q-p Y x-w-u+p Si9-xy-3w-2rAl x+y+3w+2r N 14-y- 3u-2q+p O 3+y+3u+2q-p :Ce 3+V-SE3 simulated comparison emission spectrum with YAG:Ce 3+ and (Sr,Ca)AlSiN3:Eu 2+ SE4 simulated emission spectrum with YAGaG:Ce3+, YAG:Ce3+ and phosphor Ca 6-x-r-q-p La x-w-u+p Si9-xy-3w-2rAl x+y+3w+2r N 14-y- 3u-2q+p O 3+y+3u+2q-p :Ce 3+ , CCT = 4000 K V-SE4 simulated comparison emission spectrum with YAGaG:Ce 3+ , YAG:Ce 3+ and (Sr,Ca)AlSiN3:Eu 2+ , CCT = 4000 K2022PF00078 March 6, 2025P2023.0898 WO N - 60 - SE4-2 simulated emission spectrum with YAGaG:Ce3+, YAG:Ce3+ and phosphor Ca 6-x-r-q-p La x-w-u+p Si9-xy-3w-2rAl x+y+3w+2r N 14-y- 3u-2q+p O 3+y+3u+2q-p :Ce 3+ , CCT = 5000 KV-SE4-2 simulated comparison emission spectrum withYAGaG:Ce 3+ , YAG:Ce 3+ and (Sr,Ca)AlSiN3:Eu 2+ , CCT = 5000 K

Claims

2022PF00078 6 March 2025P2023,0898 WO N - 61 - Claims 1. Phosphor (1) with the general formula EA 6-x-3t-r-3s-q-p SE x+3t-w-u-z+p T 9-x-t-y-v-3w-z-2r-2s D x+y+3w+2r A t+v+z+2s N 14-y-3v-3u- 2q+p O 3+y+3v+3u+2q-p:E, where - EA is an element or a combination of elements from the group of divalent elements, - SE is an element or a combination of elements from the group of rare earth elements, - T is an element or a combination of elements from the group of tetravalent elements, - D is an element or a combination of elements from the group of trivalent elements, - A is an element or a combination of elements from the group of monovalent elements, - E is an element or a combination of elements from the group Ce, Eu, Mn, Tb, Dy, Er, Cr, Ni, Bi, Cu, where - 2*(6-x-3t-r-3s-qp) + 3*(x+3t-wu-z+p) + 4*(9-xtyv-3w-z-2r-2s) + 3*(x+y+3w+2r) + 1*(t+v+z+2s) - 3*(14-y-3v-3u-2q+p)- 2*(3+y+3v+3u+2q-p) = 0;- 0 ≤ x+3t+r+3s+q+p ≤ 6;- 0 ≤ x+3t-wu-z+p ≤ 6;- 0 ≤ x+t+y+v+3w+z+2r+2s ≤ 9;- 0 ≤ x+y+3w+2r ≤ 9;- 0 ≤ t+v+z+2s ≤ 9; and- -3 ≤ y+3v+3u+2q-p ≤ 14.

2. The phosphor (1) according to claim 14, wherein EA comprises calcium, strontium, and / or barium.3.Phosphor (1) according to one of the preceding claims, wherein SE comprises yttrium and / or lanthanum.2022PF00078 March 6, 2025P2023,0898 WO N -. 62 - 4. Phosphor (1) according to one of the preceding claims, wherein T comprises silicon.

5. Phosphor (1) according to one of the preceding claims, wherein D comprises aluminum.

6. Phosphor (1) according to one of the preceding claims, wherein A comprises lithium.

7. Phosphor (1) according to one of the preceding claims, wherein the phosphor (1) has the formula EA 6-3t-3s-x-p-q SE 3t-z+x+p T 9-t-v+z-2s-x-y D x+y A t+v-z+2s N 14-3v-y+p-2q O 3+3v+y-p+2q :E, where- 2*(6-3t-3s-xpq)+3*(3t-z+x+p)+4*(9-t-v+z-2s-xy) +3*(x+y) + 1*(t+v-z+2s)-3*(14-3v-y+p-2q)-2*(3+3v+y-p+2q) = 0,- -6 ≤ -3t-3s-xpq ≤ 0,- 0 ≤ 3t-z+x+p ≤ 6,- -9 ≤ -t-v+z-2s-xy ≤ 0,- 0 ≤ x+y ≤ 9,- 0 < t+v-z+2s ≤ 9, and- -14 ≤ -3v-y+p-2q ≤ 3.

8. Phosphor (1) according to one of the preceding claims, wherein the phosphor (1) has the formula EA 6-3t-x-p SE 3t+x+p T 9-t-v-x-yDx+yAt+vN14-3v-y+pO3+3v+yp:E, where- 2*(6-3t-xp)+3*(3t+x+p)+4*(9-tvxy) + 3*(x+y) +1*(t+v)-3*(14-3v-y+p)-2*(3+3v+yp) = 0,- -6 ≤ -3t-xp ≤ 0,- 0 ≤ 3t+x+p ≤ 6,- -9 ≤ -tvxy ≤ 0,- 0 ≤ x+y ≤ 9,- 0 < t+v ≤ 9, and- -14 ≤ -3v-y+p ≤ 3.2022PF00078 March 6th 2025P2023,0898 WO N - 63 - 9. The phosphor (1) according to any one of the preceding claims, wherein the phosphor (1) has the formula EA6-3t-pSE3t+pT9-t-vAt+vN14-3v+pO3+3v-p:E, where - 2*(6-3t-p)+3*(3t+p)+4*(9-tv) + 1*(t+v)-3*(14-3v+p)-2*(3+3v-p) = 0, - 0 ≤ 3t+p ≤ 6, - 0 < t+v ≤ 9; and - -14 ≤ -3v+p ≤ 3.

10. The phosphor (1) according to any one of the preceding claims, wherein the phosphor (1) has the formula EA6-x-3t-r-3s-q-pSEx+3t-wu- z+p T 9-x-t-y-v-3w-z-2r-2s D x+y+3w+2r A t+v+z+2s N 14-y-3v-3u-2q+p O 3+y+3v+3u+2q-p:E, where- 2*(6-x-3t-r-3s-qp) +3*(x+3t-wu-z+p)+4*(9-xtyv-3w-z-2r-2s)+3*(x+y+3w+2r)+1*(t+v+z+2s)-3*(14-y-3v-3u-2q+p)- 2*(3+y+3v+3u+2q-p) = 0,- 3 < x+3t+r+3s+q+p ≤ 6,- 3 < x+3t-wu-z+p ≤ 6,- 0 ≤ x+t+y+v+3w+z+2r+2s ≤ 9,- 0 ≤ x+y+3w+2r ≤ 9,- 0 ≤ t+v+z+2s ≤ 9, and- -3 ≤ y+3v+3u+2q-p ≤ 11 / 14. Phosphor (1) according to one of the preceding claims, wherein the phosphor (1) has the formula EA6-xrq-pSEx-w-u+pT9-xy-3w-2rDx+y+3w+2rN14-y-3u-2q+pO3+y+3u+2q-p:E, where - 2*(6-xrqp) + 3*(xw-u+p)+4*(9-xy-3w-2r)+3*(x+y+3w+2r)-3*(14-y-3u-2q+p)-2*(3+y+3u+2q-p) = 0, - 3 < x+r+q+p ≤ 6, - 3 < xw-u+p ≤ 6, - 0 ≤ x+y+3w+2r ≤ 9, and - -3 ≤ y+3u+2q-p ≤ 14.2022PF00078 6 March 2025P2023,0898 WO N - 64 - 12. Phosphor (1) according to one of the preceding claims, wherein the phosphor (1) has the formula EA6-x-pSEx+pT9-x-yDx+yN14- y+p O 3+y-p :E, where - 3 < x+p ≤ 6, - 0 ≤ x+y ≤ 9, and - -3 ≤ yp ≤ 14.

13. Phosphor (1) according to one of the preceding claims, wherein the phosphor (1) crystallizes in the cubic space group P-43m.

14. Phosphor (1) according to one of the preceding claims, wherein a crystal structure of the host lattice of the phosphor (1) comprises corner-sharing (T,D,A)(N,O)4 tetrahedra (2).

15. Phosphor (1) according to one of the preceding claims, wherein the crystal structure of the host lattice of the phosphor (1) has a first motif (3) comprising four (T,D,A)(N,O)4 tetrahedra (2) that are corner-sharing via exactly one common N or O atom (4).

16. Phosphor (1) according to one of the preceding claims, in which a dominant wavelength (λ dom) of the electromagnetic radiation emitted by the phosphor (1) is between 550 nm and 650 nm inclusive.

17. The phosphor (1) according to any one of the preceding claims, wherein a half-width of the electromagnetic radiation emitted by the phosphor (1)2022PF00078 6. March 2025P2023,0898 WO N - 65 - emitted electromagnetic radiation is between 80 nm and 200 nm inclusive.

18. Optoelectronic component (10) comprising: - a semiconductor chip (11) which, during operation, emits electromagnetic radiation of a first wavelength range from a radiation exit surface (12), and - a conversion element (13) comprising a phosphor (1) according to claim 1, which converts electromagnetic radiation of the first wavelength range into electromagnetic radiation of the emission spectrum.

19. Method for producing a phosphor (1) having the general formula EA 6-x-3t-r-3s-q-p SE x+3t-w-u-z+p T 9-x-t-y-v-3w-z-2r-2s D x+y+3w+2r A t+v+z+2s N 14-y-3v-3u- 2q+pO 3+y+3v+3u+2q-p :E, where - EA is an element or a combination of elements from the group of divalent elements, - SE is an element or a combination of elements from the group of rare earth elements, - T is an element or a combination of elements from the group of tetravalent elements, - D is an element or a combination of elements from the group of trivalent elements, - A is an element or a combination of elements from the group of monovalent elements, - E is an element or a combination of elements from the group Ce, Eu, Mn, Tb, Dy, Er, Cr, Ni, Bi, Cu, - 2*(6-x-3t-r-3s-qp) + 3*(x+3t-wu-z+p) + 4*(9-xtyv-3w-z-2r-2s) + 3*(x+y+3w+2r) + 1*(t+v+z+2s) - 3*(14-y-3v-3u-2q+p)- 2*(3+y+3v+3u+2q-p) = 0;- 0 ≤ x+3t+r+3s+q+p ≤ 6;2022PF00078 March 6, 2025P2023.0898 WO N - 66 -- 0 ≤ x+3t-wu-z+p ≤ 6;- 0 ≤ x+t+y+v+3w+z+2r+2s ≤ 9;- 0 ≤ x+y+3w+2r ≤ 9;- 0 ≤ t+v+z+2s ≤ 9;- -3 ≤ y+3v+3u+2q-p ≤ 14, comprising the steps of - providing a composition of reactants, - homogenizing the reactants to produce a reaction mixture, and - heating the reaction mixture to a temperature between 800 °C and 2200 °C inclusive.

20. A process for producing a phosphor (1) according to the preceding claim, wherein the reactants are selected from the following group: yttrium compound, lanthanum compound, calcium compound, barium compound, strontium compound, silicon compound, cerium compound, aluminum compound, lithium compound, europium compound and combinations thereof.

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