Composition for forming primer film, laminate, method for producing laminate, and method for producing processed semiconductor substrate or electronic device substrate

Abstract

The present invention provides, for example, a laminate which comprises a support substrate, a semiconductor substrate or an electronic device substrate, and an adhesive layer that is provided between the semiconductor substrate or the electronic device substrate and the support substrate, and with which it is possible to control the separation interface when a semiconductor wafer is separated from the support substrate.　This laminate comprises a support substrate, a semiconductor substrate or an electronic device substrate, and an adhesive layer that is provided between the semiconductor substrate or the electronic device substrate and the support substrate, wherein: a primer film is formed on a substrate surface of one of the semiconductor substrate, the electronic device substrate, and the support substrate; and the primer film is formed of a composition for forming a primer film for enhancing the adhesion between a substrate and an adhesive layer that is formed of an adhesive composition which contains an adhesive component that is cured by a hydrosilylation reaction, the composition for forming a primer film containing a component that contributes to the hydrosilylation reaction.

Description

Primer film-forming composition, laminate, method for manufacturing laminate, and method for manufacturing processed semiconductor substrate or electronic device substrate

[0001] The present invention relates to a primer film-forming composition, a laminate, a method for producing a laminate, and a method for producing a processed semiconductor substrate or electronic device substrate.

[0002] Semiconductor wafers have traditionally been integrated in a two-dimensional plane, but for the purpose of further integration, semiconductor integration technology is required that integrates (stacks) the plane in a three-dimensional plane as well. This three-dimensional stacking is a technology that integrates multiple layers while connecting them using through silicon vias (TSVs). When integrating multiple layers, each wafer to be integrated is thinned by polishing the side opposite the circuit surface (i.e., the backside), and the thinned semiconductor wafers are stacked.

[0003] Semiconductor wafers (herein simply referred to as wafers) before thinning are bonded to a support in preparation for polishing with a polishing device. This bond must be easily peeled off after polishing, and is therefore called a temporary bond. This temporary bond must be easily removed from the support; applying a large force to remove it can cause the thinned semiconductor wafer to break or deform, so it must be easily removed to prevent this from happening. However, it is undesirable for the temporary bond to become dislodged or shifted due to the polishing stress during polishing of the backside of the semiconductor wafer. Therefore, the performance required of the temporary bond is to withstand the stress during polishing and be easily removed after polishing.

[0004] As temporary adhesives used for such temporary bonding, adhesives containing polydimethylsiloxane (Patent Document 1) and temporary adhesives containing epoxy-modified polysiloxane (Patent Document 2) have been proposed.

[0005] International Publication No. 2017 / 221772 Pamphlet International Publication No. 2018 / 216732 Pamphlet

[0006] As described above, in the temporary bonding between a semiconductor wafer and a support, the adhesive layer formed from the temporary adhesive is difficult to peel off from the support or semiconductor wafer during temporary bonding, while the adhesive layer must be easily peeled off from the support or semiconductor wafer when the semiconductor wafer is peeled off from the support. When peeling the semiconductor wafer from the support, the peeling location may be the interface between the semiconductor wafer and the adhesive layer (also referred to as device peeling (device release)), or the interface between the support and the adhesive layer (also referred to as carrier peeling (carrier release)). For example, when the peeling is carrier peeling, the adhesive layer remains (adheres) on the device side of the semiconductor wafer, which increases the cleaning time after peeling compared to device peeling, raising concerns that the cleaning burden on the device substrate (semiconductor wafer) may be increased. Therefore, in order to avoid the above-mentioned concerns, device peeling is preferred. Thus, device peeling is preferred from the viewpoint of minimizing the residue of the adhesive layer on the device substrate, but on the other hand, carrier peeling may be desired due to the adhesive layer used, the type of each substrate that comes into contact with it, or the conditions set in the manufacturing process, etc. Therefore, when peeling a semiconductor wafer from a support, it is convenient to be able to control the location of peeling (peeling interface).

[0007] The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a laminate including a support substrate, a semiconductor substrate or an electronic device substrate, and an adhesive layer provided between the semiconductor substrate or the electronic device substrate and the support substrate, which laminate allows control of the peel interface when peeling the semiconductor wafer from the support substrate.

[0008] As a result of intensive research conducted by the present inventors to solve the above-mentioned problems, they discovered that the above-mentioned problems can be solved by providing a primer coating between the adhesive layer and the substrate, which can increase the adhesive strength between the adhesive layer and the substrate, and thus completed the present invention having the following gist.

[0009] That is, the present invention encompasses the following: [1] A primer coating-forming composition for enhancing the adhesive strength between a substrate and an adhesive layer formed from an adhesive composition containing an adhesive component that cures by a hydrosilylation reaction, the primer coating-forming composition containing a component that contributes to the hydrosilylation reaction. [2] The primer coating-forming composition according to [1], wherein the component that contributes to the hydrosilylation reaction is selected from the group consisting of a platinum-containing compound, a Si—H group-containing compound, and a vinyl group-containing compound. [3] The primer coating-forming composition according to [1] or [2], wherein the adhesive composition that forms the adhesive layer contains the adhesive component and a release agent component. [4] The primer coating-forming composition according to [3], wherein the release agent component contains a polyorganosiloxane. [5] The primer coating composition according to any one of [1] to [4], wherein the adhesive component that cures by a hydrosilylation reaction contains: a component (A-1) having an alkenyl group having 2 to 40 carbon atoms bonded to a silicon atom, a component (A-2) having an Si—H group, and a platinum group metal catalyst (A-3). [6] A laminate comprising: a support substrate; a semiconductor substrate or an electronic device substrate; and an adhesive layer provided between the semiconductor substrate or the electronic device substrate and the support substrate, wherein a primer coating is formed on a surface of either the semiconductor substrate or the electronic device substrate or the support substrate, and the primer coating is a primer coating formed from the primer coating composition according to any one of [1] to [5]. [7] The laminate according to [6], wherein the primer coating is formed on the surface of the support substrate.[8] A method for producing a laminate having a support substrate, a semiconductor substrate or an electronic device substrate, an adhesive layer provided between the semiconductor substrate or the electronic device substrate and the support substrate, and a primer film formed on a substrate surface of either the semiconductor substrate or the electronic device substrate or the support substrate, the method comprising: forming a primer film by applying the primer film-forming composition according to any one of [1] to [5] to the substrate surface of either the semiconductor substrate or the electronic device substrate or the support substrate. [9] The method for producing the laminate according to [8] further comprises: applying an adhesive composition for forming the adhesive layer to either the semiconductor substrate or the electronic device substrate or the support substrate on which the primer film is not formed; and bonding the substrate on which the primer film is formed and a substrate on which the adhesive composition is applied, and then performing a heat treatment to form an adhesive layer between the semiconductor substrate or the electronic device substrate and the support substrate.

[10] A method for producing the laminate according to [9], comprising the steps of: forming a primer film by applying the primer film-forming composition according to any one of [1] to [5] to the surface of a support substrate; applying an adhesive composition for forming an adhesive layer to a semiconductor substrate or an electronic device substrate; bonding the support substrate on which the primer film has been formed and the semiconductor substrate or the electronic device substrate on which the adhesive composition has been applied, and then performing a heat treatment to form an adhesive layer between the semiconductor substrate or the electronic device substrate and the support substrate.

[11] A method for producing a processed semiconductor substrate or electronic device substrate, comprising: a fifth step of processing the semiconductor substrate or the electronic device substrate of the laminate according to [6] or [7]; and a sixth step of separating the semiconductor substrate or the electronic device substrate processed in the fifth step from the support substrate.

[0010] According to the present invention, there can be provided a laminate having a support substrate, a semiconductor substrate or an electronic device substrate, and an adhesive layer provided between the semiconductor substrate or the electronic device substrate and the support substrate, which laminate can control the peel interface when peeling the semiconductor wafer from the support substrate.

[0011] Fig. 1 is a schematic cross-sectional view of an example of a laminate. Fig. 2 is a schematic cross-sectional view of another example of a laminate. Fig. 3A is a schematic cross-sectional view (part 1) for explaining a method for manufacturing the laminate shown in Fig. 1. Fig. 3B is a schematic cross-sectional view (part 2) for explaining a method for manufacturing the laminate shown in Fig. 1. Fig. 3C is a schematic cross-sectional view (part 3) for explaining a method for manufacturing the laminate shown in Fig. 1. Fig. 4A is a schematic cross-sectional view (part 1) for explaining a method for manufacturing the laminate shown in Fig. 2. Fig. 4B is a schematic cross-sectional view (part 2) for explaining a method for manufacturing the laminate shown in Fig. 2. Fig. 4C is a schematic cross-sectional view (part 3) for explaining a method for manufacturing the laminate shown in Fig. 2. Fig. 4D is a schematic cross-sectional view (part 4) for explaining a method for manufacturing the laminate shown in Fig. 2.

[0012] (Laminate) The laminate of the present invention is a laminate having a support substrate, a semiconductor substrate or electronic device substrate, and an adhesive layer provided between the semiconductor substrate or electronic device substrate and the support substrate, wherein a primer film is formed on the surface of either the semiconductor substrate or the electronic device substrate or the support substrate. The primer film is formed from the primer film-forming composition described below. The primer film-forming composition is a composition for increasing the adhesive strength between a substrate and an adhesive layer formed from an adhesive composition containing an adhesive component that cures by a hydrosilylation reaction, and contains a component that contributes to the hydrosilylation reaction.

[0013] In the present invention, by disposing a primer layer formed from a primer film-forming composition containing a component that contributes to a hydrosilylation reaction in a laminate, it is possible to increase the adhesive strength between the substrate and an adhesive layer formed from an adhesive composition containing an adhesive component that cures by a hydrosilylation reaction. As a result, in a laminate having the primer layer, the adhesive layer is less likely to peel off from the support substrate or semiconductor substrate or electronic device substrate when temporarily bonded, and on the other hand, when peeling the semiconductor substrate or electronic device substrate from the support substrate, the adhesive layer can be easily peeled off at the interface between the substrate not having the primer film and the adhesive layer.

[0014] The present invention specifies that "a primer film is formed on the surface of any one of a semiconductor substrate or an electronic device substrate, and a support substrate," and specific embodiments of forming the primer film include, for example, the following: (a) In a laminate having a semiconductor substrate and a support substrate, a primer film is formed on the surface of the support substrate; (b) In a laminate having an electronic device substrate and a support substrate, a primer film is formed on the surface of the support substrate; (c) In a laminate having a semiconductor substrate and a support substrate, a primer film is formed on the surface of the semiconductor substrate; (d) In a laminate having an electronic device substrate and a support substrate, a primer film is formed on the surface of the electronic device substrate.

[0015] For example, in the case of the above embodiment (a), the adhesive strength between the substrate having the primer coating and the adhesive layer is increased by the primer coating, so when an attempt is made to peel the semiconductor substrate from the support substrate, peeling occurs at the interface between the substrate not having the primer coating and the adhesive layer. That is, in the case of the above embodiment (a), peeling (device peeling) occurs at the interface between the semiconductor substrate and the adhesive layer. Similarly, in the above embodiment (b), peeling (device peeling) occurs at the interface between the electronic device substrate and the adhesive layer. On the other hand, in the above embodiment (c) and embodiment (d), peeling (carrier peeling) occurs at the interface between the support substrate and the adhesive layer. In this way, the peeling interface can be controlled by determining which substrate in the laminate has the primer coating.

[0016] In the present invention, the laminate may be in the form of device peeling or carrier peeling, as long as the objective of controlling the peel interface is achieved. In the present invention, the substrate on which the primer coating is disposed can be appropriately selected taking into consideration the adhesive layer used, the type of each substrate in contact with it, the conditions set in the manufacturing process, etc. However, the following description will be given taking as an example the case of device peeling in which a primer coating is formed on the surface of a support substrate.

[0017] The laminate of the present invention is used for temporary bonding when processing a semiconductor substrate or an electronic device substrate, and can be suitably used for processing such as thinning a semiconductor substrate or an electronic device substrate (hereinafter, "semiconductor substrate or electronic device substrate" will also be collectively referred to as "semiconductor substrate, etc."). While the semiconductor substrate, etc. is being processed such as thinning, the semiconductor substrate, etc. is supported by a support substrate. On the other hand, after processing the semiconductor substrate, etc., the semiconductor substrate, etc. and the support substrate are separated. After the semiconductor substrate, etc. and the support substrate are separated, residue of the adhesive layer remaining on the semiconductor substrate, electronic device substrate, or support substrate can be removed, for example, with a cleaning composition for cleaning semiconductor substrates, etc.

[0018] A more preferred configuration of the laminate of the present invention is a laminate having a support substrate, a primer coating formed on the surface of the support substrate, a semiconductor substrate or an electronic device substrate, and an adhesive layer provided between the semiconductor substrate or the electronic device substrate and the support substrate having the primer coating on its surface. This laminate is a device peelable type laminate.

[0019] Each of the constituent elements of the laminate will be described below.

[0020] <Adhesive Layer> The adhesive layer is provided between a support substrate and a semiconductor substrate or an electronic device substrate (semiconductor substrate, etc.). The adhesive layer is in contact with, for example, a semiconductor substrate, etc. The adhesive layer is also in contact with, for example, a support substrate having a primer coating formed on its surface. The adhesive layer is formed from an adhesive composition.

[0021] The thickness of the adhesive layer provided in the laminate of the present invention is not particularly limited, but is usually 5 to 500 μm. From the viewpoint of maintaining film strength, it is preferably 10 μm or more, more preferably 20 μm or more, and even more preferably 30 μm or more. From the viewpoint of avoiding non-uniformity due to a thick film, it is preferably 200 μm or less, more preferably 150 μm or less, even more preferably 120 μm or less, and even more preferably 100 μm or less.

[0022] The method for forming the adhesive layer from the adhesive composition will be described in detail in the section explaining the method for producing the laminate.

[0023] <<Adhesive Composition>> The adhesive composition according to the present invention contains an adhesive component that cures via a hydrosilylation reaction. The adhesive composition according to the present invention preferably contains an adhesive component and a release agent component. The adhesive composition according to the present invention may contain other components.

[0024] The release agent component preferably contains polyorganosiloxane. The release agent component preferably contains two or more types of release agent components.

[0025] <<<Adhesive Component>>> The adhesive component is a component that cures via a hydrosilylation reaction. The component that cures via a hydrosilylation reaction is not particularly limited, but preferably contains a component having an alkenyl group having 2 to 40 carbon atoms bonded to a silicon atom (hereinafter sometimes referred to as "component (A-1)"), a component having a Si—H group (hereinafter sometimes referred to as "component (A-2)"), and a platinum group metal catalyst (A-3).

[0026] <<<<<Component (A-1) and Component (A-2)>>>> The adhesive composition preferably contains component (A-1). The adhesive composition preferably contains component (A-2). Hereinafter, the combination of component (A-1), component (A-2), and platinum group metal catalyst (A-3) may be referred to as "curable component (A)" or "component (A)."

[0027] From the viewpoint of optimally achieving the effects of the present invention, component (A-1) preferably contains a polyorganosiloxane (a1) having an alkenyl group having 2 to 40 carbon atoms bonded to a silicon atom. From the viewpoint of optimally achieving the effects of the present invention, component (A-2) preferably contains a polyorganosiloxane (a2) having a Si—H group. Here, the alkenyl group having 2 to 40 carbon atoms may be substituted. Examples of the substituent include a halogen atom, a nitro group, a cyano group, an amino group, a hydroxy group, a carboxyl group, an aryl group, and a heteroaryl group.

[0028] In another preferred embodiment, the adhesive composition that cures by a hydrosilylation reaction is ２ Siloxane units (Q units) represented by R １ R ２ R ３ SiO １／２ Siloxane units (M units) represented by R ４ R ５ SiO ２／２ Siloxane units (D units) represented by the formula: and R ６ SiO ３／２ and a platinum group metal catalyst (A-3), wherein the polysiloxane (A1) contains one or more units selected from the group consisting of siloxane units (T units) represented by the following formula: ２ Siloxane units (Q′ units) represented by R １ 'R ２ 'R ３ 'SiO １／２ Siloxane units (M′ units) represented by R ４ 'R ５ 'SiO ２／２ Siloxane units (D′ units) represented by the formula: ６ 'SiO ３／２ and a polyorganosiloxane (a1') containing at least one unit selected from the group consisting of M' units, D' units, and T' units, and SiO ２ Siloxane units (Q″ units) represented by R １ "R ２ "R３ "SiO １／２ Siloxane units (M″ units) represented by R ４ "R ５ "SiO ２／２ Siloxane units (D″ units) represented by the formula: ６ "SiO ３／２ and a polyorganosiloxane (a2') containing one or more units selected from the group consisting of siloxane units (T" units) represented by the following formula: and containing at least one unit selected from the group consisting of M" units, D" units, and T" units. Note that (a1') is an example of (a1), and (a2') is an example of (a2).

[0029] R １ ~R ６ are groups or atoms bonded to the silicon atom, and each independently represents an optionally substituted alkyl group, an optionally substituted alkenyl group, or a hydrogen atom. Examples of the substituent include a halogen atom, a nitro group, a cyano group, an amino group, a hydroxyl group, a carboxyl group, an aryl group, and a heteroaryl group.

[0030] R １ '~R ６ R ′ is a group bonded to a silicon atom, and each independently represents an optionally substituted alkyl group or an optionally substituted alkenyl group. １ '~R ６ At least one of the groups ' is an alkenyl group which may be substituted. Examples of the substituent include a halogen atom, a nitro group, a cyano group, an amino group, a hydroxy group, a carboxyl group, an aryl group, and a heteroaryl group.

[0031] R １ "~R ６ " are groups or atoms bonded to the silicon atom, and each independently represents an optionally substituted alkyl group or a hydrogen atom, but R １ "~R ６ At least one of " is a hydrogen atom. Examples of the substituent include a halogen atom, a nitro group, a cyano group, an amino group, a hydroxy group, a carboxyl group, an aryl group, and a heteroaryl group.

[0032] The alkyl group may be linear, branched, or cyclic, but is preferably a linear or branched alkyl group. The number of carbon atoms is not particularly limited, but is usually 1 to 40, preferably 30 or less, more preferably 20 or less, and even more preferably 10 or less.

[0033] Specific examples of the optionally substituted straight-chain or branched-chain alkyl group include a methyl group, an ethyl group, an n-propyl group, an i-propyl group, an n-butyl group, an i-butyl group, an s-butyl group, a tertiary butyl group, an n-pentyl group, a 1-methyl-n-butyl group, a 2-methyl-n-butyl group, a 3-methyl-n-butyl group, a 1,1-dimethyl-n-propyl group, a 1,2-dimethyl-n-propyl group, a 2,2-dimethyl-n-propyl group, a 1-ethyl-n-propyl group, an n-hexyl group, a 1-methyl-n-pentyl group, a 2-methyl-n-pentyl group, a 3-methyl-n-pentyl group, and a 4-methyl-n-pentyl group. Examples of such alkyl groups include, but are not limited to, a 1,1-dimethyl-n-butyl group, a 1,2-dimethyl-n-butyl group, a 1,3-dimethyl-n-butyl group, a 2,2-dimethyl-n-butyl group, a 2,3-dimethyl-n-butyl group, a 3,3-dimethyl-n-butyl group, a 1-ethyl-n-butyl group, a 2-ethyl-n-butyl group, a 1,1,2-trimethyl-n-propyl group, a 1,2,2-trimethyl-n-propyl group, a 1-ethyl-1-methyl-n-propyl group, and a 1-ethyl-2-methyl-n-propyl group, and the number of carbon atoms is usually 1 to 14, preferably 1 to 10, and more preferably 1 to 6. Of these, a methyl group is particularly preferred.

[0034] Specific examples of the optionally substituted cyclic alkyl group include a cyclopropyl group, a cyclobutyl group, a 1-methylcyclopropyl group, a 2-methylcyclopropyl group, a cyclopentyl group, a 1-methylcyclobutyl group, a 2-methylcyclobutyl group, a 3-methylcyclobutyl group, a 1,2-dimethylcyclopropyl group, a 2,3-dimethylcyclopropyl group, a 1-ethylcyclopropyl group, a 2-ethylcyclopropyl group, a cyclohexyl group, a 1-methylcyclopentyl group, a 2-methylcyclopentyl group, a 3-methylcyclopentyl group, a 1-ethylcyclobutyl group, a 2-ethylcyclobutyl group, a 3-ethylcyclobutyl group, a 1,2-dimethylcyclobutyl group, a 1,3-dimethylcyclobutyl group, a 2,2-dimethylcyclobutyl group, a 2,3-dimethylcyclobutyl group, a 2,4-dimethylcyclobutyl group, a 3,3-dimethylcyclobutyl group, a cyclopropyl ... Examples of such cycloalkyl groups include cycloalkyl groups such as 1-n-propyl-cyclobutyl group, 1-n-propyl-cyclopropyl group, 2-n-propyl-cyclopropyl group, 1-i-propyl-cyclopropyl group, 2-i-propyl-cyclopropyl group, 1,2,2-trimethyl-cyclopropyl group, 1,2,3-trimethyl-cyclopropyl group, 2,2,3-trimethyl-cyclopropyl group, 1-ethyl-2-methyl-cyclopropyl group, 2-ethyl-1-methyl-cyclopropyl group, 2-ethyl-2-methyl-cyclopropyl group, and 2-ethyl-3-methyl-cyclopropyl group; and bicycloalkyl groups such as bicyclobutyl group, bicyclopentyl group, bicyclohexyl group, bicycloheptyl group, bicyclooctyl group, bicyclononyl group, and bicyclodecyl group, but are not limited to these. The number of carbon atoms in the cycloalkyl groups is usually 3 to 14, preferably 4 to 10, and more preferably 5 to 6.

[0035] The alkenyl group may be either linear or branched, and the number of carbon atoms therein is not particularly limited, but is usually 2 to 40, preferably 30 or less, more preferably 20 or less, and even more preferably 10 or less.

[0036] Specific examples of optionally substituted linear or branched alkenyl groups include, but are not limited to, vinyl, allyl, butenyl, and pentenyl groups, and the number of carbon atoms is usually 2 to 14, preferably 2 to 10, and more preferably 1 to 6. Of these, ethenyl and 2-propenyl groups are particularly preferred. Specific examples of optionally substituted cyclic alkenyl groups include, but are not limited to, cyclopentenyl and cyclohexenyl, and the number of carbon atoms is usually 4 to 14, preferably 5 to 10, and more preferably 5 to 6.

[0037] As described above, the polysiloxane (A1) contains the polyorganosiloxane (a1') and the polyorganosiloxane (a2'), and the alkenyl group contained in the polyorganosiloxane (a1') and the hydrogen atom (Si-H group) contained in the polyorganosiloxane (a2') form a crosslinked structure through a hydrosilylation reaction with the platinum group metal catalyst (A-3), and the crosslinked structure is cured. As a result, a cured film is formed.

[0038] The polyorganosiloxane (a1') contains one or more units selected from the group consisting of Q' units, M' units, D' units and T' units, and also contains at least one unit selected from the group consisting of M' units, D' units and T' units. As the polyorganosiloxane (a1'), two or more polyorganosiloxanes satisfying these conditions may be used in combination.

[0039] Preferred combinations of two or more selected from the group consisting of Q' units, M' units, D' units and T' units include, but are not limited to, (Q' units and M' units), (D' units and M' units), (T' units and M' units), and (Q' units, T' units and M' units).

[0040] In addition, when two or more types of polyorganosiloxanes are included in the polyorganosiloxane (a1'), a combination of (Q' units and M' units) and (D' units and M' units), a combination of (T' units and M' units) and (D' units and M' units), a combination of (Q' units, T' units and M' units) and (T' units and M' units) is preferred, but is not limited to these.

[0041] The polyorganosiloxane (a2') contains one or more units selected from the group consisting of Q" units, M" units, D" units, and T" units, and also contains at least one unit selected from the group consisting of M" units, D" units, and T" units. As the polyorganosiloxane (a2'), two or more polyorganosiloxanes satisfying these conditions may be used in combination.

[0042] Preferred combinations of two or more selected from the group consisting of Q" units, M" units, D" units and T" units include, but are not limited to, (M" units and D" units), (Q" units and M" units), and (Q" units, T" units and M" units).

[0043] The polyorganosiloxane (a1') is composed of siloxane units in which alkyl groups and / or alkenyl groups are bonded to the silicon atoms thereof. １ '~R ６ The proportion of alkenyl groups in all the substituents represented by R ′ is preferably 0.1 to 50.0 mol %, more preferably 0.5 to 30.0 mol %, and the remaining R １ '~R ６ ' can be an alkyl group.

[0044] The polyorganosiloxane (a2') is composed of siloxane units in which an alkyl group and / or a hydrogen atom is bonded to the silicon atom. １ "~R ６ The proportion of hydrogen atoms in all the substituents and substituted atoms represented by R １ "~R ６ " can be an alkyl group.

[0045] When the adhesive composition contains (a1) and (a2), in a preferred embodiment of the present invention, the molar ratio of the alkenyl groups contained in the polyorganosiloxane (a1) to the hydrogen atoms constituting the Si—H bonds contained in the polyorganosiloxane (a2) is in the range of 1.0:0.5 to 1.0:0.66.

[0046] The weight average molecular weight of polysiloxanes such as polyorganosiloxane (a1) and polyorganosiloxane (a2) is not particularly limited, but is usually 500 to 1,000,000, and from the viewpoint of realizing the effects of the present invention with good reproducibility, it is preferably 5,000 to 50,000. In the present invention, the weight average molecular weight, number average molecular weight, and dispersity of the polyorganosiloxane can be measured using, for example, a GPC apparatus (EcoSEC, HLC-8320GPC manufactured by Tosoh Corporation) and a GPC column (TSKgel SuperMultiporeHZ-N, TSKgel SuperMultiporeHZ-H manufactured by Tosoh Corporation), a column temperature of 40 ° C., tetrahydrofuran as an eluent (elution solvent), a flow rate (flow rate) of 0.35 mL / min, and polystyrene (Shodex manufactured by Showa Denko K.K.) as a standard sample.

[0047] The viscosities of the polyorganosiloxane (a1) and the polyorganosiloxane (a2) are not particularly limited, but are usually 10 to 1,000,000 (mPa s), and from the viewpoint of realizing the effects of the present invention with good reproducibility, are preferably 50 to 10,000 (mPa s). The viscosities of the polyorganosiloxane (a1) and the polyorganosiloxane (a2) are values ​​measured at 25 ° C. using an E-type rotational viscometer.

[0048] Polyorganosiloxane (a1) and polyorganosiloxane (a2) react with each other via a hydrosilylation reaction, and therefore the curing mechanism is different from that via, for example, silanol groups, and therefore neither siloxane needs to contain a silanol group or a functional group that forms a silanol group upon hydrolysis, such as an alkyloxy group.

[0049] <<<<<Platinum Group Metal Catalyst (A-3)>>>> The platinum group metal catalyst is a platinum-based metal catalyst that promotes the hydrosilylation reaction between an alkenyl group and a Si—H group.

[0050] Specific examples of platinum-based metal catalysts that can be used include known platinum-based compounds (platinum or compounds containing platinum). Specific examples include platinum fine powder, platinum black, chloroplatinic acid, alcohol-modified chloroplatinic acid, complexes of chloroplatinic acid and diolefins, platinum-olefin complexes, platinum-carbonyl complexes (platinum bis(acetoacetate), platinum bis(acetylacetonate), etc.), chloroplatinic acid-alkenylsiloxane complexes (chloroplatinic acid-divinyltetramethyldisiloxane complex, chloroplatinic acid-tetravinyltetramethylcyclotetrasiloxane complex, etc.), platinum-alkenylsiloxane complexes (platinum-divinyltetramethyldisiloxane complex, platinum-tetravinyltetramethylcyclotetrasiloxane complex, etc.), and complexes of chloroplatinic acid and acetylene alcohols. Among these, platinum-alkenylsiloxane complexes are particularly preferred due to their high hydrosilylation reaction-accelerating effect. These hydrosilylation reaction catalysts may be used either individually or in combination of two or more.

[0051] The alkenylsiloxane used in the platinum-alkenylsiloxane complex is not particularly limited, and examples thereof include 1,3-divinyl-1,1,3,3-tetramethyldisiloxane, 1,3,5,7-tetramethyl-1,3,5,7-tetravinylcyclotetrasiloxane, alkenylsiloxane oligomers in which some of the methyl groups of these alkenylsiloxanes have been substituted with ethyl groups, phenyl groups, etc., and alkenylsiloxane oligomers in which the vinyl groups of these alkenylsiloxanes have been substituted with allyl groups, hexenyl groups, etc. 1,3-divinyl-1,1,3,3-tetramethyldisiloxane is particularly preferred because the resulting platinum-alkenylsiloxane complex has good stability.

[0052] The content of the platinum group metal catalyst (A-3) in the adhesive composition is not particularly limited, but is, for example, in the range of 0.1 to 50.0 ppm relative to the total mass of component (A-1) and component (A-2).

[0053] <<<<<Polymerization Inhibitor>>>> The adhesive component may contain a polymerization inhibitor for the purpose of inhibiting the progress of the hydrosilylation reaction. The polymerization inhibitor is not particularly limited as long as it can inhibit the progress of the hydrosilylation reaction, and specific examples include alkynyl alcohols such as 1-ethynyl-1-cyclohexanol and 1,1-diphenyl-2-propyn-1-ol. The amount of the polymerization inhibitor is not particularly limited, but, for example, relative to the total amount of polyorganosiloxane (a1) and polyorganosiloxane (a2), it is usually 1,000.0 ppm or more from the viewpoint of obtaining the effect, and 10,000.0 ppm or less from the viewpoint of preventing excessive inhibition of the hydrosilylation reaction.

[0054] <<<Release Agent Component>>> The release agent component is not particularly limited, but from the viewpoint of more suitably obtaining the effects of the present invention, polyorganosiloxane is preferred. The polyorganosiloxane used as the release agent component usually does not react with the adhesive component. For example, the polyorganosiloxane used as the release agent component is a component that does not undergo a hydrosilylation reaction.

[0055] The polyorganosiloxane is not particularly limited, and examples thereof include polydimethylsiloxane, epoxy group-containing polyorganosiloxane, phenyl group-containing polyorganosiloxane, and carbinol-modified polyorganosiloxane.

[0056] In order to more effectively obtain the effects of the present invention, the two or more release agent components preferably contain two or more polyorganosiloxanes. The two or more polyorganosiloxanes referred to as "two or more polyorganosiloxanes" include, for example, a combination of polydimethylsiloxane and epoxy group-containing polyorganosiloxane, a combination of polydimethylsiloxane and phenyl group-containing polyorganosiloxane, and a combination of phenyl group-containing polyorganosiloxane and epoxy group-containing polyorganosiloxane, but do not refer to a combination of two epoxy group-containing polyorganosiloxanes that differ in molecular weight, viscosity, type of epoxy group, etc.

[0057] Examples of two of the two or more release agent components include the following combinations: A combination of polydimethylsiloxane and an epoxy group-containing polyorganosiloxane A combination of polydimethylsiloxane and a phenyl group-containing polyorganosiloxane A combination of polydimethylsiloxane and a carbinol-modified polyorganosiloxane A combination of epoxy group-containing polyorganosiloxane and a phenyl group-containing polyorganosiloxane A combination of epoxy group-containing polyorganosiloxane and a carbinol-modified polyorganosiloxane A combination of phenyl group-containing polyorganosiloxane and a carbinol-modified polyorganosiloxane Of these combinations, the combination of polydimethylsiloxane and an epoxy group-containing polyorganosiloxane is preferred as it is most likely to achieve the effects of the present invention.

[0058] <<<<<Polydimethylsiloxane>>>> The polydimethylsiloxane contained in the adhesive composition is not particularly limited. Polydimethylsiloxane is a component that does not undergo a hydrosilylation reaction. The "polydimethylsiloxane" in the present invention is an unmodified polyorganosiloxane that differs from epoxy group-containing polydimethylsiloxanes, phenyl group-containing polydimethylsiloxanes, etc., and has methyl groups as organic groups bonded to silicon atoms.

[0059] Specific examples of polydimethylsiloxane include, but are not limited to, those represented by formula (M1).

[0060] (n ４ indicates the number of repeating units and is a positive integer.)

[0061] The weight-average molecular weight of the polydimethylsiloxane is not particularly limited, but is typically 100,000 to 2,000,000. From the viewpoint of reproducibly achieving the effects of the present invention, it is preferably 200,000 to 1,200,000, and more preferably 300,000 to 900,000. The dispersity is also not particularly limited, but is typically 1.0 to 10.0. From the viewpoint of reproducibly achieving suitable release, it is preferably 1.5 to 5.0, and more preferably 2.0 to 3.0. The weight-average molecular weight and dispersity can be measured using the method described above for polyorganosiloxane as an adhesive component. The viscosity of the polydimethylsiloxane is not particularly limited, but is typically 1,000 to 2,000,000 mm ２ The viscosity value of polydimethylsiloxane is expressed as kinematic viscosity, and is expressed as centistokes (cSt) = mm ２ Viscosity (mPa s) is converted to density (g / cm ３ That is, the value can be calculated from the viscosity and density measured with an E-type rotational viscometer at 25°C, and the kinematic viscosity (mm ２ / s)=viscosity (mPa・s) / density (g / cm ３ ) can be calculated using the formula:

[0062] <<<<Epoxy Group-Containing Polyorganosiloxane>>>> The epoxy group-containing polyorganosiloxane contained in the adhesive composition is not particularly limited. The epoxy group-containing polyorganosiloxane is a component that does not undergo a hydrosilylation reaction.

[0063] Examples of epoxy group-containing polyorganosiloxanes include R １１ R １２ SiO ２／２ The siloxane unit (D １０ Examples include those containing units.

[0064] R １１ is a group bonded to a silicon atom and represents an alkyl group; R １２is a group bonded to a silicon atom and represents an epoxy group or an organic group containing an epoxy group, and specific examples of the alkyl group include those listed above. The epoxy group in the organic group containing an epoxy group may be an independent epoxy group that is not condensed with another ring, or may be an epoxy group that forms a condensed ring with another ring, such as a 1,2-epoxycyclohexyl group. Specific examples of organic groups containing an epoxy group include, but are not limited to, 3-glycidoxypropyl and 2-(3,4-epoxycyclohexyl)ethyl. In the present invention, a preferred example of the epoxy group-containing polyorganosiloxane is, but is not limited to, epoxy group-containing polydimethylsiloxane.

[0065] The epoxy group-containing polyorganosiloxane contains the above-mentioned siloxane unit (D １０ units), but D １０ In addition to the units, the epoxy group-containing polyorganosiloxane may contain Q units, M units and / or T units. In a preferred embodiment of the present invention, specific examples of the epoxy group-containing polyorganosiloxane include D １０ Polyorganosiloxane consisting only of units, D １０ polyorganosiloxanes containing D units and Q units; １０ Polyorganosiloxanes containing D units and M units, １０ Polyorganosiloxanes containing D units and T units, １０ polyorganosiloxanes containing units, Q units and M units, １０ Polyorganosiloxanes containing units, M units and T units, D １０ Examples of suitable organosiloxanes include polyorganosiloxanes containing Q units, M units, and T units.

[0066] The epoxy group-containing polyorganosiloxane is preferably an epoxy group-containing polydimethylsiloxane having an epoxy value of 0.1 to 5. The weight average molecular weight thereof is not particularly limited, but is usually 1,500 to 500,000, and from the viewpoint of suppressing precipitation in the composition, it is preferably 100,000 or less.

[0067] Specific examples of epoxy group-containing polyorganosiloxanes include, but are not limited to, those represented by formulas (E1) to (E3).

[0068] (m １ and n １ indicates the number of each repeating unit and is a positive integer.)

[0069] (m ２ and n ２ indicates the number of each repeating unit and is a positive integer, and R is an alkylene group having 1 to 10 carbon atoms which may be interrupted by at least one of an oxygen atom and an unsaturated bond (e.g., a carbon-carbon double bond, a carbon-carbon triple bond, or -N=N-).

[0070] (m ３ , n ３ and ３ indicates the number of each repeating unit and is a positive integer, and R is an alkylene group having 1 to 10 carbon atoms which may be interrupted by at least one of an oxygen atom and an unsaturated bond (e.g., a carbon-carbon double bond, a carbon-carbon triple bond, or -N=N-).

[0071] In the above general formula, m １ , m ２ , m ３ , and o ３ When the number of repeating units is two or more, the repeating units may be arranged adjacent to each other to form a block, or may be arranged randomly.

[0072] Since the polyorganosiloxane represented by formula (E3) has an epoxy group and a phenyl group, it is an epoxy group-containing polyorganosiloxane and also a phenyl group-containing polyorganosiloxane. The epoxy group-containing polyorganosiloxane may or may not have a phenyl group.

[0073] The weight-average molecular weight of the epoxy group-containing polyorganosiloxane is not particularly limited, but is typically 100,000 to 2,000,000. From the viewpoint of reproducibly achieving the effects of the present invention, it is preferably 200,000 to 1,200,000, more preferably 300,000 to 900,000. Furthermore, its dispersity is not particularly limited, but is typically 1.0 to 10.0. From the viewpoint of reproducibly achieving suitable release, it is preferably 1.5 to 5.0, more preferably 2.0 to 3.0. The weight-average molecular weight and dispersity can be measured using the method described above for polyorganosiloxanes as adhesive components. The viscosity of the epoxy group-containing polyorganosiloxane is not particularly limited, but is typically 1,000 to 2,000,000 mm ２ The viscosity value of the epoxy group-containing polyorganosiloxane is expressed as a kinematic viscosity, and is expressed as centistokes (cSt) = mm ２ Viscosity (mPa s) is converted to density (g / cm ３ That is, the value can be calculated from the viscosity and density measured with an E-type rotational viscometer at 25°C, and the kinematic viscosity (mm ２ / s)=viscosity (mPa・s) / density (g / cm ３ ) can be calculated using the formula:

[0074] <<<<<Phenyl Group-Containing Polyorganosiloxane>>>> Examples of the phenyl group-containing polyorganosiloxane include R ３１ R ３２ SiO ２／２ The siloxane unit (D ３０ Examples include those containing units.

[0075] R ３１ is a group bonded to a silicon atom and represents a phenyl group or an alkyl group; R ３２ is a group bonded to a silicon atom, and represents a phenyl group. Specific examples of the alkyl group include those listed above, with a methyl group being preferred.

[0076] The phenyl group-containing polyorganosiloxane contains the above-mentioned siloxane unit (D ３０ units), but D３０ In addition to units, Q units, M units and / or T units may be included.

[0077] In a preferred embodiment, specific examples of the phenyl group-containing polyorganosiloxane include D ３０ Polyorganosiloxane consisting only of units, D ３０ polyorganosiloxanes containing D units and Q units; ３０ Polyorganosiloxanes containing D units and M units, ３０ Polyorganosiloxanes containing D units and T units, ３０ polyorganosiloxanes containing units, Q units and M units, ３０ Polyorganosiloxanes containing units, M units and T units, D ３０ Examples of suitable polyorganosiloxanes include polyorganosiloxanes containing Q, M, and T units.

[0078] Specific examples of the phenyl group-containing polyorganosiloxane include, but are not limited to, those represented by formula (P1) or (P2).

[0079] (m5 and n5 represent the number of each repeating unit and are positive integers.)

[0080] (m6 and n6 represent the number of each repeating unit and are positive integers.)

[0081] In the above general formula, m ５ , and m ６ When the number of repeating units is two or more, the repeating units may be arranged adjacent to each other to form a block, or may be arranged randomly.

[0082] <<<<Carbinol-Modified Polyorganosiloxane>>>> The carbinol-modified polyorganosiloxane is not particularly limited. The carbinol-modified polyorganosiloxane is a polyorganosiloxane having a hydroxy group directly bonded to a carbon atom. Thus, the carbinol in "carbinol-modified polyorganosiloxane" is not limited to methanol in the narrow sense, but also includes methanol derivatives.

[0083] The carbinol-modified polyorganosiloxane is, for example, a carbinol-modified polydimethylsiloxane.

[0084] The number of hydroxy groups directly bonded to carbon atoms in the carbinol-modified polyorganosiloxane is not particularly limited, and may be one or two or more.

[0085] The carbinol-modified polyorganosiloxane may have a hydroxy group bonded directly to a carbon atom in the side chain, or may have a hydroxy group bonded directly to a carbon atom at one end, or may have hydroxy groups bonded directly to a carbon atom at both ends. The carbinol-modified polyorganosiloxane preferably has a hydroxy group bonded directly to a carbon atom in the side chain. In this case, even if the content of the carbinol-modified polyorganosiloxane is small, the adhesive layer formed from the adhesive composition can be imparted with good releasability.

[0086] The carbinol-modified polyorganosiloxane has, for example, a group represented by the following formula (Cg) as a group directly bonded to a silicon atom.

[0087] (In formula (Cg), R １ represents a group having one or more carbon atoms. * represents a bond bonded to a silicon atom. However, the hydroxy group in formula (Cg) is directly bonded to a carbon atom.

[0088] The number of hydroxy groups directly bonded to a carbon atom in the group represented by formula (Cg) may be 1 or 2 or more. Examples of 2 or more include 2, 3, and 4.

[0089] R １ The number of carbon atoms is not particularly limited, and may be, for example, 1 to 30, 1 to 20, or 1 to 10.

[0090] Examples of the group represented by formula (Cg) include groups represented by the following formulae (Cg-1) to (Cg-4). (In formula (Cg-1), R １１represents an alkylene group having 1 to 6 carbon atoms which may be substituted with an alkoxy group having 1 to 3 carbon atoms. １２ represents an alkylene group having 1 to 6 carbon atoms. １３ represents an alkylene group having 1 to 6 carbon atoms which may be substituted with an alkoxy group having 1 to 3 carbon atoms or a hydroxy group. １４ represents an alkylene group having 1 to 6 carbon atoms. １５ represents an alkylene group having 1 to 3 carbon atoms, and m represents an integer of 1 to 10. In formula (Cg-4), R １６ ~R １８ each independently represents an alkylene group having 1 to 6 carbon atoms. In formulas (Cg-1) to (Cg-4), * represents a bond bonded to a silicon atom.

[0091] R １１ ~R １８ The alkylene group may be linear, branched, or cyclic.

[0092] Examples of the group represented by formula (Cg) include the following groups. (In the formula, m1 represents an integer of 2 to 10. * represents a bond bonded to a silicon atom.)

[0093] The carbinol-modified polyorganosiloxane is represented, for example, by the following formula (CPS-1) or formula (CPS-2). (In formula (CPS-1), R ５１ Each of X independently represents a hydrocarbon group. １ represents a group represented by the above formula (Cg). n1 represents an integer of 0 or more. n2 represents an integer of 1 or more. In formula (CPS-2), R ５２ Each of X independently represents a hydrocarbon group. ２ represents a group represented by the above formula (Cg). ３ represents a hydrocarbon group or a group represented by the above formula (Cg); and n3 represents an integer of 0 or more.

[0094] R ５１ , R ５２ , and X ３Examples of the hydrocarbon group in the formula (CPS-1a) include alkyl groups having 1 to 8 carbon atoms. As the alkyl group having 1 to 8 carbon atoms, a methyl group is preferred. That is, the carbinol-modified polyorganosiloxane is preferably a polydimethylsiloxane represented by the following formula (CPS-1a) or formula (CPS-2a). (In formula (CPS-1a), X １ represents a group represented by the above formula (Cg). n1 represents an integer of 0 or more. n2 represents an integer of 1 or more. In formula (CPS-2a), X ２ represents a group represented by the above formula (Cg). ３ represents a methyl group or a group represented by the above formula (Cg); and n3 represents an integer of 0 or more.

[0095] The carbinol-modified polyorganosiloxane represented by formula (CPS-1) and the carbinol-modified polydimethylsiloxane represented by formula (CPS-1a) have hydroxy groups directly bonded to carbon atoms in their side chains. The carbinol-modified polyorganosiloxane represented by formula (CPS-2) and the carbinol-modified polydimethylsiloxane represented by formula (CPS-2a) have hydroxy groups directly bonded to carbon atoms at one or both ends.

[0096] In the carbinol-modified polyorganosiloxane represented by formula (CPS-1), when n2 is 2 or more, -Si(R ５１ ) (X １ The siloxane units represented by —Si(CH )—O— may be arranged adjacent to each other to form a block, or may be arranged randomly. In the carbinol-modified polydimethylsiloxane represented by formula (CPS-1a), when n2 is 2 or more, ３ ) (X １ The siloxane units represented by —O— may be arranged adjacent to each other to form a block, or may be arranged randomly.

[0097] The weight average molecular weight of the carbinol-modified polyorganosiloxane is not particularly limited, but is usually 500 to 1,000,000, and from the viewpoint of reproducibly realizing the effects of the present invention, it is preferably 5,000 to 50,000. The degree of dispersion is also not particularly limited, but is usually 1.0 to 10.0, and from the viewpoint of reproducibly realizing suitable release, it is preferably 1.5 to 5.0, more preferably 2.0 to 3.0. The viscosity of the carbinol-modified polyorganosiloxane is not particularly limited, but is usually 100 to 200,000 mm ２ The viscosity value of polydimethylsiloxane is expressed as kinematic viscosity, and is expressed as centistokes (cSt) = mm ２ Viscosity (mPa s) is converted to density (g / cm ３ That is, the value can be calculated from the viscosity and density measured with an E-type rotational viscometer at 25°C, and the kinematic viscosity (mm ２ / s)=viscosity (mPa・s) / density (g / cm ３ ) can be calculated using the formula:

[0098] The polyorganosiloxane that is the release agent component (B) may be a commercially available product or may be synthesized. Commercially available polyorganosiloxanes include, for example, WACKERSILICONE FLUID AK series (AK50, AK 350, AK 1000, AK 10000, AK 1000000) and GENIOPLAST GUM, manufactured by Wacker Chemie, dimethyl silicone oil (KF-96L, KF-96A, KF-96, KF-96H, KF-69, KF-965, KF-968), cyclic dimethyl silicone oil (KF-995) manufactured by Shin-Etsu Chemical Co., Ltd.; epoxy group-containing polyorganosiloxane (trade names CMS-227, ECMS-327, EMS-622) manufactured by Gelest, and Shin-Etsu Chemical Co., Ltd. Epoxy group-containing polyorganosiloxanes (KF-101, KF-1001, KF-1005, X-22-343), epoxy group-containing polyorganosiloxanes (DOWSIL BY16-839, DOWSIL8413, DOWSIL8411) manufactured by Dow-Toray Industries, Inc.; phenyl group-containing polyorganosiloxanes (PMM-1043, PMM-1025, PDM-0421, PDM-0821) manufactured by Gelest, phenyl group-containing polyorganosiloxane (KF50-3000CS) manufactured by Shin-Etsu Chemical Co., Ltd., and phenyl group-containing polyorganosiloxanes (TSF431, TSF433) manufactured by MOMENTIVE, but are not limited to these.

[0099] Commercially available carbinol-modified polyorganosiloxanes include, for example, KF6000, KF6001, KF6002, KF6003, X-22-4039, and X-22-4015 manufactured by Shin-Etsu Silicone Co., Ltd.; DMS-C15, DMS-C16, DMS-C21, DMS-C23, DBE-C25, DBE-C22, DMS-CA21, DMS-CS26, CMS-221, CMS-222, CMS-832, CMS-626, MCR-C12, MCR-C18, MCR-C22, MCS-C11, MCS-C13, MCR-C61, MCR-C62, and MCR-C63 manufactured by Gelest; and DOWSIL BY 16-201, DOWSIL SF 8427 Fluid, DOWSIL SF 8428 Fluid, etc.

[0100] The content of the release agent component in the adhesive composition is not particularly limited, but from the viewpoint of suitably obtaining the effects of the present invention, it is preferably 0.01% by mass or more, more preferably 0.05% by mass or more, and particularly preferably 0.10% by mass or more, relative to the non-volatile content of the adhesive composition. The upper limit is not particularly limited, but is, for example, preferably 30% by mass or less, more preferably 25% by mass or less, and particularly preferably 20% by mass or less. The non-volatile content of the adhesive composition refers to components other than the solvent in the adhesive composition.

[0101] When the adhesive composition contains polydimethylsiloxane, the content of polydimethylsiloxane in the adhesive composition is not particularly limited, but from the viewpoint of preferably obtaining the effects of the present invention, the content is preferably 0.5% by mass to 30% by mass, more preferably 1% by mass to 10% by mass, and particularly preferably 2% by mass to 8% by mass, relative to the adhesive component. Note that the adhesive component here does not include a solvent.

[0102] When the adhesive composition contains an epoxy group-containing polyorganosiloxane, the content of the epoxy group-containing polyorganosiloxane in the adhesive composition is not particularly limited, but from the viewpoint of preferably obtaining the effects of the present invention, it is preferably 0.05% by mass to 30% by mass, more preferably 0.1% by mass to 5% by mass, and particularly preferably 0.2% by mass to 3% by mass, relative to the adhesive component. Note that the adhesive component here does not include a solvent.

[0103] When the adhesive composition contains polydimethylsiloxane and epoxy group-containing polyorganosiloxane, the mass ratio (B-1:B-2) of the polydimethylsiloxane (B-1) to the epoxy group-containing polyorganosiloxane (B-2) in the adhesive composition is not particularly limited, but from the viewpoint of suitably obtaining the effects of the present invention, it is preferably 20:1 to 1:10, more preferably 15:1 to 1:7.5, and particularly preferably 15:1 to 5:1.

[0104] The total proportion of polydimethylsiloxane and epoxy group-containing polyorganosiloxane relative to the adhesive component in the adhesive composition is not particularly limited, but from the viewpoint of optimally obtaining the effects of the present invention, it is preferably 1% by mass to 30% by mass, more preferably 2% by mass to 10% by mass, and particularly preferably 3% by mass to 8% by mass. Note that the adhesive component here does not include the solvent.

[0105] <<<Solvent>>> The adhesive composition may contain a solvent for purposes such as adjusting viscosity. Specific examples include, but are not limited to, aliphatic hydrocarbons, aromatic hydrocarbons, and ketones. More specific examples include, but are not limited to, hexane, heptane, octane, nonane, decane, undecane, dodecane, isododecane, menthane, limonene, toluene, xylene, methylene, cumene, MIBK (methyl isobutyl ketone), butyl acetate, diisobutyl ketone, 2-octanone, 2-nonanone, and 5-nonanone. Such solvents may be used alone or in combination of two or more.

[0106] When the adhesive composition contains a solvent, the content of the solvent is appropriately set taking into consideration the desired viscosity of the composition, the coating method to be used, the thickness of the thin film to be produced, and the like, but is, for example, in the range of about 10 to 90 mass % relative to the entire composition.

[0107] The viscosity of the adhesive composition used in the present invention is not particularly limited, but is usually 500 to 20,000 mPa·s, and preferably 1,000 to 1,0000 mPa·s at 25°C.

[0108] An example of the adhesive composition used in the present invention can be produced by mixing the adhesive component (A), the release agent component (B), and a solvent. The mixing order is not particularly limited, but examples of methods that can easily and reproducibly produce an adhesive composition include, but are not limited to, a method of dissolving the adhesive component (A) and the release agent component (B) in a solvent, or a method of dissolving a portion of the adhesive component (A) and the remaining portion of the release agent component (B) in a solvent and then mixing the resulting solutions. When preparing the adhesive composition, heating may be performed as appropriate within a range that does not cause decomposition or deterioration of the components. In the present invention, the solvent, solution, etc. used may be filtered using a filter or the like during the production of the adhesive composition or after mixing all of the components in order to remove foreign matter.

[0109] <Primer film> The primer film is formed on the surface of the substrate on the side opposite to the adhesive layer where a peel interface is desired to be formed. Here, the substrate on which the primer film is formed can be a support substrate, a semiconductor substrate, or an electronic device substrate (semiconductor substrate, etc.). When interfacial peeling is desired to occur at the interface between the semiconductor substrate or electronic device substrate (semiconductor substrate, etc.) and the adhesive layer (in the case of device peeling), the primer film is formed on the surface of the support substrate. On the other hand, when interfacial peeling is desired to occur at the interface between the support substrate and the adhesive layer (in the case of carrier peeling), the primer film is formed on the surface of the semiconductor substrate or electronic device substrate (semiconductor substrate, etc.).

[0110] The primer coating is provided to enhance the adhesive strength between the substrate and an adhesive layer formed from an adhesive composition containing an adhesive component that cures by a hydrosilylation reaction.

[0111] The primer film is formed from a primer film-forming composition.

[0112] <<Primer Film-Forming Composition>> The primer film-forming composition according to the present invention contains a component that further accelerates the hydrosilylation reaction used in forming an adhesive layer, i.e., a component that contributes to the hydrosilylation reaction. Because the primer film-forming composition has the function of increasing the adhesive strength between the adhesive layer and a substrate having a primer film on its surface, in this specification the primer film-forming composition is also referred to as an adhesion aid composition.

[0113] Examples of the component that contributes to the hydrosilylation reaction include a component selected from the group consisting of a platinum-containing compound, a Si—H group-containing compound, and a vinyl group-containing compound.

[0114] Examples of the platinum-containing compound include platinum group metals or compounds containing platinum group metals. Examples of the platinum-containing compound may be, for example, a supported hydrosilylation catalyst comprising a solid support having a platinum group metal on its surface. Examples of supported catalysts include, but are not limited to, platinum on carbon, palladium on carbon, ruthenium on carbon, rhodium on carbon, platinum on silica, palladium on silica, platinum on alumina, palladium on alumina, and ruthenium on alumina.

[0115] The platinum-containing compound may be, for example, a photoactivatable hydrosilylation catalyst capable of initiating curing by irradiation and / or heating. Photoactivatable hydrosilylation catalyst refers to, for example, any hydrosilylation catalyst capable of catalyzing a hydrosilylation reaction upon exposure to radiation, particularly those having wavelengths between 150 and 800 nanometers (nm). The suitability of a particular photoactivatable hydrosilylation catalyst for use in the compositions of the present invention can be readily determined by routine experimentation.

[0116] Specific examples of the photoactivatable hydrosilylation catalyst include platinum(II) β-diketonate complexes such as platinum(II) bis(2,4-pentanedioate), platinum(II) bis(2,4-hexanedioate), platinum(II) bis(2,4-heptanedioate), platinum(II) bis(1-phenyl-1,3-butanedioate), platinum(II) bis(1,3-diphenyl-1,3-propanedioate), and platinum(II) bis(1,1,1,5,5,5-hexafluoro-2,4-pentanedioate); (h-cyclopentadienyl)trialkylplatinum complexes such as (Cp)trimethylplatinum, (Cp)ethyldimethylplatinum, (Cp)triethylplatinum, (chloro-Cp)trimethylplatinum, and (trimethylsilyl-Cp)trimethylplatinum, where Cp represents cyclopentadienyl; [Pt[C ６ H ５ NNNOCH ３ ] ４ , Pt[p-CN-C ６ H ４ NNNOC ６ H １１ ] ４ , Pt[p-H ３ COC ６ H ４ NNNOC ６ H １１ ] ４ , Pt[p-CH ３ (CH ２ ) ｘ -C ６ H ４ NNNOCH ３ ] ４ , 1,5-cyclooctadiene Pt[p-CN-C ６ H ４ NNNOC ６ H １１ ] ２ , 1,5-cyclooctadiene Pt[p-CH ３ O-C ６ H ４ NNNOCH ３ ] ２ , [(C ６ H ５ ) ３ P] ３ Rh[p-CN-C ６ H ４NNNOC ６ H １１ ], and Pd[p-CH ３ (CH ２ ) ｘ -C ６ H ４ NNNOCH ３ ] ２ wherein x is 1, 3, 5, 11, or 17; ４ -1,5-cyclooctadienyl)diphenylplatinum, (h ４ -1,3,5,7-cyclooctatetraenyl)diphenylplatinum, (h ４ -2,5-norborazienyl)diphenylplatinum, (h ４ -1,5-cyclooctadienyl)bis-(4-dimethylaminophenyl)platinum, (h ４ -1,5-cyclooctadienyl)bis-(4-acetylphenyl)platinum, and (h ４ Photoactivatable hydrosilylation catalysts include, but are not limited to, (h-diolefin)(σ-aryl)platinum complexes such as (h-diolefin)(σ-aryl)platinum complexes, such as (h-diolefin)(σ-aryl)platinum (1,5-cyclooctadienyl)bis-(4-trifluoromethylphenyl)platinum. Typically, the photoactivatable hydrosilylation catalyst is a Pt(II) β-diketonate complex, and more typically, the catalyst is platinum(II) bis(2,4-pentanedioate).

[0117] The compound containing an Si-H group is not particularly limited as long as it contains an Si-H group, and examples thereof include compounds having a weight average molecular weight (Mw) of 100 or more and 400,000 or less. Furthermore, compounds containing two or more Si-H groups per molecule are preferred. The compound containing an Si-H group may be a linear compound or a cyclic compound, and, for example, cyclic compounds are preferred in consideration of solubility in a solvent.

[0118] The vinyl group-containing compound is not particularly limited as long as it contains a vinyl group, and examples thereof include compounds having a weight average molecular weight (Mw) of 100 or more and 400,000 or less. In addition, compounds containing two or more vinyl groups in one molecule are preferred.

[0119] The platinum-containing compound, the Si—H group-containing compound, and the vinyl group-containing compound may be, for example, the adhesive components described above in the section “Adhesive Components” in “Adhesive Composition.”

[0120] Preferred embodiments of the component that contributes to the hydrosilylation reaction include, but are not limited to, platinum-containing compounds and Si—H group-containing compounds represented by the following formulae (X-1) to (X-4), which are also used in the following examples.

[0121] The primer coating composition can be prepared by mixing components that contribute to the hydrosilylation reaction with a solvent, such as propylene glycol monomethyl ether or propylene glycol monomethyl ether acetate.

[0122] The method for forming a primer film from a primer film-forming composition is not particularly limited, but examples thereof include a method of forming a primer film by applying the primer film-forming composition. The method for applying the primer film-forming composition is not particularly limited, but is usually a spin coating method.

[0123] <Support Substrate> The support substrate is not particularly limited as long as it is a member that can support the semiconductor substrate when the semiconductor substrate is processed, and examples thereof include a glass support substrate and a silicon support substrate.

[0124] The shape of the support substrate is not particularly limited, but may be, for example, a disk shape. The disk-shaped support substrate does not need to have a perfectly circular surface; for example, the outer periphery of the support substrate may have a straight line portion called an orientation flat, or a notch. The thickness of the disk-shaped support substrate may be determined appropriately depending on the size of the semiconductor substrate, etc., and is not particularly limited, but is, for example, 500 to 1,000 μm. The diameter of the disk-shaped support substrate may be determined appropriately depending on the size of the semiconductor substrate, etc., and is not particularly limited, but is, for example, 100 to 1,000 mm.

[0125] An example of the support substrate is a glass wafer having a diameter of about 300 mm and a thickness of about 700 μm.

[0126] When the peeling of the laminate is performed by light irradiation, for example, a substrate that is optically transparent to the light used is used as the support substrate.

[0127] <Semiconductor Substrate or Electronic Device Substrate> <<Semiconductor Substrate>> The main material constituting the entire semiconductor substrate is not particularly limited as long as it is suitable for this type of application, and examples thereof include silicon, silicon carbide, compound semiconductors, and glass substrates with organic resins. The shape of the semiconductor substrate is not particularly limited, and may be, for example, a disk. Note that the surface of a disk-shaped semiconductor substrate does not need to be perfectly circular; for example, the outer periphery of the semiconductor substrate may have a linear portion called an orientation flat or a notch. The thickness of the disk-shaped semiconductor substrate may be determined appropriately depending on the intended use of the semiconductor substrate, and is not particularly limited, and is, for example, 500 to 1,000 μm. The diameter of the disk-shaped semiconductor substrate may be determined appropriately depending on the intended use of the semiconductor substrate, and is not particularly limited, and is, for example, 100 to 1,000 mm.

[0128] The semiconductor substrate may have bumps. Bumps are protruding terminals. In a laminate, when the semiconductor substrate has bumps, the bumps are located on the support substrate side. In a semiconductor substrate, the bumps are typically formed on the surface on which the circuit is formed. The circuit may be single-layered or multi-layered. The shape of the circuit is not particularly limited. In a semiconductor substrate, the surface opposite to the surface having the bumps (the back surface) is the surface used for processing. The material, size, shape, structure, and density of the bumps on the semiconductor substrate are not particularly limited. Examples of bumps include ball bumps, printed bumps, stud bumps, and plated bumps. The height, radius, and pitch of the bumps are typically determined appropriately based on the following conditions: a bump height of approximately 1 to 200 μm, a bump radius of 1 to 200 μm, and a bump pitch of 1 to 500 μm. Examples of bump materials include low-melting-point solder, high-melting-point solder, tin, indium, gold, silver, and copper. The bump may be composed of only a single component or multiple components. More specifically, examples include alloy platings mainly containing Sn, such as SnAg bumps, SnBi bumps, Sn bumps, and AuSn bumps. The bump may also have a laminate structure including a metal layer composed of at least one of these components.

[0129] An example of a semiconductor substrate is a silicon wafer with a diameter of about 300 mm and a thickness of about 770 μm.

[0130] <<Electronic Device Substrate>> An electronic device substrate refers to a substrate having an electronic device. In the present invention, for example, it refers to a substrate consisting of a layer in which multiple semiconductor chip substrates are embedded in a sealing resin, that is, a substrate consisting of multiple semiconductor chip substrates and a sealing resin disposed between the semiconductor chip substrates. Here, "electronic device" refers to a member that constitutes at least a part of an electronic component. The electronic device is not particularly limited and can be a semiconductor substrate having various mechanical structures or circuits formed on the surface thereof. The electronic device is preferably a composite of a member made of metal or semiconductor and a resin that seals or insulates the member. The electronic device may have a rewiring layer (described later) and / or a semiconductor element or other element sealed or insulated with a sealing material or insulating material, and may have a single-layer or multi-layer structure.

[0131] <Layer Structure of Laminate> An example of the structure of the laminate will now be described with reference to the drawings. Fig. 1 shows a schematic cross-sectional view of an example of the laminate. The laminate of Fig. 1 has a semiconductor substrate 1, an adhesive layer 2, and a support substrate 4, in this order. That is, the adhesive layer 2 is provided between the semiconductor substrate 1 and the support substrate 4. A primer coating 3 is formed on the surface of the support substrate 4. The laminate of Fig. 1 is a device peel-off type laminate.

[0132] Figure 2 shows a schematic cross-sectional view of another example of a laminate. The laminate of Figure 2 has, in this order, a support substrate 24, an adhesive layer 22, and an electronic device substrate 26. The electronic device substrate 26 includes a plurality of semiconductor chip substrates 21 and sealing resin 25, which serves as a sealing material, disposed between the semiconductor chip substrates 21. The adhesive layer 22 is provided between the electronic device substrate 26 and the support substrate 24. A primer coating 23 is formed on the surface of the support substrate 24. The laminate of Figure 2 is a device peel-off type laminate.

[0133] (Method for manufacturing a laminate) The method for manufacturing a laminate of the present invention is a method for manufacturing a laminate having: a support substrate; a semiconductor substrate or electronic device substrate; an adhesive layer provided between the semiconductor substrate or electronic device substrate and the support substrate; and a primer film formed on the surface of any one of the semiconductor substrate or electronic device substrate and the support substrate, characterized in that it includes a step of forming a primer film by applying the above-mentioned composition for forming a primer film to the surface of any one of the semiconductor substrate or electronic device substrate and the support substrate. The method for manufacturing a laminate of the present invention may further include a step of applying an adhesive composition for forming the adhesive layer to any one of the semiconductor substrate or electronic device substrate and the support substrate on which the primer film is not formed, and a step of bonding the substrate on which the primer film is formed and a substrate on which the adhesive composition is applied, and then performing a heat treatment to form an adhesive layer between the semiconductor substrate or electronic device substrate and the support substrate.

[0134] Furthermore, taking into consideration that the laminate of the present invention is particularly a device peel-off type laminate, the method for producing the laminate of the present invention is preferably a production method including the steps of: forming a primer film by applying the above-mentioned composition for forming a primer film to the surface of a support substrate; applying an adhesive composition for forming an adhesive layer to a semiconductor substrate or an electronic device substrate; and bonding the support substrate on which the primer film has been formed and the semiconductor substrate or electronic device substrate on which the adhesive composition has been applied, and then performing a heat treatment to form an adhesive layer between the semiconductor substrate or electronic device substrate and the support substrate.

[0135] A method for producing a laminate will be described below using the laminate shown in Figure 1 as an example. An example of the laminate of the present invention can be produced, for example, by a method including the following first to fourth steps. Step 1: A step of applying a primer film-forming composition onto a support substrate to form a primer film on the surface of the support substrate. Step 2: A step of applying an adhesive composition onto a semiconductor substrate to form an adhesive coating layer (and, if necessary, further heating to form an adhesive layer). Step 3: A step of placing a support substrate having a primer film disposed on its surface on the adhesive coating layer or adhesive layer, and bonding the support substrate having a primer film disposed on its surface and the semiconductor substrate via the adhesive coating layer or adhesive layer while performing at least one of a heat treatment and a decompression treatment. Step 4: A step of curing the adhesive coating layer by post-heat treatment to form an adhesive layer.

[0136] The method for applying the primer coating composition is not particularly limited, but is usually spin coating, for example, at 1000 rpm for 60 seconds.

[0137] The method for applying the adhesive composition is not particularly limited, but is typically spin coating. Alternatively, a method can be employed in which a coating film is formed separately by spin coating or the like, a sheet-like coating film is formed, and the sheet-like coating film is then applied as an adhesive coating layer. The heating temperature of the applied adhesive composition cannot be generally specified because it varies depending on the type and amount of adhesive components contained in the adhesive composition, whether or not a solvent is contained, the boiling point of the solvent used, the desired thickness of the adhesive layer, and other factors. However, it is typically 80 to 150°C, and the heating time is typically 30 seconds to 5 minutes. When the adhesive composition contains a solvent, the applied adhesive composition is typically heated. The thickness of the adhesive coating layer obtained by applying the adhesive composition and, if necessary, heating it is typically about 5 to 500 μm, and is appropriately determined so as to ultimately achieve the above-mentioned range of adhesive layer thickness.

[0138] In the present invention, the laminate of the present invention can be obtained by applying a load in the thickness direction of the semiconductor substrate and the support substrate while performing a heat treatment, a decompression treatment, or both, and then performing a post-heat treatment. The treatment conditions to be adopted, whether heat treatment, decompression treatment, or a combination of both, are appropriately determined taking into consideration various factors such as the type of adhesive composition, the film thickness, and the desired adhesive strength.

[0139] The heat treatment temperature is determined appropriately from the viewpoint of removing the solvent from the composition, etc., usually within the range of 20 to 160° C. In particular, from the viewpoint of suppressing or avoiding excessive curing or unnecessary deterioration of the adhesive component (A), the heat treatment temperature is preferably 150° C. or lower, more preferably 130° C. or lower, and the heating time is determined appropriately depending on the heating temperature and the type of adhesive, but is usually 30 seconds or longer, preferably 1 minute or longer, from the viewpoint of reliably achieving suitable adhesion, and is usually 10 minutes or shorter, preferably 5 minutes or shorter, from the viewpoint of suppressing deterioration of the adhesive layer and other components.

[0140] The reduced pressure treatment can be carried out by exposing the adhesive coated layers in contact with each other to an atmospheric pressure of 10 to 10,000 Pa. The reduced pressure treatment time is usually 1 to 30 minutes.

[0141] The load in the thickness direction of the semiconductor substrate and the support substrate is not particularly limited as long as it does not adversely affect the semiconductor substrate, the support substrate, and the layers therebetween and can firmly adhere them to each other, but is usually within the range of 10 to 50,000 N.

[0142] The post-heating temperature is preferably 120°C or higher from the viewpoint of achieving a sufficient curing rate, and preferably 260°C or lower from the viewpoint of preventing deterioration of the substrate and each layer. The post-heating time is usually 1 minute or longer, preferably 5 minutes or longer, from the viewpoint of achieving suitable bonding of the substrate and layers constituting the laminate, and usually 180 minutes or shorter, preferably 120 minutes or shorter, from the viewpoint of suppressing or avoiding adverse effects on each layer due to excessive heating. Heating can be performed using a hot plate, oven, or the like. When post-heating is performed using a hot plate, either the semiconductor substrate or the support substrate of the laminate may be heated facing down, but from the viewpoint of achieving suitable peeling with good reproducibility, post-heating with the semiconductor substrate facing down is preferred. Note that one purpose of the post-heating treatment is to achieve an adhesive layer that is a more suitable free-standing film, and in particular to achieve suitable curing by a hydrosilylation reaction.

[0143] 3A to 3C are diagrams illustrating one embodiment of manufacturing the laminate shown in FIG. 1 . First, a laminate is prepared in which a primer coating 3 is formed on a support substrate 4 ( FIG. 3A ). This laminate can be obtained, for example, by applying a primer coating composition to the support substrate 4 by spin coating. Next, a laminate is prepared in which an adhesive coating layer 2a is formed on a semiconductor substrate 1 ( FIG. 3B ). This laminate can be obtained, for example, by applying an adhesive composition to the semiconductor substrate 1 and heating it. Next, a laminate consisting of a support substrate 4 having a primer coating 3 formed on its surface as shown in FIG. 3A and a laminate consisting of a semiconductor substrate 1 having an adhesive coating layer 2a as shown in FIG. 3B are bonded together so that the adhesive coating layer 2a contacts the support substrate 4 via the primer coating 3. Then, a load is applied to the semiconductor substrate 1 and the support substrate 4 in the thickness direction under reduced pressure. After that, a heating device (not shown; hot plate) is placed on the surface of the semiconductor substrate 1 opposite the surface where the adhesive coating layer 2a contacts. The adhesive coating layer 2a is heated and cured by the heating device, converting it into the adhesive layer 2 ( FIG. 3C ). The laminate shown in FIG. 1 is obtained by the steps shown in FIGS. 3A to 3C.

[0144] 2 as an example, a method for producing a laminate will be described below. An example of the laminate of the present invention can be produced, for example, by a method including the following steps 1 (D) to 5 (D). Step 1 (D): A step of applying a primer film-forming composition onto a support substrate to form a primer film on the surface of the support substrate. Step 2 (D): A step of applying an adhesive composition onto a semiconductor chip substrate to form an adhesive coating layer (and, if necessary, further heating to form an adhesive layer). Step 3 (D): A step of placing a support substrate having a primer film disposed on its surface on the adhesive coating layer or adhesive layer, and bonding the support substrate having a primer film disposed on its surface and the semiconductor chip substrate via the adhesive coating layer or adhesive layer while performing at least one of a heat treatment and a decompression treatment. Step 4 (D): A step of curing the adhesive coating layer by post-heat treatment to form an adhesive layer. Step 5 (D): A step of sealing the semiconductor chip substrate fixed on the adhesive layer with a sealing resin.

[0145] 4A to 4D are diagrams illustrating one embodiment of manufacturing the laminate shown in FIG. 2. First, a laminate is prepared in which a primer film 23 is formed on a support substrate 24 ( FIG. 4A ). This laminate can be obtained, for example, by applying a primer film-forming composition to the support substrate 24 by spin coating. Next, a laminate is prepared in which an adhesive coating layer 22a is formed on a semiconductor chip substrate 21 ( FIG. 4B ). This laminate can be obtained, for example, by applying an adhesive composition to the semiconductor chip substrate 21 and heating it. At this time, the adhesive coating layer 22a may be heated to form the adhesive layer 22. Next, a laminate consisting of the support substrate 24 having the primer film 23 formed on its surface shown in FIG. 4A and a laminate consisting of the semiconductor chip substrate 21 having the adhesive coating layer 22a shown in FIG. 4B are bonded together so that the adhesive coating layer 22a contacts the support substrate 24 via the primer film 23. Then, after applying a load in the thickness direction of the semiconductor chip substrate 21 and the support substrate 24 under reduced pressure, a heating device (not shown; hot plate) is placed on the surface of the semiconductor chip substrate 21 opposite the surface where the adhesive coating layer 22a contacts, and the adhesive coating layer 22a is heated and cured by the heating device, converting it into the adhesive layer 22 ( FIG. 4C ). Next, as shown in FIG. 4D , the semiconductor chip substrate 21 fixed on the adhesive layer 22 is sealed with sealing resin 25. In FIG. 4D , multiple semiconductor chip substrates 21 temporarily bonded to the support substrate 24 via the adhesive layer 22 are sealed with sealing resin 25. An electronic device substrate 26 is formed on the adhesive layer 22, including the semiconductor chip substrates 21 and the sealing resin 25 disposed between the semiconductor chip substrates 21. Thus, the electronic device substrate 26 is a base layer in which multiple semiconductor chip substrates are embedded in the sealing resin. The processes shown in FIGS. 4A to 4D result in the laminate shown in FIG. 2 .

[0146] <Encapsulating Step> The semiconductor chip substrate 21 is encapsulated using an encapsulant. The encapsulant used for encapsulating the semiconductor chip substrate 21 is a material capable of insulating or encapsulating components made of metal or semiconductor. In the present invention, for example, a resin composition (encapsulating resin) is used as the encapsulant. The type of encapsulating resin is not particularly limited as long as it is capable of encapsulating and / or insulating metal or semiconductor, but it is preferable to use, for example, an epoxy-based resin or a silicone-based resin. The encapsulating material may contain other components such as a filler in addition to the resin component. Examples of fillers include spherical silica particles. In the encapsulating step, the encapsulating resin, heated to, for example, 130 to 170°C, is supplied onto the adhesive layer 22 while maintaining a high viscosity, so as to cover the semiconductor chip substrate 21, and is compression-molded to form a layer made of the encapsulating resin 25 on the adhesive layer 22. The temperature conditions during this process are, for example, 130 to 170°C. The pressure applied to the semiconductor chip substrate 21 is, for example, 50 to 500 N / cm. ２ is.

[0147] (Method for manufacturing a processed semiconductor substrate or electronic device substrate) Using the laminate of the present invention, it is possible to provide a method for manufacturing a processed semiconductor substrate or a method for manufacturing a processed electronic device substrate. The method for manufacturing a processed semiconductor substrate or electronic device substrate of the present invention is characterized by comprising: a fifth step in which a semiconductor substrate or electronic device substrate (semiconductor substrate, etc.) in the laminate of the present invention is processed; and a sixth step in which the semiconductor substrate or electronic device substrate (semiconductor substrate, etc.) processed in the fifth step is separated from the support substrate in the laminate. Thus, the method for manufacturing a processed semiconductor substrate of the present invention comprises the following fifth step and sixth step. The method for manufacturing a processed electronic device substrate may further comprise the following seventh step. Fifth step: a step of processing a semiconductor substrate or electronic device substrate (semiconductor substrate, etc.) in the laminate of the present invention; Sixth step: a step of separating the semiconductor substrate or electronic device substrate (semiconductor substrate, etc.) processed in the fifth step from the support substrate; Seventh step: a step of cleaning the processed semiconductor substrate or electronic device substrate after the sixth step.

[0148] The processing performed on the semiconductor substrate or electronic device substrate (semiconductor substrate, etc.) in the fifth step is, for example, processing of the side opposite the circuit surface of the wafer, such as thinning the wafer by polishing the back surface of the wafer. Thereafter, for example, through-silicon vias (TSVs) are formed, and then the thinned wafer is peeled off from the support substrate to form a wafer stack, which is then three-dimensionally mounted. Also, for example, before or after this, formation of wafer backside electrodes, etc. is also performed. During the wafer thinning and TSV process, a heat load of approximately 250 to 350°C is applied while the wafer is adhered to the support substrate. The laminate of the present invention, including the adhesive layer, typically has heat resistance to this load. The processing is not limited to the above-described processing, and also includes, for example, the implementation of a semiconductor component mounting process when the wafer is temporarily adhered to a support substrate to support the substrate for mounting the semiconductor component.

[0149] In particular, when the laminate has an electronic device substrate, examples of the processing performed on the electronic device substrate in the fifth step include the grinding step and wiring layer formation step described below.

[0150] <Grinding Step> The grinding step is a step of grinding away the resin portion of the sealing resin 25 layer on the electronic device substrate 26 so that a part of the semiconductor chip substrate 21 is exposed.

[0151] <Wiring Layer Forming Process> The wiring layer forming process is a process of forming a wiring layer on the exposed semiconductor chip substrate 21 after the grinding process. The wiring layer is also called an RDL (Redistribution Layer), and is a thin-film wiring body that constitutes wiring connected to the substrate, and can have a single-layer or multi-layer structure. The wiring layer is made of a dielectric (silicon oxide (SiO ｘ The wiring layer may be formed by a conductor (for example, a metal such as aluminum, copper, titanium, nickel, gold, or silver, or an alloy such as a silver-tin alloy) between a layer of a sealing resin 25 (e.g., a photosensitive resin such as a photosensitive epoxy, photosensitive resin, etc.), but is not limited to this. Examples of methods for forming the wiring layer include the following methods. First, silicon oxide (SiO ｘ ), a dielectric layer made of a photosensitive resin or the like is formed. The dielectric layer made of silicon oxide can be formed by, for example, sputtering, vacuum deposition, or the like. The dielectric layer made of a photosensitive resin can be formed by applying the photosensitive resin onto the layer of sealing resin 25 by, for example, spin coating, dipping, roller blade, spray coating, slit coating, or the like. Next, wiring is formed on the dielectric layer using a conductor such as metal. Methods for forming the wiring include, for example, known semiconductor process techniques such as lithography processes such as photolithography (resist lithography), etching, and the like. Examples of such lithography processes include lithography processes using a positive resist material and lithography processes using a negative resist material.

[0152] In the sixth step, the method for separating (peeling) the semiconductor substrate or electronic device substrate from the support substrate (e.g., semiconductor substrate) is not particularly limited. For example, a method of mechanically peeling them using a tool with a sharp part (a so-called debonder) can be used. Specifically, for example, a sharp part is inserted between the semiconductor substrate or electronic device substrate (e.g., semiconductor substrate) and the support substrate, and then the semiconductor substrate or electronic device substrate (e.g., semiconductor substrate) and the support substrate are separated.

[0153] The substrates can be cleaned by spraying the cleaning composition onto the surface of at least one of the separated semiconductor substrate or electronic device substrate (semiconductor substrate, etc.) and the supporting substrate, or by immersing the separated semiconductor substrate or electronic device substrate (semiconductor substrate, etc.) or the supporting substrate in the cleaning composition. The surface of the processed semiconductor substrate, etc. may also be cleaned using a removal tape or the like. As an example of cleaning the substrate, a seventh step of cleaning the processed semiconductor substrate, etc. may be performed after the sixth step. Examples of cleaning compositions used for cleaning include the following.

[0154] The cleaning agent composition usually contains a solvent. Examples of the solvent include lactones, ketones, polyhydric alcohols, compounds having an ester bond, derivatives of polyhydric alcohols, cyclic ethers, esters, and aromatic organic solvents. Examples of the lactones include γ-butyrolactone. Examples of the ketones include acetone, methyl ethyl ketone, cyclohexanone, methyl-n-pentyl ketone, methyl isopentyl ketone, and 2-heptanone. Examples of the polyhydric alcohols include ethylene glycol, diethylene glycol, propylene glycol, and dipropylene glycol. Examples of compounds having an ester bond include ethylene glycol monoacetate, diethylene glycol monoacetate, propylene glycol monoacetate, and dipropylene glycol monoacetate. Examples of derivatives of polyhydric alcohols include compounds having an ether bond, such as monoalkyl ethers or monophenyl ethers of the above polyhydric alcohols or compounds having an ester bond, such as monomethyl ether, monoethyl ether, monopropyl ether, and monobutyl ether. Among these, propylene glycol monomethyl ether acetate (PGMEA) and propylene glycol monomethyl ether (PGME) are preferred. Examples of cyclic ethers include dioxane. Examples of esters include methyl lactate, ethyl lactate (EL), methyl acetate, ethyl acetate, butyl acetate, methyl pyruvate, ethyl pyruvate, methyl methoxypropionate, and ethyl ethoxypropionate. Examples of aromatic organic solvents include anisole, ethyl benzyl ether, cresyl methyl ether, diphenyl ether, dibenzyl ether, phenetole, butylphenyl ether, ethylbenzene, diethylbenzene, pentylbenzene, isopropylbenzene, toluene, xylene, cymene, mesitylene, etc. These can be used alone or in combination of two or more.Among these, propylene glycol monomethyl ether acetate (PGMEA), propylene glycol monomethyl ether (PGME), cyclohexanone, and ethyl lactate (EL) are preferred.

[0155] Also preferred are mixed solvents containing PGMEA and a polar solvent. The blending ratio (mass ratio) can be determined appropriately taking into account the compatibility of the PGMEA and the polar solvent, but is preferably within the range of 1:9 to 9:1, and more preferably 2:8 to 8:2. For example, when EL is blended as the polar solvent, the mass ratio of PGMEA:EL is preferably 1:9 to 9:1, and more preferably 2:8 to 8:2. When PGME is blended as the polar solvent, the mass ratio of PGMEA:PGME is preferably 1:9 to 9:1, more preferably 2:8 to 8:2, and even more preferably 3:7 to 7:3. When PGME and cyclohexanone are blended as the polar solvents, the mass ratio of PGMEA:(PGME + cyclohexanone) is preferably 1:9 to 9:1, more preferably 2:8 to 8:2, and even more preferably 3:7 to 7:3.

[0156] The cleaning composition may or may not contain a salt; however, the absence of a salt is preferred in terms of increasing versatility in processing semiconductor substrates using the laminate and reducing costs.

[0157] An example of a detergent composition containing a salt is a detergent composition containing a quaternary ammonium salt and a solvent. The quaternary ammonium salt is composed of a quaternary ammonium cation and an anion, and is not particularly limited as long as it is used for this type of application. A typical example of such a quaternary ammonium cation is a tetra(hydrocarbon)ammonium cation. On the other hand, the anion paired with the quaternary ammonium cation is a hydroxide ion (OH － ) ; fluorine ion (F － ), chloride ions (Cl － ), bromine ion (Br － ), iodine ion (I － ) and other halogen ions; tetrafluoroborate ion (BF４ － ) ; hexafluorophosphate ion (PF ６ － ) and the like, but are not limited to these.

[0158] The quaternary ammonium salt is preferably a halogen-containing quaternary ammonium salt, more preferably a fluorine-containing quaternary ammonium salt. In the quaternary ammonium salt, the halogen atom may be contained in either the cation or the anion, but is preferably contained in the anion.

[0159] In a preferred embodiment, the fluorine-containing quaternary ammonium salt is tetra(hydrocarbon)ammonium fluoride. Specific examples of the hydrocarbon group in tetra(hydrocarbon)ammonium fluoride include alkyl groups having 1 to 20 carbon atoms, alkenyl groups having 2 to 20 carbon atoms, alkynyl groups having 2 to 20 carbon atoms, and aryl groups having 6 to 20 carbon atoms. In a more preferred embodiment, the tetra(hydrocarbon)ammonium fluoride includes tetraalkylammonium fluoride. Specific examples of tetraalkylammonium fluorides include, but are not limited to, tetramethylammonium fluoride, tetraethylammonium fluoride, tetrapropylammonium fluoride, and tetrabutylammonium fluoride (also known as tetrabutylammonium fluoride). Of these, tetrabutylammonium fluoride is preferred.

[0160] The quaternary ammonium salts such as tetra(hydrocarbon)ammonium fluoride may be used in the form of a hydrate. The quaternary ammonium salts such as tetra(hydrocarbon)ammonium fluoride may be used singly or in combination of two or more. The amount of the quaternary ammonium salt is not particularly limited as long as it dissolves in the solvent contained in the cleaning composition, but is usually 0.1 to 30 mass% based on the cleaning composition.

[0161] When the cleaning composition contains a salt, the solvent to be used in combination with the salt is not particularly limited as long as it is used for this type of application and dissolves the salt such as a quaternary ammonium salt. However, from the viewpoint of reproducibly obtaining a cleaning composition having excellent cleaning properties and from the viewpoint of satisfactorily dissolving the salt such as a quaternary ammonium salt to obtain a cleaning composition having excellent uniformity, the cleaning composition preferably contains one or two or more amide solvents.

[0162] A suitable example of the amide solvent is an acid amide derivative represented by formula (Z).

[0163] In the formula, R ０ represents an ethyl group, a propyl group, or an isopropyl group, preferably an ethyl group or an isopropyl group, and more preferably an ethyl group. Ａ and R Ｂ each independently represents an alkyl group having 1 to 4 carbon atoms. The alkyl group having 1 to 4 carbon atoms may be linear, branched, or cyclic, and specific examples include a methyl group, an ethyl group, a propyl group, an isopropyl group, a cyclopropyl group, an n-butyl group, an isobutyl group, an s-butyl group, a t-butyl group, and a cyclobutyl group. Of these, R Ａ and R Ｂ As the alkyl group, a methyl group or an ethyl group is preferred, and both of them are more preferably methyl groups or ethyl groups, and both of them are even more preferably methyl groups.

[0164] Examples of the acid amide derivative represented by formula (Z) include N,N-dimethylpropionamide, N,N-diethylpropionamide, N-ethyl-N-methylpropionamide, N,N-dimethylbutyric acid amide, N,N-diethylbutyric acid amide, N-ethyl-N-methylbutyric acid amide, N,N-dimethylisobutyric acid amide, N,N-diethylisobutyric acid amide, N-ethyl-N-methylisobutyric acid amide, etc. Among these, N,N-dimethylpropionamide and N,N-dimethylisobutyric acid amide are particularly preferred, and N,N-dimethylpropionamide is more preferred.

[0165] The acid amide derivative represented by formula (Z) may be synthesized by a substitution reaction between a corresponding carboxylic acid ester and an amine, or a commercially available product may be used.

[0166] Another example of a preferred amide solvent is a lactam compound represented by formula (Y).

[0167] In formula (Y), R １０１ represents a hydrogen atom or an alkyl group having 1 to 6 carbon atoms, R １０２ represents an alkylene group having 1 to 6 carbon atoms. Specific examples of the alkyl group having 1 to 6 carbon atoms include a methyl group, an ethyl group, an n-propyl group, and an n-butyl group, and specific examples of the alkylene group having 1 to 6 carbon atoms include a methylene group, an ethylene group, a trimethylene group, a tetramethylene group, a pentamethylene group, and a hexamethylene group, but are not limited to these.

[0168] Specific examples of the lactam compound represented by formula (Y) include α-lactam compounds, β-lactam compounds, γ-lactam compounds, and δ-lactam compounds, and these can be used alone or in combination of two or more.

[0169] In a preferred embodiment, the lactam compound represented by formula (Y) includes 1-alkyl-2-pyrrolidone (N-alkyl-γ-butyrolactam), in a more preferred embodiment, it includes N-methylpyrrolidone (NMP) or N-ethylpyrrolidone (NEP), and in an even more preferred embodiment, it includes N-methylpyrrolidone (NMP).

[0170] The cleaning composition used in the present invention may contain water as a solvent, but usually only an organic solvent is used as the solvent from the viewpoint of avoiding corrosion of the substrate, etc. In this case, it is not excluded that the cleaning composition may contain water of hydration of salts or trace amounts of water contained in the organic solvent. The water content of the cleaning composition used in the present invention is usually 5 mass% or less.

[0171] The constituent elements and methodological elements of the above-described steps of the method for manufacturing a processed semiconductor substrate or electronic device substrate (semiconductor substrate, etc.) of the present invention may be modified in various ways without departing from the spirit of the present invention. The method for manufacturing a processed semiconductor substrate or electronic device substrate (semiconductor substrate, etc.) of the present invention may include steps other than those described above.

[0172] (Primer Film-Forming Composition) The primer film-forming composition of the present invention is a primer film-forming composition for increasing the adhesive strength between a substrate and an adhesive layer formed from an adhesive composition containing an adhesive component that cures by a hydrosilylation reaction, and the composition contains a component that contributes to the hydrosilylation reaction, as described in detail in the section "Primer Film-Forming Composition" under "Primer Film" in the above (Laminate). The adhesive layer, which is the target of the primer film-forming composition to increase the adhesion to the substrate via the primer film-forming composition, is as described in the section "Adhesive Layer" in the above (Laminate).

[0173] The present invention will be described in more detail below with reference to examples, but the present invention is not limited to the following examples. The apparatus used is as follows.

[0174] [Apparatus] (1) Mixer A: ARE-500, planetary centrifugal mixer, manufactured by Thinky Corporation (2) Mixer B: VMR-5R mix rotor, manufactured by AS ONE Corporation (3) Mixer C: BLW-600, three-one motor, manufactured by Shinto Scientific Co., Ltd. (4) Spin coating device: Coater, manufactured by APOGEE Corporation (5) Measurement of complex viscosity: MCR-302 rheometer, manufactured by Anton Paar Corporation (6) Vacuum bonding device: Autobonder, manufactured by SUSS MicroTec Co., Ltd. (7) Peeling device Y: Autodebonder, manufactured by SUSS MicroTec Co., Ltd.

[0175] [1] Preparation of primer film-forming composition (adhesion aid composition) [Preparation Example 1-1] To a 100 mL glass container with a lid, 0.01 g of Tetrakis(triphenylphosphine) platinum (manufactured by Tokyo Chemical Industry Co., Ltd.) represented by the following formula (X-1), 49.995 g of propylene glycol monomethyl ether, and 49.995 g of propylene glycol monomethyl ether acetate were added, and the mixture was stirred for 5 minutes with Stirrer A to obtain a primer film-forming composition (hereinafter also referred to as adhesion aid composition).

[0176] Preparation Example 1-2 To a 100 mL glass container with a lid, 0.01 g of Octakis(dimethylsilyloxy)octasilsesquioxane (manufactured by Tokyo Chemical Industry Co., Ltd.) represented by the following formula (X-2) and 99.99 g of propylene glycol monomethyl ether acetate were added, and the mixture was stirred with Stirrer A for 5 minutes to obtain an adhesion auxiliary composition.

[0177] Preparation Example 1-3 To a 100 mL glass container with a lid, 0.01 g of Bis(2,4-pentanedionato)platinum (manufactured by Tokyo Chemical Industry Co., Ltd.) represented by the following formula (X-3), 49.995 g of p-menthane, and 49.995 g of propylene glycol monomethyl ether acetate were added, and the mixture was stirred with Stirrer A for 5 minutes to obtain an adhesion auxiliary composition.

[0178] Preparation Example 1-4 To a 100 mL glass container with a lid, 0.01 g of a platinum(0)-1,3-divinyl-1,1,3,3-tetramethyldisiloxane complex solution represented by the following formula (X-4) (manufactured by Sigma-Aldrich) and 99.99 g of p-menthane were added, and the mixture was stirred for 5 minutes with Stirrer A to obtain an adhesion promoter composition.

[0179] Preparation Example 1-5 To a 100 mL glass container with a lid, 0.01 g of [Bicyclo[2.2.1]hept-5-en-2-yl]triethoxysilane (Gelest Inc.) represented by the following formula (XR-1) and 99.99 g of propylene glycol monomethyl ether acetate were added, and the mixture was stirred with Stirrer A for 5 minutes to obtain an adhesive auxiliary composition.

[0180] Preparation Example 1-6 0.1 g of [Bicyclo[2.2.1]hept-5-en-2-yl]triethoxysilane (Gelest Inc.) and 99.9 g of propylene glycol monomethyl ether acetate were added to a 100 mL glass container with a lid, and the mixture was stirred with Stirrer A for 5 minutes to obtain an adhesive auxiliary composition.

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[0182]

[0183]

[0184] [2] Preparation of adhesive composition [Preparation Example 2-1] 1.67 g of 1,1-diphenyl-2-propyn-1-ol (manufactured by Tokyo Chemical Industry Co., Ltd.) and 1.67 g of 1-ethynyl-1-cyclohexanol (manufactured by Wacker Chemie) were added to a 50 mL glass container with a lid, and the mixture was stirred for 5 minutes with Stirrer A to obtain a mixture (I). Next, in a 200 mL lidded glass container, polyorganosiloxane (complex viscosity 6000 Pa s, weight average molecular weight 642,000 (dispersity 2.6), Wacker Chemi Co., Ltd. trade name GENIOPLAST GUM) 47.84 g, viscosity 100 mPa s SiH group-containing linear polydimethylsiloxane (manufactured by Wacker Chemi Co., Ltd.) 100.18 g and p-menthane (manufactured by Nippon Terpene Chemical Co., Ltd.) 9.77 g was added, and the mixture was stirred with a stirrer A until the mixture was uniform to obtain a mixture (II). Subsequently, in a 1 L lidded plastic container, 921.14 g of p-menthane solution (concentration 81.2% by mass) of vinyl group-containing MQ resin (manufactured by Wacker Chemi Co., Ltd.), 0.2 g of platinum catalyst (manufactured by Wacker Chemi Co., Ltd.) was added, and the mixture was stirred using a stirrer B until the mixture was uniform to obtain a mixture (III). Next, in a 1 L plastic container with a lid, 1.67 g of mixture (I), separately vinyl group-containing MQ resin (manufactured by Wacker Chemie), vinyl group-containing linear polydimethylsiloxane having a viscosity of 200 mPa s (manufactured by Wacker Chemie), SiH group-containing linear polydimethylsiloxane having a viscosity of 100 mPa s (manufactured by Wacker Chemie) in a ratio of 51.6:38.9:9.5 157.67 g of solution, 131.49 g of mixed liquid (II) was added, and the mixture was stirred until uniform using a stirrer B. Thereto, 614.23 g of mixed liquid (III), 7.97 g of epoxy-modified silicone oil (manufactured by Shin-Etsu Chemical Co., Ltd., trade name X-22-343) and 21.72 g of p-menthane (manufactured by Nippon Terpene Chemical Co., Ltd.) were added, and the mixture was stirred until uniform using a stirrer B. Finally, the resulting mixture was filtered through a 300 mesh nylon filter to obtain an adhesive composition.

[0185] [3] Preparation of Laminate [Example 1-1] The adhesive auxiliary agent composition obtained in Preparation Example 1-1 was spin-coated at 1500 rpm for 60 seconds onto a 300 mm silicon wafer (775 μm thick) serving as a carrier-side substrate, forming a primer film (also referred to as an adhesive auxiliary agent coating film) on the silicon wafer serving as a support substrate. Meanwhile, the adhesive composition obtained in Preparation Example 2-1 was spin-coated onto a 300 mm silicon wafer (775 μm thick) serving as a device-side substrate so that the film thickness in the final laminate was 50 μm, forming an adhesive coating layer on the silicon wafer serving as a semiconductor substrate. Then, using a bonding device, the support substrate on which the adhesive auxiliary agent coating film was formed and the semiconductor substrate on which the adhesive coating layer was formed were bonded together so that the adhesive auxiliary agent coating film and the adhesive coating layer were sandwiched between them, and then the laminate was produced by heat-treating at 130°C for 5 minutes and then at 200°C for 5 minutes. The lamination was carried out at a temperature of 23° C., a reduced pressure of 1,000 Pa, and a load of 30 N.

[0186] Example 1-2 A laminate was obtained in the same manner as in Example 1-1, except that the adhesion auxiliary composition obtained in Preparation Example 1-2 was used instead of the adhesion auxiliary agent composition obtained in Preparation Example 1-1.

[0187] Example 1-3 A laminate was obtained in the same manner as in Example 1-1, except that the adhesion auxiliary composition obtained in Preparation Example 1-3 was used instead of the adhesion auxiliary agent composition obtained in Preparation Example 1-1.

[0188] Example 1-4 A laminate was obtained in the same manner as in Example 1-1, except that the adhesion auxiliary composition obtained in Preparation Example 1-4 was used instead of the adhesion auxiliary agent composition obtained in Preparation Example 1-1.

[0189] Comparative Example 1-1 A laminate was obtained in the same manner as in Example 1-1, except that the adhesion auxiliary composition obtained in Preparation Example 1-5 was used instead of the adhesion auxiliary agent composition obtained in Preparation Example 1-1.

[0190] Comparative Example 1-2 A laminate was obtained in the same manner as in Example 1-1, except that the adhesion auxiliary composition obtained in Preparation Example 1-6 was used instead of the adhesion auxiliary agent composition obtained in Preparation Example 1-1.

[0191] Comparative Example 1-3 A laminate was obtained in the same manner as in Example 1-1, except that the adhesive auxiliary agent composition obtained in Preparation Example 1-1 was not used and a support substrate on which no adhesive auxiliary agent coating layer was formed was used as the substrate on the carrier side.

[0192] [4] Evaluation of Adhesion The state of residue after peeling was confirmed using the obtained laminate. Specifically, after peeling the support substrate and semiconductor substrate using peeling device Y, the presence or absence of a film on the wafer on the carrier side (support substrate side) and the wafer on the device side (semiconductor substrate side) was confirmed. As a result, for the laminates of Examples 1-1, 1-2, 1-3, and 1-4, no film was observed on the wafer on the device side, and a film of the adhesive layer remained on the wafer on the carrier side, whereas for the laminates of Comparative Examples 1-1, 1-2, and 1-3, a film of the adhesive layer was observed on the wafer on the device side. Thus, when the primer film-forming composition (adhesion auxiliary composition) of the present invention was used, the adhesive strength of the adhesive composition was improved, and interfacial peeling occurred on the device side (semiconductor substrate side) opposite the support substrate on whose surface the primer film-forming composition (adhesion auxiliary composition) was applied, and it was confirmed that after peeling the laminate, a film of the adhesive composition remained on the support substrate side on which the primer film-forming composition (adhesion auxiliary composition) was applied.

[0193] From the above results, by selecting whether the primer coating is disposed on the support substrate side or on the semiconductor substrate or electronic device substrate side, it is possible to control the location of peeling (peeling interface) when peeling the support substrate from the semiconductor substrate or electronic device substrate.

[0194] REFERENCE SIGNS LIST 1 Semiconductor substrate 2 Adhesive layer 2a Adhesive coating layer 3 Primer film 4 Support substrate 21 Semiconductor chip substrate 22 Adhesive layer 22a Adhesive coating layer 23 Primer film 24 Support substrate 25 Sealing resin 26 Electronic device substrate

Claims

1. A primer film-forming composition for enhancing the adhesive strength between a substrate and an adhesive layer formed from an adhesive composition containing an adhesive component that cures by a hydrosilylation reaction, the primer film-forming composition containing a component that contributes to the hydrosilylation reaction.

2. The primer film-forming composition according to claim 1, wherein the primer film-forming composition contains, as a component that contributes to the hydrosilylation reaction, a component selected from the group consisting of a platinum-containing compound, a Si-H group-containing compound, and a vinyl group-containing compound.

3. The composition for forming a primer film according to claim 1, wherein the adhesive composition forming the adhesive layer contains the adhesive component and a release agent component.

4. The primer film-forming composition according to claim 3, wherein the release agent component comprises a polyorganosiloxane.

5. The primer coating composition according to claim 1, wherein the adhesive component that cures by a hydrosilylation reaction contains: a component (A-1) having an alkenyl group having 2 to 40 carbon atoms bonded to a silicon atom; a component (A-2) having a Si—H group; and a platinum group metal catalyst (A-3).

6. A laminate comprising: a support substrate; a semiconductor substrate or an electronic device substrate; and an adhesive layer provided between the semiconductor substrate or the electronic device substrate and the support substrate, wherein a primer film is formed on a substrate surface of either the semiconductor substrate or the electronic device substrate or the support substrate, and the primer film is a primer film formed from a primer film-forming composition according to any one of claims 1 to 5.

7. The laminate according to claim 6, wherein the primer coating is formed on the surface of the support substrate.

8. A method for producing a laminate having a support substrate, a semiconductor substrate or an electronic device substrate, an adhesive layer provided between the semiconductor substrate or the electronic device substrate and the support substrate, and a primer film formed on a substrate surface of either the semiconductor substrate or the electronic device substrate or the support substrate, the method comprising the step of forming a primer film by applying a primer film-forming composition according to any one of claims 1 to 5 to the substrate surface of either the semiconductor substrate or the electronic device substrate or the support substrate.

9. The method for producing a laminate according to claim 8, further comprising the steps of: applying an adhesive composition for forming the adhesive layer to either the semiconductor substrate or the electronic device substrate or the support substrate on which the primer film is not formed; and bonding the substrate on which the primer film is formed and the substrate on which the adhesive composition is applied, and then performing a heat treatment to form an adhesive layer between the semiconductor substrate or the electronic device substrate and the support substrate.

10. A method for producing a laminate according to claim 9, comprising the steps of: forming a primer film by applying a primer film-forming composition according to any one of claims 1 to 5 to the surface of a support substrate; applying an adhesive composition for forming an adhesive layer to a semiconductor substrate or an electronic device substrate; and bonding the support substrate on which the primer film has been formed to the semiconductor substrate or the electronic device substrate on which the adhesive composition has been applied, and then performing a heat treatment to form an adhesive layer between the semiconductor substrate or the electronic device substrate and the support substrate.

11. A method for manufacturing a processed semiconductor substrate or electronic device substrate, comprising: a fifth step in which the semiconductor substrate or electronic device substrate of the laminate described in claim 6 is processed; and a sixth step in which the semiconductor substrate or electronic device substrate processed in the fifth step is separated from the support substrate.

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