Ultrasonic transducer unit and array, and ultrasonic treatment apparatus

Abstract

An ultrasonic transducer unit and array, and an ultrasonic treatment apparatus. The ultrasonic transducer unit comprises a backing layer, a heavy backing layer, a piezoelectric layer, and a matching layer which are sequentially stacked, wherein the thickness of the piezoelectric layer ranges from 0.125 times to 0.25 times the wavelength, excluding 0.25 times the wavelength, and the wavelength refers to the wavelength of the wave at a center frequency of the ultrasonic transducer unit in the piezoelectric layer. According to the present application, the thickness of the piezoelectric layer is relatively thin and ranges from 0.125 times to 0.25 times the wavelength, allowing for further reduction of the area of the piezoelectric layer, so that an ultrasonic transducer having a smaller size can be manufactured, and product miniaturization is achieved.

Description

Ultrasonic transducer unit, array and ultrasonic therapeutic device

[0001] This application claims priority to the Chinese patent application filed with the China Patent Office on March 29, 2024, with application number 202410388613.0 and invention name “An Ultrasonic Transducer Unit, Array and Ultrasonic Therapeutic Device”, the entire contents of which are incorporated by reference into this application. Technical Field

[0002] The present application relates to the field of ultrasonic transducers, and in particular to an ultrasonic transducer unit, an array, and an ultrasonic therapeutic apparatus. Background Art

[0003] The ultrasonic transducer unit is a key component of ultrasonic testing instruments, converting electromagnetic energy into mechanical energy (acoustic energy). The piezoelectric layer, matching layer, and backing layer are the core components of the ultrasonic transducer unit. Currently, the piezoelectric layer in ultrasonic transducer units can be made one-quarter wavelength (λ / 4) thick, with a heavy backing layer added between the piezoelectric layer and the backing layer.

[0004] Compared to a piezoelectric layer with a thickness of half a wavelength (λ / 2), a piezoelectric layer with a thickness of one-quarter wavelength is thinner. At the same time, a heavy backing layer can be used to prevent acoustic interference from behind the piezoelectric layer, thereby increasing the bandwidth of the transducer. However, the thickness of the piezoelectric layer is still relatively thick, and the area of ​​the piezoelectric layer is also relatively large, which leads to a relatively large volume of the ultrasonic transducer unit, making it difficult to achieve miniaturization.

[0005] However, the thickness of the piezoelectric layer selected as λ / 4 is only a theoretical value. When the actual piezoelectric layer vibrates under the high-frequency voltage signal of the upper and lower electrodes to generate ultrasonic energy, it is affected by the other layer structures above and below it, resulting in the actual output ultrasonic energy failing to reach the ideal maximum output. It is usually necessary to increase the number (volume) of array elements of the transducer unit, etc., which increases the volume while reducing the energy conversion efficiency and increasing the heat generation, resulting in a further increase in the heat dissipation volume.

[0006] Therefore, how to solve the above technical problems should be the focus of those skilled in the art.

[0007] Summary of the Invention

[0008] The purpose of this application is to provide an ultrasonic transducer unit, an array and an ultrasonic therapeutic apparatus to reduce the volume of the ultrasonic transducer unit while enhancing the supporting performance of the piezoelectric layer.

[0009] In order to solve the above technical problems, the present application provides an ultrasonic transducer unit, comprising a backing layer, a heavy backing layer, a piezoelectric layer and a matching layer stacked in sequence, wherein the thickness of the piezoelectric layer ranges from 0.125 times the wavelength to 0.25 times the wavelength, and does not include 0.25 times the wavelength; the contact surface of the heavy backing layer and the piezoelectric layer is a vibration zero displacement surface. When the piezoelectric layer vibrates, the displacement of the contact surface in the vibration direction is zero, and the wavelength refers to the wavelength of the wave of the center frequency of the ultrasonic transducer unit in the piezoelectric layer.

[0010] Optionally, the thickness of the heavy backing layer ranges from five times the wavelength to ten times the wavelength.

[0011] Optionally, the thickness of the heavy backing layer ranges from 0.25 times the wavelength to 1.25 times the wavelength.

[0012] Optionally, the acoustic impedance of the heavy backing layer is greater than the acoustic impedance of the piezoelectric layer.

[0013] Optionally, the acoustic impedance of the heavy backing layer is 3 to 5 times the acoustic impedance of the piezoelectric layer.

[0014] Optionally, the material of the heavy backing layer includes tungsten or tungsten alloy.

[0015] Optionally, also include:

[0016] A conductive layer is disposed between the piezoelectric layer and the heavy backing layer.

[0017] Optionally, the number of the matching layer is at least two, and the acoustic impedance of the matching layer in direct contact with the piezoelectric layer is greater than that of the piezoelectric layer.

[0018] Optionally, the surface of the backing layer away from the heavy backing layer is a curved surface with a Gaussian curvature greater than zero.

[0019] The present application also provides an ultrasonic transducer array, which includes a plurality of ultrasonic transducer units described in any one of the above.

[0020] Optionally, gaps are provided between adjacent ultrasonic transducer units, and the gaps are filled with an insulating medium; wherein the gaps are distributed between the heavy backing layer and the matching layer; and the ultrasonic transducer unit further includes a conductive channel passing through the heavy backing layer.

[0021] The present application also provides an ultrasonic therapeutic apparatus, which includes any one of the ultrasonic transducer units or ultrasonic transducer arrays described above.

[0022] An ultrasonic transducer unit provided in the present application includes a backing layer, a heavy backing layer, a piezoelectric layer and a matching layer stacked in sequence, wherein the thickness of the piezoelectric layer ranges from 0.125 times the wavelength to 0.25 times the wavelength, and does not include a quarter wavelength; the wavelength refers to the wavelength of the wave of the center frequency of the ultrasonic transducer unit in the piezoelectric layer.

[0023] It can be seen that the ultrasonic transducer unit of the present application includes a backing layer, a heavy backing layer, a piezoelectric layer and a matching layer. The thickness of the piezoelectric layer is relatively thin, less than 0.25 times the wavelength, and is between 0.125 times the wavelength and 0.25 times the wavelength. According to the relationship between the thickness and area of ​​the piezoelectric layer, it can be seen that the area of ​​the piezoelectric layer will also have a larger room for reduction, thereby making it possible to produce a smaller ultrasonic transducer and realize product miniaturization. Since the thickness and area of ​​the voltage layer are reduced, the volume of the ultrasonic transducer unit becomes smaller, making the ultrasonic transducer unit have the characteristics of miniaturization. In addition, further thinning the piezoelectric layer can offset the influence of the acoustic impedance of the heavy backing layer on the composite impedance of the device, so that the actual energy output of the ultrasonic transducer unit is higher.

[0024] In addition, the present application also provides an ultrasonic transducer array and an ultrasonic therapeutic apparatus having the above advantages. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] In order to more clearly illustrate the embodiments of the present application or the technical solutions of the prior art, the following is a brief introduction to the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.

[0026] FIG1 is a structural schematic diagram 1 of an ultrasonic transducer unit provided in an embodiment of the present application;

[0027] FIG2 is a second structural diagram of an ultrasonic transducer unit provided in an embodiment of the present application;

[0028] FIG3 is a third structural diagram of an ultrasonic transducer unit provided in an embodiment of the present application;

[0029] FIG4 is a fourth structural diagram of an ultrasonic transducer unit provided in an embodiment of the present application;

[0030] FIG5 is a schematic structural diagram of an ultrasonic transducer array provided in an embodiment of the present application;

[0031] FIG6 is a diagram showing simulated data of the output waveform of the ultrasonic transducer unit under conditions of different heavy backing layer thicknesses.

[0032] In the figure, 100, ultrasonic transducer unit, 1, backing layer, 2, heavy backing layer, 3, piezoelectric layer, 4, matching layer, 5, conductive layer, 6, conductive channel, 7, gap. DETAILED DESCRIPTION

[0033] In order to enable those skilled in the art to better understand the present application, the present application is further described in detail below in conjunction with the accompanying drawings and specific embodiments. Obviously, the embodiments described are only a part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without making any creative efforts are within the scope of protection of the present application.

[0034] In the following description, many specific details are set forth to facilitate a full understanding of the present invention. However, the present invention may also be implemented in other ways different from those described herein. Those skilled in the art may make similar generalizations without violating the connotation of the present invention. Therefore, the present invention is not limited to the specific embodiments disclosed below.

[0035] As described in the background technology section, the thickness of the piezoelectric layer in the ultrasonic transducer unit of the related technology is one-quarter of the wavelength, which is still relatively thick. Moreover, according to the relationship between the thickness and area of ​​the piezoelectric layer, the area of ​​the piezoelectric layer is also relatively large, which leads to the relatively large volume of the ultrasonic transducer unit and is not easy to achieve miniaturization.

[0036] In view of this, the present application provides an ultrasonic transducer unit, as shown in FIG1 , comprising:

[0037] A backing layer 1, a heavy backing layer 2, a piezoelectric layer 3 and a matching layer 4 are stacked in sequence, wherein the thickness of the piezoelectric layer 3 ranges from 0.125 times the wavelength to 0.25 times the wavelength, excluding 0.25 times the wavelength.

[0038] The wavelength (λ) in this application refers to the wavelength of the wave of the center frequency of the ultrasonic transducer unit in the piezoelectric layer.

[0039] The ultrasonic transducer unit 100 in this embodiment may be a non-focused ultrasonic transducer or a focused ultrasonic transducer.

[0040] When a voltage is applied to the piezoelectric layer 3, it converts electrical energy into ultrasonic mechanical energy, generating ultrasonic waves. The ultrasonic waves generated by the piezoelectric layer 3 propagate both forward (from the piezoelectric layer 3 toward the matching layer 4) and backward (from the piezoelectric layer 3 toward the backing layer 1).

[0041] The backing layer 1 is used to absorb the vibration energy transmitted from the possible piezoelectric layer 3 toward the backing layer 1 , and serves as a structural support and a heat dissipation layer.

[0042] The material of the piezoelectric layer 3 includes, but is not limited to, ceramics, single crystals, polymers, such as lead zirconate titanate ceramics, single crystals formed by lead zirconate titanate niobium, and the like.

[0043] The thickness of the piezoelectric layer 3 ranges from 0.125 times the wavelength (λ / 8) to 0.25 times the wavelength (λ / 4). For example, the thickness of the piezoelectric layer 3 can be λ / 8, λ / 7, λ / 6, λ / 5, etc., and can be set as needed, but must be less than 0.25 times the wavelength. Preferably, the thickness of the piezoelectric layer 3 is 0.125λ-0.225λ.

[0044] Specifically, the presence of the heavy backing layer 2 blocks the vibration of the back surface of the piezoelectric layer 2. Its higher acoustic impedance and high acoustic velocity alter the "comprehensive vibration wavelength" of the entire unit device. Therefore, the thickness of the piezoelectric layer 2 must be less than 0.25λ to achieve maximum amplitude and energy output. Existing solutions that directly adopt a λ / 4 thickness ignore the effects of other layers on the piezoelectric layer's vibration characteristics and, as a result, fail to achieve maximum energy output.

[0045] To ensure that vibration occurs primarily in a direction perpendicular to the piezoelectric layer 3 and to reduce vibration in other directions, the area of ​​the piezoelectric layer 3 must be many times greater than its thickness. Increasing the thickness of the piezoelectric layer 3 significantly increases the lower limit of the area of ​​the piezoelectric layer 3. Compared to related art, the thickness of the piezoelectric layer 3 in this application is thinner, so the area of ​​the piezoelectric layer 3 can also be reduced, thereby reducing the overall volume of the ultrasonic transducer unit 100 and facilitating miniaturization.

[0046] The acoustic impedance of the matching layer 4 matches the acoustic impedance of the piezoelectric layer 3 so as to transmit the ultrasonic waves generated by the piezoelectric layer 3 to the maximum extent and reduce the loss of the ultrasonic waves.

[0047] As an implementation method, the matching layer 4 may have one layer; however, this application does not specifically limit this. As another implementation method, the matching layer 4 may have at least two layers. When the matching layer 4 has two layers, as shown in FIG2 .

[0048] When the number of matching layers 4 is at least two, the acoustic impedance of the matching layer 4 directly in contact with the piezoelectric layer 3 is greater than that of the piezoelectric layer 3 , so as to improve the penetration of the sound beam.

[0049] The heavy backing layer 2 blocks the backward vibration of the piezoelectric layer 3, converting the double-sided vibration of the piezoelectric layer 3 into a single-sided vibration. The contact surface of the heavy backing layer 2 with the piezoelectric layer 3 is a zero-displacement vibration surface. When the piezoelectric layer 3 vibrates, the displacement of this contact surface in the vibration direction is zero (including almost zero), thereby concentrating the vibration of the piezoelectric layer 3 on the surface facing the emission direction.

[0050] As an implementation method, the acoustic impedance of the heavy backing layer 2 is greater than the acoustic impedance of the piezoelectric layer 3 to enhance the ability of the heavy backing layer 2 to reflect ultrasonic waves.

[0051] To further enhance the reflection of backward-propagating ultrasound waves, allowing ultrasonic energy to be transmitted forward, thereby generating stronger signal sensitivity and reducing backside vibration, the difference in acoustic impedance between the heavy backing layer 2 and the piezoelectric layer 3 can be increased. In one embodiment, the acoustic impedance of the heavy backing layer 2 is 3 to 5 times the acoustic impedance of the piezoelectric layer 3. For example, the acoustic impedance of the heavy backing layer 2 can be 3, 4, or 5 times the acoustic impedance of the piezoelectric layer 3, depending on the specific situation.

[0052] Under different thicknesses of the heavy backing layer 2, the transmission response of the ultrasonic transducer unit has different characteristics in terms of output energy and different dimensions of the waveform. The simulation results are shown in Table 1.

[0053] As an implementation method, the thickness of the heavy backing layer 2 ranges from 0.25 times the wavelength to 1.25 times the wavelength, which can keep the emission response at a high level. Exemplarily, the thickness of the heavy backing layer 2 can be 0.25λ, 0.3λ, 0.5λ, 0.8λ, λ, 1.25λ, etc. When the thickness of the heavy backing layer 2 is less than 0.25λ, the ultrasonic wave will penetrate the heavy backing layer (the simulation data in Table 1 cannot reflect this, and the simulation model used cannot identify ultrasonic wave penetration), causing a large amount of energy to propagate backward instead of forward, and generate a large amount of heat; and when the thickness of the heavy backing layer 2 is greater than 1.25λ, it will cause serious energy attenuation, reducing the ultrasonic emission energy. Therefore, for ultrasonic therapeutic devices for the purpose of thermal effect treatment, the ultrasonic transducer unit of the present application preferably has a heavy backing layer with a thickness of 0.25λ-1.25λ. Although the output waveform of the ultrasonic transducer unit with a heavy backing layer contains more noise, the total output energy is higher. When the piezoelectric layer meets the requirements of 0.125λ-0.25λ (inclusive), it can have better treatment efficiency.

[0054] The heavy backing layer 2 has strong strength and can provide better mechanical support for the piezoelectric layer 3. In addition, the heavy backing layer 2 avoids being driven to vibrate by the piezoelectric layer 3, ensuring that it provides good acoustic reflection function for the piezoelectric layer 3, thereby effectively reducing the heat generated by the backing layer 1 absorbing the sound waves propagating toward it, ensuring the normal operation of the piezoelectric layer 3, and at the same time enhancing the energy output of the transducer.

[0055] Table 1

[0056] In an embodiment of the present invention, when the ultrasonic transducer is applied to a subdivided technical field of detection, in order to improve the detection sensitivity and reduce stray waves, the thickness of the heavy backing layer is preferably 5λ-10λ. As shown in Figure 6, it is a simulated data diagram of the output waveform of the ultrasonic transducer unit under different heavy backing layer thicknesses, wherein the horizontal axis is time and the vertical axis is amplitude. When the thickness of the heavy backing layer 2 is less than 5λ (for example, 2.5λ), the waveform presents multiple groups of beams, while when the thickness of the heavy backing layer 2 is 5λ, it is a single group of beams. In the field of detection applications, a single group of beams has less noise, is easier to identify, and has high sensitivity. When the thickness of the heavy backing layer 2 exceeds 10λ (for example, 20λ), the waveform will not change significantly, but the pulse width will become narrower, which is not conducive to measurement; in addition, the thickness is too large, which brings too much vibration impedance, resulting in insufficient overall energy output.

[0057] It should be noted that this embodiment does not limit the material of the heavy backing layer 2. As an implementation method, the material of the heavy backing layer 2 includes a metal material with good electrical conductivity, such as tungsten or a tungsten alloy (such as a carbon tungsten alloy), to enhance the electrical conductivity of the heavy backing layer 2, thereby better transferring the charge generated by the vibration of the piezoelectric layer 3 to the acoustic impedance interface.

[0058] The ultrasonic transducer unit 100 of this embodiment includes a backing layer 1, a heavy backing layer 2, a piezoelectric layer 3, and a matching layer 4. The piezoelectric layer 3 is relatively thin, ranging from 0.125 to 0.25 times the wavelength (exclusive). Based on the relationship between piezoelectric layer thickness and area, the area of ​​the piezoelectric layer 3 is also reduced accordingly. Since both the thickness and area of ​​the piezoelectric layer are reduced, the volume of the ultrasonic transducer unit 100 is reduced, making the ultrasonic transducer unit 100 miniaturized.

[0059] On the basis of the above embodiment, in one embodiment of the present application, referring to FIG3 , the ultrasonic transducer unit 100 further includes:

[0060] A conductive layer 5 is provided between the piezoelectric layer 3 and the heavy backing layer 2 .

[0061] The conductive layer 5 can be copper foil, gold foil, silver foil, etc.

[0062] The conductive layer 5 serves as one electrode of the piezoelectric layer 3 (the other electrode is between the piezoelectric layer 3 and the matching layer 4 ), and controls the potential difference between the upper and lower surfaces of the piezoelectric layer 3 by being electrically connected to a circuit (not shown).

[0063] In the structure of piezoelectric layer 3 - conductive layer 5 - heavy backing layer 2 - circuit, the heavy backing layer 2 can serve as a part of the circuit or simply be a non-electrical supporting structure.

[0064] It should be noted that, when the conductive performance of the heavy backing layer 2 is strong enough, for example, when the material of the heavy backing layer 2 is tungsten or a tungsten alloy, the conductive layer 5 may not be provided.

[0065] On the basis of any of the above embodiments, in one embodiment of the present application, as shown in FIG4 , the surface of the backing layer 1 away from the heavy backing layer 2 is a curved surface with a Gaussian curvature greater than zero.

[0066] On the one hand, the curved surface of the backing layer 1 can change the propagation path of the sound energy that is not fully absorbed after reflection. On the other hand, when the ultrasonic transducer unit 100 is packaged with the shell, the surface connected to the shell is a curved surface, which can reduce the occupied space and thus reduce the size of the shell.

[0067] In one embodiment, the backing layer 1 includes a cylindrical first portion facing away from the piezoelectric layer 3 and a curved, conical second portion, wherein the curved, conical second portion comprises an arc surface with a Gaussian curvature greater than zero. The curved, conical second portion can redirect acoustic waves, preventing them from returning and / or converging on the piezoelectric layer. The cylindrical first portion can dissipate energy during acoustic wave transmission, reducing potential reflected echoes.

[0068] The present application also provides an ultrasonic transducer array, which includes two or more ultrasonic transducer units 100 described in any of the above embodiments.

[0069] The ultrasonic transducer array can be a linear multi-element ultrasonic transducer array, that is, two or more ultrasonic transducer units 100 are arranged in a row; or the ultrasonic transducer array can be a two-dimensional array ultrasonic transducer array, that is, two or more ultrasonic transducer units 100 are arranged in the form of m rows × n columns, where m and n are integers greater than or equal to 2, and m and n can be equal or unequal.

[0070] As shown in FIG. 5 , a gap 7 is provided between adjacent ultrasonic transducer units 100 , and the gap 7 is filled with an insulating medium; wherein the gap 7 is distributed between the heavy backing layer 2 and the matching layer 4 .

[0071] The insulating medium can be an insulating material such as epoxy resin.

[0072] Filling with insulating medium can, on the one hand, enhance the strength of the ultrasonic transducer array and avoid breakage at the gap; on the other hand, it can also prevent short circuits.

[0073] The gap 7 does not extend into the matching layer 4 and the heavy backing layer 2, that is, the matching layers 4 of all ultrasonic transducer units 100 in the ultrasonic transducer array are connected together, which provides a better support effect. When the ultrasonic transducer unit 100 includes a conductive layer 5, the gap extends to the conductive layer 5.

[0074] The ultrasonic transducer unit 100 further includes a conductive channel 6 extending through the heavy backing layer 2. The conductive channel 6 is filled with a conductive medium and can connect the conductive layer 5 to an external control circuit to control the piezoelectric layer 3. In this embodiment, the heavy backing layer 2 does not serve as a conductive layer to avoid short circuits.

[0075] The present application also provides an ultrasonic therapeutic apparatus, which includes the ultrasonic transducer unit 100 or the ultrasonic transducer array described in any of the above embodiments.

[0076] The following describes a method for manufacturing the ultrasonic transducer unit 100 described in any of the above embodiments using a specific example.

[0077] Step 1: bonding two matching layers to the matching surface of the piezoelectric layer; wherein the piezoelectric layer can be a piezoelectric ceramic wafer;

[0078] Step 2: Use glue to bond a conductive layer on the other side of the piezoelectric layer. The conductive layer can be copper foil.

[0079] Step 3: bonding a heavy backing layer to the surface of the conductive layer;

[0080] Step 4: drilling holes on the surface of the heavy backing layer away from the conductive layer to the conductive layer, but not through the conductive layer; the drilling method can be laser cutting, wet etching or ion beam etching;

[0081] Step 5: Bond the conductive electrodes into the punched holes;

[0082] Step 6: Bond the backing layer onto the surface of the heavy backing layer.

[0083] The various embodiments in this specification are described in a progressive manner, and each embodiment focuses on the differences from other embodiments. The same or similar parts between the various embodiments can be referenced to each other.

[0084] The ultrasonic transducer unit, array, and ultrasonic therapeutic device provided by the present application are introduced in detail above. Specific examples are used herein to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the solution and core ideas of the present application. It should be pointed out that for ordinary technicians in this technical field, without departing from the principles of the present application, several improvements and modifications can be made to the present application, and these improvements and modifications also fall within the scope of protection of the present application.

Claims

1. An ultrasonic transducer unit, characterized in that: The method comprises a backing layer, a heavy backing layer, a piezoelectric layer and a matching layer stacked in sequence, wherein the thickness of the piezoelectric layer ranges from 0.125 times the wavelength to 0.25 times the wavelength, excluding 0.25 times the wavelength; The contact surface between the heavy backing layer and the piezoelectric layer is a vibration zero displacement surface. When the piezoelectric layer vibrates, the displacement of the contact surface in the vibration direction is zero. The wavelength refers to the wavelength of a wave of the center frequency of the ultrasonic transducer unit in the piezoelectric layer.

2. The ultrasonic transducer unit according to claim 1, wherein The thickness of the heavy backing layer ranges from five times the wavelength to ten times the wavelength.

3. The ultrasonic transducer unit according to claim 1, wherein The thickness of the heavy backing layer ranges from 0.25 times the wavelength to 1.25 times the wavelength.

4. The ultrasonic transducer unit according to claim 1, wherein The acoustic impedance of the heavy backing layer is greater than the acoustic impedance of the piezoelectric layer.

5. The ultrasonic transducer unit according to claim 4, characterized in that The acoustic impedance of the heavy backing layer is 3 to 5 times the acoustic impedance of the piezoelectric layer.

6. The ultrasonic transducer unit according to claim 1, wherein The material of the heavy backing layer includes tungsten or tungsten alloy.

7. The ultrasonic transducer unit according to claim 1, wherein: Also includes: A conductive layer is disposed between the piezoelectric layer and the heavy backing layer.

8. The ultrasonic transducer unit according to claim 1, wherein The matching layer has at least two layers, and the acoustic impedance of the matching layer in direct contact with the piezoelectric layer is greater than that of the piezoelectric layer.

9. The ultrasonic transducer unit according to any one of claims 1 to 8, characterized in that: The surface of the backing layer away from the heavy backing layer is a curved surface with a Gaussian curvature greater than zero.

10. An ultrasonic transducer array, characterized in that: The ultrasonic transducer array includes two or more ultrasonic transducer units according to any one of claims 1 to 9.

11. The ultrasonic transducer array according to claim 10, wherein: A gap is provided between adjacent ultrasonic transducer units, and the gap is filled with an insulating medium; wherein the gap is distributed between the heavy backing layer and the matching layer; and the ultrasonic transducer unit further includes a conductive channel penetrating the heavy backing layer.

12. An ultrasonic therapeutic apparatus, characterized in that: The ultrasonic therapeutic apparatus includes the ultrasonic transducer unit according to any one of claims 1 to 9, or the ultrasonic therapeutic apparatus includes the ultrasonic transducer array according to any one of claims 10 to 11.

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