Electron source module and electron-beam direct writing machine

Abstract

Provided in the present application are an electron source module and an electron-beam direct writing machine. The electron source module comprises: an array-type electron source substrate (1), wherein a plurality of electron emission units (1-3) are formed on a first main surface (1-1) of the array-type electron source substrate; an electron source control circuit substrate (2), wherein a plurality of control circuit units (2-3) are formed on the electron source control circuit substrate, and each control circuit unit controls an electron emission state of at least one corresponding electron emission unit; and a local temperature control mechanism (3), which controls the temperature of the electron source control circuit substrate (2). In the present application, a local temperature control mechanism is provided to control the temperature of an electron source control circuit substrate in an electron source module, thereby improving the reliability of the electron source module.

Description

Electron source module and electron beam direct writer Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular to an electron source module and an electron beam direct writing machine. Background Art

[0002] The development of the semiconductor microfabrication industry is placing increasing demands on electron beam direct writing technology. These requirements include ensuring the accuracy of fine pattern imaging and significantly increasing direct writing speeds. To meet these industry demands, multi-electron beam direct writing technology is rapidly developing and playing an irreplaceable role in the direct writing of fine patterns in the integrated circuit manufacturing process.

[0003] Specifically, in semiconductor manufacturing, the imaging of high-tech node patterns (including patterns on photomasks and structural patterns at various device levels) requires both finer and more accurate direct writing and high-speed direct writing despite the dramatic increase in pattern data volume. To accurately write fine patterns, the electron beam spot size must be reduced to facilitate precise scanning. While maintaining a constant current density, reducing the electron beam spot size means reducing the electron beam current, which results in longer direct writing times. Furthermore, when the pattern size to be written is below tens of nanometers, the smaller the line width, the more significant the impact of shot noise, seriously impacting critical line width uniformity and line edge roughness. To ensure that critical line width uniformity and line edge roughness for small line width patterns meet product performance requirements, electron beam photoresists with lower sensitivity are used for smaller line widths during direct writing. Consequently, smaller line widths require larger direct writing exposures. This means that, while maintaining a constant current density, smaller line widths require longer direct writing times. To increase the throughput of electron beam direct writing equipment per unit time, a multi-beam direct writer, which uses multiple electron beams to write simultaneously, has become a necessary tool. To meet actual needs, a multi-beam direct writer needs to have hundreds of thousands of electron beams.

[0004] Currently, practical multi-electron beam direct writers generally use a single electron source, splitting the source electron beam emitted from this single electron source into multiple direct-writing electron beams. To increase the current density of the direct-writing electron beam, the total current of the source electron beam needs to be increased. However, increasing the total current of the source electron beam is difficult, and the increase in the current density of each direct-writing electron beam is relatively limited. Furthermore, since switching these split direct-writing electron beams cannot be performed at the source, beam blankers must be added to the electron optical system to allow or block the electron beams.

[0005] However, the introduction of the electron beam gate makes the entire electron beam direct writing machine system very complicated, and it is also easy to generate problems such as electrification near the electron beam gate. The electron source disclosed in Reference 1 (Reference 1: Japanese Journal of Applied Physics 61, SD0807 (2022), https: / / doi.org / 10.35848 / 1347-4065 / ac4ce1) adopts an array electron source. Each electron beam of this array electron source is emitted by a separate electron source unit, and the switch of each electron source unit can be controlled by the corresponding electron source control circuit unit. Such an array electron source not only avoids the use of an electron beam gate, but also may make the electron beam direct writing machine system simpler.

[0006] It should be noted that the above introduction to the technical background is merely intended to provide a clear and complete description of the technical solutions of this application and facilitate understanding by those skilled in the art. Simply because these solutions are described in the background technology section of this application, it should not be assumed that the above technical solutions are well known to those skilled in the art. Summary of the Invention

[0007] The inventors have discovered that the technical solution using an array electron source has some limitations, such as:

[0008] Because it is necessary to control the switches of multiple electron source units, the electron source control circuit needs to perform signal switching at high speed, which will generate a certain amount of waste heat while consuming energy. This waste heat will cause the electron source control circuit and the electron source adjacent to it to heat up, and may also cause thermal deformation of other electron beam direct writing machine components around it, thereby affecting the direct writing accuracy and other performance of the electron beam direct writing machine and even causing it to malfunction; therefore, the waste heat generated by the electron source control circuit needs to be removed in time; when the waste heat generated by the electron source control circuit is relatively large, the overall temperature control system of the electron beam direct writing machine will not be able to remove this waste heat in time, thereby failing to keep the temperature of the electron source control circuit, the electron source and the components nearby within the required range.

[0009] In order to solve the above problems or at least similar problems, an embodiment of the present application provides an electron source module and an electron beam direct writing machine, and a local temperature control mechanism is set to control the temperature of the electron source control circuit substrate in the electron source module, thereby improving the reliability of the electron source module.

[0010] According to one aspect of an embodiment of the present application, there is provided an electron source module (10), comprising:

[0011] An array type electron source substrate (1), wherein a plurality of electron emission units (1-3) are formed on a first main surface (1-1) of the array type electron source substrate;

[0012] an electron source control circuit substrate (2), on which a plurality of control circuit units (2-3) are formed, each of the control circuit units controlling the electron emission state of at least one corresponding electron emission unit; and

[0013] A local temperature control mechanism (3) controls the temperature of the electron source control circuit substrate (2).

[0014] In some embodiments, the local temperature control mechanism comprises:

[0015] a temperature measuring unit (4) for measuring the temperature of the electron source control circuit substrate (2);

[0016] a temperature control unit (5) which receives the temperature signal from the temperature measuring unit, compares the temperature signal with a preset temperature value and makes a heat exchange decision;

[0017] A heat exchange unit (6) controls the heat input and output of the electron source control circuit substrate (2) through heat conduction according to the heat exchange decision.

[0018] In some embodiments, the heat exchange unit comprises:

[0019] a refrigerant control mechanism that controls the temperature and delivery of the refrigerant according to the heat exchange decision; and

[0020] A heat exchanger (7), wherein the electron source control circuit substrate exchanges heat with the refrigerant through the heat exchanger.

[0021] The first main surface (7-1) of the heat exchanger (7) is in close contact with the second main surface (2-2) of the electron source control circuit substrate, and the second main surface (7-2) of the heat exchanger is in close contact with the refrigerant; the refrigerant flows through the second main surface (7-2) of the heat exchanger under the control of the refrigerant control mechanism.

[0022] In some embodiments, the refrigerant is an insulating gas, an insulating liquid, or a mixture of an insulating gas and an insulating liquid.

[0023] In some embodiments, the first main surface of the heat exchanger (7) is in close contact with the second main surface of the electron source control circuit substrate by semiconductor substrate bonding;

[0024] The bonding includes direct bonding or indirect bonding through an intermediate layer;

[0025] The intermediate layer is a bonding glue, or a metal including any one of copper, gold, tin and aluminum, or an alloy including two or more of copper, gold, tin, aluminum and germanium, or a semiconductor material including silicon or a silicon compound.

[0026] In some embodiments, the heat exchanger (7) is a microfluidic chip, and the microfluidic chip includes a plurality of microchannels formed on a silicon substrate;

[0027] The first main surface of the silicon substrate is in close contact with the second main surface of the electron source control circuit substrate, and the second main surface of the silicon substrate is in close contact with the refrigerant;

[0028] The microchannel has an opening on the second main surface of the silicon substrate and extends toward the first main surface of the silicon substrate;

[0029] The microchannel penetrates the first main surface of the silicon substrate, or does not penetrate the first main surface of the silicon substrate.

[0030] In some embodiments, the width of the microchannel is between 10 micrometers and 200 micrometers, and the depth thereof is between 50 micrometers and 800 micrometers.

[0031] In some embodiments, the heat exchange unit includes a thermoelectric conversion device.

[0032] In some embodiments, the heat exchanger comprises metal plates.

[0033] In some embodiments, the thickness of the electron source control circuit substrate is between 50 microns and 400 microns.

[0034] In some embodiments, the second main surface of the array-type electron source substrate is closely bonded to the first main surface of the electron source control circuit substrate by substrate bonding.

[0035] In some embodiments, the electrode of each electron emission unit is connected to the surface of the second main surface of the array-type electron source substrate through a corresponding through-silicon via.

[0036] Each of the control circuit units (2-3) is electrically connected to a corresponding electrode pad (2-4) formed on the first main surface of the electron source control circuit substrate.

[0037] The through silicon via is bonded to and electrically connected to the corresponding electrode pad.

[0038] The conductive portion of the through silicon via includes at least one of a metal, an alloy, a single crystal silicon column, and a polycrystalline silicon column.

[0039] In some embodiments, the electron source control circuit substrate (2) and the array electron source substrate (1) are respectively bonded to an interconnection substrate to form a co-integrated structure, wherein:

[0040] The electron source control circuit substrate and the array electron source substrate are electrically connected via metal leads; or

[0041] An interconnection circuit is formed on the interconnection substrate, and electrical communication between the electron source control circuit substrate and the array electron source substrate is achieved through the interconnection circuit.

[0042] In some embodiments, an electron beam direct writer is provided, wherein the electron source of the electron beam direct writer has the electron source module described in any of the above embodiments.

[0043] The beneficial effect of the present application is that by providing a local temperature control mechanism, the waste heat emitted by the electron source control circuit during operation is promptly removed, so that the temperature of the electron source control circuit is maintained within the required range, thereby ensuring the normal operation of the electron source control circuit and the array electron source, and ensuring that the components near the electron source control circuit and the array electron source do not produce thermal deformation beyond the range, thereby improving the performance of the electron beam direct writing machine.

[0044] With reference to the following description and accompanying drawings, specific embodiments of the present application are disclosed in detail, indicating the manner in which the principles of the present application can be employed. It should be understood that the embodiments of the present application are not limited in scope. Within the spirit and scope of the appended claims, the embodiments of the present application include many variations, modifications and equivalents.

[0045] Features described and / or illustrated with respect to one embodiment may be used in the same or similar manner in one or more other embodiments, combined with features in other embodiments, or substituted for features in other embodiments.

[0046] It should be emphasized that the term "include / comprising" when used herein refers to the presence of features, integers, steps or components, but does not exclude the presence or addition of one or more other features, integers, steps or components. BRIEF DESCRIPTION OF THE DRAWINGS

[0047] The included drawings are used to provide a further understanding of the embodiments of the present application, which constitute a part of the specification, are used to illustrate the implementation methods of the present application, and together with the text description, explain the principles of the present application. Obviously, the drawings described below are only some embodiments of the present application. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without inventive work. In the drawings:

[0048] FIG1 is a schematic diagram of an electron source module of the present application;

[0049] FIG2 is another schematic diagram of the electron source module of the present application;

[0050] FIG3 is another schematic diagram of the electron source module of the present application;

[0051] FIG4 is another schematic diagram of the electron source module of the present application;

[0052] FIG. 5 is a schematic diagram of an example of a heat exchanger of the electron source module of the present application. DETAILED DESCRIPTION

[0053] The above and other features of the present application will become apparent through the following description with reference to the accompanying drawings. In the description and the accompanying drawings, specific embodiments of the present application are disclosed in detail, which illustrate some embodiments in which the principles of the present application can be adopted. It should be understood that the present application is not limited to the described embodiments. On the contrary, the present application includes all modifications, variations and equivalents that fall within the scope of the appended claims.

[0054] In various embodiments of the application, "ON" of the electron source unit corresponds to the electron source unit emitting an electron beam, and "OFF" of the electron source unit corresponds to the electron source unit not emitting an electron beam.

[0055] In the description of each embodiment of the present application, for the convenience of description, the direction parallel to the surface of the array-type electron source substrate is called "horizontal", and the direction perpendicular to the surface of the array-type electron source substrate is called "longitudinal", and the dimension in the "longitudinal" direction can be called "height" or "thickness"; in the "longitudinal", the direction from the array-type electron source substrate to the electron source control circuit substrate is called the "up" direction, and the opposite direction of the "up" direction is the "down" direction.

[0056] It should be noted that the above-mentioned “up” and “down” directions are only for the convenience of explanation and do not limit the orientation or posture of the electron source module of the present application during manufacture or use.

[0057] Example

[0058] An embodiment of the present application provides an electron source module.

[0059] FIG1 is a schematic diagram of the electron source module of the present application. As shown in FIG1 , the electron source module 10 includes: an array electron source substrate 1 , an electron source control circuit substrate 2 , and a local temperature control mechanism 3 .

[0060] A plurality of electron emission units 1-3 are formed on a first main surface 1-1 of the array-type electron source substrate 1. Each electron emission unit 1-3 can emit electrons.

[0061] A plurality of control circuit units 2-3 are formed on the first main surface 2-1 of the electron source control circuit substrate 2. Each control circuit unit 2-3 controls the electron emission state of at least one corresponding electron emission unit 1-3. The electron emission state includes emitting electrons, not emitting electrons, and the magnitude of the current generated by the emitted electrons. It should be noted that in the example shown in FIG1 , the plurality of control circuit units 2-3 are formed on the first main surface 2-1 of the electron source control circuit substrate 2 (e.g., the bottom surface of the electron source control circuit substrate 2). However, the present application is not limited to this. For example, the plurality of control circuit units 2-3 may be formed on the second main surface 2-2 of the electron source control circuit substrate 2; or, the plurality of control circuit units 2-3 may be formed inside the electron source control circuit substrate 2 (i.e., at a certain distance from both the first main surface 2-1 and the second main surface 2-2).

[0062] The thickness of the electron source control circuit substrate 2 is between 50 micrometers and 400 micrometers. In a specific example, the thickness of the electron source control circuit substrate 2 is 100 micrometers.

[0063] The local temperature control mechanism 3 can control the temperature of the electron source control circuit substrate 2 .

[0064] FIG2 is another schematic diagram of the electron source module of the present application. FIG2 shows an implementation state of the local temperature control mechanism 3 included in the electron source module 10 of the present application. In addition, the electron source module 10 of FIG2 has the same array-type electron source substrate 1 as FIG1.

[0065] In the embodiment shown in FIG2 , the local temperature control mechanism 3 includes a temperature measuring unit 4, a temperature control unit 5, and a heat exchange unit 6. The temperature measuring unit 4 is a temperature sensor in close contact with the electron source control circuit substrate 2, which can measure the temperature of the electron source control circuit 2 and transmit the temperature signal to the temperature control unit 5. The temperature control unit 5 receives the temperature signal from the temperature measuring unit 4, compares it with the preset temperature value, and makes a heat exchange decision. In some examples, the preset temperature value is lower than 273K, specifically, the preset temperature value is lower than 100K; in a special case, the preset temperature value is 77K. The heat exchange unit 6 controls the heat input and output of the electron source control circuit substrate 2 by heat conduction according to the heat exchange decision signal from the temperature control unit 5, so that the temperature of the electron source control circuit substrate 2 is kept near the preset temperature value.

[0066] In some examples, the heat exchange unit 6 may include a thermoelectric conversion device, and thus, by controlling the voltage or current of the thermoelectric conversion device to adjust the temperature of the thermoelectric conversion device, heat exchange can be performed with the electron source control circuit substrate 2. For example, by applying a certain voltage or current to the thermoelectric conversion device, the temperature of the thermoelectric conversion device is reduced or heat is absorbed by the thermoelectric conversion device, so that the thermoelectric conversion device can exchange heat with the electron source control circuit substrate 2 to reduce the temperature of the electron source control circuit substrate 2.

[0067] FIG3 is another schematic diagram of the electron source module of the present application. FIG3 shows an implementation state of the local temperature control mechanism 3 included in the electron source module 10 of the present application. In addition, the electron source module 10 of FIG3 has the same array-type electron source substrate 1 as FIG1.

[0068] In the embodiment shown in FIG. 3 , the heat exchange unit 6 may include a heat exchanger 7 .

[0069] In some examples, the heat exchanger 7 may be a solid structure, which may include a metal plate. The metal plate has good thermal conductivity and facilitates heat exchange with the electron source control circuit substrate 2. In addition, in some embodiments, the solid structure may also include a columnar array, which is conducive to improving the efficiency of heat exchange. The columnar array and the metal plate may be made of the same material.

[0070] In some embodiments, in addition to the heat exchanger 7, the heat exchange unit 6 may further include a refrigerant control mechanism (not shown). The refrigerant control mechanism includes a refrigerant temperature regulating mechanism and a refrigerant transport mechanism. For example, the refrigerant control mechanism can control the temperature and transport of the refrigerant according to the heat exchange decision of the temperature control unit 5. For the sake of simplicity, the refrigerant control mechanism and the refrigerant are not shown in this figure, and reference can be made to the refrigerant control mechanisms commonly used in semiconductor devices. The refrigerant is an insulating gas, or liquid, or a mixture thereof with good thermal conductivity and fluidity. Under certain requirements, the refrigerant has good electrical insulation. For example, the refrigerant includes liquid nitrogen or liquid helium.

[0071] Heat exchanger 7 is used to exchange heat between electron source control circuit 2 and the refrigerant, thereby maintaining the temperature of electron source control circuit 2 near a predetermined value. For example, a first principal surface 7-1 of heat exchanger 7 is in close contact with a second principal surface 2-2 of electron source control circuit substrate 2, while a second principal surface 7-2 of heat exchanger 7 is in close contact with the refrigerant (not shown). The refrigerant flows through second principal surface 7-2 of heat exchanger 7 under the control of the refrigerant control mechanism.

[0072] In this embodiment, the first main surface 7-1 of the heat exchanger 7 and the second main surface 2-2 of the electron source control circuit substrate 2 are closely bonded by semiconductor substrate bonding. This bonding is a direct bonding between the two, or an indirect bonding via an intermediate layer. The intermediate layer is a bonding glue, or a metal including any one of copper, gold, tin, and aluminum, or an alloy including any two or more materials such as copper, gold, tin, aluminum, and germanium, or a semiconductor material including silicon and silicon compounds. In addition, the present application is not limited to this, and the first main surface 7-1 of the heat exchanger 7 and the second main surface 2-2 of the electron source control circuit substrate 2 can also be closely bonded by other means.

[0073] FIG4 is another schematic diagram of the electron source module of the present application. FIG4 shows another embodiment of the electron source module 10 of the present invention. In the embodiment shown in FIG4 , the first main surface 7-1 of the heat exchanger 7 and the second main surface 2-2 of the electron source control circuit substrate 2 are closely bonded by a semiconductor substrate bonding method. The bonding is a direct bonding between the two, or an indirect bonding through an intermediate layer. The intermediate layer is a bonding glue, or a metal including any one of copper, gold, tin, and aluminum, or an alloy including any two or more materials such as copper, gold, tin, aluminum, and germanium, or a semiconductor material including silicon and silicon compounds.

[0074] In the embodiment shown in FIG4 , the second principal surface 1-2 of the arrayed electron source substrate 1 is closely bonded to the first principal surface 2-1 of the electron source control circuit substrate 2 via substrate bonding, which can be a through-silicon via (TSV) bonding method. For example, the electrode of each electron emission unit 1-3 is connected to the surface of the second principal surface 1-2 of the arrayed electron source substrate via a corresponding TSV 1-4; each control circuit unit 2-3 is electrically connected to a corresponding electrode pad formed on the surface of the first principal surface 2-1 of the electron source control circuit substrate 2; and the TSV 1-4 is bonded to and electrically connected to the corresponding electrode pad 2-4. The bonding between the TSV 1-4 and the corresponding electrode pad 2-4 can be direct or indirect, such as by solder balls. The conductive portion of the TSV 1-4 can be made of metal or alloy, or a highly conductive single-crystal silicon pillar or polycrystalline silicon pillar.

[0075] Furthermore, in the present application, the connection method of the arrayed electron source substrate 1 and the electron source control circuit substrate 2 is not limited to that shown in FIG4 . For example, in some examples, the electron source control circuit substrate 2 and the arrayed electron source substrate 1 can be respectively bonded to the same interconnect substrate to form a co-integrated structure, wherein the electron source control circuit substrate 2 and the arrayed electron source substrate 1 can be respectively bonded to the same surface or different surfaces of the interconnect substrate.

[0076] In this co-integrated structure: the electron source control circuit substrate 1 and the array electron source substrate 2 are electrically connected through metal leads; or, an interconnection line is formed on the interconnection substrate, and the electron source control circuit substrate 1 and the array electron source substrate 2 are electrically connected through the interconnection line.

[0077] Fig. 5 is a schematic diagram of an example of a heat exchanger of the electron source module of the present application. Fig. 5A) is a plan view of the heat exchanger 7, and Fig. 5B) is a cross-sectional view of the heat exchanger 7 along line AA'.

[0078] As shown in A) and B) of Figure 5, in some examples, the heat exchanger 7 can be a microfluidic chip, which can include: a silicon substrate 8 and a plurality of microchannels 9 formed on the second main surface 8-2 of the silicon substrate 8. The microchannels 9 have openings on the second main surface 8-2 of the silicon substrate 8 and extend toward the first main surface 8-1 of the silicon substrate 8. The microchannels 9 may not penetrate the first main surface 8-1 of the silicon substrate, or they may penetrate the first main surface 8-1 of the silicon substrate 8. For example, the width of the microchannels 9 is between 10 microns and 200 microns, and the depth of the microchannels 9 is between 50 microns and 800 microns. In a special case, the thickness of the silicon substrate 8 is 500 microns, the width of the microchannels 9 is 50 microns, and the depth of the microchannels 9 is 400 microns.

[0079] During use, the first principal surface 8-1 of the silicon substrate 8 is in close contact with the second principal surface 2-2 of the electron source control circuit substrate 2. The second principal surface 8-2 of the silicon substrate 8 is in close contact with the refrigerant, allowing the refrigerant to enter the microchannels 9. Because the silicon substrate 8 has good thermal conductivity, the microchannels 9 increase the contact area between the silicon substrate 8 and the refrigerant and bring the refrigerant closer to the electron source control circuit substrate 2. This structure has higher thermal conductivity efficiency and facilitates heat exchange between the refrigerant and the electron source control circuit substrate 2.

[0080] The present application also provides an electron beam direct writer, wherein the electron source of the electron beam direct writer includes the electron source module 10 described in the above embodiment.

[0081] In the present application, a local temperature control mechanism is provided to promptly remove the excess heat generated by the electron source control circuit during operation, so that the temperature of the electron source control circuit is maintained within the required range, thereby ensuring the normal operation of the electron source control circuit and the array electron source, and ensuring that the components near the electron source control circuit and the array electron source do not produce thermal deformation beyond the range, thereby improving the performance of the electron beam direct writing machine.

[0082] The present application has been described above in conjunction with specific embodiments. However, those skilled in the art should understand that these descriptions are merely illustrative and are not intended to limit the scope of protection of the present application. Those skilled in the art may make various modifications and variations to the present application based on the spirit and principles of the present application, and such modifications and variations are also within the scope of the present application.

Claims

1. An electron source module (10), characterized in that: The electron source module includes: An array type electron source substrate (1), wherein a plurality of electron emission units (1-3) are formed on a first main surface (1-1) of the array type electron source substrate; an electron source control circuit substrate (2), on which a plurality of control circuit units (2-3) are formed, each of the control circuit units controlling the electron emission state of at least one corresponding electron emission unit; and A local temperature control mechanism (3) controls the temperature of the electron source control circuit substrate (2).

2. The electron source module according to claim 1, wherein: The local temperature control mechanism includes: a temperature measuring unit (4) for measuring the temperature of the electron source control circuit substrate (2); a temperature control unit (5) which receives the temperature signal from the temperature measuring unit, compares the temperature signal with a preset temperature value and makes a heat exchange decision; A heat exchange unit (6) controls the heat input and output of the electron source control circuit substrate (2) through heat conduction according to the heat exchange decision.

3. The electron source module according to claim 2, characterized in that: The heat exchange unit comprises: a refrigerant control mechanism that controls the temperature and delivery of the refrigerant according to the heat exchange decision; and A heat exchanger (7), wherein the electron source control circuit substrate exchanges heat with the refrigerant through the heat exchanger. The first main surface (7-1) of the heat exchanger (7) is in close contact with the second main surface (2-2) of the electron source control circuit substrate, and the second main surface (7-2) of the heat exchanger is in close contact with the refrigerant; the refrigerant flows through the second main surface (7-2) of the heat exchanger under the control of the refrigerant control mechanism.

4. The electron source module according to claim 3, wherein: The refrigerant is an insulating gas, an insulating liquid, or a mixture of an insulating gas and an insulating liquid.

5. The electron source module according to claim 3, wherein: The first main surface of the heat exchanger (7) and the second main surface of the electron source control circuit substrate are closely bonded via semiconductor substrate bonding; The bonding includes direct bonding or indirect bonding through an intermediate layer; The intermediate layer is a bonding glue, or a metal including any one of copper, gold, tin and aluminum, or an alloy including two or more of copper, gold, tin, aluminum and germanium, or a semiconductor material including silicon or a silicon compound.

6. The electron source module according to any one of claims 3 to 5, characterized in that: The heat exchanger (7) is a microfluidic chip, and the microfluidic chip includes a plurality of microchannels formed on a silicon substrate; The first main surface of the silicon substrate is in close contact with the second main surface of the electron source control circuit substrate, and the second main surface of the silicon substrate is in close contact with the refrigerant; The microchannel has an opening on the second main surface of the silicon substrate and extends toward the first main surface of the silicon substrate; The microchannel penetrates the first main surface of the silicon substrate, or does not penetrate the first main surface of the silicon substrate.

7. The electron source module according to claim 6, wherein: The width of the microchannel is between 10 micrometers and 200 micrometers, and the depth thereof is between 50 micrometers and 800 micrometers.

8. The electron source module according to claim 3, wherein: The heat exchange unit includes a thermoelectric conversion device.

9. The electron source module according to claim 3, wherein: The heat exchanger comprises metal plates.

10. The electron source module according to claim 1, wherein: The thickness of the electron source control circuit substrate is between 50 microns and 400 microns.

11. The electron source module according to claim 1, wherein: The second main surface of the array-type electron source substrate and the first main surface of the electron source control circuit substrate are closely bonded by substrate bonding.

12. The electron source module according to claim 11, wherein: The electrode of each electron emission unit is connected to the surface of the second main surface of the array-type electron source substrate through a corresponding silicon through-hole. Each of the control circuit units (2-3) is electrically connected to a corresponding electrode pad (2-4) formed on the first main surface of the electron source control circuit substrate. The through silicon via is bonded to and electrically connected to the corresponding electrode pad. The conductive portion of the through silicon via includes at least one of a metal, an alloy, a single crystal silicon column, and a polycrystalline silicon column.

13. The electron source module according to claim 1, wherein: The electron source control circuit substrate (2) and the array electron source substrate (1) are respectively bonded to an interconnection substrate to form a co-integrated structure, wherein: The electron source control circuit substrate and the array electron source substrate are electrically connected via metal leads; or An interconnection circuit is formed on the interconnection substrate, and electrical communication between the electron source control circuit substrate and the array electron source substrate is achieved through the interconnection circuit.

14. An electron beam direct writing machine, characterized in that: The electron source of the electron beam direct writer includes the electron source module according to any one of claims 1 to 13.

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