Photovoltaic device, photovoltaic module, power generation device, and electric device
By setting up multiple electron transport layers and oxide buffer layers in photovoltaic devices, the problem of low energy level matching between the perovskite absorption layer and the electrode is solved, and the stability and energy conversion efficiency of the device are improved.
Patent Information
- Application Number
- PCT/CN2024/117042
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2024-04-03
- Filing Date
- 2024-09-05
- Publication Date
- 2025-10-09
AI Technical Summary
Existing photovoltaic devices have poor device stability and energy conversion efficiency, especially the low energy level matching between the perovskite absorption layer and the electrode, resulting in low electron transfer efficiency.
An electron transport layer and an oxide buffer layer are arranged between the perovskite absorption layer and the first electrode. The electron transport layer is a multi-layer composite structure, including a first organic layer and a second organic layer. The first organic layer is a non-polymer and the second organic layer is a polymer. The oxide buffer layer is located between the second organic layer and the first electrode to improve energy level matching and device stability.
It improves the energy level matching between the perovskite absorption layer and the electrode, enhances the electron transmission efficiency and device stability, and further improves the energy conversion efficiency of photovoltaic devices.
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Figure CN2024117042_09102025_PF_FP_ABST
Abstract
Description
Photovoltaic devices, photovoltaic modules, power generation devices and power consumption devices
[0001] CROSS-REFERENCE TO RELATED APPLICATIONS
[0002] This application claims priority to Chinese patent application No. 202410405251.1, filed on April 3, 2024, entitled “Photovoltaic devices, photovoltaic modules, power generation devices and power-using devices,” the entire contents of which are incorporated herein by reference. Technical Field
[0003] The present application belongs to the technical field of solar cells, and in particular relates to a photovoltaic device, a photovoltaic module, a power generation device and an electricity-consuming device. Background Art
[0004] Solar cells are photovoltaic devices that use perovskite materials as light-absorbing layers. They have excellent photoelectric properties and simple preparation methods, bringing new space and hope for photovoltaic power generation.
[0005] However, the device stability and energy conversion efficiency of photovoltaic devices are still relatively poor and need to be further improved.
[0006] Summary of the Invention
[0007] The embodiments of the present application provide a photovoltaic device, a photovoltaic module, a power generation device and a power consumption device, which can improve the energy conversion efficiency and device stability of the photovoltaic device.
[0008] In a first aspect, an embodiment of the present application provides a photovoltaic device, which includes a perovskite absorption layer, a first electrode, an electron transport layer and an oxide buffer layer, wherein the electron transport layer is arranged between the perovskite absorption layer and the first electrode, the electron transport layer includes a first organic layer and a second organic layer, the first organic layer is arranged on the perovskite absorption layer, and the second organic layer is arranged on the side of the first organic layer away from the perovskite absorption layer, the first organic layer includes a non-polymer, and the second organic layer includes a polymer; the oxide buffer layer is arranged between the second organic layer and the first electrode.
[0009] Therefore, the photovoltaic device of the embodiment of the present application is provided with an electron transport layer and a buffer layer between the perovskite absorption layer and the first electrode, which can improve the energy level matching between the perovskite absorption layer and the first electrode, and improve the photoelectric conversion efficiency of the photovoltaic device. Specifically, the electron transport layer includes a first organic layer and a second organic layer. The non-polymer in the first organic layer has good film-forming properties on the surface of the perovskite absorption layer, which can effectively passivate the defects of the perovskite absorption layer and is conducive to the film formation of the second organic layer; the polymer in the second organic layer has high self-stability, which can improve the overall structural stability of the electron transport layer. The first organic layer and the second organic layer are used in combination, which is conducive to the electron transfer of the electron transport layer; the oxide buffer layer is located between the second organic layer and the first electrode. The second organic layer can achieve an effective transition of energy levels between the first organic layer and the oxide buffer layer, and can achieve effective bonding between the first organic layer and the oxide buffer layer, thereby improving the stability of the device. The oxide buffer layer can further improve the carrier transmission efficiency and device stability, thereby further improving the energy conversion efficiency of the photovoltaic device.
[0010] In some embodiments, the non-polymer includes a non-fullerene organic molecular acceptor. The energy level of the non-fullerene organic molecular acceptor is easily regulated, which is conducive to matching the energy level of the perovskite absorber layer.
[0011] In some embodiments, the non-polymer includes one or more of imide substances, heterocyclic substances, and aromatic ring substances. The energy levels of these substances are easily regulated, which is conducive to matching the energy levels of the perovskite absorption layer.
[0012] In some embodiments, the imide-based material includes one or more of perylene imide, naphthalene diimide, and acenaphthenequinone dicarboximide. The energy levels of these materials are easily regulated, which is conducive to matching the energy levels of the perovskite absorber layer.
[0013] In some embodiments, the heterocyclic material includes one or more of pyrrolidones, hexaazanaphthalenes, quinolines, thiophenes, triazines, pyridines, and hexaazatriphenylenes. The energy levels of these materials are easily regulated, facilitating energy level matching with the perovskite absorber layer.
[0014] In some embodiments, the pyrrolidone-based substance includes one or more of naphthodipyrrolidone and diketopyrrolopyrrole. The energy levels of the above-mentioned substances are easily regulated, which is conducive to matching the energy levels of the perovskite absorption layer.
[0015] In some embodiments, the hexaazanaphthyl material comprises a hexaazanaphthyl host and a substituent group attached to the hexaazanaphthyl host, wherein the substituent group comprises one or more of a fluorine atom, a sulfoxide group, and a sulfone group. The energy levels of these materials are easily regulated, facilitating energy level matching with the perovskite absorber layer.
[0016] In some embodiments, the quinoline-based material comprises a quinoline main body and a substituent group attached to the quinoline main body, wherein the substituent group comprises one or more of a fluorine atom, a sulfoxide group, and a sulfone group. The energy level of the above-mentioned material is easily regulated, which facilitates matching the energy level of the perovskite absorber layer.
[0017] In some embodiments, the thiophene-based material includes a thiophene main body and a substituent group attached to the thiophene main body, wherein the substituent group includes one or more of a fluorine atom, a sulfoxide group, and a sulfone group. The energy level of such a material is easily regulated, which facilitates energy level matching with the perovskite absorber layer.
[0018] In some embodiments, the triazine-based material includes a triazine main body and a substituent group attached to the triazine main body, wherein the substituent group includes one or more of a fluorine atom, a sulfoxide group, and a sulfone group. The energy level of the above-mentioned material is easily regulated, which facilitates matching the energy level of the perovskite absorber layer.
[0019] In some embodiments, the pyridine-based material includes a pyridine main body and a substituent group attached to the pyridine main body, wherein the substituent group includes one or more of a fluorine atom, a sulfoxide group, and a sulfone group. The energy level of the above-mentioned material is easily regulated, which facilitates matching the energy level of the perovskite absorber layer.
[0020] In some embodiments, the hexaazatriphenylene material comprises a hexaazatriphenylene main body and a substituent group attached to the hexaazatriphenylene main body, wherein the substituent group comprises one or more of a fluorine atom, a sulfoxide group, and a sulfone group. The energy levels of these materials are easily regulated, which facilitates energy level matching with the perovskite absorber layer.
[0021] In some embodiments, the aromatic substance includes one or more of tetraphenylethylene and pentacene. The energy levels of the above substances are easy to control, which is conducive to matching the energy level of the perovskite absorption layer.
[0022] In some embodiments, the thickness of the first organic layer is 5 nm to 100 nm. When the thickness of the first organic layer is within the above range, the electron transfer efficiency can be further improved.
[0023] In some embodiments, the thickness of the first organic layer is 10 nm to 20 nm. When the thickness of the first organic layer is within the above range, the electron transfer efficiency can be further improved.
[0024] In some embodiments, the polymer comprises an n-type semiconductor conjugated polymer. An n-type semiconductor conjugated polymer is an impurity semiconductor with a free electron concentration far greater than a hole concentration, facilitating electron transport and providing enhanced molecular stability. When used in conjunction with the first organic layer, the polymer can enhance the overall structural stability of the electron transport layer. Furthermore, the polymer in the second organic layer can achieve an effective transition between the first organic layer and the oxide buffer layer.
[0025] In some embodiments, the polymer includes one or more of polyfluorene, a conjugated polymer containing amino functional groups composed of naphthalene diimide and thiophene bridges, a copolymer of polynaphthalene diimide-bithiophene, benzobithiophene-perylene diimide, and [poly(naphthalene dibenzotetramethylene-vinylene)]. These materials facilitate electron transport and have higher molecular stability. When used in conjunction with the first organic layer, they can enhance the overall structural stability of the electron transport layer. Furthermore, the polymer in the second organic layer can effectively transition between the first organic layer and the oxide buffer layer.
[0026] In some embodiments, the thickness of the second organic layer is 10 nm to 200 nm. When the thickness of the second organic layer is within the above range, the electron transfer efficiency can be further improved.
[0027] In some embodiments, the thickness of the second organic layer is 20 nm to 50 nm. When the thickness of the second organic layer is within the above range, the electron transfer efficiency can be further improved.
[0028] In some embodiments, the oxide buffer layer includes one or more of tin oxide, tungsten oxide, niobium oxide, indium oxide, cerium oxide, zirconium oxide, chromium oxide, zinc stannate, barium stannate, and zinc titanate. These oxides possess both the ability to transport electrons and a relatively low valence band top energy level, effectively mitigating hole transport, improving electron transport efficiency, and reducing the risk of carrier recombination. Furthermore, these oxides can mitigate ion migration to a certain extent and reduce the risk of water and oxygen attack on the perovskite absorber layer.
[0029] In some embodiments, the thickness of the oxide buffer layer is 5 nm to 100 nm. When the thickness of the oxide buffer layer is within the above range, the interface characteristics of the photovoltaic device can be further enhanced, thereby improving the photoelectric conversion efficiency of the photovoltaic device.
[0030] In some embodiments, the thickness of the oxide buffer layer is 5 nm to 20 nm. When the thickness of the oxide buffer layer is within the above range, the interface characteristics of the photovoltaic device can be further enhanced, thereby improving the photoelectric conversion efficiency of the photovoltaic device.
[0031] In some embodiments, the photovoltaic device further includes a first passivation layer disposed between the perovskite absorption layer and the electron transport layer. The first passivation layer can passivate the perovskite material, mitigate the risk of ion migration in the perovskite absorption layer to a certain extent, or block the corrosion of the perovskite absorption layer by water and oxygen to a certain extent, thereby improving the stability of the perovskite absorption layer and thus improving the energy conversion efficiency of the photovoltaic device.
[0032] In some embodiments, the first passivation layer includes one or more of an organic halide compound, an inorganic halide compound, an aniline compound, an alkylamine compound, a nitrogen heterocyclic compound, a sulfur heterocyclic compound, and a phosphorus heterocyclic compound. A first passivation layer made of the above materials can effectively passivate the perovskite material.
[0033] In some embodiments, the photovoltaic device further includes a hole transport layer and a second passivation layer. The hole transport layer is disposed on the side of the perovskite absorber layer facing away from the electron transport layer; the second passivation layer is located between the hole transport layer and the perovskite absorber layer. The second passivation layer can passivate the perovskite material, improving the stability of the perovskite absorber layer, thereby increasing the energy conversion efficiency of the photovoltaic device.
[0034] In some embodiments, the second passivation layer includes one or more of an organic halide compound, an inorganic halide compound, an alkylamine compound, a metal oxide semiconductor material, a metal halide, and a carbazole compound. A second passivation layer made of any of the above materials can passivate the perovskite material, improving the stability of the perovskite absorber layer and thereby increasing the energy conversion efficiency of the photovoltaic device.
[0035] In some embodiments, the perovskite absorber layer comprises a perovskite material, wherein the perovskite material comprises one or more compounds having a molecular formula of ABX3 or M2CDN6, wherein A and M each independently comprise Li + 、Na + , K + , Rb + 、Cs + , methylamino, ethylamino, propylamino, butylamino, pentylamino, hexylamino, formamidinium or imidazolyl; B comprises a divalent cation of one or more elements selected from lead, tin, zinc, titanium, antimony, bismuth, nickel, iron, cobalt, silver, copper, gallium, germanium, magnesium, calcium, indium, aluminum, manganese, chromium, molybdenum or europium; X and N each independently comprise F - 、Cl - Br - or I - One or more of; C includes Cs + 、Ag + , K + or Ru + One or more of; D includes Bi 3+ 、Ni 3+ 、Fe 3+ 、Sb 3+ 、 In 3+ or Cu 3+ One or more of .
[0036] In a second aspect, an embodiment of the present application provides a photovoltaic module, comprising a solar cell according to any embodiment of the first aspect of the present application.
[0037] In a third aspect, an embodiment of the present application provides a power generation device, comprising a photovoltaic module according to any embodiment of the second aspect of the present application.
[0038] In a fourth aspect, an embodiment of the present application provides an electrical device comprising a photovoltaic module according to any embodiment of the second aspect of the present application. BRIEF DESCRIPTION OF THE DRAWINGS
[0039] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following is a brief introduction to the drawings required for use in the embodiments of the present application. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on the drawings without creative work.
[0040] FIG1 is a schematic structural diagram of a perovskite solar cell provided in some embodiments of the present application;
[0041] FIG2 is a schematic structural diagram of a perovskite solar cell provided in some other embodiments of the present application;
[0042] FIG3 is a schematic structural diagram of a photovoltaic assembly provided in some embodiments of the present application;
[0043] FIG4 is a schematic structural diagram of an electrical device provided in some embodiments of the present application.
[0044] In the accompanying drawings, the drawings are not necessarily drawn to scale.
[0045] Among them, the reference numerals in the figures are:
[0046] 100. Perovskite solar cells;
[0047] 10. a first electrode;
[0048] 20. Oxide buffer layer;
[0049] 31. First organic layer;
[0050] 32. Second organic layer;
[0051] 40. first passivation layer;
[0052] 50. Perovskite absorber layer;
[0053] 60. Second passivation layer;
[0054] 70. Hole transport layer;
[0055] 80. a second electrode;
[0056] 1. Photovoltaic modules;
[0057] 2. Electrical equipment. DETAILED DESCRIPTION
[0058] Below, the embodiments of the photovoltaic devices, photovoltaic modules, power generation devices, and power consumption devices of the present application are described in detail with appropriate reference to the accompanying drawings. However, unnecessary detailed descriptions may be omitted. For example, detailed descriptions of well-known matters and repeated descriptions of actually identical structures may be omitted. This is to avoid the following description from becoming unnecessarily lengthy and to facilitate understanding by those skilled in the art. In addition, the drawings and the following description are provided to enable those skilled in the art to fully understand the present application and are not intended to limit the subject matter described in the claims.
[0059] " range " disclosed in the present application is limited in the form of lower limit and upper limit, and given range is limited by selecting a lower limit and an upper limit, and the selected lower limit and upper limit define the boundary of special range. The scope limited in this way can be to include end value or not include end value, and can be arbitrarily combined, that is, any lower limit can form a range with any upper limit combination. For example, if the scope of 60-120 and 80-110 is listed for specific parameters, it is understood that the scope of 60-110 and 80-120 is also expected. In addition, if the minimum range value 1 and 2 are listed, and if the maximum range value 3,4 and 5 are listed, then the following range can all be expected: 1-3, 1-4, 1-5, 2-3, 2-4 and 2-5. In this application, unless otherwise specified, the numerical range " ab " represents the abbreviation of any real number combination between a and b, wherein a and b are all real numbers. For example, a numerical range of "0-5" indicates that all real numbers between "0-5" are listed herein, and "0-5" is simply an abbreviation for these numerical combinations. Furthermore, when a parameter is expressed as an integer ≥ 2, this is equivalent to disclosing that the parameter is, for example, an integer of 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, etc.
[0060] Unless otherwise specified, all embodiments and optional embodiments of the present application can be combined with each other to form a new technical solution.
[0061] Unless otherwise specified, all technical features and optional technical features of this application can be combined with each other to form a new technical solution.
[0062] Unless otherwise specified, all steps of the present application may be performed sequentially or randomly, preferably sequentially. For example, a method includes steps (a) and (b), which indicates that the method may include steps (a) and (b) performed sequentially, or may include steps (b) and (a) performed sequentially. For example, a method may further include step (c), which indicates that step (c) may be added to the method in any order, for example, the method may include steps (a), (b), and (c), or may include steps (a), (c), and (b), or may include steps (c), (a), and (b), etc.
[0063] The term "hydrogen" refers to 1H (protium, H), 2H (deuterium, D), or 3H (tritium, T). In various embodiments, "hydrogen" may be 1H (protium, H).
[0064] As further examples, the integers in the range of 5 to 40 are specifically contemplated as individually disclosing 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, and 40; the integers in the range of 1-20 are specifically contemplated as individually disclosing 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, and 20. Additional groups or ranges are expressly contemplated accordingly.
[0065] Photovoltaic devices consist of a perovskite absorber layer, a hole transport layer, an electron transport layer, and electrodes. The energy level of the perovskite absorber layer must match that of the electrode. Electrons generated by light excitation in the perovskite absorber layer are then transported to the electrodes.
[0066] However, in related technologies, the energy level matching between the perovskite absorption layer and the electrode is low, the device stability is poor, and the energy conversion efficiency is poor.
[0067] In view of the above problems, the present application proposes a photovoltaic device, which can improve the interface matching and device stability of the photovoltaic device by setting an electron transport layer and an oxide buffer layer; wherein, the electron transport layer is a multi-layer composite structure, one layer of which is a first organic layer containing small molecule organic matter, and the other layer is a second organic layer containing large molecule organic matter. The first organic layer can effectively transport electrons to the first electrode, the second organic layer can improve the overall structural stability of the electron transport layer, and the second organic layer can realize an effective transition between the first organic layer and the oxide buffer layer, so that the oxide buffer layer can further improve the electron transmission efficiency, thereby improving the energy conversion efficiency of the photovoltaic device.
[0068] Photovoltaic devices
[0069] In a first aspect, an embodiment of the present application proposes a photovoltaic device, which includes a perovskite absorption layer, an electron transport layer, an oxide buffer layer, and a first electrode; the electron transport layer is arranged between the perovskite absorption layer and the first electrode, and the electron transport layer includes a first organic layer and a second organic layer, the first organic layer is arranged on the perovskite absorption layer, and the second organic layer is arranged on the side of the first organic layer away from the perovskite absorption layer, the first organic layer includes a first organic matter, and the first organic matter is a non-polymer, and the second organic layer includes a second organic matter, and the second organic matter is a polymer; the oxide buffer layer is arranged between the second organic layer and the first electrode.
[0070] The photovoltaic device of the embodiment of the present application is provided with an electron transport layer and a buffer layer between the perovskite absorption layer and the first electrode, which can improve the energy level matching between the perovskite absorption layer and the first electrode, and improve the photoelectric conversion efficiency of the photovoltaic device. Specifically, the electron transport layer includes a first organic layer and a second organic layer, and the non-polymer in the first organic layer has good film-forming properties on the surface of the perovskite absorption layer, which can effectively passivate the defects of the perovskite absorption layer and is conducive to the film formation of the second organic layer; the polymer in the second organic layer has high stability itself, which can improve the overall structural stability of the electron transport layer, and the polymer in the second organic layer has excellent conductivity, which is conducive to electron transport and electron transfer of the electron transport layer; the oxide buffer layer is located between the second organic layer and the first electrode, and the second organic layer can achieve an effective transition of energy levels between the first organic layer and the oxide buffer layer, and can achieve effective bonding between the first organic layer and the oxide buffer layer, improve device stability, and the oxide buffer layer can further improve the carrier transmission efficiency and device stability, thereby further improving the energy conversion efficiency of the photovoltaic device.
[0071] Perovskite absorber layer
[0072] After the perovskite material in the perovskite absorption layer absorbs photons, electron-hole pairs are generated, which are thermalized to form excitons. Then, charge separation occurs, and the photogenerated electrons jump to the LUMO energy level of the perovskite absorption layer, and the photogenerated holes jump to the HOMO energy level of the perovskite absorption layer.
[0073] [Perovskite materials]
[0074] Perovskite materials refer to compounds with a perovskite structure. Perovskite materials include one or more compounds with the molecular formula ABX3 or M2CDN6, where A, B, M, C, and D are cations and X and N are anions.
[0075] Taking ABX3 as an example, in an ideal cubic crystal structure, the B cation has a 6-fold coordination and is surrounded by an anion octahedron, while the A cation has a 12-fold cubo-octahedral coordination. The cubic unit cell of this compound consists of the A cations at the corners, the B at the body center, and the X anion occupying the face center.
[0076] In some embodiments, A and M each independently comprise Li + 、Na + , K + , Rb + 、Cs + , methylamino, ethylamino, propylamino, butylamino, pentylamino, hexylamino, formamidinyl or imidazolyl.
[0077] In some embodiments, B comprises a divalent cation of one or more of lead, tin, zinc, titanium, antimony, bismuth, nickel, iron, cobalt, silver, copper, gallium, germanium, magnesium, calcium, indium, aluminum, manganese, chromium, molybdenum, or europium.
[0078] In some embodiments, X and N each independently comprise F - 、Cl - Br - or I - One or more of .
[0079] In some embodiments, C comprises Cs + 、Ag + , K + or Ru + One or more of .
[0080] In some embodiments, D comprises Bi 3+ 、Ni 3+ 、Fe 3+ 、Sb 3+ 、In 3+ or Cu 3+ One or more of .
[0081] For example, perovskite materials include CH8I3N2Pb(FAPbI3), Cs 0.05 (FA 0.83 MA 0.17 ) 0.95 Pb(I 0.83 Br 0.17 )3, CsPbBr3, CsPbI3, one or more, FA represents a formamidinium cation ((NH2)2CH + ).
[0082] In some embodiments, the thickness of the perovskite absorber layer is between 200 nm and 1000 nm, for example, 200 nm, 250 nm, 300 nm, 400 nm, 500 nm, 600 nm, 700 nm, 800 nm, 900 nm, 1000 nm, or a range consisting of any two of these values. When the thickness of the perovskite absorber layer is within the above range, the photoelectric conversion function of the perovskite absorber layer can be effectively exerted, thereby improving the energy conversion efficiency of the photovoltaic device.
[0083] The above compounds can be purchased commercially or synthesized using conventional methods in the art.
[0084] electron transport layer
[0085] As a transport layer, the electron transport layer can effectively transport electrons, reduce carrier recombination at the interface between the perovskite absorption layer and the electron transport layer, and improve the energy conversion efficiency of the photovoltaic device.
[0086] In an embodiment of the present application, the electron transport layer includes a first organic layer and a second organic layer. The first organic layer and the second organic layer both include materials capable of extracting and transporting electron carriers, and the conduction band bottom energy levels of the first organic layer and the second organic layer decrease in a step-like manner. For example, the conduction band bottom energy level of the first organic layer is greater than the conduction band bottom energy level of the second organic layer, so as to facilitate electron transmission from the perovskite absorption layer through the first organic layer and the second organic layer to the first electrode.
[0087] In some embodiments, the first organic layer includes a first organic material. The first organic material is a non-polymer with a monomolecular structure. The non-polymer exhibits excellent film-forming properties, effectively passivating defects in the perovskite absorber layer and significantly improving device efficiency. However, the non-polymer itself has poor stability. Therefore, its combination with the polymer in the second organic layer can effectively improve the overall structural stability of the electron transport layer.
[0088] The first organic substance may be a non-fullerene organic molecule acceptor; of course, other substances, such as fullerene organic molecule acceptors, may also be selected. In embodiments of the present application, the first organic substance may be a non-fullerene organic small molecule acceptor, such as a non-polymeric non-fullerene organic acceptor. Such substances have easily controllable energy levels, facilitating energy level matching with the perovskite absorber layer. For example, non-polymeric substances include one or more of imide-based substances, heterocyclic substances, and aromatic ring-based substances.
[0089] For example, the imide material may be an aromatic imide material, such as one or more of perylene diimide (PDI), naphthalene diimide (NDI), and acenaphthenequinone dicarboximide (ANQNI). These compounds have high electron affinity and can effectively extract and transport electrons in the perovskite absorption layer.
[0090] In some embodiments, the heterocyclic substance includes one or more of pyrrolidones, hexaazanaphthalenes, quinolines, thiophenes, triazines, pyridines, and hexaazatriphenylenes. These compounds have strong electron-deficient properties and can effectively extract and transport electrons from the perovskite absorption layer.
[0091] For example, the pyrrolidone-based substances include one or more of naphthodipyrrolidone (NDP) and dipyrrolopyrrole (DPP). These compounds have strong electron-deficient properties and can effectively extract and transport electrons in the perovskite absorption layer.
[0092] Illustratively, the hexaazanaphthalene-type substance includes a hexaazanaphthalene main body and a substituent group connected to the hexaazanaphthalene main body, and the substituent group includes one or more groups selected from fluorine atoms, sulfoxide groups and sulfone groups; specifically, the hexaazanaphthalene-type substance can be a hexaazanaphthalene (HATN) derivative, for example, one or more groups selected from fluorine atoms, sulfoxide groups or sulfone groups are introduced into the hexaazanaphthalene, and of course the substituent group can also be other substituents.
[0093] Illustratively, the quinoline substance includes a quinoline main body and a substituent group connected to the quinoline main body, and the substituent group includes one or more groups selected from fluorine atoms, sulfoxide groups and sulfone groups. Of course, the substituent group may also be other substituents.
[0094] Illustratively, the thiophene-based substance includes a thiophene main body and a substituent group connected to the thiophene main body, and the substituent group includes one or more groups selected from fluorine atoms, sulfoxide groups, and sulfone groups. Of course, the substituent group may also be other substituents.
[0095] Illustratively, the triazine-based substance comprises a triazine main body and a substituent group attached to the triazine main body, wherein the substituent group comprises one or more of a fluorine atom, a sulfoxide group, and a sulfone group, although other substituents may also be present. Illustratively, the pyridine-based substance comprises a pyridine main body and a substituent group attached to the pyridine main body, wherein the substituent group comprises one or more of a fluorine atom, a sulfoxide group, and a sulfone group, although other substituents may also be present.
[0096] Illustratively, the hexaazatriphenylene substance includes a hexaazatriphenylene main body and a substituent group connected to the hexaazatriphenylene main body, and the substituent group includes one or more groups selected from the group consisting of a fluorine atom, a sulfoxide group, and a sulfone group.
[0097] In some embodiments, the aromatic substance includes one or more of tetraphenylethylene and pentacene substances.
[0098] Illustratively, the pentacene-based substance includes a pentacene main body and a substituent connected to the pentacene main body. The substituent may include an electron-withdrawing group such as a cyano group, and the substituent may also include a group such as a silane group.
[0099] The above substances can be purchased directly or prepared using conventional methods and equipment in the art.
[0100] In some embodiments, the first organic layer has a thickness of 5 nm to 100 nm, for example, 5 nm, 10 nm, 15 nm, 20 nm, 25 nm, 30 nm, 35 nm, 40 nm, 45 nm, 50 nm, 55 nm, 60 nm, 65 nm, 70 nm, 75 nm, 80 nm, 85 nm, 90 nm, 95 nm, 100 nm, or a range consisting of any two of these values. When the thickness of the first organic layer is within the above range, the electron transport efficiency can be further improved.
[0101] In some embodiments, the second organic layer includes a second organic matter, which is a polymer. The polymer has high molecular stability and good conductivity. When used in conjunction with the first organic layer, it can improve the overall structural stability of the electron transport layer; and the polymer in the second organic layer can achieve an effective transition of energy levels between the first organic layer and the oxide buffer layer.
[0102] The second organic compound may be an n-type semiconductor conjugated polymer. Of course, the second organic compound may be other polymers capable of electron transport. An n-type semiconductor conjugated polymer is an impurity semiconductor in which the free electron concentration is much greater than the hole concentration, which is conducive to electron transport and has higher molecular stability. For example, the second organic compound includes one or more of polyfluorene, a conjugated polymer containing amino functional groups composed of naphthalene diimide and a thiophene bridge bond, PFN-2TNDI, polynaphthalene diimide-bithiophene PNDI-2T, a copolymer of benzobisthiophene-perylene diimide PBDT-PDI, [poly(naphthalene dibenzotetramethylene-vinylene)] NDP-V, and the like.
[0103] In some embodiments, the second organic layer has a thickness of 10 nm to 200 nm, for example, 10 nm, 15 nm, 20 nm, 25 nm, 30 nm, 35 nm, 40 nm, 45 nm, 50 nm, 55 nm, 60 nm, 65 nm, 70 nm, 75 nm, 80 nm, 85 nm, 90 nm, 95 nm, 100 nm, 110 nm, 120 nm, 130 nm, 140 nm, 150 nm, 160 nm, 170 nm, 180 nm, 190 nm, 200 nm, or a range consisting of any two of these values. When the thickness of the second organic layer is within the above range, the electron transport efficiency can be further improved.
[0104] Oxide buffer layer
[0105] In some embodiments, the oxide buffer layer includes an oxide, particularly an n-type semiconductor oxide. The oxide buffer layer and the organic electron transport layer are used together to enhance the interface characteristics of the photovoltaic device and improve the photoelectric conversion efficiency of the photovoltaic device.
[0106] For example, the n-type semiconductor oxide may include tin oxide SnO x One or more of the following: tungsten oxide (WO3), niobium oxide (Nb2O5), indium oxide (In2O3), cerium oxide (CeO2), zirconium oxide (ZrO2), chromium oxide (Cr2O3), zinc stannate (Zn2SnO4), barium stannate (BaSnO3), and zinc titanate (ZnTiO3). These oxides possess both the ability to transport electrons and a low valence band top energy level, effectively mitigating hole transport. Furthermore, these oxides can mitigate ion migration to a certain extent and reduce the risk of water and oxygen erosion of the perovskite absorber layer.
[0107] In some embodiments, the oxide buffer layer has a thickness of 5 nm to 100 nm, for example, 5 nm, 10 nm, 15 nm, 20 nm, 25 nm, 30 nm, 35 nm, 40 nm, 45 nm, 50 nm, 55 nm, 60 nm, 65 nm, 70 nm, 75 nm, 80 nm, 85 nm, 90 nm, 95 nm, 100 nm, or a range consisting of any two of these values. When the oxide buffer layer has a thickness within the above range, it can further enhance the interfacial properties of the photovoltaic device and improve the photoelectric conversion efficiency of the photovoltaic device.
[0108] First passivation layer
[0109] In some embodiments, the photovoltaic device further includes a first passivation layer disposed between the perovskite absorption layer and the electron transport layer.
[0110] The passivation material in the first passivation layer may include one or more of an organic halide compound, an inorganic halide compound, an aniline compound, an alkylamine compound, a nitrogen heterocyclic compound, a sulfur heterocyclic compound, and a phosphorus heterocyclic compound. The above-mentioned compound may be a single molecule (non-polymer) or a polymer, and a polymer may be selected. The above-mentioned material, especially the polymer, has a more excellent passivation effect on the perovskite material; it can also alleviate the risk of ion migration in the perovskite absorber layer to a certain extent, or can block the corrosion of the perovskite absorber layer by water and oxygen to a certain extent, thereby improving the stability of the perovskite absorber layer and thus improving the energy conversion efficiency of the photovoltaic device.
[0111] Illustratively, the organic halide salt compound includes one or more of polyacrylonitrile (PAN) and phenethylammonium iodide (PEAI).
[0112] Illustratively, the inorganic halide compound includes an alkali metal halide, a halide of a Group II element, or a halide of a Group III element, such as one or more of sodium chloride, potassium chloride, magnesium chloride, calcium chloride, barium chloride, aluminum chloride, sodium fluoride, potassium fluoride, magnesium fluoride, calcium fluoride, barium fluoride, aluminum fluoride, sodium bromide, potassium bromide, magnesium bromide, calcium bromide, barium bromide, and aluminum bromide. The metal ions in the above compounds can be distributed at the grain boundaries or within the crystals to achieve passivation through ionic bonding or alloying.
[0113] Illustratively, the aniline compound includes one or more of polyaniline and phenylethylamine.
[0114] For example, the alkylamine compound includes one or more of 2,2'-(ethylenedioxy)diethylamine (EDEA) and hexamethylenediamine (HMDA). These compounds can interact with defects, thereby regulating the defect passivation effect.
[0115] Illustratively, the nitrogen heterocyclic compound includes one or more of benzodiazepines, dibenzodiazepines, and azepane.
[0116] Illustratively, the sulfur heterocyclic compound includes one or more of polyphenylene sulfide and thiophene.
[0117] Illustratively, the phosphorus heterocyclic compound includes one or more of phosphacyclopentadiene and phosphabenzene.
[0118] In some embodiments, the first passivation layer has a thickness of 2 nm to 10 nm, for example, 2 nm, 3 nm, 4 nm, 5 nm, 6 nm, 7 nm, 8 nm, 9 nm, 10 nm, or a range consisting of any two of the foregoing values. When the thickness of the first passivation layer is within the foregoing range, the stability of the perovskite absorber layer can be improved, thereby improving the energy conversion efficiency of the photovoltaic device.
[0119] hole transport layer
[0120] In some embodiments, the photovoltaic device further comprises a hole transport layer, which is disposed on the other side of the perovskite absorption layer and on the side of the perovskite absorption layer facing away from the electron transport layer.
[0121] As a transport layer, the hole transport layer can effectively transport holes, reduce carrier recombination at the interface between the perovskite absorption layer and the hole transport layer, and improve the energy conversion efficiency of perovskite solar cells.
[0122] The hole transport layer includes a hole transport material, which is one or more of the following materials and their derivatives and materials obtained by doping or passivation: poly [bis (4-phenyl) (2,4,6-trimethylphenyl) amine] (PTAA), poly (3,4-ethylenedioxythiophene) -polystyrene sulfonic acid (PEDOT: PSS), 2,2',7,7'-tetrakis [N,N-bis (4-methoxyphenyl) amino] -9,9'-spiro dipolyfluorene (Spiro-OMeTAD ), poly-3 hexylthiophene (P3HT), methoxytriphenylamine-fluoroformamidine, triphenylamine with triptycene as the core, 3,4-ethylenedioxythiophene-methoxytriphenylamine, N-(4-phenylamino)carbazole-spirobispolyfluorene, polythiophene, phosphonic acid-based monomers, carboxylic acid-based monomers, carbazole-based monomers, sulfonic acid-based monomers, triphenylamine-based monomers, aromatic monomers, metal oxides and cuprous thiocyanate, wherein the metal elements in the metal oxides include one or more of Ni, Mo and Cu.
[0123] Second passivation layer
[0124] In some embodiments, the photovoltaic device further includes a second passivation layer disposed between the perovskite absorption layer and the hole transport layer.
[0125] The passivation material in the second passivation layer includes one or more of the following: organic halide compounds, inorganic halide compounds, alkylamine compounds, metal oxide semiconductor materials, metal halides, and carbazole compounds. These compounds can be single molecules or polymers, with polymers being preferred. These materials, especially polymers, have a superior passivation effect on perovskite materials, improving the stability of the perovskite absorber layer and thereby increasing the energy conversion efficiency of photovoltaic devices.
[0126] Illustratively, the organic halide salt compound includes one or more of octylammonium bromide and phenethylammonium iodide.
[0127] Illustratively, the inorganic halide compound includes an alkali metal halide, a halide of a Group II element, or a halide of a Group III element, such as one or more of sodium chloride, potassium chloride, magnesium chloride, calcium chloride, barium chloride, aluminum chloride, sodium fluoride, potassium fluoride, magnesium fluoride, calcium fluoride, barium fluoride, aluminum fluoride, sodium bromide, potassium bromide, magnesium bromide, calcium bromide, barium bromide, and aluminum bromide. The metal ions in the above compounds can be distributed at the grain boundaries or within the crystals to achieve passivation through ionic bonding or alloying.
[0128] For example, the alkylamine compound includes one or more of 2,2'-(ethylenedioxy)diethylamine (EDEA) and hexamethylenediamine (HMDA). These compounds can interact with defects, thereby regulating the defect passivation effect.
[0129] Illustratively, the metal oxide semiconductor material includes one or more of aluminum oxide and nickel oxide.
[0130] Illustratively, the metal halide includes one or more of copper iodide and cesium fluoride.
[0131] For example, the carbazole compound may include one or more of polycarbazole phosphate (Poly-4PACz) and 2-(9H-carbazol-9-yl)ethyl]phosphonic acid (2PACz).
[0132] In some embodiments, the second passivation layer has a thickness of 2 nm to 10 nm, for example, 2 nm, 3 nm, 4 nm, 5 nm, 6 nm, 7 nm, 8 nm, 9 nm, 10 nm, or a range consisting of any two of the foregoing values. When the second passivation layer has a thickness within the foregoing range, it can improve the stability of the perovskite absorber layer, thereby improving the energy conversion efficiency of the photovoltaic device.
[0133] First electrode
[0134] The electrode material in the first electrode includes an organic, inorganic, or organic-inorganic hybrid conductive material. The organic conductive material includes a conductive polymer (one or more of poly (3,4-ethylenedioxythiophene) PEDOT, polythiophene, polyacetylene, etc.); the inorganic conductive material includes one or more of a transparent conductive oxide (FTO, ITO, AZO, BZO, IZO), a metal, a carbon derivative, etc., wherein the metal includes but is not limited to the following materials: one or more of Ag, Cu, C, Au, Al.
[0135] Second electrode
[0136] In some embodiments, the photovoltaic device further includes a second electrode, the second electrode being located on a side of the hole transport layer facing away from the second passivation layer.
[0137] The electrode material in the second electrode includes an organic, inorganic, or organic-inorganic hybrid conductive material. The organic conductive material includes a conductive polymer (one or more of poly (3,4-ethylenedioxythiophene) PEDOT, polythiophene, polyacetylene, etc.); the inorganic conductive material includes one or more of a transparent conductive oxide (FTO, ITO, AZO, BZO, IZO), a metal, a carbon derivative, etc., wherein the metal includes but is not limited to the following materials: one or more of Ag, Cu, C, Au, Al.
[0138] The photovoltaic device according to the embodiment of the present application is a cell based on the photovoltaic effect, such as a solar cell, which can efficiently convert solar energy into electrical energy.
[0139] In some embodiments, the photovoltaic device may be a single junction solar cell such as a perovskite solar cell.
[0140] In other embodiments, the photovoltaic device may be a tandem solar cell. By connecting a wide bandgap cell and a narrow bandgap cell in series, the tandem solar cell can more rationally utilize photons in the full spectrum and reduce energy loss. Specifically, the tandem solar cell includes a bottom cell and a top cell, the bandgap of the bottom cell is relatively narrow, and the bandgap of the top cell is relatively wide. The tandem solar cell may include any one of a crystalline silicon perovskite tandem solar cell or a full perovskite solar cell. The crystalline silicon perovskite tandem solar cell includes a silicon cell and a perovskite solar cell. Exemplarily, the crystalline silicon perovskite tandem solar cell may include a crystalline silicon bottom cell, a composite layer, and a perovskite top cell stacked in sequence, wherein the bandgap of the silicon cell is relatively narrow, and the bandgap of the perovskite solar cell is relatively wide. The perovskite solar cell may be used as the perovskite top cell in the crystalline silicon perovskite tandem solar cell. The full perovskite solar cell includes multiple perovskite solar cells, which serve as bottom cells and top cells respectively, and the band gaps of the bottom cells and the top cells are different. Exemplarily, the above-mentioned full perovskite solar cell may include a first perovskite solar cell, a composite layer and a second perovskite solar cell stacked in sequence.
[0141] In the embodiment of the present application, the perovskite solar cell in the single-junction solar cell and the stacked solar cell both include the above structure, which can effectively improve the energy conversion efficiency of the photovoltaic device.
[0142] Perovskite solar cells can be in either a normal (nip) or inverted (pin) configuration.
[0143] As shown in Figure 1 , a perovskite solar cell 100 includes a first electrode 10, an oxide buffer layer 20, a second organic layer 32, a first organic layer 31, a first passivation layer 40, a perovskite absorber layer 50, a second passivation layer 60, a hole transport layer 70, and a second electrode 80, which are stacked sequentially along the thickness direction of the perovskite solar cell. The perovskite solar cell 100 shown in Figure 1 is a formal structure perovskite solar cell; the arrows in Figure 1 indicate the direction of incident light.
[0144] As shown in FIG2 , a perovskite solar cell 100 includes a second electrode 80, a hole transport layer 70, a second passivation layer 60, a perovskite absorption layer 50, a first passivation layer 40, a first organic layer 31, a second organic layer 32, an oxide buffer layer 20, and a first electrode 10, which are sequentially stacked along the thickness direction of the perovskite solar cell. The perovskite solar cell 100 shown in FIG2 is an inverted structure perovskite solar cell; the arrows in FIG2 indicate the direction of incident light.
[0145] In the embodiment of the present application, the types of each substance in each film layer of the photovoltaic device are well-known in the art, and can be qualitatively and quantitatively detected using equipment and methods well-known in the art, such as liquid chromatography and mass spectrometry. Taking the perovskite absorption layer as an example, specifically, the perovskite solar cell is disassembled to obtain the perovskite absorption layer, which is dissolved in an organic solvent (a mixed solvent of N,N-dimethylformamide DMF and dimethyl sulfoxide DMSO with a volume ratio of 4:1) as a test sample, and the sample is placed in a liquid chromatography-mass spectrometer for quantitative and qualitative detection of the compound. The content of each substance in the perovskite absorption layer can also be measured by X-ray photoelectron spectroscopy XPS, energy dispersant EDS, etc. to measure the proportion of unique elements in each substance, thereby calculating the content of each substance.
[0146] Photovoltaic panels
[0147] In a second aspect, an embodiment of the present application further provides a photovoltaic assembly, comprising the photovoltaic device of any embodiment of the first aspect of the present application.
[0148] In some embodiments, a photovoltaic module may include at least one photovoltaic device. For example, the photovoltaic module may include one perovskite solar cell, or may include multiple perovskite solar cells. In the case where the photovoltaic module includes multiple perovskite solar cells, the multiple perovskite solar cells can be connected in series, in parallel, or in a hybrid manner. Hybrid means that the multiple perovskite solar cells are divided into multiple groups of cells, each group of cells is connected in series, and then two adjacent groups of cells are connected in parallel; or each group of cells is connected in parallel, and then two adjacent groups of cells are connected in series. As shown in Figure 3, the photovoltaic module 1 includes at least one perovskite solar cell 100.
[0149] Power generation device
[0150] On the third aspect, the embodiments of the present application also provide a power generation device, including a photovoltaic module of any embodiment of the second aspect of the present application. The use of the above-mentioned photovoltaic module can ensure the transparency of the power generation device and enable the power generation device to have a higher energy conversion efficiency, and can be used in application scenarios that require both transparency and conductivity.
[0151] Electrical devices
[0152] In a fourth aspect, an embodiment of the present application further provides an electrical device comprising a photovoltaic assembly according to any embodiment of the second aspect of the present application.
[0153] Photovoltaic modules can be used as power sources for electrical devices or as energy storage units. These devices include, but are not limited to, mobile devices (e.g., mobile phones, laptops), electric vehicles (e.g., pure electric vehicles, hybrid electric vehicles, plug-in hybrid electric vehicles, electric bicycles, electric scooters, electric golf carts, electric trucks), electric trains, ships, satellites, and energy storage systems.
[0154] 4 is a schematic diagram of an exemplary electric device 2. The electric device 2 is a pure electric vehicle, a hybrid electric vehicle, or a plug-in hybrid electric vehicle, etc. The electric device 2 includes a photovoltaic module 1.
[0155] As another example, the electric device may be a mobile phone, a tablet computer, a laptop computer, etc.
[0156] Example
[0157] The following examples describe the present disclosure in more detail and are intended to be illustrative only, as various modifications and variations within the scope of the present disclosure will be apparent to those skilled in the art. Unless otherwise indicated, all parts, percentages, and ratios reported in the following examples are by weight, and all reagents used in the examples are commercially available or synthesized according to conventional methods and used directly without further processing, and all instruments used in the examples are commercially available.
[0158] Example 1
[0159] Preparation of perovskite solar cells
[0160] (1) FTO conductive glass cleaning
[0161] A 2.0 cm×2.0 cm FTO conductive glass was ultrasonically cleaned with acetone, isopropyl alcohol, and deionized water for 30 minutes, respectively, and finally dried with nitrogen gas for later use. The glass was then placed in an ultraviolet ozone machine for further cleaning to serve as the second electrode.
[0162] (2) Nickel oxide NiO x Preparation of hole transport layer
[0163] NiO was deposited by magnetron sputtering x preparing hole transport layer materials;
[0164] The above-mentioned FTO conductive glass was placed in a vacuum chamber, and a NiOx film with a thickness of 15 nm was prepared as a hole transport layer.
[0165] (3) Preparation of the second passivation layer
[0166] A 1 mg / mL dimethylmethanol IPA solution of poly-4PACz was spin-coated on the surface of the hole transport layer at a speed of 5000 rpm, and then moved to a constant temperature hot stage, heated at 100°C for 10 minutes, and cooled to room temperature to obtain a second passivation layer.
[0167] (4) Preparation of perovskite absorber layer
[0168] A 1.5 mol / L mixed N,N-dimethylacetamide (DMF) solution of CH8I3N2Pb (FAPbI3) was spin-coated on the surface of the second passivation layer at a speed of 4000 rpm, and then moved to a constant temperature hot stage and heated at 100°C for 30 minutes. After cooling to room temperature, a perovskite absorption layer with a thickness of 500 nm was formed.
[0169] (5) Preparation of the first passivation layer
[0170] A 5 mg / mL polyacrylonitrile (PAN) in IPA solution was spin-coated on the perovskite absorber layer at a speed of 5000 rpm, and then moved to a constant temperature hot stage, heated at 100°C for 10 minutes, and cooled to room temperature to obtain the first passivation layer.
[0171] (6) Preparation of electron transport layer
[0172] First organic layer: Spin coat a 10 mg / mL perylene diimide (PDI) solution in isopropyl alcohol (IPA) on the first passivation layer at 3000 rpm. Then, transfer the coating to a thermostatic hot plate, heat at 100°C for 10 min, and cool to room temperature to obtain the first organic layer.
[0173] Second organic layer: Spin coat a 20 mg / mL isopropyl alcohol / IPA solution of PFN-2TNDI, a conjugated polymer containing amino functional groups composed of naphthalene diimide and thiophene bridges, on the first organic layer at 3000 rpm. Then, transfer the solution to a constant temperature hot plate, heat at 100°C for 10 minutes, and cool to room temperature to obtain the second organic layer.
[0174] (7) Preparation of oxide buffer layer
[0175] A tin oxide layer was deposited on the surface of the sample using an atomic layer deposition method.
[0176] (8) Preparation of the first electrode
[0177] Transfer the above devices to the vacuum coating machine to The 80nm copper electrode was evaporated at a speed of 100 nm to complete the preparation of the perovskite solar cell.
[0178] Example 2 and Example 3
[0179] A perovskite solar cell was prepared using a method similar to that of Example 1, except that the material of the first organic layer was adjusted.
[0180] Example 4 and Example 5
[0181] A perovskite solar cell was prepared using a method similar to that of Example 1, except that the thickness of the first organic layer was adjusted.
[0182] Example 6 and Example 7
[0183] A perovskite solar cell was prepared using a method similar to that of Example 1, except that the material of the second organic layer was adjusted.
[0184] Example 8 and Example 9
[0185] A perovskite solar cell was prepared using a method similar to that of Example 1, except that the thickness of the second organic layer was adjusted.
[0186] Example 10 and Example 11
[0187] A perovskite solar cell was prepared using a method similar to that of Example 1, except that the material of the oxide buffer layer was adjusted.
[0188] Example 12 and Example 13
[0189] A perovskite solar cell was prepared using a method similar to that of Example 1, except that the thickness of the oxide buffer layer was adjusted.
[0190] Example 14
[0191] A perovskite solar cell was prepared using a method similar to that of Example 1, except that the material of the first passivation layer was adjusted.
[0192] Example 15
[0193] A perovskite solar cell was prepared using a method similar to that of Example 1, except that the material of the second passivation layer was adjusted.
[0194] Example 16
[0195] A perovskite solar cell was prepared using a method similar to that of Example 1, except that no first passivation layer was provided.
[0196] Example 17
[0197] A perovskite solar cell was prepared using a method similar to that of Example 1, except that no second passivation layer was provided.
[0198] Comparative Example 1
[0199] A perovskite solar cell was prepared by a method similar to that in Example 1. The difference from Example 1 was that the electron transport layer was a 2alpha-phenyl-1,2(2alpha)-homo[5,6]fullerene-C60-lh-2alpha-butyric acid methyl ester (PC60BM) electron transport layer.
[0200] Comparative Example 2
[0201] A perovskite solar cell was prepared using a method similar to that of Example 1. The difference from Example 1 was that the electron transport layer only included the first organic layer, and no second organic layer was provided.
[0202] Comparative Example 3
[0203] A perovskite solar cell was prepared using a method similar to that of Example 1. The difference from Example 1 was that the buffer layer was an organic buffer layer comprising a block copolymer BCP.
[0204] The parameters of the embodiments and comparative examples are shown in Table 1.
[0205] Performance testing:
[0206] The perovskite solar cells prepared in the above embodiments and comparative examples were placed in an atmospheric environment. The AM1.5G standard light source was used as the sunlight simulation light source. A four-channel digital source meter (Keithley2440) was used to measure the volt-ampere characteristic curve of the battery under the light source to obtain the open circuit voltage Voc, short circuit current density Jsc, and fill factor FF (Fill Factor) of the battery, thereby calculating the energy conversion efficiency Eff (Efficiency) of the battery.
[0207] The energy conversion efficiency is calculated as follows:
[0208] Eff=Pout / Pin×100%,where Pout and Pin are the battery output power and incident light power respectively. The incident light power is 100mW / cm 2 .
[0209] Test results
[0210] The test results are shown in Table 1.
[0211] Table 1
[0212] In Table 1, “ / ” indicates that the layer does not exist.
[0213] PDI stands for perylene diimide;
[0214] DPP stands for diketopyrrolopyrrole;
[0215] PFN-2TNDI represents a conjugated polymer containing amino functional groups composed of naphthalene diimide and thiophene bridge bonds;
[0216] PBDT-PDI represents a copolymer of benzobisthiophene and perylene diimide;
[0217] NDP-V stands for [poly(naphthalene dibenzotetramethylene-vinylene)];
[0218] PAN stands for polyaniline;
[0219] PEAI stands for phenylethylammonium iodide;
[0220] Poly-4PACz indicates polycarbazole phosphate;
[0221] 2PACz represents 2-(9H-carbazol-9-yl)ethyl]phosphonic acid.
[0222] The thickness of the first passivation layer in both the embodiment and the comparative example is 10 nm, and the thickness of the second passivation layer in both the embodiment and the comparative example is 3 nm.
[0223] As can be seen from Table 1,
[0224] Comparative Example 1 uses a single layer of PC60BM as an organic electron transport layer in combination with an oxide buffer layer, resulting in poor electron transport efficiency, which results in low energy conversion efficiency of the photovoltaic device.
[0225] Comparative Example 2 uses a single layer of PDI as an organic electron transport layer in combination with an oxide buffer layer, resulting in poor electron transport efficiency, which results in low energy conversion efficiency of the photovoltaic device.
[0226] Comparative Example 3 uses a double-layer organic electron transport layer and a polymer buffer layer in combination. The interface matching between the polymer buffer layer and the metal electrode is poor, resulting in low energy conversion efficiency of the photovoltaic device.
[0227] The embodiment of the present application uses a double-layer electron transport layer and an oxide buffer layer in combination, which can effectively improve the interface matching and enhance the carrier transport capability, thereby improving the energy conversion efficiency of the photovoltaic device.
[0228] Examples 1 to 9 of the present application can further control the energy conversion efficiency of the photovoltaic device by regulating the material and thickness of the electron transport layer. Examples 10 to 13 can further control the energy conversion efficiency of the photovoltaic device by regulating the material and thickness of the oxide buffer layer. Examples 14 to 17 can further control the energy conversion efficiency of the photovoltaic device by regulating the material and thickness of the passivation layer.
[0229] Moreover, a passivation layer is further provided in the photovoltaic device. For example, in Example 16 and Example 17, a first passivation layer is provided between the electron transport layer and the perovskite absorption layer, and a second passivation layer is provided between the hole transport layer and the perovskite absorption layer, respectively. This can further enhance the interface stability and the device stability; and enhance the carrier transport capability, thereby enhancing the energy conversion efficiency of the photovoltaic device.
[0230] The above are only specific embodiments of the present application, but the scope of protection of the present application is not limited thereto. Any person skilled in the art can easily conceive of various equivalent modifications or substitutions within the technical scope disclosed in this application, and such modifications or substitutions should be included in the scope of protection of this application. Therefore, the scope of protection of this application should be based on the scope of protection of the claims.
Claims
1. A photovoltaic device comprising: Perovskite absorber layer; a first electrode; an electron transport layer, disposed between the perovskite absorption layer and the first electrode, the electron transport layer comprising a first organic layer and a second organic layer, the first organic layer being disposed on the perovskite absorption layer, the second organic layer being disposed on a side of the first organic layer facing away from the perovskite absorption layer, the first organic layer comprising a non-polymer, and the second organic layer comprising a polymer; and The oxide buffer layer is disposed between the second organic layer and the first electrode.
2. The photovoltaic device according to claim 1, wherein The non-polymer includes a non-fullerene organic molecule acceptor.
3. The photovoltaic device according to claim 2, wherein: The non-polymer includes one or more of imide substances, heterocyclic substances and aromatic ring substances.
4. The photovoltaic device according to claim 3, wherein: The heterocyclic substances include one or more of pyrrolidone substances, hexaazanaphthalene substances, quinoline substances, thiophene substances, triazine substances, pyridine substances, and hexaazatriphenylene substances.
5. The photovoltaic device according to claim 4, wherein: The pyrrolidone substances include one or more of naphthodipyrrolidone and dione pyrrolopyrrole; and / or The hexaazanaphthyl substance comprises a hexaazanaphthyl main body and a substituent group connected to the hexaazanaphthyl main body, wherein the substituent group comprises one or more groups selected from the group consisting of a fluorine atom, a sulfoxide group and a sulfone group; and / or The quinoline substance comprises a quinoline main body and a substituent group connected to the quinoline main body, wherein the substituent group comprises one or more groups selected from the group consisting of a fluorine atom, a sulfoxide group and a sulfone group; and / or The thiophene-based substance includes a thiophene main body and a substituent group connected to the thiophene main body, and the substituent group includes one or more groups selected from the group consisting of a fluorine atom, a sulfoxide group, and a sulfone group; and / or The triazine substance comprises a triazine main body and a substituent group connected to the triazine main body, wherein the substituent group comprises one or more groups selected from the group consisting of a fluorine atom, a sulfoxide group and a sulfone group; and / or The pyridine substance comprises a pyridine main body and a substituent group connected to the pyridine main body, wherein the substituent group comprises one or more groups selected from the group consisting of a fluorine atom, a sulfoxide group and a sulfone group; and / or The hexaazatriphenylene substance includes a hexaazatriphenylene main body and a substituent group connected to the hexaazatriphenylene main body, and the substituent group includes one or more groups selected from the group consisting of a fluorine atom, a sulfoxide group, and a sulfone group.
6. The photovoltaic device according to any one of claims 3 to 5, wherein The aromatic substances include one or more of tetraphenylethylene and pentacene substances.
7. The photovoltaic device according to any one of claims 3 to 6, wherein: The imide substances include one or more of perylene imide, naphthalene diimide and acenaphthenequinone dicarboximide.
8. The photovoltaic device according to any one of claims 1 to 7, wherein The thickness of the first organic layer is 5 nm to 100 nm.
9. The photovoltaic device according to claim 8, wherein: The thickness of the first organic layer is 10 nm to 20 nm.
10. The photovoltaic device according to any one of claims 1 to 9, wherein The polymer includes one or more of polyfluorene, a conjugated polymer containing amino functional groups composed of naphthalene diimide and thiophene bridge, a copolymer of polynaphthalene diimide-bithiophene, benzobithiophene-perylene diimide, and [poly(naphthalene dibenzotetramethylene-vinylene)].
11. The photovoltaic device according to any one of claims 1 to 10, wherein: The second organic layer has a thickness of 10 nm to 200 nm.
12. The photovoltaic device according to claim 11, wherein: The second organic layer has a thickness of 20 nm to 50 nm.
13. The photovoltaic device according to any one of claims 1 to 12, wherein: The oxide buffer layer includes one or more of tin oxide, tungsten oxide, niobium oxide, indium oxide, cerium oxide, zirconium oxide, chromium oxide, zinc stannate, barium stannate and zinc titanate.
14. The photovoltaic device according to any one of claims 1 to 13, wherein The thickness of the oxide buffer layer is 5 nm to 100 nm.
15. The photovoltaic device according to claim 14, wherein: The thickness of the oxide buffer layer is 5 nm to 20 nm. 16 . The photovoltaic device according to claim 1 , further comprising a first passivation layer disposed between the perovskite absorption layer and the electron transport layer.
17. The photovoltaic device according to claim 16, wherein: The first passivation layer includes one or more of organic halide compounds, inorganic halide compounds, aniline compounds, alkylamine compounds, nitrogen heterocyclic compounds, sulfur heterocyclic compounds, and phosphorus heterocyclic compounds.
18. The photovoltaic device according to any one of claims 1 to 17, further comprising: A hole transport layer is provided on a side of the perovskite absorption layer away from the electron transport layer; as well as The second passivation layer is located between the hole transport layer and the perovskite absorption layer.
19. The photovoltaic device according to claim 18, wherein: The second passivation layer includes one or more of organic halide compounds, inorganic halide compounds, alkylamine compounds, metal oxide semiconductor materials, metal halides and carbazole compounds.
20. The photovoltaic device according to any one of claims 1 to 19, wherein The perovskite absorption layer includes a perovskite material, and the perovskite material includes one or more compounds with a molecular formula of ABX3 or M2CDN6. A and M each independently include Li + 、Na + , K + , Rb + 、Cs + , one or more of methylamino, ethylamino, propylamino, butylamino, pentylamino, hexylamino, amidino or imidazolyl; B includes divalent cations of one or more elements selected from the group consisting of lead, tin, zinc, titanium, antimony, bismuth, nickel, iron, cobalt, silver, copper, gallium, germanium, magnesium, calcium, indium, aluminum, manganese, chromium, molybdenum, and europium; X and N each independently include F - 、Cl - Br - or I - One or more of; C includes Cs + 、Ag + , K + or Ru + One or more of; D includes Bi 3+ 、Ni 3+ 、Fe 3+ 、Sb 3+ 、In 3+ or Cu 3+ One or more of .
21. A photovoltaic module comprising the photovoltaic device according to any one of claims 1 to 20.
22. A power generation device comprising the photovoltaic module according to claim 21.
23. An electrical device comprising the photovoltaic assembly according to claim 21.
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