Stacked OLED device

Abstract

Disclosed in the present invention is a stacked OLED device, comprising an anode layer; a hole injection layer, formed on one side of the anode layer; a first light-emitting layer, formed on the side of the hole injection layer away from the anode layer; a charge generation layer, formed on the side of the first light-emitting layer away from the anode layer, and comprising an anisotropic layer, an N-type charge generation layer, and a P-type charge generation layer that is located on the side of the N-type charge generation layer away from the anode layer, wherein an interface is formed at the junction between the N-type charge generation layer and the P-type charge generation layer, the anisotropic layer is located on the side of the N-type charge generation layer or P-type charge generation layer close to the interface, and a plurality of mutually independent patterns are crystallized and formed on at least part of the surface of the interface; and a second light-emitting layer, formed on the side of the charge generation layer away from the charge generation layer. In the stacked OLED device of the present invention, the anisotropic layer allows carriers to normally pass in the vertical direction while blocking the lateral movement of the carriers, thereby greatly reducing lateral crosstalk and improving display quality.

Description

Stacked OLED device TECHNICAL FIELD

[0001] The present application relates to the field of OLED devices, in particular to a stacked OLED device. BACKGROUND

[0002] In recent years, OLED devices are increasingly widely used in display fields such as wear, mobile phone, tablet, vehicle-mounted, television, etc. Among them, stacked OLED devices have rapidly developed due to their advantages of high brightness and long service life. However, since the stacked OLED device is provided with a charge generation layer with high conductivity, there is a serious horizontal crosstalk when displaying low brightness and low gray scale, which is manifested as a decrease in color accuracy of low gray scale, color deviation of white screen, etc., resulting in poor user experience for consumers.

[0003] In the prior art, an isolation column or an isolation groove is usually used to block the charge generation layer to block the horizontal current crosstalk, but this method needs to increase at least one process, and at the same time of blocking the charge generation layer, the cathode part is also disconnected, thereby causing the cathode conductivity to decrease and the working voltage of the display panel to increase. Inconsistent cathode conductivity will cause significant display unevenness, which increases the production cost and seriously affects the low gray scale display effect.

[0004] SUMMARY

[0005] The present application aims to provide a stacked OLED device, improve the structure of the stacked OLED device, reduce the production cost, and improve the display effect.

[0006] The present application solves the above technical problems by the following technical solutions:

[0007] The present application provides a stacked OLED device, comprising: an anode layer; a hole injection layer formed on one side of the anode layer; a first light-emitting layer formed on a side of the hole injection layer away from the anode layer; a charge generation layer formed on a side of the first light-emitting layer away from the anode layer, comprising an N-type charge generation layer and a P-type charge generation layer located on a side of the N-type charge generation layer away from the anode layer, and a boundary surface formed at the junction of the N-type charge generation layer and the P-type charge generation layer; the charge generation layer further comprises an anisotropic layer, which is located on a side of the N-type charge generation layer or the P-type charge generation layer close to the boundary surface, and the anisotropic layer is crystallized on at least part of the surface of the boundary surface to form a plurality of mutually independent patterns; and a second light-emitting layer formed on a side of the charge generation layer away from the charge generation layer.

[0008] In the technical solution, the anisotropic layer is crystallized into a plurality of independent patterns on at least part of the surface of the interface, on one hand, the carriers can pass through the anisotropic layer in the longitudinal direction, on the other hand, the transverse movement of the carriers in the anisotropic layer is blocked, thereby greatly reducing the transverse crosstalk in the OLED device and improving the display quality of the OLED device.

[0009] In some embodiments, the anisotropic layer is located in the P-type charge generation layer, the N-type charge generation layer is doped with a metal material, the anisotropic layer is metal, and the atomic radius of the metal material doped in the N-type charge generation layer is smaller than the atomic radius of the metal material in the anisotropic layer.

[0010] In the technical solution, the atomic radius of the metal material doped in the N-type charge generation layer is smaller than the atomic radius of the metal material doped in the anisotropic layer, the metal atoms in the anisotropic layer cannot penetrate, and the anisotropic layer is located above the N-type charge generation layer.

[0011] In some embodiments, the thickness of the P-type charge generation layer is 10-20 nm, and the thickness of the N-type charge generation layer is 50-100% of the thickness of the P-type charge generation layer.

[0012] In the technical solution, the N-type charge generation layer and the P-type charge generation layer are set to appropriate thicknesses, which can generate sufficient carriers and avoid affecting the carrier movement rate.

[0013] In some embodiments, the anisotropic layer is located in the N-type charge generation layer, the N-type charge generation layer is doped with a metal material, the anisotropic layer is metal, and the atomic radius of the metal material doped in the N-type charge generation layer is greater than the atomic radius of the metal material in the anisotropic layer.

[0014] In the technical solution, the atomic radius of the metal material doped in the N-type charge generation layer is greater than the atomic radius of the metal material doped in the anisotropic layer, the metal atoms in the anisotropic layer penetrate into the N-type charge generation layer, and the anisotropic layer is located in the N-type charge generation layer.

[0015] In some embodiments, the thickness of the N-type charge generation layer is 10-20 nm, and the thickness of the P-type charge generation layer is 50-100% of the thickness of the N-type charge generation layer.

[0016] In the technical solution, the N-type charge generation layer and the P-type charge generation layer are set to appropriate thicknesses, which can generate sufficient carriers and avoid affecting the carrier movement rate.

[0017] In some embodiments, the anisotropic layer is made of a metal of the IA, IIA, IB, IIB main group or lanthanide series, and has a thickness of 0.5-1.5 nm.

[0018] In the technical solution, the anisotropic layer has a small thickness, which can coordinate the carrier rate, reduce the absorption of visible light, avoid reducing the device efficiency, block the lateral crosstalk, stabilize the carriers, and reduce the production cost of the device.

[0019] In some embodiments, the OLED device further comprises a pixel definition layer, and the pixel definition layer is provided with a plurality of pixel openings; the first light-emitting layer and the second light-emitting layer are each divided into a plurality of mutually independent sub-pixels; each of the sub-pixels in the first light-emitting layer and the same-color sub-pixel in the second light-emitting layer are stacked in the same pixel opening of the pixel definition layer; and the anisotropic layer is crystallized on the upper surface of the pixel definition layer to form a plurality of mutually independent patterns, and the patterns separate the sub-pixels.

[0020] In the technical solution, the anisotropic layer forms patterns between different sub-pixels, thereby separating the sub-pixels and avoiding lateral crosstalk.

[0021] In some embodiments, the anisotropic layer is crystallized on the upper surface of the pixel definition layer to form a plurality of mutually independent patterns, and the projection of the anisotropic layer does not overlap with the projection of the pixel opening.

[0022] In the technical solution, the anisotropic layer is arranged only between the sub-pixels, which can block the lateral crosstalk while reducing the use of materials and the production cost.

[0023] In some embodiments, the part of the anisotropic layer corresponding to each sub-pixel is continuous.

[0024] In the technical solution, the part of the anisotropic layer corresponding to the sub-pixel is continuous, and the part on the pixel definition layer is discontinuous, which can stabilize the movement of the carriers in the sub-pixel and greatly reduce the lateral crosstalk.

[0025] In some embodiments, the first light-emitting layer comprises a first hole transport layer and a first electron transport layer located on the side of the first hole transport layer away from the anode layer; and the second light-emitting layer comprises a second hole transport layer and a second electron transport layer located on the side of the second hole transport layer away from the anode layer.

[0026] In the technical solution, the hole transport layer and the electron transport layer are arranged to enable the normal migration of the carriers in the vertical direction.

[0027] The above-mentioned preferred conditions can be combined arbitrarily to obtain preferred examples of the present application.

[0028] The positive progress effect of the present application is that:

[0029] The anisotropic layer of the stacked OLED device of the present application crystallizes to form a plurality of mutually independent patterns on at least part of the surface of the interface, which on one hand allows the carriers to pass through the anisotropic layer normally in the longitudinal direction, and on the other hand blocks the transverse movement of the carriers within the anisotropic layer, thereby greatly reducing the transverse crosstalk within the stacked OLED device and improving the display quality of the OLED device. BRIEF DESCRIPTION OF DRAWINGS

[0030] The above and other features and advantages of the present application will become more apparent by describing in detail exemplary embodiments thereof with reference to the attached drawings in which:

[0031] Fig. 1 is a schematic cross-sectional view of a stacked OLED device according to an embodiment of the present application.

[0032] Fig. 2 is another schematic cross-sectional view of a stacked OLED device according to an embodiment of the present application.

[0033] Fig. 3 is a schematic cross-sectional view of a charge generation layer of a stacked OLED device according to Embodiment 1 of the present application.

[0034] Fig. 4 is a schematic cross-sectional view of a charge generation layer of a stacked OLED device according to Embodiment 2 of the present application.

[0035] REFERENCE NUMERALS

[0036] 1 Anode layer

[0037] 2 Hole transport layer

[0038] 100 First light-emitting layer

[0039] 31 First hole transport layer

[0040] 41 First electron blocking layer

[0041] 51 First pixel light-emitting layer

[0042] 511 First blue pixel light-emitting layer

[0043] 521 First green pixel light-emitting layer

[0044] 531 First red pixel light-emitting layer

[0045] 61 first electron transport layer

[0046] 7 charge generation layer

[0047] 71 N-type charge generation layer

[0048] 72 P-type charge generation layer

[0049] 73 anisotropic layer

[0050] 200 second light emitting layer

[0051] 32 second hole transport layer

[0052] 42 second electron blocking layer

[0053] 52 second pixel light emitting layer

[0054] 512 second blue pixel light emitting layer

[0055] 522 second green pixel light emitting layer

[0056] 532 second red pixel light emitting layer

[0057] 62 second electron transport layer

[0058] 8 optical adjustment layer

[0059] 81 green pixel optical adjustment layer

[0060] 82 red pixel optical adjustment layer

[0061] 9 cathode layer

[0062] 10 light extraction layer

[0063] 11 pixel definition layer

[0064] 12 pixel opening DETAILED DESCRIPTION

[0065] The present application is described and explained with additional specificity and detail through the use of the accompanying drawings in which:

[0066] The embodiments of the present application will be described in detail with reference to the drawings, wherein:

[0067] In the description of the present application, the expressions "one embodiment", "some embodiments", "an example", "a specific example", or "some examples" indicate that the particular feature, structure, material, or characteristic following the expressions are included in at least one embodiment or example of the present application. In addition, the expressions "in one embodiment", "in some embodiments", "in an example", "in a specific example", or "in some examples" do not necessarily refer to the same embodiment or example, and the combination of one or more features, structures, materials, or characteristics can be included in one or more embodiments or examples of the present application. Furthermore, the specific features, structures, materials, or characteristics can be combined in any suitable manner in one or more embodiments or examples without departing from the spirit of the present application.

[0068] In addition, the terms "first", "second", etc. are used herein only to describe various elements, and do not imply or imply relative importance or order of the elements. Thus, features limited by "first", "second", etc. can explicitly or implicitly include at least one of the features. In the description of the present application, the meaning of "a plurality of" is two or more, unless otherwise specifically limited.

[0069] In order to clearly explain the present application, devices irrelevant to the description are omitted, and the same or similar constituent elements are given the same reference numerals throughout the specification.

[0070] Throughout the specification, when it is said that a device is "connected" to another device, it includes not only the case of "direct connection", but also the case of "indirect connection" in which other elements are interposed therebetween. In addition, when it is said that a device "includes" a certain constituent element, unless otherwise specifically stated, other constituent elements are not excluded, but it means that other constituent elements can also be included.

[0071] When it is said that a device is "on" another device, it can be directly on the other device, but it can also be accompanied by other devices therebetween. When it is said that a device is "directly" on another device, there are no other devices therebetween.

[0072] As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises", "comprising", "includes" and / or "including", when used herein, specify the presence of stated features, steps, operations, elements, components, items, and / or groups but do not preclude the presence or addition of one or more other features, steps, operations, elements, components, items, and / or groups thereof. As used herein, the terms "or" and "and / or" are to be interpreted as inclusive, i.e., as meaning one or any combination of the items. Thus, "A, B or C" or "A, B and / or C" means any of the following: A; B; C; A and B; A and C; B and C; A, B and C. This definition applies only when an element, function, step or operation is in some way inherently mutually exclusive.

[0073] Although not differently defined, technical and scientific terms used herein include technical and scientific terms as commonly understood by one of ordinary skill in the art to which this application belongs. Terms are to be construed as having taken on their plain meaning as commonly understood by one of ordinary skill in the art unless otherwise expressly defined herein, and are not to be interpreted in an overly broad or unduly narrow sense unless expressly so defined herein.

[0074] Embodiment 1

[0075] As shown in FIG. 1, the stacked OLED device in the present embodiment includes an anode layer 1, and, on one side of the anode layer 1, in order from the anode layer 1 in a direction away from the anode layer 1, a hole injection layer (2), a first light emitting layer 100, a charge generation layer 7, a second light emitting layer 200, a cathode layer 9, and an optical extraction layer 10; the first light emitting layer 100 has, in order from the anode layer 1 in a direction away from the anode layer 1, a first hole transport layer 31, a first electron blocking layer 41, a first pixel light emitting layer 51, and a first electron transport layer 61; the second light emitting layer 200 has, in order from the anode layer 1 in a direction away from the anode layer 1, a second hole transport layer 32, a second electron blocking layer 42, a second pixel light emitting layer 52, and a second electron transport layer 62; and the second hole transport layer 32 and the second electron blocking layer 42 have an optical adjustment layer 8 disposed therebetween.

[0076] The charge generation layer 7 has, in order from the anode layer 1 in a direction away from the anode layer 1, an N-type charge generation layer 71 and a P-type charge generation layer 72, and the N-type charge generation layer 71 and the P-type charge generation layer 72 form an interface at a boundary therebetween; and the charge generation layer 7 further includes an anisotropic layer 73, which is crystallized to form a plurality of mutually independent patterns on at least part of a surface of the interface.

[0077] The anisotropic layer 73 is crystallized on at least part of the surface of the interface to form a plurality of mutually independent patterns, on the one hand allowing the carriers to normally pass through the anisotropic layer 73 in the longitudinal direction, and on the other hand blocking the transverse movement of the carriers in the anisotropic layer 73, thereby greatly reducing the transverse crosstalk in the OLED device and improving the display quality of the OLED device.

[0078] As shown in FIG. 3, the anisotropic layer 73 is located on the side of the P-type charge generation layer 72 close to the interface, the N-type charge generation layer 71 is doped with a metal material, the anisotropic layer 73 is metal, and the atomic radius of the metal material doped in the N-type charge generation layer 71 is smaller than the atomic radius of the metal material of the anisotropic layer 73. The atomic radius of the metal material doped in the N-type charge generation layer 71 is smaller than the atomic radius of the metal material of the anisotropic layer 73, and the metal atoms in the anisotropic layer 73 cannot penetrate, so the anisotropic layer 73 is located above the N-type charge generation layer 71.

[0079] In this embodiment, the concentration of the metal material doped in the N-type charge generation layer 71 is 3%, and the P-type charge generation layer 72 is doped with 5% NPD-9 material.

[0080] In other embodiments, the doping ratio in the P-type charge generation layer 72 can also be other values in the range of 5-10%, for example, 7%; and the concentration of the metal material doped in the N-type charge generation layer 71 can also be other values in the range of 1-3%, for example, 1%.

[0081] In this embodiment, the thickness of the P-type charge generation layer 72 is 10 nm, and the thickness of the N-type charge generation layer 71 is 10 nm. The N-type charge generation layer 71 and the P-type charge generation layer 72 are appropriately thick to generate sufficient carriers and avoid affecting the carrier movement rate.

[0082] In other embodiments, the thickness of the P-type charge generation layer 72 can also be other values in the range of 10-20 nm, for example, 12 nm. The thickness of the N-type charge generation layer 71 can also be other values in the range of 50-100% of the thickness of the P-type charge generation layer 72.

[0083] In this embodiment, the material of the anisotropic layer 73 is a metal of the main group IA, IIA, IB, IIB, or lanthanide series actinide series, and the thickness of the anisotropic layer 73 is 0.5-1.5 nm. The anisotropic layer 73 is thin, which realizes the coordination of the carrier rate, reduces the absorption of visible light, avoids reducing the device efficiency, blocks the transverse crosstalk, stabilizes the carriers, and reduces the production cost of the device.

[0084] As shown in Fig. 2, the OLED device further comprises a pixel definition layer 11, and a plurality of pixel openings 12 are arranged on the pixel definition layer 11. The first light-emitting layer 100 and the second light-emitting layer 200 are each divided into a plurality of mutually independent sub-pixels. Each sub-pixel in the first light-emitting layer 100 and a sub-pixel of the same color in the second light-emitting layer 200 are stacked in the same pixel opening 12 of the pixel definition layer 11. The anisotropic layer 73 is crystallized to form a plurality of mutually independent patterns in each sub-pixel and on the upper surface of the pixel definition layer 11, and the patterns separate the sub-pixels. The anisotropic layer 73 is patterned in the charge generation layer 7, thereby separating the sub-pixels and avoiding lateral crosstalk.

[0085] The first light-emitting layer 100 comprises a first hole transport layer 31 and a first electron transport layer 61 located on the side of the first hole transport layer 31 away from the anode layer 1. The second light-emitting layer 200 comprises a second hole transport layer 32 and a second electron transport layer 62 located on the side of the second hole transport layer 32 away from the anode layer 1. The hole transport layer and the electron transport layer are arranged to allow the carriers to migrate normally in the vertical direction.

[0086] In this embodiment, the first pixel light-emitting layer 51 comprises a first blue pixel light-emitting layer 511, a first green pixel light-emitting layer 521, and a first red pixel light-emitting layer 531. The second pixel light-emitting layer 52 comprises a second blue pixel light-emitting layer 512, a second green pixel light-emitting layer 522, and a second red pixel light-emitting layer 532. The optical adjustment layer 8 comprises a green pixel light-emitting adjustment layer 81 corresponding to the first green pixel light-emitting layer 521 and the second green pixel light-emitting layer 522, and a red pixel light-emitting adjustment layer 82 corresponding to the first red pixel light-emitting layer 531 and the second red pixel light-emitting layer 532. The optical adjustment layer 8 adjusts the color value of the visible light after passing through the charge generation layer 7 to keep it substantially consistent with the set value, thereby improving the display quality.

[0087] As shown in Table 1, the performance of the stacked OLED device in this embodiment is compared with that of the stacked OLED device in the prior art.

[0088] Table 1

[0089] Embodiment 2

[0090] As shown in Fig. 4, compared with Embodiment 1 (see Fig. 3), the difference between Embodiment 2 and Embodiment 1 is that:

[0091] The anisotropic layer 73 is located in the N-type charge generation layer 71 near the interface, the N-type charge generation layer 71 is doped with a metal material, the anisotropic layer 73 is metal, and the atomic radius of the metal material doped in the N-type charge generation layer 71 is greater than the atomic radius of the metal material of the anisotropic layer 73. The atomic radius of the metal material doped in the N-type charge generation layer 71 is greater than the atomic radius of the metal material of the anisotropic layer 73, the metal atoms in the anisotropic layer 73 penetrate into the N-type charge generation layer 71, and the anisotropic layer 73 is located in the N-type charge generation layer 71.

[0092] In the embodiment, the concentration of the metal material doped in the N-type charge generation layer 71 is 4%, and the NPD-9 material is doped in the P-type charge generation layer 72 at a proportion of 3%.

[0093] In other embodiments, the proportion of the doped material in the P-type charge generation layer 72 can also be other values in the range of 3-10%, for example, 5%, and the concentration of the metal material doped in the N-type charge generation layer 71 can also be other values in the range of 4-20%, for example, 10%.

[0094] In the embodiment, the thickness of the N-type charge generation layer 71 is 10 nm, and the thickness of the P-type charge generation layer 72 is 10 nm. The N-type charge generation layer 71 and the P-type charge generation layer 72 are provided with appropriate thicknesses to generate sufficient carriers and avoid affecting the carrier moving speed.

[0095] In other embodiments, the thickness of the N-type charge generation layer 71 can also be other values in the range of 10-20 nm, for example, 12 nm. The thickness of the P-type charge generation layer 72 can also be other values in the range of 50-100% of the thickness of the N-type charge generation layer 71.

[0096] As shown in Table 2, the performance of the stacked OLED device in the embodiment is compared with that of the stacked OLED device in the prior art.

[0097] Table 2

[0098] Embodiment 3

[0099] Embodiment 3 is different from Embodiment 1 in that:

[0100] The anisotropic layer 73 is crystallized on the upper surface of the pixel definition layer 11 to form a plurality of mutually independent patterns, and the patterns separate the sub-pixels. The anisotropic layer 73 forms patterns between different sub-pixels, thereby separating the sub-pixels and avoiding lateral crosstalk.

[0101] The anisotropic layer 73 is continuous in the portion corresponding to each sub-pixel. The portion of the anisotropic layer 73 corresponding to the sub-pixel is continuous, while the portion on the pixel defining layer 11 is discontinuous, which stabilizes the carrier movement within the sub-pixel and greatly reduces the lateral crosstalk.

[0102] Embodiment 4

[0103] Embodiment 4 differs from Embodiment 3 in that:

[0104] The anisotropic layer 73 is crystallized to form a plurality of independent patterns only in the range of the upper surface of the pixel defining layer 11, and the projection of the anisotropic layer 73 and the projection of the pixel opening 12 do not overlap each other. The anisotropic layer 73 is arranged only between the sub-pixels, which achieves the effect of blocking the lateral crosstalk while reducing the material usage and lowering the production cost.

[0105] In summary, the present application aims to provide a laminated OLED device, improve the structure of the laminated OLED device, reduce the production cost, and improve the display effect.

[0106] The above is a further detailed description of the present application in combination with specific preferred embodiments, and it cannot be considered that the specific implementation of the present application is limited to these descriptions. For ordinary skilled persons in the technical field to which the present application belongs, a number of simple deductions or substitutions can be made without departing from the concept of the present application, and all of them should be considered as falling within the protection scope of the present application.

Claims

1. A stacked OLED device, characterized in that, The application relates to an organic electroluminescent device, comprising: an anode layer (1); a hole injection layer (2) formed on one side of the anode layer (1); a first light-emitting layer (100) formed on one side of the hole injection layer (2) away from the anode layer (1); a charge generation layer (7) formed on one side of the first light-emitting layer (100) away from the anode layer (1) (100), comprising an N-type charge generation layer (71) and a P-type charge generation layer (72) located on one side of the N-type charge generation layer (71) away from the anode layer (1), and a boundary surface formed at the junction of the N-type charge generation layer (71) and the P-type charge generation layer (72); the charge generation layer (7) further comprises an anisotropic layer (73) located on one side of the N-type charge generation layer (71) or the P-type charge generation layer (72) close to the boundary surface, and the anisotropic layer (73) is crystallized to form a plurality of mutually independent patterns on at least part of the surface of the boundary surface; a second light-emitting layer (200) formed on one side of the charge generation layer (7) away from the charge generation layer (7).

2. The OLED device of claim 1, wherein, The anisotropic layer (73) is located in the P-type charge generation layer (72), the N-type charge generation layer (71) is doped with a metal material, the anisotropic layer (73) is metal, and the atomic radius of the metal material doped in the N-type charge generation layer (71) is smaller than that of the metal material of the anisotropic layer (73).

3. The OLED device of claim 2, wherein, The thickness of the P-type charge generation layer (72) is 10-20 nm, and the thickness of the N-type charge generation layer (71) is 50-100% of the thickness of the P-type charge generation layer (72).

4. The OLED device of claim 1, wherein, The anisotropic layer (73) is located in the N-type charge generation layer (71), the N-type charge generation layer (71) is doped with a metal material, the anisotropic layer (73) is metal, and the atomic radius of the metal material doped in the N-type charge generation layer (71) is greater than that of the metal material of the anisotropic layer (73).

5. The OLED device of claim 4, wherein the first and second layers of the first electrode are formed of the same material. The thickness of the N-type charge generation layer (71) is 10-20 nm, and the thickness of the P-type charge generation layer (72) is 50-100% of the thickness of the N-type charge generation layer (71).

6. The OLED device of claim 1, wherein, The material of the anisotropic layer (73) is a metal of the first IA, IIA, IB, IIB main group or lanthanide series, and the thickness of the anisotropic layer (73) is 0.5-1.5 nm.

7. The OLED device as claimed in claim 1, characterized in that, The OLED device further comprises a pixel definition layer (11) provided with a plurality of pixel openings (12), each of the first light-emitting layer (100) and the second light-emitting layer (200) is divided into a plurality of mutually independent sub-pixels, each of the sub-pixels in the first light-emitting layer (100) and the sub-pixel of the same color in the second light-emitting layer (200) are stacked in the same pixel opening (12) of the pixel definition layer (11), the anisotropic layer (73) is crystallized on the upper surface of the pixel definition layer (11) to form a plurality of mutually independent patterns, and the patterns separate each of the sub-pixels.

8. The OLED device of claim 7, wherein, The anisotropic layer (73) is crystallized on the upper surface of the pixel definition layer (11) to form a plurality of mutually independent patterns, and the projection of the anisotropic layer (73) and the projection of the pixel opening (12) do not overlap.

9. The OLED device as claimed in claim 7, characterized in that, The part of the anisotropic layer (73) corresponding to each of the sub-pixels is continuous.

10. The OLED device of claim 1, wherein, The first light-emitting layer (100) comprises a first hole transport layer (31) and a first electron transport layer (61) located on the side of the first hole transport layer (31) away from the anode layer (1), and the second light-emitting layer (200) comprises a second hole transport layer (32) and a second electron transport layer (62) located on the side of the second hole transport layer (32) away from the anode layer (1).

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