Sensor, imaging device, and electronic apparatus

Abstract

The present invention inhibits structural destruction caused by warpage of a diaphragm. This sensor comprises a base member, a diaphragm that includes a light absorption film and is arranged on the base member such that a cavity part is present therebetween, a beam part that supports the diaphragm on the base member, and a temperature detection element for detecting a temperature change in the light absorption film. The diaphragm includes a plurality of openings arranged non-uniformly in one direction in plan view.

Description

Sensor, imaging device, and electronic device

[0001] The present technology (technology according to the present disclosure) relates to a sensor, an imaging device, and an electronic device.

[0002] Known sensors for detecting terahertz waves, which are electromagnetic waves with a frequency of about 0.3 to 30 THz, include bolometer-type, thermopile-type, pyroelectric-type, and diode-type sensors.

[0003] These sensors have a thermal isolation structure (hollow structure) in which the light receiving section and temperature detecting section are supported in a floating state above the substrate, enabling connection to a readout circuit while achieving high sensitivity. The diaphragms included in these sensors can be formed on the circuit board using semiconductor process technology.

[0004] Diaphragms can be deformed due to internal stress, and Patent Document 1 discloses a technique in which an opening is provided in the diaphragm to reduce stress.

[0005] Furthermore, Patent Document 2 discloses a terahertz wave sensor that uses carbon nanotubes (CNTs) as a light absorbing film for terahertz waves included in a diaphragm.

[0006] JP 2007-210083 A, WO 2023 / 105577

[0007] Conventional sensors with thermal isolation structures (hollow structures) have openings in the diaphragm, such as circular through-holes for forming the hollow structure or elongated through-holes for reducing stress. Because the layout pattern of these openings is generally symmetrical, the direction of diaphragm warping is random and uncontrollable due to stress distribution. Depending on the connection position of the beam, there is a risk of structural damage due to diaphragm warping. Because this structural damage reduces the manufacturing yield of sensors, there is room for improvement.

[0008] An object of the present technology is to provide a technology that can suppress structural damage caused by warping of the diaphragm.

[0009] (1) A sensor according to an aspect of the present technology includes a base member, a diaphragm including a light absorbing film disposed on the base member via a cavity, a beam portion supporting the diaphragm on the base member, and a temperature detection element that detects a temperature change of the light absorbing film. The diaphragm includes a plurality of openings that are unevenly arranged in one direction in a plan view.

[0010] (2) A sensor according to another aspect of the present technology includes: a base member; a diaphragm including a light absorbing film disposed on the base member with a cavity therebetween; a beam portion supporting the diaphragm on the base member; and a temperature detection element detecting a temperature change of the light absorbing film. The diaphragm includes a plurality of through holes and a notch portion cutting inward from a peripheral portion of the diaphragm in a plan view.

[0011] (3) In an imaging device according to another aspect of the present technology, the sensors are arranged in a two-dimensional array.

[0012] (4) An electronic device according to another aspect of the present technology includes the sensor.

[0013] 1. A plan view schematically showing a schematic configuration of a sensor according to a first embodiment of the present technology. FIG. 2. A longitudinal cross-sectional view schematically showing a longitudinal cross-sectional structure taken along the a1-a1 cutting line of FIG. 1. FIG. 3. A longitudinal cross-sectional view schematically showing a longitudinal cross-sectional structure taken along the b1-b1 cutting line of FIG. 1. FIG. 4. A longitudinal cross-sectional view schematically showing a longitudinal cross-sectional structure taken along the c1-c1 cutting line of FIG. 1. FIG. 5. A plan view selectively showing a diaphragm and a beam portion of FIG. 1. FIG. 6. A view according to a modified example 1-1 of the first embodiment, which is a plan view schematically showing an opening pattern of the diaphragm. FIG. 7. A view according to a modified example 1-2 of the first embodiment, which is a plan view schematically showing an opening pattern of the diaphragm. FIG. 8. A view according to a modified example 1-3 of the first embodiment, which is a plan view schematically showing an opening pattern of the diaphragm. FIG. 9. A view according to a modified example 1-4 of the first embodiment, which is a plan view schematically showing an opening pattern of the diaphragm. FIG. 10. A view according to a modified example 1-5 of the first embodiment, which is a plan view schematically showing an opening pattern of the diaphragm. FIG. 1 is a plan view showing a schematic opening pattern of a diaphragm according to a modified example 1-6 of the first embodiment. FIG. 2 is a plan view showing a schematic opening pattern of a diaphragm according to a modified example 1-7 of the first embodiment. FIG. 3 is a plan view showing a schematic opening pattern of a diaphragm according to a modified example 1-8 of the first embodiment. FIG. 4 is a plan view showing a schematic opening pattern of a diaphragm according to a modified example 1-9 of the first embodiment. FIG. 5 is a plan view showing a schematic opening pattern of a diaphragm according to a modified example 1-10 of the first embodiment. FIG. 6 is a plan view showing a schematic opening pattern of a diaphragm according to a modified example 1-11 of the first embodiment. FIG. 7 is a plan view showing a schematic opening pattern of a diaphragm according to a modified example 1-12 of the first embodiment. FIG. 8 is a plan view showing a schematic opening pattern of a diaphragm according to a modified example 1-13 of the first embodiment. FIG. 9 is a plan view showing a schematic opening pattern of a diaphragm according to a modified example 1-14 of the first embodiment. 1-15 and 1-16 are plan views showing the opening patterns of the diaphragm according to Modification 1-15 and Modification 1-16 of the first embodiment, respectively.9 is a diagram according to a modified example 1-17 of the first embodiment, and is a plan view schematically showing an opening pattern of the diaphragm. FIG. 10 is a plan view schematically showing a schematic configuration of a sensor according to a second embodiment of the present technology. FIG. 11 is a longitudinal sectional view schematically showing a longitudinal sectional structure taken along the a8-a8 cutting line of FIG. 8. FIG. 12 is a plan view selectively showing the diaphragm and beam portion of FIG. 8. FIG. 13 is a diagram according to a modified example 2-1 of the second embodiment, and is a plan view schematically showing an opening pattern of the diaphragm. FIG. 14 is a diagram according to a modified example 2-2 of the second embodiment, and is a plan view schematically showing an opening pattern of the diaphragm. FIG. 15 is a diagram according to a modified example 2-3 of the second embodiment, and is a plan view schematically showing an opening pattern of the diaphragm. FIG. 16 is a diagram according to a modified example 2-4 of the second embodiment, and is a plan view schematically showing an opening pattern of the diaphragm. FIG. 17 is a diagram according to a modified example 2-5 of the second embodiment, and is a plan view schematically showing an opening pattern of the diaphragm. FIG. 18 is a diagram according to a modified example 2-6 of the second embodiment, and is a plan view schematically showing an opening pattern of the diaphragm. 15A . FIG. 15B is a diagram according to Modification 2-7 of the second embodiment, and is a plan view schematically showing an opening pattern of the diaphragm. FIG. 15C is a diagram according to Modification 2-8 of the second embodiment, and is a plan view schematically showing an opening pattern of the diaphragm. FIG. 15D is a diagram according to Modification 2-9 of the second embodiment, and is a plan view schematically showing an opening pattern of the diaphragm. FIG. 15E is a diagram according to Modification 2-10 of the second embodiment, and is a plan view schematically showing an opening pattern of the diaphragm. FIG. 15F is a diagram according to Modification 2-10 of the second embodiment, and is a plan view schematically showing a general configuration of a sensor according to a third embodiment of the present technology. FIG. 15C is a longitudinal sectional view schematically showing a longitudinal sectional structure taken along the a15-a15 cutting line of FIG. 15A . FIG. 15D is a longitudinal sectional view schematically showing a longitudinal sectional structure of a sensor according to a fourth embodiment of the present technology. FIG. 15E is a longitudinal sectional view schematically showing a longitudinal sectional structure of a sensor according to a fifth embodiment of the present technology. FIG. 15F is a longitudinal sectional view schematically showing a longitudinal sectional structure of a sensor according to a sixth embodiment of the present technology. FIG. 15F is a longitudinal sectional view schematically showing a process of a method for manufacturing a sensor according to a sixth embodiment of the present technology. FIG. 15G is a longitudinal sectional view schematically showing a process subsequent to the process of FIG. 19B, 19C, and 19D are longitudinal sectional views schematically showing a step subsequent to the step of Fig. 19B, Fig. 19C, and Fig. 19D, respectively.21B. FIG. 21C. FIG. 21D. FIG. 21E. FIG. 21F. FIG. 21G. FIG. 21G is a block diagram showing an example of a configuration of an imaging device according to an eighth embodiment of the present technology. FIG. 21C is a circuit diagram of a voltage readout type readout circuit. FIG. 21D is a block diagram showing an example of a configuration of an imaging device according to an eighth embodiment of the present technology. FIG. 21D is a block diagram showing an example of a configuration of a pixel array unit. FIG. 21D is a circuit diagram of a voltage readout type readout circuit. FIG. 21F is a circuit diagram of a CTIA type readout circuit. FIG. 21G is a block diagram showing an example of a configuration of an electronic device according to a ninth embodiment of the present technology. FIG. 21D is a block diagram showing an example of a configuration of a vehicle control system. FIG. 21C is a block diagram showing an example of a configuration of an external vehicle information detection unit and an imaging unit.

[0014] Hereinafter, embodiments of the present technology will be described in detail with reference to the drawings. Note that in the drawings referred to in the following description, the same or similar parts are denoted by the same or similar reference numerals. However, it should be noted that the drawings are schematic, and the relationship between thickness and planar dimensions, the thickness ratio of each layer, etc. may differ from the actual ones. Therefore, specific thicknesses and dimensions should be determined with reference to the following description.

[0015] Furthermore, it goes without saying that the dimensional relationships and ratios may differ between the drawings. Furthermore, the effects described in this specification are merely examples and are not intended to be limiting, and other effects may also be present.

[0016] Furthermore, the following embodiments exemplify devices and methods for embodying the technical idea of ​​the present technology, and do not limit the configuration to the following. In other words, the technical idea of ​​the present technology can be modified in various ways within the technical scope described in the claims.

[0017] Furthermore, the definitions of directions such as up and down in the following description are merely for the sake of convenience and do not limit the technical concept of the present technology. For example, if an object is rotated 90 degrees and observed, up and down are converted to left and right and read as such, and if an object is rotated 180 degrees and observed, up and down are obviously read as reversed.

[0018] In the following embodiments, among the three mutually orthogonal directions in space, a first direction and a second direction that are mutually orthogonal in the same plane are defined as the X direction and the Y direction, respectively, and a third direction that is orthogonal to both the first direction and the second direction is defined as the Z direction. In the following embodiments, the thickness direction of the sensor will be described as the Z direction.

[0019] In the following embodiments, a plan view refers to a case where the sensor is viewed from the Z direction (one direction), and a cross-sectional view refers to a case where a cross section along the Z direction (one direction) is viewed from a direction perpendicular to the cross section (Z direction).

[0020] First Embodiment In this first embodiment, an example in which the present technology is applied to a thermopile sensor will be described. Also, in this first embodiment, a case in which the symmetry of the opening pattern of the diaphragm is broken by the arrangement of the through holes will be described.

[0021] <Sensor Configuration> First, the configuration of the sensor 1A will be described with reference to FIGS. 1 to 5. FIG. 1 is a plan view schematically showing a schematic configuration of a sensor according to a first embodiment of the present technology. FIG. 2 is a longitudinal cross-sectional view schematically showing a longitudinal cross-sectional structure taken along the a1-a1 cutting line in FIG. 1. FIG. 3 is a longitudinal cross-sectional view schematically showing a longitudinal cross-sectional structure taken along the b1-b1 cutting line in FIG. 1. FIG. 4 is a longitudinal cross-sectional view schematically showing a longitudinal cross-sectional structure taken along the c1-c1 cutting line in FIG. 1. FIG. 5 is a plan view selectively showing the diaphragm and beam portion in FIG. 1. Note that the number of through holes 41 shown in FIGS. 2 and 3 does not match the number of through holes along the cutting line shown in FIG. 1.

[0022] 1 and 2 , a sensor 1A according to a first embodiment of the present technology includes a circuit board 10 as a base member, and a frame portion 20 provided on the first surface portion 10a of a first surface portion 10a and a second surface portion 10b located on opposite sides of the circuit board 10. The sensor 1A according to the first embodiment of the present technology also includes a diaphragm 30A including a light absorbing film 32 provided on the first surface portion 10a of the circuit board 10 via a cavity portion 70, a beam portion 50 supporting the diaphragm 30A on the first surface portion 10a of the circuit board 10, and a temperature detection element 60 detecting a temperature change of the light absorbing film 32. The diaphragm 30A according to the first embodiment further includes a plurality of through holes 41 as the plurality of openings 40.

[0023] For example, a semiconductor substrate such as a silicon substrate or a glass substrate can be used as the circuit board 10. Although not shown, the circuit board 10 is provided with a readout circuit for reading out the detection value of the temperature detection element 60.

[0024] Here, the sensor 1A according to the first embodiment is a thermopile sensor, but the present technology can also be applied to bolometer, pyroelectric, diode, and other types of sensors.

[0025] In the first embodiment, the plurality of through holes 41 correspond to a specific example of "openings" in the present technology, and the circuit board 10 corresponds to a specific example of "base member" in the present technology.

[0026] 2 , the frame 20 includes, for example, but not limited to, an insulating film 21 and an insulating film 25a provided on the side of the insulating film 21 opposite to the circuit board 10. The insulating film 21 and the insulating film 25a are stacked in this order on the first surface 10a of the circuit board 10.

[0027] The insulating film 21 functions as a sacrificial oxide film for forming the cavity 70 between the circuit board 10 and the diaphragm 30A. As the insulating film 21, for example, a silicon oxide (SiO) film can be used.

[0028] The insulating film 25 a and the insulating film 25 b described below are formed by patterning a deposited insulating film in the manufacturing process. Examples of the insulating film that can be used include a silicon nitride (SiN) film, a silicon oxide (SiO) film, and an aluminum oxide (AlO) film.

[0029] 1, the frame 20 has, for example, a rectangular planar shape, although this is not limited thereto, and the accommodation area surrounded by the frame 20 also has a rectangular planar shape. The diaphragm 30A is disposed in the accommodation area surrounded by the frame 20.

[0030] 1 and 2, the diaphragm 30A is provided inside the frame 20 (accommodation area) on the first surface 10a side of the circuit board 10 via a hollow portion 70. In other words, the diaphragm 30A is disposed on the circuit board 10 via the hollow portion 70 in the thickness direction (Z direction) of the sensor 1A.

[0031] The diaphragm 30A includes an insulating film 25b and a light absorbing film 32 provided on the side of the insulating film 25b opposite the circuit board 10 side. The insulating film 25b in this first embodiment faces the entire light absorbing film 32 in a plan view and separates the entire light absorbing film 32 from the cavity 70. In other words, the entire surface of the light absorbing film 32 on the cavity 70 side (circuit board 10 side) of the light absorbing film 32 in this first embodiment is covered with the insulating film 25b, and the light absorbing film 32 is structurally separated from the cavity 70 by the insulating film 25b. The insulating film 25b electrically separates the light absorbing film 32 and the temperature detection element 60.

[0032] The light absorbing film 32 is made of a substance that absorbs terahertz waves or infrared rays, and functions as a light receiving portion of the diaphragm 30 A. Examples of materials for the light absorbing film 32 include fibrous materials such as carbon fiber, carbon nanotubes (CNTs), and nanowires, and sheet-like materials such as graphene.

[0033] 1 and 5, the diaphragm 30A has a rectangular planar shape in plan view. As shown in FIG. 5, the diaphragm 30A has a peripheral edge 31 formed by four sides 31a. １ , 31a ２ , 31a ３ and 31a ４ and the four corners 31b １ , 31b ２ , 31b ３ and 31b ４ and,

[0034] Four sides 31a １ , 31a ２ , 31a ３ and 31a ４ Among these, two side portions 31a １ and 31a ２ are located opposite to each other in the X direction, and the remaining two side portions 31a ３ and 31a ４ are located on opposite sides to each other in the Y direction.

[0035] In addition, the four corners 31b １ , 31b ２ , 31b ３ and 31b ４ Among these, two corners 31b １ and 31b ２ is one of the two diagonal lines of the diaphragm 30A (the diagonal line Ld shown in FIG. 7A). １ 7A ) along one diagonal direction (the diagonal direction XY １ ) are located opposite to each other, and the remaining two corners 31b ３ and 31b ４ is the other of the two diagonal lines of the diaphragm 30A (the diagonal line Ld shown in FIG. 7A). ２ 7A ) along the other diagonal direction (the diagonal direction XY ２ ) are located opposite each other.

[0036] In this first embodiment, the four side portions 31a １ , 31a ２ , 31a ３ and 31a４ Each of the first side portions 31a １ , second side portion 31a ２ , third side portion 31a ３ and the fourth side portion 31a ４ In the first embodiment, the four corners 31b １ , 31b ２ , 31b ３ and 31b ４ Each of the first corner portions 31b １ , second corner 31b ２ , third corner 31b ３ and the fourth corner portion 31b ４ In the first embodiment, the cavity 70 may also be referred to as a space 70 or a hollow portion 70.

[0037] 1 and 5, a plurality of beam portions 50 are provided. In the first embodiment, for example, four beam portions 50 (50a, 50b, 50c, 50d) are provided, although this is not limited thereto.

[0038] Of the four beams 50, two beams 50a and 50b are connected to the side 31a of the diaphragm 30A. ３ The two beams 50a and 50b are arranged on the outside of the side 31a of the diaphragm 30A. ３ The other end of each of the beams 50a and 50b is connected to the diaphragm 30A at the side thereof, and the other end of each of the beams 50a and 50b is connected to the frame 20. In plan view, each of the beams 50a and 50b is connected to the side 31a of the diaphragm 30A. ３ a first portion extending in a direction away from the first portion (Y direction), and a side portion 31a of the diaphragm 30A extending from the first portion ３ and a second portion extending in the direction along the first direction (X direction).

[0039] Of the four beams 50, the remaining two beams 50c and 50d are located at the side 31a of the diaphragm 30A. ４ The two beams 50c and 50d are arranged on the outside of the side 31a of the diaphragm 30A. ４The other end of each of the two beams 50c and 50d is connected to the diaphragm 30A at the side thereof, and the other end of each of the beams 50c and 50d is connected to the frame 20. ４ a first portion extending in a direction away from the first portion (Y direction), and a side portion 31a of the diaphragm 30A extending from the first portion ４ and a second portion extending in the direction along the first direction (X direction).

[0040] That is, the diaphragm 30A of this first embodiment is supported by the frame portion 20 by the four beam portions 50 in a state where it is separated from the circuit board 10 via the cavity portion 70, in other words, floating above the circuit board 10.

[0041] As shown in FIG. 5, one end side of each of the two beam portions 50a and 50b is located between the two side portions 31a of the diaphragm 30A in a plan view. ３ and 31a ４ A center line L crossing each of the middle parts of １ Also, on one end side of each of the two beam portions 50c and 50d, the two side portions 31a of the diaphragm 30A are connected to the diaphragm 30A in a plan view. ３ and 31a ４ A center line L crossing each of the middle parts of １ The diaphragm 30A is connected to the diaphragm 30A in the vicinity of the diaphragm 30A.

[0042] 1 and 2 , the temperature detection element 60 is provided on the beam portion 50. Although not limited thereto, the temperature detection element 60 of the first embodiment is provided, for example, on the side of the beam portion 50 opposite the circuit board 10 side. The temperature detection element 60 extends along the extension direction of the beam portion 50 and has the same L-shaped planar shape as the beam portion 50.

[0043] The temperature detection element 60 is provided for each beam portion 50. The temperature detection element 60 detects the temperature difference between the diaphragm 30A and the surrounding area. The material of the temperature detection element 60 is, for example, Si, SiGe, Bi. ２ Te ３ Thermoelectric conversion materials such as the above can be used.

[0044] The temperature detection element 60 may be provided inside the beam portion, or may be configured as the beam portion.

[0045] <Through Holes of Diaphragm> As shown in Fig. 1, each of the multiple through holes 41 included in the diaphragm 30A has a planar shape, for example, a circular shape in a plan view. As shown in Fig. 2, the multiple through holes 41 extend in the thickness direction (Z direction) of the diaphragm 30A and penetrate the diaphragm 30A. In this first embodiment, each of the multiple through holes 41 penetrates the light absorbing film 32 and the insulating film 25b of the diaphragm 30A. The multiple through holes 41 are gas supply holes for supplying etching gas when etching the sacrificial film to form a cavity.

[0046] <Arrangement pattern of through holes> As shown in Figures 1 and 4, the plurality of through holes 41 are arranged non-uniformly in the X direction. And, as shown in Figures 1 and 3, the plurality of through holes 41 are arranged uniformly in the Y direction. That is, the plurality of through holes 41 are arranged in an arrangement pattern (layout) in which they are arranged non-uniformly in the X direction and uniformly in the Y direction. As shown in Figures 1 and 4, the plurality of through holes 41 are arranged in an arrangement in which the density increases from the peripheral edge portion 31 side of the diaphragm 30A toward the inside in the X direction. That is, the plurality of through holes 41 are arranged so that the density increases from the peripheral edge portion 31 side of the diaphragm 30A toward the inside in a plan view. ３ and 31a ４ A center line L crossing each of the middle parts of １ The density is highest near .

[0047] Here, the X direction is the direction of the two sides 31a of the diaphragm 30A that are located on opposite sides to each other in a plan view. １ and 31a ２ 4 and 5, the plurality of through holes 41 in the first embodiment are arranged on the peripheral edge 31 side of the diaphragm 30A (two side portions 31a １ and 31a ２ Each side of the inner center line L １They are arranged in a pattern where the density increases towards the top.

[0048] 2, a reflector 11 that reflects infrared rays is provided on the first surface 10a side of the circuit board 10. The reflector 11 is provided at a position overlapping the diaphragm 30A in a plan view. The reflector 11 is preferably made of a material that has high reflection efficiency for terahertz waves and infrared rays, and metal materials such as Au, Pt, Al, and W can be used.

[0049] 2, wiring 22 and contact vias 23 included in the conductive path are provided in the insulating film 21. The wiring 22 and contact vias 23 electrically connect the temperature detection element 60 to a readout circuit provided on the circuit board 10. The wiring 22 and contact vias 23 can be formed using a metal material such as copper (Cu).

[0050] <<Main Effects of the First Embodiment>> Next, the main effects of the first embodiment will be described. In the sensor 1A according to the first embodiment, the diaphragm 30A includes a plurality of through holes 41 as a plurality of openings 40 that are unevenly arranged in one direction, that is, the X direction. The plurality of through holes 41 are arranged on the peripheral portion 31 side (side portion 31a) of the diaphragm 30A in the X direction. １ Side and edge portion 31a ２ side) to the inner center line L １ The through holes 41 are arranged in an arrangement pattern in which the density increases toward the center. By varying the arrangement density of the plurality of through holes 41 in this manner, stress can be alleviated in a specific direction, and the symmetry of the arrangement pattern (opening pattern) of the openings 40 (through holes 41) in the diaphragm 30A can be broken. This makes it possible to control the warping direction of the diaphragm 30A, unlike conventional cases in which the opening pattern in the diaphragm is symmetrical in the vertical and horizontal directions. Therefore, the sensor 1A according to the first embodiment can suppress structural damage caused by warping of the diaphragm 30A.

[0051] Furthermore, by connecting the beam portion 50 to the vicinity of the area where the warp of the diaphragm 30A is maximum or minimum, structural damage can be suppressed even when the diaphragm 30A is warped.

[0052] Furthermore, stress caused by warping of the diaphragm 30A tends to concentrate near the connection where the diaphragm 30A is connected to the beam portion 50. Therefore, by adopting an arrangement pattern in which the density of the through holes 41 is increased near the connection where the diaphragm 30A is connected to the beam portion 50, as in the first embodiment, structural damage caused by warping of the diaphragm 30A can be further suppressed.

[0053] Each component, such as the circuit board 10, the insulating film (21, 25a, 25b), the light absorbing film 32, the beam portion 50, and the temperature detection element 60, may be made of a single material, or may be made of a laminate or composite of multiple materials.

[0054] Furthermore, the light absorbing film 32 can be made porous depending on the material and film formation method, and can allow etching gas to pass through when etching the sacrificial film to form the cavity 70. In this case, it is not necessary to provide through holes in the light absorbing film 32, so a structure in which through holes are provided only in the insulating film 25b may be used.

[0055] 5 may be rotated by 90 degrees. In this case, the through-holes 41 are arranged in a non-uniform arrangement in which the density increases from the peripheral edge 31 of the diaphragm 30A toward the inside in the Y direction. In this case, the opening pattern can also break symmetry, and the same effect as in the first embodiment can be obtained.

[0056] <Modifications of First Embodiment> <Modification 1-1> FIG. 6A is a diagram according to Modification 1-1 of the first embodiment, and is a plan view schematically showing an opening pattern of a diaphragm.

[0057] As shown in FIG. 6A , the diaphragm 30A of this modified example 1-1 includes, as the openings 40, elongated through holes 42 instead of the circular through holes 41 shown in FIG. 5 of the first embodiment. The diaphragm 30A of this modified example 1-1 includes a plurality of through holes 42 that are unevenly arranged in one direction, the X direction. Each of the plurality of through holes 42 has an elongated planar shape in a plan view and is spaced apart from the peripheral edge portion 31 of the diaphragm 30A. Although not shown in detail, each of the plurality of through holes 42 penetrates the light absorbing film 32 and the insulating film 25b of the diaphragm 30A in the thickness direction (Z direction) of the diaphragm 30A, similar to the above-described through holes 41.

[0058] In the diaphragm 30A of the modified example 1-1, the through-hole 42 having a long shape extending in the Y direction is formed on the peripheral edge portion 31 side (side portion 31a) of the diaphragm 30A in the X direction. １ and side portion 31a ２ each side) from the inner center line L １ The pattern includes a plurality of openings arranged in a line in a non-uniform arrangement with increasing density toward the center.

[0059] In the opening pattern of the diaphragm 30A shown in this modified example 1-1, the symmetry can also be broken, and therefore the same effect as in the first embodiment can be obtained.

[0060] Although not shown, the same effect as in the first embodiment can be obtained by rotating the opening pattern of the diaphragm 30A shown in FIG. 6A by 90 degrees. In this case, the opening pattern is such that the elongated through-holes 42 extending in the X direction in a plan view are positioned closer to the peripheral edge 31 side (side 31a) of the diaphragm 30A in the Y direction. ３ and side portion 31a ４ Each side of the inner center line L １ The pattern is made up of multiple openings arranged in a non-uniform arrangement with the density increasing towards the center.

[0061] <Modification 1-2> FIG. 6B is a diagram according to Modification 1-2 of the first embodiment, and is a plan view schematically showing an opening pattern of the diaphragm.

[0062] As shown in FIG. 6B, in the diaphragm 30A of the modified example 1-2, the elongated through-hole 42 extending in the Y direction is formed on the peripheral edge 31 side (side 31a) of the diaphragm 30A in the X direction. １ and side portion 31a ２ Each side of the inner center line L １ The pattern includes a plurality of openings arranged in two rows in a non-uniform arrangement with increasing density toward the center.

[0063] The opening pattern of the diaphragm 30A shown in this modified example 1-2 can also break symmetry, so that the same effect as in the first embodiment can be obtained.

[0064] Although not shown, the same effect as in the first embodiment can be obtained by rotating the opening pattern of the diaphragm 30A shown in Fig. 6B by 90 degrees. In this opening pattern, the through holes 42 extend in the X direction, and the arrangement direction of the through holes 42 is the Y direction.

[0065] <Modification 1-3> FIG. 6C is a diagram according to Modification 1-3 of the first embodiment, and is a plan view schematically showing an opening pattern of the diaphragm.

[0066] 6C, the diaphragm 30A of the modified example 1-3 includes an opening pattern in which the elongated through-holes 42 are arranged in three rows. That is, the diaphragm 30A of the modified example 1-3 has the elongated through-holes 42 extending in the Y direction arranged on the peripheral edge 31 side (side 31a １ and side portion 31a ２ The opening pattern includes a plurality of openings arranged in three rows in a non-uniform arrangement with the density increasing from the outer edge (each side of the opening) toward the inside.

[0067] The opening pattern of the diaphragm 30A shown in this modified example 1-3 can also break symmetry, so that the same effect as in the first embodiment can be obtained.

[0068] Although not shown, the same effect as in the first embodiment can be obtained by rotating the opening pattern of the diaphragm 30A shown in Fig. 6C by 90 degrees. In this opening pattern, the through holes 42 extend in the X direction, and the arrangement direction of the through holes 42 is the Y direction.

[0069] <Modification 1-4> FIG. 6D is a diagram according to Modification 1-4 of the first embodiment, and is a plan view schematically showing an opening pattern of the diaphragm.

[0070] As shown in Fig. 6D, the diaphragm 30A of this modified example 1-4 includes slits 43 as openings 40 instead of the circular through-holes 41 of the first embodiment shown in Fig. 5. That is, the diaphragm 30A of this modified example 1-1 includes a plurality of slits 43 that are unevenly arranged in one direction, that is, the X direction. Each of the plurality of slits 43 has an elongated planar shape that cuts inward (inward) from the peripheral edge portion 31 of the diaphragm 30A in a plan view with a predetermined width.

[0071] The opening pattern of the diaphragm 30A of this modified example 1-4 is such that the slits 43 are cut inward from the peripheral edge 31 of the diaphragm 30A in the Y direction, and the slits 43 are cut inward from the peripheral edge 31 of the diaphragm 30A in the X direction, which is one direction, along the center line L １ The density of the particles increases unevenly toward the two opposite sides 31a of the diaphragm 30A. ３ and 31a ４ The opening pattern is such that a plurality of openings are individually arranged on each side of the opening.

[0072] The opening pattern of the diaphragm 30A shown in this modified example 1-4 can also break symmetry, so that the same effect as in the first embodiment can be obtained.

[0073] Although not shown, the same effect as in the first embodiment can be obtained by rotating the opening pattern of the diaphragm 30A shown in Fig. 6D by 90 degrees. In this opening pattern, the slits 43 extend in the X direction, and the arrangement direction of the slits 43 is the Y direction.

[0074] <Modification 1-5> FIG. 6E is a diagram according to Modification 1-5 of the first embodiment, and is a plan view schematically showing an opening pattern of the diaphragm.

[0075] As shown in FIG. 6E, the opening pattern of the diaphragm 30A of this modified example 1-5 is a combination of the opening pattern shown in FIG. 6D of the modified example 1-4 and the opening pattern shown in FIG. 6A of the modified example 1-1.

[0076] That is, in the diaphragm 30A of this modified example 1-5, the slits 43 cutting inward from the peripheral edge 31 of the diaphragm 30A in the Y direction are formed on the peripheral edge 31 side of the diaphragm 30A (two side portions 31a １ and 31a ２ Each side of the inner center line L １ The density of the particles increases unevenly toward the two opposite sides 31a of the diaphragm 30A. ３ and 31a ４ The diaphragm 30A of the modified example 1-5 includes an opening pattern in which a plurality of elongated through holes 42 extending in the Y direction are arranged in a row between two slit rows in which the slits 43 are aligned.

[0077] The opening pattern of the diaphragm 30A shown in this modified example 1-5 can also break symmetry, so that the same effect as in the first embodiment can be obtained.

[0078] Although not shown, the same effect as in the first embodiment can be obtained with an opening pattern obtained by rotating the opening pattern of the diaphragm 30A shown in Fig. 6E by 90 degrees. In this opening pattern, the slits 43 and the through holes 42 each extend in the X direction, and the arrangement direction of the slits 43 and the arrangement direction of the through holes 42 are the Y direction.

[0079] <Modification 1-6> FIG. 6F is a diagram according to Modification 1-6 of the first embodiment, and is a plan view schematically showing an opening pattern of the diaphragm.

[0080] As shown in Figure 6F, the opening pattern of the diaphragm 30A of this modified example 1-6 includes the circular through-hole 41 shown in Figure 5 of the first embodiment described above and the elongated through-hole 42 shown in Figure 6A of the modified example 1-1 described above.

[0081] The circular through-holes 41 are formed on two side portions 31a of the diaphragm 30A that are located on opposite sides of the diaphragm 30A in a plan view. ３ and 31a ４ A plurality of the diaphragms 30A are individually arranged in groups on each side of the diaphragm 30A. ３ The plurality of through holes 41 grouped on the side are located on the peripheral edge 31 side (side 31a) of the diaphragm 30A in the X direction, which is one direction. １ and side portion 31a ２ Each side of the inner center line L １ The diaphragms 30A are arranged in a non-uniform arrangement with the density increasing toward the edge 31a, and are arranged uniformly in the Y direction. ４ The plurality of through holes 41 that form a group on the side are also arranged on the peripheral edge 31 side (side 31a) of the diaphragm 30A in the X direction, which is one direction. １ and side portion 31a ２ Each side of the inner center line L １ The pores are arranged in a non-uniform arrangement with the density increasing toward the center, and are arranged uniformly in the Y direction.

[0082] The elongated through-hole 42 extends in the Y direction and is positioned on the peripheral edge 31 side (side portion 31a) of the diaphragm 30A in the X direction, which is one direction. １ and side portion 31a ２ Each side of the inner center line L １ The plurality of through holes 42 are arranged in a non-uniform arrangement with the density increasing toward the center. The plurality of through holes 42 are arranged between two groups of through holes 41.

[0083] The opening pattern of the diaphragm 30A shown in this modified example 1-6 can also break symmetry, so that the same effect as in the first embodiment can be obtained.

[0084] Although not shown, the same effect as in the first embodiment can be obtained with an opening pattern obtained by rotating the opening pattern of the diaphragm 30A shown in Fig. 6F by 90 degrees. In this opening pattern, the multiple through holes 41 in each group are arranged in a non-uniform arrangement in which the density increases from the peripheral edge 31 of the diaphragm 30A inward in the Y direction.

[0085] <Modification 1-7> FIG. 6G is a diagram according to Modification 1-7 of the first embodiment, and is a plan view schematically showing an opening pattern of the diaphragm.

[0086] As shown in FIG. 6G, the opening pattern of the diaphragm 30A of this modified example 1-7 is such that the positional relationship between the circular through-holes 41 and the elongated through-holes 42 shown in FIG. 6F of the above modified example 1-6 is reversed.

[0087] That is, the opening pattern of the diaphragm 30A of this modification 1-7 is such that the two side portions 31a located on the opposite sides of the diaphragm 30A in a plan view are ３ and 31a ４ The insulating film includes a plurality of through holes 42 arranged in separate rows on each side of the insulating film, and a plurality of through holes 41 arranged between two rows of the plurality of through holes 41.

[0088] Side portion 31a of diaphragm 30A ３ The plurality of through holes 42 arranged in a row on the side extend in the Y direction and are spaced apart from the peripheral portion 31 side (side portion 31a) of the diaphragm 30A in the X direction, which is one direction. １ and side portion 31a ２ Each side of the inner center line L １ They are arranged in an uneven arrangement with increasing density towards the center.

[0089] In addition, the side portion 31a of the diaphragm 30A ４ The plurality of through holes 42 arranged in a row on the side of the diaphragm 30A are also arranged on the peripheral portion 31 side (side portion 31a) of the diaphragm 30A in the X direction, which is one direction. １ and side portion 31a ２ Each side of the inner center line L １ They are arranged in an uneven arrangement with increasing density towards the center.

[0090] The plurality of through holes 41 are formed on the peripheral portion 31 side (side portion 31a) of the diaphragm 30A in the X direction, which is one direction. １ and side portion 31a ２ Each side of the inner center line L １ The particles are arranged in a non-uniform arrangement with increasing density in the Y direction, and are arranged uniformly in the Y direction.

[0091] The opening pattern of the diaphragm 30A of this modified example 1-7 can also break symmetry, so that the same effect as in the first embodiment can be obtained.

[0092] Although not shown, the same effect as in the first embodiment can be obtained with an opening pattern obtained by rotating the opening pattern of the diaphragm 30A shown in FIG. 6G by 90 degrees.

[0093] <Modification 1-8> FIG. 6H is a diagram according to Modification 1-8 of the first embodiment, and is a plan view schematically showing an opening pattern of the diaphragm.

[0094] As shown in Figure 6H, the opening pattern of the diaphragm 30A of this modified example 1-8 is an opening pattern that combines the arrangement of the slits 43 shown in Figure 6D of the above-mentioned modified example 1-4 and the arrangement of the circular through holes 41 shown in Figure 6G of the above-mentioned modified example 1-7.

[0095] That is, the opening pattern of the diaphragm 30A of this modification 1-8 is such that the two side portions 31a located on the opposite sides of the diaphragm 30A in a plan view are ３ and 31a ４ The insulating film 40 includes a plurality of slits 43 arranged in separate rows on each side of the insulating film 40, and a plurality of circular through holes 41 arranged between the two rows of the slits 43.

[0096] As in the above-described modified example 1-7, the plurality of through holes 41 are formed on the peripheral portion 31 side (side portion 31a) of the diaphragm 30A in the X direction, which is one direction. １ and side portion 31a ２ Each side of the inner center line L １ The particles are arranged in a non-uniform arrangement with increasing density in the Y direction, and are arranged uniformly in the Y direction.

[0097] Two side portions 31a of the diaphragm 31A ３ and 31a ４ The plurality of slits 43 arranged in a row on each side of the diaphragm 30A extend in the Y direction in a plan view, and are spaced apart from the periphery 31 of the diaphragm 30A in the X direction, which is one direction, as in the above-described modified example 1-4 (see FIG. 6D). １ and side portion 31a ２Each side of the inner center line L １ They are arranged in an uneven arrangement with increasing density towards the center.

[0098] The opening pattern of the diaphragm 30A shown in this modified example 1-8 can also break symmetry, so that the same effect as in the first embodiment can be obtained.

[0099] Although not shown, the same effect as in the first embodiment can be obtained with an opening pattern obtained by rotating the opening pattern of the diaphragm 30A shown in FIG. 6H by 90 degrees.

[0100] <Modification 1-9> FIG. 7A is a diagram according to Modification 1-9 of the first embodiment, and is a plan view schematically showing an opening pattern of a diaphragm.

[0101] In this modification 1-9, the direction in which the circular through holes 41 are unevenly arranged in the first embodiment (see FIG. 5) is changed from the X direction to the diagonal XY direction of the diaphragm 30A. １ It has been replaced with.

[0102] Specifically, as shown in FIG. 7A, the opening pattern of the diaphragm 30A of this modification 1-9 is such that the openings are spaced apart from each other along two diagonal lines Ld １ , Ld ２ One of the diagonals Ld １ Diagonal direction along XY １ In this case, the peripheral portion 31 side of the diaphragm 30A (two corner portions 31b １ and 31b ２ Each corner side) from the inside (the other diagonal line Ld ２ The diaphragm 30A includes a plurality of circular through-holes 41 arranged in a non-uniform arrangement with the density increasing toward the diagonal line Ld. １ , Ld ２ The other diagonal line Ld ２ The other diagonal direction XY ２ are uniformly arranged in

[0103] The opening pattern of the diaphragm 30A shown in this modified example 1-9 can also break symmetry, so that the same effect as in the first embodiment can be obtained.

[0104] Although not shown, the opening pattern of the diaphragm 30A shown in FIG. 7A is rotated by 90 degrees, and the direction in which the circular through holes 41 are unevenly arranged is the diagonal direction XY. １ From the diagonal direction XY ２ Even with the opening pattern replaced with the above, the same effects as those of the first embodiment can be obtained.

[0105] <Modification 1-10> FIG. 7B is a diagram according to Modification 1-10 of the first embodiment, and is a plan view schematically showing an opening pattern of the diaphragm.

[0106] In this modification 1-10, the direction in which the elongated through holes 42 are unevenly arranged in the above-described modification 1-1 (see FIG. 6A) is changed from the X direction to the diagonal XY direction of the diaphragm 30A. １ It has been replaced with.

[0107] Specifically, as shown in FIG. 7B, the opening pattern of the diaphragm 30A of this modification 1-10 is such that the openings are spaced apart along two diagonal lines Ld １ , Ld ２ One of the diagonals Ld １ Diagonal direction along XY １ In this case, the peripheral portion 31 side of the diaphragm 30A (two corner portions 31b １ and 31b ２ Each corner side) from the inside (the other diagonal line Ld ２ The diaphragm 30A includes a plurality of elongated through-holes 42 arranged in a non-uniform arrangement with the density increasing toward the diagonal line Ld. １ , Ld ２ The other diagonal line Ld ２ The other diagonal direction XY ２ The plurality of through holes 42 each have a different length in the longitudinal direction in accordance with the planar shape of the diaphragm 30A.

[0108] The opening pattern of the diaphragm 30A shown in this modified example 1-10 can also break symmetry, so that the same effect as in the first embodiment can be obtained.

[0109] Although not shown, the opening pattern of the diaphragm 30A shown in FIG. 7B may be rotated by 90 degrees to change the direction in which the elongated through-holes 42 are arranged unevenly to the diagonal directions X and Y. １ From the diagonal direction XY ２ Even with the opening pattern replaced with the above, the same effects as those of the first embodiment can be obtained.

[0110] <Modification 1-11> FIG. 7C is a diagram according to Modification 1-11 of the first embodiment, and is a plan view schematically showing an opening pattern of the diaphragm.

[0111] In this modification 1-11, the direction in which the elongated through holes 42 are unevenly arranged in the above-described modification 1-2 (see FIG. 6B) is changed from the X direction to the diagonal XY direction of the diaphragm 30A. １ It has been replaced with.

[0112] Specifically, as shown in FIG. 7C, the opening pattern of the diaphragm 30A of this modification 1-11 is such that the openings are spaced apart from each other along two diagonal lines Ld １ , Ld ２ One of the diagonals Ld １ Diagonal direction along XY １ In this case, the peripheral portion 31 side of the diaphragm 30A (two corner portions 31b １ and 31b ２ Each corner side) from the inside (the other diagonal line Ld ２ The diaphragm 30A includes a plurality of elongated through-holes 42 arranged in two rows in a non-uniform arrangement in which the density increases toward the diagonal line Ld. １ , Ld ２ The other diagonal line Ld ２ The other diagonal direction XY ２ The plurality of through holes 42 each have a different length in the longitudinal direction in accordance with the planar shape of the diaphragm 30A.

[0113] The opening pattern of the diaphragm 30A shown in this modified example 1-11 can also break symmetry, so that the same effect as in the first embodiment can be obtained.

[0114] Although not shown, the opening pattern of the diaphragm 30A shown in FIG. 7C may be rotated by 90 degrees to change the direction in which the elongated through-holes 42 are arranged unevenly to the diagonal directions X and Y. １ From the diagonal direction XY ２ Even with the opening pattern replaced with the above, the same effects as those of the first embodiment can be obtained.

[0115] <Modification 1-12> FIG. 7D is a diagram according to Modification 1-12 of the first embodiment, and is a plan view schematically showing an opening pattern of the diaphragm.

[0116] In this modification 1-12, the direction in which the elongated through holes 42 are unevenly arranged in the above-described modification 1-3 (see FIG. 6C) is changed from the X direction to the diagonal XY direction of the diaphragm 30A. １ It has been replaced with.

[0117] Specifically, as shown in FIG. 7D, the opening pattern of the diaphragm 30A of this modification 1-12 is such that the openings are spaced apart from each other along two diagonal lines Ld １ , Ld ２ One of the diagonals Ld １ Diagonal direction along XY １ In this case, the peripheral portion 31 side of the diaphragm 30A (two corner portions 31b １ and 31b ２ From the inside (diagonal line Ld ２ The diaphragm 30A includes a plurality of elongated through-holes 42 arranged in three rows in a non-uniform arrangement in which the density increases toward the diagonal line Ld. １ , Ld ２ The other diagonal line Ld ２ The other diagonal direction XY ２ The plurality of through holes 42 also have different longitudinal lengths in accordance with the planar shape of the diaphragm 30A.

[0118] The opening pattern of the diaphragm 30A shown in this modified example 1-12 can also break symmetry, so that the same effect as in the first embodiment can be obtained.

[0119] Although not shown, the opening pattern of the diaphragm 30A shown in FIG. 7D is rotated by 90 degrees, and the direction in which the elongated through holes 42 are unevenly arranged is the diagonal direction XY. １ From the diagonal direction XY ２ Even with the opening pattern replaced with the above, the same effects as those of the first embodiment can be obtained.

[0120] <Modification 1-13> FIG. 7E is a diagram according to Modification 1-13 of the first embodiment, and is a plan view schematically showing an opening pattern of the diaphragm.

[0121] In this modification 1-13, the direction in which the slits 43 are arranged unevenly in the above modification 1-4 (see FIG. 6D) is changed from the X direction to the diagonal XY direction of the diaphragm 30A. １ It has been replaced with.

[0122] Specifically, as shown in FIG. 7E, the opening pattern of the diaphragm 30A of this modification 1-13 is such that the openings are spaced apart from each other along two diagonal lines Ld １ , Ld ２ One of the diagonals Ld １ Diagonal direction along XY １ In this case, the peripheral portion 31 side of the diaphragm 30A (two corner portions 31b １ and 31b ２ The slits 43 are arranged in two rows in an uneven arrangement in which the density increases from the corners of the diaphragm 30A toward the inside. Each of the slits 43 is aligned along two diagonal lines Ld of the diaphragm 30A in a plan view. １ , Ld ２ The other diagonal line Ld ２ The other diagonal direction XY ２ The longitudinal lengths of the plurality of slits 43 also vary in accordance with the planar shape of the diaphragm 30A.

[0123] The opening pattern of the diaphragm 30A shown in this modified example 1-13 can also break symmetry, so that the same effect as in the first embodiment can be obtained.

[0124] Although not shown, the opening pattern of the diaphragm 30A shown in FIG. 7E is rotated by 90 degrees, and the direction in which the slits 43 are arranged unevenly is the diagonal direction XY. １ From the diagonal direction XY ２ Even with the opening pattern replaced with the above, the same effects as those of the first embodiment can be obtained.

[0125] <Modification 1-14> FIG. 7F is a diagram according to Modification 1-14 of the first embodiment, and is a plan view schematically showing an opening pattern of the diaphragm.

[0126] As shown in FIG. 7F, in this modified example 1-14, the direction in which the slits 43 are unevenly arranged in the above-described modified example 1-4 (see FIG. 6E) is changed from the X direction to the diagonal XY direction of the diaphragm 30A. １ It has been replaced with.

[0127] The opening pattern of the diaphragm 30A shown in this modified example 1-14 can also break symmetry, so that the same effect as in the first embodiment can be obtained.

[0128] Although not shown, the opening pattern of the diaphragm 30A shown in FIG. 7F may be rotated by 90 degrees to change the direction in which the elongated through holes 42 and slits 43 are arranged unevenly to the diagonal directions X and Y. １ From the diagonal direction XY ２ Even with the opening pattern replaced with the above, the same effects as those of the first embodiment can be obtained.

[0129] <Modification 1-15> FIG. 7G is a diagram according to Modification 1-15 of the first embodiment, and is a plan view schematically showing an opening pattern of the diaphragm.

[0130] As shown in FIG. 7G, in this modified example 1-15, the direction in which the through holes 41 and the slits 43 are unevenly arranged in the above-described modified example 1-6 (see FIG. 6F) is changed from the X direction to the diagonal XY direction of the diaphragm 30A. １ It has been replaced with.

[0131] The opening pattern of the diaphragm 30A shown in this modified example 1-15 can also break symmetry, so that the same effect as in the first embodiment can be obtained.

[0132] Although not shown, the opening pattern of the diaphragm 30A shown in FIG. 7G is rotated by 90 degrees, and the direction in which the circular through-holes 41 and the elongated through-holes 42 are unevenly arranged is the diagonal direction XY. １ From the diagonal direction XY ２ Even with the opening pattern replaced with the above, the same effects as those of the first embodiment can be obtained.

[0133] <Modification 1-16> FIG. 7H is a diagram according to Modification 1-16 of the first embodiment, and is a plan view schematically showing an opening pattern of the diaphragm.

[0134] As shown in FIG. 7H, in this modified example 1-15, the direction in which the through holes 41 and the slits 43 are unevenly arranged in the above-described modified example 1-6 (see FIG. 6G) is changed from the X direction to the diagonal XY direction of the diaphragm 30A. １ It has been replaced with.

[0135] The opening pattern of the diaphragm 30A shown in this modified example 1-16 can also break symmetry, so that the same effect as in the first embodiment can be obtained.

[0136] Although not shown, the opening pattern of the diaphragm 30A shown in FIG. 7H is rotated by 90 degrees, and the direction in which the circular through-holes 41 and the elongated through-holes 42 are unevenly arranged is the diagonal direction XY. １ From the diagonal direction XY ２ Even with the opening pattern replaced with the above, the same effects as those of the first embodiment can be obtained.

[0137] <Modification 1-17> FIG. 7I is a diagram according to Modification 1-17 of the first embodiment, and is a plan view schematically showing an opening pattern of the diaphragm.

[0138] As shown in FIG. 7I, in this modified example 1-17, the direction in which the through holes 41 and the slits 43 are unevenly arranged in the above-described modified example 1-6 (see FIG. 6H) is changed from the X direction to the diagonal XY direction of the diaphragm 30A. １ The opening pattern of the diaphragm 30A shown in this modified example 1-17 can also break the symmetry, and the same effect as in the first embodiment can be obtained.

[0139] Although not shown, the opening pattern of the diaphragm 30A shown in FIG. 7I is rotated by 90 degrees, and the direction in which the circular through holes 41 and the slits 43 are unevenly arranged is the diagonal direction XY. １ From the diagonal direction XY ２ Even with the opening pattern replaced with the above, the same effects as those of the first embodiment can be obtained.

[0140] <Variation 1-18> Although not shown, a configuration may be adopted in which the symmetry of the opening pattern of the diaphragm 30A is broken by providing a hole (recess) that does not penetrate the diaphragm 30A separately from the through-hole 41. In this case, the opening pattern of the diaphragm 30A includes the through-hole 41 and a hole that is shallower in depth in the Z direction than the through-hole 41.

[0141] Second Embodiment In this second embodiment, a case will be described in which a cutout portion is provided in the diaphragm to break the symmetry of the opening pattern of the diaphragm. Fig. 8 is a plan view schematically showing a schematic configuration of a sensor according to a second embodiment of the present technology. Fig. 9 is a longitudinal sectional view schematically showing a longitudinal sectional structure taken along the a8-a8 cutting line in Fig. 8. Fig. 10 is a plan view selectively showing the diaphragm and beam portion in Fig. 8.

[0142] As shown in FIG. 8, a sensor 1B according to the second embodiment of the present technology has basically the same configuration as the sensor 1A shown in FIG. 1 of the first embodiment described above, but differs in the following configuration.

[0143] That is, the sensor 1B of the second embodiment includes a diaphragm 30B instead of the diaphragm 30A of the first embodiment shown in Fig. 1. The diaphragm 30B includes, as an opening 40, a through-hole 41 having a circular planar shape in a plan view and a notch 44 that cuts inward from the peripheral edge 31 of the diaphragm 30B in a plan view. The other configurations are generally similar to those of the diaphragm 30A of the first embodiment.

[0144] 8 and 9, unlike the through holes 41 of the first embodiment, the circular through holes 41 of the second embodiment are arranged uniformly at equal intervals in both the X and Y directions. Similarly to the through holes 41 of the first embodiment, each of the plurality of through holes 41 of the second embodiment penetrates through the light absorbing film 32 and the insulating film 25b of the diaphragm 30B in the thickness direction (Z direction) of the diaphragm 30B.

[0145] As shown in FIGS. 8 and 9, the notch 44 is formed between two side portions 31a of the diaphragm 30B that are located on opposite sides of the diaphragm 30B in a plan view. ３ and 31a ４ The cutout portions 44 have a semicircular shape in a plan view, and extend across two surfaces (upper and lower surfaces) of the diaphragm 30B that are opposite each other in the thickness direction (Z direction) of the diaphragm 30B.

[0146] As shown in FIG. 10, the notch 44 is formed between the two side portions 31a of the diaphragm 30B in a plan view. ３ and 31a ４ A center line L crossing each of the middle parts of １ The notch 44 is provided near the connection where the beam portion 50 is connected to the diaphragm 30B. ３ and 31a ４ On each side of the diaphragm 30B, a notch 44 is disposed between two connecting portions where the two beam portions 50 are connected to the diaphragm 30B.

[0147] In the diaphragm 30B of the second embodiment, a plurality of through holes 41 are uniformly arranged at equal intervals in both the X direction and the Y direction. ３ and 31a ４Since the notches 44 are provided on each side of the diaphragm 30B, stress can be alleviated in a specific direction, and the symmetry of the opening pattern in the diaphragm 30B can be broken. This makes it possible to control the warping direction of the diaphragm 30B, unlike conventional cases in which the opening pattern in the diaphragm 30B is symmetrical in the vertical and horizontal directions. Therefore, in the sensor 1B according to the second embodiment, structural damage caused by warping of the diaphragm 30B can also be suppressed.

[0148] Furthermore, by connecting the beam portion 50 to the vicinity of the area where the warp of the diaphragm 30B is maximum or minimum, it is possible to prevent structural damage even when the diaphragm 30B is warped.

[0149] Furthermore, stress caused by warping of the diaphragm 30B tends to concentrate near the connecting portions where the diaphragm 30B is connected to the beam portions 50. Therefore, as in the second embodiment, by providing the cutout portions 44 near the connecting portions where the diaphragm 30B is connected to the beam portions 50 and adopting an arrangement pattern that increases the density of the openings 40, structural damage caused by warping of the diaphragm 30B can be further suppressed.

[0150] The plurality of through holes 41 are gas supply holes for supplying etching gas when etching the sacrificial film to form the cavity 70. In order to form the cavity 70 uniformly, it is useful to uniformly arrange the plurality of through holes 41.

[0151] Therefore, in this second embodiment, the symmetry of the opening pattern is broken by the arrangement of the cutout portions 44 while the multiple through holes 41 are uniformly arranged, so that the warping direction of the diaphragm 30A can be controlled while ensuring the uniformity of the cavity portion 70.

[0152] Although not shown, the opening pattern shown in FIG. 10 can be rotated by 90 degrees to form two side portions 31a located on opposite sides of the diaphragm 30B in a plan view. ３ and 31a ４ Even in an opening pattern in which one notch 44 is provided on each side of the opening, the same effect as in the second embodiment can be obtained.

[0153] <Modifications of Second Embodiment> <Modification 2-1> FIG. 11A is a diagram according to Modification 2-1 of the second embodiment, and is a plan view schematically showing an opening pattern of a diaphragm.

[0154] As shown in FIG. 11A, in this modification 2-1, two side portions 31a located on opposite sides of a diaphragm 30B in a plan view are ３ and 31a ４ On each side of the side 31a ３ , 31a ４ In this modified example 2-1, for example, three notches 44 are provided. Of the three notches 44, the notch 44 located in the middle is aligned with the center line L of the diaphragm 30A in a plan view. １ The arrangement pattern of the through holes 41 is the same as the arrangement pattern of the through holes 41 shown in the second embodiment.

[0155] The cutout portions 44 and through holes 41 shown in this modified example 2-1 are also included in the opening pattern of the diaphragm 30B. In addition, since the symmetry can be broken in the opening pattern of the diaphragm 30B shown in this modified example 2-1, the same effect as in the second embodiment described above can be obtained.

[0156] 11A is rotated by 90 degrees, the two side portions 31a located on opposite sides of the diaphragm 30B in a plan view are １ and 31a ２ Even in an opening pattern in which three notches 44 are provided on each side of the opening, the same effect as in the second embodiment can be obtained.

[0157] <Modification 2-2> FIG. 11B is a diagram according to Modification 2-2 of the second embodiment, and is a plan view schematically showing an opening pattern of the diaphragm.

[0158] 11B, in this modification 2-2, of the three cutout portions 44 shown in the above-described modification 2-2, the cutout amount of the middle cutout portion 44 is larger than the cutout amounts of the other two cutout portions 44. The arrangement pattern of the through holes 41 is the same as the arrangement pattern of the through holes 41 shown in the above-described modification 2-1.

[0159] The cutout portions 44 and through holes 41 shown in this modified example 2-2 are also included in the opening pattern of the diaphragm 30B. In addition, since the symmetry can be broken in the opening pattern of the diaphragm 30B shown in this modified example 2-2, the same effect as in the second embodiment described above can be obtained.

[0160] 11B is rotated by 90 degrees, the two side portions 31a located on opposite sides of the diaphragm 30B in a plan view are １ and 31a ２ Even in an opening pattern in which three notches 44 are provided on each side of the opening, the same effect as in the second embodiment can be obtained.

[0161] <Modification 2-3> FIG. 12A is a diagram according to Modification 2-3 of the second embodiment, and is a plan view schematically showing an opening pattern of a diaphragm.

[0162] As shown in FIG. 12A, in this modification 2-3, two corners 31b located on opposite sides of the diaphragm 30B in a plan view are ３ and 31b ４ In this modification 2-3, the two corners 31b of the diaphragm 30B are provided with a notch 44 at each corner. ３ and 31b ４ Two beams 50 are connected to each corner of the frame.

[0163] Each of the two notches 44 is located on the diagonal line Ld of the diaphragm 30B in a plan view. ２ The corner 31b of the diaphragm 30 is located above the ３ Of the two beams 50 (50a, 50b) located on the side, one beam 50a is connected to the side 31a of the diaphragm 30B. ３The other beam portion 50b is connected to the side 31a of the diaphragm. ２ The corner 31b of the diaphragm 30 is connected to the diaphragm 30B. ４ Of the two beams 50 (50c, 50d) located on the side, one beam 50c is connected to the side 31a of the diaphragm 30B. １ The other beam portion 50d is connected to the side portion 31a of the diaphragm. ４ The diaphragm 30B is connected to the diaphragm 30B on the side.

[0164] The cutout portions 44 and through holes 41 shown in this modified example 2-3 are also included in the opening pattern of the diaphragm 30B. In addition, since the symmetry can be broken in the opening pattern of the diaphragm 30B shown in this modified example 2-3, the same effect as in the second embodiment described above can be obtained.

[0165] 12A is rotated by 90 degrees, the two corners 31b located on opposite sides of the diaphragm 30B in a plan view are １ and 31b ２ Even in an opening pattern in which one notch 44 is provided on each corner side of the opening, the same effect as in the second embodiment can be obtained.

[0166] <Modification 2-4> FIG. 12B is a diagram according to Modification 2-4 of the second embodiment, and is a plan view schematically showing an opening pattern of the diaphragm.

[0167] As shown in FIG. 12B, in this modification 2-4, two corners 31b located on opposite sides of the diaphragm 30B in a plan view are ３ and 31b ４ At each corner of the hole 41, a plurality of notches 44 are provided. In this modified example 2-4, for example, three notches 44 are provided.

[0168] Corner portion 31b of diaphragm 30 ３ Of the three notches 44 located on the side, the first notch 44 is aligned with the diagonal line Ld of the diaphragm 30B in a plan view. ２ The second cutout 44 is disposed at a position overlapping the side 31a of the diaphragm 30B in a plan view.２ The third notch 44 is disposed on the side of the diaphragm 30B in a plan view. ３ is placed to the side.

[0169] In addition, the corner 31b of the diaphragm 30 ４ Of the three notches 44 located on the side, the first notch 44 is aligned with the diagonal line Ld of the diaphragm 30B in a plan view. ２ The second cutout 44 is disposed at a position overlapping the side 31a of the diaphragm 30B in a plan view. １ The third notch 44 is disposed on the side of the diaphragm 30B in a plan view. ４ is placed to the side.

[0170] The cutout portions 44 and through holes 41 shown in this modified example 2-4 are also included in the opening pattern of the diaphragm 30B. In addition, since the symmetry can be broken in the opening pattern of the diaphragm 30B shown in this modified example 2-4, the same effect as in the second embodiment described above can be obtained.

[0171] 12B is rotated by 90 degrees, the two corners 31b located on opposite sides of the diaphragm 30B in a plan view are １ and 31b ２ Even in an opening pattern in which three notches 44 are provided on each corner side, the same effect as in the second embodiment can be obtained.

[0172] <Modification 2-5> FIG. 13A is a diagram according to Modification 2-5 of the second embodiment, and is a plan view schematically showing an opening pattern of a diaphragm.

[0173] As shown in FIG. 13A, in this modification 2-5, the two side portions 31a of the diaphragm 30B ３ and 31a ４ The two notches 44 provided on each side of the diaphragm 30B are aligned with the center line L of the diaphragm 30B in a plan view. １ A virtual line L that intersects diagonally with ２ That is, the two side portions 31a located on the opposite sides of the diaphragm 30B are ３ and 31a ４The two notches 44 are individually provided on each side of the side 31a. ３ The notch 44 located on the side is aligned with the center line L of the diaphragm 30B. １ Side portion 31a １ The other side 31a is offset to the ４ The notch 44 located on the side is aligned with the center line L of the diaphragm 30B. １ Side portion 31a ２ It is offset to the side.

[0174] The virtual line L of this modified example 2-5 ２ is the center line L １ The angle of inclination in the counterclockwise direction from the center line L ２ Intersects with.

[0175] The cutout portions 44 and through holes 41 shown in this modified example 2-5 are also included in the opening pattern of the diaphragm 30B. In addition, since the symmetry can be broken in the opening pattern of the diaphragm 30B shown in this modified example 2-5, the same effect as in the second embodiment described above can be obtained.

[0176] 13A is rotated by 90 degrees, the two side portions 31a located on opposite sides of the diaphragm 30B in a plan view are １ and 31a ２ In an opening pattern in which one notch 44 is provided on each side in an offset state similar to the above-described modified example 2-5, the same effect as in the above-described second embodiment can be obtained.

[0177] <Modification 2-6> FIG. 13B is a diagram according to Modification 2-6 of the second embodiment, and is a plan view schematically showing an opening pattern of the diaphragm.

[0178] As shown in FIG. 13B, in this modified example 2-6, the offset direction of the notch 44 shown in the above modified example 2-5 is reversed.

[0179] That is, two side portions 31a located on opposite sides of the diaphragm 30B ３ and 31a ４ The two notches 44 are individually provided on each side of the side 31a. ３The notch 44 located on the side is aligned with the center line L of the diaphragm 30B. １ Side portion 31a ２ The other side 31a is offset to the ４ The notch 44 located on the side is aligned with the center line L of the diaphragm 30B. １ Side portion 31a １ It is offset to the side.

[0180] The two notches 44 are aligned with the center line L of the diaphragm 30B in a plan view. １ A virtual line L that intersects diagonally with ３ The virtual line L ３ is the center line L １ The angle of inclination in the clockwise direction from the center line L １ Intersects with.

[0181] The cutout portions 44 and through holes 41 shown in this modified example 2-6 are also included in the opening pattern of the diaphragm 30B. In addition, since the symmetry can be broken in the opening pattern of the diaphragm 30B shown in this modified example 2-6, the same effect as in the second embodiment described above can be obtained.

[0182] 13B is rotated by 90 degrees, the two side portions 31a located on opposite sides of the diaphragm 30B in a plan view are １ and 31a ２ In an opening pattern in which one notch 44 is provided on each side in an offset state similar to that of the above-described modified example 2-6, the same effect as in the above-described second embodiment can be obtained.

[0183] <Modification 2-7> FIG. 13C is a diagram according to Modification 2-7 of the second embodiment, and is a plan view schematically showing an opening pattern of the diaphragm.

[0184] As shown in FIG. 13C, in this modified example 2-7, the two notches 44 shown in FIG. 10 of the second embodiment are aligned with the center line L of the diaphragm 30B. １ Side portion 31a ２ In this modified example 2-7, the center line L of the diaphragm 30B is offset to the side. １ Side portion 31b２ Center line L on the side １ An imaginary line L extending parallel to ４ Two notches 44 are located on top.

[0185] The cutout portions 44 and through holes 41 shown in this modified example 2-7 are also included in the opening pattern of the diaphragm 30B. In addition, since the symmetry can be broken in the opening pattern of the diaphragm 30B shown in this modified example 2-7, the same effect as in the second embodiment described above can be obtained.

[0186] 13C is rotated by 90 degrees, the two side portions 31a located on opposite sides of the diaphragm 30B in a plan view are １ and 31a ２ Even in an opening pattern in which one notch 44 is provided on each side in the same arrangement as in the above-described modified example 2-7, the same effect as in the above-described second embodiment can be obtained.

[0187] <Modification 2-8> FIG. 13D is a diagram according to Modification 2-8 of the second embodiment, and is a plan view schematically showing an opening pattern of the diaphragm.

[0188] As shown in FIG. 13D, in this modified example 2-7, the two notches 44 shown in FIG. 10 of the second embodiment are aligned with the center line L of the diaphragm 30B. １ Side portion 31a １ In this modified example 2-8, the center line L of the diaphragm 30B is offset to the side in a plan view. １ Side portion 31a １ Center line L on the side １ An imaginary line L extending parallel to ５ Two notches 44 are located on top.

[0189] The cutout portions 44 and through holes 41 shown in this modified example 2-8 are also included in the opening pattern of the diaphragm 30B. In addition, since the opening pattern of the diaphragm 30B shown in this modified example 2-7 also has a broken symmetry, the same effect as in the second embodiment described above can be obtained.

[0190] 13D is rotated by 90 degrees, the two side portions 31a located on opposite sides of the diaphragm 30B in a plan view are １ and 31a ２ Even in an opening pattern in which one notch 44 is provided on each side in the same arrangement as in the above-described modified example 2-8, the same effect as in the above-described second embodiment can be obtained.

[0191] <Modification 2-9> FIG. 14A is a diagram according to Modification 2-9 of the second embodiment, and is a plan view schematically showing an opening pattern of a diaphragm.

[0192] As shown in FIG. 14A, in this modified example 2-9, the two notches 44 shown in FIG. 12A of the above modified example 2-3 are aligned along the diagonal line Ld ２ In this modified example 2-9, the diagonal line Ld of the diaphragm 30B in plan view is offset from the ２ A virtual line L that intersects diagonally with ６ Two notches 44 are arranged on the top. ６ is the diagonal Ld ２ The angle of inclination in the counterclockwise direction from the diagonal Ld ２ Intersects with.

[0193] The cutout portions 44 and through holes 41 shown in this modified example 2-9 are also included in the opening pattern of the diaphragm 30B. In addition, since the symmetry can be broken in the opening pattern of the diaphragm 30B shown in this modified example 2-9, the same effect as in the second embodiment described above can be obtained.

[0194] 14A is rotated by 90 degrees, the two corners 31b located on opposite sides of the diaphragm 30B in a plan view are １ and 31b ２ In an opening pattern in which one notch 44 is provided at each corner in an offset state similar to that of the above-described modified example 2-9, the same effect as in the above-described second embodiment can be obtained.

[0195] <Modification 2-10> FIG. 14B is a diagram according to Modification 2-10 of the second embodiment, and is a plan view schematically showing an opening pattern of the diaphragm.

[0196] As shown in FIG. 14B, in this modified example 2-10, the offset direction of the notch 44 shown in the above modified example 2-9 is reversed.

[0197] That is, in this modified example 2-10, the two notches 44 located on opposite sides of the diaphragm 30B are aligned along the diagonal line Ld of the diaphragm 30B in a plan view. ２ The angle of inclination in the clockwise direction from the diagonal Ld ２ The imaginary line L intersecting with ７ is placed above.

[0198] The cutout portions 44 and through holes 41 shown in this modified example 2-10 are also included in the opening pattern of the diaphragm 30B. In addition, since the symmetry can be broken in the opening pattern of the diaphragm 30B shown in this modified example 2-10, the same effect as in the second embodiment described above can be obtained.

[0199] 14B is rotated by 90 degrees, the two corners 31b located on opposite sides of the diaphragm 30B in a plan view are １ and 31b ２ Even in an opening pattern in which one notch 44 is provided on each corner side in the same arrangement as in the above-described modified example 2-10, the same effect as in the above-described second embodiment can be obtained.

[0200] <Variation 2-11> Although not shown, a configuration may be adopted in which a hole (recess) that does not penetrate the diaphragm 30B is provided separately from the through-hole 41, and the symmetry of the opening pattern of the diaphragm 30B is broken by this recess and the cutout portion 44. In this case, the opening pattern of the diaphragm 30B includes the through-hole 41, a hole (recess) that is shallower in the Z direction than the through-hole 41, and the cutout portion 44.

[0201] 15A is a longitudinal cross-sectional view schematically showing a longitudinal cross-sectional structure of a sensor according to a third embodiment of the present technology, and FIG. 15B is a longitudinal cross-sectional view schematically showing the longitudinal cross-sectional structure along the a15-a15 cutting line in FIG. 15A.

[0202] 15A and 15B, a sensor 1C according to a third embodiment of the present technology has a configuration basically similar to that of the sensor 1B according to the second embodiment described above, but differs in the configuration of the diaphragm 30B. That is, as shown in FIG. 15B, the diaphragm 30B according to the third embodiment has an opening 25b provided in an insulating film 25b. １ The back surface of the light absorbing film 32, opposite to the light receiving surface side, is exposed through the through hole 41. In this third embodiment, the through holes 41 penetrate only the light absorbing film 32 of the diaphragm 30B in the thickness direction (Z direction) of the light absorbing film 32. That is, in this third embodiment, the light absorbing film 32 occupies most of the area of ​​the diaphragm 30B.

[0203] The present technology can also be applied to the sensor 1C of the third embodiment, and the same effects as those of the first embodiment described above can be obtained.

[0204] Furthermore, in this third embodiment, the light absorbing film 32 occupies most of the area of ​​the diaphragm 30B, so the heat capacity of the light receiving section is smaller than in the structure shown in FIG. 2 above, and the response speed can be improved.

[0205] The configurations relating to the insulating film 25b and the light absorbing film 32 of the third embodiment can also be applied to the diaphragm 30A of the first embodiment described above.

[0206] 16 is a longitudinal cross-sectional view schematically illustrating a longitudinal cross-sectional structure of a sensor according to a third embodiment of the present disclosure, taken along the same line as a15-a15 in FIG.

[0207] 16 , a sensor 1D according to a fourth embodiment of the present technology has a configuration basically similar to that of the sensor 1C according to the third embodiment described above, but differs in the configuration of the beam portion 50. That is, as shown in FIG. 16 , in this fourth embodiment, the beam portion 50 is formed of a temperature detection element 60. In other words, the temperature detection element 60 also serves as the beam portion 50.

[0208] The present technology can also be applied to the sensor 1D of the fourth embodiment, and the same effects as those of the first embodiment described above can be obtained.

[0209] Furthermore, in the case of a thermopile sensor, forming the beam portion from a single thermoelectric exchange material rather than using a material that does not contribute to thermoelectric exchange in the beam portion increases the thermoelectric exchange efficiency and improves the sensitivity or signal-to-noise ratio of the sensor.

[0210] The configuration of the beam portion 50 of the fourth embodiment can also be applied to the beam portion 50 of the first embodiment described above.

[0211] 17 is a longitudinal cross-sectional view schematically illustrating a longitudinal cross-sectional structure of a sensor according to a fifth embodiment of the present disclosure, taken along the same line as a15-a15 in FIG.

[0212] As shown in FIG. 17 , a sensor 1E according to a fifth embodiment of the present technology has a configuration basically similar to that of the sensor 1D according to the above-described fourth embodiment, but differs in the configuration of the base member.

[0213] 17, a sensor 1E according to a fifth embodiment of the present technology includes a base body 80 as a base member instead of the circuit board 10 of the fourth embodiment shown in Fig. 16. In the fifth embodiment, the base body 80 corresponds to a specific example of "base member" of the present technology.

[0214] As shown in Figure 17, the base 80 comprises a circuit board 81 and a multilayer wiring layer 82 provided on the first surface 81a side of a first surface 81a and a second surface 81b located on opposite sides of the thickness direction (Z direction) of the circuit board 81.

[0215] In the fifth embodiment, the components of the sensor 1E, namely, the reflector 11, the frame 20, the diaphragm 30B, the beam 50 (temperature detection element 60), and the cavity 70, are provided on the side of the multilayer wiring layer 82 opposite to the circuit board 81. These components (the reflector 11, the frame 20, the diaphragm 30B, the beam 50 (temperature detection element 60), and the cavity 70) are directly stacked on the base 80.

[0216] In the multilayer wiring layer 82, wiring 84 and contact vias 85 are provided in an interlayer insulating film 83. The interlayer insulating film 83 is made of, for example, a silicon oxide film. The wiring 84 and contact vias 85 are made of, for example, a metal material such as copper (Cu).

[0217] The temperature detection element 60 of this fifth embodiment is electrically connected to a readout circuit (not shown) provided on the base 80 via the wiring 22 and contact via 85 of the frame portion 20, and the wiring 84 and contact via 85 of the multilayer wiring layer 82.

[0218] The present technology can also be applied to the sensor 1E of the fifth embodiment, and the same effects as those of the first embodiment described above can be obtained.

[0219] The base 80 of the fourth embodiment can also be applied to the sensor 1A of the first embodiment described above.

[0220] 18 is a longitudinal cross-sectional view schematically illustrating a longitudinal cross-sectional structure of a sensor according to a sixth embodiment of the present disclosure, taken along the same line as a15-a15 in FIG.

[0221] <Configuration of Sensor> As shown in FIG. 18 , a sensor 1F according to the sixth embodiment of the present technology has basically the same configuration as the sensor 1E according to the fifth embodiment described above, but differs in the following configuration.

[0222] 18 , the sensor 1F of the sixth embodiment further includes an etching stop film 86 provided on the multilayer wiring layer 82 side of the base 80. In the sixth embodiment, the components of the sensor 1F, namely, the reflector 11, the frame 20, the diaphragm 30B, the beam 50 (temperature detection element 60), and the cavity 70, are provided on the side opposite the base 80 side (the multilayer wiring layer 82 side) of the etching stop film 86.

[0223] A contact via 87 is provided in the etching stop film 86. The etching stop film 86 is made of, for example, a silicon carbonitride (SiCN) film. The contact via 87 is made of a metal material such as tungsten (W). The contact via 87 electrically connects the wiring 22 provided in the insulating film 21 and the wiring 84 provided in the multilayer wiring layer 82.

[0224] In this sixth embodiment, the temperature detection element 60 and a readout circuit (not shown) provided on the base 80 are electrically connected via wiring 22 and contact via 85 of the frame portion 20, contact via 87 in the etching stop film 86, and wiring 84 and contact via 85 of the multilayer wiring layer 82.

[0225] 19A to 19E, an example of a method for manufacturing the sensor according to the sixth embodiment will be described. Here, a process for sequentially forming the temperature detection element 60 and the diaphragm 30B on a base 80 provided with a readout circuit will be described.

[0226] First, a substrate 80 shown in Fig. 19A is prepared. Although not shown, a readout circuit has already been formed on this substrate 80.

[0227] 19B , an etching stop film 86, a contact via 87, wiring 22, and a reflector 11 are formed on the multilayer wiring layer 82 side of the base 80. The contact via 87 can be formed by forming an etching stop film 86 on the multilayer wiring layer 82 of the base 80, then forming a contact hole in the etching stop film 86 using, for example, well-known photolithography and dry etching techniques, and then selectively filling the contact hole with a metal film. The wiring 22 and the reflector 11 can be formed by forming a metal film on the etching stop film 86 using, for example, a CVD (Chemical Vapor Deposition) method, and then patterning the metal film using, for example, well-known photolithography and dry etching techniques.

[0228] 19C , an insulating film 21 and a contact via 23 are formed as a sacrificial film, and a temperature detection element 60 that also serves as the beam portion 50 is formed. The contact via 23 can be formed by forming the insulating film 21 on the etching stop film 86 so as to cover the wiring 22 and the reflector 11, then planarizing the surface of the insulating film 21 by, for example, CMP (Chemical Mechanical Polishing), then forming a contact hole in the insulating film 21 by, for example, well-known photolithography and dry etching techniques, and then selectively filling the contact hole with a metal film.

[0229] The temperature detection element 60, which also serves as the beam portion 50, can be formed by depositing a thermoelectric conversion material film on the insulating film 21 and then patterning this thermoelectric conversion material film into a predetermined shape using, for example, well-known photolithography and dry etching techniques.

[0230] Next, as shown in FIG. 19D , a diaphragm 30B is formed on the insulating film 21. Specifically, first, an insulating film is formed on the insulating film 21 by, for example, CVD so as to cover the temperature detection element 60 (beam portion 50). This insulating film is then patterned by, for example, well-known photolithography and dry etching techniques to form insulating films 25a and 25b. Next, a light-absorbing film 32 is formed on the insulating film 21 by, for example, CVD so as to cover the insulating films 21a and 21b. The light-absorbing film 32 is then etched to a predetermined planar shape, and through-holes 41 are formed as openings. This results in a diaphragm 30B including the insulating film 25b, the light-absorbing film 32, and the through-holes 41. The light-absorbing film 32 can also be formed by applying ink containing a light-absorbing material to the insulating film 21 by spin coating.

[0231] Next, the insulating film 21, which is a sacrificial film, is processed by, for example, dry etching or wet etching to form a cavity 70 between the reflector 11 and the diaphragm 30B, as shown in FIG. 19E.

[0232] In forming the cavity 70, etching conditions are selected so that the etching selectivity between the insulating film 21 and other films is sufficiently large, and the film material is selected in advance.

[0233] By this process, a frame portion 20 including insulating films 21 and 25a is formed on a substrate 80 serving as a base member, and a diaphragm 30B is formed that is supported on this frame portion 20 via a beam portion 50 and is separated from the substrate 80 in a floating state via a cavity portion 70.

[0234] <<Major Effects of Sixth Embodiment>> The present technology can be applied to the sensor 1F of this sixth embodiment, and the same effects as those of the first embodiment can be obtained. Furthermore, according to the manufacturing method of this sixth embodiment, it is possible to manufacture the sensor 1F that has excellent resistance to structural damage caused by warping of the diaphragm 30B.

[0235] The etching stop film 86 and the contact via 87 of the sixth embodiment, together with the base body 80, can also be applied to the sensor 1A of the first embodiment described above.

[0236] Seventh Embodiment Fig. 20 is a longitudinal cross-sectional view schematically illustrating a longitudinal cross-sectional structure of a sensor according to a seventh embodiment of the present disclosure, taken along the same line a15-a15 as shown in Fig. 15A.

[0237] As shown in Fig. 20 , a sensor 1G according to a seventh embodiment of the present technology has a configuration basically similar to that of the sensor 1F according to the sixth embodiment described above, with the following differences. That is, as shown in Fig. 20 , the sensor 1G according to the seventh embodiment includes a bonding film 91 and a bonding metal pad 92 between a base 80 and an etching stop film 86. In the seventh embodiment, the wiring 22 and the reflector 11 are provided in the etching stop film 86. In the seventh embodiment, a bonding metal pad 84a is provided in the uppermost wiring layer of the multilayer wiring layer 82 of the base 80. The other configurations are generally similar to those of the sixth embodiment described above.

[0238] The bonding metal pad 84 a on the base 80 side (multilayer wiring layer 82 side) is provided in the film of the uppermost interlayer insulating film 83 with its bonding surface portion exposed from the uppermost interlayer insulating film 83 of the multilayer wiring layer 82.

[0239] In the manufacturing process of the sensor 1F, the bonding film 91 is provided on the side of the etching stop film 86 opposite to the reflector 11 side. The bonding film 91 is bonded to the uppermost interlayer insulating film 83 provided on the multilayer wiring layer 82 of the base 80.

[0240] The bonding metal pad 92 is provided in the bonding film 91 with its bonding surface exposed from the bonding film 91. The bonding metal pad 92 is electrically connected to the wiring 22 through a contact via 93 that extends across the bonding film 91 and the etching stop film 86.

[0241] The bonding metal pad 92 is electrically and mechanically connected to the bonding metal pad 84a by intermetallic bonding with its bonding surface facing the bonding surface of the bonding metal pad 84a provided on the multilayer wiring layer 82 of the base 80. The intermetallic bonding between the bonding metal pad 92 and the bonding metal pad 84a establishes electrical continuity between the temperature detection element 60 and the readout circuit provided on the base 80.

[0242] 20 is manufactured by stacking a base 80 provided with a readout circuit and the like and a light detection base provided with a temperature detection element 60 and the like in its manufacturing process. Hereinafter, an example of a manufacturing method for the sensor 1G according to the seventh embodiment will be described with reference to FIGS. 21A to 21H .

[0243] 21A , an insulating film 25 and a temperature detection element 60 that also serves as the beam portion 50 are formed. Specifically, the insulating film 25 is formed on a processing substrate 95, and then the temperature detection element 60 that also serves as the beam portion 50 is formed on this insulating film 25. A silicon substrate, for example, is used as the processing substrate 95. The temperature detection element 60 can be formed by forming a thermoelectric conversion material film on the insulating film 25 and then patterning this thermoelectric conversion material film into a predetermined shape using, for example, well-known photolithography and dry etching techniques.

[0244] Next, as shown in FIG. 21B , the insulating film 21, the contact via 23, the reflector 11, the wiring 22, and the etching stop film 86 are formed. Specifically, the insulating film 21 as a sacrificial oxide film is formed on the insulating film 25 so as to cover the temperature detection element 60, and then the surface side of the insulating film 21 is planarized by CMP. Next, contact holes are formed in the insulating film 21, and then a metal material is selectively filled in the contact holes to form the contact vias 23. Next, a metal film is formed on the upper surface side of the insulating film 21 by CVD, and then this metal film is patterned to form the reflector 11 and the wiring 22. The metal film is patterned using, for example, well-known photolithography and dry etching techniques. Next, the etching stop film 86 is formed on the insulating film 21 so as to cover the reflector 11 and the wiring 22, and then the surface side of the insulating film 21 is planarized by CMP.

[0245] 21C , a bonding film 91, a contact via 93, and a bonding metal pad 92 are formed. The bonding film 91 is formed on the etching stop film 86. The bonding film 91 is, for example, a silicon oxide film. The contact via 93 and the bonding metal pad 92 are formed in the bonding film 91 by, for example, a dual damascene process. The bonding metal pad 92 is formed with its bonding surface exposed from the bonding film 91. The contact via 93 extends across the etching stop film 86 and the bonding film 91, and is electrically and mechanically connected to each of the bonding metal pad 92 and the wiring 22. This process forms a photodetector substrate 96 including the temperature detection element 60, the bonding film 91, the bonding metal pad 92, and the like.

[0246] Next, a base 80 shown in FIG. 21D is formed. The base 80 includes a circuit board 81 and a multilayer wiring layer 82 provided on a first surface 81a of the circuit board 81. A readout circuit is already provided on the base 80. The multilayer wiring layer 82 includes an interlayer insulating film 83, a bonding metal pad 84a, and a contact via 85. The bonding metal pad 84a is formed in the uppermost wiring layer of the multilayer wiring layer 82, and its bonding surface is exposed from the uppermost interlayer insulating film 83 of the multilayer wiring layer 82. The bonding metal pad 84a is electrically connected to the readout circuit of the base 80 via the wiring 84 and the contact via 85 of the multilayer wiring layer 82. The bonding metal pad 84a and the contact via 85 are formed by, for example, a dual damascene process.

[0247] Next, as shown in FIG. 21E , a substrate 80 equipped with a readout circuit and the like is stacked on a photodetector substrate 96 equipped with a temperature detection element 60 and the like. The stacking of the substrate 80 and the photodetector substrate 96 is achieved by bonding the bonding electrode pad 84a of the substrate 80 and the bonding metal pad 92 of the photodetector substrate 96 by metal-to-metal bonding with their respective bonding surfaces facing each other. In this process, the bonding film 91 of the photodetector substrate 96 is bonded to the interlayer insulating film 83 of the substrate 80. The bonding between the bonding film 91 and the interlayer insulating film 83, as well as the bonding between the bonding metal pad 84a and the bonding metal pad 92, is performed by thick deposition after surface improvement treatment, such as plasma irradiation. This process electrically connects the temperature detection element 60 to the readout circuit of the substrate 80.

[0248] 21F, the processing substrate 95 is removed. The processing substrate 95 can be removed by, for example, a polishing process.

[0249] Next, as shown in FIG. 21G, a diaphragm 30B is formed on the insulating film 21. Specifically, first, an insulating film is formed on the insulating film 21 by, for example, CVD so as to cover the beam portion 50, and then this insulating film is patterned by, for example, well-known photolithography and dry etching techniques to form insulating films 25a and 25b. Next, a light-absorbing film 32 is formed on the insulating film 21 by, for example, CVD so as to cover the insulating films 21a and 21b, and then the light-absorbing film 32 is etched to a predetermined planar shape and through-holes 41 are formed as openings. This forms a diaphragm 30B including the insulating film 25b, the light-absorbing film 32, and the through-holes 41. The light-absorbing film 32 can also be formed by applying ink containing a light-absorbing material onto the insulating film 21 by spin coating.

[0250] Next, the insulating film 21, which is a sacrificial film, is processed by, for example, dry etching or wet etching to form a cavity 70 between the reflector 11 and the diaphragm 30B, as shown in Figure 21H. In forming this cavity 70, etching conditions are selected so that the etching selectivity between the insulating film 21 and the other films is sufficiently large, and the film materials are selected in advance. Through this process, a frame 20 including the insulating film 21 and the insulating film 25a is formed on a substrate 80 serving as a base member, and a diaphragm 30B is formed that is supported by the frame 20 via the beams 50 and is separated from the substrate 80 in a floating state via the cavity 70.

[0251] <<Major Effects of Seventh Embodiment>> The present technology can also be applied to the sensor 1G of the seventh embodiment, and effects similar to those of the first embodiment described above can be obtained.

[0252] Furthermore, according to the manufacturing method of the seventh embodiment, it is possible to manufacture a sensor 1G that is excellent in resistance to structural damage caused by warping of the diaphragm 30B.

[0253] In the seventh embodiment, the readout circuit is formed on the base 80, while the temperature detection element 60 is formed on a processing substrate 95 separate from the base 80. Therefore, even if the film formation temperature of the temperature detection element 400 is high, the base 80 is not thermally damaged.

[0254] Furthermore, when the circuit board 81 is disposed directly below the temperature detection element 60 as in the seventh embodiment, it becomes easier to route the wiring in an imaging device in which a plurality of sensors 1G are arranged in a two-dimensional array.

[0255] The manufacturing method of the sensor 1G is not limited to the above, and the sensor 1G may be manufactured using other manufacturing processes.

[0256] The bonding technique shown in the seventh embodiment can also be applied to the sensor 1A of the first embodiment described above, which includes the diaphragm 30A.

[0257] Eighth Embodiment FIG. 22 is a block diagram showing an example of the configuration of an imaging device according to an eighth embodiment of the present technology.

[0258] As shown in FIG. 22 , the imaging device 2 of the eighth embodiment has a pixel array section 3, a vertical drive section 4, an ADC (Analog Digital Converter) 5, a horizontal drive section 6, a signal processing circuit 7, and a control section 8.

[0259] A plurality of pixels are arranged in a two-dimensional array in the pixel array section 3. The specific configuration of the pixel array section 3 will be described later.

[0260] The vertical drive unit 4 is connected to row reset lines (not shown) and row selection lines (not shown) of the pixel array unit 3. The vertical drive unit 4 is composed of a shift register, an address decoder, etc., and controls scanning of pixel rows and addresses of pixel rows when selecting each pixel of the pixel array unit 3.

[0261] The ADCs 5 are provided corresponding to pixel columns in the pixel array unit 3. The ADCs 5 convert analog pixel signals output from each pixel into digital pixel signals. For example, a single-slope ADC can be used for the ADC 5. The single-slope ADC compares the analog pixel signals read from each pixel with a ramp wave reference signal, amplifies the difference, and converts it into a digital signal.

[0262] The horizontal drive unit 6 is configured with a shift register, an address decoder, etc., and controls the scanning of pixel rows and the addresses of pixel rows when reading out pixel signals from the pixel array unit 3. Under the control of this horizontal drive unit 6, the pixel signals converted into digital signals by the ADC 5 are read out to the signal processing circuit 7.

[0263] The signal processing circuit 7 generates two-dimensional image data by performing predetermined signal processing on the digital signal read out from the ADC 5. For example, the signal processing circuit 7 performs digital signal processing such as correction of vertical line defects and point defects, parallel-serial conversion, compression, encoding, addition, averaging, and intermittent operation.

[0264] The control unit 8 controls the vertical drive unit 4 and the horizontal drive unit 6 .

[0265] Fig. 23 is a plan view of the pixel array section 3. As shown in Fig. 23, a plurality of sensors 1 are arranged in a two-dimensional array in the pixel array section 3. Each sensor 1 is one of sensors 1A to 1G described in the first to seventh embodiments above. One pixel is composed of a sensor 1 and one readout circuit. An example of a readout circuit will be described below with reference to Figs. 24A and 24B.

[0266] 24A is a circuit diagram of a voltage-readout type readout circuit. In the readout circuit 9A shown in FIG. 24A, the detection voltage of the temperature detection element 60 is input to the non-inverting input terminal (+) of the differential amplifier AMP via the first selector switch REFSEL or the second selector switch SIGSEL. At this time, the potential of the first selector switch REFSEL is set to the reference voltage Vref. A band-limiting capacitor RBWEN is connected to the transmission path from the sensor 1 to the second selector switch SIGSEL to limit the signal band.

[0267] A sample-and-hold capacitor CSH is connected to the inverting input terminal (-) of the differential amplifier AMP. An auto-zero switch AZ for resetting the potential of the inverting input terminal (-) and a feedback capacitor Cfb are connected in parallel between the inverting input terminal (-) and the output terminal of the differential amplifier AMP. The auto-zero switch AZ is turned on and off under the control of the vertical drive unit 4.

[0268] The output terminal of the differential amplifier AMP is connected to the SS-ADC 13. The output signal of the differential amplifier AMP is read out to the SS-ADC 13 as a pixel signal.

[0269] Fig. 24B is a circuit diagram of a readout circuit of the CTIA (Capacitive Transimpedance Amplifier) ​​type. In Fig. 24B, the same circuit elements as those in the readout circuit 9A shown in Fig. 24A are denoted by the same reference numerals, and detailed description thereof will be omitted.

[0270] In the readout circuit 9B shown in FIG. 24B, the detection voltage of the temperature detection element 60 is input to the non-inverting input terminal (+) and the inverting input terminal (-) of the differential amplifier AMP. At this time, the potential of the non-inverting input terminal (+) is set to the reference voltage Vref. In addition, an auto-zero switch AZ and a feedback capacitor Cfb are connected in parallel between the inverting input terminal (-) and the output terminal of the differential amplifier AMP.

[0271] In this readout circuit 9B, similarly to the above-described readout circuit 9A, an SS-ADC 13 is connected to the output terminal of the differential amplifier AMP. The output signal of the differential amplifier AMP is read out to the SS-ADC 13 as a pixel signal.

[0272] According to the present embodiment described above, structural damage caused by warping of the diaphragm can be suppressed, thereby improving imaging performance.

[0273] Ninth Embodiment In this ninth embodiment, a case will be described in which the above-described imaging device 2 is applied to an electronic device such as an infrared camera, etc. Fig. 25 is a block diagram showing an example of the configuration of an electronic device according to the ninth embodiment of the present technology.

[0274] 25 , an electronic device 100 according to the ninth embodiment of the present technology includes an imaging optical system 101 including a lens group and the like, an imaging unit 102, a DSP (Digital Signal Processor) circuit 103, a frame memory 104, a display device 105, a recording device 106, an operation system 107, and a power supply system 108. The DSP circuit 103, the frame memory 104, the display device 105, the recording device 106, the operation system 107, and the power supply system 108 are connected to each other via a bus line 109.

[0275] The imaging optical system 101 captures incident light (image light) from a subject and forms an image on the imaging surface of the imaging unit 102. The imaging unit 102 converts the amount of incident light imaged on the imaging surface by the imaging optical system 101 into an electrical signal on a pixel-by-pixel basis and outputs the signal as a pixel signal. The DSP circuit 103 performs general camera signal processing, such as white balance processing, demosaic processing, and gamma correction processing.

[0276] The frame memory 104 is used to store data as needed during signal processing in the DSP circuit 103. The display device 105 is a panel display device such as a liquid crystal display device or an organic EL (electroluminescence) display device, and displays moving images or still images captured by the imaging unit 102. The recording device 106 records the moving images or still images captured by the imaging unit 102 on a recording medium such as a portable semiconductor memory, an optical disk, or an HDD (Hard Disk Drive).

[0277] The operation system 107, under the operation of a user, issues operation commands for various functions of the electronic device 100. The power supply system 108 appropriately supplies various types of power to the DSP circuit 103, frame memory 104, display device 105, recording device 106, and operation system 107 as operating power sources to these devices.

[0278] In the electronic device 100, the imaging device 2 according to the eighth embodiment described above can be used as the imaging unit 102. The imaging device 2 according to the eighth embodiment includes any one of the sensors 1A to 1G described in the first to seventh embodiments. Therefore, by applying the imaging device 2 to the imaging unit 102, it is possible to improve imaging performance.

[0279] <Application to a Mobile Body> The technology according to the present disclosure (the present technology) can be applied to various products. For example, the technology according to the present disclosure may be realized as a device mounted on any type of mobile body, such as an automobile, an electric vehicle, a hybrid electric vehicle, a motorcycle, a bicycle, personal mobility, an airplane, a drone, a ship, or a robot.

[0280] FIG. 26 is a block diagram showing a schematic configuration example of a vehicle control system, which is an example of a mobile object control system to which the technology according to the present disclosure can be applied.

[0281] The vehicle control system 12000 includes a plurality of electronic control units connected via a communication network 12001. In the example shown in Fig. 26, the vehicle control system 12000 includes a drive system control unit 12010, a body system control unit 12020, an outside-vehicle information detection unit 12030, an inside-vehicle information detection unit 12040, and an integrated control unit 12050. Also shown as functional components of the integrated control unit 12050 are a microcomputer 12051, an audio / video output unit 12052, and an in-vehicle network I / F (Interface) 12053.

[0282] The drivetrain control unit 12010 controls the operation of devices related to the drivetrain of the vehicle in accordance with various programs. For example, the drivetrain control unit 12010 functions as a control device for a drive force generating device for generating a drive force of the vehicle, such as an internal combustion engine or a drive motor, a drive force transmission mechanism for transmitting the drive force to the wheels, a steering mechanism for adjusting the steering angle of the vehicle, and a braking device for generating a braking force of the vehicle.

[0283] The body system control unit 12020 controls the operation of various devices equipped in the vehicle body according to various programs. For example, the body system control unit 12020 functions as a control device for a keyless entry system, a smart key system, a power window device, or various lamps such as headlamps, backup lamps, brake lamps, turn signals, and fog lamps. In this case, radio waves transmitted from a portable device that serves as a key or signals from various switches can be input to the body system control unit 12020. The body system control unit 12020 receives these radio waves or signals and controls the vehicle's door lock device, power window device, lamps, etc.

[0284] The outside-vehicle information detection unit 12030 detects information outside the vehicle equipped with the vehicle control system 12000. For example, an imaging unit 12031 is connected to the outside-vehicle information detection unit 12030. The outside-vehicle information detection unit 12030 causes the imaging unit 12031 to capture images outside the vehicle and receives the captured images. The outside-vehicle information detection unit 12030 may perform object detection processing or distance detection processing for people, cars, obstacles, signs, characters on the road surface, etc. based on the received images.

[0285] The imaging unit 12031 is a sensor that receives light and outputs an electrical signal corresponding to the amount of light received. The imaging unit 12031 can output the electrical signal as an image or as distance measurement information. The light received by the imaging unit 12031 may be visible light or invisible light such as infrared light.

[0286] The in-vehicle information detection unit 12040 detects information inside the vehicle. For example, a driver state detection unit 12041 that detects the state of the driver is connected to the in-vehicle information detection unit 12040. The driver state detection unit 12041 includes, for example, a camera that captures an image of the driver, and the in-vehicle information detection unit 12040 may calculate the degree of fatigue or concentration of the driver based on the detection information input from the driver state detection unit 12041, or may determine whether the driver is dozing off.

[0287] The microcomputer 12051 can calculate control target values ​​for the driving force generating device, steering mechanism, or braking device based on the information inside and outside the vehicle acquired by the outside-vehicle information detection unit 12030 or the inside-vehicle information detection unit 12040, and output control commands to the drive system control unit 12010. For example, the microcomputer 12051 can perform cooperative control aimed at realizing the functions of an ADAS (Advanced Driver Assistance System), including vehicle collision avoidance or impact mitigation, following driving based on the distance between vehicles, maintaining vehicle speed, vehicle collision warning, vehicle lane departure warning, etc.

[0288] Furthermore, the microcomputer 12051 can perform cooperative control for the purpose of autonomous driving, which allows the vehicle to travel autonomously without driver operation, by controlling the driving force generating device, steering mechanism, braking device, etc., based on information about the surroundings of the vehicle acquired by the outside information detection unit 12030 or the inside information detection unit 12040. The microcomputer 12051 can also output control commands to the body system control unit 12020 based on information about the outside of the vehicle acquired by the outside information detection unit 12030. For example, the microcomputer 12051 can perform cooperative control for the purpose of preventing glare, such as controlling the headlamps and switching from high beams to low beams, depending on the position of a preceding vehicle or an oncoming vehicle detected by the outside information detection unit 12030. The audio / video output unit 12052 transmits at least one output signal of audio and / or video to an output device capable of visually or audibly notifying the vehicle occupants or the outside of the vehicle of information. 19, the output devices are exemplified by an audio speaker 12061, a display unit 12062, and an instrument panel 12063. The display unit 12062 may include, for example, at least one of an on-board display and a head-up display.

[0289] Fig. 27 is a diagram showing an example of the installation position of the imaging unit 12031. In Fig. 27, the imaging unit 12031 includes imaging units 12101, 12102, 12103, 12104, and 12105.

[0290] The imaging units 12101, 12102, 12103, 12104, and 12105 are provided, for example, at positions such as the front nose, side mirrors, rear bumper, back door, and the top of the windshield inside the vehicle cabin of the vehicle 12100. The imaging unit 12101 provided on the front nose and the imaging unit 12105 provided on the top of the windshield inside the vehicle cabin mainly acquire images of the front of the vehicle 12100. The imaging units 12102 and 12103 provided on the side mirrors mainly acquire images of the sides of the vehicle 12100. The imaging unit 12104 provided on the rear bumper or back door mainly acquires images of the rear of the vehicle 12100. The imaging unit 12105 provided on the top of the windshield inside the vehicle cabin is mainly used to detect preceding vehicles, pedestrians, obstacles, traffic lights, traffic signs, lanes, etc.

[0291] 27 shows an example of the imaging ranges of the imaging units 12101 to 12104. Imaging range 12111 indicates the imaging range of the imaging unit 12101 provided on the front nose, imaging ranges 12112 and 12113 indicate the imaging ranges of the imaging units 12102 and 12103 provided on the side mirrors, respectively, and imaging range 12114 indicates the imaging range of the imaging unit 12104 provided on the rear bumper or back door. For example, by overlaying the image data captured by the imaging units 12101 to 12104, an overhead image of the vehicle 12100 viewed from above can be obtained.

[0292] At least one of the image capturing units 12101 to 12104 may have a function of acquiring distance information. For example, at least one of the image capturing units 12101 to 12104 may be a stereo camera made up of multiple image capturing elements, or may be an image capturing element having pixels for phase difference detection.

[0293] For example, based on the distance information obtained from the imaging units 12101 to 12104, the microcomputer 12051 can calculate the distance to each three-dimensional object within the imaging ranges 12111 to 12114 and the change in this distance over time (relative speed with respect to the vehicle 12100), thereby extracting as a preceding vehicle, in particular, the three-dimensional object that is the closest three-dimensional object on the path of the vehicle 12100 and traveling in approximately the same direction as the vehicle 12100 at a predetermined speed (e.g., 0 km / h or higher). Furthermore, the microcomputer 12051 can set a vehicle-to-vehicle distance to be maintained in advance in front of the preceding vehicle, and perform automatic braking control (including follow-up stop control), automatic acceleration control (including follow-up start control), etc. In this way, cooperative control can be performed for the purpose of autonomous driving, which runs autonomously without relying on driver operation.

[0294] For example, the microcomputer 12051 classifies and extracts three-dimensional object data regarding three-dimensional objects into two-wheeled vehicles, ordinary vehicles, large vehicles, pedestrians, utility poles, and other three-dimensional objects based on distance information obtained from the imaging units 12101 to 12104, and can use the data for automatic obstacle avoidance. For example, the microcomputer 12051 distinguishes obstacles around the vehicle 12100 into obstacles that are visible to the driver of the vehicle 12100 and obstacles that are difficult to see. The microcomputer 12051 then determines a collision risk that indicates the risk of collision with each obstacle, and when the collision risk is equal to or greater than a set value and a collision is possible, the microcomputer 12051 can provide driving assistance for collision avoidance by outputting an alarm to the driver via the audio speaker 12061 or the display unit 12062, or by performing forced deceleration or avoidance steering via the drive system control unit 12010.

[0295] At least one of the image capturing units 12101 to 12104 may be an infrared camera that detects infrared rays. For example, the microcomputer 12051 can recognize a pedestrian by determining whether a pedestrian is present in the images captured by the image capturing units 12101 to 12104. Such pedestrian recognition is performed, for example, by extracting feature points from the images captured by the image capturing units 12101 to 12104 as infrared cameras and performing pattern matching on a series of feature points that indicate the outline of an object to determine whether the object is a pedestrian. When the microcomputer 12051 determines that a pedestrian is present in the images captured by the image capturing units 12101 to 12104 and recognizes the pedestrian, the audio / image output unit 12052 controls the display unit 12062 to superimpose a rectangular outline on the recognized pedestrian for emphasis. The audio / image output unit 12052 may also control the display unit 12062 to display an icon or the like indicating the pedestrian at a desired position.

[0296] An example of a vehicle control system to which the technology according to the present disclosure can be applied has been described above. The technology according to the present disclosure can be applied to, for example, the image capturing unit 12031 of the above-described configuration. Specifically, the image capturing unit 102 can be applied to the image capturing unit 12031. By applying the technology according to the present disclosure, it is possible to obtain captured images with higher sensitivity and superior response speed, thereby improving safety.

[0297] The present technology may be configured as follows: (1) A sensor comprising: a base member; a diaphragm including a light absorbing film disposed on the base member via a hollow portion; a beam portion supporting the diaphragm on the base member; and a temperature detection element that detects a temperature change of the light absorbing film, wherein the diaphragm includes a plurality of openings that are unevenly arranged in one direction in a planar view. (2) The sensor according to (1), wherein the plurality of openings are arranged in an arrangement in which the density increases from a peripheral edge side of the diaphragm toward the inside in the one direction. (3) The sensor according to (1) or (2), wherein the diaphragm has a rectangular planar shape in a planar view, and the one direction is a vertical direction that crosses two sides of the diaphragm that are located opposite each other in a planar view. (4) The sensor according to (1) or (2), wherein the diaphragm has a rectangular planar shape in a plan view, and the one direction is a diagonal direction crossing two corners of the diaphragm that are located opposite each other in a plan view. (5) The sensor according to (1) or (2), wherein the plurality of openings are through-holes spaced apart from the peripheral edge of the diaphragm in a plan view, or slits cutting inward from the peripheral edge of the diaphragm in a plan view. (6) The sensor according to (1) or (2), wherein the plurality of openings include through-holes spaced apart from the peripheral edge of the diaphragm in a plan view, and slits cutting inward from the peripheral edge of the diaphragm in a plan view, and the through-holes and the slits are aligned in a direction intersecting the one direction in a plan view. (7) The sensor according to (5) or (6), wherein the through-holes have a circular or elongated planar shape in a plan view. (8) A sensor comprising: a base member, a diaphragm including a light absorbing film disposed on the base member via a hollow portion, a beam portion supporting the diaphragm on the base member, and a temperature detection element that detects a temperature change of the light absorbing film, wherein the diaphragm includes a plurality of through holes and a notch portion that cuts inward from a peripheral portion of the diaphragm. (9) The sensor according to (8) above, wherein the notch portion is disposed near the beam portion on the peripheral portion of the diaphragm.(10) The sensor according to (8), wherein the diaphragm has a rectangular planar shape in a planar view, and the cutout portions and beam portions are respectively provided on two side portions of the diaphragm that are located opposite each other in a planar view. (11) The sensor according to (10), wherein the cutout portions arranged on each of the two side portions are arranged on a center line that crosses a middle portion of each of the two side portions of the diaphragm in a planar view. (12) The sensor according to (10), wherein the cutout portions arranged on each of the two side portions are arranged on a virtual line that obliquely intersects a center line that crosses a middle portion of each of the two side portions of the diaphragm in a planar view. (13) The sensor according to (8), wherein the diaphragm has a rectangular planar shape in a planar view, and the cutout portions and beam portions are respectively provided on two corner portions of the diaphragm that are located opposite each other in a planar view. (14) The sensor according to (10) above, wherein the cutout portions arranged on each of the two side portions are arranged on a diagonal line connecting the two corner portions of the diaphragm in a plan view. (15) The sensor according to (10) above, wherein the cutout portions arranged on each of the two side portions are arranged on a virtual line that diagonally intersects with the diagonal line connecting the two side portions of the diaphragm in a plan view. (16) An imaging device in which the sensors according to any one of (1) to (15) above are arranged in a two-dimensional array. (17) An electronic device comprising the imaging device according to (16) above.

[0298] The scope of the present technology is not limited to the exemplary embodiments shown and described, but includes all embodiments that achieve equivalent effects to those intended by the present technology. Furthermore, the scope of the present technology is not limited to the combination of the features of the invention defined by the claims, but may be defined by any desired combination of specific features among all the respective disclosed features.

[0299] DESCRIPTION OF SYMBOLS 1, 1A, 1B, 1C, 1D, 1E, 1F, 1G...sensor 2...imaging device 3...pixel array section 4...vertical drive section 5...ADC 6...horizontal drive section 7...signal processing circuit 8...control section 9A, 9B...readout circuit 10...base member 11...reflector 20...frame section 21...insulating film 22...wiring 23...contact via 25a, 25b...insulating film 30A, 30B...diaphragm 31...periphery section 31a １ , 31a ２ , 31a ３ , 31a ４ ...side part 31b １ , 31b ２ , 31b ３ , 31b ４ ...corner portion 25b...insulating film 32...light absorbing film 40...opening 41...circular through hole 42...long through hole 43...slit 44...notched portion 50...beam portion 60...temperature detecting element 70...cavity portion 80...base 81...circuit board 82...multilayer wiring layer 83...interlayer insulating film 84...wiring 84a...bonding metal pad 85...contact via 86...etching stop film 87...contact via 91...bonding film 92...bonding metal pad 93...contact via 95...processing substrate 96...light detecting substrate 100...electronic device 101...imaging optical system 102...imaging unit 103...DSP (Digital Signal Processor) circuit 104...frame memory 105...display device 106...recording device 107...operation system 108...power supply system 109...bus line L １ …Center line L ２ ~L ７ ...Virtual line Ld １ , Ld ２ …diagonal

Claims

1. A sensor comprising: a base member; a diaphragm including a light absorbing film disposed on the base member via a cavity; a beam portion supporting the diaphragm on the base member; and a temperature detection element that detects a temperature change in the light absorbing film, wherein the diaphragm includes a plurality of openings that are unevenly arranged in one direction in a plan view.

2. The sensor according to claim 1, wherein the plurality of openings are arranged in an arrangement in which the density increases from the peripheral edge side of the diaphragm toward the inside in the one direction.

3. The sensor according to claim 1, wherein the diaphragm has a rectangular planar shape in a plan view, and the one direction is a vertical direction that crosses two sides of the diaphragm that are located opposite each other in a plan view.

4. The sensor according to claim 1, wherein the diaphragm has a rectangular planar shape in a plan view, and the one direction is a diagonal direction that crosses two corners of the diaphragm that are located on opposite sides of each other in a plan view.

5. The sensor according to claim 1, wherein the plurality of openings are through holes spaced apart from the peripheral edge of the diaphragm in a plan view, or slits extending inward from the peripheral edge of the diaphragm in a plan view.

6. The sensor described in claim 1, wherein the plurality of openings include through holes spaced apart from the peripheral edge of the diaphragm in a planar view and slits extending inward from the peripheral edge of the diaphragm in a planar view, and the through holes and the slits are aligned in a direction intersecting the one direction in a planar view.

7. The sensor according to claim 5 or 6, wherein the through-hole has a circular or elongated planar shape in plan view.

8. A sensor comprising: a base member; a diaphragm including a light absorbing film disposed on the base member via a cavity; a beam portion supporting the diaphragm on the base member; and a temperature detection element that detects a temperature change in the light absorbing film, wherein the diaphragm includes a plurality of through holes and notches that cut inward from the peripheral edge of the diaphragm.

9. The sensor according to claim 8, wherein the notch is disposed near the beam on the periphery of the diaphragm.

10. The sensor described in claim 8, wherein the diaphragm has a rectangular planar shape in a plan view, and the cutout portions and beam portions are each provided on two side portions of the diaphragm that are located opposite each other in a plan view.

11. The sensor described in claim 10, wherein the cutouts arranged on each of the two side portions are arranged on a center line that crosses the middle of each of the two side portions of the diaphragm in a plan view.

12. The sensor described in claim 10, wherein the cutouts arranged on each of the two side portions are arranged on an imaginary line that diagonally intersects with a center line that crosses the middle portion of each of the two side portions of the diaphragm in a plan view.

13. The sensor described in claim 8, wherein the diaphragm has a rectangular planar shape in a plan view, and the cutout portion and the beam portion are each provided on two corner sides of the diaphragm that are located opposite each other in a plan view.

14. The sensor according to claim 10, wherein the cutouts arranged on each of the two side portions are arranged on a diagonal line connecting the two corner portions of the diaphragm in a plan view.

15. A sensor as described in claim 10, wherein the cutouts arranged on each of the two sides are arranged on an imaginary line that diagonally intersects with a diagonal line connecting the two sides of the diaphragm in a plan view.

16. An imaging device in which the sensors according to claim 1 are arranged in a two-dimensional array.

17. An imaging device in which the sensors according to claim 8 are arranged in a two-dimensional array.

18. An electronic device equipped with the imaging device according to claim 16.

19. An electronic device equipped with the imaging device according to claim 17.

Images