Pattern formation method, active light ray-sensitive or radiation-sensitive resin composition, and method for producing electronic device

The described resin composition and development method enhance ultrafine pattern formation by increasing sensitivity and resolution, addressing the challenges of forming precise semiconductor patterns.

WO2025254074A1PCT designated stage Publication Date: 2025-12-11FUJIFILM CORP
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Patent Information

Application Number
PCT/JP2025/019924
Authority / Receiving Office
WO · WO
Patent Type
Applications
Current Assignee / Owner
Priority Date
2024-06-07
Filing Date
2025-06-02
Publication Date
2025-12-11

AI Technical Summary

Technical Problem

Existing resist compositions struggle to form ultrafine patterns with high sensitivity, resolution, and line width roughness (LWR) performance, particularly in the submicron or quarter-micron range, as demanded by advanced semiconductor manufacturing processes.

Method used

A pattern forming method using an actinic ray-sensitive or radiation-sensitive resin composition containing a resin with a specific repeating unit that increases polarity under acid action, combined with a compound generating acid upon irradiation and a solvent system of butyl acetate and hydrocarbons with 9 to 12 carbon atoms for development.

Benefits of technology

Enables the formation of ultrafine patterns with improved sensitivity, resolution, and reduced line width roughness, facilitating the manufacturing of advanced semiconductor devices.

✦ Generated by Eureka AI based on patent content.

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Patent Text Reader

Abstract

This pattern formation method includes: a step for forming a film using an active light ray-sensitive or radiation-sensitive resin composition that contains a resin (A) which contains a repeating unit represented by general formula (P1) shown in the description and the polarity of which increases with the action of an acid, a compound (B) that generates an acid when irradiated with active light rays or radiation, and a solvent (E); a step for exposing the film to light; and a step for developing the exposed film using an organic processing liquid containing butyl acetate and a hydrocarbon having 9-12 carbon atoms. Also provided are the active light ray-sensitive or radiation-sensitive resin composition, and a method for producing an electronic device, the method including the pattern formation method.
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Description

Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, and method for manufacturing electronic device

[0001] The present invention relates to a pattern forming method, an actinic ray-sensitive or radiation-sensitive resin composition, and a method for manufacturing an electronic device. More specifically, the present invention relates to an actinic ray-sensitive or radiation-sensitive resin composition, a pattern forming method, and a method for manufacturing an electronic device that can be suitably used in an ultra-microlithography process applicable to processes for manufacturing VLSI (Large Scale Integration) and high-capacity microchips, processes for creating molds for nanoimprinting, and processes for manufacturing high-density information recording media, as well as other photofabrication processes.

[0002] Conventionally, in the manufacturing process of semiconductor devices such as ICs (Integrated Circuits) and LSIs (Large Scale Integration), microfabrication is performed by lithography using resist compositions. In recent years, with the increasing integration density of integrated circuits, there has been a demand for ultrafine pattern formation in the submicron or quarter-micron range. Accordingly, there has been a trend toward shorter exposure wavelengths, from g-line to i-line and then to KrF excimer laser light, and currently, exposure machines using ArF excimer lasers with a wavelength of 193 nm as a light source have been developed. Furthermore, as a technique for further improving resolution, the so-called immersion method, in which a high refractive index liquid (hereinafter also referred to as "immersion liquid") is filled between the projection lens and the sample, has been developed.

[0003] Currently, in addition to excimer laser light, lithography using electron beams (EB), X-rays, extreme ultraviolet rays (EUV), etc. is also being developed. Accordingly, resist compositions that are effectively sensitive to various types of actinic rays or radiation have been developed.

[0004] Patent Document 1 describes a resist composition containing a resin containing a repeating unit having an aromatic ring having a hydroxy group and a group having a structure in which a carboxy group is protected by an acid-dissociable group. Patent Document 2 describes a pattern formation method in which a film is formed using an actinic ray-sensitive or radiation-sensitive resin composition, exposed to light, and then developed and / or rinsed with an organic processing liquid containing butyl acetate and a hydrocarbon having 11 or more carbon atoms.

[0005] Japanese Patent Application Publication No. 2023-146349 International Publication No. 2022 / 158323

[0006] Recently, the performance required of resist compositions and pattern forming methods has become increasingly higher, but the increasing demand for finer patterns has made it increasingly difficult to satisfy such requirements.

[0007] Under the above circumstances, an object of the present invention is to provide a pattern forming method capable of forming an ultrafine pattern (e.g., a line width of 20 nm or less) that is excellent in sensitivity, LWR performance (line width roughness), and resolution, and an actinic ray-sensitive or radiation-sensitive resin composition. Another object of the present invention is to provide a method for manufacturing an electronic device that includes the pattern forming method.

[0008] The present inventors have found that the above problems can be solved by the following configuration.

[0009] [1] A pattern forming method comprising: (1) a step of forming a film using an actinic ray-sensitive or radiation-sensitive resin composition comprising: a resin (A) whose polarity increases under the action of an acid, the resin (A) containing a repeating unit represented by the following general formula (P1); a compound (B) that generates an acid upon irradiation with actinic rays or radiation; and a solvent (E); (2) a step of exposing the film; and (3) a step of developing the exposed film with an organic treatment liquid containing butyl acetate and a hydrocarbon having from 9 to 12 carbon atoms.

[0010]

[0011] In general formula (P1), R Arepresents a hydrogen atom or an alkyl group having 1 to 5 carbon atoms. 1 represents a single bond or a divalent linking group. 1 represents a single bond or a divalent linking group. Ra represents a group that leaves when acted upon by an acid. Rb represents a hydrogen atom or a chain hydrocarbon group. m represents an integer of 0 to 3. n represents an integer of 1 or greater, provided that n≦m×2+4 is satisfied. When n represents an integer of 2 or greater, multiple Rb's may be the same or different.

[0012] [2] The pattern forming method according to [1], wherein the resin (A) has an acid group. [3] The pattern forming method according to [1] or [2], wherein Rb in the general formula (P1) represents a hydrogen atom.

[0013] [4] The pattern forming method according to any one of [1] to [3], wherein Ra in the general formula (P1) contains a cyclic structure. [5] The pattern forming method according to [4], wherein Ra in the general formula (P1) is a group represented by the following general formula (1A):

[0014]

[0015] In general formula (1A), R G1 ~R G2 R each independently represents an alkyl group or an alkenyl group, and are bonded to each other to form an alicyclic hydrocarbon group having 3 to 20 carbon atoms together with the carbon atom to which they are bonded. G3 represents an alkyl group, a cycloalkyl group, an alkenyl group, or an aryl group. * represents a bond.

[0016] [6] The pattern forming method according to any one of [1] to [5], wherein Ra in the general formula (P1) is a group represented by the following general formula (1B):

[0017]

[0018] In general formula (1B), R H1 ~R H3 each independently represents an alkyl group, a cycloalkyl group, an alkenyl group, or an aryl group. H1 ~R H3At least one of R represents an alkenyl group. H1 and R H2 may be bonded to each other to form, together with the carbon atoms to which they are bonded, an alicyclic hydrocarbon group having 3 to 20 carbon atoms. * represents a bond.

[0019] [7] R in the above general formula (1B) H1 and R H2 [8] The pattern forming method according to [6], wherein R in the general formula (1B) is bonded to each other to form an alicyclic hydrocarbon group having 3 to 20 carbon atoms together with the carbon atom to which they are bonded. H1 and R H2 are bonded to each other to form an alicyclic hydrocarbon group having 3 to 20 carbon atoms together with the carbon atoms to which they are bonded, and R H3 represents an alkenyl group. [9] The pattern formation method according to any one of [1] to [8], wherein m in general formula (P1) is 0.

[10] The pattern formation method according to any one of [1] to [9], wherein the resin (A) has at least one selected from the group consisting of a lactone group, a carbonate group, a sultone group, and a saturated hydrocarbon group having a hydroxyl group.

[0020]

[11] The pattern formation method according to any one of [1] to

[10] , wherein the content of the repeating unit represented by general formula (P1) is 55 mol % or more based on all repeating units in the resin (A).

[12] The pattern formation method according to any one of [1] to

[11] , wherein the weight average molecular weight of the resin (A) is 8,000 or more.

[13] The pattern formation method according to any one of [1] to

[12] , wherein the dispersity of the resin (A) is less than 1.60.

[0021]

[14] An actinic ray-sensitive or radiation-sensitive resin composition comprising: a resin (A) whose polarity increases under the action of an acid, the resin (A) containing a repeating unit represented by the following general formula (P1); a compound (B) that generates an acid upon irradiation with actinic rays or radiation; and a solvent (E), the actinic ray-sensitive or radiation-sensitive resin composition being used for forming a pattern by development with an organic treatment liquid containing butyl acetate and a hydrocarbon having from 9 to 12 carbon atoms:

[0022]

[0023] In general formula (P1), R A represents a hydrogen atom or an alkyl group having 1 to 5 carbon atoms. 1 represents a single bond or a divalent linking group. 1 represents a single bond or a divalent linking group. Ra represents a group that leaves when acted upon by an acid. Rb represents a hydrogen atom or a chain hydrocarbon group. m represents an integer of 0 to 3. n represents an integer of 1 or greater, provided that n≦m×2+4 is satisfied. When n represents an integer of 2 or greater, multiple Rb's may be the same or different.

[0024]

[15] A method for manufacturing an electronic device, comprising the pattern forming method according to any one of [1] to

[13] .

[0025] The present invention provides a pattern forming method and an actinic-ray- or radiation-sensitive resin composition capable of forming an ultrafine pattern (e.g., a line width of 20 nm or less) that is excellent in sensitivity, LWR performance, and resolution. The present invention also provides a method for manufacturing an electronic device that includes the pattern forming method.

[0026] The present invention will be described in detail below. The following description of the components will be based on representative embodiments of the present invention, but the present invention is not limited to such embodiments.

[0027] In this specification, "actinic rays" or "radiation" refers to, for example, the bright line spectrum of a mercury lamp, far ultraviolet rays typified by excimer lasers, extreme ultraviolet rays (EUV), X-rays, soft X-rays, and electron beams (EB). In this specification, "light" refers to actinic rays or radiation. Unless otherwise specified, in this specification, "exposure" includes not only exposure using the bright line spectrum of a mercury lamp, far ultraviolet rays typified by excimer lasers, extreme ultraviolet rays, X-rays, and EUV, but also drawing using particle beams such as electron beams and ion beams. In this specification, the word "to" is used to mean that the numerical values ​​before and after it are included as the lower and upper limits.

[0028] In this specification, (meth)acrylate refers to at least one of acrylate and methacrylate, and (meth)acrylic acid refers to at least one of acrylic acid and methacrylic acid.

[0029] In this specification, the weight average molecular weight (Mw), number average molecular weight (Mn), and dispersity (also referred to as molecular weight distribution) (Mw / Mn) of a resin are defined as polystyrene-equivalent values ​​measured by gel permeation chromatography (GPC) using a GPC apparatus (HLC-8120GPC manufactured by Tosoh Corporation) (solvent: tetrahydrofuran, flow rate (sample injection amount): 10 μL, column: TSK gel Multipore HXL-M manufactured by Tosoh Corporation, column temperature: 40° C., flow rate: 1.0 mL / min, detector: differential refractive index detector).

[0030] In the description of groups (atomic groups) in this specification, unless contrary to the spirit of the present invention, notations that do not specify whether they are substituted or unsubstituted include groups that contain a substituent as well as groups that do not have a substituent. For example, the term "alkyl group" includes not only alkyl groups that do not have a substituent (unsubstituted alkyl groups) but also alkyl groups that have a substituent (substituted alkyl groups). Furthermore, the term "organic group" in this specification refers to a group containing at least one carbon atom. Unless otherwise specified, a monovalent substituent is preferred as the substituent. Examples of the substituent include monovalent non-metallic atomic groups excluding hydrogen atoms, which can be selected, for example, from the following substituents T:

[0031] (Substituent T) Examples of the substituent T include halogen atoms such as a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom; alkoxy groups such as a methoxy group, an ethoxy group, and a tert-butoxy group; a cycloalkyloxy group; an aryloxy group such as a phenoxy group and a p-tolyloxy group; an alkoxycarbonyl group such as a methoxycarbonyl group and a butoxycarbonyl group; a cycloalkyloxycarbonyl group; an aryloxycarbonyl group such as a phenoxycarbonyl group; an acyloxy group such as an acetoxy group, a propionyloxy group, and a benzoyloxy group; an acetyl group, a benzoyl group, an isobutyryl group, an acryloyl group, a methacrylate group, a methyl ... Examples of the substituent T include acyl groups such as thiazolyl and methoxalyl groups; sulfanyl groups; alkylsulfanyl groups such as methylsulfanyl and tert-butylsulfanyl groups; arylsulfanyl groups such as phenylsulfanyl and p-tolylsulfanyl groups; alkylsulfonyl groups; arylsulfonyl groups; alkyl groups; alkenyl groups; cycloalkyl groups; aryl groups; heteroaryl groups; hydroxy groups; carboxyl groups; formyl groups; sulfo groups; cyano groups; alkylaminocarbonyl groups; arylaminocarbonyl groups; sulfonamide groups; silyl groups; amino groups; carbamoyl groups; etc. In addition, when these substituents can further have one or more substituents, examples of the substituent T also include groups having one or more substituents selected from the above-mentioned substituents as the further substituents (e.g., monoalkylamino groups, dialkylamino groups, arylamino groups, trifluoromethyl groups, etc.).

[0032] In this specification, the bonding direction of a divalent group is not limited unless otherwise specified. For example, when Y is -COO- in a compound represented by the formula "X-Y-Z", Y may be -CO-O- or -O-CO-. The compound may be either "X-CO-O-Z" or "X-O-CO-Z".

[0033] In this specification, the acid dissociation constant (pKa) refers to the pKa in an aqueous solution, and specifically, is a value determined by calculation using the following software package 1 based on a database of Hammett's substituent constants and known literature values. All pKa values ​​described in this specification are values ​​determined by calculation using this software package. Software package 1: Advanced Chemistry Development (ACD / Labs) Software V8.14 for Solaris (1994-2007 ACD / Labs).

[0034] The pKa can also be calculated by molecular orbital calculation. A specific method for this is to calculate the pKa of H in an aqueous solution based on the thermodynamic cycle. + One method is to calculate the dissociation free energy. + The dissociation free energy can be calculated by, for example, DFT (density functional theory), but various other methods have been reported in the literature, and the method is not limited to these. There are several software programs that can perform DFT, and Gaussian 16 is an example.

[0035] In this specification, pKa refers to a value calculated based on a database of Hammett's substituent constants and publicly known literature values ​​using software package 1, as described above, but if pKa cannot be calculated by this method, a value obtained by Gaussian 16 based on DFT (density functional theory) will be adopted. In this specification, pKa refers to "pKa in aqueous solution" as described above, but if pKa in aqueous solution cannot be calculated, "pKa in dimethyl sulfoxide (DMSO) solution" will be adopted.

[0036] In this specification, the term "solid content" refers to components contained in the actinic ray-sensitive or radiation-sensitive resin composition and that form an actinic ray-sensitive or radiation-sensitive film, and does not include solvents. Furthermore, any component contained in the actinic ray-sensitive or radiation-sensitive resin composition and that forms an actinic ray-sensitive or radiation-sensitive film is considered to be a solid content even if it is in a liquid state.

[0037] <Pattern Forming Method> The pattern forming method of the present invention is a pattern forming method comprising: (1) a step of forming a film using an actinic ray-sensitive or radiation-sensitive resin composition containing: a resin (A) whose polarity increases under the action of an acid, which contains a repeating unit represented by the following general formula (P1); a compound (B) that generates an acid upon irradiation with actinic rays or radiation; and a solvent (E); (2) a step of exposing the film to light; and (3) a step of developing the exposed film with an organic treatment liquid containing butyl acetate and a hydrocarbon having from 9 to 12 carbon atoms.

[0038]

[0039] In general formula (P1), R A represents a hydrogen atom or an alkyl group having 1 to 5 carbon atoms. 1 represents a single bond or a divalent linking group. 1 represents a single bond or a divalent linking group. Ra represents a group that leaves when acted upon by an acid. Rb represents a hydrogen atom or a chain hydrocarbon group. m represents an integer of 0 to 3. n represents an integer of 1 or greater, provided that n≦m×2+4 is satisfied. When n represents an integer of 2 or greater, multiple Rb's may be the same or different.

[0040] Although the details of the mechanism by which the pattern formation method of the present invention enables the formation of ultrafine patterns with excellent sensitivity, LWR performance, and resolution, even under conditions where improving pattern performance is difficult, such as the formation of ultrafine patterns (e.g., line widths of 20 nm or less), are not clearly understood, the present inventors speculate as follows: Resin (A) contained in the actinic ray-sensitive or radiation-sensitive resin composition used in the pattern formation method of the present invention has a specific repeating unit represented by general formula (P1), which contains an aromatic ring having a group having an acid-decomposable group in which the carboxy group is protected by a group that leaves under the action of acid (leaving group), and a hydroxy group or alkoxy group represented by —ORb. Such a resin has higher acidity after elimination of the leaving group, compared to resins containing conventional methacrylic acid-type repeating units having an acid-decomposable group in which the carboxy group is protected by a leaving group. Therefore, when a film obtained using an actinic ray- or radiation-sensitive resin composition containing the resin is exposed and developed, the difference in dissolution rate in a developer between the unexposed and exposed regions (so-called dissolution contrast) increases, which is thought to improve sensitivity, resolution, and roughness performance. On the other hand, since the resin (A) has a repeating unit represented by the general formula (P1), the resin (A) after deprotection has a high affinity with conventional developers such as butyl acetate. Development using such a developer increases the solubility of film regions not intended to be removed by development in the developer, potentially resulting in performance degradation. In the present invention, an organic processing solution containing butyl acetate and a hydrocarbon having from 9 to 12 carbon atoms is used as the developer, thereby reducing the affinity of the resin (A) after deprotection with the developer and achieving an appropriate dissolution rate in the developer. Furthermore, the use of the organic processing solution suppresses penetration and swelling of the developer into the film. These factors are thought to significantly improve sensitivity, resolution, and roughness performance.

[0041] Each of the above steps will be described in detail below.

[0042] [Step (1)] Step (1) is a step of forming a film using an actinic ray- or radiation-sensitive resin composition containing a resin (A) that contains a repeating unit represented by the above general formula (P1) and whose polarity increases under the action of an acid, a compound (B) that generates an acid upon irradiation with actinic rays or radiation, and a solvent (E). The actinic ray- or radiation-sensitive resin composition used in step (1) is typically a resist composition. The actinic ray- or radiation-sensitive resin composition used in step (1) is also referred to as a "resist composition" for convenience. Furthermore, the film formed using the actinic ray- or radiation-sensitive resin composition in step (1) is typically a resist film. The film formed using the actinic ray- or radiation-sensitive resin composition is also referred to as a "resist film" for convenience. Details of the actinic ray- or radiation-sensitive resin composition used in step (1) will be described later.

[0043] Step (1) is preferably a step of forming a resist film on a substrate using a resist composition.

[0044] A method for forming a resist film on a substrate using a resist composition includes, for example, applying the resist composition to the substrate. If necessary, it is preferable to filter the resist composition before application. The pore size of the filter is preferably 0.1 μm or less, more preferably 0.05 μm or less, and even more preferably 0.03 μm or less. The filter is preferably made of polytetrafluoroethylene, polyethylene, or nylon.

[0045] The resist composition can be applied onto a substrate (e.g., silicon, silicon coated with silicon dioxide, etc.) such as those used in the manufacture of integrated circuit elements by an appropriate application method such as a spinner or coater. Spin application using a spinner is preferred. The rotation speed when spin application using a spinner is preferably 1000 to 3000 rpm (rotations per minute). After application of the resist composition, the substrate may be dried to form a resist film. If necessary, various undercoating films (inorganic film, organic film, anti-reflective film, etc.) may be formed below the resist film.

[0046] An example of a drying method is a method of drying by heating. Heating can be performed by means provided in at least one of a normal exposure machine and a developing machine, and may be performed using a hot plate or the like. The heating temperature is not particularly limited, but is preferably 80 to 150°C, more preferably 80 to 140°C, and even more preferably 80 to 130°C. The heating time is not particularly limited, but is preferably 30 to 1,000 seconds, more preferably 60 to 800 seconds, and even more preferably 60 to 600 seconds.

[0047] The thickness of the resist film is not particularly limited, but is preferably 10 to 120 nm from the viewpoint of forming a finer pattern with higher precision. In particular, when EUV exposure is used, the thickness of the resist film is more preferably 10 to 65 nm, and even more preferably 15 to 50 nm. Furthermore, when ArF immersion exposure is used, the thickness of the resist film is more preferably 10 to 120 nm, and even more preferably 15 to 90 nm.

[0048] A top coat may be formed on the resist film using a top coat composition. It is preferable that the top coat composition does not mix with the resist film and can be uniformly applied to the resist film. The top coat is not particularly limited, and a conventionally known top coat can be formed by a conventionally known method. For example, a top coat can be formed based on the description in paragraphs

[0072] to

[0082] of JP 2014-059543 A. For example, a top coat containing a basic compound such as that described in JP 2013-61648 A is preferably formed on the resist film. Specific examples of basic compounds that may be contained in the top coat include basic compounds that may be contained in the resist composition. It is also preferable that the top coat contain a compound containing at least one group or bond selected from the group consisting of an ether bond, a thioether bond, a hydroxyl group, a thiol group, a carbonyl bond, and an ester bond.

[0049] [Step (2)] Step (2) is a step of exposing the film (resist film) formed in step (1). Examples of exposure methods include irradiating the formed resist film with actinic rays or radiation through a predetermined mask. Examples of actinic rays or radiation include infrared light, visible light, ultraviolet light, far ultraviolet light, extreme ultraviolet light, X-rays, and electron beams, and preferably far ultraviolet light with a wavelength of 250 nm or less, more preferably 220 nm or less, and particularly preferably 1 to 200 nm, specifically KrF excimer laser (248 nm), ArF excimer laser (193 nm), F 2 These include excimer laser (157 nm), EUV (13 nm), X-ray, and electron beam.

[0050] After exposure, it is preferable to bake (heat) the film before developing. Baking promotes the reaction of the exposed areas, resulting in better sensitivity and pattern shape. The heating temperature for baking is not particularly limited, but is preferably 80 to 150°C, more preferably 80 to 140°C, and even more preferably 80 to 130°C. The heating time for baking is not particularly limited, but is preferably 10 to 1,000 seconds, more preferably 10 to 180 seconds, and even more preferably 30 to 120 seconds. Heating can be carried out using a means provided in at least one of a conventional exposure machine and a development machine, and may be carried out using a hot plate or the like. This process is also called post-exposure baking.

[0051] [Step (3)] Step (3) is a step of developing the film exposed in step (2) with an organic processing solution containing butyl acetate and a hydrocarbon having from 9 to 12 carbon atoms. The hydrocarbon having from 9 to 12 carbon atoms contained in the organic processing solution used in step (3) is preferably at least one selected from the group consisting of alkanes, alkenes, alkynes, and cycloalkanes, more preferably an alkane, even more preferably at least one selected from the group consisting of nonane, decane, undecane, and dodecane, particularly preferably at least one selected from the group consisting of undecane and dodecane, and most preferably undecane. The hydrocarbon having from 9 to 12 carbon atoms may contain a structural isomer when such a structural isomer exists, such as undecane or dodecane. The hydrocarbon having from 9 to 12 carbon atoms contained in the organic processing solution may contain only one type, or two or more types.

[0052] The content of hydrocarbons having from 9 to 12 carbon atoms in the organic treatment liquid (the total amount when multiple hydrocarbons having from 9 to 12 carbon atoms are contained) is preferably from 1 to 35 mass %, more preferably from 5 to 30 mass %, and even more preferably from 10 to 25 mass %, based on 100 mass % of the entire organic treatment liquid.

[0053] The organic treatment liquid contains butyl acetate (n-butyl acetate). The content of butyl acetate in the organic treatment liquid is preferably 65% ​​by mass or more and 99% by mass or less, more preferably 70% by mass or more and 95% by mass or less, and even more preferably 75% by mass or more and 90% by mass or less, based on 100% by mass of the entire organic treatment liquid.

[0054] The mass ratio of butyl acetate to hydrocarbons having from 9 to 12 carbon atoms in the organic treatment liquid (butyl acetate content / hydrocarbon content having from 9 to 12 carbon atoms) is preferably 60 / 40 to 95 / 5, more preferably 70 / 30 to 95 / 5, even more preferably 80 / 20 to 90 / 10, and particularly preferably 90 / 10.

[0055] The organic treatment liquid may contain other components in addition to butyl acetate and hydrocarbons having from 9 to 12 carbon atoms. Examples of other components include water, organic solvents other than butyl acetate and hydrocarbons having from 9 to 12 carbon atoms, surfactants, antioxidants, basic compounds, etc. The content of other components in the organic treatment liquid is preferably from 0 to 5% by mass, more preferably from 0 to 1% by mass, even more preferably from 0 to 0.5% by mass, and particularly preferably 0% by mass (i.e., no other components are contained), based on 100% by mass of the entire organic treatment liquid.

[0056] The developing method in step (3) is not particularly limited, but examples include a method in which the resist film is immersed in a tank filled with a developer (the organic processing liquid) for a certain period of time (dip method), a method in which the developer is raised on the surface of the resist film by surface tension and then left stationary for a certain period of time for development (puddle method), a method in which the developer is sprayed onto the surface of the resist film (spray method), and a method in which the developer is continuously dispensed onto a substrate rotating at a constant speed while a developer dispense nozzle is scanned at a constant speed (dynamic dispense method). Furthermore, after the development step, a step of stopping development while replacing the solvent with another solvent may be carried out. The development time is not particularly limited as long as it is long enough to sufficiently dissolve the resin in the area to be removed, and is preferably 10 to 300 seconds, more preferably 20 to 120 seconds. The temperature of the developer is not particularly limited, but is preferably 0 to 50°C, more preferably 15 to 35°C.

[0057] By carrying out step (3), a resist pattern (also simply referred to as a "pattern") is formed. After carrying out step (3), rinsing may be carried out. Rinsing may be carried out using the organic treatment liquid described above, or a rinse liquid other than the organic treatment liquid described above. The rinse liquid other than the organic treatment liquid described above is not particularly limited as long as it does not dissolve the pattern, and a solution containing a general organic solvent may be used. The rinse liquid other than the organic treatment liquid described above preferably contains at least one organic solvent selected from the group consisting of hydrocarbon solvents, ketone solvents, ester solvents, alcohol solvents, amide solvents, and ether solvents.

[0058] The rinsing method is not particularly limited, and examples thereof include a method in which a rinse liquid is continuously discharged onto a substrate rotating at a constant speed (spin coating method), a method in which a substrate is immersed in a tank filled with the rinse liquid for a certain period of time (dip method), and a method in which a rinse liquid is sprayed onto the surface of the substrate (spray method).

[0059] The pattern formation method of the present invention may also include a heating step (post-bake) after step (3). This step removes the developer and rinse solution remaining between and within the pattern. This step also has the effect of annealing the resist pattern and improving the surface roughness of the pattern. The heating step after step (3) may be performed, for example, at 40 to 250°C (preferably 90 to 200°C) for 10 seconds to 3 minutes (preferably 30 to 120 seconds).

[0060] Alternatively, the substrate may be etched using the formed pattern as a mask. That is, the substrate (or the underlayer film and the substrate) may be processed using the pattern formed in step (3) as a mask to form a pattern on the substrate. The method for processing the substrate (or the underlayer film and the substrate) is not particularly limited, but a method of forming a pattern on the substrate by dry etching the substrate (or the underlayer film and the substrate) using the pattern formed in step (3) as a mask is preferred. The dry etching is not particularly limited, but oxygen plasma etching is preferred.

[0061] The organic processing liquid, resist composition, and other various materials (e.g., solvent, rinse solution, anti-reflective coating composition, top coat composition, etc.) used in the pattern formation method of the present invention preferably do not contain impurities such as metals. The content of impurities contained in these materials is preferably 1 mass ppm (parts per million) or less, more preferably 10 mass ppb (parts per billion) or less, even more preferably 100 mass ppt (parts per trillion) or less, particularly preferably 10 mass ppt or less, and most preferably 1 mass ppt or less. The lower limit of the impurity content is not particularly limited, and may be 0 mass ppt or more. Here, examples of metal impurities include Na, K, Ca, Fe, Cu, Mg, Al, Li, Cr, Ni, Sn, Ag, As, Au, Ba, Cd, Co, Pb, Ti, V, W, and Zn.

[0062] Examples of methods for removing impurities such as metals from various materials include filtration using a filter. Details of filtration using a filter are described in paragraph

[0321] of WO 2020 / 004306.

[0063] Methods for reducing impurities such as metals contained in various materials include, for example, selecting raw materials with a low metal content as raw materials for the various materials, filtering the raw materials for the various materials, and performing distillation under conditions that minimize contamination as much as possible, for example by lining the inside of the apparatus with Teflon (registered trademark).

[0064] In addition to filter filtration, impurities may be removed using an adsorbent, or a combination of filter filtration and an adsorbent may be used. Known adsorbents can be used as the adsorbent, including inorganic adsorbents such as silica gel and zeolite, and organic adsorbents such as activated carbon. In order to reduce impurities such as metals contained in the various materials, it is necessary to prevent the incorporation of metal impurities during the manufacturing process. Whether metal impurities have been sufficiently removed from the manufacturing equipment can be confirmed by measuring the content of metal components contained in the cleaning solution used to clean the manufacturing equipment. The content of metal components contained in the used cleaning solution is preferably 100 ppt by mass or less, more preferably 10 ppt by mass or less, and even more preferably 1 ppt by mass or less. There is no particular lower limit, and a content of 0 ppt by mass or more is preferred.

[0065] A conductive compound may be added to the organic processing solution and rinse solution to prevent breakdown of the chemical solution piping and various parts (filters, O-rings, tubes, etc.) due to static charging and subsequent electrostatic discharge. The conductive compound is not particularly limited, but examples include methanol. The amount added is not particularly limited, but in terms of maintaining favorable development characteristics or rinsing characteristics, it is preferably 10% by mass or less, more preferably 5% by mass or less. The lower limit of the amount of the conductive compound added is not particularly limited, and may be 0.01% by mass or more. For the chemical solution piping, for example, stainless steel (SUS), or various piping coated with antistatically treated polyethylene, polypropylene, or fluororesin (such as polytetrafluoroethylene or perfluoroalkoxy resin), can be used. Similarly, for the filters and O-rings, antistatically treated polyethylene, polypropylene, or fluororesin (such as polytetrafluoroethylene or perfluoroalkoxy resin), can be used.

[0066] [Actinic ray-sensitive or radiation-sensitive resin composition] The actinic ray-sensitive or radiation-sensitive resin composition used in step (1) will be described. The actinic ray-sensitive or radiation-sensitive resin composition (resist composition) used in step (1) contains a resin (A) whose polarity increases under the action of an acid and which contains a repeating unit represented by the following general formula (P1), a compound (B) that generates an acid upon irradiation with actinic rays or radiation, and a solvent (E).

[0067] The resist composition may be a positive resist composition or a negative resist composition, but is preferably a negative resist composition. Furthermore, the resist composition is preferably a resist composition for organic solvent development. The resist composition may be a chemically amplified resist composition or a non-chemically amplified resist composition, but is preferably a chemically amplified resist composition. In the pattern forming method of the present invention, typically, a negative pattern is suitably formed when an organic developer is used as the developer.

[0068] [Resin (A)] The resist composition contains a resin (A) (also simply referred to as "resin (A)") that contains a repeating unit represented by the following general formula (P1) and whose polarity increases under the action of an acid.

[0069] (Repeating Unit Represented by General Formula (P1)) The resin (A) has a repeating unit represented by the following general formula (P1).

[0070]

[0071] In general formula (P1), R A represents a hydrogen atom or an alkyl group having 1 to 5 carbon atoms. 1 represents a single bond or a divalent linking group. 1 represents a single bond or a divalent linking group. Ra represents a group that leaves when acted upon by an acid. Rb represents a hydrogen atom or a chain hydrocarbon group. m represents an integer of 0 to 3. n represents an integer of 1 or greater, provided that n≦m×2+4 is satisfied. When n represents an integer of 2 or greater, multiple Rb's may be the same or different.

[0072] The repeating unit represented by general formula (P1) is a repeating unit having a group that decomposes under the action of an acid to increase its polarity (also referred to as an "acid-decomposable group"). Specifically, it is a repeating unit having an acid-decomposable group in which a carboxyl group as a polar group is protected by a group that is released by the action of an acid, represented by Ra.

[0073] R A represents a hydrogen atom or an alkyl group having 1 to 5 carbon atoms. A Examples of the alkyl group having 1 to 5 carbon atoms represented by include a linear or branched alkyl group such as a methyl group, an ethyl group, an n-propyl group, an i-propyl group, an n-butyl group, an i-butyl group, a t-butyl group, a pentyl group, an i-pentyl group, and a neopentyl group.

[0074] R A may have a halogen atom such as a fluorine atom, a chlorine atom, a bromine atom or an iodine atom as a substituent, and preferably has a fluorine atom.

[0075] R A preferably represents a hydrogen atom or a methyl group.

[0076] L 1 represents a single bond or a divalent linking group. 1 The divalent linking group represented by is not particularly limited, and examples thereof include divalent hydrocarbon groups and divalent linking groups containing a heteroatom. The divalent hydrocarbon group may be an aliphatic hydrocarbon group or an aromatic hydrocarbon group. Furthermore, it may be a saturated hydrocarbon group or an unsaturated hydrocarbon group. Examples of the hydrocarbon group include linear or branched alkylene groups, cycloalkylene groups, and arylene groups. Examples of heteroatoms in divalent linking groups containing a heteroatom include O, N, and S. Preferred examples of the divalent linking group include divalent hydrocarbon groups having 1 to 10 carbon atoms, -C(=O)O-, -OC(=O)-, -O-, and groups formed by combining these.

[0077] L 1is preferably a single bond, a linear alkylene group having 1 to 10 carbon atoms, —C(═O)O—, —OC(═O)—, or a group formed by combining these, more preferably a single bond, —C(═O)O—, or —OC(═O)—, and even more preferably a single bond.

[0078] Y 1 represents a single bond or a divalent linking group. 1 The divalent linking group represented by is not particularly limited, and examples thereof include divalent hydrocarbon groups and divalent linking groups containing a heteroatom. The divalent hydrocarbon group may be an aliphatic hydrocarbon group or an aromatic hydrocarbon group. Furthermore, it may be a saturated hydrocarbon group or an unsaturated hydrocarbon group. Examples of the hydrocarbon group include linear or branched alkylene groups, cycloalkylene groups, and arylene groups. Examples of heteroatoms in divalent linking groups containing a heteroatom include O, N, and S. Preferred examples of the divalent linking group include divalent hydrocarbon groups having 1 to 10 carbon atoms, -C(=O)O-, -OC(=O)-, -O-, and groups formed by combining these.

[0079] Y 1 is preferably a single bond, a linear or branched alkylene group having 1 to 10 carbon atoms, an arylene group having 6 to 10 carbon atoms, -C(=O)O-, -OC(=O)-, -O-, or a group formed by combining these, more preferably a single bond, a linear alkylene group having 1 to 10 carbon atoms, -C(=O)O-, -OC(=O)-, or a group formed by combining these, and even more preferably a single bond.

[0080] Ra represents a group which is eliminated by the action of an acid. Examples of the group which is eliminated by the action of an acid represented by Ra include groups represented by formulas (Y1) to (Y4) described later and -C(Ry 1 ) (Ry 2 ) (Ry 3 ) groups represented by the formula (I) are exemplified.

[0081] Ra preferably contains a cyclic structure, and more preferably is a group represented by the following general formula (1A).

[0082]

[0083] In general formula (1A), R G1 ~R G2 R each independently represents an alkyl group or an alkenyl group, and are bonded to each other to form an alicyclic hydrocarbon group having 3 to 20 carbon atoms together with the carbon atom to which they are bonded. G3 represents an alkyl group, a cycloalkyl group, an alkenyl group, or an aryl group. * represents a bond.

[0084] R G1 ~R G2 Examples of the alkyl group represented by R include linear or branched alkyl groups having 1 to 10 carbon atoms, and alkyl groups having 1 to 5 carbon atoms such as methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, and t-butyl groups are preferred. G1 ~R G2 The alkenyl group represented by may be a straight or branched alkenyl group having 2 to 10 carbon atoms, and a vinyl group is preferred.

[0085] R G1 and R G2 The alicyclic hydrocarbon group having 3 to 20 carbon atoms formed by bonding together with the carbon atoms to which they are bonded is preferably a cycloalkyl group having 3 to 20 carbon atoms. The cycloalkyl group is preferably a monocyclic cycloalkyl group such as a cyclopentyl group or a cyclohexyl group, or a polycyclic cycloalkyl group such as a norbornyl group, a tetracyclodecanyl group, a tetracyclododecanyl group, or an adamantyl group, and more preferably a monocyclic cycloalkyl group having 5 to 6 carbon atoms. G1 and R G2 In the cycloalkyl group formed by bonding of the above, one of the methylene groups constituting the ring may be replaced by a heteroatom such as an oxygen atom, a group containing a heteroatom such as a carbonyl group, or a vinylidene group. In these cycloalkyl groups, one or more of the ethylene groups constituting the cycloalkane ring may be replaced by a vinylene group.

[0086] R G3 The alkyl group and alkenyl group represented by the above R G1 ~R G2The preferred examples are also the same. G3 Examples of the cycloalkyl group represented by R include cycloalkyl groups having 3 to 20 carbon atoms, and preferred are monocyclic cycloalkyl groups such as cyclopentyl and cyclohexyl groups, and polycyclic cycloalkyl groups such as norbornyl, tetracyclodecanyl, tetracyclododecanyl, and adamantyl groups. G3 The aryl group represented by is preferably an aryl group having 6 to 14 carbon atoms, and examples thereof include a phenyl group, a naphthyl group, and an anthryl group.

[0087] It is also preferable that Ra is a group represented by the following general formula (1B).

[0088]

[0089] In general formula (1B), R H1 ~R H3 each independently represents an alkyl group, a cycloalkyl group, an alkenyl group, or an aryl group. H1 ~R H3 At least one of R represents an alkenyl group. H1 and R H2 may be bonded to each other to form, together with the carbon atoms to which they are bonded, an alicyclic hydrocarbon group having 3 to 20 carbon atoms. * represents a bond.

[0090] R H1 ~R H3 The alkyl group, cycloalkyl group, alkenyl group, and aryl group represented by R G3 Examples of the alkyl group, cycloalkyl group, alkenyl group, and aryl group include those represented by the formula:

[0091] R H1 and R H2are preferably bonded to each other to form an alicyclic hydrocarbon group having 3 to 20 carbon atoms together with the carbon atoms to which they are bonded. The alicyclic hydrocarbon group preferably represents a cycloalkyl group having 3 to 20 carbon atoms. The cycloalkyl group is preferably a monocyclic cycloalkyl group such as a cyclopentyl group or a cyclohexyl group, or a polycyclic cycloalkyl group such as a norbornyl group, a tetracyclodecanyl group, a tetracyclododecanyl group, or an adamantyl group, and more preferably a monocyclic cycloalkyl group having 5 to 6 carbon atoms. H1 and R H2 In the cycloalkyl group formed by bonding of the above, one of the methylene groups constituting the ring may be replaced by a heteroatom such as an oxygen atom, a group containing a heteroatom such as a carbonyl group, or a vinylidene group. In these cycloalkyl groups, one or more of the ethylene groups constituting the cycloalkane ring may be replaced by a vinylene group.

[0092] In general formula (1B), R H1 and R H2 are bonded to each other to form an alicyclic hydrocarbon group having 3 to 20 carbon atoms together with the carbon atoms to which they are bonded, and R H3 It is particularly preferred that represents an alkenyl group.

[0093] It is also preferable that Ra is a group represented by the following general formula (1C).

[0094]

[0095] In general formula (1C), C J1 represents a carbon atom. J2 represents a hydrogen atom or an alkyl group. J3 is C J1 and R 1 and R 2 form a monocyclic aliphatic group together.

[0096] R J2 Examples of the alkyl group represented by R include linear or branched alkyl groups having 1 to 10 carbon atoms, and alkyl groups having 1 to 6 carbon atoms such as methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, and t-butyl are preferred, and alkyl groups having 1 to 4 carbon atoms are more preferred. J3is C J1 The monocyclic aliphatic group formed together with J1 The bond between the carbon atom at the α-position and the carbon atom at the β-position of R is a double bond. The number of carbon atoms in the monocyclic aliphatic group is not particularly limited, but is preferably 3 to 12, more preferably 4 to 10, even more preferably 4 to 8, and particularly preferably 5 to 7. J2 is preferably a hydrogen atom or a linear alkyl group, more preferably a hydrogen atom or a linear alkyl group having 1 to 4 carbon atoms, and further preferably a hydrogen atom, a methyl group, or an ethyl group.

[0097] Rb represents a hydrogen atom or a chain hydrocarbon group. The chain hydrocarbon group represented by Rb is preferably a linear or branched alkyl group. Examples of the linear or branched alkyl group include linear or branched alkyl groups having 1 to 5 carbon atoms, such as a methyl group, an ethyl group, an n-propyl group, an i-propyl group, an n-butyl group, an i-butyl group, a t-butyl group, a pentyl group, an i-pentyl group, and a neopentyl group. Rb is preferably a hydrogen atom or a methyl group, and more preferably a hydrogen atom from the viewpoint of improving sensitivity and resolution.

[0098] m represents an integer of 0 to 3, preferably 0 or 1, and from the viewpoint of improving sensitivity and resolution, more preferably 0. n represents an integer of 1 or more, preferably 1.

[0099] The repeating unit represented by formula (P1) is preferably a repeating unit represented by the following formula (P2).

[0100]

[0101] In general formula (P2), R A represents a hydrogen atom or an alkyl group having 1 to 5 carbon atoms. 1 represents a single bond or a divalent linking group. Ra represents a group which is cleaved by the action of an acid.

[0102] R in general formula (P2) A , L 1 , and Ra is R in general formula (P1). A , L 1, and Ra, and preferred examples thereof are also the same.

[0103] Specific examples of the repeating unit represented by formula (P1) are shown below, but the present invention is not limited to these.

[0104]

[0105] The content of the repeating unit represented by general formula (P1) is preferably 40 mol% or more, more preferably 50 mol% or more, and even more preferably 55 mol% or more, based on the total repeating units in the resin (A). The content of the repeating unit represented by general formula (P1) is preferably 80 mol% or less, more preferably 75 mol% or less, and even more preferably 70 mol% or less, based on the total repeating units in the resin (A). The repeating unit represented by general formula (P1) contained in the resin (A) may be one type, or two or more types. When the repeating unit represented by general formula (P1) contained in the resin (A) is two or more types, it is preferable that the total content thereof is within the above-mentioned preferred content range.

[0106] (Other repeating units having an acid-decomposable group) The resin (A) may contain a repeating unit having an acid-decomposable group other than the repeating unit represented by the general formula (P1) above. As the repeating unit having an acid-decomposable group, in addition to the repeating unit having an acid-decomposable group described below, a repeating unit having an acid-decomposable group containing an unsaturated bond is preferred.

[0107] The acid-decomposable group is a group that decomposes under the action of an acid and increases in polarity. The acid-decomposable group is typically a group that decomposes under the action of an acid to generate a polar group. The acid-decomposable group preferably has a structure in which the polar group is protected by a group (leaving group) that leaves under the action of an acid. It is preferable that the polarity of the resin (A) increases under the action of an acid, and the solubility in organic solvents decreases. Examples of the polar group include acidic groups such as a carboxy group, a phenolic hydroxyl group, a fluorinated alcohol group, a sulfonic acid group, a phosphate group, a sulfonamide group, a sulfonylimide group, a (alkylsulfonyl)(alkylcarbonyl)methylene group, a (alkylsulfonyl)(alkylcarbonyl)imide group, a bis(alkylcarbonyl)methylene group, a bis(alkylcarbonyl)imide group, a bis(alkylsulfonyl)methylene group, a bis(alkylsulfonyl)imide group, a tris(alkylcarbonyl)methylene group, and a tris(alkylsulfonyl)methylene group, as well as an alcoholic hydroxyl group. Of these, the polar group is preferably a carboxyl group, a phenolic hydroxyl group, a fluorinated alcohol group (preferably a hexafluoroisopropanol group), or a sulfonic acid group.

[0108] Examples of the group that is eliminated by the action of an acid include groups represented by formulae (Y1) to (Y4). Formula (Y1): —C(Rx 1 ) (Rx 2 ) (Rx 3 ) Formula (Y2): -C(=O)OC(Rx 1 ) (Rx 2 ) (Rx 3 ) Formula (Y3): -C(R 36 ) (R 37 ) (OR 38 ) Formula (Y4): -C(Rn)(H)(Ar)

[0109] In formula (Y1) and formula (Y2), Rx 1 ~Rx 3 Rx each independently represents an alkyl group (linear or branched), a cycloalkyl group (monocyclic or polycyclic), an alkenyl group (linear or branched), an alkynyl group (linear or branched), or an aryl group (monocyclic or polycyclic). 1 ~Rx 3When all of Rx are alkyl groups (linear or branched), 1 ~Rx 3 At least two of Rx are preferably methyl groups. 1 ~Rx 3 each independently preferably represents a linear or branched alkyl group, and Rx 1 ~Rx 3 More preferably, Rx each independently represents a linear alkyl group. 1 ~Rx 3 may be bonded to form a monocyclic or polycyclic ring. 1 ~Rx 3 The alkyl group of Rx is preferably an alkyl group having 1 to 5 carbon atoms, such as a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, an isobutyl group, or a t-butyl group. 1 ~Rx 3 The cycloalkyl group of Rx is preferably a monocyclic cycloalkyl group such as a cyclopentyl group or a cyclohexyl group, or a polycyclic cycloalkyl group such as a norbornyl group, a tetracyclodecanyl group, a tetracyclododecanyl group, or an adamantyl group. 1 ~Rx 3 The aryl group in Rx is preferably an aryl group having 6 to 10 carbon atoms, and examples thereof include a phenyl group, a naphthyl group, and an anthryl group. 1 ~Rx 3 The alkenyl group in Rx is preferably an alkenyl group having 2 to 6 carbon atoms, and more preferably a vinyl group. 1 ~Rx 3 The alkynyl group in Rx is preferably an alkynyl group having 2 to 6 carbon atoms. Each of the above groups may further have a substituent. 1 ~Rx 3 The ring formed by combining the two is preferably a cycloalkyl group. 1 ~Rx 3The cycloalkyl group formed by bonding the two is preferably a monocyclic cycloalkyl group such as a cyclopentyl group or a cyclohexyl group, or a polycyclic cycloalkyl group such as a norbornyl group, a tetracyclodecanyl group, a tetracyclododecanyl group, or an adamantyl group, and more preferably a monocyclic cycloalkyl group having 5 to 6 carbon atoms. 1 ~Rx 3 In the cycloalkyl group formed by bonding these two, one of the methylene groups constituting the ring may be replaced with a heteroatom such as an oxygen atom, a group containing a heteroatom such as a carbonyl group, or a vinylidene group. In these cycloalkyl groups, one or more of the ethylene groups constituting the cycloalkane ring may be replaced with a vinylene group. The group represented by formula (Y1) or formula (Y2) can be, for example, Rx 1 is a methyl group or an ethyl group, and Rx 2 and Rx 3 and Rx are preferably bonded to form the above-mentioned cycloalkyl group. When the actinic ray-sensitive or radiation-sensitive resin composition is, for example, a resist composition for EUV exposure, 1 ~Rx 3 an alkyl group, a cycloalkyl group, an alkenyl group, an aryl group, and Rx 1 ~Rx 3 The ring formed by bonding these two groups preferably further has a fluorine atom or an iodine atom as a substituent.

[0110] In formula (Y3), R 36 ~R 38 R each independently represents a hydrogen atom or a monovalent organic group. 37 and R 38 may be bonded to each other to form a ring. Examples of the monovalent organic group include an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group, and an alkenyl group. 36is also preferably a hydrogen atom. The alkyl group, cycloalkyl group, aryl group, and aralkyl group may contain a heteroatom such as an oxygen atom and / or a group containing a heteroatom such as a carbonyl group. For example, in the alkyl group, cycloalkyl group, aryl group, and aralkyl group, one or more methylene groups may be replaced with a heteroatom such as an oxygen atom and / or a group containing a heteroatom such as a carbonyl group. R 38 may bond with another substituent on the main chain of the repeating unit to form a ring. 38 The group formed by bonding together R and another substituent on the main chain of the repeating unit is preferably an alkylene group such as a methylene group. 36 ~R 38 and a monovalent organic group represented by R 37 and R 38 It is also preferable that the ring formed by bonding these groups together further has a fluorine atom or an iodine atom as a substituent.

[0111] Formula (Y3) is preferably a group represented by the following formula (Y3-1).

[0112]

[0113] Here, L Y1 and L Y2 each independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group, or a group formed by combining these (for example, a group formed by combining an alkyl group and an aryl group). Y1 represents a single bond or a divalent linking group. Y1represents an alkyl group which may contain a heteroatom, a cycloalkyl group which may contain a heteroatom, an aryl group which may contain a heteroatom, an amino group, an ammonium group, a mercapto group, a cyano group, an aldehyde group, or a group which combines these (for example, a group which combines an alkyl group and a cycloalkyl group). In the alkyl group and the cycloalkyl group, for example, one of the methylene groups may be replaced with a heteroatom such as an oxygen atom, or a group which contains a heteroatom such as a carbonyl group. Y1 and L Y2 Preferably, one of Q is a hydrogen atom, and the other is an alkyl group, a cycloalkyl group, an aryl group, or a group in which an alkylene group and an aryl group are combined. Y1 , M Y1 , and L Y1 At least two of the groups may be bonded to form a ring (preferably a 5- or 6-membered ring). Y2 is preferably a secondary or tertiary alkyl group, and more preferably a tertiary alkyl group. Examples of secondary alkyl groups include an isopropyl group, a cyclohexyl group, and a norbornyl group, and examples of tertiary alkyl groups include a tert-butyl group and an adamantane group. In these embodiments, the Tg (glass transition temperature) and activation energy are high, thereby ensuring film strength and suppressing fogging. In formula (Y3-1), * represents a bonding position.

[0114] In formula (Y4), Ar represents an aromatic ring group. Rn represents an alkyl group, a cycloalkyl group, or an aryl group. Rn and Ar may be bonded to each other to form a non-aromatic ring. Ar is preferably an aryl group.

[0115] In terms of excellent acid decomposition properties of the repeating unit, when a non-aromatic ring is directly bonded to the polar group (or a residue thereof) in the leaving group protecting the polar group, it is also preferable that the ring atom in the non-aromatic ring adjacent to the ring atom directly bonded to the polar group (or a residue thereof) does not have a halogen atom such as a fluorine atom as a substituent.

[0116] The group that is eliminated by the action of an acid may also be a 2-cyclopentenyl group having a substituent (such as an alkyl group), such as a 3-methyl-2-cyclopentenyl group, or a cyclohexyl group having a substituent (such as an alkyl group), such as a 1,1,4,4-tetramethylcyclohexyl group.

[0117] The repeating unit having an acid-decomposable group is also preferably a repeating unit represented by formula (A).

[0118]

[0119] L 1 represents a divalent linking group which may have a fluorine atom or an iodine atom, R 1 represents a hydrogen atom, a fluorine atom, an iodine atom, an alkyl group which may have a fluorine atom or an iodine atom, or an aryl group which may have a fluorine atom or an iodine atom; R 2 represents a leaving group which is eliminated by the action of an acid and may have a fluorine atom or an iodine atom. 1 , R 1 , and R 2 At least one of L has a fluorine atom or an iodine atom. 1 Examples of the divalent linking group which may have a fluorine atom or an iodine atom and is represented by the formula: 2 -, hydrocarbon groups which may have a fluorine atom or an iodine atom (for example, alkylene groups, cycloalkylene groups, alkenylene groups, arylene groups, etc.), and linking groups in which a plurality of these groups are linked together. 1As the alkylene group, -CO-, an arylene group, or -arylene group-alkylene group having a fluorine atom or an iodine atom- is preferred, and -CO- or -arylene group-alkylene group having a fluorine atom or an iodine atom- is more preferred. As the arylene group, a phenylene group is preferred. The alkylene group may be linear or branched. The number of carbon atoms in the alkylene group is not particularly limited, but is preferably 1 to 10, and more preferably 1 to 3. The total number of fluorine atoms and iodine atoms contained in the alkylene group having a fluorine atom or an iodine atom is not particularly limited, but is preferably 2 or more, more preferably 2 to 10, and even more preferably 3 to 6.

[0120] R 1 The alkyl group represented by R may be linear or branched. The number of carbon atoms in the alkyl group is not particularly limited, but is preferably 1 to 10, and more preferably 1 to 3. 1 The total number of fluorine atoms and iodine atoms contained in the alkyl group having a fluorine atom or an iodine atom, represented by the formula (I), is not particularly limited, but is preferably 1 or more, more preferably 1 to 5, and even more preferably 1 to 3. 1 The alkyl group represented by the formula (I) may contain a heteroatom other than a halogen atom, such as an oxygen atom.

[0121] R 2 Examples of the leaving group represented by the formulae (Y1) to (Y4) above and which may have a fluorine atom or an iodine atom include leaving groups represented by the formulae (Y1) to (Y4) above and which have a fluorine atom or an iodine atom.

[0122] The repeating unit having an acid-decomposable group is also preferably a repeating unit represented by formula (AI).

[0123]

[0124] In formula (AI), Xa 1 represents a hydrogen atom or an alkyl group which may have a substituent. T represents a single bond or a divalent linking group. Rx 1 ~Rx 3each independently represents an alkyl group (linear or branched), a cycloalkyl group (monocyclic or polycyclic), an alkenyl group (linear or branched), or an aryl group (monocyclic or polycyclic). 1 ~Rx 3 When all of Rx are alkyl groups (linear or branched), 1 ~Rx 3 Preferably, at least two of Rx are methyl groups. 1 ~Rx 3 may be bonded to form a monocyclic or polycyclic ring (such as a monocyclic or polycyclic cycloalkyl group).

[0125] Xa 1 Examples of the alkyl group represented by the formula (I) which may have a substituent include a methyl group or —CH 2 -R 11 Examples of the group include a group represented by the following formula: 11 represents a halogen atom (such as a fluorine atom), a hydroxyl group, or a monovalent organic group. 11 Examples of the monovalent organic group represented by the formula (I) include an alkyl group having 5 or less carbon atoms which may be substituted with a halogen atom, an acyl group having 5 or less carbon atoms which may be substituted with a halogen atom, and an alkoxy group having 5 or less carbon atoms which may be substituted with a halogen atom, and an alkyl group having 3 or less carbon atoms is preferred, and a methyl group is more preferred. 1 is preferably a hydrogen atom, a methyl group, a trifluoromethyl group, or a hydroxymethyl group.

[0126] Examples of the divalent linking group for T include an alkylene group, an aromatic ring group, a -COO-Rt- group, and a -O-Rt- group. In the formula, Rt represents an alkylene group or a cycloalkylene group. T is preferably a single bond or a -COO-Rt- group. When T represents a -COO-Rt- group, Rt is preferably an alkylene group having 1 to 5 carbon atoms, and is preferably a -CH 2 - group, -(CH 2 ) 2 - group or -(CH 2 ) 3 The - group is more preferred.

[0127] Rx 1 ~Rx 3The alkyl group of Rx is preferably an alkyl group having 1 to 4 carbon atoms, such as a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, an isobutyl group, or a t-butyl group. 1 ~Rx 3 The cycloalkyl group of Rx is preferably a monocyclic cycloalkyl group such as a cyclopentyl group or a cyclohexyl group, or a polycyclic cycloalkyl group such as a norbornyl group, a tetracyclodecanyl group, a tetracyclododecanyl group, or an adamantyl group. 1 ~Rx 3 The aryl group in Rx is preferably an aryl group having 6 to 10 carbon atoms, and examples thereof include a phenyl group, a naphthyl group, and an anthryl group. 1 ~Rx 3 The alkenyl group of Rx is preferably a vinyl group. 1 ~Rx 3 As the cycloalkyl group formed by combining the above two, a monocyclic cycloalkyl group such as a cyclopentyl group or a cyclohexyl group is preferred. Polycyclic cycloalkyl groups such as a norbornyl group, a tetracyclodecanyl group, a tetracyclododecanyl group, and an adamantyl group are also preferred. Among these, a monocyclic cycloalkyl group having 5 to 6 carbon atoms is preferred. Rx 1 ~Rx 3 The cycloalkyl group formed by bonding these two may have, for example, one of the methylene groups constituting the ring replaced with a heteroatom such as an oxygen atom, a group containing a heteroatom such as a carbonyl group, or a vinylidene group. Furthermore, in these cycloalkyl groups, one or more of the ethylene groups constituting the cycloalkane ring may be replaced with a vinylene group. The repeating unit represented by formula (AI) can be, for example, Rx 1 is a methyl group or an ethyl group, and Rx 2 and Rx 3 and are preferably bonded to form the above-mentioned cycloalkyl group.

[0128] When each of the above groups has a substituent, examples of the substituent include an alkyl group (having 1 to 4 carbon atoms), a halogen atom, a hydroxyl group, an alkoxy group (having 1 to 4 carbon atoms), a carboxyl group, and an alkoxycarbonyl group (having 2 to 6 carbon atoms). The number of carbon atoms in the substituent is preferably 8 or less.

[0129] The repeating unit represented by formula (AI) may be an acid-decomposable (meth)acrylic acid tertiary alkyl ester repeating unit (Xa 1 represents a hydrogen atom or a methyl group, and T represents a single bond).

[0130] The resin (A) may have a repeating unit having an acid-decomposable group containing an unsaturated bond as a repeating unit having an acid-decomposable group. As the repeating unit having an acid-decomposable group containing an unsaturated bond, a repeating unit represented by formula (B) is preferred.

[0131]

[0132] In formula (B), Xb represents a hydrogen atom, a halogen atom, or an alkyl group which may have a substituent. L represents a single bond or a divalent linking group which may have a substituent. Ry 1 ~Ry 3 each independently represents a linear or branched alkyl group, a monocyclic or polycyclic cycloalkyl group, an alkenyl group, an alkynyl group, or a monocyclic or polycyclic aryl group, provided that Ry 1 ~Ry 3 At least one of R represents an alkenyl group, an alkynyl group, a monocyclic or polycyclic cycloalkenyl group, or a monocyclic or polycyclic aryl group. 1 ~Ry 3 may be bonded to form a monocyclic or polycyclic ring (such as a monocyclic or polycyclic cycloalkyl group or cycloalkenyl group).

[0133] The alkyl group represented by Xb, which may have a substituent, is, for example, a methyl group or —CH 2 -R 11 Examples of the group include a group represented by the following formula: 11represents a halogen atom (such as a fluorine atom), a hydroxyl group, or a monovalent organic group, and examples thereof include an alkyl group having 5 or less carbon atoms which may be substituted with a halogen atom, an acyl group having 5 or less carbon atoms which may be substituted with a halogen atom, and an alkoxy group having 5 or less carbon atoms which may be substituted with a halogen atom, preferably an alkyl group having 3 or less carbon atoms, and more preferably a methyl group. Xb is preferably a hydrogen atom, a fluorine atom, a methyl group, a trifluoromethyl group, or a hydroxymethyl group.

[0134] Examples of the divalent linking group for L include a -Rt- group, a -CO- group, a -COO-Rt- group, a -COO-Rt-CO- group, a -Rt-CO- group, and a -O-Rt- group. In the formula, Rt represents an alkylene group, a cycloalkylene group, or an aromatic ring group, and an aromatic ring group is preferable. L is preferably a -Rt- group, a -CO- group, a -COO-Rt-CO- group, or a -Rt-CO- group. Rt may have a substituent such as a halogen atom, a hydroxyl group, or an alkoxy group.

[0135] Ry 1 ~Ry 3 The alkyl group of Ry is preferably an alkyl group having 1 to 4 carbon atoms, such as a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, an isobutyl group, or a t-butyl group. 1 ~Ry 3 The cycloalkyl group of Ry is preferably a monocyclic cycloalkyl group such as a cyclopentyl group or a cyclohexyl group, or a polycyclic cycloalkyl group such as a norbornyl group, a tetracyclodecanyl group, a tetracyclododecanyl group, or an adamantyl group. 1 ~Ry 3 The aryl group in Ry is preferably an aryl group having 6 to 10 carbon atoms, and examples thereof include a phenyl group, a naphthyl group, and an anthryl group. 1 ~Ry 3 The alkenyl group in Ry is preferably a vinyl group. 1 ~Ry 3 The alkynyl group in Ry is preferably an ethynyl group. 1 ~Ry 3The cycloalkenyl group of Ry is preferably a monocyclic cycloalkyl group such as a cyclopentyl group or a cyclohexyl group, which has a double bond in part thereof. 1 ~Ry 3 The cycloalkyl group formed by combining the above two groups is preferably a monocyclic cycloalkyl group such as a cyclopentyl group or a cyclohexyl group, or a polycyclic cycloalkyl group such as a norbornyl group, a tetracyclodecanyl group, a tetracyclododecanyl group, or an adamantyl group. Among these, a monocyclic cycloalkyl group having 5 to 6 carbon atoms is more preferred. 1 ~Ry 3 The cycloalkyl group or cycloalkenyl group formed by bonding two of the above is, for example, a group in which one of the methylene groups constituting the ring is substituted with a heteroatom such as an oxygen atom, a carbonyl group, or —SO 2 - group and -SO 3 The repeating unit represented by formula (B) may be substituted with a group containing a hetero atom such as a - group, a vinylidene group, or a combination thereof. In addition, in these cycloalkyl groups or cycloalkenyl groups, one or more ethylene groups constituting the cycloalkane ring or cycloalkene ring may be substituted with a vinylene group. 1 is a methyl group, an ethyl group, a vinyl group, an allyl group, or an aryl group, and Ry 2 and Ry 3 and are bonded to form the above-mentioned cycloalkyl group or cycloalkenyl group.

[0136] When each of the above groups has a substituent, examples of the substituent include an alkyl group (having 1 to 4 carbon atoms), a halogen atom, a hydroxyl group, an alkoxy group (having 1 to 4 carbon atoms), a carboxyl group, and an alkoxycarbonyl group (having 2 to 6 carbon atoms). The number of carbon atoms in the substituent is preferably 8 or less.

[0137] The repeating unit represented by formula (B) is preferably an acid-decomposable (meth)acrylic acid tertiary ester repeating unit (a repeating unit in which Xb represents a hydrogen atom or a methyl group and L represents a —CO— group), an acid-decomposable hydroxystyrene tertiary alkyl ether repeating unit (a repeating unit in which Xb represents a hydrogen atom or a methyl group and L represents a phenyl group), or an acid-decomposable styrene carboxylic acid tertiary ester repeating unit (a repeating unit in which Xb represents a hydrogen atom or a methyl group and L represents a —Rt—CO— group (Rt is an aromatic group)).

[0138] Specific examples of repeating units having an acid-decomposable group containing an unsaturated bond include the repeating units described in paragraphs

[0067] to

[0071] of WO 2022 / 024928. The above descriptions are incorporated herein by reference.

[0139] The content of the repeating units having other acid-decomposable groups is preferably 50 mol% or more, more preferably 60 mol% or more, and even more preferably 65 mol% or more, based on the total repeating units in the resin (A). The total content of the repeating units represented by the general formula (P1) and the repeating units having other acid-decomposable groups is preferably 95 mol% or less, more preferably 85 mol% or less, and even more preferably 80 mol% or less, based on the total repeating units in the resin (A). The repeating units having other acid-decomposable groups contained in the resin (A) may be one type or two or more types. When the repeating units having other acid-decomposable groups contained in the resin (A) are two or more types, the total content thereof is preferably within the above-mentioned preferred content range.

[0140] (Repeating Unit Having an Acid Group) From the viewpoint of improving sensitivity and resolution, the resin (A) preferably has an acid group, and particularly preferably contains a repeating unit having an acid group.

[0141] The repeating unit having an acid group may be a repeating unit represented by the above-mentioned general formula (P1) or may be another repeating unit. When the repeating unit having an acid group is a repeating unit represented by the above-mentioned general formula (P1), it is preferable that Rb in general formula (P1) represents a hydrogen atom.

[0142] The acid group is preferably, for example, a carboxyl group, a phenolic hydroxyl group, a fluorinated alcohol group (preferably a hexafluoroisopropanol group), a sulfonic acid group, a sulfonamide group, or an isopropanol group. In the hexafluoroisopropanol group, one or more fluorine atoms (preferably one to two) may be substituted with a group other than a fluorine atom (such as an alkoxycarbonyl group). The acid group may be, for example, a -C(CF 3 )(OH)—CF 2 In addition, one or more fluorine atoms are substituted with a group other than a fluorine atom to form -C(CF 3 )(OH)—CF 2 - may form a ring containing the same. The repeating unit having an acid group is preferably a repeating unit different from the repeating unit having the acid-decomposable group described above. The repeating unit having an acid group may have a fluorine atom or an iodine atom. Specific examples of the repeating unit having an acid group include the repeating units described in

[0088] to

[0089] and

[0103] to

[0110] of WO 2022 / 024928. The above descriptions are incorporated herein by reference.

[0143] The repeating unit having an acid group is preferably a repeating unit having a phenolic hydroxyl group, and the repeating unit having a phenolic hydroxyl group is preferably a repeating unit different from the repeating unit having an acid-decomposable group described above.

[0144] The repeating unit having an acid group is preferably a repeating unit represented by the following formula (Pa1): The resin (A) preferably contains a repeating unit represented by the following formula (Pa1).

[0145]

[0146] In formula (Pa1), R a1 and R a2 each independently represents a hydrogen atom or a substituent. a1 represents a single bond or a divalent linking group. a1 represents an aromatic ring group. a1 And, R a2 or L a1 may be bonded to by a single bond or via a linking group. X represents a substituent other than a hydroxy group. n represents an integer of 1 or more and 9 or less. m represents an integer of 0 or more and 8 or less.

[0147] R in formula (Pa1) a1 and R a2 R each independently represents a hydrogen atom or a substituent. a1 and R a2 The substituent represented by is not particularly limited, but is preferably an alkyl group, a cycloalkyl group, a halogen atom, a cyano group, or an alkoxycarbonyl group. a1 and R a2 The alkyl group represented by may be either linear or branched. The number of carbon atoms in the alkyl group is not particularly limited, but is preferably 1 to 10, more preferably 1 to 5, and particularly preferably 1 to 3. Examples of the alkyl group include a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, an isobutyl group, and a t-butyl group. The alkyl group may have a substituent. R a1 and R a2 The number of carbon atoms in the cycloalkyl group represented by is not particularly limited, but is preferably 3 to 20, and more preferably 5 to 15. The cycloalkyl group may be a monocyclic cycloalkyl group such as a cyclopentyl group or a cyclohexyl group, or a polycyclic cycloalkyl group such as a norbornyl group, a tetracyclodecanyl group, a tetracyclododecanyl group, or an adamantyl group. The cycloalkyl group may have a substituent. R a1 and R a2 Examples of the halogen atom represented by R include a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom, and a fluorine atom or an iodine atom is preferred. a1 and R a2The alkyl group contained in the alkoxycarbonyl group represented by the formula (I) may be either linear or branched. The number of carbon atoms in the alkyl group contained in the alkoxycarbonyl group is not particularly limited, but is preferably 1 to 5, and more preferably 1 to 3. The alkoxycarbonyl group may have a substituent.

[0148] L in formula (Pa1) a1 represents a single bond or a divalent linking group. a1 The divalent linking group represented by is not particularly limited, but examples thereof include —COO—, —CONR a3 -, an alkylene group, or a group formed by combining two or more of these groups. a3 represents a hydrogen atom or an alkyl group. The alkylene group is not particularly limited, but is preferably an alkylene group having 1 to 8 carbon atoms, such as a methylene group, an ethylene group, a propylene group, a butylene group, a hexylene group, or an octylene group. The alkylene group may have a substituent. R a3 When represents an alkyl group, examples of the alkyl group include alkyl groups having 20 or less carbon atoms, such as a methyl group, an ethyl group, a propyl group, an isopropyl group, an n-butyl group, a sec-butyl group, a hexyl group, a 2-ethylhexyl group, an octyl group, and a dodecyl group, and alkyl groups having 8 or less carbon atoms are preferred.

[0149] Ar in formula (Pa1) a1 represents an aromatic ring group, specifically an (m+n+1)-valent aromatic ring group. a1 The aromatic ring group represented by may be an aromatic hydrocarbon group or an aromatic heterocyclic group. The aromatic hydrocarbon group is preferably a group containing an aromatic hydrocarbon having 6 to 18 carbon atoms, such as benzene, naphthalene, anthracene, or naphthacene. The aromatic heterocyclic group preferably contains at least one heteroatom selected from the group consisting of a nitrogen atom, an oxygen atom, and a sulfur atom as a ring member. The aromatic heterocyclic group is preferably a group containing an aromatic heterocycle having 4 to 20 ring atoms, such as thiophene, furan, pyridine, pyrrole, benzothiophene, benzofuran, benzopyrrole, triazine, imidazole, benzimidazole, triazole, thiadiazole, or thiazole.

[0150] Ar a1 And, R a2 or L a1 may be bonded to by a single bond or via a linking group. Examples of the linking group include -O-, -S-, -CO-, -CO 2 -, -SO-, -SO 2 -, alkylene groups (preferably having 1 to 5 carbon atoms), alkenylene groups (preferably having 2 to 5 carbon atoms), and groups formed by combining two or more of these. The alkylene groups and alkenylene groups may have a substituent.

[0151] R in formula (Pa1) X represents a substituent other than a hydroxy group. X Examples of the substituent represented by R include a carboxyl group, a sulfo group, a cyano group, a halogen atom, a hydrocarbon group, an amino group, a nitro group, and a group formed by combining two or more of these. X Examples of the hydrocarbon group represented by R include an alkyl group (preferably having 1 to 10 carbon atoms), a cycloalkyl group (preferably having 5 to 15 carbon atoms), and an alkenyl group (preferably having 2 to 10 carbon atoms). X The substituent represented by R preferably has a halogen atom. The halogen atom is preferably a fluorine atom or an iodine atom, and more preferably an iodine atom. X The hydrocarbon group represented by may have a substituent. X The hydrocarbon group represented by is -CH 2 When it contains -, -CH 2 At least one of - is -O-, -CO-, -S- and -SO 2 - may be replaced with at least one selected from the group consisting of

[0152] In formula (Pa1), n ​​represents an integer of 1 or more and 9 or less, preferably an integer of 1 or more and 5 or less, and more preferably an integer of 1 or more and 4 or less.

[0153] In formula (Pa1), m represents an integer of 0 or more and 8 or less, preferably an integer of 0 or more and 4 or less, and more preferably an integer of 0 or more and 3 or less.

[0154] The repeating unit having an acid group is preferably a repeating unit represented by the following formula (Pa2): The resin (A) preferably contains a repeating unit represented by the following formula (Pa2).

[0155]

[0156] In formula (Pa2), R a4 represents a hydrogen atom or an alkyl group. a2 represents a single bond or —COO—. X1 represents a halogen atom, a haloalkyl group or a hydrocarbon group. n1 represents an integer of 1 or more and 5 or less. m1 represents an integer of 0 or more and 4 or less. r represents an integer of 0 or more and 3 or less.

[0157] R in formula (Pa2) a4 represents a hydrogen atom or an alkyl group. a4 The alkyl group represented by may be either linear or branched. The number of carbon atoms in the alkyl group is not particularly limited, but is preferably 1 to 10, more preferably 1 to 5, and particularly preferably 1 to 3. Examples of the alkyl group include a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, an isobutyl group, and a t-butyl group. The alkyl group may have a substituent.

[0158] L in formula (Pa2) a2 represents a single bond or —COO—, and preferably represents a single bond.

[0159] In formula (Pa2), r represents an integer of 0 or more and 3 or less, preferably an integer of 0 or more and 2 or less, more preferably 0 or 1, and even more preferably 0. In formula (Pa2), the aromatic ring is benzene when r represents 0, naphthalene when r represents 1, anthracene when r represents 2, and naphthacene when r represents 3.

[0160] R in formula (Pa2) X1 represents a halogen atom or a hydrocarbon group. X1 The halogen atom represented by R is preferably a fluorine atom, a chlorine atom, a bromine atom or an iodine atom. X1Examples of the hydrocarbon group represented by R include an alkyl group (preferably having 1 to 10 carbon atoms), a cycloalkyl group (preferably having 5 to 15 carbon atoms), and an alkenyl group (preferably having 2 to 10 carbon atoms). X The hydrocarbon group represented by R preferably has a halogen atom. The halogen atom is preferably a fluorine atom or an iodine atom, and more preferably an iodine atom. X1 The hydrocarbon group represented by may have a substituent. X1 The hydrocarbon group represented by is -CH 2 When it contains -, -CH 2 At least one of - is -O-, -CO-, -S- and -SO 2 - may be replaced with at least one selected from the group consisting of

[0161] In formula (Pa2), n1 represents an integer of 1 or more and 5 or less, and preferably represents an integer of 1 or more and 4 or less.

[0162] In formula (Pa2), m1 represents an integer of 0 or more and 4 or less, and preferably represents an integer of 0 or more and 3 or less.

[0163] Specific examples of repeating units having an acid group are shown below, but are not limited to these. 1 and G 2 each independently represents a hydrogen atom, a methyl group, a fluorine atom, a chlorine atom, a trifluoromethyl group, a cyano group, a hydroxy group, or a hydroxymethyl group. f1 represents an integer of 1 to 3. Also preferred are repeating units having an acid group as described in the examples below.

[0164]

[0165] When the resin (A) contains a repeating unit having an acid group, the content of the repeating unit having an acid group is preferably 10 mol% or more, more preferably 15 mol% or more, based on the total repeating units in the resin (A), and the content of the repeating unit having an acid group is preferably less than 55 mol% and more preferably 45 mol% or less, based on the total repeating units in the resin (A).

[0166] (Repeating Unit Having an Aromatic Ring) The resin (A) preferably has a repeating unit having an aromatic ring. The aromatic ring may be an aromatic hydrocarbon or an aromatic heterocycle. The aromatic hydrocarbon is preferably an aromatic hydrocarbon having 6 to 18 carbon atoms, such as benzene, naphthalene, anthracene, or naphthacene. The aromatic heterocyclic group preferably contains at least one heteroatom selected from the group consisting of a nitrogen atom, an oxygen atom, and a sulfur atom as a ring member. The aromatic heterocycle is preferably an aromatic heterocycle having 4 to 20 ring atoms, such as thiophene, furan, pyridine, pyrrole, benzothiophene, benzofuran, benzopyrrole, triazine, imidazole, benzimidazole, triazole, thiadiazole, or thiazole. The repeating unit having an aromatic ring is not particularly limited, but examples include the repeating unit represented by the above formula (Pa1).

[0167] (Repeating units having neither an acid-decomposable group nor an acid group, and having a fluorine atom, a bromine atom, or an iodine atom) In addition to the above-mentioned <repeating units having an acid-decomposable group> and <repeating units having an acid group>, the resin (A) may have a repeating unit having neither an acid-decomposable group nor an acid group, and having a fluorine atom, a bromine atom, or an iodine atom (hereinafter also referred to as unit X). The <repeating units having neither an acid-decomposable group nor an acid group, and having a fluorine atom, a bromine atom, or an iodine atom> referred to here is preferably different from other types of repeating units belonging to Group A, such as the <repeating units having a lactone group, a sultone group, or a carbonate group> and the <repeating units having a photoacid-generating group> described below.

[0168] The unit X is preferably a repeating unit represented by formula (C).

[0169]

[0170] L 5 represents a single bond or an ester group. 9 represents a hydrogen atom or an alkyl group which may have a fluorine atom or an iodine atom. 10represents a hydrogen atom, an alkyl group which may have a fluorine atom or an iodine atom, a cycloalkyl group which may have a fluorine atom or an iodine atom, an aryl group which may have a fluorine atom or an iodine atom, or a group combining these. Specific examples of repeating units having a fluorine atom or an iodine atom include the repeating units described in paragraphs

[0116] to

[0117] of WO 2022 / 024928. The above descriptions are incorporated herein by reference.

[0171] The content of units X is preferably 0 mol% or more, more preferably 5 mol% or more, and even more preferably 10 mol% or more, based on all repeating units in resin (A), and the upper limit thereof is preferably less than 45 mol% and more preferably 35 mol% or less, based on all repeating units in resin (A).

[0172] Among the repeating units of the resin (A), the total content of repeating units having at least one of a fluorine atom, a bromine atom, and an iodine atom is preferably 10 mol% or more, more preferably 20 mol% or more, even more preferably 30 mol% or more, and particularly preferably 40 mol% or more, based on the total repeating units of the resin (A). The upper limit is not particularly limited, but is, for example, 100 mol% or less, based on the total repeating units of the resin (A). Examples of repeating units having at least one of a fluorine atom, a bromine atom, and an iodine atom include repeating units having a fluorine atom, a bromine atom, or an iodine atom and an acid-decomposable group, repeating units having a fluorine atom, a bromine atom, or an iodine atom and an acid group, and repeating units having a fluorine atom, a bromine atom, or an iodine atom.

[0173] (Repeating unit having a lactone group, a sultone group, or a carbonate group) The resin (A) may have a repeating unit (hereinafter also referred to as "unit Y") having at least one selected from the group consisting of a lactone group, a sultone group, and a carbonate group. It is also preferable that unit Y does not have a hydroxyl group or an acid group such as a hexafluoropropanol group.

[0174] The lactone group or sultone group may have a lactone structure or a sultone structure. The lactone structure or sultone structure is preferably a 5- to 7-membered cyclic lactone structure or a 5- to 7-membered cyclic sultone structure. Among these, a 5- to 7-membered cyclic lactone structure to which another ring structure is fused in the form of a bicyclo or spiro structure, or a 5- to 7-membered cyclic sultone structure to which another ring structure is fused in the form of a bicyclo or spiro structure, is more preferred. Resin (A) preferably has a repeating unit having a lactone group, sultone group, or carbonate group obtained by removing one or more hydrogen atoms from a ring atom of a lactone structure represented by any one of formulas (LC1-1) to (LC1-22) below, a sultone structure represented by any one of formulas (SL1-1) to (SL1-3) below, or a cyclic carbonate ester structure represented by any one of formulas (CC1-1) to (CC1-2) below, and the lactone group, sultone group, or carbonate group may be directly bonded to the main chain. For example, ring atoms of a lactone group, a sultone group, or a carbonate group may constitute the main chain of the resin (A). The lactone group, the sultone group, and the carbonate group may have a substituent.

[0175] R in the following structural formula L represents a substituent. L If there are multiple R L may be the same or different. L Examples of R include an alkyl group having 1 to 8 carbon atoms, a cycloalkyl group having 4 to 10 carbon atoms, an alkoxy group having 1 to 8 carbon atoms, an alkoxycarbonyl group having 2 to 8 carbon atoms, a carboxyl group, a halogen atom, a cyano group, and an acid-decomposable group. e1 represents an integer of 0 to 4. When multiple e1s are present, the multiple e1s may be the same or different. When e1 is 2 or more, the multiple R L may be the same or different, and multiple R L They may be bonded to each other to form a ring.

[0176]

[0177] Examples of repeating units having a lactone group, a sultone group, or a carbonate group include repeating units represented by the following formula (AI-2).

[0178]

[0179] In formula (AI-2), Rb 0 represents a hydrogen atom, a halogen atom, or an alkyl group having 1 to 4 carbon atoms. 0 The alkyl group of Rb may have a substituent. 0 Preferred substituents that the alkyl group of Rb may have include a hydroxyl group and a halogen atom. 0 Examples of the halogen atom in Rb include a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom. 0 is preferably a hydrogen atom or a methyl group. Ab represents a single bond, an alkylene group, a divalent linking group having a monocyclic or polycyclic alicyclic hydrocarbon structure, an ether group, an ester group, a carbonyl group, a carboxyl group, or a divalent linking group formed by combining these. Among these, Ab is preferably a single bond or -Ab 1 -CO 2 A linking group represented by - is preferred. 1 is a linear or branched alkylene group, or a monocyclic or polycyclic cycloalkylene group, and is preferably a methylene group, an ethylene group, a cyclohexylene group, an adamantylene group, or a norbornylene group. V is a group obtained by removing one hydrogen atom from a ring member atom of a lactone structure represented by any of formulas (LC1-1) to (LC1-22), a group obtained by removing one hydrogen atom from a ring member atom of a sultone structure represented by any of formulas (SL1-1) to (SL1-3), or a group obtained by removing one hydrogen atom from a ring member atom of a cyclic carbonate structure represented by any of formulas (CC1-1) to (CC1-2).

[0180] When optical isomers exist in the repeating unit having a lactone group or a sultone group, any optical isomer may be used. One optical isomer may be used alone, or multiple optical isomers may be used in combination. When one optical isomer is primarily used, its optical purity (ee) is preferably 90 or more, more preferably 95 or more.

[0181] The carbonate group is preferably a cyclic carbonate ester group. For repeating units having a cyclic carbonate ester group, see, for example, paragraphs

[0127] to

[0133] of WO 2022 / 024928. The above description is incorporated herein by reference.

[0182] When the resin (A) contains the unit Y, the content of the unit Y is preferably 1 mol % or more, more preferably 10 mol % or more, based on all repeating units in the resin (A), and the upper limit thereof is preferably less than 40 mol % and more preferably 35 mol % or less, based on all repeating units in the resin (A).

[0183] (Repeating unit having a photoacid generating group) The resin (A) may contain a repeating unit having a group that generates an acid upon irradiation with actinic rays or radiation (also referred to as a "photoacid generating group"). Examples of the repeating unit having a photoacid generating group include a repeating unit represented by formula (4).

[0184]

[0185] R 41 represents a hydrogen atom or a methyl group. 41 represents a single bond or a divalent linking group. 42 represents a divalent linking group. 40 represents a structural moiety that decomposes upon irradiation with actinic rays or radiation to generate an acid in the side chain.

[0186] L 41 represents a single bond or a divalent linking group, and preferably represents a single bond or an ester bond (—COO—).

[0187] L 42 represents an alkylene group, a cycloalkylene group, an arylene group, —O—, —CO—, —S—, —SO—, —SO 2Preferably, the linking group is at least one selected from the group consisting of - and -NR-. R represents a hydrogen atom or an organic group (preferably an organic group having 1 to 10 carbon atoms, such as an alkyl group, a cycloalkyl group, or an aryl group). The alkylene group may be either linear or branched. The number of carbon atoms in the alkylene group is not particularly limited, but preferably 1 to 10. The cycloalkylene group may be a monocyclic cycloalkylene group or a polycyclic cycloalkylene group. The number of carbon atoms in the cycloalkylene group is not particularly limited, but preferably 3 to 20, more preferably 5 to 15. The number of carbon atoms in the arylene group is not particularly limited, but preferably 6 to 20, more preferably 6 to 10. The alkylene group, cycloalkylene group, and arylene group may have a substituent, and examples of the substituent include the substituent T described above.

[0188] R 40 is preferably a group represented by the following formula (S4-1).

[0189]

[0190] In formula (S4-1), Q - represents an acid residue, M + represents a cation. * represents L 41 The bond position of the acid residue is a group formed by dissociating a proton from an acid. - is a carboxylate anion group (COO - ), sulfonate anion group (SO 3 - ), or a sulfonamide group (N - -SO 2 R N1 It is expressed as: R N1 represents an organic group, and examples thereof include organic groups having 1 to 10 carbon atoms, and an alkyl group, a fluoroalkyl group, or an aryl group is preferred. ) is preferred, and a sulfonate anion group is more preferred. + The explanation, specific examples and preferred ranges of M in the explanation of the photoacid generator (B) to be described later. + is the same as

[0191] Specific examples of repeating units having a photoacid generating group include the repeating units described in

[0094] to

[0105] of JP 2014-041327 A, the repeating unit described in

[0094] of WO 2018 / 193954 A, and the repeating unit described in

[0138] of WO 2022 / 024928 A. The above descriptions are incorporated herein by reference.

[0192] Examples of the repeating unit represented by formula (4) include the repeating units described in paragraphs

[0094] to

[0105] of JP 2014-041327 A and the repeating unit described in paragraph

[0094] of WO 2018 / 193954 A.

[0193] When the resin (A) contains a repeating unit having a photoacid generating group, the content of the repeating unit having a photoacid generating group is preferably 1 mol% or more, more preferably 3 mol% or more, and particularly preferably 5 mol% or more, based on the total repeating units in the resin (A).Furthermore, the content of the repeating unit having a photoacid generating group is preferably less than 40 mol%, more preferably 30 mol% or less, and particularly preferably 20 mol% or less, based on the total repeating units in the resin (A).It is also preferable that the resin (A) does not contain a repeating unit having a photoacid generating group.

[0194] (Repeating unit represented by formula (V-1) or formula (V-2)) The resin (A) may have a repeating unit represented by the following formula (V-1) or formula (V-2). The repeating units represented by the following formula (V-1) and formula (V-2) are preferably repeating units different from the above-mentioned repeating units.

[0195]

[0196] In the formula, R 6 and R 7each independently represents a hydrogen atom, a hydroxyl group, an alkyl group, an alkoxy group, an acyloxy group, a cyano group, a nitro group, an amino group, a halogen atom, an ester group (-OCOR or -COOR: R is an alkyl group or a fluorinated alkyl group having 1 to 6 carbon atoms), or a carboxyl group. As the alkyl group, a linear, branched or cyclic alkyl group having 1 to 10 carbon atoms is preferred. 3 represents an integer of 0 to 6. 4 represents an integer of 0 to 4. 4 is a methylene group, an oxygen atom, or a sulfur atom. Examples of repeating units represented by formula (V-1) or (V-2) are shown below. Examples of repeating units represented by formula (V-1) or (V-2) include the repeating units described in paragraph

[0100] of WO 2018 / 193954.

[0197] (Repeating Unit for Reducing Mobility of Main Chain) Resin (A) preferably has a high glass transition temperature (Tg) in order to suppress excessive diffusion of generated acid or pattern collapse during development. Tg is preferably higher than 90°C, more preferably higher than 100°C, even more preferably higher than 110°C, and particularly preferably higher than 125°C. In order to achieve an excellent dissolution rate in a developer, Tg is preferably 400°C or lower, more preferably 350°C or lower. In this specification, the glass transition temperature (Tg) of a polymer such as resin (A) (hereinafter referred to as "Tg of repeating unit") is calculated by the following method. First, the Tg of a homopolymer consisting of only each repeating unit contained in the polymer is calculated using the Bicerano method. Next, the mass proportion (%) of each repeating unit relative to all repeating units in the polymer is calculated. Next, the Tg at each mass ratio is calculated using the Fox formula (described in Materials Letters 62 (2008) 3152, etc.), and the sum of these values ​​is used to determine the Tg (°C) of the polymer. The Bicerano method is described in "Prediction of Polymer Properties," Marcel Dekker Inc., New York (1993). Calculation of Tg by the Bicerano method can be performed using polymer property estimation software MDL Polymer (MDL Information Systems, Inc.).

[0198] For the repeating units for reducing the mobility of the main chain, the contents of paragraphs

[0144] to

[0160] of WO 2022 / 024928 are incorporated herein by reference.

[0199] (Repeating unit having at least one group selected from a lactone group, a sultone group, a carbonate group, a hydroxyl group, a cyano group, and an alkali-soluble group) The resin (A) may have a repeating unit having at least one group selected from a lactone group, a sultone group, a carbonate group, a hydroxyl group, a cyano group, and an alkali-soluble group. Examples of the repeating unit having a lactone group, a sultone group, or a carbonate group contained in the resin (A) include the repeating units described above in <Repeating unit having a lactone group, a sultone group, or a carbonate group>. The preferred content is also as described above in <Repeating unit having a lactone group, a sultone group, or a carbonate group>.

[0200] The resin (A) may have a repeating unit having a hydroxyl group or a cyano group. This improves substrate adhesion. The repeating unit having a hydroxyl group or a cyano group is preferably a repeating unit having a saturated hydrocarbon group having a hydroxyl group or a cyano group (substituted with a hydroxyl group or a cyano group). It may also be a repeating unit having an alicyclic hydrocarbon structure substituted with a hydroxyl group or a cyano group. The repeating unit having a hydroxyl group or a cyano group preferably does not have an acid-decomposable group. Examples of repeating units having a hydroxyl group or a cyano group include those described in paragraphs

[0081] to

[0084] of JP 2014-098921 A.

[0201] The resin (A) may have a repeating unit having an alkali-soluble group. Examples of the alkali-soluble group include a carboxyl group, a sulfonamide group, a sulfonylimide group, a bissulfonylimide group, and an aliphatic alcohol group (e.g., a hexafluoroisopropanol group) substituted at the α-position with an electron-withdrawing group, with a carboxyl group being preferred. When the resin (A) contains a repeating unit having an alkali-soluble group, the resolution in contact hole applications is improved. Examples of repeating units having an alkali-soluble group include those described in paragraphs

[0085] and

[0086] of JP 2014-098921 A.

[0202] (Repeating unit having an alicyclic hydrocarbon structure and not exhibiting acid decomposability) Resin (A) may have a repeating unit having an alicyclic hydrocarbon structure and not exhibiting acid decomposability. This can reduce elution of low-molecular-weight components from the resist film into the immersion liquid during immersion exposure. Examples of repeating units having an alicyclic hydrocarbon structure and not exhibiting acid decomposability include repeating units derived from 1-adamantyl(meth)acrylate, diamantyl(meth)acrylate, tricyclodecanyl(meth)acrylate, or cyclohexyl(meth)acrylate.

[0203] (Repeating Unit Represented by Formula (III) Having Neither a Hydroxyl Group nor a Cyano Group) The resin (A) may have a repeating unit represented by formula (III) having neither a hydroxyl group nor a cyano group.

[0204]

[0205] In formula (III), R 5 represents a hydrocarbon group having at least one cyclic structure and having neither a hydroxyl group nor a cyano group. Ra represents a hydrogen atom, an alkyl group, or a —CH 2 -O-Ra 2 represents a group. 2 represents a hydrogen atom, an alkyl group, or an acyl group. Examples of the repeating unit represented by formula (III) that does not have either a hydroxyl group or a cyano group include those described in paragraphs

[0087] to

[0094] of JP 2014-098921 A.

[0206] (Other Repeating Units) Furthermore, the resin (A) may have a repeating unit other than the repeating units described above. For example, the resin (A) may have a repeating unit selected from the group consisting of a repeating unit having an oxathiane ring group, a repeating unit having an oxazolone ring group, a repeating unit having a dioxane ring group, and a repeating unit having a hydantoin ring group.

[0207] In addition to the repeating structural units described above, the resin (A) may have various repeating structural units for the purpose of adjusting dry etching resistance, suitability for a standard developer, substrate adhesion, resist profile, resolution, heat resistance, sensitivity, and the like.

[0208] As the resin (A), particularly when the resist composition is used as an ArF actinic ray-sensitive or radiation-sensitive resin composition, it is preferable that all of the repeating units are composed of repeating units derived from a compound having an ethylenically unsaturated bond.In particular, it is also preferable that all of the repeating units are composed of (meth)acrylate repeating units.When all of the repeating units are composed of (meth)acrylate repeating units, any of those in which all of the repeating units are methacrylate repeating units, all of the repeating units are acrylate repeating units, or all of the repeating units are a combination of methacrylate repeating units and acrylate repeating units can be used, and it is preferable that the acrylate repeating units account for 50 mol% or less of the total repeating units.

[0209] In a preferred embodiment of the present invention, the resin (A) has at least one selected from the group consisting of a lactone group, a carbonate group, a sultone group, and a saturated hydrocarbon group having a hydroxyl group, which further improves sensitivity and resolution.

[0210] In a preferred embodiment of the present invention, the resin (A) contains a repeating unit having a group that generates an acid upon irradiation with actinic rays or radiation (a photoacid-generating group). By containing a repeating unit having a photoacid-generating group in the resin (A), the uniformity of the distribution of the material is increased, the variation in the acid concentration is reduced, and the LWR performance is further improved.

[0211] In a preferred embodiment of the present invention, the resin (A) contains a repeating unit having an iodine atom, which increases the absorption rate of EUV light and the like, reduces the effect of shot noise, and further improves the LWR performance.

[0212] The dispersity (molecular weight distribution, Mw / Mn) of the resin (A) is preferably 5.00 or less, more preferably 3.00 or less, even more preferably 2.00 or less, and particularly preferably less than 1.60. The lower limit of the dispersity of the resin (A) is more than 1.00. The smaller the dispersity, the better the sensitivity and resolution.

[0213] The method for synthesizing resin (A) is not particularly limited, and resin (A) can be synthesized according to a conventional method (e.g., radical polymerization). Living polymerization can also be used to suppress the molecular weight distribution of the resin. Examples of living polymerization include living radical polymerization and living anionic polymerization. Examples of living radical polymerization include radical polymerization using nitroxide radicals or dithioester compounds. If the dispersity of resin (A) obtained by the above polymerization step alone exceeds the desired dispersity, the desired dispersity can be achieved by fractionation by GPC or purification using a precipitation method.

[0214] The weight average molecular weight (Mw) of the resin (A), as calculated in terms of polystyrene by GPC, is preferably 30,000 or less, and more preferably 15,000 or less. The Mw of the resin (A) is preferably 1,000 or more, more preferably 3,000 or more, even more preferably 5,000 or more, and particularly preferably 8,000 or more from the viewpoint of improving sensitivity and resolution.

[0215] The content of resin (A) in the resist composition is preferably 30.0 to 99.9 mass%, more preferably 40.0 to 90.0 mass%, and even more preferably 50.0 to 80.0 mass%, based on the total solids content of the resist composition. Resin (A) may be used alone, or two or more types may be used. When two or more types are used, it is preferable that the total content falls within the above-mentioned suitable content range.

[0216] [Photoacid Generator (B)] The resist composition contains a photoacid generator (B) (also simply referred to as "photoacid generator (B)") that generates an acid upon irradiation with actinic rays or radiation.

[0217] The photoacid generator (B) may be in the form of a low molecular weight compound or may be incorporated into a polymer. Furthermore, both the low molecular weight compound and the polymer may be used in combination. When the photoacid generator (B) is in the form of a low molecular weight compound, the molecular weight of the photoacid generator (B) is not particularly limited, but is preferably 100 to 3,000, more preferably 150 to 2,500, and even more preferably 200 to 2,000. When the photoacid generator (B) is incorporated into a polymer, it may be incorporated into the resin (A) or into a resin different from the resin (A). When the resin (A) does not contain the repeating unit having a photoacid-generating group described above, the resist composition preferably contains a photoacid generator (B) that is a compound different from the resin (A). When the resin (A) contains a repeating unit having a photoacid-generating group, the resist composition may or may not contain a separate photoacid generator (B).

[0218] Examples of the photoacid generator (B) include "M + X - ", and it is preferably a compound that generates an organic acid upon exposure. Examples of the organic acid include sulfonic acids (aliphatic sulfonic acids, aromatic sulfonic acids, camphorsulfonic acids, etc.), carboxylic acids (aliphatic carboxylic acids, aromatic carboxylic acids, aralkyl carboxylic acids, etc.), carbonylsulfonylimido acids, bis(alkylsulfonyl)imido acids, and tris(alkylsulfonyl)methido acids.

[0219] "M + X - In the compound represented by the formula ", M + represents a cation, preferably an organic cation. The organic cation is preferably a cation represented by formula (ZaI) (hereinafter also referred to as "cation (ZaI)") or a cation represented by formula (ZaII) (hereinafter also referred to as "cation (ZaII)").

[0220]

[0221] In the above formula (ZaI), R 201 , R 202 , and R203 R each independently represents an organic group. 201 , R 202 , and R 203 The number of carbon atoms in the organic group represented by R is preferably 1 to 30, and more preferably 1 to 20. 201 ~R 203 Two of these may be bonded to form a ring structure, and the ring may contain an oxygen atom, a sulfur atom, an ester group, an amide group, or a carbonyl group. 201 ~R 203 Examples of groups formed by combining two of these include alkylene groups (e.g., butylene and pentylene groups) and —CH 2 -CH 2 -O-CH 2 -CH 2 - are some examples.

[0222] Suitable embodiments of the organic cation in formula (ZaI) include cation (ZaI-1), cation (ZaI-2), cation (ZaI-3b), and cation (ZaI-4b) described below.

[0223] First, the cation (ZaI-1) will be described. The cation (ZaI-1) is R in the above formula (ZaI). 201 ~R 203 is an arylsulfonium cation, in which at least one of R is an aryl group. 201 ~R 203 may all be aryl groups, or R 201 ~R 203 A part of R may be an aryl group, and the rest may be an alkyl group or a cycloalkyl group. 201 ~R 203 is an aryl group, and R 201 ~R 203 The remaining two of R may be bonded to form a ring structure, and the ring may contain an oxygen atom, a sulfur atom, an ester group, an amide group, or a carbonyl group. 201 ~R 203Examples of groups formed by combining two of the above include alkylene groups in which one or more methylene groups may be substituted with an oxygen atom, a sulfur atom, an ester group, an amide group, and / or a carbonyl group (e.g., butylene group, pentylene group, and —CH 2 -CH 2 -O-CH 2 -CH 2 The arylsulfonium cations include triarylsulfonium cations, diarylalkylsulfonium cations, aryldialkylsulfonium cations, diarylcycloalkylsulfonium cations, and aryldicycloalkylsulfonium cations.

[0224] The aryl group contained in the arylsulfonium cation is preferably a phenyl group or a naphthyl group, and more preferably a phenyl group. The aryl group may be an aryl group having a heterocyclic structure containing an oxygen atom, a nitrogen atom, or a sulfur atom. Examples of heterocyclic structures include pyrrole residues, furan residues, thiophene residues, indole residues, benzofuran residues, and benzothiophene residues. When the arylsulfonium cation has two or more aryl groups, the two or more aryl groups may be the same or different. The alkyl group or cycloalkyl group optionally contained in the arylsulfonium cation is preferably a linear alkyl group having 1 to 15 carbon atoms, a branched alkyl group having 3 to 15 carbon atoms, or a cycloalkyl group having 3 to 15 carbon atoms, and more preferably a methyl group, an ethyl group, a propyl group, an n-butyl group, a sec-butyl group, a t-butyl group, a cyclopropyl group, a cyclobutyl group, or a cyclohexyl group.

[0225] R 201 ~R 203Preferred substituents that the aryl group, alkyl group, and cycloalkyl group may have include alkyl groups (e.g., having 1 to 15 carbon atoms), cycloalkyl groups (e.g., having 3 to 15 carbon atoms), aryl groups (e.g., having 6 to 14 carbon atoms), alkoxy groups (e.g., having 1 to 15 carbon atoms), cycloalkylalkoxy groups (e.g., having 1 to 15 carbon atoms), halogen atoms (e.g., fluorine and iodine), hydroxyl groups, carboxyl groups, ester groups, sulfinyl groups, sulfonyl groups, alkylthio groups, and phenylthio groups. The above substituents may further have substituents if possible, and it is also preferred that the alkyl group has a halogen atom as a substituent to form a halogenated alkyl group such as a trifluoromethyl group. It is also preferred that the above substituents form an acid-decomposable group in any combination. Note that the acid-decomposable group is intended to be a group that decomposes under the action of acid to generate a polar group, and preferably has a structure in which the polar group is protected by a group that leaves under the action of acid. The polar group and leaving group are as described above.

[0226] Next, the cation (ZaI-2) will be described. The cation (ZaI-2) is a cation represented by the formula (ZaI) R 201 ~R 203 are each independently a cation representing an organic group that does not have an aromatic ring. The aromatic ring also includes an aromatic ring containing a heteroatom. 201 ~R 203 The number of carbon atoms of the organic group not having an aromatic ring as R is preferably 1 to 30, and more preferably 1 to 20. 201 ~R 203 are each independently preferably an alkyl group, a cycloalkyl group, an allyl group, or a vinyl group, more preferably a linear or branched 2-oxoalkyl group, a 2-oxocycloalkyl group, or an alkoxycarbonylmethyl group, and still more preferably a linear or branched 2-oxoalkyl group.

[0227] R 201 ~R 203Examples of the alkyl group and cycloalkyl group in R include linear alkyl groups having 1 to 10 carbon atoms or branched alkyl groups having 3 to 10 carbon atoms (e.g., methyl, ethyl, propyl, butyl, and pentyl groups), and cycloalkyl groups having 3 to 10 carbon atoms (e.g., cyclopentyl, cyclohexyl, and norbornyl groups). 201 ~R 203 may be further substituted with a halogen atom, an alkoxy group (e.g., having 1 to 5 carbon atoms), a hydroxyl group, a cyano group, or a nitro group. 201 ~R 203 It is also preferred that the substituents independently form an acid-decomposable group by any combination of the substituents.

[0228] Next, the cation (ZaI-3b) will be described. The cation (ZaI-3b) is a cation represented by the following formula (ZaI-3b).

[0229]

[0230] In formula (ZaI-3b), R 1c ~R 5c R each independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group, an alkoxy group, an aryloxy group, an alkoxycarbonyl group, an alkylcarbonyloxy group, a cycloalkylcarbonyloxy group, a halogen atom, a hydroxyl group, a nitro group, an alkylthio group, or an arylthio group. 6c and R 7c R each independently represents a hydrogen atom, an alkyl group (for example, a t-butyl group), a cycloalkyl group, a halogen atom, a cyano group, or an aryl group. x and R y R each independently represents an alkyl group, a cycloalkyl group, a 2-oxoalkyl group, a 2-oxocycloalkyl group, an alkoxycarbonylalkyl group, an allyl group, or a vinyl group. 1c ~R 7c , and R x and R y It is also preferred that the substituents independently form an acid-decomposable group by any combination of the substituents.

[0231] R 1c ~R 5c Two or more of the following, R 5c and R 6c , R 6c and R 7c , R 5c and R x , and R x and R y may be bonded to each other to form a ring, and each of these rings may independently contain an oxygen atom, a sulfur atom, a ketone group, an ester bond, or an amide bond. Examples of the ring include aromatic or non-aromatic hydrocarbon rings, aromatic or non-aromatic heterocycles, and polycyclic fused rings formed by combining two or more of these rings. Examples of the ring include 3- to 10-membered rings, preferably 4- to 8-membered rings, and more preferably 5- or 6-membered rings.

[0232] R 1c ~R 5c Two or more of the following, R 6c and R 7c , and R x and R y Examples of the group formed by bonding of R include alkylene groups such as butylene and pentylene. The methylene group in this alkylene group may be substituted with a heteroatom such as an oxygen atom. 5c and R 6c , and R 5c and R x The group formed by bonding is preferably a single bond or an alkylene group. Examples of the alkylene group include a methylene group and an ethylene group.

[0233] R 1c ~R 5c , R 6c , R 7c , R x , R y , and R 1c ~R 5c Two or more of the following, R 5c and R 6c , R 6c and R 7c , R 5c and R x , and R x and R yThe ring formed by bonding together may have a substituent.

[0234] Next, the cation (ZaI-4b) will be described. The cation (ZaI-4b) is a cation represented by the following formula (ZaI-4b).

[0235]

[0236] In formula (ZaI-4b), l represents an integer of 0 to 2, and r represents an integer of 0 to 8. 13 represents a hydrogen atom, a halogen atom (for example, a fluorine atom or an iodine atom), a hydroxyl group, an alkyl group, a halogenated alkyl group, an alkoxy group, a carboxyl group, an alkoxycarbonyl group, or a group containing a cycloalkyl group (which may be a cycloalkyl group itself or a group containing a cycloalkyl group as a part). These groups may have a substituent. R 14 represents a hydroxyl group, a halogen atom (for example, a fluorine atom or an iodine atom), an alkyl group, a halogenated alkyl group, an alkoxy group, an alkoxycarbonyl group, an alkylcarbonyl group, an alkylsulfonyl group, a cycloalkylsulfonyl group, or a group containing a cycloalkyl group (which may be a cycloalkyl group itself or a group containing a cycloalkyl group as a part). These groups may have a substituent. R 14 When a plurality of R are present, each independently represents the above group such as a hydroxyl group. 15 each independently represents an alkyl group, a cycloalkyl group, or a naphthyl group. 15 may be bonded to each other to form a ring. 15 When two R are bonded to each other to form a ring, the ring skeleton may contain a heteroatom such as an oxygen atom or a nitrogen atom. 15 are preferably alkylene groups and bonded to each other to form a ring structure. 15 The ring formed by bonding together may have a substituent.

[0237] In formula (ZaI-4b), R 13 , R14 , and R 15 The alkyl group in R may be linear or branched. The number of carbon atoms in the alkyl group is preferably 1 to 10. The alkyl group is preferably a methyl group, an ethyl group, an n-butyl group, a t-butyl group, or the like. 13 ~R 15 , and R x and R y It is also preferred that each of the substituents independently form an acid-decomposable group by any combination of the substituents.

[0238] Next, formula (ZaII) will be described. In formula (ZaII), R 204 and R 205 R each independently represents an aryl group, an alkyl group, or a cycloalkyl group. 204 and R 205 The aryl group in R is preferably a phenyl group or a naphthyl group, and more preferably a phenyl group. 204 and R 205 The aryl group in R may be an aryl group having a heterocycle containing an oxygen atom, a nitrogen atom, a sulfur atom, or the like. Examples of the skeleton of the aryl group having a heterocycle include pyrrole, furan, thiophene, indole, benzofuran, and benzothiophene. 204 and R 205 The alkyl group and cycloalkyl group are preferably a linear alkyl group having 1 to 10 carbon atoms or a branched alkyl group having 3 to 10 carbon atoms (e.g., methyl, ethyl, propyl, butyl, or pentyl), or a cycloalkyl group having 3 to 10 carbon atoms (e.g., cyclopentyl, cyclohexyl, or norbornyl).

[0239] R 204 and R 205 The aryl group, alkyl group, and cycloalkyl group in R may each independently have a substituent. 204 and R 205Examples of the substituents that the aryl group, alkyl group, and cycloalkyl group may have include alkyl groups (e.g., having 1 to 15 carbon atoms), cycloalkyl groups (e.g., having 3 to 15 carbon atoms), aryl groups (e.g., having 6 to 15 carbon atoms), alkoxy groups (e.g., having 1 to 15 carbon atoms), halogen atoms, hydroxyl groups, and phenylthio groups. 204 and R 205 It is also preferred that the substituents independently form an acid-decomposable group by any combination of the substituents.

[0240] Specific examples of organic cations are shown below, but the present invention is not limited to these.

[0241]

[0242]

[0243] "M + X - In the compound represented by the formula "X - represents an anion. The anion is not particularly limited, and examples thereof include monovalent or divalent or higher anions. The anion is preferably an anion having a significantly low ability to cause a nucleophilic reaction, and more preferably a non-nucleophilic anion. The anion is preferably an organic anion.

[0244] Examples of non-nucleophilic anions include sulfonate anions (aliphatic sulfonate anions, aromatic sulfonate anions, camphorsulfonate anions, etc.), carboxylate anions (aliphatic carboxylate anions, aromatic carboxylate anions, aralkyl carboxylate anions, etc.), sulfonylimide anions, bis(alkylsulfonyl)imide anions, and tris(alkylsulfonyl)methide anions.

[0245] The aliphatic moiety in the aliphatic sulfonate anion and the aliphatic carboxylate anion may be a linear or branched alkyl group or a cycloalkyl group, and is preferably a linear or branched alkyl group having 1 to 30 carbon atoms or a cycloalkyl group having 3 to 30 carbon atoms. The alkyl group may be, for example, a fluoroalkyl group (which may have a substituent other than a fluorine atom, or may be a perfluoroalkyl group).

[0246] The aryl group in the aromatic sulfonate anion and aromatic carboxylate anion is preferably an aryl group having 6 to 14 carbon atoms, and examples thereof include a phenyl group, a tolyl group, and a naphthyl group.

[0247] The alkyl group, cycloalkyl group, and aryl group mentioned above may have a substituent. The substituent is not particularly limited, but examples thereof include a nitro group, a halogen atom such as a fluorine atom or a chlorine atom, a carboxyl group, a hydroxyl group, an amino group, a cyano group, an alkoxy group (preferably having 1 to 15 carbon atoms), an alkyl group (preferably having 1 to 10 carbon atoms), a cycloalkyl group (preferably having 3 to 15 carbon atoms), an aryl group (preferably having 6 to 14 carbon atoms), an alkoxycarbonyl group (preferably having 2 to 7 carbon atoms), an acyl group (preferably having 2 to 12 carbon atoms), an alkoxycarbonyloxy group (preferably having 2 to 7 carbon atoms), an alkylthio group (preferably having 1 to 15 carbon atoms), an alkylsulfonyl group (preferably having 1 to 15 carbon atoms), an alkyliminosulfonyl group (preferably having 1 to 15 carbon atoms), and an aryloxysulfonyl group (preferably having 6 to 20 carbon atoms).

[0248] The aralkyl group in the aralkyl carboxylate anion is preferably an aralkyl group having 7 to 14 carbon atoms. Examples of the aralkyl group having 7 to 14 carbon atoms include a benzyl group, a phenethyl group, a naphthylmethyl group, a naphthylethyl group, and a naphthylbutyl group.

[0249] An example of the sulfonylimide anion is a saccharin anion.

[0250] The alkyl group in the bis(alkylsulfonyl)imide anion and the tris(alkylsulfonyl)methide anion is preferably an alkyl group having 1 to 5 carbon atoms. Substituents for these alkyl groups include halogen atoms, alkyl groups substituted with halogen atoms, alkoxy groups, alkylthio groups, alkyloxysulfonyl groups, aryloxysulfonyl groups, and cycloalkylaryloxysulfonyl groups, with fluorine atoms or alkyl groups substituted with fluorine atoms being preferred. Furthermore, the alkyl groups in the bis(alkylsulfonyl)imide anion may be bonded to each other to form a ring structure, which increases the acid strength.

[0251] Other non-nucleophilic anions include, for example, phosphorus fluorides (e.g., PF 6 - ), boron fluorides (e.g., BF 4 - ), and antimony fluorides (e.g., SbF 6 - ) are listed.

[0252] Preferred non-nucleophilic anions include aliphatic sulfonate anions in which at least the α-position of the sulfonic acid is substituted with a fluorine atom, aromatic sulfonate anions substituted with a fluorine atom or a group having a fluorine atom, bis(alkylsulfonyl)imide anions in which an alkyl group is substituted with a fluorine atom, and tris(alkylsulfonyl)methide anions in which an alkyl group is substituted with a fluorine atom. Among these, perfluoroaliphatic sulfonate anions (preferably having 4 to 8 carbon atoms) and benzenesulfonate anions having a fluorine atom are more preferred, and nonafluorobutanesulfonate anions, perfluorooctanesulfonate anions, pentafluorobenzenesulfonate anions, and 3,5-bis(trifluoromethyl)benzenesulfonate anions are even more preferred.

[0253] The non-nucleophilic anion is also preferably an anion represented by the following formula (AN1).

[0254]

[0255] In formula (AN1), R1 and R 2 each independently represents a hydrogen atom or a substituent. The substituent is not particularly limited, but a group that is not an electron-withdrawing group is preferred. Examples of groups that are not electron-withdrawing groups include hydrocarbon groups, hydroxyl groups, oxyhydrocarbon groups, oxycarbonyl hydrocarbon groups, amino groups, hydrocarbon-substituted amino groups, and hydrocarbon-substituted amide groups. Examples of groups that are not electron-withdrawing groups include, each independently, -R', -OH, -OR', -OCOR', -NH 2 , -NR' 2 , —NHR′, or —NHCOR′ is preferred, where R′ is a monovalent hydrocarbon group.

[0256] Examples of the monovalent hydrocarbon group represented by R' include monovalent linear or branched hydrocarbon groups such as alkyl groups such as methyl, ethyl, propyl, and butyl; alkenyl groups such as ethenyl, propenyl, and butenyl; alkynyl groups such as ethynyl, propynyl, and butynyl; cycloalkyl groups such as cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, norbornyl, and adamantyl; monovalent alicyclic hydrocarbon groups such as cycloalkenyl groups such as cyclopropenyl, cyclobutenyl, cyclopentenyl, and norbornenyl; aryl groups such as phenyl, tolyl, xylyl, mesityl, naphthyl, methylnaphthyl, anthryl, and methylanthryl; and aralkyl groups such as benzyl, phenethyl, phenylpropyl, naphthylmethyl, and anthrylmethyl. Among these, R 1 and R 2 are each independently preferably a hydrocarbon group (preferably a cycloalkyl group) or a hydrogen atom.

[0257] L represents a divalent linking group. When a plurality of L's are present, they may be the same or different. Examples of the divalent linking group include -O-CO-O-, -COO-, -CONH-, -CO-, -O-, -S-, -SO-, and -SO 2Examples of the divalent linking group include -, an alkylene group (preferably having 1 to 6 carbon atoms), a cycloalkylene group (preferably having 3 to 15 carbon atoms), an alkenylene group (preferably having 2 to 6 carbon atoms), and a divalent linking group formed by combining a plurality of these groups. Among these, examples of the divalent linking group include -O-CO-O-, -COO-, -CONH-, -CO-, -O-, and -SO 2 -, -O-CO-O-alkylene group-, -COO-alkylene group-, or -CONH-alkylene group- is preferred, and -O-CO-O-, -O-CO-O-alkylene group-, -COO-, -CONH-, or -SO 2 - or -COO-alkylene group- is more preferred.

[0258] As L, for example, a group represented by the following formula (AN1-1) is preferable: a - (CR 2a 2 ) X -Q-(CR 2b 2 ) Y -* b (AN1-1)

[0259] In formula (AN1-1), * a is R in formula (AN1). 3 Represents the bonding position with * b represents -C(R 1 ) (R 2 X and Y each independently represent an integer of 0 to 10, preferably an integer of 0 to 3. R 2a and R 2b R each independently represents a hydrogen atom or a substituent. 2a and R 2b When there are multiple R 2a and R 2b may be the same or different, provided that when Y is 1 or more, -C(R 1 ) (R 2 )- and CR directly bonded 2b 2 R in 2b is other than a fluorine atom. Q is * A -O-CO-O-*B , * A -CO-* B , * A -CO-O-* B , * A -O-CO-* B , * A -O-* B , * A -S-* B , or * A -SO 2 -* B where X+Y in formula (AN1-1) is 1 or more, and R 2a and R 2b are all hydrogen atoms, Q is * A -O-CO-O-* B , * A -CO-* B , * A -O-CO-* B , * A -O-* B , * A -S-* B , or * A -SO 2 -* B Represents. A is R in formula (AN1). 3 represents the bonding position on the side, and * B represents -SO in formula (AN1). 3 - represents the bonding position on the side.

[0260] In formula (AN1), R 3 represents an organic group. The organic group is not particularly limited as long as it has one or more carbon atoms, and may be a linear group (for example, a linear alkyl group), a branched group (for example, a branched alkyl group such as a t-butyl group), or a cyclic group. The organic group may or may not have a substituent. The organic group may or may not have a heteroatom (such as an oxygen atom, a sulfur atom, and / or a nitrogen atom).

[0261] Among them, R 3is preferably an organic group having a cyclic structure. The cyclic structure may be monocyclic or polycyclic and may have a substituent. The ring in the organic group having a cyclic structure is preferably directly bonded to L in formula (AN1). The organic group having a cyclic structure may or may not have a heteroatom (oxygen atom, sulfur atom, and / or nitrogen atom, etc.). The heteroatom may be substituted for one or more of the carbon atoms forming the cyclic structure. The organic group having a cyclic structure is preferably, for example, a hydrocarbon group having a cyclic structure, a lactone ring group, or a sultone ring group. Among these, the organic group having a cyclic structure is preferably a hydrocarbon group having a cyclic structure. The hydrocarbon group having a cyclic structure is preferably a monocyclic or polycyclic cycloalkyl group. These groups may have a substituent. The cycloalkyl group may be monocyclic (e.g., a cyclohexyl group) or polycyclic (e.g., an adamantyl group), and preferably has 5 to 12 carbon atoms. As the lactone group and sultone group, for example, a group in which one hydrogen atom has been removed from a ring atom constituting the lactone structure or sultone structure in any of the structures represented by the above-mentioned formulae (LC1-1) to (LC1-22) and the structures represented by the above-mentioned formulae (SL1-1) to (SL1-3) is preferred.

[0262] R 3 Preferably, R contains a halogen atom. 3 The halogen atom contained in is preferably a fluorine atom or an iodine atom, and particularly preferably an iodine atom. When used as an EUV resist, the number of halogen atoms is preferably as large as possible from the viewpoint of the absorption efficiency of EUV light. When an iodine atom is contained, a structure in which the iodine atom is directly bonded to a carbon atom on an aromatic ring is preferred. Preferred embodiments of the anion represented by formula (AN1) include those described in

[0040] to

[0044] of JP 2018-155908 A.

[0263] The non-nucleophilic anion may be a benzenesulfonate anion, and is preferably a benzenesulfonate anion substituted with a branched alkyl group or a cycloalkyl group.

[0264] The non-nucleophilic anion is also preferably an anion represented by the following formula (AN2).

[0265]

[0266] In formula (AN2), o represents an integer of 1 to 3. p represents an integer of 0 to 10. q represents an integer of 0 to 10.

[0267] Xf represents a hydrogen atom, a fluorine atom, an alkyl group substituted with at least one fluorine atom, or an organic group having no fluorine atoms. The number of carbon atoms in this alkyl group is preferably 1 to 10, more preferably 1 to 4. The alkyl group substituted with at least one fluorine atom is preferably a perfluoroalkyl group. Xf is preferably a fluorine atom or a perfluoroalkyl group having 1 to 4 carbon atoms, and is preferably a fluorine atom or CF 3 It is more preferable that both Xf's are fluorine atoms.

[0268] R 4 and R 5 R each independently represents a hydrogen atom, a fluorine atom, an alkyl group, or an alkyl group substituted with at least one fluorine atom. 4 and R 5 If there are multiple 4 and R 5 may be the same or different. 4 and R 5 The alkyl group represented by the formula (I) preferably has 1 to 4 carbon atoms. The alkyl group may have a substituent. 4 and R 5 is preferably a hydrogen atom.

[0269] L represents a divalent linking group, and is defined the same as L in formula (AN1).

[0270] W represents an organic group containing a cyclic structure. Among these, a cyclic organic group is preferred. Examples of the cyclic organic group include an alicyclic group, an aryl group, and a heterocyclic group. The alicyclic group may be monocyclic or polycyclic. Examples of the monocyclic alicyclic group include a monocyclic cycloalkyl group such as a cyclopentyl group, a cyclohexyl group, and a cyclooctyl group. Examples of the polycyclic alicyclic group include a polycyclic cycloalkyl group such as a norbornyl group, a tricyclodecanyl group, a tetracyclodecanyl group, a tetracyclododecanyl group, and an adamantyl group. Among these, alicyclic groups having a bulky structure with 7 or more carbon atoms, such as a norbornyl group, a tricyclodecanyl group, a tetracyclodecanyl group, a tetracyclododecanyl group, and an adamantyl group, are preferred.

[0271] The aryl group may be monocyclic or polycyclic. Examples of the aryl group include a phenyl group, a naphthyl group, a phenanthryl group, and an anthryl group. The heterocyclic group may be monocyclic or polycyclic. In particular, a polycyclic heterocyclic group can further suppress the diffusion of acid. The heterocyclic group may or may not have aromaticity. Examples of heterocyclic rings having aromaticity include a furan ring, a thiophene ring, a benzofuran ring, a benzothiophene ring, a dibenzofuran ring, a dibenzothiophene ring, and a pyridine ring. Examples of heterocyclic rings having no aromaticity include a tetrahydropyran ring, a lactone ring, a sultone ring, and a decahydroisoquinoline ring. The heterocyclic ring in the heterocyclic group is preferably a furan ring, a thiophene ring, a pyridine ring, or a decahydroisoquinoline ring.

[0272] The cyclic organic group may have a substituent. Examples of the substituent include an alkyl group (which may be either linear or branched, and preferably has 1 to 12 carbon atoms), a cycloalkyl group (which may be either monocyclic, polycyclic, or spirocyclic, and preferably has 3 to 20 carbon atoms), an aryl group (which preferably has 6 to 14 carbon atoms), a hydroxyl group, an alkoxy group, an ester group, an amide group, a urethane group, a ureido group, a thioether group, a sulfonamide group, and a sulfonate ester group. The carbon constituting the cyclic organic group (the carbon that contributes to ring formation) may be a carbonyl carbon.

[0273] W preferably contains a halogen atom. The halogen atom contained in W is preferably a fluorine atom or an iodine atom, and particularly preferably an iodine atom. When used as an EUV resist, the number of halogen atoms is preferably as large as possible from the viewpoint of the absorption efficiency of EUV light. When an iodine atom is contained, a structure in which the iodine atom is directly bonded to a carbon atom on an aromatic ring is preferred.

[0274] The anion represented by formula (AN2) is SO 3 - -CF 2 -CH 2 -OCO-(L) q’ -W, SO 3 - -CF 2 -CHF-CH 2 -OCO-(L) q’ -W, SO 3 - -CF 2 -COO-(L) q’ -W, SO 3 - -CF 2 -CF 2 -CH 2 -CH 2 - (L) q -W or SO 3 - -CF 2 -CH(CF 3 ) -OCO-(L) q’ -W is preferred. Here, L, q and W are the same as those in formula (AN2). q' represents an integer of 0 to 10.

[0275] Preferred embodiments of the anion represented by formula (AN2) include

[0076] of WO 2023 / 157455,

[0071] to

[0089] of JP-A 2021-81708,

[0033] to

[0045] of JP-A 2018-5224, and

[0031] to

[0039] of JP-A 2018-25789.

[0276] The non-nucleophilic anion is also preferably an aromatic sulfonate anion represented by the following formula (AN3).

[0277]

[0278] In formula (AN3), Ar represents an aryl group (such as a phenyl group) and may further have a substituent other than the sulfonate anion and the -(D-B) group. Examples of the substituent that may further be had include a fluorine atom and a hydroxyl group. n represents an integer of 0 or greater. n is preferably 1 to 4, more preferably 2 to 3, and even more preferably 3.

[0279] D represents a single bond or a divalent linking group. Examples of the divalent linking group include an ether group, a thioether group, a carbonyl group, a sulfoxide group, a sulfone group, a sulfonate ester group, an ester group, and a group formed by combining two or more of these groups.

[0280] B represents a hydrocarbon group. B is preferably an aliphatic hydrocarbon group or an aromatic hydrocarbon group, and more preferably an isopropyl group, a cyclohexyl group, or an aryl group which may further have a substituent (e.g., a tricyclohexylphenyl group).

[0281] B preferably contains a halogen atom. The halogen atom contained in B is preferably a fluorine atom or an iodine atom, and particularly preferably an iodine atom. When used as an EUV resist, the number of halogen atoms is preferably as large as possible from the viewpoint of the absorption efficiency of EUV light. When an iodine atom is contained, a structure in which the iodine atom is directly bonded to a carbon atom on an aromatic ring is preferred.

[0282] Preferred embodiments of the anion represented by formula (AN3) include those described in

[0029] to

[0034] of JP-A-2018-159744 and

[0045] of JP-A-2018-155908.

[0283] As the non-nucleophilic anion, a disulfonamide anion is also preferred. The disulfonamide anion is, for example, N - (SO 2 -R q ) 2 where R q represents an alkyl group which may have a substituent, preferably a fluoroalkyl group, more preferably a perfluoroalkyl group. q may be bonded to each other to form a ring. q The group formed by bonding together is preferably an alkylene group which may have a substituent, more preferably a fluoroalkylene group, and even more preferably a perfluoroalkylene group. The alkylene group preferably has 2 to 4 carbon atoms.

[0284] Further, examples of the non-nucleophilic anion include anions represented by the following formulas (d1-1) to (d1-4).

[0285]

[0286]

[0287] In formula (d1-1), R 51 represents a hydrocarbon group (for example, an aryl group such as a phenyl group) which may have a substituent (for example, a hydroxyl group).

[0288] In formula (d1-2), Z 2c represents a hydrocarbon group having 1 to 30 carbon atoms which may have a substituent (provided that the carbon atom adjacent to S is not substituted with a fluorine atom). 2cThe hydrocarbon group in the formula (d1-2) may be linear or branched, or may have a cyclic structure. In addition, a carbon atom in the hydrocarbon group (preferably, a carbon atom that is a ring atom when the hydrocarbon group has a cyclic structure) may be a carbonyl carbon (-CO-). Examples of the hydrocarbon group include a group having a norbornyl group that may have a substituent. The carbon atom forming the norbornyl group may be a carbonyl carbon. In addition, "Z 2c -SO 3 - " is preferably different from the anion represented by the above formula (AN4), (AN1) or (AN5). For example, Z 2c is preferably other than an aryl group. 2c In the -SO 3 - The atoms at the α-position and β-position to Z are preferably atoms other than carbon atoms having a fluorine atom as a substituent. 2c is -SO 3 - The atom at the α-position and / or the atom at the β-position to the is preferably a ring atom in a cyclic group.

[0289] In formula (d1-3), R 52 represents an organic group (preferably a hydrocarbon group having a fluorine atom), Y 3 represents a linear, branched, or cyclic alkylene group, an arylene group, or a carbonyl group, and Rf represents a hydrocarbon group.

[0290] In formula (d1-4), R 53 ~R 54 represents an organic group (preferably a hydrocarbon group having a fluorine atom). 53 ~R 54 may be bonded to each other to form a ring.

[0291] The anions may be used alone or in combination of two or more.

[0292] It is also preferable that the photoacid generator (B) is at least one selected from the group consisting of compounds (I) to (II).

[0293] (Compound (I)) Compound (I) is a compound having one or more structural moieties X and one or more structural moieties Y, which generates an acid containing the first acidic moiety derived from the structural moiety X and the second acidic moiety derived from the structural moiety Y when irradiated with actinic rays or radiation. Structural moiety X: Anionic moiety A 1 - and the cationic moiety M 1 + and by irradiation with actinic rays or radiation, HA 1 Structural moiety Y: anionic moiety A, which forms a first acidic moiety represented by the formula: 2 - and the cationic moiety M 2 + and by irradiation with actinic rays or radiation, HA 2 The compound (I) satisfies the following condition I:

[0294] Condition I: In the compound (I), the cationic moiety M in the structural moiety X 1 + and the cationic moiety M in the structural moiety Y 2 + H + The compound PI in which the cation moiety M in the structural moiety X is replaced by 1 + H + HA is replaced by 1 and the cationic moiety M in the structural moiety Y. 2 + H + HA is replaced by 2 and an acid dissociation constant a2 derived from the acidic site represented by the formula (I), and the acid dissociation constant a2 is greater than the acid dissociation constant a1.

[0295] Condition I will be explained in more detail below. For example, when compound (I) is an acid-generating compound having one of the first acidic sites derived from the structural moiety X and one of the second acidic sites derived from the structural moiety Y, compound PI is "HA 1 and H.A.2 The acid dissociation constant a1 and the acid dissociation constant a2 of the compound PI correspond to "a compound having the following structure." More specifically, when the acid dissociation constant of the compound PI is calculated, the acid dissociation constant a1 and the acid dissociation constant a2 of the compound PI correspond to "a compound having the following structure." 1 - and H.A. 2 The pKa at which the compound becomes "a compound having the above formula (A)" is the acid dissociation constant a1, 1 - and H.A. 2 "A compound having 1 - and A 2 - The pKa at which the compound becomes "a compound having the above formula (I)" is the acid dissociation constant a2.

[0296] For example, when compound (I) is an acid-generating compound having two of the first acidic sites derived from the structural site X and one of the second acidic sites derived from the structural site Y, compound PI is a compound having two HAs. 1 and one HA 2 When the acid dissociation constant of compound PI is calculated, compound PI corresponds to "a compound having one A 1 - and one HA 1 and one HA 2 and the acid dissociation constant when "a compound having one A 1 - and one HA 1 and one HA 2 "Compound having two A 1 - and one HA 2 The acid dissociation constant when the compound is a compound having two A's corresponds to the acid dissociation constant a1. 1 - and one HA 2 "Compound having two A 1 - and A 2 - In other words, in the case of compound PI, the acid dissociation constant when the compound becomes a compound having the cation moiety M in the structural moiety X corresponds to the acid dissociation constant a2. 1 + H + HA is replaced by1 When the compound PI has a plurality of acid dissociation constants derived from the acidic moiety represented by the formula (I), the value of the acid dissociation constant a2 is larger than the largest value of the plurality of acid dissociation constants a1. 1 - and one HA 1 and one HA 2 The acid dissociation constant when the compound is aa is defined as "a compound having one A 1 - and one HA 1 and one HA 2 "Compound having two A 1 - and one HA 2 When the acid dissociation constant when the compound becomes "a compound having the formula (I)" is ab, the relationship between aa and ab satisfies aa<ab.

[0297] The acid dissociation constants a1 and a2 are determined by the above-mentioned method for measuring an acid dissociation constant. The compound PI corresponds to an acid generated when compound (I) is irradiated with actinic rays or radiation. When compound (I) has two or more structural moieties X, the structural moieties X may be the same or different. In addition, when two or more of the above A 1 - and two or more of the above M 1 + In compound (I), the above A 1 - and the above A 2 - , and the above M 1 + and the above M 2 + may be the same or different, but 1 - and the above A 2 - are preferably different from each other.

[0298] In the compound PI, the difference (absolute value) between the acid dissociation constant a1 (the maximum value when there are multiple acid dissociation constants a1) and the acid dissociation constant a2 is preferably 0.1 or more, more preferably 0.5 or more, and even more preferably 1.0 or more. The upper limit of the difference (absolute value) between the acid dissociation constant a1 (the maximum value when there are multiple acid dissociation constants a1) and the acid dissociation constant a2 is not particularly limited, but is, for example, 16 or less.

[0299] In the compound PI, the acid dissociation constant a2 is preferably not more than 20, more preferably not more than 15. The lower limit of the acid dissociation constant a2 is preferably not less than −4.0.

[0300] In the compound PI, the acid dissociation constant a1 is preferably 2.0 or less, and more preferably 0 or less. The lower limit of the acid dissociation constant a1 is preferably −20.0 or more.

[0301] Anion site A 1 - and anionic moiety A 2 - is a structural moiety containing a negatively charged atom or atomic group, and examples thereof include structural moieties selected from the group consisting of formulae (AA-1) to (AA-3) and formulae (BB-1) to (BB-6) shown below. 1 - As the anionic moiety A, those capable of forming an acidic moiety with a small acid dissociation constant are preferred, and among these, any of formulas (AA-1) to (AA-3) is more preferred, and any of formulas (AA-1) and (AA-3) is even more preferred. 2 - As the anion moiety A 1 - Preferably, it is one that can form an acidic site with a larger acid dissociation constant than the above, more preferably any of formulas (BB-1) to (BB-6), and even more preferably any of formulas (BB-1) and (BB-4). In the following formulas (AA-1) to (AA-3) and formulas (BB-1) to (BB-6), * represents a bonding position. In formula (AA-2), R A represents a monovalent organic group. AThe monovalent organic group represented by the formula (I) is not particularly limited, but examples thereof include a cyano group, a trifluoromethyl group, and a methanesulfonyl group.

[0302]

[0303]

[0304] Cationic moiety M 1 + and cationic moiety M 2 + is a structural moiety containing a positively charged atom or atomic group, and examples thereof include organic cations having a monovalent charge. + Examples of the organic cation include those represented by the following formula:

[0305] (Compound (II)) Compound (II) is a compound having two or more of the above structural moieties X and one or more of the following structural moieties Z, which generates an acid containing two or more of the first acidic moieties derived from the structural moiety X and the structural moiety Z upon irradiation with actinic rays or radiation. Structural moiety Z: a ​​nonionic moiety capable of neutralizing an acid

[0306] In compound (II), the definition of the structural moiety X and A 1 - and M 1 + The definition of the structural moiety X in compound (I) and A 1 - and M 1 + The definition and preferred embodiments are also the same.

[0307] In the compound (II), the cation moiety M in the structural moiety X 1 + H + In the compound PII, the cationic moiety M in the structural moiety X is replaced by 1 + H + HA is replaced by 1The preferred range of the acid dissociation constant a1 derived from the acidic moiety represented by the formula (I) is the same as the acid dissociation constant a1 in the compound PI. In addition, when the compound (II) is, for example, a compound that generates an acid having two of the first acidic moieties derived from the structural moiety X and the structural moiety Z, the compound PII is a compound that generates an acid having two HAs. 1 When the acid dissociation constant of this compound PII was calculated, it was found that the compound PII has "one A 1 - and one HA 1 and the acid dissociation constant when "a compound having one A 1 - and one HA 1 "Compound having two A 1 - The acid dissociation constant when the compound becomes "a compound having the formula (I)" corresponds to the acid dissociation constant a1.

[0308] The acid dissociation constant a1 can be determined by the above-mentioned method for measuring an acid dissociation constant. The compound PII corresponds to the acid generated when compound (II) is irradiated with actinic rays or radiation. The two or more structural moieties X may be the same or different. 1 - and two or more of the above M 1 + may be the same or different.

[0309] The nonionic moiety capable of neutralizing an acid in the structural moiety Z is not particularly limited, and is preferably, for example, a moiety containing a group capable of electrostatically interacting with a proton or a functional group having electrons. Examples of the group capable of electrostatically interacting with a proton or the functional group having electrons include functional groups having a macrocyclic structure such as cyclic polyethers, and functional groups having a nitrogen atom with an unshared electron pair that does not contribute to π-conjugation. The nitrogen atom with an unshared electron pair that does not contribute to π-conjugation is, for example, a nitrogen atom having a partial structure shown in the following formula:

[0310]

[0311] Examples of the partial structure of a functional group having a group or electron capable of electrostatically interacting with a proton include a crown ether structure, an azacrown ether structure, a primary amine structure, a secondary amine structure, a tertiary amine structure, a pyridine structure, an imidazole structure, and a pyrazine structure. Of these, a primary amine structure, a secondary amine structure, a tertiary amine structure, and a tertiary amine structure are preferred.

[0312] Examples of moieties other than cations that Compound (I) and Compound (II) may have are shown below.

[0313]

[0314]

[0315] The photoacid generator (B) may be an inner salt. Examples of the inner salt include the above-mentioned "E + X - " E of the compound represented by + Examples of the anionic moiety include compounds having a structure in which an anionic moiety is bonded to a cation represented by the following formula: The anionic moiety includes a group containing a structural moiety selected from the group consisting of formulas (AA-1) to (AA-3) and formulas (BB-1) to (BB-6) above, and a group containing a structural moiety selected from the group consisting of formulas (AA-1) to (AA-3) above is preferred.

[0316] The content of the photoacid generator (B) is preferably 20.0% by mass or more, more preferably 30.0% by mass or more, and even more preferably 40.0% by mass or more, based on the total solid content of the resist composition. Furthermore, the content of the photoacid generator (B) is preferably 60.0% by mass or less, more preferably 55.0% by mass or less, and even more preferably 50.0% by mass or less, based on the total solid content of the resist composition. Only one type of photoacid generator (B) may be used, or two or more types may be used. When two or more types of photoacid generator (B) are used, the total content thereof is preferably within the above-mentioned preferred content range.

[0317] [Acid Diffusion Controller] The resist composition may contain an acid diffusion controller (also referred to as acid diffusion controller (C)). The acid diffusion controller can act as a quencher that traps acid generated from, for example, a photoacid generator during exposure, and suppresses a reaction of the resin (A) in unexposed areas due to excess generated acid.

[0318] The acid diffusion controller preferably contains a carboxylate and is preferably at least one selected from the group consisting of compounds represented by the following formula (S-1) and compounds represented by the following formula (S-2):

[0319]

[0320] In formula (S-1), R S1 represents a hydrogen atom or a substituent. S1 represents a single bond or a linking group. S1 represents a single bond or a linking group. 2 + represents a sulfonium cation. S1 , L S1 and X S1 At least one of the groups contains an iodine atom.

[0321] In formula (S-2), R S2 and R S3 each independently represents a hydrogen atom or a substituent. S2 and L S3 each independently represents a single bond or a linking group. 3 + represents a sulfonium cation. S2 , R S3 , L S2 and L S3 At least one of the groups contains an iodine atom.

[0322] L in formula (S-1) S1 represents a single bond or a linking group. S1 The linking group represented by is not particularly limited, but may be —O—, —S—, —CO—, —O—CO—, —O—CO—O—, —SO—, —SO 2 -, -SO-, -NQ-, -NQ-CO-, -CO-NQ-CO-, -NQ-SO 2-, an alkylene group, a cycloalkylene group, an arylene group, a heteroarylene group, and a group formed by combining two or more of these. Q represents a hydrogen atom or a substituent, and preferably represents a hydrogen atom, an alkyl group (preferably having 1 to 10 carbon atoms), a cycloalkyl group (preferably having 3 to 15 carbon atoms), or an aryl group (preferably having 6 to 15 carbon atoms). Q is R S1 or X S1 may be bonded to form a ring.

[0323] L S1 The alkylene group represented by is not particularly limited, but is preferably an alkylene group having 1 to 10 carbon atoms, such as a methylene group, an ethylene group, a propylene group, a butylene group, a hexylene group, or an octylene group, and more preferably an alkylene group having 1 to 6 carbon atoms. S1 The alkylene group represented by may have a substituent.

[0324] L S1 The number of carbon atoms in the cycloalkylene group represented by is not particularly limited, but is preferably 3 to 20, and more preferably 4 to 15. The cycloalkylene group may be a monocyclic cycloalkylene group such as a cyclopentylene group or a cyclohexylene group, or a polycyclic cycloalkylene group such as a norbornylene group, a tetracyclodecanylene group, a tetracyclododecanylene group, or an adamantylene group. One or more methylene groups constituting the cycloalkane ring of the cycloalkylene group may be substituted with a heteroatom such as an oxygen atom, a group having a heteroatom such as a carbonyl group, a sulfonyl group, or an ester bond, or a vinylidene group. Furthermore, one or more ethylene groups constituting the cycloalkane ring of the cycloalkylene group may be substituted with a vinylene group. S1 The cycloalkylene group represented by may have a substituent.

[0325] L S1 The arylene group represented by is not particularly limited, but examples thereof include arylene groups having 6 to 20 carbon atoms, and preferably arylene groups having 6 to 15 carbon atoms. The arylene group is preferably a phenylene group or a naphthylene group, and particularly preferably a phenylene group. S1The arylene group represented by may have a substituent.

[0326] L S1 The heteroarylene group represented by is not particularly limited, but is preferably a heteroarylene group having 3 to 19 carbon atoms, and more preferably a heteroarylene group having 4 to 14 carbon atoms. The heteroarylene group preferably contains at least one heteroatom selected from the group consisting of an oxygen atom, a sulfur atom, and a nitrogen atom as a ring member. S1 The heteroarylene group represented by the formula (I) preferably has 4 to 20 ring atoms, and more preferably 5 to 15 ring atoms. S1 The heteroarylene group represented by may have a substituent.

[0327] X in formula (S-1) S1 represents a single bond or a linking group. S1 The linking group represented by is not particularly limited, but examples thereof include -O-, -S-, -CO-, -O-CO-, -O-CO-O-, -SO-, and -SO 2 -, -SO-, -NQ 1 --, --NQ 1 -CO-, -CO-NQ 1 -CO-, -NQ 1 -SO 2 -, an alkylene group, a cycloalkylene group, an arylene group, a heteroarylene group, and a group formed by combining two or more of these. 1 represents a hydrogen atom or a substituent, and preferably represents a hydrogen atom, an alkyl group (preferably having 1 to 10 carbon atoms), a cycloalkyl group (preferably having 3 to 15 carbon atoms), or an aryl group (preferably having 6 to 15 carbon atoms). 1 is R S1 or L S1 may be bonded to form a ring.

[0328] X S1 The alkylene group represented by is not particularly limited, but is preferably an alkylene group having 1 to 10 carbon atoms, such as a methylene group, an ethylene group, a propylene group, a butylene group, a hexylene group, or an octylene group, and more preferably an alkylene group having 1 to 6 carbon atoms. S1The alkylene group represented by may have a substituent. The substituent is not particularly limited, but examples thereof include the above-mentioned substituent T, and preferred are a hydroxy group, a halogen atom, a cycloalkyl group, an aryl group, etc.

[0329] X S1 The number of carbon atoms in the cycloalkylene group represented by is not particularly limited, but is preferably 3 to 20, and more preferably 4 to 15. The cycloalkylene group may be a monocyclic cycloalkylene group such as a cyclopentylene group or a cyclohexylene group, or a polycyclic cycloalkylene group such as a norbornylene group, a tetracyclodecanylene group, a tetracyclododecanylene group, or an adamantylene group. One or more methylene groups constituting the cycloalkane ring of the cycloalkylene group may be substituted with a heteroatom such as an oxygen atom, a carbonyl group, a sulfonyl group, a group having a heteroatom such as an ester bond, or a vinylidene group. Furthermore, one or more ethylene groups constituting the cycloalkane ring of the cycloalkylene group may be substituted with a vinylene group. S1 The cycloalkylene group represented by may have a substituent. The substituent is not particularly limited, but examples thereof include the above-mentioned substituent T, and preferred are a hydroxy group, a halogen atom, a cycloalkyl group, an aryl group, etc.

[0330] X S1 The arylene group represented by is not particularly limited, but examples thereof include arylene groups having 6 to 20 carbon atoms, and preferably arylene groups having 6 to 15 carbon atoms. The arylene group is preferably a phenylene group or a naphthylene group, and particularly preferably a phenylene group. X S1 The arylene group represented by may have a substituent. The substituent is not particularly limited, but examples thereof include the above-mentioned substituent T, and preferred are a hydroxy group, a halogen atom, a cycloalkyl group, an aryl group, etc.

[0331] X S1The heteroarylene group represented by is not particularly limited, but is preferably a heteroarylene group having 3 to 19 carbon atoms, more preferably a heteroarylene group having 4 to 14 carbon atoms. The heteroarylene group preferably contains at least one heteroatom selected from the group consisting of an oxygen atom, a sulfur atom, and a nitrogen atom as a ring member. S1 The heteroarylene group represented by X preferably has 4 to 20 ring atoms, more preferably 5 to 15 ring atoms. S1 The heteroarylene group represented by may have a substituent. The substituent is not particularly limited, but examples thereof include the above-mentioned substituent T, and preferred are a hydroxy group, a halogen atom, a cycloalkyl group, an aryl group, etc.

[0332] R in formula (S-1) S1 represents a hydrogen atom or a substituent. S1 The substituent represented by is not particularly limited, and examples thereof include the above-mentioned substituent T, and preferred are a halogen atom, an alkyl group, an alkoxy group, an alkylthio group, a cycloalkyl group, a cycloalkyloxy group, a cycloalkylthio group, an aryl group, a heteroaryl group, an aryloxy group, an arylthio group, and the like.

[0333] R S1 The halogen atom represented by is preferably a fluorine atom, a chlorine atom, a bromine atom or an iodine atom, more preferably a fluorine atom or an iodine atom, and even more preferably an iodine atom.

[0334] R S1 The alkyl group represented by may be either linear or branched. The number of carbon atoms in the alkyl group is not particularly limited, but is preferably 1 to 20, more preferably 1 to 10, and particularly preferably 1 to 5. The alkyl group may have a substituent. Examples of the alkyl group include a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, an isobutyl group, a t-butyl group, and a trifluoromethyl group. R S1 The explanation, specific examples and preferred ranges of the alkyl groups contained in the alkoxy group and alkylthio group represented by R S1 is the same as the alkyl group represented by

[0335] R S1 The cycloalkyl group represented by may be monocyclic or polycyclic. The cycloalkyl group preferably has 3 to 20 carbon atoms, more preferably 4 to 15 carbon atoms. Examples of the cycloalkyl group include a cyclopentyl group, a cyclohexyl group, a norbornyl group, a tetracyclodecanyl group, a tetracyclododecanyl group, and an adamantyl group. The cycloalkyl group may have a substituent. One or more methylene groups constituting the cycloalkane ring of the cycloalkyl group may be replaced with a heteroatom such as an oxygen atom, a carbonyl group, a sulfonyl group, or a group having a heteroatom such as an ester bond, or a vinylidene group. Furthermore, in the cycloalkyl group, one or more ethylene groups constituting the cycloalkane ring may be replaced with a vinylene group. R S1 The explanation, specific examples and preferred ranges of the cycloalkyl group contained in the cycloalkyloxy group and cycloalkylthio group represented by R S1 is the same as the cycloalkyl group represented by

[0336] R S1 The aryl group represented by is preferably an aryl group having 6 to 20 carbon atoms, more preferably an aryl group having 6 to 15 carbon atoms, further preferably a phenyl group or a naphthyl group, and particularly preferably a phenyl group. The aryl group may have a substituent. S1 The explanation, specific examples and preferred ranges of the aryl group contained in the aryloxy group and arylthio group represented by R S1 is the same as the aryl group represented by

[0337] R S1 The heteroaryl group represented by is preferably a heteroaryl group having 3 to 19 carbon atoms, more preferably a heteroaryl group having 4 to 14 carbon atoms. The heteroaryl group preferably contains at least one heteroatom selected from the group consisting of an oxygen atom, a sulfur atom, and a nitrogen atom as a ring member. S1The number of ring atoms of the heteroaryl group represented by is preferably 4 to 20, and more preferably 5 to 15. Examples of the heteroaryl group include a pyrrolyl group, a furanyl group, a thiophenyl group, an indolyl group, a benzofuranyl group, and a benzothiophenyl group. The heteroaryl group may have a substituent.

[0338] However, R in formula (S-1) S1 , L S1 and X S1 At least one of R contains an iodine atom. S1 , L S1 and X S1 The total number of iodine atoms contained in R is 1 or more, and preferably 2 or more. S1 and X S1 Preferably, at least one of R S1 More preferably, R contains an iodine atom. S1 In an embodiment where R contains an iodine atom, S1 represents an iodine atom, or R S1 and the substituent represented by the formula (I) (for example, an alkyl group, an alkoxy group, an alkylthio group, a cycloalkyl group, a cycloalkyloxy group, a cycloalkylthio group, an aryl group, a heteroaryl group, an aryloxy group, an arylthio group, etc.) has an iodine atom.

[0339] M in formula (S-1) 2 + represents a sulfonium cation. 2 + The description, specific examples and preferred range of the sulfonium cation represented by M in the above formula (T-1) are 1 + It is the same as in

[0340] Preferred embodiments of the compound represented by formula (S-1) include

[0118] and

[0144] of WO 2023 / 157455,

[0026] to

[0028] of JP-A 2018-155902, and

[0147] of JP-A 2023-108593.

[0341] L in formula (S-2) S2and L S3 each independently represents a single bond or a linking group. S2 and L S3 The linking group represented by is not particularly limited, but may be —O—, —S—, —CO—, —O—CO—, —O—CO—O—, —SO—, —SO 2 -, -SO-, -NQ 2 --, --NQ 2 -CO-, -CO-NQ 2 -CO-, -NQ 2 -SO 2 -, an alkylene group, a cycloalkylene group, an arylene group, a heteroarylene group, and a group formed by combining two or more of these. 2 represents a hydrogen atom or a substituent, and preferably represents a hydrogen atom, an alkyl group (preferably having 1 to 10 carbon atoms), a cycloalkyl group (preferably having 3 to 15 carbon atoms), or an aryl group (preferably having 6 to 15 carbon atoms). 2 is R S2 or R S3 may be bonded to form a ring.

[0342] L S2 and L S3 The alkylene group represented by is not particularly limited, but is preferably an alkylene group having 1 to 10 carbon atoms, such as a methylene group, an ethylene group, a propylene group, a butylene group, a hexylene group, or an octylene group, and more preferably an alkylene group having 1 to 6 carbon atoms. S2 and L S3 The alkylene group represented by may have a substituent.

[0343] L S2 and L S3The number of carbon atoms in the cycloalkylene group represented by is not particularly limited, but is preferably 3 to 20, and more preferably 4 to 15. The cycloalkylene group may be a monocyclic cycloalkylene group such as a cyclopentylene group or a cyclohexylene group, or a polycyclic cycloalkylene group such as a norbornylene group, a tetracyclodecanylene group, a tetracyclododecanylene group, or an adamantylene group. One or more methylene groups constituting the cycloalkane ring of the cycloalkylene group may be substituted with a heteroatom such as an oxygen atom, a group having a heteroatom such as a carbonyl group, a sulfonyl group, or an ester bond, or a vinylidene group. Furthermore, one or more ethylene groups constituting the cycloalkane ring of the cycloalkylene group may be substituted with a vinylene group. S2 and L S3 The cycloalkylene group represented by may have a substituent.

[0344] L S2 and L S3 The arylene group represented by is not particularly limited, but examples thereof include arylene groups having 6 to 20 carbon atoms, and preferably arylene groups having 6 to 15 carbon atoms. The arylene group is preferably a phenylene group or a naphthylene group, and particularly preferably a phenylene group. S2 and L S3 The arylene group represented by may have a substituent.

[0345] L S2 and L S3 The heteroarylene group represented by is not particularly limited, but is preferably a heteroarylene group having 3 to 19 carbon atoms, and more preferably a heteroarylene group having 4 to 14 carbon atoms. The heteroarylene group preferably contains at least one heteroatom selected from the group consisting of an oxygen atom, a sulfur atom, and a nitrogen atom as a ring member. S2 and L S3 The heteroarylene group represented by the formula (I) preferably has 4 to 20 ring atoms, and more preferably 5 to 15 ring atoms. S2 and L S3 The heteroarylene group represented by may have a substituent.

[0346] R in formula (S-2) S2 and R S3 R each independently represents a hydrogen atom or a substituent. S2 and R S3 The substituent represented by is not particularly limited, and examples thereof include the above-mentioned substituent T, and preferred are a halogen atom, an alkyl group, an alkoxy group, an alkylthio group, a cycloalkyl group, a cycloalkyloxy group, a cycloalkylthio group, an aryl group, a heteroaryl group, an aryloxy group, an arylthio group, and the like.

[0347] R S2 and R S3 The halogen atom represented by is preferably a fluorine atom, a chlorine atom, a bromine atom or an iodine atom, more preferably a fluorine atom or an iodine atom, and even more preferably an iodine atom.

[0348] R S2 and R S3 The alkyl group represented by may be either linear or branched. The number of carbon atoms in the alkyl group is not particularly limited, but is preferably 1 to 20, more preferably 1 to 10, and particularly preferably 1 to 5. The alkyl group may have a substituent. Examples of the alkyl group include a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, an isobutyl group, a t-butyl group, and a trifluoromethyl group. R S2 and R S3 The explanation, specific examples and preferred ranges of the alkyl groups contained in the alkoxy group and alkylthio group represented by R S2 and R S3 is the same as the alkyl group represented by

[0349] R S2 and R S3The cycloalkyl group represented by may be monocyclic or polycyclic. The cycloalkyl group preferably has 3 to 20 carbon atoms, more preferably 4 to 15 carbon atoms. Examples of the cycloalkyl group include a cyclopentyl group, a cyclohexyl group, a norbornyl group, a tetracyclodecanyl group, a tetracyclododecanyl group, and an adamantyl group. The cycloalkyl group may have a substituent. One or more methylene groups constituting the cycloalkane ring of the cycloalkyl group may be replaced with a heteroatom such as an oxygen atom, a carbonyl group, a sulfonyl group, or a group having a heteroatom such as an ester bond, or a vinylidene group. Furthermore, in the cycloalkyl group, one or more ethylene groups constituting the cycloalkane ring may be replaced with a vinylene group. R S2 and R S3 The explanation, specific examples and preferred ranges of the cycloalkyl group contained in the cycloalkyloxy group and cycloalkylthio group represented by R S2 and R S3 is the same as the cycloalkyl group represented by

[0350] R S2 and R S3 The aryl group represented by is preferably an aryl group having 6 to 20 carbon atoms, more preferably an aryl group having 6 to 15 carbon atoms, further preferably a phenyl group or a naphthyl group, and particularly preferably a phenyl group. The aryl group may have a substituent. S2 and R S3 The explanation, specific examples and preferred ranges of the aryl group contained in the aryloxy group and arylthio group represented by R S2 and R S3 is the same as the aryl group represented by

[0351] R S2 and R S3 The heteroaryl group represented by is preferably a heteroaryl group having 3 to 19 carbon atoms, more preferably a heteroaryl group having 4 to 14 carbon atoms. The heteroaryl group preferably contains at least one heteroatom selected from the group consisting of an oxygen atom, a sulfur atom, and a nitrogen atom as a ring member. S2 and R S3The number of ring atoms of the heteroaryl group represented by is preferably 4 to 20, and more preferably 5 to 15. Examples of the heteroaryl group include a pyrrolyl group, a furanyl group, a thiophenyl group, an indolyl group, a benzofuranyl group, and a benzothiophenyl group. The heteroaryl group may have a substituent.

[0352] However, R in formula (S-2) S2 , R S3 , L S2 and L S3 At least one of R contains an iodine atom. S2 , R S3 , L S2 and L S3 The total number of iodine atoms contained in R is 1 or more, and preferably 2 or more. S2 and R S3 Preferably, at least one of R contains an iodine atom. S2 and R S3 In an embodiment where R contains an iodine atom, S2 and R S3 represents an iodine atom, or R S2 and R S3 and the substituent represented by the formula (I) (for example, an alkyl group, an alkoxy group, an alkylthio group, a cycloalkyl group, a cycloalkyloxy group, a cycloalkylthio group, an aryl group, a heteroaryl group, an aryloxy group, an arylthio group, etc.) has an iodine atom.

[0353] M in formula (S-2) 3 + represents a sulfonium cation. 3 + The description, specific examples and preferred range of the sulfonium cation represented by M in the above formula (T-1) are 1 + Preferred embodiments of the compound represented by formula (S-2) include those described in

[0039] to

[0047] of JP-A-2021-128331.

[0354] The acid diffusion controller is a compound other than the compound represented by formula (S-1) above, and may also be a compound other than the compound represented by formula (S-2) above. The type of acid diffusion controller is not particularly limited, and examples thereof include a basic compound (CA), a low-molecular-weight compound (CB) having a nitrogen atom and a group that is cleaved by the action of an acid, and a compound (CC) whose acid diffusion control ability is reduced or eliminated by irradiation with actinic rays or radiation. Examples of the compound (CC) include an onium salt compound (CD) of an acid that is a weaker acid than the acid generated from the photoacid generator, and a basic compound (CE) whose basicity is reduced or eliminated by irradiation with actinic rays or radiation.

[0355] (Basic Compound (CA)) As the basic compound (CA), compounds having structures represented by the following formulae (A) to (E) are preferred.

[0356]

[0357] In formulas (A) and (E), R 200 , R 201 and R 202 may be the same or different, and each independently represents a hydrogen atom, an alkyl group (preferably having 1 to 20 carbon atoms), a cycloalkyl group (preferably having 3 to 20 carbon atoms), or an aryl group (preferably having 6 to 20 carbon atoms). 200 , R 201 and R 202 At least two of R may be bonded to form a ring. 203 , R 204 , R 205 and R 206 may be the same or different, and each independently represents an alkyl group having 1 to 20 carbon atoms. In formulas (B), (C), (D), and (E), * represents a bonding position.

[0358] R in formulas (A) and (E) 200 , R 201 , R 202 , R 203 , R 204 , R 205 and R 206The alkyl group or cycloalkyl group represented by may have a substituent or may be unsubstituted. With regard to the alkyl group, the alkyl group having a substituent is preferably an aminoalkyl group having 1 to 20 carbon atoms, a hydroxyalkyl group having 1 to 20 carbon atoms, or a cyanoalkyl group having 1 to 20 carbon atoms. R in formulas (A) and (E) 200 , R 201 , R 202 , R 203 , R 204 , R 205 and R 206 The alkyl group or cycloalkyl group represented by is more preferably unsubstituted.

[0359] Examples of the basic compound (CA) include guanidine, aminopyrrolidine, pyrazole, pyrazoline, piperazine, aminomorpholine, aminoalkylmorpholine, and piperidine. The basic compound (CA) may be a compound having at least one structure selected from the group consisting of an imidazole structure, a diazabicyclo structure, an onium hydroxide structure, an onium carboxylate structure, a trialkylamine structure, an aniline structure, and a pyridine structure. The basic compound (CA) may be an alkylamine derivative having at least one structure selected from the group consisting of a hydroxyl group and an ether bond, or an aniline derivative having at least one structure selected from the group consisting of a hydroxyl group and an ether bond.

[0360] The difference between the pKa of the conjugate acid of the basic compound (CA) and the pKa of the acid generated from the photoacid generator (the value obtained by subtracting the pKa of the acid generated from the photoacid generator from the pKa of the conjugate acid of the basic compound (CA)) is preferably 1.00 or more, more preferably 1.00 to 14.00, and even more preferably 2.00 to 13.00. The pKa of the conjugate acid of the basic compound (CA) varies depending on the type of photoacid generator used, but is, for example, preferably 1.00 to 14.00, more preferably 3.00 to 13.00, and even more preferably 3.50 to 12.50.

[0361] (Onium Salt Compound (CD) of Acid That Is Relatively Weaker than the Acid Generated from a Photoacid Generator) The compound (CD) may be a compound that generates an acid upon irradiation with actinic rays or radiation. The compound (CD) is preferably a compound that generates an acid that has a pKa that is 1.00 or more higher than that of the acid generated from the photoacid generator. The difference between the pKa of the acid generated from the compound (CD) and the pKa of the acid generated from the photoacid generator (the value obtained by subtracting the pKa of the acid generated from the photoacid generator from the pKa of the acid generated from the compound (CD)) is preferably 1.00 or more, more preferably 1.00 to 10.00, even more preferably 1.00 to 5.00, and particularly preferably 1.00 to 3.00. The pKa of the acid generated from compound (CD) varies depending on the type of photoacid generator used, but is preferably, for example, 0.50 to 10.00, more preferably 0.80 to 5.00, and even more preferably 1.00 to 5.00.

[0362] The compound (CD) is preferably an onium salt compound consisting of an anion and a cation. Examples of the compound (CD) include "M + X - Examples of compounds include compounds (onium salts) represented by the formula "M + represents an organic cation, and X - represents an organic anion. + As the photoacid generator, M + The same as above can be mentioned. - Examples of the anion include the anions represented by formulas (d1-1) to (d1-4) described in the description of the photoacid generator, and the anion represented by formula (d1-1) or the anion represented by formula (d1-2) is preferred.

[0363] Specific examples of the basic compound (CA) include those described in paragraphs

[0132] to

[0136] of WO 2020 / 066824, and specific examples of the basic compound (CE) whose basicity is reduced or eliminated by irradiation with actinic rays or radiation include those described in paragraphs

[0137] to

[0155] of WO 2020 / 066824, and those described in paragraph

[0164] of WO 2020 / 066824. Specific examples of the low molecular weight compound (CB) having a nitrogen atom and having a group that leaves under the action of an acid include those described in paragraphs

[0156] to

[0163] of WO 2020 / 066824. Specific examples of the onium salt compound (CD) that is a weaker acid than the acid generated from the photoacid generator or the like include those described in paragraphs

[0305] to

[0314] of WO 2020 / 158337.

[0364] In addition to the above, for example, known compounds disclosed in paragraphs

[0627] to

[0664] of U.S. Patent Application Publication No. 2016 / 0070167A1, paragraphs

[0095] to

[0187] of U.S. Patent Application Publication No. 2015 / 0004544A1, paragraphs

[0403] to

[0423] of U.S. Patent Application Publication No. 2016 / 0237190A1, and paragraphs

[0259] to

[0328] of U.S. Patent Application Publication No. 2016 / 0274458A1 can be suitably used as the acid diffusion controller.

[0365] The molecular weight of the acid diffusion controller is not particularly limited, but is preferably from 100 to 3,000, more preferably from 150 to 2,500, and even more preferably from 200 to 2,000.

[0366] The acid diffusion controller is also preferably a compound that generates an acid having a pKa of 0 or more upon irradiation with actinic rays or radiation.

[0367] When the resist composition contains an acid diffusion controller, the content of the acid diffusion controller (or the total content if multiple types are present) is preferably 0.1 to 15.0 mass%, and more preferably 1.0 to 15.0 mass%, relative to the total solids content of the composition. In the resist composition, one type of acid diffusion controller may be used alone, or two or more types may be used in combination.

[0368] In a preferred embodiment, at least one of the photoacid generator and the acid diffusion controller in the resist composition contains a sulfonium cation and an anion having an iodine atom. The sulfonium cation preferably contains a halogen atom. The anion having an iodine atom preferably contains two or more iodine atoms.

[0369] At least one of the photoacid generator and the acid diffusion controller preferably contains a sulfonium cation having a halogen atom and an anion having two or more iodine atoms.

[0370] [Hydrophobic Resin] The resist composition may further contain a hydrophobic resin (also referred to as hydrophobic resin (D)) different from resin (A). The hydrophobic resin is preferably designed so that it is unevenly distributed on the surface of the resist film, but unlike surfactants, it does not necessarily have to have a hydrophilic group in its molecule, and it does not necessarily have to contribute to uniform mixing of the polar substance and the non-polar substance.

[0371] The hydrophobic resin contains fluorine atoms, silicon atoms, and CH atoms contained in the side chain portion of the resin in order to be unevenly distributed on the surface layer of the film. 3 It is preferable to have one or more of the partial structures, and more preferably two or more. The hydrophobic resin preferably has a hydrocarbon group having 5 or more carbon atoms. These groups may be present in the main chain of the resin or may be substituted on a side chain. Examples of hydrophobic resins include the compounds described in paragraphs

[0275] to

[0279] of WO 2020 / 004306.

[0372] When the resist composition contains a hydrophobic resin, the content of the hydrophobic resin is preferably 0.01 to 20.0 mass%, and more preferably 0.1 to 15.0 mass%, based on the total solids content of the resist composition. Only one type of hydrophobic resin may be used, or two or more types may be used. When two or more types are used, the total content thereof preferably falls within the above-mentioned preferred content range.

[0373] [Surfactant] The resist composition may contain a surfactant. When the resist composition contains a surfactant, it is possible to form a pattern with better adhesion and fewer development defects. The surfactant is preferably a fluorine-based and / or silicon-based surfactant. Examples of the fluorine-based and / or silicon-based surfactant include the surfactants disclosed in paragraphs

[0218] and

[0219] of WO 2018 / 193954.

[0374] When the resist composition contains a surfactant, the content of the surfactant is preferably 0.0001 to 2.0 mass%, more preferably 0.0005 to 1.0 mass%, and even more preferably 0.1 to 1.0 mass%, relative to the total solids content of the resist composition. One type of surfactant may be used, or two or more types may be used. When two or more types are used, it is preferable that the total content thereof is within the above-mentioned preferred content range.

[0375] [Solvent] The resist composition contains a solvent. The solvent preferably contains (M1) propylene glycol monoalkyl ether carboxylate and (M2) at least one selected from the group consisting of propylene glycol monoalkyl ether, lactate ester, acetate ester, alkoxypropionate ester, chain ketone, cyclic ketone, lactone, and alkylene carbonate. The solvent may further contain components other than components (M1) and (M2).

[0376] Combining the above-mentioned solvent with the above-mentioned resin is preferable in terms of improving the coatability of the resist composition and reducing the number of development defects in the pattern. The above-mentioned solvent has a good balance of the solubility, boiling point, and viscosity of the above-mentioned resin, so it is possible to suppress unevenness in the film thickness of the resist film and the occurrence of precipitates during spin coating. Details of component (M1) and component (M2) are described in paragraphs

[0218] to

[0226] of WO 2020 / 004306, the contents of which are incorporated herein by reference.

[0377] When the solvent further contains components other than the components (M1) and (M2), the content of the components other than the components (M1) and (M2) is preferably 5 to 30 mass % based on the total amount of the solvent.

[0378] The content of the solvent in the resist composition is preferably determined so that the solids concentration is 0.5 to 30 mass %, and more preferably 1 to 20 mass %, which further improves the coatability of the resist composition.

[0379] [Other Additives] The resist composition may further contain at least one selected from the group consisting of a dissolution inhibiting compound, a dye, a plasticizer, a photosensitizer, a light absorber, and a compound that promotes solubility in a developer (for example, a phenolic compound having a molecular weight of 1000 or less, or an alicyclic or aliphatic compound containing a carboxyl group). The "dissolution inhibiting compound" is a compound having a molecular weight of 3000 or less that decomposes under the action of an acid and thereby reduces its solubility in an organic developer.

[0380] The content of the other additives is not particularly limited, but may be 20.0% by mass or less, 10.0% by mass or less, or 5.0% by mass or less, based on the total solid content of the resist composition. Only one type of other additive may be used, or two or more types may be used. When two or more types are used, it is preferable that the total content thereof is within the above-mentioned preferred content range.

[0381] The resist composition may also contain water as an impurity. When water is contained as an impurity, the lower the content of water, the more preferable, but the resist composition may contain 1 to 30,000 ppm by mass of water relative to the total solid content of the resist composition. The resist composition may also contain residual monomers as impurities (for example, monomers derived from the raw material monomers used in the synthesis of the resin (A)). When water is contained as an impurity, the lower the content of residual monomers, the more preferable, but the resist composition may contain 1 to 30,000 ppm by mass of water relative to the total solid content of the resist composition.

[0382] <Actinic Ray- or Radiation-Sensitive Resin Composition> The present invention also relates to an actinic ray- or radiation-sensitive resin composition (also referred to as the "composition of the present invention") that contains a resin (A) whose polarity increases under the action of an acid and that contains a repeating unit represented by the general formula (P1) above, a compound (B) that generates an acid upon irradiation with actinic rays or radiation, and a solvent (E), and that is used to form a pattern by development with an organic treatment liquid containing butyl acetate and a hydrocarbon having from 9 to 12 carbon atoms. The composition of the present invention is the same as the actinic ray- or radiation-sensitive resin composition used in step (1) of the pattern formation method of the present invention described above. The organic treatment liquid containing butyl acetate and a hydrocarbon having from 9 to 12 carbon atoms is also the same as the organic treatment liquid used in step (3) of the pattern formation method of the present invention described above. The present invention also relates to a resist film formed using the actinic ray- or radiation-sensitive resin composition described above. The method for forming the resist film and the description of the resist film are the same as those in the step (1) of the pattern forming method of the present invention.

[0383] <Method for manufacturing an electronic device> This specification also relates to a method for manufacturing an electronic device, including the above-mentioned pattern formation method, and an electronic device manufactured by this manufacturing method. Preferred embodiments of the electronic device of this specification include those installed in electrical and electronic devices (such as home appliances, office automation (OA), media-related devices, optical devices, and communication devices).

[0384] The present invention will be described in more detail below with reference to the following examples. The materials, amounts used, ratios, treatment details, and treatment procedures shown in the following examples can be appropriately changed without departing from the spirit of the present invention. Therefore, the scope of the present invention should not be construed as being limited by the following examples.

[0385] The various components used in the resist compositions of the examples and comparative examples are shown below.

[0386] <Resin (A)> A-1 to A-32 were used as resin (A). AR-1 was used as a resin other than resin (A). However, in the table below, AR-1 is listed in the "Resin (A)" column for convenience. A-1 to A-32 and AR-1 contain the repeating units shown in Table 1 below in the amounts shown in Table 1 below. Table 1 also lists the weight average molecular weight (Mw) and dispersity (Mw / Mn) of each resin. The content of each repeating unit is the content ratio (molar ratio) of each repeating unit to all repeating units contained in each resin. The weight average molecular weight (Mw) and dispersity (Mw / Mn) of the resin were measured by GPC (carrier: tetrahydrofuran (THF)) (amounts converted into polystyrene). The content of the repeating units was 13 Measurement was performed by C-NMR (nuclear magnetic resonance).

[0387]

[0388] The structural formulae of the repeating units are shown below: For some repeating units, the structural formula of the corresponding monomer is also shown.

[0389]

[0390]

[0391]

[0392]

[0393]

[0394]

[0395] <Photoacid Generator (B)> B-1 to B-13 were used as the photoacid generator (B).

[0396]

[0397]

[0398]

[0399] <Acid Diffusion Controller (C)> As the acid diffusion controller, C-1 to C-13 were used.

[0400]

[0401]

[0402]

[0403] <Solvents> The solvents used are as follows: E-1: Propylene glycol monomethyl ether acetate (PGMEA) E-2: Propylene glycol monomethyl ether (PGME) E-3: Cyclohexanone E-4: γ-butyrolactone E-5: 2-heptanone E-6: Cyclopentanone E-7: Ethyl lactate

[0404] <Developer (organic processing solution)> The developer used is shown below. R-01: Butyl acetate: n-undecane = 95:5 (mass ratio) R-02: Butyl acetate: n-undecane = 90:10 (mass ratio) R-03: Butyl acetate: n-undecane = 85:15 (mass ratio) R-04: Butyl acetate: n-undecane = 80:20 (mass ratio) R-05: Butyl acetate: n-undecane = 75:25 (mass ratio) R-06: Butyl acetate: n-undecane = 70:30 (mass ratio) R-07: Butyl acetate: n-undecane = 65:35 (mass ratio) R-08: Butyl acetate: n-undecane = 60:40 (mass ratio) R-09: Butyl acetate: n-dodecane = 90:10 (mass ratio) R-10: Butyl acetate: n-decane = 90:10 (mass ratio) R-11: Butyl acetate: n-nonane = 85:15 (mass ratio) R-12: Butyl acetate R-13: Butyl acetate: n-octane = 90:10 (mass ratio) R-14: Butyl acetate: n-tridecane = 90:10 (mass ratio)

[0405] <Preparation of Resist Compositions> The various components shown in Table 2 were mixed to obtain mixed solutions, and the resulting mixed solutions were then filtered through a polyethylene filter with a pore size of 0.03 μm to prepare resist compositions (Re-1 to Re-35 and Re-36). The solids concentration of the resist compositions was 3 mass %. The solids content refers to all components other than the solvent. In the table, the column titled "Content (mass %)" indicates the content (mass %) of each component relative to the total solids content in the resist composition.

[0406]

[0407] [Examples 1 to 35, Comparative Examples 1 to 4] <Pattern Forming Method (1): EUV Exposure, Organic Solvent Development (Negative)> An organic film AL412 (manufactured by Brewer Science) was applied to a silicon wafer and baked at 205°C for 60 seconds to form a film with a thickness of 5 nm. A resist composition shown in Table 3 was applied thereon and baked at 90°C for 60 seconds to form a 45 nm resist film. The silicon wafer having the resist film obtained by the above procedure was subjected to pattern irradiation with a uniform exposure dose over the entire wafer surface using an EUV exposure device (Micro Exposure Tool manufactured by Exitech, NA (numerical aperture) 0.3, Quadruple, outer sigma 0.68, inner sigma 0.36) as an exposure source and an exposure mask (line / space = 1 / 1). After exposure, the resist was baked (PEB) on a hot plate at 110° C. for 60 seconds, then developed for 30 seconds with a developer shown in Table 3, and spin-dried to obtain a negative pattern.

[0408] The patterns obtained by the above pattern forming method were evaluated for each evaluation item by the following methods.

[0409] [Sensitivity] The obtained line and space pattern was observed using a length-measuring scanning electron microscope (SEM, S-9380II manufactured by Hitachi, Ltd.). The exposure dose (mJ / cm) required to resolve a 1:1 line and space pattern with a line width of 20 nm was 2 ) was taken as sensitivity (Eop). The smaller this value, the better the performance.

[0410] [LWR Performance] For a 1:1 line-and-space pattern with a line width of 20 nm resolved at an exposure dose indicating the above sensitivity (Eop), 3σ (nm), which is three times the standard deviation (σ) of the measured line width, was calculated and used as an index of LWR. Specifically, one shot was defined as 3.5 mm vertically (y-axis direction) and 6.5 mm horizontally (x-axis direction), and exposure was performed on the wafer with 8 columns in the x direction and 29 rows in the y direction, for a total of 232 shots. Ten length measurement photographs (5 lines per photograph) were measured for each shot, and the average of the measurement values ​​of the 10 photographs was used as the length measurement value of that shot. The standard deviation of the measurement values ​​for the 232 shots was tripled to obtain 3σ. A smaller value indicates better performance.

[0411] <L / S Resolution> A test was conducted to form a line and space pattern by gradually decreasing the exposure dose from the exposure dose that showed the above sensitivity. In this case, the minimum dimension of the pattern that could be resolved without collapsing was determined using a critical dimension scanning electron microscope (SEM, S-9380II manufactured by Hitachi, Ltd.). This was taken as the resolution (nm). The smaller this value, the better the limiting resolution and the more precisely a pattern with a finer line width can be formed.

[0412] The results are shown in Table 3 below.

[0413]

[0414] The above results demonstrate that the resist compositions and patterning methods used in the examples are capable of forming ultrafine patterns (for example, line widths of 20 nm or less) that are excellent in sensitivity, LWR performance, and resolution.

[0415] The present invention provides a pattern forming method and an actinic-ray- or radiation-sensitive resin composition capable of forming an ultrafine pattern (e.g., a line width of 20 nm or less) that is excellent in sensitivity, LWR performance, and resolution. The present invention also provides a method for manufacturing an electronic device that includes the pattern forming method.

[0416] Although the present invention has been described in detail and with reference to specific embodiments, it will be apparent to those skilled in the art that various changes and modifications can be made without departing from the spirit and scope of the present invention. This application is based on a Japanese patent application (Patent Application No. 2024-093268) filed on June 7, 2024, the contents of which are incorporated herein by reference.

Claims

1. A pattern formation method comprising: (1) a step of forming a film using an actinic ray- or radiation-sensitive resin composition containing a resin (A) whose polarity increases under the action of acid, which contains a repeating unit represented by the following general formula (P1), a compound (B) that generates an acid upon exposure to actinic rays or radiation, and a solvent (E); (2) a step of exposing the film to light; and (3) a step of developing the exposed film with an organic processing liquid containing butyl acetate and a hydrocarbon having from 9 to 12 carbon atoms. In general formula (P1), R A represents a hydrogen atom or an alkyl group having 1 to 5 carbon atoms. 1 represents a single bond or a divalent linking group. 1 represents a single bond or a divalent linking group. Ra represents a group that leaves when acted upon by an acid. Rb represents a hydrogen atom or a chain hydrocarbon group. m represents an integer of 0 to 3. n represents an integer of 1 or greater, provided that n≦m×2+4 is satisfied. When n represents an integer of 2 or greater, multiple Rb's may be the same or different.

2. The pattern forming method according to claim 1, wherein the resin (A) has an acid group.

3. The pattern formation method according to claim 1, wherein Rb in said general formula (P1) represents a hydrogen atom.

4. The pattern forming method according to claim 1, wherein Ra in general formula (P1) contains a cyclic structure.

5. The pattern forming method according to claim 4, wherein Ra in the general formula (P1) is a group represented by the following general formula (1A): In general formula (1A), R G1 ~R G2 R each independently represents an alkyl group or an alkenyl group, and are bonded to each other to form an alicyclic hydrocarbon group having 3 to 20 carbon atoms together with the carbon atom to which they are bonded. G3 represents an alkyl group, a cycloalkyl group, an alkenyl group, or an aryl group. * represents a bond.

6. The pattern forming method according to claim 1, wherein Ra in the general formula (P1) is a group represented by the following general formula (1B): In general formula (1B), R H1 ~R H3 each independently represents an alkyl group, a cycloalkyl group, an alkenyl group, or an aryl group. H1 ~R H3 At least one of R represents an alkenyl group. H1 and R H2 may be bonded to each other to form, together with the carbon atoms to which they are bonded, an alicyclic hydrocarbon group having 3 to 20 carbon atoms. * represents a bond.

7. R in the general formula (1B) H1 and R H2 7. The pattern formation method according to claim 6, wherein the groups bond to each other to form, together with the carbon atoms to which they are bonded, an alicyclic hydrocarbon group having 3 to 20 carbon atoms.

8. R in the general formula (1B) H1 and R H2 are bonded to each other to form an alicyclic hydrocarbon group having 3 to 20 carbon atoms together with the carbon atoms to which they are bonded, and R H3 The pattern forming method according to claim 6 , wherein represents an alkenyl group.

9. The pattern forming method according to claim 1, wherein m in said general formula (P1) is 0.

10. The pattern forming method according to claim 1, wherein said resin (A) has at least one selected from the group consisting of a lactone group, a carbonate group, a sultone group, and a saturated hydrocarbon group having a hydroxyl group.

11. The pattern forming method according to claim 1, wherein the content of the repeating unit represented by the general formula (P1) is 55 mol % or more based on all repeating units in the resin (A).

12. The pattern forming method according to claim 1, wherein the weight average molecular weight of the resin (A) is 8,000 or more.

13. The pattern forming method according to claim 1, wherein the dispersity of said resin (A) is less than 1.

60.

14. An actinic ray- or radiation-sensitive resin composition comprising: a resin (A) whose polarity increases under the action of acid and which contains a repeating unit represented by the following general formula (P1); a compound (B) that generates an acid upon exposure to actinic rays or radiation; and a solvent (E), said actinic ray- or radiation-sensitive resin composition being used to form a pattern by development with an organic processing liquid containing butyl acetate and a hydrocarbon having from 9 to 12 carbon atoms. In general formula (P1), R A represents a hydrogen atom or an alkyl group having 1 to 5 carbon atoms. 1 represents a single bond or a divalent linking group. 1 represents a single bond or a divalent linking group. Ra represents a group that leaves when acted upon by an acid. Rb represents a hydrogen atom or a chain hydrocarbon group. m represents an integer of 0 to 3. n represents an integer of 1 or greater, provided that n≦m×2+4 is satisfied. When n represents an integer of 2 or greater, multiple Rb's may be the same or different.

15. A method for manufacturing an electronic device, comprising the pattern formation method according to any one of claims 1 to 13.

Citation Information

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