Semiconductor module and communication device

Abstract

A semiconductor module according to the present invention comprises a first semiconductor element, a second semiconductor element, a first connection member, and a second connection member. At the first semiconductor element, a first diode is formed between a first electrode and a third electrode, and a second diode is formed between a second electrode and the third electrode. At the second semiconductor element, a third diode is formed between a fourth electrode and a sixth electrode, and a fourth diode is formed between a fifth electrode and the sixth electrode. The first connection member connects the first electrode and the sixth electrode. The second connection member connects the fourth electrode and the third electrode.

Description

Semiconductor module and communication device

[0001] The present disclosure relates to a semiconductor module and a communication device.

[0002] Patent Document 1 discloses a semiconductor device used in a conventional communication system. This semiconductor device is connected to communication lines, such as a high-side line and a low-side line, of the communication system and functions as a bidirectional Zener diode. The communication system may be momentarily subjected to high voltages due to electrostatic discharge (ESD) or the like. In such cases, the semiconductor device is capable of suppressing the effects on peripheral circuits.

[0003] Japanese Patent Application Laid-Open No. 2019-125763

[0004] [Summary] It is preferable that a semiconductor device has a higher ESD resistance, that is, a higher withstand voltage.

[0005] An object of the present disclosure is to provide an improved semiconductor module and a communication device including the semiconductor module. In particular, in view of the above-mentioned circumstances, an object of the present disclosure is to provide a semiconductor module (and a communication device including the semiconductor module) that can increase the withstand voltage.

[0006] A semiconductor module provided by a first aspect of the present disclosure includes: a first semiconductor element having a first semiconductor portion, a second semiconductor portion, and a third semiconductor portion; a first electrode electrically connected to the first semiconductor portion, a second electrode electrically connected to the second semiconductor portion, and a third electrode electrically connected to the third semiconductor portion; and a second semiconductor element having a fourth semiconductor portion, a fifth semiconductor portion, and a sixth semiconductor portion; a fourth electrode electrically connected to the fourth semiconductor portion, a fifth electrode electrically connected to the fifth semiconductor portion, and a sixth electrode electrically connected to the sixth semiconductor portion, wherein in the first semiconductor element, the third semiconductor portion is electrically interposed between the first semiconductor portion and the second semiconductor portion, and the first semiconductor portion and the second semiconductor portion are electrically connected between the first electrode and the third electrode. A first diode including the third semiconductor portion is formed, a second diode including the second semiconductor portion and the third semiconductor portion is formed between the second electrode and the third electrode, in the second semiconductor element, the sixth semiconductor portion is electrically interposed between the fourth semiconductor portion and the fifth semiconductor portion, a third diode including the fourth semiconductor portion and the sixth semiconductor portion is formed between the fourth electrode and the sixth electrode, a fourth diode including the fifth semiconductor portion and the sixth semiconductor portion is formed between the fifth electrode and the sixth electrode, and the second semiconductor element is provided with a first connecting member connecting the first electrode and the sixth electrode and a second connecting member connecting the fourth electrode and the third electrode.

[0007] A communication device provided by a second aspect of the present disclosure includes a communication line for signal communication, and the semiconductor module provided by the first aspect of the present disclosure connected to the communication line.

[0008] Other features and advantages of the present disclosure will become more apparent from the following detailed description taken in conjunction with the accompanying drawings.

[0009] FIG. 1 is a plan view showing a semiconductor module according to a first embodiment of the present disclosure. FIG. 2 is a cross-sectional view schematically showing the semiconductor module according to the first embodiment of the present disclosure. FIG. 3 is a circuit diagram showing the semiconductor module according to the first embodiment of the present disclosure. FIG. 4 is a circuit diagram showing a communication device according to the first embodiment of the present disclosure. FIG. 5 is a plan view showing a first modified example of the semiconductor module according to the first embodiment of the present disclosure. FIG. 6 is a cross-sectional view schematically showing a second modified example of the semiconductor module according to the first embodiment of the present disclosure. FIG. 7 is a plan view showing a semiconductor module according to a second embodiment of the present disclosure. FIG. 8 is a cross-sectional view schematically showing the semiconductor module according to the second embodiment of the present disclosure. FIG. 9 is a circuit diagram showing the semiconductor module according to the second embodiment of the present disclosure. FIG. 10 is a plan view showing a semiconductor module according to a third embodiment of the present disclosure. FIG. 11 is a cross-sectional view schematically showing the semiconductor module according to the third embodiment of the present disclosure. FIG. 12 is a circuit diagram showing the semiconductor module according to the third embodiment of the present disclosure.

[0010] DETAILED DESCRIPTION Preferred embodiments of the present disclosure will now be described in detail with reference to the drawings.

[0011] The terms "first," "second," "third," etc. in this disclosure are used for identification purposes only and are not intended to impose any ranking on their objects.

[0012] In this disclosure, unless otherwise specified, "a certain object A is formed on a certain object B" and "a certain object A is formed on a certain object B" include "a certain object A is formed directly on a certain object B" and "a certain object A is formed on a certain object B with another object interposed between the certain object A and the certain object B." Similarly, "a certain object A is disposed on a certain object B" and "a certain object A is disposed on a certain object B" include "a certain object A is disposed directly on a certain object B" and "a certain object A is disposed on a certain object B with another object interposed between the certain object A and the certain object B" unless otherwise specified. Similarly, "a certain object A is located on a certain object B" includes "a certain object A is located on a certain object B with a certain object A in contact with the certain object B" and "a certain object A is located on a certain object B with another object interposed between the certain object A and the certain object B." Furthermore, unless otherwise specified, the phrase "an object A overlaps an object B when viewed in a certain direction" includes "an object A overlaps the entire object B" and "an object A overlaps a part of an object B." Furthermore, in the present disclosure, "a surface A faces in (one side or the other side of) direction B" is not limited to the case where the angle of surface A with respect to direction B is 90°, but also includes the case where surface A is tilted with respect to direction B.

[0013] 1 to 3 show a semiconductor module according to a first embodiment of the present disclosure. The semiconductor module A1 of this embodiment includes a first semiconductor element 1A, a second semiconductor element 1B, a first connecting member 31, and a second connecting member 32. The semiconductor module A1 may also include a first conductive member 2A, a second conductive member 2B, and a sealing resin 5.

[0014] The specific functions and applications of the semiconductor module A1 are not limited in any way. The semiconductor module A1 may be used for applications such as voltage suppression of bidirectional current. Specific examples of applications of the semiconductor module A1 include a protection element connected to a communication line in a communication device, and the semiconductor module A1 may be connected to an Ethernet-standard communication line in an on-board electronic control unit known as an on-board ECU (Electronic Control Unit).

[0015] Fig. 1 is a plan view showing the semiconductor module A1, Fig. 2 is a cross-sectional view showing the semiconductor module A1, and Fig. 3 is a circuit diagram showing the semiconductor module A1.

[0016] The first semiconductor element 1A has a first semiconductor portion 11A, a second semiconductor portion 12A, and a third semiconductor portion 13A, a first electrode 14A, and second electrodes 15A and 16A. The specific configuration of the first semiconductor element 1A is not limited in any way. The first semiconductor element 1A may be a bipolar transistor, a metal-oxide-semiconductor field-effect transistor (MOSFET), an insulated gate bipolar transistor (IGBT), a thyristor, or the like. In this example, a case will be described in which the first semiconductor element 1A is a bipolar transistor.

[0017] The third semiconductor portion 13A is electrically interposed between the first semiconductor portion 11A and the second semiconductor portion 12A. In this example, the first semiconductor portion 11A and the second semiconductor portion 12A may include an n-type semiconductor, and the third semiconductor portion 13A may include a p-type semiconductor. The first semiconductor portion 11A, the second semiconductor portion 12A, and the third semiconductor portion 13A may include, for example, Si (silicon).

[0018] The first electrode 14A is electrically connected to the first semiconductor portion 11A. The second electrode 15A is electrically connected to the second semiconductor portion 12A. The third electrode 16A is electrically connected to the third semiconductor portion 13A. In this example, the first electrode 14A may be an emitter electrode, the second electrode 15A may be a collector electrode, and the third electrode 16A may be a base electrode.

[0019] A first diode 17A including a first semiconductor portion 11A and a third semiconductor portion 13A is formed between the first electrode 14A and the third electrode 16A. A second diode 18A including a second semiconductor portion 12A and a third semiconductor portion 13A is formed between the second electrode 15A and the third electrode 16A. As shown in FIG. 3 , the forward directions of the first diode 17A and the second diode 18A are opposite to each other. In this example, the withstand voltage of the second diode 18A may be higher than the withstand voltage of the first diode 17A.

[0020] The second semiconductor element 1B has a fourth semiconductor portion 11B, a fifth semiconductor portion 12B, and a sixth semiconductor portion 13B, and a fourth electrode 14B, a fifth electrode 15B, and a sixth electrode 16B. The specific configuration of the second semiconductor element 1B is not limited in any way. The second semiconductor element 1B may be a bipolar transistor, a metal-oxide-semiconductor field-effect transistor (MOSFET), an insulated gate bipolar transistor (IGBT), a thyristor, or the like. In this example, a case where the second semiconductor element 1B is a bipolar transistor will be described.

[0021] The sixth semiconductor portion 13B is electrically interposed between the fourth semiconductor portion 11B and the fifth semiconductor portion 12B. In this example, the fourth semiconductor portion 11B and the fifth semiconductor portion 12B may include an n-type semiconductor, and the sixth semiconductor portion 13B may include a p-type semiconductor. The fourth semiconductor portion 11B, the fifth semiconductor portion 12B, and the sixth semiconductor portion 13B may include, for example, Si (silicon).

[0022] The fourth electrode 14B is electrically connected to the fourth semiconductor portion 11B. The fifth electrode 15B is electrically connected to the fifth semiconductor portion 12B. The sixth electrode 16B is electrically connected to the sixth semiconductor portion 13B. In this example, the fourth electrode 14B may be an emitter electrode, the fifth electrode 15B may be a collector electrode, and the sixth electrode 16B may be a base electrode.

[0023] A third diode 17B including a fourth semiconductor portion 11B and a sixth semiconductor portion 13B is formed between the fourth electrode 14B and the sixth electrode 16B. A fourth diode 18B including a fifth semiconductor portion 12B and a sixth semiconductor portion 13B is formed between the fifth electrode 15B and the sixth electrode 16B. As shown in FIG. 3 , the forward directions of the third diode 17B and the fourth diode 18B are opposite to each other. In this example, the withstand voltage of the fourth diode 18B may be higher than the withstand voltage of the third diode 17B.

[0024] The first conductive member 2A forms a conductive path between the first semiconductor element 1A and the outside, and in this example, may support the first semiconductor element 1A. The first conductive member 2A may contain, for example, a metal such as Cu (copper), Ni (nickel), or Fe (iron), or an alloy thereof. In this example, the first conductive member 2A is configured as a so-called lead.

[0025] The first conductive member 2A may have a first main surface 21A and a first back surface 22A. The first main surface 21A and the first back surface 22A face opposite each other in the z direction. The first semiconductor element 1A is mounted on the first conductive member 2A. Specifically, the second electrode 15A may be conductively joined to the first main surface 21A via a conductive bonding material 19. The conductive bonding material 19 may be, for example, solder, Ag (silver) paste, or the like. The first back surface 22A is exposed from the sealing resin 5 and may be used as a mounting surface when mounting the semiconductor module A1 in an electronic device (not shown) or the like.

[0026] The second conductive member 2B forms a conductive path between the second semiconductor element 1B and the outside, and in this example, may support the second semiconductor element 1B. The first conductive member 2A may contain a metal such as Cu (copper), Ni (nickel), or Fe (iron), or an alloy thereof. In this example, the first conductive member 2A is configured as a so-called lead. In this example, the second conductive member 2B is spaced apart from the first conductive member 2A in the x-direction.

[0027] The second conductive member 2B may have a second main surface 21B and a second back surface 22B. The second main surface 21B and the second back surface 22B face opposite each other in the z direction. A second semiconductor element 1B is mounted on the second conductive member 2B. Specifically, the fifth electrode 15B may be conductively joined to the second main surface 21B via a conductive bonding material 19. The second back surface 22B is exposed from the sealing resin 5 and may be used as a mounting surface when mounting the semiconductor module A1 in an electronic device (not shown) or the like.

[0028] There are no particular limitations on the specific configuration of the first conductive member 2A and the second conductive member 2B. The first conductive member 2A and the second conductive member 2B may be configured by leads or may be wiring portions that are conductive parts of a wiring board.

[0029] The first connection member 31 connects the first electrode 14A and the sixth electrode 16B. The specific configuration of the first connection member 31 is not limited in any way. The first connection member 31 may be a wire, ribbon, plate-like member, etc. containing a metal or alloy, or may be a wiring portion of a wiring board, etc. In this example, the first connection member 31 is a wire.

[0030] The second connection member 32 connects the fourth electrode 14B and the third electrode 16A. The specific configuration of the second connection member 32 is not limited in any way. The second connection member 32 may be a wire, ribbon, plate-like member, etc. containing a metal or alloy, or may be a wiring portion of a wiring board, etc. In this example, the second connection member 32 is a wire.

[0031] 2, for the sake of convenience in understanding the connection mode of the first connection member 31 and the second connection member 32 in the semiconductor module A1, the first connection member 31 and the second connection member 32, which do not appear in the same cross section, are shown schematically in the same cross section. The actual positional relationship between the first connection member 31 and the second connection member 32 may be, for example, as shown in FIG. 1, such that they are spaced apart from each other in the y direction and each extends substantially along the x direction.

[0032] The sealing resin 5 covers the first semiconductor element 1A, the second semiconductor element 1B, the first connecting member 31, the second connecting member 32, and a portion of each of the first conductive member 2A and the second conductive member 2B. The sealing resin 5 contains an insulating material, and may contain, for example, an epoxy resin. The first back surface 22A and the second back surface 22B may be exposed from the sealing resin 5 in the z direction.

[0033] 4 shows a communication device according to a first embodiment of the present invention. The communication device B1 includes a communication line 74 and a semiconductor module A1 connected to the communication line 74.

[0034] The specific configuration of the communication device B1 is not limited in any way. The communication device B1 is not limited to a device having communication as its main function, and may be a device that performs communication between components within the device, or between components within the device and components outside the device. In this example, the communication device B1 may include a communication control unit 72 and a connector 73. Furthermore, the communication device B1 may include a main control unit 71, and may be configured as, for example, an in-vehicle electronic control unit.

[0035] The main control unit 71 performs the main control processing function of the communication device B1 and may be, for example, a CPU. The communication control unit 72 controls communication via the communication line 74 and may have, for example, a CPU and various interfaces. The communication control unit 72 may have, for example, a communication circuit that performs communication control in accordance with the Ethernet standard, and performs communication in accordance with the 1000BASE-T1 standard, for example.

[0036] The connector 73 is a part used for communication with other parts of the vehicle in which the communication device B1 is mounted and for power supply, for example, and is connected to a cable connector (not shown).

[0037] The communication line 74 connects the communication control unit 72 and the connector 73. The specific configuration of the communication line 74 is not limited in any way and may include, for example, a high-side line and a low-side line. In this example, for example, the first conductive member 2A (first back surface 22A) may be connected to one of the high-side line and the low-side line, and the second conductive member 2B (second back surface 22B) may be connected to the other.

[0038] Next, the operation of the semiconductor module A1 and the communication device B1 will be described.

[0039] According to this embodiment, when the semiconductor module A1 is connected to a communication line 74 or the like, if a high voltage is applied to the first conductive member 2A due to an electrical discharge (ESD) or the like, causing the first conductive member 2A to be at a high potential, a conduction path is formed through the first conductive member 2A, the second diode 18A, the first diode 17A, and the fourth diode 18B to the second conductive member 2B. On the other hand, if a high voltage is applied to the second conductive member 2B, causing the second conductive member 2B to be at a high potential, a conduction path is formed through the second conductive member 2B, the fourth diode 18B, the third diode 17B, and the second diode 18A to the second conductive member 2B. As a result, almost no reverse voltage is applied to the first diode 17A and the third diode 17B. This increases the withstand voltage, i.e., the ESD tolerance, of the semiconductor module A1.

[0040] Furthermore, the capacitance of the semiconductor module A1 is approximately equivalent to the sum of the capacitances of the first diode 17A and the third diode 17B, and the capacitances of the second diode 18A and the fourth diode 18B are almost cancelled out. This makes it possible to suppress the capacitance while increasing the ESD tolerance of the semiconductor module A1.

[0041] The withstand voltage of the second diode 18A being higher than the withstand voltage of the first diode 17A and the withstand voltage of the fourth diode 18B being higher than the withstand voltage of the third diode 17B is preferable for increasing the ESD resistance of the semiconductor module A1.

[0042] 5 to 12 show other embodiments of the present disclosure. In these figures, elements that are the same as or similar to those in the above embodiment are given the same reference numerals. Furthermore, the configurations of the various parts in each of the modified examples and embodiments can be combined with each other as appropriate within the scope of not causing technical contradictions.

[0043] 5 shows a first modified example of the semiconductor module A1. In the semiconductor module A11 of this modified example, the first connection member 31 and the second connection member 32 are formed of plate-like members made of a metal, an alloy, or the like. The first connection member 31 and the second connection member 32 may be joined to the first electrode 14A, the fourth electrode 14B, the third electrode 16A, and the sixth electrode 16B using, for example, solder.

[0044] According to this modification, it is possible to increase the withstand voltage, i.e., the ESD resistance, of the semiconductor module A11. As can be understood from this modification, the specific configurations of the first connecting member 31 and the second connecting member 32 are not limited in any way.

[0045] 6 is a cross-sectional view schematically illustrating a second modification of the semiconductor module A1. In the semiconductor module A12 of this modification, the first conductive member 2A and the second conductive member 2B are configured by wiring portions of the wiring substrate 2.

[0046] The insulating layer 20 is made of an insulating material such as glass epoxy resin. The wiring portion of the wiring board 2 includes portions located on both sides of the insulating layer 20 and portions that penetrate the insulating layer 20. The first main surface 21A and the second main surface 21B are the surfaces of portions of the wiring portion located on one side of the insulating layer 20 (the upper side in the figure). The first back surface 22A and the second back surface 22B are the surfaces of portions of the wiring portion located on the other side of the insulating layer 20 (the lower side in the figure).

[0047] This modification can increase the withstand voltage, i.e., the ESD resistance, of the semiconductor module A 12. As can be understood from this modification, the specific configurations of the first conductive member 2A and the second conductive member 2B are not limited in any way.

[0048] 7 to 9 show a semiconductor module according to a second embodiment of the present disclosure. The semiconductor module A2 of this embodiment further includes a third semiconductor element 1C, a third conductive member 2C, a third connecting member 33, and a fourth connecting member 34. For ease of understanding, FIG. 8 is a cross-sectional view schematically showing the semiconductor module A2. For ease of understanding, FIG. 9 shows the third electrode 16A in two separate locations.

[0049] The third semiconductor element 1C has a seventh semiconductor portion 11C, an eighth semiconductor portion 12C, a ninth semiconductor portion 13C, a seventh electrode 14C, an eighth electrode 15C, and a ninth electrode 16C. The specific configuration of the third semiconductor element 1C is not limited in any way. The third semiconductor element 1C may be a bipolar transistor, a metal-oxide-semiconductor field-effect transistor (MOSFET), an insulated gate bipolar transistor (IGBT), a thyristor, or the like. In this example, a case where the third semiconductor element 1C is a bipolar transistor will be described.

[0050] A ninth semiconductor portion 13C is electrically interposed between the seventh semiconductor portion 11C and the eighth semiconductor portion 12C. In this example, the seventh semiconductor portion 11C and the eighth semiconductor portion 12C may include an n-type semiconductor, and the ninth semiconductor portion 13C may include a p-type semiconductor. The seventh semiconductor portion 11C, the eighth semiconductor portion 12C, and the ninth semiconductor portion 13C may include, for example, Si (silicon).

[0051] The seventh electrode 14C is electrically connected to the seventh semiconductor portion 11C. The eighth electrode 15C is electrically connected to the eighth semiconductor portion 12C. The ninth electrode 16C is electrically connected to the ninth semiconductor portion 13C. In this example, the seventh electrode 14C may be an emitter electrode, the eighth electrode 15C may be a collector electrode, and the ninth electrode 16C may be a base electrode.

[0052] A fifth diode 17C including a seventh semiconductor portion 11C and a ninth semiconductor portion 13C is formed between the seventh electrode 14C and the ninth electrode 16C. A sixth diode 18C including an eighth semiconductor portion 12C and a ninth semiconductor portion 13C is formed between the eighth electrode 15C and the ninth electrode 16C. As shown in FIG. 3 , the forward directions of the fifth diode 17C and the sixth diode 18C are opposite to each other. In this example, the withstand voltage of the sixth diode 18C may be higher than the withstand voltage of the fifth diode 17C.

[0053] The third conductive member 2C forms a conductive path between the third semiconductor element 1C and the outside, and in this example, may support the third semiconductor element 1C. The third conductive member 2C may contain, for example, a metal such as Cu (copper), Ni (nickel), or Fe (iron), or an alloy thereof. In this example, the third conductive member 2C is configured as a so-called lead.

[0054] The third conductive member 2C may have a third main surface 21C and a third back surface 22C. The third main surface 21C and the third back surface 22C face opposite each other in the z direction. A third semiconductor element 1C is mounted on the third conductive member 2C. Specifically, the eighth electrode 15C may be conductively joined to the third main surface 21C via a conductive bonding material 19. The third back surface 22C is exposed from the sealing resin 5 and may be used as a mounting surface when mounting the semiconductor module A2 in an electronic device (not shown) or the like.

[0055] The third connection member 33 connects the first electrode 14A and the ninth electrode 16C. The specific configuration of the third connection member 33 is not limited in any way. The third connection member 33 may be a wire, ribbon, plate-like member, etc. containing a metal or alloy, or may be a wiring portion of a wiring board, etc. In this example, the third connection member 33 is a wire.

[0056] The fourth connection member 34 connects the seventh electrode 14C and the third electrode 16A. The specific configuration of the fourth connection member 34 is not limited in any way. The fourth connection member 34 may be a wire, ribbon, plate-like member, etc. containing a metal or alloy, or may be a wiring portion of a wiring board, etc. In this example, the fourth connection member 34 is a wire.

[0057] According to this embodiment, the withstand voltage, i.e., ESD resistance, of the semiconductor module A2 can be increased. According to this embodiment, two paths can be set: one between the first main surface 21A and the second main surface 21B, and the other between the first main surface 21A and the third main surface 21C. Therefore, the semiconductor module A2 can be connected to a communication line 74 that is configured with even more lines than the communication line 74 in the communication device B1 shown in FIG. 4, for example. As can be understood from this embodiment, the number of semiconductor elements in the present disclosure is not limited in any way, and other semiconductor elements may be included in addition to the first semiconductor element 1A to the third semiconductor element 1C.

[0058] 10 to 12 show a semiconductor module according to a third embodiment of the present disclosure. Similar to the semiconductor module A2, the semiconductor module A3 of this embodiment further includes a third semiconductor element 1C, a third conductive member 2C, a third connecting member 33, and a fourth connecting member 34. For ease of understanding, FIG. 11 is a cross-sectional view schematically showing the semiconductor module A3.

[0059] In this embodiment, the first semiconductor element 1A has two first semiconductor portions 11A and two first electrodes 14A. The two first electrodes 14A are individually connected to the two first semiconductor portions 11A.

[0060] In this embodiment, the second semiconductor element 1B has two fourth semiconductor portions 11B and two fourth electrodes 14B. The two fourth electrodes 14B are individually connected to the two fourth semiconductor portions 11B.

[0061] In this embodiment, the third semiconductor element 1C has two seventh semiconductor portions 11C and two seventh electrodes 14C. The two seventh electrodes 14C are individually connected to the two seventh semiconductor portions 11C.

[0062] The first connection member 31 is connected between the first electrode 14A and the sixth electrode 16B, and the third connection member 33 is connected between the other first electrode 14A and the ninth electrode 16C.

[0063] The second connecting member 32 is connected to the third electrode 16A and one of the fourth electrodes 14B. No connecting member or the like may be connected to the other fourth electrode 14B. The fourth connecting member 34 is connected to the third electrode 16A and one of the seventh electrodes 14C. No connecting member or the like may be connected to the other seventh electrode 14C.

[0064] 12 , in this embodiment, the first semiconductor element 1A has two first diodes 17A. The second semiconductor element 1B has two third diodes 17B. The third semiconductor element 1C has two fifth diodes 17C. One third diode 17B and one fifth diode 17C do not need to be included in the conduction path in the circuit diagram shown in FIG.

[0065] According to this embodiment, the withstand voltage, i.e., ESD resistance, of the semiconductor module A3 can be increased. This embodiment also allows connection to a communication line 74 that is configured with even more lines than the communication line 74 in the communication device B1 shown in FIG. 4 . As can be understood from this embodiment, in a configuration including a first semiconductor element 1A, a second semiconductor element 1B, and a third semiconductor element 1C, the specific configurations of the semiconductor layers and electrodes in each semiconductor element are not limited in any way.

[0066] The semiconductor module and communication device according to the present disclosure are not limited to the above-described embodiments. The specific configurations of the components of the semiconductor module and communication device according to the present disclosure can be freely modified in various ways. The present disclosure includes the embodiments described in the following appendices.

[0067] Supplementary Note 1. A first semiconductor element (1A) having a first semiconductor portion (11A), a second semiconductor portion (12A), and a third semiconductor portion (13A), a first electrode (14A) conductive to the first semiconductor portion (11A), a second electrode (15A) conductive to the second semiconductor portion (12A), and a third electrode (16A) conductive to the third semiconductor portion (13A), and a second semiconductor element (1B) having a fourth semiconductor portion (11B), a fifth semiconductor portion (12B), and a sixth semiconductor portion (13B), a fourth electrode (14B) conductive to the fourth semiconductor portion (11B), a fifth electrode (15B) conductive to the fifth semiconductor portion (12B), and a sixth electrode (16B) conductive to the sixth semiconductor portion (13B), wherein in the first semiconductor element (1A), The third semiconductor portion (13A) is electrically interposed between the first semiconductor portion (11A) and the second semiconductor portion (12A); a first diode (17A) including the first semiconductor portion (11A) and the third semiconductor portion (13A) is formed between the first electrode (14A) and the third electrode (16A); a second diode (18A) including the second semiconductor portion (12A) and the third semiconductor portion (13A) is formed between the second electrode (15A) and the third electrode (16A); and in the second semiconductor element (1B), the sixth semiconductor portion (13B) is electrically interposed between the fourth semiconductor portion (11B) and the fifth semiconductor portion (12B); and a third diode (17B) including the fourth semiconductor portion (11B) and the sixth semiconductor portion (13B) is formed between the fourth electrode (14B) and the sixth electrode (16B); A semiconductor module (A1) comprising: a fourth diode (18B) including the fifth semiconductor portion (12B) and the sixth semiconductor portion (13B) formed between the fifth electrode (15B) and the sixth electrode (16B); a first connection member (31) connecting the first electrode (14A) and the sixth electrode (16B); and a second connection member (32) connecting the fourth electrode (14B) and the third electrode (16A). Appendix 1-1. The semiconductor module (A1) according to Appendix 1, wherein the first connection member (31) and the second connection member (32) are wires.Supplementary Note 1-2. The semiconductor module (A11) according to Supplementary Note 1, wherein the first connecting member (31) and the second connecting member (32) are metal plate members. Supplementary Note 2. The semiconductor module (A1) according to Supplementary Note 1, wherein the first semiconductor element (1A) is a bipolar transistor, the first electrode (14A) is an emitter electrode, the second electrode (15A) is a collector electrode, and the third electrode (16A) is a base electrode. Supplementary Note 3. The semiconductor module (A1) according to Supplementary Note 2, wherein the first semiconductor portion (11A) and the second semiconductor portion (12A) include an n-type semiconductor, and the third semiconductor portion (13A) includes a p-type semiconductor. Supplementary Note 4. The semiconductor module (A1) according to any one of Supplements 1 to 3, wherein the withstand voltage of the second diode (18A) is higher than the withstand voltage of the first diode (17A). Supplementary Note 5. The semiconductor module (A1) according to any one of Supplements 1 to 4, wherein the second semiconductor element (1B) is a bipolar transistor, the fourth electrode (14B) is an emitter electrode, the fifth electrode (15B) is a collector electrode, and the sixth electrode (16B) is a base electrode. Supplementary Note 6. The semiconductor module (A1) according to Supplementary Note 5, wherein the fourth semiconductor portion (11B) and the fifth semiconductor portion (12B) include an n-type semiconductor, and the sixth semiconductor portion (13B) includes a p-type semiconductor. Supplementary Note 7. The semiconductor module (A1) according to any one of Supplements 1 to 6, wherein the withstand voltage of the fourth diode (18B) is higher than the withstand voltage of the third diode (17B). Supplementary Note 8. The semiconductor module (A1) according to any one of Supplements 1 to 7, comprising a first conductive member (2A) conductively connected to the second electrode (15A). Supplementary Note 8-1. The semiconductor module (A1) according to Supplementary Note 8, wherein the first conductive member (2A) is a lead. Supplementary Note 8-2. The semiconductor module (A12) according to Supplementary Note 8, wherein the first conductive member (2A) is a wiring portion included in a wiring substrate. Supplementary Note 9. The semiconductor module (A1) according to any one of Supplements 1 to 8, including a second conductive member (2B) conductively connected to the fifth electrode (15B). Supplementary Note 9-1. The semiconductor module (A1) according to Supplementary Note 9, wherein the second conductive member (2B) is a lead.Supplementary Note 9-2: The semiconductor module (A12) according to Supplementary Note 9, wherein the second conductive member (2B) is a wiring portion included in a wiring substrate. a third semiconductor element (1C) having a seventh semiconductor portion (11C), an eighth semiconductor portion (12C), and a ninth semiconductor portion (13C), a seventh electrode (14C) conducting to the seventh semiconductor portion (11C), an eighth electrode (15C) conducting to the eighth semiconductor portion (12C), and a ninth electrode (16C) conducting to the ninth semiconductor portion (13C), wherein in the third semiconductor element (1C), the ninth semiconductor portion (13C) is electrically interposed between the seventh semiconductor portion (11C) and the eighth semiconductor portion (12C), and a fifth diode (17C) including the seventh semiconductor portion (11C) and the ninth semiconductor portion (13C) is formed between the seventh electrode (14C) and the ninth electrode (16C), The semiconductor module (A2) according to any one of Supplementary Notes 1 to 9, further comprising: a sixth diode (18C) including the eighth semiconductor portion (12C) and the ninth semiconductor portion (13C) formed between the eighth electrode (15C) and the ninth electrode (16C); a third connection member (33) connecting the first electrode (14A) and the ninth electrode (16C); and a fourth connection member (34) connecting the seventh electrode (14C) and the third electrode (16A). Supplementary Note 11. The semiconductor module (A2) according to Supplementary Note 10, further comprising: a third semiconductor element (1C) that is a bipolar transistor; the seventh electrode (14C) is an emitter electrode; the eighth electrode (15C) is a collector electrode; and the ninth electrode (16C) is a base electrode. Supplementary Note 12. The semiconductor module (A2) according to Supplementary Note 11, wherein the seventh semiconductor portion (11C) and the eighth semiconductor portion (12C) include an n-type semiconductor, and the ninth semiconductor portion (13C) includes a p-type semiconductor.Supplementary Note 13: The semiconductor module (A2) according to any one of Supplements 10 to 12, wherein the withstand voltage of the sixth diode (18C) is higher than the withstand voltage of the fifth diode (17C).Supplementary Note 14: The semiconductor module (A2) according to any one of Supplements 10 to 13, further comprising a third conductive member (2C) conductively connected to the eighth electrode (15C).Supplementary Note 15. A communication device (B1) comprising: a communication line (74) for signal communication; and a semiconductor module (A1) according to any one of Supplements 1 to 14 connected to the communication line (74). Supplementary Note 15-1. The communication device (B1) according to Supplementary Note 15, comprising a communication control unit (72) and a connector (73) connected by the communication line (74). Supplementary Note 15-2. The communication device (B1) according to Supplementary Note 15-1, further comprising a main control unit (71), and configured as an in-vehicle electronic control unit.

[0068] A1, A11, A12, A2, A3: Semiconductor module B1: Communication device 1A: First semiconductor element 1B: Second semiconductor element 1C: Third semiconductor element 2: Wiring substrate 2A: First conductive member 2B: Second conductive member 2C: Third conductive member 5: Sealing resin 11A: First semiconductor portion 11B: Fourth semiconductor portion 11C: Seventh semiconductor portion 12A: Second semiconductor portion 12B: Fifth semiconductor portion 12C: Eighth semiconductor portion 13A: Third semiconductor portion 13B: Sixth semiconductor portion 13C: Ninth semiconductor portion 14A: First electrode 14B: Fourth electrode 14C: Seventh electrode 15A: Second electrode 15B: Fifth electrode 15C: Eighth electrode 16A: Third electrode 16B: Sixth electrode 16C: Ninth electrode 17A: First diode 17B: Third diode 17C: Fifth diode 18A: Second diode 18B: Fourth diode 18C: Sixth diode 19: Conductive bonding material 20: Insulating layer 21A: First main surface 21B: Second main surface 21C: Third main surface 22A: First back surface 22B: Second back surface 22C: Third back surface 31: First connecting member 32: Second connecting member 33: Third connecting member 34: Fourth connecting member 71: Main control unit 72: Communication control unit 73: Connector 74: Communication line

Claims

1. A first semiconductor element having a first semiconductor portion, a second semiconductor portion, and a third semiconductor portion, a first electrode electrically connected to the first semiconductor portion, a second electrode electrically connected to the second semiconductor portion, and a third electrode electrically connected to the third semiconductor portion; and a second semiconductor element having a fourth semiconductor portion, a fifth semiconductor portion, and a sixth semiconductor portion, a fourth electrode electrically connected to the fourth semiconductor portion, a fifth electrode electrically connected to the fifth semiconductor portion, and a sixth electrode electrically connected to the sixth semiconductor portion, wherein in the first semiconductor element, the third semiconductor portion is electrically interposed between the first semiconductor portion and the second semiconductor portion, a first diode including the first semiconductor portion and the third semiconductor portion is formed between the first electrode and the third electrode, and a second diode including the second semiconductor portion and the third semiconductor portion is formed between the second electrode and the third electrode, and wherein in the second semiconductor element, the sixth semiconductor portion is electrically interposed between the fourth semiconductor portion and the fifth semiconductor portion, a third diode including the fourth semiconductor portion and the sixth semiconductor portion is formed between the fourth electrode and the sixth electrode; a fourth diode including the fifth semiconductor portion and the sixth semiconductor portion is formed between the fifth electrode and the sixth electrode; a first connection member connecting the first electrode and the sixth electrode; and a second connection member connecting the fourth electrode and the third electrode.

2. The semiconductor module according to claim 1, wherein the first semiconductor element is a bipolar transistor, the first electrode is an emitter electrode, the second electrode is a collector electrode, and the third electrode is a base electrode.

3. The semiconductor module according to claim 2, wherein the first semiconductor portion and the second semiconductor portion include n-type semiconductors, and the third semiconductor portion includes a p-type semiconductor.

4. The semiconductor module according to claim 1, wherein the withstand voltage of said second diode is higher than the withstand voltage of said first diode.

5. A semiconductor module according to any one of claims 1 to 4, wherein the second semiconductor element is a bipolar transistor, the fourth electrode is an emitter electrode, the fifth electrode is a collector electrode, and the sixth electrode is a base electrode.

6. The semiconductor module according to claim 5, wherein the fourth semiconductor portion and the fifth semiconductor portion include an n-type semiconductor, and the sixth semiconductor portion includes a p-type semiconductor.

7. The semiconductor module according to claim 1, wherein the withstand voltage of said fourth diode is higher than the withstand voltage of said third diode.

8. A semiconductor module according to any one of claims 1 to 7, further comprising a first conductive member electrically connected to said second electrode.

9. The semiconductor module according to any one of claims 1 to 8, further comprising a second conductive member electrically connected to said fifth electrode.

10. A semiconductor module according to any one of claims 1 to 9, comprising: a third semiconductor element having a seventh semiconductor portion, an eighth semiconductor portion, and a ninth semiconductor portion; a seventh electrode electrically connected to the seventh semiconductor portion, an eighth electrode electrically connected to the eighth semiconductor portion, and a ninth electrode electrically connected to the ninth semiconductor portion; wherein in the third semiconductor element, the ninth semiconductor portion is electrically interposed between the seventh semiconductor portion and the eighth semiconductor portion; a fifth diode including the seventh semiconductor portion and the ninth semiconductor portion is formed between the seventh electrode and the ninth electrode; and a sixth diode including the eighth semiconductor portion and the ninth semiconductor portion is formed between the eighth electrode and the ninth electrode; a third connection member connecting the first electrode and the ninth electrode; and a fourth connection member connecting the seventh electrode and the third electrode.

11. The semiconductor module according to claim 10, wherein the third semiconductor element is a bipolar transistor, the seventh electrode is an emitter electrode, the eighth electrode is a collector electrode, and the ninth electrode is a base electrode.

12. The semiconductor module according to claim 11, wherein the seventh semiconductor portion and the eighth semiconductor portion include an n-type semiconductor, and the ninth semiconductor portion includes a p-type semiconductor.

13. The semiconductor module according to claim 10, wherein the withstand voltage of the sixth diode is higher than the withstand voltage of the fifth diode.

14. The semiconductor module according to any one of claims 10 to 13, further comprising a third conductive member electrically connected to the eighth electrode.

15. A communication device comprising: a communication line for signal communication; and a semiconductor module according to any one of claims 1 to 14 connected to said communication line.

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