Radio frequency front-end module and communication device

Abstract

The present application discloses a radio frequency front-end module and a communication device. The radio frequency front-end module comprises a power amplification circuit, a bias circuit for providing a bias signal for the power amplification circuit, and a protection circuit connected to the bias circuit. The protection circuit is configured such that a clamping value on an output branch of the protection circuit connected to the bias circuit has a first correlation with temperature in a first temperature interval, and has a second correlation with temperature in a third temperature interval, wherein the first correlation and the second correlation have different correlations with temperature, and the minimum value of the third temperature interval is greater than the maximum value of the first temperature interval. The radio frequency front-end module provided in the present application can perform appropriate compensation and clamping on the bias circuit on the basis of different ambient temperatures, thereby effectively improving the working stability of the radio frequency front-end module.

Description

Radio frequency front-end module and communication device

[0001] The present application is based on two Chinese applications with the application number 202410862008.2 and the title "Radio frequency front-end module and communication device" filed on June 28, 2024, and the application number 202410862009.7 and the title "Temperature compensation circuit and power amplifier" filed on June 28, 2024, and claims priority thereto. TECHNICAL FIELD

[0002] The present application relates to the field of communication technology, in particular to a radio frequency front-end module and a communication device. BACKGROUND

[0003] With the maturity and popularity of wireless transmission technology, there are now quite a number of communication devices, such as mobile phones, notebook computers or wireless network cards, which are usually equipped with a radio frequency front-end module to perform wireless signal transmission.

[0004] With the diversification of application environment, the requirements of communication devices on the radio frequency front-end module are getting higher and higher. For example, in harsh environment scenarios such as high temperature or low temperature, the safe working area of the power device in the radio frequency front-end module will be narrowed, and even when the working current on the power device exceeds the maximum bearing current of the device, irreversible damage or destruction will be caused to the power device.

[0005] SUMMARY

[0006] Therefore, the embodiments of the present application provide a radio frequency front-end module and a communication device, which are aimed at protecting the circuits or devices in the radio frequency front-end module under different environmental temperatures, so as to effectively improve the stability and reliability of the radio frequency front-end module and avoid damage to the circuits or devices in the radio frequency front-end module.

[0007] In a first aspect, the embodiments of the present application provide a radio frequency front-end module, comprising:

[0008] a power amplification circuit, a bias circuit configured to provide a bias signal for the power amplification circuit, and a protection circuit connected with the bias circuit;

[0009] The protection circuit is configured to make the clamping value on the output branch of the protection circuit connected with the bias circuit present a first correlation with temperature within a first temperature interval and a second correlation with temperature within a third temperature interval, the first correlation and the second correlation have different correlations with temperature, and the minimum value of the third temperature interval is greater than the maximum value of the first temperature interval.

[0010] In a second aspect, the embodiments of the present application provide a radio frequency front-end module, comprising:

[0011] The power amplification circuit and a bias circuit configured to provide a bias signal for the power amplification circuit;

[0012] The maximum value of the bias signal output by the bias circuit and the temperature in the first temperature interval present a fifth correlation, the maximum value of the bias signal output by the bias circuit and the temperature in the third temperature interval present a sixth correlation, the fifth correlation and the sixth correlation are different, and the minimum value of the third temperature interval is greater than the maximum value of the first temperature interval.

[0013] In a third aspect, an embodiment of the present application provides a radio frequency front-end module, comprising: a power amplification circuit and a bias circuit configured to provide a bias signal for the power amplification circuit;

[0014] The second end of the bias circuit is configured to be connected with a protection circuit, and the protection circuit is configured to make the clamping value on the output branch of the protection circuit and the bias circuit present a first relationship with the temperature in a target temperature interval;

[0015] The first end of the bias circuit is configured to be connected with a bias control circuit, and the bias control circuit is configured to make the bias source signal on the output branch of the bias circuit and the bias control circuit present a second relationship with the temperature in the target temperature interval; and the first relationship and the second relationship are different.

[0016] The third end of the bias circuit is configured to be connected with the power amplification circuit and output a bias signal to the power amplification circuit.

[0017] In a fourth aspect, an embodiment of the present application provides a radio frequency front-end module, comprising: a power amplification circuit and a bias circuit configured to provide a bias signal for the power amplification circuit;

[0018] The power amplification circuit and a bias circuit configured to provide a bias signal for the power amplification circuit;

[0019] The bias circuit is connected with a protection circuit, and the protection circuit is configured to make the clamping value on the output branch of the protection circuit and the bias circuit present a positive correlation with the temperature in a first temperature interval, wherein the maximum value of the first temperature interval is less than a first temperature threshold.

[0020] And / or, the protection circuit is configured to make the clamping value on the output branch of the bias circuit and the protection circuit present a negative correlation with the temperature in a third temperature interval, wherein the minimum value of the third temperature interval is greater than a second temperature threshold.

[0021] In a fourth aspect, the embodiments of the present application provide a radio frequency front-end module, comprising: a substrate, and a first chip and a second chip arranged on the substrate; the first chip comprises a power amplification circuit and a bias circuit for providing a bias signal for the power amplification circuit; the second chip comprises a protection circuit, and the protection circuit is connected with the bias circuit;

[0022] The protection circuit is configured to make the clamping value on the output branch connected with the protection circuit and the bias circuit have a first correlation with temperature in a first temperature interval.

[0023] The protection circuit is configured to make the clamping value on the output branch connected with the protection circuit and the bias circuit have a second correlation with temperature in a third temperature interval, and the minimum value of the third temperature interval is greater than the maximum value of the first temperature interval.

[0024] In a sixth aspect, the present application further provides a communication device, comprising the radio frequency front-end module and an antenna module connected with the radio frequency front-end module.

[0025] From the above embodiments, it can be seen that the clamping value on the output branch of the protection circuit in the radio frequency front-end module provided by the present application can change with the change of temperature in different first temperature intervals and / or third temperature intervals, so that the bias signal output by the bias circuit also changes with the change of the clamping value in the first temperature interval and the third temperature interval, so that the circuit or device in the radio frequency front-end module can always work in a safe working area in different working environments, and the circuit or device in the radio frequency front-end module is protected, so as to effectively avoid the performance degradation of the power amplifier caused by too high or too low temperature, and thus effectively improve the stability and reliability of the radio frequency front-end module.

[0026] It should be understood that the above general description and the following detailed description are only exemplary and explanatory, and cannot limit the present application. BRIEF DESCRIPTION OF DRAWINGS

[0027] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings needed in the embodiment description will be briefly introduced. Obviously, the drawings in the following description are some embodiments of the present application, and those skilled in the art can also obtain other drawings according to these drawings without creative labor.

[0028] FIG. 1 is a block structure schematic diagram of the radio frequency front-end module provided by the embodiments of the present application;

[0029] Figure 2 is a schematic diagram of the structure of a bias circuit, protection circuit and power amplifier circuit in a radio frequency front-end module provided in an embodiment of this application.

[0030] Figures 3A to 4B show the circuit structure diagrams illustrating the interaction between various variations of the power amplifier circuit and the bias circuit in the RF front-end module.

[0031] Figure 5 is a schematic diagram of a specific circuit structure of the temperature compensation circuit in the protection circuit of the radio frequency front-end module provided in the embodiment of this application;

[0032] Figure 6 is a schematic diagram showing the relationship between the compensation signal, clamping signal and temperature in the protection circuit of the RF front-end module provided in the embodiment of this application when the temperature compensation circuit shown in Figure 5 is used;

[0033] Figure 7 is a schematic diagram showing the correlation between the compensation signal, clamping signal and temperature, which correspond to the temperature compensation drift that may occur in some protection circuits under high temperature conditions.

[0034] Figure 8 is a schematic diagram of a specific circuit structure of the switch control module;

[0035] Figure 9 is a schematic diagram of a modified circuit structure of a temperature compensation circuit provided in one embodiment;

[0036] Figure 10 is a schematic diagram showing the relationship between the compensation signal output to the compensation node and the temperature in the modified circuit structure of Figure 9.

[0037] Figures 11 and 12 are schematic diagrams of the circuit structure of various modified embodiments of the temperature compensation circuit;

[0038] Figure 13 is a schematic diagram showing the relationship between the compensation signal, clamping signal and temperature in the protection circuit of the radio frequency front-end module provided in the embodiment of this application when the temperature compensation circuit shown in Figure 12 is used;

[0039] Figure 14 is a schematic diagram of a specific circuit structure of the clamping circuit in the protection circuit of the RF front-end module;

[0040] Figure 15 is a schematic diagram of another bias circuit structure in the radio frequency front-end module provided in the embodiment of this application, which is combined with the protection circuit and the power amplifier circuit.

[0041] Figure 16 is a schematic diagram showing the correlation between the bias source signal and temperature in the bias control circuit;

[0042] Figure 17 is a block diagram of a power amplifier provided in an embodiment of this application;

[0043] Figure 18 is a schematic diagram showing the relationship between the compensation signal provided by the temperature compensation circuit to the compensation node and the temperature in different temperature ranges.

[0044] FIG. 19 is a schematic diagram of a circuit structure of a temperature compensation circuit according to an embodiment of the present application;

[0045] FIG. 20 is a schematic diagram of the relationship between the current flowing through the plurality of transistors and the compensation signal and temperature in the temperature compensation circuit according to an embodiment of the present application;

[0046] FIG. 21 is a schematic diagram of the relationship between the current flowing through the plurality of transistors and the compensation signal and temperature in a variant of the temperature compensation circuit;

[0047] FIG. 22 is a schematic diagram of a specific circuit structure of a switch control module;

[0048] FIG. 23 is a schematic diagram of a variant of the circuit structure of the temperature compensation circuit according to an embodiment of the present application;

[0049] FIG. 24 is a schematic diagram of the variation of the compensation signal output to the compensation node in the variant of the circuit structure of FIG. 7;

[0050] FIG. 25 is a schematic diagram of the relationship between the compensation voltage and the compensation current of the compensation node;

[0051] FIG. 26 is a schematic diagram of a variant of the circuit structure of the temperature compensation circuit according to an embodiment of the present application;

[0052] FIG. 27 is a schematic diagram of a variant of the circuit structure of the temperature compensation circuit according to an embodiment of the present application;

[0053] FIG. 28 is a schematic diagram of the relationship between the current flowing through the plurality of transistors and the compensation signal and temperature in the temperature compensation circuit according to an embodiment of the present application;

[0054] FIG. 29 is a schematic diagram of the block structure of an electronic device according to an embodiment of the present application; DETAILED DESCRIPTION

[0055] The technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative work fall within the scope of the present application.

[0056] It should be noted that the terms "first", "second", etc. in the present application are only for the purpose of description, and cannot be understood as indicating or implying the relative importance of the indicated technical features or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first", "second" can explicitly or implicitly include at least one of the features. In addition, the technical solutions of various embodiments can be combined with each other, but it must be based on the realization of ordinary skilled in the art, when the combination of technical solutions appears contradictory or unachievable, it should be considered that the combination of technical solutions does not exist, nor within the scope of protection claimed in the present application.

[0057] In the description of the present application, it should be noted that, unless otherwise explicitly specified and limited, the terms "mounting", "connection", "connection" should be understood in a broad sense, for example, it can be fixed connection, or detachable connection, or integral connection. It can be mechanical connection, or electrical connection. It can be directly connected, or indirectly connected through intermediate medium, it can be the internal communication of two elements or the interaction relationship between two elements. For ordinary skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0058] The flowchart shown in the drawing is only an example, and it is not necessary to include all the contents and operations / steps, and it is not necessary to execute in the order described. For example, some operations / steps can be decomposed, combined or partially combined, so the actual execution order may be changed according to the actual situation.

[0059] Some embodiments of the present application will be described in detail below with reference to the accompanying drawings. The following examples and features in the examples can be combined with each other without conflict.

[0060] Please refer to Fig. 1, which is a circuit structure block diagram of a radio frequency front end module provided by an embodiment of the present application.

[0061] As shown in Fig. 1, the radio frequency front end module 1 includes a protection circuit 100, a bias circuit 200 and a power amplifier circuit 300. Among them, the bias circuit 200 is connected with the power amplifier circuit 300, and is used to provide a bias signal for the power amplifier circuit 300, and the bias signal will affect the output power and linearity of the power amplifier circuit 300.

[0062] The protection circuit 100 is connected with the bias circuit 200, and the protection circuit 100 is configured such that the clamping value on the output branch of the protection circuit 100 connected with the bias circuit 200 is in a first relationship with the temperature in the target temperature interval. That is, the protection circuit 100 is connected with the bias circuit 200 such that the clamping signal can be used to limit the maximum value of the bias signal output by the bias circuit 200, and the clamping value on the output branch of the protection circuit 100 connected with the bias circuit 200 is related to the temperature of the corresponding target temperature interval.

[0063] Optionally, the target temperature interval includes at least a first temperature interval and a third temperature interval, and the minimum value of the third temperature interval is greater than the maximum value of the first temperature interval, and the first relationship includes a first correlation relationship and a second correlation relationship. The first correlation relationship and the second correlation relationship can be the same or different. Wherein, the clamping value on the output branch of the protection circuit 100 connected with the bias circuit 200 is in a first correlation relationship with the temperature in the first temperature interval, and in a second correlation relationship with the temperature in the third temperature interval.

[0064] For example, if the first correlation relationship is a negative correlation with the temperature, that is, the clamping value on the output branch of the protection circuit 100 is negatively correlated with the temperature, then the second correlation relationship is a positive correlation with the temperature, that is, the clamping value on the output branch of the protection circuit is positively correlated with the temperature. That is, in the first temperature interval, the higher the temperature, the smaller the clamping value on the output branch of the protection circuit 100, and vice versa, the lower the temperature, the larger the clamping value on the output branch of the protection circuit 100; in the third temperature interval, the higher the temperature, the larger the clamping value on the output branch of the protection circuit 100, and vice versa, the lower the temperature, the smaller the clamping value on the output branch of the protection circuit 100.

[0065] Or, if the first correlation relationship is a positive correlation with the temperature, that is, the clamping value on the output branch of the protection circuit 100 is positively correlated with the temperature, then the second correlation relationship is a negative correlation with the temperature, that is, the clamping value on the output branch of the protection circuit is negatively correlated with the temperature. That is, in the first temperature interval, the higher the temperature, the larger the clamping value on the output branch of the protection circuit 100, and vice versa, the lower the temperature, the smaller the clamping value on the output branch of the protection circuit 100. In the third temperature interval, the higher the temperature, the smaller the clamping value on the output branch of the protection circuit 100, and vice versa, the lower the temperature, the larger the clamping value on the output branch of the protection circuit 100.

[0066] Optionally, the target temperature interval further includes a second temperature interval, in which the clamping value on the output branch of the protection circuit 100 is independent of the temperature, and the second temperature interval is located between the first temperature interval and the third temperature interval.

[0067] As can be seen from the above embodiments, the clamping value on the output branch of the protection circuit 100 in the radio frequency front-end module 1 provided by the present application can change with the temperature in different first temperature intervals and third temperature intervals, so that the bias signal output by the bias circuit 200 also changes with the change of the clamping value in the first temperature interval and the third temperature interval, so that the circuit or device in the radio frequency front-end module can always work in the safe working area in different working environments, and the circuit or device in the radio frequency front-end module is protected, so as to effectively avoid the performance degradation of the power amplifier caused by too high or too low temperature, and effectively improve the stability and reliability of the radio frequency front-end module.

[0068] Please refer to FIG. 2, the bias circuit 200 is connected with the output branch of the protection circuit 100, and the clamping value on the output branch connected with the bias circuit changes with the temperature, wherein the size of the bias signal output by the bias circuit 200 is related to the size of the clamping value corresponding to the clamping signal, and the clamping value can change with the temperature in the corresponding target temperature interval.

[0069] Optionally, the maximum value of the bias signal output by the bias circuit 200 is less than or equal to the clamping value corresponding to the clamping signal on the output branch of the protection circuit 100. That is, it can be understood that the maximum value of the bias signal output by the bias circuit 200 and the temperature have a fifth correlation relationship in the first temperature interval, and the maximum value of the bias signal output by the bias circuit 200 and the temperature have a sixth correlation relationship in the third temperature interval, the fifth correlation relationship and the sixth correlation relationship can be the same or different, and the minimum value of the third temperature interval is greater than the maximum value of the first temperature interval.

[0070] Wherein, the fifth correlation relationship and the first correlation relationship have the same correlation with the temperature, and the sixth correlation relationship and the second correlation relationship have the same correlation with the temperature, that is, when the first correlation relationship is a negative correlation with the temperature, the fifth correlation relationship is also a negative correlation with the temperature, and when the first correlation relationship is a positive correlation with the temperature, the fifth correlation relationship is also a positive correlation with the temperature.

[0071] Similarly, when the second correlation relationship is a negative correlation with the temperature, the sixth correlation relationship is also a negative correlation with the temperature, and when the second correlation relationship is a positive correlation with the temperature, the sixth correlation relationship is also a positive correlation with the temperature.

[0072] Optionally, in the fifth correlation relationship, the maximum value of the bias signal output by the bias circuit 200 and the temperature are negatively correlated, and in the sixth correlation relationship, the maximum value of the bias signal output by the bias circuit 200 and the temperature are positively correlated. That is, in the first temperature interval, the higher the temperature, the smaller the maximum value of the bias signal output by the bias circuit 200, and vice versa, the lower the temperature, the larger the maximum value of the bias signal output by the bias circuit 200. In the third temperature interval, the higher the temperature, the larger the maximum value of the bias signal output by the bias circuit 200, and vice versa, the lower the temperature, the smaller the maximum value of the bias signal output by the bias circuit 200.

[0073] Alternatively, in the fifth correlation relationship, the maximum value of the bias signal output by the bias circuit 200 and the temperature are positively correlated, and in the sixth correlation relationship, the maximum value of the bias signal output by the bias circuit 200 and the temperature are negatively correlated. That is, in the first temperature interval, the higher the temperature, the larger the maximum value of the bias signal output by the bias circuit 200, and vice versa, the lower the temperature, the smaller the maximum value of the bias signal output by the bias circuit 200. In the third temperature interval, the higher the temperature, the smaller the maximum value of the bias signal output by the bias circuit 200, and vice versa, the lower the temperature, the larger the maximum value of the bias signal output by the bias circuit 200.

[0074] Optionally, the target temperature interval further includes a second temperature interval, in which the maximum value of the bias signal output by the bias circuit 200 and the temperature are irrelevant, and the second temperature interval is located between the first temperature interval and the third temperature interval.

[0075] As shown in FIG. 2, in some embodiments, the second end of the bias circuit 200 is configured to be connected with the protection circuit 100, the third end of the bias circuit 200 is configured to be connected with the power amplification circuit 300 and output the bias signal to the power amplification circuit, and the first end of the bias circuit 200 is configured to receive the bias source signal. Wherein, the size of the bias source signal is irrelevant to the temperature, that is, the bias source signal is a constant value, and the size of the bias source signal will not change with the change of the temperature. Alternatively, the size of the bias source signal is related to the temperature, that is, the size of the bias source signal can change with the change of the temperature, which is not limited here.

[0076] The bias circuit 200 has at least a bias amplification state and a saturation state. When the bias circuit 200 is in the bias amplification state, the size of the bias signal output by the bias circuit 200 is related to the bias source signal received by the first end (bias control end). When the bias circuit 200 is in the saturation state, the bias signal output by the bias circuit 200 is clamped to equal the clamping value corresponding to the clamping signal output by the output branch of the protection circuit 100, that is, when the bias circuit 200 is in the saturation state, the maximum value of the bias signal output by the bias circuit 200 is equal to the clamping value corresponding to the clamping signal, that is, by setting the clamping value on the output branch of the protection circuit 100 connected to the bias circuit 200, the maximum value of the bias signal output by the bias circuit 200 can be effectively limited, thereby preventing irreversible damage to the components on the branch of the power amplifier circuit 300 caused by the power amplifier circuit 300 receiving a bias signal output by the bias circuit 200 exceeding the threshold value.

[0077] The power amplifier circuit 300 is connected to the output end of the bias circuit 200 and is used to receive the bias signal output by the bias circuit 200 and the radio frequency input signal, and output a radio frequency output signal. The output power of the power amplifier circuit 300 is related to the size of the bias signal output by the bias circuit 200, for example, the output power within the effective amplification range of the power amplifier circuit 300 is positively related to the size of the bias signal. The clamping signal is a current signal, and the bias signal can be a bias voltage or a bias current.

[0078] As shown in FIG. 2, for example, the bias circuit 200 includes a bias transistor 201. The first end of the bias circuit 200 is the first end of the bias transistor 201, and the first end of the bias transistor 201 is configured to receive a bias source signal. The second end of the bias circuit 200 is the second end of the bias transistor 201, and the second end of the bias transistor 201 is configured to be connected to the output branch of the protection circuit 100. The third end of the bias circuit 200 is the third end of the bias transistor 201, and the third end of the bias transistor 201 is connected to the power amplifier circuit and is configured to output a bias signal to the power amplifier circuit.

[0079] The bias transistor 201 can be a bipolar transistor or a field effect transistor. If the bias transistor 201 is a bipolar transistor, the first end of the bias transistor 201 is the base, the second end of the bias transistor 201 is the collector, and the third end of the bias transistor 201 is the emitter. If the bias transistor 201 is a field effect transistor, the first end of the bias transistor 201 is the gate, the second end of the bias transistor 201 is the source, and the third end of the bias transistor 201 is the drain.

[0080] As shown in FIG. 2, in some embodiments, the bias circuit 200 further comprises a first capacitor C1, a first end of the first capacitor C1 is connected with the second end of the bias transistor 201, and a second end of the first capacitor C1 is grounded.

[0081] For example, the clamping value corresponding to the clamping signal on the output branch of the bias circuit 200 and the protection circuit 100 is in a first correlation with the temperature in a first temperature interval and in a second correlation with the temperature in a second temperature interval.

[0082] As shown in FIG. 2, taking the clamping signal as an example, the clamping value on the output branch of the bias circuit 200 and the protection circuit 100 is related to the temperature, that is, the clamping current Iclamp can change with the change of the temperature, that is, the size of the clamping current Iclamp input to the second end of the bias transistor 201 changes with the change of the temperature. Further, the maximum value of the bias signal output by the bias circuit 200 is less than or equal to the clamping value corresponding to the clamping signal.

[0083] When β*IREF<Iclamp, the bias transistor 201 is in a bias amplification state, and the current value flowing through the bias transistor 201 is β*IREF, that is, the size of the bias signal output by the bias circuit 200 is related to the bias source signal received by the bias control end.

[0084] When β*IREF>Iclamp, the bias transistor 201 is in a saturation state, so that the bias circuit 200 is in a saturation state, at this time, the current flowing through the second end of the bias transistor 201 is clamped to be equal to the clamping current Iclamp, and the current value flowing through the bias transistor 201 is equal to the clamping value corresponding to the clamping signal, wherein β=IC / IB, that is, β is the amplification multiple of the bias transistor 201, IC is the collector current of the bias transistor, and IB is the base current of the bias transistor.

[0085] As can be seen from the above embodiments, the size of the bias signal output by the bias circuit 200 is related to the clamping value on the output branch of the bias circuit 200 and the protection circuit. By clamping the current at the second end of the bias transistor to be equal to the clamping current Iclamp, the bias transistor can be turned off to not output the bias signal, or the size of the bias signal output by the bias transistor can be limited to a certain preset value, thereby realizing the overcurrent protection of the power amplifier circuit.

[0086] When the bias circuit 200 is in a saturation state, the maximum value of the bias signal output by the bias circuit 200 is clamped to the clamping value corresponding to the clamping signal on the output branch of the protection circuit 100. By setting the clamping signal output by the protection circuit 100, the maximum value of the bias signal output by the bias circuit 200 can be effectively limited, thereby preventing the power amplifier circuit 300 from causing irreversible damage to the power devices in the amplifier circuit 300 due to receiving a bias signal output by the bias circuit 200 exceeding the threshold value. This allows the radio frequency front-end module 1 to always operate in a safe operating area under different working environments, thereby protecting the circuits or devices in the radio frequency front-end module 1 and effectively avoiding the performance degradation of the power amplifier caused by excessively high or low temperature, thereby effectively improving the stability and reliability of the radio frequency front-end module 1.

[0087] Referring to FIG. 3A, in some embodiments, the bias circuit 200 has a first output end and a second output end. The power amplifier circuit 300 includes a first amplification branch 301 and a second amplification branch 302. The first output end of the bias circuit 200 is connected to the input end of the first amplification branch 301 and is configured to output a first bias signal to the first amplification branch 301. The second output end of the bias circuit 200 is connected to the input end of the second amplification branch 302 and is configured to output a second bias signal to the second amplification branch 302; wherein the maximum value of the first bias signal output by the bias circuit 200 is less than or equal to the clamping value; and the maximum value of the second bias signal output by the bias circuit 200 is less than or equal to the clamping value.

[0088] It can be understood that the first bias signal output by the first output end of the bias circuit 200 and the second bias signal output by the second output end of the bias circuit 200 can be bias signals of the same size or bias signals of different sizes, as long as the maximum values of the first bias signal and the second bias signal are less than or equal to the clamping value corresponding to the clamping signal on the output branch of the protection circuit 100 connected to the bias circuit 200.

[0089] Referring to FIG. 3B, in some embodiments, the power amplifier circuit 300 includes a first amplification branch 301 and a second amplification branch 302, and the bias circuit 200 includes a first bias circuit 200a and a second bias circuit 200b.

[0090] The protection circuit 100 is connected with the first bias circuit 200a and the second bias circuit 200b respectively. The output terminal of the first bias circuit 200a is connected with the input terminal of the first amplification branch 301, and is configured to output a first bias signal to the first amplification branch 301. The output terminal of the second bias circuit 200b is connected with the input terminal of the second amplification branch 302, and is configured to output a second bias signal to the second amplification branch 302. The maximum value of the first bias signal output by the first bias circuit 200a is less than or equal to the clamping value. The maximum value of the second bias signal output by the second bias circuit 200b is less than or equal to the clamping value.

[0091] It can be understood that the first bias signal output by the first bias circuit 200a and the second bias signal output by the second bias circuit 200b can be bias signals of the same size or bias signals of different sizes, as long as the maximum value of the first bias signal and the maximum value of the second bias signal are both less than the clamping value corresponding to the clamping signal on the output branch of the protection circuit 100 connected with the bias circuit.

[0092] Optionally, the first bias circuit 200a and the second bias circuit 200b in FIG. 3B have the same circuit structure as the bias circuit 200 in FIG. 2, which will not be described here.

[0093] Referring to FIG. 4A, in some embodiments, the power amplification circuit 300 includes a first-stage amplification circuit 300a and a second-stage amplification circuit 300b connected in series. The first output terminal of the bias circuit 200 is connected with the input terminal of the first-stage amplification circuit 300a, and is configured to output a first bias signal to the first-stage amplification circuit 300a. The second output terminal of the bias circuit 200 is connected with the input terminal of the second-stage amplification circuit 300b, and is configured to output a second bias signal to the second-stage amplification circuit 300b. The maximum value of the first bias signal output by the bias circuit 200 is less than or equal to the clamping value. The maximum value of the second bias signal output by the bias circuit 200 is less than or equal to the clamping value.

[0094] Referring to FIG. 4B, in some embodiments, the power amplification circuit 300 includes a first-stage amplification circuit 300a and a second-stage amplification circuit 300b connected in series. The bias circuit 200 includes a first bias circuit 200a and a second bias circuit 200b; the protection circuit 100 is connected with the first bias circuit 200a and the second bias circuit 200b respectively, an output end of the first bias circuit 200a is connected with an input end of the first-stage amplification circuit 300a, and the first bias circuit 200a is configured to output a first bias signal to the first-stage amplification circuit 300a; an output end of the second bias circuit 200b is connected with an input end of the second-stage amplification circuit 300b, and the second bias circuit 200b is configured to output a second bias signal to the second-stage amplification circuit 300b; wherein a maximum value of the first bias signal output by the first bias circuit 200a is less than or equal to a clamping value; a maximum value of the second bias signal output by the second bias circuit 200b is less than or equal to the clamping value.

[0095] Optionally, the first bias circuit 200a and the second bias circuit 200b in FIG. 4B and the bias circuit 200 in FIG. 2 have the same circuit structure, which is not described here.

[0096] As shown in FIG. 1, in some embodiments, the protection circuit 100 includes a temperature compensation circuit 110 and a clamping circuit 120, the clamping circuit 120 is connected with a branch where a compensation node of the temperature compensation circuit 110 is located, and an output end of the clamping circuit 120 is connected with the bias circuit 200.

[0097] The temperature compensation circuit 110 is configured to output a corresponding compensation signal to the compensation node in a target temperature range, the compensation signal includes a first compensation signal or a second compensation signal, and the first compensation signal and the temperature present a third correlation in a first temperature range, and the second compensation signal and the temperature present a fourth correlation in a third temperature range. The clamping circuit 120 is configured to make the bias circuit 200 and a clamping value on an output branch of the clamping circuit 120 present a first correlation with the temperature in the first temperature range based on the first compensation signal, and make the bias circuit 200 and the clamping value on the output branch of the clamping circuit 120 present a second correlation with the temperature in the third temperature range based on the second compensation signal.

[0098] Optionally, in the third correlation, the temperature compensation circuit 110 outputs the corresponding compensation signal to the compensation node and the temperature presents a negative correlation, and in the fourth correlation, the temperature compensation circuit 110 outputs the corresponding compensation signal to the compensation node and the temperature presents a positive correlation.

[0099] Alternatively, in the third correlation, the temperature compensation circuit 110 outputs the corresponding compensation signal to the compensation node and the temperature presents a positive correlation, and in the fourth correlation, the temperature compensation circuit 110 outputs the corresponding compensation signal to the compensation node and the temperature presents a negative correlation.

[0100] Optionally, the clamping circuit 120 is configured to make the clamping value corresponding to the clamping signal output on the output branch of the clamping circuit 120 less than or equal to the first threshold based on any one of the first compensation signal and the second compensation signal, wherein the first threshold can be set according to the voltage, current, and other electrical signal bearing capacity of the power device in the power amplification circuit 300, while based on the fact that the electrical signal bearing capacity of the power device in the power amplification circuit 300 is different under different temperature environments, the value of the first threshold is different under different temperature conditions, and the first threshold corresponding to the third temperature interval is less than the threshold corresponding to the first temperature interval, and the first threshold corresponding to the second temperature interval is less than the threshold corresponding to the third temperature interval. For example, in the first temperature interval, the first threshold is set to 9 mA, in the second temperature interval, the first threshold is set to 10 mA, and in the third temperature interval, the first threshold is set to 8 mA.

[0101] In at least one embodiment, when at room temperature (for example: 10-50°C), the average current of the Vbatt output of the bias transistor is 10 mA; when in the first temperature interval (low temperature) (for example: less than 10°C), the first threshold is set to less than 10 mA (for example: 9 mA); when in the third temperature interval (high temperature) (for example: greater than 50°C), the first threshold is set to less than 10 mA (for example: 8 mA); thereby avoiding damage to the components (for example: power amplifier, filter) on the branch of the power amplification circuit due to excessive current or power in high or low temperature environments.

[0102] Please refer to FIG. 5 and FIG. 6, FIG. 5 is a specific circuit structure schematic diagram of a first kind of embodiment of the temperature compensation circuit provided by the present application.

[0103] As shown in FIG. 5 and FIG. 6, the temperature compensation circuit 110 is provided with a compensation node (such as compensation node D) for connecting the clamping circuit 120, and the temperature compensation circuit 110 comprises at least one first temperature compensation module 10, at least one second temperature compensation module 20, a switch module 30 connecting the first temperature compensation module 10 and the second temperature compensation module 20, and a power supply module 40.

[0104] The first temperature compensation module 10 is used to output a first compensation signal to the compensation node within the first temperature interval, and the first compensation signal has a third correlation with temperature. The second temperature compensation module 20 is used to output a second compensation signal to the compensation node within the third temperature interval, and the second compensation signal has a fourth correlation with temperature.

[0105] The switch module 30 is configured to connect the first temperature compensation module 10 and the second temperature compensation module 20 in the first temperature range and disconnect the first temperature compensation module 10 and the second temperature compensation module 20 in the third temperature range.

[0106] The power module 40 is connected to the compensation node or the branch in which the compensation node is located, and is configured to provide a basic electrical signal to the compensation node, which can be a basic voltage or a basic current.

[0107] In some embodiments, the first temperature compensation module 10 and the second temperature compensation module 20 of the temperature compensation circuit 110 output compensation signals independent of temperature in a second temperature range between the first temperature range and the third temperature range.

[0108] Optionally, the first temperature compensation module 10 and the second temperature compensation module 20 output compensation signals of zero in the second temperature range.

[0109] As shown in FIG. 5, the first temperature compensation module 10 is configured to receive a first positive temperature coefficient current and a first zero temperature coefficient current, which can enable the first temperature compensation module 10 to output a first compensation signal to the compensation node in the first temperature range. The second temperature compensation module 20 is configured to receive a second positive temperature coefficient current and a second zero temperature coefficient current, which can enable the second temperature compensation module 20 to output a second compensation signal to the compensation node in the third temperature range.

[0110] The first positive temperature coefficient current is a current output by a first positive temperature coefficient power source A1 connected to the first temperature compensation module 10, and the first positive temperature coefficient power source A1 can be a positive temperature coefficient current source. The first zero temperature coefficient current is a current output by a first zero temperature coefficient power source B1 connected to the first temperature compensation module 10, and the first zero temperature coefficient power source B1 can be a zero temperature coefficient current source. The first positive temperature coefficient current is positively correlated with temperature. The first zero temperature coefficient current is independent of temperature.

[0111] The second positive temperature coefficient current is a current output by a second positive temperature coefficient power source A2 connected to the second temperature compensation module 20, and the second positive temperature coefficient power source A2 can be a positive temperature coefficient current source. The second zero temperature coefficient current is a current output by a second zero temperature coefficient power source B2 connected to the second temperature compensation module 20, and the second zero temperature coefficient power source B2 can be a zero temperature coefficient current source. The second positive temperature coefficient current is positively correlated with temperature. The second zero temperature coefficient current is independent of temperature.

[0112] As shown in FIG. 5, the first positive temperature coefficient current output by the first positive temperature coefficient power supply A1 and the first zero temperature coefficient current output by the first zero temperature coefficient power supply B1 are controllable, and the second positive temperature coefficient current output by the second positive temperature coefficient power supply A2 and the second zero temperature coefficient current output by the second zero temperature coefficient power supply B2 are controllable. It is only necessary to ensure that, in the first temperature interval, the first temperature compensation module 10 can output a first compensation signal to the compensation node after receiving the first positive temperature coefficient current and the first zero temperature coefficient current. In the third temperature interval, the second temperature compensation module 20 can output a second compensation signal to the compensation node after receiving the second positive temperature coefficient current and the second zero temperature coefficient current.

[0113] In this embodiment, the first positive temperature coefficient current and the second positive temperature coefficient current are positively correlated with temperature, and the first zero temperature coefficient current and the second zero temperature coefficient current are not correlated with temperature.

[0114] For example, the minimum value of the first temperature interval is t0, and the maximum value is t1. The minimum value of the third temperature interval is t2, and the maximum value is t3. Therefore, t3>t2>t1>t0, t1 is less than the first temperature threshold, and t2 is greater than the second temperature threshold.

[0115] For example, the interval temperature value corresponding to the first temperature interval is (t0-t1], the interval temperature value corresponding to the second temperature interval is (t1-t2), and the interval temperature value corresponding to the third temperature interval is [t2-t3). The values of t0, t1, t2, and t3 can be set as needed. Optionally, the first temperature threshold is set to 20℃, and the second temperature threshold is set to 30℃. Therefore, t1 can be set to any value between -40℃ and 20℃, and t2 can be set to any value between 30℃ and 125℃. For example, t1 can be -5℃, 0℃, or 10℃, and t2 can be 35℃, 40℃, or 50℃. It can be understood that the values of t0, t1, t2, and t3 can also be set as needed.

[0116] In the first temperature interval (t0-t1], the first temperature compensation module 10 outputs a first compensation signal to the compensation node after receiving the first positive temperature coefficient current and the first zero temperature coefficient current. The second temperature compensation module 20 does not output a compensation signal to the compensation node after receiving the second positive temperature coefficient current and the second zero temperature coefficient current.

[0117] In the second temperature interval (t1-t2), the first temperature compensation module 10 does not output a compensation signal to the compensation node after receiving the first positive temperature coefficient current and the first zero temperature coefficient current. Moreover, the second temperature compensation module 20 does not output a compensation signal to the compensation node after receiving the second positive temperature coefficient current and the second zero temperature coefficient current.

[0118] In the third temperature interval [t2-t3), the second temperature compensation module 20 outputs a second compensation signal to the compensation node after receiving the second positive temperature coefficient current and the second zero temperature coefficient current. Optionally, in the third temperature interval [t2-t3), the first temperature compensation module 10 does not output a compensation signal to the compensation node after receiving the first positive temperature coefficient current and the first zero temperature coefficient current.

[0119] In some embodiments, the second temperature interval is determined according to the current-temperature correlation characteristics corresponding to the target temperature coefficient current, and the target temperature coefficient current includes the first positive temperature coefficient current, the first zero temperature coefficient current, the second positive temperature coefficient current and the second zero temperature coefficient current.

[0120] Optionally, the temperature value corresponding to the case that the first positive temperature coefficient current is equal to the first zero temperature coefficient current is the minimum temperature value of the second temperature interval. The temperature value corresponding to the case that the second positive temperature coefficient current is equal to the second zero temperature coefficient current is the maximum temperature value of the second temperature interval.

[0121] The temperature value corresponding to the case that the first positive temperature coefficient current is equal to the first zero temperature coefficient current is the minimum temperature value t1 of the second temperature interval. The temperature value corresponding to the case that the second zero temperature coefficient current is equal to the second positive temperature coefficient current is the maximum temperature value t2 of the second temperature interval.

[0122] As can be seen from the above embodiments, the temperature compensation circuit 110 provided by the embodiments of the present application can output a compensation signal to the clamping circuit 120, and the compensation signal output by the temperature compensation circuit 110 to the clamping circuit 120 can change with the change of temperature, so that the clamping value corresponding to the clamping signal output on the output branch of the clamping circuit 120 changes with the change of the compensation signal output by the temperature compensation circuit to the compensation node.

[0123] Therefore, in the scenario that the protection circuit 100 is applied to the power amplifier, after the bias circuit 200 is connected with the protection circuit 100, the clamping value on the output branch connected with the protection circuit and the bias circuit can be used as a bias pre-signal (such as a bias source signal or a bias control signal), so that the bias circuit 200 can output a bias signal following the change of temperature to the power amplification circuit 300, that is, the bias signal output by the bias circuit 200 is limited to be less than or equal to the clamping value, so as to avoid the case that the performance of the power amplifier is deteriorated due to too high or too low temperature, thereby effectively improving the stability and reliability of the radio frequency front-end module.

[0124] Meanwhile, in order to realize the accuracy of the compensation signal output by the temperature compensation circuit 110 of the protection circuit 100 under different temperature conditions, the temperature compensation circuit 110 provided by the application outputs a first compensation signal to the compensation node in the first temperature interval through the first temperature compensation module 10, and outputs a second compensation signal to the compensation node in the third temperature interval through the second temperature compensation module 20, and the first compensation signal has a third correlation with the temperature, and the second compensation signal has a fourth correlation with the temperature, and the third correlation and the fourth correlation have different correlations with the temperature, so that the temperature compensation circuit 110 can output compensation signals with different relationships with the temperature in different temperature intervals, so that the application scenarios of the temperature compensation circuit 110 are more abundant.

[0125] Further, the maximum value of the bias signal output by the bias circuit 200 is equal to the clamping value corresponding to the clamping signal on the output branch connected with the protection circuit 100 and the bias circuit 200, that is, the maximum value of the bias signal output by the bias circuit 200 can be effectively limited by setting the clamping value corresponding to the clamping signal on the output branch connected with the protection circuit 100 and the bias circuit 200, and further, irreversible damage to the components (such as power devices or filter devices) on the branch of the power amplification circuit 300 caused by the bias signal output by the bias circuit 200 exceeding the threshold value can be prevented.

[0126] Further, based on the problem that the first temperature compensation module 10 leaks the compensation signal to the compensation node under high temperature conditions, such as the third temperature interval, the existence of the signal leakage problem will affect the accuracy of the electrical signal at the compensation node of the third temperature interval temperature compensation circuit 110, therefore, the switch module 30 is arranged in the temperature compensation circuit 110 of the application, the first temperature compensation module 10 and the second temperature compensation module 20 are connected through the switch module 30, and the connection path between the first temperature compensation module 10 and the second temperature compensation module 20 is turned on by the switch module in the first temperature interval, and the connection path between the first temperature compensation module 10 and the second temperature compensation module 20 is turned off by the switch module in the third temperature interval. In order to effectively avoid the first temperature compensation module 10 from leaking the compensation signal to the compensation node in the third temperature interval, and affect the accuracy of the compensation signal output by the temperature compensation circuit 110 to the compensation node in the third temperature interval, so as to improve the accuracy and reliability of the compensation signal output by the temperature compensation circuit 110 to the compensation node, so as to realize higher accuracy temperature compensation.

[0127] In some embodiments, the switch module 30 is also used to disconnect the connection path between the first temperature compensation module 10 and the second temperature compensation module 20 in the second temperature interval.

[0128] Optionally, the switch module 30 is configured to turn on the connection path between the first temperature compensation module 10 and the second temperature compensation module 20 when the temperature is less than or equal to the first temperature threshold, and turn off the connection path between the first temperature compensation module 10 and the second temperature compensation module 20 when the temperature is greater than the first temperature threshold; wherein the first temperature threshold is less than the maximum temperature value of the third temperature range and greater than the maximum temperature value of the first temperature range.

[0129] That is, at least in the third temperature range, the switch module 30 turns off the connection path between the first temperature compensation module 10 and the second temperature compensation module 20, so that the first temperature compensation module 10 cannot output a signal to the compensation node. Alternatively, in the second temperature range and the third temperature range, the switch module 30 turns off the connection path between the first temperature compensation module 10 and the second temperature compensation module 20, so that the first temperature compensation module 10 cannot output a compensation signal to the compensation node.

[0130] In this embodiment, in order to avoid the problem of the first temperature compensation module 10 leaking a compensation signal to the compensation node in the second temperature range, and to improve the accuracy of the compensation signal output by the temperature compensation circuit 110 to the compensation node, the application controls the switch module to turn off the connection path between the first temperature compensation module 10 and the second temperature compensation module 20 in the second temperature range, so as to effectively avoid the problem of the first temperature compensation module 10 leaking a compensation signal to the compensation node in the second temperature range.

[0131] For ease of understanding, the following description takes the compensation signal output by the temperature compensation circuit 110 to the compensation node as an example to illustrate the compensation current.

[0132] As shown in FIG. 5 and FIG. 6, in some embodiments, the protection circuit further comprises a power supply module 40. The power supply module 40 comprises an operational amplifier 401 and a voltage dividing unit 402, the first end of the operational amplifier 401 is connected to the output end of the operational amplifier 401, and the output end of the amplifier 401 is connected to the first end of the voltage dividing unit 402, the second end of the voltage dividing unit 402 is connected to the compensation node or the path where the compensation node is located. The second end of the operational amplifier 401 is configured to receive a preset electrical signal, such as a voltage signal VBG. Optionally, the voltage dividing unit 402 includes but is not limited to a resistor.

[0133] Wherein, the preset electrical signal VBG is a constant value, the resistance value of the voltage dividing unit 402 is R, the potential of point C in the power supply module 40 is VBG, and the voltage value at the compensation node is VOUT. Then, VOUT = VBG - IOUT * R, IOUT is the compensation current input by the temperature compensation circuit 110 to the compensation node.

[0134] Therefore, in the first temperature interval, IOUT decreases as temperature increases, so VOUT increases as temperature increases, VOUT is a positive temperature coefficient voltage. In the second temperature interval, IOUT is zero, VOUT = VBG. In the third temperature interval, IOUT increases as temperature increases, so VOUT decreases as temperature increases, VOUT is a negative temperature coefficient voltage.

[0135] That is, in the first temperature interval, if the first compensation signal (compensation current) output by the temperature compensation circuit 110 to the compensation node has a third correlation with temperature, the correlation between the corresponding compensation voltage at the compensation node and temperature is different from the third correlation between the first compensation signal (compensation current) and temperature.

[0136] And, in the third temperature interval, if the second compensation signal (compensation current) output by the temperature compensation circuit 110 to the compensation node has a fourth correlation with temperature, the correlation between the corresponding compensation voltage at the compensation node and temperature is different from the fourth correlation between the first compensation signal (compensation current) and temperature, and the third correlation and the fourth correlation have different correlations with temperature.

[0137] That is, in the first temperature interval, if the first compensation signal (compensation current) output by the temperature compensation circuit 110 to the compensation node has a positive correlation with temperature, the corresponding compensation voltage at the compensation node has a negative correlation with temperature. And, in the third temperature interval, the second compensation signal (compensation current) output by the temperature compensation circuit 110 to the compensation node has a negative correlation with temperature, and the corresponding compensation voltage at the compensation node has a positive correlation with temperature.

[0138] Or, in the first temperature interval, if the first compensation signal (compensation current) output by the temperature compensation circuit 110 to the compensation node has a negative correlation with temperature, the corresponding compensation voltage at the compensation node has a positive correlation with temperature. And, in the third temperature interval, the second compensation signal (compensation current) output by the temperature compensation circuit 110 to the compensation node has a positive correlation with temperature, and the corresponding compensation voltage at the compensation node has a negative correlation with temperature.

[0139] As shown in FIGS. 5 and 6, in some embodiments, the first temperature compensation module 10 includes a first positive temperature compensation unit 101 for receiving a first positive temperature coefficient current and a first zero temperature compensation unit 102 connected to the first positive temperature compensation unit 101, the first zero temperature compensation unit 102 being configured to receive a first zero temperature coefficient current; in the first temperature interval, the first temperature compensation module 10 outputs a first compensation signal to the compensation node after receiving the first positive temperature coefficient current and the first zero temperature coefficient current.

[0140] Exemplarily, the first positive temperature compensation unit 101 comprises a first transistor P1 and a second transistor P2, and the first zero temperature compensation unit 102 comprises a third transistor N1 and a fourth transistor N2. The controlled ends of the first transistor P1 and the second transistor P2 are configured to be connected to a first positive temperature coefficient power supply, and the first positive temperature coefficient power supply is configured to output a first positive temperature coefficient current. The controlled ends of the third transistor N1 and the fourth transistor N2 are configured to be connected to a first zero temperature coefficient power supply, and the first zero temperature coefficient power supply is configured to output a first zero temperature coefficient current.

[0141] The first end of the first transistor P1 is configured to be connected to a power supply VDD, the second end of the first transistor P1 is connected to the first end of the second transistor P2, the second end of the second transistor P2 is connected to the second end of the third transistor N1 and the first end of the fourth transistor N2, the second end of the fourth transistor N2 is grounded, the first end of the third transistor N1 is connected to the switch module 30 and connected to a branch where the compensation point is located through the switch module 30.

[0142] Further, in the first temperature interval, the first transistor P1, the second transistor P2, the third transistor N1 and the fourth transistor N2 are in a conductive state, and the first temperature compensation module 10 outputs a first compensation signal to the compensation node through the third transistor N1. In the second temperature interval and the third temperature interval, no current passes through the third transistor N1 to output to the compensation node, and the third transistor N1 is equivalent to be in an off state.

[0143] Optionally, the first transistor P1 and the second transistor P2 are first type transistors, the third transistor N1 and the fourth transistor N2 are the same type transistors, and the third transistor N1 and the fourth transistor N2 are second type transistors different from the first type transistors. For example, the first type transistors are PMOS transistors, and the second type transistors are NMOS transistors.

[0144] As shown in FIG. 5, in some embodiments, the second temperature compensation module 20 comprises a second positive temperature compensation unit 201 and a second zero temperature compensation unit 202 connected to the second positive temperature compensation unit 201. The second positive temperature compensation unit 201 is configured to receive a second positive temperature coefficient current, and the second zero temperature compensation unit 202 is configured to receive a second zero temperature coefficient current. In the third temperature interval, after receiving the second positive temperature coefficient current and the second zero temperature coefficient current, the second temperature compensation module 20 outputs a second compensation signal to the compensation node.

[0145] Exemplarily, the second positive temperature compensation unit 201 comprises a fifth transistor N3 and a sixth transistor N4, and the second zero temperature compensation unit 202 comprises a seventh transistor P3 and an eighth transistor P4, wherein the controlled end of the fifth transistor N3 and the sixth transistor N4 is connected with the second positive temperature coefficient power supply, and the second positive temperature coefficient power supply is configured to output a second positive temperature coefficient current; the controlled end of the seventh transistor P3 and the eighth transistor P4 is connected with the second zero temperature coefficient power supply, and the second zero temperature coefficient power supply is configured to output a second zero temperature coefficient current.

[0146] The first end of the seventh transistor P3 is connected with the power supply, the second end of the seventh transistor P3 is connected with the first end of the eighth transistor P4, the second end of the eighth transistor P4 is connected with the second end of the fifth transistor N3 and the first end of the sixth transistor N4, the second end of the sixth transistor N4 is grounded, and the first end of the fifth transistor N3 is connected with the branch where the compensation point is located.

[0147] Further, in the third temperature interval, the fifth transistor N3, the sixth transistor N4, the seventh transistor P3 and the eighth transistor P4 are in the conducting state, and the second temperature compensation module 20 outputs the second compensation signal to the compensation node through the fifth transistor N3. In the first temperature interval and the second temperature interval, no current passes through the fifth transistor N3 to output to the compensation node, which is equivalent to the fifth transistor N3 being in the off state.

[0148] Optionally, the fifth transistor N3 and the sixth transistor N4 are third type transistors, the seventh transistor P3 and the eighth transistor P4 are fourth type transistors, and the seventh transistor P3 and the eighth transistor P4 are fourth type transistors different from the third type transistors. For example, the third type transistors are NMOS tubes, and the fourth type transistors are PMOS tubes.

[0149] As shown in FIG. 5 and FIG. 6, the first positive temperature coefficient power supply A1 is configured to output a first positive temperature coefficient current to the first transistor P1 and the second transistor P2, and the first zero temperature coefficient power supply B1 is configured to output a first zero temperature coefficient current to the third transistor N1 and the fourth transistor N2, wherein the size of the first positive temperature coefficient current and the first zero temperature coefficient current can be set as required.

[0150] The second positive temperature coefficient power supply A2 is configured to output a second positive temperature coefficient current to the seventh transistor N3 and the eighth transistor N4, and the second zero temperature coefficient power supply B2 is configured to output a second zero temperature coefficient current to the fifth transistor P3 and the sixth transistor P4, wherein the size of the second positive temperature coefficient current and the second zero temperature coefficient current can be set as required.

[0151] In the first temperature interval (t0-t1], by outputting the first positive temperature coefficient current to the first transistor P1 and the second transistor P2, and outputting the first zero temperature coefficient current to the third transistor N1 and the fourth transistor N2, the first transistor P1, the second transistor P2, the third transistor N1 and the fourth transistor N2 are in the on state. According to the first positive temperature coefficient current, the first zero temperature coefficient current and the inherent coefficients of the first transistor P1, the second transistor P2, the third transistor N1 and the fourth transistor N2, the size of the current IP2 flowing through the second transistor P2 and the size of the current IN2 flowing through the fourth transistor N2 can be calculated.

[0152] As shown in FIG. 6, the size of the current IP2 flowing through the second transistor P2 is positively correlated with the temperature, and IP2 increases with the increase of the temperature in the corresponding target temperature interval. The size of the current IN2 flowing through the fourth transistor N2 is irrelevant to the temperature, and the size of IN2 does not change with the change of the temperature.

[0153] Further, based on IN2>IP2 in the first temperature interval (t0-t1], the fourth transistor N2 is in the saturation state, and the compensation current output by the first temperature compensation module 10 to the compensation node D can be regarded as the current IN1 flowing through the third transistor N1. According to Kirchhoff's law, IN1=IN2-IP2|, that is, in the first temperature interval (t0-t1], the compensation current output by the first temperature compensation module 10 to the compensation node D is the difference between the current IN2 flowing through the fourth transistor N2 and the absolute value |IP2| of the current flowing through the second transistor P2.

[0154] In the first temperature interval (t0-t1], with the increase of the temperature, IP2 increases and IN2 remains unchanged, so IN1 decreases, that is, in the first temperature interval (t0-t1], with the increase of the temperature, the compensation current output by the first temperature compensation module 10 to the compensation node D gradually decreases, that is, the compensation current (IN1) output by the first temperature compensation module 10 to the compensation node D is negatively correlated with the temperature.

[0155] At the same time, in the first temperature interval (t0-t1], according to the second positive temperature coefficient current, the second zero temperature coefficient current and the inherent coefficients of the fifth transistor P3, the sixth transistor P4, the seventh transistor N3 and the eighth transistor N4, the current IP4 flowing through the sixth transistor P4 and the current IN4 flowing through the eighth transistor N4 can be calculated.

[0156] Among them, the size of the current IN4 flowing through the eighth transistor N4 is positively correlated with the temperature, and IN4 increases with the increase of the temperature in the corresponding target temperature interval. The size of the current IP4 flowing through the sixth transistor P4 is irrelevant to the temperature, and the size of IP4 does not change with the change of the temperature.

[0157] In the first temperature interval (t0-t1], IP4≥IN4, the eighth transistor N4 is in saturation state, the seventh transistor P3 and the eighth transistor P4 enter the linear region, IP4 is configured to be equal to IN4, so that the current IN3 flowing through the seventh transistor N3 is equal to zero, that is, no current flows through the seventh transistor N3 to the compensation node, and therefore the second temperature compensation module 20 outputs a compensation signal (compensation current) of zero to the compensation node D in the first temperature interval.

[0158] Similarly, as shown in FIG. 6, in the second temperature interval (t1-t2), the current IP2 flowing through the second transistor P2 is greater than or equal to the current IN2 flowing through the fourth transistor N2, and since the size of IP2 is positively correlated with temperature and the size of IN2 is independent of temperature.

[0159] According to IP2≥IN2, the fourth transistor N2 is in saturation state, IP2 is configured to be equal to IN2, so that the current IN1 flowing through the third transistor N1 is equal to zero, at this time, the third transistor N1 can be regarded as being disconnected, that is, no current flows through the third transistor N1 to the compensation node, and therefore the first temperature compensation module 20 outputs a compensation signal (compensation current) of zero to the compensation node D in the second temperature interval.

[0160] At the same time, in the second temperature interval (t1-t2), the current IP4 flowing through the sixth transistor P4 is greater than or equal to the current IN4 flowing through the eighth transistor N4, and according to IP4≥IN4, the seventh transistor P3 and the eighth transistor P4 enter the linear region, the eighth transistor N4 is in saturation state, IP4 is configured to be equal to IN4, so that the current IN3 flowing through the seventh transistor N3 is equal to zero, at this time, the seventh transistor N3 can be regarded as being disconnected, that is, no current flows through the seventh transistor N3 to the compensation node, and therefore the second temperature compensation module 20 outputs a compensation signal (compensation current) of zero to the compensation node D in the second temperature interval.

[0161] Similarly, as shown in FIG. 6, in the third temperature interval [t2-t3), the current IP2 flowing through the second transistor P2 is greater than or equal to the current IN2 flowing through the fourth transistor N2, and since the size of IP2 is positively correlated with temperature and the size of IN2 is independent of temperature.

[0162] According to IP2≥IN2, the fourth transistor N2 is in saturation state, the first transistor P1 and the second transistor P2 enter the linear region, IP2 is configured to be equal to IN2, so that the current IN1 flowing through the third transistor N1 is equal to zero, at this time, the third transistor N1 can be regarded as being disconnected, that is, no current flows through the third transistor N1 to the compensation node, and therefore the first temperature compensation module 20 outputs a compensation signal (compensation current) of zero to the compensation node D in the third temperature interval.

[0163] Meanwhile, in the third temperature interval [t2-t3), the current IP4 flowing through the sixth transistor P4 is less than the current IN4 flowing through the eighth transistor N4, and according to IN4≥IP4, the eighth transistor N4 is in a saturated state, and the compensation current output by the second temperature compensation module 20 to the compensation node D can be regarded as the current IN3 flowing through the seventh transistor N3. According to Kirchhoff's law, IN3=IN4-IP4, that is, in the third temperature interval [t2-t3), the compensation current output by the second temperature compensation module 10 to the compensation node D is the difference between the current IN4 flowing through the eighth transistor N4 and the absolute value of the current IP4 flowing through the sixth transistor P4.

[0164] In the third temperature interval [t2-t3), as the temperature rises, IP4 remains unchanged and IN4 increases as the temperature rises, and IN3 increases, that is, in the third temperature interval [t2-t3), as the temperature rises, the compensation current output by the second temperature compensation module 20 to the compensation node D gradually increases, that is, the compensation current (IN3) output by the second temperature compensation module 20 to the compensation node D is positively correlated with the temperature.

[0165] Please refer to FIG. 7, generally in the third temperature interval, only the second temperature compensation module 20 needs to output the second compensation signal to the compensation node, at this time, the compensation signal is positively correlated with the temperature, and the second correlation relationship is shown as a straight line X1.

[0166] However, in the third temperature interval, when the threshold voltage VTH of the third transistor N1 of the first temperature compensation module 10 is less than the preset value, for example, in the third temperature interval, the threshold voltage VTH of the third transistor N1 is less than the threshold voltage VTH of the third transistor N1 in the first temperature interval, at this time, it will make the third transistor N1 which should be in a saturated state conduct, so that in the third temperature interval, part of the compensation current is output to the compensation node through the third transistor N1, at this time, since the first temperature compensation module 10 outputs the compensation signal to the compensation node, the second correlation relationship between the compensation signal and the temperature becomes as shown in the curve X2, thereby affecting the accuracy of the compensation signal output by the temperature compensation circuit in the third temperature interval.

[0167] In the present application, the first temperature compensation module 10 and the second temperature compensation module 20 are connected through the switch module, and the switch module is turned on to connect the connection path between the first temperature compensation module 10 and the second temperature compensation module 20 in the first temperature interval, and at least in the third temperature interval, the connection path between the first temperature compensation module 10 and the second temperature compensation module 20 is disconnected by controlling the switch module 30, so that the third transistor N1 cannot be turned on, and the current passing through the third transistor N1 cannot be output to the compensation node, thereby ensuring that only the second temperature compensation module 20 provides the compensation signal to the compensation node in the third temperature interval, so as to effectively avoid the first temperature compensation module 10 outputting the compensation signal to the compensation node in the third temperature interval, affecting the accuracy of the compensation signal output by the temperature compensation circuit 110 to the compensation node in the third temperature interval, thereby improving the accuracy and reliability of the compensation signal output by the temperature compensation circuit 110 to the compensation node, so as to realize higher-precision temperature compensation.

[0168] In some embodiments, the switch module 30 is also used to disconnect the connection path between the first temperature compensation module 10 and the second temperature compensation module 10 in the second temperature interval. For example, the switch module 30 has an on state and an off state, and can be switched between the on state and the off state.

[0169] When the temperature is in the first temperature interval, the switch module 30 is controlled to switch to the on state, so that the first temperature compensation module 10 is connected with the second temperature compensation module 20, and then the compensation current output by the first temperature compensation module 10 can flow to the compensation node through the second temperature compensation module 20.

[0170] When the temperature is in at least one of the second temperature interval and the third temperature interval, the switch module 30 is controlled to switch to the off state, so that the first temperature compensation module 10 is disconnected with the second temperature compensation module 20, and then in the corresponding second temperature interval and third temperature interval, the first temperature compensation module 10 will not affect the size of the compensation signal output by the second temperature compensation module 20 to the compensation node, thereby realizing higher-precision temperature compensation.

[0171] In some embodiments, the switch module 30 includes a switch tube K1, a first end of the switch tube K1 is connected to the first temperature compensation module 10, a second end of the switch tube K1 is connected to the second temperature compensation module 20, and a controlled end of the switch tube K1 is used to receive a control signal to turn on the connection path between the first temperature compensation module 10 and the second temperature compensation module 20 in the first temperature interval, and to disconnect the connection path between the first temperature compensation module 10 and the second temperature compensation module 20 in the third temperature interval.

[0172] As shown in FIG. 5, the first end of the switch tube K1 is connected to the first zero-temperature compensation unit of the first temperature compensation module 10, and the second end of the switch tube K1 is connected to the second positive-temperature compensation unit of the second temperature compensation module 20.

[0173] Optionally, the switch tube K1 is a MOS tube, the first end of the MOS tube is a source stage of the MOS tube, and the second end of the MOS tube is a drain of the MOS tube. Since the MOS tube has a high input impedance, the MOS tube will not cause a voltage drop on the excitation signal, and thus a smaller driving control signal is required.

[0174] Referring to FIG. 8, in some embodiments, the temperature compensation circuit 110 further includes a switch control module 60 connected to the switch module 30 and configured to control the switch module 30 to be closed in the first temperature interval to turn on the connection path between the first temperature compensation module 10 and the second temperature compensation module 20, and to be opened in the third temperature interval to turn off the connection path between the first temperature compensation module 10 and the second temperature compensation module 20.

[0175] For example, the switch control module 60 includes a comparator 601, a first control tube 602, and a second control tube 603. The first end of the first control tube 602 is connected to the first end of the comparator 601 and configured to receive a first signal Ibias1, the second end of the first control tube 602 is grounded, the controlled end of the first control tube 602 is connected to the first end of the second control tube 603, and the first end of the second control tube 603 is configured to receive a second signal Ibias2, the second end of the second control tube 603 is grounded, and the controlled end of the second control tube 603 is grounded. The second end of the comparator 601 is configured to receive a preset electrical signal, such as a voltage signal VBG.

[0176] Optionally, the first end of the comparator 601 is a non-inverting input terminal, and the second end of the comparator 601 is an inverting input terminal. Optionally, the first control tube 602 and the second control tube 603 are the same type of switch tube, such as both the first control tube 602 and the second control tube 603 being PNP tubes or NPN tubes.

[0177] For example, the first control tube 602 and the second control tube 603 are both PNP tubes.

[0178] The first signal Ibias1 and the second signal Ibias2 are zero-temperature coefficient bias currents, and the first control tube 602 and the second control tube 603 form a compound PNP tube, in which the second control tube 603 is in an emitter follower connection.

[0179] The controlled end of the first control tube 602 is connected with node 1 of the first end of the second control tube 603, and the voltage at node 1 is VBE1; the first end of the first control tube 602 is connected with node 2 of the first end of the comparator 601, and the voltage at node 2 is VBE2; VBE1 and VBE2 are both negative temperature coefficient voltages, and at normal temperature (for example, 25°C), generally, VBE1 ≈ 0.7V, and VBE2 ≈ 2*VBE1 = 1.4V.

[0180] When the ambient temperature is in the first temperature interval, for example, the temperature T is less than t1, VBE2 is greater than VBG, after passing through the comparator 601, the output end of the comparator 601 outputs a high level, the switch control module 60 controls the switch tube K1 of the switch module 30 to be turned on, so that the switch module 30 is in a conduction state.

[0181] When the ambient temperature is in the second temperature interval and the third temperature interval, that is, when the temperature is greater than the threshold temperature, for example, the threshold temperature is t1, the output end of the comparator 601 outputs a low level, and the control switch tube K1 is turned off, so that the switch module 30 is in an off state.

[0182] It can be understood that the specific implementation of the switch control module 60 can also have various circuit structures, as long as the switch control module 60 can output corresponding high levels or low levels according to the control signal output, so that the control of the switch tube K1 of the switch module 30 to be turned on and turned off can be realized.

[0183] Please refer to FIGS. 9-10, in some embodiments, the temperature compensation circuit 110 at least includes two first temperature compensation modules 10, and at least part of the first temperature compensation modules 10 includes a first switch, which is used to adjust the number of the first temperature compensation modules 10 connected in the temperature compensation circuit 110.

[0184] When the number of the first temperature compensation modules 10 connected in the temperature compensation circuit 110 increases, the compensation signal value corresponding to the first compensation signal increases; when the number of the first temperature compensation modules 10 connected in the temperature compensation circuit 110 decreases, the compensation signal value corresponding to the first compensation signal decreases.

[0185] Optionally, the temperature compensation circuit 110 at least includes two second temperature compensation modules 20, and at least part of the second temperature compensation modules 20 includes a second switch, which is used to adjust the number of the second temperature compensation modules 20 connected in the temperature compensation circuit 110.

[0186] When the number of the second temperature compensation modules 20 connected in the temperature compensation circuit 110 increases, the compensation signal value corresponding to the second compensation signal increases; when the number of the second temperature compensation modules 20 connected in the temperature compensation circuit 110 decreases, the compensation signal value corresponding to the second compensation signal decreases.

[0187] As shown in Fig. 9, for example, the temperature compensation circuit 110 comprises two first temperature compensation modules 10 and two second temperature compensation modules 20, wherein each first temperature compensation module 10 comprises a corresponding first switch, and each second temperature compensation module 20 comprises a corresponding second switch. For the sake of distinction, one first temperature compensation module 10 is marked as 10a, the first switch in the first temperature compensation module 10a is K2, another first temperature compensation module 10 is marked as 10b, the first switch in the first temperature compensation module 10b is K3, one second temperature compensation module 20 is marked as 20a, the second switch in the second temperature compensation module 20a is K4, and another second temperature compensation module 10 is marked as 20b, the second switch in the second temperature compensation module 20b is K5.

[0188] For example, by closing the corresponding first switch K2, the first temperature compensation module 10a is connected to the first positive temperature coefficient power supply Al and the first zero temperature coefficient power supply Bl. And / or, by closing the corresponding first switch K2, the first temperature compensation module 10b is connected to the first positive temperature coefficient power supply Al and the first zero temperature coefficient power supply Bl.

[0189] Similarly, by opening the corresponding first switch K2, the first temperature compensation module 10a is disconnected from the first positive temperature coefficient power supply Al and the first zero temperature coefficient power supply Bl. By opening the corresponding first switch K3, the first temperature compensation module 10b is disconnected from the first positive temperature coefficient power supply Al and the first zero temperature coefficient power supply Bl.

[0190] For example, by closing the corresponding second switch K4, the second temperature compensation module 20a is connected to the second positive temperature coefficient power supply A2 and the second zero temperature coefficient power supply B2, and / or, by closing the corresponding second switch K5, the second temperature compensation module 20b is connected to the second positive temperature coefficient power supply A2 and the second zero temperature coefficient power supply B2.

[0191] Similarly, by opening the corresponding second switch K4, the second temperature compensation module 20a is disconnected from the second positive temperature coefficient power supply A2 and the second zero temperature coefficient power supply B2, and / or, by opening the corresponding second switch K5, the second temperature compensation module 20b is disconnected from the second positive temperature coefficient power supply A2 and the second zero temperature coefficient power supply B2.

[0192] Based on each temperature compensation circuit can output corresponding compensation signal to the compensation node in the corresponding target temperature interval, therefore, by changing the number of first temperature compensation module 10 in the temperature compensation circuit 110 to change the size of the first compensation signal output by the temperature compensation circuit 110 to the compensation node, by changing the number of second temperature compensation module 20 in the temperature compensation circuit 110 to change the size of the second compensation signal output by the temperature compensation circuit 110 to the compensation node.

[0193] And, the number of first temperature compensation module 10 in the temperature compensation circuit 110 is positively correlated with the size of the first compensation signal output by the temperature compensation circuit 110 to the compensation node. The number of second temperature compensation module 10 in the temperature compensation circuit 110 is positively correlated with the size of the second compensation signal output by the temperature compensation circuit 110 to the compensation node.

[0194] In some embodiments, increasing the number of first temperature compensation module 10 in the temperature compensation circuit 110, the change amount of the first compensation signal in the third correlation relationship in unit time increases; reducing the number of first temperature compensation module 10 in the temperature compensation circuit 110, the change amount of the first compensation signal in the third correlation relationship in unit time decreases.

[0195] Increasing the number of second temperature compensation module 20 in the temperature compensation circuit 110, the change amount of the second compensation signal in the second correlation relationship in unit time increases, reducing the number of second temperature compensation module 20 in the temperature compensation circuit 110, the change amount of the second compensation signal in the second correlation relationship in unit time decreases.

[0196] As shown in FIG. 10, when only the first temperature compensation module 10a is accessed in the temperature compensation circuit 110, the corresponding third correlation relationship is the line segment corresponding to K2, when only the first temperature compensation module 10b is accessed in the temperature compensation circuit 110, the corresponding third correlation relationship is the line segment corresponding to K3, when the first temperature compensation module 10a and the first temperature compensation module 10b are accessed in the temperature compensation circuit 110, the corresponding third correlation relationship is the line segment corresponding to K2+K3. Among them, the change amount of the first compensation signal in unit time in the line segment corresponding to K2+K3 is greater than the change amount of the first compensation signal in unit time in the line segment corresponding to K2 or K3.

[0197] When only the second temperature compensation module 20a is connected in the temperature compensation circuit 110, the corresponding second correlation is a line segment corresponding to K4; when only the second temperature compensation module 20b is connected in the temperature compensation circuit 110, the corresponding second correlation is a line segment corresponding to K5; and when the second temperature compensation module 20a and the second temperature compensation module 20b are simultaneously connected in the temperature compensation circuit 110, the corresponding second correlation is a line segment corresponding to K4+K5. The change amount of the second compensation signal in the line segment corresponding to K4+K5 in a unit time is greater than the change amount of the second compensation signal in the line segment corresponding to K4 or K5 in a unit time.

[0198] Referring to FIG. 11, FIG. 11 is a circuit structure schematic diagram of a second embodiment of the temperature compensation circuit provided by the present application.

[0199] As shown in FIG. 11, different from the first embodiment, the temperature compensation circuit 110 does not have the switch module 30, and the first temperature compensation module 10 is connected with the second temperature compensation module 20. That is, the temperature compensation circuit 110 includes at least one first temperature compensation module 10, at least one second temperature compensation module 20, and the power supply module 40.

[0200] The first temperature compensation module 10 is connected with the second temperature compensation module 20, the first temperature compensation module 10 is configured to output a first compensation signal to the compensation node in a first temperature interval, and the first compensation signal has a third correlation with temperature. The second temperature compensation module 20 is configured to output a second compensation signal to the compensation node in a third temperature interval, and the second compensation signal has a fourth correlation with temperature. The compensation signals output by the first temperature compensation module 10 and the second temperature compensation module 20 in a second temperature interval are irrelevant to temperature, and the second temperature interval is between the first temperature interval and the third temperature interval. In the third correlation, the first compensation signal has a negative correlation with temperature, and in the fourth correlation, the second compensation signal has a positive correlation with temperature.

[0201] For example, the first temperature compensation module 10 is further configured to receive a first positive temperature coefficient current and a first zero temperature coefficient current, and the first positive temperature coefficient current and the first zero temperature coefficient current can enable the first temperature compensation module 10 to output the first compensation signal to the compensation node in the first temperature interval.

[0202] The second temperature compensation module 20 is further configured to receive a second positive temperature coefficient current and a second zero temperature coefficient current, and the second positive temperature coefficient current and the second zero temperature coefficient current can enable the second temperature compensation module 20 to output the second compensation signal to the compensation node in the third temperature interval.

[0203] Further, the first temperature compensation module 10 comprises a first positive temperature compensation unit 101 and a first zero temperature compensation unit 102 connected with the first positive temperature compensation unit 101, the first positive temperature compensation unit 101 is configured to receive a first positive temperature coefficient current, and the first zero temperature compensation unit 102 is configured to receive a first zero temperature coefficient current; in the first temperature interval, after receiving the first positive temperature coefficient current and the first zero temperature coefficient current, the first temperature compensation module 10 outputs a first compensation signal to the compensation node.

[0204] The second temperature compensation module 20 comprises a second positive temperature compensation unit 201 and a second zero temperature compensation unit 202 connected with the second positive temperature compensation unit 201, the second positive temperature compensation unit 201 is configured to receive a second positive temperature coefficient current, and the second zero temperature compensation unit 202 is configured to receive a second zero temperature coefficient current; in the third temperature interval, after receiving the second positive temperature coefficient current and the second zero temperature coefficient current, the second temperature compensation module 20 outputs a second compensation signal to the compensation node.

[0205] As shown in FIG. 11, the second embodiment of the temperature compensation circuit is different from the first embodiment of the corresponding temperature compensation circuit in FIG. 5 in that, in the embodiment in FIG. 5, the first temperature compensation module 10 and the second temperature compensation module 20 are connected through the switch module 30, and in the present embodiment, there is no switch module 30, and the first temperature compensation module 10 is connected to the second temperature compensation module 20.

[0206] The first positive temperature compensation unit 101 comprises a first transistor P1 and a second transistor P2, and the first zero temperature compensation unit 102 comprises a third transistor N1 and a fourth transistor N2, wherein the controlled end of the first transistor P1 and the second transistor P2 is configured to be connected with a first positive temperature coefficient power supply, and the first positive temperature coefficient power supply is configured to output a first positive temperature coefficient current; the controlled end of the third transistor N1 and the fourth transistor N2 is configured to be connected with a first zero temperature coefficient power supply, and the first zero temperature coefficient power supply is configured to output a first zero temperature coefficient current.

[0207] Further, the first end of the first transistor P1 is configured to be connected with a power supply, the second end of the first transistor P1 is connected with the first end of the second transistor P2, the second end of the second transistor P2 is connected with the second end of the third transistor N1 and the first end of the fourth transistor N2, the second end of the fourth transistor N2 is grounded, and the first end of the third transistor N1 is connected to a branch where the compensation node is located.

[0208] In the first temperature interval, the first transistor P1, the second transistor P2, the third transistor N1 and the fourth transistor N2 are in the on state, and the first temperature compensation module 10 outputs the first compensation signal to the compensation node through the third transistor N1; in the second temperature interval and the third temperature interval, the third transistor N1 is in the off state.

[0209] The second positive temperature compensation unit 201 comprises a fifth transistor P3 and a sixth transistor P4, and the second zero temperature compensation unit 202 comprises a seventh transistor N3 and an eighth transistor N4, wherein the controlled ends of the fifth transistor P3 and the sixth transistor P4 are connected with a second zero temperature coefficient power supply, and the second zero temperature coefficient power supply is configured to output a second zero temperature coefficient current; the controlled ends of the seventh transistor N3 and the eighth transistor N4 are connected with a second positive temperature coefficient power supply, and the second positive temperature coefficient power supply is configured to output a second positive temperature coefficient current.

[0210] The first end of the seventh transistor N3 is connected with a power supply, the second end of the seventh transistor N3 is connected with the first end of the eighth transistor N4, the second end of the eighth transistor N4 is connected with the second end of the fifth transistor P3 and the first end of the sixth transistor P4, the second end of the sixth transistor P4 is grounded, and the first end of the fifth transistor P3 is connected with a branch where the compensation point is located.

[0211] In the third temperature interval, the fifth transistor P3, the sixth transistor P4, the seventh transistor N3 and the eighth transistor N4 are in the conducting state, and the second temperature compensation module 20 outputs the second compensation signal to the compensation node through the seventh transistor N3. In the first temperature interval and the second temperature interval, the seventh transistor N3 is in the off state.

[0212] In the second embodiment, the functions and working principles of the same circuit structures in the temperature compensation circuit are the same as those of the temperature compensation circuit in the first embodiment, which will not be described herein.

[0213] Please refer to FIG. 12, which is a specific circuit structure schematic diagram of a third implementation of the temperature compensation circuit provided by the embodiments of the present application.

[0214] As shown in FIG. 12, the temperature compensation circuit 110 comprises at least one first temperature compensation module 10, at least one second temperature compensation module 20 and a power supply module 40.

[0215] The first temperature compensation module 10 is connected with the second temperature compensation module 20, the first temperature compensation module 10 is configured to output a first compensation signal to a compensation node in a first temperature interval, and the first compensation signal has a third correlation with temperature. The second temperature compensation module 20 is configured to output a second compensation signal to the compensation node in a third temperature interval, and the second compensation signal has a fourth correlation with temperature. The compensation signals output by the first temperature compensation module 10 and the second temperature compensation module 20 in a second temperature interval are irrelevant to temperature, and the second temperature interval is between the first temperature interval and the third temperature interval. In the third correlation, the first compensation signal has a negative correlation with temperature, and in the fourth correlation, the second compensation signal has a positive correlation with temperature.

[0216] Exemplarily, the first temperature compensation module 10 is further configured to receive a first positive temperature coefficient current and a first zero temperature coefficient current, and the first positive temperature coefficient current and the first zero temperature coefficient current can enable the first temperature compensation module 10 to output the first compensation signal to the compensation node within the first temperature interval.

[0217] The second temperature compensation module 20 is further configured to receive a second positive temperature coefficient current and a second zero temperature coefficient current, and the second positive temperature coefficient current and the second zero temperature coefficient current can enable the second temperature compensation module 20 to output the second compensation signal to the compensation node within the third temperature interval.

[0218] Further, the first temperature compensation module 10 comprises a first positive temperature compensation unit 101 and a first zero temperature compensation unit 102 connected with the first positive temperature compensation unit 101, the first positive temperature compensation unit 101 is configured to receive the first positive temperature coefficient current, and the first zero temperature compensation unit 102 is configured to receive the first zero temperature coefficient current; within the first temperature interval, after receiving the first positive temperature coefficient current and the first zero temperature coefficient current, the first temperature compensation module 10 outputs the first compensation signal to the compensation node.

[0219] The second temperature compensation module 20 comprises a second positive temperature compensation unit 201 and a second zero temperature compensation unit 202 connected with the second positive temperature compensation unit 201, the second positive temperature compensation unit 201 is configured to receive the second positive temperature coefficient current, and the second zero temperature compensation unit 202 is configured to receive the second zero temperature coefficient current; within the third temperature interval, after receiving the second positive temperature coefficient current and the second zero temperature coefficient current, the second temperature compensation module 20 outputs the second compensation signal to the compensation node.

[0220] In the third implementation of the temperature compensation circuit, the functions and working principles of the same circuit structure in the temperature compensation circuit correspond to the related description of the temperature compensation circuit in the second implementation, which is not repeated here.

[0221] The third embodiment is different from the second embodiment in that the first positive temperature compensation unit 101 comprises a first transistor N1 and a second transistor N2, the first zero temperature compensation unit 102 comprises a third transistor P1 and a fourth transistor P2, the controlled end of the first transistor N1 and the second transistor N2 is used to be connected with the first positive temperature coefficient power supply A1, the first positive temperature coefficient power supply A1 is used to output a first positive temperature coefficient current; the controlled end of the third transistor P1 and the fourth transistor P2 is used to be connected with the first zero temperature coefficient power supply B1, the first zero temperature coefficient power supply B1 is used to output a first zero temperature coefficient current. In addition, the first end of the third transistor P1 is used to be connected with a power supply VDD, the second end of the third transistor P1 and the first end of the fourth transistor P2 and the first end of the first transistor N1 are connected, the second end of the fourth transistor P2 is connected to a branch where a compensation point is located; the second end of the first transistor N1 is connected to the first end of the second transistor N2, and the second end of the second transistor N2 is grounded.

[0222] The second positive temperature compensation unit 201 comprises a fifth transistor P3 and a sixth transistor P4, the second zero temperature compensation unit 202 comprises a seventh transistor N3 and an eighth transistor N4, the controlled end of the fifth transistor P3 and the sixth transistor P4 is used to be connected with the second positive temperature coefficient power supply A2, the second positive temperature coefficient power supply A2 is used to output a second positive temperature coefficient current; the controlled end of the seventh transistor N3 and the eighth transistor N4 is used to be connected with the second zero temperature coefficient power supply B2, the second zero temperature coefficient power supply B2 is used to output a second zero temperature coefficient current.

[0223] In addition, the first end of the fifth transistor P3 is used to be connected with the power supply VDD, the second end of the fifth transistor P3 and the first end of the sixth transistor P4 and the first end of the seventh transistor N3 are connected, the second end of the sixth transistor P4 is connected to a branch where a compensation point is located; the second end of the seventh transistor N3 is connected to the first end of the eighth transistor N4, and the second end of the eighth transistor N4 is grounded.

[0224] As shown in FIG. 13, after the first positive temperature compensation unit 101 receives the first positive temperature coefficient current and the first zero temperature compensation unit 102 receives the first zero temperature coefficient current, the current flowing through the first transistor N1 is IN1, the size of IN1 is positively correlated with temperature, and the current flowing through the third transistor P1 is IP1, the size of IP1 is not correlated with temperature.

[0225] After the second positive temperature compensation unit 201 receives the second positive temperature coefficient current and the second zero temperature compensation unit 202 receives the second zero temperature coefficient current, the current flowing through the fifth transistor P3 is IP3, the size of IP3 is positively correlated with temperature, and the current flowing through the seventh transistor N3 is IN3, the size of IN3 is not correlated with temperature.

[0226] In the first temperature interval (t0-t1], IP1>IN1, the first transistor N1, the second transistor N2, the third transistor P1 and the fourth transistor P2 are in the on state, the current output by the first positive temperature compensation module 10 to the compensation node through the fourth transistor P2 is IOUT, IOUT=|IP2|=|IP1|-IN1, |IP1| does not change with temperature, IN1 increases with the increase of temperature, so IOUT decreases with the increase of temperature, that is, IOUT is negatively correlated with temperature.

[0227] At this time, the voltage of the compensation node is VOUT, VOUT=VBG+IOUT*R, VOUT decreases with the increase of temperature, and VOUT is a negative temperature coefficient voltage.

[0228] In the first temperature interval (t0-t1], IN3≥IP3, the sixth transistor P4 is in the saturation state, the seventh transistor N3 and the eighth transistor N enter the linear region, so that the current IP4 flowing through the sixth transistor P4 is equal to zero, that is, no current passes through the sixth transistor P4 to output to the compensation node, which can be regarded as the sixth transistor P4 being in the off state, so the compensation signal (compensation current) output by the second temperature compensation module 20 to the compensation node D in the first temperature interval is zero.

[0229] Similarly, in the second temperature interval (t1-t2), IN3≥IP3, the sixth transistor P4 is in the saturation state, so that the current IP4 flowing through the sixth transistor P4 is equal to zero, that is, no current passes through the sixth transistor P4 to output to the compensation node, which can be regarded as the sixth transistor P4 being in the off state, so the compensation signal (compensation current) output by the second temperature compensation module 20 to the compensation node D in the second temperature interval is zero.

[0230] In the second temperature interval, IP1≤IN1, the fourth transistor P2 is in the off state, so that the current IP2 of the fourth transistor P2 is equal to zero, that is, no current passes through the fourth transistor P2 to output to the compensation node, which can be regarded as the fourth transistor P2 being in the off state, so the compensation signal (compensation current) output by the first temperature compensation module 10 to the compensation node D in the second temperature interval is zero.

[0231] Similarly, in the third temperature interval [t2-t3), IP1<IN1, the fourth transistor P2 is in the off state, so that the current IP2 of the fourth transistor P2 is equal to zero, that is, no current passes through the fourth transistor P2 to output to the compensation node, which can be regarded as the fourth transistor P2 being in the off state, so the compensation signal (compensation current) output by the first temperature compensation module 10 to the compensation node D in the third temperature interval is zero.

[0232] In the third temperature interval, IN3< IP3, the current |IP3| flowing through P3 is greater than the current IN3 flowing through N3, the fifth transistor P3, the sixth transistor P4, the seventh transistor N3 and the eighth transistor N4 are in the on state, the second positive temperature compensation module 20 outputs a current IOUT to the compensation node through the sixth transistor P4, IOUT = |IP4| = |IP3| - IN3, |IP3| increases with the increase of temperature, IN3 does not change with temperature, so IOUT increases with the increase of temperature.

[0233] At this time, the voltage of the compensation node is VOUT, VOUT = VBG + IOUT * R, VOUT increases with the increase of temperature, and VOUT is a positive temperature coefficient voltage.

[0234] In some embodiments, the voltage at the compensation node D can be adjusted by adjusting the resistance value of the voltage dividing unit 402 in the power supply module 40. For example, an adjustable resistor is arranged in the voltage dividing unit 402, and the voltage at the compensation node D is adjusted by adjusting the resistance value of the adjustable resistor. Alternatively, the voltage dividing unit 402 is provided with switches and resistors, and the number of resistors connected in the voltage dividing unit 402 is controlled by the opening or closing of the switches, so that the resistance value of the voltage dividing unit 402 is adjustable.

[0235] Referring to FIG. 14, in some embodiments, the clamping circuit 120 includes a clamping branch 122 and a following branch 123. The clamping branch 122 is connected to the branch where the compensation node of the temperature compensation circuit 110 is located, and is configured to generate a corresponding initial clamping signal based on the compensation signal of the compensation node.

[0236] The output branch of the following branch 123 is connected to the bias circuit 200, and the following branch 123 is configured to cause the clamping value on the output branch of the following branch 123 to have a first correlation with temperature in a first temperature interval and a second correlation with temperature in a third temperature interval based on the initial clamping signal, wherein the output branch of the following branch 123 is the same branch as the output branch of the protection circuit 100.

[0237] For example, the clamping circuit 120 generates a corresponding first initial clamping signal based on the first compensation signal output by the temperature compensation circuit to the compensation node, and generates a corresponding second initial clamping signal based on the second compensation signal output by the temperature compensation circuit to the compensation node.

[0238] In some embodiments, the first initial clamping signal has the same correlation with temperature as the clamping value on the output branch of the clamping circuit 120 in the first temperature interval, and the second initial clamping signal has the same correlation with temperature as the clamping value on the output branch of the clamping circuit 120 in the third temperature interval.

[0239] The follow-up branch 123 causes the clamping value of the clamping signal on the output branch of the follow-up branch 123 to have a first correlation with the temperature in the first temperature range based on the first initial clamping signal, and causes the clamping value of the clamping signal on the output branch of the follow-up branch 123 to have a second correlation with the temperature in the third temperature range based on the second initial clamping signal.

[0240] The first correlation and the second correlation are different, and in the first correlation, the clamping value on the output branch of the follow-up branch 123 is positively correlated with the temperature, and in the second correlation, the clamping value on the output branch of the follow-up branch 123 is negatively correlated with the temperature, as shown in FIG. 6.

[0241] Alternatively, in the first correlation, the clamping value on the output branch of the protection circuit 100 is negatively correlated with the temperature, and in the second correlation, the clamping value on the output branch of the protection circuit is positively correlated with the temperature, as shown in FIG. 13.

[0242] As shown in FIG. 14, in some embodiments, the clamping branch 122 includes an operational amplifier 1221, a first switch tube 1222, and a second voltage dividing unit 1223. The first input terminal of the operational amplifier 1221 is connected to the compensation node of the temperature compensation circuit 110 or a branch where the compensation node of the temperature compensation circuit 110 is located, the output terminal of the operational amplifier 1221 is connected to the controlled terminal of the first switch tube 1222 and the input terminal of the follow-up branch 123, the first terminal of the first switch tube 1222 is used to receive a first preset voltage, the second terminal of the first switch tube 1222 is connected to the second input terminal of the operational amplifier 1221, and the second terminal of the first switch tube 1222 is connected to the first terminal of the second voltage dividing unit 1223, and the second terminal of the second voltage dividing unit 1223 is grounded. The voltage dividing unit 1223 is a resistor R2. Optionally, the resistance value of the resistor R2 is adjustable, that is, the resistor R2 is an adjustable resistor.

[0243] Optionally, the follow-up branch 123 includes a second switch tube 1231, the controlled terminal of the second switch tube 1231 is connected to the controlled terminal of the first switch tube 1222, the first terminal of the second switch tube 1231 is used to receive a second preset voltage, and the second terminal of the second switch tube 1231 is connected to the bias circuit 200, that is, the connection branch of the second switch tube 1231 connected to the bias circuit 200 is the output branch of the follow-up branch 123.

[0244] Optionally, the first switch tube 1222 and the second switch tube 131 are MOS tubes of the same type, and optionally, the first switch tube 1222 and the second switch tube 131 are both PNP tubes.

[0245] As shown in FIG. 14, according to the characteristics of the operational amplifier 1221, the feedback voltage V0 at the second input terminal of the operational amplifier 1221 is equal to the voltage at the first input terminal of the operational amplifier 1221, which is the voltage Vout corresponding to the compensation node, and the feedback voltage V0 at the second input terminal is equal to the voltage VCC at the first terminal of the voltage dividing unit 1223, so Vout = VCC.

[0246] The compensation current Iout output by the temperature compensation circuit 110 to the compensation node in the first temperature interval and the third temperature interval changes with the change of temperature. Therefore, the compensation voltage Vout at the compensation node in the first temperature interval and the third temperature interval also changes with the change of temperature, that is, the VCC voltage also changes with the change of the compensation voltage Vout.

[0247] The current I1 flowing through the first switch tube 1222 is I1 = VCC / R2, so I1 also changes with the change of the compensation voltage Vout. The first switch tube 1222 and the second switch tube 1231 constitute a mirror current source, and the branch connected to the bias circuit 200 is the output branch of the clamping circuit 120. At this time, the current Iclamp flowing through the second switch tube 1231 is the clamping signal output by the clamping circuit 120 through the output branch.

[0248] Wherein, Iclamp = K*I1, K is the current following coefficient of the following branch 123, and K is a constant, I1 = VCC / R2, Vout = VCC, Vout also changes with the change of temperature, so I1 changes with the change of the compensation voltage Vout, that is, the clamping signal Iclamp output by the output branch of the clamping circuit 120 also changes with the change of temperature, that is, the clamping value corresponding to the clamping signal also changes with the change of temperature.

[0249] For example, as shown in FIG. 6, in the first temperature interval, the compensation current Iout (the first compensation signal) output by the temperature compensation circuit 110 to the compensation node is negatively correlated with temperature, and the clamping circuit 120 generates a corresponding first initial clamping signal according to the compensation current Iout (the first compensation signal) output by the temperature compensation circuit to the compensation node, which is positively correlated with temperature, and the following branch 123 makes the clamping value of the clamping signal on the output branch of the following branch 123 positively correlated with temperature based on the first initial clamping signal.

[0250] In the third temperature range, the compensation current Iout (the second compensation signal) output by the temperature compensation circuit 110 to the compensation node is positively correlated with temperature, and the clamping circuit 120 generates a corresponding second initial clamping signal which is negatively correlated with temperature according to the compensation current Iout (the second compensation signal) output by the temperature compensation circuit to the compensation node, and the following branch 123 makes the clamping value of the clamping signal on the output branch of the following branch 123 negatively correlated with temperature based on the second initial clamping signal.

[0251] Alternatively, as shown in FIG. 13, in the first temperature range, the compensation current Iout (the first compensation signal) output by the temperature compensation circuit 110 to the compensation node is negatively correlated with temperature, and the clamping circuit 120 generates a corresponding first initial clamping signal which is negatively correlated with temperature according to the compensation current Iout (the first compensation signal) output by the temperature compensation circuit to the compensation node, and the following branch 123 makes the clamping value of the clamping signal on the output branch of the following branch 123 negatively correlated with temperature based on the first initial clamping signal.

[0252] In the third temperature range, the compensation current Iout (the second compensation signal) output by the temperature compensation circuit 110 to the compensation node is positively correlated with temperature, and the clamping circuit 120 generates a corresponding second initial clamping signal which is positively correlated with temperature according to the compensation current Iout (the second compensation signal) output by the temperature compensation circuit to the compensation node, and the following branch 123 makes the clamping value of the clamping signal on the output branch of the following branch 123 positively correlated with temperature based on the second initial clamping signal.

[0253] In some embodiments, unlike the foregoing embodiments, the power amplification circuit 300 and the bias circuit 200 of the radio frequency front-end module 1 are arranged on a first chip, the protection circuit 100 of the radio frequency front-end module 1 is arranged on a second chip, and the first chip and the second chip are arranged on a substrate. The first chip and the second chip can be arranged on the same surface of the substrate or different surfaces of the substrate, which is not limited here.

[0254] The first chip is provided with the power amplification circuit 300 and the bias circuit 200. The second chip is provided with the protection circuit 100. By arranging the power amplification circuit 300 and the bias circuit 200 on the same chip and arranging the protection circuit on another chip, in the case of failure of one of the chips, only the failed chip needs to be replaced, facilitating maintenance of the radio frequency front-end module.

[0255] That is, the radio frequency front-end module 1 comprises a substrate, a first chip and a second chip disposed on the substrate, wherein the first chip comprises a power amplification circuit 300 and a bias circuit 200 configured to provide a bias signal for the power amplification circuit 300. The second chip comprises a protection circuit 100 connected with the bias circuit 200, and the protection circuit 100 is configured to make the clamping value on the output branch connected with the bias circuit 200 have a first correlation with the temperature in the first temperature interval, and / or the protection circuit 100 is configured to make the clamping value on the output branch connected with the bias circuit 200 have a second correlation with the temperature in the third temperature interval.

[0256] Please refer to FIG. 15. In some embodiments, the size of the bias source signal received by the first end of the bias circuit 200 is related to the temperature, which is different from the foregoing embodiments.

[0257] As shown in FIG. 15, for example, the second end of the bias circuit 200 is configured to be connected with the protection circuit 100, the third end of the bias circuit 200 is configured to be connected with the power amplification circuit 300 and output a bias signal to the power amplification circuit, and the first end of the bias circuit 200 is configured to be connected with the bias control circuit 400, wherein the protection circuit 100 is configured to make the clamping value on the output branch connected with the bias circuit 200 have a first relationship with the temperature in the target temperature interval. The bias control circuit 400 is configured to make the bias source signal on the output branch of the bias circuit 200 and the bias control circuit 400 have a second relationship with the temperature in the target temperature interval; and the first relationship and the second relationship are different. The third end of the bias circuit 200 is configured to be connected with the power amplification circuit 300 and output a bias signal to the power amplification circuit 300.

[0258] Optionally, the target temperature interval at least comprises the first temperature interval and the third temperature interval, and the protection circuit 100 is configured to make the clamping value on the output branch of the bias circuit 200 and the protection circuit 100 have a first correlation with the temperature in the first temperature interval and a second correlation with the temperature in the third temperature interval.

[0259] The bias control circuit 400 is configured to make the bias source signal on the output branch of the bias circuit 200 and the bias control circuit 200 have a seventh correlation with the temperature in the first temperature interval and an eighth correlation with the temperature in the third temperature interval, wherein the seventh correlation and the eighth correlation can be the same or different in correlation with the temperature.

[0260] As shown in FIG. 16, the bias source signal is a bias current, and the seventh correlation and the eighth correlation are both positively correlated with temperature, that is, in the seventh correlation and the eighth correlation, the bias source signal on the output branch of the bias control circuit 400 is positively correlated with temperature, that is, in the first temperature interval and the third temperature interval, the higher the temperature, the greater the bias source signal on the output branch of the bias control circuit 400.

[0261] Optionally, in the second temperature interval, the bias source signal on the output branch of the bias control circuit 400 is irrelevant to temperature.

[0262] In some embodiments, unlike the foregoing embodiments, the radio frequency front-end module 1 at least includes the power amplification circuit 300 and the bias circuit 200 for providing a bias signal to the power amplification circuit 300. The power amplification circuit 300 and the bias circuit 200 for providing a bias signal to the power amplification circuit 300. The bias circuit 200 is connected with the protection circuit 100, and the protection circuit 100 is configured such that the clamping value on the output branch where the protection circuit 100 and the bias circuit 200 are connected is positively correlated with temperature in the first temperature interval, and the maximum value of the first temperature interval is less than the first temperature threshold. Alternatively, the protection circuit 100 is configured such that the clamping value on the output branch where the bias circuit 200 and the protection circuit 100 are connected is negatively correlated with temperature in the third temperature interval, and the minimum value of the third temperature interval is greater than the second temperature threshold.

[0263] In some embodiments, unlike the foregoing embodiments, the radio frequency front-end module 1 at least includes the power amplification circuit 300 and the bias circuit 200 for providing a bias signal to the power amplification circuit 300.

[0264] The second end of the bias circuit 200 is configured to be connected with the protection circuit 100, and the protection circuit 100 is configured such that the clamping value on the output branch where the protection circuit 100 and the bias circuit 200 are connected is in a first relationship with temperature in the target temperature interval. The first end of the bias circuit 200 is configured to be connected with the bias control circuit, and the bias control circuit is configured such that the bias source signal on the output branch where the bias circuit 200 and the bias control circuit are connected is in a second relationship with temperature in the target temperature interval; the first relationship and the second relationship are different. The third end of the bias circuit 200 is configured to be connected with the power amplification circuit 300 and output a bias signal to the power amplification circuit 300.

[0265] In some embodiments, different from the foregoing embodiments, the radio frequency front end module 1 at least includes the power amplification circuit 300 and the bias circuit 200 for providing a bias signal for the power amplification circuit 300. The maximum value of the bias signal output by the bias circuit 200 and the temperature in the first temperature interval are in a fifth correlation, the maximum value of the bias signal output by the bias circuit 200 and the temperature in the third temperature interval are in a sixth correlation, the fifth correlation and the sixth correlation are different, and the minimum value of the third temperature interval is greater than the maximum value of the first temperature interval.

[0266] Referring to FIG. 17, FIG. 17 is a circuit structure block diagram of a power amplifier provided by an embodiment of the present application.

[0267] As shown in FIG. 17, the power amplifier 1 includes the temperature compensation circuit 100, the bias circuit 200, and the power amplification circuit 300. The temperature compensation circuit 100 is configured to output a target compensation signal adapted to the temperature in a target temperature interval to a target object in the target temperature interval. The target object includes but is not limited to a target circuit and a target component, for example, the target object includes the bias circuit 200. The temperature compensation circuit 100 outputs the target compensation signal to a compensation node of the temperature compensation circuit 100 in the target temperature interval, and the bias circuit 200 is connected to the compensation node or a branch where the compensation node is located, so that the temperature compensation circuit 100 can output the corresponding target compensation signal to the bias circuit 200 through the compensation node in the target temperature interval.

[0268] The bias circuit 200 is connected to the temperature compensation circuit 100 and the power amplification circuit 300, and the bias circuit 200 is further configured to receive the target compensation signal output by the temperature compensation circuit 100 and output a corresponding bias signal. Optionally, the size of the bias signal output by the bias circuit 200 is related to the size of the target compensation signal output by the temperature compensation circuit 100, for example, the size of the bias signal output by the bias circuit 200 is positively correlated with the size of the target compensation signal output by the temperature compensation circuit 100, that is, the larger the target compensation signal output by the temperature compensation circuit 100, the larger the bias signal output by the bias circuit 200.

[0269] The power amplification circuit 300 is configured to receive the bias signal and a radio frequency input signal and output a radio frequency output signal. The amplification multiple of the power amplification circuit 300 to the radio frequency input signal is related to the size of the bias signal output by the bias circuit 200, for example, in the effective amplification range of the power amplification circuit 300, the amplification multiple of the power amplification circuit 300 to the radio frequency input signal is positively correlated with the size of the bias signal.

[0270] It can be understood that the compensation signal can be a compensation voltage or a compensation current, and the bias signal can be a bias voltage or a bias current, which is not limited here.

[0271] In some embodiments, the target temperature range includes at least a first temperature range and a third temperature range. The maximum value of the first temperature range is less than the minimum value of the third temperature range, and the temperature compensation circuit 100 outputs a first compensation signal to the compensation node in the first temperature range, the first compensation signal having a first correlation with temperature. The temperature compensation circuit 100 outputs a second compensation signal to the compensation node in the third temperature range, the second compensation signal having a second correlation with temperature, the second correlation being different from the first correlation.

[0272] Optionally, the second correlation is different from the first correlation, which can be that the magnitude of the first compensation signal is negatively correlated with temperature, i.e., the lower the temperature, the larger the first compensation signal output by the temperature compensation circuit 100 to the compensation node, and vice versa, the higher the temperature, the smaller the first compensation signal output by the temperature compensation circuit 100 to the compensation node. The magnitude of the second compensation signal is positively correlated with temperature, i.e., the lower the temperature, the smaller the second compensation signal output by the temperature compensation circuit 100 to the compensation node, and vice versa, the higher the temperature, the larger the second compensation signal output by the temperature compensation circuit 100 to the compensation node.

[0273] In some embodiments, the target temperature range further includes a second temperature range between the first temperature range and the third temperature range. The compensation signal output by the temperature compensation circuit 100 to the compensation node in the second temperature range is independent of temperature, e.g., the compensation signal output by the temperature compensation circuit 100 to the compensation node in the second temperature range is zero, and the temperature compensation circuit 100 does not output a compensation signal to the compensation node in the second temperature range.

[0274] For example, the minimum value of the first temperature range is t0, and the maximum value is t1. The minimum value of the third temperature range is t2, and the maximum value is t3, then t3>t2>t1>t0.

[0275] For example, the interval temperature value corresponding to the first temperature range is (t0-t1], the interval temperature value corresponding to the second temperature range is (t1-t2), and the interval temperature value corresponding to the third temperature range is [t2-t3). The values of t0, t1, t2, and t3 can be set as needed, and optionally, t1 can be set to any value between -40°C and 20°C, and t2 can be set to any value between 30°C and 125°C, e.g., t1 can be -5°C, 0°C, or 10°C, and t2 can be 35°C, 40°C, or 50°C. It can be understood that the values of t0, t1, t2, and t3 can also be set as needed.

[0276] Please refer to FIG. 18 for an example of the compensation signal output by the temperature compensation circuit 100 to the compensation node being a compensation current.

[0277] The temperature value corresponding to the first temperature interval is (t0-t1], at this time, the compensation current output by the temperature compensation circuit 100 to the compensation node is negatively related to the temperature, that is, in the first temperature interval, the higher the temperature value, the smaller the compensation current output by the temperature compensation circuit 100 to the compensation node.

[0278] The temperature value corresponding to the second temperature interval is (t1-t2), at this time, the compensation current output by the temperature compensation circuit 100 to the compensation node is irrelevant to the temperature, for example, in the second temperature interval, the temperature compensation circuit 100 does not output a compensation signal to the compensation node.

[0279] The temperature value corresponding to the third temperature interval is [t2-t3), at this time, the compensation current output by the temperature compensation circuit 100 to the compensation node is positively related to the temperature, that is, in the third temperature interval, the higher the temperature value, the larger the compensation current output by the temperature compensation circuit 100 to the compensation node.

[0280] Please refer to FIG. 19, in some embodiments, the temperature compensation circuit 100 is provided with a compensation node (such as the compensation node D) for connecting a target object, and the temperature compensation circuit 100 comprises at least one first temperature compensation module 10, at least one second temperature compensation module 20, a switch module 30 connecting the first temperature compensation module 10 and the second temperature compensation module 20, and a power supply module 40.

[0281] The first temperature compensation module 10 is used to output a first compensation signal to the compensation node in the first temperature interval, and the first compensation signal has a first correlation with the temperature. The second temperature compensation module 20 is used to output a second compensation signal to the compensation node in the third temperature interval, and the second compensation signal has a second correlation with the temperature.

[0282] The switch module 30 is used to at least turn on a connection path between the first temperature compensation module 10 and the second temperature compensation module 20 in the first temperature interval, and turn off the connection path between the first temperature compensation module 10 and the second temperature compensation module 20 in the third temperature interval.

[0283] The output end of the power supply module 40 is connected to the compensation node or a branch where the compensation node is located, and is used to provide a basic electrical signal to the compensation node, which can be a basic voltage or a basic current.

[0284] In some embodiments, the first temperature compensation module 10 and the second temperature compensation module 20 of the temperature compensation circuit 100 output a compensation signal irrelevant to the temperature in the second temperature interval, and the second temperature interval is located between the first temperature interval and the third temperature interval.

[0285] Optionally, the first temperature compensation module 10 and the second temperature compensation module 20 output a compensation signal of zero in the second temperature interval.

[0286] As shown in FIG. 19, the first temperature compensation module 10 is configured to receive a first positive temperature coefficient current and a first zero temperature coefficient current. The first positive temperature coefficient current and the first zero temperature coefficient current enable the first temperature compensation module 10 to output a first compensation signal to the compensation node in the first temperature interval. The second temperature compensation module 20 is configured to receive a second positive temperature coefficient current and a second zero temperature coefficient current. The second positive temperature coefficient current and the second zero temperature coefficient current enable the second temperature compensation module 20 to output a second compensation signal to the compensation node in the third temperature interval.

[0287] The first positive temperature coefficient current is a current output by a first positive temperature coefficient power source A1 connected to the first temperature compensation module 10. The first positive temperature coefficient power source A1 can be a positive temperature coefficient current source. The first zero temperature coefficient current is a current output by a first zero temperature coefficient power source B1 connected to the first temperature compensation module 10. The first zero temperature coefficient power source B1 can be a zero temperature coefficient current source. The magnitude of the first positive temperature coefficient current is positively correlated with temperature. The magnitude of the first zero temperature coefficient current is independent of temperature.

[0288] The second positive temperature coefficient current is a current output by a second positive temperature coefficient power source A2 connected to the second temperature compensation module 20. The second positive temperature coefficient power source A2 can be a positive temperature coefficient current source. The second zero temperature coefficient current is a current output by a second zero temperature coefficient power source B2 connected to the second temperature compensation module 20. The second zero temperature coefficient power source B2 can be a zero temperature coefficient current source. The magnitude of the second positive temperature coefficient current is positively correlated with temperature. The magnitude of the second zero temperature coefficient current is independent of temperature.

[0289] As shown in FIG. 19, the first positive temperature coefficient current output by the first positive temperature coefficient power source A1 and the first zero temperature coefficient current output by the first zero temperature coefficient power source B1 are controllable. The second positive temperature coefficient current output by the second positive temperature coefficient power source A2 and the second zero temperature coefficient current output by the second zero temperature coefficient power source B2 are controllable. It is only necessary to ensure that, in the first temperature interval, the first temperature compensation module 10, after receiving the first positive temperature coefficient current and the first zero temperature coefficient current, can output the first compensation signal to the compensation node. In the third temperature interval, the second temperature compensation module 20, after receiving the second positive temperature coefficient current and the second zero temperature coefficient current, can output the second compensation signal to the compensation node.

[0290] In the embodiment, the first positive temperature coefficient current and the second positive temperature coefficient current are positively correlated with temperature, and the first zero temperature coefficient current and the second zero temperature coefficient current are not correlated with temperature.

[0291] In the first temperature interval (t0-t1], the first temperature compensation module 10 outputs the first compensation signal to the compensation node after receiving the first positive temperature coefficient current and the first zero temperature coefficient current, and the second temperature compensation module 20 does not output the compensation signal to the compensation node after receiving the second positive temperature coefficient current and the second zero temperature coefficient current.

[0292] In the second temperature interval (t1-t2), the first temperature compensation module 10 does not output the compensation signal to the compensation node after receiving the first positive temperature coefficient current and the first zero temperature coefficient current, and the second temperature compensation module 20 does not output the compensation signal to the compensation node after receiving the second positive temperature coefficient current and the second zero temperature coefficient current.

[0293] In the third temperature interval [t2-t3), the second temperature compensation module 20 outputs the second compensation signal to the compensation node after receiving the second positive temperature coefficient current and the second zero temperature coefficient current. Optionally, in the third temperature interval [t2-t3), the first temperature compensation module 10 does not output the compensation signal to the compensation node after receiving the first positive temperature coefficient current and the first zero temperature coefficient current.

[0294] In some embodiments, the target temperature coefficient current corresponds to the current-temperature correlation characteristic of the second temperature interval, and the target temperature coefficient current includes the first positive temperature coefficient current, the first zero temperature coefficient current, the second positive temperature coefficient current, and the second zero temperature coefficient current.

[0295] Optionally, when the first positive temperature coefficient current is equal to the first zero temperature coefficient current, the corresponding temperature value is the minimum temperature value of the second temperature interval. When the second positive temperature coefficient current is equal to the second zero temperature coefficient current, the corresponding temperature value is the maximum temperature value of the second temperature interval.

[0296] When the first positive temperature coefficient current is equal to the first zero temperature coefficient current, the corresponding temperature value is the minimum temperature value t1 of the second temperature interval. When the second zero temperature coefficient current is equal to the second positive temperature coefficient current, the corresponding temperature value is the maximum temperature value t2 of the second temperature interval. In the above embodiment, it can be seen that the temperature compensation circuit 100 provided by the embodiment is used to provide a compensation signal to a target circuit (such as a bias circuit). The compensation signal output by the temperature compensation circuit to the target circuit can change with the change of temperature, and therefore, the electrical signal (such as a bias signal) output by the target circuit (such as a bias circuit) will change with the change of the compensation signal output by the temperature compensation circuit to the compensation node.

[0297] Therefore, in the scenario that the temperature compensation circuit is applied to the power amplifier, after the bias circuit is connected with the compensation node, the bias circuit can receive the compensation signal following the temperature change as the pre-bias signal (such as the bias source signal or the bias control signal) through the compensation node, so that the bias circuit can output the bias signal following the temperature change to the power amplifier, that is, the bias signal output by the bias circuit is adapted to the current temperature, so as to avoid the performance deterioration of the power amplifier caused by excessive temperature compensation.

[0298] In order to realize the accuracy of the compensation signal output by the temperature compensation circuit 100 to the compensation node under different temperature conditions, the temperature compensation circuit 100 provided by the present application outputs the first compensation signal to the compensation node by the first temperature compensation module 10 in the first temperature interval, and outputs the second compensation signal to the compensation node by the second temperature compensation module 20 in the third temperature interval, and the first compensation signal has a first correlation with the temperature, and the second compensation signal has a second correlation with the temperature, and the first correlation and the second correlation have different correlations with the temperature, so that the temperature compensation circuit 100 can realize different compensation effects with different temperature correlations in different temperature intervals, so that the application scenarios of the temperature compensation circuit 100 are more abundant.

[0299] Further, based on the problem that the first temperature compensation module 10 leaks the compensation signal to the compensation node under high temperature conditions, such as the third temperature interval, the existence of the signal leakage problem will affect the accuracy of the electrical signal of the temperature compensation circuit 100 at the compensation node in the third temperature interval, therefore, the switch module is arranged in the temperature compensation circuit 100 of the present application, the first temperature compensation module 10 and the second temperature compensation module 20 are connected through the switch module, and the connection path between the first temperature compensation module 10 and the second temperature compensation module 20 is turned on by the switch module in the first temperature interval, and the connection path between the first temperature compensation module 10 and the second temperature compensation module 20 is turned off by the switch module in the third temperature interval. In order to effectively avoid the first temperature compensation module 10 from leaking the compensation signal to the compensation node in the third temperature interval, and affect the accuracy of the compensation signal output by the temperature compensation circuit 100 to the compensation node in the third temperature interval, so as to improve the accuracy and reliability of the compensation signal output by the temperature compensation circuit 100 to the compensation node, so as to realize higher precision temperature compensation.

[0300] In some embodiments, the switch module 30 is also used to disconnect the connection path between the first temperature compensation module 10 and the second temperature compensation module 20 in the second temperature interval.

[0301] Optionally, the switch module 30 is configured to, when the temperature is less than or equal to the first threshold, turn on the connection path between the first temperature compensation module 10 and the second temperature compensation module 20, and when the temperature is greater than the first threshold, turn off the connection path between the first temperature compensation module 10 and the second temperature compensation module 20; wherein the first threshold is less than the maximum temperature value of the third temperature range and greater than the maximum temperature value of the first temperature range.

[0302] That is, at least in the third temperature range, the switch module 30 turns off the connection path between the first temperature compensation module 10 and the second temperature compensation module 20, so that the first temperature compensation module 10 cannot output a signal to the compensation node. Alternatively, in the second temperature range and the third temperature range, the switch module 30 turns off the connection path between the first temperature compensation module 10 and the second temperature compensation module 20, so that the first temperature compensation module 10 cannot output a signal to the compensation node.

[0303] In this embodiment, in order to avoid the problem of the first temperature compensation module 10 leaking compensation signals to the compensation node in the second temperature range, and to improve the accuracy of the compensation signal output by the temperature compensation circuit 100 to the compensation node, the application controls the switch module to turn off the connection path between the first temperature compensation module 10 and the second temperature compensation module 20 in the second temperature range, so as to effectively avoid the problem of the first temperature compensation module 10 leaking compensation signals to the compensation node in the second temperature range.

[0304] Referring to FIGS. 19-20, in some embodiments, the first temperature compensation module 10 includes a first positive temperature compensation unit 101 and a first zero temperature compensation unit 102 connected to the first positive temperature compensation unit 101, the first positive temperature compensation unit 101 is configured to receive a first positive temperature coefficient current, and the first zero temperature compensation unit 102 is configured to receive a first zero temperature coefficient current; in the first temperature range, after receiving the first positive temperature coefficient current and the first zero temperature coefficient current, the first temperature compensation module 10 outputs a first compensation signal to the compensation node.

[0305] For example, the first positive temperature compensation unit 101 includes a first transistor P1 and a second transistor P2, and the first zero temperature compensation unit 102 includes a third transistor N1 and a fourth transistor N2, wherein the controlled end of the first transistor P1 and the second transistor P2 is configured to be connected to a first positive temperature coefficient power supply, and the first positive temperature coefficient power supply is configured to output a first positive temperature coefficient current; the controlled end of the third transistor N1 and the fourth transistor N2 is configured to be connected to a first zero temperature coefficient power supply, and the first zero temperature coefficient power supply is configured to output a first zero temperature coefficient current.

[0306] The first end of the first transistor P1 is connected to a power supply VDD, the second end of the first transistor P1 is connected to the first end of the second transistor P2, the second end of the second transistor P2 is connected to the second end of the third transistor N1 and the first end of the fourth transistor N2, the second end of the fourth transistor N2 is grounded, and the first end of the third transistor N1 is connected to the switch module 30 and connected to the branch where the compensation point is located through the switch module 30.

[0307] Further, in the first temperature interval, the first transistor P1, the second transistor P2, the third transistor N1 and the fourth transistor N2 are in the on state, and the first temperature compensation module 10 outputs the first compensation signal to the compensation node through the third transistor N1. In the second temperature interval and the third temperature interval, no current passes through the third transistor N1 to output to the compensation node, and the third transistor N1 is equivalent to be in the off state.

[0308] Optionally, the first transistor P1 and the second transistor P2 are first type transistors, the third transistor N1 and the fourth transistor N2 are the same type transistors, and the third transistor N1 and the fourth transistor N2 are second type transistors different from the first type transistors. For example, the first type transistors are PMOS transistors, and the second type transistors are NMOS transistors.

[0309] As shown in FIG. 19, in some embodiments, the second temperature compensation module 20 includes a second positive temperature compensation unit 201 and a second zero temperature compensation unit 202 connected to the second positive temperature compensation unit 201, the second positive temperature compensation unit 201 is used to receive a second positive temperature coefficient current, and the second zero temperature compensation unit 202 is used to receive a second zero temperature coefficient current. In the third temperature interval, after receiving the second positive temperature coefficient current and the second zero temperature coefficient current, the second temperature compensation module 20 outputs a second compensation signal to the compensation node.

[0310] For example, the second positive temperature compensation unit 201 includes a fifth transistor N3 and a sixth transistor N4, and the second zero temperature compensation unit 202 includes a seventh transistor P3 and an eighth transistor P4, wherein the controlled ends of the fifth transistor N3 and the sixth transistor N4 are connected to a second positive temperature coefficient power supply for outputting a second positive temperature coefficient current, and the controlled ends of the seventh transistor P3 and the eighth transistor P4 are connected to a second zero temperature coefficient power supply for outputting a second zero temperature coefficient current.

[0311] And, the first end of the seventh transistor P3 is connected to a power supply, the second end of the seventh transistor P3 is connected to the first end of the eighth transistor P4, the second end of the eighth transistor P4 is connected to the second end of the fifth transistor N3 and the first end of the sixth transistor N4, the second end of the sixth transistor N4 is grounded, and the first end of the fifth transistor N3 is connected to the branch where the switch module and the compensation point are located.

[0312] Further, in the third temperature interval, the fifth transistor N3, the sixth transistor N4, the seventh transistor P3 and the eighth transistor P4 are in the on state, and the second temperature compensation module 20 outputs the second compensation signal to the compensation node through the fifth transistor N3. In the first temperature interval and the second temperature interval, no current passes through the fifth transistor N3 to output to the compensation node, which is equivalent to the fifth transistor N3 being in the off state.

[0313] Optionally, the fifth transistor N3 and the sixth transistor N4 are third type transistors, the seventh transistor P3 and the eighth transistor P4 are fourth type transistors, and the seventh transistor P3 and the eighth transistor P4 are fourth type transistors different from the third type transistors. For example, the third type transistors are NMOS tubes, and the fourth type transistors are PMOS tubes.

[0314] As shown in FIGS. 19 and 20, the first positive temperature coefficient power supply A1 is configured to output a first positive temperature coefficient current to the first transistor P1 and the second transistor P2, and the first zero temperature coefficient power supply B1 is configured to output a first zero temperature coefficient current to the third transistor N1 and the fourth transistor N2. The magnitudes of the first positive temperature coefficient current and the first zero temperature coefficient current can be set as needed.

[0315] The second positive temperature coefficient power supply A2 is configured to output a second positive temperature coefficient current to the seventh transistor N3 and the eighth transistor N4, and the second zero temperature coefficient power supply B2 is configured to output a second zero temperature coefficient current to the fifth transistor P3 and the sixth transistor P4. The magnitudes of the second positive temperature coefficient current and the second zero temperature coefficient current can be set as needed.

[0316] In the first temperature interval (t0-t1], the first positive temperature coefficient current is output to the first transistor P1 and the second transistor P2, and the first zero temperature coefficient current is output to the third transistor N1 and the fourth transistor N2, so that the first transistor P1, the second transistor P2, the third transistor N1 and the fourth transistor N2 are in the on state. According to the first positive temperature coefficient current, the first zero temperature coefficient current and the inherent coefficients of the first transistor P1, the second transistor P2, the third transistor N1 and the fourth transistor N2, the magnitude of the current IP2 flowing through the second transistor P2 and the magnitude of the current IN2 flowing through the fourth transistor N2 can be calculated.

[0317] As shown in FIG. 20, the current IP2 flowing through the second transistor P2 is positively correlated with temperature, and increases with the increase of temperature in the corresponding target temperature interval. The current IN2 flowing through the fourth transistor N2 is not correlated with temperature, and the size of IN2 does not change with the change of temperature.

[0318] Further, based on IN2 > IP2 in the first temperature interval (t0-t1], it is known that the fourth transistor N2 is in a saturated state, and the compensation current output by the first temperature compensation module 10 to the compensation node D can be considered as the current IN1 flowing through the third transistor N1. According to Kirchhoff's law, IN1 = IN2 - |IP2|, that is, in the first temperature interval (t0-t1], the compensation current output by the first temperature compensation module 10 to the compensation node D is the difference between the current IN2 flowing through the fourth transistor N2 and the absolute value |IP2| of the current flowing through the second transistor P2.

[0319] In the first temperature interval (t0-t1], with the increase of temperature, IP2 increases and IN2 remains unchanged, so IN1 decreases, that is, in the first temperature interval (t0-t1], with the increase of temperature, the compensation current output by the first temperature compensation module 10 to the compensation node D gradually decreases, that is, the compensation current (IN1) output by the first temperature compensation module 10 to the compensation node D is negatively correlated with temperature.

[0320] Meanwhile, in the first temperature interval (t0-t1], according to the second positive temperature coefficient current, the second zero temperature coefficient current, and the inherent coefficients of the fifth transistor P3, the sixth transistor P4, the seventh transistor N3, and the eighth transistor N4, the current IP4 flowing through the sixth transistor P4 and the current IN4 flowing through the eighth transistor N4 can be calculated.

[0321] Among them, the current IN4 flowing through the eighth transistor N4 is positively correlated with temperature, and increases with the increase of temperature in the corresponding target temperature interval. The current IP4 flowing through the sixth transistor P4 is not correlated with temperature, and the size of IP4 does not change with the change of temperature.

[0322] In the first temperature interval (t0-t1], IP4 > IN4, it is known that the eighth transistor N4 is in a saturated state, and the seventh transistor P3 and the eighth transistor P4 enter the linear region, IP4 is configured to be equal to IN4, so that the current IN3 flowing through the seventh transistor N3 is equal to zero, that is, no current flows through the seventh transistor N3 to the compensation node, and therefore the compensation signal (compensation current) output by the second temperature compensation module 20 to the compensation node D in the first temperature interval is zero.

[0323] Similarly, as shown in FIG. 20, in the second temperature interval (t1-t2), the current IP2 flowing through the second transistor P2 is greater than or equal to the current IN2 flowing through the fourth transistor N2, and since the size of IP2 is positively correlated with temperature and the size of IN2 is irrelevant to temperature.

[0324] As IP2≥IN2, the fourth transistor N2 is in a saturated state, IP2 is configured to be equal to IN2, so that the current IN1 flowing through the third transistor N1 is equal to zero, at this time, the third transistor N1 can be regarded as being disconnected, that is, no current passes through the third transistor N1 to output to the compensation node, and therefore the compensation signal (compensation current) output by the first temperature compensation module 20 to the compensation node D in the second temperature interval is zero.

[0325] Meanwhile, in the second temperature interval (t1-t2), the current IP4 flowing through the sixth transistor P4 is greater than or equal to the current IN4 flowing through the eighth transistor N4, and as IP4≥IN4, the seventh transistor P3 and the eighth transistor P4 enter the linear region, the eighth transistor N4 is in a saturated state, IP4 is configured to be equal to IN4, so that the current IN3 flowing through the seventh transistor N3 is equal to zero, at this time, the seventh transistor N3 can be regarded as being disconnected, that is, no current passes through the seventh transistor N3 to output to the compensation node, and therefore the compensation signal (compensation current) output by the second temperature compensation module 20 to the compensation node D in the second temperature interval is zero.

[0326] Similarly, as shown in FIG. 20, in the second temperature interval (t1-t2), the current IP2 flowing through the second transistor P2 is greater than or equal to the current IN2 flowing through the fourth transistor N2, and since the size of IP2 is positively correlated with temperature and the size of IN2 is irrelevant to temperature.

[0327] As IP2≥IN2, the fourth transistor N2 is in a saturated state, IP2 is configured to be equal to IN2, so that the current IN1 flowing through the third transistor N1 is equal to zero, at this time, the third transistor N1 can be regarded as being disconnected, that is, no current passes through the third transistor N1 to output to the compensation node, and therefore the compensation signal (compensation current) output by the first temperature compensation module 20 to the compensation node D in the second temperature interval is zero.

[0328] Meanwhile, in the third temperature interval [t2-t3), the current IP4 flowing through the sixth transistor P4 is less than the current IN4 flowing through the eighth transistor N4, and according to IN4≥IP4, the eighth transistor N4 is in a saturated state, and the compensation current output by the second temperature compensation module 20 to the compensation node D can be regarded as the current IN3 flowing through the seventh transistor N3. According to Kirchhoff's law, IN3=IN4-IP4, that is, in the third temperature interval [t2-t3), the compensation current output by the second temperature compensation module 10 to the compensation node D is the difference between the current IN4 flowing through the eighth transistor N4 and the absolute value of the current IP4 flowing through the sixth transistor P4.

[0329] In the third temperature interval [t2-t3), as the temperature rises, IP4 remains unchanged and IN4 increases, and IN3 increases, that is, in the third temperature interval [t2-t3), as the temperature rises, the compensation current output by the second temperature compensation module 20 to the compensation node D gradually increases, that is, the compensation current (IN3) output by the second temperature compensation module 20 to the compensation node D is positively correlated with the temperature.

[0330] Please refer to FIG. 19 and FIG. 21, generally in the third temperature interval, only the second temperature compensation module 20 needs to output the second compensation signal to the compensation node, at this time, the compensation signal is positively correlated with the temperature, and the second correlation relationship is shown as a straight line X1.

[0331] However, in the third temperature interval, when the threshold voltage VTH of the third transistor N1 of the first temperature compensation module 10 is less than a preset value, for example, in the third temperature interval, the threshold voltage VTH of the third transistor N1 is less than the threshold voltage VTH of the third transistor N1 in the first temperature interval, at this time, it will make the third transistor N1, which should be in a saturated state, conduct, so that part of the compensation current in the third temperature interval is output to the compensation node through the third transistor N1, at this time, since the first temperature compensation module 10 outputs the compensation signal to the compensation node, the second correlation relationship between the compensation signal and the temperature becomes as shown in the curve X2, thereby affecting the accuracy of the compensation signal output by the temperature compensation circuit in the third temperature interval.

[0332] In the present application, the first temperature compensation module 10 and the second temperature compensation module 20 are connected through the switch module, and the switch module is turned on to connect the connection path between the first temperature compensation module 10 and the second temperature compensation module 20 in the first temperature interval, and at least in the third temperature interval, the connection path between the first temperature compensation module 10 and the second temperature compensation module 20 is disconnected by controlling the switch module 30, so that the third transistor N1 cannot be turned on, and the current passing through the third transistor N1 cannot be output to the compensation node, thereby ensuring that only the second temperature compensation module 20 provides the compensation signal to the compensation node in the third temperature interval, so as to effectively avoid the first temperature compensation module 10 outputting the compensation signal to the compensation node in the third temperature interval, affecting the accuracy of the compensation signal output by the temperature compensation circuit 100 to the compensation node in the third temperature interval, thereby improving the accuracy and reliability of the compensation signal output by the temperature compensation circuit 100 to the compensation node, so as to realize higher-precision temperature compensation.

[0333] In some embodiments, the switch module 30 is also used to disconnect the connection path between the first temperature compensation module 10 and the second temperature compensation module 10 in the second temperature interval. For example, the switch module 30 has an on state and an off state, and can be switched between the on state and the off state.

[0334] When the temperature is in the first temperature interval, the switch module 30 is controlled to switch to the on state, so that the first temperature compensation module 10 is connected with the second temperature compensation module 20, and then the compensation current output by the first temperature compensation module 10 can flow to the compensation node through the second temperature compensation module 20.

[0335] When the temperature is in at least one of the second temperature interval and the third temperature interval, the switch module 30 is controlled to switch to the off state, so that the first temperature compensation module 10 is disconnected with the second temperature compensation module 20, and then in the corresponding second temperature interval and third temperature interval, the first temperature compensation module 10 will not affect the size of the compensation signal output by the second temperature compensation module 20 to the compensation node, thereby realizing higher-precision temperature compensation.

[0336] In some embodiments, the switch module 30 includes a switch tube K1, a first end of the switch tube K1 is connected to the first temperature compensation module 10, a second end of the switch tube K1 is connected to the second temperature compensation module 20, and a controlled end of the switch tube K1 is used to receive a control signal to turn on the connection path between the first temperature compensation module 10 and the second temperature compensation module 20 in the first temperature interval, and to disconnect the connection path between the first temperature compensation module 10 and the second temperature compensation module 20 in the third temperature interval.

[0337] As shown in FIG. 19, the first end of the switch tube K1 is connected to the first zero temperature compensation unit of the first temperature compensation module 10, and the second end of the switch tube K1 is connected to the second positive temperature compensation unit of the second temperature compensation module 20.

[0338] Optionally, the switch tube K1 is a MOS tube, and the first end of the MOS tube is a source level of the MOS tube, and the second end of the MOS tube is a drain of the MOS tube.

[0339] Preferably, the switch tube K1 is an NMOS tube. Since the on-resistance Ron of the NMOS tube is small compared to the resistance of the voltage dividing unit 402, and the VDS voltage drop generated is also small, not more than 10 mV (for example, 2 mV, 3 mV, 5 mV, or 7 mV, etc.), the accuracy and reliability of the compensation signal output by the temperature compensation circuit 100 to the compensation node can be better improved, and thus higher-precision temperature compensation can be achieved.

[0340] Referring to FIG. 22, in some embodiments, the temperature compensation circuit 100 further includes a switch control module 60 connected to the switch module 30 and configured to control the switch module 30 to be closed in the first temperature interval to turn on the connection path between the first temperature compensation module 10 and the second temperature compensation module 20, and to be opened in the third temperature interval to turn off the connection path between the first temperature compensation module 10 and the second temperature compensation module 20.

[0341] For example, the switch control module 60 includes a comparator 601, a first control tube 602, and a second control tube 603. The first end of the first control tube 602 is connected to the first end of the comparator 601 and configured to receive a first signal Ibias1, the second end of the first control tube 602 is grounded, the controlled end of the first control tube 602 is connected to the first end of the second control tube 603, and the first end of the second control tube 603 is also configured to receive a second signal Ibias2, the second end of the second control tube 603 is grounded, and the controlled end of the second control tube 603 is grounded. The second end of the comparator 601 is configured to receive a preset electrical signal, such as a voltage signal VBG.

[0342] Optionally, the first end of the comparator 601 is a non-inverting input terminal, and the second end of the comparator 601 is an inverting input terminal. Optionally, the first control tube 602 and the second control tube 603 are the same type of switch tube, such as both being PNP tubes or NPN tubes.

[0343] For example, taking the case where the first control tube 602 and the second control tube 603 are both PNP tubes as an example.

[0344] The first signal Ibias1 and the second signal Ibias2 are zero-temperature-coefficient bias currents, and the first control tube 602 and the second control tube 603 form a compound PNP tube, wherein the second control tube 603 is in an emitter follower connection.

[0345] The node 1 at which the controlled end of the first control tube 602 is connected to the first end of the second control tube 603 has a voltage VBE1, and the node 2 at which the first end of the first control tube 602 is connected to the first end of the comparator 601 has a voltage VBE2. Both VBE1 and VBE2 are negative-temperature-coefficient voltages. At normal temperature (for example, 25°C), VBE1 is generally approximately 0.7 V, and VBE2 is generally approximately 2*VBE1 = 1.4 V.

[0346] When the ambient temperature is within the first temperature range, for example, when the temperature T is less than t1, VBE2 is greater than VBG, and after passing through the comparator 601, the output end of the comparator 601 outputs a high level. The switch control module 60 controls the switch tube K1 of the switch module 30 to be turned on, so that the switch module 30 is in a conducting state.

[0347] When the ambient temperature is within the second temperature range and the third temperature range, for example, when the temperature is greater than a threshold temperature (for example, the threshold temperature is t1), the output end of the comparator 601 outputs a low level, and the switch tube K1 is controlled to be turned off, so that the switch module 30 is in an off state.

[0348] It can be understood that the specific implementation of the switch control module 60 can also have various circuit structures, as long as the switch control module 60 can output a corresponding high level or low level according to the control signal, so as to realize the control of the turn-on and turn-off of the switch tube K1 in the switch module 30.

[0349] Please refer to FIGS. 23 to 24. In some embodiments, the temperature compensation circuit 100 includes at least two first temperature compensation modules 10, and at least part of the first temperature compensation modules 10 includes a first switch. The first switch is used to adjust the number of the first temperature compensation modules 10 connected in the temperature compensation circuit 100.

[0350] When the number of the first temperature compensation modules 10 connected in the temperature compensation circuit 100 increases, the compensation signal value corresponding to the first compensation signal increases; when the number of the first temperature compensation modules 10 connected in the temperature compensation circuit 100 decreases, the compensation signal value corresponding to the first compensation signal decreases.

[0351] Optionally, the temperature compensation circuit 100 includes at least two second temperature compensation modules 20, and at least part of the second temperature compensation modules 20 includes a second switch. The second switch is used to adjust the number of the second temperature compensation modules 20 connected in the temperature compensation circuit 100.

[0352] When the number of the second temperature compensation modules 20 connected to the temperature compensation circuit 100 increases, the compensation signal value corresponding to the second compensation signal increases; when the number of the second temperature compensation modules 20 connected to the temperature compensation circuit 100 decreases, the compensation signal value corresponding to the second compensation signal decreases.

[0353] As shown in FIG. 23, the temperature compensation circuit 100 includes two first temperature compensation modules 10 and two second temperature compensation modules 20, wherein each first temperature compensation module 10 includes a corresponding first switch, and each second temperature compensation module 20 includes a corresponding second switch. For the sake of distinction, one first temperature compensation module 10 is marked as 10a, the first switch in the first temperature compensation module 10a is K2, the other first temperature compensation module 10 is marked as 10b, the first switch in the first temperature compensation module 10b is K3, one second temperature compensation module 20 is marked as 20a, the second switch in the second temperature compensation module 20a is K4, and the other second temperature compensation module 10 is marked as 20b, the second switch in the second temperature compensation module 20b is K5.

[0354] For example, the first temperature compensation module 10a is connected to the first positive temperature coefficient power supply A1 and the first zero temperature coefficient power supply B1 by closing the corresponding first switch K2. And / or, the first temperature compensation module 10b is connected to the first positive temperature coefficient power supply A1 and the first zero temperature coefficient power supply B1 by closing the corresponding first switch K2.

[0355] Similarly, the first temperature compensation module 10a is disconnected from the first positive temperature coefficient power supply A1 and the first zero temperature coefficient power supply B1 by opening the corresponding first switch K2. The first temperature compensation module 10b is disconnected from the first positive temperature coefficient power supply A1 and the first zero temperature coefficient power supply B1 by opening the corresponding first switch K3.

[0356] For example, the second temperature compensation module 20a is connected to the second positive temperature coefficient power supply A2 and the second zero temperature coefficient power supply B2 by closing the corresponding second switch K4, and / or, the second temperature compensation module 20b is connected to the second positive temperature coefficient power supply A2 and the second zero temperature coefficient power supply B2 by closing the corresponding second switch K5.

[0357] Similarly, the second temperature compensation module 20a is disconnected from the second positive temperature coefficient power supply A2 and the second zero temperature coefficient power supply B2 by opening the corresponding second switch K4, and / or, the second temperature compensation module 20b is disconnected from the second positive temperature coefficient power supply A2 and the second zero temperature coefficient power supply B2 by opening the corresponding second switch K5.

[0358] Based on each temperature compensation circuit can output corresponding compensation signal to the compensation node in the corresponding target temperature interval, therefore, by changing the number of first temperature compensation module 10 in the temperature compensation circuit 100 to change the size of the first compensation signal output by the temperature compensation circuit 100 to the compensation node, by changing the number of second temperature compensation module 20 in the temperature compensation circuit 100 to change the size of the second compensation signal output by the temperature compensation circuit 100 to the compensation node.

[0359] And, the number of first temperature compensation module 10 in the temperature compensation circuit 100 is positively correlated with the size of the first compensation signal output by the temperature compensation circuit 100 to the compensation node. The number of second temperature compensation module 10 in the temperature compensation circuit 100 is positively correlated with the size of the second compensation signal output by the temperature compensation circuit 100 to the compensation node.

[0360] In some embodiments, increasing the number of first temperature compensation module 10 in the temperature compensation circuit 100, the change amount of the first compensation signal in the first correlation relationship in unit time increases; reducing the number of first temperature compensation module 10 in the temperature compensation circuit 100, the change amount of the first compensation signal in the first correlation relationship in unit time decreases.

[0361] Increasing the number of second temperature compensation module 20 in the temperature compensation circuit 100, the change amount of the second compensation signal in the second correlation relationship in unit time increases, reducing the number of second temperature compensation module 20 in the temperature compensation circuit 100, the change amount of the second compensation signal in the second correlation relationship in unit time decreases.

[0362] As shown in FIG. 8, when only the first temperature compensation module 10a is accessed in the temperature compensation circuit 100, the corresponding first correlation relationship is the line segment corresponding to K2, when only the first temperature compensation module 10b is accessed in the temperature compensation circuit 100, the corresponding first correlation relationship is the line segment corresponding to K3, when the first temperature compensation module 10a and the first temperature compensation module 10b are accessed in the temperature compensation circuit 100, the corresponding first correlation relationship is the line segment corresponding to K2+K3. Among them, the change amount of the first compensation signal in unit time in the line segment corresponding to K2+K3 is greater than the change amount of the first compensation signal in unit time in the line segment corresponding to K2 or K3.

[0363] When only the second temperature compensation module 20a is connected in the temperature compensation circuit 100, the corresponding second correlation is the line segment corresponding to K4. When only the second temperature compensation module 20b is connected in the temperature compensation circuit 100, the corresponding second correlation is the line segment corresponding to K5. When the second temperature compensation module 20a and the second temperature compensation module 20b are simultaneously connected in the temperature compensation circuit 100, the corresponding second correlation is the line segment corresponding to K4+K5. The change amount of the second compensation signal in the line segment corresponding to K4+K5 in a unit time is greater than the change amount of the second compensation signal in the line segment corresponding to K4 or K5 in a unit time.

[0364] Referring to FIG. 19 and FIG. 25, the power supply module 40 includes an operational amplifier 401 and a voltage dividing unit 402. The first end of the operational amplifier 401 is connected to the output end of the operational amplifier 401, and the output end of the amplifier 401 is connected to the first end of the voltage dividing unit 402. The second end of the operational amplifier 401 is used to receive a preset electrical signal, such as a voltage signal VBG. Optionally, the voltage dividing unit 402 includes but is not limited to a resistor.

[0365] wherein the preset electrical signal VBG is a constant value, the resistance of the voltage dividing unit 402 is R, the potential of the C point in the power supply module 40 is VBG, and the voltage value at the compensation node is VOUT. Then, VOUT=VBG-IOUT*R, and IOUT is the current input to the compensation node by the temperature compensation circuit.

[0366] Therefore, in the first temperature interval, IOUT decreases with the increase of temperature, so VOUT increases with the increase of temperature, and VOUT is a positive temperature coefficient voltage. In the second temperature interval, IOUT is zero, and VOUT=VBG. In the third temperature interval, IOUT increases with the increase of temperature, so VOUT decreases with the increase of temperature, and VOUT is a negative temperature coefficient voltage.

[0367] Referring to FIG. 26, FIG. 26 is a schematic diagram of the circuit structure provided by the second embodiment of the present application.

[0368] As shown in FIG. 26, different from the first embodiment, the temperature compensation circuit 100 does not have a switch module 30, and the first temperature compensation module 10 is connected to the second temperature compensation module 20. That is, the temperature compensation circuit 100 includes at least one first temperature compensation module 10, at least one second temperature compensation module 20, and a power supply module 40.

[0369] The first temperature compensation module 10 is connected with the second temperature compensation module 20, the first temperature compensation module 10 is used for outputting a first compensation signal to the compensation node in a first temperature range, the first compensation signal has a first correlation with temperature. The second temperature compensation module 20 is used for outputting a second compensation signal to the compensation node in a third temperature range, the second compensation signal has a second correlation with temperature, and the compensation signals output by the first temperature compensation module 10 and the second temperature compensation module 20 in a second temperature range have no correlation with temperature, the second temperature range is between the first temperature range and the third temperature range; in the first correlation, the first compensation signal has a negative correlation with temperature, and in the second correlation, the second compensation signal has a positive correlation with temperature.

[0370] Exemplarily, the first temperature compensation module 10 is also used for receiving a first positive temperature coefficient current and a first zero temperature coefficient current, the first positive temperature coefficient current and the first zero temperature coefficient current can enable the first temperature compensation module 10 to output the first compensation signal to the compensation node in the first temperature range.

[0371] The second temperature compensation module 20 is also used for receiving a second positive temperature coefficient current and a second zero temperature coefficient current, the second positive temperature coefficient current and the second zero temperature coefficient current can enable the second temperature compensation module 20 to output the second compensation signal to the compensation node in the third temperature range.

[0372] Further, the first temperature compensation module 10 comprises a first positive temperature compensation unit 101 and a first zero temperature compensation unit 102 connected with the first positive temperature compensation unit 101, the first positive temperature compensation unit 101 is used for receiving the first positive temperature coefficient current, and the first zero temperature compensation unit 102 is used for receiving the first zero temperature coefficient current; in the first temperature range, after receiving the first positive temperature coefficient current and the first zero temperature coefficient current, the first temperature compensation module 10 outputs the first compensation signal to the compensation node.

[0373] The second temperature compensation module 20 comprises a second positive temperature compensation unit 201 and a second zero temperature compensation unit 202 connected with the second positive temperature compensation unit 201, the second positive temperature compensation unit 201 is used for receiving the second positive temperature coefficient current, and the second zero temperature compensation unit 202 is used for receiving the second zero temperature coefficient current; in the third temperature range, after receiving the second positive temperature coefficient current and the second zero temperature coefficient current, the second temperature compensation module 20 outputs the second compensation signal to the compensation node.

[0374] As shown in FIG. 26, the second embodiment is different from the embodiment in FIG. 3 in that, in the embodiment in FIG. 3, the first temperature compensation module 10 and the second temperature compensation module 20 are connected through the switch module 30, in the present embodiment, there is no switch module 30, and the first temperature compensation module 10 is connected with the second temperature compensation module 20.

[0375] The first positive temperature compensation unit 101 comprises a first transistor P1 and a second transistor P2, and the first zero temperature compensation unit 102 comprises a third transistor N1 and a fourth transistor N2, wherein the controlled ends of the first transistor P1 and the second transistor P2 are connected with a first positive temperature coefficient power supply, and the first positive temperature coefficient power supply is configured to output a first positive temperature coefficient current; the controlled ends of the third transistor N1 and the fourth transistor N2 are connected with a first zero temperature coefficient power supply, and the first zero temperature coefficient power supply is configured to output a first zero temperature coefficient current.

[0376] The first end of the first transistor P1 is connected with a power supply, the second end of the first transistor P1 is connected with the first end of the second transistor P2, the second end of the second transistor P2 is connected with the second end of the third transistor N1 and the first end of the fourth transistor N2, the second end of the fourth transistor N2 is grounded, and the first end of the third transistor N1 is connected with a branch where a compensation point is located.

[0377] In the first temperature interval, the first transistor P1, the second transistor P2, the third transistor N1 and the fourth transistor N2 are in a conductive state, and the first temperature compensation module 10 outputs a first compensation signal to the compensation point through the third transistor N1; in the second temperature interval and the third temperature interval, the third transistor N1 is in a closed state.

[0378] The second positive temperature compensation unit 201 comprises a seventh transistor N3 and an eighth transistor N4, and the second zero temperature compensation unit 202 comprises a fifth transistor P3 and a sixth transistor P4, wherein the controlled ends of the fifth transistor P3 and the sixth transistor P4 are connected with a second zero temperature coefficient power supply, and the second zero temperature coefficient power supply is configured to output a second zero temperature coefficient current; the controlled ends of the seventh transistor N3 and the eighth transistor N4 are connected with a second positive temperature coefficient power supply, and the second positive temperature coefficient power supply is configured to output a second positive temperature coefficient current.

[0379] The first end of the seventh transistor N3 is connected with a power supply, the second end of the seventh transistor N3 is connected with the first end of the eighth transistor N4, the second end of the eighth transistor N4 is connected with the second end of the fifth transistor P3 and the first end of the sixth transistor P4, the second end of the sixth transistor P4 is grounded, and the first end of the fifth transistor P3 is connected with a branch where a compensation point is located.

[0380] In the third temperature interval, the fifth transistor P3, the sixth transistor P4, the seventh transistor N3 and the eighth transistor N4 are in a conductive state, and the second temperature compensation module 20 outputs a second compensation signal to the compensation point through the seventh transistor N3. In the first temperature interval and the second temperature interval, the seventh transistor N3 is in a closed state.

[0381] In the second embodiment, the functions and working principles of the same circuit structure in the temperature compensation circuit are the same as those of the temperature compensation circuit in the first embodiment, which will not be described herein.

[0382] Referring to FIG. 27, FIG. 27 is a schematic diagram of a circuit structure provided in the third embodiment of the present application.

[0383] As shown in FIG. 27, the temperature compensation circuit 100 includes at least one first temperature compensation module 10, at least one second temperature compensation module 20, and a power supply module 40.

[0384] The first temperature compensation module 10 is connected to the second temperature compensation module 20. The first temperature compensation module 10 is configured to output a first compensation signal to the compensation node in a first temperature range, and the first compensation signal has a first correlation with temperature. The second temperature compensation module 20 is configured to output a second compensation signal to the compensation node in a third temperature range, and the second compensation signal has a second correlation with temperature. The compensation signals output by the first temperature compensation module 10 and the second temperature compensation module 20 in a second temperature range have no correlation with temperature, and the second temperature range is between the first temperature range and the third temperature range. In the first correlation, the first compensation signal has a negative correlation with temperature, and in the second correlation, the second compensation signal has a positive correlation with temperature.

[0385] For example, the first temperature compensation module 10 is further configured to receive a first positive temperature coefficient current and a first zero temperature coefficient current. The first positive temperature coefficient current and the first zero temperature coefficient current can enable the first temperature compensation module 10 to output the first compensation signal to the compensation node in the first temperature range.

[0386] The second temperature compensation module 20 is further configured to receive a second positive temperature coefficient current and a second zero temperature coefficient current. The second positive temperature coefficient current and the second zero temperature coefficient current can enable the second temperature compensation module 20 to output the second compensation signal to the compensation node in the third temperature range.

[0387] Further, the first temperature compensation module 10 includes a first positive temperature compensation unit 101 and a first zero temperature compensation unit 102 connected to the first positive temperature compensation unit 101. The first positive temperature compensation unit 101 is configured to receive the first positive temperature coefficient current, and the first zero temperature compensation unit 102 is configured to receive the first zero temperature coefficient current. In the first temperature range, after receiving the first positive temperature coefficient current and the first zero temperature coefficient current, the first temperature compensation module 10 outputs the first compensation signal to the compensation node.

[0388] The second temperature compensation module 20 comprises a second positive temperature compensation unit 201 and a second zero temperature compensation unit 202 connected with the second positive temperature compensation unit 201, the second positive temperature compensation unit 201 is configured to receive a second positive temperature coefficient current, and the second zero temperature compensation unit 202 is configured to receive a second zero temperature coefficient current; in the third temperature interval, after receiving the second positive temperature coefficient current and the second zero temperature coefficient current, the second temperature compensation module 20 outputs a second compensation signal to the compensation node.

[0389] In the third embodiment, the functions and working principles of the same circuit structure in the temperature compensation circuit are the same as those of the temperature compensation circuit in the second embodiment, which will not be repeated here.

[0390] The third embodiment is different from the second embodiment in that, optionally, the first positive temperature compensation unit 101 comprises a first transistor N1 and a second transistor N2, and the first zero temperature compensation unit 102 comprises a third transistor P1 and a fourth transistor P2, wherein the controlled end of the first transistor N1 and the second transistor N2 is configured to be connected with a first positive temperature coefficient power supply A1, and the first positive temperature coefficient power supply A1 is configured to output a first positive temperature coefficient current; the controlled end of the third transistor P1 and the fourth transistor P2 is configured to be connected with a first zero temperature coefficient power supply B1, and the first zero temperature coefficient power supply B1 is configured to output a first zero temperature coefficient current.

[0391] Furthermore, the first end of the third transistor P1 is configured to be connected with a power supply VDD, the second end of the third transistor P1 is connected with the first end of the fourth transistor P2 and the first end of the first transistor N1, the second end of the fourth transistor P2 is connected with a branch where the compensation point is located; the second end of the first transistor N1 is connected with the first end of the second transistor N2, and the second end of the second transistor N2 is grounded.

[0392] Optionally, the second positive temperature compensation unit 201 comprises a fifth transistor P3 and a sixth transistor P4, and the second zero temperature compensation unit 202 comprises a seventh transistor N3 and an eighth transistor N4, wherein the controlled end of the fifth transistor P3 and the sixth transistor P4 is configured to be connected with a second positive temperature coefficient power supply A2, and the second positive temperature coefficient power supply A2 is configured to output a second positive temperature coefficient current; the controlled end of the seventh transistor N3 and the eighth transistor N4 is configured to be connected with a second zero temperature coefficient power supply B2, and the second zero temperature coefficient power supply B2 is configured to output a second zero temperature coefficient current.

[0393] Furthermore, the first end of the fifth transistor P3 is configured to be connected with the power supply VDD, the second end of the fifth transistor P3 is connected with the first end of the sixth transistor P4 and the first end of the seventh transistor N3, the second end of the sixth transistor P4 is connected with the branch where the compensation point is located; the second end of the seventh transistor N3 is connected with the first end of the eighth transistor N4, and the second end of the eighth transistor N4 is grounded.

[0394] As shown in Fig. 28, after the first positive temperature compensation unit 101 receives the first positive temperature coefficient current and the first zero temperature compensation unit 102 receives the first zero temperature coefficient current, the current flowing through the first transistor N1 is IN1, the magnitude of IN1 is positively related to temperature, and the current flowing through the third transistor P1 is IP1, the magnitude of IP1 is independent of temperature.

[0395] After the second positive temperature compensation unit 201 receives the second positive temperature coefficient current and the second zero temperature compensation unit 202 receives the second zero temperature coefficient current, the current flowing through the fifth transistor P3 is IP3, the magnitude of IP3 is positively related to temperature, and the current flowing through the seventh transistor N3 is IN3, the magnitude of IN3 is independent of temperature.

[0396] In the first temperature interval (t0-t1], IP1>IN1, the first transistor N1, the second transistor N2, the third transistor P1 and the fourth transistor P2 are in the on state, and the first positive temperature compensation module 10 outputs a current IOUT to the compensation node through the fourth transistor P2, IOUT=|IP2|=|IP1|-IN1, |IP1| does not change with temperature, and IN1 increases with the increase of temperature, so IOUT decreases with the increase of temperature, that is, IOUT is negatively related to temperature.

[0397] At this time, the voltage of the compensation node is VOUT, VOUT=VBG+IOUT*R, VOUT decreases with the increase of temperature, and VOUT is a negative temperature coefficient voltage.

[0398] In the first temperature interval (t0-t1], IN3≥IP3, the sixth transistor P4 is in the saturation state, the seventh transistor N3 and the eighth transistor N4 enter the linear region, so that the current IP4 flowing through the sixth transistor P4 is equal to zero, that is, no current flows through the sixth transistor P4 to the compensation node, which can be regarded as the sixth transistor P4 being in the off state, so the second temperature compensation module 20 outputs a compensation signal (compensation current) of zero to the compensation node D in the first temperature interval.

[0399] Similarly, in the second temperature interval (t1-t2), IN3≥IP3, the sixth transistor P4 is in the saturation state, so that the current IP4 flowing through the sixth transistor P4 is equal to zero, that is, no current flows through the sixth transistor P4 to the compensation node, which can be regarded as the sixth transistor P4 being in the off state, so the second temperature compensation module 20 outputs a compensation signal (compensation current) of zero to the compensation node D in the second temperature interval.

[0400] In the second temperature interval, IP1≤IN1, the fourth transistor P2 is in the off state, so that the current IP2 of the fourth transistor P2 is equal to zero, that is, no current flows through the fourth transistor P2 to the compensation node, which can be regarded as the fourth transistor P2 being in the off state, and thus the compensation signal (compensation current) output by the first temperature compensation module 10 to the compensation node D in the second temperature interval is zero.

[0401] Similarly, in the third temperature interval [t2-t3), IP1<IN1, the fourth transistor P2 is in the off state, so that the current IP2 of the fourth transistor P2 is equal to zero, that is, no current flows through the fourth transistor P2 to the compensation node, which can be regarded as the fourth transistor P2 being in the off state, and thus the compensation signal (compensation current) output by the first temperature compensation module 10 to the compensation node D in the third temperature interval is zero.

[0402] In the third temperature interval, IN3<IP3, the current |IP3| flowing through P3 is greater than the current IN3 flowing through N3, the fifth transistor P3, the sixth transistor P4, the seventh transistor N3, and the eighth transistor N4 are in the on state, and the second positive temperature compensation module 20 outputs a current IOUT to the compensation node through the sixth transistor P4, IOUT=|IP4|=|IP3|-IN3, |IP3| increases with the increase of temperature, and IN3 does not change with temperature, so IOUT increases with the increase of temperature.

[0403] At this time, the voltage of the compensation node is VOUT, VOUT=VBG+IOUT*R, and VOUT increases with the increase of temperature, and VOUT is a positive temperature coefficient voltage.

[0404] In some embodiments, the voltage at the compensation node D can be adjusted by adjusting the resistance value of the voltage dividing unit 402 in the power supply module 40. For example, an adjustable resistor is arranged in the voltage dividing unit 402, and the voltage at the compensation node D is adjusted by adjusting the resistance value of the adjustable resistor. Alternatively, the voltage dividing unit 402 is provided with switches and resistors, and the number of resistors connected in the voltage dividing unit 402 is controlled by the opening or closing of the switches, so that the resistance value of the voltage dividing unit 402 is adjustable.

[0405] Please refer to FIG. 29, which is a block diagram of a communication device provided by the present application.

[0406] As shown in FIG. 29, the communication device 3 comprises an antenna module 2 and a radio frequency front-end module 1, and the radio frequency front-end module 1 is connected with the antenna module 2. The radio frequency front-end module 1 can work in a transmitting mode or a receiving mode, and the working mode of the radio frequency front-end module 1 can be switched by a transmitting / receiving switch. When the radio frequency front-end module 1 works in the transmitting mode, the received radio frequency analog signal is transmitted to the antenna module 2 to perform signal transmission through the antenna module 2. When the radio frequency front-end module 1 works in the receiving mode, the radio frequency front-end module 1 receives the radio frequency analog signal received by the antenna module 2 to perform amplification, filtering and other processing on the radio frequency analog signal. It can be understood that the communication device 100 not only comprises the antenna device, but also comprises other modules, such as a signal processing device, a processor, a user interface, a memory and the like. The communication device includes but is not limited to a personal digital assistant (PDA), a mobile phone, a notebook computer plug-in card, a wireless tablet computer and the like.

[0407] It should also be understood that the term "and / or" used in the specification and the appended claims of the present application means any combination of one or more of the associated listed items and all possible combinations, and includes these combinations.

[0408] The above description is merely a specific implementation of the present application, but the protection scope of the present application is not limited thereto. Any person skilled in the art can easily think of various equivalent modifications or replacements within the technical scope disclosed by the present application, and these modifications or replacements should be included in the protection scope of the present application. Therefore, the protection scope of the present application should be subject to the protection scope of the claims.

Claims

1. A radio frequency front end module, wherein, The power amplifier circuit, a bias circuit providing a bias signal for the power amplifier circuit, and a protection circuit connected with the bias circuit are included. The protection circuit is configured such that a clamping value on an output branch of the protection circuit connected with the bias circuit has a first correlation with temperature in a first temperature interval and a second correlation with temperature in a third temperature interval, the first correlation and the second correlation are different in correlation with temperature, and a minimum value of the third temperature interval is greater than a maximum value of the first temperature interval. A maximum value of the bias signal output by the bias circuit is less than or equal to the clamping value.

2. The radio frequency front-end module of claim 1, wherein, In the first correlation, the clamping value on the output branch of the protection circuit is negatively correlated with temperature, and in the second correlation, the clamping value on the output branch of the protection circuit is positively correlated with temperature.

3. The radio frequency front-end module of claim 1, wherein, Alternatively, in the first correlation, the clamping value on the output branch of the protection circuit is positively correlated with temperature, and in the second correlation, the clamping value on the output branch of the protection circuit is negatively correlated with temperature. In a second temperature interval, the clamping value on the output branch of the protection circuit is independent of temperature, and the second temperature interval is between the first temperature interval and the third temperature interval.

4. The radio frequency front end module of claim 1, wherein, The protection circuit includes a temperature compensation circuit and a clamping circuit, the clamping circuit is connected with a branch in which a compensation node of the temperature compensation circuit is located, and an output end of the clamping circuit is connected with the bias circuit.

5. The radio frequency front end module of claim 1, wherein, The temperature compensation circuit is configured to output a first compensation signal or a second compensation signal to the compensation node, the first compensation signal has a third correlation with temperature in a first temperature interval, and the second compensation signal has a fourth correlation with temperature in a third temperature interval; and the clamping circuit is configured to cause the bias circuit and the clamping circuit to have the first correlation with temperature in the first temperature interval based on the first compensation signal, and to have the second correlation with temperature in the third temperature interval based on the second compensation signal. The clamping circuit is configured such that any one of the first compensation signal and the second compensation signal causes the clamping value on the output branch of the clamping circuit to be less than or equal to a first threshold value.

6. The radio frequency front end module of claim 5, wherein, The clamping circuit includes a clamping branch and a following branch, the clamping branch is connected with the branch in which the compensation node is located, and is configured to generate a corresponding initial clamping signal based on the compensation signal of the compensation node; 7. The radio frequency front end module of claim 5, wherein, The output branch of the following branch is connected with the bias circuit, and the following branch is configured to cause the clamping value on the output branch of the following branch to have the first correlation with temperature in the first temperature interval and the second correlation with temperature in the third temperature interval based on the initial clamping signal, and the output branch of the following branch is the same branch as the output branch of the protection circuit. ​ 8. The radio frequency front end module of claim 7, wherein, The clamping branch generates a first initial clamping signal based on the first compensation signal, and generates a second initial clamping signal based on the second compensation signal; The first initial clamping signal has the same relationship with temperature in the first temperature interval as the clamping value on the output branch of the clamping circuit has with temperature in the first temperature interval; and the second initial clamping signal has the same relationship with temperature in the third temperature interval as the clamping value on the output branch of the clamping circuit has with temperature in the third temperature interval.

9. The radio frequency front end module of claim 7, wherein, The clamping branch includes an operational amplifier, a first switch tube, and a second voltage dividing unit, a first input end of the operational amplifier is connected with a branch in which the compensation node is located, an output end of the operational amplifier is connected with a controlled end of the first switch tube and an input end of a follow-up branch, a first end of the first switch tube is used for receiving a first preset voltage, a second end of the first switch tube is connected with a second input end of the operational amplifier, and the second end of the first switch tube is connected with a first end of the second voltage dividing unit, and a second end of the second voltage dividing unit is grounded.

10. The radio frequency front end module of claim 9, wherein, The second voltage dividing unit includes a resistor, and the resistance of the resistor is adjustable.

11. The radio frequency front end module of claim 9, wherein, The follow-up branch includes a second switch tube, a controlled end of the second switch tube is connected with the controlled end of the first switch tube, a first end of the second switch tube is used for receiving a second preset voltage, and a second end of the second switch tube is connected with the biasing circuit; wherein, a connection branch in which the second switch tube is connected with the biasing circuit is an output branch of the follow-up branch.

12. The radio frequency front end module of claim 11, wherein, The first switch tube and the second switch tube are MOS tubes of the same type.

13. The radio frequency front end module of claim 11, wherein, The first switch tube and the second switch tube are PNP tubes.

14. The radio frequency front end module of claim 5, wherein, The temperature compensation circuit includes at least one first temperature compensation module and at least one second temperature compensation module; The first temperature compensation module is used for outputting the first compensation signal to a compensation node in a first temperature interval. The second temperature compensation module is used for outputting the second compensation signal to the compensation node in a third temperature interval, and the clamping circuit is connected with a branch in which the compensation node is located.

15. The radio frequency front end module of claim 14, wherein, The first temperature compensation module includes a first positive temperature compensation unit and a first zero temperature compensation unit connected with the first positive temperature compensation unit, the first positive temperature compensation unit is used for receiving a first positive temperature coefficient current, and the first zero temperature compensation unit is used for receiving a first zero temperature coefficient current; and in the first temperature interval, the first temperature compensation module outputs the first compensation signal to the compensation node.

16. The radio frequency front end module of claim 15, wherein, The first positive temperature compensation unit includes a first transistor and a second transistor, and the first zero temperature compensation unit includes a third transistor and a fourth transistor, wherein, a controlled end of the first transistor and the second transistor is used for being connected with a first positive temperature coefficient power supply, the first positive temperature coefficient power supply is used for outputting the first positive temperature coefficient current; a controlled end of the third transistor and the fourth transistor is used for being connected with a first zero temperature coefficient power supply, and the first zero temperature coefficient power supply is used for outputting the first zero temperature coefficient current. The first end of the first transistor is configured to be connected to a power supply, the second end of the first transistor is connected to the first end of the second transistor, the second end of the second transistor is connected to the second end of the third transistor and the first end of the fourth transistor, the second end of the fourth transistor is grounded, and the first end of the third transistor is connected to the second temperature compensation module and a branch where the compensation point is located.

17. The radio frequency front end module of claim 16, wherein, In the first temperature interval, the first transistor, the second transistor, the third transistor and the fourth transistor are in a conductive state, and the first temperature compensation module outputs the first compensation signal to the compensation point through the third transistor.

18. The radio frequency front end module of claim 16, wherein, In the third temperature interval, the third transistor is in a non-conductive state.

19. The radio frequency front end module of claim 14, wherein, The second temperature compensation module comprises a second positive temperature compensation unit and a second zero temperature compensation unit connected to the second positive temperature compensation unit, the second positive temperature compensation unit is configured to receive a second positive temperature coefficient current, and the second zero temperature compensation unit is configured to receive a second zero temperature coefficient current; in the third temperature interval, the second temperature compensation module outputs the second compensation signal to the compensation point.

20. The radio frequency front end module of claim 19, wherein, The second positive temperature compensation unit comprises a fifth transistor and a sixth transistor, and the second zero temperature compensation unit comprises a seventh transistor and an eighth transistor, wherein the controlled ends of the fifth transistor and the sixth transistor are configured to be connected to a second positive temperature coefficient power supply, the second positive temperature coefficient power supply is configured to output the second positive temperature coefficient current, the controlled ends of the seventh transistor and the eighth transistor are configured to be connected to a first zero temperature coefficient power supply, and the first zero temperature coefficient power supply is configured to output the first zero temperature coefficient current. The first end of the seventh transistor is configured to be connected to a power supply, the second end of the seventh transistor is connected to the first end of the eighth transistor, the second end of the eighth transistor is connected to the second end of the fifth transistor and the first end of the sixth transistor, the second end of the sixth transistor is grounded, and the first end of the fifth transistor is connected to the first temperature compensation module and a branch where the compensation point is located.

21. The radio frequency front-end module of any one of claims 1-20, wherein, The second end of the bias circuit is configured to be connected to the protection circuit, the third end of the bias circuit is configured to be connected to the power amplification circuit and output a bias signal to the power amplification circuit, and the first end of the bias circuit is configured to receive a bias source signal.

22. The radio frequency front end module of claim 21, wherein, The bias circuit comprises a bias transistor, the first end of the bias circuit is the first end of the bias transistor, and the first end of the bias transistor is configured to receive a bias source signal. The second end of the bias circuit is the second end of the bias transistor, the second end of the bias transistor is configured to be connected to the output branch of the protection circuit, the third end of the bias circuit is the third end of the bias transistor, the third end of the bias transistor is connected to the power amplification circuit, and is configured to output a bias signal to the power amplification circuit.

23. The radio frequency front end module of claim 22, wherein, The bias transistor is a bipolar transistor, a first end of the bias transistor is a base, a second end of the bias transistor is a collector, and a third end of the bias transistor is an emitter. Alternatively, the bias transistor is a field effect transistor, a first end of the bias transistor is a gate, a second end of the bias transistor is a source, and a third end of the bias transistor is a drain.

24. The radio frequency front end module of claim 22, wherein, The bias circuit further comprises a first capacitor, a first end of the first capacitor is connected to the second end of the bias transistor, and a second end of the first capacitor is grounded.

25. The radio frequency front-end module of any one of claims 1-20, wherein, The power amplification circuit comprises a first amplification branch and a second amplification branch; a first output end of the bias circuit is connected to an input end of the first amplification branch and is configured to output a first bias signal to the first amplification branch; a second output end of the bias circuit is connected to an input end of the second amplification branch and is configured to output a second bias signal to the second amplification branch; wherein a maximum value of the first bias signal output by the bias circuit is less than or equal to the clamping value; and a maximum value of the second bias signal output by the bias circuit is less than or equal to the clamping value. Alternatively, the power amplification circuit comprises a first amplification branch and a second amplification branch; the bias circuit comprises a first bias circuit and a second bias circuit; the protection circuit is connected to the first bias circuit and the second bias circuit respectively, an output end of the first bias circuit is connected to an input end of the first amplification branch and is configured to output a first bias signal to the first amplification branch; an output end of the second bias circuit is connected to an input end of the second amplification branch and is configured to output a second bias signal to the second amplification branch; wherein a maximum value of the first bias signal output by the first bias circuit is less than or equal to the clamping value; and a maximum value of the second bias signal output by the second bias circuit is less than or equal to the clamping value.

26. The radio frequency front-end module of any one of claims 1-20, wherein, The power amplification circuit comprises a first amplification branch and a second amplification branch; the bias circuit comprises a first bias circuit and a second bias circuit; the protection circuit is connected to the first bias circuit and the second bias circuit respectively, an output end of the first bias circuit is connected to an input end of the first amplification branch and is configured to output a first bias signal to the first amplification branch; an output end of the second bias circuit is connected to an input end of the second amplification branch and is configured to output a second bias signal to the second amplification branch; wherein a maximum value of the first bias signal output by the first bias circuit is less than or equal to the clamping value; and a maximum value of the second bias signal output by the second bias circuit is less than or equal to the clamping value. The power amplification circuit comprises a first amplification branch and a second amplification branch; the bias circuit comprises a first bias circuit and a second bias circuit; the protection circuit is connected to the first bias circuit and the second bias circuit respectively, an output end of the first bias circuit is connected to an input end of the first amplification branch and is configured to output a first bias signal to the first amplification branch; an output end of the second bias circuit is connected to an input end of the second amplification branch and is configured to output a second bias signal to the second amplification branch; wherein a maximum value of the first bias signal output by the first bias circuit is less than or equal to the clamping value; and a maximum value of the second bias signal output by the second bias circuit is less than or equal to the clamping value. Alternatively, the power amplification circuit includes a first-stage amplification circuit and a second-stage amplification circuit connected in series; the bias circuit includes a first bias circuit and a second bias circuit; the protection circuit is connected to the first bias circuit and the second bias circuit respectively, an output end of the first bias circuit is connected to an input end of the first-stage amplification circuit, and is configured to output a first bias signal to the first-stage amplification circuit; an output end of the second bias circuit is connected to an input end of the second-stage amplification circuit, and is configured to output a second bias signal to the second-stage amplification circuit; wherein a maximum value of the first bias signal output by the first bias circuit is less than or equal to the clamping value; a maximum value of the second bias signal output by the second bias circuit is less than or equal to the clamping value.

27. A radio frequency front end module, comprising: Comprising: a power amplification circuit and a bias circuit for providing a bias signal to the power amplification circuit; a maximum value of the bias signal output by the bias circuit and temperature in the first temperature interval present a fifth correlation, a maximum value of the bias signal output by the bias circuit and temperature in the third temperature interval present a sixth correlation, the fifth correlation and the sixth correlation are different, and a minimum value of the third temperature interval is greater than a maximum value of the first temperature interval.

28. A radio frequency front end module, comprising: Comprising: a power amplification circuit and a bias circuit for providing a bias signal to the power amplification circuit; a second end of the bias circuit is configured to be connected to a protection circuit, and the protection circuit is configured to make a clamping value on an output branch where the protection circuit is connected to the bias circuit present a first relationship with temperature in a target temperature interval; a first end of the bias circuit is configured to be connected to a bias control circuit, and the bias control circuit is configured to make a bias source signal on an output branch where the bias circuit is connected to the bias control circuit present a second relationship with temperature in the target temperature interval; the first relationship and the second relationship are different; a third end of the bias circuit is configured to be connected to the power amplification circuit and output a bias signal to the power amplification circuit.

29. A radio frequency front end module, comprising: Comprising: a power amplification circuit and a bias circuit for providing a bias signal to the power amplification circuit; a power amplification circuit and a bias circuit for providing a bias signal to the power amplification circuit; the bias circuit is connected to a protection circuit, and the protection circuit is configured to make a clamping value on an output branch where the protection circuit is connected to the bias circuit present a positive correlation with temperature in a first temperature interval, wherein a maximum value of the first temperature interval is less than a first temperature threshold value; and / or, the protection circuit is configured to make a clamping value on an output branch where the bias circuit is connected to the protection circuit present a negative correlation with temperature in a third temperature interval, wherein a minimum value of the third temperature interval is greater than a second temperature threshold value.

30. A radio frequency front end module, comprising: Comprising: a substrate, a first chip and a second chip disposed on the substrate; the first chip includes a power amplification circuit and a bias circuit for providing a bias signal to the power amplification circuit; the second chip includes a protection circuit connected to the bias circuit. The protection circuit is configured to make the clamping value on the output branch connected by the protection circuit and the bias circuit have a first correlation with temperature in a first temperature range. The protection circuit is configured to make the clamping value on the output branch connected by the protection circuit and the bias circuit have a second correlation with temperature in a third temperature range, the minimum value of the third temperature range being greater than the maximum value of the first temperature range.

31. A communications device, comprising: The communication device comprises the radio frequency front-end module according to any one of claims 1-51 and an antenna module connected with the radio frequency front-end module.

32. A temperature compensation circuit, wherein, The temperature compensation circuit comprises at least one first temperature compensation module, at least one second temperature compensation module, and a switch module connected between the first temperature compensation module and the second temperature compensation module. The first temperature compensation module is configured to output a first compensation signal to a compensation node in a first temperature range, the first compensation signal having a first correlation with temperature. The second temperature compensation module is configured to output a second compensation signal to the compensation node in a third temperature range, the second compensation signal having a second correlation with temperature, and the minimum value of the third temperature range being greater than the maximum value of the first temperature range. The switch module is configured to at least turn on a connection path between the first temperature compensation module and the second temperature compensation module in the first temperature range, and at least turn off the connection path between the first temperature compensation module and the second temperature compensation module in the third temperature range.

33. The temperature compensation circuit of claim 32, wherein, The first temperature compensation module and the second temperature compensation module output compensation signals that are independent of temperature in a second temperature range between the first temperature range and the third temperature range.

34. The temperature compensation circuit of claim 32, wherein, The first temperature compensation module comprises a first positive temperature compensation unit and a first zero temperature compensation unit connected to the first positive temperature compensation unit, the first positive temperature compensation unit being configured to receive a first positive temperature coefficient current, and the first zero temperature compensation unit being configured to receive a first zero temperature coefficient current; and in the first temperature range, the first temperature compensation module outputs the first compensation signal to the compensation node.

35. The temperature compensation circuit of claim 34, wherein, The first positive temperature compensation unit comprises a first transistor and a second transistor, and the first zero temperature compensation unit comprises a third transistor and a fourth transistor, wherein the controlled ends of the first transistor and the second transistor are configured to receive the first positive temperature coefficient current output by a first positive temperature coefficient power supply; and the controlled ends of the third transistor and the fourth transistor are configured to receive the first zero temperature coefficient current output by a first zero temperature coefficient power supply. The first end of the first transistor is connected to a power supply, the second end of the first transistor is connected to the first end of the second transistor, the second end of the second transistor is connected to the second end of the third transistor and the first end of the fourth transistor, the second end of the fourth transistor is grounded, the first end of the third transistor is connected to the switch module and is connected to the branch where the compensation point is located through the switch module.

36. The temperature compensation circuit of claim 35, wherein, In the first temperature range, the first transistor, the second transistor, the third transistor and the fourth transistor are in the on state, and the first temperature compensation module outputs the first compensation signal to the compensation node through the third transistor.

37. The temperature compensation circuit of claim 35, wherein, In the second temperature range and the third temperature range, the third transistor is in the off state.

38. The temperature compensation circuit of claim 4, wherein, The first transistor and the second transistor are first type transistors, the third transistor and the fourth transistor are second type transistors different from the first type transistors, the first type transistors are PMOS tubes, and the second type transistors are NMOS tubes.

39. The temperature compensation circuit of claim 34, wherein, The second temperature compensation module comprises a second positive temperature compensation unit and a second zero temperature compensation unit connected to the second positive temperature compensation unit, the second positive temperature compensation unit is configured to receive a second positive temperature coefficient current, and the second zero temperature compensation unit is configured to receive a second zero temperature coefficient current; in the third temperature range, the second temperature compensation module outputs the second compensation signal to the compensation node.

40. The temperature compensation circuit of claim 39, wherein, The second positive temperature compensation unit comprises a fifth transistor and a sixth transistor, and the second zero temperature compensation unit comprises a seventh transistor and an eighth transistor, wherein the controlled ends of the fifth transistor and the sixth transistor are configured to receive the second positive temperature coefficient current output by a second positive temperature coefficient power supply; the controlled ends of the seventh transistor and the eighth transistor are configured to receive the first zero temperature coefficient current output by a first zero temperature coefficient power supply; The first end of the seventh transistor is connected to a power supply, the second end of the seventh transistor is connected to the first end of the eighth transistor, the second end of the eighth transistor is connected to the second end of the fifth transistor and the first end of the sixth transistor, the second end of the sixth transistor is grounded, and the first end of the fifth transistor is connected to the switch module and the branch where the compensation point is located.

41. The temperature compensation circuit of claim 40, wherein, In the third temperature range, the fifth transistor, the sixth transistor, the seventh transistor and the eighth transistor are in the on state, and the second temperature compensation module outputs the second compensation signal to the compensation node through the seventh transistor.

42. The temperature compensation circuit of claim 40, wherein, In the first temperature range and the second temperature range, the fifth transistor is in the off state.

43. The temperature compensation circuit of claim 40, wherein, The switch module comprises a switch tube, a first end of the switch tube is connected to the first temperature compensation module, a second end of the switch tube is connected to the second temperature compensation module, and a controlled end of the switch tube is used for receiving a control signal to turn on a connection path between the first temperature compensation module and the second temperature compensation module in the first temperature interval and to turn off the connection path between the first temperature compensation module and the second temperature compensation module in the third temperature interval.

44. The temperature compensation circuit of claim 34, wherein, The switch module comprises a switch tube, a first end of the switch tube is connected to the first temperature compensation module, a second end of the switch tube is connected to the second temperature compensation module, and a controlled end of the switch tube is used for receiving a control signal to turn on a connection path between the first temperature compensation module and the second temperature compensation module in the first temperature interval and to turn off the connection path between the first temperature compensation module and the second temperature compensation module in the third temperature interval.

45. The temperature compensation circuit of claim 44, wherein, The switch tube is an NMOS tube, the first end of the switch tube is a source level of the NMOS tube, the second end of the switch tube is a drain of the NMOS tube, and the controlled end of the switch tube is a gate of the NMOS tube.

46. The temperature compensation circuit of claim 32, wherein, The temperature compensation circuit further comprises a switch control module connected to the switch module and used for outputting a first control signal to the switch module in the first temperature interval to control the switch module to turn on a connection path between the first temperature compensation module and the second temperature compensation module, and outputting a second control signal to the switch module in the third temperature interval to control the switch module to turn off the connection path between the first temperature compensation module and the second temperature compensation module.

47. The temperature compensation circuit of any of claims 32-46, wherein, In the first correlation, the size of the first compensation signal is negatively correlated with temperature, and in the second correlation, the size of the second compensation signal is positively correlated with temperature.

48. The temperature compensation circuit of any of claims 32-46, wherein, The first temperature compensation module and the second temperature compensation module output a compensation signal of zero in a second temperature interval.

49. The temperature compensation circuit of any one of claims 32-46, wherein, The temperature compensation circuit comprises at least two first temperature compensation modules, and at least part of the first temperature compensation modules comprises a first switch used for adjusting the number of the first temperature compensation modules connected to the temperature compensation circuit. In the first temperature interval, when the number of the first temperature compensation modules connected to the temperature compensation circuit increases, the compensation signal value corresponding to the first compensation signal increases; when the number of the first temperature compensation modules connected to the temperature compensation circuit decreases, the compensation signal value corresponding to the first compensation signal decreases. And / or, the temperature compensation circuit comprises at least two second temperature compensation modules, and at least part of the second temperature compensation modules comprises a second switch used for adjusting the number of the second temperature compensation modules connected to the temperature compensation circuit. In the third temperature interval, when the number of the second temperature compensation modules connected to the temperature compensation circuit increases, the compensation signal value corresponding to the second compensation signal increases; when the number of the second temperature compensation modules connected to the temperature compensation circuit decreases, the compensation signal value corresponding to the second compensation signal decreases.

50. The temperature compensation circuit of claim 49, wherein, Increasing the first temperature compensation module connected in the temperature compensation circuit, the first compensation signal in the first correlation relationship increases in the unit time; reducing the first temperature compensation module connected in the temperature compensation circuit, the first compensation signal in the first correlation relationship decreases in the unit time; Increasing the second temperature compensation module connected in the temperature compensation circuit, the second compensation signal in the second correlation relationship increases in the unit time; reducing the second temperature compensation module connected in the temperature compensation circuit, the second compensation signal in the second correlation relationship decreases in the unit time.

51. The temperature compensation circuit of any of claims 33-46, wherein, The switch module is also used to disconnect the connection path between the first temperature compensation module and the second temperature compensation module in the second temperature interval.

52. A temperature compensation circuit, comprising: A temperature compensation circuit for providing a compensation signal to a target circuit, the temperature compensation circuit comprising at least one first temperature compensation module, at least one second temperature compensation module, and a switch module connecting the first temperature compensation module and the second temperature compensation module; The first temperature compensation module is used to output a first compensation signal to a compensation node in a first temperature interval, the first compensation signal being in a first correlation with temperature; The second temperature compensation module is used to output a second compensation signal to the compensation node in a third temperature interval, the second compensation signal being in a second correlation with temperature, and the minimum value of the third temperature interval being greater than the maximum value of the first temperature interval; The compensation signals output by the first temperature compensation module and the second temperature compensation module in a second temperature interval are independent of temperature, the second temperature interval being between the first temperature interval and the third temperature interval; The switch module is used to turn on the connection path between the first temperature compensation module and the second temperature compensation module when the temperature is less than or equal to a first threshold value, and turn off the connection path between the first temperature compensation module and the second temperature compensation module when the temperature is greater than the first threshold value; The first threshold value is less than the maximum temperature value of the third temperature interval and greater than the maximum temperature value of the first temperature interval.

53. A temperature compensation circuit, wherein, A temperature compensation circuit for providing a compensation signal to a target circuit, the temperature compensation circuit comprising at least one first temperature compensation module and at least one second temperature compensation module; The first temperature compensation module is used to output a first compensation signal to a compensation node in a first temperature interval, the first compensation signal being in a first correlation with temperature; The second temperature compensation module is used to output a second compensation signal to the compensation node in a third temperature interval, the second compensation signal being in a second correlation with temperature, and the compensation signals output by the first temperature compensation module and the second temperature compensation module in a second temperature interval being independent of temperature, the second temperature interval being between the first temperature interval and the third temperature interval; The first compensation signal in the first correlation is negatively correlated with temperature, and the second compensation signal in the second correlation is positively correlated with temperature.

54. A power amplifier, wherein, The power amplifier comprises the temperature compensation circuit, the bias circuit and the power amplification circuit as claimed in any one of claims 32-53, and the bias circuit is connected to the temperature compensation circuit and the power amplification circuit.

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