Light-emitting substrate and preparation method therefor, and light-emitting device

Abstract

The embodiments of the present disclosure relate to the technical field of display. Provided are a light-emitting substrate and a preparation method therefor, and a light-emitting device. The light-emitting substrate comprises: a base, a plurality of light-emitting devices and a packaging layer, wherein the plurality of light-emitting devices are arranged on the base; and the packaging layer is arranged on the side of the plurality of light-emitting devices away from the base. Each light-emitting device comprises a cathode, an anode, a light-emitting layer, a first functional layer and an auxiliary functional layer, wherein each cathode and the corresponding anode are arranged opposite each other; each light-emitting layer is located between the corresponding cathode and the corresponding anode; each first functional layer is located between the corresponding light-emitting layer and the corresponding cathode; and each auxiliary functional layer is located on the side of the corresponding light-emitting layer away from the corresponding anode. The light-emitting substrate is used for displaying images.

Description

Light-emitting substrate, preparation method thereof and light-emitting device

[0001] The present application claims priority to Chinese Patent Application No. 202410869737.0, filed on June 28, 2024, the entire contents of which are incorporated herein by reference. TECHNICAL FIELD

[0002] The present disclosure relates to the technical field of display, and in particular to a light-emitting substrate, a preparation method thereof and a light-emitting device. BACKGROUND

[0003] Quantum dots (QDs) as a new type of light-emitting material have the advantages of high light color purity, high light-emitting quantum efficiency, adjustable light-emitting color, long service life, etc., and have become a research hotspot of new light-emitting diode (LED) light-emitting materials. Therefore, quantum dot light-emitting diode (QLED) using quantum dot material as a light-emitting layer has become a main direction of research on new display devices.

[0004] In some implementations, the QLED light-emitting substrate exhibits a positive aging phenomenon under the action of an acidic encapsulating glue (such as an acrylic encapsulating glue), so that the performance of the QLED light-emitting device is improved. However, due to the influence of the positive aging effect, the QLED light-emitting device has the problem of poor stability. SUMMARY

[0005] Embodiments of the present disclosure aim to provide a light-emitting substrate, a preparation method thereof and a light-emitting device, to solve the problem of poor stability of the QLED light-emitting device under the action of positive aging.

[0006] To achieve the above-mentioned purpose, embodiments of the present disclosure provide the following technical solutions:

[0007] In one aspect, a light-emitting substrate is provided. The light-emitting substrate includes a substrate, a plurality of light-emitting devices, and an encapsulating layer. The plurality of light-emitting devices are disposed on the substrate. The encapsulating layer is disposed on a side of the plurality of light-emitting devices away from the substrate. The light-emitting device includes a cathode, an anode, a light-emitting layer, a first functional layer, and an auxiliary functional layer. The cathode and the anode are oppositely disposed. The light-emitting layer is located between the cathode and the anode. The first functional layer is located between the light-emitting layer and the cathode. The auxiliary functional layer is located on a side of the light-emitting layer away from the anode.

[0008] It can be understood that, through the above setting, in the first aspect, the hydrogen element can be transmitted from the auxiliary functional layer to the first functional layer, playing a positive aging role, so that the active sites (such as oxygen vacancy defects) on the material surface of the first functional layer can be occupied by the hydrogen element, so that the performance of the light emitting device can be improved. In the second aspect, after the active sites on the material surface of the first functional layer are occupied by the hydrogen element, the influence of other atmospheres on the light emitting device can be reduced, so that the controllability of the positive aging role can be improved, and the stability of the light emitting device can be improved. In the third aspect, when the light emitting device includes an auxiliary functional layer, the process of treating the light emitting device by the acidic packaging glue included in some implementation manners can be omitted, so that the influence of the acid atmosphere on the morphology of the light emitting device can be avoided. In the fourth aspect, the hydrogen element transmitted to the first functional layer can act as a shallow donor in the first functional layer, so that the carrier concentration of the first functional layer can be improved, and the conductivity of the first functional layer can be improved.

[0009] In some embodiments, the auxiliary functional layer includes a first auxiliary functional layer. The material of the first auxiliary functional layer includes an insulating material containing hydrogen elements.

[0010] In some embodiments, the first auxiliary functional layer is arranged on a side of the cathode away from the first functional layer.

[0011] In some embodiments, the light emitting device further includes an auxiliary cathode. The auxiliary cathode is located on a side of the first auxiliary functional layer away from the cathode and is electrically connected to the cathode.

[0012] In some embodiments, the first auxiliary functional layer includes a plurality of spaced vias. The auxiliary cathode is electrically connected to the cathode through the plurality of vias.

[0013] In some embodiments, the size of the auxiliary cathode along the first direction is greater than or equal to the size of the cathode along the first direction. The first direction is the thickness direction of the substrate.

[0014] In some embodiments, the size of the cathode along the first direction ranges from 10 nm to 50 nm. The size of the auxiliary cathode along the first direction ranges from 10 nm to 100 nm. The first direction is the thickness direction of the substrate.

[0015] In some embodiments, the light emitting substrate further includes a pixel defining layer. The pixel defining layer is arranged on the substrate and includes a plurality of pixel openings. The plurality of light emitting devices are correspondingly arranged in the plurality of pixel openings. The cathode is closer to the substrate than the anode. The first auxiliary functional layers of the plurality of light emitting devices are connected as a common functional layer, and the common functional layer is arranged between the pixel defining layer and the substrate.

[0016] In some embodiments, the material of the first auxiliary functional layer comprises one or any combination of silicon nitride, silicon oxynitride, and silicon oxide. Alternatively, the material of the first auxiliary functional layer comprises an insulating polymer material and a protonic acid. Alternatively, the material of the first auxiliary functional layer comprises a protonated organic molecular cage.

[0017] In some embodiments, in the case where the material of the first auxiliary functional layer comprises one or any combination of silicon nitride, silicon oxynitride, and silicon oxide, the atomic percentage of hydrogen in the first auxiliary functional layer ranges from greater than 0% to less than or equal to 30%. In the case where the material of the first auxiliary functional layer comprises an insulating polymer material and a protonic acid, the molar ratio of the protonic acid to the insulating polymer material ranges from 2.5:10 to 3.5:10.

[0018] In some embodiments, the atomic percentage of hydrogen in the first functional layer ranges from 1% to 30%.

[0019] In some embodiments, the size of the first auxiliary functional layer along a first direction ranges from 550 nm to 1100 nm. The first direction is the thickness direction of the substrate.

[0020] In some embodiments, the ratio of the size of the first auxiliary functional layer along a first direction to the size of the cathode along the first direction ranges from 5 to 110. The first direction is the thickness direction of the substrate.

[0021] In some embodiments, the light transmittance of the first auxiliary functional layer is greater than or equal to 80%.

[0022] In some embodiments, the auxiliary functional layer comprises a second auxiliary functional layer. The second auxiliary functional layer is disposed between the cathode and the light-emitting layer. The material of the second auxiliary functional layer comprises a nano-catalyst material. The nano-catalyst material is configured to dissociate hydrogen in a hydrogen atmosphere under a predetermined condition.

[0023] In some embodiments, the nano-catalyst material comprises one or any combination of a metal, a metal oxide, and a metal complex.

[0024] In some embodiments, the size of the second auxiliary functional layer along a first direction ranges from 30 nm to 80 nm. The first direction is the thickness direction of the substrate.

[0025] In some embodiments, the material of the encapsulation layer comprises a neutral organic material and / or a basic organic material.

[0026] In some embodiments, the auxiliary functional layer includes: a first auxiliary functional layer, and / or, a second auxiliary functional layer. The first auxiliary functional layer is disposed on a side of the cathode distal to the first functional layer. The material of the first auxiliary functional layer includes an insulating material. The insulating material contains hydrogen element. The second auxiliary functional layer is disposed between the cathode and the light-emitting layer. The material of the second auxiliary functional layer includes a nano-catalyst material, which is configured to dissociate hydrogen in a hydrogen atmosphere under a preset condition.

[0027] In another aspect, a method for manufacturing a light-emitting substrate is provided. The method includes: forming a substrate; forming a plurality of light-emitting devices on a side of the substrate. The light-emitting devices include a cathode, an anode, a light-emitting layer, a first functional layer, and an auxiliary functional layer. The cathode and the anode are oppositely disposed. The light-emitting layer is between the cathode and the anode. The first functional layer is between the light-emitting layer and the cathode. The auxiliary functional layer is on a side of the light-emitting layer distal to the anode. An encapsulation layer is formed on a side of the plurality of light-emitting devices distal to the substrate.

[0028] The method for manufacturing the light-emitting substrate can achieve the same beneficial effects as the light-emitting substrate, which will not be repeated here.

[0029] In some embodiments, the auxiliary functional layer includes a first auxiliary functional layer disposed on a side of the cathode distal to the first functional layer. The material of the first auxiliary metal layer includes an insulating material, which contains hydrogen element. The method for manufacturing the light-emitting substrate further includes: after forming the plurality of light-emitting devices, performing a heating treatment on the plurality of light-emitting devices.

[0030] In some embodiments, the heating treatment has a processing temperature range of 80-120°C. And / or, the heating treatment has a processing time range of 10-120 minutes.

[0031] In some embodiments, the method for manufacturing the light-emitting substrate further includes: performing hydrogen ion implantation on the first auxiliary functional layer, and / or, the first functional layer.

[0032] In some embodiments, the auxiliary functional layer includes a second auxiliary functional layer disposed between the cathode and the light-emitting layer. The material of the second auxiliary functional layer includes a nano-catalyst material. The nano-catalyst material is configured to dissociate hydrogen in a hydrogen atmosphere under a preset condition. The method for manufacturing the light-emitting substrate further includes: forming the first functional layer and the second auxiliary functional layer; and treating the first functional layer and the second auxiliary functional layer in a hydrogen atmosphere.

[0033] In another aspect, a light-emitting device is provided. The light-emitting device includes a driving chip and a light-emitting substrate as described in any of the above embodiments. The driving chip is configured to drive the light-emitting substrate to emit light.

[0034] The light emitting device can achieve the same beneficial effects as the light emitting substrate, which will not be repeated here. BRIEF DESCRIPTION OF DRAWINGS

[0035] In order to more clearly illustrate the technical solutions in the present disclosure, the drawings needed to be used in some embodiments of the present disclosure will be briefly introduced as follows. Obviously, the drawings in the following description are only some drawings of the embodiments of the present disclosure, and other drawings can also be obtained by those skilled in the art according to these drawings. In addition, the drawings in the following description can be regarded as schematic diagrams, and are not limited to the actual size, actual process, actual timing of signals, etc. of the products involved in the embodiments of the present disclosure.

[0036] FIG. 1 is a structural diagram of a light emitting device according to some embodiments;

[0037] FIG. 2 is a structural diagram of a light emitting substrate according to some embodiments;

[0038] FIG. 3 is a structural diagram of a light emitting substrate according to further embodiments;

[0039] FIG. 4 is a structural diagram of a light emitting device according to some embodiments;

[0040] FIG. 5A is a structural diagram of a light emitting substrate according to further embodiments;

[0041] FIG. 5B is a structural diagram of a light emitting substrate according to further embodiments;

[0042] FIG. 6 is a structural diagram of a light emitting device according to further embodiments;

[0043] FIG. 7 is a structural diagram of a light emitting device according to further embodiments;

[0044] FIG. 8 is a structural diagram of a light emitting substrate according to further embodiments;

[0045] FIG. 9 is a curve diagram of current density versus voltage according to some embodiments;

[0046] FIG. 10 is a curve diagram of current density versus voltage according to further embodiments;

[0047] FIG. 11 is a structural diagram of a light emitting device according to further embodiments;

[0048] FIG. 12 is a structural diagram of a light emitting device according to further embodiments;

[0049] FIG. 13 is a schematic diagram of hydrogen element diffusion of an auxiliary functional layer of a light emitting device according to some embodiments;

[0050] FIG. 14 is a structural diagram of a light emitting device according to further embodiments;

[0051] FIG. 15 is a structural diagram of a light emitting device according to still other embodiments;

[0052] FIG. 16 is a structural diagram of a light emitting device according to still other embodiments;

[0053] FIG. 17 is a structural diagram of a light emitting device according to still other embodiments;

[0054] FIG. 18 is a flowchart of a manufacturing process of a light emitting substrate according to some embodiments. DETAILED DESCRIPTION

[0055] The technical solutions in the embodiments of the present disclosure will be clearly and completely described below with reference to the drawings. It is obvious that the described embodiments are only a part of the embodiments of the present disclosure, and not all the embodiments. Based on the embodiments provided by the present disclosure, all other embodiments obtained by a person of ordinary skill in the art belong to the scope of protection of the present disclosure.

[0056] Unless otherwise required by context, the term "comprises" in the specification and claims is to be construed as an open, inclusive meaning, i.e., "comprises, but not limited to". In the description of the specification, the terms "one embodiment", "some embodiments", "exemplary embodiment", "example", or "some examples" are intended to mean that the particular feature, structure, material, or characteristic being described in connection with this embodiment or example includes at least one embodiment or example of the present disclosure. The illustrative representations of the above terms do not necessarily refer to the same embodiment or example. In addition, the particular features, structures, materials, or characteristics described can be included in any suitable way in one or more embodiments or examples.

[0057] In the description of the embodiments of the present disclosure below, the meaning of "a plurality of" is two or more, unless otherwise specified.

[0058] In describing some embodiments, the term "connected" and its conjugations can be used. The term "connected" is to be construed broadly, for example, "connected" can be fixedly connected, or detachably connected, or integrated; can be directly connected, or indirectly connected through an intermediate medium.

[0059] "A, B, and C at least one of" has the same meaning as "at least one of A, B, or C", and includes the following combinations of A, B, and C: only A, only B, only C, a combination of A and B, a combination of A and C, a combination of B and C, and a combination of A, B, and C.

[0060] "A and / or B" includes the following three combinations: only A, only B, and a combination of A and B.

[0061] As used herein, the use of“configured to” means open and inclusive language that does not exclude additional devices configured to perform the described task or step.

[0062] Additionally, the use of“based on” means open and inclusive, as a process, step, calculation, or other action that is“based on” one or more recited conditions or values can in practice be based on additional conditions or values beyond those recited.

[0063] As used herein,“about,”“approximately” or“around” includes the recited value and the average value within an acceptable range of deviation from the recited value, as determined by one of ordinary skill in the art considering the measurement in question and the error in measuring the particular quantity (i.e., the limitations of the measurement system).

[0064] As used herein,“parallel,”“perpendicular,”“equal” includes the recited condition and conditions that approximate the recited condition, the approximation being within an acceptable range of deviation, as determined by one of ordinary skill in the art considering the measurement in question and the error in measuring the particular quantity (i.e., the limitations of the measurement system). For example,“parallel” includes absolute parallel and near parallel, where near parallel can be within an acceptable deviation of, for example, 5°;“perpendicular” includes absolute perpendicular and near perpendicular, where near perpendicular can also be within an acceptable deviation of, for example, 5°. “Equal” includes absolute equality and near equality, where near equality can be within an acceptable deviation of, for example, less than or equal to 5% of either of the two quantities being compared.

[0065] It will be understood that when a layer or element is referred to as being“on” another layer or substrate, it can be directly on the other layer or substrate or intervening layers can also be present.

[0066] Exemplary embodiments are described herein with reference to cross-sectional and / or plan view illustrations that are idealized examples of exemplary embodiments. In the drawings, the thickness of layers and regions are exaggerated for clarity. Accordingly, variations from the shapes of the illustrations as a result, for example, of manufacturing techniques and / or tolerances, are to be expected. Thus, the exemplary embodiments should not be construed as limited to the particular shapes of regions as illustrated herein but are to include deviations in shapes that result, for example, from manufacturing. For example, an etched region illustrated as a rectangle will typically have rounded or curved features. Thus, the regions illustrated in the figures are schematic in nature and their shapes are not intended to illustrate the precise shape of a region of a device and are not intended to limit the scope of the exemplary embodiments.

[0067] It should be noted that, for example, 11-1 appearing in the drawings of the present disclosure indicates that the component 11 belongs to the component 1, for example, 221-220 appearing in FIG. 5A indicates that the pixel defining layer 221 belongs to the light emitting functional layer 220, and other similar notations appearing in the drawings also follow the above description.

[0068] As shown in FIG. 1, some embodiments of the present disclosure provide a light emitting device 300, which comprises a light emitting substrate 200.

[0069] The light emitting device 300 described above is, for example, a QLED light emitting device 300. At this time, the light emitting substrate 200 is a QLED light emitting substrate. Based on the quantum confinement effect, quantum dots have excellent light emitting properties such as wide band absorption, narrow band emission, and continuously adjustable peak position. At the same time, quantum dots have solution processability, which avoids the use of expensive vacuum equipment, so that the quantum dot light emitting diode (QLED) using quantum dots as light emitting materials can be used as a new type of light emitting diode.

[0070] For example, as shown in FIG. 1, the light emitting device 300 further comprises a driving chip 310. The driving chip 310 is used to drive the light emitting substrate 200 to emit light.

[0071] In addition, the light emitting device 300 can also comprise an under-screen camera and an under-screen fingerprint identification sensor, etc., so that the light emitting device 300 can realize various functions such as photographing, video recording, fingerprint identification, or face recognition.

[0072] The light emitting device 300 described above can be any light emitting device that displays both motion (e.g., video) and still (e.g., still images) and both text and images. More specifically, the light emitting device 300 of contemplated embodiments can be implemented in or in association with a variety of electronic devices such as, but not limited to, mobile telephones, wireless devices, personal data assistants (PDAs), hand-held or portable computers, GPS receivers / navigators, cameras, MP4 video players, camcorders, game consoles, watches, clocks, calculators, television monitors, flat panel displays, computer monitors, automobile displays (e.g., odometer display, etc.), navigation instruments, cockpit controls and / or displays, displays for camera views (e.g., displays for rear view cameras in vehicles), electronic photographs, electronic billboards or signs, projectors, building structures, packaging and aesthetic structures (e.g., displays for images of a piece of jewelry), etc.

[0073] In some embodiments, as shown in FIGS. 2 and 3, the light emitting substrate 200 comprises a substrate 210 and a plurality of light emitting devices 100 disposed on the substrate 210.

[0074] Exemplarily, the light-emitting substrate 200 further comprises a light-emitting functional layer 220 disposed on the substrate 210, and the light-emitting functional layer 220 comprises a plurality of light-emitting devices 100.

[0075] Exemplarily, the plurality of light-emitting devices 100 can be arranged along a second direction Y, for example, a direction parallel to the plane on which the substrate 210 lies.

[0076] Exemplarily, the material of the substrate 210 can be a rigid material, for example, glass, to realize a rigid substrate display; or the material of the substrate 210 can also be a flexible material, for example, polyimide (PI) or polyethylene glycol terephthalate (PET), to realize a flexible substrate display.

[0077] In some examples, as shown in FIG. 2, the light-emitting substrate 200 further comprises a driving circuit layer 230 disposed between the substrate 210 and the light-emitting functional layer 220, and the driving circuit layer 230 comprises a plurality of pixel driving circuits 231.

[0078] Exemplarily, the pixel driving circuit 231 can generate a driving current. Each light-emitting device 100 can emit light under the driving action of the driving current generated by the corresponding pixel driving circuit 231, and the light emitted by the plurality of light-emitting devices 100 cooperates with each other, so that the light-emitting substrate 200 realizes a light-emitting or display function.

[0079] In some examples, the driving circuit layer 230 comprises longitudinally and transversely intersecting strip-shaped cathodes and anodes, and the part where the rows and columns intersect can emit light. At this time, the pixel driving circuit 231 does not use TFT technology, and the light-emitting substrate 200 can be referred to as a passive driving light-emitting substrate (for example, a passive driving QLED light-emitting substrate, a PMQLED light-emitting substrate).

[0080] In other examples, as shown in FIG. 2, the driving circuit layer 230 comprises a plurality of array-arranged pixel driving circuits 231, and the pixel driving circuit 231 comprises a plurality of transistors TFT. The pixel driving circuit 231 is electrically connected with the light-emitting device 100, and is used to drive the light-emitting device 100 to emit light. At this time, the pixel driving circuit 231 uses TFT technology, and the light-emitting substrate 200 can be referred to as an active driving light-emitting substrate (for example, an active driving QLED light-emitting substrate, an AMQLED light-emitting substrate).

[0081] In some examples, as shown in FIG. 2, the light-emitting substrate 200 further comprises an encapsulation layer 240 disposed on the side of the plurality of light-emitting devices 100 away from the substrate 210.

[0082] It should be understood that the encapsulation layer 240 can encapsulate the light emitting device 100 to avoid water vapor and oxygen in the external environment from entering the light emitting substrate 200 and damaging the material in the light emitting device 100, thereby shortening the service life of the light emitting substrate 200.

[0083] Exemplarily, as shown in FIG. 2, the driving circuit layer 230, the light emitting functional layer 220, and the encapsulation layer 240 can be stacked on the substrate 210, and the driving circuit layer 230, the light emitting functional layer 220, and the encapsulation layer 240 are arranged in sequence in a direction away from the substrate 210.

[0084] In some embodiments, as shown in FIG. 3 and FIG. 4, each of the plurality of light emitting devices 100 includes an anode 11, a cathode 15, and a light emitting layer 13. The anode 11 and the cathode 15 are oppositely arranged. The light emitting layer 13 is located between the anode 11 and the cathode 15.

[0085] Exemplarily, the anode 11, the light emitting layer 13, and the cathode 15 can be stacked in a first direction X, which is the thickness direction of the substrate 210.

[0086] Based on the above structure, the light emitting principle of the light emitting device 100 is that, through the circuit (for example, a pixel driving circuit 231, as shown in FIG. 2) connected by the anode 11 and the cathode 15, holes are injected into the light emitting layer 13 by the anode 11, and electrons are injected into the light emitting layer 13 by the cathode 15. The injected electrons and holes form excitons (i.e., electron-hole pairs) in the light emitting layer 13, and the excitons are radiatively recombined to the ground state to emit photons.

[0087] Exemplarily, in order to ensure that the light emitting device 100 can effectively emit light, the anode 11 can be made of a material with a high work function, so that the holes generated by the anode 11 can effectively migrate into the light emitting layer 13 under the driving of an electric field, thereby recombining with the electrons generated by the cathode 15 to emit light.

[0088] In some examples, the anode 11 can be a transparent electrode, in which case the material of the anode 11 can be Indium Tin Oxide (ITO) or Fluorine-doped Tin Oxide conductive glass (FTO), or the material of the anode 11 can also be a conductive polymer, such as polyaniline (PANI), polycarbazole (PZ), polythiophene (PTh), or polypyrrole (PPy), etc. In yet some examples, the anode 11 can be an opaque electrode, in which case the material of the anode 11 can be a metal material, such as aluminum (Al) or silver (Ag), etc.

[0089] Exemplarily, the cathode 15 can be made of a material with a low work function, so that electrons of the cathode 15 can be more easily injected into a film layer (e.g., the electron transport unit 14 described in detail below) adjacent to the cathode 15, and thus, the electrons generated by the cathode 15 can be effectively migrated into the light-emitting layer 13 under the driving of an electric field to recombine with holes generated by the anode 11 to emit light.

[0090] In some examples, the material of the cathode 15 can be a metal material, a metal oxide, or a metal alloy, etc. The metal material can be, for example, aluminum (Al), silver (Ag), gold (Au), magnesium (Mg), calcium (Ca), ytterbium (Yb), indium (In), lithium (Li), potassium (K), sodium (Na), tin (Sn), titanium (Ti), lead (Pb), samarium (Sm), or yttrium (Y), etc. The metal oxide can be, for example, indium tin oxide (ITO) or indium zinc oxide (IZO), etc. The metal alloy can be, for example, a magnesium-silver alloy (Mg:Ag), a ytterbium-gold alloy (Yb:Au), a ytterbium-silver alloy (Yb:Ag), a lithium-aluminum alloy (Li:Al), or a lithium-calcium-magnesium alloy (Li:Ca:Al), etc. Alternatively, the material of the cathode 15 can be a stacked material, such as magnesium / aluminum (Mg / Al), magnesium / silver (Mg / Ag), aluminum / silver (Al / Ag), aluminum / gold (Al / Au), ytterbium / gold (Yb / Au), ytterbium / silver (Yb / Ag), calcium / magnesium (Ca / Mg), calcium / silver (Ca / Ag), barium / silver (Ba / Ag), etc.

[0091] In some examples, the light-emitting layer 13 is a quantum dot light-emitting layer. The material of the quantum dot light-emitting layer includes a quantum dot body and a ligand material disposed on the quantum dot body.

[0092] In some examples, the quantum dot body can include any one or more of a II-VI group quantum dot, a III-V group quantum dot, a IV-VI group quantum dot, a IV group quantum dot, a I-III-VI group quantum dot, a I-II-IV-VI group quantum dot, a core-shell quantum dot, and an ABX3 type perovskite quantum dot, in any combination.

[0093] In yet other examples, the quantum dot body can be other nanoscale materials, such as nanorods, nanosheets, etc. The composition of the other nanoscale materials can include at least one of CuInS2, CuInSe2, AgInS2, etc., but is not limited thereto.

[0094] In some examples, the ligand material can be selected from any one or more of a combination of organic acids, organic amines, organic phosphorus, and organic thiols, for example, the ligand material can be oleic acid, oleylamine, or dodecanethiol, etc.

[0095] In some embodiments, as shown in FIGS. 3 and 4, to improve the light emitting efficiency, the light emitting device 100 further comprises a hole transport unit 12, which is located on the side of the light emitting layer 13 close to the anode 11 and in contact with the light emitting layer 13. The hole transport unit 12, for example, comprises at least one of a hole injection layer (HIL), a hole transport layer (HTL), and an electron blocking layer (EBL).

[0096] In some embodiments, as shown in FIGS. 3 and 4, to improve the light emitting efficiency, the light emitting device 100 further comprises an electron transport unit 14, which is located on the side of the light emitting layer 13 close to the cathode 15 and in contact with the light emitting layer 13. The electron transport unit 14, for example, comprises at least one of an electron injection layer (EIL), an electron transport layer (ETL), and a hole blocking layer (EBL).

[0097] By setting the hole transport unit 12 and the electron transport unit 14, it is equivalent to setting a transition step between the anode 11 and the light emitting layer 13 and between the cathode 15 and the light emitting layer 13, which reduces the height of the potential barrier that the carriers need to overcome, so that the light emitting efficiency is higher.

[0098] Exemplarily, the material of the hole injection layer can be an organic material, for example, poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS); or the material of the hole injection layer can also be an inorganic oxide, for example, molybdenum oxide (MoO x ) and the like.

[0099] Exemplarily, the material of the hole transport layer can be an organic material, for example, poly(N-vinylcarbazole) (PVK), poly[(9,9-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butyphenyl)diphenylamine)] (TFB), N,N'-diphenyl-N,N'-di(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (TPD), or 4,4',4"-tris(N-carbazolyl)triphenylamine (TAPC) and the like; or the material of the hole injection layer can also be an inorganic oxide, for example, nickel oxide (NiO x ) or vanadium oxide (VO x ) and the like.

[0100] Exemplarily, the material of the electron transport layer can be zinc oxide (ZnO) or zinc magnesium oxide (ZnMgO), etc. Herein, the zinc oxide (ZnO) or zinc magnesium oxide (ZnMgO) can be nanoparticles or thin films prepared by a sputter process.

[0101] In some examples, the light-emitting device 100 can be classified into a normal light-emitting device and an inverted light-emitting device according to the type of the electrode in contact with the substrate (e.g., including the substrate 210 and the driving circuit layer 230).

[0102] As shown in FIG. 5A, when the electrode in contact with the substrate 210 is the anode 11, the light-emitting device 100 is a normal light-emitting device, in which the anode 11 in contact with the substrate 210 can realize the function of hole generation and injection. The structure of the normal light-emitting device, for example, includes the anode 11, the hole transport unit 12, the light-emitting layer 13, the electron transport unit 14, and the cathode 15 arranged in sequence in the direction away from the substrate 210.

[0103] As shown in FIG. 5B, when the electrode in contact with the substrate 210 is the cathode 15, the light-emitting device 100 is an inverted light-emitting device, in which the cathode 15 in contact with the substrate 210 can realize the function of electron generation and injection. The structure of the inverted light-emitting device, for example, includes the cathode 15, the electron transport unit 14, the light-emitting layer 13, the hole transport unit 12, and the anode 11 arranged in sequence in the direction away from the substrate 210.

[0104] Herein, the hole transport unit 12, for example, includes a hole injection layer and a hole transport layer. The electron transport unit 14, for example, includes an electron transport layer. For the exemplary description of the cathode, the electron transport layer, the light-emitting layer, the hole transport layer, the hole injection layer, and the anode, please refer to the foregoing part, which will not be described here again.

[0105] It should be noted that FIGS. 5A and 5B are schematic diagrams of the light-emitting substrate 200 after omitting the driving circuit layer 230.

[0106] In some implementations, the surface of the electron transport material (e.g., ZnO or ZnMgO) used in the electron transport layer of the QLED light-emitting device has a large number of vacancy defects, which interact with the hydrogen ions released in the acidic encapsulating glue (e.g., acrylic encapsulating glue), so that the QLED light-emitting device is positively aged under the action of the acidic encapsulating glue. Under this positive aging effect, the efficiency, conductivity, light-emitting morphology, and working life of the device are improved, to some extent, the efficiency and working life of the QLED light-emitting device are improved.

[0107] However, as described in the background, the QLED light-emitting device has poor stability in such a positive aging effect. Here, a possible cause of poor stability of the QLED light-emitting device in the positive aging effect is that the positive aging effect is less controllable. For example, the content of the acidic component in the acidic encapsulation glue is not easy to control, so that the amount of hydrogen ions released in the acidic encapsulation glue is also not easy to control. For another example, the time and intensity of the positive aging effect are in an uncontrollable state. For another example, in actual mass production of light-emitting devices, the influence of the acidic component in the acidic encapsulation glue may not be replicated, which also leads to poor controllability of the positive aging effect. In the case of poor controllability of the positive aging effect, as the storage time of the light-emitting device is prolonged, the light-emitting device itself has poor stability, the storage stability of the light-emitting device is difficult to guarantee, and sometimes efficiency roll-off and poor light-emitting appearance occur. Therefore, in practical applications, the method of using the positive aging effect to improve the performance of the QLED light-emitting device is difficult to effectively utilize.

[0108] In some implementations, the acidic component in the acidic encapsulation glue is relatively strong, and the positive aging effect occurs inside the light-emitting device. As the time of the positive aging effect continues, the acidic component in the acidic encapsulation glue may react with the material of the electron transport layer (for example, ZnO) and / or the material of the electrode (anode or cathode), corrode the appearance of the light-emitting device, and have a negative effect on the performance of the light-emitting device.

[0109] In some implementations, a blocking layer is inserted between the electron transport layer and the metal electrode to weaken the intensity of the positive aging effect. For example, an optical ZnO blocking layer is arranged between the electron transport layer and the metal electrode of the light-emitting device, which weakens the interaction between ZnO and acrylic acid, so that the performance and self-stability of the light-emitting device are improved. However, although this method improves the self-stability of the QLED light-emitting device, it inevitably weakens the performance improvement effect of the light-emitting device brought by the positive aging effect.

[0110] Based on this, some embodiments of the present disclosure provide a light-emitting device 100 to solve one or more of the above problems. As shown in FIGS. 6-8, the light-emitting device 100 further includes a first functional layer 14X and an auxiliary functional layer 16. The first functional layer 14X is located between the light-emitting layer 13 and the cathode 15. The auxiliary functional layer 16 is located on the side of the light-emitting layer 13 away from the anode 11.

[0111] For example, the auxiliary functional layer 16 is at least configured to transport hydrogen elements from the auxiliary functional layer 16 to the first functional layer 14X.

[0112] In some examples, the first functional layer 14X can be at least one of an electron injection layer (EIL), an electron transport layer (ETL), and a hole blocking layer (EBL). Here, for the understanding of the electron injection layer (EIL), the electron transport layer (ETL), and the hole blocking layer (EBL), reference can be made to the aforementioned exemplary description of the electron injection layer (EIL), the electron transport layer (ETL), and the hole blocking layer (EBL), which will not be repeated here.

[0113] In some examples, the first functional layer 14X can be an electron transport layer (ETL), and the material of the first functional layer 14X can be zinc oxide (ZnO) or zinc magnesium oxide (ZnMgO).

[0114] In some examples, as shown in FIGS. 11 and 12, the auxiliary functional layer 16 is located between the light emitting layer 13 and the cathode 15. In this case, as shown in FIG. 12, the auxiliary functional layer 16 can be located between the light emitting layer 13 and the first functional layer 14X; or as shown in FIG. 11, the auxiliary functional layer 16 can be located between the cathode 15 and the first functional layer 14X. In this case, the auxiliary functional layer 16 can be in contact with the first functional layer 14X, and the auxiliary functional layer 16 can directly transmit the hydrogen element to the first functional layer 14X.

[0115] In yet other examples, as shown in FIG. 6, the auxiliary functional layer 16 is located on the side of the cathode 15 away from the light emitting layer 13. In this case, the hydrogen element in the auxiliary functional layer 16 is transmitted to the first functional layer 14X via the cathode 15.

[0116] Here, the form of the hydrogen element transmitted from the auxiliary functional layer 16 to the first functional layer 14X is not limited. For example, the hydrogen element can include one or a combination of any number of hydrogen positive ions, neutral hydrogen atoms, and hydrogen negative ions. When the hydrogen element includes neutral hydrogen atoms, the form of the neutral hydrogen atoms includes, but is not limited to, radicals and the like. Moreover, the hydrogen element transmitted from the auxiliary functional layer 16 to the first functional layer 14X can be free hydrogen elements.

[0117] It can be understood that, by the above arrangement, in a first aspect, the hydrogen element can be transmitted from the auxiliary functional layer 16 to the first functional layer 14X, to play a positive aging role, so that the active sites (e.g., oxygen vacancy defects) on the material surface of the first functional layer 14X are occupied by the hydrogen element, so that the performance of the light emitting device 100 can be improved, where the improved performance includes at least one of efficiency, conductivity, light emitting pattern, and service life, for example. In a second aspect, after the active sites (e.g., oxygen vacancy defects) on the material surface of the first functional layer 14X are occupied by the hydrogen element, the influence of other atmospheres on the light emitting device 100 can be reduced, so that the controllability of the positive aging role can be improved, and the stability of the light emitting device 100 can be improved. In a third aspect, when the light emitting device 100 includes the auxiliary functional layer 16, the process of treating the light emitting device 100 by the acidic encapsulation glue included in some implementation modes can be omitted, so that the influence of the acid atmosphere on the pattern of the light emitting device 100 can be avoided. In a fourth aspect, the hydrogen element transmitted to the first functional layer 14X can act as a shallow donor in the first functional layer 14X, so that the carrier concentration of the first functional layer 14X can be improved, and the conductivity of the first functional layer 14X can be improved.

[0118] In order to make the description clearer, the state of the hydrogen element transmitted to the first functional layer 14X is exemplarily described below by taking the material of the first functional layer 14X as ZnO. When the material of the first functional layer 14X is ZnO, the hydrogen element transmitted to the first functional layer 14X can exist in the first functional layer 14X in a free form, or can enter the lattice between ZnO and be connected by a chemical bond to form Zn-H-O or Zn-O-H, etc., so that the hydrogen element constitutes part of the first functional layer 14X; in other words, the hydrogen element can act as a shallow donor in the ZnO material, so that the conductivity of the ZnO material can be improved.

[0119] Based on the above structure, in some embodiments, as shown in FIG. 1, the material of the encapsulation layer 240 includes a neutral organic material and / or an alkaline organic material.

[0120] In some examples, the encapsulation layer 240 includes a first inorganic encapsulation layer, a first organic encapsulation layer, and a second inorganic encapsulation layer arranged in sequence in a direction away from the light emitting device 100. In this case, the material of the first organic encapsulation layer includes the neutral organic material and / or the alkaline organic material described above.

[0121] Here, the neutral organic material is, for example, a neutral resin material. The alkaline organic material is, for example, an alkaline resin material. Exemplarily, the neutral resin material can be an epoxy resin or a polyurethane, etc.

[0122] It can be understood that the forward aging of the light emitting device 100 can be achieved by adding an active ingredient such as an acid (for example, acrylic acid) in the material of the encapsulation layer 240. In the case where the light emitting device 100 includes the auxiliary functional layer 16, the auxiliary functional layer 16 can be at least configured to transport hydrogen elements from the auxiliary functional layer 16 to the first functional layer 14X. Thus, it can not be necessary to add an acid (for example, acrylic acid) in the material of the encapsulation layer 240, and thus a neutral organic material and / or a basic organic material can be used to achieve the encapsulation of the light emitting substrate 200.

[0123] It should be noted that the source of the hydrogen elements transported from the auxiliary functional layer 16 to the first functional layer 14X is not limited here. For example, the hydrogen elements can include hydrogen elements contained in the material of the auxiliary functional layer 16; for another example, the hydrogen elements can include hydrogen elements generated under the action of the auxiliary functional layer 16.

[0124] The case where the hydrogen elements include hydrogen elements contained in the material of the auxiliary functional layer 16 will be described exemplarily below.

[0125] In some embodiments, in combination with FIG. 6, the auxiliary functional layer 16 includes a first auxiliary functional layer 161. The material of the first auxiliary functional layer 161 includes an insulating material. The insulating material contains hydrogen elements.

[0126] In some examples, the above-mentioned hydrogen elements contained in the first auxiliary functional layer 161 can be analyzed in situ by using a Fourier Transform infrared spectroscopy (FTIR) or a Secondary Ion Mass Spectrometer (SIMS) or the like to achieve qualitative or quantitative measurement of the hydrogen elements.

[0127] By virtue of the material of the first auxiliary functional layer 161 including an insulating material containing hydrogen elements, the hydrogen elements contained in the insulating material can be at least transported to the first functional layer 14X by diffusion, so that the forward aging can be achieved.

[0128] In some embodiments, as shown in FIG. 6, the first auxiliary functional layer 161 is disposed on the side of the cathode 15 away from the first functional layer 14X.

[0129] It should be understood that in the case where the first auxiliary functional layer 161 is disposed on the side of the cathode 15 away from the first functional layer 14X, the hydrogen elements in the first auxiliary functional layer 161 can be transported to the first functional layer 14X via the cathode 15.

[0130] It can be understood that, since the area where the cathode 15, the anode 11 and the film layer located between the two are located is the area for transporting carriers in the light-emitting device 100, in the case where the first auxiliary functional layer 161 is arranged on the side of the cathode 15 away from the first functional layer 14X, the first auxiliary functional layer 161 can be arranged outside the area for transporting carriers in the light-emitting device 100, the first auxiliary functional layer 161 can not affect the carrier transport performance of the light-emitting device 100, and thus the influence of the first auxiliary functional layer 161 on the photoelectric performance of the light-emitting device 100 can be reduced.

[0131] In some examples, the surface of the first auxiliary functional layer 161 close to the light-emitting layer 13 is a non-smooth surface, and thus the total reflection of the light emitted by the light-emitting layer 13 at the surface of the first auxiliary functional layer 161 close to the light-emitting layer 13 can be reduced, and thus the light extraction efficiency of the light-emitting device 100 can be improved.

[0132] In some embodiments, as shown in FIG. 7, the light-emitting device 100 further comprises an auxiliary cathode 17. The auxiliary cathode 17 is located on the side of the first auxiliary functional layer 161 away from the cathode 15 and is electrically connected with the cathode 15.

[0133] It should be understood that, when the auxiliary electrode 17 is electrically connected with the cathode 15, the electrons can be transported between the auxiliary electrode 17 and the cathode 15, and thus the electrons generated by the auxiliary electrode 17 can be transported to the light-emitting layer 13 through the cathode 15 under the action of the driving voltage. In this case, the electrons injected into the light-emitting layer 13 can include both the electrons generated by the cathode 15 and the electrons generated by the auxiliary cathode 17. Moreover, the insulating material contained in the first auxiliary functional layer 161 will not affect the electron transport between the auxiliary cathode 17 and the cathode 15.

[0134] It can be understood that, through the above arrangement, the distance between the first auxiliary functional layer 161 and the first functional layer 14X can be relatively small on the basis of ensuring the electron generation performance of the light-emitting device 100, and thus the diffusion effect of hydrogen elements can be improved.

[0135] In some embodiments, the auxiliary cathode 17 is electrically connected with the cathode 15 through a structure located outside the first auxiliary functional layer 161.

[0136] In some embodiments, as shown in FIG. 7, the first auxiliary functional layer 161 comprises a plurality of spaced-apart vias 1611, and the auxiliary cathode 17 is electrically connected with the cathode 15 through the plurality of vias 1611.

[0137] It should be understood that when the first auxiliary functional layer 161 includes a plurality of spaced-apart through holes 1611, the first auxiliary functional layer 161 can be a hollow structure, so that when the auxiliary cathode 17 is formed, the material of the auxiliary cathode 17 can be filled in the through holes to realize the electrical connection between the auxiliary cathode 17 and the cathode 15. At this time, the auxiliary cathode 17 can include a portion located on the side of the first auxiliary functional layer 161 away from the cathode 15, and a portion located in the plurality of through holes 1611.

[0138] Exemplarily, the plurality of spaced-apart through holes 1611 can be formed by a patterning process.

[0139] It can be understood that through the above arrangement, on the one hand, the path of the electrons generated by the auxiliary cathode 17 to the cathode 15 can be relatively short, so that the voltage drop between the auxiliary cathode 17 and the cathode 15 can be reduced, and the electron transport performance of the light-emitting device 100 can be improved to a certain extent. On the other hand, the electrical contact area between the auxiliary cathode 17 and the cathode 15 can be relatively large, so that the contact resistance between the auxiliary cathode 17 and the cathode 15 can be reduced to a certain extent.

[0140] In some embodiments, as shown in FIG. 7, the size L1 of the auxiliary cathode 17 along the first direction X is greater than or equal to the size L2 of the cathode 15 along the first direction X, that is, L1≥L2. The first direction X is the thickness direction of the substrate 210.

[0141] It can be understood that through the above arrangement, the thickness of the cathode 15 can be relatively thin, so that the hydrogen element can diffuse to the first functional layer 14X through the thinner cathode 15, so that the path of the hydrogen element from the first auxiliary functional layer 161 to the first functional layer 14X can be shorter, so that the transmission effect of the hydrogen element can be improved, and the effect of the positive aging effect can be improved.

[0142] In some embodiments, as shown in FIG. 7, the size L2 of the cathode 15 along the first direction X ranges from 10 nm to 50 nm. The size L1 of the auxiliary cathode 17 along the first direction X ranges from 10 nm to 100 nm. The first direction X is the thickness direction of the substrate.

[0143] Exemplarily, the size L2 of the cathode 15 along the first direction X can be 10 nm, 20 nm, 30 nm, 40 nm, or 50 nm, etc.

[0144] Exemplarily, the size L1 of the auxiliary cathode 17 along the first direction X can be 10 nm, 30 nm, 50 nm, 80 nm, or 100 nm, etc.

[0145] It can be understood that, through the above setting, the path of hydrogen element transmission from the first auxiliary functional layer 161 to the first functional layer 14X can be relatively short on the basis of ensuring the electron generation performance of the light emitting device 100, so that the transmission effect of hydrogen element can be improved, and the effect of positive aging can be improved.

[0146] In some embodiments, the light emitting substrate 200 further comprises a pixel defining layer 221. The pixel defining layer 221 is disposed on the substrate 210 and comprises a plurality of pixel openings Q. The plurality of light emitting devices 100 are correspondingly disposed in the plurality of pixel openings Q (as shown in FIG. 2). The cathode 15 is closer to the substrate 210 than the anode 11 (as shown in FIG. 3). Wherein, as shown in FIG. 8, the first auxiliary functional layers 161 of the plurality of light emitting devices 100 are connected as a common functional layer, and the common functional layer is disposed between the pixel defining layer 221 and the substrate 210.

[0147] Here, the first auxiliary functional layers 161 of the plurality of light emitting devices 100 are connected as a common functional layer, which can be understood as that the first auxiliary functional layers 161 of the plurality of light emitting devices 100 are in an integral layer communication structure; in some examples, the first auxiliary functional layers 161 of the plurality of light emitting devices 100 are in the same layer and same material, and are formed by one process.

[0148] It should be understood that when the pixel defining layer 221 comprises a plurality of pixel openings Q, and the plurality of light emitting devices 100 are correspondingly disposed in the plurality of pixel openings Q, the pixel defining layer 221 can be configured to define the pixel openings Q for forming the light emitting devices 100. In this way, the light emitted by the light emitting device 100 can be emitted from the corresponding sub-pixel area, and color crosstalk can be avoided.

[0149] In some embodiments, as shown in FIG. 8, the common functional layer comprises a plurality of connection vias 1612, and the cathode 15 is coupled with the pixel driving circuit 231 (see FIG. 2) through the connection vias 1612. For example, the cathode 15 can be connected with the source or drain of the TFT in the pixel driving circuit 231 through the connection vias 1612, so that the transmission of the driving current can be realized.

[0150] It can be understood that, through the above setting, the light emitting device 100 is an inverted light emitting device, so that the first auxiliary functional layer 161 can be located between the substrate 210 and the cathode 15; in this way, the plurality of first auxiliary functional layers 161 of the plurality of light emitting devices 100 can be connected as a common functional layer, so that the process of forming the plurality of first auxiliary functional layers 161 of the plurality of light emitting devices 100 can be simplified, and the preparation method of the light emitting substrate 200 is simplified.

[0151] In some embodiments, the material of the first auxiliary functional layer 161 comprises one or any combination of silicon nitride (SiNx), silicon oxynitride (SiONx), and silicon oxide (SiOx).

[0152] It should be understood that silicon nitride (SiNx), silicon oxynitride (SiONx), and silicon oxide (SiOx) belong to transparent insulating materials.

[0153] Exemplarily, when the material of the first auxiliary functional layer 161 comprises one or any combination of silicon nitride, silicon oxynitride, and silicon oxide, and the hydrogen element is analyzed in-situ by FTIR, the content of the hydrogen element can be calculated by measuring the characteristic peaks of N-H bonds and Si-H bonds in the material of the first auxiliary functional layer 161.

[0154] In some examples, when the material of the first auxiliary functional layer 161 comprises one or any combination of silicon nitride, silicon oxynitride, and silicon oxide, the process for forming the first auxiliary functional layer 161 is plasma enhanced chemical vapor deposition (PECVD), the Si source used is SiH4, and the N source used is NH3, that is, both the Si source and the N source contain hydrogen elements, so that the first auxiliary functional layer 161 formed will have residual hydrogen elements, which can simplify the process of introducing hydrogen elements into the first auxiliary functional layer 161 and simplify the formation process of the first auxiliary functional layer 161.

[0155] It can be understood that through the above arrangement, the formation process of the first auxiliary functional layer 161 can be simplified on the basis of realizing the positive aging effect. Moreover, the above-mentioned materials will not react with the material of the electron transport layer (for example, ZnO) and / or the material of the electrode (anode 11 or cathode 15), and the influence on the morphology of the light-emitting device 100 can be avoided.

[0156] In some embodiments, when the material of the first auxiliary functional layer 161 comprises one or any combination of silicon nitride, silicon oxynitride, and silicon oxide, the first auxiliary functional layer 161 further comprises hydrogen elements, and the atomic percentage of the hydrogen elements in the first auxiliary functional layer 161 is greater than 0 and less than or equal to 30%.

[0157] Exemplarily, the atomic percentage of the hydrogen elements in the first auxiliary functional layer 161 can be 0.1%, 3%, 5%, 7%, 9%, 11%, 13%, 15%, 17%, 19%, 21%, 23%, 25%, 27%, 29%, or 30%, etc.

[0158] Here, the atomic percentage of the hydrogen elements in the first auxiliary functional layer 161 can be understood as the percentage of hydrogen atoms in all atoms of the first auxiliary functional layer 161.

[0159] Exemplarily, a secondary ion mass spectrometer (SIMS) or the like can be employed to analyze the first auxiliary functional layer 161 of the light emitting device 210 in the light emitting substrate 200 in-situ to obtain the atomic percentage of hydrogen in the first auxiliary functional layer 161.

[0160] It can be understood that the hydrogen in the first auxiliary functional layer 161 can fill the oxygen vacancies in the first functional layer 14X. As the light emitting device 100 continues to work, the oxygen vacancies can gradually increase, or the hydrogen filling the oxygen vacancies can gradually lose. Therefore, through the above arrangement, the hydrogen in the material of the first auxiliary functional layer 161 can continuously supplement and fill the oxygen vacancies, so that the positive aging effect can be achieved, and the stability of the light emitting device 100 can be improved.

[0161] In some embodiments, the positive aging effect of the first auxiliary functional layer 161 containing silicon nitride (SiNx) and the positive aging effect of the acrylic encapsulation glue are compared by using single electron devices. Here, the single electron device A, the single electron device B and the single electron device D each include two aluminum electrodes and an electron transport layer (material: ZnO) between the two aluminum electrodes, and the single electron device C includes two aluminum electrodes, an electron transport layer (material: ZnO) between the two aluminum electrodes, and a first auxiliary functional layer 161 (material including SiNx) on the side of one of the aluminum electrodes away from the electron transport layer. Moreover, the substrate containing the single electron device A is encapsulated with acrylic encapsulation glue; the substrate containing the single electron device B, the substrate containing the single electron device C and the substrate containing the single electron device D are encapsulated with acrylic encapsulation glue.

[0162] FIG. 9 is a graph of the current density of the single electron device A and the single electron device B varying with voltage. As shown in FIG. 9, the current density of the single electron device A is higher, and the current density of the single electron device B is lower, which indicates that in the atmosphere of the acrylic encapsulation glue, the positive aging effect is achieved, and the conductivity of the electron transport layer is relatively high.

[0163] FIG. 10 is a graph of the current density of the single electron device C and the single electron device D varying with voltage. As shown in FIG. 10, the current density of the single electron device C is higher, and the current density of the single electron device D is lower, which indicates that when the single electron device includes the first auxiliary functional layer 161, the same effect as the acrylic encapsulation glue can be achieved, the positive aging effect is achieved, and the conductivity of the electron transport layer is relatively high.

[0164] In some embodiments, the material of the first auxiliary functional layer 161 includes an insulating polymer material and a protonic acid.

[0165] Exemplarily, the insulating polymer material can be polymethyl methacrylate or polytetrafluoroethylene, etc.

[0166] Exemplarily, the protic acid can be acrylic acid.

[0167] Exemplarily, in the case that the material of the first auxiliary functional layer 161 comprises the insulating polymer material and the protic acid, the concentration of hydrogen ions can be tested to obtain the content of hydrogen elements in the first auxiliary functional layer 161.

[0168] It can be understood that, by the setting that the material of the first auxiliary functional layer 161 comprises the insulating polymer material, the insulating polymer material can serve as the substrate of the first auxiliary functional layer 161, and by the setting that the material of the first auxiliary functional layer 161 comprises the protic acid, the material of the first auxiliary functional layer 161 can contain hydrogen elements, so that the hydrogen elements can be transmitted from the auxiliary functional layer 16 to the first functional layer 14X to achieve the positive aging effect.

[0169] In some embodiments, in the case that the material of the first auxiliary functional layer 161 comprises the insulating polymer material and the protic acid, the molar ratio of the protic acid and the insulating polymer material ranges from 2.5:10 to 3.5:10.

[0170] Exemplarily, the molar ratio of the protic acid and the insulating polymer material can be 2.5:10, 2.7:10, 2.9:10, 3.1:10, 3.2:10 or 3.5:10, etc.

[0171] It can be understood that, on the one hand, by the above setting, the hydrogen elements contained in the material of the first auxiliary functional layer 161 are relatively more, so that, as described above, the hydrogen elements in the material of the first auxiliary functional layer 161 can be continuously supplemented and filled into the oxygen vacancies, so that the positive aging effect can be achieved and the stability of the light-emitting device 100 can be improved. On the other hand, by the above setting, the content of the protic acid in the material of the first auxiliary functional layer 161 can be within a suitable range, so that the influence of the protic acid on the morphology of the light-emitting device can be reduced.

[0172] In some embodiments, the material of the first auxiliary functional layer 161 comprises a protic organic molecular cage.

[0173] Here, the protic organic molecular cage refers to an organic molecular cage containing protons (i.e., hydrogen elements, such as hydrogen ions). The organic molecular cage is an organic material with an internal cavity. In some examples, the protons can be combined with other atoms or molecules in the organic molecular cage to form the protic organic molecular cage.

[0174] It can be understood that, by the above setting, the hydrogen elements can be contained in the material of the first auxiliary functional layer 161, so that the hydrogen elements can be transmitted from the auxiliary functional layer 16 to the first functional layer 14X to achieve the positive aging effect.

[0175] In some embodiments, the atomic percentage of hydrogen in the first functional layer 14X is 1% to 30%.

[0176] For example, the atomic percentage of hydrogen in the first functional layer 14X can be 1%, 8%, 15%, 24%, or 30%, etc.

[0177] Here, the atomic percentage of hydrogen in the first functional layer 14X can be understood as the percentage of hydrogen atoms in all atoms of the first functional layer 14X.

[0178] In some examples, the atomic percentage of hydrogen in the first functional layer 14X of the light emitting device 210 in the light emitting substrate 200 can be obtained by in-situ analysis using a secondary ion mass spectrometer (SIMS) or the like.

[0179] It can be understood that, by the above arrangement, the hydrogen content of the first functional layer 14X can be within a suitable range, and a strong positive aging effect can be achieved, so that the performance of the light emitting device 100 can be improved. Here, the improved performance includes at least one of efficiency, conductivity, light emitting pattern, and working life, etc.

[0180] In some embodiments, as shown in FIG. 6, the size L0 of the first auxiliary functional layer 161 along the first direction X is in the range of 550 nm to 1100 nm. The first direction X is the thickness direction of the substrate.

[0181] For example, the size L0 of the first auxiliary functional layer 161 along the first direction X can be 550 nm, 600 nm, 650 nm, 750 nm, 850 nm, 950 nm, 1000 nm, or 1100 nm, etc.

[0182] For example, when the light emitting device 100 is used to emit red light, the size L0 of the first auxiliary functional layer 161 along the first direction X can be in the range of 600 nm to 1000 nm, for example, 600 nm, 700 nm, 750 nm, 800 nm, 900 nm, or 1000 nm, etc. Preferably, the size L0 of the first auxiliary functional layer 161 along the first direction X can be 1000 nm.

[0183] For example, when the light emitting device 100 is used to emit green light or blue light, the size L0 of the first auxiliary functional layer 161 along the first direction X can be in the range of 800 nm to 1000 nm, for example, 800 nm, 840 nm, 880 nm, 920 nm, 960 nm, or 1000 nm, etc. Preferably, the size L0 of the first auxiliary functional layer 161 along the first direction X can be 1000 nm.

[0184] It should be noted that the above size range includes the case within the range as set forth and the case within the range similar to the range as set forth, which is within an acceptable deviation range, wherein the acceptable deviation range can be determined as by those of ordinary skill in the art taking into account the error related to the measurement of the size (i.e., the limitation of the measurement system). For example, the acceptable deviation range can be within a deviation of ±50 nm; in other words, the size L0 of the first auxiliary functional layer 161 along the first direction X should fall within the range of the size L0 of the first auxiliary functional layer 161 along the first direction X of the present disclosure both within the range as set forth and within ±50 nm of the range as set forth.

[0185] It can be understood that when the size L0 of the first auxiliary functional layer 161 along the first direction X is small (e.g., less than 550 nm), the hydrogen element content of the first auxiliary functional layer 161 can be less, which can affect the improvement effect of the positive aging effect on the performance of the light-emitting device 100; when the size L0 of the first auxiliary functional layer 161 along the first direction X is large (e.g., greater than 1100 nm), the overall thickness of the light-emitting device 100 can be increased, and in the case where the light-emitting device 100 includes the auxiliary cathode 17, the carriers generated by the auxiliary cathode 17 need to pass through the thicker first auxiliary functional layer 161 to reach the first functional layer 14X, which can affect the transmission speed of the carriers, thereby affecting the light-emitting efficiency of the light-emitting device 100. Therefore, by the above setting, the size L0 of the first auxiliary functional layer 161 along the first direction X can be within a suitable range, a stronger positive aging effect can be achieved, the overall thickness of the light-emitting device 100 can be within a suitable range, and the light-emitting efficiency of the light-emitting device 100 can be improved.

[0186] In some embodiments, in combination with FIGS. 6 and 7, the ratio of the size L0 of the first auxiliary functional layer 161 along the first direction X to the size L2 of the cathode 15 along the first direction X ranges from 5 to 110. The first direction X is the thickness direction of the substrate.

[0187] For example, the ratio of the size L0 of the first auxiliary functional layer 161 along the first direction to the size L2 of the cathode 15 along the first direction X can be 5, 5.5, 10, 20, 30, 40, 50, 60, 70, 80, 90, 100, or 110, etc.

[0188] It can be understood that by the above setting, the size L2 of the cathode 15 along the first direction X can be relatively small on the basis of ensuring the electron generation performance of the light-emitting device 100, the hydrogen element can be easily transmitted from the first auxiliary functional layer 161 to the first functional layer 14X, and thus the transmission effect of the hydrogen element can be improved, and the effect of the positive aging effect can be improved.

[0189] In some examples, the first auxiliary functional layer 161 can be an opaque film layer, and the material of the first auxiliary functional layer 161 is an opaque insulating material; at this time, the first auxiliary functional layer 161 can be arranged on the non-light-emitting side of the light-emitting device 100.

[0190] In yet some examples, the first auxiliary functional layer 161 can be a transparent film layer, and the material of the first auxiliary functional layer 161 is a transparent insulating material; at this time, the first auxiliary functional layer 161 can be arranged on the light-emitting side of the light-emitting device 100.

[0191] In some embodiments, the light transmittance of the first auxiliary functional layer 161 is greater than or equal to 80%.

[0192] Exemplarily, the light transmittance of the first auxiliary functional layer 161 can be 80%, 85%, 90%, 95%, 98% or 100%, etc.

[0193] It can be understood that, through the above arrangement, the light transmittance of the first auxiliary functional layer 161 can be relatively high, so as to improve the light-emitting efficiency of the light-emitting device 100. Moreover, in the case where the first auxiliary functional layer 161 includes a plurality of spaced-apart vias 1611, the first auxiliary functional layer 161 in a hollow structure and having a high light transmittance can be designed in a pattern to form a periodic structure, so that the light-emitting side of the light-emitting device 100 forms a periodic photonic crystal structure or a periodic microlens structure, and the light-emitting efficiency of the light-emitting device 100 can be improved.

[0194] The above is an exemplary description of the case where the hydrogen element includes the hydrogen element contained in the material of the auxiliary functional layer 16, and the case where the hydrogen element is generated under the action of the auxiliary functional layer 16 will be exemplarily described below.

[0195] In some embodiments, as shown in FIGS. 11 and 12, the auxiliary functional layer 16 of the light-emitting device 100 includes a second auxiliary functional layer 162. The second auxiliary functional layer 162 is arranged between the cathode 15 and the light-emitting layer 13. The material of the second auxiliary functional layer 162 includes a nano-catalyst material configured to dissociate hydrogen in a hydrogen atmosphere under a preset condition.

[0196] Exemplarily, the size of the second auxiliary functional layer 162 along the first direction X can be 30 nm to 50 nm, for example, 30 nm, 40 nm, 45 nm or 50 nm, etc.

[0197] In some examples, as shown in FIG. 11, the second auxiliary functional layer 162 is arranged between the cathode 15 and the first functional layer 14X.

[0198] In yet some examples, as shown in FIG. 12, the second auxiliary functional layer 162 is arranged between the first functional layer 14X and the light-emitting layer 13.

[0199] It should be understood that the nanocatalyst material has carrier transport performance, and therefore the second auxiliary functional layer 162 can be arranged between the cathode 15 and the light-emitting layer 13.

[0200] It can be understood that, on one hand, as shown in FIG. 13, the nanocatalyst material (for example, platinum Pt) can dissociate hydrogen in a hydrogen atmosphere to generate at least one of neutral hydrogen atoms, hydrogen positive ions and hydrogen negative ions, and then the hydrogen element can be transported from the second auxiliary functional layer 162 to the first functional layer 14X to fill the oxygen vacancy defects of the electron transport material in the first functional layer 14X, thereby achieving the effect of positive aging. On the other hand, by the above arrangement, the controllability of the positive aging effect can be improved by controlling the hydrogen atmosphere treatment intensity, for example, by controlling the flow rate and time of hydrogen input, so that the stability of the light-emitting device 100 can be improved.

[0201] It should be noted that in FIG. 13, H-H represents a hydrogen molecule, represents a hydrogen positive ion, a neutral hydrogen atom or a hydrogen negative ion.

[0202] In some embodiments, the nanocatalyst material includes one or any combination of a metal, a metal oxide and a metal complex.

[0203] In some examples, when the nanocatalyst material includes a metal, the metal can be platinum (Pt) or nickel (Ni), etc.

[0204] In some examples, when the nanocatalyst material includes a metal oxide, the metal oxide can be a photocatalyst titanium dioxide.

[0205] In some examples, when the nanocatalyst material includes a metal complex, the metal complex can be a metallocene compound, for example, an iron complex or a cobalt complex, etc.

[0206] It can be understood that the metal, metal oxide and metal complex nanomaterials can effectively adsorb hydrogen molecules and dissociate them to generate hydrogen elements, and the generated hydrogen elements can be transported from the second auxiliary functional layer 162 to the first functional layer 14X to achieve the effect of positive aging; moreover, the metal, metal oxide and metal complex nanomaterials have excellent electrical conductivity and chemical stability, and will not have a negative effect on the light-emitting device 100, thereby improving the stability of the light-emitting device 100.

[0207] In some embodiments, as shown in FIG. 11, the size L3 of the second auxiliary functional layer 162 along the first direction X ranges from 30 nm to 80 nm. The first direction X is the thickness direction of the substrate 210.

[0208] Exemplarily, the size L3 of the second auxiliary functional layer 162 along the first direction X can be 30 nm, 40 nm, 50 nm, 60 nm, 70 nm, or 80 nm, etc.

[0209] It can be understood that when the size L3 of the second auxiliary functional layer 162 along the first direction X is small (for example, less than 30 nm), the content of the nano-catalyst material of the second auxiliary functional layer 162 can be low, the amount of dissociated hydrogen gas can be small, and the effect of the positive aging on the performance improvement of the light-emitting device 100 can be affected. When the size L3 of the second auxiliary functional layer 162 along the first direction X is large (for example, greater than 80 nm), the amount of nano-catalyst material in the second auxiliary functional layer 162 can be greater than the amount required for dissociating hydrogen gas, and the overall thickness of the light-emitting device 100 can be thick. Therefore, by the above setting, the thickness of the second auxiliary functional layer 162 can be within a suitable range, the effect of the positive aging on the performance improvement of the light-emitting device 100 can be improved, and the overall thickness of the light-emitting device 100 can be within a suitable range.

[0210] In some embodiments, the auxiliary functional layer 16 includes: a first auxiliary functional layer 161, and / or a second auxiliary functional layer 162. The first auxiliary functional layer 161 is arranged on the side of the cathode 15 away from the first functional layer 14X. The material of the first auxiliary functional layer 161 includes an insulating material. The insulating material contains hydrogen elements. The second auxiliary functional layer 162 is arranged between the cathode 15 and the light-emitting layer 13. The material of the second auxiliary functional layer 162 includes a nano-catalyst material, and the nano-catalyst material is configured to dissociate hydrogen gas in a hydrogen atmosphere under a preset condition.

[0211] FIG. 18 is a flowchart of a preparation method of a light-emitting substrate 200 provided by some embodiments of the present disclosure. It should be understood that the operations shown in the following preparation method are not exhaustive, and other operations can also be performed before, after or between any of the operations shown.

[0212] In yet another aspect, some embodiments of the present disclosure provide a preparation method of a light-emitting substrate 200, as shown in FIG. 18, the preparation method includes S1-S3.

[0213] S1: forming a substrate 210.

[0214] S2: forming a plurality of light-emitting devices 100 on one side of the substrate 210. The light-emitting device 100 includes a cathode 15, an anode 11, a light-emitting layer 13, a first functional layer 14X, and an auxiliary functional layer 16. The cathode 15 and the anode 11 are oppositely arranged. The light-emitting layer 13 is located between the cathode 15 and the anode 11. The first functional layer 14X is located between the light-emitting layer 13 and the cathode 15. The auxiliary functional layer 16 is located on the side of the light-emitting layer 13 away from the anode 11.

[0215] S3: forming an encapsulation layer 240 on the side of the plurality of light emitting devices 100 away from the substrate 210.

[0216] The preparation method of the light emitting substrate can achieve the same beneficial effects as the light emitting substrate, which will not be repeated here.

[0217] In some embodiments, the auxiliary functional layer 16 includes a first auxiliary functional layer 161 disposed on the side of the cathode 15 away from the first functional layer 14X. The material of the first auxiliary functional layer 161 includes an insulating material. The insulating material contains hydrogen elements.

[0218] The preparation method of the light emitting substrate 200 further includes S2A.

[0219] S2A: After forming the plurality of light emitting devices 100, performing a heating treatment on the plurality of light emitting devices 100.

[0220] It can be understood that the heating treatment can accelerate the movement of hydrogen elements in the first auxiliary functional layer 161 to the first functional layer 14X. For example, in the case where the material of the first auxiliary functional layer 161 includes an insulating polymer material and a protonic acid, the hydrogen ions in the protonic acid move faster under the effect of heat. In this way, the diffusion speed of hydrogen elements to the first functional layer 14X can be improved, and the positive aging effect can be achieved in a shorter time. In this way, the controllability of the positive aging process can be improved, and the stability of the light emitting device 100 can be improved. Moreover, in the case where the material in the first auxiliary functional layer 161 is one or any combination of silicon nitride, silicon oxynitride, and silicon oxide, the N-H bond and / or Si-H bond in the material can be broken under heating to form hydrogen elements.

[0221] In some embodiments, the processing temperature range of the heating treatment is 80°C-120°C.

[0222] Exemplarily, the processing temperature of the heating treatment can be 80°C, 90°C, 100°C, 110°C, or 120°C, etc.

[0223] In some embodiments, the processing time range of the heating treatment is 10min-120min.

[0224] Exemplarily, the processing time of the heating treatment can be 10min, 32min, 55min, 76min, 98min, or 120min, etc.

[0225] Understandably, when the heat treatment temperature is low (e.g., below 80°C) or the heat treatment time is short (e.g., less than 0.8 h), the impact on the generation and movement of hydrogen in the first auxiliary functional layer 161 may be small, potentially affecting the performance improvement effect of the positive aging process on the light-emitting device 100. Conversely, when the heat treatment temperature is high (e.g., above 120°C) or the heat treatment time is long (e.g., above 12 h), it may adversely affect the material of the light-emitting device 100. Therefore, by setting the above parameters, the heat treatment temperature and / or time can be kept within a suitable range, ensuring the performance improvement effect of the positive aging process on the light-emitting device 100 while avoiding the impact of the heat treatment on the material of the light-emitting device 100.

[0226] In some embodiments, S2 includes S2.1a to S2.4a.

[0227] S2.1a: An anode 11 is formed on one side of the substrate 210.

[0228] S2.2a: A light-emitting layer 13 is formed on the side of the anode 11 away from the substrate 210.

[0229] S2.3a: A first functional layer 14X is formed on the side of the light-emitting layer 13 away from the anode 11.

[0230] S2.4a: A cathode 15 is formed on the side of the first functional layer 14X away from the light-emitting layer 13.

[0231] It should be understood that when S2 includes S2.1a to S2.4a, the light-emitting device 100 is an upright light-emitting device.

[0232] In some other embodiments, S2 includes S2.1b to S2.4b.

[0233] S2.1b: A cathode 15 is formed on one side of the substrate 210.

[0234] S2.2b: A first functional layer 14X is formed on the side of the cathode 15 away from the substrate 210.

[0235] S2.3b: A light-emitting layer 13 is formed on the side of the first functional layer 14X away from the cathode 15.

[0236] S2.4b: An anode 11 is formed on the side of the light-emitting layer 13 away from the first functional layer 14X.

[0237] It should be understood that when S2 includes S2.1b to S2.4b, the light-emitting device 100 is an inverted light-emitting device.

[0238] In some embodiments, S2 further includes S2B.

[0239] S2B: forming the auxiliary functional layer 16 on a side of the anode 11 distal to the light-emitting layer 13.

[0240] Exemplarily, in the case that the auxiliary functional layer 16 comprises the first auxiliary functional layer 161, S2B comprises S2B.1.

[0241] S2B.1: forming the first auxiliary functional layer 161 on a side of the cathode 15 distal to the first functional layer 14X.

[0242] Exemplarily, in the case that S2 comprises S2.1a-S2.4a, S2B.1 can be performed after S2.4a and before S3. Further, in the case that S2 comprises S2.1a-S2.4a and further comprises S2A, S2B.1 can be performed after S2.4a and before S2A. In the case that S2 comprises S2.1b-S2.4b, S2B.1 can be performed after S1 and before S2.1b.

[0243] Exemplarily, in the case that the auxiliary functional layer 16 comprises the first auxiliary functional layer 161 and the light-emitting device 100 is a normal light-emitting device, S2 further comprises S2.5a.

[0244] S2.5a: forming the auxiliary cathode 17 on a side of the first auxiliary functional layer 161 distal to the cathode 15 after S2B.1 and before S3.

[0245] In some embodiments, the method of preparing the light-emitting substrate 200 further comprises S2C.

[0246] S2C: performing hydrogen ion implantation on the first auxiliary functional layer 161.

[0247] It should be understood that S2C can be performed after S2B.1.

[0248] In some examples, the hydrogen ion implantation on the first auxiliary functional layer 161 can be performed in a hydrogen plasma atmosphere so that the atomic percentage of hydrogen in the first auxiliary functional layer 161 reaches 50%.

[0249] It can be understood that, by performing hydrogen ion implantation on the first auxiliary functional layer 161, the content of hydrogen in the first auxiliary functional layer 161 can be increased, and thus the amount of hydrogen transferred from the first auxiliary functional layer 161 to the first functional layer 14X can be increased, and the effect of the positive aging can be improved.

[0250] In some embodiments, the method of preparing the light-emitting substrate 200 further comprises S2D.

[0251] S2D: performing hydrogen ion implantation on the first functional layer 14X.

[0252] Exemplarily, in the case that S2 comprises S2.1a-S2.4a, S2D can be performed after S2.4a and before S2B.1.

[0253] Exemplarily, the first functional layer 14X can be treated in a hydrogen plasma atmosphere in a manner of hydrogen ion implantation. The treatment time can be 1 min-5 min, for example, 1 min, 2 min, 3 min, 4 min or 5 min, etc.

[0254] It can be understood that, by hydrogen ion implantation on the first functional layer 14X, the hydrogen element content of the first functional layer 14X can be increased, so that the amount of hydrogen elements in the first functional layer 14X can be increased, and the effect of the positive aging effect can be improved.

[0255] In some embodiments, the auxiliary functional layer 16 comprises a second auxiliary functional layer 162 disposed between the cathode 15 and the light-emitting layer 13. The material of the second auxiliary functional layer 162 comprises a nano-catalyst material. The nano-catalyst material is configured to dissociate hydrogen in a hydrogen atmosphere under a preset condition.

[0256] The preparation method of the light-emitting substrate 200 further comprises: forming the first functional layer 14X and the second auxiliary functional layer 162. The first functional layer 14X and the second auxiliary functional layer 162 are treated in a hydrogen atmosphere.

[0257] It can be understood that, by the above arrangement, the hydrogen in the hydrogen atmosphere can be dissociated under the action of the nano-catalyst material to generate hydrogen elements, and the hydrogen elements can be diffused into the first functional layer 14X to form the positive aging effect. Moreover, when the positive aging effect is formed in this way, the controllability of the positive aging effect can be improved by controlling the hydrogen atmosphere treatment intensity, for example, by controlling the flow rate and time of hydrogen input, so that the stability of the light-emitting device 100 can be improved.

[0258] In order to objectively evaluate the technical effects of the embodiments of the present disclosure, the technical solutions provided by the present disclosure will be described in detail by the following experimental examples and comparative examples.

[0259]

Example 1

[0260] The following embodiments prepare a light-emitting substrate 200, which comprises a light-emitting device 100, and the structure of the light-emitting device 100 is shown in FIG. 14. The preparation method comprises R1-R8.

[0261] R1: Depositing the material of the anode 11 on the substrate 210 to form the anode 11.

[0262] Exemplarily, before R1, it further comprises forming a patterned pixel defining layer on the substrate 210, and the pixel defining layer comprises a plurality of pixel openings.

[0263] R2: Depositing hole injection layer 121 material on the side of anode 11 away from substrate 210, forming hole injection layer 121.

[0264] R3: Depositing hole transport layer 122 material on the side of hole injection layer 121 away from anode 11, forming hole transport layer 122.

[0265] R4: Depositing quantum dot light emitting layer 13 material on the side of hole transport layer 122 away from hole injection layer 121, and patterning the deposited quantum dot light emitting layer 13 material using a photolithography process.

[0266] R5: Depositing zinc oxide or zinc magnesium oxide on the side of light emitting layer 13 away from hole transport layer 122, forming first functional layer 14X.

[0267] Exemplarily, first functional layer 14X can be zinc oxide nanoparticles or zinc magnesium oxide nanoparticles.

[0268] Exemplarily, the process of forming first functional layer 14X can be a sputtering process.

[0269] R6: Forming cathode 15 on the side of first functional layer 14X away from light emitting layer 13.

[0270] Exemplarily, the process of forming cathode 15 can be a magnetron sputtering process, in which case the material of cathode 15 can be IZO.

[0271] Exemplarily, the process of forming cathode 15 can be an evaporation process, in which case the material of cathode 15 can be aluminum (Al), silver (Ag), or magnesium silver alloy (Mg:Ag).

[0272] Exemplarily, the thickness of cathode 15 can be 10 nm to 100 nm, such as 10 nm, 20 nm, 40 nm, 60 nm, 70 nm, 90 nm, or 100 nm, etc.

[0273] R7: Depositing material of first auxiliary functional layer 161 on the side of cathode 15 away from first functional layer 14X using a low-temperature chemical vapor deposition (CVD) process, forming first auxiliary functional layer 161. The material of first auxiliary functional layer 161 includes at least one of silicon nitride (SiN x ), silicon oxynitride (SiON x ), and silicon oxide (SiO x ).

[0274] R8: The light emitting device is treated by hydrogen plasma treatment to increase the hydrogen element content in the first functional layer 14X and the first auxiliary functional layer 161.

[0275] Example 2

[0276] The following example prepares a light emitting substrate 200 including a light emitting device 100, which has a structure as shown in FIG. 14. The preparation method includes M1-M8.

[0277] M1: Forming the anode 11.

[0278] M2: Forming the hole injection layer 121.

[0279] M3: Forming the hole transport layer 122.

[0280] M4: Forming the light emitting layer 13.

[0281] M5: Forming the first functional layer 14X.

[0282] M6: Forming the cathode 15.

[0283] M7: Treating the light emitting device 100 by hydrogen plasma treatment to increase the hydrogen element content in the first functional layer 14X.

[0284] Exemplarily, the time of the hydrogen plasma treatment can be 1 min-5 min, for example, 1 min, 2 min, 3 min, 4 min or 5 min, etc.

[0285] M8: Forming the first auxiliary functional layer 161.

[0286] Here, as to the understanding of M1 forming the anode 11, M2 forming the hole injection layer 121, M3 forming the hole transport layer 122, M4 forming the light emitting layer 13, M5 forming the first functional layer 14X, M6 forming the cathode 15 and M8 forming the first auxiliary functional layer 161, it can be referred to the foregoing description of R1 forming the anode 11, R2 forming the hole injection layer 121, R3 forming the hole transport layer 122, R4 forming the light emitting layer 13, R5 forming the first functional layer 14X, R6 forming the cathode 15 and R7 forming the first auxiliary functional layer 161, which will not be repeated here.

[0287] Example 3

[0288] The following example prepares a light emitting substrate 200 including a light emitting device 100, which has a structure as shown in FIG. 15. The preparation method includes N1-N9.

[0289] N1: Forming the anode 11.

[0290] N2: Forming a hole injection layer 121.

[0291] N3: Forming a hole transport layer 122.

[0292] N4: Forming a light-emitting layer 13.

[0293] N5: Forming a first functional layer 14X.

[0294] N6: Forming a cathode 15.

[0295] Exemplarily, the thickness of the cathode 15 can be 10nm-20nm, for example, 10nm, 12nm, 14nm, 16nm, 18nm, or 20nm, etc.

[0296] N7: Forming a first initial auxiliary functional layer.

[0297] N8: Using a photolithography process, the first initial auxiliary functional layer is patterned to form a first auxiliary functional layer 161 and a plurality of vias 1611, exposing part of the cathode 15, forming a hollow structure.

[0298] N9: Forming an auxiliary cathode 17; depositing the material of the auxiliary cathode 17 on the first auxiliary functional layer 161, and the material of the auxiliary cathode 17 is filled in the plurality of vias 1611.

[0299] Exemplarily, the thickness of the auxiliary cathode 17 can be 10nm-100nm, for example, 10nm, 20nm, 40nm, 60nm, 70nm, 90nm or 100nm, etc.

[0300] Here, regarding the understanding of N1 forming an anode 11, N2 forming a hole injection layer 121, N3 forming a hole transport layer 122, N4 forming a light-emitting layer 13, N5 forming a first functional layer 14X, N6 forming a cathode 15, and N7 forming a first initial auxiliary functional layer, please refer to the description of R1 forming an anode 11, R2 forming a hole injection layer 121, R3 forming a hole transport layer 122, R4 forming a light-emitting layer 13, R5 forming a first functional layer 14X, R6 forming a cathode 15, and R7 forming a first auxiliary functional layer 161 in the foregoing part, which will not be repeated here.

[0301]

Embodiment 4

[0302] The following embodiment prepares a light-emitting substrate 200, which includes a light-emitting device 100, and the structure of the light-emitting device 100 is shown in FIG. 15. The preparation method includes P1-P10.

[0303] P1: Forming an anode 11.

[0304] P2: Forming a hole injection layer 121.

[0305] P3: Forming a hole transport layer 122.

[0306] P4: Forming a light-emitting layer 13.

[0307] P5: Forming a first functional layer 14X.

[0308] P6: Forming a cathode 17.

[0309] P7: Treating the light-emitting device 100 by hydrogen plasma treatment to increase the content of hydrogen elements in the first functional layer 14X.

[0310] Exemplarily, the time of hydrogen plasma treatment can be 1 min to 5 min, for example, 1 min, 2 min, 3 min, 4 min or 5 min, etc.

[0311] P8: Forming a first initial auxiliary functional layer.

[0312] P9: Using a photolithography process to pattern the first initial auxiliary functional layer to form a plurality of first auxiliary functional layers 161 and vias 1611, expose part of the cathode 15, and form a hollow structure.

[0313] P10: Forming an auxiliary cathode 17; depositing the material of the auxiliary cathode 17 on the first auxiliary functional layer 161, and the material of the auxiliary cathode 17 fills the plurality of vias 1611.

[0314] Exemplarily, the thickness of the auxiliary cathode 17 can be 10 nm to 100 nm, for example, 10 nm, 20 nm, 40 nm, 60 nm, 70 nm, 90 nm or 100 nm, etc.

[0315] Here, for the understanding of P1 forming the anode 11, P2 forming the hole injection layer 121, P3 forming the hole transport layer 122, P4 forming the light-emitting layer 13, P5 forming the first functional layer 14X, P6 forming the cathode 15 and P8 forming the first initial auxiliary functional layer, please refer to the description of R1 forming the anode 11, R2 forming the hole injection layer 121, R3 forming the hole transport layer 122, R4 forming the light-emitting layer 13, R5 forming the first functional layer 14X, R6 forming the cathode 15 and R7 forming the first auxiliary functional layer 161 in the foregoing part, which will not be repeated here.

[0316]

Embodiment 5

[0317] The following embodiment prepares a light-emitting substrate 200, which includes a light-emitting device 100, and the structure of the light-emitting device 100 is shown in FIG. 14. The preparation method includes Q1-Q7.

[0318] Q1: Forming an anode 11.

[0319] Q2: Forming the hole injection layer 121.

[0320] Q3: Forming the hole transport layer 122.

[0321] Q4: Forming the light emitting layer 13.

[0322] Q5: Forming the first functional layer 14X.

[0323] Q6: Forming the cathode 15.

[0324] Q7: Depositing the material of the first auxiliary functional layer 161 on the side of the cathode 15 away from the first functional layer 14X to form the first auxiliary functional layer 161. The material of the first auxiliary functional layer 161 includes a high molecular material and a protonic acid. The high molecular material is, for example, polymethyl methacrylate or polytetrafluoroethylene, and the protonic acid is, for example, acrylic acid.

[0325] Here, regarding the understanding of Q1 forming the anode 11, Q2 forming the hole injection layer 121, Q3 forming the hole transport layer 122, Q4 forming the light emitting layer 13, Q5 forming the first functional layer 14X, and Q6 forming the cathode, reference can be made to the foregoing description of R1 forming the anode 11, R2 forming the hole injection layer 121, R3 forming the hole transport layer 122, R4 forming the light emitting layer 13, R5 forming the first functional layer 14X, and R6 forming the cathode, which will not be repeated here.

[0326]

Example 6

[0327] The following example prepares a light emitting substrate 200 including a light emitting device 100, the structure of which is shown in FIG. 14. The preparation method includes F1-F7.

[0328] F1: Forming the anode 11.

[0329] F2: Forming the hole injection layer 121.

[0330] F3: Forming the hole transport layer 122.

[0331] F4: Forming the light emitting layer 13.

[0332] F5: Forming the first functional layer 14X.

[0333] F6: Forming the cathode 15.

[0334] F7: Depositing the material of the first auxiliary functional layer 161 on the side of the cathode 15 away from the first functional layer 14X to form the first auxiliary functional layer 161. The material of the first auxiliary functional layer 161 includes a protonated organic molecular cage.

[0335] Here, regarding the understanding of forming anode 11 at F1, forming hole injection layer 121 at F2, forming hole transport layer 122 at F3, forming light emitting layer 13 at F4, forming first functional layer 14X at F5, and forming cathode at F6, reference can be made to the foregoing description regarding forming anode 11 at R1, forming hole injection layer 121 at R2, forming hole transport layer 122 at R3, forming light emitting layer 13 at R4, forming first functional layer 14X at R5, and forming cathode at R6, which will not be repeated here.

[0336] Example 7

[0337] The following example prepares a light emitting substrate 200, which includes inverted light emitting device 100, the structure of light emitting device 100 is shown in FIG. 14. The preparation method includes T1-T8.

[0338] T1: Depositing a material of first auxiliary functional layer 161 on substrate 210 to form first auxiliary functional layer 161. Here, first auxiliary functional layer 161 can be a common functional layer of multiple light emitting devices 100, forming a structure of integral layer communication.

[0339] T2: Forming multiple spaced-apart cathodes 15 on the side of first auxiliary functional layer 161 away from substrate 210.

[0340] T3: Forming a patterned pixel defining layer on first auxiliary functional layer 161, the pixel defining layer including multiple pixel openings.

[0341] T4: Depositing zinc oxide or magnesium zinc oxide on the side of cathode 15 away from first auxiliary functional layer 161 to form first functional layer 14X.

[0342] T5: Depositing a material of quantum dot light emitting layer 13 on the side of first functional layer 14X away from cathode 15, and patterning the deposited material of quantum dot light emitting layer 13 using photolithography process to form light emitting layer 13.

[0343] T6: Depositing a material of hole transport layer 122 on the side of light emitting layer 13 away from first functional layer 14X to form hole transport layer 122.

[0344] T7: Depositing a material of hole injection layer 121 on the side of hole transport layer 122 away from light emitting layer 13 to form hole injection layer 121.

[0345] T8: Depositing a material of anode 11 on the side of hole injection layer 121 away from hole transport layer 122 to form anode 11.

[0346] Here, for the understanding of the film layer materials and thicknesses used in T1-T8, reference can be made to the exemplary descriptions of the materials and thicknesses used in the corresponding film layers of R1-R8 in the foregoing section, which will not be repeated here.

[0347] [Example 8]

[0348] The following example prepared a light-emitting substrate 200 including a light-emitting device 100, the structure of which is shown in FIG. 16. The preparation method includes A1-A8.

[0349] A1: Prepare a substrate including a substrate 210 and a patterned anode 11 disposed on the substrate 210; sequentially clean the substrate using deionized water, isopropyl alcohol, and acetone for 15 minutes each using ultrasonic cleaning. After blowing dry with nitrogen, bake for 10 minutes, and then treat with ultraviolet ozone for 10 minutes.

[0350] A2: In an air atmosphere, spin-coat a PEDOT:PSS solution on the substrate at a spin-coating speed of 3000 r / min to form a hole injection layer 121; then anneal at 120°C for 20 minutes, and after the annealing is completed and the substrate is cooled, transfer the substrate with the hole injection layer 121 formed thereon to a nitrogen-filled glove box.

[0351] A3: In the nitrogen-filled glove box, spin-coat a TFB solution (concentration of 8 mg / mL) on the side of the hole injection layer 121 away from the anode 11 at a spin-coating speed of 3000 r / min to form a hole transport layer 122; then anneal at 120°C for 20 minutes.

[0352] A4: In the nitrogen-filled glove box, spin-coat a red quantum dot solution (quantum dots are CdSe / CdS, concentration of 20 mg / mL) on the side of the hole transport layer 122 away from the hole injection layer 121 at a spin-coating speed of 3000 r / min to form an initial light-emitting layer, and then anneal at 100°C for 5 minutes; after the annealing is completed and the substrate is cooled, pattern the initial light-emitting layer to form a light-emitting layer 13.

[0353] A5: In the nitrogen-filled glove box, spin-coat a ZnO solution on the side of the light-emitting layer 13 away from the hole transport layer 122 at a spin-coating speed of 2000 r / min to form a first functional layer 14X, and then anneal at 80°C for 10 minutes.

[0354] A6: In the nitrogen-filled glove box, spin-coat a platinum film on the side of the first functional layer 14X away from the light-emitting layer 13 at a spin-coating speed of 3000 r / min to form a second auxiliary functional layer 162, and then anneal at 80°C for 5 minutes, and then treat in a hydrogen atmosphere.

[0355] A7: The substrate with the second auxiliary functional layer 162 formed thereon is transferred to a vacuum chamber with a pressure lower than 4x10 -4 An aluminum electrode with a thickness of 100 nm is evaporated in the vacuum evaporation chamber Pa at a rate of 0.3 nm / s.

[0356] A8: After the light emitting device 100 is prepared, the plurality of light emitting devices 100 are encapsulated with an epoxy encapsulation glue in a nitrogen environment, and a drying sheet is used for encapsulation testing.

[0357]

Example 9

[0358] The following example prepares a light emitting substrate 200 including the light emitting device 100, which has a structure as shown in FIG. 16. The preparation method includes B1-B8.

[0359] B1: An anode 11 is prepared.

[0360] B2: A hole injection layer 121 is formed.

[0361] B3: A hole transport layer 122 is formed.

[0362] B4: In a glove box filled with nitrogen, a green quantum dot solution (quantum dots are CdSe / ZnS, concentration is 20 mg / mL) is spin-coated on a side of the hole transport layer 122 away from the hole injection layer 121 at a spin-coating speed of 3000 r / min to form an initial light emitting layer 13; then the initial light emitting layer is patterned to form the light emitting layer 13 after annealing at 100°C for 5 minutes and cooling the substrate.

[0363] B5: A first functional layer 14X is formed.

[0364] B6: A second auxiliary functional layer 162 is formed.

[0365] B7: A cathode 15 is formed.

[0366] B8: Encapsulation.

[0367] Here, the understanding of B1 preparing the anode 11, B2 forming the hole injection layer 121, B3 forming the hole transport layer 122, B5 forming the first functional layer 14X, B6 forming the second auxiliary functional layer 162, B7 forming the cathode 15, and B8 encapsulation can correspond to the description of A1 preparing the anode 11, A2 forming the hole injection layer 121, A3 forming the hole transport layer 122, A5 forming the first functional layer 14X, A6 forming the second auxiliary functional layer 162, A7 forming the cathode 15, and A8 encapsulation in the foregoing part, which will not be repeated here.

[0368]

Example 10

[0369] The following embodiment prepares a light-emitting substrate 200, which includes a light-emitting device 100, the structure of which is shown in FIG. 16. The preparation method includes C1-C8.

[0370] C1: Prepare the anode 11.

[0371] C2: Form the hole injection layer 121.

[0372] C3: Form the hole transport layer 122.

[0373] C4: Form the light-emitting layer 13.

[0374] C5: In a glove box filled with nitrogen, spin-coat a ZnMgO solution on the side of the light-emitting layer 13 away from the hole transport layer 122 at a spin-coating speed of 2000 r / min to form a first functional layer 14X, and then anneal at 80°C for 10 minutes.

[0375] C6: Form the second auxiliary functional layer 162.

[0376] C7: Form the cathode 15.

[0377] C8: Package.

[0378] Here, the understanding of C1 preparing the anode 11, C2 forming the hole injection layer 121, C3 forming the hole transport layer 122, C4 forming the light-emitting layer 13, C6 forming the second auxiliary functional layer 162, C7 forming the cathode 15, and C8 packaging can correspond to the description of A1 preparing the anode 11, A2 forming the hole injection layer 121, A3 forming the hole transport layer 122, A4 forming the light-emitting layer 13, A6 forming the second auxiliary functional layer 162, A7 forming the cathode 15, and A8 packaging in the foregoing section, which will not be repeated here.

[0379]

Embodiment 11

[0380] The following embodiment prepares a light-emitting substrate 200, which includes an inverted light-emitting device 100 that emits red light, the structure of which is shown in FIG. 17. The preparation method includes D1-D9.

[0381] D1: Prepare a substrate, which includes a substrate 210, and sequentially ultrasonically clean the substrate 210 with deionized water, isopropyl alcohol, and acetone for 15 minutes each. After blowing dry with nitrogen, bake for 10 minutes, and then perform ultraviolet ozone treatment for 10 minutes.

[0382] D2: Transfer the substrate to a vacuum evaporation chamber with a pressure lower than 4x10 -4 Pa, and evaporate silver material on the substrate 210 to form the cathode 15.

[0383] D3: Transfer the substrate with cathode 15 to a glove box filled with nitrogen. Spin-coat a ZnMgO solution (concentration of 25 mg / mL) on the side of cathode 15 away from substrate 210 at a spin speed of 2000 r / min to form the first functional layer 14X. Then anneal at 80°C for 10 minutes. After annealing, wait for the substrate to cool.

[0384] D4: In a nitrogen-filled glove box, a platinum film is spin-coated on the side of the first functional layer 14X away from the cathode 15 at a spin speed of 3000 r / min to form the second auxiliary functional layer 162; then annealed at 80°C for 5 minutes, and then processed in a hydrogen atmosphere.

[0385] D5: In a nitrogen-filled glove box, spin-coat a quantum dot solution (quantum dots are CdSe / CdS, concentration 20mg / mL) on the side of the second auxiliary functional layer 162 away from the first functional layer 14X at a spin-coating speed of 3000r / min, and then anneal at 100℃ for 5 minutes to form the luminescent layer 13.

[0386] D6: Transfer the substrate with the light-emitting layer 13 to a pressure below 4×10 -4 In a vacuum evaporation chamber, TAPC material for hole transport layer 122 is deposited on the side of the light-emitting layer 13 away from the second auxiliary functional layer 162 to form hole transport layer 122.

[0387] D7: MoO3 material for hole injection layer 121 is vapor-deposited on the side of hole transport layer 122 away from light-emitting layer 13 to form hole injection layer 121.

[0388] D8: Anode 11 material Mg / Ag is vapor-deposited on the side of hole injection layer 121 away from hole transport layer 122 to form anode 11.

[0389] D9: After the light-emitting device 100 is prepared, multiple light-emitting devices 100 are encapsulated with epoxy encapsulant in a nitrogen environment, and encapsulation tests are performed using a dry sheet.

[0390]

Example 12

[0391] The following embodiments demonstrate the fabrication of a light-emitting substrate 200, which includes an inverted light-emitting device 100 that emits green light. The structure of the inverted light-emitting device 100 is shown in Figure 17. The fabrication method includes steps E1 to E9.

[0392] E1: Prepare the substrate.

[0393] E2: Forms cathode 15.

[0394] E3: In a glove box filled with nitrogen, spin-coat a ZnO solution (concentration 20 mg / mL) on the side of the cathode 15 away from the substrate 210 at a spin-coating speed of 2000 r / min to form a first functional layer 14X; then anneal at 80°C for 10 minutes.

[0395] E4: Form a second auxiliary functional layer 162.

[0396] E5: In a glove box filled with nitrogen, spin-coat a quantum dot solution (quantum dots are CdSe / ZnS, concentration 20 mg / mL) on the side of the second auxiliary functional layer 162 away from the first functional layer 14X at a spin-coating speed of 3000 r / min, then anneal at 100°C for 5 minutes to form a light-emitting layer 13.

[0397] E6: Form a hole transport layer 122.

[0398] E7: Form a hole injection layer 121.

[0399] E8: Form an anode 11.

[0400] E9: Package and test.

[0401] Here, the understanding of the preparation of the substrate in E1, the formation of the cathode 15 in E2, the formation of the hole transport layer 122 in E6, the formation of the hole injection layer 121 in E7, the formation of the anode 11 in E8, and the packaging and testing in E9 can be referred to the descriptions of the preparation of the substrate in D1, the formation of the cathode 15 in D2, the formation of the hole transport layer 122 in D6, the formation of the hole injection layer 121 in D7, the formation of the anode 11 in D8, and the packaging and testing in D9 in the foregoing sections, which will not be repeated here.

[0402] The above merely provides a specific implementation of the present disclosure, but the protection scope of the present disclosure is not limited thereto, any person skilled in the art can think of changes or replacements within the technical scope disclosed by the present disclosure, which shall be covered within the protection scope of the present disclosure. Therefore, the protection scope of the present disclosure shall be subject to the protection scope of the claims.

Claims

1. A light-emitting substrate, comprising: Substrate; Multiple light-emitting devices are disposed on the substrate; the light-emitting devices include: The cathode and anode are positioned opposite each other; A light-emitting layer is located between the cathode and the anode; The first functional layer is located between the light-emitting layer and the cathode; An auxiliary functional layer is located on the side of the light-emitting layer away from the anode; An encapsulation layer is disposed on the side of the plurality of light-emitting devices away from the substrate.

2. The light-emitting substrate according to claim 1, wherein, The auxiliary function layer includes: The first auxiliary functional layer is made of an insulating material containing hydrogen.

3. The light-emitting substrate according to claim 2, wherein, The first auxiliary functional layer is located on the side of the cathode away from the first functional layer.

4. The light-emitting substrate according to claim 3, wherein, The light-emitting device further includes: An auxiliary cathode is located on the side of the first auxiliary functional layer away from the cathode and is electrically connected to the cathode.

5. The light-emitting substrate according to claim 4, wherein, The first auxiliary functional layer includes a plurality of spaced-apart vias; the auxiliary cathode is electrically connected to the cathode through the plurality of vias.

6. The light-emitting substrate according to claim 4 or 5, wherein, The dimension of the auxiliary cathode along the first direction is greater than or equal to the dimension of the cathode along the first direction; the first direction is the thickness direction of the substrate.

7. The light-emitting substrate according to any one of claims 4 to 6, wherein, The cathode has a size range of 10 nm to 50 nm along the first direction; the auxiliary cathode has a size range of 10 nm to 100 nm along the first direction; the first direction is the thickness direction of the substrate.

8. The light-emitting substrate according to any one of claims 2 to 7, wherein, Also includes: A pixel defining layer is disposed on the substrate and includes a plurality of pixel openings; the plurality of light-emitting devices are correspondingly disposed within the plurality of pixel openings; The cathode is closer to the substrate than the anode; The first auxiliary functional layers of the plurality of light-emitting devices are connected to form a common functional layer, which is located between the pixel defining layer and the substrate.

9. The light-emitting substrate according to any one of claims 2 to 8, wherein, The material of the first auxiliary functional layer includes one or any combination of silicon nitride, silicon oxynitride, and silicon oxide; or, The material of the first auxiliary functional layer includes an insulating polymer material and a protic acid; or, The material of the first auxiliary functional layer includes protonated organic molecular cages.

10. The light-emitting substrate according to claim 9, wherein, When the material of the first auxiliary functional layer includes one or any combination of silicon nitride, silicon oxynitride, and silicon oxide, the atomic percentage of hydrogen in the first auxiliary functional layer is greater than 0 and less than or equal to 30%. When the material of the first auxiliary functional layer includes an insulating polymer material and a protic acid, the molar ratio of the protic acid to the insulating polymer material ranges from 2.5:10 to 3.5:

10.

11. The light-emitting substrate according to any one of claims 2 to 10, wherein, The atomic percentage of hydrogen in the first functional layer ranges from 1% to 30%.

12. The light-emitting substrate according to any one of claims 2 to 11, wherein, The size range of the first auxiliary functional layer along the first direction is 550nm to 1100nm; the first direction is the thickness direction of the substrate.

13. The light-emitting substrate according to any one of claims 2 to 12, wherein, The ratio of the dimension of the first auxiliary functional layer along the first direction to the dimension of the cathode along the first direction is in the range of 5 to 110; the first direction is the thickness direction of the substrate.

14. The light-emitting substrate according to any one of claims 2 to 13, wherein, The light transmittance of the first auxiliary functional layer is greater than or equal to 80%.

15. The light-emitting substrate according to any one of claims 1 to 14, wherein, The auxiliary function layer includes: A second auxiliary functional layer is disposed between the cathode and the light-emitting layer; the material of the second auxiliary functional layer includes a nanocatalyst material, which is configured to dissociate hydrogen in a hydrogen atmosphere under preset conditions.

16. The light-emitting substrate according to claim 15, wherein, The nanocatalyst material includes one or any combination of metals, metal oxides and metal complexes.

17. The light-emitting substrate according to claim 15 or 16, wherein, The second auxiliary functional layer has a size range of 30nm to 80nm along the first direction; the first direction is the thickness direction of the substrate.

18. The light-emitting substrate according to any one of claims 1 to 17, wherein, The encapsulation layer is made of neutral organic materials and / or alkaline organic materials.

19. The light-emitting substrate according to any one of claims 1 to 18, wherein, The auxiliary function layer includes: A first auxiliary functional layer is disposed on the side of the cathode away from the first functional layer; the material of the first auxiliary functional layer includes an insulating material, the insulating material containing hydrogen; and / or, A second auxiliary functional layer is disposed between the cathode and the light-emitting layer; the material of the second auxiliary functional layer includes a nanocatalyst material, which is configured to dissociate hydrogen in a hydrogen atmosphere under preset conditions.

20. A method for preparing a light-emitting substrate, comprising: Forming a substrate; Multiple light-emitting devices are formed on one side of the substrate; each light-emitting device includes a cathode, an anode, a light-emitting layer, a first functional layer, and an auxiliary functional layer. The cathode and the anode are disposed opposite to each other; the light-emitting layer is located between the cathode and the anode; the first functional layer is located between the light-emitting layer and the cathode; the auxiliary functional layer is located on the side of the light-emitting layer away from the anode. An encapsulation layer is formed on the side of the plurality of light-emitting devices away from the substrate.

21. The method for preparing a light-emitting substrate according to claim 20, wherein, The auxiliary functional layer includes a first auxiliary functional layer disposed on the side of the cathode away from the first functional layer, and the material of the first auxiliary functional layer includes an insulating material containing hydrogen. The preparation method further includes: After the formation of multiple light-emitting devices, the multiple light-emitting devices are subjected to heat treatment.

22. The method for preparing a light-emitting substrate according to claim 21, wherein, The heating treatment temperature range is 80℃~120℃; and / or, the heating treatment time range is 10min~120min.

23. The method for preparing a light-emitting substrate according to claim 21 or 22, wherein, The preparation method further includes: hydrogen ion implantation into the first auxiliary functional layer, and / or, the first functional layer.

24. The method for preparing a light-emitting substrate according to any one of claims 20 to 23, wherein, The auxiliary functional layer includes a second auxiliary functional layer disposed between the cathode and the light-emitting layer; the material of the second auxiliary functional layer includes a nano-catalyst material; The nanocatalyst material is configured to dissociate hydrogen in a hydrogen atmosphere under preset conditions; The preparation method further includes: This forms the first functional layer and the second auxiliary functional layer. The first functional layer and the second auxiliary functional layer are processed in a hydrogen atmosphere.

25. A light-emitting device, comprising a driver chip and a light-emitting substrate as described in any one of claims 1 to 19, wherein the driver chip is used to drive the light-emitting substrate to emit light.

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