Perovskite assembly and manufacturing method therefor

Abstract

The present invention primarily relates to the technical field of solar cells, and provides a perovskite assembly and a manufacturing method therefor. The perovskite assembly comprises a scribed region and a compensation region, each of the compensation region and the scribed region comprising a substrate layer, a bottom electrode layer, an electron transport layer, a perovskite layer, a hole transport layer, and a top metal electrode layer. The scribed region comprises a first etched groove, a second etched groove, and a third etched groove, the first etched groove penetrating the bottom electrode layer, and the third etched groove penetrating the top metal electrode layer. The compensation region comprises only a fourth etched groove, the fourth etched groove penetrating the bottom electrode layer, electron transport layer, perovskite layer, hole transport layer and top metal electrode layer of the compensation region, the fourth etched groove being electrically connected to the first etched groove or the third etched groove of the scribed region. The present invention performs area compensation for perovskite sub-cells having different current densities by means of sub-compensation regions, which can reduce series current loss caused by non-uniformity of perovskite sub-cells.

Description

Perovskite assembly and manufacturing method thereof TECHNICAL FIELD

[0001] The present application mainly relates to the technical field of solar cells, in particular to a perovskite assembly and a manufacturing method thereof. BACKGROUND

[0002] In the production process of perovskite batteries, at least three laser slotting processes are required. The whole battery plate is divided into several rectangular intervals through P1 / P2 / P3 laser cutting processes, and then the several rectangular intervals are connected in series to obtain a perovskite assembly. Due to the use of a series connection method, the voltage of the assembly after series connection is accumulated and superimposed, and the current size is the minimum single battery current. Ideally, the open voltage and current density of each sub-battery are basically consistent. However, in actual production, the evaporation or coating process cannot guarantee that the effect of each region of the assembly is consistent, further causing slight differences in current between sub-batteries. At this time, if a certain battery unit has a process problem leading to a small current, the overall power of the assembly will be greatly reduced, affecting the power generation efficiency of the battery pack. SUMMARY

[0003] The technical problem to be solved by the present application is to provide a perovskite assembly and a manufacturing method thereof, which solves the problem of reduced power generation efficiency of the assembly caused by unevenness of each sub-battery.

[0004] To solve the above technical problems, the present application provides a perovskite assembly, which comprises a scribe line region and a compensation region. The compensation region and the scribe line region both comprise a substrate layer, a bottom electrode layer, an electron transport layer, a perovskite layer, a hole transport layer and a top metal electrode layer. The scribe line region comprises a first etching groove, a second etching groove and a third etching groove. The first etching groove penetrates the bottom electrode layer, and the third etching groove penetrates the top metal electrode layer. The compensation region only comprises a fourth etching groove, which penetrates the bottom electrode layer, the electron transport layer, the perovskite layer, the hole transport layer and the top metal electrode layer of the compensation region. The first etching groove, the second etching groove and the third etching groove divide the scribe line region into a plurality of perovskite sub-batteries. The compensation region comprises a plurality of fourth etching grooves, which divide the compensation region into a plurality of sub-compensation regions. Each perovskite sub-battery is electrically connected to at least one sub-compensation region.

[0005] Optionally, the area of the sub-compensation region to which the perovskite sub-battery is connected is inversely proportional to the current density of the perovskite sub-battery.

[0006] Optionally, the compensation region is located in the vertical direction of the first etching groove, the second etching groove and the third etching groove.

[0007] Optionally, the size of the perovskite assembly is 5*5cm-100*200cm.

[0008] Optionally, the area of the compensation region is 5%-15% of the area of the perovskite assembly.

[0009] Optionally, the thickness of the bottom electrode layer is 300-600nm, the thickness of the electron transport layer is 20-50nm, the thickness of the perovskite layer is 300-700nm, the thickness of the hole transport layer is 10-30nm, and the thickness of the top metal electrode layer is 70-200nm.

[0010] Optionally, the slot width of the fourth etching groove is 100-300μm.

[0011] To solve the above technical problems, the application provides a manufacturing method of a perovskite assembly, which comprises the following steps: dividing a substrate layer into a scribe line region and a compensation region; depositing a bottom electrode layer, an electron transport layer, a perovskite layer, a hole transport layer and a top metal electrode layer on the substrate layer, and in the deposition process, etching a first etching groove, a second etching groove and a third etching groove in the scribe line region, the first etching groove penetrating through the bottom electrode layer, the third etching groove penetrating through the top metal electrode layer, and the first etching groove, the second etching groove and the third etching groove dividing the scribe line region into a plurality of perovskite sub-cells; arranging a plurality of fourth etching grooves in the compensation region, the plurality of fourth etching grooves dividing the compensation region into a plurality of sub-compensation regions, each perovskite sub-cell being electrically connected to at least one sub-compensation region, and the fourth etching groove penetrating through the bottom electrode layer, the electron transport layer, the perovskite layer, the hole transport layer and the top metal electrode layer of the compensation region; and connecting the perovskite sub-cells in series to obtain a perovskite assembly.

[0012] Optionally, the method further comprises, after the third etching groove is completed, performing a photoluminescence test on the scribe line region to obtain the current density of each perovskite sub-cell; and setting the position of the fourth etching groove according to the current density of each perovskite sub-cell.

[0013] Optionally, setting the position of the fourth etching groove according to the current density of each perovskite sub-cell comprises: setting the position of the fourth etching groove to be inversely proportional to the area of the sub-compensation region connected to the perovskite sub-cell and the current density of the perovskite sub-cell.

[0014] Compared with the prior art, the application has the following advantages:

[0015] The perovskite assembly and the manufacturing method thereof, the scribe line area includes a first etching groove, a second etching groove and a third etching groove, the first etching groove penetrates the bottom electrode layer, the third etching groove penetrates the top metal electrode layer, the compensation area only includes a fourth etching groove, the fourth etching groove penetrates the bottom electrode layer, the electron transport layer, the perovskite layer, the hole transport layer and the top metal electrode layer of the compensation area, and the fourth etching groove is electrically connected with the first etching groove or the third etching groove of the scribe line area, the compensation area is divided into a plurality of sub-compensation areas by a plurality of fourth etching grooves, the area of the perovskite sub-cell with different current densities is compensated by the sub-compensation area, the series current loss caused by the non-uniformity of the perovskite sub-cell can be reduced, and the power generation efficiency of the assembly can be effectively improved.

[0016] SUMMARY

[0017] The accompanying drawings are included to provide a further understanding of the present application, and are incorporated in and constitute apart of this application, illustrate embodiments of the present application, and together with the description serve to explain the principles of the present application.

[0018] Fig. 1 is a top view of a perovskite assembly according to an embodiment of the present application.

[0019] Fig. 2 is a cross-sectional view of a scribe line area of the perovskite assembly of the present application.

[0020] Fig. 3 is a cross-sectional view of a compensation area of the perovskite assembly of the present application.

[0021] Fig. 4 is a top view of a conventional perovskite assembly.

[0022] Fig. 5 is a cross-sectional view of the perovskite assembly of Fig. 4.

[0023] Fig. 6 is a flowchart of a manufacturing method of a perovskite assembly according to an embodiment of the present application.

[0024] Preferred embodiments of the present application

[0025] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings needed in the embodiment description will be briefly introduced as follows. Obviously, the drawings in the following description are only some examples or embodiments of the present application, and for those skilled in the art, the present application can also be applied to other similar scenarios without creative labor. Unless it is obvious from the language environment or otherwise stated, the same reference numerals in the drawings represent the same structure or operation.

[0026] Fig. 1 is a top view of a perovskite assembly according to an embodiment of the present application. As shown in Fig. 1, the perovskite assembly 100 includes a scribe line area and a compensation area. The scribe line area includes an etching groove P1, an etching groove P2 and an etching groove P3, and the compensation area only includes an etching groove P3.5.

[0027] FIG. 2 is a sectional view of a scribing region of the perovskite assembly of the present application. FIG. 3 is a sectional view of a compensation region of the perovskite assembly of the present application. As shown in FIGS. 2-3, both the compensation region and the scribing region include a substrate layer (not shown), a bottom electrode layer 1, an electron transport layer 2, a perovskite layer 3, a hole transport layer 4, and a top metal electrode layer 5. Etching groove P1 penetrates the bottom electrode layer 1. Etching groove P2 penetrates the electron transport layer 2, the perovskite layer 3, and the hole transport layer 4, and the top metal electrode layer 5 is electrically connected to the bottom electrode layer 1 through the etching groove P2. Etching groove P3 penetrates the top metal electrode layer 5. Among them, the etching groove P1 is used to divide the bottom electrode layer 1 into strip-shaped conductive electrodes independent of each other, and also serves as a positioning point for the subsequent etching groove P2 and etching groove P3. The etching groove P2 is used to electrically connect the top metal electrode layer 5 to the bottom electrode layer 1, that is, to connect the positive and negative electrodes between the sub-cells; the etching groove P3 is used to separate the sub-cells. As shown in FIG. 3, the etching groove P3.5 penetrates the bottom electrode layer 1, the electron transport layer 2, the perovskite layer 3, the hole transport layer 4, and the top metal electrode layer 5 of the compensation region.

[0028] As shown in FIG. 1, the etching groove P1, the etching groove P2, and the etching groove P3 divide the scribing region into a plurality of perovskite sub-cells A, and the compensation region is located in the vertical direction of the etching groove P1, the etching groove P2, and the etching groove P3. The compensation region includes a plurality of etching grooves P3.5, which divide the compensation region into a plurality of sub-compensation regions B. In this embodiment, there are two compensation regions, one above and one below, and each perovskite sub-cell A is electrically connected to two sub-compensation regions B. In some embodiments, only the upper compensation region or the lower compensation region can be included, and each perovskite sub-cell A is electrically connected to one sub-compensation region. In other words, each perovskite sub-cell is electrically connected to at least one sub-compensation region.

[0029] Optionally, the area of the sub-compensation region connected to the perovskite sub-cell is inversely proportional to the current density of the perovskite sub-cell. In other words, the smaller the current density of the perovskite sub-cell, the larger the area of the sub-compensation region; the larger the current density of the perovskite sub-cell, the smaller the area of the sub-compensation region. By providing sub-compensation regions of different areas for perovskite sub-cells of different current densities, the present application can reduce the series current loss caused by the non-uniformity of the perovskite sub-cells, and effectively improve the power generation efficiency of the assembly.

[0030] Optionally, the size of the perovskite assembly is 5*5 cm to 100*200 cm.

[0031] Optionally, the area of the compensation region is 5-15% of the area of the perovskite component. The area of the compensation region can be determined according to the difference between the sub-cells of the component. For example, a perovskite cell has a current density of 22 mA / cm2 at a small area, and a conventional large-area component has a current density of 21 mA / cm2. The difference is (22-21) / 21≈4.5%, and a 5% redundancy is reserved, so 5-10% of the total area of the perovskite component can be reserved as the compensation region. 2 For another example, a perovskite cell has a current density of 23 mA / cm2 at a small area, and a conventional large-area component has a current density of 21 mA / cm2. The difference is (23-21) / 21≈9.5%, and a 5% redundancy is reserved, so 10-15% of the total area of the perovskite component can be reserved as the compensation region. 2

[0032] Optionally, the width of the etching groove P3.5 is 100-300 μm.

[0033] Optionally, the laser for etching the etching groove P3.5 includes one or more of nanosecond, picosecond or femtosecond lasers.

[0034] Optionally, the thickness of the bottom electrode layer 1 is 300-600 nm, the thickness of the electron transport layer 2 is 20-50 nm, the thickness of the perovskite layer 3 is 300-700 nm, the thickness of the hole transport layer 4 is 10-30 nm, and the thickness of the top metal electrode layer 5 is 70-200 nm.

[0035] Figure 4 is a top view of a conventional perovskite component. Figure 5 is a sectional view of the perovskite component of Figure 4. As shown in Figures 4-5, the conventional perovskite component 400 only includes a scribed region, which includes the etching groove P1, the etching groove P2 and the etching groove P3. The scribed region includes a substrate layer (not shown), a bottom electrode layer 1, an electron transport layer 2, a perovskite layer 3, a hole transport layer 4 and a top metal electrode layer 5. The etching groove P1 penetrates the bottom electrode layer 1. The etching groove P2 penetrates the electron transport layer 2, the perovskite layer 3 and the hole transport layer 4. The etching groove P3 penetrates the top metal electrode layer 5, the hole transport layer 4, the perovskite layer 3 and the electron transport layer 2.

[0036] Table 1 is a comparison table of performance parameters of the conventional perovskite component and the perovskite component of the present application.

[0037] As shown in Table 1, the present application divides the compensation region into multiple sub-compensation regions by multiple etching grooves P3.5, and the different current density perovskite sub-cells are compensated by the sub-compensation regions, which can effectively improve the short-circuit current, current density and power conversion efficiency of the component.

[0038] ​FIG. 6 is a flow chart of a method for manufacturing a perovskite assembly according to an embodiment of the present application. As shown in FIG. 6, the method 600 for manufacturing a perovskite assembly includes the following steps:

[0039] Step S61: dividing the substrate layer into a scribe region and a compensation region;

[0040] Step S62: depositing a bottom electrode layer, an electron transport layer, a perovskite layer, a hole transport layer, and a top metal electrode layer on the substrate layer, and in the process of deposition, etching a first etching groove, a second etching groove, and a third etching groove in the scribe region, the first etching groove penetrating through the bottom electrode layer, the second etching groove penetrating through the electron transport layer, the perovskite layer, and the hole transport layer, and the third etching groove penetrating through the top metal electrode layer, the first etching groove, the second etching groove, and the third etching groove dividing the scribe region into a plurality of perovskite sub-cells;

[0041] Specifically, first, depositing the bottom electrode layer on the substrate layer, etching the first etching groove on the bottom electrode layer; then, depositing the electron transport layer, coating the perovskite layer, depositing the hole transport layer after annealing, etching the second etching groove on the hole transport layer, the perovskite layer, and the electron transport layer, and finally, depositing the top metal electrode layer, etching the third etching groove on the top metal electrode layer.

[0042] Step S63: setting a plurality of fourth etching grooves in the compensation region, the plurality of fourth etching grooves dividing the compensation region into a plurality of sub-compensation regions, each perovskite sub-cell being electrically connected to at least one sub-compensation region, and the fourth etching groove penetrating through the bottom electrode layer, the electron transport layer, the perovskite layer, the hole transport layer, and the top metal electrode layer of the compensation region;

[0043] Step S64: connecting the perovskite sub-cells in series to obtain the perovskite assembly.

[0044] Optionally, before step S63, the method further includes:

[0045] Performing photoluminescence test on the scribe region to obtain the current density of each perovskite sub-cell, and setting the position of the fourth etching groove according to the current density of each perovskite sub-cell.

[0046] The photoluminescence test is a non-destructive test method, which can quickly and conveniently characterize the defects, impurities, and luminescence performance of the semiconductor material. In principle, when light is irradiated onto the sample, it is absorbed by the sample to produce a photoexcitation process. The stronger the luminescence intensity, the greater the current density. The weaker the luminescence intensity, the smaller the current density.

[0047] Optionally, the position of the fourth etching groove is set according to the current density of each perovskite sub-cell, and the area of the sub-compensation region connected to the perovskite sub-cell is inversely proportional to the current density of the perovskite sub-cell. In other words, the smaller the current density of the perovskite sub-cell, the larger the area of the sub-compensation region; the larger the current density of the perovskite sub-cell, the smaller the area of the sub-compensation region. The position of the fourth etching groove is set according to the required area of the sub-compensation region, that is, the compensation region is divided into the required area of the sub-compensation region through the fourth etching groove.

[0048] Optionally, in the compensation region, after depositing the bottom electrode layer, the electron transport layer, the perovskite layer, and the hole transport layer on the base layer, the scribe line region is subjected to photoluminescence testing to obtain the current density of each perovskite sub-cell, and then the top metal electrode layer of the compensation region is deposited to divide the compensation region through the fourth etching groove.

[0049] The above has described the basic concept, and it is obvious that the above-mentioned disclosure of the application is only an example and does not limit the application. Although it is not explicitly stated here, those skilled in the art can make various modifications, improvements and corrections to the application. Such modifications, improvements and corrections are suggested in the application, so such modifications, improvements and corrections still belong to the spirit and scope of the exemplary embodiments of the application.

[0050] As shown in the present application and claims, unless the context clearly indicates otherwise, the words "one", "an", "a", and / or "the" do not mean to specify a single number, but can also include a plurality. Generally, the terms "comprise" and "include" only indicate the inclusion of the steps and elements explicitly identified, and these steps and elements do not constitute an exclusive list, and the method or device can also include other steps or elements.

[0051] Unless otherwise specifically stated, the relative arrangement of parts and steps, numerical expressions, and numerical values set forth in these embodiments do not limit the scope of the application. At the same time, it should be understood that the sizes of the various parts shown in the drawings are not drawn in proportion to the actual proportions. Techniques, methods and devices known to those skilled in the relevant art can not be discussed in detail, but under appropriate circumstances, the techniques, methods and devices should be considered as part of the specification. In all examples shown and discussed here, any specific value should be interpreted as merely exemplary, and not as a limitation. Therefore, other examples of exemplary embodiments can have different values. It should be noted that similar reference numbers and letters represent similar items in the following drawings, so once an item is defined in one drawing, it does not need to be further discussed in subsequent drawings.

[0052] In the description of the application, it should be understood that the orientation words such as "front, back, up, down, left, right", "transverse, vertical, perpendicular, horizontal" and "top, bottom" and the like indicated orientation or position relationship are generally based on the orientation or position relationship shown in the drawings, and only for the convenience of describing the application and simplifying the description, without the opposite indication, these orientation words do not indicate and imply that the device or element referred to must have a particular orientation or be constructed and operated in a particular orientation, therefore it cannot be understood as a limitation on the scope of protection of the application; the orientation words "inner, outer" refer to the inner and outer of the contour of each component itself.

[0053] For the convenience of description, spatial relative terms such as "over", "above", "upper surface", "upper" and the like can be used herein to describe the spatial position relationship of one device or feature with other devices or features as shown in the drawings. It should be understood that the spatial relative terms are intended to include different orientations in use or operation in addition to the orientation of the device described in the drawings. For example, if the device in the drawing is inverted, the device described as "above" or "over" other devices or structures will be positioned "below" or "under" other devices or structures. Thus, the exemplary term "above" can include both "above" and "below" orientations. The device can also be positioned in other different ways (rotated 90 degrees or in other orientations), and the spatial relative descriptions used herein are interpreted accordingly.

[0054] In addition, it should be noted that the use of the words "first", "second" and the like to qualify elements is merely for the convenience of distinguishing the corresponding elements, and the above words have no special meaning unless otherwise stated, and therefore cannot be understood as a limitation on the scope of protection of the application. In addition, although the terms used in the present application are selected from commonly known and used terms, some terms mentioned in the specification of the present application can be selected by the applicant according to his or her judgment, and the detailed meanings thereof are described in the relevant part of the description. In addition, the present application is required to be understood not only by the actual terms used, but also by the meaning implied by each term.

[0055] Flowcharts are used in the present application to illustrate the operations performed by the system according to the embodiments of the present application. It should be understood that the preceding or following operations are not necessarily performed in sequence. On the contrary, various steps can be processed in reverse order or simultaneously. Meanwhile, or other operations are added to these processes, or one or more steps of operation are removed from these processes.

[0056] Also, the use of "a" or "an" to describe an element of the application is merely taken to mean "one or more" in some embodiments, unless otherwise indicated. The singular forms "a" or "an" are used herein to mean one or one or more than one, unless indicated otherwise. The term "another" is used herein to mean one or more than one, unless indicated otherwise. The term "additional" is used herein to mean one or more than one, unless indicated otherwise.

[0057] Similarly, it is to be noticed that the term "comprising", used in the description, is not used in the sense restricting itself to the features recited before the term, but is used in the sense allowing to include, in addition to the features recited before the term, other features, structures, features, characteristics and / or elements. It is also to be noted that the terms "comprising", "comprise" and "comprises", "including", "have" and "has", "with", "contain" and "contains" are to be construed in a non-exclusive sense as meaning that the described features, structures, features, characteristics and / or elements are included, but not that they are the only ones, unless otherwise noted.

[0058] Some embodiments use numerical ranges to describe quantities of components, attributes, etc. It should be understood that such numerical ranges described in the embodiments are, in some examples, modified by the word "about". Unless otherwise indicated, "about" indicates that a numerical value is not a precise value, but has a value allowing for a degree of variation, such as ±20% of the value. Accordingly, numerical parameters in the specification and claims are approximations, and unless otherwise indicated, are meant to encompass minor variations of the values set forth. In some embodiments, numerical parameters are approximations and are intended to encompass minor variations as long as the variations do not materially change the character of the described embodiments. In some embodiments, numerical parameters are approximations and are intended to encompass a range of values followed by the term "about". Unless otherwise indicated, the term "about" means that a numerical value is not a precise value, but has a value allowing for a degree of variation, such as ±20% of the value.

[0059] While the application has been described with reference to the currently preferred embodiments, those skilled in the art will recognize that changes can be made within the spirit of the application, and it is intended to include all such changes, variations, and modifications as fall within the scope of the appended claims.

Claims

1. A perovskite assembly, characterized in that, The scribe line area and the compensation area both include a substrate layer, a bottom electrode layer, an electron transport layer, a perovskite layer, a hole transport layer and a top metal electrode layer; The scribe line area includes a first etching groove, a second etching groove and a third etching groove, the first etching groove penetrates the bottom electrode layer, the second etching groove penetrates the electron transport layer, the perovskite layer and the hole transport layer, and the third etching groove penetrates the top metal electrode layer; the compensation area only includes a fourth etching groove, the fourth etching groove penetrates the bottom electrode layer, the electron transport layer, the perovskite layer, the hole transport layer and the top metal electrode layer of the compensation area; the first etching groove, the second etching groove and the third etching groove divide the scribe line area into a plurality of perovskite sub-cells; the compensation area includes a plurality of fourth etching grooves, the plurality of fourth etching grooves divide the compensation area into a plurality of sub-compensation areas, and each perovskite sub-cell is electrically connected to at least one sub-compensation area.

2. The perovskite assembly of claim 1, wherein, The area of the sub-compensation area connected to the perovskite sub-cell is inversely proportional to the current density of the perovskite sub-cell.

3. The perovskite assembly of claim 1, wherein, The compensation area is located in the vertical direction of the first etching groove, the second etching groove and the third etching groove.

4. The perovskite assembly of claim 1, wherein, The size of the perovskite assembly is 5*5cm-100*200cm.

5. The perovskite assembly of claim 4, wherein, The area of the compensation area is 5%-15% of the area of the perovskite assembly.

6. The perovskite assembly of claim 1, wherein, The thickness of the bottom electrode layer is 300-600nm, the thickness of the electron transport layer is 20-50nm, the thickness of the perovskite layer is 300-700nm, the thickness of the hole transport layer is 10-30nm, and the thickness of the top metal electrode layer is 70-200nm.

7. The perovskite assembly according to any one of claims 1 to 6, wherein The slot width of the fourth etching groove is 100-300μm.

8. A method of manufacturing a perovskite assembly, characterized by, It includes: Dividing the substrate layer into a scribe line area and a compensation area; Depositing a bottom electrode layer, an electron transport layer, a perovskite layer, a hole transport layer and a top metal electrode layer on the substrate layer; during the deposition process, a first etching groove, a second etching groove and a third etching groove are etched in the scribe line area, the first etching groove penetrates the bottom electrode layer, the second etching groove penetrates the electron transport layer, the perovskite layer and the hole transport layer, and the third etching groove penetrates the top metal electrode layer; the first etching groove, the second etching groove and the third etching groove divide the scribe line area into a plurality of perovskite sub-cells; A plurality of fourth etching grooves are arranged in the compensation area, the plurality of fourth etching grooves divide the compensation area into a plurality of sub-compensation areas, and each perovskite sub-cell is electrically connected to at least one sub-compensation area; the fourth etching groove penetrates the bottom electrode layer, the electron transport layer, the perovskite layer, the hole transport layer and the top metal electrode layer of the compensation area; The perovskite sub-cells are connected in series to obtain a perovskite assembly.

9. The method of manufacturing a perovskite assembly according to claim 8, wherein It also includes: After the third etching groove is completed, the scribe line area is subjected to photoluminescence testing to obtain the current density of each perovskite sub-cell; The position of the fourth etching groove is set according to the current density of each of the perovskite sub-cells.

10. The method of manufacturing a perovskite assembly according to claim 9, wherein The position of the fourth etching groove is set according to the current density of each of the perovskite sub-cells, including: The position of the fourth etching groove is set to be inversely proportional to the area of the sub-compensation region connected to the perovskite sub-cell and the current density of the perovskite sub-cell.

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