Metal oxide film layer and thin film transistor

Abstract

Provided is a metal oxide film layer, comprising: a first barrier layer; a potential well layer, which is located on a side of the first barrier layer; and a second barrier layer, which is located on the side of the potential well layer that is away from the first barrier layer, wherein the first barrier layer, the potential well layer and the second barrier layer are all made of metal oxides, and the conduction band energy level of the potential well layer is lower than the conduction band energy level of the first barrier layer and is lower than the conduction band energy level of the second barrier layer. The metal oxide film layer further comprises a functional layer, where the functional layer is located on the side of the potential well layer that is away from the first barrier layer, and the functional layer is made of an oxide of praseodymium or tantalum. Alternatively, the metal oxide film layer does not comprise a functional layer, and the potential well layer is made of praseodymium elements or tantalum elements.

Description

Metal oxide films and thin-film transistors Technical Field

[0001] This invention relates to display technology, and more particularly to a metal oxide film and a thin-film transistor. Background Technology

[0002] The mobility of traditional oxides is only 10 cm⁻¹ 2 Approximately / V·s. New high-mobility oxides, represented by those with high In and Sn content, have achieved mobility of 20–50 cm⁻¹. 2 Between / V·s. As the In and Sn content in the oxide increases, the negative bias temperature photo-stress (NBTIS) characteristics of the oxide will deteriorate significantly, leading to many display problems. Summary of the Invention

[0003] On one hand, this disclosure provides a metal oxide film layer, comprising: a first barrier layer; a potential well layer located on one side of the first barrier layer; a second barrier layer located on the side of the potential well layer away from the first barrier layer; and a functional layer located on the side of the potential well layer away from the first barrier layer, wherein the first barrier layer, the potential well layer, and the second barrier layer are all made of metal oxides, the conduction band energy level of the potential well layer is lower than the conduction band energy level of the first barrier layer and lower than the conduction band energy level of the second barrier layer, and the material of the functional layer is selected from praseodymium or tantalum oxide.

[0004] Optionally, the material of the first barrier layer and / or the second barrier layer is selected from Ga2O3 or Al2O3, and the material of the potential well layer is selected from In2O3 or SnO2.

[0005] Optionally, the functional layer is located on the side of the second barrier layer away from the potential well layer.

[0006] Optionally, the functional layer is located between the second barrier layer and the potential well layer.

[0007] Optionally, the thicknesses of the first barrier layer, the potential well layer, the second barrier layer, and the functional layer are all between 0.1 nm and 20 nm.

[0008] Optionally, the potential well layer includes at least two potential well sublayers, and any two adjacent potential well sublayers are made of different materials.

[0009] Optionally, the material of the first barrier layer and / or the second barrier layer is selected from Ga2O3 or Al2O3, and the material of the potential well sublayer is selected from In2O3 or SnO2.

[0010] Optionally, the thicknesses of the first barrier layer, the second barrier layer, the potential well layer, and the functional layer are all between 0.1 nm and 20 nm.

[0011] Optionally, the first barrier layer includes at least two first barrier sublayers, any two adjacent first barrier sublayers being made of different materials; and / or the second barrier layer includes at least two second barrier sublayers, any two adjacent second barrier sublayers being made of different materials.

[0012] Optionally, the material of the first barrier sublayer and / or the second barrier sublayer is selected from Ga2O3 or Al2O3, and the material of the potential well layer is selected from In2O3 or SnO2.

[0013] Optionally, the thicknesses of the first barrier sublayer, the second barrier sublayer, the potential well layer, and the functional layer are all between 0.1 nm and 20 nm.

[0014] Optionally, the potential well layer includes at least two potential well sublayers, and any two adjacent potential well sublayers are made of different materials; the first barrier layer includes at least two first barrier sublayers, and any two adjacent first barrier sublayers are made of different materials; and the second barrier layer includes at least two second barrier sublayers, and any two adjacent second barrier sublayers are made of different materials.

[0015] Optionally, the material of the first barrier sublayer and / or the second barrier sublayer is selected from Ga2O3 or Al2O3, and the material of the potential well sublayer is selected from In2O3 or SnO2.

[0016] Optionally, the thicknesses of the first barrier sublayer, the second barrier sublayer, the potential well sublayer, and the functional layer are all between 0.1 nm and 20 nm.

[0017] Optionally, the molecular formula of the material of the functional layer is PrOx or TaOx, where 2≤x≤3.

[0018] On the other hand, this disclosure provides a metal oxide film layer, comprising: a first barrier layer; a potential well layer located on one side of the first barrier layer; and a second barrier layer located on the side of the potential well layer away from the first barrier layer, wherein the first barrier layer, the potential well layer, and the second barrier layer are all made of metal oxide, the conduction band energy level of the potential well layer is lower than the conduction band energy level of the first barrier layer and lower than the conduction band energy level of the second barrier layer, and the material of the potential well layer includes praseodymium or tantalum.

[0019] Optionally, the materials of the first barrier layer and / or the second barrier layer are selected from Ga2O3 or Al2O3, and the molecular formula of the potential well layer is InPrO.x Or InTaO x , where 1≤x≤3.

[0020] Optionally, the thicknesses of the first barrier sublayer, the second barrier sublayer, and the potential well sublayer are all between 0.1 nm and 20 nm.

[0021] Optionally, the metal oxide film is formed by atomic layer deposition.

[0022] On the other hand, this disclosure provides a thin-film transistor including an active layer, wherein the active layer is made of the aforementioned metal oxide film layer. Attached Figure Description

[0023] The following figures are merely illustrative examples based on various disclosed embodiments and are not intended to limit the scope of the invention.

[0024] Figure 1A is a schematic diagram of a metal oxide film layer according to some embodiments of the present disclosure.

[0025] Figure 1B is a schematic diagram of a metal oxide film layer according to some embodiments of the present disclosure.

[0026] Figure 2A is a schematic diagram of a metal oxide film layer according to some other embodiments of the present disclosure.

[0027] Figure 2B is a schematic diagram of a metal oxide film layer according to some other embodiments of the present disclosure.

[0028] Figure 2C is a schematic diagram of a metal oxide film layer according to some other embodiments of the present disclosure.

[0029] Figure 2D is a schematic diagram of a metal oxide film layer according to some other embodiments of the present disclosure.

[0030] Figure 3A is a schematic diagram of a metal oxide film layer according to some other embodiments of the present disclosure.

[0031] Figure 3B is a schematic diagram of a metal oxide film layer according to some other embodiments of the present disclosure.

[0032] Figure 4A is a schematic diagram of a metal oxide film layer according to some other embodiments of the present disclosure.

[0033] Figure 4B is a schematic diagram of a metal oxide film layer according to some other embodiments of the present disclosure.

[0034] Figure 5 is a schematic diagram of a metal oxide film layer according to some other embodiments of the present disclosure. Detailed Implementation

[0035] This disclosure will now be described in more detail with reference to the following embodiments. It should be noted that the following description of some embodiments presented herein is for illustrative and descriptive purposes only. It is not exhaustive or limited to the precise forms disclosed.

[0036] This disclosure provides, in particular, a metal oxide film and a thin-film transistor that substantially eliminates one or more problems caused by the limitations and disadvantages of the prior art. In one aspect, this disclosure provides a metal oxide film comprising: a first barrier layer; a potential well layer located on one side of the first barrier layer; and a second barrier layer located on the side of the potential well layer away from the first barrier layer, wherein the first barrier layer, the potential well layer, and the second barrier layer are all made of metal oxide, and the conduction band energy level of the potential well layer is lower than the conduction band energy level of the first barrier layer and also lower than the conduction band energy level of the second barrier layer. Optionally, the metal oxide film further comprises a functional layer, wherein the functional layer is located on the side of the potential well layer away from the first barrier layer, and the material of the functional layer is selected from praseodymium or tantalum oxide. Optionally, the metal oxide film does not include a functional layer, and the material of the potential well layer comprises praseodymium or tantalum.

[0037] Figure 1A is a schematic diagram of a metal oxide film layer according to some embodiments of the present disclosure. Referring to Figure 1A, in some embodiments, the metal oxide film layer includes: a first barrier layer 1; a potential well layer 2 located on one side of the first barrier layer 1; a second barrier layer 3 located on the side of the potential well layer 2 away from the first barrier layer 1; and a functional layer 4 located on the side of the potential well layer 2 away from the first barrier layer 1, wherein the materials of the first barrier layer 1, the potential well layer 2, and the second barrier layer 3 are all metal oxides, the conduction band energy level of the potential well layer 2 is lower than the conduction band energy level of the first barrier layer 1, and is lower than the conduction band energy level of the second barrier layer 3, and the material of the functional layer 4 is selected from praseodymium or tantalum oxide.

[0038] In some embodiments, the materials of the first barrier layer 1 and / or the second barrier layer 3 are selected from Ga2O3 or Al2O3, the material of the potential well layer 2 is selected from In2O3 or SnO2, and the molecular formula of the functional layer material is PrO2. x Or TaO x , where 2≤x≤3. As shown in Figure 1A, the functional layer 4 is located on the side of the second barrier layer 3 away from the potential well layer 2.

[0039] In one example, the materials of the first barrier layer 1, the potential well layer 2, the second barrier layer 3, and the functional layer 4 are Ga2O3, In2O3, Ga2O3, and PrO, respectively. x Where 2 ≤ x ≤ 3. In another example, the materials of the first barrier layer 1, the potential well layer 2, the second barrier layer 3, and the functional layer 4 are Ga2O3, In2O3, Ga2O3, and TaO, respectively. x , where 2≤x≤3.

[0040] In one example, the materials of the first barrier layer 1, the potential well layer 2, the second barrier layer 3, and the functional layer 4 are Ga2O3, SnO2, Ga2O3, and PrO, respectively. x Where 2 ≤ x ≤ 3. In another example, the materials of the first barrier layer 1, the potential well layer 2, the second barrier layer 3, and the functional layer 4 are Ga2O3, SnO2, Ga2O3, and TaO, respectively. x , where 2≤x≤3.

[0041] In one example, the materials of the first barrier layer 1, the potential well layer 2, the second barrier layer 3, and the functional layer 4 are Al2O3, In2O3, Al2O3, and PrO, respectively. x Where 2 ≤ x ≤ 3. In another example, the materials of the first barrier layer 1, the potential well layer 2, the second barrier layer 3, and the functional layer 4 are Al2O3, In2O3, Al2O3, and TaO, respectively. x , where 2≤x≤3.

[0042] In one example, the materials of the first barrier layer 1, the potential well layer 2, the second barrier layer 3, and the functional layer 4 are Al2O3, SnO2, Al2O3, and PrO, respectively. x Where 2 ≤ x ≤ 3. In another example, the materials of the first barrier layer 1, the potential well layer 2, the second barrier layer 3, and the functional layer 4 are Al2O3, SnO2, Al2O3, and TaO, respectively. x , where 2≤x≤3.

[0043] Of course, the materials of the first barrier layer 1, the well layer 2, the second barrier layer 3, and the functional layer 4 can also have other different combinations. As long as the materials of the first barrier layer 1, the well layer 2, and the second barrier layer 3 are all metal oxides, the conduction band energy level of the well layer 2 is lower than the conduction band energy level of the first barrier layer 1 and lower than the conduction band energy level of the second barrier layer 3, and the material of the functional layer 4 is selected from praseodymium or tantalum oxide, this disclosure does not impose too many restrictions on the combination of materials of the first barrier layer 1, the well layer 2, the second barrier layer 3, and the functional layer 4.

[0044] In some embodiments, a first barrier layer 1, a potential well layer 2, a second barrier layer 3, and a functional layer 4 are formed by atomic layer deposition (ALD). The thicknesses of the first barrier layer 1, the potential well layer 2, the second barrier layer 3, and the functional layer 4 are all between 0.1 nm and 20 nm.

[0045] Figure 1B is a schematic diagram of a metal oxide film layer according to some embodiments of the present disclosure. Referring to Figure 1B, in some embodiments, the metal oxide film layer includes: a first barrier layer 1; a potential well layer 2 located on one side of the first barrier layer 1; a second barrier layer 3 located on the side of the potential well layer 2 away from the first barrier layer 1; and a functional layer 4 located on the side of the potential well layer 2 away from the first barrier layer 1, wherein the materials of the first barrier layer 1, the potential well layer 2, and the second barrier layer 3 are all metal oxides, the conduction band energy level of the potential well layer 2 is lower than the conduction band energy level of the first barrier layer 1, and is lower than the conduction band energy level of the second barrier layer 3, and the material of the functional layer 4 is selected from praseodymium or tantalum oxide.

[0046] In some embodiments, the materials of the first barrier layer 1 and / or the second barrier layer 3 are selected from Ga2O3 or Al2O3, the material of the potential well layer 2 is selected from In2O3 or SnO2, and the molecular formula of the functional layer material is PrO2. x Or TaO x Where 2≤x≤3. As shown in Figure 1B, functional layer 4 is located between the second barrier layer 3 and the potential well layer 2.

[0047] In one example, the materials of the first barrier layer 1, the potential well layer 2, the functional layer 4, and the second barrier layer 3 are Ga2O3, In2O3, and PrO, respectively. x And Ga2O3, where 2≤x≤3. In another example, the materials of the first barrier layer 1, the potential well layer 2, the functional layer 4, and the second barrier layer 3 are Ga2O3, In2O3, and TaO, respectively. x , and Ga2O3, where 2≤x≤3.

[0048] In one example, the materials of the first barrier layer 1, the potential well layer 2, the functional layer 4, and the second barrier layer 3 are Ga2O3, SnO2, and PrO, respectively. x And Ga2O3, where 2≤x≤3. In another example, the materials of the first barrier layer 1, the potential well layer 2, the functional layer 4, and the second barrier layer 3 are Ga2O3, SnO2, and TaO, respectively. x , and Ga2O3, where 2≤x≤3.

[0049] In one example, the materials of the first barrier layer 1, the potential well layer 2, the functional layer 4, and the second barrier layer 3 are Al2O3, In2O3, and PrO, respectively. x And Al2O3, where 2≤x≤3. In another example, the materials of the first barrier layer 1, the potential well layer 2, the functional layer 4, and the second barrier layer 3 are Al2O3, In2O3, and TaO, respectively. x , and Al2O3, where 2≤x≤3.

[0050] In one example, the materials of the first barrier layer 1, the potential well layer 2, the functional layer 4, and the second barrier layer 3 are Al2O3, SnO2, and PrO, respectively. x And Al2O3, where 2≤x≤3. In another example, the materials of the first barrier layer 1, the potential well layer 2, the functional layer 4, and the second barrier layer 3 are Al2O3, SnO2, and TaO, respectively. x , and Al2O3, where 2≤x≤3.

[0051] Of course, the materials of the first barrier layer 1, the well layer 2, the functional layer 4, and the second barrier layer 3 can also have other different combinations. As long as the materials of the first barrier layer 1, the well layer 2, and the second barrier layer 3 are all metal oxides, the conduction band energy level of the well layer 2 is lower than the conduction band energy level of the first barrier layer 1 and lower than the conduction band energy level of the second barrier layer 3, and the material of the functional layer 4 is selected from praseodymium or tantalum oxide, this disclosure does not impose too many restrictions on the combination of materials of the first barrier layer 1, the well layer 2, the functional layer 4, and the second barrier layer 3.

[0052] In some embodiments, a first barrier layer 1, a potential well layer 2, a functional layer 4, and a second barrier layer 3 are formed by atomic layer deposition (ALD). The thicknesses of the first barrier layer 1, the potential well layer 2, the functional layer 4, and the second barrier layer 3 are all between 0.1 nm and 20 nm.

[0053] Figure 2A is a schematic diagram of a metal oxide film layer according to some other embodiments of the present disclosure. Referring to Figure 2A, in some embodiments, the metal oxide film layer includes: a first barrier layer 1; a potential well sublayer 2-1 located on one side of the first barrier layer 1; a potential well sublayer 2-2 located on the side of the potential well sublayer 2-1 away from the first barrier layer 1; a second barrier layer 3 located on the side of the potential well sublayer 2-2 away from the first barrier layer 1; and a functional layer 4 located on the side of the potential well sublayer 2-2 away from the first barrier layer 1, wherein the materials of the first barrier layer 1, the potential well sublayer 2-1, the potential well sublayer 2-2, and the second barrier layer 3 are all metal oxides, the conduction band energy levels of the potential well sublayer 2-1 and the potential well sublayer 2-2 are lower than the conduction band energy level of the first barrier layer 1 and lower than the conduction band energy level of the second barrier layer 3, and the material of the functional layer 4 is selected from praseodymium or tantalum oxide.

[0054] In some embodiments, the materials of the first barrier layer 1 and / or the second barrier layer 3 are selected from Ga2O3 or Al2O3, and the materials of the potential well sublayer 2-1 and potential well sublayer 2-2 are selected from In2O3 or SnO2. The materials of potential well sublayer 2-1 and potential well sublayer 2-2 are different from each other. The molecular formula of the functional layer material is PrO. x Or TaO x , where 2≤x≤3.

[0055] In one example, the materials of the first barrier layer 1, the potential well sublayer 2-1, the potential well sublayer 2-2, the second barrier layer 3, and the functional layer 4 are Ga2O3, In2O3, SnO2, Ga2O3, and PrO, respectively. x Where 2 ≤ x ≤ 3. In another example, the materials of the first barrier layer 1, the potential well sublayer 2-1, the potential well sublayer 2-2, the second barrier layer 3, and the functional layer 4 are Ga2O3, In2O3, SnO2, Ga2O3, and TaO, respectively. x , where 2≤x≤3.

[0056] Of course, the materials of the first barrier layer 1, the potential well sublayer 2-1, the potential well sublayer 2-2, the second barrier layer 3, and the functional layer 4 can also have other different combinations. As long as the materials of the first barrier layer 1, the potential well sublayer 2-1, the potential well sublayer 2-2, and the second barrier layer 3 are all metal oxides, the conduction band energy levels of the potential well sublayer 2-1 and the potential well sublayer 2-2 are lower than the conduction band energy level of the first barrier layer 1 and lower than the conduction band energy level of the second barrier layer 3, and the material of the functional layer 4 is selected from praseodymium or tantalum oxide, this disclosure does not impose too many restrictions on the combination of materials of the first barrier layer 1, the potential well sublayer 2-1, the potential well sublayer 2-2, the second barrier layer 3, and the functional layer 4.

[0057] In some embodiments, a first barrier layer 1, a potential well sublayer 2-1, a potential well sublayer 2-2, a second barrier layer 3, and a functional layer 4 are formed by atomic layer deposition (ALD). The thicknesses of the first barrier layer 1, the potential well sublayer 2-1, the potential well sublayer 2-2, the second barrier layer 3, and the functional layer 4 are all in the range of 0.1 nm to 20 nm.

[0058] Figure 2A is a schematic diagram of a metal oxide film layer according to some other embodiments of the present disclosure. Referring to Figure 2A, in some embodiments, the metal oxide film layer includes: a first barrier layer 1; a potential well sublayer 2-1 located on one side of the first barrier layer 1; a potential well sublayer 2-2 located on the side of the potential well sublayer 2-1 away from the first barrier layer 1; a second barrier layer 3 located on the side of the potential well sublayer 2-2 away from the potential well sublayer 2-1; and a functional layer 4 located on the side of the second barrier layer 3 away from the potential well sublayer 2-2, wherein the materials of the first barrier layer 1, the potential well sublayer 2-1, the potential well sublayer 2-2, and the second barrier layer 3 are all metal oxides, the conduction band energy levels of the potential well sublayer 2-1 and the potential well sublayer 2-2 are lower than the conduction band energy level of the first barrier layer 1 and lower than the conduction band energy level of the second barrier layer 3, and the material of the functional layer 4 is selected from praseodymium or tantalum oxide.

[0059] In some embodiments, the materials of the first barrier layer 1 and / or the second barrier layer 3 are selected from Ga2O3 or Al2O3, and the materials of the potential well sublayer 2-1 and potential well sublayer 2-2 are selected from In2O3 or SnO2. The materials of potential well sublayer 2-1 and potential well sublayer 2-2 are different from each other. The molecular formula of the functional layer material is PrO. x Or TaO x , where 2≤x≤3.

[0060] In one example, the materials of the first barrier layer 1, the potential well sublayer 2-1, the potential well sublayer 2-2, the second barrier layer 3, and the functional layer 4 are Ga2O3, In2O3, SnO2, Ga2O3, and PrO, respectively. x Where 2 ≤ x ≤ 3. In another example, the materials of the first barrier layer 1, the potential well sublayer 2-1, the potential well sublayer 2-2, the second barrier layer 3, and the functional layer 4 are Ga2O3, In2O3, SnO2, Ga2O3, and TaO, respectively. x , where 2≤x≤3.

[0061] Of course, the materials of the first barrier layer 1, the potential well sublayer 2-1, the potential well sublayer 2-2, the second barrier layer 3, and the functional layer 4 can also have other different combinations. As long as the materials of the first barrier layer 1, the potential well sublayer 2-1, the potential well sublayer 2-2, and the second barrier layer 3 are all metal oxides, the conduction band energy levels of the potential well sublayer 2-1 and the potential well sublayer 2-2 are lower than the conduction band energy level of the first barrier layer 1 and lower than the conduction band energy level of the second barrier layer 3, and the material of the functional layer 4 is selected from praseodymium or tantalum oxide, this disclosure does not impose too many restrictions on the combination of materials of the first barrier layer 1, the potential well sublayer 2-1, the potential well sublayer 2-2, the second barrier layer 3, and the functional layer 4.

[0062] In some embodiments, a first barrier layer 1, a potential well sublayer 2-1, a potential well sublayer 2-2, a second barrier layer 3, and a functional layer 4 are formed by atomic layer deposition (ALD). The thicknesses of the first barrier layer 1, the potential well sublayer 2-1, the potential well sublayer 2-2, the second barrier layer 3, and the functional layer 4 are all in the range of 0.1 nm to 20 nm.

[0063] Figure 2B is a schematic diagram of a metal oxide film layer according to some other embodiments of the present disclosure. Referring to Figure 2B, in some embodiments, the metal oxide film layer includes: a first barrier layer 1; a potential well sublayer 2-1 located on one side of the first barrier layer 1; a potential well sublayer 2-2 located on the side of the potential well sublayer 2-1 away from the first barrier layer 1; a potential well sublayer 2-3 located on the side of the potential well sublayer 2-2 away from the potential well sublayer 2-1; a second barrier layer 3 located on the side of the potential well sublayer 2-3 away from the potential well sublayer 2-2; and a functional layer 4. It is located on the side of the second barrier layer 3 away from the potential well sublayer 2-3. The materials of the first barrier layer 1, potential well sublayer 2-1, potential well sublayer 2-2, potential well sublayer 2-3, and the second barrier layer 3 are all metal oxides. The conduction band energy levels of potential well sublayer 2-1, potential well sublayer 2-2, and potential well sublayer 2-3 are lower than the conduction band energy level of the first barrier layer 1 and lower than the conduction band energy level of the second barrier layer 3. The material of the functional layer 4 is selected from praseodymium or tantalum oxide.

[0064] In some embodiments, the materials of the first barrier layer 1 and / or the second barrier layer 3 are selected from Ga2O3 or Al2O3, and the materials of potential well sublayers 2-1, 2-2, and 2-3 are selected from In2O3 or SnO2. The materials of any two adjacent potential well sublayers are different from each other. For example, the materials of potential well sublayers 2-1 and 2-2 are different from each other, and the materials of potential well sublayers 2-2 and 2-3 are different from each other. The molecular formula of the functional layer material is PrO. x Or TaO x , where 2≤x≤3.

[0065] In one example, the materials of the first barrier layer 1, potential well sublayer 2-1, potential well sublayer 2-2, potential well sublayer 2-3, second barrier layer 3, and functional layer 4 are Ga2O3, In2O3, SnO2, In2O3, Ga2O3, and PrO, respectively. x Where 2 ≤ x ≤ 3. In another example, the materials of the first barrier layer 1, potential well sublayer 2-1, potential well sublayer 2-2, potential well sublayer 2-3, second barrier layer 3, and functional layer 4 are Ga2O3, In2O3, SnO2, In2O3, Ga2O3, and TaO, respectively. x , where 2≤x≤3.

[0066] In one example, the materials of the first barrier layer 1, potential well sublayer 2-1, potential well sublayer 2-2, potential well sublayer 2-3, second barrier layer 3, and functional layer 4 are Ga2O3, SnO2, In2O3, SnO2, Ga2O3, and PrO2, respectively. xWhere 2 ≤ x ≤ 3. In another example, the materials of the first barrier layer 1, potential well sublayer 2-1, potential well sublayer 2-2, potential well sublayer 2-3, second barrier layer 3, and functional layer 4 are Ga2O3, SnO2, In2O3, SnO2, Ga2O3, and TaO, respectively. x , where 2≤x≤3.

[0067] Of course, the materials of the first barrier layer 1, potential well sublayer 2-1, potential well sublayer 2-2, potential well sublayer 2-3, second barrier layer 3, and functional layer 4 can also have other different combinations. As long as the materials of the first barrier layer 1, potential well sublayer 2-1, potential well sublayer 2-2, potential well sublayer 2-3, and second barrier layer 3 are all metal oxides, the conduction band energy levels of potential well sublayer 2-1, potential well sublayer 2-2, and potential well sublayer 2-3 are lower than the conduction band energy level of the first barrier layer 1 and lower than the conduction band energy level of the second barrier layer 3, and the material of functional layer 4 is selected from praseodymium or tantalum oxide, this disclosure does not impose too many restrictions on the combination of materials of the first barrier layer 1, potential well sublayer 2-1, potential well sublayer 2-2, potential well sublayer 2-3, second barrier layer 3, and functional layer 4.

[0068] In some embodiments, a first barrier layer 1, a potential well sublayer 2-1, a potential well sublayer 2-2, a potential well sublayer 2-3, a second barrier layer 3, and a functional layer 4 are formed by atomic layer deposition (ALD). The thicknesses of the first barrier layer 1, the potential well sublayer 2-1, the potential well sublayer 2-2, the potential well sublayer 2-3, the second barrier layer 3, and the functional layer 4 are all between 0.1 nm and 20 nm.

[0069] Figure 2C is a schematic diagram of a metal oxide film layer according to some other embodiments of the present disclosure. Referring to Figure 2C, in some embodiments, the metal oxide film layer includes: a first barrier layer 1; a potential well sublayer 2-1 located on one side of the first barrier layer 1; a potential well sublayer 2-2 located on the side of the potential well sublayer 2-1 away from the first barrier layer 1; a functional layer 4 located on the side of the potential well sublayer 2-2 away from the potential well sublayer 2-1; and a second barrier layer 3 located on the side of the functional layer 4 away from the potential well sublayer 2-2, wherein the materials of the first barrier layer 1, the potential well sublayer 2-1, the potential well sublayer 2-2, and the second barrier layer 3 are all metal oxides, the conduction band energy levels of the potential well sublayer 2-1 and the potential well sublayer 2-2 are lower than the conduction band energy level of the first barrier layer 1 and lower than the conduction band energy level of the second barrier layer 3, and the material of the functional layer 4 is selected from praseodymium or tantalum oxide.

[0070] In some embodiments, the materials of the first barrier layer 1 and / or the second barrier layer 3 are selected from Ga2O3 or Al2O3, and the materials of the potential well sublayer 2-1 and potential well sublayer 2-2 are selected from In2O3 or SnO2. The materials of potential well sublayer 2-1 and potential well sublayer 2-2 are different from each other. The molecular formula of the functional layer material is PrO.x Or TaO x , where 2≤x≤3.

[0071] In one example, the materials of the first barrier layer 1, the potential well sublayer 2-1, the potential well sublayer 2-2, the functional layer 4, and the second barrier layer 3 are Ga2O3, In2O3, SnO2, and PrO, respectively. x And Ga2O3, where 2≤x≤3. In another example, the materials of the first barrier layer 1, the potential well sublayer 2-1, the potential well sublayer 2-2, the functional layer 4, and the second barrier layer 3 are Ga2O3, In2O3, SnO2, and TaO, respectively. x , and Ga2O3, where 2≤x≤3.

[0072] Of course, the materials of the first barrier layer 1, the potential well sublayer 2-1, the potential well sublayer 2-2, the functional layer 4, and the second barrier layer 3 can also have other different combinations. As long as the materials of the first barrier layer 1, the potential well sublayer 2-1, the potential well sublayer 2-2, and the second barrier layer 3 are all metal oxides, the conduction band energy levels of the potential well sublayer 2-1 and the potential well sublayer 2-2 are lower than the conduction band energy level of the first barrier layer 1 and lower than the conduction band energy level of the second barrier layer 3, and the material of the functional layer 4 is selected from praseodymium or tantalum oxide, this disclosure does not impose too many restrictions on the combination of the materials of the first barrier layer 1, the potential well sublayer 2-1, the potential well sublayer 2-2, the functional layer 4, and the second barrier layer 3.

[0073] In some embodiments, a first barrier layer 1, a potential well sublayer 2-1, a potential well sublayer 2-2, a functional layer 4, and a second barrier layer 3 are formed by atomic layer deposition (ALD). The thicknesses of the first barrier layer 1, the potential well sublayer 2-1, the potential well sublayer 2-2, the functional layer 4, and the second barrier layer 3 are all between 0.1 nm and 20 nm.

[0074] Figure 2D is a schematic diagram of a metal oxide film layer according to some other embodiments of the present disclosure. Referring to Figure 2D, in some embodiments, the metal oxide film layer includes: a first barrier layer 1; a potential well sublayer 2-1 located on one side of the first barrier layer 1; a potential well sublayer 2-2 located on the side of the potential well sublayer 2-1 away from the first barrier layer 1; a potential well sublayer 2-3 located on the side of the potential well sublayer 2-2 away from the potential well sublayer 2-1; a functional layer 4 located on the side of the potential well sublayer 2-3 away from the potential well sublayer 2-2; and a second barrier layer 3. It is located on the side of the functional layer 4 away from the potential well sublayer 2-3. The materials of the first barrier layer 1, potential well sublayer 2-1, potential well sublayer 2-2, potential well sublayer 2-3 and the second barrier layer 3 are all metal oxides. The conduction band energy levels of potential well sublayer 2-1, potential well sublayer 2-2 and potential well sublayer 2-3 are lower than the conduction band energy level of the first barrier layer 1 and lower than the conduction band energy level of the second barrier layer 3. The material of the functional layer 4 is selected from praseodymium or tantalum oxide.

[0075] In some embodiments, the materials of the first barrier layer 1 and / or the second barrier layer 3 are selected from Ga2O3 or Al2O3, and the materials of potential well sublayers 2-1, 2-2, and 2-3 are selected from In2O3 or SnO2. The materials of any two adjacent potential well sublayers are different from each other. For example, the materials of potential well sublayers 2-1 and 2-2 are different from each other, and the materials of potential well sublayers 2-2 and 2-3 are different from each other. The molecular formula of the functional layer material is PrO. x Or TaO x , where 2≤x≤3.

[0076] In one example, the materials of the first barrier layer 1, potential well sublayer 2-1, potential well sublayer 2-2, potential well sublayer 2-3, functional layer 4, and second barrier layer 3 are Ga2O3, In2O3, SnO2, In2O3, and PrO, respectively. x And Ga2O3, where 2≤x≤3. In another example, the materials of the first barrier layer 1, potential well sublayer 2-1, potential well sublayer 2-2, potential well sublayer 2-3, functional layer 4, and second barrier layer 3 are Ga2O3, In2O3, SnO2, In2O3, and TaO, respectively. x , and Ga2O3, where 2≤x≤3.

[0077] In one example, the materials of the first barrier layer 1, potential well sublayer 2-1, potential well sublayer 2-2, potential well sublayer 2-3, functional layer 4, and second barrier layer 3 are Ga2O3, SnO2, In2O3, SnO2, and PrO2, respectively. xAnd Ga2O3, where 2≤x≤3. In another example, the materials of the first barrier layer 1, potential well sublayer 2-1, potential well sublayer 2-2, potential well sublayer 2-3, functional layer 4, and second barrier layer 3 are Ga2O3, SnO2, In2O3, SnO2, and TaO, respectively. x , and Ga2O3, where 2≤x≤3.

[0078] Of course, the materials of the first barrier layer 1, potential well sublayer 2-1, potential well sublayer 2-2, potential well sublayer 2-3, functional layer 4, and second barrier layer 3 can also have other different combinations. As long as the materials of the first barrier layer 1, potential well sublayer 2-1, potential well sublayer 2-2, potential well sublayer 2-3, and second barrier layer 3 are all metal oxides, the conduction band energy levels of potential well sublayer 2-1, potential well sublayer 2-2, and potential well sublayer 2-3 are lower than the conduction band energy level of the first barrier layer 1 and lower than the conduction band energy level of the second barrier layer 3, and the material of the functional layer 4 is selected from praseodymium or tantalum oxide, this disclosure does not impose too many restrictions on the combination of materials of the first barrier layer 1, potential well sublayer 2-1, potential well sublayer 2-2, potential well sublayer 2-3, functional layer 4, and second barrier layer 3.

[0079] In some embodiments, a first barrier layer 1, a potential well sublayer 2-1, a potential well sublayer 2-2, a potential well sublayer 2-3, a functional layer 4, and a second barrier layer 3 are formed by atomic layer deposition (ALD). The thicknesses of the first barrier layer 1, the potential well sublayer 2-1, the potential well sublayer 2-2, the potential well sublayer 2-3, the functional layer 4, and the second barrier layer 3 are all between 0.1 nm and 20 nm.

[0080] In the above embodiments, the potential well layer 2 includes at least two potential well sub-layers, and any two adjacent potential well sub-layers are made of different materials. The materials of the first barrier layer 1 and / or the second barrier layer 2 are selected from Ga2O3 or Al2O3, and the materials of the potential well sub-layers are selected from In2O3 or SnO2.

[0081] Figure 3A is a schematic diagram of a metal oxide film layer according to some other embodiments of the present disclosure. Referring to Figure 3A, in some embodiments, the metal oxide film layer includes: a first barrier sublayer 1-1; a first barrier sublayer 1-2 located on one side of the first barrier sublayer 1-1; a potential well layer 2 located on the side of the first barrier sublayer 1-2 away from the first barrier sublayer 1-1; a second barrier sublayer 3-1 located on the side of the potential well layer 2 away from the first barrier sublayer 1-2; a second barrier sublayer 3-2 located on the side of the second barrier sublayer 3-1 away from the potential well layer 2; and a functional layer 4 located on... On the side of the second barrier sublayer 3-2 away from the second barrier sublayer 3-1, wherein the materials of the first barrier sublayer 1-1, the first barrier sublayer 1-2, the potential well layer 2, the second barrier sublayer 3-1 and the second barrier sublayer 3-2 are all metal oxides, the conduction band energy level of the potential well layer 2 is lower than the conduction band energy levels of the first barrier sublayer 1-1 and the first barrier sublayer 1-2, and is also lower than the conduction band energy levels of the second barrier sublayer 3-1 and the second barrier sublayer 3-2, and the material of the functional layer 4 is selected from praseodymium or tantalum oxides.

[0082] In some embodiments, the materials of the first barrier sublayer 1-1, the first barrier sublayer 1-2, the second barrier sublayer 3-1, and the second barrier sublayer 3-2 are selected from Ga2O3 or Al2O3, the material of the potential well layer 2 is selected from In2O3 or SnO2, and the molecular formula of the functional layer material is PrO2. x Or TaO x , where 2≤x≤3. The materials of the first barrier sublayer 1-1 and the first barrier sublayer 1-2 are different from each other. The materials of the second barrier sublayer 3-1 and the second barrier sublayer 3-2 are different from each other.

[0083] In one example, the materials of the first barrier sublayer 1-1, the first barrier sublayer 1-2, the potential well layer 2, the second barrier sublayer 3-1, the second barrier sublayer 3-2, and the functional layer 4 are Al2O3, Ga2O3, SnO2, Ga2O3, Al2O3, and PrO2, respectively. x Where 2 ≤ x ≤ 3. In another example, the materials of the first barrier sublayer 1-1, the first barrier sublayer 1-2, the potential well layer 2, the second barrier sublayer 3-1, the second barrier sublayer 3-2, and the functional layer 4 are Al2O3, Ga2O3, SnO2, Ga2O3, Al2O3, and TaO, respectively. x , where 2≤x≤3.

[0084] In one example, the materials of the first barrier sublayer 1-1, the first barrier sublayer 1-2, the potential well layer 2, the second barrier sublayer 3-1, the second barrier sublayer 3-2, and the functional layer 4 are Al2O3, Ga2O3, In2O3, Ga2O3, Al2O3, and PrO, respectively. xWhere 2 ≤ x ≤ 3. In another example, the materials of the first barrier sublayer 1-1, the first barrier sublayer 1-2, the potential well layer 2, the second barrier sublayer 3-1, the second barrier sublayer 3-2, and the functional layer 4 are Al2O3, Ga2O3, In2O3, Ga2O3, Al2O3, and TaO, respectively. x , where 2≤x≤3.

[0085] Of course, the materials of the first barrier sublayer 1-1, the first barrier sublayer 1-2, the potential well layer 2, the second barrier sublayer 3-1, the second barrier sublayer 3-2, and the functional layer 4 can have other different combinations. As long as the materials of the first barrier sublayer 1-1, the first barrier sublayer 1-2, the potential well layer 2, the second barrier sublayer 3-1, and the second barrier sublayer 3-2 are all metal oxides, the conduction band energy level of the potential well layer 2 is lower than the conduction band energy levels of the first barrier sublayer 1-1 and the first barrier sublayer 1-2, and is also lower than the conduction band energy levels of the second barrier sublayer 3-1 and the second barrier sublayer 3-2, and the material of the functional layer 4 is selected from praseodymium or tantalum oxides, this disclosure does not impose too many restrictions on the combination of materials of the first barrier sublayer 1-1, the first barrier sublayer 1-2, the potential well layer 2, the second barrier sublayer 3-1, the second barrier sublayer 3-2, and the functional layer 4.

[0086] In some embodiments, a first barrier sublayer 1-1, a first barrier sublayer 1-2, a potential well layer 2, a second barrier sublayer 3-1, a second barrier sublayer 3-2, and a functional layer 4 are formed by atomic layer deposition (ALD). The thicknesses of the first barrier sublayer 1-1, the first barrier sublayer 1-2, the potential well layer 2, the second barrier sublayer 3-1, the second barrier sublayer 3-2, and the functional layer 4 are all between 0.1 nm and 20 nm.

[0087] Figure 3B is a schematic diagram of a metal oxide film layer according to some other embodiments of the present disclosure. Referring to Figure 3B, in some embodiments, the metal oxide film layer includes: a first barrier sublayer 1-1; a first barrier sublayer 1-2 located on one side of the first barrier sublayer 1-1; a potential well layer 2 located on the side of the first barrier sublayer 1-2 away from the first barrier sublayer 1-1; a functional layer 4 located on the side of the potential well layer 2 away from the first barrier sublayer 1-2; a second barrier sublayer 3-1 located on the side of the functional layer 4 away from the potential well layer 2; and a second barrier sublayer 3-2 located on the side of the functional layer 4 away from the potential well layer 2. On the side of the second barrier sublayer 3-1 away from the functional layer 4, the materials of the first barrier sublayer 1-1, the first barrier sublayer 1-2, the potential well layer 2, the second barrier sublayer 3-1 and the second barrier sublayer 3-2 are all metal oxides. The conduction band energy level of the potential well layer 2 is lower than the conduction band energy levels of the first barrier sublayer 1-1 and the first barrier sublayer 1-2, and is also lower than the conduction band energy levels of the second barrier sublayer 3-1 and the second barrier sublayer 3-2. The material of the functional layer 4 is selected from praseodymium or tantalum oxides.

[0088] In some embodiments, the materials of the first barrier sublayer 1-1, the first barrier sublayer 1-2, the second barrier sublayer 3-1, and the second barrier sublayer 3-2 are selected from Ga2O3 or Al2O3, the material of the potential well layer 2 is selected from In2O3 or SnO2, and the molecular formula of the functional layer material is PrO2. x Or TaO x , where 2≤x≤3. The materials of the first barrier sublayer 1-1 and the first barrier sublayer 1-2 are different from each other. The materials of the second barrier sublayer 3-1 and the second barrier sublayer 3-2 are different from each other.

[0089] In one example, the materials of the first barrier sublayer 1-1, the first barrier sublayer 1-2, the potential well layer 2, the functional layer 4, the second barrier sublayer 3-1, and the second barrier sublayer 3-2 are Al2O3, Ga2O3, In2O3, and PrO, respectively. x The materials are Ga2O3 and Al2O3, where 2 ≤ x ≤ 3. In another example, the materials of the first barrier sublayer 1-1, the first barrier sublayer 1-2, the potential well layer 2, the functional layer 4, the second barrier sublayer 3-1, and the second barrier sublayer 3-2 are Al2O3, Ga2O3, In2O3, and PrO3, respectively. x The elements are Ga2O3 and Al2O3, where 2≤x≤3.

[0090] In one example, the materials of the first barrier sublayer 1-1, the first barrier sublayer 1-2, the potential well layer 2, the functional layer 4, the second barrier sublayer 3-1, and the second barrier sublayer 3-2 are Al2O3, Ga2O3, SnO2, and PrO, respectively. x The materials are Ga2O3 and Al2O3, where 2 ≤ x ≤ 3. In another example, the materials of the first barrier sublayer 1-1, the first barrier sublayer 1-2, the potential well layer 2, the functional layer 4, the second barrier sublayer 3-1, and the second barrier sublayer 3-2 are Al2O3, Ga2O3, SnO2, and PrO2, respectively. x The elements are Ga2O3 and Al2O3, where 2≤x≤3.

[0091] Of course, the materials of the first barrier layer 1-1, the first barrier layer 1-2, the potential well layer 2, the functional layer 4, the second barrier layer 3-1, and the second barrier layer 3-2 can have other different combinations. As long as the materials of the first barrier layer 1-1, the first barrier layer 1-2, the potential well layer 2, the second barrier layer 3-1, and the second barrier layer 3-2 are all metal oxides, the conduction band energy level of the potential well layer 2 is lower than the conduction band energy levels of the first barrier layer 1-1 and the first barrier layer 1-2, and is also lower than the conduction band energy levels of the second barrier layer 3-1 and the second barrier layer 3-2, and the material of the functional layer 4 is selected from praseodymium or tantalum oxide, this disclosure does not impose too many restrictions on the combination of materials of the first barrier layer 1-1, the first barrier layer 1-2, the potential well layer 2, the functional layer 4, the second barrier layer 3-1, and the second barrier layer 3-2.

[0092] In some embodiments, a first barrier sublayer 1-1, a first barrier sublayer 1-2, a potential well layer 2, a functional layer 4, a second barrier sublayer 3-1, and a second barrier sublayer 3-2 are formed by atomic layer deposition (ALD). The thicknesses of the first barrier sublayer 1-1, the first barrier sublayer 1-2, the potential well layer 2, the functional layer 4, the second barrier sublayer 3-1, and the second barrier sublayer 3-2 are all between 0.1 nm and 20 nm.

[0093] In the above embodiments, the first barrier layer 1 includes two first barrier sublayers, and any two adjacent first barrier sublayers are made of different materials; and the second barrier layer 3 includes two first barrier sublayers, and any two adjacent second barrier sublayers are made of different materials. However, this disclosure is not limited thereto. In some embodiments, only the first barrier layer 1 includes at least two first barrier sublayers, the second barrier layer 3 is a single-layer structure, and any two adjacent first barrier sublayers are made of different materials. In other embodiments, only the second barrier layer 3 includes at least two first barrier sublayers, the first barrier layer 1 is a single-layer structure, and any two adjacent second barrier sublayers are made of different materials.

[0094] The materials for the first barrier layer and / or the second barrier sublayer are selected from Ga2O3 or Al2O3, and the material for the potential well layer 2 is selected from In2O3 or SnO2.

[0095] Figure 4A is a schematic diagram of a metal oxide film layer according to some other embodiments of the present disclosure. Referring to Figure 4A, in some embodiments, the metal oxide film layer includes: a first barrier sublayer 1-1; a first barrier sublayer 1-2 located on one side of the first barrier sublayer 1-1; a potential well sublayer 2-1 located on the side of the first barrier sublayer 1-2 away from the first barrier sublayer 1-1; a potential well sublayer 2-2 located on the side of the potential well sublayer 2-1 away from the first barrier sublayer 1-2; a potential well sublayer 2-3 located on the side of the potential well sublayer 2-2 away from the potential well sublayer 2-1; a second barrier sublayer 3-1 located on the side of the potential well sublayer 2-3 away from the potential well sublayer 2-2; and a second barrier sublayer 3-2 located on the side of the second barrier sublayer 1-1. The first barrier layer 1-1, the first barrier layer 1-2, the potential well layer 2, the second barrier layer 3-1 and the second barrier layer 3-2 are all made of metal oxides. The conduction band energy levels of the potential well layer 2-1, the potential well layer 2-2 and the potential well layer 2-3 are lower than the conduction band energy levels of the first barrier layer 1-1 and the first barrier layer 1-2, and are also lower than the conduction band energy levels of the second barrier layer 3-1 and the second barrier layer 3-2. The material of the functional layer 4 is selected from praseodymium or tantalum oxide.

[0096] In some embodiments, the materials of the first barrier sublayer 1-1, the first barrier sublayer 1-2, the second barrier sublayer 3-1, and the second barrier sublayer 3-2 are selected from Ga2O3 or Al2O3, the materials of the potential well sublayer 2-1, the potential well sublayer 2-2, and the potential well sublayer 2-3 are selected from In2O3 or SnO2, and the molecular formula of the functional layer material is PrO2. x Or TaO x , where 2≤x≤3. The materials of the first barrier sublayer 1-1 and the first barrier sublayer 1-2 are different from each other. The materials of the second barrier sublayer 3-1 and the second barrier sublayer 3-2 are different from each other.

[0097] In one example, the materials of the first barrier sublayer 1-1, the first barrier sublayer 1-2, the potential well sublayer 2-1, the potential well sublayer 2-2, the potential well sublayer 2-3, the second barrier sublayer 3-1, the second barrier sublayer 3-2, and the functional layer 4 are Al2O3, Ga2O3, SnO2, In2O3, SnO2, Ga2O3, Al2O3, and PrO2, respectively. x Where 2≤x≤3. In another example, the materials of the first barrier sublayer 1-1, the first barrier sublayer 1-2, the potential well sublayer 2-1, the potential well sublayer 2-2, the potential well sublayer 2-3, the second barrier sublayer 3-1, the second barrier sublayer 3-2, and the functional layer 4 are Al2O3, Ga2O3, SnO2, In2O3, SnO2, Ga2O3, Al2O3, and TaO, respectively.x , where 2≤x≤3.

[0098] In one example, the materials of the first barrier sublayer 1-1, the first barrier sublayer 1-2, the potential well sublayer 2-1, the potential well sublayer 2-2, the potential well sublayer 2-3, the second barrier sublayer 3-1, the second barrier sublayer 3-2, and the functional layer 4 are Al2O3, Ga2O3, In2O3, SnO2, In2O3, Ga2O3, Al2O3, and PrO2, respectively. x Where 2 ≤ x ≤ 3. In another example, the materials of the first barrier sublayer 1-1, the first barrier sublayer 1-2, the potential well sublayer 2-1, the potential well sublayer 2-2, the potential well sublayer 2-3, the second barrier sublayer 3-1, the second barrier sublayer 3-2, and the functional layer 4 are Al2O3, Ga2O3, In2O3, SnO2, In2O3, Ga2O3, Al2O3, and TaO, respectively. x , where 2≤x≤3.

[0099] Of course, the materials of the first barrier sublayer 1-1, the first barrier sublayer 1-2, the potential well sublayer 2-1, the potential well sublayer 2-2, the potential well sublayer 2-3, the second barrier sublayer 3-1, the second barrier sublayer 3-2, and the functional layer 4 can also have other different combinations. Provided that the materials of the first barrier sublayer 1-1, the first barrier sublayer 1-2, the potential well layer 2, the second barrier sublayer 3-1, and the second barrier sublayer 3-2 are all metal oxides, the conduction band energy levels of the potential well sublayer 2-1, the potential well sublayer 2-2, and the potential well sublayer 2-3 are lower than the conduction band energy levels of the first barrier sublayer 1-1 and the first barrier sublayer 1-2, and also lower than the conduction band energy levels of the second barrier sublayer 3-1 and the second barrier sublayer 3-2, and the material of the functional layer 4 is selected from praseodymium or tantalum oxides, this disclosure does not impose excessive restrictions on the combination of materials of the first barrier sublayer 1-1, the first barrier sublayer 1-2, the potential well sublayer 2-1, the potential well sublayer 2-2, the potential well sublayer 2-3, the second barrier sublayer 3-1, the second barrier sublayer 3-2, and the functional layer 4.

[0100] In some embodiments, a first barrier sublayer 1-1, a first barrier sublayer 1-2, a potential well sublayer 2-1, a potential well sublayer 2-2, a potential well sublayer 2-3, a second barrier sublayer 3-1, a second barrier sublayer 3-2, and a functional layer 4 are formed by atomic layer deposition (ALD). The thicknesses of the first barrier sublayer 1-1, the first barrier sublayer 1-2, the potential well sublayer 2-1, the potential well sublayer 2-2, the potential well sublayer 2-3, the second barrier sublayer 3-1, the second barrier sublayer 3-2, and the functional layer 4 are all between 0.1 nm and 20 nm.

[0101] Figure 4B is a schematic diagram of a metal oxide film layer according to some other embodiments of the present disclosure. Referring to Figure 3B, in some embodiments, the metal oxide film layer includes: a first barrier sublayer 1-1; a first barrier sublayer 1-2 located on one side of the first barrier sublayer 1-1; a potential well sublayer 2-1 located on the side of the first barrier sublayer 1-2 away from the first barrier sublayer 1-1; a potential well sublayer 2-2 located on the side of the potential well sublayer 2-1 away from the first barrier sublayer 1-2; a potential well sublayer 2-3 located on the side of the potential well sublayer 2-2 away from the potential well sublayer 2-1; a functional layer 4 located on the side of the potential well layer 2-3 away from the potential well sublayer 2-2; and a second barrier sublayer 3-1 located on the side of the functional layer 4. The first barrier layer 1-1, the first barrier layer 1-2, the potential well layer 2, the second barrier layer 3-1 and the second barrier layer 3-2 are all made of metal oxides. The conduction band energy levels of the potential well layer 2-1, the potential well layer 2-2 and the potential well layer 2-3 are lower than the conduction band energy levels of the first barrier layer 1-1 and the first barrier layer 1-2, and are also lower than the conduction band energy levels of the second barrier layer 3-1 and the second barrier layer 3-2. The material of the functional layer 4 is selected from praseodymium or tantalum oxide.

[0102] In some embodiments, the materials of the first barrier sublayer 1-1, the first barrier sublayer 1-2, the second barrier sublayer 3-1, and the second barrier sublayer 3-2 are selected from Ga2O3 or Al2O3, the materials of the potential well sublayer 2-1, the potential well sublayer 2-2, and the potential well sublayer 2-3 are selected from In2O3 or SnO2, and the molecular formula of the functional layer material is PrO2. x Or TaO x , where 2≤x≤3. The materials of the first barrier sublayer 1-1 and the first barrier sublayer 1-2 are different from each other. The materials of the second barrier sublayer 3-1 and the second barrier sublayer 3-2 are different from each other.

[0103] In one example, the materials of the first barrier sublayer 1-1, the first barrier sublayer 1-2, the potential well sublayer 2-1, the potential well sublayer 2-2, the potential well sublayer 2-3, the functional layer 4, the second barrier sublayer 3-1, and the second barrier sublayer 3-2 are Al2O3, Ga2O3, SnO2, In2O3, SnO2, and PrO2, respectively. x The materials are Ga2O3 and Al2O3, where 2 ≤ x ≤ 3. In another example, the materials of the first barrier sublayer 1-1, the first barrier sublayer 1-2, the potential well sublayer 2-1, the potential well sublayer 2-2, the potential well sublayer 2-3, the functional layer 4, the second barrier sublayer 3-1, and the second barrier sublayer 3-2 are Al2O3, Ga2O3, SnO2, In2O3, SnO2, and TaO, respectively. xThe elements are Ga2O3 and Al2O3, where 2≤x≤3.

[0104] In one example, the materials of the first barrier sublayer 1-1, the first barrier sublayer 1-2, the potential well sublayer 2-1, the potential well sublayer 2-2, the potential well sublayer 2-3, the functional layer 4, the second barrier sublayer 3-1, and the second barrier sublayer 3-2 are Al2O3, Ga2O3, In2O3, SnO2, In2O3, and PrO2, respectively. x The materials are Ga2O3 and Al2O3, where 2 ≤ x ≤ 3. In another example, the materials of the first barrier sublayer 1-1, the first barrier sublayer 1-2, the potential well sublayer 2-1, the potential well sublayer 2-2, the potential well sublayer 2-3, the functional layer 4, the second barrier sublayer 3-1, and the second barrier sublayer 3-2 are Al2O3, Ga2O3, In2O3, SnO2, In2O3, and TaO2, respectively. x The elements are Ga2O3 and Al2O3, where 2≤x≤3.

[0105] Of course, the materials of the first barrier sublayer 1-1, the first barrier sublayer 1-2, the potential well sublayer 2-1, the potential well sublayer 2-2, the potential well sublayer 2-3, the functional layer 4, the second barrier sublayer 3-1, and the second barrier sublayer 3-2 can also have other different combinations. As long as the materials of the first barrier sublayer 1-1, the first barrier sublayer 1-2, the potential well layer 2, the second barrier sublayer 3-1, and the second barrier sublayer 3-2 are all metal oxides, the conduction band energy levels of the potential well sublayer 2-1, the potential well sublayer 2-2, and the potential well sublayer 2-3 are lower than the conduction band energy levels of the first barrier sublayer 1-1 and the first barrier sublayer 1-2, and are also lower than the conduction band energy levels of the second barrier sublayer 3-1 and the second barrier sublayer 3-2, and the material of the functional layer 4 is selected from praseodymium or tantalum oxide, this disclosure does not impose excessive restrictions on the combination of materials of the first barrier sublayer 1-1, the first barrier sublayer 1-2, the potential well sublayer 2-1, the potential well sublayer 2-2, the potential well sublayer 2-3, the functional layer 4, the second barrier sublayer 3-1, and the second barrier sublayer 3-2.

[0106] In some embodiments, a first barrier sublayer 1-1, a first barrier sublayer 1-2, a potential well sublayer 2-1, a potential well sublayer 2-2, a potential well sublayer 2-3, a functional layer 4, a second barrier sublayer 3-1, and a second barrier sublayer 3-2 are formed by atomic layer deposition (ALD). The thicknesses of the first barrier sublayer 1-1, the first barrier sublayer 1-2, the potential well sublayer 2-1, the potential well sublayer 2-2, the potential well sublayer 2-3, the functional layer 4, the second barrier sublayer 3-1, and the second barrier sublayer 3-2 are all between 0.1 nm and 20 nm.

[0107] In the above embodiments, the first barrier layer 1 includes two first barrier sublayers, and any two adjacent first barrier sublayers are made of different materials; and the second barrier layer 3 includes two first barrier sublayers, and any two adjacent second barrier sublayers are made of different materials. However, this disclosure is not limited thereto. In some embodiments, only the first barrier layer 1 includes at least two first barrier sublayers, the second barrier layer 3 is a single-layer structure, and any two adjacent first barrier sublayers are made of different materials. In other embodiments, only the second barrier layer 3 includes at least two first barrier sublayers, the first barrier layer 1 is a single-layer structure, and any two adjacent second barrier sublayers are made of different materials.

[0108] In the above embodiments, the potential well layer 2 includes at least two potential well sublayers, and any two adjacent potential well sublayers are made of different materials. The materials of the first barrier layer and / or the second barrier sublayer are selected from Ga2O3 or Al2O3, and the materials of the potential well sublayers are selected from In2O3 or SnO2.

[0109] Figure 5 is a schematic diagram of a metal oxide film layer according to some other embodiments of the present disclosure. Referring to Figure 5, in some embodiments, the metal oxide film layer includes: a first barrier layer 1; a potential well layer 2 located on one side of the first barrier layer 1; and a second barrier layer 3 located on the side of the potential well layer 2 away from the first barrier layer 1, wherein the materials of the first barrier layer 1, the potential well layer 2, and the second barrier layer 3 are all metal oxides, the conduction band energy level of the potential well layer 2 is lower than the conduction band energy level of the first barrier layer 1, and is lower than the conduction band energy level of the second barrier layer 3, and the material of the potential well layer 2 includes praseodymium or tantalum.

[0110] In some embodiments, the materials of the first barrier layer 1 and / or the second barrier layer 3 are selected from Ga2O3 or Al2O3, and the molecular formula of the material of the potential well layer 2 is InPrO. x Or InTaO x , where 1≤x≤3.

[0111] In one example, the materials of the first barrier layer 1, the potential well layer 2, and the second barrier layer 3 are Ga2O3 and InPrO, respectively. x The materials of the first barrier layer 1, the potential well layer 2, and the second barrier layer 3 are Ga2O3, InTaO3, and Ga2O3, where 1 ≤ x ≤ 3. In another example, the materials of the first barrier layer 1, the potential well layer 2, and the second barrier layer 3 are Ga2O3, InTaO3, and Ga2O3, respectively. x And Ga2O3, where 1≤x≤3.

[0112] In one example, the materials of the first barrier layer 1, the potential well layer 2, and the second barrier layer 3 are Al2O3, InPrO3, and InPrO3, respectively. x And Al2O3, where 1≤x≤3. In another example, the materials of the first barrier layer 1, the potential well layer 2, and the second barrier layer 3 are Al2O3, InTaO, and Al2O3, respectively.x , and Al2O3, where 1≤x≤3.

[0113] Of course, the materials of the first barrier layer 1, the well layer 2, and the second barrier layer 3 can also have other different combinations. As long as the materials of the first barrier layer 1, the well layer 2, and the second barrier layer 3 are all metal oxides, the conduction band energy level of the well layer 2 is lower than the conduction band energy level of the first barrier layer 1 and lower than the conduction band energy level of the second barrier layer 3, and the material of the well layer 2 includes praseodymium or tantalum, this disclosure does not impose too many limitations on the combination of the materials of the first barrier layer 1, the well layer 2, and the second barrier layer 3.

[0114] In some embodiments, a first barrier layer 1, a potential well layer 2, and a second barrier layer 3 are formed by atomic layer deposition (ALD). The thicknesses of the first barrier layer 1, the potential well layer 2, and the second barrier layer 3 are all between 0.1 nm and 20 nm.

[0115] In the metal oxide films according to this disclosure, since the material of the functional layer is selected from praseodymium or tantalum oxides or the material of the potential well layer includes praseodymium or tantalum, the PrO in the metal oxide film is increased. x Or TaO x The presence of this is equivalent to the doping of a wide-bandgap PrO3 layer into a metal oxide film. x Or TaO x This results in a wider band gap and lower absorption rate in the metal oxide film, thus significantly improving the NBTIS properties of the metal oxide film.

[0116] On the other hand, this disclosure provides a thin-film transistor including an active layer, wherein the active layer is made of a metal oxide film layer as described herein. Specifically, after forming an entire metal oxide film layer by atomic layer deposition, the active layer of the thin-film transistor is patterned by etching.

[0117] In the thin-film transistor according to this disclosure, since the material of the functional layer is selected from praseodymium or tantalum oxide or the material of the potential well layer includes praseodymium or tantalum, the PrO in the active layer is reduced. x Or TaO x The presence of this is equivalent to the active layer being doped with a wide-bandgap PrO. x Or TaO xThis results in a wider bandgap and lower absorption rate in thin-film transistors, thus enabling them to exhibit better stability under illumination. For illustrative and descriptive purposes, the above description of embodiments of the invention has been given. It is not exhaustive, nor is it intended to limit the invention to the precise forms or exemplary embodiments disclosed. Therefore, the foregoing description should be considered illustrative rather than restrictive. Clearly, many modifications and variations will be apparent to those skilled in the art. The embodiments were chosen and described to explain the principles of the invention and its best mode of practical application, thereby enabling those skilled in the art to understand the various embodiments of the invention and the various modifications suitable for the particular use or implementation considered. The scope of the invention is intended to be defined by the appended claims and their equivalents, wherein, unless otherwise stated, all terms are to be interpreted in their broadest reasonable sense. Therefore, the terms "the invention," "the present invention," etc., do not necessarily limit the scope of the claims to the particular embodiments, and references to exemplary embodiments of the invention do not imply limitation of the invention, nor should such limitation be inferred. The invention is defined only by the spirit and scope of the appended claims. Furthermore, these claims may involve the use of "first," "second," etc., followed by nouns or elements. These terms should be understood as nomenclature and should not be construed as limiting the number of elements modified by these nomenclatures unless a specific number is given. Any advantages and benefits described may not apply to all embodiments of the invention. It should be understood that changes to the described embodiments can be made by those skilled in the art without departing from the scope of the invention as defined by the appended claims. Furthermore, the elements and components in this disclosure are not intended for public distribution, whether or not they are expressly recited in the appended claims.

Claims

1. A metal oxide film layer, comprising: a first barrier layer; a well layer on one side of the first barrier layer; a second barrier layer on a side of the well layer distal to the first barrier layer; and a functional layer on a side of the well layer distal to the first barrier layer, wherein the first barrier layer, the well layer, and the second barrier layer are each of a metal oxide material, the well layer has a conduction band energy level less than that of the first barrier layer and less than that of the second barrier layer, and the functional layer is of a material selected from an oxide of praseodymium or tantalum. the first barrier layer and / or the second barrier layer is of a material selected from Ga2O3 or Al2O3, and the well layer is of a material selected from In2O3 or SnO2.

2. The metal oxide film layer of claim 1, wherein, the functional layer is on a side of the second barrier layer distal to the well layer.

3. The metal oxide film layer of claim 1, wherein, the functional layer is between the second barrier layer and the well layer.

4. The metal oxide film layer of claim 1, wherein, the first barrier layer, the well layer, the second barrier layer, and the functional layer each have a thickness in a range of 0.1 nm to 20 nm.

5. The metal oxide film layer according to any one of claims 1 to 4, wherein the well layer includes at least two well sub-layers, any two adjacent well sub-layers being of different materials.

6. The metal oxide film layer of claim 1, wherein, the first barrier layer and / or the second barrier layer is of a material selected from Ga2O3 or Al2O3, and the well sub-layers are of a material selected from In2O3 or SnO2.

7. The metal oxide film layer of claim 6, wherein, the first barrier layer, the second barrier layer, the well sub-layers, and the functional layer each have a thickness in a range of 0.1 nm to 20 nm.

8. The metal oxide film layer of claim 6, wherein, the first barrier layer includes at least two first barrier sub-layers, any two adjacent first barrier sub-layers being of different materials; and / or 9. The metal oxide film layer of claim 1, wherein, the second barrier layer includes at least two second barrier sub-layers, any two adjacent second barrier sub-layers being of different materials. the first barrier sub-layers and / or the second barrier sub-layers are of a material selected from Ga2O3 or Al2O3, and the well layer is of a material selected from In2O3 or SnO2.

10. The metal oxide film layer of claim 9, wherein, the first barrier sub-layers, the second barrier sub-layers, the well layer, and the functional layer each have a thickness in a range of 0.1 nm to 20 nm.

11. The metal oxide film layer of claim 9, wherein, the well layer includes at least two well sub-layers, any two adjacent well sub-layers being of different materials; 12. The metal oxide film layer of claim 10, wherein, the first barrier layer includes at least two first barrier sub-layers, any two adjacent first barrier sub-layers being of different materials; and the second barrier layer includes at least two second barrier sub-layers, any two adjacent second barrier sub-layers being of different materials. the first barrier sub-layers and / or the second barrier sub-layers are of a material selected from Ga2O3 or Al2O3, and the well sub-layers are of a material selected from In2O3 or SnO2.

13. The metal oxide film layer of claim 12, wherein, the first barrier sub-layers, the second barrier sub-layers, the well sub-layers, and the functional layer each have a thickness in a range of 0.1 nm to 20 nm.

14. The metal oxide film layer of claim 12, wherein, 16. A metal oxide film layer, comprising:

15. The metal oxide film layer of claim 1, the material of the functional layer having a molecular formula of PrO x or TaO x where 2 < x < 3. a first barrier layer; a well layer on one side of the first barrier layer; a second barrier layer on a side of the well layer distal to the first barrier layer, ​ ​ The material of the first barrier layer, the material of the well layer, and the material of the second barrier layer are metal oxides; the conduction band energy level of the well layer is less than the conduction band energy level of the first barrier layer and less than the conduction band energy level of the second barrier layer; and The material of the well layer comprises praseodymium or tantalum elements.

17. The metal oxide film layer of claim 16, wherein, The material of the first barrier layer and / or the second barrier layer is selected from Ga2O3or Al2O3, the material of the potential well layer has a molecular formula of InPrO x or InTaO x wherein 1≤x≤3.

18. The metal oxide film layer of claim 16, wherein, The thickness of the first barrier sub-layer, the second barrier sub-layer, and the well sub-layer ranges from 0.1 nm to 20 nm.

19. The metal oxide film layer of any one of claims 1 to 18, wherein, The metal oxide film layer is made by an atomic layer deposition method.

20. A thin film transistor comprising an active layer, wherein, The active layer is made of the metal oxide film layer according to any one of claims 1 to 19.

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