Power semiconductor module and method for manufacturing a power semiconductor module

Abstract

A power semiconductor module (100) is provided, comprising a substrate (10), having a first main surface (11) and a second main surface (12) opposite the first main surface (11) along a stacking direction (S1). The power semiconductor module (100) further comprises a first circuit metallization (20) with a first portion (21) and a second portion (22), arranged on the first main surface (11). The power semiconductor module (100) further comprises a metal coating (30) arranged in the first portion (21) of the first circuit metallization (20), wherein the second portion (22) of the first circuit metallization (20) is free of the metal coating (30), and a resin body (40) covering the substrate (10) and the second portion (22) of the first circuit metallization (20). The resin body (40) has a top surface (41) extending along a first extension area (A1), and an inner surface (42 ) facing the first circuit metallization (20). The resin body (40) comprises at least one opening (45) extending into the resin body (40) from the top surface (41) to the inner surface (42) along the stacking direction (S1) and terminates at the metal coating (30), such that the metal coating (30) is exposed.

Description

[0001] P2024,0595 WO N / P230292WO01 July8,2025 -1 - Description POWER SEMICONDUCTOR MODULE AND METHOD FOR MANUFRAICNTGUA POWER SEMICONDUCTOR MODULEThe present disclosure relates to a power semicondu ctormodule. The present disclosure relates further to a methodfor manufacturing the power semiconductor module .In the manufacturing of molded power packages there aredifferent ways to realize a molded power package wi thvertically arranged terminals, like auxiliary termi nals.US 2020 / 144140 A1 discloses a power semiconductor m odule,including a substrate having an electric insulating mainlayer being provided with a structured top metalliz ation andwith a bottom metallization, wherein the top metall ization isprovided with at least one power semiconductor devi ce and atleast one contact area, wherein the main layer toge ther withitstop metallization and the atleastone powersemiconductor device is embedded in a mold compound such thatthe mold compound includes at least one opening forcontacting the atleastone contactarea.US 2020 / 066609 A1 discloses a power semiconductor m odule,including a substrate with a metallization layer; a t leastone power semiconductor chip bonded to the substrat e; and amold encapsulation partially encapsulating the semi conductorchip and the substrate; the mold encapsulation incl udes atleastone window exposing a terminalarea ofthe metallization layer. P2024,0595 WO N / P230292WO01 July8,2025 -2 -US 2021 / 265175 A1 discloses a method including coup ling asemiconductor chip and an electrode with a substrat e. Bottomand top mold die can be use, where the top mold die define afirst space and a second space that is separated fr om thefirst space. The method can include injecting encap sulationmaterial to form an encapsulation member coupled to andcovering atleasta portion ofthe substrate.US 2021 / 378098 A1 discloses an electronic device in cluding anintegrated device package and a component. The inte grateddevice package includes a substrate and a package b ody overthe substrate, and a hole formed through the packag e body toexpose a conductive pad of the substrate. The compo nent ismounted over the package body and includes a compon ent bodyand a lead extending from the component body throug h thehole. US 2023 / 343661 A1 disclosesa semiconductormodule including a powerelectronicscarrierincluding a structuredmetallization layer disposed on an electrically ins ulatingsubstrate, a power semiconductor die mounted on the powerelectronics carrier, a housing that surrounds an in teriorvolume over the power electronics carrier, a reinfo rcingstructure contained within the interiorvolume and includinga textured surface that is accessible by fluid, a v olume ofcurable encapsulant disposed within the interior vo lume andencapsulating the powersemiconductordie.It is an object to provide a power semiconductor mo dule,which has an improved structure while maintaining a nefficient manufacturing process with a sufficient p rocessstability. P2024,0595 WO N / P230292WO01 July8,2025 -3 -This object is solved by the features of the indepe ndentclaims. Advantageous embodiments are indicated in t hedependentclaims.Embodiments of the disclosure, for instance as clai med in theindependentclaims,addressthe above shortcomings in the artin whole or in part. Further embodiments of the pow ersemiconductor module and of the method for manufact uring thepower semiconductor module are subject matter of th e furtherclaims.There is provided a power semiconductor module. The powersemiconductormodule comprisesa substrate,having a first main surface and a second main surface.The second main surface isopposite the firstmain surface along a stackingdirection. Exemplarily, the substrate comprises chi ps. Forexample, the chips are arranged on the first main s urface.The substrate is for example isolating. The substra te is forexample realized bya ceramicbased substrate made ofanelectrically isolating ceramic sheet with a first t opmetallization on the first main surface and a secon d bottommetallization on the second main surface.The substrate is for example realized by an insulat ed metalsubstrate comprising a thick metal plate, an electr icallyisolating resin layer, and a circuit metallization.The powersemiconductormodule furthercomprisesa firstcircuit metallization with a first portion and a se condportion. The first circuit metallization is arrange d on thefirst main surface of the substrate. Exemplarily, t he firstcircuit metallization comprises copper, aluminum, o r acorresponding alloy.A pluralityoffirstcircuit P2024,0595 WO N / P230292WO01 July8,2025 -4 -metallizations can be arranged on the first main su rface. Theplurality of first circuit metallizations is arrang ed next toeach otheralong a firstextension area.The first circuitmetallizations are for example separated by isolati nggrooves.A metal coating is arranged in the first portion of the firstcircuit metallization. The second portion of the fi rstcircuit metallization is free from the metal coatin g.Exemplarily, the metal coating of the substrate sur face willprevent oxidation and / or corrosion of exposed porti ons of thefirst circuit metallization. Arranging the metal co ating tocertain portions improves joining processes, e.g. b y animproved adhesion of the joining material or facili tates thejoining process at all. The metal coating is a part of thesubstrate. The powersemiconductormodule furthercomprisesa resinbody. The resin body is for example a mold compound .Exemplarily, the resin body is a thermosetting resi n or athermoplastic resin. The resin body comprises for e xample afiller material of particles, fibers or mesh. Exemp larily,the resin body is manufactured by transfer molding, injectionmolding,oranyothersuitable molding method.The resin body covers the substrate and the first c ircuitmetallization partially. The resin body particularl y coversthe second portion of the first circuit metallizati oncompletely.The firstportion ofthe firstcircuit metallization isfree from the resin body.The resin body has a top surface extending along th e firstextension area. The resin body has an inner surface extending P2024,0595 WO N / P230292WO01 July8,2025 -5 -along the first extension area and facing the first circuitmetallization. The resin body comprises at least on e openingextending into the resin bodyfrom the top surface to the innersurface along the stacking direction.The at leastone opening terminatesatthe firstportion,such that the metal coating isexposed.The metalcoating ismainlyor entirelyexposed. The metal coating is at least partially ex posed.The openings in the resin body are needed for the m oldingprocessand / orformounting ofverticallyarranged terminals.This results in exposed portions of the substrate s urface. Toprevent local oxidation and / or corrosion of the fir st circuitmetallization, the metal coating is applied. Additi onally,the metal coating improves the joining of terminals to thefirst circuit metallization depending on the chosen joiningtechnology. In some cases, during the molding proce ss, thepins of the molding tool inside the openings are al so neededto press the substrate towards the bottom of a mold ing tool.Thus, a further process for closing and sealing the openingswith a subsequent filling of the openings, for exam ple byresin material,can be avoided.Consequently,this saves effortand costs.The metal coating can be applied only on those port ions,which are not covered by the resin body. For exampl e, themetal coating is not applied on those portions, whe re theresin bodyadheresto the substrate.Thus, the coating of the complete first circuit met allizationcan be avoided. Omitting the local metal coating in certainportions, results in an increased adhesion strength betweenthe substrate surface, i.e., the circuit metallizat ion, and P2024,0595 WO N / P230292WO01 July8,2025 -6 -the resin body. For example, a metal coating compri singsilver, reduces the adhesion strength compared to a barecircuit metallization, which comprises bare copper. Anincreased adhesion strength results in less mechani caldamage, decreased humidity penetration, and finally in anincreased reliability of the power semiconductor mo dulecompared with a coating of the complete first circu itmetallization. According to a furtherembodimentthe atleastone openinghas along the first extension area a cross section, which iscircular-shaped orrectangular-shaped.Alternatively, the at least one opening has an elli pticallyshaped or triangular-shaped cross-section. The at l east oneopening isnotlimited to these crosssectionsand can have across section of any polygonal shape. The cross sec tions ofmultiple openings can be the same or have different shapes.According to a furtherembodimentthe atleastone openinghas a cross section with a first width extending al ong thefirst extension area. The first width is the longes t distanceinside the cross section. For example, the first wi dth is thediameterofa circle.Forexample,the firstwidth ofa square-shaped orrectangular-shaped opening isthe diagonalconnecting two opposite corners. For example, the f irst widthof an elliptically shaped cross section is the majo r axis ofthe ellipsis.Forpolygonalshaped crosssections, the firstwidth is the longest distance crossing the inside o f thecrosssection between two corners.The value of the first width of the opening is unif orm alongthe stacking direction. Correspondingly, the area o f the P2024,0595 WO N / P230292WO01 July8,2025 -7 -cross section of the at least one opening is unifor m alongthe stacking direction. The value of the first widt h is inthe range between 2 mm and 20 mm. The values of 2 m m and 20mm are included in thisrange.The limits of the first width depend on the need of a certainopening size. The size of the opening is given by t he typeand design of a used terminal. For example, for a p interminal a first width of 2 mm is sufficient. If th ere is apower terminal with a horizontal foot extending alo ng thefirst extension area, a first width of 10 mm or mor e isneeded. Depending on the number of terminals inside oneopening,the size ofthe width isvaried.A larger first width also simplifies closing the op ening inthe resin body after inserting for example a termin al intothe opening.Thisallowsan easyand more reliable processing relating to planting ofthe terminals.The size of the first width of the opening also inf luencesthe joining processes between terminal and metal co ating.Alternatively, the width is determined by the joini ng processto be applied. The more space is available in the o pening,the less complicated the joining process will be fo r exampledue to accessibility of the terminal foot. For exam ple,accessibility for welding tools. A square-shaped cr osssection of the opening is for example more suitable for usinga sonotrode to join terminals to the circuit metall ization byultrasonicwelding. According to a furtherembodimentthe atleastone openinghas a cross section with a second width extending a long thefirst extension area. The second width varies along the P2024,0595 WO N / P230292WO01 July8,2025 -8 -stacking direction. For example, the second width d ecreasesfrom the top surface to the inner surface along the stackingdirection. Correspondingly, the area of the cross s ection ofthe at least one opening decreases. For example, th esidewalls of the opening taper the second width alo ng thestacking direction.Forexample,the opening hasa truncatedcone shape, wherein the diameter at the top surface is largerthan the diameter at the inner surface. Alternative ly, theopening hasa truncated pyramid shape.The opening isnotlimited to the mentioned shapes and can have any su itableshape depending on the application. With a customiz able shapeof the opening a variety of joining processes can b e used.Terminals can be manufactured according to customerspecifications. Thus, more flexibility to choose th e shapeand dimensions of the planted terminals is possible .Alternatively, the shape of the openings can be adj ustedaccording to the selected terminaltype.According to a further embodiment the first circuitmetallization comprisesa third portion.The third portion isarranged between the first portion and the second p ortionalong the first extension area. The metal coating i s arrangedbetween the first circuit metallization and the res in body,such thatthe metalcoating and the resin bodyare overlapping along the stacking direction.The third portion extends from the edge of the firs t portionto the edge of the second portion. The third portio n isdefined asthe area along the firstextension area betweenthe first portion and the second portion. For examp le, for anopening with a circular shaped cross section, the t hirdportion is annular shaped with a first inner diamet er and asecond outer diameter extending along the first ext ension P2024,0595 WO N / P230292WO01 July8,2025 -9 -area. For example, the third portion has a second o uterdiameter,which islargerthan the second width at the top surface ofthe opening. According to a furtherembodimentthe value ofthe size ofthe third portion along the first extension area is in therange between 0.1 mm and 4 mm. The metal coated thi rd portionfurther improves oxidation and corrosion protection .Terminating the metal coating not at the second por tion,where the opening is directly adjacent to the borde r betweenthe resin body and the first circuit metallization, improvesthe oxidation and corrosion protection. The metal c oating ofthe third portion ensures that the bottom of the op ening,i.e., the first portion, is completely coated by th e metalcoating even in case ofmanufacturing tolerances.According to a further embodiment the metal coating comprisesa noble metal or an inert metal. For example, silve r, gold ornickel. The metal coating is not limited by the men tionedmaterialsand can comprise anysuitable material.According to a further embodiment the metal coating comprisesa plurality of layers arranged along the stacking d irection.For example, the metal coating is a multilayer stac k withthree layers. For example, Nickel, Palladium and Go ldarranged from the top to the bottom along the stack ingdirection. This facilitates better soldering and we ttingproperties compared to Nickel-Gold layers. Furtherm ore, onelayer of the multilayer stack is used as a diffusio n barrier.For example a layer comprising Palladium is used as diffusionbarrier. P2024,0595 WO N / P230292WO01 July8,2025 -10 - According to a furtherembodimentthe thicknessof the metal coating isin the range between 0.1µm and 20µm. According to a furtherembodimentthe atleastone opening inthe resin body is configured to receive at least on e firstterminal. Alternatively, or additionally the at lea st oneopening is configured to receive at least one secon dterminal. The first and second terminal electricall y couplewith the metal coating. The at least one opening ha s a meansto secure planting of the at least one first and / or secondterminalatthe atleastone opening. According to a furtherembodimentthe atleastone firstterminal is connected inside the at least one openi ngdirectlyto the metalcoating.The opening can be left open after contacting the c ircuitmetallization with a pressure contact. According to a furtherembodimentthe atleastone secondterminal is connected inside the at least one openi ng to areservoir of conductive glue or resin. The conducti ve glue isprovided inside the opening. For example, one first terminalis connected inside one of the at least one opening and onesecond terminalisconnected inside anotherone of the atleast one opening. In this case, there are at least twoopenings.The finished power semiconductor module comprises t he firstand / orsecond terminal.The first and second terminal may be solely a pin t erminal,ora pin terminal,which isinserted into a hollow sleeve P2024,0595 WO N / P230292WO01 July8,2025 -11 -being mounted on the substrate inside the opening t o be usedasa pin holder.The terminalsmayhave a vertical mounting portion,extending along the stacking direction.Alternatively, or additionally, the terminals may h ave ahorizontal mounting portion, extending in the first extensionarea, like a terminal foot. The first and second te rminal arefor example made of copper or copper alloy. Further more, amajorpartofthe opening ofthe resin bodycan be filledwith conductive glue, such that the second terminal isinserted into the glue reservoir. The second termin al is notin direct contact with the substrate or the first c ircuitmetallization or the metal coating. When the conduc tive glueis hardened the second terminal is electrically andmechanically connected to the substrate. The conduc tive glueis for example made of epoxy resin as base material , which isfilled with silver particles. Other metals can also be usedasfillermaterial. The filling ofthe opening isdone before mounting theterminal. For example, if the terminal is formed by a springor has a pin shape and the tip penetrates the not y ethardened conductive gel, glue or resin. This can be donedepending on the manufacturing method. Alternativel y, theopening can be filled with conductive gel,glue or resin, afterarranging ofthe terminal.The metal coating improves the joining connection b etween avertically arranged terminal and the substrate surf acedepending on the joining technology. The metal coat ing has abetter compatibility with the filled conductive glu e forauxiliarysignalconnection. P2024,0595 WO N / P230292WO01 July8,2025 -12 -There is also provided a method for manufacturing t he powerpackage. According to an embodiment the method comp rises thestep ofproviding a substrate with a firstcircuitmetallization arranged on a first main surface of t hesubstrate.In a further step a metal coating is applied on a f irstportion of the first circuit metallization. Then, t hesubstrate and the first circuit metallization are c overedwith a resin body by a molding tool during a moldin g process.The resin bodycomprisesatleastone opening.The openingsare shaped by pins or protrusions of the mold tool. The pinshave the negative shape of the openings. Concurrent withcovering the substrate and the first circuit metall ization apressure is applied on the substrate provided by th e pins ofthe mold tool.The pinsare pressing the substrate againstthe bottom of the molding tool. This prevents the s ubstratebackside from contamination with mold resin. In add ition, thepressing can provide the flattening of the substrat e. Thepins of the mold tool are in position before format ion of theresin bodyand are partofthe forming tool.According to a further embodiment, the method compr ises thestep ofinserting atleastone firstterminalinto the at leastone opening.The atleastone firstterminal isjoinedwith the metal coating by soldering, gluing, sinter ing orwelding. After joining of the first terminal, the o pening canalso be filled with non-conductive glue orresin.Alternatively, the opening is filled, but not cured with agel, glue or resin, and the terminal is joined with the metalcoating before curing. P2024,0595 WO N / P230292WO01 July8,2025 -13 -According to a further embodiment the method compri ses thestep of at least partially filling the at least one openingwith a conductive glue, such that a reservoir of co nductiveglue isprovided.The method furthercomprisesthe step of inserting atleastone second terminalpartlyinto thereservoir of conductive glue. Then, hardening the c onductiveglue, such that the at least one second terminal is connectedwith the reservoir of conductive glue. The terminal can be intouch with the circuit metallization and / or the met alcoating. Alternatively, the terminal is not in touc h with thecircuitmetallization and / orthe metalcoating.The present disclosure comprises several aspects of a powersemiconductor module and of a method for manufactur ing apower semiconductor module on the basis of their em bodimentsand examples.Everyfeature described with respect to one ofthe aspects is also disclosed herein with respect t o theother aspect, even if the respective feature is notexplicitly mentioned in the context of the specific aspect.For example, the method described in this disclosur e isdirected to a method for manufacturing a power semi conductormodule.Thus,featuresand advantagesdescribed in connectionwith the power semiconductor module can be used for themethod,and vice versa.While the disclosure is amenable to various modific ations andalternative forms, specifics thereof are shown by w ay ofexample in the figures and will be described in det ail. Itshould be understood, however, that the intention i s not tolimit the disclosure to the particular described em bodimentsand examples.On the contrary,the intention isto coverallmodifications, equivalents, and alternatives fallin g withinthe scope of the disclosure defined by the appended claims. P2024,0595 WO N / P230292WO01 July8,2025 -14 - The accompanying figuresare included to provide a furtherunderstanding. In the figures, elements of the same structureand / orfunctionalitymaybe referenced bythe same reference signs.Itisto be understood thatthe embodiments shown inthe figures are illustrative representations and ar e notnecessarilydrawn to scale. Figure 1 to 3 schematiccross-sectionalviewsofa power semiconductormodule according to embodiments,Figure 4 a top view of a power semiconductor modu leaccording to an embodiment,Figure 5 to 7 schematic cross-sectional views of a powersemiconductormodule according to further embodiments,Figure 8 a top view of a power semiconductor modu leaccording to a furtherembodiment,Figure 9 to 10schematic cross-sectional views of a powersemiconductormodule according to further embodiments.Figure 1 shows a schematic view of a power semicond uctormodule 100. The power semiconductor module 100 comp rises asubstrate 10. The substrate is for example isolatin g. Thesubstrate 10 has a first main surface 11 and a seco nd mainsurface 12.The second main surface 12 isopposite the first main surface 11 along a stacking direction S1.A first circuit metallization 20 is arranged on the firstmain surface 11. The first circuit metallization 20 has afirst portion 21 and a second portion 22. A metal c oating 30 P2024,0595 WO N / P230292WO01 July8,2025 -15 -is arranged in the first portion 21 of the first ci rcuitmetallization 20. The second portion 22 is free fro m themetalcoating 30.Exemplarily,the firstcircuit metallization 20 comprisescopper,aluminum,ora corresponding alloy.In Figure 1 two firstcircuit metallizations20 are shown,which are arranged on the firstmain surface 11 next to each other. Between the two firstcircuit metallizations 20 is a small isolating groo ve 25. Thefirst circuit metallizations 20 are arranged next t o eachother along the first extension area. The first cir cuitmetallizations 20 are separated by the isolating gr oove 25and are notin mechanicalcontactto each other.The power semiconductor module 100 further comprise s a resinbody40.The resin body40 coversthe substrate 10 and thefirst circuit metallization 20 partially. The resin body 40coversthe second portion 22 ofthe firstcircuitmetallization 20 completely. The first portion 21 o f thefirst circuit metallization 20 is free from the res in body40.The resin body 40 has a top surface 41. The top sur face 41extends along a first extension area A1. The stacki ngdirection S1 is for example perpendicular to the fi rstextension area A1. The resin body 40 further has an innersurface 42. The inner surface 42 faces the first ci rcuitmetallization 20. The resin body 40 further compris es atleast one opening 45. In Figure 1 two openings 45 a re shown.The resin body 40 is not limited to exactly two ope nings 45.Alternatively, the resin body 40 comprises one open ing 45 ormore than two openings 45. The opening 45 has a uni form firstwidth w1 along the first extension area A1. The val ue of thefirstwidth w1 isin the range between 2 mm and 20 mm. P2024,0595 WO N / P230292WO01 July8,2025 -16 - The opening 45 extendsinto the resin body40 from the top surface 41 to the innersurface 42.The opening 45 terminatesat the first portion 21 of the first circuit metall ization20. Thus, the metal coating 30 is not covered by th e resinbody40.The metalcoating 30 isexposed.Figure 2 shows a schematic view of a power semicond uctormodule 100 of a further embodiment. The power semic onductormodule 100 differs from the power semiconductor mod ule 100shown in figure 1 in that a second metallization 50 isarranged on the second main surface 12 of the subst rate 10.The second metallization 50 is for example a backsi demetallization ora heatsink.Figure 3 shows a schematic view of a power semicond uctormodule 100 of a further embodiment. The power semic onductormodule 100 differs from the power semiconductor mod ule 100shown in figure 1 in that the first circuit metalli zation 20comprisesa third portion 23.The third portion 23 isarranged between the first portion 21 and the secon d portion22 along the firstextension area A1.In the third portion23, the metal coating 30 is arranged between the fi rstcircuit metallization 20 and the resin body 40, suc h that themetal coating 30 and the resin body 40 are overlapp ing alongthe stacking direction S1. Figure 4 showsa schematictop view ofthe power semiconductormodule 100 from figure 3.The powersemiconductor module 100 comprises the resin body 4 0 with thetop surface 41. The top surface extends along the f irstextension area A1. In figure 4 four openings 45 are shown.The power semiconductor module 100 is not limited t o four P2024,0595 WO N / P230292WO01 July8,2025 -17 -openings 45. The power semiconductor module 100 can have lessthan four or more than four openings 45. The openin gs 45 havethe first width w1 along the first extension area A 1. Thepower semiconductor module 100 is not limited to th e samefirst width w1 for each opening 45. The first width w1 canvary for each opening 45 if necessary. Inside the o pening 45the portion of the metal coating 30 covering the fi rstportion 21 is visible. The third portion 23 is arra nged alongthe first extension area A1 adjacent to the first p ortion 21.The third portion 23 surrounds the first portion 21 along thefirst extension area A1. The second portion 22 is a rrangedalong the first extension area A1 adjacent to the t hirdportion 23. The second portion 22 surrounds the thi rd portion23. The metal coating 30 extends in the first porti on 21 andin the third portion 23 along the first extension a rea A1.Figure 5 shows a schematic view of a power semicond uctormodule 100 of a further embodiment. The power semic onductormodule 100 differs from the power semiconductor mod ule 100shown in figure 1 in that the opening 45 has a cros s sectionwith a second width w2 extending along the first ex tensionarea A1. The second width w2 varies along the stack ingdirection S1. The second width w2 decreases from th e topsurface 41 to the inner surface 42 along the stacki ngdirection S1. Correspondingly, the area of the cros s sectionof the opening 45 decreases. For example, the sidew alls ofthe opening 45 are tapered along the stacking direc tion S1.The opening 45 hasa truncated cone shape,wherein the secondwidth w2 at the top surface 41 is larger than the s econdwidth w2 at the inner surface 42. Alternatively, th e opening45 has a truncated pyramid shape. The opening 45 is notlimited to the mentioned shapes and can have any su itable P2024,0595 WO N / P230292WO01 July8,2025 -18 -shape depending on the application. With a customiz able shapeof the opening 45 a variety of joining processes ca n be used.Figure 6 shows a schematic view of a power semicond uctormodule 100 of a further embodiment. The power semic onductormodule 100 differs from the power semiconductor mod ule 100shown in figure 5 in thatthe second metallization 50 isarranged on the second main surface 12 of the subst rate 10.The second metallization 50 is for example a backsi demetallization.Figure 7 shows a schematic view of a power semicond uctormodule 100 of a further embodiment. The power semic onductormodule 100 differs from the power semiconductor mod ule 100shown in figure 6 in that the first circuit metalli zation 20comprises the third portion 23. The third portion 2 3 isarranged between the first portion 21 and the secon d portion22 along the firstextension area A1.In the third portion23, the metal coating 30 is arranged between the fi rstcircuit metallization 20 and the resin body 40, suc h that themetal coating 30 and the resin body 40 are overlapp ing alongthe stacking direction S1. In figure 7 the third po rtion 23isequalto the second width w2 atthe top surface 41 oftheopening 45 along the first extension area A1. Alter natively,the third portion 23 is larger along the first exte nsion areaA1 than the second width w2 at the top surface 41 o f theopening 45.Alternatively,the third portion 23 is smalleralong the first extension area A1 than the second w idth w2 atthe top surface 41 of the opening 45. Alternatively , nosecond metallization 50 isprovided forthe power semiconductormodule 100. P2024,0595 WO N / P230292WO01 July8,2025 -19 - Figure 8 showsa schematictop view ofthe power semiconductormodule 100 from figure 7.The powersemiconductor module 100 comprises the resin body 4 0 with thetop surface 41. The top surface 41 extends along th e firstextension area A1. In figure 8 four openings 45 are shown.The power semiconductor module 100 is not limited t o fouropenings 45. The power semiconductor module 100 can have lessthan four or more than four openings 45. The openin gs 45 havethe varying second width w2 along the first extensi on areaA1. The power semiconductor module 100 is not limit ed to thesame varying second width w2 foreach opening 45.Exemplarily, each opening 45 can have a different v aryingsecond width w2. For example, the second width w2 d iffers foreach opening 45 at the top surface 41. Alternativel y, oradditionally the second width w2 differs for each o pening 45at the inner surface 42. For example, the second wi dth w2 atthe top surface 41 isthe same foreach opening 45 anddiffers at the inner surface 42 for each opening 45 . Theopening 45 is not limited to the mentioned shapes a nd canhave any suitable shape depending on the applicatio n. With acustomizable shape of the opening 45 a variety of j oiningprocessescan be realized.Inside the opening 45 the portion of the metal coat ing 30covering the first portion 21 is visible. The third portion23 is arranged along the first extension area A1 ad jacent tothe first portion 21. The third portion 23 surround s thefirst portion 21 along the first extension area A1. Thesecond portion 22 is arranged along the first exten sion areaA1 adjacent to the third portion 23. The second por tion 22surrounds the third portion 23. The metal coating 3 0 extendsin the first portion 21 and in the third portion 23 along thefirstextension area A1.In figure 8 the extentof the third P2024,0595 WO N / P230292WO01 July8,2025 -20 - portion 23 along the firstextension area isequal to the second width w2 atthe top surface 41.Figure 9 shows a schematic view of a power semicond uctormodule 100 of a further embodiment. The power semic onductormodule 100 differs from the power semiconductor mod ule 100shown in figure 5 in that the power semiconductor m odule 100comprises a first terminal 60. The opening 45 in th e resinbody 40 is configured to receive at least one first terminal60. The first terminal 60 is electrically coupled w ith themetal coating 30 and consequently with the first ci rcuitmetallization. The first terminal 60 is connected i nside theopening 45 directly to the metal coating 30. The op ening 45hasa meansto secure the planting ofthe atleast one firstterminal 60 at the opening 45. The connection may b efacilitated by gluing, soldering, sintering, or wel ding. Theopening 45 can also be filled with gel, glue or res in, aftermounting ofthe firstterminal60.Figure 10 shows a schematic view of a power semicon ductormodule 100 of a further embodiment. The power semic onductormodule 100 differs from the power semiconductor mod ule 100shown in figure 9 in that the opening 45 is configu red toreceive at least one second terminal 65. The second terminal65 is electrically coupled with the metal coating 3 0. Theopening 45 has a means to secure planting of the se condterminal65 atthe opening 45.The second terminal 65 isconnected inside the opening 45 to a reservoir of c onductiveglue or resin 70. The conductive glue is provided i nside theopening 45. The second terminal 65 may be in mechan icalcontact with the metal coating 30. Alternatively, t he secondterminal 65 is not in mechanical contact with the m etalcoating 30. P2024,0595 WO N / P230292WO01 July8,2025 -21 -The first terminal 60 and the second terminal 65 ma y besolelya pin terminal,ora pin terminal,which is insertedinto a hollow sleeve being mounted on the substrate 10 to beused as a pin holder. Alternatively, or additionall y, theterminals 60, 65 may have a horizontal mounting por tion, likea terminal foot. The first terminal 60 and the seco ndterminal 65 are for example made of copper or coppe r alloy.Furthermore,a majorpartofthe opening 45 ofthe resin body40 can be filled with conductive glue, such that th e secondterminal 65 is inserted into the glue reservoir 70. Thesecond terminal 65 is not in direct contact with th esubstrate 10 orthe firstcircuitmetallization 20 orthemetal coating 30. When the conductive glue is harde ned thesecond terminal 65 is electrically and mechanically connectedto the substrate 10. The conductive glue is for exa mple madeof epoxy resin as base material, which is filled wi th silverparticles.Othermetalscan also be used asfiller material.Alternatively, the opening 45 is filled with gel, g lue orresin,afterarranging ofthe second terminal65.The metal coating 20 improves the joining connectio n betweena vertically arranged terminal 60, 65 and the subst rate 10depending on the joining technology. The metal coat ing 30 hasa better compatibility with the filled conductive g lue forauxiliary signal connection. In addition, the metal coating30 prevents the top surface of the circuit metalliz ation 20from oxidation and corrosion. The partialmetalcoating 30 supportsthe mounting oftheterminals 60, 65 in the openings 45. On one hand, t he metalcoating 30 improvesthe joining connection between avertically arranged terminal 60, 65 and the substra te 10 P2024,0595 WO N / P230292WO01 July8,2025 -22 -depending on the joining technology. On the other h and, amajor part of the opening 45 of the resin body 40 c an befilled with conductive glue, such that the second t erminal 65is inserted into the glue reservoir 70 and electric ally andmechanically connected, when the glue has been hard ened. Thesecond terminal 65 will not get in direct contact w ith thesubstrate 10. The conductive glue is for example ma de ofepoxyresin asbase material,which isfilled with silver particles.Othermetalscan also be used asfiller material.The partial silver coating 30 improves the materialcompatibility of such glue towards the substrate 10 .The opening 45 is not limited to receive one termin al 60, 65.The opening 45 can receive several terminals 60, 65 dependingon the necessityofthe application.The terminals 60,65 canbe manufactured according to customer specification s. Thepower semiconductor module 100 may incorporate suit ableterminals 60, 65 of different designs. Thus, more f lexibilityto choose the shape and dimensions of the planted t erminalsis possible. Furthermore, the opening 45 can be fil led withgel, glue or resin before or after arranging and mo unting ofthe terminals60,65. Furthermore,the powersemiconductormodule 100 in figure 10comprises a second metallization 50. The second met allization50 is for example a backside metallization. The sec ondmetallization 50 is optional and can be also omitte d.The embodiments shown in the Figures 1 to 10 as sta tedrepresent exemplary embodiments of the power semico nductormodule; therefore, they do not constitute a complet e list ofall embodiments according to the power semiconducto r module.Actual arrangements and methods may vary from the e mbodiments P2024,0595 WO N / P230292WO01 July8,2025 -23 -shown in terms of arrangements, devices and methods forexample.

[0002] P2024,0595 WO N / P230292WO01 July8,2025 -24 - Reference Signs 100 Powersemiconductormodule 10 substrate 11 firstmain surface 12 second main surface 20 firstcircuitmetallization 21 firstportion 22 second portion 23 third portion 25 isolating groove 30 metalcoating 40 resin body 41 top surface 42 innersurface 45 opening 50 second metallization 60 firstterminal 65 second terminal 70 reservoirofconductive glue S1 stacking direction A1 extension area w1 firstwidth w2 Second width

Claims

P2024,0595 WO N / P230292WO01 July8,2025 -25 - Claims 1.Powersemiconductormodule (100)comprising- a substrate (10), having a first main surface (11) and asecond main surface (12) opposite the first main su rface(11)along a stacking direction (S1),- a first circuit metallization (20) with a first por tion(21) and a second portion (22), arranged on the fir st mainsurface (11),- a metal coating (30) arranged in the first portion (21) ofthe first circuit metallization (20), wherein the s econdportion (22) of the first circuit metallization (20 ) isfree ofthe metalcoating (30),- a resin body (40) covering the substrate (10) and t hesecond portion (22) of the first circuit metallizat ion(20), wherein the resin body (40) has a top surface (41)extending along a first extension area (A1), and an innersurface (42) facing the first circuit metallization (20),and wherein- the resin body (40) comprises at least one opening (45)extending into the resin body (40) from the top sur face(41)to the innersurface (42)along the stacking direction (S1), terminating at the metal coating (3 0),such thatthe metalcoating (30)isexposed.

2. Power semiconductor module (100) according to cl aim 1,wherein the at least one opening (45) has along the firstextension area (A1) a cross section, which is circu lar-shapedorrectangular-shaped.

3. Power semiconductor module (100) according to cl aim 1 or2, wherein the at least one opening (45) has a cros s sectionwith a first width (w1) extending along the first e xtensionP2024,0595 WO N / P230292WO01 July8,2025 -26 -area (A1), which is uniform along the stacking dire ction(S1),wherein the value ofthe firstwidth (w1)is in the range between 2 mm and 20 mm.

4. Power semiconductor module (100) according to cl aim 1 or2, wherein the at least one opening (45) has a cros s sectionwith a second width (w2)extending along the first extensionarea (A1), which varies along the stacking directio n (S1),wherein the second width (w2) decreases from the to p surface(41) to the inner surface (42) along the stacking d irection(S1).

5. Power semiconductor module (100) according to an y of thepreceding claims, wherein the metal coating (30) co mprises anoble metaloran inertmetal.

6. Power semiconductor module (100) according to an y of thepreceding claims, wherein the metal coating (30) co mprises aplurality of layers arranged along the stacking dir ection(S1).

7. Power semiconductor module (100) according to an y of thepreceding claims, wherein the thickness of the meta l coatingisin the range between 0.1µm and 20µm.

8. Power semiconductor module (100) according to an y of thepreceding claims,wherein the atleastone opening (45)inthe resin body (40) is configured to receive at lea st onefirst terminal (60) and / or at least one second term inal (65)that electrically couples with the metal coating (3 0) and hasa means to secure planting of the at least one firs t terminal(60) and / or second terminal (65) at the at least on e opening(45).P2024,0595 WO N / P230292WO01 July8,2025 -27 -9. Power semiconductor module (100) according to cl aim 8,wherein the at least one first terminal (60) is con nectedinside the at least one opening (45) directly to th e metalcoating (30).

10. Power semiconductor module (100) according to a ny of thepreceding claims, wherein the at least one second t erminal(65) is connected inside the at least one opening ( 45) to areservoirofconductive glue (70).

11. Method of manufacturing the power semiconductor module(100) according to any of the preceding claims, com prising- providing a substrate (10) with a first circuitmetallization (20) arranged on a first main surface (11)ofthe substrate (10),- applying a metal coating (30) on a first portion (2 1) ofthe first circuit metallization (20), wherein the s econdportion (22) of the first circuit metallization (20 ) isfree ofthe metalcoating (30),- covering the substrate (10) and the first circuitmetallization (20) with a resin body (40) comprisin g atleast one opening (45) by a mold tool, concurrent w ith- applying pressure on the substrate (10) provided by pinsor protrusions of the mold tool, which are insertedthrough the at least one opening (45), such that th esubstrate (10)isflattened. 12.Method according to claim 11,comprising- inserting at least one first terminal (60) into the atleastone opening (45)and- joining the at least one first terminal (60) with t hemetal coating (30) by soldering, gluing or welding.P2024,0595 WO N / P230292WO01 July8,2025 -28 - 13.Method according to claim 11 or12,comprising- at least partially filling the at least one opening (45)with a conductive glue,such thata reservoirof conductive glue (70)isprovided,- inserting at least one second terminal (65) partly intothe reservoirofconductive glue (70),- hardening the conductive glue, such that the at lea st onesecond terminal (65) is connected with the reservoi r ofconductive glue (70).

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