Chemical solution for preventing peeling of two-dimensional material thin film and use of same

Abstract

The present invention relates to a chemical solution for preventing peeling of a two-dimensional material thin film and use of the same. More specifically, the present invention relates to a chemical solution for preventing peeling of a two-dimensional material thin film of a semiconductor and use of the same. The present invention provides: a composition for preventing peeling of a two-dimensional material semiconductor thin film, the composition containing at least two substances that are selected from the group consisting of a cationic surfactant, a water-soluble organic solvent, and an alkylamine, and optionally water; and a method for preventing peeling of a two-dimensional material semiconductor thin film, the method including bringing the composition into contact with the two-dimensional material semiconductor thin film.

Description

Chemical solution for preventing peeling of two-dimensional thin film materials and its use

[0001] The present invention relates to a chemical solution for preventing peeling of a two-dimensional material thin film and its use. More particularly, the present invention provides a chemical solution for preventing peeling of a two-dimensional material thin film of a semiconductor and its use.

[0002] In recent years, gate lengths have become shorter and shorter with the aim of improving semiconductor device performance, and this has led to significant changes in transistor structure. Specifically, transistor structure has evolved from the conventional planar type to the FinFET type and then to the next-generation GAA (Gate-All-Around) FET, with the transition to GAA currently underway. After this structural change to GAA, improving transistor performance requires both thinner channels (pathways for charge carriers) and changes to materials.

[0003] Conventionally, the semiconductor material has been silicon (Si), but thinning Si has the problem of significantly reducing mobility. On the other hand, two-dimensional materials such as MoS2 and WSe2 can be used as thin-film channels because their mobility is not impaired even when thinned (Patent Document 1).

[0004] The characteristics of two-dimensional materials are described in, for example, Patent Document 2. Two-dimensional materials are transition metal dichalcogenides such as MoS2. These two-dimensional materials have a band gap and are therefore attracting attention as semiconductor channel materials. Two-dimensional materials do not have dangling bonds, which are out-of-plane bonds, so they only have weak bonds (van der Waals bonds) in the vertical direction but strong bonds (covalent bonds) in the horizontal direction. Furthermore, two-dimensional materials have a planar structure, with each layer being as thin as 1 nm or less, which contributes to thinning of channels.

[0005] When using silicon (Si) as a semiconductor material, the Si layer adheres strongly to surrounding materials. This prevents water intrusion and delamination when rinsing with ultrapure water (UPW) to remove adhering or remaining contaminants after various processes such as dry etching and resist stripping. However, when using two-dimensional (2D) materials as semiconductor materials, delamination of the two-dimensional (2D) material from surrounding materials can occur when rinsing with ultrapure water after various processes such as dry etching and resist stripping. Specifically, when using two-dimensional (2D) materials such as MoS2 or WSe2 as semiconductor materials, they adhere to surrounding materials through weak van der Waals forces, which facilitate water penetration and lead to delamination. For example, when the two-dimensional (2D) material is MoS2, water can penetrate between the MoS2 layer and surrounding materials, causing delamination. (Patent Document 3)

[0006] Therefore, there is a need for a method to prevent the above-described delamination of two-dimensional materials in the manufacture of semiconductors using two-dimensional materials.

[0007] Yuan Liu, et al., Nature, 2021, 591, 43Zhuo F, et al., Research 2023, http / / doi.org / 10.34133 / research.0057J. H. Kim, et al., Sci. Rep., 2019, 9, 1641

[0008] The present invention provides a method for preventing the delamination of two-dimensional materials in the manufacturing of semiconductors using two-dimensional materials. More specifically, the present invention provides a chemical solution for preventing delamination of two-dimensional material thin films and use thereof.

[0009] In light of this background, the present inventors have discovered that, after various processes such as dry etching and resist stripping, pretreatment with a chemical solution that prevents peeling of adhering or remaining contaminants before rinsing with UPW (ultrapure water) can impart UPW rinse resistance, thereby solving the problem of peeling during UPW rinsing, and have completed the present invention.

[0010] The present invention includes the following aspects. <1> A composition for preventing peeling of a two-dimensional material semiconductor thin film, comprising at least two selected from the group consisting of a cationic surfactant, a water-soluble organic solvent, and an alkylamine, and optionally water. <2> The composition according to <1>, comprising a cationic surfactant and a water-soluble organic solvent. <3> The composition according to <1>, comprising a cationic surfactant and an alkylamine. <4> The composition according to <1>, comprising a water-soluble organic solvent and an alkylamine. <5> The composition according to <1>, comprising a cationic surfactant, a water-soluble organic solvent, and an alkylamine. <6> The composition according to <1>, comprising 0.01 to 10 mass% of a cationic surfactant, 10 to 99.9 mass% of a water-soluble organic solvent, and 0.01 to 10 mass% of an alkylamine. <7> The composition according to <1>, wherein the water-soluble organic solvent is one or more selected from the group consisting of methyl alcohol, ethyl alcohol, 1-propanol, 2-propanol, acetonitrile, tetrahydrofuran, acetone, methyl ethyl ketone, and dimethyl sulfoxide. <8> The composition according to <1>, wherein the cationic surfactant is one or more selected from the group consisting of aliphatic quaternary ammonium salts, aromatic quaternary ammonium salts, and heterocyclic quaternary ammonium salts. <9> The composition according to <1>, wherein the alkylamine is one or more selected from the group consisting of octadecylamine, heptadecylamine, hexadecylamine, pentadecylamine, tetradecylamine, tridecylamine, dodecylamine, undecylamine, decylamine, nonylamine, N-methyltridecylamine, N-methyltetradecylamine, N-methylpentadecylamine, N-methylhexadecylamine, N-methylheptadecylamine, N-methyloctadecylamine, N-methylnonadecylamine, N-methyldodecylamine, N,N-dimethyloctadecylamine, octylamine, heptylamine, hexylamine, and pentylamine. <10> The composition according to <3>, wherein the alkylamine is an alkylamine having 5 to 8 carbon atoms. <11> The composition according to <4>, wherein the alkylamine is an alkylamine having 9 or more carbon atoms.<12> A method for preventing peeling of a two-dimensional material semiconductor thin film, comprising contacting the composition according to <1> with the two-dimensional material semiconductor thin film. <13> A method for modifying the surface of a two-dimensional material semiconductor thin film, comprising contacting the composition according to <1> with the two-dimensional material semiconductor thin film. <14> A method for producing a two-dimensional material semiconductor, comprising contacting the composition according to <1> with the two-dimensional material semiconductor thin film. <15> A two-dimensional material semiconductor produced by the method according to <14>.

[0011] According to the present invention, in the manufacturing of semiconductors using two-dimensional materials, after various processes such as dry etching and resist stripping, adhered or remaining contaminants can be pretreated with a chemical solution that prevents peeling before UPW rinsing, thereby imparting UPW rinsing resistance and solving the problem of peeling during UPW rinsing.

[0012] 1 is a flowchart showing the steps of a method for preventing peeling of a two-dimensional material semiconductor thin film.

[0013] The present invention will be described in detail below, but the following description is not intended to limit the scope of the present invention.

[0014] 1. Composition for preventing peeling of a two-dimensional material semiconductor thin film The present invention provides a composition for preventing peeling of a two-dimensional material semiconductor thin film (hereinafter also referred to as a "chemical solution"). The composition of the present invention contains at least two members selected from the group consisting of a cationic surfactant, a water-soluble organic solvent, and an alkylamine, and optionally water.

[0015] In one embodiment of the present invention, there is provided a composition for preventing peeling of a two-dimensional material semiconductor thin film, comprising at least two selected from the group consisting of a cationic surfactant, a water-soluble organic solvent, and an alkylamine, and optionally water.

[0016] In one embodiment of the present invention, there is provided a composition for preventing peeling of a two-dimensional material semiconductor thin film, comprising, as main components, at least two selected from the group consisting of a cationic surfactant, a water-soluble organic solvent, and an alkylamine, and optionally water.

[0017] In one embodiment of the present invention, there is provided a composition for preventing peeling of a two-dimensional material semiconductor thin film, consisting essentially of at least two selected from the group consisting of a cationic surfactant, a water-soluble organic solvent, and an alkylamine, and optionally water.

[0018] In one embodiment of the present invention, there is provided a composition for preventing peeling of a two-dimensional material semiconductor thin film, comprising at least two members selected from the group consisting of a cationic surfactant, a water-soluble organic solvent, and an alkylamine, and optionally water.

[0019] In one embodiment of the present invention, there is provided a composition for preventing peeling of a two-dimensional material semiconductor thin film, comprising at least two selected from the group consisting of a cationic surfactant, a water-soluble organic solvent, and an alkylamine. In another embodiment of the present invention, there is provided a composition for preventing peeling of a two-dimensional material semiconductor thin film, comprising at least two selected from the group consisting of a cationic surfactant, a water-soluble organic solvent, and an alkylamine, and water.

[0020] The chemical solution of the present invention essentially comprises the following three additives: (A) an additive that imparts peeling resistance to UPW (ultrapure water), (B) an additive that prevents peeling when immersed in the chemical solution, and (W) an additive that optionally contains water.

[0021] Each of the constituent components will be described below.

[0022] As described above, in the semiconductor manufacturing process using two-dimensional materials, the UPW is rinsed to remove any remaining contaminants after various processes such as dry etching and resist stripping. The (A) UPW stripping resistance additive is added to the composition of the present invention to prevent the two-dimensional material from peeling from the surrounding materials during the UPW rinse. Examples of the (A) UPW stripping resistance additive include cationic surfactants and alkylamines. In one embodiment of the present invention, the (A) UPW stripping resistance additive is a cationic surfactant. In another embodiment of the present invention, the (A) UPW stripping resistance additive is an alkylamine.

[0023] Cationic surfactants that can be used in the composition for preventing peeling of two-dimensional material semiconductor thin films of the present invention include, but are not limited to, aliphatic quaternary ammonium salts, aromatic quaternary ammonium salts, and heterocyclic quaternary ammonium salts. In one embodiment of the present invention, the cationic surfactant is one or more selected from the group consisting of aliphatic quaternary ammonium salts, aromatic quaternary ammonium salts, and heterocyclic quaternary ammonium salts. In one embodiment of the present invention, a composition for preventing peeling of two-dimensional material semiconductor thin films is provided, in which the cationic surfactant is one or more selected from the group consisting of aliphatic quaternary ammonium salts, aromatic quaternary ammonium salts, and heterocyclic quaternary ammonium salts.

[0024] In the composition for preventing peeling of a two-dimensional material semiconductor thin film of the present invention, the cationic surfactant is contained in an amount of 0.01 to 10 mass%, preferably 0.05 to 1 mass%, and more preferably 0.1 to 0.5 mass%. In one embodiment of the present invention, a composition for preventing peeling of a two-dimensional material semiconductor thin film is provided, which contains 0.01 to 10 mass% of the cationic surfactant. In a preferred embodiment of the present invention, a composition for preventing peeling of a two-dimensional material semiconductor thin film is provided, which contains 0.05 to 1 mass% of the cationic surfactant. In a more preferred embodiment of the present invention, a composition for preventing peeling of a two-dimensional material semiconductor thin film is provided, which contains 0.1 to 0.5 mass% of the cationic surfactant. By containing the cationic surfactant in the above range, peeling resistance to UPW can be imparted to the composition for preventing peeling of a two-dimensional material semiconductor thin film.

[0025] Examples of the present invention's peel-off prevention of secondary dimensional material semiconductor thin films, compositions and surface active materials, andえば, 0.01 mass%, 0.05 mass%, 0.1 mass%, 0.2 mass%, 0.3 mass%, 0.4 mass%, 0.5% by mass, 0.6% by mass, 0.7% by mass, 0.8% by mass, 0.9% by mass, 1% by mass, 2% by mass, 3% by mass, 4% by mass, 5% by mass, 6% by mass, 7% by mass, 8% by mass, 9% by mass, and 10% by mass. The composition of the two-dimensional material semiconductor thin film of this invention, and the catalytic interface active agent, for example, 0.01~10 mass%, 0.05~10 mass%, 0.1~10 mass%, 0.2~10 mass%, 0.3~10 mass%, 0.4~10 mass%, 0.5~10 mass%, 0.6~10 mass%, 0.7~10 mass%, 0.8~10 mass%, 0.9~10 mass%, 1~10 mass%, 2~10 mass%, 3~10 mass%, 4~10 mass%, 5~10 mass%, 6~10 mass%, 7~10 mass%, 8~10 mass%, 9~10 mass%; 0.01–9% by mass, 0.05–9% by mass, 0.1–9% by mass, 0.2–9% by mass, 0.3–9% by mass, 0.4–9% by mass, 0.5–9% by mass, 0.6–9% by mass, 0.7–9% by mass, 0.8–9% by mass, 0.9–9% by mass, 1–9% by mass, 2–9% by mass, 3–9% by mass, 4–9% by mass, 5–9% by mass, 6–9% by mass, 7–9% by mass, 8–9% by mass; 0.01–8% by mass, 0.05–8% by mass, 0.1–8% by mass, 0.2–8% by mass, 0.3–8% by mass, 0.4–8% by mass, 0.5–8% by mass, 0.6–8% by mass, 0.7–8% by mass, 0.8–8% by mass, 0.9–8% by mass, 1–8% by mass, 2–8% by mass, 3–8% by mass, 4–8% by mass, 5–8% by mass, 6–8% by mass, 7–8% by mass; 0.01–7% by mass, 0.05–7% by mass, 0.1–7% by mass, 0.2–7% by mass, 0.3–7% by mass, 0.4–7% by mass, 0.5–7% by mass, 0.6–7% by mass, 0.7–7% by mass, 0.8–7% by mass, 0.9–7% by mass, 1–7% by mass, 2–7% by mass, 3–7% by mass, 4–7% by mass, 5–7% by mass, 6–7% by mass; 0.01–6% by mass, 0.05–6% by mass, 0.1–6% by mass, 0.2–6% by mass, 0.3–6% by mass, 0.4–6% by mass, 0.5–6% by mass, 0.6–6% by mass, 0.7–6% by mass, 0.8–6% by mass, 0.9–6% by mass, 1–6% by mass, 2–6% by mass, 3–6% by mass, 4–6% by mass, 5–6% by mass; 0.01–5% by mass, 0.05–5% by mass, 0.1–5% by mass, 0.2–5% by mass, 0.3–5% by mass, 0.4–5% by mass, 0.5–5% by mass, 0.6–5% by mass, 0.7–5% by mass, 0.8–5% by mass, 0.9–5% by mass, 1–5% by mass, 2–5% by mass, 3–5% by mass, 4–5% by mass; 0.01–4% by mass, 0.05–4% by mass, 0.1–4% by mass, 0.2–4% by mass, 0.3–4% by mass, 0.4–4% by mass, 0.5–4% by mass, 0.6–4% by mass, 0.7–4% by mass, 0.8–4% by mass, 0.9–4% by mass, 1–4% by mass, 2–4% by mass, 3–4% by mass; 0.01–3% by mass, 0.05–3% by mass, 0.1–3% by mass, 0.2–3% by mass, 0.3–3% by mass, 0.4–3% by mass, 0.5–3% by mass, 0.6–3% by mass, 0.7–3% by mass, 0.8–3% by mass, 0.9–3% by mass, 1–3% by mass, 2–3% by mass; 0.01–2% by mass, 0.05–2% by mass, 0.1–2% by mass, 0.2–2% by mass, 0.3–2% by mass, 0.4–2% by mass, 0.5–2% by mass, 0.6–2% by mass, 0.7–2% by mass, 0.8–2% by mass, 0.9–2% by mass, 1–2% by mass; 0.01–1% by mass, 0.05–1% by mass, 0.1–1% by mass, 0.2–1% by mass, 0.3–1% by mass, 0.4–1% by mass, 0.5–1% by mass, 0.6–1% by mass, 0.7–1% by mass, 0.8–1% by mass, 0.9–1% by mass; 0.01–0.9% by mass, 0.05–0.9% by mass, 0.1–0.9% by mass, 0.2–0.9% by mass, 0.3–0.9% by mass, 0.4–0.9% by mass, 0.5–0.9% by mass, 0.6–0.9% by mass, 0.7–0.9% by mass, 0.8–0.9% by mass; 0.01–0.8% by mass, 0.05–0.8% by mass, 0.1–0.8% by mass, 0.2–0.8% by mass, 0.3–0.8% by mass, 0.4–0.8% by mass, 0.5–0.8% by mass, 0.6–0.8% by mass, 0.7–0.8% by mass; 0.01–0.7% by mass, ~0.7–0.05% by mass, 0.1–0.7% by mass, 0.2–0.7% by mass, 0.3–0.7% by mass, 0.4–0.7% by mass, 0.5–0.7% by mass, 0.6–0.7% by mass; 0.01–0.6% by mass, 0.05–0.6% by mass, 0.1–0.6% by mass, 0.2–0.6% by mass, 0.3–0.6% by mass, 0.4–0.6% by mass.6% by mass, 0.5-0.6% by mass; 0.01-0.5% by mass, 0.05-0.5% by mass, 0.1-0.5% by mass, 0.2-0.5% by mass, 0.3-0.5% by mass, 0.4-0.5% by mass; 0.01-0.4 mass%, 0.05-0.4 mass%, 0.1-0.4 mass%, 0.2-0.4 mass%, 0.3-0.4 mass%; 0.01-0.3 mass%, 0.05-0.3 mass%, 0.1-0.3 mass%, 0.2-0.3 mass%; 0.01-0.2 mass%, 0.05-0.2 mass%, 0.1-0.2 mass%; 0.01-0.1 mass%, 0.05-0.1 mass%; It may be contained at 0.01 to 0.05% by mass.

[0026] (B) Additive for Preventing Peeling During Immersion in Chemical Solutions As described above, in the manufacturing process of semiconductors using two-dimensional materials, after various processes such as dry etching and resist stripping, adhering or remaining contaminants are rinsed with UPW. (B) Additive for Preventing Peeling During Immersion in Chemical Solutions is added to the composition of the present invention to prevent the two-dimensional material from peeling from surrounding materials during immersion in chemical solutions. Examples of (B) additives for preventing peeling during immersion in chemical solutions include water-soluble organic solvents and alkylamines. In one embodiment of the present invention, the (B) additive for preventing peeling during immersion in chemical solutions is a water-soluble organic solvent. In another embodiment of the present invention, the (B) additive for preventing peeling during immersion in chemical solutions is an alkylamine. In yet another embodiment of the present invention, the (B) additive for preventing peeling during immersion in chemical solutions is a water-soluble organic solvent and an alkylamine.

[0027] (B-1) Water-Soluble Organic Solvent Examples of water-soluble organic solvents that can be used in the composition for preventing peeling of a two-dimensional material semiconductor thin film of the present invention include, but are not limited to, methyl alcohol, ethyl alcohol, 1-propanol, 2-propanol, acetonitrile, tetrahydrofuran, acetone, methyl ethyl ketone, and dimethyl sulfoxide. In one embodiment of the present invention, the water-soluble organic solvent is one or more selected from the group consisting of methyl alcohol, ethyl alcohol, 1-propanol, 2-propanol, acetonitrile, tetrahydrofuran, acetone, methyl ethyl ketone, and dimethyl sulfoxide. In one embodiment of the present invention, a composition for preventing peeling of a two-dimensional material semiconductor thin film is provided, in which the water-soluble organic solvent is one or more selected from the group consisting of methyl alcohol, ethyl alcohol, 1-propanol, 2-propanol, acetonitrile, tetrahydrofuran, acetone, methyl ethyl ketone, and dimethyl sulfoxide.

[0028] In the composition for preventing peeling of a two-dimensional material semiconductor thin film of the present invention, the water-soluble organic solvent is contained in an amount of 10 to 99.9 mass%, preferably 20 to 99.9 mass%, and more preferably 40 to 99.9 mass%. In one embodiment of the present invention, a composition for preventing peeling of a two-dimensional material semiconductor thin film is provided, which contains 10 to 99.9 mass% of the water-soluble organic solvent. In a preferred embodiment of the present invention, a composition for preventing peeling of a two-dimensional material semiconductor thin film is provided, which contains 20 to 99.9 mass% of the water-soluble organic solvent. In a more preferred embodiment of the present invention, a composition for preventing peeling of a two-dimensional material semiconductor thin film is provided, which contains 40 to 99.9 mass% of the water-soluble organic solvent. By containing the water-soluble organic solvent in the above range, peeling can be prevented when the composition for preventing peeling of a two-dimensional material semiconductor thin film is immersed in a chemical solution.

[0029] In the composition for preventing peeling of the two-dimensional material semiconductor thin film of the present invention, the water-soluble organic solvent may be contained, for example, at 10% by mass, 20% by mass, 25% by mass, 30% by mass, 35% by mass, 40% by mass, 45% by mass, 50% by mass, 55% by mass, 60% by mass, 65% by mass, 70% by mass, 75% by mass, 80% by mass, 85% by mass, 90% by mass, 95% by mass, 96% by mass, 97% by mass, 98% by mass, 99% by mass, 99.9% by mass. In the composition for preventing peeling of the two-dimensional material semiconductor thin film of the present invention, the water-soluble organic solvent is, for example, 10 to 99.9% by mass, 20 to 99.9% by mass, 25 to 99.9% by mass, 30 to 99.9% by mass, 35 to 99.9% by mass, 40 to 99.9% by mass, 45 to 99.9% by mass, 50 to 99.9% by mass, 55 to 99.9% by mass, 60 to 99.9% by mass, 65 to 99.9% by mass, 70 to 99.9% by mass, 75 to 99.9% by mass, 80 to 99.9% by mass, 85 to 99.9% by mass, 90 to 99.9% by mass, 95 to 99.9% by mass, 96 to 99.9% by mass, 97 to 99.9% by mass, 98 to 99.9% by mass, 99 to 99.9% by mass; 10 to 99% by mass, 20 to 99% by mass, 25 to 99% by mass, 30 to 99% by mass, 35 to 99% by mass, 40 to 99% by mass, 45 to 99% by mass, 50 to 99% by mass, 55 to 99% by mass, 60 to 99% by mass, 65 to 99% by mass, 70 to 99% by mass, 75 to 99% by mass, 80 to 99% by mass, 85 to 99% by mass, 90 to 99% by mass, 95 to 99% by mass, 96 to 99% by mass, 97 to 99% by mass, 98 to 99% by mass; 10 to 98% by mass, 20 to 98% by mass, 25 to 98% by mass, 30 to 98% by mass, 35 to 98% by mass, 40 to 98% by mass, 45 to 98% by mass,10–96% by mass, 20–96% by mass, 25–96% by mass, 30–96% by mass, 35–96% by mass, 40–96% by mass, 45–96% by mass, 50–96% by mass, 55–96% by mass, 60–96% by mass, 65–96% by mass, 70–96% by mass, 75–96% by mass, 80–96% by mass, 85–96% by mass, 90–96% by mass, 95–96% by mass; 10–95% by mass, 20–95% by mass, 25–95% by mass, 30–95% by mass, 35–95% by mass, 40–95% by mass, 45–95% by mass, 50–95% by mass, 55–95% by mass, 60–95% by mass, 65–95% by mass, 70–95% by mass, 75–95% by mass, 80–95% by mass, 85–95% by mass, 90–95% by mass; 10–90% by mass, 20–90% by mass, 25–90% by mass, 30–90% by mass, 35–90% by mass, 40–90% by mass, 45–90% by mass, 50–90% by mass, 55–90% by mass, 60–90% by mass, 65–90% by mass, 70–90% by mass, 75–90% by mass, 80–90% by mass, 85–90% by mass; 10–85% by mass, 20–85% by mass, 25–85% by mass, 30–85% by mass, 35–85% by mass, 40–85% by mass, 45–85% by mass, 50–85% by mass, 55–85% by mass, 60–85% by mass, 65–85% by mass, 70–85% by mass, 75–85% by mass, 80–85% by mass; 10–80% by mass, 20–80% by mass, 25–80% by mass, 30–80% by mass, 35–80% by mass, 40–80% by mass, 45–80% by mass, 50–80% by mass, 55–80% by mass, 60–80% by mass, 65–80% by mass, 70–80% by mass, 75–80% by mass; 10–75% by mass, 20–75% by mass, 25–75% by mass, 30–75% by mass, 35–75% by mass, 40–75% by mass, 45–75% by mass, 50–75% by mass, 55–75% by mass, 60–75% by mass, 65–75% by mass, 70–75% by mass; 10–70% by mass, 20–70% by mass, 25–70% by mass, 30–70% by mass, 35–70% by mass, 40–70% by mass, 45–70% by mass, 50–70% by mass, 55–70% by mass, 60–70% by mass, 65–70% by mass; 10–65% by mass, 20–65% by mass, 25–65% by mass, 30–65% by mass, 35–65% by mass, 40–65% by mass, 45–65% by mass, 50–65% by mass, 55–65% by mass, 60–65% by mass;10 to 60% by mass, 20 to 60% by mass, 25 to 60% by mass, 30 to 60% by mass, 35 to 60% by mass, 40 to 60% by mass, 45 to 60% by mass, 50 to 60% by mass, 55 to 60% by mass; 10 to 55% by mass, 20 to 55% by mass, 25 to 55% by mass, 30 to 55% by mass, 35 to 55% by mass, 40 to 55% by mass, 45 to 55% by mass, 50 to 55% by mass; 10 to 50% by mass, 20 to 50% by mass, 25 to 50% by mass, 30 to 50% by mass, 35 to 50% by mass, 40 to 50% by mass, 45 to 50% by mass; 10 to 45% by mass, 20 to 45% by mass, 25 to 45% by mass, 30 to 45% by mass, 35 to 45% by mass, 40 to 45% by mass; 10 to 40% by mass, 20 to 40% by mass, 25 to 40% by mass, 30 to 40% by mass, 35 to 40% by mass; 10 to 35% by mass, 20 to 35% by mass, 25 to 35% by mass, 30 to 35% by mass; 10 to 30% by mass, 20 to 30% by mass, 25 to 30% by mass; 10 to 25% by mass, 20 to 25% by mass; 10 to 20% by mass; may be included.;

[0030] (B-2) Alkylamines Examples of alkylamines that can be used in the composition for preventing peeling of the two-dimensional material semiconductor thin film of the present invention include octadecylamine, heptadecylamine, hexadecylamine, pentadecylamine, tetradecylamine, tridecylamine, dodecylamine, undecylamine, decylamine, nonylamine, N-methyltridecylamine, N-methyltetradecylamine, N-methylpentadecylamine, N-methylhexadecylamine, N-methylheptadecylamine, N-methyloctadecylamine, N-methylnonadecylamine, N-methyldodecylamine, N,N-dimethyloctadecylamine, octylamine, heptylamine, hexylamine, and pentylamine, but are not limited thereto. In one embodiment of the present invention, the alkylamine is one or more selected from the group consisting of octadecylamine, heptadecylamine, hexadecylamine, pentadecylamine, tetradecylamine, tridecylamine, dodecylamine, undecylamine, decylamine, nonylamine, N-methyltridecylamine, N-methyltetradecylamine, N-methylpentadecylamine, N-methylhexadecylamine, N-methylheptadecylamine, N-methyloctadecylamine, N-methylnonadecylamine, N-methyldodecylamine, N,N-dimethyloctadecylamine, octylamine, heptylamine, hexylamine, and pentylamine. In one embodiment of the present invention, the alkylamine is one or more selected from the group consisting of octadecylamine, heptadecylamine, hexadecylamine, pentadecylamine, tetradecylamine, tridecylamine, dodecylamine, undecylamine, decylamine, nonylamine, N-methyltridecylamine, N-methyltetradecylamine, N-methylpentadecylamine, N-methylhexadecylamine, N-methylheptadecylamine, N-methyloctadecylamine, N-methylnonadecylamine, N-methyldodecylamine, N,N-dimethyloctadecylamine, octylamine, heptylamine, hexylamine, and pentylamine.

[0031] In the composition for preventing peeling of a two-dimensional material semiconductor thin film of the present invention, the alkylamine is contained in an amount of 0.01 to 10 mass%, preferably 0.01 to 1 mass%, and more preferably 0.1 to 1 mass%. In one embodiment of the present invention, a composition for preventing peeling of a two-dimensional material semiconductor thin film is provided, which contains 0.01 to 10 mass% of alkylamine. In a preferred embodiment of the present invention, a composition for preventing peeling of a two-dimensional material semiconductor thin film is provided, which contains 0.01 to 1 mass% of alkylamine. In a more preferred embodiment of the present invention, a composition for preventing peeling of a two-dimensional material semiconductor thin film is provided, which contains 0.1 to 1 mass% of alkylamine. By containing an alkylamine in the above range, the composition for preventing peeling of a two-dimensional material semiconductor thin film can prevent peeling when immersed in a chemical solution.

[0032] The prevention of peeling off of secondary material semiconductor thin films of this invention is composed of において, アルキルアミンは, and example えば, 0.01 mass%, 0.05 mass%, 0.1 mass%, 0.2 mass%, 0.3 mass%, 0.4 mass%, 0 .5% by mass, 0.6% by mass, 0.7% by mass, 0.8% by mass, 0.9% by mass, 1% by mass, 2% by mass, 3% by mass, 4% by mass, 5% by mass, 6% by mass, 7% by mass, 8% by mass, 9% by mass, and 10% by mass. This invention is composed of two-dimensional material semiconductor thin film peeling prevention material, and contains 0.01–10% by mass, 0.05–10% by mass, 0.1–10% by mass, 0.2–10% by mass, 0.3–10% by mass, 0.4–10% by mass, 0.5–10% by mass, 0.6–10% by mass, 0.7–10% by mass, 0.8–10% by mass, 0.9–10% by mass, 1–10% by mass, 2–10% by mass, 3–10% by mass, 4–10% by mass, 5–10% by mass, 6–10% by mass, 7–10% by mass, 8–10% by mass, and 9–10% by mass. 0.01–9% by mass, 0.05–9% by mass, 0.1–9% by mass, 0.2–9% by mass, 0.3–9% by mass, 0.4–9% by mass, 0.5–9% by mass, 0.6–9% by mass, 0.7–9% by mass, 0.8–9% by mass, 0.9–9% by mass, 1–9% by mass, 2–9% by mass, 3–9% by mass, 4–9% by mass, 5–9% by mass, 6–9% by mass, 7–9% by mass, 8–9% by mass; 0.01–8% by mass, 0.05–8% by mass, 0.1–8% by mass, 0.2–8% by mass, 0.3–8% by mass, 0.4–8% by mass, 0.5–8% by mass, 0.6–8% by mass, 0.7–8% by mass, 0.8–8% by mass, 0.9–8% by mass, 1–8% by mass, 2–8% by mass, 3–8% by mass, 4–8% by mass, 5–8% by mass, 6–8% by mass, 7–8% by mass; 0.01–7% by mass, 0.05–7% by mass, 0.1–7% by mass, 0.2–7% by mass, 0.3–7% by mass, 0.4–7% by mass, 0.5–7% by mass, 0.6–7% by mass, 0.7–7% by mass, 0.8–7% by mass, 0.9–7% by mass, 1–7% by mass, 2–7% by mass, 3–7% by mass, 4–7% by mass, 5–7% by mass, 6–7% by mass; 0.01–6% by mass, 0.05–6% by mass, 0.1–6% by mass, 0.2–6% by mass, 0.3–6% by mass, 0.4–6% by mass, 0.5–6% by mass, 0.6–6% by mass, 0.7–6% by mass, 0.8–6% by mass, 0.9–6% by mass, 1–6% by mass, 2–6% by mass, 3–6% by mass, 4–6% by mass, 5–6% by mass; 0.01–5% by mass, 0.05–5% by mass, 0.1–5% by mass, 0.2–5% by mass, 0.3–5% by mass, 0.4–5% by mass, 0.5–5% by mass, 0.6–5% by mass, 0.7–5% by mass, 0.8–5% by mass, 0.9–5% by mass, 1–5% by mass, 2–5% by mass, 3–5% by mass, 4–5% by mass; 0.01–4% by mass, 0.05–4% by mass, 0.1–4% by mass, 0.2–4% by mass, 0.3–4% by mass, 0.4–4% by mass, 0.5–4% by mass, 0.6–4% by mass, 0.7–4% by mass, 0.8–4% by mass, 0.9–4% by mass, 1–4% by mass, 2–4% by mass, 3–4% by mass; 0.01–3% by mass, 0.05–3% by mass, 0.1–3% by mass, 0.2–3% by mass, 0.3–3% by mass, 0.4–3% by mass, 0.5–3% by mass, 0.6–3% by mass, 0.7–3% by mass, 0.8–3% by mass, 0.9–3% by mass, 1–3% by mass, 2–3% by mass; 0.01–2% by mass, 0.05–2% by mass, 0.1–2% by mass, 0.2–2% by mass, 0.3–2% by mass, 0.4–2% by mass, 0.5–2% by mass, 0.6–2% by mass, 0.7–2% by mass, 0.8–2% by mass, 0.9–2% by mass, 1–2% by mass; 0.01–1% by mass, 0.05–1% by mass, 0.1–1% by mass, 0.2–1% by mass, 0.3–1% by mass, 0.4–1% by mass, 0.5–1% by mass, 0.6–1% by mass, 0.7–1% by mass, 0.8–1% by mass, 0.9–1% by mass; 0.01–0.9% by mass, 0.05–0.9% by mass, 0.1–0.9% by mass, 0.2–0.9% by mass, 0.3–0.9% by mass, 0.4–0.9% by mass, 0.5–0.9% by mass, 0.6–0.9% by mass, 0.7–0.9% by mass, 0.8–0.9% by mass; 0.01–0.8% by mass, 0.05–0.8% by mass, 0.1–0.8% by mass, 0.2–0.8% by mass, 0.3–0.8% by mass, 0.4–0.8% by mass, 0.5–0.8% by mass, 0.6–0.8% by mass, 0.7–0.8% by mass; 0.01–0.7% by mass, 0.05–0.7% by mass, 0.1–0.7% by mass, 0.2–0.7% by mass, 0.3–0.7% by mass, 0.4–0.7% by mass, 0.5–0.7% by mass, 0.6–0.7% by mass; 0.01–0.6% by mass, 0.05–0.6% by mass, 0.1–0.6% by mass, 0.2–0.6% by mass, 0.3–0.6% by mass, 0.4–0.6% by mass.6% by mass, 0.5-0.6% by mass; 0.01-0.5% by mass, 0.05-0.5% by mass, 0.1-0.5% by mass, 0.2-0.5% by mass, 0.3-0.5% by mass, 0.4-0.5% by mass; 0.01-0.4 mass%, 0.05-0.4 mass%, 0.1-0.4 mass%, 0.2-0.4 mass%, 0.3-0.4 mass%; 0.01-0.3 mass%, 0.05-0.3 mass%, 0.1-0.3 mass%, 0.2-0.3 mass%; 0.01-0.2 mass%, 0.05-0.2 mass%, 0.1-0.2 mass%; 0.01-0.1 mass%, 0.05-0.1 mass%; 0.01-0.05 mass%; It may be included in.

[0033] In one embodiment of the present invention, the alkylamine is an alkylamine having 5 to 8 carbon atoms. In one embodiment of the present invention, there is provided a composition for preventing peeling of a two-dimensional material semiconductor thin film, wherein the alkylamine is an alkylamine having 5 to 8 carbon atoms. Examples of alkylamines having 5 to 8 carbon atoms include, but are not limited to, octylamine, heptylamine, hexylamine, and pentylamine.

[0034] In one embodiment of the present invention, the alkylamine is an alkylamine having 9 or more carbon atoms. In one embodiment of the present invention, a composition for preventing peeling of a two-dimensional material semiconductor thin film is provided, wherein the alkylamine is an alkylamine having 9 or more carbon atoms. There is no particular upper limit as long as the number of carbon atoms is 9 or more, but the number is preferably 180 or less, more preferably 54 or less, and most preferably 20 or less. Examples of alkylamines having 9 or more carbon atoms include, but are not limited to, octadecylamine, heptadecylamine, hexadecylamine, pentadecylamine, tetradecylamine, tridecylamine, dodecylamine, undecylamine, decylamine, nonylamine, N-methyltridecylamine, N-methyltetradecylamine, N-methylpentadecylamine, N-methylhexadecylamine, N-methylheptadecylamine, N-methyloctadecylamine, N-methylnonadecylamine, N-methyldodecylamine, and N,N-dimethyloctadecylamine.

[0035] (W) Water The composition for preventing peeling of a two-dimensional material semiconductor thin film of the present invention may optionally contain water. The water that can be used in the composition for preventing peeling of a two-dimensional material semiconductor thin film of the present invention is preferably ultrapure water that is commonly used in semiconductor manufacturing.

[0036] In one embodiment of the present invention, there is provided a composition for preventing peeling of a two-dimensional material semiconductor thin film, comprising 0.01 to 10 mass % of a cationic surfactant, 10 to 99.9 mass % of a water-soluble organic solvent, and 0.01 to 10 mass % of an alkylamine.

[0037] (C) Other Additives The composition for preventing peeling of a two-dimensional material semiconductor thin film may further contain other additives, such as a pH adjuster, phosphoric acid, sulfuric acid, hydrochloric acid, or nitric acid, as necessary. In one embodiment of the present invention, the composition for preventing peeling of a two-dimensional material semiconductor thin film further contains a pH adjuster, and the pH can be adjusted taking into consideration other materials that come into contact with the liquid. In one embodiment of the present invention, the composition for preventing peeling of a two-dimensional material semiconductor thin film of the present invention contains phosphoric acid.

[0038] 2. Methods using a composition for preventing peeling of a two-dimensional material semiconductor thin film Methods using a composition for preventing peeling of a two-dimensional material semiconductor thin film include, but are not limited to, a method for preventing peeling of a two-dimensional material semiconductor thin film, comprising contacting the two-dimensional material semiconductor thin film with the composition for preventing peeling of a two-dimensional material semiconductor thin film; a method for modifying the surface of a two-dimensional material semiconductor thin film, comprising contacting the two-dimensional material semiconductor thin film with the composition for preventing peeling of a two-dimensional material semiconductor thin film; and a method for producing a semiconductor, comprising contacting the two-dimensional material semiconductor thin film with the composition for preventing peeling of a two-dimensional material semiconductor thin film.

[0039] In the method of the present invention, "contacting" includes, but is not limited to, for example, immersion, application, spraying, and the like.

[0040] By using the method of the present invention for using the composition for preventing peeling of a two-dimensional material semiconductor thin film, in the production of semiconductors using two-dimensional materials, after various processes such as dry etching and resist stripping, adhered or remaining contaminants can be pretreated with a chemical solution that prevents peeling before UPW rinsing, thereby imparting UPW rinsing resistance and solving the problem of peeling during UPW rinsing.

[0041] In one embodiment of the present invention, there is provided a method for preventing delamination of a two-dimensional material semiconductor thin film, comprising contacting the two-dimensional material semiconductor thin film with the composition for preventing delamination of a two-dimensional material semiconductor thin film described above.

[0042] In one embodiment of the present invention, there is provided a method for modifying the surface of a two-dimensional material semiconductor thin film, comprising contacting the two-dimensional material semiconductor thin film with the composition for preventing delamination of the two-dimensional material semiconductor thin film described above.

[0043] In one embodiment of the present invention, there is provided a method for producing a semiconductor, which includes contacting a two-dimensional material semiconductor thin film with the composition for preventing peeling of the two-dimensional material semiconductor thin film. In one embodiment of the present invention, a two-dimensional material semiconductor can be obtained by carrying out the semiconductor production method of the present invention.

[0044] The present invention will be described in more detail below with reference to examples, but these examples are given for illustrative purposes only and the present invention is not limited to these examples.

[0045] A composition for preventing peeling of a two-dimensional material semiconductor thin film was prepared, containing at least two selected from the group consisting of a cationic surfactant, a water-soluble organic solvent, and an alkylamine, and optionally water, and its peeling prevention effect was confirmed. The composition for preventing peeling of a two-dimensional material semiconductor thin film was prepared by mixing each of the components.

[0046] <Method for confirming peeling prevention effect> The peeling prevention effect when using a composition for preventing peeling of a two-dimensional material semiconductor thin film of the present invention was confirmed by the following procedure. (1) Preparation of two-dimensional material thin film A MoS2 sample was prepared by sequentially depositing SiO2 (thickness: 1000 Å) and two layers of MoS2 (total thickness of the two layers: approximately 8 to 13 Å) on a silicon substrate. (2) Imparting peeling prevention effect A 1 cm x 1 cm (immersion treatment area: 1 cm) was prepared. ２ The MoS2 sample was immersed in a 2D material thin film anti-peeling solution heated to 50°C for 10 minutes to impart an anti-peeling effect. (3) Evaluation of anti-peeling effect: The sample was then rinsed in UPW at 25°C for 10 seconds. The MoS2 sample with the anti-peeling effect was then immersed in UPW at 25°C for 5 minutes. The presence or absence of MoS2 peeling during the UPW rinse or UPW immersion was visually confirmed to confirm the anti-peeling effect.

[0047] Embodiment 1 In one embodiment of the present invention, there is provided a composition for preventing peeling of a two-dimensional material semiconductor thin film, comprising a cationic surfactant and a water-soluble organic solvent.

[0048] In Examples 1 to 11 and Comparative Examples 1 to 4, chemical solutions were prepared according to the table below, and the peeling prevention effect was confirmed. The results are shown in the table below.

[0049]

[0050] By using the chemical solution of the present invention, a good peeling prevention effect could be obtained.

[0051] Embodiment 2 In one embodiment of the present invention, there is provided a composition for preventing peeling of a two-dimensional material semiconductor thin film, comprising a cationic surfactant and an alkylamine.

[0052] In Examples 12 to 15 and Comparative Examples 5 to 8, chemical solutions were prepared according to the table below, and the peeling prevention effect was confirmed. The results are shown in the table below.

[0053]

[0054] By using the chemical solution of the present invention, a good peeling prevention effect could be obtained.

[0055] Embodiment 3 In one embodiment of the present invention, there is provided a composition for preventing peeling of a two-dimensional material semiconductor thin film, comprising a water-soluble organic solvent and an alkylamine.

[0056] In Examples 16 to 28 and Comparative Examples 9 to 15, chemical solutions were prepared according to the table below, and the peeling prevention effect was confirmed. The results are shown in the table below.

[0057]

[0058] The peeling suppression effect of using phosphoric acid as a pH adjuster was investigated.

[0059] In Examples 29 to 41 and Comparative Examples 16 to 22, chemical solutions were prepared according to the table below, and the peeling prevention effect was confirmed. The results are shown in the table below.

[0060]

[0061] By using the chemical solution of the present invention, a good peeling prevention effect could be obtained.

[0062] Embodiment 4 In one embodiment of the present invention, there is provided a composition for preventing peeling of a two-dimensional material semiconductor thin film, comprising a cationic surfactant, a water-soluble organic solvent, and an alkylamine.

[0063] In Example 42 and Comparative Example 23, a chemical solution containing a cationic surfactant, a water-soluble organic solvent, an alkylamine, and water was prepared, and the peeling prevention effect was confirmed. The results are shown in the table below.

[0064]

[0065] By using the chemical solution of the present invention, a good peeling prevention effect could be obtained.

[0066] As described above, according to the present invention, in the manufacturing of semiconductors using two-dimensional materials, after various processes such as dry etching and resist stripping, it has been confirmed that by pretreating the material with a chemical solution that prevents peeling before UPW rinsing to remove any adhering or remaining contaminants, it is possible to impart resistance to UPW rinsing, thereby solving the problem of peeling during UPW rinsing.

[0067] The composition for preventing peeling of a two-dimensional material semiconductor thin film of the present invention can be suitably used to prevent peeling of a layer of a two-dimensional material in the production of a semiconductor using a two-dimensional material.

Claims

1. A composition for preventing peeling of a two-dimensional material semiconductor thin film, comprising at least two members selected from the group consisting of a cationic surfactant, a water-soluble organic solvent, and an alkylamine, and optionally water.

2. The composition of claim 1, comprising a cationic surfactant and a water-soluble organic solvent.

3. The composition of claim 1, comprising a cationic surfactant and an alkylamine.

4. The composition of claim 1, comprising a water-soluble organic solvent and an alkylamine.

5. The composition of claim 1, comprising a cationic surfactant, a water-soluble organic solvent, and an alkylamine.

6. The composition according to claim 1, which contains 0.01 to 10% by mass of a cationic surfactant, 10 to 99.9% by mass of a water-soluble organic solvent, and 0.01 to 10% by mass of an alkylamine.

7. The composition according to claim 1, wherein the water-soluble organic solvent is one or more selected from the group consisting of methyl alcohol, ethyl alcohol, 1-propanol, 2-propanol, acetonitrile, tetrahydrofuran, acetone, methyl ethyl ketone, and dimethyl sulfoxide.

8. The composition according to claim 1, wherein the cationic surfactant is one or more selected from the group consisting of aliphatic quaternary ammonium salts, aromatic quaternary ammonium salts, and heterocyclic quaternary ammonium salts.

9. The composition of claim 1, wherein the alkylamine is one or more selected from the group consisting of octadecylamine, heptadecylamine, hexadecylamine, pentadecylamine, tetradecylamine, tridecylamine, dodecylamine, undecylamine, decylamine, nonylamine, N-methyltridecylamine, N-methyltetradecylamine, N-methylpentadecylamine, N-methylhexadecylamine, N-methylheptadecylamine, N-methyloctadecylamine, N-methylnonadecylamine, N-methyldodecylamine, N,N-dimethyloctadecylamine, octylamine, heptylamine, hexylamine, and pentylamine.

10. The composition of claim 3, wherein the alkylamine is an alkylamine having 5 to 8 carbon atoms.

11. The composition according to claim 4, wherein the alkylamine is an alkylamine having 9 or more carbon atoms.

12. A method for preventing delamination of a two-dimensional material semiconductor thin film, comprising contacting the two-dimensional material semiconductor thin film with the composition of claim 1.

13. A method for modifying the surface of a two-dimensional material semiconductor thin film, comprising contacting the two-dimensional material semiconductor thin film with the composition of claim 1.

14. A method for producing a two-dimensional material semiconductor, comprising contacting the composition of claim 1 with a two-dimensional material semiconductor thin film.

15. A two-dimensional material semiconductor produced by the method of claim 14.

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