Integrated gas sensing-computing synaptic device, synaptic response thereof and preparation method therefor

Abstract

The present application belongs to the technical field of nanoelectronic devices, and provides an integrated gas sensing-computing synaptic device and a preparation method therefor. The device comprises: a first functional layer, a barrier layer, a second functional layer, a first metal electrode, and a second metal electrode; the first functional layer is heavily doped silicon; the second functional layer uses CuOx material, such that defect energy levels are formed by interstitial oxygen and copper vacancies; the barrier layer increases contact area between the second functional layer and a test gas; a direct current voltage scan is applied between the first metal electrode and the second metal electrode, to simulate resistive switching behavior of a memristor; the second functional layer reacts with the test gas, to implement a gas sensing function; a constant voltage signal is applied between the first metal electrode and the second metal electrode, and in a gas pulse environment, a current response state exhibits a synaptic response. The present application can implement in-situ sensing and processing of gas information, improving information processing efficiency, and the gas information inference method of the integrated gas sensing-computing device is simpler.

Description

A gas sensing and computing integrated synapse device, a synaptic response thereof and a preparation method thereof TECHNICAL FIELD

[0001] The present application belongs to the technical field of nano-electronic devices, and more particularly relates to a gas sensing and computing integrated synapse device, a synaptic response thereof and a preparation method thereof. BACKGROUND

[0002] In recent years, with the development of artificial neural network technology, the bionic sensing and computing integrated architecture is considered to be an effective method to solve the current computer energy efficiency problem. The bionic optical sensing and computing integrated device has been proven to have a wide development prospect in the field of machine vision. However, at present, the development of bionic gas sensing and computing integrated systems is still very limited and has not been widely used in in-situ sensing and computing task processing.

[0003] In traditional gas sensing and computing systems, two functional modules of sensing and information processing are usually required. After the external gas information is converted into an electrical signal by the sensing module, it is filtered, amplified and integrated and analyzed by the information processing module. The sensing module is usually realized by a gas sensor array, and the information processing and computing module is composed of a transistor or a memristor array. This architecture in which the sensing module and the computing module are separated from each other makes the hardware structure complex, and the system volume is large, there is a large time delay between information sensing and computing, and additional power consumption is required for data transmission. Therefore, it is necessary to use a gas sensing and computing integrated device with in-situ sensing and computing function to simplify the system architecture, reduce the information processing distance, and cater to more complex task processing functions.

[0004] However, the current gas sensing and computing devices are limited to resistive devices in different resistance states in different atmospheres, and cannot realize real-time dynamic gas information sensing and processing, the computing function is limited, the computing efficiency is not high, and a three-terminal architecture is usually used, and the device preparation process is complex. Therefore, exploring a gas sensing and computing integrated device with simple preparation steps, which can realize bionic neural morphological response to gas signals and efficiently process dynamic gas information, has a very long-term significance for the development of the next generation of gas sensing and computing integrated systems.

[0005] SUMMARY

[0006] In view of the defects of the prior art, the purpose of the present application is to provide a gas sensing and computing integrated synapse device, a synaptic response thereof and a preparation method thereof, which aims to solve the problems that the current commonly used gas sensing and computing devices cannot provide real-time dynamic sensing and processing for gas signals, the information processing function is limited and the efficiency is poor, and the bionic neural morphological response to gas pulses cannot be realized and the preparation process is relatively complex.

[0007] To achieve the above object, the application provides a gas sensing and integrated synapse device, comprising a first functional layer, a barrier layer, a second functional layer, a first metal electrode and a second metal electrode.

[0008] The second functional layer is divided into a first part of the second functional layer and a second part of the second functional layer; the barrier layer is located between the first functional layer and the first part of the second functional layer, and the second metal electrode is located above the first part of the second functional layer; the second part of the second functional layer is located above the first functional layer, and the first metal electrode is also located above the first functional layer.

[0009] The first functional layer is heavily doped silicon; the second functional layer adopts CuO x material, so that there are defect energy levels formed by interstitial oxygen and copper vacancies; the barrier layer is used to raise the first part of the second functional layer to increase the contact area of the second functional layer with the test gas; the first metal electrode forms ohmic contact with the first functional layer; the second metal electrode forms ohmic contact with the second functional layer; a direct current voltage scan is applied between the first metal electrode and the second metal electrode to simulate the resistance change behavior of the memristor; the second functional layer is used to react with the test gas to realize the sensing function of the test gas; when a constant voltage signal is applied between the first metal electrode and the second metal electrode, the current response state presents a synapse response in a gas pulse environment; and 0.5≤x≤2.

[0010] Further preferably, the impurity doped in the first functional layer is one or more of B, Ga, In, P, As and Sb;

[0011] Further preferably, the first metal electrode and the second metal electrode are one of Pt, Al, Ti, W, Ag, TiN or Cu; and the barrier layer is one of SiO2, Si3N4, Al2O3, HfO2 or Ta2O5.

[0012] Further preferably, the thickness of the first functional layer is 3nm-10um, the thickness of the barrier layer is 3nm-500nm, the thickness of the second functional layer is 3nm-500nm, and the thickness of the first and second metal electrodes is 3nm-200nm.

[0013] Further preferably, the test gas includes an oxidizing gas or a reducing gas; wherein the oxidizing gas includes O2, SO2, NO2 or H2S; and the reducing gas includes H2 or CO.

[0014] Further preferably, the synapse response includes excitatory postsynaptic current, pulse amplitude-dependent plasticity, double-pulse differentiation and pulse frequency-dependent plasticity.

[0015] In a second aspect, based on the gas sensing and integrated synapse device provided by the application, the application provides a corresponding synapse response method, comprising the following steps:

[0016] placing the gas-sensing integrated synapse device in a sealed space filled with N2 or inert gas, introducing a test gas pulse into the sealed space, and applying a constant voltage between the first metal electrode and the second metal electrode to read the current response state of the gas-sensing integrated synapse device;

[0017] analyzing the change in the current response state as the test gas pulse time increases to obtain the sensing characteristics of the gas-sensing integrated synapse device for the test gas.

[0018] In a third aspect, based on the gas-sensing integrated synapse device provided in the present application, the present application provides a corresponding synapse response method, specifically:

[0019] placing the gas-sensing integrated synapse device in a sealed space filled with N2 or inert gas, introducing a test gas pulse into the sealed space, and applying a constant voltage between the first metal electrode and the second metal electrode to read the current response state of the gas-sensing integrated synapse device;

[0020] In a fourth aspect, based on the gas-sensing integrated synapse device provided in the present application, the present application provides a corresponding synapse response method, specifically:

[0021] placing the gas-sensing integrated synapse device in a sealed space filled with N2 or inert gas, introducing a test gas pulse into the sealed space, and applying a constant voltage between the first metal electrode and the second metal electrode to read the current response state of the gas-sensing integrated synapse device;

[0022] In a fifth aspect, based on the gas-sensing integrated synapse device provided in the present application, the present application provides a corresponding preparation method, specifically including the following steps:

[0023] S1: preparing a doped Si layer and performing planarization treatment to obtain a first functional layer;

[0024] S2: preparing a patterned mask layer of the barrier layer on the first functional layer;

[0025] S3: preparing the barrier layer on the patterned mask layer of the barrier layer and peeling off the mask layer to form the barrier layer;

[0026] S4: preparing a patterned mask layer of the second functional layer on the barrier layer;

[0027] S5: preparing the second functional layer on the patterned mask layer of the second functional layer and peeling off the mask layer to form the second functional layer;

[0028] S6: preparing a patterned mask layer of the first metal electrode and the second metal electrode on the first functional layer and the second functional layer, respectively;

[0029] S7: preparing the first metal electrode and the second metal electrode on the patterned mask layer of the first metal electrode and the second metal electrode, and peeling off the mask layer to form the first metal electrode and the second metal electrode, and completing the preparation of the gas sensing and calculating integrated device.

[0030] Further preferably, the preparation method of the first metal electrode, the barrier layer, the second functional layer and the second metal electrode is one of a sputtering method, a physical vapor deposition method, a chemical vapor deposition method, a molecular beam epitaxy method and an electrochemical method.

[0031] Further preferably, S1 specifically comprises: preparing a doped Si layer by using a molten body in a single crystal Si pulling method or a zone melting method; or growing an intrinsic silicon layer by a sputtering method, a physical vapor deposition method or a chemical vapor deposition method, and then injecting impurities by a thermal diffusion method or an ion implantation method to prepare heavily doped n-type Si or p-type Si, cutting the doped Si into Si pieces after the doping is completed, and performing a planarization treatment on the Si pieces by using a chemical mechanical planarization device to form the first functional layer.

[0032] Overall, compared with the prior art, the above technical solutions conceived by the present application have the following beneficial effects:

[0033] The present application provides a gas sensing and calculating integrated device and a preparation method thereof, wherein the first functional layer adopts heavily doped p-type silicon or heavily doped n-type silicon; the second functional layer adopts CuO x , and a heterojunction structure formed by the first functional layer and the second functional layer strengthens the gas sensing response of the device. When gas molecules reach the interface between the first functional layer and the second functional layer, the gas molecules will affect the carrier concentration inside the material due to surface adsorption, thereby causing a change in the current response inside the device; compared with existing gas sensing and calculating systems, the CuO x based on the above structure has a better convenient calculation process, and through the neuromorphic response to the gas pulse signal, in-situ sensing and processing of gas information can be realized, and the information processing efficiency is improved. The gas sensing and calculating integrated device based on the neuromorphic response has a simpler gas information calculation method, and has the advantages of a simpler device structure and a simpler preparation process. BRIEF DESCRIPTION OF DRAWINGS

[0034] FIG. 1 is a structural schematic diagram of a gas sensing and calculating integrated device based on CuO x provided by an embodiment of the present application; wherein 1 is a first functional layer; 2 is a barrier layer; 3 is a second functional layer; 4 is a second metal electrode; and 5 is a first metal electrode.

[0035] FIG. 2 is a current-voltage curve diagram of a CuO x gas sensing and calculating integrated device under single direct current voltage scanning provided by an embodiment of the present application.

[0036] Fig. 3 is a current-voltage curve of the CuO x gas sensing and calculating integrated device under three continuous direct current voltage scans;

[0037] Fig. 4 is a current response change curve of the CuO x gas sensing and calculating integrated device under the input of 750s 50ppm NO2 gas under the reading of +1V voltage in a sealed space;

[0038] Fig. 5 is a current response change curve of the CuO x gas sensing and calculating integrated device under the input of 300s 5ppm, 10ppm, 20ppm, 30ppm, 40ppm and 50ppm NO2 gas respectively under the reading of +1V voltage in a sealed space;

[0039] Fig. 6 is a current response change curve of the CuO x gas sensing and calculating integrated device under the input of 5 times of 0ppm NO2 gas pulse with a single pulse duration of 200s and intervals of 200s and 400s under the reading of +1V voltage in a sealed space. DETAILED DESCRIPTION

[0040] The embodiments of the present application will be described below with reference to the accompanying drawings.

[0041] The present application provides a CuO x based gas sensing and calculating integrated device, which changes the number of carriers inside the material by using the gas adsorption process, so that the current response of the device under constant voltage reading changes, and a neuromorphic response is realized. The device proposed in the present application can realize in-situ processing of gas sensing information, improve the information processing efficiency, and the gas calculation method is simpler, which helps to complete complex tasks. More specifically, the present application provides a gas sensing and calculating integrated memristive synapse device, which comprises a first functional layer, a barrier layer, a second functional layer, and a first metal electrode and a second metal electrode; the first functional layer is made of heavily doped silicon; the second functional layer is made of CuO x material; the barrier layer is located between the first functional layer and the second functional, and lifts part of the second functional layer to increase the contact area between the second functional layer and the gas; the first metal electrode forms ohmic contact with the first functional layer; the second metal electrode forms ohmic contact with the second functional layer; the gas sensing and calculating integrated memristive synapse device of the present application has an analog conductance adjustable memristive characteristic under direct current scanning; at the same time, the device has CuO xThe functional layer can react with oxidizing or reducing gas to realize the sensing function of the gas; the device can produce typical synaptic responses such as excitatory postsynaptic current (EPSC), spike amplitude-dependent plasticity (SADP), paired pulse facilitation (PPF), and spike rate-dependent plasticity (SRDP) under the stimulation of oxidizing or reducing pulses; therefore, the device has the gas sensing and processing integrated function, and can complete complex tasks such as sensing and information processing of oxidizing or reducing gas in a single device.

[0042] In one aspect, the application provides a gas sensing and processing integrated device based on CuO x , including a first functional layer 1, a barrier layer 2, a second functional layer 3, a first metal electrode 5 and a second metal electrode 4 stacked in order from bottom to top.

[0043] The first functional layer is made of heavily doped p-type silicon or heavily doped n-type silicon, and the impurities doped in the first functional layer can be one or more of B, Ga, In, P, As and Sb; the resistivity is lower than 10 ohm-cm.

[0044] The second functional layer is made of CuO x material; wherein 0.5≤x≤2, so that there are defect energy levels formed by interstitial oxygen and copper vacancies, forming a P-type conductive type.

[0045] The first metal electrode is used to read the current response state of the device; a direct current voltage is applied between the first metal electrode and the second metal electrode, and when the voltage scanning value is higher than the threshold value of the device, the device will exhibit a memristor resistance change behavior.

[0046] The specific working mechanism of the first functional layer and the second functional layer is as follows: when the test gas molecules reach the interface between the first functional layer and the second functional layer, the gas molecules will affect the carrier concentration in the material due to surface adsorption; when the test gas is a reducing gas, the gas molecules will transfer electrons to the second functional layer during the adsorption process; this behavior will cause the carrier concentration in the second functional layer to decrease, the absolute value of the overall current response of the device to decrease, and the overall current response change rate to increase; when the test gas is an oxidizing gas, the gas molecules will steal electrons from the second functional layer during the adsorption process; this behavior will cause the carrier concentration in the second functional layer to increase, the absolute value of the overall current response of the device to increase, and the overall current response change rate to increase.

[0047] Further preferably, the first metal electrode and the second metal electrode are one of Pt, Al, Ti, W, Ag, TiN or Cu; and the barrier layer is one of SiO2, Si3N4, Al2O3, HfO2 or Ta2O5.

[0048] Further preferably, the first functional layer has a thickness of 3 nm to 10 um, the barrier layer has a thickness of 3 nm to 500 nm, the second functional layer has a thickness of 3 nm to 500 nm, and the first and second metal electrodes each have a thickness of 3 nm to 200 nm.

[0049] Further preferably, the test gas can be an oxidizing gas or a reducing gas; the oxidizing gas includes O2, SO2, NO2 or H2S; and the reducing gas includes H2 or CO.

[0050] Further preferably, the device is placed in a sealed space filled with N2 or an inert gas, a test gas pulse is introduced into the space, a constant voltage is applied between the first metal electrode and the second metal electrode, and the current response state of the device is read; as the test gas pulse time increases, the amplitude of the change in the current of the device also increases, thereby exhibiting the sensing characteristics of the device to the test gas.

[0051] Further preferably, the device is placed in a sealed space filled with N2 or an inert gas, a test gas pulse is introduced into the space, and under the condition that the test gas pulse time is the same, the greater the gas concentration, the greater the amplitude of the change in the current of the device, thereby exhibiting the pulse amplitude response characteristics in the neuromorphic response.

[0052] Further preferably, the device is placed in a sealed space filled with N2 or an inert gas, and a plurality of test gas pulses are introduced into the space; the shorter the interval between the test gas pulses, the greater the rate of change in the current of the device, thereby exhibiting the pulse frequency response characteristics in the neuromorphic response.

[0053] In another aspect, the application provides the above CuO x The application also provides a preparation method of the gas sensing and integrating device.

[0054] S1: a doped Si layer is prepared by using a molten body doping method in a single crystal Si pulling method or a zone melting method; or an intrinsic silicon layer is grown by a sputtering method, a physical vapor deposition method or a chemical vapor deposition method, and then impurities are injected by a thermal diffusion method or an ion implantation method to prepare a heavily doped n-type Si or p-type Si; after the doping is completed, the Si piece is cut and subjected to a planarization treatment by a chemical mechanical planarization device to form a first functional layer; the thickness of the first functional layer is 3 nm to 500 um;

[0055] S2: a patterned mask layer of a barrier layer is prepared on the first functional layer;

[0056] S3: a barrier layer is prepared on the patterned mask layer of the barrier layer, and the mask layer is stripped to form the barrier layer;

[0057] S4: a patterned mask layer of a second functional layer is prepared on the barrier layer;

[0058] S5: preparing a second functional layer on the patterned mask layer of the second functional layer, and peeling off the mask layer to form the second functional layer;

[0059] S6: preparing a patterned mask layer of the first metal electrode and the second metal electrode on the first functional layer and the second functional layer respectively;

[0060] S7: preparing the first metal electrode and the second metal electrode on the patterned mask layer, and peeling off the mask layer to form the first metal electrode and the second metal electrode, thereby completing the preparation of the gas sensing integrated device.

[0061] Further preferably, the preparation method of the first metal electrode, the barrier layer, the second functional layer and the second metal electrode is one of a sputtering method, a physical vapor deposition method, a chemical vapor deposition method, a molecular beam epitaxy method and an electrochemical method.

[0062] In order to further illustrate the gas sensing integrated device and the preparation method thereof provided by the embodiments of the present application, the embodiments of the present application are described below in conjunction with the drawings in the embodiments of the present application.

[0063] Embodiment 1

[0064] As shown in FIG. 1, the gas sensing integrated device provided by the embodiments of the present application is a four-layer planar structure, and the specific preparation process is as follows:

[0065] Si with a crystal orientation of (100) is selected as a seed crystal, and a silicon rod is prepared in a molten Si during a single crystal pulling process and is subjected to B element degenerate doping. A silicon wafer with a resistivity of 0.005 ohm-cm is obtained by mechanical cutting and chemical mechanical planarization process, thereby obtaining a first functional layer 1. The silicon wafer is cut into a 1 cm*1 cm size sample, placed in an acetone solution, cleaned by an ultrasonic cleaning machine for 10-15 minutes, taken out of the acetone solution, placed in an ethanol solution again, and cleaned by the ultrasonic cleaning machine for 10-15 minutes again. The power of the ultrasonic cleaning machine is 20 W. After cleaning, deionized water is used for cleaning, and a nitrogen gun is used for drying.

[0066] A patterned mask layer of the barrier layer is prepared. A SiO2 layer of the barrier layer is prepared by PECVD, and the mask layer is peeled off by acetone. The thickness of the barrier layer is 50 nm.

[0067] A patterned mask layer of the second functional layer is prepared. CuO xThe second functional layer is prepared by sputtering a Cu target using a direct current power source. The thickness of the second functional layer can be adjusted by adjusting the sputtering power and the sputtering time. In this embodiment, the second functional layer 3 with a thickness of 300 nm is prepared by sputtering for 3000 s at a power of 100 W using O2:Ar=32:16 and a total pressure of 0.5 Pa. The patterned mask layer is then stripped using acetone.

[0068] The patterned mask layer for preparing the metal electrodes is prepared by magnetron sputtering to prepare the first and second metal electrodes. More specifically, a Pt target is used to sputter a first and second metal electrode with a thickness of 100 nm using a direct current power source. The patterned mask layer is then stripped using acetone.

[0069] After the above steps are completed, the CuO x The gas sensing and calculating integrated device is prepared. The device structure is shown in FIG. 1.

[0070] Embodiment 2

[0071] In this embodiment, the Aglient 1500A and a gas pulse generator are used to test the direct current electrical scanning and the gas pulse of the gas sensing and calculating integrated device.

[0072] FIG. 2 is a direct current-voltage relationship curve of the gas sensing and calculating integrated device provided by this embodiment under continuous scanning of 0V-+3V voltage. During the single forward voltage scanning process, the device shows a change from a high resistance state to a low resistance state, indicating that the device has a basic memristive characteristic.

[0073] FIG. 3 is a direct current-voltage relationship curve of the gas sensing and calculating integrated device provided by this embodiment under continuous scanning of 0V-+3V voltage for three times. During the continuous forward voltage scanning process, the device shows a continuous increase in conductance, indicating that the device has an analog conductance adjustable characteristic.

[0074] FIG. 4 is a CuO x The gas sensing and calculating integrated device is placed in a sealed test space filled with N2 or other inert gas. When the NO2 gas pulse is introduced into the space, a constant +1V voltage is applied between the first and second metal electrodes, and the current response state of the device is read. As the NO2 gas pulse time increases, the device current value also increases, showing the sensing characteristics of the device to NO2 gas. After the NO2 gas is removed, the current of the device shows a slow decrease process. This indicates that the device shows one of the important synaptic behaviors, excitatory postsynaptic current (EPSC), to the external gas stimulation.

[0075] FIG. 5 is a CuOx The gas sensing and calculating integrated device is placed in a closed space filled with N2 or other inert gas, and when a pulse of NO2 gas is introduced into the space, a constant +1V voltage is applied between the first metal electrode and the second metal electrode, and the current response state of the device is read. 5ppm, 10ppm, 20ppm, 30ppm, 40ppm and 50ppm of NO2 gas are introduced respectively. When the gas pulse time is the same, the greater the gas concentration, the greater the current of the device, which shows the pulse amplitude response characteristic in the neuromorphic response, corresponding to the pulse amplitude dependent plasticity (SADP) behavior characteristics in the synaptic device.

[0076] FIG. 6 is a CuO x The gas sensing and calculating integrated device is placed in a closed space filled with N2 or other inert gas, and when a pulse of NO2 gas is introduced into the space, a constant +1V voltage is applied between the first metal electrode and the second metal electrode, and the current response state of the device is read. 5ppm, 10ppm, 20ppm, 30ppm, 40ppm and 50ppm of NO2 gas are introduced respectively. When the gas pulse time is the same, the greater the gas concentration, the greater the current of the device, which shows the pulse amplitude response characteristic in the neuromorphic response, corresponding to the pulse amplitude dependent plasticity (SADP) behavior characteristics in the synaptic device.

[0077] In summary, compared with the prior art, the present application has the following advantages:

[0078] The present application provides a gas sensing and calculating integrated device and a preparation method thereof, wherein the first functional layer adopts heavily doped p-type silicon or heavily doped n-type silicon; the second functional layer adopts CuO x The device has a simple preparation process and can realize electro-resistance change under direct current voltage scanning. The device can realize neuromorphic current response to gas pulse signals under gas pulse excitation, including pulse amplitude dependent characteristics and pulse frequency dependent characteristics, and has a gas sensing and calculating integrated function. Based on the above structural arrangement, compared with existing gas sensing and calculating integrated devices, the present application has a simpler structure and a simpler preparation process. Since the device can realize neuromorphic response to gas pulse signals, the device has a simpler calculation process and is expected to be used in an in-situ gas sensing and calculating system to realize more complex tasks.

[0079] It should be understood that expressions such as "include" and "may include" used in the present application indicate the presence of the disclosed functions, operations or constituent elements, and do not limit one or more additional functions, operations and constituent elements.

[0080] In the description of the embodiments of the present application, it should be noted that unless specifically stated and limited otherwise, the term "connected" should be interpreted broadly

[0081] The above description is merely a specific implementation of the present application, but the protection scope of the present application is not limited thereto, any person skilled in the art can easily think of changes or replacements within the technical range disclosed by the present application, which should be covered within the protection scope of the present application. Therefore, the protection scope of the present application should be subject to the protection scope of the claims.

Claims

1. A gas sensing and computing integrated synaptic device, characterized in that, The device comprises: a first functional layer, a barrier layer, a second functional layer, a first metal electrode and a second metal electrode; the second functional layer is divided into a first part of the second functional layer and a second part of the second functional layer; the barrier layer is located between the first functional layer and the first part of the second functional layer, and the second metal electrode is located above the first part of the functional layer; the second part of the second functional layer is located above the first functional layer, and the first metal electrode is also located above the first functional layer; The first functional layer is heavily doped silicon, and the second functional layer is CuO x Material, so that there are gap oxygen and copper vacancy formation defect levels; the barrier layer is used to lift the first part of the second functional layer to increase the contact area of the second functional layer with the test gas; the first metal electrode forms an ohmic contact with the first functional layer; the second metal electrode forms an ohmic contact with the second functional layer; a direct current voltage scan is applied between the first metal electrode and the second metal electrode to simulate the resistive switching behavior of the memristor; the second functional layer is used to react with the test gas to realize the sensing function of the test gas; when a constant voltage signal is applied between the first metal electrode and the second metal electrode, the current response state presents a synaptic response in a gas pulse environment; and 0.5≤x≤2.

2. The gas sensing integrated synaptic device of claim 1, wherein, The impurities doped in the first functional layer are one or more of B, Ga, In, P, As and Sb.

3. The gas sensing integrated synapse device according to claim 1 or 2, wherein The first metal electrode and the second metal electrode are one of Pt, Al, Ti, W, Ag, TiN or Cu; and the barrier layer is one of SiO2, Si3N4, Al2O3, HfO2 or Ta2O5.

4. The gas sensing integrated transistor device according to claim 3, wherein, The thickness of the first functional layer is 3nm-10um, the thickness of the barrier layer is 3nm-500nm, the thickness of the second functional layer is 3nm-500nm, and the thickness of the first and second metal electrodes is 3nm-200nm.

5. The gas sensing integrated transistor device of claim 1, wherein, The test gas comprises an oxidizing gas or a reducing gas; the oxidizing gas comprises O2, SO2, NO2 or H2S; and the reducing gas comprises H2 or CO.

6. The gas sensing integrated transistor device of claim 1, wherein, The synaptic response comprises excitatory postsynaptic current, pulse amplitude-dependent plasticity, double-pulse alienation and pulse frequency-dependent plasticity.

7. A method for a synaptic response of a gas sensing integrated synapse device according to claim 1, characterized by, The device comprises the following steps: The gas sensing integrated synapse device is placed in a sealed space filled with N2 or inert gas, test gas pulses are introduced into the sealed space, a constant voltage is applied between the first metal electrode and the second metal electrode, and the current response state of the gas sensing integrated synapse device is read; The change of the current response state with the increase of the test gas pulse time is analyzed to obtain the sensing characteristics of the gas sensing integrated synapse device for the test gas.

8. A method for a synaptic response of a gas sensing integrated synapse device according to claim 1, characterized by, Specifically: The gas sensing integrated synapse device is placed in a sealed space filled with N2 or inert gas, and when test gas pulses are introduced into the sealed space, the current response state is analyzed with the increase of the test gas concentration under the condition that the test gas pulse time is the same to obtain the pulse amplitude response characteristics in the neuromorphic response.

9. A method for a synaptic response of a gas sensing integrated synapse device according to claim 1, characterized by, Specifically: The gas sensing integrated synapse device is placed in a sealed space filled with N2 or inert gas, and continuous multiple test gas pulses are introduced into the sealed space, and the current response state is analyzed with the shortening of the test gas pulse interval to obtain the pulse frequency response characteristics in the neuromorphic response.

10. A method for manufacturing a gas sensing integrated synapse device according to claim 1, characterized by, Specifically comprising the following steps: S1: preparing a doped Si layer and performing planarization treatment to obtain a first functional layer; S2: preparing a patterned mask layer of the barrier layer on the first functional layer; S3: preparing the barrier layer on the patterned mask layer of the barrier layer and stripping the mask layer to form the barrier layer; S4: preparing a patterned mask layer of the second functional layer on the barrier layer; S5: preparing the second functional layer on the patterned mask layer of the second functional layer and stripping the mask layer to form the second functional layer; S6: preparing a patterned mask layer of the first metal electrode and the second metal electrode on the first functional layer and the second functional layer respectively; S7: preparing the first metal electrode and the second metal electrode on the patterned mask layer of the first metal electrode and the second metal electrode and stripping the mask layer to form the first metal electrode and the second metal electrode, completing the preparation of the gas sensing integrated device; The preparation method of the first metal electrode, the barrier layer, the second functional layer and the second metal electrode is one of sputtering, physical vapor deposition, chemical vapor deposition, molecular beam epitaxy and electrochemical method.

Images