Method for forming protective film and method for manufacturing semiconductor device

Abstract

According to the present invention, a highly functional and thinned protective film is formed for the purpose of preventing diffusion from metal wiring in a semiconductor device and suppressing surface oxidation. This method for forming a protective film in a semiconductor device comprises: a step for forming a waterproof film; and a step for forming a diffusion prevention film by using a two-dimensional material thin film, wherein the protective film is configured such that the waterproof film and the diffusion prevention film are laminated adjacent to each other. A highly functional and thinned protective film is formed for the purpose of preventing diffusion from metal wiring in a semiconductor device and suppressing surface oxidation.

Description

Method for forming protective film and semiconductor device manufacturing apparatus

[0001] The present disclosure relates to a method for forming a protective film used in a semiconductor device and an apparatus for manufacturing the semiconductor device.

[0002] Patent Document 1 discloses a technique for forming an insulating film that functions as a copper diffusion barrier film in an insulating film between wiring layers of a semiconductor device. Patent Document 1 aims to reduce the dielectric constant of the insulating film to solve the problem of signal delay caused by a reduction in wiring pitch and an increase in wiring resistance and capacitance of the interlayer insulating film as semiconductor integrated circuits become more highly integrated. When a copper diffusion barrier film is subjected to a low-dielectric treatment, the film density decreases, impairing its diffusion barrier performance. Patent Document 1 achieves a low dielectric constant while maintaining the film density so as to maintain the copper diffusion barrier performance.

[0003] Japanese Patent Application Publication No. 2007-48811

[0004] The technology according to the present disclosure forms a highly functional and thin protective film for the purpose of preventing diffusion from metal wiring in semiconductor devices and suppressing surface oxidation.

[0005] One aspect of the present disclosure is a method for forming a protective film in a semiconductor device, the protective film being configured by stacking a waterproof film and a diffusion-preventing film adjacent to each other, and including a step of forming the waterproof film and a step of forming the diffusion-preventing film from a two-dimensional material thin film.

[0006] It is possible to form a highly functional, thin protective film to prevent diffusion from metal wiring in semiconductor devices and suppress surface oxidation.

[0007] FIG. 1 is a plan view showing an outline of the configuration of a wafer processing apparatus according to the present embodiment; FIG. 2 is a schematic cross-sectional view showing an example of the configuration of a metal wiring structure; FIG. 3 is a schematic cross-sectional view showing an example of the configuration of a protective film; FIG. 4 is a schematic cross-sectional view showing an example of the configuration of a protective film; FIG. 5 is an explanatory view showing an example of a method for forming a protective film; FIG. 6 is an explanatory view showing an example of a method for forming a protective film; FIG. 7 is an explanatory view showing an example of a method for forming a protective film.

[0008] In the manufacturing process of semiconductor devices, the trend toward higher integration and miniaturization requires thinner protective films, such as liner films and capping films, which are used adjacent to metal wiring. However, there are concerns that the barrier and capping properties of protective films may decline as they become thinner.

[0009] The technology disclosed herein has been developed in consideration of the above circumstances, and provides a highly functional, thin protective film that is a continuous layered film with no gaps, improving barrier and capping performance. Hereinafter, a wafer processing apparatus serving as a substrate processing apparatus for manufacturing semiconductor devices according to this embodiment and a method for forming a protective film used in semiconductor devices will be described with reference to the drawings. Note that in this specification and the drawings, elements having substantially the same functional configuration are designated by the same reference numerals, and redundant description will be omitted.

[0010] <Wafer Processing Apparatus> First, a wafer processing apparatus according to this embodiment will be described. Fig. 1 is a plan view showing an outline of the configuration of a wafer processing apparatus 1 according to this embodiment. The wafer processing apparatus 1 performs processes such as etching, film formation, and heat treatment (annealing) on ​​a wafer W as a substrate.

[0011] 1, the wafer processing apparatus 1 has a configuration in which an atmospheric section 10 and a reduced pressure section 11 are integrally connected via load lock modules 20 and 21. The atmospheric section 10 includes an atmospheric module that performs a desired process on a wafer W in an atmospheric pressure atmosphere. The reduced pressure section 11 includes a reduced pressure module that performs a desired process on a wafer W in a reduced pressure atmosphere.

[0012] The load lock modules 20, 21 are provided to connect a loader module 30 (described later) in the atmospheric section 10 to a transfer module 50 (described later) in the reduced pressure section 11 via a gate valve (not shown). The load lock modules 20, 21 are configured to temporarily hold a wafer W. The load lock modules 20, 21 are also configured so that the interior thereof can be switched between an atmospheric pressure atmosphere and a reduced pressure atmosphere (vacuum state).

[0013] The atmospheric section 10 has a loader module 30 equipped with a wafer transfer mechanism 40 (described later), and a load port 32 on which a FOUP 31 capable of storing a plurality of wafers W is placed. Note that an orienter module (not shown) for adjusting the horizontal orientation of the wafer W, a storage module (not shown) for storing a plurality of wafers W, and the like may be provided adjacent to the loader module 30.

[0014] The loader module 30 is made up of a rectangular housing, and the interior of the housing is maintained at atmospheric pressure. A plurality of, for example, five load ports 32 are arranged side by side on one side that constitutes the long side of the housing of the loader module 30. The load lock modules 20 and 21 are arranged side by side on the other side that constitutes the long side of the housing of the loader module 30.

[0015] A wafer transfer mechanism 40 for transferring a wafer W is provided inside the loader module 30. The wafer transfer mechanism 40 includes a transfer arm 41 that holds and moves the wafer W, a rotary table 42 that rotatably supports the transfer arm 41, and a rotary table 43 on which the rotary table 42 is mounted. Also, a guide rail 44 extending in the longitudinal direction of the loader module 30 is provided inside the loader module 30. The rotary table 43 is provided on the guide rail 44, and the wafer transfer mechanism 40 is configured to be movable along the guide rail 44.

[0016] The decompression unit 11 has a transfer module 50 that simultaneously transfers wafers W, and a processing module 60 that performs desired processing on the wafers W transferred from the transfer module 50. The interiors of the transfer module 50 and the processing module 60 are each maintained in a reduced pressure atmosphere. A plurality of processing modules 60, for example, six processing modules 60, are provided for one transfer module 50. In the following description, the six processing modules 60 may be referred to as processing modules 60a to 60f, respectively. Note that the number and arrangement of the processing modules 60 are not limited to those in this embodiment and can be set as desired.

[0017] The transfer module 50 is made of a housing having a polygonal interior (pentagonal in the illustrated example), and as described above, is connected to the load lock modules 20 and 21. The transfer module 50 transfers the wafer W loaded into the load lock module 20 to one of the processing modules 60, where the wafer W is subjected to the desired processing, and then transfers the wafer W to the atmospheric section 10 via the load lock module 21.

[0018] The processing modules 60 perform processes such as etching, film formation, and heat treatment. The processing modules 60 can be arbitrarily selected to perform processes according to the purpose of wafer processing. The processing modules 60 are connected to the transfer module 50 via gate valves 61. In the following description, the six gate valves 61 may be referred to as gate valves 61a to 61f for the processing modules 60a to 60f, respectively.

[0019] A wafer transfer mechanism 70 for transferring a wafer W is provided inside the transfer module 50. The wafer transfer mechanism 70 includes a transfer arm 71 that holds and moves the wafer W, a rotary table 72 that rotatably supports the transfer arm 71, and a rotary table 73 on which the rotary table 72 is mounted. Also, a guide rail 74 extending in the longitudinal direction of the transfer module 50 is provided inside the transfer module 50. The rotary table 73 is provided on the guide rail 74, and the wafer transfer mechanism 70 is configured to be movable along the guide rail 74.

[0020] In the transfer module 50, the transfer arm 71 receives the wafer W held in the load lock module 20 and transfers it to the processing module 60. The transfer arm 71 also holds the wafer W that has been subjected to the desired processing and transfers it to the load lock module 21.

[0021] Next, wafer processing performed using the wafer processing apparatus 1 configured as above will be described.

[0022] First, the FOUP 31 containing a plurality of wafers W is placed on the load port 32 .

[0023] Next, the wafer W is removed from the FOUP 31 by the wafer transfer mechanism 40 and loaded into the load lock module 20. Once the wafer W is loaded into the load lock module 20, the inside of the load lock module 20 is sealed and depressurized. Thereafter, the inside of the load lock module 20 and the inside of the transfer module 50 are connected to each other.

[0024] Next, the wafer W is held by the wafer transfer mechanism 70 and transferred from the load lock module 20 to the transfer module 50 .

[0025] Next, the gate valve 61 is opened, and the wafer W is loaded into the processing module 60 by the wafer transfer mechanism 70. Thereafter, the gate valve 61 is closed, and the desired processing is performed on the wafer W in the processing module 60. An example of the processing performed on the wafer W will be described later.

[0026] Next, the gate valve 61 is opened, and the wafer W is unloaded from the processing module 60 by the wafer transfer mechanism 70. Thereafter, the gate valve 61 is closed.

[0027] Next, the wafer W is loaded into the load lock module 21 by the wafer transfer mechanism 70. When the wafer W is loaded into the load lock module 21, the inside of the load lock module 21 is sealed and opened to the atmosphere. Thereafter, the inside of the load lock module 21 and the inside of the loader module 30 are connected to each other.

[0028] Next, the wafer W is held by the wafer transfer mechanism 40, and is returned from the load lock module 21 to the FOUP 31 via the loader module 30 and accommodated therein. In this way, a series of wafer processing steps in the wafer processing apparatus 1 is completed.

[0029] 2 is a schematic cross-sectional view showing an example of the configuration of a metal wiring structure 100 that uses the protective film according to this embodiment as a liner film and a cap film. The metal wiring structure 100 includes an interlayer insulating film 105 having a low dielectric constant and provided on a wafer W, a metal wiring layer 210 that is provided by etching the interlayer insulating film 105 to form pattern grooves and disposing metal in the grooves, a liner film 220 that serves as a diffusion prevention film and is formed to cover the periphery of the metal wiring layer 210 except for its upper surface, and a cap film 230 that serves as a waterproof film and is formed to cover the upper surface of the entire structure including the metal wiring layer 210.

[0030] Specific examples of materials for the metal wiring layer 210 include metals such as Cu and Ru. For example, when the metal wiring layer 210 is made of Cu, the liner film 220 functions to prevent the diffusion of Cu, and the cap film 230 has the function of reducing the water permeability to prevent the surface oxidation of Cu.

[0031] When the metal wiring layer 210 is a Cu wiring, conventionally, for example, TaN, Ta, TiN, or the like has been used as the liner film 220. Conventionally, for example, SiC-based materials, AlN, or the like has been used as the cap film 230. Such conventional liner films and cap films have a thickness of, for example, about 5 nm.

[0032] In recent years, there has been a demand for higher integration and miniaturization of semiconductor devices, and this has led to a demand for thinner liner and cap films for metal wiring. For example, protective films with a thickness of 2 nm or less that have water penetration prevention and metal diffusion prevention functions equivalent to or better than conventional protective films are required.

[0033] <Configuration of Protective Film> FIGS. 3 and 4 are schematic cross-sectional views showing an example of the configuration of a protective film 300 according to this embodiment. As shown in FIG. 3 , the protective film 300 may include an upper layer of a diffusion barrier film 310 made of a two-dimensional material thin film and a lower layer of a waterproof film 320 made of any of a transition metal nitride film, a transition metal carbide film, and a transition metal carbonitride film. Alternatively, as shown in FIG. 4 , the protective film 300 may include an upper layer of a waterproof film 320 made of any of a transition metal nitride film, a transition metal carbide film, and a transition metal carbonitride film and a lower layer of a diffusion barrier film 310 made of a two-dimensional material thin film. That is, the protective film 300 may be configured such that the diffusion barrier film 310 and the waterproof film 320 are stacked adjacent to each other. Such a protective film 300 may be used as the liner film 220 or the cap film 230 of the metal wiring structure 100 described above.

[0034] The material of the diffusion barrier film 310 may be any two-dimensional material containing a transition metal such as Mo or W, for example, MoS ２ , MoSe ２ , W.S. ２ The diffusion barrier film 310 may be formed by any method, such as physical vapor deposition (PVD), chemical vapor deposition (CVD), or atomic layer deposition (ALD). As will be described later, the diffusion barrier film 310 may be formed by first depositing a transition metal-containing film containing a transition metal such as Mo or W, and then annealing the transition metal-containing film in a chalcogen atmosphere using a chalcogen source.

[0035] The material of the transition metal-containing film may be any material containing a transition metal such as Mo or W, and may be an oxide containing Mo or W, or a nitride containing Mo or W, for example, MoO ３ , Mo ２ N.W. ２ O ３, WN. The conditions for the annealing process in the chalcogen atmosphere are not particularly limited. For example, in a module that performs the annealing process among the multiple process modules 60, the inside of a process chamber into which the target wafer W is loaded may be purged with Ar, and a chalcogen source may be continuously supplied from the start of temperature rise to perform the annealing process. The chalcogen source may be any material, and may be, for example, a material containing sulfur (S), selenium (Se), or tellurium (Te) as the chalcogen. Specifically, H ２ S, H ２ Se, H ２ Te is an example.

[0036] The material of the waterproof film 320 is not particularly limited, and may be any film that can be formed on a two-dimensional material thin film and can effectively prevent water penetration. For example, the waterproof film 320 may be a transition metal nitride film, a transition metal carbide film, or a transition metal carbonitride film, such as MoN, MoCN, or AlN. The waterproof film 320 may be formed by any method, including physical vapor deposition (PVD), chemical vapor deposition (CVD), and atomic layer deposition (ALD).

[0037] <Example of a method for forming a protective film> The protective film 300 is formed, for example, by the wafer processing apparatus 1 described above with reference to Fig. 1. Any processing module 60 may be used to form the protective film 300, and a series of steps may be performed in different processing modules 60 or in the same processing module 60. An example of a method for forming the protective film 300 will be described below with reference to the drawings.

[0038] FIG. 5 is an explanatory diagram showing an example of a method for forming the protective film 300 according to this embodiment, and shows a method using atomic layer deposition (ALD).

[0039] First, as shown in FIG. 5A, a wafer W, which is, for example, a Si substrate, is placed in a processing module 60 in which a precursor, for example, Mo, Mo(CO), ６ , MoO ２ Cl ２5B, a rare gas such as Ar gas is supplied as a purge gas. Then, as shown in FIG. 5C, a rare gas such as N ２ , N ２ and H ２ Combination of CH ４ A gas containing nitrogen or carbon, such as nitrogen or carbon, is supplied. As a result, the inside of the processing module 60 is placed in a gas atmosphere containing nitrogen and / or carbon. In this state, the transition metal reacts with the nitrogen or carbon to form a film such as a transition metal nitride film, a transition metal carbide film, or a transition metal carbonitride film. As a specific example, Mo is reacted with N to be nitrided, thereby forming the MoN film 340.

[0040] Next, as shown in FIG. 5(d), a rare gas such as Ar gas is supplied into the processing module 60 as a purge gas. Then, as shown in FIG. 5(e), the surface layer of a film (MoN film 340) such as a transition metal nitride film, a transition metal carbide film, or a transition metal carbonitride film is chalcogenized. The method of chalcogenization is not particularly limited, and examples thereof include annealing, plasma processing, and ultraviolet irradiation processing. As an example, a chalcogen source is continuously supplied into the processing module 60 from the start of temperature increase, and the annealing processing is performed. The conditions for the annealing processing in a chalcogen atmosphere are not particularly limited. For example, in the processing module 60 where the annealing processing is performed, the processing chamber into which the target wafer W is loaded is purged with Ar, and the chalcogen source is continuously supplied from the start of temperature increase, and the annealing processing is performed. As an example, the annealing processing may be performed under atmospheric pressure, using Ar as a diluent gas, with a partial pressure of the chalcogen source of approximately 1%, and a temperature of 800°C.

[0041] This annealing treatment is carried out so as to chalcogenize the surface layer of a film such as a transition metal nitride film, a transition metal carbide film, or a transition metal carbonitride film. The annealing treatment is preferably carried out so as to form, for example, two to three layers of chalcogenized layered films on the surface layer of a film such as a transition metal nitride film, a transition metal carbide film, or a transition metal carbonitride film. For example, in a state where the MoN film 340 has been formed, MoS is formed on the surface layer as two to three layered films. ２An annealing process may be performed to form film 342 .

[0042] As described above, the protective film 300 formed as shown in FIG. 5 has a chalcogenated layer film (e.g., MoS ２ The chalcogenized layered film on the surface has a high anti-diffusion function and functions as the anti-diffusion film 310, while the transition metal nitride film, transition metal carbide film, or transition metal carbonitride film on the lower layer has a high anti-water permeability function and functions as the waterproof film 320.

[0043] 6A and 6B are explanatory diagrams showing an example of another forming method using atomic layer deposition (ALD). First, as shown in FIG. 6A, a two-dimensional material thin film (e.g., MoS) is formed on a wafer W, which is, for example, a Si substrate. ２ 6B, a film such as a transition metal nitride film, a transition metal carbide film, or a transition metal carbonitride film (e.g., a MoN film 340) is formed on the two-dimensional material thin film. By this method, a protective film 300 having a two-layer structure is formed, which has a film such as a transition metal nitride film, a transition metal carbide film, or a transition metal carbonitride film as an upper layer and a two-dimensional material thin film as a lower layer.

[0044] 6, the upper layer of the protective film 300, such as a transition metal nitride film, a transition metal carbide film, or a transition metal carbonitride film, has a high water-permeability preventing function and functions as a waterproof film 320, and the lower layer of the two-dimensional material thin film has a high diffusion preventing function and functions as a diffusion preventing film 310. When the protective film 300 is formed as a two-layer structure, the upper and lower layers do not necessarily have to be formed in the order shown in FIG. 6; the upper layer may be a two-dimensional material thin film, and the lower layer may be a film such as a transition metal nitride film, a transition metal carbide film, or a transition metal carbonitride film.

[0045] 7A and 7B are explanatory diagrams showing an example of a method for forming a protective film 300 using physical vapor deposition (PVD) or chemical vapor deposition (CVD). First, as shown in FIG. 7A, a film such as a transition metal nitride film, a transition metal carbide film, or a transition metal carbonitride film (e.g., a MoN film 340) is directly formed on a wafer W, e.g., a Si substrate. Then, as shown in FIG. 7B, the processing module 60 is purged with Ar, and the surface layer of the film such as the transition metal nitride film, the transition metal carbide film, or the transition metal carbonitride film is chalcogenized. The method for chalcogenization is not particularly limited, and examples thereof include annealing, plasma treatment, and ultraviolet irradiation treatment.

[0046] As shown in FIG. 7C, a chalcogenated layered film (e.g., MoS) is formed on the surface (upper) layer. ２ The chalcogenized layered film on the surface has a high anti-diffusion function and functions as the anti-diffusion film 310, while the transition metal nitride film, transition metal carbide film, or transition metal carbonitride film on the lower layer has a high anti-water permeability function and functions as the waterproof film 320.

[0047] 8A and 8B are explanatory diagrams showing an example of another forming method when using physical vapor deposition (PVD) or chemical vapor deposition (CVD). First, as shown in FIG. 8A, a two-dimensional material thin film (e.g., MoS) is formed on a wafer W, which is, for example, a Si substrate. ２ 8B, a film such as a transition metal nitride film, a transition metal carbide film, or a transition metal carbonitride film (e.g., a MoN film 340) is formed on the two-dimensional material thin film. By this method, a protective film 300 having a two-layer structure is formed, which has a film such as a transition metal nitride film, a transition metal carbide film, or a transition metal carbonitride film as an upper layer and a two-dimensional material thin film as a lower layer.

[0048] 5 to 8, the protective film 300 has a two-layer structure in which the diffusion prevention film 310 and the waterproof film 320 are adjacent to each other. The diffusion prevention film 310 is made of, for example, MoS ２The waterproof membrane 320 is formed of a two-dimensional material thin film such as the membrane 342, and the waterproof membrane 320 is formed of a transition metal nitride film, a transition metal carbide film, or a transition metal carbonitride film such as the MoN membrane 340. This makes it possible to achieve both a metal diffusion prevention function and a high water penetration prevention function.

[0049] <Effects of the Technique of the Present Disclosure> As described above, the protective film 300 and the method for forming the same according to the technique of the present disclosure use elements such as Mo and W, which have larger atomic radii than the metal elements used in conventional protective films. This improves the metal diffusion prevention function. In addition, the diffusion prevention film 310 can be formed by using a two-dimensional material thin film (e.g., MoS) that is a layered film of two to three layers. ２ This allows the film to be made thinner without reducing the diffusion prevention function.

[0050] Furthermore, the protective film 300 has a two-layer structure in which the diffusion prevention film 310 and the waterproof film 320 are adjacent to each other. This allows for both metal diffusion prevention and high water penetration prevention. In particular, as shown in FIG. 2 , by applying the protective film 300 as the liner film 220 or cap film 230 used in the metal wiring structure 100, a structure suitable for high integration and miniaturization of semiconductor devices is realized. Specifically, the metal wiring structure 100 can be constructed using the protective film 300, which is 2 nm or less thick and has water penetration prevention and metal diffusion prevention functions equivalent to or better than conventional protective films.

[0051] Furthermore, in the method of forming the protective film 300, a technique may be employed in which the surface layer of a film such as a transition metal nitride film, a transition metal carbide film, or a transition metal carbonitride film (MoN film 340) is chalcogenized to form a layered film of two or three layers. This allows the diffusion barrier film 310 to be formed efficiently, and the efficiency of manufacturing costs and manufacturing time can be improved.

[0052] In the above description, the wafer processing apparatus 1 can perform various processes such as film formation, etching, and annealing on the wafer W. In this case, a plurality of processing modules 60 may be used, each performing a different process, or a plurality of processes may be performed in the same module.

[0053] The embodiments disclosed herein should be considered to be illustrative in all respects and not restrictive. The above-described embodiments may be omitted, substituted, or modified in various ways without departing from the scope and spirit of the appended claims. For example, the components of the above-described embodiments may be arbitrarily combined. Such an arbitrary combination naturally provides the functions and effects of each of the components involved in the combination, and also provides other functions and effects that are apparent to those skilled in the art from the description of this specification.

[0054] Furthermore, the effects described herein are merely descriptive or exemplary and are not limiting. In other words, the technology according to the present disclosure may achieve other effects that are apparent to those skilled in the art from the description of this specification, in addition to or in place of the above-described effects.

[0055] The following configuration examples also fall within the technical scope of the present disclosure. (1) A method for forming a protective film for a semiconductor device, wherein the protective film is configured by stacking a waterproof film and a diffusion barrier film adjacent to each other, the method comprising: forming the waterproof film; and forming the diffusion barrier film from a two-dimensional material thin film. (2) The method for forming a protective film according to (1), wherein the waterproof film is formed from any one of a transition metal nitride film, a transition metal carbide film, and a transition metal carbonitride film. (3) The method for forming a protective film according to (1) or (2), wherein the waterproof film forming step and the diffusion barrier film forming step are performed consecutively in the same module under reduced pressure. (4) The method for forming a protective film according to any one of (1) to (3), wherein the waterproof film forming step and the diffusion barrier film forming step are performed by one or more methods selected from or combined with a physical vapor deposition method, a chemical vapor deposition method, and an atomic layer deposition method. (5) The method for forming a protective film according to (2), wherein the steps of forming the waterproof film and the diffusion barrier film include forming one of a transition metal nitride film, a transition metal carbide film, and a transition metal carbonitride film, and then annealing the surface layer of the film in a chalcogen atmosphere using a chalcogen source, so that the waterproof film and the diffusion barrier film are stacked adjacent to each other. (6) The method for forming a protective film according to any of (1) to (5), wherein the waterproof film is formed of a nitride film, a carbide film, or a carbonitride film containing Mo or W. (7) The method for forming a protective film according to any of (1) to (6), wherein the two-dimensional material thin film is formed by annealing a transition metal-containing film in a chalcogen atmosphere using a chalcogen source. (8) The method for forming a protective film according to (7), wherein the transition metal-containing film is formed of an oxide containing Mo or W or a nitride containing Mo or W. (9) The method for forming a protective film according to (7) or (8), wherein the chalcogen raw material is a material containing S, Se, or Te. (10) The method for forming a protective film according to any one of (1) to (9), wherein the semiconductor device includes a metal wiring structure, and the protective film is formed so as to cover the entire upper surface of the metal wiring structure including an upper surface of a metal wiring layer of the metal wiring structure, and to cover the periphery excluding the upper surface of the metal wiring layer of the metal wiring structure.(11) The method for forming a protective film according to any one of (1) to (10), wherein the protective film is configured to have a thickness of 2 nm or less. (12) An apparatus for manufacturing a semiconductor device, comprising: a module for forming a transition metal-containing film by one or more methods selected from or combined with a physical vapor deposition method, a chemical vapor deposition method, and an atomic layer deposition method, and further comprising at least one of a module for performing an annealing treatment on the transition metal-containing film in a chalcogen atmosphere using a chalcogen source, and a module for forming a two-dimensional material thin film.

[0056] 300 Protective film 310 Diffusion prevention film 320 Waterproof film

Claims

1. A method for forming a protective film in a semiconductor device, wherein the protective film is configured by stacking a waterproof film and a diffusion prevention film adjacent to each other, the method comprising: forming the waterproof film; and forming the diffusion prevention film from a two-dimensional material thin film.

2. The method for forming a protective film according to claim 1, wherein the waterproof film is formed from one of a transition metal nitride film, a transition metal carbide film, and a transition metal carbonitride film.

3. The method for forming a protective film according to claim 1 or 2, wherein the step of forming the waterproof film and the step of forming the diffusion-preventing film are carried out consecutively in the same module under reduced pressure.

4. The method for forming a protective film according to claim 1 or 2, wherein the step of forming the waterproof film and the step of forming the diffusion barrier film are carried out by one or more methods selected from or combined with physical vapor deposition, chemical vapor deposition, and atomic layer deposition.

5. A method for forming a protective film according to claim 2, wherein in the step of forming the waterproof film and the step of forming the diffusion barrier film, after forming any one of a transition metal nitride film, a transition metal carbide film, and a transition metal carbonitride film, the surface layer is annealed in a chalcogen atmosphere using a chalcogen raw material, so that the waterproof film and the diffusion barrier film are laminated adjacent to each other.

6. The method for forming a protective film according to claim 1, wherein the waterproof film is formed from a nitride film, a carbide film, or a carbonitride film containing Mo or W.

7. The method for forming a protective film according to claim 1, wherein the two-dimensional material thin film is formed by annealing a transition metal-containing film in a chalcogen atmosphere using a chalcogen raw material.

8. The method for forming a protective film according to claim 7, wherein the transition metal-containing film is formed of an oxide containing Mo or W or a nitride containing Mo or W.

9. The method for forming a protective film according to claim 7 or 8, wherein the chalcogen raw material is a material containing S, Se, or Te.

10. The method for forming a protective film according to claim 1, wherein the semiconductor device includes a metal wiring structure, and the protective film is formed so as to cover the entire upper surface of the metal wiring structure, including the upper surface of the metal wiring layer of the metal wiring structure, and so as to cover the periphery excluding the upper surface of the metal wiring layer of the metal wiring structure.

11. The method for forming a protective film according to claim 1, wherein the protective film is configured to have a thickness of 2 nm or less.

12. A semiconductor device manufacturing apparatus comprising: a module for forming a transition metal-containing film by one or more methods selected from or combined with a physical vapor deposition method, a chemical vapor deposition method, and an atomic layer deposition method; and further comprising at least one of a module for annealing the transition metal-containing film in a chalcogen atmosphere using a chalcogen source; and a module for forming a two-dimensional material thin film.

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