Optoelectronic semiconductor device and method for producing a plurality of optoelectronic semiconductor devices

Abstract

An optoelectronic semiconductor device (10) is specified, which comprises - a substrate element (1), - a semiconductor layer sequence (2) arranged on the substrate element (1), wherein the semiconductor layer sequence (2) has a radiation transmission surface (2A) and side surfaces (2B), and - a wavelength conversion layer (3) applied to the radiation transmission surface (2A) without covering the side surfaces (2B), wherein the wavelength conversion layer (3) comprises a sediment layer of phosphor material (31) and a first matrix material (32) covering the phosphor material (31). For example, the optoelectronic semiconductor device is a micro-LED. Moreover, a method for producing a plurality of optoelectronic semiconductor devices (10) is specified.

Description

[0001] 2024PF00526 July 17 , 2025

[0002] P2024 , 0465 WO N

[0003] 1

[0004] Description

[0005] OPTOELECTRONIC SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING A PLURALITY OF OPTOELECTRONIC SEMICONDUCTOR DEVICES

[0006] An optoelectronic semiconductor device and a method for producing a plurality of optoelectronic semiconductor devices are speci fied . For example , the optoelectronic semiconductor device is suited for emitting electromagnetic radiation, for example radiation having di f ferent spectral components due to wavelength conversion . The optoelectronic semiconductor device may be suited for emitting white light .

[0007] A possible approach for fabricating optoelectronic semiconductor devices suited for wavelength conversion is to produce ceramic wavelength conversion layers at radiationemitting surfaces of the optoelectronic semiconductor devices by means of a doctor blade process , which may require two steps of grinding . However, grinding of a ceramic wavelength conversion material , which is a comparatively hard material , inter alia leads to degradation of grinding wheels and is thus expensive . Moreover, it is di f ficult to balance a wavelength conversion composite used for the wavelength conversion layers in the doctor blade process with regard to optimal viscosity, filling grade , reliability, contrast and ef ficiency .

[0008] It is an obj ect of the present application to speci fy an optoelectronic semiconductor device having improved optical characteristics . It is another obj ect of the present application to speci fy a method for producing a plurality of optoelectronic semiconductor devices having improved optical characteristics . 2024PF00526 July 17 , 2025

[0009] P2024 , 0465 WO N

[0010] 2

[0011] These obj ects are achieved inter alia by an optoelectronic semiconductor device and a method for producing a plurality of optoelectronic semiconductor devices having the features of the independent claims .

[0012] Further advantages and configurations of an optoelectronic semiconductor device and of a method for producing a plurality of optoelectronic semiconductor devices are the subj ect matter of the dependent claims .

[0013] According to at least one embodiment of an optoelectronic semiconductor device , it comprises a substrate element and a semiconductor layer sequence arranged on the substrate element . Suitable materials for the substrate element are semiconductor materials , for example silicon . The semiconductor layer sequence may have been epitaxially grown on a growth substrate , which is removed after epitaxial deposition so that the optoelectronic semiconductor device is free of the growth substrate . For example , the optoelectronic semiconductor device is a thin- film component . However, it is also possible for the optoelectronic semiconductor device to be a volume emitter .

[0014] The semiconductor layer sequence may comprise an active zone for generating or emitting primary radiation having a first wavelength or first spectral distribution, for example in the ultraviolet to visible spectral range . Moreover, the semiconductor layer sequence may comprise a first semiconductor region and a second semiconductor region, wherein the active zone is arranged between the first semiconductor region and the second semiconductor region . 2024PF00526 July 17 , 2025

[0015] P2024 , 0465 WO N

[0016] 3

[0017] It is possible for the active zone to comprise a sequence of single layers , wherein the single layer sequence may form a quantum well structure like a single quantum well ( SQW) structure or a multiple quantum well (MQW) structure .

[0018] The first semiconductor region may face the substrate element and can be a region of a first conductivity type , for example of p-conductivity . The second semiconductor region may face away from the substrate element and can be a region of a second conductivity type , for example of n-conductivity . However, it is also possible for the first semiconductor region to be a region of n-conductivity and for the second semiconductor region to be a region of p-conductivity . The first and second semiconductor regions can be single or multilayers in each case .

[0019] The semiconductor layer sequence or at least one of the regions or layers contained in the semiconductor layer sequence can comprise or consist of a compound semiconductor material based on nitride . However, it is also possible for the semiconductor layer sequence or at least one of the regions or layers contained in the semiconductor layer sequence to comprise or consist of a compound semiconductor material based on phosphide or arsenide .

[0020] A compound semiconductor material based on nitride , phosphide or arsenide may denote a material according to the formula AlnGamIni-n-mN, AlnGamIni-n-mP or AlnGamIni-n-mAs where 0 < n < 1 , 0 < m < 1 and n+m < 1 , without necessari ly having a mathematically exact composition according to the above formula . Rather, it may contain one or more dopants and additional components that do not substantially alter the characteristic physical properties of the material . For the sake of simplicity, however, the above formula contains only 2024PF00526 July 17 , 2025

[0021] P2024 , 0465 WO N

[0022] - 4 - the essential components of the crystal lattice (Al , Ga, In, N) , (Al , Ga, In, P ) or (Al , Ga, In, As ) , even i f these can be partially replaced by small amounts of other substances .

[0023] According to at least one embodiment of the optoelectronic semiconductor device , the semiconductor layer sequence has a radiation transmission surface and side surfaces . For example , the side surfaces connect the radiation transmission surface , which may be an upper surface , to a lower surface of the semiconductor layer sequence . While the radiation transmission surface and / or lower surface may extend in lateral directions and essentially parallel to a main extension plane of the optoelectronic semiconductor device , the side surfaces may run obliquely, that is for example at angles greater than 0 ° and smaller than 180 ° , in particular at 90 ° ± 10% , to the radiation transmission surface and / or lower surface or main extension plane .

[0024] According to at least one embodiment of the optoelectronic semiconductor device , it comprises a wavelength conversion layer applied to the radiation transmission surface without covering the side surfaces . In other words , the wavelength conversion layer may cover the radiation transmission surface without extending to the side surfaces . Thus , the semiconductor layer sequence is not laterally surrounded by the wavelength conversion layer .

[0025] According to at least one embodiment of the optoelectronic semiconductor device , the wavelength conversion layer comprises a sediment layer of phosphor material and a first matrix material covering the phosphor material . The first matrix material may cover the phosphor material in interspaces of the phosphor material . The sediment layer is 2024PF00526 July 17 , 2025

[0026] P2024 , 0465 WO N

[0027] 5 produced by sedimentation of phosphor particles and as a consequence has characteristic structural features of sedimentation like , for example , a high density or filling grade , which results in better contact among the phosphor particles and between the wavelength conversion layer and the radiation transmission surface such that heat dissipation and thus characteristics of the optoelectronic semiconductor device , like optical characteristics and reliability, can be improved . The high density or filling grade , and possibly a smooth surface , can be achieved by larger phosphor particles of greater diameter sedimenting faster than smaller phosphor particles of smaller diameter, wherein the smaller phosphor particles fill up gaps between the larger phosphor particles . The sediment layer can be a single layer or a multilayer .

[0028] The phosphor material can be a wavelength-converting material , which is configured to convert primary radiation of the active zone into secondary radiation, wherein the secondary radiation may have at least one second wavelength or second spectral distribution di f ferent from the first wavelength or spectral distribution, for example shi fted towards longer wavelengths . Suitable materials for the phosphor material are , for example , quantum dot phosphors , YAG (Yttrium aluminium garnet ) , which can be doped with Ce and / or Gd, white phosphors , amber, green and red phosphors , cyan / mint phosphors and infrared phosphors .

[0029] According to at least one embodiment of an optoelectronic semiconductor device , it comprises :

[0030] - a substrate element ,

[0031] - a semiconductor layer sequence arranged on the substrate element , wherein the semiconductor layer sequence has a radiation transmission surface and side surfaces , and 2024PF00526 July 17 , 2025

[0032] P2024 , 0465 WO N

[0033] - 6 -

[0034] - a wavelength conversion layer applied to the radiation transmission surface without covering the side surfaces , wherein the wavelength conversion layer comprises a sediment layer of phosphor material and a first matrix material covering the phosphor material .

[0035] For example , the wavelength conversion layer or sediment layer is a ceramic layer having properties such as high melting temperature , high hardness , poor conductivity, high modulus of elasticity, chemical resistance and low ductility .

[0036] The wavelength conversion layer may be conformally deposited on the radiation transmission surface . Moreover, the wavelength conversion layer may adhere to the radiation transmission surface without additional connection means like adhesive or bonding means .

[0037] According to at least one embodiment or configuration, a mass fraction of the phosphor material is greater than a mass fraction of the first matrix material . For example , the mass fraction w of the phosphor material ranges from 0 . 6 ± 10% to 0 . 9 ± 10% . The mass fraction w may range from more than 0 . 75 to 0 . 9 . The mass fraction of the first matrix material may have values complementary to the mass fraction of the phosphor material , that is 1-w . The higher mass fraction of the phosphor material can be achieved, for example , by removing a portion of the first matrix material on top of the sediment layer after sedimentation . A reduced portion of the first matrix material has several advantages like better heat dissipation, resulting for example in less color shi ft or forward current degradation during operation, smaller and fewer cracks and reduced thickness of the wavelength conversion layer . These advantages result in improved 2024PF00526 July 17 , 2025

[0038] P2024 , 0465 WO N

[0039] 7 characteristics of the optoelectronic semiconductor device including optical ef ficiency and reliability . For example , the wavelength conversion layer can have a thickness ranging from 30pm ± 10% to 40pm ± 10% .

[0040] According to at least one embodiment or configuration, the first matrix material includes or is a siloxane material like silicone , for example . It is also possible for the first matrix material to include or be an epoxy material .

[0041] According to at least one embodiment or configuration, the wavelength conversion layer is free of singulation traces . The method described herein allows the wavelength conversion layer to be produced as a separate layer without the necessity of singulation from a layer composite .

[0042] According to at least one embodiment or configuration, the optoelectronic semiconductor device comprises a cover material . For example , the cover material is di f ferent from the phosphor material and the first matrix material . The cover material may be arranged on the phosphor material . Moreover, the cover material may be covered by the first matrix material . The first matrix material may cover the cover material in interspaces of the cover material . During production, the cover material , which may comprise particles , can be provided to the first matrix material and can sink into the first matrix material onto the sediment layer . This has the ef fect of absorbing or displacing excessive first matrix material , for example .

[0043] It is possible for the first matrix material and the cover material to have di f ferent refractive indices so that the primary and secondary radiation are scattered . As a result , 2024PF00526 July 17 , 2025

[0044] P2024 , 0465 WO N

[0045] 8 the primary and secondary radiation may be statistically mixed and the optoelectronic semiconductor device can have an essentially uni form color-over-angle distribution . For example , the cover material comprises or consists of glass .

[0046] According to at least one embodiment or configuration, the optoelectronic semiconductor device comprises a reflective element at the side surfaces of the semiconductor layer sequence . Advantageously, the reflective element helps to reduce optical losses and to increase contrast .

[0047] According to at least one embodiment or configuration, at least a part of the wavelength conversion layer is laterally surrounded by the reflective element . For example , in a vertical direction the reflective element may end before a top surface of the wavelength conversion layer or extend to a radiation exit surface of the optoelectronic semiconductor device , which can be the top surface of the wavelength conversion layer or a surface di f ferent from the top surface , wherein the vertical direction runs obliquely, for example perpendicularly, to the lateral directions . For example , the top surface or radiation exit surface faces away from the semiconductor layer sequence . An essential part of the radiation generated by the optoelectronic semiconductor device may be emitted at the radiation exit surface .

[0048] According to at least one embodiment or configuration, the reflective element comprises a sediment layer of reflective material and a second matrix material covering the reflective material . The sediment layer can be produced by sedimentation of reflective particles and as a consequence may have characteristic structural features of sedimentation, like for example a high density or filling grade and possibly a smooth 2024PF00526 July 17 , 2025

[0049] P2024 , 0465 WO N

[0050] 9 surface as explained above . Moreover, a portion of the second matrix material on top of the sediment layer may be removed after sedimentation . This has the advantage that the reflective element can have a small thickness of 10 pm ± 10% , for example .

[0051] The second matrix material can include or be a siloxane material like silicone , for example . It is also possible for the second matrix material to include or be an epoxy material . The second matrix material may cover the reflective material in interspaces of the reflective material . The reflective material and the second matrix material may have di f ferent refractive indices . The reflective material may contain at least one of the following materials : TiO2 , ZrO2 , A12O3 .

[0052] According to at least one embodiment or configuration, the optoelectronic semiconductor device is a micro-LED, which is characteri zed by having a particularly small si ze . For example , the radiation exit surface of the optoelectronic semiconductor device embodied as a micro-LED can have lateral extents which are less than or equal to 100 pm or less than or equal to 70 pm . The lateral extents can be determined along lateral directions running perpendicular to each other .

[0053] A method which is suitable for the production of an optoelectronic semiconductor device of the kind as described above is subsequently described . The features described in connection with the optoelectronic semiconductor device can therefore also apply to the method, and vice versa . 2024PF00526 July 17 , 2025

[0054] P2024 , 0465 WO N

[0055] 10

[0056] According to at least one embodiment of a method for producing a plurality of optoelectronic semiconductor devices , the method comprises the following steps :

[0057] - providing a plurality of semiconductor layer sequences on a substrate body, wherein each of the semiconductor layer sequences has a radiation transmission surface and side surfaces ,

[0058] - providing a frame structure on the substrate body, wherein the frame structure laterally surrounds the plurality of semiconductor layer sequences and comprises a plurality of recesses which are formed on the radiation transmission surfaces ,

[0059] - providing a wavelength conversion composite in the plurality of recesses , wherein the wavelength conversion composite comprises a phosphor material and a first matrix material , and

[0060] - sedimentation of the phosphor material on the radiation transmission surfaces , wherein wavelength conversion layers are formed on the radiation transmission surfaces without covering the side surfaces , wherein each of the wavelength conversion layers comprises a sediment layer of phosphor material and a first matrix material covering the phosphor material .

[0061] The phosphor material or particles may be distributed essentially evenly in the first matrix material before sedimentation . During sedimentation, the phosphor material or particles sink in the first matrix material and settle or sediment at the bottom of the recesses on the radiation transmission surfaces to form sediment layers , while layers of the first matrix material are formed on top of the sediment layers . As mentioned above , a high density or filling grade and possibly a smooth surface of the sediment 2024PF00526 July 17 , 2025

[0062] P2024 , 0465 WO N

[0063] 11 layers are achievable due to the circumstance that larger phosphor particles of greater diameter sediment faster than smaller phosphor particles of smaller diameter, wherein the smaller phosphor particles fill up gaps between the larger phosphor particles . The high density or filling grade results in better contact among the phosphor particles and between the wavelength conversion layers and the radiation transmission surfaces such that heat dissipation and thus characteristics of the optoelectronic semiconductor devices like optical characteristics and reliability can be improved .

[0064] A plurality of substrate elements may be produced from the substrate body, wherein for example one substrate element is assigned to one optoelectronic semiconductor device . Structural and material characteristics revealed in connection with the substrate element may apply to the substrate body as well and vice versa .

[0065] According to at least one embodiment or configuration, the frame structure is formed from a resist material . The resist material can be removed after the production of the wavelength conversion layers . Hence , the optoelectronic semiconductor device can be free of resist material of the frame structure .

[0066] According to at least one embodiment or configuration, the wavelength conversion composite is provided by a casting process including at least one of the following processes : j etting, dispensing . Compared to the above-mentioned doctor blade process that needs a sophisticated wavelength conversion composite balanced inter alia with regard to optimal optical requirements and viscosity, the casting process opens up new freedoms and advantages . 2024PF00526 July 17 , 2025

[0067] P2024 , 0465 WO N

[0068] - 12 -

[0069] For example , during the formation of the wavelength conversion layers , an amount of wavelength conversion composite in the recesses can be corrected or adj usted in such a way that superimposed radiation resulting from the superposition of primary and secondary radiation reaches a predetermined optical value , for example a predetermined chromaticity . For example , an additional amount of the wavelength conversion composite can be provided before sedimentation i f a predetermined optical value has not yet been reached . Alternatively or additionally, an additional amount of the wavelength conversion composite can be provided after sedimentation i f a predetermined optical value has not yet been reached . For example , a relatively high color yield can be achieved this way .

[0070] Moreover, a portion of the first matrix material arranged on the sediment layer can be removed . In other words , the layer of first matrix material formed on top of the sediment layer during sedimentation can be at least partially removed . The removal can be conducted, for example , by an etching process like plasma etching or wet etching . Alternatively, the removal may include diluting and spilling or cleaning, that is providing a dilution to make the first matrix material less viscous and then spilling it away so that the less dilutable portion is left on the sediment layer . The removal has a positive ef fect on heat dissipation, robustness and thickness of the wavelength conversion layer, as mentioned above . I f an additional amount of the wavelength conversion composite is provided, the first matrix material can be removed before application of the additional amount . 2024PF00526 July 17 , 2025

[0071] P2024 , 0465 WO N

[0072] 13

[0073] According to at least one embodiment or configuration, the method comprises measuring primary and / or superimposed radiation assigned to at least one semiconductor layer sequence before and / or during provision of the wavelength conversion composite . The correction or adj ustment of the wavelength conversion composite can be conducted based on the measurement of the radiation . The at least one semiconductor layer sequence can be energi zed by a bond pad arranged on the substrate body . A plurality of bond pads can be arranged on the substrate body for energi zing the plurality of semiconductor layer sequences .

[0074] According to at least one embodiment or configuration, the sedimentation involves a centri fuge process . In particular, the centri fuge process is conducted before solidi fication of the wavelength conversion composite occurs . For example , the centri fuge process includes spinning the arrangement of the substrate body, the frame structure and the wavelength conversion composite around a vertical axis , for example a vertical center axis of the arrangement .

[0075] According to at least one embodiment or configuration, the method comprises providing a cover material in the plurality of recesses after sedimentation, wherein the cover material sinks into the first matrix material . Excessive first matrix material can be absorbed or displaced by the cover material or particles and removed from the recesses . After curing, the first matrix material and the cover material may form a compound, which is harder than the first matrix material , but softer than the sediment layer . Thus , a thinning or grinding process can be conducted more easily and cheaply than in the case of the doctor blade related process including grinding of the ceramic wavelength conversion layer . By thinning or 2024PF00526 July 17 , 2025

[0076] P2024 , 0465 WO N

[0077] - 14 - grinding the compound, the layer on top of the radiation transmission surface , which includes the wavelength conversion layer, can be formed with a reproducible thickness .

[0078] Given the correction or adj ustment possibilities mentioned above , a starting composition of the wavelength conversion composite is less crucial for a good quality of the wavelength conversion layers . Moreover, the casting process is a cleaner process . And grinding of the ceramic layers is not required . Rather, the described method of fers the possibility of conducting thinning by removing, for example by etching or diluting and spilling / cleaning the first matrix material or by grinding the compound of the first matrix material and the cover material , which for the reasons mentioned above is easier to reali ze .

[0079] According to at least one embodiment or configuration, the method comprises providing a reflective composite on the substrate body, wherein the reflective composite comprises a reflective material and a second matrix material . The reflective composite can be provided by a casting process , like j etting or dispensing . The reflective composite is provided for producing a plurality of reflective elements . Structural and material characteristics revealed in connection with the reflective element may apply to the reflective composite as well and vice versa .

[0080] According to at least one embodiment or configuration, the method comprises sedimentation of the reflective material on the substrate body, wherein sediment layers are produced having the features of a high density or filling grade and possibly a smooth surface . The sedimentation may involve a 2024PF00526 July 17 , 2025 P2024 , 0465 WO N

[0081] 15 centri fuge process analogous to the centri fuge process of the formation of the wavelength conversion layers . After sedimentation, a portion of the second matrix material on top of the sediment layer may be removed, for example by an etching process like a plasma or wet etching process or a diluting and spilling / cleaning process .

[0082] According to at least one embodiment or configuration, the method comprises producing openings by removing the frame structure and depositing the reflective composite in the openings .

[0083] The optoelectronic semiconductor device presented here may be a light-emitting semiconductor device , which is suitable for automotive , consumer, display, proj ection, general and stage lighting applications .

[0084] Further preferred embodiments and further developments of the optoelectronic semiconductor device and method for producing a plurality of optoelectronic semiconductor devices will become apparent from the exemplary embodiments explained below in conj unction with the Figures .

[0085] Figures 1A to 1H show schematic cross-sectional views of stages of a first exemplary embodiment of a method for producing a plurality of optoelectronic semiconductor devices and Figure I I shows a schematic cross-sectional view of a first exemplary embodiment of an optoelectronic semiconductor device ,

[0086] Figures 2A to 2C show schematic cross-sectional views of stages of a second exemplary embodiment of a method for producing a plurality of optoelectronic 2024PF00526 July 17 , 2025

[0087] P2024 , 0465 WO N

[0088] 16 semiconductor devices and Figure 2D shows a schematic cross-sectional view of a second exemplary embodiment of an optoelectronic semiconductor device ,

[0089] Figures 3A to 3G show schematic cross-sectional views of stages of a third exemplary embodiment of a method for producing a plurality of optoelectronic semiconductor devices and Figure 3G shows a schematic cross-sectional view of a third exemplary embodiment of an optoelectronic semiconductor device ,

[0090] Figure 4 shows a schematic cross-sectional view of a stage of a fourth exemplary embodiment of a method for producing a plurality of optoelectronic semiconductor devices and a schematic cross- sectional view of a fourth exemplary embodiment of an optoelectronic semiconductor device ,

[0091] Figure 5 shows a schematic cross-sectional view of a stage of a fi fth exemplary embodiment of a method for producing a plurality of optoelectronic semiconductor devices and a schematic cross- sectional view of a fi fth exemplary embodiment of an optoelectronic semiconductor device .

[0092] Identical , equivalent or equivalently acting elements may be indicated with the same reference numerals in the figures . The figures are schematic illustrations and thus not necessarily true to scale . Rather, comparatively small elements and in particular layer thicknesses can be illustrated exaggeratedly large for the purpose of better clari fication . 2024PF00526 July 17 , 2025

[0093] P2024 , 0465 WO N

[0094] - 17 -

[0095] In connection with Figures 1A to 1H, a first exemplary embodiment of a method for producing a plurality of optoelectronic semiconductor devices 10 is described .

[0096] As becomes evident from Figure 1A, the method comprises a step of providing a substrate body 100 with a plurality of semiconductor layer sequences 2 arranged on a first main surface 100A of the substrate body 100 . For example , the substrate body 100 is di f ferent from a growth substrate used for epitaxially depositing the semiconductor layer sequences 2 .

[0097] A contact structure 50 can be applied on the substrate body 100 comprising a plurality of bond pads 5 arranged on the first main surface 100A. Furthermore , the contact structure 50 can comprise a plurality of first contact layers 51 deposited on the first main surface 100A and a plurality of second contact layers 52 deposited on a second main surface 100B opposite to the first main surface 100A. Adj acent first contact layers 51 as well as adj acent second contact layers 52 can be separated by interspaces 53 , where singulation of the substrate body 100 in a plurality of substrate elements 1 or singulation of an arrangement including the semiconductor layer sequences 2 in a plurality of optoelectronic semiconductor devices 10 ( see description of Figure 1H) can be conducted .

[0098] For example , a bond pad 5 and a pair of a first and second contact layers 51 , 52 can be assigned to each of the semiconductor layer sequences 2 in a unique way and vice versa, wherein the bond pad 5 can be electrically connected to the respective first contact layer 51 , which can be arranged between the respective semiconductor layer sequence 2024PF00526 July 17 , 2025

[0099] P2024 , 0465 WO N

[0100] 18

[0101] 2 and the substrate body 100 . By means of the contact structure 50 , the semiconductor layer sequences 2 can be energi zed during the production process . For example , before forming wavelength conversion layers , at least one of the semiconductor layer sequences 2 can be energi zed by the respective bond pad 5 ( see arrow) in order to emit primary radiation, wherein the primary radiation can be measured . Subsequently, a suitable amount and composition of wavelength conversion composite 30 provided for forming the wavelength conversion layers can be calculated based on the measurement in order to reach a predetermined optical value of a superimposed radiation including primary and secondary radiation .

[0102] As becomes evident from Figure IB, the method further comprises a step of providing a frame structure 60 on the substrate body 100 , wherein the frame structure 60 can be formed from a resist material that is made of a material like a polymer material , which can be patterned by lithography . The frame structure 60 can be arranged in such a way that it laterally surrounds the plurality of semiconductor layer sequences 2 and comprises a plurality of recesses 61 , which are formed on radiation transmission surfaces 2A of the semiconductor layer sequences 2 . In the context of the present application, " laterally" for example means along at least one lateral direction L, wherein the at least one lateral direction L may run parallel to a main extension plane of the arrangement or optoelectronic semiconductor device . Moreover, the frame structure 60 can be arranged in such a way that the bond pads 5 are not covered by the frame structure 60 in order to ensure further measurements during subsequent method steps . 2024PF00526 July 17 , 2025

[0103] P2024 , 0465 WO N

[0104] 19

[0105] As becomes evident from Figure 1C, the method further comprises a step of providing a wavelength conversion composite 30 in the plurality of recesses 61 , wherein the wavelength conversion composite 30 can be fluid and comprise a phosphor material 31 and a first matrix material 32 . As mentioned above , the wavelength conversion composite 30 can be pre-corrected or adapted based on the measurement of the primary radiation before providing the wavelength conversion composite 30 in the plurality of recesses 61 . Moreover, it is possible to perform an additional correction or adaption by providing an additional amount of wavelength conversion composite 30 before sedimentation of the phosphor material 31 , which allows wavelength conversion layers having good homogeneity to be produced . The additional correction or adaption can be based on a measurement of the superimposed radiation when energi zing at least one of the semiconductor layer sequences 2 by means of the respective bond pad 5 ( see arrow) .

[0106] For example , the wavelength conversion composite 30 is provided by a casting process including at least one of the following processes : j etting, dispensing . As mentioned above , the casting process is a clean process because the wavelength conversion composite 30 can be precisely dispensed into the recesses 61 . Moreover, the casting process of fers the possibility of dosing desired amounts of wavelength conversion composite 30 in a rather precise manner and repeating the step of dispensing at least one time . Thus , a starting composition of the wavelength conversion composite 30 is less crucial for a good quality of the wavelength conversion layers . 2024PF00526 July 17 , 2025

[0107] P2024 , 0465 WO N

[0108] 20

[0109] As becomes evident from Figure ID, the method further comprises a step of sedimentation of phosphor material 31 . During sedimentation, the phosphor material 31 or particles of the phosphor material 31 sink in the first matrix material 32 and settle or sediment at the bottom of the recesses 61 on the radiation transmission surfaces 2A to form sediment layers , while layers of the first matrix material 32 are formed on top of the sediment layers 31 . As mentioned above , a high density or filling grade and possibly a smooth surface of the sediment layers 31 are achievable due to the circumstance that larger phosphor particles of greater diameter sediment faster than smaller phosphor particles of smaller diameter, wherein the smaller phosphor particles fill up gaps between the larger phosphor particles .

[0110] For example , the sedimentation involves a centri fuge process , wherein an arrangement of the substrate body 100 , the frame structure 60 and the wavelength conversion composite 30 is spun around a vertical axis , for example a vertical center axis of the arrangement . In particular, the centri fuge process is conducted before solidi fication of the wavelength conversion composite 30 or the first matrix material 32 occurs .

[0111] As becomes evident from Figure IE , a portion or the layers of the first matrix material 32 formed on top of the sediment layers 31 is / are at least partially removed after sedimentation . The removal can be conducted, for example , by an etching process like plasma or wet etching or by diluting and spilling / cleaning . In the case of a first matrix material 32 comprising or consisting of siloxane , plasma etching provides high etching rates . For example , the etching rate is higher for the first matrix material 32 than for the first 2024PF00526 July 17 , 2025

[0112] P2024 , 0465 WO N

[0113] - 21 - resist material 60 so that this ef fect can be used to create a portion of the wavelength conversion layers with the shape of an inverted taper increasing optical ef ficiency . Moreover, the removal of the first matrix material 32 has a positive ef fect on heat dissipation, robustness and thickness of the wavelength conversion layer to be produced .

[0114] After removal , measurement of the superimposed radiation can be conducted by energi zing at least one of the semiconductor layer sequences 2 via the respective bond pad 5 ( see arrow) .

[0115] As becomes evident from Figure I F, the step of providing wavelength conversion composite 30 in the recesses 61 can be repeated after production of first sediment layers 31 and removal of first matrix material layers 32 on top of the first sediment layers 31 i f a correction is needed because the predetermined optical value has not yet been reached . The measurement step can also be repeated before ( see arrow in Figure I F) or after sedimentation ( see arrow in Figure 1G) of the additional amount of wavelength conversion composite 30 , of fering the possibility of further correction and repetition of the step of providing wavelength conversion composite 30 .

[0116] As becomes evident from Figure 1H, the step of sedimentation is also repeated to form second / additional sediment layers on the already existing first sediment layers . Moreover, the step of removing a portion or the layers of the first matrix material 32 formed on top of the sediment layers 31 at least partially after sedimentation is repeated as well .

[0117] The repeating step of providing wavelength conversion composite 30 can be conducted as long as the predetermined optical value has been reached . 2024PF00526 July 17 , 2025 P2024 , 0465 WO N

[0118] - 22 -

[0119] In summary, formation of wavelength conversion layers 3 can be completed after a first process of sedimentation of wavelength conversion composite 30 ( see Figure IE ) or after at least one second process of sedimentation of wavelength conversion composite 30 ( see Figure 1H) . Hence , the wavelength conversion layers 3 can comprise a sediment layer 31 in each case , which is a single layer or a multilayer . Moreover, the wavelength conversion layers 3 are formed on the radiation transmission surfaces 2A without covering side surfaces 2B of the semiconductor layer sequences 2 .

[0120] After formation of the wavelength conversion layers 3 , the frame structure 60 can be removed, wherein the wavelength conversion layers 3 need not be singulated and are thus free of singulation traces . The arrangement can be singulated into a plurality of optoelectronic semiconductor devices 10 by separating the substrate body 100 at the interspaces 53 . The singulation process can be an etching process , for example a so-called Bosch process including dry plasma etching, or a laser dicing or mechanical dicing process .

[0121] In connection with Figure I I , a first exemplary embodiment of an optoelectronic semiconductor device 10 is described . For example , the optoelectronic semiconductor device 10 is produced by a method according to the first exemplary embodiment described in connection with Figures 1A to 1H . Hence , the features described in connection with the method can also apply to the optoelectronic semiconductor device 10 , and vice versa .

[0122] The optoelectronic semiconductor device 10 can be a radiation-emitting device , which is suited for example for 2024PF00526 July 17 , 2025

[0123] P2024 , 0465 WO N

[0124] 23 emitting superimposed radiation of primary and secondary radiation having di f ferent wavelengths or wavelength distributions . For example , the optoelectronic semiconductor device is suited for emitting white light .

[0125] The optoelectronic semiconductor device 10 comprises a substrate element 1 and a semiconductor layer sequence 2 arranged on the substrate element 1 . Suitable materials for the substrate element 1 are semiconductor materials , for example silicon . The optoelectronic semiconductor device 10 can be a thin- film component , which is free of a growth substrate . Moreover, the optoelectronic semiconductor device 10 can be a micro-LED characteri zed by having a particularly small si ze . For example , a radiation exit surface 10A of the optoelectronic semiconductor device 10 can have lateral extents b, which are less than or equal to 100 pm or less than or equal to 70 pm . The lateral extents b can be determined along lateral directions L running perpendicular to each other .

[0126] The semiconductor layer sequence 2 for example comprises a first semiconductor region 21 facing the substrate element 1 , a second semiconductor region 23 facing away from the substrate element 1 and an active zone 22 , which is arranged between the first and second semiconductor regions 21 , 23 and is provided for generating or emitting primary radiation having a first wavelength or first spectral distribution, for example in the ultraviolet to visible spectral range , like blue light . The first semiconductor region 21 can be a region of a first conductivity type , for example of p-conductivity . The second semiconductor region 23 can be a region of a second conductivity type , for example of n-conductivity . However, it is also possible for the first semiconductor 2024PF00526 July 17 , 2025

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[0128] 24 region 21 to be a region of n-conductivity and for the second semiconductor region 23 to be a region of p-conductivity .

[0129] Any of the regions 21 , 22 , 23 can be a single layer or a multilayer, wherein the layers are for example epitaxial layers . The semiconductor layer sequence 2 or at least one of the regions 21 , 22 , 23 or layers contained in the semiconductor layer sequence 2 can comprise or consist of a compound semiconductor material based on nitride according to the above-mentioned formula . However, it is also possible for the semiconductor layer sequence 2 or at least one of the regions 21 , 22 , 23 or layers contained in the semiconductor layer sequence 2 to comprise or consist of a compound semiconductor material based on phosphide or arsenide according to the above-mentioned formulas .

[0130] The optoelectronic semiconductor device 10 comprises a contact structure including a first contact layer 51 , a bond pad 5 electrically connected to the first contact layer 51 and a second contact layer 52 . The first contact layer 51 is arranged between the semiconductor layer sequence 2 and a top surface 1A of the substrate element 1 and can be provided for electrical connection of the first semiconductor region 21 . The second contact layer 52 is arranged on a bottom surface IB of the substrate element 1 opposite to the top surface 1A and can be provided for electrical connection of the second semiconductor region 23 .

[0131] The optoelectronic semiconductor device 10 comprises a wavelength conversion layer 3 , which is applied to a radiation transmission surface 2A of the semiconductor layer sequence 2 without covering side surfaces 2B of the semiconductor layer sequence 2 . Keeping the side surfaces 2B 2024PF00526 July 17 , 2025

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[0133] 25 uncovered can be achieved by the above-described method and the frame structure 60 used for producing the wavelength conversion layers 3 ( see Figure IE , for example ) . The wavelength conversion layer 3 can be conformally deposited on the radiation transmission surface 2A and adhere to the radiation transmission surface 2A without additional connection means like adhesive or bonding means .

[0134] The radiation transmission surface 2A can be an upper surface facing away from the substrate element 1 . The side surfaces 2B may connect the radiation transmission surface 2A to a lower surface 2C of the semiconductor layer sequence 2 facing the substrate element 1 . While the radiation transmission surface 2A and / or lower surface 2C may extend in lateral directions L and essentially parallel to a main extension plane of the optoelectronic semiconductor device 10 , the side surfaces 2B may run obliquely, that is for example at angles greater than 0 ° and smaller than 180 ° , in particular at 90 ° ± 10% , to the radiation transmission surface 2A and / or lower surface 2C or main extension plane .

[0135] The wavelength conversion layer 3 comprises a sediment layer of phosphor material 31 and a first matrix material 32 covering the phosphor material 31 for example in interspaces of the phosphor material 31 ( see description of Figures 1C to IE , for example ) . The phosphor material 31 can be a wavelength-converting material as mentioned above , which is configured to convert primary radiation, for example blue light originating from the active zone 22 into secondary radiation, wherein the secondary radiation may have at least one second wavelength or second spectral distribution di f ferent from the first wavelength or spectral distribution, 2024PF00526 July 17 , 2025

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[0137] 26 for example shi fted towards longer wavelengths . For example , the secondary radiation comprises yellow light .

[0138] The first matrix material 32 can include or be a siloxane material like silicone , for example . It is also possible that the first matrix material 32 includes or is an epoxy material .

[0139] As mentioned above , the sediment layer 31 can be a single layer or multilayer and can have characteristic structural features of sedimentation like for example a high density or filling grade and possibly a smooth surface . Moreover, the sediment layer 31 or wavelength conversion layer 3 can be a ceramic layer having properties such as high melting temperature , high hardness , poor conductivity, high modulus of elasticity, chemical resistance and low ductility .

[0140] For example , the mass fraction of the phosphor material 31 is greater than the mass fraction of the first matrix material 32 , wherein it is possible for the mass fraction w of the phosphor material 31 to range between 0 . 6 ± 10% and 0 . 9 ± 10% . The mass fraction of the first matrix material 32 may have values complementary to the mass fraction of the phosphor material 31 , that is 1-w . The higher mass fraction of the phosphor material 31 can be achieved by the abovedescribed step of removing a portion of the first matrix material 32 on top of the sediment layer 31 after sedimentation ( see Figure ID, for example ) , wherein the reduced portion of the first matrix material 32 has several advantages like better heat dissipation related to less color shi ft and current degradation, smaller and fewer cracks and reduced thickness h of the wavelength conversion layer 3 , wherein the thickness h ranges for example from 30 pm ± 10% 2024PF00526 July 17 , 2025

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[0142] 27 to 40 pm ± 10% . The thickness h can be determined along a vertical direction V, which runs obliquely, especially perpendicularly, to the lateral directions L . Advantageously, the thickness h is large enough to use a bonding wire on the bond pad 5 having a diameter of 20 pm ± 10% to 30 pm ± 10% .

[0143] The above-mentioned advantages result in improved characteristics of the optoelectronic semiconductor device 10 , including improved optical ef ficiency and reliability .

[0144] In connection with Figures 2A to 2C, a second exemplary embodiment of a method for producing a plurality of optoelectronic semiconductor devices 10 is described . The method can comprise steps described in connection with Figures 1A to IE or 1A to 1H of the first exemplary embodiment .

[0145] As becomes evident from Figure 2A, the method further comprises a step of providing a cover material 33 in the plurality of recesses 61 of the frame structure 60 after sedimentation of phosphor material 31 . The cover material 33 may be provided dry as particles like glass pearls or the particles may be provided in a solvent or water or polymer . The cover material 33 or cover particles sinks / sink into the first matrix material 32 on top of the phosphor material 31 . Excessive first matrix material 32 can be absorbed or displaced by the cover material or particles 33 and removed from the recesses 61 . Surplus , unbound cover material 33 can be removed, for example by brushing of f designated by "B" and / or by high pressure cleaning designated by "P" . The regained cover material 33 can be used for other manufacturing processes . 2024PF00526 July 17 , 2025

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[0147] - 28 -

[0148] As becomes evident from Figure 2B, a thinning process , which is designated by "G" , and is a grinding process for example , is conducted after curing the first matrix material 32 . The first matrix material 32 and the cover material 33 can form a compound 34 , which is harder than the first matrix material 32 , but softer than the sediment layer 31 . Thus , a thinning or grinding process can be conducted more easily and cheaply as in the case of the doctor blade related process , which includes grinding of the ceramic wavelength conversion layer . For example , by thinning or grinding the compound 34 , the layer on top of the radiation transmission surface 2A, which includes the wavelength conversion layer 3 , can be formed with a reproducible thickness .

[0149] As becomes evident from Figure 2C, the bond pads 5 can stay free in order to energi ze at least one of the semiconductor layer sequences 2 ( see arrow) and determine optical characteristics of the measured radiation . I f a predetermined optical value is reached, the frame structure 60 can be removed and the arrangement can be singulated into a plurality of optoelectronic semiconductor devices 10 ( see Figure 2D) at the interspaces 53 .

[0150] Figure 2D shows a second exemplary embodiment of an optoelectronic semiconductor device 10 , which can be produced by the method described in connection with Figures 2A to 2C . Hence , the features described in connection with the method can also apply to the optoelectronic semiconductor device 10 and vice versa .

[0151] The optoelectronic semiconductor device 10 according to the second exemplary embodiment di f fers from the optoelectronic semiconductor device 10 according to the first exemplary 2024PF00526 July 17 , 2025 P2024 , 0465 WO N

[0152] 29 embodiment described in connection with Figure I I in that it comprises a cover material 33 , wherein the cover material 33 is arranged on the phosphor material 31 and may be covered by the first matrix material 32 . The first matrix material 32 may cover the cover material 33 in interspaces of the cover material 33 , which can be formed of cover particles like glass pearls .

[0153] It is possible for the first matrix material 32 and the cover material 33 to have di f ferent refractive indices so that the primary and secondary radiation are scattered . As a result , the primary and secondary radiation may be statistically mixed and the optoelectronic semiconductor device 10 can have an essentially uni form color-over-angle distribution .

[0154] In connection with Figures 3A to 3G, a third exemplary embodiment of a method for producing a plurality of optoelectronic semiconductor devices 10 is described . The method can comprise steps described in connection with Figures 1A to IE or Figures 1A to 1H of the first exemplary embodiment and optionally the steps described in connection with Figures 2A to 2C of the second exemplary embodiment .

[0155] As becomes evident from Figure 3A, the method further comprises applying a second resist material 70 that is a material like a polymer material , which can be patterned by lithography, on the bond pads 5 , wherein the second resist material 70 di f fers from the first resist material of the frame structure 60 .

[0156] As becomes evident from Figure 3B, the method comprises removing the frame structure 60 or first resist material , wherein the second resist material 70 withstands removal and 2024PF00526 July 17 , 2025

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[0158] - 30 - openings 80 are produced by removing the frame structure 60 . The method further comprises providing a reflective composite 40 on the substrate body 100 and in the openings 80 , wherein the reflective composite 40 is provided for producing a plurality of reflective elements 4 . For example , the reflective composite 40 comprises a reflective material 41 and a second matrix material 42 , wherein the reflective material 41 may contain TiO2 and / or ZrO2 and / or A12O3 and the second matrix material 42 can include or be a siloxane material like a silicone or include or be an epoxy material . Especially, the reflective material 41 and the second matrix material 42 have di f ferent refractive indices .

[0159] As becomes evident from Figure 3C, the method comprises sedimentation of the reflective material 41 on the substrate body 100 , wherein sediment layers are formed . The sedimentation may involve a centri fuge process analogous to the centri fuge process of the formation of the wavelength conversion layers . Advantageously, the sediment layers are characteri zed for example by a high density or filling grade and possibly by a smooth surface .

[0160] As becomes evident from Figure 3D, the method comprises removing a portion of the second matrix material 42 on top of the sediment layers 41 after sedimentation, for example by an etching process like a plasma or wet etching process or a diluting and spilling / cleaning process leading to thin layer thicknesses of 10 pm ± 10% , for example .

[0161] As becomes evident from Figure 3E , the method comprises removing the second resist material 70 from the bond pads 5 . 2024PF00526 July 17 , 2025

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[0163] 31

[0164] As becomes evident from Figure 3F, the method comprises an opening step at the interspaces 53 , wherein reflective material 41 is removed to uncover the substrate body 100 for singulation . The opening step may further comprise removing material of the contact structure 50 , i f present at the interspaces 53 .

[0165] As becomes evident from Figure 3G, a singulation process is conducted, wherein the substrate body 100 is separated along the vertical direction V at the interspaces 53 to produce a plurality of optoelectronic semiconductor devices 10 . The singulation process can be an etching process , for example a so-called Bosch process including dry plasma etching, or a laser dicing or mechanical dicing process .

[0166] Figure 3G shows a third exemplary embodiment of a method and an optoelectronic semiconductor device 10 , which can be produced by the method described in connection with Figures 3A to 3G . Hence , the features described in connection with the method can also apply to the optoelectronic semiconductor device 10 and vice versa .

[0167] The optoelectronic semiconductor device 10 according to the third exemplary embodiment di f fers from the optoelectronic semiconductor device 10 according to the first and second exemplary embodiments in that it comprises a reflective element 4 . The reflective element 4 comprises a sediment layer of reflective material 41 and a second matrix material 42 covering the reflective material 41 , for example in interspaces of the reflective material 41 . The reflective element 4 covers the side surfaces 2B of the semiconductor layer sequence 2 and laterally surrounds a part of the wavelength conversion layer 3 , wherein in the vertical 2024PF00526 July 17 , 2025

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[0169] 32 direction V the reflective element 4 ends before a top surface 3A of the wavelength conversion layer 3 facing away from the semiconductor layer sequence 2 . Moreover, the reflective element 4 may cover the first contact layer 51 at least partly .

[0170] Advantageously, the reflective element 4 helps to reduce optical losses and to increase contrast .

[0171] Figure 4 shows a fourth exemplary embodiment of a method and an optoelectronic semiconductor device 10 , which can be produced by a method including steps of the first exemplary embodiment described in connection with Figures 1A to IE or Figures 1A to 1H and optionally including the steps of the second exemplary embodiment . Hence , the features described in connection with the method or optoelectronic semiconductor device according to the first or second exemplary can also apply to the optoelectronic semiconductor device 10 according to the fourth exemplary device .

[0172] The optoelectronic semiconductor device 10 according to the fourth exemplary embodiment resembles the optoelectronic semiconductor device 10 according to the third exemplary embodiment in that it comprises a reflective element 4 including a sediment layer of reflective material 41 and a second matrix material 42 covering the reflective material 41 , for example in interspaces of the reflective material 41 , but di f fers from the optoelectronic semiconductor device 10 according to the third exemplary embodiment in that the wavelength conversion layer 3 is partly arranged on the reflective element 4 , wherein the area of the radiation exit surface 10A of the optoelectronic semiconductor device 10 , which delimits the optoelectronic semiconductor device 10 on 2024PF00526 July 17 , 2025

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[0174] 33 a side opposite to the substrate element 1 and where radiation is emitted during operation, is increased by the portion arranged on the reflective element 4 , wherein the portion can almost reach lateral extents of the optoelectronic semiconductor device 10 and is not limited to the lateral extents of the semiconductor layer sequence 2 . Advantageously, this design enables packages with extremely small pixel-to-pixel distances .

[0175] This design can be reali zed by providing the reflective composite 40 before providing the wavelength conversion composite 30 .

[0176] Figure 5 shows a fi fth exemplary embodiment of a method and an optoelectronic semiconductor device 10 , which can be produced by a method including the steps of the third or fourth exemplary embodiment . Hence , the features described in connection with the method or optoelectronic semiconductor device according to the third or fourth exemplary embodiment can also apply to the optoelectronic semiconductor device 10 according to the fi fth exemplary device .

[0177] The optoelectronic semiconductor device 10 according to the fi fth exemplary embodiment resembles the optoelectronic semiconductor device 10 according to the third and fourth exemplary embodiments in that it comprises a reflective element 4 including a sediment layer of reflective material 41 and a second matrix material 42 covering the reflective material 41 , for example in interspaces of the reflective material 41 , but di f fers from the optoelectronic semiconductor device 10 according to the third and fourth exemplary embodiments in that the reflective element 4 extends in the vertical direction V up to the radiation exit 2024PF00526 July 17 , 2025 P2024 , 0465 WO N

[0178] 34 surface 10A and thus forms a reflector cavity providing for low side emission . This enables packages with extremely small pixel-to-pixel distances .

[0179] For example , this design can be reali zed by providing the reflective composite 40 before or after the wavelength conversion composite 30 , wherein the step of providing reflective composite 40 can be repeated at least one time .

[0180] The scope of protection of the invention is not limited to the examples given hereinabove . The invention is embodied in each novel characteristic and each combination of characteristics , which includes in particular every combination of any features stated in the claims , even i f this feature or this combination of features is not explicitly stated in the claims or in the examples .

[0181] This patent application claims the priority of German patent application 102024123893 . 3 , the disclosure content of which is hereby incorporated by reference .

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[0183] 35

[0184] References

[0185] 1 substrate element

[0186] 1A top surface

[0187] IB bottom surface

[0188] 2 semiconductor layer sequence

[0189] 2A radiation transmission surface

[0190] 2B side surface

[0191] 2C lower surface

[0192] 3 wavelength conversion layer

[0193] 3A top surface

[0194] 4 reflective element

[0195] 5 bond pad

[0196] 10 optoelectronic semiconductor device

[0197] 10A radiation exit surface

[0198] 21 first semiconductor region

[0199] 22 active zone

[0200] 23 second semiconductor region

[0201] 30 wavelength conversion composite

[0202] 31 sediment layer of phosphor material , phosphor material

[0203] 32 portion / layer of first matrix material , first matrix material

[0204] 33 cover material

[0205] 34 compound

[0206] 40 reflective composite

[0207] 41 reflective material , sediment layer of reflective material

[0208] 42 second matrix material

[0209] 50 contact structure

[0210] 51 first contact layer

[0211] 52 second contact layer

[0212] 53 interspace

[0213] 60 frame structure , first resist material

[0214] 61 recess 2024PF00526 July 17 , 2025 P2024 , 0465 WO N

[0215] - 36 -

[0216] 70 second resist material

[0217] 80 opening

[0218] 100 substrate body

[0219] 100A first main surface 100B second main surface b lateral extent h thickness

[0220] B brushing of f G thinning process

[0221] P high pressure cleaning

[0222] L lateral direction

[0223] V vertical direction

Claims

2024PF00526 July 17, 2025 P2024, 0465 WO N37Claims1. An optoelectronic semiconductor device (10) comprising- a substrate element (1) ,- a semiconductor layer sequence (2) arranged on the substrate element (1) , wherein the semiconductor layer sequence (2) has a radiation transmission surface (2A) and side surfaces (2B) ,- a wavelength conversion layer (3) applied to the radiation transmission surface (2A) without covering the side surfaces (2B) , and- a reflective element (4) at the side surfaces (2B) , wherein the wavelength conversion layer (3) comprises a sediment layer of phosphor material (31) and a first matrix material (32) covering the phosphor material (31) and the reflective element (4) comprises a sediment layer of reflective material (41) and a second matrix material (42) covering the reflective material (41) .

2. The optoelectronic semiconductor device (10) according to the previous claim, wherein a mass fraction (w) of the phosphor material (31) is greater than a mass fraction of the first matrix material (32) .

3. The optoelectronic semiconductor device (10) according to any of the previous claims, wherein the first matrix material (32) includes or is a siloxane material.

4. The optoelectronic semiconductor device (10) according to any of the previous claims, wherein the wavelength conversion layer (3) is free of singulation traces.2024PF00526 July 17, 2025 P2024, 0465 WO N385. The optoelectronic semiconductor device (10) according to any of the previous claims, which comprises a cover material (33) , wherein the cover material (33) is arranged on the phosphor material (31) .

6. The optoelectronic semiconductor device (10) according to the previous claim, wherein the cover material (33) comprises or consists of glass.

7. The optoelectronic semiconductor device (10) according to any of the previous claims, wherein at least a part of the wavelength conversion layer (3) is laterally surrounded by the reflective element (4) .

8. The optoelectronic semiconductor device (10) according to any of the previous claims, wherein a mass fraction (w) of the phosphor material (31) ranges from more than 0.75 to 0.9.

9. The optoelectronic semiconductor device (10) according to any of the previous claims, wherein the reflective material (41) and the second matrix material (42) have different refractive indices.

10. The optoelectronic semiconductor device (10) according to any of the previous claims, wherein the second matrix material (42) includes or is a siloxane material.

11. A method for producing a plurality of optoelectronic semiconductor devices (10) , the method comprising:- providing a plurality of semiconductor layer sequences (2) on a substrate body (100) , wherein each of the2024PF00526 July 17, 2025P2024, 0465 WO N39 semiconductor layer sequences (2) has a radiation transmission surface (2A) and side surfaces (2B) ,- providing a frame structure (60) on the substrate body (100) , wherein the frame structure (60) laterally surrounds the plurality of semiconductor layer sequences (2) and comprises a plurality of recesses (61) , which are formed on the radiation transmission surfaces (2A) ,- providing a wavelength conversion composite (30) in the plurality of recesses (61) , wherein the wavelength conversion composite (30) comprises a phosphor material (31) and a first matrix material (32) ,- sedimentation of the phosphor material (31) on the radiation transmission surfaces (2A) , wherein wavelength conversion layers (3) are formed on the radiation transmission surfaces (2A) without covering the side surfaces (2B) , wherein each of the wavelength conversion layers (3) comprises a sediment layer of phosphor material (31) and a first matrix material (32) covering the phosphor material (31) ,- providing a reflective composite (40) on the substrate body (100) , wherein the reflective composite (40) comprises a reflective material (41) and a second matrix material (42) , and- sedimentation of the reflective material (41) on the substrate body (100) , wherein a plurality of reflective elements (4) are formed.

12. The method according to the previous claim, wherein the wavelength conversion composite (30) is provided by a casting process including at least one of the following processes: jetting, dispensing.2024PF00526 July 17, 2025 P2024, 0465 WO N- 40 -13. The method according to any of the two previous claims, wherein the sedimentation involves a centrifuge process.

14. The method according to any of claims 11 to 13, wherein a portion of the first matrix material (32) arranged on the sediment layer (31) is removed.

15. The method according to any of claims 11 to 14, which comprises measuring primary radiation and / or superimposed radiation assigned to at least one semiconductor layer sequence (2) before and / or during providing the wavelength conversion composite (30) , wherein the at least one semiconductor layer sequence (2) is energized by a bond pad (5) arranged on the substrate body (100) .

16. The method according to the previous claim, wherein during the formation of the wavelength conversion layers (3) , an amount of the wavelength conversion composite (30) in the recesses (61) is corrected or adjusted in such a way that the superimposed radiation reaches a predetermined optical value.

17. The method according to any of claims 11 to 16, which comprises providing a cover material (33) in the plurality of recesses (61) after sedimentation, wherein the cover material (33) sinks into the first matrix material (32) .

18. The method according to any of claims 11 to 17, which comprises producing openings (80) by removing the frame structure (60) and depositing the reflective composite (40) in the openings (80) .

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