OLED display device and display apparatus

Abstract

The present disclosure relates to the field of display technologies. Provided are an OLED display device and a display apparatus, and the OLED display device comprises a substrate structure, a barrier structure, a plurality of light-emitting structures, and a plurality of light-condensing structures. The barrier structure is arranged on the substrate structure, and partitions to form a plurality of pixel recesses arranged in an array above the substrate structure. The plurality of light-emitting structures are respectively and correspondingly arranged in the plurality of pixel recesses and stacked on the substrate structure. The plurality of light-condensing structures are respectively and correspondingly filled in the plurality of pixel recesses and stacked on the light-emitting structures. The technical solution of the present application can improve the resolution and brightness of OLED display devices.

Description

OLED display devices and display apparatus

[0001] This application claims priority to Chinese Patent Application No. 202411187097.1, filed on August 27, 2024, entitled "OLED Display Device and Display Apparatus", the entire contents of which are incorporated herein by reference. Technical Field

[0002] This invention relates to the field of display technology, and in particular to an OLED display device and display apparatus. Background Technology

[0003] OLED (Organic Light Emitting Diode) displays are organic thin-film electroluminescent devices widely used in display devices such as televisions, mobile phones, computers, monitors, and head-mounted displays. In related technologies, OLED displays can achieve full-color display by using three organic light-emitting layers (red, green, and blue) to emit light directly, or by using a white organic light-emitting layer with a color filter (CF).

[0004] Among them, OLED display devices that use organic light-emitting layers of red, green and blue to emit light directly use vapor deposition and metal mask to make the light-emitting structure. However, since the fine metal mask (FMM) needs to be aligned and there is a certain gap between the fine metal mask and the substrate structure, the diffusion of the light-emitting material needs to be considered. Therefore, when making the light-emitting structure, a certain gap is maintained between adjacent sub-pixels to avoid color mixing between adjacent sub-pixels. This method will result in a large gap between adjacent sub-pixels, which will affect the resolution of the OLED display device.

[0005] OLED display devices that use a white organic light-emitting layer with a color filter (CF) suffer from reduced brightness because the color filter affects light transmission and light extraction efficiency, resulting in some light energy loss. Summary of the Invention

[0006] The main objective of this invention is to provide an OLED display device and display apparatus that aims to improve the resolution and brightness of the OLED display device.

[0007] To achieve the above objectives, the present invention provides an OLED display device comprising:

[0008] Substrate structure;

[0009] A barrier structure is disposed on a substrate structure and is divided above the substrate structure to form a plurality of pixel slots arranged in an array.

[0010] A plurality of light-emitting structures, each of which is respectively disposed in one of the plurality of pixel slots and stacked on the substrate structure; and

[0011] A plurality of light-focusing structures are respectively filled in a plurality of pixel slots and stacked on top of the light-emitting structure.

[0012] In one embodiment, a light-transmitting structure is provided at the end of the barrier structure away from the substrate structure, and the light-transmitting structure has a side surface that surrounds the region forming the pixel slot opening.

[0013] The refractive index of the light-concentrating structure is greater than that of the light-transmitting structure, so that some of the light emitted by the light-emitting structure is emitted from the side of the light-transmitting structure.

[0014] In one embodiment, the angle θ between the side surface and the bottom surface of the light-transmitting structure is ≤90°.

[0015] In one embodiment, the included angle θ between the side surface and the bottom surface is ≥45°.

[0016] In one embodiment, the light-concentrating structure includes at least two light-concentrating layers, wherein the refractive index of the light-concentrating layer adjacent to the light-emitting structure is less than the refractive index of the light-concentrating layer away from the light-emitting structure, and the bonding surface between two adjacent light-concentrating layers is configured as a concave arc surface recessed towards the light-emitting structure.

[0017] In one embodiment, the surface of the light-concentrating structure is flush with the surface of the barrier structure.

[0018] In one embodiment, the barrier structure includes a first barrier portion and a second barrier portion stacked on the substrate structure, wherein the first barrier portion is configured as a conductive structure, the second barrier portion is configured as a light-transmitting structure, and the edge of the second barrier portion protrudes beyond the edge of the first barrier portion.

[0019] The light-emitting structure includes a first electrode layer, a light-emitting layer, and a second electrode layer sequentially stacked on the substrate structure. The first electrode layer is spaced apart from the first barrier portion, and the edge of the second electrode layer overlaps with the first barrier portion.

[0020] In one embodiment, the second blocking portion has a bottom surface that overlaps with the first blocking portion and a side surface that surrounds the region forming the pixel slot opening. At least a portion of the side surface is configured as an inwardly expanding transition surface, and one end of the transition surface is connected to the bottom surface.

[0021] In one embodiment, the transition surface is configured as a sloped surface or a concave arc surface;

[0022] And / or, the angle α between the line connecting the two ends of the transition surface and the bottom surface satisfies 10°≤α≤60°.

[0023] In one embodiment, the substrate structure includes a substrate layer and a dielectric layer stacked on a portion of the surface of the substrate layer, a first electrode layer stacked on the surface of the substrate layer, the dielectric layer covering the edge of the first electrode layer, a light-emitting layer stacked on the side of the first electrode layer and the dielectric layer away from the substrate layer, and a barrier structure stacked on the side of the dielectric layer away from the substrate layer.

[0024] And / or, the substrate structure includes a driving circuit layer and a substrate layer stacked together, and an electrical connection structure passing through the substrate layer, wherein the first electrode layer is stacked on the surface of the substrate layer opposite to the driving circuit layer, and both ends of the electrical connection structure are in contact with the driving circuit layer and the first electrode layer, respectively.

[0025] And / or, the cross-sectional dimension of the first electrode layer is smaller than the pixel slot opening dimension;

[0026] And / or, the second electrode layer comprises at least two metal layers.

[0027] The present invention also proposes a display device, including an OLED display device as described in any of the foregoing embodiments.

[0028] The technical solution of this invention forms a plurality of arrayed pixel slots in an OLED display device through a barrier structure. Light-emitting structures are disposed within these pixel slots, thereby forming a plurality of sub-pixels. Due to the barrier structure, color mixing does not occur between adjacent sub-pixels. When fabricating the light-emitting structure, a fine metal mask is not required to form a light-emitting structure capable of emitting different colors of light on the OLED display device, thus eliminating the need for a color filter and avoiding its impact on light extraction efficiency. Furthermore, it reduces the distance between adjacent sub-pixels, increasing the pixel density and resolution of the OLED display device.

[0029] A light-focusing structure is also provided on the light-emitting side of the light-emitting structure in the pixel slot. The light-focusing structure can focus the light emitted by the light-emitting structure, reduce the light beam that is scattered and lost in all directions, and concentrate more light beams on the front of the OLED display device so that they can be effectively utilized, thereby improving the front light brightness of the OLED display device. Attached Figure Description

[0030] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on the structures shown in these drawings without creative effort.

[0031] Figure 1 is a partial cross-sectional view of the first embodiment of the OLED display device provided by the present invention;

[0032] Figure 2 is a partial cross-sectional view of the second embodiment of the OLED display device provided by the present invention;

[0033] Figure 3 is a partial cross-sectional view of the third embodiment of the OLED display device provided by the present invention;

[0034] Figure 4 is a partial cross-sectional view of the fourth embodiment of the OLED display device provided by the present invention;

[0035] Figure 5 is a partial cross-sectional view of the fifth embodiment of the OLED display device provided by the present invention.

[0036] Reference numerals: 100, OLED display device; 1, substrate structure; 11, substrate layer; 12, dielectric layer; 13, substrate; 14, driving circuit layer; 15, electrical connection structure; 2, barrier structure; 21, first barrier portion; 22, second barrier portion; 221, side surface; 2211, transition surface; 222, bottom surface; 223, pixel groove; 3, light-emitting structure; 31, first electrode layer; 32, light-emitting layer; 33, second electrode layer; 4, light-concentrating structure; 41, light-concentrating layer; 411, first light-concentrating layer; 412, second light-concentrating layer; 413, third light-concentrating layer. Detailed Implementation

[0037] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of the present invention.

[0038] It should be noted that if the embodiments of the present invention involve directional indications (such as up, down, left, right, front, back, etc.), the directional indications are only used to explain the relative positional relationship and movement of the components in a specific posture. If the specific posture changes, the directional indications will also change accordingly.

[0039] Furthermore, if the embodiments of this invention involve descriptions such as "first" or "second," these descriptions are for descriptive purposes only and should not be construed as indicating or implying their relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined with "first" or "second" may explicitly or implicitly include at least one of those features. Additionally, the use of "and / or" or "and / or" throughout the text includes three parallel solutions. For example, "A and / or B" includes solution A, solution B, or a solution where both A and B are satisfied simultaneously. Furthermore, the technical solutions of the various embodiments can be combined with each other, but this must be based on the ability of those skilled in the art to implement them. When the combination of technical solutions is contradictory or impossible to implement, it should be considered that such a combination of technical solutions does not exist and is not within the scope of protection claimed by this invention.

[0040] This invention proposes an OLED display device 100.

[0041] Please refer to Figures 1 to 5. In one embodiment of the present invention, the OLED display device 100 includes a substrate structure 1, a barrier structure 2, a plurality of light-emitting structures 3, and a plurality of light-concentrating structures 4. The barrier structure 2 is disposed on the substrate structure 1 and forms a plurality of pixel slots 223 arranged in an array above the substrate structure 1. The barrier structure 2 includes a first barrier portion 21 and a second barrier portion 22 stacked on the substrate structure 1, with the edge of the second barrier portion 22 protruding from the edge of the first barrier portion 21. The plurality of light-emitting structures 3 are respectively disposed in the plurality of pixel slots 223 and stacked on the substrate structure 1. The plurality of light-concentrating structures 4 are respectively filled in the plurality of pixel slots 223 and stacked above the light-emitting structures 3.

[0042] The OLED display device 100 is a display device that generates electroluminescence using an organic thin film structure. The OLED display device 100 forms multiple pixel regions on a substrate structure 1, and each pixel region is provided with a light-emitting structure 3 to form a sub-pixel.

[0043] The substrate structure 1 serves as the supporting structure for the entire OLED display device 100. The substrate structure 1 includes a substrate 13 as a support base and a driving circuit layer 14 disposed on the substrate 13. Optionally, the substrate 13 is made of glass or plastic. A plurality of light-emitting structures 3 are disposed on the substrate structure 1 and electrically connected to the driving circuit layer 14. Optionally, the substrate structure 14 may further include a substrate layer 11 disposed on the driving circuit layer 14 and an electrical connection structure 15 penetrating the substrate layer 11. The substrate layer 11 may be made of insulating materials such as silicon oxide, silicon nitride, silicon oxynitride, or aluminum oxide to facilitate the formation of a flat surface for the light-emitting structures 3, etc. The light-emitting structures 3 are disposed on the side of the substrate layer 11 facing away from the driving circuit layer 14. The electrical connection structure 15 is electrically connected to both the light-emitting structures 3 and the driving circuit layer 14.

[0044] In this embodiment, the OLED device further includes a barrier structure 2 disposed on the surface of the substrate structure 1. The barrier structure 2 forms a plurality of pixel slots 223 arranged in an array on the surface of the substrate structure 1, and the barrier structure 2 forms a barrier wall between two adjacent pixel slots 223. The barrier structure 2 can be a metal structure. For example, in the following embodiment, the first barrier portion 21 of the barrier structure 2 is set as a conductive portion, so that the second electrode layer 33 of the light-emitting structure 3 is electrically connected to the driving circuit through the first barrier portion 21. The barrier structure 2 can also be made of an insulating material, which is not limited here.

[0045] Several light-emitting structures 3 are respectively disposed in several pixel slots 223. Each light-emitting structure 3 includes a light-emitting layer 32 made of organic material, and a first electrode layer 31 and a second electrode layer 33 located on both sides of the light-emitting layer 32, respectively corresponding to the anode and cathode. The first electrode layer 31 is stacked on the surface of the substrate structure 1 and electrically connected to a driving circuit disposed on the substrate structure 1. When a voltage is applied to the first electrode layer 31 and the second electrode layer 33, the anode attracts electrons released from the cathode, while simultaneously injecting holes into the cathode side. Holes and electrons combine in the light-emitting layer 32, causing electrons to fill the holes. During this process, organic molecules return from the excited state to the ground state, releasing energy and emitting light in the form of photons. The light-emitting structures 3 can be prepared by methods such as vapor deposition, inkjet printing, or vapor deposition.

[0046] Optionally, the light-emitting layer 32 can be a single layer of organic material or a multilayer of organic material layers stacked together. For example, the light-emitting layer 32 may include a light-emitting material layer, a hole injection layer and a hole transport layer located between the light-emitting material layer and the anode, and an electron injection layer and an electron transport layer located between the light-emitting material layer and the cathode.

[0047] Optionally, the driving circuit can be disposed on the surface of the substrate structure 1, and the first electrode layer 31 can be disposed on the driving circuit and electrically connected to the driving circuit; alternatively, the driving circuit can be disposed on the surface of the substrate structure 1 opposite to the first electrode layer 31 or embedded in the substrate structure 1, and the first electrode layer 31 can be electrically connected to the driving circuit layer 14 by providing an electrical connection structure 15 in the substrate structure 1. The first electrode layer 31 can be composed of at least one of the following materials: titanium, titanium nitride, aluminum, indium tin oxide, silver, etc. The second electrode layer 33 is a transparent electrode, and the second electrode layer 33 can be composed of at least one of the following materials: magnesium, silver, indium tin oxide, indium zinc oxide, lithium fluoride, etc. The second electrode layer 33 can be electrically connected to the driving circuit through the first barrier portion 21 in the following embodiment, or it can be electrically connected to the driving circuit through other connection structures.

[0048] In this embodiment, since pixel slots 223 are formed on the OLED display device 100 through the barrier structure 2 and are spaced apart from each other, when fabricating the light-emitting structure 3, the barrier structure 2 can be a mask-deposited light-emitting material, avoiding the mixing of materials between adjacent light-emitting structures 3. Therefore, when different colored light-emitting materials are used to form the light-emitting structure 3 in adjacent pixel slots 223, there will be no color mixing problem between the light-emitting materials of adjacent light-emitting structures 3. That is, light-emitting structures 3 that emit different colors of light can be formed without using a fine metal mask. Since the barrier structure 2 can be formed through an etching process, compared to using a fine metal mask to deposit the light-emitting material, it is beneficial to reduce the spacing between adjacent light-emitting structures 3, increase the arrangement density of light-emitting structures 3 on the OLED display device 100, and improve the resolution of the OLED display device 100.

[0049] In this design, three adjacent light-emitting structures 3 can form a group of pixel structures, with each light-emitting structure 3 being a sub-pixel of the pixel structure. The three light-emitting structures 3 can emit a first color light, a second color light, and a third color light, respectively. For example, the three light-emitting structures 3 can emit red light, blue light, and green light, respectively. By controlling the brightness of each light-emitting structure 3, various colors of light can be mixed to form the pixel structure. Optionally, a group of pixel structures can include four light-emitting structures 3, which can serve as red light sub-pixels, blue light sub-pixels, green light sub-pixels, and white light sub-pixels, respectively. The inclusion of white light sub-pixels can increase the brightness of the pixel structure.

[0050] In this embodiment, the OLED display device 100 further includes a light-concentrating structure 4. The light-concentrating structure 4 fills the pixel slot 223 and is stacked on top of the light-emitting structure 3. The light-concentrating structure 4 is made of a light-transmitting material, allowing the light emitted by the light-emitting structure 3 to pass through the light-concentrating structure 4 and then be emitted outward. The light-concentrating structure 4 can be a single light-concentrating layer 41 stacked on the light-emitting structure 3, or it can be formed by combining at least two light-concentrating layers 41. The light-concentrating layer 41 can be an inorganic film layer or an organic film layer, and can be composed of at least one material such as silicon oxide, silicon nitride, silicon oxynitride, and aluminum oxide. In this embodiment, the setting of the light-concentrating structure 4 can, on the one hand, protect the light-emitting structure 3, preventing the light-emitting structure 3 from being directly exposed to the outside world and easily damaged, and can also prevent moisture from penetrating into the pixel slot 223 and the substrate structure 1 side; on the other hand, the light-concentrating structure 4 is used to concentrate the light emitted by the light-emitting structure 3, reducing the light beam that is scattered and lost in all directions, and concentrating more light beams on the front side of the OLED display device 100 for effective utilization, thereby improving the front light brightness of the OLED display device 100. For example, the refractive index of the focusing structure 4 can be set to be higher than that of the second blocking part 22. Some of the light emitted by the light-emitting structure 3 is directed from the focusing structure 4 to the second blocking part 22. At this time, the light with an incident angle greater than or equal to the critical angle will undergo total internal reflection at the junction of the focusing structure 4 and the second blocking part 22 and will not enter the second blocking part 22, thus reducing the side beams that are scattered and lost in all directions. Alternatively, the focusing structure 4 can be set to a convex lens or other structural form, which can also concentrate the light and reduce the loss of the beam from the side.

[0051] In other words, the technical solution of the present invention forms a plurality of arrayed pixel slots 223 in the OLED display device 100 through the barrier structure 2. The pixel slots 223 are used to set the light-emitting structure 3, thereby forming a plurality of sub-pixels. Due to the setting of the barrier structure 2, there will be no color mixing problem between two adjacent sub-pixels. When manufacturing the light-emitting structure 3, it is not necessary to use a fine metal mask to form light-emitting structures 3 of different colors on the OLED display device 100, thereby eliminating the need for a color filter and avoiding the impact of the color filter on the light emission efficiency. Furthermore, it can reduce the distance between two adjacent sub-pixels, increase the pixel density in the OLED display device 100, and improve the resolution of the OLED display device 100.

[0052] In the pixel slot 223, a light-concentrating structure 4 is also provided on the light-emitting side of the light-emitting structure 3. The light-concentrating structure 4 can concentrate the light emitted by the light-emitting structure 3, reduce the light beam that is scattered and lost in all directions, and concentrate more light beams on the front of the OLED display device 100 so that they can be effectively utilized, thereby improving the front light-emitting brightness of the OLED display device 100.

[0053] In one embodiment, a light-transmitting structure is provided at the end of the barrier structure 2 away from the substrate structure 1. The light-transmitting structure has a side surface 221 that encloses the slot area of ​​the pixel groove 223. The refractive index of the light-concentrating structure 4 is greater than that of the light-transmitting structure, so that some of the light emitted by the light-emitting structure 3 is emitted out after full emission from the side surface 221 of the light-transmitting structure.

[0054] In this embodiment, the barrier structure 2 has a light-transmitting structure at the end away from the substrate structure 1. Specifically, the barrier structure 2 may include a first barrier portion 21 and a second barrier portion 22 stacked together. The first barrier portion 21 is disposed on the surface of the substrate structure 1, and the second barrier portion 22 is disposed at the end of the first barrier portion 21 away from the substrate structure 1 and is configured as a light-transmitting structure. At this time, the side surface 221 of the second barrier portion 22 surrounds the slot area of ​​the pixel groove 223. The light-transmitting structure may contain at least one of the following materials: silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, etc. In this design, the refractive index of the light-concentrating structure 4 is greater than that of the light-transmitting structure. In other words, compared to the light-transmitting structure formed by the second barrier 22, the light-concentrating structure 4 is an optically dense medium. When a portion of the light beam emitted by the light-emitting structure 3 passes through the light-concentrating structure 4 and strikes the side 221 of the light-transmitting structure, the portion of the light beam with an incident angle greater than or equal to the critical angle will undergo total internal reflection at the side 221 of the light-transmitting structure. This causes the reflected light beam to converge towards the center and be emitted, thereby reducing the light beam that diverges and is lost around the pixel slot 223 and increasing the amount of light beam emitted from the front of the OLED display device 100, thereby improving the front luminous brightness of the OLED display device 100.

[0055] In this embodiment, the refractive index of the light-concentrating structure 4 is made greater than that of the light-transmitting structure by using materials with different compositions to fabricate the light-concentrating structure 4 and the light-transmitting structure respectively. For example, the light-concentrating structure 4 can be made of silicon oxide, and the light-transmitting structure can be made of aluminum oxide. Alternatively, the optical properties can be changed by doping with other elements of different types or in different amounts, thereby making the refractive index of the light-concentrating structure 4 greater than that of the light-transmitting structure. For example, both the light-concentrating structure 4 and the light-transmitting structure can be made of silicon oxide. The refractive index can be increased by adding different elements such as boron, phosphorus, and fluorine to the light-concentrating structure 4, or the content of other elements added to the light-concentrating structure 4 and the light-transmitting structure can be different, thereby making the refractive index of the light-concentrating structure 4 greater than that of the light-transmitting structure. Different light-concentrating layers 41 can also be fabricated using different manufacturing processes, such as fused silica, vapor deposition, etc., to fabricate the light-concentrating structure 4 and the light-transmitting structure.

[0056] Optionally, the cross-section of the second barrier portion 22 may be larger than the cross-section of the first barrier portion 21. For example, in the embodiments described below, the edge of the second barrier portion 22 may protrude beyond the edge of the first barrier portion 21. Alternatively, the cross-section of the second barrier portion 22 may have the same cross-sectional shape as the first barrier portion 21. Or, the cross-section of the second barrier portion 22 may be smaller than the cross-section of the first barrier portion 21, for example, by making the overall width of the barrier structure 2 gradually decrease in the direction away from the substrate structure 1.

[0057] In one embodiment, the angle θ between the side surface 221 and the bottom surface 222 of the light-transmitting structure is ≤90°.

[0058] In this embodiment, the light-transmitting structure has a side surface 221 that encloses the opening region of the pixel groove 223 and a bottom surface 222 that is disposed opposite to the substrate structure 1, wherein the bottom surface 222 overlaps the first blocking portion 21 of the blocking structure 2. The side surface 221 and the bottom surface 222 of the light-transmitting structure can be perpendicular to each other, or the opening of the pixel groove 223 enclosed by the light-transmitting structure can be gradually widened in the direction away from the substrate structure 1, making the side surface 221 of the light-transmitting structure an inclined slope. This arrangement prevents the side surface 221 of the light-transmitting structure from tilting towards the first blocking portion 21 along the depth direction of the pixel groove 223, thereby preventing some light from being reflected back into the pixel groove 223 and allowing more light beams to be emitted outward after total internal reflection at the side surface 221 of the light-transmitting structure. In this embodiment, the angle θ between the side surface 221 and the bottom surface 222 of the light-transmitting structure can be 90° (i.e., the side surface 221 is perpendicular to the bottom surface 222), or θ can be any value of 80°, 70°, 60°, 50°, 40° and not exceeding 90°.

[0059] In one embodiment, the angle θ between the side surface 221 and the bottom surface 222 is ≥45°. This arrangement avoids the situation where the angle θ between the side surface 221 and the bottom surface 222 of the light-transmitting structure is too small, resulting in poor focusing of the total internal reflection beam towards the center. The angle θ between the side surface 221 and the bottom surface 222 of the light-transmitting structure does not exceed 45°, and can take any value between 45°, 50°, 60°, 70°, 80°, 90°, and 45° to 90°. This allows the side surface 221 of the light-transmitting structure to maintain an appropriate tilt angle, which is beneficial for improving the light-gathering effect and thus increasing the front luminous brightness of the OLED display device 100.

[0060] Referring to Figures 3 to 5, in one embodiment, the light-concentrating structure 4 includes at least two light-concentrating layers 41. The refractive index of the light-concentrating layer 41 adjacent to the light-emitting structure 3 is less than that of the light-concentrating layer 41 far from the light-emitting structure 3. The bonding surface between two adjacent light-concentrating layers 41 is configured as a concave arc surface recessed towards the light-emitting structure 3.

[0061] In this embodiment, the number of light-concentrating layers 41 in the light-concentrating structure 4 can be two, three, four, five, or more, and the refractive index of each light-concentrating layer 41 gradually increases in the direction away from the light-emitting structure 3. For example, the light-concentrating structure 4 may include a first light-concentrating layer 411 and a second light-concentrating layer 412 stacked sequentially above the light-emitting structure 3, wherein the refractive index of the first light-concentrating layer 411 is less than the refractive index of the second light-concentrating layer 412; or, the light-concentrating structure 4 may include a first light-concentrating layer 411, a second light-concentrating layer 412, and a third light-concentrating layer 413 stacked sequentially above the light-emitting structure 3, such that the refractive index of the first light-concentrating layer 411 is less than the refractive index of the second light-concentrating layer 412, and the refractive index of the second light-concentrating layer 412 is less than the refractive index of the third light-concentrating layer 413.

[0062] Meanwhile, in this embodiment, the bonding surface between two adjacent light-concentrating layers 41 in the light-concentrating structure 4 is a concave arc surface structure, with the concave surface facing away from the light-emitting structure 3. This arrangement allows at least one convex lens structure to be formed in the light-concentrating structure 4 to concentrate the light. The light emitted by the light-emitting structure 3 is refracted by the convex lens structure and then focused inward, thereby improving the brightness of the emitted light.

[0063] To achieve different refractive indices for the various concentrating layers 41 in the concentrating structure 4, different concentrating layers 41 can be made using materials with different compositions. For example, the first concentrating layer 411 can be made of alumina, and the second concentrating layer 412 can be made of silicon oxide. Alternatively, different types or amounts of other elements can be doped to alter the optical properties of the concentrating layers 41, thereby forming concentrating layers 41 with different refractive indices. For instance, both concentrating layers 41 can be made of silicon oxide, and the refractive indices of the two concentrating layers 41 can be different by adding different elements such as boron, phosphorus, and fluorine to the different concentrating layers 41 or by varying the amounts of other elements added to the different concentrating layers 41. Furthermore, different preparation processes can be used to prepare different concentrating layers 41. For example, different methods such as fused silica and vapor deposition can be used to form silicon oxide layers with different microstructures, which can also result in concentrating layers 41 with different refractive indices.

[0064] Referring to Figures 1 to 5, in one embodiment, the surface of the light-concentrating structure 4 is flush with the surface of the barrier structure 2. The light-concentrating structure 4 and other structures higher than the barrier structure 2 can be removed after its fabrication to keep the surface of the OLED display device 100 flat, ensuring light emission and display performance.

[0065] Referring to Figures 1 to 5, in one embodiment, the barrier structure 2 includes a first barrier portion 21 and a second barrier portion 22 stacked on the substrate structure 1. The first barrier portion 21 is configured as a conductive structure, and the second barrier portion 22 is configured as a light-transmitting structure, with the edge of the second barrier portion 22 protruding beyond the edge of the first barrier portion 21. The light-emitting structure 3 includes a first electrode layer 31, a light-emitting layer 32, and a second electrode layer 33 stacked sequentially on the substrate structure 1. The first electrode layer 31 is spaced apart from the first barrier portion 21, and the edge of the second electrode layer 33 overlaps with the first barrier portion 21.

[0066] In this embodiment, the barrier structure 2 includes a first barrier portion 21 and a second barrier portion 22 stacked together. The first barrier portion 21 is disposed on the surface of the substrate structure 1 and is a conductive structure, which may be made of at least one of the following materials: titanium, titanium nitride, aluminum, tantalum, tantalum nitride, etc. One end of the first barrier portion 21 is electrically connected to the driving circuit disposed on the substrate structure 1. The second barrier portion 22 is disposed at the end of the first barrier portion 21 away from the substrate structure 1 and is configured as a light-transmitting structure. At this time, the side 221 of the second barrier portion 22 surrounds the slot area of ​​the pixel groove 223. The second barrier portion 22 may contain at least one of the following materials: silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, etc.

[0067] The light-emitting structure 3 includes a light-emitting layer 32 made of organic material, and a first electrode layer 31 and a second electrode layer 33 located on both sides of the light-emitting layer 32, respectively corresponding to the anode and cathode. The first electrode layer 31 is stacked on the surface of the substrate structure 1 and spaced apart from the first barrier portion 21. Optionally, the driving circuit can be disposed on the surface of the substrate structure 1, and the first electrode layer 31 can be disposed on the driving circuit to be electrically connected to the driving circuit. Alternatively, the driving circuit can be disposed on the surface of the substrate structure 1 away from the first electrode layer 31 or embedded in the substrate structure 1, and the first electrode layer 31 can be electrically connected to the driving circuit by providing an electrical connection structure 15 in the substrate structure 1. The first electrode layer 31 can be composed of at least one of the following materials: titanium, titanium nitride, aluminum, indium tin oxide, silver, etc. The edge of the second electrode layer 33 overlaps with the first barrier portion 21 to be electrically connected to the driving circuit through the first barrier portion 21. The second electrode layer 33 is a transparent electrode and can be composed of at least one of the following materials: magnesium, silver, indium tin oxide, indium zinc oxide, lithium fluoride, etc.

[0068] In this embodiment, the edge of the second barrier portion 22 protrudes beyond the edge of the first barrier portion 21, so that the second barrier portion 22 can act as a shield to prevent the first electrode layer 31 and the light-emitting layer 32 from overlapping with the first barrier portion 21 when the first electrode layer 31 and the light-emitting layer 32 are prepared by vapor deposition or other processes.

[0069] In practical applications, when a voltage is applied to the first electrode layer 31 and the second electrode layer 33, the anode attracts electrons released from the cathode, while simultaneously injecting holes into the cathode side. Holes and electrons combine in the light-emitting layer 32, filling the holes with electrons. During this process, organic molecules return from the excited state to the ground state, releasing energy and emitting light in the form of photons. The light-emitting structure 3 can be prepared using methods such as evaporation, inkjet printing, or vapor deposition. Optionally, the light-emitting layer 32 can be a single layer of organic material or a multilayer of stacked organic material layers. For example, the light-emitting layer 32 may include a light-emitting material layer, a hole injection layer and a hole transport layer located between the light-emitting material layer and the anode, and an electron injection layer and an electron transport layer located between the light-emitting material layer and the cathode.

[0070] Referring to Figures 4 and 5, in one embodiment, the second blocking portion 22 has a bottom surface 222 that overlaps with the first blocking portion 21 and a side surface 221 that surrounds the area forming the slot of the pixel groove 223. At least a portion of the side surface 221 is configured as an inwardly expanding transition surface 2211, and one end of the transition surface 2211 is connected to the bottom surface 222.

[0071] In this embodiment, at least a portion of the opening area of ​​the pixel groove 223 enclosed by the second blocking portion 22 is formed into an inwardly expanding structure, and a transition surface 2211 is formed with one end connected to the bottom surface 222. This can be achieved by setting the entire side surface 221 of the second blocking portion 22 as an inwardly expanding transition surface 2211, or by setting only a portion of the side surface 221 connected to the bottom surface 222 as a transition surface 2211. The transition surface 2211 can be a slope or concave arc surface as described in the following embodiments, or it can be a convex arc surface or other regular or irregular surfaces. It only needs to be set on the side of the second blocking portion 22. The lower end of surface 221 forms an inwardly expanding clearance space, which facilitates the extension of the second electrode layer 33 into the pixel groove 223 and its overlap with the first barrier portion 21, and allows the light-concentrating structure 4 to better extend into the pixel groove 223 and fully fill it. In some embodiments, the light-concentrating structure 4 is formed by combining at least two light-concentrating layers 41, and the bonding surface between two adjacent light-concentrating layers 41 is a concave arc surface recessed towards the light-emitting structure 3. Setting part of the side surface 221 of the second barrier portion 22 as an inwardly expanding structure also facilitates the forming of the light-concentrating structure 4. Optionally, the side surface 211 may include a transition surface 2211 and a reflective surface for total internal reflection as in the above embodiment, with the transition surface 2211 and the reflective surface arranged from the inside to the outside along the outlet of the pixel groove 223.

[0072] Please refer to Figures 4 and 5. In one embodiment, the transition surface 2211 is configured as a slope or a concave arc surface.

[0073] In this embodiment, the transition surface 2211 can be set as an inclined surface or a concave arc surface, so that the transition surface 2211 is smoother, which can better extend the second electrode layer 33 into the pixel groove 223 and overlap with the first barrier part 21, and make the light-gathering structure 4 better extend into the pixel groove 223 and fully fill the pixel groove 223.

[0074] Referring to Figures 4 and 5, in one embodiment, the angle α between the line connecting the two ends of the transition surface 2211 and the bottom surface 222 satisfies 10°≤α≤60°.

[0075] In this embodiment, if the transition surface 2211 is an inclined surface, α is the angle between the inclined transition surface 2211 and the bottom surface 222 of the second barrier portion 22; if the transition surface 2211 is a concave arc surface, α is the angle between the line connecting the two ends of the concave arc surface spaced apart along the thickness direction of the second barrier portion 22 and the bottom surface 222 of the second barrier portion 22; wherein, α can take any value between 10°, 20°, 25°, 30°, 40°, 45°, 50°, 60° and 10° to 60°. This arrangement avoids a small clearance space at the transition surface 2211, ensuring that the second electrode layer 33 and the light-concentrating structure 4 can diffuse well towards the first barrier portion 21 at the edge of the pixel slot 223. This allows the second electrode layer 33 to connect and conduct well with the first barrier portion 21, and also allows the light-concentrating structure 4 to fill the pixel slot 223 well, avoiding gaps within the pixel slot 223, thus giving the OLED display device 100 better light emission and display effects.

[0076] Referring to Figures 1 to 5, in one embodiment, the substrate structure 1 includes a driving circuit layer 14 and a substrate layer 11 stacked together, and an electrical connection structure 15 passing through the substrate layer 11. A first electrode layer 31 is stacked on the substrate layer 11 away from the surface of the driving circuit layer 14. The two ends of the electrical connection structure 15 are in contact with the driving circuit layer 14 and the first electrode layer 31, respectively.

[0077] In this embodiment, the substrate structure 1 includes a substrate 13, a driving circuit layer 14 and a substrate layer 11 stacked in sequence. The light-emitting structure 3 is disposed on the side of the substrate layer 11 away from the driving circuit layer 14. A plurality of electrical connection structures 15 are disposed in the substrate layer 11, and each electrical connection structure 15 is electrically connected to the driving circuit layer 14 and the first electrode layer 31 of the corresponding light-emitting structure 3.

[0078] The substrate 13 can be made of glass or plastic, and the substrate layer 11 can be made of insulating materials such as silicon oxide, silicon nitride, silicon oxynitride, or aluminum oxide. The substrate layer 11 facilitates the formation of a flat surface for the light-emitting structure 3. Alternatively, holes can be made in the substrate structure 1, with a conductive layer on the hole wall serving as an electrical connection structure 15, or the holes can be filled with conductive material to form the electrical connection structure 15. Optionally, the barrier structure 2 can be directly disposed on the substrate layer 11, or a dielectric layer 12 can be disposed on the surface of the substrate layer 11, with the barrier structure 2 disposed on the dielectric layer 12. Specific implementation methods are described in the following embodiments, which will not be repeated here.

[0079] Please refer to Figures 1 to 5. The substrate structure 1 includes a substrate layer 11 and a dielectric layer 12 stacked on a portion of the surface of the substrate layer 11. A first electrode layer 31 is stacked on the surface of the substrate layer 11. The dielectric layer 12 covers the edge of the first electrode layer 31. A light-emitting layer 32 is stacked on the side of the first electrode layer 31 and the dielectric layer 12 away from the substrate layer 11. A barrier structure 2 is stacked on the side of the dielectric layer 12 away from the substrate layer 11.

[0080] In this embodiment, both the substrate layer 11 and the dielectric layer 12 of the substrate structure 1 are made of insulating materials. When fabricating the OLED display device 100 of this application, a first electrode layer 31 is first fabricated on the surface of the substrate layer 11, followed by the dielectric layer 12, so that the dielectric layer 12 is stacked on top of the first electrode layer 31 and the substrate layer 11. Etching can be used to expose the central region of the first electrode layer 31, allowing the light-emitting layer 32 to be fabricated on the first electrode layer 31. The edge region of the first electrode layer 31 is covered by the dielectric layer 12, thereby providing good insulation and preventing contact between the first electrode layer 31 and the first barrier portion 21. The substrate layer 11 may contain at least one of the following materials: silicon oxide, silicon nitride, silicon oxynitride, and aluminum oxide. The dielectric layer 12 may contain at least one of the following materials: silicon oxide, silicon nitride, silicon oxynitride, and aluminum oxide. Optionally, the substrate layer 11 and the dielectric layer 12 may be made of the same material or different materials; this is not limited here.

[0081] Referring to Figures 1 to 5, the cross-sectional dimension of the first electrode layer 31 is smaller than the slot size of the pixel slot 223. It is understandable that the light-emitting area of ​​the light-emitting structure 3 is mainly located in the area where the first electrode layer 31 and the second electrode layer 33 are positioned opposite each other. Making the cross-sectional dimension of the first electrode layer 31 smaller than the slot size of the pixel slot 223 helps to concentrate the light beam emitted by the light-emitting structure 3 in the central area, reducing the light beam that diffuses outward due to refraction at the second blocking part 22.

[0082] In one embodiment, the second electrode layer 33 includes at least two metal layers.

[0083] In this embodiment, the second electrode layer 33 may include two, three, four, or more metal layers. Each metal layer may be fabricated using the same process or different processes, such as vapor deposition, inkjet printing, or deposition. Optionally, the materials of each metal layer may be the same or different. By setting at least two metal layers, the resistance of the second electrode layer 33 can be increased, which can prevent excessive current from causing device damage or overheating, and can also reduce parasitic capacitance and improve light emission uniformity.

[0084] The present invention also proposes a display device comprising the OLED display device 100 of any of the foregoing embodiments. The display device may be a mobile phone, tablet computer, laptop computer, desktop monitor, television, or head-mounted display devices such as AR (Augmented Reality) glasses, VR (Virtual Reality) glasses, and MR (Mixed Reality) glasses. The specific structure of the OLED display device 100 in the display device refers to the above embodiments. Since this display device adopts all the technical solutions of all the above embodiments, it possesses at least all the beneficial effects brought about by the technical solutions of the above embodiments, which will not be elaborated further here.

[0085] The above description is merely an exemplary embodiment of the present invention and does not limit the patent scope of the present invention. Any equivalent structural transformations made using the contents of the present invention specification and drawings under the technical concept of the present invention, or direct / indirect applications in other related technical fields, are included within the patent protection scope of the present invention.

Claims

1. An OLED display device, characterized in that, include: Substrate structure; A barrier structure is disposed on a substrate structure and is divided above the substrate structure to form a plurality of pixel slots arranged in an array. A plurality of light-emitting structures are respectively disposed in a plurality of pixel slots and stacked on the substrate structure; as well as A plurality of light-focusing structures are respectively filled in a plurality of pixel slots and stacked on top of the light-emitting structure.

2. The OLED display device as described in claim 1, characterized in that, The barrier structure has a light-transmitting structure at one end away from the substrate structure, and the light-transmitting structure has a side that surrounds the region forming the pixel slot opening. The refractive index of the light-concentrating structure is greater than that of the light-transmitting structure, so that some of the light emitted by the light-emitting structure is emitted from the side of the light-transmitting structure.

3. The OLED display device as described in claim 2, characterized in that, The angle θ between the side surface and the bottom surface of the light-transmitting structure is ≤90°.

4. The OLED display device as described in claim 3, characterized in that, The angle θ between the side surface and the bottom surface is ≥45°.

5. The OLED display device as described in claim 1, characterized in that, The light-concentrating structure includes at least two light-concentrating layers. The refractive index of the light-concentrating layer adjacent to the light-emitting structure is less than that of the light-concentrating layer away from the light-emitting structure. The bonding surface between two adjacent light-concentrating layers is configured as a concave arc surface recessed towards the light-emitting structure.

6. The OLED display device as claimed in claim 1, characterized in that, The surface of the light-concentrating structure is flush with the surface of the barrier structure.

7. The OLED display device according to any one of claims 1 to 6, characterized in that, The barrier structure includes a first barrier portion and a second barrier portion stacked on the substrate structure. The first barrier portion is configured as a conductive structure, the second barrier portion is configured as a light-transmitting structure, and the edge of the second barrier portion protrudes beyond the edge of the first barrier portion. The light-emitting structure includes a first electrode layer, a light-emitting layer, and a second electrode layer sequentially stacked on the substrate structure. The first electrode layer is spaced apart from the first barrier portion, and the edge of the second electrode layer overlaps with the first barrier portion.

8. The OLED display device as claimed in claim 7, characterized in that, The second barrier portion has a bottom surface that overlaps with the first barrier portion and a side surface that surrounds the area forming the pixel slot opening. At least a portion of the side surface is configured as an inwardly expanding transition surface, and one end of the transition surface is connected to the bottom surface.

9. The OLED display device as claimed in claim 8, characterized in that, The transition surface is set as a sloped surface or a concave arc surface; And / or, the angle α between the line connecting the two ends of the transition surface and the bottom surface satisfies 10°≤α≤60°.

10. The OLED display device as claimed in claim 7, characterized in that, The substrate structure includes a substrate layer and a dielectric layer stacked on a portion of the surface of the substrate layer. A first electrode layer is stacked on the surface of the substrate layer. The dielectric layer covers the edge of the first electrode layer. A light-emitting layer is stacked on the side of the first electrode layer and the dielectric layer away from the substrate layer. A barrier structure is stacked on the side of the dielectric layer away from the substrate layer. And / or, the substrate structure includes a driving circuit layer and a substrate layer stacked together, and an electrical connection structure passing through the substrate layer, wherein the first electrode layer is stacked on the surface of the substrate layer opposite to the driving circuit layer, and both ends of the electrical connection structure are in contact with the driving circuit layer and the first electrode layer, respectively. And / or, the cross-sectional dimension of the first electrode layer is smaller than the pixel slot opening dimension; And / or, the second electrode layer comprises at least two metal layers.

11. A display device, characterized in that, Includes the OLED display device as described in any one of claims 1 to 10.

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