Apparatus for producing conditioned water and method for producing conditioned water

Abstract

An apparatus for producing conditioned water comprising: a dopant element concentration adjustment device that adds a concentration adjustment agent containing a dopant component to water to be treated and controls the amount of the concentration adjustment agent added; and a water quality monitoring device that measures the concentration of the dopant element in the water to be treated after the concentration adjustment agent has been added thereto or in the conditioned water. The apparatus for producing conditioned water includes an impurity component removal device that selectively removes at least some of an impurity component, which is different from the dopant component, from the water to be treated to which the concentration adjustment agent may be added or from the concentration adjustment agent.

Description

Manufacturing Apparatus for Adjusted Water and Manufacturing Method for Adjusted Water

[0001] The present disclosure relates to a manufacturing apparatus for adjusted water and a manufacturing method for adjusted water.

[0002] Substrates used for semiconductor devices such as transistors, diodes, and solar cells are manufactured by diffusing dopant elements such as phosphorus or boron into the semiconductor substrate. As a method for diffusing dopant elements into the semiconductor substrate, for example, a dry processing method such as an ion implantation method is used (see Patent Document 1).

[0003] Japanese Patent Application Laid-Open No. 2023-118399

[0004] Applying a dry processing method to a semiconductor substrate having a complex structure tends to be difficult. Therefore, the present inventor has considered a method of applying an aqueous solution containing a dopant element to the surface of a semiconductor substrate as a wet processing method that is considered to be easy to apply to a semiconductor substrate having a complex structure. The present inventor has found that, in this case, in the manufacturing process of the aqueous solution, there is a possibility that a large amount of unwanted impurity components may be mixed into the aqueous solution.

[0005] An object of the present disclosure is to provide an apparatus for manufacturing adjusted water that is used for coating a semiconductor substrate in a manufacturing process of a semiconductor or a semiconductor device, in which the concentration of a dopant element is adjusted and the content of impurity components is reduced.

[0006] One aspect of the manufacturing apparatus for adjusted water of the present disclosure is a manufacturing apparatus for adjusted water in which the concentration of a dopant element is adjusted and that is used for coating a semiconductor substrate in a manufacturing process of a semiconductor or a semiconductor device. The manufacturing apparatus includes a concentration adjustment device for adding a concentration adjuster containing a dopant component to the water to be treated while controlling the addition amount thereof, and a water quality monitoring device for measuring the concentration of the dopant element in the water to be treated to which the concentration adjuster is added or in the adjusted water. The manufacturing apparatus includes an impurity component removal device for selectively removing at least a part of impurity components different from the dopant component from the water to be treated or the concentration adjuster in which the concentration adjuster may be added.

[0007] The manufacturing apparatus of the present disclosure can produce modified water, in which the concentration of dopant elements is adjusted and the content of impurity components is reduced, which is used for coating a semiconductor substrate in the manufacturing process of a semiconductor or semiconductor device.

[0008] Figure 1 is a schematic block diagram showing one embodiment of the adjusted water production apparatus. Figure 2 is a schematic block diagram showing one embodiment of the adjusted water production apparatus. Figure 3 is a schematic block diagram showing one embodiment of the adjusted water production apparatus. Figure 4 is a schematic block diagram showing one embodiment of the adjusted water production apparatus.

[0009] In this specification, the numerical range N1 to N2 means N1 or greater and N2 or less. In this specification, if the units of the numbers before and after the "~" indicating a numerical range are the same, the unit of the number before the "~" may be omitted.

[0010] The manufacturing apparatus disclosed herein produces the desired adjusted water by processing raw water, such as ultrapure water, by adding concentration adjusting agents, etc., as described below. In this specification, raw water such as ultrapure water, and aqueous solutions obtained by adding concentration adjusting agents, etc., to raw water, are collectively referred to as "water to be treated."

[0011] [Apparatus for producing adjusted water] The apparatus for producing adjusted water, in which the concentration of dopant elements is adjusted, is used for coating a semiconductor substrate in the manufacturing process of a semiconductor or semiconductor device.

[0012] The manufacturing apparatus of the present disclosure comprises: a dopant element concentration adjustment device that adds a concentration adjusting agent containing a dopant component to water to be treated, while controlling the amount added; and a water quality monitoring device that measures the concentration of the dopant element in the water to be treated or adjusted water to which the concentration adjusting agent has been added.

[0013] The manufacturing apparatus of this disclosure includes an impurity removal device that selectively removes at least a portion of unintended impurity components, which are different from the target dopant component, from the water to be treated or the concentration adjusting agent to which the above concentration adjusting agent may be added.

[0014] The manufacturing apparatus of this disclosure can produce adjusted water from water such as ultrapure water that contains the target dopant element or dopant component (for example, a metal element or ion) in a wide concentration range, while removing or reducing the concentration of unintended impurity components (for example, a metal element or ion).

[0015] A dopant component is, for example, a component containing dopant elements that are doped into a semiconductor substrate in the manufacturing process of a semiconductor or semiconductor device. By using such prepared water, a semiconductor substrate can be doped by a wet processing method. For example, by applying the prepared water obtained in the manufacturing apparatus of this disclosure to appropriate locations on the surface of a semiconductor substrate in an appropriate amount during the doping process in the manufacturing process of a semiconductor or semiconductor device, the dopant elements constituting the dopant component can be doped to appropriate locations in appropriate amounts.

[0016] Ultrapure water is produced, for example, by removing ionic substances, organic matter, dissolved gases, and particulate matter from raw water. Examples of raw water include city water, well water, river water, lake water, and industrial water. Preferably, ultrapure water has the following characteristics: resistivity: 18.1 MΩ·cm or higher, particulate matter: 1000 particles / L or less with a particle size of 50 nm or more, live bacteria: 1 cell / L or less, TOC (Total Organic Carbon): 1 μg / L or less, total silicon: 0.1 μg / L or less, metals: 1 ng / L or less, ions: 10 ng / L or less, hydrogen peroxide: 30 μg / L or less, and a water temperature of 25 ± 2°C, but is not particularly limited.

[0017] The prepared water produced using the manufacturing apparatus of this disclosure is transferred to its point of use (UP). An example of a point of use is a doping apparatus for applying the prepared water to a semiconductor substrate in the manufacturing process of a semiconductor or semiconductor device. Examples of semiconductor devices include transistors, diodes, and solar cells.

[0018] <Dopant Element Concentration Adjustment Device> The manufacturing apparatus of the present disclosure includes a dopant element concentration adjustment device. The above-mentioned concentration adjustment device is a device for adding a concentration adjusting agent containing a dopant component to water to be treated, such as ultrapure water, while controlling the amount added. For example, it is a device for adding an aqueous solution containing a dopant component to water to be treated.

[0019] The concentration adjusting agent contains a dopant component. The dopant component contains a dopant element (hereinafter also simply referred to as "dopant") as a constituent element, and is a component for containing the target dopant element in the concentration adjusting agent and the adjusted water produced. One type of dopant component may be used, or two or more types may be used. The concentration adjusting agent is, for example, an aqueous solution containing the above-mentioned dopant component.

[0020] The dopant component is not particularly limited as long as it is a component that has been conventionally used for doping semiconductor substrates. For example, it may be a compound containing an n-type dopant or a compound containing a p-type dopant. The aqueous solution is, for example, an aqueous solution containing at least one selected from the group consisting of compounds containing an n-type dopant and compounds containing a p-type dopant.

[0021] Examples of n-type dopants include phosphorus, arsenic, sulfur, tin, bismuth, selenium, tellurium, and antimony. Examples of p-type dopants include boron, zinc, magnesium, gallium, indium, and aluminum. Preferred dopant components include, for example, phosphorus compounds, arsenic compounds, and boron compounds.

[0022] Examples of phosphorus compounds include phosphoric acid, phosphorous acid, diphosphorous acid, polyphosphoric acid, and diphosphorus pentoxide. Other examples include phosphorous acid esters such as trimethyl phosphate and triethyl phosphate, phosphate esters such as trimethyl phosphate and triethyl phosphate, tris(trialkylsilyl) phosphates such as tris(trimethylsilyl) phosphate, and tris(trialkylsilyl) phosphates such as tris(trimethylsilyl) phosphate.

[0023] Examples of arsenic compounds include arsenic trioxide sodium sulfate, arsenic acid, arsenous acid, and trialkyl arsenates such as triethoxyarsenic and tri-n-butoxyarsenic.

[0024] Examples of boron compounds include boric acid, metaboric acid, boronic acid, perboric acid, subboric acid, diboron trioxide, trialkyl borate, tetrahydroxydiborane, monoalkoxytrihydroxydiborane, dialkoxydihydroxydiborane, trialkoxymonohydroxydiborane, and tetraalkoxydiborane.

[0025] The concentration of the dopant element in the adjusted water obtained by the manufacturing apparatus of this disclosure is set appropriately according to the intended use of the adjusted water and is not particularly limited. The concentration of the dopant element in the adjusted water is preferably 100,000 mg / L or less, more preferably 0.1 to 50,000 mg / L, even more preferably 0.5 to 20,000 mg / L, and particularly preferably 1 to 13,000 mg / L. The concentration adjustment apparatus, for example, adds a concentration adjusting agent to the water to be treated so that the concentration of the dopant element in the adjusted water falls within the above range.

[0026] The above-described concentration adjustment device is, for example, a device that measures and supplies a concentration adjusting agent to a transfer line of water to be treated, such as ultrapure water. The above-described concentration adjustment device comprises, for example, a tank containing the concentration adjusting agent and a supply line that supplies the concentration adjusting agent from the tank to the transfer line, and may further include a pump to adjust the supply rate of the concentration adjusting agent if desired. As will be described later, in one embodiment, the above-described concentration adjustment device may further include a device for removing impurity components. The above-described concentration adjustment device may, for example, include a tank containing the concentration adjusting agent, the removal device, and a supply line that supplies the concentration adjusting agent from the tank through the removal device to the transfer line. Depending on the type of concentration adjusting agent, the above-described concentration adjustment device may include two or more of the above-described tanks.

[0027] A tank containing a concentration adjusting agent may be equipped with at least one selected from the group consisting of a device for purging the inside of the tank using an inert gas (e.g., N2 gas) and a degassing membrane for removing dissolved gases (e.g., dissolved oxygen) from the concentration adjusting agent inside the tank.

[0028] Examples of pumps include diaphragm pumps. Alternatively, a pressurized extrusion pump may be used, in which the concentration adjusting agent is placed in a tank together with an inert gas (e.g., N2 gas), and the concentration adjusting agent is pushed out by the pressure of the inert gas.

[0029] <Impure Component Removal Device> The manufacturing apparatus of the present disclosure includes an impurity component removal device. The removal device selectively removes at least a portion of impurity components (for example, at least one selected from the group consisting of metal elements and ions) different from the dopant components from the water to be treated, which may contain the concentration adjusting agent, or from the concentration adjusting agent. The impurity components here are components that are undesirable to be contained in the adjusted water produced. In one embodiment, the removal device can allow the dopant components to pass through and selectively remove the impurity components. Examples of impurity components include metal elements such as Al, Ca, Fe, Mg, Na, Ni, and Zn, ions, and unintended dopant components.

[0030] The above-mentioned removal device preferably has a removal section corresponding to the type of impurity component to be removed. The above-mentioned removal device preferably has at least one selected from the group consisting of ion exchange resin, ion exchange membrane, nanofiltration membrane (NF membrane), microfiltration membrane (MF membrane), ultrafiltration membrane (UF membrane), and reverse osmosis membrane (RO membrane). Among these, ion exchange resin is preferred. Examples of ion exchange resins include cation exchange resin and anion exchange resin, and cation exchange resin is preferred from the standpoint of removing cationic metal ion impurities in the water to be treated or the concentration adjusting agent.

[0031] Examples of cation exchange resins include strongly acidic cation exchange resins such as sulfonic acid type and weakly acidic cation exchange resins such as carboxylic acid type. Examples of anion exchange resins include strongly basic anion exchange resins such as quaternary amine type and weakly basic anion exchange resins such as primary to tertiary amine type.

[0032] As the ion exchange resin, for example, a mixed resin of a cation exchange resin and an anion exchange resin may be used. This makes it possible, for example, for an impurity component removal device to selectively remove unwanted dopant components depending on the type of dopant component (e.g., boron compounds) and unwanted dopant components (e.g., dopant components other than boron compounds).

[0033] The ion exchange resin may be, for example, a gel-type resin.

[0034] The above-mentioned removal device may include an ion exchange resin column. The ion exchange resin column may have one stage or two or more stages.

[0035] The above-described removal device is, for example, a device that removes impurity components so that the concentration of impurity components in the water to be treated or the concentration adjusting agent is preferably 1 μg / L or less, more preferably 0.1 μg / L or less, even more preferably 0.01 μg / L or less, and particularly preferably 0.001 μg / L or less.

[0036] In one embodiment, the removal device is located upstream or downstream of the dopant element concentration adjustment device on the water transfer line, preferably downstream. This reduces the concentration of impurity components (e.g., metal elements, ions) in the water to be treated.

[0037] In one embodiment, the removal device is included within a dopant element concentration adjustment device. That is, in one embodiment, the concentration adjustment device may further include the removal device. This makes it possible to remove or reduce the concentration of impurity components in a concentration adjustment agent containing dopant components that is added to the water to be treated, and as a result, to remove or reduce the concentration of impurity components in the water to be treated.

[0038] <pH Adjustment Device and Redox Potential Adjustment Device>The manufacturing apparatus of the present disclosure may further include a pH adjustment device that adjusts the pH of water to be treated, such as ultrapure water. The pH adjustment device is a device that measures and supplies a pH adjuster to a transfer line of the water to be treated to adjust the pH of the water to be treated. The pH adjustment device includes, for example, a tank that stores a pH adjuster and a supply line that supplies the pH adjuster from the tank to the transfer line, and may further include a pump that adjusts the supply rate of the pH adjuster if desired.

[0039] The manufacturing apparatus of the present disclosure may further include a redox potential adjustment device (hereinafter also referred to as an "ORP adjustment device") that adjusts the redox potential (hereinafter also referred to as "ORP") of water to be treated, such as ultrapure water. The ORP adjustment device is preferably located on the transfer line downstream of the pH adjustment device and upstream of the degassing device. Therefore, the ORP of the water to be treated may be adjusted by the ORP adjustment device.

[0040] The ORP adjustment device is a device that measures and supplies a redox potential adjuster (hereinafter also referred to as an "ORP adjuster") to the transfer line to adjust the ORP of the water to be treated. The ORP adjustment device includes, for example, a tank that stores an ORP adjuster and a supply line that supplies the ORP adjuster from the tank to the transfer line, and may further include a pump that adjusts the supply rate of the ORP adjuster if desired.

[0041] The pH-adjusted water obtained by adding a pH adjuster to ultrapure water has a higher electrical conductivity than ultrapure water. Therefore, it is possible to suppress the charging of the piping and the liquid flowing through the piping, and to suppress the mixing of fine particles into the water to be treated.

[0042] The tank may include at least one selected from the group consisting of a device that purges the inside of the tank using an inert gas (for example, N2 gas) and a degassing membrane that removes dissolved gas (for example, dissolved oxygen) in the pH adjuster or ORP adjuster in the tank.

[0043] As the pump, for example, a diaphragm pump can be mentioned. As the pump, for example, a pressurized extrusion type pump may be used in which a pH adjuster or an ORP adjuster is placed in a tank together with an inert gas (for example, N2 gas), and the pH adjuster or the ORP adjuster is extruded by the pressure of the inert gas.

[0044] As the pH adjustment device and the ORP adjustment device, when the pH adjuster or the ORP adjuster is a gas, a direct gas-liquid contact device such as a gas permeable membrane module or an ejector may be used.

[0045] As the pH adjuster, when adjusting the pH of the water to be treated or the adjusted water to 7 or more, for example, an aqueous solution of an alkaline compound and a gas of an alkaline compound can be mentioned. The alkaline compound is an active ingredient of the pH adjuster. Examples of the alkaline compound include ammonia, tetramethylammonium hydroxide, 2-hydroxyethyltrimethylammonium hydroxide, sodium hydroxide, potassium hydroxide, sodium carbonate, and sodium hydrogen carbonate. Examples of the gas of the alkaline compound include ammonia gas. One kind of alkaline compound may be used, or two or more kinds may be used.

[0046] Among these, an aqueous ammonia solution or ammonia gas is preferable, and an aqueous ammonia solution is more preferable. By dissolving a trace amount of ammonia in ultrapure water, for example, a dissolution suppression effect and a charge suppression effect of a semiconductor material can be obtained.

[0047] In one embodiment, the pH adjustment device preferably adjusts the pH of the water to be treated to 8 to 11. When the pH is 8 or more, the generation of static electricity in various devices located downstream of the pH adjustment device tends to be suppressed. When the pH is 11 or less, the corrosion of the semiconductor substrate and the deterioration of the membrane or the like included in the degassing device or the gas dissolution membrane type device can be suppressed.

[0048] Examples of pH adjusting agents used to adjust the pH of the treated water or adjusted water to less than 7 include aqueous solutions of acidic compounds such as hydrochloric acid, nitric acid, sulfuric acid, formic acid, acetic acid, and citric acid, as well as gases such as CO2 gas. Acidic compounds and carbon dioxide (CO2 gas) are the active ingredients of the pH adjusting agent. One type of acidic compound may be used, or two or more types may be used. The pH is the value measured at 23°C using a known pH meter.

[0049] The pH adjusting agent is preferably a liquid, more preferably an aqueous solution of an alkaline compound, and even more preferably an aqueous solution of ammonia.

[0050] Examples of ORP adjusting agents for adjusting the oxidation-reduction potential of the treated water or adjusted water to a high (positive) level include aqueous solutions such as hydrogen peroxide, and gases such as ozone and oxygen. Examples of ORP adjusting agents for adjusting the oxidation-reduction potential of the treated water or adjusted water to a low level include aqueous solutions of compounds such as oxalic acid, hydrogen sulfide, and potassium iodide, and gases such as hydrogen gas. One or more of the above compounds may be used. One or more of the above gases may be used. ORP is the value measured at 23°C using a known ORP meter.

[0051] <Apparatus for Removing Fine Particles> The manufacturing apparatus of the present disclosure may further include an apparatus for removing fine particles. The apparatus for removing fine particles is an apparatus for removing fine particles and includes, for example, at least one selected from the group consisting of NF membranes, RO membranes, UF membranes, and MF membranes. The fine particles are assumed to exist as solid matter in water. Examples of fine particles include solid matter with a particle size of 1 nm or more. The location of the apparatus for removing fine particles is not particularly limited.

[0052] <TOC Removal Device> The manufacturing apparatus of the present disclosure may further include a TOC removal device. The TOC removal device targets organic matter. The TOC removal device includes, for example, at least one selected from the group consisting of an NF film, an RO film, an ultraviolet (UV) oxidation device, an ozone oxidation device, an advanced oxidation treatment (AOP) device, an ion exchange resin, and activated carbon. The location of the TOC removal device is not particularly limited.

[0053] <Hydrogen Peroxide Removal Device> The manufacturing apparatus of the present disclosure may further include a hydrogen peroxide removal device. For example, it is preferable that at least a portion of the hydrogen peroxide is removed from the water to be treated to which the ORP adjusting agent is supplied. Therefore, it is preferable that the hydrogen peroxide removal device be located upstream of the ORP adjusting device on the transfer line, and more preferably upstream of the pH adjusting device and the ORP adjusting device. By providing a hydrogen peroxide removal device, the ORP adjusting device can control the ORP of the adjusted water with high precision.

[0054] A hydrogen peroxide removal apparatus includes, for example, a platinum group metal-supported resin column. The platinum group metal-supported resin column includes a resin (hereinafter also referred to as the "carrier resin") and a platinum group metal supported on the resin. In the platinum group metal-supported resin column, hydrogen peroxide in the water to be treated, such as ultrapure water, is decomposed and removed by the catalytic action of the platinum group metal.

[0055] Examples of carrier resins include ion exchange resins. Among ion exchange resins, anion exchange resins are preferred. Platinum group metals are negatively charged, so they are stably supported on anion exchange resins and do not easily fall off. The exchange groups of the anion exchange resin are preferably of the OH type. OH type anion exchange resins have an alkaline resin surface, which promotes the decomposition of hydrogen peroxide.

[0056] Examples of platinum group metals include ruthenium, rhodium, palladium, osmium, iridium, and platinum. The platinum group metals may be used individually, in combination of two or more, as an alloy of two or more, or as a refined product of a naturally occurring mixture without separating it into individual elements. Among these, platinum, palladium, platinum / palladium alloys, or mixtures of two or more of these are preferable due to their strong catalytic activity. Nano-order fine particles of these metals are also preferable.

[0057] <Pump> The manufacturing apparatus of the present disclosure may further include a pump. Using a pump makes it easier to increase the flow velocity and water pressure. Preferably, the pump is a pump in which the amount of pressurization can be controlled. Examples of pumps include rotary positive displacement pumps that continuously perform suction and discharge by volume change, reciprocating positive displacement pumps that repeatedly perform suction and discharge by volume change, and centrifugal pumps that discharge liquid by centrifugal force or thrust force generated by the rotation of an impeller or propeller inside the pump.

[0058] <Degassing device> The manufacturing apparatus of the present disclosure may further include a degassing device for degassing the water to be treated. The degassing device removes at least a portion of the dissolved gases in the water to be treated, thereby reducing the amount of dissolved gases. Examples of dissolved gases include dissolved oxygen and dissolved nitrogen.

[0059] The degassing device is preferably located downstream of the pH adjustment device, or downstream of both the pH adjustment device and the ORP adjustment device, on the transfer line. Such a manufacturing apparatus includes a degassing device that can suppress the generation of static electricity and prevent the accumulation of fine particles on the gas permeable membrane surface. Therefore, the mixing of fine particles into the adjusted water can be suppressed.

[0060] As the degassing device, a membrane degassing device is preferred, and a membrane degassing device equipped with a gas permeable membrane is more preferred. In one embodiment, the membrane degassing device flows the water to be treated into one side (liquid phase chamber) of the gas permeable membrane, and reduces the pressure on the other side (gas phase chamber) with a vacuum pump, thereby removing at least a portion of the dissolved gas by allowing it to pass through the gas permeable membrane and move to the gas phase chamber side. The degassing device reduces the dissolved oxygen concentration in the water to be treated supplied to the gas dissolution membrane device to 0.1 mg / L or less.

[0061] By degassing the water to be treated afterward, rather than directly degassing the concentration adjusters, pH adjusters, and ORP adjusters, the risk of chemical leakage during vacuum degassing of these agents can be reduced.

[0062] The gas permeable membrane can be any membrane that allows gases such as oxygen, nitrogen, and vapor to pass through but not water. Examples of materials that make up the gas permeable membrane include polymer materials such as silicone rubber, polytetrafluoroethylene, polyvinylidene fluoride, polyolefin (e.g., polypropylene), and polyurethane. One polymer material may be used, or two or more may be used. Among these, at least one selected from the group consisting of polypropylene and polyvinylidene fluoride is preferred.

[0063] <Gas Dissolution Membrane System> The manufacturing apparatus of the present disclosure may further include a gas dissolution membrane system. The gas dissolution membrane system is preferably located downstream of the degassing device on the transfer line. The gas dissolution membrane system is, for example, a device that dissolves an inert gas in the degassed water to be treated via a gas permeable membrane. This stabilizes the properties of the water to be treated.

[0064] Examples of inert gases include nitrogen, argon, and helium.

[0065] In one embodiment, the gas dissolution membrane apparatus allows degassed water to be treated to flow through one side (liquid phase chamber) of a gas permeable membrane, and an inert gas to be supplied to the other side (gas phase chamber). This allows the inert gas to pass through the gas permeable membrane and move to the liquid phase side, where it can be dissolved in the water to be treated.

[0066] Examples of materials constituting the gas permeable membrane are as described above, and further examples are omitted in this section. Among the above materials, at least one selected from the group consisting of polypropylene and polyvinylidene fluoride is preferred.

[0067] The gas permeable membrane may be, for example, a hollow fiber membrane. In this case, the gas-dissolved membrane apparatus includes a hollow fiber membrane unit containing a hollow fiber membrane inside. Inside the hollow fiber membrane unit are connected a liquid supply pipe that supplies the degassed water to be treated to the hollow fiber membrane unit, a gas supply pipe that supplies an inert gas to the hollow fiber membrane unit, and a drain pipe that discharges the adjusted water in which the inert gas has dissolved.

[0068] <Water Quality Monitoring Device> The manufacturing apparatus of the present disclosure preferably further comprises a water quality monitoring device for the water to be treated or the adjusted water. The water quality monitoring device is a device for measuring the water quality (e.g., the concentration of dopant elements) of the water to be treated or the adjusted water.

[0069] The water quality monitoring device is preferably located downstream of the dopant element concentration adjustment device on the water transfer line to be treated. The water quality monitoring device measures the concentration of dopant elements in the water to be treated or the adjusted water and monitors whether the concentration of dopant elements is at a desired value.

[0070] The water quality monitoring device is preferably located downstream of the concentration adjustment device on the water transfer line to be treated, and either upstream or downstream of the impurity component removal device.

[0071] The water quality monitoring device is preferably located downstream of the gas-dissolving membrane device on the transfer line. The water quality monitoring device may, for example, measure at least one selected from the group consisting of the concentration of the active ingredient of the pH adjuster, the concentration of the active ingredient of the ORP adjuster, pH, oxidation-reduction potential (ORP), and the concentration of the inert gas in the water to be treated or adjusted, and monitor whether the concentration of the active ingredient, pH, ORP, or inert gas is at a desired value. The water quality monitoring device that measures the concentration of the dopant element may perform these measurements, or a different water quality monitoring device may perform these measurements.

[0072] The concentration of dopant elements in the treated water or adjusted water can be measured using a known pH meter or conductivity meter, or a metal element or ion detector. The pH, ORP, and inert gas concentrations in the treated water or adjusted water can be measured using a known pH meter, an known ORP meter, and a known gas concentration meter, respectively. The concentration of the above-mentioned active ingredients can be measured using a known conductivity meter.

[0073] <Control device> The manufacturing apparatus of the present disclosure preferably further comprises a control device along with a water quality monitoring device. The control device is, for example, a computer. The water quality monitoring device may be connected to the control device, for example, electrically or wirelessly. The control device may be connected, for example, electrically or wirelessly to at least one device selected from the group consisting of the concentration adjustment device, pH adjustment device, ORP adjustment device and gas dissolution membrane device.

[0074] The control device is, for example, a device that controls the amount or rate at which a concentration adjusting agent containing a dopant component is added to a dopant element concentration adjusting device, based on the water quality of the treated water or adjusted water measured by a water quality monitoring device (e.g., concentration of dopant elements, pH, or conductivity).

[0075] The control device can be used to control the adjusted water so that it has a set concentration of the dopant element. Such control of concentration and other parameters by the control device can be achieved by feedback control such as PI control or PID control, as well as by other well-known methods.

[0076] The control device can, for example, transmit a signal to a dopant element concentration adjustment device based on the water quality (e.g., dopant element concentration, pH, or conductivity) measured by a water quality monitoring device, and control the amount or rate at which the concentration adjustment agent is added or supplied in the device using a pump or the like.

[0077] The control device may be, for example, a device that controls at least one selected from the group consisting of the amount or rate of pH adjusting agent added in a pH adjusting device, the amount or rate of ORP adjusting agent added in an ORP adjusting device, and the amount or rate of inert gas added in a gas-dissolved membrane device, based on the water quality of the water to be treated or adjusted as measured by a water quality monitoring device.

[0078] The control device can control the adjusted water so that it has at least one selected from the group consisting of a set concentration of the active ingredient, a set pH value, a set ORP value, and a set concentration of the inert gas. Such control of at least one selected from the group consisting of the concentration of the active ingredient, pH, ORP, and the concentration of the inert gas by the control device can be controlled by known methods, such as feedback control such as PI control or PID control.

[0079] The control device can, for example, transmit a signal to a pH adjustment device based on the water quality measured by a water quality monitoring device (e.g., the concentration of the active ingredient of the pH adjustment agent or the pH), and control the amount of pH adjustment agent added or the supply rate in the pH adjustment device using a pump or the like. The control device can, for example, transmit a signal to an ORP adjustment device based on the water quality measured by a water quality monitoring device (e.g., the concentration of the active ingredient of the ORP adjustment agent or the ORP), and control the amount of ORP adjustment agent added or the supply rate in the ORP adjustment device using a pump or the like. The control device can, for example, transmit a signal to an inert gas mass flow controller based on the water quality measured by a water quality monitoring device (e.g., the concentration of the inert gas), and control the amount of inert gas added or the supply rate supplied from an inert gas supply device using a mass flow controller or the like.

[0080] <Temperature Control Device> The manufacturing apparatus of the present disclosure may further include a temperature control device. The location of the temperature control device in the manufacturing apparatus of the present disclosure is not particularly limited. Examples of temperature control devices include heat exchangers.

[0081] <Coating Apparatus> The manufacturing apparatus of the present disclosure may further include a coating apparatus for coating the prepared water at the point of use of the prepared water with an object. The object is, for example, a semiconductor substrate used in the manufacturing process of a semiconductor or semiconductor device. Known coating apparatuses can be used as the coating apparatus. Examples of coating apparatuses include dip coaters, slit coaters, spin coaters, spray coaters, and inkjet coating apparatuses.

[0082] <Flow Channels> In the manufacturing apparatus of this disclosure, the flow channels (e.g., transfer lines or supply lines) through which the water to be treated, such as ultrapure water, adjusted water, concentration adjusters, pH adjusters, ORP adjusters, and inert gases flow are composed of pipes, for example. Equipment such as tanks, pumps, fittings, and valves may be provided in the above flow channels.

[0083] Examples of materials that make up the piping include polymer materials such as polyvinyl chloride (PVC), polyphenylene sulfide (PPS), polyvinylidene fluoride (PVDF), tetrafluoroethylene perfluoroalkyl vinyl ether copolymer (PFA), and polypropylene (PP); as well as fiber-reinforced plastics (FRP) and stainless steel. Among these, PFA is preferred.

[0084] <Examples of Manufacturing Apparatus Embodiments> Hereinafter, embodiments of the manufacturing apparatus of the present disclosure will be described in detail with reference to the drawings. Figures 1 to 4 are block diagrams schematically representing the manufacturing apparatus of the present disclosure.

[0085] The manufacturing apparatus 1 in Figure 1 comprises a transfer line L1 for the water to be treated, such as ultrapure water, a dopant element concentration adjustment device 10, an impurity component removal device 20, and a water quality monitoring device 30. The transfer line L1 connects the concentration adjustment device 10 and the removal device 20, and connects the removal device 20 to the monitoring device 30. The manufacturing apparatus 1 in Figure 1 is arranged in the order of the concentration adjustment device 10, the removal device 20, and the monitoring device 30 from upstream to downstream of the transfer line L1 through which the water to be treated W flows. The manufactured adjusted water is sent to the point of use (UP) via the transfer line L2.

[0086] The manufacturing apparatus 1 in Figure 2 comprises a transfer line L1 for the water to be treated, such as ultrapure water, a dopant element concentration adjustment device 10, a water quality monitoring device 30, and an impurity component removal device 20. The transfer line L1 connects the concentration adjustment device 10 and the water quality monitoring device 30, and connects the water quality monitoring device 30 to the removal device 20. The manufacturing apparatus 1 in Figure 2 is arranged in the order of the concentration adjustment device 10, the water quality monitoring device 30, and the removal device 20 from upstream to downstream of the transfer line L1 through which the water to be treated W flows. The manufactured adjusted water is sent to the point of use (UP) via the transfer line L2.

[0087] The dopant element concentration adjustment device 10 in Figures 1 and 2 comprises a tank 12 containing a concentration adjusting agent containing the dopant component, and a supply line 14L connecting the tank 12 and the transfer line L1. It may further include a pump (not shown) located on the supply line 14L.

[0088] The manufacturing apparatus 1 in Figure 3 comprises a transfer line L1 for the water to be treated, such as ultrapure water, a dopant element concentration adjustment device 10, and a water quality monitoring device 30. The transfer line L1 connects the concentration adjustment device 10 and the water quality monitoring device 30. The manufacturing apparatus 1 in Figure 3 is arranged in the order of the concentration adjustment device 10 and the water quality monitoring device 30 from upstream to downstream of the transfer line L1 through which the water to be treated W flows. The manufactured adjusted water is sent to the point of use (UP) via the transfer line L2.

[0089] The dopant element concentration adjustment device 10 in Figure 3 comprises a tank 12 containing a concentration adjustment agent containing the dopant component, an impurity component removal device 16, and a supply line 14L connecting the tank 12, the removal device 16, and the transfer line L1.

[0090] The manufacturing apparatus 1 in Figure 4 is equipped with a hydrogen peroxide removal device 90, a pH adjustment device 50, an ORP adjustment device 60, a degassing device 70, and a gas dissolution membrane device 80 in this order on the transfer line L1. Ultrapure water, which is the raw material water flowing through the transfer line L1, passes through the hydrogen peroxide removal device 90 to remove hydrogen peroxide, passes through the pH adjustment device 50 to become pH-adjusted water, the pH-adjusted water passes through the ORP adjustment device 60 to adjust the ORP, is degassed by passing through the degassing device 70, and the degassed pH-adjusted water passes through the gas dissolution membrane device 80 to become adjusted water. In the manufacturing apparatus 1 in Figure 4, the position of the water quality monitoring device 30 for measuring the concentration of dopant elements is not particularly limited as long as it is downstream of the concentration adjustment device 10.

[0091] The manufacturing apparatus 1 in Figure 4 may be equipped with a concentration adjustment device 10 at position A and a removal device 20 at positions B, C, D, E, or F; or it may be equipped with a concentration adjustment device 10 at position A or B and a removal device 20 at positions C, D, E, or F; or it may be equipped with a concentration adjustment device 10 at position A, B, or C and a removal device 20 at position D, E, or F; or it may be equipped with a concentration adjustment device 10 at position A, B, C, or D and a removal device 20 at position E or F; or it may be equipped with a concentration adjustment device 10 at position A, B, C, D, or E and a removal device 20 at position F. The manufacturing apparatus 1 in Figure 4 may be equipped with a dopant element concentration adjustment device 10 equipped with an impurity component removal device 16 at position A, B, C, D, E, or F.

[0092] The manufacturing apparatus 1 in Figure 4 does not necessarily have to include at least one device selected from the group consisting of a hydrogen peroxide removal device 90, a pH adjustment device 50, an ORP adjustment device 60, a degassing device 70, and a gas dissolution membrane type device 80.

[0093] In Figures 1 to 4, the control device 40 controls the amount or supply rate of the concentration adjusting agent added to the concentration adjusting device 10 based on the water quality (e.g., the concentration of dopant elements) obtained by the water quality monitoring device 30. In Figure 4, the control device 40 controls the amount or supply rate of the pH adjusting agent in the pH adjusting device 50, the ORP adjusting agent in the ORP adjusting device 60, and the inert gas in the gas dissolution membrane type device 80 based on the water quality obtained by the water quality monitoring device 30.

[0094] Although the apparatus for producing adjusted water of this disclosure has been described above based on the above embodiments with reference to the attached drawings, the apparatus for producing adjusted water of this disclosure is not limited to the above embodiments, and various modifications can be made.

[0095] [Method for producing adjusted water] The method for producing adjusted water according to the present disclosure comprises: a step of adding a concentration adjusting agent containing a dopant component to water to be treated, with the amount of addition controlled (hereinafter also referred to as the "addition step"); and a step of measuring the concentration of the dopant element in the water to be treated or adjusted water to which the concentration adjusting agent has been added (hereinafter also referred to as the "water quality monitoring step"). The above production method further comprises a step of selectively removing at least a portion of impurity components different from the dopant component from the water to be treated, which may contain the concentration adjusting agent (hereinafter also referred to as the "removal step"), or the above addition step further comprises a step of selectively removing at least a portion of impurity components different from the dopant component from the concentration adjusting agent (removal step).

[0096] The above manufacturing method allows for the production of adjusted water in which the concentration of dopant elements is controlled and the content of impurity components is reduced. This adjusted water can be used for coating semiconductor substrates in the manufacturing process of semiconductors or semiconductor devices.

[0097] In the addition step, a concentration adjusting agent containing a dopant component is added to the water to be treated, such as ultrapure water. Here, it is desirable to add the concentration adjusting agent so that the concentration of the dopant element in the adjusted water is preferably 100,000 mg / L or less, more preferably 0.1 to 50,000 mg / L, even more preferably 0.5 to 20,000 mg / L, and particularly preferably 1 to 13,000 mg / L.

[0098] In the removal step, at least a portion of impurity components different from the dopant components are selectively removed from the water to be treated, which may contain a concentration adjusting agent, or from the concentration adjusting agent. Here, it is desirable to remove the impurity components so that the concentration of impurity components in the water to be treated or the concentration adjusting agent is preferably 1 μg / L or less, more preferably 0.1 μg / L or less, even more preferably 0.01 μg / L or less, and particularly preferably 0.001 μg / L or less.

[0099] In the water quality monitoring process, the water quality (e.g., concentration of dopant elements) of the treated water to which the concentration adjusting agent has been added, or the resulting adjusted water, is measured to monitor whether or not it has the desired water quality. To ensure that the adjusted water has the desired water quality, a control device is used to control the amount or rate at which the concentration adjusting agent is added during the addition process.

[0100] The above manufacturing method may further include at least one step selected from the group consisting of: a hydrogen peroxide removal step to remove hydrogen peroxide from the water to be treated; a pH adjustment step to adjust the pH of the water to be treated; an ORP adjustment step to adjust the oxidation-reduction potential (ORP) of the water to be treated; a degassing step to remove gas from the water to be treated; and a gas dissolution step to dissolve an inert gas into the water to be treated.

[0101] Details of the above manufacturing method and the conditions for each step can be applied as described in the [Prepared Water Production Apparatus] section above, and are therefore omitted from this section. The manufacturing method disclosed herein can be carried out, for example, using the above-described production apparatus.

[0102] The prepared water produced by the manufacturing apparatus or method of the present disclosure is used, for example, to be applied to a semiconductor substrate in the manufacturing process of a semiconductor or semiconductor device, specifically, to dope the semiconductor substrate (liquid doping). For example, after applying the prepared water to the surface of the semiconductor substrate, the dopant contained in the prepared water is diffused into the semiconductor substrate by heat treatment. Examples of application methods include dip coating, slit coating, spin coating, spray coating, and inkjet coating. The temperature of the prepared water to be applied is preferably 10 to 90°C, more preferably 20 to 45°C, and the immersion time in the case of dip coating, in which the semiconductor substrate is immersed in the prepared water, is preferably 0.5 to 60 minutes, more preferably 1 to 45 minutes. From the viewpoint of the diffusibility of the dopant element and the thermal budget, the heating temperature in the heat treatment is preferably 200 to 1000°C, more preferably 300 to 900°C, and even more preferably 400 to 800°C. From the viewpoint of the above, the heating time is preferably 1 minute to 10 hours, more preferably 3 minutes to 5 hours, and even more preferably 5 minutes to 60 minutes.

[0103] Various substrates that have been conventionally used as targets for dopant diffusion can be used as the semiconductor substrate without any particular limitations. For example, silicon substrates such as silicon wafers can be used as the semiconductor substrate. The material of the surface of the semiconductor substrate to which the above-mentioned adjusted water is applied is not particularly limited, but examples include Si, SiO2, SiCN, SiN, and SiC.

[0104] [Examples of Embodiments] This disclosure relates, for example, to the following [1] to

[12] . [1] A production apparatus for adjusted water in which the concentration of a dopant element is adjusted, used for coating a semiconductor substrate in a semiconductor or semiconductor device manufacturing process, wherein the production apparatus comprises a dopant element concentration adjustment device that adds a concentration adjusting agent containing a dopant component to water to be treated, with control over the amount added, and a water quality monitoring device that measures the concentration of the dopant element in the water to be treated or the adjusted water to which the concentration adjusting agent has been added, and the production apparatus comprises an impurity component removal device that selectively removes at least a portion of impurity components different from the dopant component from the water to be treated or the concentration adjusting agent to which the concentration adjusting agent may have been added. [2] The production apparatus for adjusted water according to [1], wherein the removal device has at least one selected from the group consisting of an ion exchange resin, an ion exchange membrane, a nanofiltration membrane, a microfiltration membrane, an ultrafiltration membrane, and a reverse osmosis membrane. [3] The apparatus for producing adjusted water according to [1] or [2], wherein the removal device is located upstream or downstream of the concentration adjustment device for the dopant element on the transfer line of the water to be treated. [4] The apparatus for producing adjusted water according to [1] or [2], wherein the concentration adjustment device has the removal device. [5] The apparatus for producing adjusted water according to any one of [1] to [4], wherein the removal device removes the impurity component so that the concentration of the impurity component in the water to be treated or the concentration adjustment agent is 1 μg / L or less. [6] The apparatus for producing adjusted water according to any one of [1] to [5], wherein the concentration adjustment device adds the concentration adjustment agent to the water to be treated so that the concentration of the dopant element constituting the dopant component in the adjusted water is 100,000 mg / L or less. [7] The apparatus for producing adjusted water according to any one of [1] to [6], further comprising a control device that controls the amount of the concentration adjusting agent added in the concentration adjusting device based on the concentration of the dopant element measured by the water quality monitoring device. [8] The apparatus for producing adjusted water according to any one of [1] to [7], wherein the concentration adjusting device adds an aqueous solution containing the dopant component as the concentration adjusting agent to the water to be treated.[9] The apparatus for producing adjusted water according to [8], wherein the aqueous solution contains at least one selected from the group consisting of compounds containing n-type dopants and compounds containing p-type dopants.

[10] The apparatus for producing adjusted water according to any one of [1] to [9], further comprising at least one adjustment device selected from the group consisting of a pH adjustment device for adjusting the pH of the water to be treated and an oxidation-reduction potential adjustment device for adjusting the oxidation-reduction potential of the water to be treated.

[11] The apparatus for producing adjusted water according to any one of [1] to

[10] , which is an apparatus for producing adjusted water in which the concentration of dopant elements is adjusted for use in doping semiconductor substrates in the manufacturing process of semiconductors or semiconductor devices.

[12] A method for producing adjusted water in which the concentration of a dopant element is adjusted, which is used for coating a semiconductor substrate in a semiconductor or semiconductor device manufacturing process, comprising: an addition step of adding a concentration adjusting agent containing a dopant component to water to be treated, with control over the amount added; and a water quality monitoring step of measuring the concentration of the dopant element in the water to be treated or the adjusted water to which the concentration adjusting agent has been added, wherein the method further comprises a step of selectively removing at least a portion of impurity components different from the dopant component from the water to be treated, which may contain the concentration adjusting agent, or the addition step further comprises a step of selectively removing at least a portion of impurity components different from the dopant component from the concentration adjusting agent.

[0105] The apparatus for producing adjusted water according to this disclosure will be described based on examples and applications. The apparatus for producing adjusted water according to this disclosure is not limited to the following examples and applications.

[0106] A 4% by mass boric acid aqueous solution, a 4% by mass arsenite aqueous solution, and a 50% by mass phosphoric acid aqueous solution were prepared, respectively. In the following examples, the manufacturing apparatus 1 shown in Figure 1 was used. The dopant element concentration adjustment apparatus 10 comprises a tank containing the boric acid aqueous solution, a tank containing the arsenite aqueous solution, and a tank containing the phosphoric acid aqueous solution. The impurity component removal apparatus 20 comprises a cation exchange resin (product name KR-FC, manufactured by Kurita Water Industries), a cation exchange resin (product name SK1B, manufactured by Mitsubishi Chemical), or a Mix resin (product name KR-FM, manufactured by Kurita Water Industries, a mixed resin of cation exchange resin and anion exchange resin).

[0107] [Example 1] Using the manufacturing apparatus 1 shown in Figure 1, the following adjusted water was produced as follows. To ultrapure water, in a concentration adjustment device 10, amounts of boric acid aqueous solution, arsenous acid aqueous solution, and phosphoric acid aqueous solution were added respectively so that the concentrations of boric acid, arsenous acid, and phosphoric acid in the adjusted water were the values ​​shown in Table 1, and a mixture was prepared. Next, the obtained mixture was passed through a removal device 20 equipped with a cation exchange resin (product name KR-FC). In this way, adjusted water 1 with concentrations of boric acid, arsenous acid, and phosphoric acid of 1% by mass (10,000 ppm) each was prepared.

[0108] [Examples 2-5, Comparative Example 1] Adjusted waters 2-5 and 9 were prepared in the same manner as in Example 1, except that the amount of boric acid aqueous solution added was adjusted, and the type of ion exchange resin and the concentration of each component in the adjusted water were changed as shown in Table 1. In Comparative Example 1, the removal device 20 equipped with cation exchange resin was not provided.

[0109] [Examples 6-8] Using the manufacturing apparatus 1 shown in Figure 1, the following adjusted water was produced as follows. An aqueous solution of boric acid, arsenous acid, or phosphoric acid was added to ultrapure water in a concentration adjustment device 10 in an amount such that the concentration of boric acid, arsenous acid, or phosphoric acid in the adjusted water was the value shown in Table 1, thereby preparing an aqueous solution. Next, the obtained aqueous solution was passed through a removal device 20 equipped with a cation exchange resin (product name KR-FC). In this way, adjusted water 6-8 with a concentration of boric acid, arsenous acid, or phosphoric acid of 1% by mass (10,000 ppm) was prepared.

[0110] [Application Example] The amount of dopant in the adjusted water (amounts of P, B, and As) was measured using an inductively coupled plasma mass spectrometer (ICP-MS, manufactured by Agilent). Evaluation criteria for the amount of dopant in the adjusted water: Small: The content of P, B, and As is less than 1 mg / L. Medium: The content of P, B, and As is between 1 and 10,000 mg / L. Large: The content of P, B, and As is greater than 10,000 mg / L. The above content evaluations are evaluations for each of the above elements.

[0111] The amount of metallic elements in the adjusted water was measured using an inductively coupled plasma mass spectrometer (ICP-MS, manufactured by Agilent). Evaluation criteria for metallic element content in adjusted water: Small: Na, Ca, and Fe content is less than 1 ng / L. Medium: Na, Ca, and Fe content is between 1 and 1000 ng / L. Large: Na, Ca, and Fe content exceeds 1000 ng / L. The above content evaluations are for each individual element.

[0112] The adjusted water obtained in the examples or comparative examples was filled into a batch tank, and the silicon wafer was immersed in the adjusted water at a temperature of 25°C for 10 minutes, after which the silicon wafer was removed from the adjusted water. The amount of dopant on the silicon wafer was analyzed using VPD-ICP-MS (manufactured by AEXPERT system).

[0113] The immersed silicon wafers were annealed at 800°C for 20 minutes. To determine the amount of doped ions on the silicon wafers, volume resistivity was calculated using a four-probe sheet resistance analyzer (SEMILab, FPP1000). Furthermore, to determine the appropriate location of the doped ions, the lifetime was measured using a carrier lifetime analyzer (SEMILab, WT-2000PVN). Volume resistivity and lifetime were evaluated according to the following criteria. The results are shown in Table 1. A longer lifetime indicates less contamination.

[0114] Evaluation criteria for volume resistivity: ○: 1.0 × 10 -4 ~1.0 x 10 3 Ωcm △:1.0×10 3 Over Ωcm ×: 1.0×10-4 Less than Ωcm

[0115] Lifetime evaluation criteria: ○: Greater than 100 μsec △: 10 μsec to 100 μsec ×: Less than 10 μsec

[0116]

[0117] 1... Adjusted water production equipment, 10... Dopant element concentration adjustment equipment, 12... Tank containing concentration adjusting agent, 14L... Supply line, 16, 20... Impurity component removal equipment, 30... Water quality monitoring equipment, 40... Control device, 50... pH adjustment equipment, 60... ORP adjustment equipment, 70... Degassing equipment, 80... Gas dissolution membrane type equipment, 90... Hydrogen peroxide removal equipment, W... Water to be treated such as ultrapure water, L1, L2... Transfer line, UP... Use point

Claims

1. A production apparatus for adjusted water in which the concentration of dopant elements is adjusted, used for coating a semiconductor substrate in the manufacturing process of a semiconductor or semiconductor device, the production apparatus comprising: a dopant element concentration adjustment device that adds a concentration adjusting agent containing a dopant component to water to be treated, with control over the amount added; and a water quality monitoring device that measures the concentration of the dopant element in the water to be treated or the adjusted water to which the concentration adjusting agent has been added; the production apparatus further comprising an impurity component removal device that selectively removes at least a portion of impurity components different from the dopant component from the water to be treated or the concentration adjusting agent to which the concentration adjusting agent may have been added.

2. The apparatus for producing adjusted water according to claim 1, wherein the removal device has at least one selected from the group consisting of ion exchange resin, ion exchange membrane, nanofiltration membrane, microfiltration membrane, ultrafiltration membrane, and reverse osmosis membrane.

3. The apparatus for producing adjusted water according to claim 1, wherein the removal device is located upstream or downstream of the dopant element concentration adjustment device on the transfer line of the water to be treated.

4. The apparatus for producing adjusted water according to claim 1, wherein the concentration adjustment device has the removal device.

5. The apparatus for producing adjusted water according to claim 1, wherein the removal device removes the impurity components so that the concentration of the impurity components in the treated water or the concentration adjusting agent is 1 μg / L or less.

6. The apparatus for producing adjusted water according to claim 1, wherein the concentration adjusting device adds the concentration adjusting agent to the water to be treated so that the concentration of the dopant element constituting the dopant component in the adjusted water is 100,000 mg / L or less.

7. The apparatus for producing adjusted water according to claim 1, further comprising a control device that controls the amount of concentration adjusting agent added to the concentration adjusting device based on the concentration of the dopant element measured by the water quality monitoring device.

8. The apparatus for producing adjusted water according to claim 1, wherein the concentration adjustment device adds an aqueous solution containing the dopant component as the concentration adjustment agent to the water to be treated.

9. The apparatus for producing adjusted water according to claim 8, wherein the aqueous solution is an aqueous solution containing at least one selected from the group consisting of compounds containing an n-type dopant and compounds containing a p-type dopant.

10. The apparatus for producing adjusted water according to claim 1, further comprising at least one adjustment device selected from the group consisting of a pH adjustment device for adjusting the pH of the water to be treated and a redox potential adjustment device for adjusting the redox potential of the water to be treated.

11. An apparatus for producing adjusted water in which the concentration of a dopant element is adjusted, used for doping a semiconductor substrate in a semiconductor or semiconductor device manufacturing process, according to any one of claims 1 to 10.

12. A method for producing adjusted water in which the concentration of a dopant element is adjusted, for use in coating a semiconductor substrate in the manufacturing process of a semiconductor or semiconductor device, comprising: an addition step of adding a concentration adjusting agent containing a dopant component to water to be treated, with control over the amount added; and a water quality monitoring step of measuring the concentration of the dopant element in the water to be treated or the adjusted water to which the concentration adjusting agent has been added, wherein the method further comprises a step of selectively removing at least a portion of impurity components different from the dopant component from the water to be treated, to which the concentration adjusting agent may have been added, or the addition step further comprises a step of selectively removing at least a portion of impurity components different from the dopant component from the concentration adjusting agent.

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