Resonator, chip and electronic device

Abstract

Provided in the present application are a resonator, a chip and an electronic device. The present application relates to the technical field of resonators. The resonator comprises a substrate, a piezoelectric layer stacked on the substrate, and a plurality of interdigital electrodes, wherein the substrate and the piezoelectric layer are stacked, the plurality of interdigital electrodes are located on the side of the piezoelectric layer facing away from the substrate, and the plurality of interdigital electrodes are arranged side by side in a first direction, the first direction being parallel to the surface of the substrate. The substrate comprises a first material, and the first material has a first shear wave velocity V01, where V01=max(max{VSH,VSV}), VSH being the horizontal shear wave velocity of the first material in any direction, and VSV being the vertical shear wave velocity of the first material in any direction; the substrate has a shear wave velocity V1 in the first direction, where V1=max{VSH_x,VSV_x}, VSH_x being the horizontal shear wave velocity of the surface of the substrate in the first direction, and VSV_x being the vertical shear wave velocity of the surface of the substrate in the first direction; formula (I) is satisfied. Thus, leakage of shear bulk acoustic waves into the substrate can be effectively inhibited, thus optimizing device performance.

Description

Resonator, chip, electronic device

[0001] The present application claims priority to the Chinese patent application No. 202411393697.3, filed on September 29, 2024, and entitled "Resonator, chip, electronic device", the entire content of which is incorporated herein by reference. TECHNICAL FIELD

[0002] The present application relates to the technical field of resonators, and relates to a resonator, a chip, and an electronic device comprising the chip or the resonator. BACKGROUND

[0003] With the development of communication technology, the demand for resonators for electronic devices will increase significantly. For example, horizontally-excited bulk acoustic resonators (XBAR), vertically-excited bulk acoustic resonators (YBAR), longitudinal leaky surface acoustic wave resonators (LLSAW), and film bulk acoustic resonators (FBAR) are widely concerned. These resonators have high electromechanical coupling coefficients and quality factors Q values, which have been developed for the preparation of sub-6GHz frequency band filters.

[0004] The current technology uses a solid substrate placed below the piezoelectric film to improve the device firmness, device heat dissipation and power tolerance compared with the suspended piezoelectric film resonator.

[0005] However, in YBAR, XBAR or LLSAW devices, how to effectively suppress bulk acoustic wave leakage is a key technical problem currently faced. SUMMARY

[0006] The present application provides a resonator, a chip with the resonator, and an electronic device comprising the chip or the resonator. The purpose is to provide a resonator that can effectively suppress shear bulk acoustic wave leakage.

[0007] To achieve the above-mentioned purpose, the embodiments of the present application adopt the following technical solutions:

[0008] In a first aspect, the present application provides a resonator. In an embodiment, the resonator can be an acoustic resonator, such as a YBAR, XBAR or LLSAW device.

[0009] The resonator comprises a substrate, a piezoelectric layer stacked on the substrate, and a plurality of interdigital electrodes, the substrate and the piezoelectric layer are stacked, the plurality of interdigital electrodes are located on a side of the piezoelectric layer facing away from the substrate, the plurality of interdigital electrodes are arranged side by side along a first direction, and the first direction is parallel to a surface of the substrate; the substrate comprises a first material, the first material has a first shear wave speed V01, V01 = max(max{V SH , SV}, V SH is a horizontal shear wave speed of the first material in any one direction, V SV is a vertical shear wave speed of the first material in any one direction; the substrate has a shear wave speed V1 in the first direction, V1 = max{V SH_x , SV_x}, V SH_x is a horizontal shear wave speed of the surface of the substrate in the first direction, V SV_x is a vertical shear wave speed of the surface of the substrate in the first direction;

[0010] wherein,

[0011] In the resonator of the examples of the present application, the shear wave speed V1 of the substrate in the first direction (the arrangement direction of the plurality of interdigital electrodes) satisfies V1 = max{V and V1 = max{V SH_x , SV_x}. It can be understood that: when the maximum horizontal shear wave speed or the maximum vertical shear wave speed of the substrate in the first direction satisfies V1 = max{V , the horizontal shear wave or the vertical shear wave has a large speed in the first direction of the substrate, and the component of the acoustic wave energy of the resonator in the SH mode or the SV mode direction can be inhibited from leaking into the substrate, thereby improving the electromechanical coupling coefficient and the quality factor of the device and optimizing the performance of the device.

[0012] In an implementable manner, the substrate comprises at least one of a 4H-SiC substrate, a 6H-SiC substrate, or a 3C-SiC substrate.

[0013] The substrate comprising 4H-SiC, 6H-SiC, or 3C-SiC belongs to a high-speed substrate structure, and the use of the high-speed substrate can also prevent energy from leaking in the direction of the substrate, thereby improving the Q value and the electromechanical coupling coefficient of the resonator.

[0014] In some other implementable manners, the substrate can be at least one of a diamond substrate, a silicon carbide (SiC) substrate, and a boron nitride (BN) substrate.

[0015] The diamond substrate or the boron nitride (BN) substrate belongs to a high sound velocity substrate, which can prevent energy from leaking in the direction of the substrate, and improve the quality factor and the electromechanical coupling coefficient.

[0016] In an implementable manner, the substrate includes at least one of a 4H-SiC substrate or a 6H-SiC substrate.

[0017] wherein

[0018] It can be understood that, in the case that the substrate includes at least one of a 4H-SiC substrate or a 6H-SiC substrate, when the first shear wave velocity V01 of the first material and the shear wave velocity V1 of the substrate in the first direction satisfy the above condition, the substrate has the maximum horizontal shear wave velocity or the maximum vertical shear wave velocity, and the component of the acoustic wave energy of the resonator in the SH mode or the SV mode is inhibited from leaking into the substrate.

[0019] In an implementable manner, in the 4H-SiC substrate or the 6H-SiC substrate, the Euler angle of the crystal is (α, β, γ); 0°≤α≤180°, 60°≤β≤120°, 40°≤γ≤55°; or 0°≤α≤180°, 60°≤β≤120°, 125°≤γ≤140°.

[0020] In the 4H-SiC substrate or the 6H-SiC substrate, when the Euler angle of the crystal is selected from the range of the above examples, the substrate can have the maximum horizontal shear wave velocity or the maximum vertical shear wave velocity in the first direction, and the acoustic radiation and energy leakage of the piezoelectric thin film shear bulk acoustic wave excited by the resonator are inhibited.

[0021] In an implementable manner, in the 4H-SiC substrate or the 6H-SiC substrate, the crystal cutting angle and the propagation direction are X-cut, (40°≤γ≤55°) Y-propagation direction; or the crystal cutting angle and the propagation direction are X-cut, (125°≤γ≤140°) Y-propagation direction; or the crystal cutting angle and the propagation direction are Y-cut, (40°≤γ≤55°) X-propagation direction; or the crystal cutting angle and the propagation direction are Y-cut, (125°≤γ≤140°) X-propagation direction.

[0022] In the 4H-SiC substrate or the 6H-SiC substrate, when the cutting angle and the propagation direction of the crystal are selected from the range of the above examples, the substrate can have the maximum horizontal shear wave velocity or the maximum vertical shear wave velocity in the first direction, and the acoustic radiation and energy leakage of the piezoelectric thin film shear bulk acoustic wave excited by the resonator are inhibited.

[0023] In an implementable manner, the substrate includes a 3C-SiC substrate.

[0024] in,

[0025] This can be understood as follows: When the substrate includes a 3C-SiC substrate, if the first shear wave velocity V01 of the first material and the shear wave velocity V1 of the substrate in the first direction satisfy the above conditions, the substrate has the maximum horizontal shear wave velocity or the maximum vertical shear wave velocity. In this way, the leakage of the component of the acoustic energy of the resonator in the SH mode or SV mode direction into the substrate is suppressed.

[0026] In one feasible manner, the Euler angles of the crystal in the 3C-SiC substrate are (α, β, γ);

[0027] 0°≤α≤22.5°, 67.5°≤α≤112.5° or 157.5°≤α≤180°, 0°≤β≤180°, 0°≤γ≤7.5° or 172.5°≤γ≤180°;

[0028] or;

[0029] 22.5°≤α≤67.5° or 112.5°≤α≤157.5°, 22.5°≤β≤157.5°, 0°≤γ≤7.5° or 172.5°≤γ≤180°;

[0030] or;

[0031] 0°≤α≤7.5°, 82.5°≤α≤97.5° or 172.5°≤α≤180°, 0°≤β≤22.5°, 67.5°≤β≤112.5° or 157.5°≤β≤180°, 7.5°≤γ≤22.5° or 157.5°≤γ≤172.5°;

[0032] or;

[0033] 7.5°≤α≤22.5°, 97.5°≤α≤112.5°, 67.5°≤α≤82.5°, 157.5°≤α≤172.5°, 127.5°≤β≤180°, 7.5°≤γ≤22.5° or 157.5°≤γ≤172.5°;

[0034] or;

[0035] 67.5°≤α≤82.5°, 157.5°≤α≤172.5°, 7.5°≤α≤22.5° or 97.5°≤α≤112.5°, 0°≤β≤52.5°, 7.5°≤γ≤22.5° or 157.5°≤γ≤172.5°;

[0036] or;

[0037] 22.5° < a < 37.5°, 112.5° < a < 127.5°, 52.5° < a < 67.5° or 142.5° < a < 157.5°, 172.5° < β < 180°, 7.5° < γ < 22.5° or 157.5° < γ < 172.5°;

[0038] or;

[0039] 52.5° < a < 67.5°, 142.5° < a < 157.5°, 22.5° < a < 37.5° or 112.5° < a < 127.5°, 0° < β < 7.5°, 7.5° < γ < 22.5° or 157.5° < γ < 172.5°;

[0040] or;

[0041] 7.5° < a < 22.5°, 97.5° < a < 112.5°, 67.5° < a < 82.5° or 157.5° < a < 172.5°, 112.5° < β < 127.5° or 172.5° < β < 180°, 22.5° < γ < 37.5° or 142.5° < γ < 157.5°;

[0042] or;

[0043] 67.5° < a < 82.5°, 157.5° < a < 172.5°, 7.5° < a < 22.5° or 97.5° < a < 112.5°, 0° < β < 7.5° or 52.5° < β < 67.5°, 22.5° < γ < 37.5° or 142.5° < γ < 157.5°;

[0044] or;

[0045] 22.5° < a < 37.5°, 112.5° < a < 127.5°, 52.5° < a < 67.5° or 142.5° < a < 157.5°, 142.5° < β < 180°, 22.5° < γ < 37.5° or 142.5° < γ < 157.5°;

[0046] or;

[0047] 52.5° < a < 67.5°, 142.5° < a < 157.5°, 22.5° < a < 37.5° or 112.5° < a < 127.5°, 0° < β < 37.5°, 22.5° < γ < 37.5° or 142.5° < γ < 157.5°;

[0048] or;

[0049] 37.5° < α < 52.5°, 127.5° < α < 142.5°, 37.5° < α < 52.5° or 127.5° < α < 142.5°, 0° < β < 7.5° or 172.5° < β < 180°, 22.5° < γ < 37.5° or 142.5° < γ < 157.5°;

[0050] or;

[0051] 22.5° < α < 37.5°, 52.5° < α < 67.5°, 112.5° < α < 127.5° or 142.5° < α < 157.5°, 0° < β < 7.5° or 172.5° < β < 180°, 37.5° < γ < 52.5° or 127.5° < γ < 142.5°;

[0052] 37.5° < α < 52.5° or 127.5° < α < 142.5°, 0° < β < 37.5° or 142.5° < β < 180°, 37.5° < γ < 52.5° or 127.5° < γ < 142.5°;

[0053] or;

[0054] 22.5° < α < 37.5°, 112.5° < α < 127.5°, 52.5° < α < 67.5° or 142.5° < α < 157.5°, 0° < β < 37.5°, 52.5° < γ < 67.5° or 112.5° < γ < 127.5°;

[0055] or;

[0056] 52.5° < α < 67.5°, 142.5° < α < 157.5°, 22.5° < α < 37.5° or 112.5° < α < 127.5°, 142.5° < β < 180°, 52.5° < γ < 67.5° or 112.5° < γ < 127.5°;

[0057] or;

[0058] 37.5° < α < 52.5°, 127.5° < α < 142.5°, 37.5° < α < 52.5° or 127.5° < α < 142.5°, 0° < β < 7.5°, 52.5° < β < 67.5°, 112.5° < β < 127.5° or 172.5° < β < 180°, 52.5° < γ < 67.5° or 112.5° < γ < 127.5°;

[0059] or;

[0060] 7.5° < a < 22.5°, 97.5° < a < 112.5°, 67.5° < a < 82.5° or 157.5° < a < 172.5°, 0° < β < 52.5° or 82.5° < β < 97.5°, 67.5° < γ < 82.5° or 97.5° < γ < 112.5°;

[0061] or;

[0062] 67.5° < a < 82.5°, 157.5° < a < 172.5°, 7.5° < a < 22.5° or 97.5° < a < 112.5°, 172.5° < β < 180°, 52.5° < γ < 67.5° or 112.5° < γ < 127.5°;

[0063] or;

[0064] 0° < a < 7.5°, 82.5° < a < 97.5° or 172.5° < a < 180°, 0° < β < 7.5°, 82.5° < β < 97.5° or 172.5° < β < 180°, 67.5° < γ < 82.5° or 97.5° < γ < 112.5°;

[0065] or;

[0066] 7.5° < a < 22.5°, 97.5° < a < 112.5°, 67.5° < a < 82.5° or 157.5° < a < 172.5°, 0° < β < 52.5° or 82.5° < β < 97.5°, 67.5° < γ < 82.5° or 97.5° < γ < 112.5°;

[0067] or;

[0068] 67.5° < a < 82.5°, 157.5° < a < 172.5°, 7.5° < a < 22.5° or 97.5° < a < 112.5°, 127.5° < β < 180° or 82.5° < β < 97.5°, 67.5° < γ < 82.5° or 97.5° < γ < 112.5°;

[0069] or;

[0070] 22.5° < a < 37.5°, 112.5° < a < 127.5°, 52.5° < a < 67.5° or 142.5° < a < 157.5°, 0° < β < 7.5° or 52.5° < β < 67.5°, 67.5° < γ < 82.5° or 97.5° < γ < 112.5°;

[0071] or;

[0072] 52.5° < a < 67.5°, 142.5° < a < 157.5°, 112.5° < a < 127.5° or 22.5° < a < 37.5°, 112.5° < β < 127.5° or 172.5° < β < 180°, 67.5° < γ < 82.5° or 97.5° < γ < 112.5°;

[0073] or;

[0074] 37.5° < a < 52.5° or 127.5° < a < 142.5°, 67.5° < β < 82.5° or 97.5° < β < 112.5°, 67.5° < γ < 82.5° or 97.5° < γ < 112.5°;

[0075] or;

[0076] 0° < a < 7.5°, 82.5° < a < 97.5° or 172.5° < a < 180°, 0° < β < 180°, 82.5° < γ < 97.5°;

[0077] or;

[0078] 7.5° < a < 22.5°, 67.5° < a < 82.5°, 97.5° < a < 112.5° or 157.5° < a < 172.5°, 0° < β < 7.5°, 67.5° < β < 112.5° or 172.5° < β < 180°, 82.5° < γ < 97.5°;

[0079] or;

[0080] 22.5° < a < 67.5° or 112.5° < a < 157.5°, 82.5° < β < 97.5°, 82.5° < γ < 97.5°.

[0081] When the Euler angles of the crystal are selected in the ranges of the above examples, the substrate can have the maximum horizontal shear wave speed or the maximum vertical shear wave speed in the first direction, and the acoustic radiation and energy leakage of the piezoelectric thin film shear bulk acoustic wave excited by the resonator can be suppressed.

[0082] In one implementation, the crystal cut angle and propagation direction in the 3C-SiC substrate are X-cut, (0°≤γ≤22.5°, 67.5°≤γ≤112.5°, 157.5°≤γ≤180°) Y propagation direction, or; the crystal cut angle and propagation direction are Y-cut, (0°≤γ≤22.5°, 67.5°≤γ≤112.5°, 157.5°≤γ≤180°) X propagation direction, or; the crystal cut angle and propagation direction are Z-cut, (0°≤γ≤22.5°, 67.5°≤γ≤112.5°, 157.5°≤γ≤180°) X propagation direction.

[0083] In one implementation, the resonator includes a bulk acoustic wave resonator or a surface acoustic wave resonator.

[0084] For example, the resonator can be a YBAR, XBAR or LLSAW device.

[0085] In one implementation, the resonator further includes a bottom electrode stacked between the piezoelectric layer and the substrate. The resonator with such a structure can be referred to as a YBAR.

[0086] In a second aspect, the present application provides a resonator. In one embodiment, the resonator can be an acoustic wave resonator, such as a YBAR, XBAR or LLSAW device.

[0087] The resonator includes a substrate, a piezoelectric layer stacked on the substrate, and a plurality of interdigital electrodes located on a side of the piezoelectric layer facing away from the substrate, the plurality of interdigital electrodes being arranged side by side along a first direction parallel to a surface of the substrate; the substrate includes a second material having a second shear wave speed V02, V02 = max(min{V SH ,V SV}), V SH is a horizontal shear wave speed of the second material in any one direction, V SV is a vertical shear wave speed of the second material in any one direction;

[0088] The substrate has a shear wave speed V2 in the first direction, V2 = min{V SH_x ,V SV_x}), V SH_x is a horizontal shear wave speed of the surface of the substrate in the first direction, V SV_x is a vertical shear wave speed of the surface of the substrate in the first direction;

[0089] wherein,

[0090] In the resonator of this application example, the shear wave velocity V2 of the substrate in the first direction (the arrangement direction of the multiple interdigitated electrodes) satisfies... Furthermore, V2 = min{V SH_c V SV_x This can be understood as: the maximum horizontal shear wave velocity and the maximum vertical shear wave velocity of the substrate in the first direction satisfy... In this way, the horizontal and vertical shear waves have a large sound velocity in the first direction of the substrate, which can suppress the leakage of the acoustic energy components of the resonator in the SH and SV modes into the substrate, thereby improving the electromechanical coupling coefficient and quality factor of the device and optimizing the device performance.

[0091] In one possible implementation, the substrate includes at least one of a 4H-SiC substrate, a 6H-SiC substrate, or a 3C-SiC substrate.

[0092] In one possible implementation, the substrate includes at least one of a 4H-SiC substrate or a 6H-SiC substrate;

[0093] in,

[0094] This can be understood as follows: when the substrate includes at least one of 4H-SiC substrate or 6H-SiC substrate, and the second shear wave velocity V02 of the second material and the shear wave velocity V2 of the substrate in the first direction satisfy the above conditions, the substrate has the maximum horizontal shear wave velocity and the maximum vertical shear wave velocity, thus suppressing the leakage of the components of the acoustic energy of the resonator in the SH mode and SV mode directions into the substrate.

[0095] In one possible implementation, the Euler angles of the crystal in a 4H-SiC substrate or a 6H-SiC substrate are (α, β, γ); 0°≤α≤180°, 55°≤β≤125°, 20°≤γ≤30°; or; 0°≤α≤180°, 55°≤β≤120°, 150°≤γ≤160°.

[0096] In a 4H-SiC or 6H-SiC substrate, when the Euler angle of the crystal is selected within the range of the examples above, the substrate can have the maximum horizontal shear wave velocity and the maximum vertical shear wave velocity in the first direction, thereby suppressing the acoustic radiation and energy leakage of the piezoelectric thin film shear body acoustic wave excited by the resonator.

[0097] In an implementable manner, the crystal cutting angle and the propagation direction are X-cut, (20°≤γ≤30°) Y propagation direction; or, the crystal cutting angle and the propagation direction are X-cut, (150°≤γ≤160°) Y propagation direction; or, the crystal cutting angle and the propagation direction are Y-cut, (20°≤γ≤30°) X propagation direction; or, the crystal cutting angle and the propagation direction are Y-cut, (150°≤γ≤160°) X propagation direction.

[0098] In the 4H-SiC substrate or the 6H-SiC substrate, when the crystal cutting angle and the propagation direction are selected in the range of the above examples, the substrate can have the maximum horizontal shear wave speed and the maximum vertical shear wave speed in the first direction, and the acoustic radiation and energy leakage of the shear bulk acoustic wave of the piezoelectric thin film excited by the resonator are inhibited.

[0099] In an implementable manner, the substrate includes a 3C-SiC substrate;

[0100] wherein,

[0101] It can be understood that, in the case that the substrate includes a 3C-SiC substrate, when the second shear wave speed V02 of the second material and the shear wave speed V2 of the substrate in the first direction satisfy the above condition, the substrate has the maximum horizontal shear wave speed and the maximum vertical shear wave speed, so that the components of the acoustic wave energy of the resonator in the SH mode and the SV mode are inhibited from leaking into the substrate.

[0102] In an implementable manner, in the 3C-SiC substrate, the Euler angle of the crystal is (0±7.5°, 45±7.5°, 0±7.5°), (0±7.5°, 45±7.5°, 180±7.5°), (90±7.5°, 45±7.5°, 0±7.5°), (90±7.5°, 45±7.5°, 180±7.5°), (180±7.5°, 45±7.5°, 0±7.5°), (180±7.5°, 45±7.5°, 180±7.5°), (0±7.5°, 135±7.5°, 0±7.5°), (0±7.5°, 135±7.5°, 180±7.5°), (90±7.5°, 135±7.5°, 0±7.5°), (90±7.5°, 135±7.5°, 180±7.5°), (45±7.5°, 90±7.5°, 90±7.5°), (135±7.5°, 90±7.5°, 90±7.5°), (180±7.5°, 135±7.5°, 0±7.5°), or (180±7.5°, 135±7.5°, 180±7.5°).

[0103] In an implementable manner, in the 3C-SiC substrate, the crystal cutting angle and the propagation direction are 45° Y-cut and X propagation direction.

[0104] In an implementable manner, the resonator comprises a bulk acoustic wave resonator or a surface acoustic wave resonator.

[0105] For example, the resonator can be a YBAR, XBAR or LLSAW device.

[0106] In an implementable manner, the resonator further comprises a bottom electrode stacked between the piezoelectric layer and the substrate. The resonator of such a structure can be referred to as a YBAR.

[0107] In a third aspect, the present application further provides a chip, which can comprise a plurality of electrically connected resonators, at least one of the plurality of resonators can be the resonator as described above. For example, the chip can be a filter.

[0108] Since the chip provided by the present application comprises the resonator of the implementation structure described above, and in the chip, the component of the acoustic wave energy in the SH mode or SV mode direction can be suppressed from leaking into the substrate, thereby improving the electromechanical coupling coefficient and the quality factor of the device and optimizing the performance of the device.

[0109] In a fourth aspect, the present application further provides a duplexer, which comprises a transmit channel filter and a receive channel filter, at least one of the transmit channel filter and the receive channel filter can be filtered by the filter as described above.

[0110] In a fifth aspect, the present application further provides a multiplexer, which comprises a plurality of transmit channel filters and a plurality of receive channel filters, at least one of the plurality of transmit channel filters or at least one of the plurality of receive channel filters can be the filter as described above.

[0111] In a sixth aspect, the present application further provides an electronic device, which comprises an amplifier, and the filter, the duplexer or the multiplexer in the implementable manner described above, the filter, the duplexer or the multiplexer can be electrically connected to the amplifier.

[0112] The electronic device provided by the embodiments of the present application comprises the filter, the duplexer or the multiplexer described above, and therefore the electronic device provided by the embodiments of the present application can solve the same technical problems and achieve the same expected effects as the filter, the duplexer or the multiplexer of the technical solutions described above. BRIEF DESCRIPTION OF DRAWINGS

[0113] FIG. 1 is a schematic diagram of part of the structure of an electronic device;

[0114] FIG. 2 is a schematic diagram of part of the structure of an electronic device;

[0115] FIG. 3 is a schematic diagram of a partial structure of a filter in an electronic device;

[0116] FIG. 4 shows a schematic diagram of a partial structure of a resonator according to an embodiment of the present application;

[0117] FIG. 5 shows a schematic diagram of a partial structure of a resonator according to an embodiment of the present application;

[0118] FIG. 6 shows a schematic diagram of a partial structure of a resonator according to an embodiment of the present application;

[0119] FIG. 7 shows a top view of a resonator according to an embodiment of the present application;

[0120] FIG. 8 shows a plot of an admittance curve of a resonator according to the related art;

[0121] FIG. 9 shows a plot of a displacement distribution of a resonator according to the related art;

[0122] FIG. 10 shows a plot of an admittance curve of a resonator according to the related art;

[0123] FIG. 11 shows a plot of a displacement distribution of a resonator according to the related art;

[0124] FIG. 12 shows a crystal structure diagram of a 4H-SiC substrate, a 6H-SiC substrate, and a 3C-SiC substrate;

[0125] FIG. 13 shows a plot of an angle range of a crystal orientation of a 4H-SiC substrate or a 6H-SiC substrate according to an embodiment of the present application;

[0126] FIG. 14 shows a plot of an admittance curve of a resonator according to an embodiment of the present application;

[0127] FIG. 15 shows a plot of an admittance curve of a resonator according to the related art;

[0128] FIG. 16 shows a plot of an admittance curve of a resonator according to the related art;

[0129] FIG. 17 shows a plot of a slowness curve of a resonator according to an embodiment of the present application;

[0130] FIG. 18 shows a plot of an angle range of a crystal orientation of a 4H-SiC substrate or a 6H-SiC substrate according to an embodiment of the present application;

[0131] FIG. 19 shows a plot of an admittance curve of a resonator according to an embodiment of the present application;

[0132] FIG. 20 shows a plot of a slowness curve of a resonator according to the related art;

[0133] Figure 21 shows a graph of the slowness of sound of a resonator according to an embodiment of the application;

[0134] Figure 22 shows a structure of a filter according to an embodiment of the application;

[0135] Figure 23 shows the admittance curves of the resonators in Figure 22 and the filter passband. DETAILED DESCRIPTION

[0136] Before introducing the structure that can be implemented by the embodiments of the application, the technical terms involved in the embodiments of the application are introduced.

[0137] Piezoelectric effect: includes positive piezoelectric effect and inverse piezoelectric effect. The positive piezoelectric effect refers to the change of the electric polarization of the piezoelectric material when the piezoelectric material is subjected to mechanical force. The inverse piezoelectric effect refers to the deformation of the material when an external electric field is applied to the piezoelectric material. The piezoelectric effect is mainly caused by the anisotropy of the crystal structure of the piezoelectric material and the polarization effect.

[0138] Main resonance mode, spurious mode: The spurious resonance frequency of the resonator can be close to the main resonance frequency. The spurious resonance can affect the main resonance mode, and further affect the in-band insertion loss performance and out-of-band rejection performance of the filter. The spurious resonance of the resonator is usually referred to as a spurious mode. When the spurious mode falls near the main resonance mode, for example, falls near the resonance point and anti-resonance point of the main resonance mode, the in-band insertion loss performance and the out-of-band rejection performance of the filter are affected.

[0139] Electromechanical coupling coefficient (Piezoelectric coupling factor) Kt 2 : is a key parameter of the resonator. The electromechanical coupling coefficient Kt 2 of the resonator can reflect the conversion efficiency between mechanical energy and electrical energy. The electromechanical coupling coefficient Kt 2 of the resonator determines the relative frequency width of the anti-resonance frequency and the resonance frequency. For example, when the resonator is used in filter design, the relative frequency width directly determines the bandwidth of the filter. It can be considered that the larger the electromechanical coupling coefficient Kt 2 , the greater the bandwidth of the filter built by the ladder structure, and the better the performance.

[0140] Euler angle of piezoelectric material: Euler angle represents the spatial orientation relationship (α, β, γ) of the piezoelectric material (XYZ axis) relative to the original piezoelectric crystal structure (xyz axis). Among them, α (precession angle) is the included angle between the x axis and the intersection line, β (nutation angle) is the included angle between the z axis and the Z axis, and γ (spin angle) is the included angle between the intersection line and the X axis.

[0141] Admittance: In power electronics, admittance is defined as the inverse of impedance, symbol Y, unit is siemens, abbreviated as S. Like impedance, admittance is also a complex number, consisting of a real part (conductance G) and an imaginary part (susceptance B): Y = G + jB.

[0142] Admittance curve abs and admittance curve Re: Admittance curve abs (Y) = |Y|, the modulus (also amplitude) of Y, represents the overall response of the resonator. Re (Y) is the real part of Y, that is, the conductance G, which represents the loss of the resonator.

[0143] Quality factor (Quality Factor) Q: represents the energy utilization rate of the device, that is, the ratio of the total energy received by the device to the energy dissipated in one vibration period. In the design of the filter, the electromechanical coupling coefficient Kt 2 The quality factor Q value is also an important parameter.

[0144] Embodiments of the present application provide an electronic device, which includes but is not limited to radio frequency front end, filter amplification module and the like products, and can also include mobile phone, pad, smart wearable product (for example, smart watch, smart bracelet), virtual reality (VR) equipment, augmented reality (AR), unmanned aerial vehicle and the like terminal equipment, or can also be base station, television, router, automobile and the like equipment. Embodiments of the present application do not specially limit the specific form of the above electronic device.

[0145] In the electronic device such as the above, as shown in FIG. 1, the electronic device 100 can include a filter 200, which can effectively filter out the frequency point of a specific frequency or the frequency other than the frequency point in the signal, obtain a signal of a specific frequency, or eliminate a signal after a specific frequency, so as to improve the working performance of the electronic device 100.

[0146] FIG. 2 shows a partial circuit diagram in some electronic devices 100. As shown in FIG. 2, the electronic device 100 includes a receiver 600, a transmitter 700, an antenna 500 and a baseband chip 800. The antenna 500 is electrically connected with the receiver 600 and the transmitter 700 through a switch 900, and the receiver 600 and the transmitter 700 are electrically connected with the baseband chip 800, respectively.

[0147] In the receiver 600 shown in FIG. 2, a filter 60a and a filter 60c are included, and a low noise amplifier 60b is electrically connected between the filter 60a and the filter 60c. The filter 60c is electrically connected to a buffer 60e through a mixer 60d, and the buffer 60e is electrically connected to a voltage controlled oscillator 60f. FIG. 2 is only an exemplary receiver, and electronic devices can be added or removed based on the circuit structure.

[0148] In the transmitter 700 shown in FIG. 2, a power amplifier (PA) 70b is included, and the power amplifier 70b is electrically connected to a filter 70a and a driver 70c, respectively. The driver 70c is electrically connected to a voltage controlled oscillator 70d. Similarly, FIG. 2 is only an exemplary transmitter, and electronic devices can be added or removed based on the circuit structure.

[0149] For example, in the transmitter 700 shown in FIG. 2, the filter can effectively filter out a specific frequency point amplified by the power amplifier or a frequency other than the frequency point, or the filter can filter out noise of the low noise amplifier.

[0150] For another example, as shown in FIG. 3, the filter 200 can include a plurality of resonators 300 connected in series, or a plurality of resonators 300 connected in parallel, or a combination of resonators 300 connected in series and in parallel.

[0151] At least one of the plurality of resonators included in the filter 200 can be the resonator shown in FIG. 4, or at least one of the plurality of resonators included in the filter 200 can be the resonator shown in FIG. 5.

[0152] As shown in FIG. 4, FIG. 4 shows a partial process structure diagram of a resonator. The resonator includes a substrate 10, a plurality of interdigital electrodes 20, a piezoelectric layer 30, and a bottom electrode 40, which are disposed on the substrate 10. The plurality of interdigital electrodes 20 are arranged side by side, the piezoelectric layer 30 has a first side and a second side, the plurality of interdigital electrodes 20 are located on the first side, and the bottom electrode 40 is located on the second side, wherein the first side faces away from the substrate 10, and the second side faces toward the substrate 10. For example, as shown in FIG. 4, the bottom electrode 40 is stacked on the substrate 10, the piezoelectric layer 30 is stacked on the bottom electrode 40, and the plurality of interdigital electrodes 20 are arranged side by side on the piezoelectric layer 30.

[0153] The structure shown in FIG. 4 can be used for a bulk acoustic resonator, which mainly works on the principle of piezoelectric effect of a piezoelectric material, and uses input and output transducers to convert an input electrical signal into mechanical energy, and then converts the mechanical energy into an electrical signal after processing, to achieve the goal of filtering unnecessary signals and noise, and improving reception quality.

[0154] In operation, the resonator shown in FIG. 4 does not connect the bottom electrode 40 to an electrical signal, and applies an alternating voltage of a certain frequency to the interdigital electrode 20, so that an electric field E is generated between the interdigital electrode 20 and the bottom electrode 40 in the thickness direction of the piezoelectric layer 30, and the piezoelectric layer 30 uses the electric field to form a piezoelectric effect. The example shown in FIG. 4 uses a vertical electric field E to excite the piezoelectric layer 30 to resonate, thereby converting between electrical energy and mechanical energy.

[0155] The resonator shown in FIG. 4 is excited in the thickness direction of the piezoelectric layer 30, and in one embodiment can be referred to as a vertically-excited bulk acoustic resonator (YBAR). The thickness direction of the piezoelectric layer 30 here can be understood as the direction of the piezoelectric layer 30 parallel to the stacking direction of the plurality of film layers (substrate and piezoelectric layer).

[0156] As shown in FIG. 5, FIG. 5 shows part of a process structure diagram of another resonator. The resonator includes a substrate 10, a plurality of interdigital electrodes 20, and a piezoelectric layer 30. The plurality of interdigital electrodes 20 are arranged side by side, the piezoelectric layer 30 has a first side and a second side, the plurality of interdigital electrodes 20 are located on the first side, and the substrate 10 is located on the second side. In one embodiment, the structure shown in FIG. 5 can be referred to as a horizontally-excited bulk acoustic resonator (XBAR).

[0157] As shown in FIG. 6, FIG. 6 shows part of a process structure diagram of another resonator. The resonator includes a substrate 10, a plurality of interdigital electrodes 20, and a piezoelectric layer 30. The plurality of interdigital electrodes 20 are arranged side by side, the piezoelectric layer 30 has a first side and a second side, the plurality of interdigital electrodes 20 are located on the first side, and the substrate 10 is located on the second side. In one example, the structure shown in FIG. 6 can be referred to as a longitudinal leaky surface acoustic wave resonator (LLSAW).

[0158] In the different resonators illustrated in FIG. 4, FIG. 5 and FIG. 6, a dielectric layer can be further included. For example, in FIG. 4, a dielectric layer can be stacked between the bottom electrode 40 and the substrate 10. For another example, in FIG. 5 and FIG. 6, a dielectric layer can be stacked between the piezoelectric layer 30 and the substrate 10.

[0159] In the resonators illustrated in FIG. 4 and FIG. 5, and FIG. 6, the plurality of interdigital electrodes 20 includes a plurality of first interdigital electrodes 201 and a plurality of second interdigital electrodes 202. For example, as illustrated in FIG. 7, which is a top view of the structure illustrated in FIG. 4, FIG. 5 or FIG. 6, the plurality of first interdigital electrodes 201 and the plurality of second interdigital electrodes 202 can be arranged side by side along a direction (e.g., the X direction in FIG. 7) perpendicular to the extending direction (e.g., the Y direction in FIG. 7) of the first interdigital electrodes 201, and the plurality of first interdigital electrodes 201 and the plurality of second interdigital electrodes 202 are arranged in an alternating manner, i.e., one second interdigital electrode 202 can be arranged between two adjacent first interdigital electrodes 201, and one first interdigital electrode 201 can be arranged between two adjacent second interdigital electrodes 202. Alternatively, the first interdigital electrodes 201 and the second interdigital electrodes 202 are spaced apart in the first direction, and the extending direction of the first interdigital electrodes 201 and / or the second interdigital electrodes 202 is perpendicular to the first direction.

[0160] As illustrated in FIG. 7, it can be understood that the plurality of first interdigital electrodes 201 and the plurality of second interdigital electrodes 202 are arranged in an alternating manner in the X direction, and each of the first interdigital electrodes 201 and the second interdigital electrodes 202 extends in the Y direction.

[0161] The plurality of first interdigital electrodes 201 are connected by a first bus bar 501, and the plurality of second interdigital electrodes 202 are connected by a second bus bar 502. For example, the first bus bar 501 and the second bus bar 502 are arranged in parallel, and the first bus bar 501 and the second bus bar 502 both extend along a direction perpendicular to the extending direction of the first interdigital electrodes 201 or the second interdigital electrodes 202, as illustrated in FIG. 7, the first bus bar 501 and the second bus bar 502 extend along the X direction.

[0162] FIG. 4 and FIG. 5 are a piezoelectric thin film shear bulk acoustic wave resonator excited by the interdigital electrodes 20, and the shear bulk acoustic wave in the piezoelectric thin film shear bulk acoustic wave resonator is excited by the plurality of first interdigital electrodes 201 and the plurality of second interdigital electrodes 202 by an alternating electric field.

[0163] The piezoelectric thin film shear bulk acoustic wave resonator has a main resonance mode caused by shear wave vibration, and the main resonance mode can include a shear horizontal mode (SH mode) or a shear vertical mode (SV mode).

[0164] In the SH mode, the vibration direction is parallel to the surface of the substrate and parallel to the extension direction of the first interdigital electrode 201 or the second interdigital electrode 202, as shown in FIG. 4 and FIG. 5, which can be understood as the vibration direction of the SH mode along the Y direction of FIG. 4 and FIG. 5. In the SV mode, the vibration direction is perpendicular to the surface of the substrate, as shown in FIG. 4 and FIG. 5, which can be understood as the vibration direction of the SV mode along the Z direction of FIG. 4 and FIG. 5.

[0165] The wave of the SH mode can be referred to as a horizontal shear wave (SH), and the wave of the SV mode can be referred to as a vertical shear wave (SV).

[0166] FIG. 6 shows a piezoelectric thin film longitudinal acoustic wave resonator. For example, the main resonance mode can include a longitudinal mode (L mode), and the wave of the L mode can be referred to as a longitudinal wave.

[0167] In the L mode, the vibration direction is parallel to the surface of the substrate and parallel to the arrangement direction of the plurality of interdigital electrodes 20, as shown in FIG. 6, which can be understood as the vibration direction of the L mode along the X direction of FIG. 6.

[0168] In the piezoelectric thin film shear bulk acoustic wave resonator and the piezoelectric thin film longitudinal acoustic wave resonator shown in FIG. 4 to FIG. 6, the piezoelectric layer is completely arranged on the substrate, rather than partially suspended and partially arranged on the substrate. In this way, the piezoelectric layer completely arranged on the substrate can improve the device firmness, the device heat dissipation, and the power tolerance, and optimize the device performance.

[0169] In the substrates of different resonators in the above examples, the shear wave (such as the SH mode and the SV mode) acoustic wave speed is less than the longitudinal wave (such as the L mode) acoustic wave speed, so that the related shear direction component is preferentially leaked, resulting in a poor resonator device Q value.

[0170] In the examples of the present application, by providing some substrate crystal orientation ranges, the substrate material shear bulk wave acoustic wave speed can be effectively improved, and then the device shear bulk wave leakage cutoff frequency is improved, and the device Q value is improved.

[0171] In some examples, as shown in FIG. 7, the resonator causes a shear acoustic wave, and the pitch P of the interdigital electrode satisfies: wherein Vs is the shear bulk wave acoustic wave speed of the substrate, and f is the working frequency of the resonator.

[0172] The pitch P can be understood as shown in FIG. 7, the width of each first interdigital electrode 201 is s1, the pitch S2 between each adjacent two first interdigital electrodes 201 and the second interdigital electrode 202 is s2, and the pitch P is the sum of the width s1 and the pitch S2.

[0173] In some examples, the width dimension s1 of the plurality of first interdigital electrodes 201 has a process tolerance, and the spacing s2 between the adjacent two first interdigital electrodes 201 and the second interdigital electrode 202 also has a process tolerance.

[0174] Based on For example, when 2fP < Vs, the acoustic wave cannot propagate in the substrate, that is, when the bulk acoustic wave velocity generated by the resonator is less than the wave velocity of sound propagation in the substrate, the acoustic wave cannot propagate in the substrate, and the leakage of the acoustic wave and its energy on the substrate is inhibited.

[0175] Due to the anisotropy of the substrate, the SH mode and the SV mode have different bulk wave propagation speeds in the substrate. For example, when the operating frequency of the resonator is higher than the cutoff frequency of the SH mode or higher than the cutoff frequency of the SV mode, the acoustic wave will radiate and leak into the substrate, which reduces the electromechanical coupling coefficient and the quality factor of the device, and affects the performance of the device.

[0176] For example, as shown in FIGS. 8 and 9, FIG. 8 illustrates a plot of the admittance curve when the main resonance SH mode of the resonator leaks when the Euler angle of the 4H-SiC substrate is (0°, 90°, 0°), and FIG. 9 illustrates a plot of the displacement distribution when the main resonance SH mode of the resonator leaks when the Euler angle of the 4H-SiC substrate is (0°, 90°, 0°).

[0177] As shown in the admittance curve of FIG. 8, when the operating frequency of the resonator is higher than the SH wave cutoff frequency of the substrate, for example, higher than 5.1 GHz, as shown in the displacement distribution plot of FIG. 9, the acoustic energy of the main resonance mode SH mode radiates into the substrate, which seriously reduces the quality factor Q value of the device. As shown in the left plot of FIG. 9, the dashed line schematically shows that the acoustic energy of the SH mode radiates into the substrate, thereby seriously affecting the performance of the device, and as shown in the right plot of FIG. 9, the dashed line schematically shows that the acoustic energy of the SV mode does not substantially radiate into the substrate.

[0178] For another example, as shown in FIGS. 10 and 11, FIG. 10 illustrates a plot of the admittance curve when the SV mode of the resonator leaks when the Euler angle of the 4H-SiC substrate is (0°, 0°, 0°), and FIG. 11 illustrates a plot of the displacement distribution when the SV mode of the resonator leaks when the Euler angle of the 4H-SiC substrate is (0°, 0°, 0°).

[0179] As shown in the admittance curve of FIG. 10, when the operating frequency of the resonator is higher than the substrate SV wave cutoff frequency, such as 5.1 GHz higher than the SV wave cutoff frequency, the acoustic energy of the resonant mode SV mode is radiated into the substrate, as shown in the displacement distribution diagram of FIG. 11, which causes the quality factor Q value of the device to decrease significantly, resulting in poor device performance. As shown in the left diagram of FIG. 11, the dashed line schematically shows that the acoustic energy of the SV mode is radiated into the substrate, which seriously affects the device performance. As shown in the right diagram of FIG. 11, the dashed line schematically shows that the acoustic energy of the SH mode is not radiated into the substrate.

[0180] In the examples of the present application, the cutoff frequency f SH It can be understood that: V SH_x is the horizontal shear bulk wave velocity of the substrate surface in the first direction, and P is the pitch; the cutoff frequency f SV It can be understood that: V SV_x is the vertical shear bulk wave velocity of the substrate surface in the first direction, and P is the pitch. The first direction of the examples of the present application is parallel to the arrangement direction of the plurality of interdigital electrodes.

[0181] Based on the examples of FIG. 9 and FIG. 11, it can be known that the component of the acoustic wave energy in the direction of the SH mode or the SV mode is leaked into the substrate, which reduces the electromechanical coupling coefficient and the quality factor of the device.

[0182] In order to suppress the acoustic wave leakage into the substrate, the present application provides some implementable manners, as described below.

[0183] The substrate of the examples of the present application includes silicon carbide. In some examples, the substrate can include at least one of 4H-SiC, 3C-SiC or 6H-SiC.

[0184] The SiC substrate of the above examples is composed of Si atoms and C atoms, and has the characteristics of polymorphism, such as 3C-SiC having a cubic zinc blende structure, 4H-SiC and 6H-SiC having a hexagonal wurtzite structure. FIG. 12 respectively shows the crystal structures of 4H-SiC, 3C-SiC and 6H-SiC.

[0185] The examples of the present application can improve the shear bulk wave velocity of the substrate by limiting the crystal orientation of the substrate 10, and suppress the acoustic wave radiation and leakage into the substrate.

[0186] In some examples, the substrate 10 can include a first material having a first shear wave velocity V01, V01 = max(max{V SH ,V SV}), V SHV01 is the horizontal shear wave velocity of the first material of the substrate in any one direction. SV V01 is the vertical shear wave velocity of the first material of the substrate in any one direction.

[0187] In the resonator, the substrate has a shear wave velocity V1 in the first direction, V1 = max{V SH_x ,V SV_x}, V SH_x V01 is the horizontal shear wave velocity of the surface of the substrate in the first direction. SV_x V01 is the vertical shear wave velocity of the surface of the substrate in the first direction.

[0188] wherein,

[0189] The substrate 10 can include a first material, the first material having a first shear wave velocity V01, V01 = max{max{V SH ,V SV}, V SH V01 is the horizontal shear wave velocity of the first material in any one direction (including any one direction parallel to the surface of the substrate), V SV V01 is the vertical shear wave velocity of the first material in any one direction (including any one direction parallel to the surface of the substrate). It can be understood as follows:

[0190] For example: the first material of the substrate has a horizontal shear wave velocity and a vertical shear wave velocity in the first direction, a horizontal shear wave velocity and a vertical shear wave velocity in the second direction, and a horizontal shear wave velocity and a vertical shear wave velocity in the Nth direction; the maximum value of the horizontal shear wave velocity and the vertical shear wave velocity in each direction is determined; and the maximum value of all direction maximum values is taken to obtain V01.

[0191] In the example of the present application, the shear wave velocity V1 of the substrate in the first direction = max{V SH_x ,V SV_x}. That is, the maximum velocity of the substrate in the first direction can be the maximum SH modal wave velocity, or the maximum velocity of the substrate in the first direction can be the maximum SV modal wave velocity. The following exemplarily explains V1 = max{V SH_x ,V SV_x}.

[0192] For example: the horizontal shear wave velocity V SH_c of the surface of the substrate in the first direction can be: V SH_c = A1; the vertical shear wave velocity V SV_x of the surface of the substrate in the first direction can be: V SV_x = B1, then V1 = max{V SH_x ,V SV_x} = max{A1, B1}.

[0193] For example, when A1 > B1, V1 = A1, and accordingly, the maximum acoustic velocity of the substrate surface in the first direction is the maximum SH modal wave acoustic velocity A1.

[0194] For another example, when A1 < B1, V1 = B1, and accordingly, the maximum acoustic velocity of the substrate surface in the first direction is the maximum SV modal wave acoustic velocity B1.

[0195] In the example of the present application, when the maximum SH modal wave acoustic velocity of the substrate in the first direction, or the maximum SV modal wave acoustic velocity of the substrate in the first direction, satisfies , the component of the acoustic wave energy of the resonator in the SH mode or the SV mode direction can be inhibited from leaking into the substrate, thereby improving the electromechanical coupling coefficient and the quality factor of the device and optimizing the performance of the device.

[0196] In the following, taking a 4H-SiC substrate, a 6H-SiC substrate, and a 3C-SiC substrate as examples, how to inhibit the component of the acoustic wave energy of the resonator in the SH mode or the SV mode direction from leaking into the substrate is explained respectively.

[0197] For example, when the substrate includes at least one of a 4H-SiC substrate or a 6H-SiC substrate, For example, For another example, For another example, For another example,

[0198] In some devices, the maximum shear wave acoustic velocity V01 of the first material of the substrate in any one direction is 8590 m / s, the maximum shear wave acoustic velocity V1 of the surface of the substrate in the first direction is 8202 m / s, and then

[0199] In some optional substrate structures, such as when the substrate includes at least one of a 4H-SiC substrate or a 6H-SiC substrate, the Euler angles of the crystal of the substrate 10 are (α, β, γ), where α can be any angle, 60°≤β≤120°, and 40°≤γ≤55°; or α can be any angle, 60°≤β≤120°, and 125°≤γ≤140°. For example, 0°≤α≤180°, 60°≤β≤120°, and 40°≤γ≤55°; or 0°≤α≤180°, 60°≤β≤120°, and 125°≤γ≤140°.

[0200] The Euler angles (α, β, γ) of the crystal in the above example can have a tolerance, such as (α±5°, β±5°, γ±5°).

[0201] For example, it can be 0±5°≤α≤180±5°, 60±5°≤β≤120±5°, 40±5°≤γ≤55±5°; or, it can be 0±5°≤α≤180±5°, 60±5°≤β≤120±5°, 125±5°≤γ≤140±5°.

[0202] In yet some alternative substrate structures, such as when the substrate comprises at least one of a 4H-SiC substrate or a 6H-SiC substrate, the crystal cut angle and propagation direction are X-cut, (40°≤γ≤55°) Y-propagation direction; or, the crystal cut angle and propagation direction are X-cut, (125°≤γ≤140°) Y-propagation direction; or, the crystal cut angle and propagation direction are Y-cut, (40°≤γ≤55°) X-propagation direction; or, the crystal cut angle and propagation direction are Y-cut, (125°≤γ≤140°) X-propagation direction; where XY refers to the XYZ axes of the piezoelectric crystal.

[0203] The (40°≤γ≤55°), (125°≤γ≤140°) of the above examples allow for some tolerance, such as, it can be (40±5°≤γ≤55±5°), (125±5°≤γ≤140±5°).

[0204] As shown in FIG. 13, the horizontal axis in FIG. 13 represents the value of the Euler angle β of the 4H-SiC substrate 10 crystal, and the vertical axis in FIG. 13 represents the value of the Euler angle γ of the 4H-SiC substrate 10 crystal. The first curve in FIG. 13 illustrates 60°≤β≤120°, 40°≤γ≤55°, and the second curve illustrates 60°≤β≤120°, 125°≤γ≤140°.

[0205] In the example of FIG. 13, α can be any angle, such as, 0°≤α≤180°.

[0206] When the Euler angles of the 4H-SiC substrate 10 crystal are the example shown in FIG. 13, in some structures, the maximum horizontal shear bulk acoustic wave speed V SH_x may be 8590 m / s, and the maximum vertical shear bulk acoustic wave speed V SV_x may be 7483 m / s.

[0207] As shown in FIG. 14 and FIG. 15, FIG. 14 shows the admittance curve of the 4H-SiC substrate crystal when the Euler angles are (0°, 90°, 0°) in the related art, and FIG. 15 shows the admittance curve of the 4H-SiC substrate 10 crystal when the Euler angles are (0°, 90°, 45°) in the example of the present application.

[0208] In FIG. 14, the maximum horizontal shear bulk wave velocity V SH_x may be 7169 m / s, the maximum vertical shear bulk wave velocity V SV_x may be 7792 m / s. However, with the example of the present disclosure, the maximum horizontal shear bulk wave velocity V SH_x may be 8590 m / s, the vertical shear bulk wave velocity V SV_x may be 7483 m / s, the maximum horizontal shear bulk wave velocity V SH_x is obviously improved.

[0209] Comparing FIG. 14 and FIG. 15, in FIG. 14, the cutoff frequency of the SH mode is about 5.6 GHz, however, with the example of the present disclosure, as shown in FIG. 15, the cutoff frequency of the SH mode is increased to 6.7 GHz.

[0210] Continuing comparing FIG. 14 and FIG. 15, FIG. 14 and FIG. 15 respectively show the acoustic wave simulation in the 4H-SiC substrate. In FIG. 14, it can be obviously seen that there are more acoustic waves radiated into the substrate from the leakage, as shown by the dotted line, the acoustic energy of the SH mode is radiated into the substrate, however, in FIG. 15, as shown by the dotted line, the acoustic energy of the SH mode is basically not radiated into the substrate.

[0211] Therefore, based on FIG. 14 and FIG. 15, the improvement of the maximum horizontal shear bulk wave velocity V SH_x , the increase of the cutoff frequency of the SH mode, and the acoustic wave simulation in the 4H-SiC substrate, it can be obviously known that: by optimizing the crystal direction of the 4H-SiC substrate, the electromechanical coupling coefficient and the quality factor of the resonator device can be improved, and the performance of the device can be optimized.

[0212] In some examples, in order to suppress the acoustic wave leakage into the substrate, to increase the cutoff frequency of the SH mode, to improve the electromechanical coupling coefficient and the quality factor of the resonator device, the finger pitch P can be reduced.

[0213] As shown in FIG. 14, FIG. 15 and FIG. 16, FIG. 14 shows the admittance curve when the finger pitch P = 0.64 μm in the related art, FIG. 15 shows the admittance curve when the finger pitch P = 0.64 μm in the example of the present disclosure, and FIG. 16 shows the admittance curve when the finger pitch P = 0.56 μm in the related art.

[0214] Comparing FIG. 14 and FIG. 15, the present application can improve the cutoff frequency of the SH mode by optimizing the crystal orientation of the 4H-SiC substrate while keeping the finger spacing P unchanged; comparing FIG. 14 and FIG. 16, although the cutoff frequency of the SH mode is improved from 5.6 GHz in FIG. 14 to 6.4 GHz in FIG. 16, the finger spacing P is reduced from 0.64 μιη in FIG. 14 to 0.56 μιη in FIG. 16.

[0215] In combination with FIG. 14 and FIG. 16, improving the cutoff frequency of the SH mode by reducing the finger spacing P will bring greater challenges to the processing technology, which limits the improvement of the device performance.

[0216] In combination with FIG. 14 and FIG. 15, using the substrate crystal orientation changing technology in the present application example will not bring challenges to the process, and it is also helpful to improve the maximum spacing limit of photolithography, increase the line width and resolution.

[0217] FIG. 17 shows the slowness curves of the resonator in the present application example. The slowness is the inverse of the velocity.

[0218] In FIG. 17, the slowness curve 1 illustrates the slowness curve of the horizontal shear bulk acoustic wave SH mode, and the slowness curve 2 illustrates the slowness curve of the vertical shear bulk acoustic wave SV mode, for example, the slowness curves in the case where the Euler angles of the 4H-SiC substrate are (0°, 65°, 50°) in FIG. 17.

[0219] In FIG. 17, the horizontal shear bulk acoustic wave velocity is obviously improved. In turn, the resonator in the present application example can optimize the electromechanical coupling coefficient and the quality factor Q.

[0220] The above example gives how to suppress the leakage of the acoustic wave energy of the resonator in the SH mode or SV mode direction into the substrate and the crystal orientation angle of the substrate when the substrate includes at least one of the 4H-SiC substrate or the 6H-SiC substrate.

[0221] The following example illustrates how to suppress the leakage of the acoustic wave energy of the resonator in the SH mode or SV mode direction into the substrate and the crystal orientation angle of the substrate when the substrate includes the 3C-SiC substrate.

[0222] For example, when the substrate includes the 3C-SiC substrate, For example,

[0223] In some devices, the maximum shear wave acoustic velocity V01 of the first material of the substrate in any one direction is 8573 m / s, the maximum shear wave acoustic velocity V1 of the surface of the substrate in the first direction is 8512 m / s, and the Euler angle of the substrate is (0°, 65°, 50°).

[0224] In some alternative substrate structures, such as when the substrate comprises a 3C-SiC substrate, the Euler angles of the crystal of the substrate are (a, b, g); the Euler angles can be selected as follows:

[0225] 0° < a < 22.5°, 67.5° < a < 112.5° or 157.5° < a < 180°, 0° < b < 180°, 0° < g < 7.5° or 172.5° < g < 180°;

[0226] or;

[0227] 22.5° < a < 67.5° or 112.5° < a < 157.5°, 22.5° < b < 157.5°, 0° < g < 7.5° or 172.5° < g < 180°;

[0228] or;

[0229] 0° < a < 7.5°, 82.5° < a < 97.5° or 172.5° < a < 180°, 0° < b < 22.5°, 67.5° < b < 112.5° or 157.5° < b < 180°, 7.5° < g < 22.5° or 157.5° < g < 172.5°;

[0230] or;

[0231] 7.5° < a < 22.5°, 97.5° < a < 112.5°, 67.5° < a < 82.5° 157.5° < a < 172.5°, 127.5° < b < 180°, 7.5° < g < 22.5° or 157.5° < g < 172.5°;

[0232] or;

[0233] 67.5° < a < 82.5°, 157.5° < a < 172.5°, 7.5° < a < 22.5° or 97.5° < a < 112.5°, 0° < b < 52.5°, 7.5° < g < 22.5° or 157.5° < g < 172.5°;

[0234] or;

[0235] 22.5° < a < 37.5°, 112.5° < a < 127.5°, 52.5° < a < 67.5° or 142.5° < a < 157.5°, 172.5° < b < 180°, 7.5° < g < 22.5° or 157.5° < g < 172.5°;

[0236] or;

[0237] 52.5° < α < 67.5°, 142.5° < α < 157.5°, 22.5° < α < 37.5° or 112.5° < α < 127.5°, 0° < β < 7.5°, 7.5° < γ < 22.5° or 157.5° < γ < 172.5°;

[0238] or;

[0239] 7.5° < α < 22.5°, 97.5° < α < 112.5°, 67.5° < α < 82.5° or 157.5° < α < 172.5°, 112.5° < β < 127.5° or 172.5° < β < 180°, 22.5° < γ < 37.5° or 142.5° < γ < 157.5°;

[0240] or;

[0241] 67.5° < α < 82.5°, 157.5° < α < 172.5°, 7.5° < α < 22.5° or 97.5° < α < 112.5°, 0° < β < 7.5° or 52.5° < β < 67.5°, 22.5° < γ < 37.5° or 142.5° < γ < 157.5°;

[0242] or;

[0243] 22.5° < α < 37.5°, 112.5° < α < 127.5°, 52.5° < α < 67.5° or 142.5° < α < 157.5°, 142.5° < β < 180°, 22.5° < γ < 37.5° or 142.5° < γ < 157.5°;

[0244] or;

[0245] 52.5° < α < 67.5°, 142.5° < α < 157.5°, 22.5° < α < 37.5° or 112.5° < α < 127.5°, 0° < β < 37.5°, 22.5° < γ < 37.5° or 142.5° < γ < 157.5°;

[0246] or;

[0247] 37.5° < α < 52.5°, 127.5° < α < 142.5°, 37.5° < α < 52.5° or 127.5° < α < 142.5°, 0° < β < 7.5° or 172.5° < β < 180°, 22.5° < γ < 37.5° or 142.5° < γ < 157.5°;

[0248] or;

[0249] 22.5° < α < 37.5°, 52.5° < α < 67.5°, 112.5° < α < 127.5° or 142.5° < α < 157.5°, 0° < β < 7.5° or 172.5° < β < 180°, 37.5° < γ < 52.5° or 127.5° < γ < 142.5°;

[0250] 37.5° < α < 52.5° or 127.5° < α < 142.5°, 0° < β < 37.5° or 142.5° < β < 180°, 37.5° < γ < 52.5° or 127.5° < γ < 142.5°;

[0251] or;

[0252] 22.5° < α < 37.5°, 112.5° < α < 127.5°, 52.5° < α < 67.5° or 142.5° < α < 157.5°, 0° < β < 37.5°, 52.5° < γ < 67.5° or 112.5° < γ < 127.5°;

[0253] or;

[0254] 52.5° < α < 67.5°, 142.5° < α < 157.5°, 22.5° < α < 37.5° or 112.5° < α < 127.5°, 142.5° < β < 180°, 52.5° < γ < 67.5° or 112.5° < γ < 127.5°;

[0255] or;

[0256] 37.5° < α < 52.5°, 127.5° < α < 142.5°, 37.5° < α < 52.5° or 127.5° < α < 142.5°, 0° < β < 7.5°, 52.5° < β < 67.5°, 112.5° < β < 127.5° or 172.5° < β < 180°, 52.5° < γ < 67.5° or 112.5° < γ < 127.5°;

[0257] or;

[0258] 7.5° < α < 22.5°, 97.5° < α < 112.5°, 67.5° < α < 82.5° or 157.5° < α < 172.5°, 0° < β < 7.5°, 52.5° < γ < 67.5° or 112.5° < γ < 127.5°;

[0259] or;

[0260] 67.5° ≤ α ≤ 82.5°, 157.5° ≤ α ≤ 172.5°, 7.5° ≤ α ≤ 22.5° or 97.5° ≤ α ≤ 112.5°, 172.5° ≤ β ≤ 180°, 52.5° ≤ γ ≤ 67.5° or 112.5° ≤ γ ≤ 127.5°;

[0261] or;

[0262] 0° ≤ α ≤ 7.5°, 82.5° ≤ α ≤ 97.5° or 172.5° ≤ α ≤ 180°, 0° ≤ β ≤ 7.5°, 82.5° ≤ β ≤ 97.5° or 172.5° ≤ β ≤ 180°, 67.5° ≤ γ ≤ 82.5° or 97.5° ≤ γ ≤ 112.5°;

[0263] or;

[0264] 7.5° ≤ α ≤ 22.5°, 97.5° ≤ α ≤ 112.5°, 67.5° ≤ α ≤ 82.5° or 157.5° ≤ α ≤ 172.5°, 0° ≤ β ≤ 52.5° or 82.5° ≤ β ≤ 97.5°, 67.5° ≤ γ ≤ 82.5° or 97.5° ≤ γ ≤ 112.5°;

[0265] or;

[0266] 67.5° ≤ α ≤ 82.5°, 157.5° ≤ α ≤ 172.5°, 7.5° ≤ α ≤ 22.5° or 97.5° ≤ α ≤ 112.5°, 127.5° ≤ β ≤ 180° or 82.5° ≤ β ≤ 97.5°, 67.5° ≤ γ ≤ 82.5° or 97.5° ≤ γ ≤ 112.5°;

[0267] or;

[0268] 22.5° ≤ α ≤ 37.5°, 112.5° ≤ α ≤ 127.5°, 52.5° ≤ α ≤ 67.5° or 142.5° ≤ α ≤ 157.5°, 0° ≤ β ≤ 7.5° or 52.5° ≤ β ≤ 67.5°, 67.5° ≤ γ ≤ 82.5° or 97.5° ≤ γ ≤ 112.5°;

[0269] or;

[0270] 52.5° ≤ α ≤ 67.5°, 142.5° ≤ α ≤ 157.5°, 112.5° ≤ α ≤ 127.5° or 22.5° ≤ α ≤ 37.5°, 112.5° ≤ β ≤ 127.5° or 172.5° ≤ β ≤ 180°, 67.5° ≤ γ ≤ 82.5° or 97.5° ≤ γ ≤ 112.5°;

[0271] or;

[0272] 37.5°≤α≤52.5° or 127.5°≤α≤142.5°, 67.5°≤β≤82.5° or 97.5°≤β≤112.5°, 67.5°≤γ≤82.5° or 97.5°≤γ≤112.5°;

[0273] or;

[0274] 0°≤α≤7.5°, 82.5°≤α≤97.5° or 172.5°≤α≤180°, 0°≤β≤180°, 82.5°≤γ≤97.5°;

[0275] or;

[0276] 7.5°≤α≤22.5°, 67.5°≤α≤82.5°, 97.5°≤α≤112.5° or 157.5°≤α≤172.5°, 0°≤β≤7.5°, 67.5°≤β≤112.5° or 172.5°≤β≤180°, 82.5°≤γ≤97.5°;

[0277] or;

[0278] 22.5°≤α≤67.5° or 112.5°≤α≤157.5°, 82.5°≤β≤97.5°, 82.5°≤γ≤97.5°.

[0279] In some examples, when (α, β, γ) = (0°, 0°, 0°), the maximum horizontal shear bulk wave velocity V SH_x may reach 8573 m / s, the maximum vertical shear bulk wave velocity V SV_x may reach 7905 m / s.

[0280] In yet some alternative substrate structures, such as the substrate comprises a 3C-SiC substrate, the crystal cut angle and propagation direction are X-cut, (0°≤γ≤22.5°, 67.5°≤γ≤112.5°, 157.5°≤γ≤180°) Y propagation direction, or; the crystal cut angle and propagation direction are Y-cut, (0°≤γ≤22.5°, 67.5°≤γ≤112.5°, 157.5°≤γ≤180°) X propagation direction, or; the crystal cut angle and propagation direction are Z-cut, (0°≤γ≤22.5°, 67.5°≤γ≤112.5°, 157.5°≤γ≤180°) X propagation direction, wherein XY refers to the XYZ axes of the piezoelectric crystal being vertical.

[0281] The (0°≤ γ ≤ 22.5°), (67.5°≤ γ ≤ 112.5°), (157.5°≤ γ ≤ 180°) of the above examples can have certain tolerance, for example, can be (0±5°≤ γ ≤ 22.5±5°), (67.5±5°≤ γ ≤ 112.5±5°), (157.5±5°≤ γ ≤ 180±5°).

[0282] When the crystal direction structure of the 3C-SiC substrate adopts the above examples, the maximum horizontal shear bulk acoustic wave speed V SH_x Can be improved, the cutoff frequency of the SH mode is increased, that is, by optimizing the crystal direction of the 3C-SiC substrate, the electromechanical coupling coefficient and the quality factor of the resonator device can be improved, and the performance of the device is optimized.

[0283] The application also gives some implementation manners to suppress the leakage of the components of the acoustic wave energy in the SH mode or the SV mode to the substrate, which are specifically as follows.

[0284] In some examples, the substrate includes a second material, and the second material has a second shear wave speed V02, V02=max(min{V SH ,V SV}),V SH is the horizontal shear wave speed of the second material in any one direction, and V SV is the vertical shear wave speed of the second material in any one direction.

[0285] In the resonator, the substrate has a shear wave speed V2 in the first direction, V2=min{V SH_x ,V SV_x},V SH_x is the horizontal shear wave speed of the substrate surface in the first direction, and V SV_x is the vertical shear wave speed of the substrate surface in the first direction.

[0286] Wherein,

[0287] The substrate 10 can include a second material, and the second material has a second shear wave speed V02, V02=max(min{V SH ,V SV}),V SH is the horizontal shear wave speed of the second material in any one direction, and V SV is the vertical shear wave speed of the second material in any one direction. It can be understood as:

[0288] For example, the second material of the substrate has a horizontal shear wave speed and a vertical shear wave speed in the first direction, a horizontal shear wave speed and a vertical shear wave speed in the second direction, and a horizontal shear wave speed and a vertical shear wave speed in the Nth direction; the minimum value of the horizontal shear wave speed and the vertical shear wave speed in each direction is determined; and the maximum value of the minimum values of all directions is taken to obtain V02.

[0289] The substrate has a shear wave speed V2 in the first direction, V2 = min{V SH_x , V SV_x} in the first direction, V SH_x is a horizontal shear wave speed of the substrate surface in the first direction, and V SV_x is a vertical shear wave speed of the substrate surface in the first direction. It can be understood as follows:

[0290] For example, the horizontal shear wave speed V SH_x of the substrate surface in the first direction can be V SH_x =C1, and the vertical shear wave speed V SV_x of the substrate surface in the first direction can be V SV_x =D1. Then, V2 = min{V SH_x , V SV_x} = min{C1, D1}.

[0291] For example, when C1 > D1, V2 = D1; for example, when C1 < D1, V2 = C1.

[0292] In the example of the present application, the shear wave speed V2 of the substrate surface in the first direction satisfies , the component of the acoustic wave energy of the resonator in the SH mode or the SV mode can be inhibited from leaking into the substrate, thereby improving the electromechanical coupling coefficient and the quality factor of the device and optimizing the performance of the device.

[0293] The following takes a 4H-SiC substrate, a 6H-SiC substrate and a 3C-SiC substrate as examples to explain how to inhibit the component of the acoustic wave energy of the resonator in the SH mode or the SV mode from leaking into the substrate.

[0294] For example, when the substrate includes at least one of a 4H-SiC substrate or a 6H-SiC substrate, For example, For example, For example, For example,

[0295] In some devices, the maximum shear wave velocity V02=7728 m / s of the second material of the substrate in any one direction, the maximum shear wave velocity V2=6946 m / s of the surface of the substrate in the first direction, and

[0296] In some alternative substrate structures, such as when the substrate comprises at least one of a 4H-SiC substrate or the 6H-SiC substrate, the Euler angles of the crystal of the substrate are (α, β, γ); wherein 0°≤α≤180°, 55°≤β≤125°, 20°≤γ≤30°; or 0°≤α≤180°, 55°≤β≤120°, 150°≤γ≤160°.

[0297] The Euler angles (α, β, γ) of the crystal of the above example can have a tolerance, for example, the Euler angles can be (α±5°, β±5°, γ±5°).

[0298] For example, it can be 0±5°≤α≤180±5°, 55±5°≤β≤125±5°, 20±5°≤γ≤30±5°; or it can be 0±5°≤α≤180±5°, 55±5°≤β≤120±5°, 150±5°≤γ≤160±5°.

[0299] In yet other alternative substrate structures, such as when the substrate comprises at least one of a 4H-SiC substrate or the 6H-SiC substrate, the crystal cut angle and the propagation direction are X-cut, (20°≤γ≤30°) Y-propagation direction; or the crystal cut angle and the propagation direction are X-cut, (150°≤γ≤160°) Y-propagation direction; or the crystal cut angle and the propagation direction are Y-cut, (20°≤γ≤30°) X-propagation direction; or the crystal cut angle and the propagation direction are Y-cut, (150°≤γ≤160°) X-propagation direction. Wherein XY refers to the XYZ axis of the piezoelectric crystal.

[0300] The (20°≤γ≤30°), (150°≤γ≤160°) of the above example allows a certain tolerance, for example, it can be (20±5°≤γ≤30±5°), (150±5°≤γ≤160±5°).

[0301] As shown in FIG. 18, the abscissa in FIG. 18 represents the value of the Euler angle β of the crystal of the 4H-SiC substrate 10, and the ordinate in FIG. 18 represents the value of the Euler angle γ of the crystal of the 4H-SiC substrate 10. The first curve in FIG. 18 illustrates 55°≤β≤125°, 20°≤γ≤30°, and the second curve illustrates 55°≤β≤125°, 150°≤γ≤160°.

[0302] In the example of FIG. 18, α can be any angle, for example, it can be 0°≤α≤180°.

[0303] The maximum horizontal shear bulk wave velocity V SH_x The maximum vertical shear bulk wave velocity V SV_x may be 7728 m / s.

[0304] As shown in FIG. 19, FIG. 19 is a diagram of admittance curves, in which a first admittance curve represents an admittance curve of a 4H-SiC substrate crystal with an Euler angle of (0°, 0°, 0°) in the related art, and a second admittance curve represents an admittance curve of a 4H-SiC substrate 10 crystal with an Euler angle of (0°, 90°, 20°) in the example of the present application.

[0305] In the first admittance curve in the related art, the cutoff frequency of the SV mode is about 5.0 GHz, and in the second admittance curve in the example of the present application, the cutoff frequency of the SV mode is about 5.5 GHz, which is significantly higher than 5.0 GHz, thereby preventing SV leakage of the device and greatly improving the Q value of the overall resonator located near the anti-resonance point.

[0306] As shown in FIG. 20 and FIG. 21, FIG. 20 is a diagram of slowness curves of a resonator in the related art, and FIG. 21 is a diagram of slowness curves of a resonator in the example of the present application.

[0307] In FIG. 20, slowness curve 1 represents a slowness curve of a vertical shear bulk wave SV mode, and slowness curve 2 represents a slowness curve of a horizontal shear bulk wave SH mode; in FIG. 21, slowness curve 1 represents a slowness curve of a vertical shear bulk wave SV mode, and slowness curve 2 represents a slowness curve of a horizontal shear bulk wave SH mode, for example, FIG. 20 represents slowness curves in the case of a 4H-SiC substrate with an Euler angle of (0°, 0°, 0°), and FIG. 21 represents slowness curves in the case of a 4H-SiC substrate with an Euler angle of (0°, 90°, 20°).

[0308] Comparing FIG. 20 and FIG. 21, in the related art, the slowness of the vertical shear bulk wave SV is significantly less than the slowness of the vertical shear bulk wave SV in the present application, so that the vertical shear bulk wave velocity in the present application is greater than the vertical shear bulk wave velocity in the related art, for example, V SV_x = 7169 m / s in FIG. 20, and V SV_x = 7728 m / s in FIG. 21, and further, the resonator in the example of the present application can optimize the electromechanical coupling coefficient and the quality factor Q.

[0309] In the above examples, resonators of 4H-SiC substrates or 6H-SiC substrates are given, by optimizing the crystal orientation of the 4H-SiC substrates or 6H-SiC substrates, the sound wave leakage into the 4H-SiC substrates or 6H-SiC substrates is suppressed, and resonators of 3C-SiC substrates are also given below.

[0310] For example, when the substrate includes a 3C-SiC substrate, For example, when the substrate includes a 3C-SiC substrate,

[0311] In some devices, the maximum shear wave speed V02=7925 m / s of the second material of the substrate in any one direction, the maximum shear wave speed V2=6920 m / s of the surface of the substrate in the first direction, and then

[0312] In some optional substrate structures, such as when the substrate includes a 3C-SiC substrate, the Euler angle of the crystal of the substrate is (α, β, γ); the Euler angle can be selected as follows: (0°, 45°, 0°), (0°, 45°, 180°), (90°, 45°, 0°), (90°, 45°, 180°), (180°, 45°, 0°), (180°, 45°, 180°), (0°, 135°, 0°), (0°, 135°, 180°), (90°, 135°, 0°), (90°, 135°, 180°), (45°, 90°, 90°), 135°, 90°, 90°), (180°, 135°, 0°), or (180°, 135°, 180°).

[0313] The Euler angles of the above examples can allow for some tolerance, such as ±7.5°, such as can be (0±7.5°, 45±7.5°, 0±7.5°), (0±7.5°, 45±7.5°, 180±7.5°), (90±7.5°, 45±7.5°, 0±7.5°), (90±7.5°, 45±7.5°, 180±7.5°), (180±7.5°, 45±7.5°, 0±7.5°), (180±7.5°, 45±7.5°, 180±7.5°), (0±7.5°, 135±7.5°, 0±7.5°), (0±7.5°, 135±7.5°, 180±7.5°), (90±7.5°, 135±7.5°, 0±7.5°), (90±7.5°, 135±7.5°, 180±7.5°), (45±7.5°, 90±7.5°, 90±7.5°), (135±7.5°, 90±7.5°, 90±7.5°), (180±7.5°, 135±7.5°, 0±7.5°), or (180±7.5°, 135±7.5°, 180±7.5°).

[0314] In yet other examples, the Euler angles of the above examples can allow for some tolerance, such as ±5°, such as can be (0±5°, 45±5°, 0±5°), (0±5°, 45±5°, 180±5°), (90±5°, 45±5°, 0±5°), (90±5°, 45±5°, 180±5°), (180±5°, 45±5°, 0±5°), (180±5°, 45±5°, 180±5°), (0±5°, 135±5°, 0±5°), (0±5°, 135±5°, 180±5°), (90±5°, 135±5°, 0±5°), (90±5°, 135±5°, 180±5°), (45±5°, 90±5°, 90±5°), (135±5°, 90±5°, 90±5°), (180±5°, 135±5°, 0±5°), or (180±5°, 135±5°, 180±5°).

[0315] In some examples, the maximum horizontal shear bulk sound wave velocity V SH_x may reach 8573 m / s, the maximum vertical shear bulk sound wave velocity V SV_x may reach 8200 m / s.

[0316] In yet other alternative substrate structures, such as when the substrate comprises a 3C-SiC substrate, the crystal cut angle and propagation direction are 45° Y-cut, X-propagation direction vertical.

[0317] The 45° of the above example can have certain tolerance, for example, it can be ±5°.

[0318] When the crystal orientation structure of the 3C-SiC substrate adopts the above example, the shear bulk acoustic wave velocity of the substrate in the first direction can be improved, that is, by optimizing the crystal orientation of the 3C-SiC substrate, the electromechanical coupling coefficient and the quality factor of the resonator device can be improved, and the performance of the device is optimized. In addition, the resonator described above can be realized in a ladder structure as shown in FIG. 19 to realize a filter for radio frequency communication. In the filter, there can be resonators in series with each other, or resonators in parallel with each other, and the resonant frequency of the resonators in parallel can be lower than the resonant frequency of the resonators in series.

[0319] In the example of FIG. 22, there are resonators 400, 410, 420, 430 and 440, the resonators 400, 410 and 420 are series resonators, and the resonators 430 and 440 are parallel resonators. At least one of the resonators 400 to 440 can be the resonator described in the above embodiment.

[0320] In some examples, as shown in FIG. 23, FIG. 23 shows the relationship between the admittance curve of each resonator of the ladder filter in FIG. 22 and the filter transmission loss curve. As shown in FIG. 22, the resonance points of the series resonators (such as the resonators 400, 410 and 420) and the anti-resonance points of the parallel resonators (such as the resonators 430 and 440) are located within the passband frequency band, forming the passband of the filter, the anti-resonance points of the series resonators (such as the resonators 400, 410 and 420) are located on the high frequency side of the passband, and the resonance points of the parallel resonators (such as the resonators 430 and 440) are located on the low frequency side of the passband, so that the filter forms the characteristics of high roll-off and high out-of-band suppression.

[0321] In yet other examples, the resonator of the above example can also be applied in other chips, such as radio frequency front-end components.

[0322] In the description of the present specification, specific features, structures, materials or characteristics can be combined in any one or more embodiments or examples in a suitable manner.

[0323] The above is only a specific implementation of the present application, but the protection scope of the present application is not limited thereto, and any person skilled in the art can easily think of changes or replacements within the technical scope disclosed in the present application, which should be covered within the protection scope of the present application. Therefore, the protection scope of the present application should be subject to the protection scope of the claims.

Claims

1. A resonator, characterized by, Comprising: a substrate and a piezoelectric layer, the substrate and the piezoelectric layer being stacked; a plurality of interdigital electrodes located on a side of the piezoelectric layer facing away from the substrate, the plurality of interdigital electrodes being arranged side by side along a first direction, the first direction being parallel to a surface of the substrate; The substrate comprises a first material having a first shear wave speed V01, V01 = max(max{V SH , SV}, V SH is the horizontal shear wave speed of the first material in any one direction, V SV is the vertical shear wave speed of the first material in any one direction; The substrate has a shear wave speed V1 in the first direction, V1 = max{V SH_x , SV_x V SH_x is the horizontal shear wave speed of the substrate surface in the first direction, V SV_x is the vertical shear wave speed of the substrate surface in the first direction; wherein 2. The resonator according to claim 1, wherein the substrate comprises at least one of a 4H-SiC substrate or a 6H-SiC substrate; wherein 3. The resonator according to claim 2, wherein in the 4H-SiC substrate or the 6H-SiC substrate, an Euler angle of a crystal is (a, b, g); 0° < a < 180°, 60° < b < 120°, 40° < g < 55°; or; 0° < a < 180°, 60° < b < 120°, 125° < g < 140°.

4. The resonator according to claim 2 or 3, wherein in the 4H-SiC substrate or the 6H-SiC substrate, a crystal cut angle and a propagation direction are X-cut, (40° < g < 55°) Y propagation direction; or, a crystal cut angle and a propagation direction are X-cut, (125° < g < 140°) Y propagation direction; or, a crystal cut angle and a propagation direction are Y-cut, (40° < g < 55°) X propagation direction; or, a crystal cut angle and a propagation direction are Y-cut, (125° < g < 140°) X propagation direction.

5. The resonator according to claim 1, wherein the substrate comprises a 3C-SiC substrate; wherein 6. The resonator according to claim 5, wherein in the 3C-SiC substrate, an Euler angle of a crystal is (a, b, g); 0° < a < 22.5°, 67.5° < a < 112.5° or 157.5° < a < 180°, 0° < b < 180°, 0° < g < 7.5° or 172.5° < g < 180°; or; 22.5° < a < 67.5° or 112.5° < a < 157.5°, 22.5° < b < 157.5°, 0° < g < 7.5° or 172.5° < g < 180°; or; 0° < a < 7.5°, 82.5° < a < 97.5° or 172.5° < a < 180°, 0° < b < 22.5°, 67.5° < b < 112.5° or 157.5° < b < 180°, 7.5° < g < 22.5° or 157.5° < g < 172.5°; or; 7.5° < a < 22.5°, 97.5° < a < 112.5°, 67.5° < a < 82.5° 157.5° < a < 172.5°, 127.5° < b < 180°, 7.5° < g < 22.5° or 157.5° < g < 172.5°; or; ​ ​ ​ ​ 67.5° ≤ α ≤ 82.5°, 157.5° ≤ α ≤ 172.5°, 7.5° ≤ α ≤ 22.5° or 97.5° ≤ α ≤ 112.5°, 0° ≤ β ≤ 52.5°, 7.5° ≤ γ ≤ 22.5° or 157.5° ≤ γ ≤ 172.5°; or; 22.5° ≤ α ≤ 37.5°, 112.5° ≤ α ≤ 127.5°, 52.5° ≤ α ≤ 67.5° or 142.5° ≤ α ≤ 157.5°, 172.5° ≤ β ≤ 180°, 7.5° ≤ γ ≤ 22.5° or 157.5° ≤ γ ≤ 172.5°; or; 52.5° ≤ α ≤ 67.5°, 142.5° ≤ α ≤ 157.5°, 22.5° ≤ α ≤ 37.5° or 112.5° ≤ α ≤ 127.5°, 0° ≤ β ≤ 7.5°, 7.5° ≤ γ ≤ 22.5° or 157.5° ≤ γ ≤ 172.5°; or; 7.5° ≤ α ≤ 22.5°, 97.5° ≤ α ≤ 112.5°, 67.5° ≤ α ≤ 82.5° or 157.5° ≤ α ≤ 172.5°, 112.5° ≤ β ≤ 127.5° or 172.5° ≤ β ≤ 180°, 22.5° ≤ γ ≤ 37.5° or 142.5° ≤ γ ≤ 157.5°; or; 67.5° ≤ α ≤ 82.5°, 157.5° ≤ α ≤ 172.5°, 7.5° ≤ α ≤ 22.5° or 97.5° ≤ α ≤ 112.5°, 0° ≤ β ≤ 7.5° or 52.5° ≤ β ≤ 67.5°, 22.5° ≤ γ ≤ 37.5° or 142.5° ≤ γ ≤ 157.5°; or; 22.5° ≤ α ≤ 37.5°, 112.5° ≤ α ≤ 127.5°, 52.5° ≤ α ≤ 67.5° or 142.5° ≤ α ≤ 157.5°, 142.5° ≤ β ≤ 180°, 22.5° ≤ γ ≤ 37.5° or 142.5° ≤ γ ≤ 157.5°; or; 52.5° ≤ α ≤ 67.5°, 142.5° ≤ α ≤ 157.5°, 22.5° ≤ α ≤ 37.5° or 112.5° ≤ α ≤ 127.5°, 0° ≤ β ≤ 37.5°, 22.5° ≤ γ ≤ 37.5° or 142.5° ≤ γ ≤ 157.5°; or; 37.5° ≤ α ≤ 52.5°, 127.5° ≤ α ≤ 142.5°, 37.5° ≤ α ≤ 52.5° or 127.5° ≤ α ≤ 142.5°, 0° ≤ β ≤ 7.5° or 172.5° ≤ β ≤ 180°, 22.5° ≤ γ ≤ 37.5° or 142.5° ≤ γ ≤ 157.5°; or; 22.5° ≤ α ≤ 37.5°, 52.5° ≤ α ≤ 67.5°, 112.5° ≤ α ≤ 127.5° or 142.5° ≤ α ≤ 157.5°, 0° ≤ β ≤ 7.5° or 172.5° ≤ β ≤ 180°, 37.5° ≤ γ ≤ 52.5° or 127.5° ≤ γ ≤ 142.5°; 37.5° < a < 52.5° or 127.5° < a < 142.5°, 0° < β < 37.5° or 142.5° < β < 180°, 37.5° < γ < 52.5° or 127.5° < γ < 142.5°; or; 22.5° < a < 37.5°, 112.5° < a < 127.5°, 52.5° < a < 67.5° or 142.5° < a < 157.5°, 0° < β < 37.5°, 52.5° < γ < 67.5° or 112.5° < γ < 127.5°; or; 52.5° < a < 67.5°, 142.5° < a < 157.5°, 22.5° < a < 37.5° or 112.5° < a < 127.5°, 142.5° < β < 180°, 52.5° < γ < 67.5° or 112.5° < γ < 127.5°; or; 37.5° < a < 52.5°, 127.5° < a < 142.5°, 37.5° < a < 52.5° or 127.5° < a < 142.5°, 0° < β < 7.5°, 52.5° < β < 67.5°, 112.5° < β < 127.5° or 172.5° < β < 180°, 52.5° < γ < 67.5° or 112.5° < γ < 127.5°; or; 7.5° < a < 22.5°, 97.5° < a < 112.5°, 67.5° < a < 82.5° or 157.5° < a < 172.5°, 0° < β < 7.5°, 52.5° < γ < 67.5° or 112.5° < γ < 127.5°; or; 67.5° < a < 82.5°, 157.5° < a < 172.5°, 7.5° < a < 22.5° or 97.5° < a < 112.5°, 172.5° < β < 180°, 52.5° < γ < 67.5° or 112.5° < γ < 127.5°; or; 0° < a < 7.5°, 82.5° < a < 97.5° or 172.5° < a < 180°, 0° < β < 7.5°, 82.5° < β < 97.5° or 172.5° < β < 180°, 67.5° < γ < 82.5° or 97.5° < γ < 112.5°; or; 7.5° < a < 22.5°, 97.5° < a < 112.5°, 67.5° < a < 82.5° or 157.5° < a < 172.5°, 0° < β < 52.5° or 82.5° < β < 97.5°, 67.5° < γ < 82.5° or 97.5° < γ < 112.5°; or; 67.5° < a < 82.5°, 157.5° < a < 172.5°, 7.5° < a < 22.5° or 97.5° < a < 112.5°, 127.5° < β < 180° or 82.5° < β < 97.5°, 67.5° < γ < 82.5° or 97.5° < γ < 112.5°; or; 22.5°≤α≤37.5°, 112.5°≤α≤127.5°, 52.5°≤α≤67.5° or 142.5°≤α≤157.5°, 0°≤β≤7.5° or 52.5°≤β≤67.5°, 67.5°≤γ≤82.5° or 97.5°≤γ≤112.5°; or; 52.5°≤α≤67.5°, 142.5°≤α≤157.5°, 112.5°≤α≤127.5° or 22.5°≤α≤37.5°, 112.5°≤β≤127.5° or 172.5°≤β≤180°, 67.5°≤γ≤82.5° or 97.5°≤γ≤112.5°; or; 37.5°≤α≤52.5° or 127.5°≤α≤142.5°, 67.5°≤β≤82.5° or 97.5°≤β≤112.5°, 67.5°≤γ≤82.5° or 97.5°≤γ≤112.5°; or; 0°≤α≤7.5°, 82.5°≤α≤97.5° or 172.5°≤α≤180°, 0°≤β≤180°, 82.5°≤γ≤97.5°; or; 7.5°≤α≤22.5°, 67.5°≤α≤82.5°, 97.5°≤α≤112.5° or 157.5°≤α≤172.5°, 0°≤β≤7.5°, 67.5°≤β≤112.5° or 172.5°≤β≤180°, 82.5°≤γ≤97.5°; or; 22.5°≤α≤67.5° or 112.5°≤α≤157.5°, 82.5°≤β≤97.5°, 82.5°≤γ≤97.5°.

7. The resonator according to claim 5 or 6, wherein in the 3C-SiC substrate, the crystal cut angle and the propagation direction are X-cut, (0°≤γ≤22.5°, 67.5°≤γ≤112.5°, 157.5°≤γ≤180°) Y propagation direction, or the crystal cut angle and the propagation direction are Y-cut, (0°≤γ≤22.5°, 67.5°≤γ≤112.5°, 157.5°≤γ≤180°) X propagation direction, or the crystal cut angle and the propagation direction are Z-cut, (0°≤γ≤22.5°, 67.5°≤γ≤112.5°, 157.5°≤γ≤180°) X propagation direction.

8. The resonator of any one of claims 1-7, wherein, The resonator includes a bulk acoustic wave resonator or a surface acoustic wave resonator.

9. A resonator characterized by, including: a substrate and a piezoelectric layer, the substrate and the piezoelectric layer being stacked; a plurality of interdigital electrodes, the plurality of interdigital electrodes being located on a side of the piezoelectric layer facing away from the substrate, the plurality of interdigital electrodes being arranged side by side along a first direction, the first direction being parallel to a surface of the substrate; The substrate comprises a second material having a second shear wave speed V02, V02 = max(min{V SH , V SV}, V SH is the horizontal shear wave speed of the second material in any one direction, and V SV is the vertical shear wave speed of the second material in any one direction. The substrate has a shear wave speed V2 in the first direction, V2 = min{V SH_x , V SV_x ,} V SH_x is the horizontal shear wave speed of the substrate surface in the first direction, V SV_x is the vertical shear wave speed of the substrate surface in the first direction; wherein 10. The resonator according to claim 9, wherein the substrate includes at least one of a 4H-SiC substrate or a 6H-SiC substrate; wherein, 11. The resonator according to claim 10, wherein In the 4H-SiC substrate or the 6H-SiC substrate, the Euler angle of the crystal is (α, β, γ); 0°≤α≤180°, 55°≤β≤125°, 20°≤γ≤30°; or; 0°≤α≤180°, 55°≤β≤120°, 150°≤γ≤160°.

12. The resonator according to claim 10 or 11, wherein, In the 4H-SiC substrate or the 6H-SiC substrate, the crystal cut angle and the propagation direction are X-cut, (20°≤γ≤30°) Y propagation direction; or, the crystal cut angle and the propagation direction are X-cut, (150°≤γ≤160°) Y propagation direction; or, the crystal cut angle and the propagation direction are Y-cut, (20°≤γ≤30°) X propagation direction; or, the crystal cut angle and the propagation direction are Y-cut, (150°≤γ≤160°) X propagation direction.

13. The resonator according to claim 9, wherein, the substrate comprises a 3C-SiC substrate; wherein 14. The resonator according to claim 13, wherein, In the 3C-SiC substrate, the Euler angle of the crystal is: (0±7.5°,45±7.5°,0±7.5°)、(0±7.5°,45±7.5°,180±7.5°)、 (90±7.5°,45±7.5°,0±7.5°)、(90±7.5°,45±7.5°,180±7.5°)、 (180±7.5°,45±7.5°,0±7.5°)、(180±7.5°,45±7.5°,180±7.5°)、 (0±7.5°,135±7.5°,0±7.5°)、(0±7.5°,135±7.5°,180±7.5°)、 (90±7.5°,135±7.5°,0±7.5°)、(90±7.5°,135±7.5°,180±7.5°)、 (45±7.5°,90±7.5°,90±7.5°)、(135±7.5°,90±7.5°,90±7.5°)、 (180±7.5°, 135±7.5°, 0±7.5°) or (180±7.5°, 135±7.5°, 180±7.5°).

15. The resonator according to claim 13 or 14, wherein, In the 3C-SiC substrate, the crystal cut angle and the propagation direction are 45° Y-cut, X propagation direction.

16. The resonator of any one of claims 9-15, wherein, The resonator comprises a bulk acoustic wave resonator or a surface acoustic wave resonator.

17. A chip, characterized by The resonator comprises: a plurality of electrically connected resonators, at least one resonator in the plurality of resonators being the resonator according to any one of claims 1-16.

18. An electronic device, comprising: The resonator comprises: an amplifier; the resonator according to any one of claims 1-16 or the chip according to claim 17, the resonator or the chip being electrically connected with the amplifier.

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