Electronic apparatus, working method, power amplifier and communication device

Abstract

The present application relates to the technical field of communications, and discloses an electronic apparatus, a working method, a power amplifier and a communication device, used for improving efficiency and linearity. The electronic apparatus comprises a first HEMT apparatus, a second HEMT apparatus, a first gate, a second gate, a source, and a drain. The first gate is connected to a gate of the first HEMT apparatus and a source of the second HEMT apparatus; the source of the electronic apparatus is connected to a source of the first HEMT apparatus; the drain of the electronic apparatus is connected to a drain of the first HEMT apparatus; the second gate is connected to a gate of the second HEMT apparatus; and a drain of the second HEMT apparatus is electrically floating. The gate-to-source capacitance of the first HEMT apparatus is compensated by the gate-to-source capacitance of the second HEMT apparatus, such that the sum of the gate-to-source capacitance of the second HEMT apparatus and the gate-to-source capacitance of the first HEMT apparatus remains constant as the voltage of the first gate changes, improving efficiency and linearity.

Description

Electronic device, working method, power amplifier and communication device

[0001] Cross-reference to related applications

[0002] This application claims priority to the Chinese Patent Application No. 202411390677.0, filed on September 30, 2024, and entitled "Electronic device, working method, power amplifier and communication device", the content of which is incorporated herein by reference in its entirety. TECHNICAL FIELD

[0003] The present application relates to the field of communication technology, and in particular to an electronic device, a working method, a power amplifier and a communication device. BACKGROUND

[0004] A power amplifier (PA) is an important component in a communication device, which can amplify the power of a radio frequency signal to achieve sufficient radio frequency power. Currently, a high electron mobility transistor (HEMT) device is usually used for radio frequency signal amplification. In operation, the gate, source and drain of the HEMT device are connected to appropriate voltages, free electrons are transmitted from the source to the drain through a two dimensional electron gas (2DEG) conductive channel, the gate receives a radio frequency signal, and the drain outputs a radio frequency signal to achieve signal amplification. However, the input capacitance of the HEMT device usually includes the gate-source capacitance Cgs between the gate and the source of the HEMT device and the capacitance Cgd between the gate and the drain of the HEMT device, and the gate-source capacitance Cgs of the HEMT device changes nonlinearly with the change of the voltage received by the gate, and the influence of the gate-source capacitance Cgs on the input capacitance is much greater than that of the capacitance Cgd, thereby causing the input capacitance of the HEMT device to have nonlinear characteristics, thereby affecting the efficiency improvement and linearity. SUMMARY

[0005] Embodiments of the present application provide an electronic device, a working method, a power amplifier and a communication device to compensate for the gate-source capacitance Cgs and improve the efficiency and linearity.

[0006] In a first aspect, an electronic device is provided. The electronic device includes a first HEMT device, a second HEMT device, and a first gate, a second gate, a source and a drain of the electronic device. The first gate connects a gate of the first HEMT device and a source of the second HEMT device, the source of the electronic device connects a source of the first HEMT device, the drain of the electronic device connects a drain of the first HEMT device, the second gate connects a gate of the second HEMT device, and a drain of the second HEMT device is electrically floating. In this way, the gate-source capacitance of the first HEMT device can be compensated by the source-gate capacitance of the second HEMT device, and the sum of the capacitance values of the source-gate capacitance of the second HEMT device and the gate-source capacitance of the first HEMT device can be considered as constant with respect to the voltage of the first gate, thereby improving efficiency and linearity.

[0007] In a possible implementation, the electronic device includes one second HEMT device and one second gate, thereby reducing complexity and cost of the electronic device.

[0008] In a possible implementation, the electronic device includes a plurality of second HEMT devices and a plurality of second gates, the number of the plurality of second HEMT devices is the same as the number of the plurality of second gates, one second HEMT device of the plurality of second HEMT devices and one second gate of the plurality of second gates form one device group, and the electronic device includes a plurality of device groups. In addition, the gate of the second HEMT device and the second gate in the same device group are connected to each other, the source of the second HEMT device in each device group is connected to the gate of the first HEMT device respectively, and the drain of the second HEMT device in each device group is electrically floating.

[0009] In a possible implementation, the second gates in different device groups are insulated from each other, so as to independently receive a control voltage.

[0010] In a possible implementation, the second gates in different device groups are connected to each other, so as to receive the same control voltage.

[0011] In a possible implementation, the first HEMT device and the second HEMT device are of the same type, and the first HEMT device and the second HEMT device are formed on the same substrate, so that the gate-source capacitance of the first HEMT device can be compensated relatively ideally.

[0012] In a possible implementation, the GaN HEMT device, the GaAs HEMT device, the AlN HEMT device, the SiC HEMT device, and the Ga2O3 HEMT device are relatively mature, and setting the type of the first HEMT device and the second HEMT device to one of the GaN HEMT device, the GaAs HEMT device, the AlN HEMT device, the SiC HEMT device, and the Ga2O3 HEMT device can relatively simply implement the first HEMT device and the second HEMT device, thereby reducing design difficulty and production cost.

[0013] In a possible implementation, the electronic device in the embodiment of the present application can be a die, thereby having higher flexibility and convenience in application.

[0014] In a possible implementation, the electronic device in the embodiment of the present application can also be a packaged semiconductor device, and the first gate, the second gate, the source, and the drain of the electronic device can be respectively connected to different pins in the semiconductor device, the drain of the second HEMT device can not be connected to a pin of the semiconductor device, or the drain of the second HEMT device can be connected to a pin of the semiconductor device, but the pin connected to the drain of the second HEMT device is not electrically connected to an external component or circuit, or the pin connected to the drain of the second HEMT device is electrically connected to an external component or circuit, but the external component or circuit does not transmit voltage or current to the pin connected to the drain of the second HEMT device when the electronic device works, so that the drain of the second HEMT device is electrically floating.

[0015] In a second aspect, the embodiments of the present application further provide a working method of the electronic device, which is applied to the electronic device in the first aspect and the embodiments of the first aspect. The working method comprises: the first gate receives the radio frequency signal, the second gate receives the control voltage, the source of the electronic device receives the ground voltage, and the drain of the electronic device outputs the radio frequency signal. Based on this, when the electronic device works, the source of the first HEMT device receives the ground voltage through the source of the electronic device, the gate of the first HEMT device receives the appropriate direct current voltage through the first gate, the drain of the first HEMT device receives the appropriate direct current voltage through the drain of the electronic device, the free electrons are transmitted from the source to the drain of the first HEMT device through the 2DEG conductive channel, the radio frequency signal is input to the gate of the first HEMT device through the first gate, and the drain of the first HEMT device outputs the radio frequency signal, so that the radio frequency signal amplification can be realized by using the first HEMT device. Therefore, the gate-source capacitance Cgs of the first HEMT device changes nonlinearly with the change of the voltage received by the first gate. In order to compensate the gate-source capacitance Cgs of the first HEMT device, the gate of the second HEMT device receives the direct current control voltage through the second gate. Since the source of the second HEMT device is connected with the first gate, the source-gate capacitance Csg of the second HEMT device also changes nonlinearly with the change of the voltage received by the first gate, and the change trends of Cgs and Csg with the change of the voltage received by the first gate are opposite, approximately in complementary form. Based on this, the capacitance value of Cgs and Csg after mutual superposition can be regarded as keeping unchanged with the change of the voltage of the first gate, so that the gate-source capacitance Cgs of the first HEMT device can be compensated, and the efficiency and linearity can be improved.

[0016] In the formula, the gate-source capacitance of the first HEMT device is the capacitance between the gate and the source of the first HEMT device, and the source-gate capacitance of the second HEMT device is the capacitance between the source and the gate of the second HEMT device.

[0017] In a possible implementation, the source-gate capacitance of the second HEMT device decreases nonlinearly with the increase of the voltage of the first gate. And the gate-source capacitance of the first HEMT device increases nonlinearly with the increase of the voltage of the first gate. Therefore, the change trends of the source-gate capacitance of the second HEMT device and the gate-source capacitance of the first HEMT device are opposite, approximately in complementary form, so that the sum of the capacitance values of the gate-source capacitance of the first HEMT device and the source-gate capacitance of the second HEMT device can be regarded as keeping unchanged with the change of the voltage of the first gate.

[0018] In a possible implementation, when the electronic device includes a plurality of device groups, and each of the plurality of device groups includes one second HEMT device and one second gate connected to each other. Thus, the plurality of second gates can include a first part of second gates and a second part of second gates, and the first part of second gates and the second part of second gates do not include each other. The working method can further include: the first part of second gates and the second part of second gates alternately receive the control voltage, that is, the first part of second gates and the second part of second gates receive the control voltage in time division. When the second gate receiving the control voltage is the first part of second gates, the second part of second gates is electrically floating, and when the second gate receiving the control voltage is the second part of second gates, the first part of second gates is electrically floating. Thus, when the first part of second gates is loaded with the control voltage, the second part of second gates is not loaded with the control voltage, which is beneficial to the recovery of the source-gate capacitance Csg of the second HEMT device connected to the second part of second gates. When the second part of second gates is loaded with the control voltage, the first part of second gates is not loaded with the control voltage, which is beneficial to the recovery of the source-gate capacitance Csg of the second HEMT device connected to the first part of second gates. Thus, the source-gate capacitance Csg of the second HEMT device connected to the first part of second gates and the second part of second gates can be alternately recovered, and the stability and service life of the device can be improved.

[0019] In a possible implementation, a plurality of working time length thresholds are provided, and the plurality of working time length thresholds gradually increase in value. Based on this, the voltage value of the control voltage can be adjusted according to the cumulative working time length of the electronic device and the working time length threshold. Exemplarily, the plurality of working time length thresholds include a first working time length threshold and a second working time length threshold adjacent in value, the second working time length threshold is greater than the first working time length threshold, and the working method further includes: when the cumulative working time length of the electronic device is greater than or equal to the first working time length threshold, the voltage value of the control voltage is increased from the current voltage value to a first target voltage value; and when the cumulative working time length of the electronic device is greater than or equal to the second working time length threshold, the voltage value of the control voltage is increased from the first target voltage value to a second target voltage value. Thus, during the use of the electronic device, by providing the working time length thresholds that increase in steps, the voltage value of the control voltage can be increased in steps, and the effect of compensating for the gate-source capacitance Cgs of the first HEMT device can be further ensured.

[0020] In a possible implementation, the voltage value of the control voltage can also be set as a fixed value, to reduce the complexity of voltage control.

[0021] In a third aspect, the embodiments of the present application further provide a power amplifier. The power amplifier comprises a radio frequency signal input end, a radio frequency signal output end, a control voltage input end, a ground end, and at least one electronic device. The first gate of the electronic device is connected to the radio frequency signal input end, the second gate of the electronic device is connected to the control voltage input end, the source of the electronic device is connected to the ground end, and the drain of the electronic device is connected to the radio frequency signal output end. The electronic device is the electronic device in the first aspect and the embodiments of the first aspect. Since the electronic device has good performance, the power amplifier comprising the electronic device also has good performance. The principle of solving the problem of the power amplifier is similar to that of the electronic device. Therefore, the embodiments and technical effects of the power amplifier can refer to those of the electronic device, and the repeated parts will not be described herein.

[0022] In a possible implementation, when the electronic device comprises a plurality of device groups, each device group in the plurality of device groups comprises a second HEMT device and a second gate connected to each other, the second gates in different device groups are independent of each other, and the control voltage input ends connected to the electronic devices in different device groups are independent of each other and not connected to each other. The second HEMT devices in different device groups can be flexibly controlled.

[0023] In a possible implementation, when the electronic device comprises a plurality of device groups, each device group in the plurality of device groups comprises a second HEMT device and a second gate connected to each other, the second gates in different device groups are connected to each other, and the second gates of the same electronic device are connected to the same control voltage input end. The same control voltage can be input to the plurality of second gates in the same electronic device.

[0024] In a fourth aspect, the embodiments of the present application further provide a communication device. The communication device comprises a communication interface, a filter, and a power amplifier connected between the communication interface and the filter. The power amplifier is the power amplifier in the third aspect and the embodiments of the third aspect. Since the power amplifier has good performance, the communication device comprising the power amplifier also has good performance. The principle of solving the problem of the communication device is similar to that of the power amplifier. Therefore, the embodiments and technical effects of the communication device can refer to those of the power amplifier, and the repeated parts will not be described herein.

[0025] In a possible implementation, the communication device further comprises a baseband unit connected to the communication interface.

[0026] Exemplarily, the communication device can be a base station, a radar, or the like, or the communication device can also be a radio frequency remote unit (RRU) arranged in the base station. BRIEF DESCRIPTION OF DRAWINGS

[0027] Fig. 1 is a schematic diagram of a structure of a base station;

[0028] Fig. 2 is a schematic diagram of a structure of a radio remote unit;

[0029] Fig. 3 is a schematic diagram of a structure of a power amplifier in the prior art;

[0030] Fig. 4 is a circuit diagram of an electronic device provided by an embodiment of the present application;

[0031] Fig. 5 is a simulation result diagram provided by an embodiment of the present application;

[0032] Fig. 6 is a schematic diagram of a relationship between a control voltage received by a second gate and a source-gate capacitance of a second HEMT device provided by an embodiment of the present application;

[0033] Fig. 7 is a schematic diagram of a cumulative working time length, a working time length threshold value and a voltage value of a control voltage in an embodiment of the present application;

[0034] Fig. 8 is another circuit diagram of an electronic device provided by an embodiment of the present application;

[0035] Fig. 9 is a schematic diagram of two second gates receiving control voltages in time division provided by an embodiment of the present application;

[0036] Fig. 10A is a schematic diagram of a structure of a power amplifier in an embodiment of the present application;

[0037] Fig. 10B is a schematic diagram of a structure of another power amplifier in an embodiment of the present application;

[0038] Fig. 10C is a schematic diagram of a structure of another power amplifier in an embodiment of the present application.

[0039] Fig. 10C is a schematic diagram of a structure of another power amplifier in an embodiment of the present application. DETAILED DESCRIPTION

[0040] In order to make the purposes, technical solutions and advantages of the present application clearer, the present application will be further described in detail below with reference to the drawings. The specific operation methods in the method embodiments can also be applied to the device embodiments or system embodiments. It should be noted that in the description of the present application, "multiple" can be understood as "at least two". In addition, it should be understood that in the description of the present application, the terms "first", "second", etc. are used only for the purpose of distinguishing the description and cannot be understood as indicating or implying relative importance or indicating or implying sequence.

[0041] It should be noted that "connection" in the embodiments of the present application refers to electrical connection, and the connection between two electrical elements can be direct or indirect connection between the two electrical elements. For example, A and B are connected, which can be direct connection between A and B, or indirect connection between A and B through one or more other electrical elements, for example, A and B are connected, which can be direct connection between A and C, direct connection between C and B, and connection between A and B through C. In addition, in the present application, unless otherwise specified and limited, the terms "connected", "connected", "provided" and the like should be understood broadly. For example, it can be fixedly connected, or it can be detachably connected, or it can be integrated; it can be mechanically connected, or it can be electrically connected; it can be directly connected, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two elements or the interaction relationship between two elements. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0042] It should be noted that the same reference signs in the drawings of the present application represent the same or similar structures, and therefore repeated description thereof will be omitted. The expressions of position and direction described in the present application are described with reference to the drawings, but changes can also be made as needed, and the changes made are included in the scope of protection of the present application. The drawings of the present application are only used to show the relative positional relationship and do not represent the true proportion.

[0043] The schemes described in the embodiments of the present application can be used in various different communication devices, such as second generation (2nd Generation, 2G) communication system, third generation (3rd Generation, 3G) communication system, long term evolution (Long Term Evolution, LTE) system, or fifth generation (5th Generation, 5G) communication system, future communication network system and more subsequent possible communication system.

[0044] The electronic device provided in the embodiments of the present application can be integrated in any communication device that needs to amplify the power of a radio frequency signal, for example, the communication device can be a base station, a radar, or the like. The electronic device provided in the embodiments of the present application can be applied to a radio frequency circuit part of a base station, a radar, or the like. Alternatively, the communication device can also be a radio frequency remote unit (RRU) arranged in a base station, and the electronic device provided in the embodiments of the present application can also be applied to the radio frequency remote unit.

[0045] The structure of the communication device is described below by taking a base station as an example. The base station is a device deployed in a wireless access network to provide wireless communication functions for terminals. The base station can include various forms of macro base stations, micro base stations, relay stations, access points, and the like. When different communication systems are used, the names of devices with base station functions can be different, for example, in an LTE communication system, it can be an evolved NodeB (eNB or eNodeB), in a 3G communication system, it can be a NodeB, in a 2G communication system, it can be a base station (BS), and the like. Or similar devices in subsequent more possible communication systems.

[0046] FIG. 1 is a schematic diagram of a structure of a base station. Referring to FIG. 1, the base station 1 can include a baseband unit (BBU) 11, a radio remote unit (RRU) 12, and an antenna system 13. The radio remote unit 12 can be directly or indirectly connected to the baseband unit 11, for example, the radio remote unit 12 can be connected to the baseband unit 11 through optical fiber, twisted pair, or the like. In addition, the radio remote unit 12 is connected to the antenna system 13 through an external interface. Exemplarily, in operation, the baseband unit 11 outputs a radio frequency signal to the radio remote unit 12. The transmit chain in the radio remote unit 12 processes the radio frequency signal and sends it to the antenna system 13, which transmits the radio frequency signal, thereby completing the transmission of the radio frequency signal. Alternatively, the antenna system 13 receives a radio frequency signal and sends it to the radio remote unit 12. The radio remote unit 12 processes the radio frequency signal and sends it to the baseband unit 11, thereby completing the reception of the radio frequency signal.

[0047] FIG. 2 is a schematic diagram of a structure of a radio remote unit. Referring to FIG. 2, the radio remote unit 12 can include a communication interface, a power amplifier, and a filter. The communication interface is connected to the baseband unit 11. The communication interface is connected to the input end of the power amplifier. The output end of the power amplifier is connected to the filter. The filter is also connected to the antenna system 13.

[0048] The communication interface is configured to connect the radio remote unit 12 with the baseband unit. Exemplarily, the communication interface can include, but is not limited to, a high-speed interface module.

[0049] The power amplifier is configured to amplify the power of the radio frequency signal.

[0050] The filter is configured to implement a filtering function. Exemplarily, the filter can include, but is not limited to, a duplexer.

[0051] Based on this, in operation, the radio frequency signal is input through the communication port, and after the radio frequency signal is amplified to a required high-power radio frequency signal by the power amplifier, the radio frequency signal is sent to the antenna system 13 after being filtered by the filter, so as to be emitted by the antenna system 13, thereby completing the emission of the radio frequency signal.

[0052] Exemplarily, the radio remote unit 12 can further include a radio frequency transceiver unit connected between the communication interface and the power amplifier, so as to receive and send the radio frequency signal through the radio frequency transceiver unit. Exemplarily, the radio frequency transceiver unit can include a transmitter. Moreover, the radio frequency transceiver unit is an optional structure, and can be omitted.

[0053] In addition, those skilled in the art can understand that the hardware structure of the radio remote unit 12 shown in FIG. 2 does not constitute a limitation on the radio remote unit 12, and the radio remote unit 12 provided in the embodiments of the present application can include more or fewer components than those shown in the figure, can combine two or more components, or can have a different component configuration. The various components shown in FIG. 2 can be implemented in hardware, software, or a combination of hardware and software including one or more signal processing and / or application specific integrated circuits. In addition, one or more of the components shown in FIG. 2 can be disposed on a printed circuit board (PCB).

[0054] FIG. 3 is a structural schematic diagram of a power amplifier in the prior art. Referring to FIG. 3, the power amplifier has a radio frequency signal input end RfI, a radio frequency signal output end RfO, a ground end GND, and a HEMT device S1. The gate of the HEMT device S1 is connected with the radio frequency signal input end RfI of the power amplifier, the drain of the HEMT device S1 is connected with the radio frequency signal output end RfO of the power amplifier, and the source of the HEMT device S1 is connected with the ground end GND of the power amplifier.

[0055] In operation, the source of the HEMT device S1 is connected to a ground voltage, the gate and the drain of the HEMT device S1 are connected to appropriate voltages, free electrons are transmitted from the source to the drain through a two dimensional electron gas (2DEG) conductive channel, a radio frequency signal is input to the gate through the radio frequency signal input end RfI, the drain outputs the radio frequency signal to the radio frequency signal output end RfO, and radio frequency signal amplification is realized. However, the input capacitance of the HEMT device S1 usually includes a gate-source capacitance Cgs of the HEMT device S1 and a gate-drain capacitance Cgd of the HEMT device S1, the gate-source capacitance Cgs is a capacitance between the gate and the source of the HEMT device S1, and the gate-drain capacitance Cgd is a capacitance between the gate and the drain of the HEMT device S1, wherein the gate-source capacitance Cgs of the HEMT device S1 changes nonlinearly with changes in the voltage received by the gate thereof, and the gate-source capacitance Cgs has a much greater impact on the input capacitance than the gate-drain capacitance Cgd, so that the input capacitance of the HEMT device S1 has a nonlinear characteristic, thereby affecting efficiency improvement and linearity

[0056] To solve the above problems, an electronic device is provided in the embodiments of the present application, which improves efficiency and linearity by compensating for the gate-source capacitance Cgs of the HEMT device S1.

[0057] FIG. 4 is a circuit diagram of an electronic device provided in the embodiments of the present application, referring to FIG. 4, an electronic device 100a provided in the embodiments of the present application can include a first HEMT device M1, a second HEMT device M2, and a first gate G1, a second gate G2, a source S, and a drain D of the electronic device 100a, the first gate G1 is connected to a gate g1 of the first HEMT device M1 and a source s2 of the second HEMT device M2, the source S of the electronic device 100a is connected to a source s1 of the first HEMT device M1, the drain D of the electronic device 100a is connected to a drain d1 of the first HEMT device M1, the second gate G2 is connected to a gate g2 of the second HEMT device M2, and a drain d2 of the second HEMT device M2 is electrically floating.

[0058] The drain of the second HEMT device M2 being electrically floating can be understood as: the drain of the second HEMT device M2 is not electrically connected with the gate and the source of the second HEMT device M2, and the drain of the second HEMT device M2 is not electrically connected with the gate, the source and the drain of the first HEMT device M1, and the drain of the second HEMT device M2 is not electrically connected with external components or circuits, or the drain of the second HEMT device M2 is electrically connected with external components or circuits, but the external components or circuits do not transmit voltage or current to the drain of the second HEMT device M2 when the electronic device works. Based on this, by making the drain of the second HEMT device M2 in an electrically floating state, the drain of the second HEMT device M2 does not receive voltage, and no current passes between the source and the drain of the second HEMT device M2, and no static current bias is needed, which is equivalent to the second HEMT device M2 being in an off state, so the second HEMT device M2 does not increase the direct current power consumption.

[0059] In addition, FIG. 4 illustrates a first HEMT device M1, a second HEMT device M2, a first gate G1, a second gate G2, a source S and a drain D of the electronic device 100a. In addition, the structure can reduce the number of second HEMT devices M2, and can reduce the complexity and cost of the electronic device 100a.

[0060] For example, referring to FIG. 4, the input capacitance of the electronic device 100a provided by the embodiments of the present application not only includes the gate-source capacitance Cgs and the gate-drain capacitance Cgd of the first HEMT device M1, but also includes the source-gate capacitance Csg of the second HEMT device M2. The gate-source capacitance Cgs of the first HEMT device M1 is the capacitance between the gate g1 and the source s1 of the first HEMT device M1, the gate-drain capacitance Cgd of the first HEMT device M1 is the capacitance between the gate g1 and the drain d1 of the first HEMT device M1, and the source-gate capacitance Csg of the second HEMT device M2 is the capacitance between the source s2 and the gate g2 of the second HEMT device M2. Based on this, the input capacitance of the electronic device 100a includes the gate-source capacitance Cgs, the gate-drain capacitance Cgd and the source-gate capacitance Csg of the first HEMT device M1.

[0061] And, when the electronic device 100a is working, the source s1 of the first HEMT device M1 receives a ground voltage through the source S of the electronic device 100a, the gate g1 of the first HEMT device M1 receives a suitable DC voltage through the first gate G1, the drain d1 of the first HEMT device M1 receives a suitable DC voltage through the drain D of the electronic device 100a, the free electrons are transmitted from the source s1 to the drain d1 through the two-dimensional electron gas (2DEG) conductive channel, the radio frequency signal is input to the gate g1 of the first HEMT device M1 through the first gate G1, and the drain d1 of the first HEMT device M1 outputs the radio frequency signal, so that the radio frequency signal amplification can be realized by using the first HEMT device M1. According to the characteristics of the HEMT device itself, the gate-source capacitance Cgs of the first HEMT device M1 changes nonlinearly with the change of the voltage received by the first gate G1.

[0062] In order to compensate the gate-source capacitance Cgs of the first HEMT device M1, when the electronic device 100a is working, the gate g2 of the second HEMT device M2 receives a DC control voltage through the second gate G2, and since the source s2 of the second HEMT device M2 is connected with the first gate G1, according to the characteristics of the HEMT device itself, the source-gate capacitance Csg of the second HEMT device M2 also changes nonlinearly with the change of the voltage received by the first gate G1, and the change trends of Cgs and Csg with the change of the voltage received by the first gate G1 are opposite, approximately complementary. Based on this, the capacitance value of Cgs and Csg superimposed on each other can be regarded as keeping unchanged with the change of the voltage of the first gate G1, so that the gate-source capacitance Cgs of the first HEMT device M1 can be compensated, and the efficiency and linearity can be improved.

[0063] The present application also takes the structure of the electronic device 100a shown in FIG. 4 as an example to simulate the gate-source capacitance Cgs of the first HEMT device M1, the source-gate capacitance Csg of the second HEMT device M2, and the sum of Cgs and Csg. The simulation results are shown in FIG. 5, in which the horizontal coordinate represents the voltage of the first gate G1, and the vertical coordinate represents the capacitance value. The simulation results show that Cgs and Csg change nonlinearly with the change of the voltage of the first gate G1, and the change trends of Cgs and Csg are opposite, approximately complementary. In addition, the sum of the capacitance values of Cgs and Csg is approximately a straight line, which can indicate that the capacitance value Cgs+Csg of Cgs and Csg superimposed on each other can be regarded as keeping unchanged with the change of the voltage of the first gate G1, so that the gate-source capacitance Cgs of the first HEMT device M1 can be compensated, and the efficiency and linearity can be improved.

[0064] In one possible implementation, as shown in Figures 4 and 5, when electronic device 100a is operating, Cgs increases non-linearly with the increase of the voltage of the first gate G1. Since the source s2 of the second HEMT device M2 is connected to the first gate G1, Csg decreases non-linearly with the increase of the voltage of the first gate G1. Thus, the changing trends of Cgs and Csg are opposite, approximately complementary, allowing the sum of the capacitance values ​​of Cgs and Csg to be considered constant with the change of the voltage of the first gate G1.

[0065] Understandably, due to factors such as process conditions and control methods, some deviations or errors may exist in practical applications. This may cause the statement described above that "the sum of the capacitance values ​​of Cgs and Csg remains constant as the voltage of the first gate G1 changes" to be incompletely accurate. For example, as an example, the "remains constant" described above could mean that the sum of the capacitance values ​​of Cgs and Csg is at its maximum value C. max and minimum value C min The difference C between them max -C min When the application requirement is met within the range [0, ΔC], the sum of the capacitance values ​​of Cgs and Csg can be considered constant with changes in the voltage of the first gate G1. Here, ΔC is a margin, for example, a value greater than zero, to identify that even with small fluctuations in the sum of the capacitance values ​​of Cgs and Csg, it can still be considered that the sum of the capacitance values ​​of Cgs and Csg remains constant with changes in the voltage of the first gate G1. Since different application scenarios have different sensitivities to fluctuations in the sum of the capacitance values ​​of Cgs and Csg, the value of ΔC can be designed based on the actual application scenario. For example, in some application scenarios, fluctuations in the sum of the capacitance values ​​of Cgs and Csg have a smaller impact on efficiency and linearity, making these application scenarios less sensitive to fluctuations in the sum of the capacitance values ​​of Cgs and Csg, thus allowing for a larger value for ΔC. For example, in some application scenarios, fluctuations in the sum of the capacitance values ​​of Cgs and Csg have a significant impact on efficiency and linearity, making these applications highly sensitive to fluctuations in the sum of the capacitance values ​​of Cgs and Csg. In such cases, the value of ΔC can be set smaller. Therefore, the "remaining unchanged" relationship described above, as long as it roughly meets the above conditions, falls within the scope of protection of this application.

[0066] And, the first HEMT device needs to amplify radio frequency signals, and in view of radio frequency performance, a grounding hole needs to be arranged in the structure of the first HEMT device, so that the source electrode of the first HEMT device is grounded through the grounding hole, so that the area of the source electrode of the first HEMT device is usually set to be larger. However, the second HEMT device is arranged to compensate for the gate-source capacitance Cgs of the first HEMT device, and the source electrode of the second HEMT device needs to be connected to the gate electrode of the first HEMT device, so that the source electrode of the second HEMT device does not need to be grounded. Therefore, the grounding hole can be cancelled in the structure of the second HEMT device, so as to realize very close layout of the first HEMT device and the second HEMT device. Based on this, the layout area of the electronic device can be maximally reduced, and the layout area of the electronic device can even be approximately equal to the layout area of the aforementioned HEMT device S1, so that the device area is hardly increased, and the cost is less affected.

[0067] In addition, one way to compensate for the gate-source capacitance Cgs in the prior art is to increase an input matching network outside the HEMT device S1, so as to control the input second harmonic through the input matching network. The disadvantage is that the peak efficiency is affected due to the limitation of the second harmonic gamma value. Moreover, this way is also limited by the bandwidth, and different frequency bands need to be designed with separate input matching networks. In addition, the way of matching with the fundamental wave also restricts each other, affecting the matching bandwidth and insertion loss. The electronic device in the embodiment of the application can keep the sum of Cgs and Csg unchanged with the change of the voltage of the first gate G1, so that the input matching network for controlling the second harmonic does not need to be additionally arranged, and only the input matching network for controlling the fundamental wave needs to be arranged, so that the input matching network layout area for controlling the second harmonic is saved, and the pain points of the traditional harmonic control method, i.e., the gamma value and the wideband matching affecting the peak efficiency, are solved, the peak efficiency is improved, and the higher the frequency, the more obvious the effect.

[0068] In addition, another way to compensate for the gate-source capacitance Cgs in the prior art is to increase additional electrical elements, such as a metal-semiconductor-metal (MSM) varactor diode and a capacitor structure. The disadvantage is that the use area is greatly increased due to the increase of the additional electrical elements. The electronic device in the embodiment of the application compensates for Cgs based on the form of combination of multiple HEMT devices, so that the layout area of the electronic device can be maximally reduced, and miniaturization can be realized.

[0069] In a possible implementation of the present application, the first gate, the second gate, the source and the drain of the electronic device can be formed by using an additional conductive layer (for example, a metal layer), which is different from the gate, the source and the drain of the first HEMT device and the second HEMT device. In addition, the first gate, the second gate, the source and the drain of the electronic device can be formed by using the same conductive layer or different conductive layers, which is not limited herein.

[0070] In another possible implementation of the present application, the conductive layer can not be additionally provided, and the gate of the first HEMT device can be directly used as the first gate of the electronic device, the source of the first HEMT device can be directly used as the source of the electronic device, the drain of the first HEMT device can be directly used as the drain of the electronic device, and the gate of the second HEMT device can be directly used as the second gate of the electronic device.

[0071] In a possible implementation of the present application, the first HEMT device and the second HEMT device can be set as the same type of HEMT device, so that the gate-source capacitance Cgs of the first HEMT device can be relatively ideally compensated. In addition, in the process preparation, the first HEMT device and the second HEMT device can be simultaneously processed by using the same process, so that the first HEMT device and the second HEMT device can be formed by using the same material and the same process, and have good processing consistency, and further guarantee the compensation effect of the gate-source capacitance Cgs of the first HEMT device in mass production. It can be understood that the first HEMT device and the second HEMT device are formed by using the same material and the same process, which can be understood as that the film layer structures of the first HEMT device and the second HEMT device are the same, and the materials, processes, process preparation parameters and structure parameters of the film layers with the same function are the same.

[0072] In a possible implementation of the present application, the first HEMT device and the second HEMT device can be formed on the same substrate, that is, the first HEMT device and the second HEMT device share one substrate. Therefore, the first HEMT device and the second HEMT device can be simultaneously processed by using the same process, which not only can make the first HEMT device and the second HEMT device be formed by using the same material and the same process, and have good processing consistency, and guarantee the compensation effect of the gate-source capacitance Cgs of the first HEMT device in mass production, but also can have good high-temperature resistance and better reliability than other external compensation implementations.

[0073] In a possible implementation of the present application, the first HEMT device and the second HEMT device can both be GaN HEMT devices, because GaN HEMT devices have the advantages of high electron mobility, high breakdown voltage, high power density, excellent thermal stability, good frequency response, and the like.

[0074] In a possible implementation of the present application, the first HEMT device and the second HEMT device can both be GaAs HEMT devices, because GaAs HEMT devices have the advantages of high frequency, high speed, low noise, low power consumption, low cost, and the like.

[0075] In another possible implementation of the present application, the first HEMT device and the second HEMT device can both be AlN HEMT devices, because AlN HEMT devices have the advantages of high electron mobility, excellent electrical performance, and high reliability, and the like.

[0076] In yet another possible implementation of the present application, the first HEMT device and the second HEMT device can both be SiC HEMT devices, because SiC HEMT devices have the advantages of high critical breakdown field, high electron mobility, high thermal conductivity, good radiation resistance and chemical stability, and the like, and can directly use a thermal oxidation process to grow a silicon dioxide insulating layer on the surface.

[0077] In yet another possible implementation of the present application, the first HEMT device and the second HEMT device can both be Ga2O3 HEMT devices, because Ga2O3 HEMT devices have the advantages of high electric field resistance, excellent direct current (DC) and radio frequency (RF) performance, and suitability for cost-effective future high-speed RF applications, and the like.

[0078] The above is merely an example of the specific types of the first HEMT device and the second HEMT device, and in specific implementation, the specific types of the first HEMT device and the second HEMT device are not limited to the above types provided in the embodiments of the present application, but can also be other HEMT device types known by those skilled in the art based on the same concept, which are not limited herein.

[0079] In a possible implementation of the present application, the electronic device in the embodiments of the present application can be a die, thereby having higher flexibility and convenience in application.

[0080] In another possible implementation manner of the present application, the electronic device in the embodiment of the present application can also be a packaged semiconductor device, and the first gate, the second gate, the source and the drain of the electronic device can be connected to different pins of the semiconductor device respectively, and the drain of the second HEMT device can not be connected to a pin of the semiconductor device, or the drain of the second HEMT device can be connected to a pin of the semiconductor device, but the pin connected to the drain of the second HEMT device is not electrically connected to an external component or circuit, or the pin connected to the drain of the second HEMT device is electrically connected to an external component or circuit, but the external component or circuit does not transmit voltage or current to the pin connected to the drain of the second HEMT device when the electronic device is working, so that the drain of the second HEMT device is electrically floating.

[0081] In addition, the control process of the voltage value of the control voltage received by the second gate G2 during the working process of the electronic device can have various control modes, which are illustrated below.

[0082] The first control mode is as follows:

[0083] The voltage value of the control voltage received by the second gate G2 is a fixed value, which reduces the complexity of voltage control. However, due to factors such as process conditions and control modes, there can be some deviations or errors in actual processes, which can cause the “fixed value” described above to be not completely accurate. For example, the “fixed value” described above can be the same within the error tolerance range. Of course, the “fixed value” can also be understood as “basically a fixed value” or “completely a fixed value”, so as long as the “fixed value” described above meets the above conditions, it belongs to the protection scope of the present application.

[0084] The second control mode is as follows:

[0085] With the increase of the working time of the electronic device, the gate-source capacitance Cgs of the first HEMT device M1 can drift to the right (i.e. positive drift), and the source-gate capacitance Csg of the second HEMT device M2 drifts to the left (i.e. negative drift). If the voltage value of the control voltage received by the second gate G2 is a fixed value, the change trend of the gate-source capacitance Cgs’ after the right drift and the source-gate capacitance Csg’ after the left drift will not be complementary, so that the sum of the capacitance values of the gate-source capacitance Cgs’ and the source-gate capacitance Csg’ cannot be considered as remaining unchanged with the change of the voltage of the first gate G1. However, during the working process of the electronic device, the source-gate capacitance of the second HEMT device M2 can drift to the left or to the right by changing the voltage value of the control voltage of the second gate G2.

[0086] For example, referring to FIG. 6, FIG. 6 illustrates a relationship between a voltage value of a control voltage received by the second gate G2 and the source-gate capacitance Csg, where the horizontal axis represents voltage and the vertical axis represents capacitance value, Csg1 represents the source-gate capacitance when the voltage value of the control voltage is V1, Csg2 represents the source-gate capacitance Csg when the voltage value of the control voltage is V2, Csg3 represents the source-gate capacitance when the voltage value of the control voltage is V3, Csg4 represents the source-gate capacitance Csg when the voltage value of the control voltage is V4, Csg5 represents the source-gate capacitance when the voltage value of the control voltage is V5, Csg6 represents the source-gate capacitance Csg when the voltage value of the control voltage is V6, and Csg7 represents the source-gate capacitance when the voltage value of the control voltage is V7. Moreover, V1 to V7 gradually increase in value. Thus, as the voltage value of the control voltage increases, the source-gate capacitance Csg1 to Csg7 can gradually drift to the right (i.e., positive drift). Moreover, Cgs' in FIG. 6 represents the gate-source capacitance after drift. Based on this, in order to compensate for the gate-source capacitance Cgs' after drift, the voltage value of the control voltage received by the second gate G2 can be adjusted based on the cumulative working time of the electronic device, so that when the gate-source capacitance Cgs drifts to Cgs', the sum of the capacitance values of the source-gate capacitance Csg and the gate-source capacitance Cgs' can also be considered to remain unchanged as the voltage of the first gate G1 changes.

[0087] For example, referring to FIG. 7, FIG. 7 is a schematic diagram of the cumulative working time, the working time threshold, and the voltage value of the control voltage in an embodiment of the present application. The plurality of working time thresholds can include a first working time threshold t th1 and a second working time threshold t th2 , and t th2 > t th1 . Moreover, the cumulative working time t u of the electronic device gradually increases over time, and during a certain period of t u < t th1 , the voltage value of the control voltage is fixed at the current voltage value VDC0. As time goes on, when t u ≥ t th1 , the voltage value of the control voltage increases from the current voltage value VDC0 to a first target voltage value VDC1. Moreover, during a period of t th1 ≤ t u ≤ t th2 , the voltage value of the control voltage is fixed at the first target voltage value VDC1. As time goes on, when t u ≥ t th2 , the voltage value of the control voltage increases from the first target voltage value VDC1 to a second target voltage value VDC2. Moreover, during a period of tu ≥t th2 In a certain period, the voltage value of the control voltage is fixed as the second target voltage value VDC2. Thus, during the use of the electronic device, by setting the step-up working duration threshold, the voltage value of the control voltage can be step-up, and the effect of compensating the gate-source capacitance Cgs of the first HEMT device M1 is further ensured.

[0088] In addition, ΔV1 represents the difference between VDC1 and VDC0, and ΔV2 represents the difference between VDC1 and VDC2. Wherein, |ΔV2| can be equal to |ΔV1|, so that the same step length can be used to increase the working duration threshold. Or, |ΔV2| can be greater than |ΔV1|, so that the step length can be increased to increase the working duration threshold, or |ΔV2| can be less than |ΔV1|, so that the step length can be decreased to increase the working duration threshold.

[0089] It can be understood that in actual application, 2, 3, 4 or more gradually increasing working duration thresholds can be set, wherein when any two adjacent working duration thresholds in value satisfy the relationship between the first working duration threshold and the second working duration threshold, the voltage value of the control voltage can be increased, which is not described in detail here. Of course, in actual application, one working duration threshold can also be set, which satisfies the relationship of the first working duration threshold, which is not described in detail here.

[0090] In addition, the cumulative working duration of the electronic device can be the cumulative duration of the electronic device in the working state. And the working duration threshold can be several minutes, several hours to several hours, several days to several days, etc. The specific value of the working duration threshold can be determined according to the actual application scene, which is not limited here.

[0091] The third control mode:

[0092] The gate-source capacitance Cgs of the first HEMT device M1 can be periodically collected. If the gate-source capacitance Cgs of the first HEMT device M1 drifts to the right as Cgs', the voltage value of the control voltage received by the second gate G2 is adjusted, so that when the gate-source capacitance Cgs drifts to Cgs', the sum of the capacitance values of the source-gate capacitance Csg and the gate-source capacitance Cgs' can be considered as unchanged with the change of the voltage of the first gate G1.

[0093] FIG. 8 is another circuit diagram of the electronic device according to an embodiment of the present application. With reference to FIG. 8, another possible embodiment is provided, which is a variation of the above-mentioned embodiments. The same parts of this embodiment are not described here again, and the difference is that the electronic device includes a plurality of second HEMT devices and a plurality of second gates. The number of the plurality of second HEMT devices is the same as the number of the plurality of second gates. One of the plurality of second HEMT devices and one of the plurality of second gates form a device group, so that the electronic device includes a plurality of device groups. The second gate and the gate of the second HEMT device in the same device group are connected to each other. Thus, more flexible control can be achieved. For example, the device group can be set to two, three, four or more, and the specific number of the device group can be determined according to the application scenario, which is not limited here. The following is described by taking two device groups Z1 and Z2 as an example.

[0094] With reference to FIG. 8, the electronic device 100b includes two second HEMT devices M2_1 and M2_2 and two second gates G2_1 and G2_2. The second HEMT device M2_1 and the second gate G2_1 form a device group Z1, and the gate of the second HEMT device M2_1 and the second gate G2_1 are connected to each other. In addition, the second HEMT device M2_2 and the second gate G2_2 form another device group Z2, and the gate of the second HEMT device M2_2 and the second gate G2_2 are connected to each other. In addition, the source s2 of the second HEMT device M2_1 and M2_2 is connected to the gate s1 of the first HEMT device M1 and the first gate G1, respectively, and the drain d2 of the second HEMT device M2_1 and M2_2 is electrically floating. Thus, by setting the second HEMT device M2_1 and M2_2, the compensation of the gate-source capacitance Cgs of the first HEMT device M1 can be achieved, and the efficiency and linearity can be improved.

[0095] In a possible implementation manner of the present application, the second gates G2_1 and G2_2 are independent of and not connected to each other, so that the second gates G2_1 and G2_2 can independently receive control voltages. That is, the control voltage received by the second gate G2_1 cannot be transmitted to the second gate G2_2 through the second gate G2_1, and the control voltage received by the second gate G2_2 cannot be transmitted to the second gate G2_1 through the second gate G2_2.

[0096] In another possible implementation manner of the present application, the second gates G2_1 and G2_2 are connected to each other, so that the second gates G2_1 and G2_2 can receive the same control voltage.

[0097] Exemplarily, when the first gate G1, the second gate G2_1 and G2_2, the source S and the drain D of the electronic device 100b are formed by additional conductive layers (for example, metal layers), the second gate G2_1 and G2_2 are independent of each other and not connected to each other, and the gate g2 of the second HEMT device M2_1 and the gate g2 of the second HEMT device M2_2 are independent of each other and not connected to each other.

[0098] Exemplarily, the conductive layers can not be additionally provided, and the gate g2 of the second HEMT device M2_1 is taken as the second gate G2_1 of the electronic device 100b, the gate g2 of the second HEMT device M2_2 is taken as the second gate G2_2 of the electronic device 100b, and the gate g2 of the second HEMT device M2_1 and the gate g2 of the second HEMT device M2_2 are independent of each other and not connected to each other.

[0099] Exemplarily, the drain d2 of the second HEMT device M2_1 and M2_2 can be connected to each other or can be provided to be insulated from each other. The description of the drain d2 of the second HEMT device M2_1 and M2_2 being electrically floating can refer to the description of the second HEMT device M2 above, and will not be repeated here.

[0100] In the working process of the electronic device, the second gate G2 receiving the control voltage can have various implementation manners, which will be exemplarily described below.

[0101] The first implementation manner is:

[0102] The second gate G2_1 and G2_2 alternately receive the control voltage, that is, the second gate G2_1 and G2_2 receive the control voltage in time division. For example, referring to FIG. 9, FIG. 9 exemplarily shows a schematic diagram of two second gates G2_1 and G2_2 receiving the control voltage in time division in the embodiment of the present application, cs G2_1 represents the signal of the second gate G2_1, cs G2_2 represents the signal of the second gate G2_2, and the solid line represents that the second gate G2_1 and G2_2 receives the control voltage, and the dashed line represents that the second gate G2_1 and G2_2 is not receiving the control voltage and is electrically floating. For example, the n th time period f n to the n+3 th time period f n+3 , the second gate G2_1 receives the control voltage V n , and the second gate G2_2 is electrically floating and does not receive the control voltage. In the n+1 th time period f G2_1 , the second gate G2_2 receives the control voltage V n+1 , and the second gate G2_1 is electrically floating and does not receive the control voltage. In the n+2 th time period f G2_2 , the second gate G2_1 receives the control voltage V n+2In the n time period f G2_1 , the second gate G2_1 receives the control voltage V n+3 , and the second gate G2_2 is electrically floating and does not receive the control voltage. In the n+3 time period f G2_2 , the second gate G2_2 receives the control voltage V n , and the second gate G2_1 is electrically floating and does not receive the control voltage. In this way, when the second gate G2_1 is loaded with the control voltage, the second gate G2_2 is not loaded with the control voltage, which is beneficial to the recovery of the source-gate capacitance Csg of the second HEMT device M2_2; when the second gate G2_2 is loaded with the control voltage, the second gate G2_1 is not loaded with the control voltage, which is beneficial to the recovery of the source-gate capacitance Csg of the second HEMT device M2_1, so that the source-gate capacitance Csg of the second HEMT devices M2_1 and M2_2 can be alternately recovered, thereby improving the stability and service life of the devices.

[0103] Exemplarily, the duration of each of the n time period f n to the n+3 time period f n+3 may be the same. Alternatively, the duration of some of the n time period f n to the n+3 time period f n+3 is the same, and the duration of some of the n time period f n to the n+3 time period f n+3 is different. Alternatively, the duration of each of the n time period f ath to the n+3 time period f ath may be different.

[0104] Exemplarily, a voltage receiving duration threshold t ath may be set, and when the second gate G2_1 receives the control voltage, the cumulative voltage receiving duration t1 of the second gate G2_1 receiving the control voltage is collected, and t1 is compared with that. If t1≥t ath , the second gate G2 receiving the control voltage is switched from the second gate G2_1 to the second gate G2_2. Similarly, when the second gate G2_2 receives the control voltage, the cumulative voltage receiving duration t2 of the second gate G2_2 receiving the control voltage is collected, and t2 is compared with that. If t2≥t ath , the second gate G2 receiving the control voltage is switched from the second gate G2_2 to the second gate G2_1. Exemplarily, the voltage receiving duration threshold may be several minutes, several hours to several hours, several days to several days, etc. The specific value of the voltage receiving duration threshold may be determined according to the actual application scenario, which is not limited herein.

[0105] In a possible implementation of the present application, the voltage value of the control voltage received by the second gate G2_1, G2_2 can be kept as a fixed value, thereby reducing the complexity of voltage control. In addition, since the second gate G2_1, G2_2 receives the control voltage in time division, the source-gate capacitance Csg of the second HEMT device M2_1, M2_2 can be alternately recovered, thereby achieving the effect of compensating the gate-source capacitance Cgs of the first HEMT device M1 without changing the voltage value of the control voltage. For example, the voltage value of the control voltage received by the second gate G2_1, G2_2 can be the same or different, which is not limited herein.

[0106] In another possible implementation of the present application, the voltage value of the control voltage received by the second gate G2_1, G2_2 can be adjusted in combination with the second control mode or the third control mode, which is not described herein in detail.

[0107] The second implementation mode is as follows:

[0108] The second gate G2_1, G2_2 synchronously receives the control voltage, that is, the second gate G2_1, G2_2 simultaneously receives the control voltage. For example, the voltage value of the control voltage received by the second gate G2_1, G2_2 can be adjusted in combination with the second control mode or the third control mode during the process of receiving the control voltage by the second gate G2_1, G2_2, which is not described herein in detail. Alternatively, the voltage value of the control voltage received by the second gate G2_1, G2_2 can be kept as a fixed value, thereby reducing the complexity of voltage control.

[0109] Based on the same concept, in specific applications, the electronic device in the embodiments of the present application can replace the HEMT device S1 and be applied to a power amplifier. In addition, the power amplifier needs to be provided with a control voltage input end to connect the second gate G2 of the electronic device with the control voltage input end.

[0110] Fig. 10A is a structural schematic diagram of a power amplifier in an embodiment of the present application. Referring to Fig. 10A, the power amplifier can include a radio frequency signal input end RfI, a radio frequency signal output end RfO, a control voltage input end CS, a ground end GND, and an electronic device. In Fig. 10A, an example structure including one electronic device shown in Fig. 4 is illustrated. Exemplarily, the first gate G1 of the electronic device 100a is connected to the radio frequency signal input end RfI, the second gate G2 of the electronic device 100a is connected to the control voltage input end CS, the source S of the electronic device 100a is connected to the ground end GND, and the drain D of the electronic device 100a is connected to the radio frequency signal output end RfO. Since the electronic device 100a has good performance, the power amplifier including the electronic device 100a also has good performance. The principle of solving problems of the power amplifier is similar to that of the electronic device 100a, and therefore the implementation and technical effects of the power amplifier can refer to those of the electronic device 100a, and the repeated parts will not be described herein.

[0111] Fig. 10B is a structural schematic diagram of another power amplifier in an embodiment of the present application. Referring to Fig. 10B, the power amplifier can include a radio frequency signal input end RfI, a radio frequency signal output end RfO, control voltage input ends CS_1 and CS_2, a ground end GND, and one electronic device 100b. In Fig. 10B, an example structure including one electronic device 100b shown in Fig. 8 is illustrated. When the second gates G2_1 and G2_2 of the electronic device 100b including two device groups are independent of each other, the power amplifier can include two control voltage input ends CS_1 and CS_2. In order to flexibly control different device groups, the control voltage input ends CS_1 and CS_2 can be independent of and not connected to each other, so as to independently input control voltages to the second gates G2_1 and G2_2. Exemplarily, the first gate G1 of the electronic device 100b is connected to the radio frequency signal input end RfI, the second gate G2_1 of the electronic device 100b is connected to the control voltage input end CS_1, the second gate G2_2 of the electronic device 100b is connected to the control voltage input end CS_2, the source S of the electronic device 100b is connected to the ground end GND, and the drain D of the electronic device 100b is connected to the radio frequency signal output end RfO. Since the electronic device 100b has good performance, the power amplifier including the electronic device 100b also has good performance. The principle of solving problems of the power amplifier is similar to that of the electronic device 100b, and therefore the implementation and technical effects of the power amplifier can refer to those of the electronic device 100b, and the repeated parts will not be described herein.

[0112] In another possible implementation of the present application, when the electronic device 100b includes two device groups, and the second gate G2_1 and G2_2 are connected to each other, referring to FIG. 10C, which is a structural schematic diagram of another power amplifier in the embodiments of the present application, the power amplifier can also include one control voltage input terminal CS, and the second gate G2_1 and G2_2 are connected to the same control voltage input terminal CS, so that the same control voltage can be input to the second gate G2_1 and G2_2.

[0113] In addition, FIG. 10A and FIG. 10B respectively take one electronic device as an example for illustration. In another possible implementation of the present application, the power amplifier can also include two, three or more electronic devices in the embodiments of the present application, and the specific implementation can refer to the implementation of the power amplifier including one electronic device, which will not be described in detail herein.

[0114] The above merely provides the specific implementation of the present application, but the protection scope of the present application is not limited to this. Any person skilled in the art can easily think of the changes or replacements within the technical scope disclosed by the present application, which should be covered within the protection scope of the present application.

Claims

1. An electronic device, characterized in that, Comprising: a first high electron mobility transistor (HEMT) device, a second HEMT device, and a first gate, a second gate, a source and a drain of the electronic device; the first gate connects a gate of the first HEMT device and a source of the second HEMT device, the source of the electronic device connects a source of the first HEMT device, the drain of the electronic device connects a drain of the first HEMT device, the second gate connects a gate of the second HEMT device, and a drain of the second HEMT device is electrically floating.

2. Electronic device according to claim 1, characterized in that The electronic device comprises one second HEMT device and one second gate.

3. Electronic device according to claim 1, characterized in that The electronic device comprises a plurality of second HEMT devices and a plurality of second gates, the number of the plurality of second HEMT devices is the same as the number of the plurality of second gates, one second HEMT device in the plurality of second HEMT devices and one second gate in the plurality of second gates form a device group, the electronic device comprises a plurality of device groups, the gate of the second HEMT device and the second gate in the same device group are connected to each other, the source of the second HEMT device in each device group is connected to the gate of the first HEMT device respectively, and the drain of the second HEMT device in each device group is electrically floating. The second gates in different device groups are independent of each other, or the second gates in different device groups are connected to each other.

4. Electronic device according to any of claims 1-3, characterized in that The first HEMT device and the second HEMT device are of the same type, and the first HEMT device and the second HEMT device are formed on the same substrate.

5. Electronic device according to claim 4, characterized in that The first HEMT device and the second HEMT device are of one of the following types: GaN HEMT device, GaAs HEMT device, AlN HEMT device, SiC HEMT device, Ga2O3 HEMT device.

6. A method of operating an electronic device according to any one of claims 1-5, characterized by, Comprising: The first gate receives a radio frequency signal, the second gate receives a control voltage, the source of the electronic device receives a ground voltage, and the drain of the electronic device outputs a radio frequency signal. The sum of the capacitance values of a gate-source capacitance of the first HEMT device and a source-gate capacitance of the second HEMT device remains unchanged with the change of the voltage of the first gate, the gate-source capacitance is the capacitance between the gate and the source of the first HEMT device, and the source-gate capacitance is the capacitance between the source and the gate of the second HEMT device.

7. The method of working according to claim 6, characterized in that, The source-gate capacitance of the second HEMT device decreases nonlinearly with the increase of the voltage of the first gate.

8. The method of working according to claim 6 or 7, characterized in that, When the electronic device comprises a plurality of device groups, each device group in the plurality of device groups comprises one second HEMT device and one second gate connected to each other; The plurality of second gates comprises a first part of second gates and a second part of second gates, and the first part of second gates and the second part of second gates do not contain each other; The working method further comprises: The first part of the second gate and the second part of the second gate alternately receive the control voltage; Wherein, when the second gate receiving the control voltage is the first part of the second gate, the second part of the second gate is electrically floating, and when the second gate receiving the control voltage is the second part of the second gate, the first part of the second gate is electrically floating.

9. The method of any of claims 6-8, wherein, A plurality of working time thresholds are set, the plurality of working time thresholds gradually increase in value, the plurality of working time thresholds include a first working time threshold and a second working time threshold adjacent in value, and the second working time threshold is greater than the first working time threshold. The working method further comprises: The cumulative working time of the electronic device is greater than or equal to the first working time threshold, and the voltage value of the control voltage is increased from the current voltage value to the first target voltage value; The cumulative working time of the electronic device is greater than or equal to the second working time threshold, and the voltage value of the control voltage is increased from the first target voltage value to the second target voltage value.

10. The method of any of claims 6-8, wherein, The voltage value of the control voltage is a fixed value.

11. A power amplifier, characterized by The electronic device comprises a radio frequency signal input end, a radio frequency signal output end, a control voltage input end, a ground end, and at least one electronic device according to any one of claims 1-5; The first gate of the electronic device is connected to the radio frequency signal input end, the second gate of the electronic device is connected to the control voltage input end, the source of the electronic device is connected to the ground end, and the drain of the electronic device is connected to the radio frequency signal output end.

12. The power amplifier of claim 11, wherein, When the electronic device comprises a plurality of device groups, each device group in the plurality of device groups comprises one second HEMT device and one second gate; The second gates in different device groups are independent of each other, and the second gates in different device groups are connected to different control voltage input ends, and the control voltage input ends connected to the second gates in different device groups are independent of each other; or, The second gates in different device groups are connected to each other, and the second gates in different device groups are connected to the same control voltage input end.

13. A communication device, characterized by It comprises: A communication interface, a filter, and a power amplifier according to claim 11 or 12, the power amplifier being connected between the communication interface and the filter.

14. The communication device of claim 13, wherein, It further comprises: A baseband unit connected to the communication interface. The baseband unit is connected to the communication interface.

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