Resin composition, cured film, and electronic device and information terminal provided with same

Abstract

The purpose of the present invention is to provide a resin composition capable of yielding a cured film having excellent chemical resistance and suppressed film thickness variation upon contact with a chemical solution, the resin composition also having excellent storage stability. Provided is a resin composition comprising (A) a siloxane resin, (B) a thermal crosslinking agent, and (C) a thermal base generator, wherein the thermal crosslinking agent (B) is a compound having four or more methylol groups or methoxymethyl groups within a molecule.

Description

Resin composition, cured film, and electronic device or information terminal comprising the same.

[0001] This invention relates to resin compositions, cured films, and electronic devices and information terminals comprising them.

[0002] In recent years, technologies related to organic electroluminescent (hereinafter, "organic EL") displays, quantum dot displays, and microlight-emitting diode (hereinafter, "LED") displays have been actively researched for use in thin displays such as smartphones, TVs, smartwatches, and AR / VR terminals.

[0003] For example, the pixel division layer of organic EL displays, the partition and planarization layers of mini-LEDs and micro-LEDs, the planarization layer of thin-film transistors (hereinafter referred to as "TFTs") in various displays, and insulating films of other peripheral components all utilize cured films obtained by coating and curing resin compositions onto a substrate. Furthermore, when microfabrication is required, cured films of photosensitive resin compositions patterned by photolithography are used. These resin compositions require materials with minimal change in properties during storage and excellent storage stability to stabilize the device manufacturing process. In addition, these cured films require chemical resistance to resist stripping solutions and various solvents after film formation during the device manufacturing process.

[0004] For example, Patent Documents 1 and 2 disclose examples of resin compositions using polysiloxane as the resin.

[0005] International Publication No. 2016 / 052268, JP 2019-504909

[0006] The cured films described in Patent Documents 1 and 2 lack sufficient chemical resistance to the chemicals used in the manufacturing process of display devices, and suffer from the problem of film thickness fluctuations upon contact with the chemicals. As a result, damage occurs to the material surrounding the cured film, leading to a problem of insufficient luminescence characteristics in the display device. The present invention aims to provide a resin composition that yields a cured film with excellent chemical resistance, can suppress film thickness fluctuations upon contact with chemicals, and has excellent storage stability. Furthermore, the present invention aims to provide a cured film that can be incorporated into an electronic device exhibiting good luminescence characteristics.

[0007] The present invention has the following composition. [1] A resin composition containing (A) a siloxane resin, (B) a thermal crosslinking agent, and (C) a thermal base generator, wherein the (B) thermal crosslinking agent is a compound having 4 or more methylol groups or methoxymethyl groups in the molecule. [2] The resin composition according to [1] above, wherein the content of the (C) thermal base generator is 0.1 part by mass or more and 10 parts by mass or less with respect to 100 parts by mass of the (A) siloxane resin. [3] The resin composition according to [1] or [2] above, wherein the (C) thermal base generator is a compound containing a structure represented by Chemical Formula (1) or Chemical Formula (2).

[0008]

[0009] In Chemical Formula (1), R １ , R ２ , R ３ are each independently a hydrogen atom or a hydrocarbon group having 1 to 20 carbon atoms. In Chemical Formula (2), R ４ are each independently a hydrogen atom, a halogen atom, a hydrocarbon group having 1 to 20 carbon atoms, or a halogenated hydrocarbon group having 1 to 20 carbon atoms. [4] The resin composition according to [3] above, wherein in the Chemical Formula (1), R １ is a hydrocarbon group having 1 to 20 carbon atoms. [5] The resin composition according to [1], [3] or [4] above, wherein the (B) thermal crosslinking agent is a compound having 4 or more methoxymethyl groups in the molecule, and the content of the (C) thermal base generator is 10 parts by mass or less with respect to 100 parts by mass of the (A) siloxane resin. [6] The resin composition according to any one of [1] to [5] above, wherein the content of the (B) thermal crosslinking agent is 1.0 part by mass or more and 25 parts by mass or less with respect to 100 parts by mass of the (A) siloxane resin. [7] The resin composition according to any one of [1] to [6] above, wherein the (B) thermal crosslinking agent is a compound having a phenolic hydroxyl group. [8] The resin composition according to any one of [1] to [7] above, further containing (D) a photosensitizer. [9] The resin composition according to any one of [1] to [8] above, further containing (E1) a silane compound, and the (E1) silane compound has a structure represented by Chemical Formula (3).

[0010]

[0011] In Chemical Formula (3), Z １ represents an oxygen atom or a sulfur atom, and Y １ represents a sulfur atom or an amino group. R ５ , R ６ are each independently a monovalent organic group having 1 to 20 carbon atoms, and the monovalent organic group having 1 to 20 carbon atoms is an alkyl group, a cycloalkyl group, an alkoxy group, an aryl group, an allyl group, a vinyl group, a heterocyclic ring, an alkoxysilyl group, or a combination thereof. At least one of R ５ , R ６ is a monovalent organic group having 1 to 20 carbon atoms having an alkoxysilyl group.

[10] Further containing an (E2) silane compound, the (E2) silane compound is a compound having at least one selected from an alcoholic hydroxyl group, an epoxy group, an oxetanyl group, an acid anhydride group, or a carboxylic acid group, the resin composition according to any one of [1] to [9] above.

[11] The resin composition according to any one of [1] to

[10] above, wherein the (A) siloxane resin is a resin containing a repeating unit represented by Chemical Formula (4).

[0012]

[0013] In Chemical Formula (4), R ７It is a hydrocarbon group having 1 to 20 carbon atoms and having an alcoholic hydroxyl group, an epoxy group, an oxetanyl group, an acid anhydride group, a styryl group, or a carboxylic acid group.

[12] The resin composition according to [8] above, wherein the (D) photosensitizer contains a (D1) quinonediazide compound.

[13] Further containing (F) particles, the (F) particles including one or more selected from titanium oxide, zirconium oxide, aluminum oxide, talc, mica, white carbon, magnesium oxide, zinc oxide, barium carbonate, and composite compounds thereof. The resin composition according to any one of [1] to

[12] above.

[14] The resin composition according to

[13] above, wherein the (F) particles contain titanium oxide.

[15] A cured film obtained by curing the resin composition according to any one of [1] to

[14] above.

[16] An electronic device including the cured film according to

[15] above.

[17] The electronic device according to

[16] above, including a mini-LED or a micro-LED.

[18] An information terminal including the electronic device according to

[16] or

[17] above.

[0014] According to the resin composition of the present invention, it is possible to provide a resin composition that suppresses film thickness fluctuations during chemical solution contact, obtains a cured film with excellent chemical resistance, and has good storage stability. In addition, according to the electronic device of the present invention, it is possible to provide an electronic device that exhibits good light emission characteristics.

[0015] It is a schematic cross-sectional view of a micro-LED display having a partition layer and a planarization layer.

[0016] Hereinafter, embodiments for implementing the present invention will be described in detail. However, the present invention is not limited to the following embodiments and can be variously modified and implemented according to the purpose and application.

[0017] <Resin Composition> One embodiment of the present invention, "the First Invention," is a resin composition having the configuration of [1] above. A resin composition having this configuration can provide a cured film that is excellent in chemical resistance, can suppress film thickness fluctuations when in contact with chemicals, and has excellent storage stability. It can also provide a display device that exhibits good luminescence characteristics. If the film thickness fluctuates when in contact with chemicals due to insufficient chemical resistance, cracks and damage may occur in surrounding components such as metal wiring, inorganic insulating films, and light-emitting elements, causing luminescence failure of the display. Therefore, high chemical resistance is required for the cured film.

[0018] The reason why the resin composition of the present invention exhibits the above effects is presumed to be as follows. The resin composition of the present invention contains (A) a siloxane resin, (B) a thermal crosslinking agent, and (C) a thermal base generator. (B) The thermal crosslinking agent has four or more methylol groups or methoxymethyl groups in its molecule. (B) The thermal crosslinking agent forms a crosslinked structure with the siloxane resin and itself during thermal curing. In addition, (C) the thermal base generator improves the reactivity of the silanol groups contained in the siloxane resin during thermal curing and promotes the formation of siloxane bonds by condensation of silanol groups. For this reason, when (B) the thermal crosslinking agent and (C) the thermal base generator are included, a cured film with a large number of crosslinked structures can be obtained. Furthermore, since (B) the thermal crosslinking agent and (C) the thermal base generator promote crosslink formation during thermal curing, they are inactive at temperatures below room temperature, and the resin composition has excellent storage stability.

[0019] Furthermore, (B) the inclusion of a thermal crosslinking agent restricts the thermal motion of the siloxane resin during thermosetting due to crosslinking, thereby changing the higher-order structure formed by the siloxane resin. Siloxane resins are known to form higher-order structures such as cage, ladder, and random structures, but it is presumed that restricting thermal motion facilitates condensation reactions between silanol groups of adjacent resins, making it easier to form a ladder structure with high crosslinking density. In addition, (C) the inclusion of a thermal base generator prevents a decrease in the reactivity of silanol groups caused by the restriction of thermal motion, allowing the condensation reaction of silanol groups to proceed sufficiently. As a result, the siloxane resin forms a ladder structure, and a cured film with high crosslinking density can be obtained. From the above, it is presumed that the resin composition of the present invention yields a cured film with extremely high crosslinking density and excellent chemical resistance that can suppress film thickness fluctuations during contact with chemical solutions.

[0020] (Siloxane resin) The resin composition of the present invention comprises (A) a siloxane resin.

[0021] In the present invention, (A) siloxane resin refers to a polymer having siloxane bonds in its main chain skeleton. Examples of siloxane resins include resins obtained by hydrolyzing and dehydrating one or more selected from the group consisting of trifunctional organosilanes, tetrafunctional organosilanes, difunctional organosilanes, and monofunctional organosilanes.

[0022] (A) The siloxane resin preferably has a repeating unit represented by chemical formula (5). The repeating unit represented by chemical formula (5) is a trifunctional organosilane unit.

[0023]

[0024] In chemical formula (5), R ８ represents a monovalent organic group. Preferably, it is a C1-C10 alkyl group, a C4-C10 cycloalkyl group, a C6-C15 aryl group, a C1-C10 halogenated alkyl group, a C4-C10 halogenated cycloalkyl group, or a C6-C15 halogenated aryl group. The substituents and structures described above may have heteroatoms and may be either unsubstituted or substituted.

[0025] Compounds that give trifunctional organosilane units include, for example, methyltrimethoxysilane, methyltriethoxysilane, methyltri(methoxyethoxy)silane, methyltripropoxysilane, methyltriisopropoxysilane, methyltributoxysilane, ethyltrimethoxysilane, ethyltriethoxysilane, hexyltrimethoxysilane, octadecyltrimethoxysilane, octadecyltriethoxysilane, phenyltrimethoxysilane, phenyltriethoxysilane, phenyltripropoxysilane, and 3-aminopropyltrimethoxysilane. Examples include 3-aminopropyltriethoxysilane, N-(2-aminoethyl)-3-aminopropyltrimethoxysilane, 3-chloropropyltrimethoxysilane, γ-aminopropyltrimethoxysilane, γ-aminopropyltriethoxysilane, N-β-(aminoethyl)-γ-aminopropyltrimethoxysilane, β-cyanoethyltriethoxysilane, trifluoropropyltrimethoxysilane, trifluoropropyltriethoxysilane, perfluoropentyltrimethoxysilane, and perfluoropentyltriethoxysilane.

[0026] (A) The siloxane resin preferably contains 10 mol% to 100 mol% of trifunctional organosilane units, more preferably 30 mol% to 100 mol%, and particularly preferably 50 mol% to 100 mol%, relative to 100 mol% of the total repeating units consisting of the siloxane structure contained in the resin. Within the above range, it is possible to achieve excellent resolution as it can be easily mixed with other components.

[0027] Furthermore, (A) the siloxane resin may also preferably have a repeating unit represented by chemical formula (6). The repeating unit represented by chemical formula (6) is a tetrafunctional organosilane unit.

[0028]

[0029] Examples of compounds that yield tetrafunctional organosilane units include tetramethoxysilane, tetraethoxysilane, and tetrapropoxysilane.

[0030] (A) The siloxane resin preferably contains 1 mol% or more of tetrafunctional organosilane units, more preferably 3 mol% or more, and particularly preferably 5 mol% or more, based on 100 mol% of the total repeating units consisting of the siloxane structure contained in the resin. If it is 1 mol% or more, a cured film with a high crosslinking density can be obtained. Furthermore, it is preferably 40 mol% or less, more preferably 30 mol% or less, and particularly preferably 20 mol% or less. If it is 40 mol% or less, it is possible to prevent an excess of silanol groups and improve the storage stability of the resin composition.

[0031] Furthermore, (A) the siloxane resin may contain difunctional organosilane units and / or monofunctional organosilane units.

[0032] Examples of compounds that give a bifunctional organosilane unit include dimethyldimethoxysilane, dimethyldiethoxysilane, γ-aminopropylmethyldimethoxysilane, γ-aminopropylmethyldiethoxysilane, N-(2-aminoethyl)-3-aminopropylmethyldimethoxysilane, 3-chloropropylmethyldimethoxysilane, 3-chloropropylmethyldiethoxysilane, cyclohexylmethyldimethoxysilane, and octadecylmethyldimethoxysilane.

[0033] Examples of compounds that yield monofunctional organosilane units include trimethylmethoxysilane, trimethylethoxysilane, triethylmethoxysilane, triphenylmethoxysilane, diphenylmethylmethoxysilane, and diphenylmethylethoxysilane.

[0034] (A) The siloxane resin preferably contains 1 mol% or more of difunctional organosilane units, more preferably 5 mol% or more, and even more preferably 10 mol% or more, based on 100 mol% of the total repeating units consisting of the siloxane structure contained in the resin. It is also preferably 40 mol% or less, more preferably 30 mol% or less, and even more preferably 20 mol% or less. If it is 1 mol% or more, the storage stability of the resin composition can be improved. If it is 30 mol% or less, a cured film with a high crosslinking density can be obtained.

[0035] (A) The siloxane resin preferably contains monofunctional organosilane units of 1 mol% or more, more preferably 5 mol% or more, and even more preferably 10 mol% or more, based on 100 mol% of the total repeating units consisting of the siloxane structure contained in the resin. It is also preferably 40 mol% or less, more preferably 30 mol% or less, and even more preferably 20 mol% or less. If it is 1 mol% or more, the storage stability of the resin composition can be improved. If it is 30 mol% or less, a cured film with a high crosslinking density can be obtained.

[0036] Furthermore, (A) the siloxane resin is preferably a resin containing repeating units represented by chemical formula (4).

[0037]

[0038] In chemical formula (4), R ７ R is a hydrocarbon group having 1 to 20 carbon atoms, having an alcoholic hydroxyl group, an epoxy group, an oxetanyl group, an acid anhydride group, or a carboxylic acid group. ７ It may also be a styryl group.

[0039] (A) The siloxane resin contains repeating units represented by chemical formula (4), in chemical formula (4), R ７ If R is a hydrocarbon group having 1 to 20 carbon atoms, having an alcoholic hydroxyl group, epoxy group, oxetanyl group, acid anhydride group, or carboxylic acid group, then (A) the siloxane resin can easily form a crosslinked structure with (B) the thermal crosslinking agent, and chemical resistance can be further improved. Also, in chemical formula (4), R ７ If the group is a styryl group, (A) the siloxane resin can easily form a crosslinked structure, which can further improve chemical resistance.

[0040] Examples of compounds that give the repeating unit represented by chemical formula (4) include organosilane compounds having a carboxylic acid anhydride group, such as 3-trimethoxysilylpropyl succinic anhydride, 3-triethoxysilylpropyl succinic anhydride, 3-triphenoxysilylpropyl succinic anhydride, 3-trimethoxysilylpropylcyclohexyldicarboxylic acid anhydride, and 3-trimethoxysilylpropylphthalic acid anhydride; 3-(N,N-glycidyl)aminopropyltrimethoxysilane, 3-glycidoxypropyltrimethoxysilane Glycidoxymethyltrimethoxysilane, glycidoxymethyltriethoxysilane, α-glycidoxyethyltrimethoxysilane, α-glycidoxyethyltriethoxysilane, β-glycidoxypropyltrimethoxysilane, β-glycidoxypropyltriethoxysilane, γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropyltriethoxysilane, α-glycidoxybutyltrimethoxysilane, α-glycidoxybutyltriethoxysilane, β-glycidoxybutyltrimethoxysilane, β-Glycidoxybutyltriethoxysilane, γ-Glycidoxybutyltrimethoxysilane, γ-Glycidoxybutyltriethoxysilane, σ-Glycidoxybutyltrimethoxysilane, σ-Glycidoxybutyltriethoxysilane, (3,4-Epoxycyclohexyl)methyltrimethoxysilane, (3,4-Epoxycyclohexyl)methyltriethoxysilane, 2-(3,4-Epoxycyclohexyl)ethyltrimethoxysilane, 2-(3,4-Epoxycyclohexyl)ethyltriethoxysilane, 3-(3 Organosilane compounds having epoxy or oxetanyl groups, such as 4-epoxycyclohexyl)propyltrimethoxysilane, 3-(3,4-epoxycyclohexyl)propyltriethoxysilane, 4-(3,4-epoxycyclohexyl)butyltrimethoxysilane, 4-(3,4-epoxycyclohexyl)butyltriethoxysilane, 3-[(3-ethyl-3-oxetanyl)methoxy]propyltrimethoxysilane, and 3-[(3-ethyl-3-oxetanyl)methoxy]propyltriethoxysilane;Examples include organosilane compounds having a styryl group, such as styryltrimethoxysilane, styryltriethoxysilane, styryltri(methoxyethoxy)silane, styrylmethyldimethoxysilane, styrylmethyldiethoxysilane, and styrylmethyldi(methoxyethoxy)silane, and their hydrolysates. Examples of organosilane compounds having a carboxylic acid include compounds obtained by hydrolysis of the above-mentioned organosilane compounds having an acid anhydride group. Examples of organosilane compounds having an alcoholic hydroxyl group include compounds obtained by hydrolysis of the above-mentioned organosilane compounds having an epoxy group or an oxetanyl group.

[0041] (A) The siloxane resin preferably contains 1 mol% or more of the repeating units represented by chemical formula (4) relative to 100 mol% of the total repeating units consisting of the siloxane structure contained in the resin, more preferably 3 mol% or more, and even more preferably 5 mol% or more. It is also preferably 40 mol% or less, more preferably 30 mol% or less, and even more preferably 20 mol% or less. If it is 1 mol% or more, the crosslinking density between the siloxane resin and the thermal crosslinking agent is high, and chemical resistance can be further improved. If it is 40 mol% or less, excessive dissolution by the developer can be suppressed.

[0042] (A) From the viewpoint of improving the mechanical strength of the cured film, the siloxane resin preferably has organosilane units that include radical polymerizable groups.

[0043] Examples of radical polymerizable groups include styryl group, cinnamoyl group, maleimide group, nadiimide group, (meth)acryloyl group, vinyl group, allyl group, 2-methyl-2-propenyl group, crotonyl group, 2-methyl-2-butenyl group, 3-methyl-2-butenyl group, 2,3-dimethyl-2-butenyl group, ethynyl group, or 2-propargyl group.

[0044] Compounds that give organosilane units containing radical polymerizable groups include, for example, organosilane compounds having vinyl groups such as vinyltrimethoxysilane, vinyltriethoxysilane, and vinyltri(methoxyethoxy)silanesilane; organosilane compounds having α-methylvinyl groups such as vinylmethyldimethoxysilane, vinylmethyldiethoxysilane, and vinylmethyldi(methoxyethoxy)silane; organosilane compounds having allyl groups such as allyltrimethoxysilane, allyltriethoxysilane, allyltri(methoxyethoxy)silane, allylmethyldimethoxysilane, allylmethyldiethoxysilane, and allylmethyldi(methoxyethoxy)silane; and styryltrimethoxysilane, Examples include organosilane compounds having a styryl group, such as lyltriethoxysilane, styryltri(methoxyethoxy)silane, styrylmethyldimethoxysilane, styrylmethyldiethoxysilane, and styrylmethyldi(methoxyethoxy)silane; and organosilane compounds having a (meth)acryloyl group, such as γ-(meth)acryloylpropyltrimethoxysilane, γ-(meth)acryloylpropyltriethoxysilane, γ-(meth)acryloylpropyltri(methoxyethoxy)silane, γ-(meth)acryloylpropylmethyldimethoxysilane, γ-(meth)acryloylpropylmethyldiethoxysilane, and γ-(meth)acryloylpropyl(methoxyethoxy)silane.

[0045] (A) The siloxane resin preferably has organosilane units containing a condensed polycyclic structure, a condensed polycyclic heterocyclic structure, or an aromatic structure, from the viewpoint of improving sensitivity during exposure, more preferably has organosilane units containing a naphthyl group, anthracenyl group, biphenyl group, phenyl group, tolyl group, or methoxyphenyl group, and even more preferably has organosilane units containing a naphthyl group or anthracenyl group.

[0046] Examples of compounds that yield these organosilane units include naphthyltrimethoxysilane, naphthyltriethoxysilane, and naphthyltripoxysilane.

[0047] (A) The siloxane resin preferably has organosilane units to which (D) particles, described later, are bound, from the viewpoint of suppressing residue after development. The (A) siloxane resin having said organosilane units may collectively be referred to as "particle-containing siloxane resin" below. The particle-containing siloxane resin is preferably a resin obtained by hydrolyzing and dehydrating one or more selected from the group consisting of trifunctional organosilane, tetrafunctional organosilane, difunctional organosilane, and monofunctional organosilane in the presence of (D) particles. Examples and preferred descriptions of (D) particles are as described in the section on (D) particles below.

[0048] (A) Siloxane resins can be obtained by hydrolyzing an organosilane compound and then dehydrating the hydrolyzed product in the presence or absence of a solvent. Various conditions in the hydrolysis can be set to suit the physical properties appropriate for the intended application, taking into consideration the reaction scale, the size and shape of the reaction vessel, etc. Examples of various conditions include acid concentration, reaction temperature, and reaction time. Acid catalysts such as hydrochloric acid, acetic acid, formic acid, nitric acid, oxalic acid, hydrochloric acid, sulfuric acid, phosphoric acid, polyphosphate, polycarboxylic acids and their anhydrides, and ion exchange resins can be used in the hydrolysis reaction. Among these, an acidic aqueous solution containing one or more selected from the group consisting of formic acid, acetic acid, and phosphoric acid is preferred as the acid catalyst. When an acid catalyst is used in the hydrolysis reaction, the amount of acid catalyst added is preferably 0.01 parts by mass or more, and more preferably 0.05 parts by mass or more, per 100 parts by mass of the total organosilane compound used in the hydrolysis reaction, from the viewpoint of promoting hydrolysis more rapidly. On the other hand, from the viewpoint of appropriately adjusting the progress of the hydrolysis reaction, the amount of acid catalyst added is preferably 20 parts by mass or less, and more preferably 10 parts by mass or less, per 100 parts by mass of the total organosilane compound. Here, the total amount of organosilane compound refers to the amount including all of the organosilane compound, its hydrolysates, and their condensates, and the same applies hereinafter.

[0049] The hydrolysis reaction can be carried out in a solvent. The solvent can be appropriately selected considering the stability, wettability, and volatility of the resin composition. Examples of solvents include alcohols such as methanol, ethanol, propanol, isopropanol, butanol, isobutanol, t-butanol, pentanol, 4-methyl-2-pentanol, 3-methyl-2-butanol, 3-methyl-3-methoxy-1-butanol, and diacetone alcohol; glycols such as ethylene glycol and propylene glycol; ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monopropyl ether, propylene glycol monobutyl ether, propylene glycol mono-t-butyl ether, ethylene glycol dimethyl ether, ethylene glycol diethyl ether, and ethylene glycol dibutyl ether. Examples include ethers such as diethyl ether; ketones such as methyl ethyl ketone, acetylacetone, methyl propyl ketone, methyl butyl ketone, methyl isobutyl ketone, diisobutyl ketone, cyclopentanone, and 2-heptanone; amides such as dimethylformamide and dimethylacetamide; esters such as ethyl acetate, propyl acetate, butyl acetate, isobutyl acetate, ethylene glycol monoethyl ether acetate, propylene glycol monomethyl ether acetate, 3-methoxybutyl acetate, 3-methyl-3-methoxybutyl acetate, methyl lactate, ethyl lactate, and butyl lactate; aromatic or aliphatic hydrocarbons such as toluene, xylene, hexane, and cyclohexane; and γ-butyrolactone, N-methyl-2-pyrrolidone, and dimethyl sulfoxide. Two or more of these may be used.

[0050] Among these, diacetone alcohol, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether, propylene glycol monopropyl ether, propylene glycol monobutyl ether, propylene glycol mono-t-butyl ether, and γ-butyrolactone are preferred from the viewpoint of the permeability and crack resistance of the cured film.

[0051] If a solvent is generated by the hydrolysis reaction, it is also possible to perform hydrolysis without a solvent. After the hydrolysis reaction is complete, it is preferable to add a solvent to adjust the concentration to an appropriate level for the resin composition. Alternatively, after hydrolysis, it is possible to distill off all or part of the generated alcohol, etc., by heating and / or reduced pressure, and then add a suitable solvent.

[0052] When a solvent is used in the hydrolysis reaction, the amount of solvent added is preferably 50 parts by mass or more, and more preferably 80 parts by mass or more, per 100 parts by mass of the total organosilane compound, from the viewpoint of suppressing gel formation. On the other hand, from the viewpoint of allowing hydrolysis to proceed more rapidly, the amount of solvent added is preferably 500 parts by mass or less, and more preferably 200 parts by mass or less, per 100 parts by mass of the total organosilane compound. Furthermore, ion-exchanged water is preferred as the water used in the hydrolysis reaction. The amount of water can be set arbitrarily, but 1.0 to 4.0 moles per mole of total organosilane compound is preferred.

[0053] Methods for the dehydration condensation reaction include, for example, directly heating the silanol compound solution obtained by the hydrolysis of an organosilane compound. The heating temperature is preferably 50°C or higher and below the boiling point of the solvent, and the heating time is preferably 1 to 100 hours. In addition, reheating or the addition of a base catalyst may be performed to increase the degree of polymerization of the siloxane resin. Furthermore, depending on the purpose, after hydrolysis, an appropriate amount of the generated alcohol or the like may be distilled off and removed under heat and / or reduced pressure, and then a suitable solvent may be added.

[0054] From the viewpoint of storage stability of the resin composition, it is preferable that the siloxane resin solution after hydrolysis and dehydration condensation does not contain the catalyst, and the catalyst can be removed as needed. As for catalyst removal methods, water washing and treatment with ion exchange resin are preferred from the viewpoint of ease of operation and removal efficiency. Water washing is a method in which the siloxane resin solution is diluted with a suitable hydrophobic solvent, and the organic layer obtained by washing it several times with water is concentrated using an evaporator or the like. Treatment with ion exchange resin is a method in which the siloxane resin solution is brought into contact with a suitable ion exchange resin.

[0055] (A) From the viewpoint of coating properties, the weight-average molecular weight of the siloxane resin is preferably 1,000 or more, and more preferably 2,000 or more. If it is 1,000 or more, the viscosity necessary to control the film thickness when coating the resin composition can be obtained. On the other hand, from the viewpoint of developability, the weight-average molecular weight is preferably 50,000 or less, and more preferably 20,000 or less. If the weight-average molecular weight is 50,000 or less, the solubility in the alkaline developer necessary for pattern processing can be obtained. Here, the weight-average molecular weight in this invention refers to the polystyrene equivalent value measured by gel per emission chromatography (GPC).

[0056] In the resin composition of the present invention, the content of (A) siloxane resin can be arbitrarily set depending on the desired film thickness and application, but is preferably 10 parts by mass or more, more preferably 20 parts by mass or more, and even more preferably 30 parts by mass or more, per 100 parts by mass of the total solid content of the resin composition. Also, is preferably 80 parts by mass or less, more preferably 70 parts by mass or less, and even more preferably 80 parts by mass or less. If it is 10 parts by mass or more, good pattern processability can be obtained. If it is 80 parts by mass or less, high storage stability can be obtained. (Thermal Crosslinking Agent) The resin composition of the present invention contains (B) a thermal crosslinking agent. (B) The thermal crosslinking agent is a compound having four or more methylol groups or methoxymethyl groups in its molecule. That is, the resin composition of the present invention contains (B) a thermal crosslinking agent in which the total number of methylol groups and methoxymethyl groups in the molecule is four or more.

[0057] (B) The thermal crosslinking agent has four or more methylol groups or methoxymethyl groups. From the viewpoint of improving storage stability, it is more preferable to have four or more methoxymethyl groups. Furthermore, from the viewpoint of improving chemical resistance, it is more preferable to have six or more methylol groups or methoxymethyl groups.

[0058] (B) The thermal crosslinking agent is more preferably a compound having a phenolic hydroxyl group. Having a phenolic hydroxyl group is preferable because it allows the methylol group and methoxymethyl group to form a crosslinked structure with the phenol moiety in other molecules, thereby further improving chemical resistance. The (B) thermal crosslinking agent having a phenolic hydroxyl group is preferably a compound with a structure represented by chemical formulas (7) to (9).

[0059]

[0060] In chemical formulas (7) to (9), R ８ Each of these structures is independently represented by a hydrogen atom, a methylol group, or a methoxymethyl group, and is appropriately selected within a range where the molecule contains four or more methylol groups or methoxymethyl groups.

[0061] In chemical formula (7), S is the structure represented by chemical formula (10), chemical formula (11), or chemical formula (12).

[0062] In chemical formula (8), T is the structure represented by chemical formula (13) or chemical formula (14).

[0063] In chemical formula (9), U is the structure represented by chemical formula (15) or chemical formula (16).

[0064]

[0065] In chemical formulas (19) to (16), R ９ Each of these structures is independently represented by a hydrogen atom or an alkyl group having 1 to 10 carbon atoms. b indicates the bonding site.

[0066] Examples of structures represented by chemical formulas (10) to (16) include the compounds listed below.

[0067]

[0068]

[0069] Furthermore, (B) the thermal crosslinking agent may be a compound that does not contain a phenolic hydroxyl group. Examples of (B) thermal crosslinking agents that do not contain a phenolic hydroxyl group include the compounds listed below.

[0070]

[0071] (B) The content of the thermal crosslinking agent is preferably 1.0 part by mass or more, more preferably 3 parts by mass or more, and even more preferably 5 parts by mass or more, per 100 parts by mass of siloxane resin. Also, it is preferably 25 parts by mass or less, more preferably 20 parts by mass or less, and even more preferably 15 parts by mass or less. (B) If the content of the thermal crosslinking agent is 1.0 part by mass or more, the crosslinking density is high and the chemical resistance of the cured film is good. Also, if it is 25 parts by mass or less, the condensation of the silanol groups of the siloxane resin is not suppressed, the crosslinking density is high and the chemical resistance of the cured film is good.

[0072] Furthermore, (B) the thermal crosslinking agent may also be included (hereinafter referred to as "other thermal crosslinking agents"). Other thermal crosslinking agents refer to compounds having crosslinkable groups, cationic polymerizable groups, or anionic polymerizable groups that can react with resins, etc. Preferably, the other thermal crosslinking agents are compounds having one or more crosslinkable groups selected from the group consisting of alkoxyalkyl groups, hydroxyalkyl groups, epoxy groups, oxetanyl groups, and blocked isocyanate groups (hereinafter referred to as "specific crosslinkable groups").

[0073] The specific number of crosslinkable groups in other thermal crosslinking agents is preferably two or more per molecule, more preferably three or more, even more preferably four or more, and particularly preferably six or more. On the other hand, from the viewpoint of improving the reliability of the light-emitting element, the specific number of crosslinkable groups is preferably 12 or less per molecule, more preferably 10 or less, and even more preferably 8 or less.

[0074] The content of other thermal crosslinking agents is preferably 1.0 part by mass or more and 30 parts by mass or less per 100 parts by mass of the total solid content of the resin composition. (Thermal base generating agent) The resin composition of the present invention contains (C) a thermal base generating agent. (C) The thermal base generating agent is a compound that generates a base by bond cleavage, reaction, or activation upon heating. Examples of (C) thermal base generating agents include ionic compounds and nonionic compounds. Preferred ionic compounds include diazabicycloalkene salt compounds, triazabicycloalkene salt compounds, quaternary ammonium salt compounds, quaternary phosphonium salt compounds, guanidine salt compounds, and biguanide salt compounds. Preferred nonionic compounds include nitrobenzylcarbamate compounds, anthracenylcarbamate compounds, benzoin-based carbamate compounds, anthraquinone-based carbamate compounds, hydroxycinnamamide compounds, and coumarinamide compounds. (C) The thermal base generator is preferably a compound containing a structure represented by chemical formula (1) or chemical formula (2).

[0075]

[0076] In chemical formula (1), R １ , R ２ , R ３ Each of these is independently a hydrogen atom or a hydrocarbon group having 1 to 20 carbon atoms. In chemical formula (2), R ４ Each of these is independently a hydrogen atom, a halogen atom, a hydrocarbon group having 1 to 20 carbon atoms, and a halogenated hydrocarbon group having 1 to 20 carbon atoms.

[0077] (C) If the thermal base generator is a compound containing the structure represented by chemical formula (1) or chemical formula (2), the resin composition will have good storage stability. Furthermore, if the compound contains the structure represented by chemical formula (2), the sensitivity during exposure will be good.

[0078] (C) The thermobase generating agent is represented by chemical formula (1), where R １It is more preferable that the compound is a hydrocarbon group having 1 to 20 carbon atoms. With these compounds, the basicity of (C) the thermal base generator at room temperature is further suppressed, and unintended reactions of (A) the siloxane resin and (B) the thermal crosslinking agent can be suppressed, resulting in better storage stability and sensitivity during exposure of the resin composition.

[0079] Examples of compounds containing chemical formula (1) include the compounds listed below.

[0080]

[0081] Examples of compounds containing chemical formula (2) include the compounds listed below.

[0082]

[0083] (C) The content of the thermal base generator is preferably 0.10 parts by mass or more, more preferably 0.30 parts by mass or more, and even more preferably 0.50 parts by mass or more, per 100 parts by mass of siloxane resin. Also, it is preferably 10 parts by mass or less, more preferably 5 parts by mass or less, and even more preferably 3 parts by mass or less. If it is 0.10 parts by mass or more, the crosslinking density is high and the chemical resistance of the cured film is good. If it is 10 parts by mass or less, the storage stability of the resin composition is good.

[0084] (Photosensitive agent) The resin composition of the present invention may contain a (D) photosensitive agent. The inclusion of a (D) photosensitive agent is preferable because it imparts photosensitivity to the resin composition, enabling pattern processing by photolithography. A (D) photosensitive agent is a compound that imparts positive or negative photosensitivity to the composition by undergoing bond cleavage, reaction, or structural change upon exposure to generate another compound. The (D) photosensitive agent preferably contains one or more selected from the group consisting of (D1) quinone diazide compounds, (D2) photopolymerization initiators, and (D3) photoacid generators.

[0085] When imparting positive-type photosensitivity to a composition, the (D) photosensitive agent preferably contains (D1) a quinone diazide compound or (D3) a photoacid generator, and is particularly preferably (D1) a quinone diazide compound.

[0086] When imparting negative-type photosensitivity to the composition, it is preferable to include (D2) a photopolymerization initiator or (D3) a photoacid generator, and it is particularly preferable to include (D2) a photopolymerization initiator.

[0087] The (D1) quinone diazide compound undergoes a structural change upon exposure, generating indenecarboxylic acid and / or sulfoindenecarboxylic acid. Therefore, including the (D1) quinone diazide compound is suitable for positive-type pattern formation. During exposure, the acidic compound formed by the structural change of the (D1) quinone diazide compound selectively solubilizes the exposed areas of the film in the alkaline developer, resulting in a significant improvement in resolution after development.

[0088] (D2) The photopolymerization initiator is a compound that generates radicals by bond cleavage and / or reaction upon exposure. Including the (D2) photopolymerization initiator is preferable for negative pattern formation from the viewpoint of promoting radical polymerization. In particular, when other monomer compounds are included, even if only a small amount of radicals are generated during exposure, the radical polymerization of the monomer compounds and other compounds proceeds in a chain reaction, which is preferable as it significantly improves sensitivity during exposure.

[0089] (D3) The photoacid generator is a compound that generates acid by bond cleavage and / or reaction upon exposure. (D3) The photoacid generator is suitable for negative pattern formation when the resin has cationic polymerizable groups, from the viewpoint of promoting cationic polymerization upon exposure. On the other hand, when the resin has acidic groups protected by acid-dissociable groups, it is suitable for positive pattern formation from the viewpoint of releasing the acidic groups upon exposure, and the effect of improving sensitivity during exposure is significant.

[0090] (D1) The quinone diazide compound is not particularly limited, but a compound in which a compound having a phenolic hydroxyl group and a naphthoquinone diazide having a sulfonic acid group are bonded together to form a sulfonic acid ester group is preferred. Examples of compounds having a phenolic hydroxyl group used here include Bis-Z, BisOC-Z, BisOPP-Z, BisP-CP, Bis26X-Z, BisOTBP-Z, BisOCHP-Z, BisOCR-CP, BisP-MZ, BisP-EZ, Bis26X-CP, BisP-PZ, and BisP -IPZ, BisCR-IPZ, BisOCP-IPZ, BisOIPP-CP, Bis26X-IPZ, BisOTBP-CP, TekP-4HBPA (TekP-4HBPA) TrachysP-DO-BPA), TrisP-HAP, TrisP-PA, Phcc-AP, BisOFP-Z, BisRS-2P, BisPG-26X, Bi Examples include sRS-3P, BisOC-OCHP, BisPC-OCHP, Bis25X-OCHP, Bis26X-OCHP, BisOCHP-OC, Bis236T-OCHP, methylenethris-FR-CR, BisRS-26X, BisRS-OCHP (all trade names, manufactured by Honshu Chemical Industry Co., Ltd.), BIR-OC, BIP-PC, BIR-PC, BIR-PTBP, BIR-PCHP, BIP-BIOC-F, 4PC, BIR-BIPC-F, TEP-BIP-A (all trade names, manufactured by Asahi Organic Chemicals Co., Ltd.), 4,4'-sulfonyldiphenol (manufactured by Wako Pure Chemical Industries, Ltd.), BPFL (trade name, manufactured by JFE Chemical Corporation), and others.

[0091] Among these, examples of compounds having preferred phenolic hydroxyl groups include Bis-Z, BisP-EZ, TekP-4HBPA, TrisP-HAP, TrisP-PA, Phcc-AP, BisOCHP-Z, BisP-MZ, BisP-PZ, BisP-IPZ, BisOCP-IPZ, BisP-CP, BisRS-2P, BisRS-3P, BisP-OCHP, methylenethris-FR-CR, BisRS-26X, BIP-PC, BIR-PC, BIR-PTBP, BIR-BIPC-F, 4,4'-sulfonyldiphenol, and BPFL. Among these, particularly preferred compounds having a phenolic hydroxyl group include, for example, Bis-Z, TekP-4HBPA, TrisP-HAP, TrisP-PA, Phcc-AP, BisRS-2P, BisRS-3P, BIR-PC, BIR-PTBP, BIR-BIPC-F, 4,4'-sulfonyldiphenol, and BPFL.

[0092] It is preferable to introduce 4-naphthoquinone diazidosulfonic acid or 5-naphthoquinone diazidosulfonic acid via ester bonds to these compounds having phenolic hydroxyl groups.

[0093] (D2) The photopolymerization initiator is preferably a benzyl ketal compound, an α-hydroxyketone compound, an α-aminoketone compound, a biimidazole compound, a phosphine oxide compound, an oxime ester compound, an acridine compound, a titanocene compound, a benzophenone compound, an acetophenone compound, an aromatic ketoester compound, or a benzoic acid ester compound. From the viewpoint of improving sensitivity during exposure and improving the reliability of the light-emitting element, an α-hydroxyketone compound, an α-aminoketone compound, a biimidazole compound, a phosphine oxide compound, or an oxime ester compound is more preferred, and an oxime ester compound is even more preferred.

[0094] (D3) Examples of photoacid generators include ionic compounds and nonionic compounds. As ionic compounds, triorganosulfonium salt compounds are preferred examples. As nonionic compounds, halogen-containing compounds, diazomethane compounds, sulfone compounds, sulfonic acid ester compounds, carboxylic acid ester compounds, sulfonimide compounds, phosphate ester compounds, or sulfonebenzotriazole compounds are preferred examples.

[0095] (D) The content of the photosensitive agent is preferably 1.0 part by mass or more, when the total amount of (A) siloxane resin is 100 parts by mass, from the viewpoint of improving sensitivity during exposure. On the other hand, the content of (D) the photosensitive agent is preferably 30 parts by mass or less, from the viewpoint of suppressing residue after development.

[0096] (Silane Compounds) The resin composition of the present invention may contain an (E1) silane compound. Including an (E1) silane compound is preferable because it can improve adhesion to the substrate. The (E1) silane compound is a compound having the structure represented by chemical formula (3).

[0097]

[0098] In chemical formula (3), Z １ Y represents an oxygen atom or a sulfur atom. １ R represents a sulfur atom or an amino group. ５ , R ６ Each of these is independently a monovalent organic group having 1 to 20 carbon atoms, and R ５ , R ６ At least one of them is a monovalent organic group having 1 to 20 carbon atoms and containing an alkoxysilyl group.

[0099] In chemical formula (3), R ５ and / or R ６ The monovalent organic groups having 1 to 20 carbon atoms that give this property are alkyl groups, cycloalkyl groups, alkoxy groups, aryl groups, allyl groups, vinyl groups, heterocyclic groups, alkoxysilyl groups, and combinations thereof.

[0100] Examples of heterocycles include triazole, pyrrole, furan, thiophene, imidazole, oxazole, thiazole, pyrazole, isoxazole, isothiazole, tetrazole, pyridine, pyridazine, pyrimidine, pyrazine, piperidine, piperazine, morpholine, 2H-pyran and 6H-pyran, triazine, imidazoline, oxazoline, thiazoline, pyrazoline, and isoxazoline. Examples of other organic groups include alkyl groups, cycloalkyl groups, alkoxy groups, alkyl ether groups, aryl groups, allyl groups, vinyl groups, and combinations thereof.

[0101] Examples of alkoxysilyl groups include trimethoxysilyl, triethoxysilyl, tributoxysilyl, dimethoxymethylsilyl, dimethoxyphenylsilyl, and methoxydimethylsilyl groups. Other organic groups include alkyl groups, cycloalkyl groups, alkoxy groups, alkyl ether groups, aryl groups, allyl groups, vinyl groups, and combinations thereof.

[0102] In chemical formula (3), Z １ If it is a sulfur atom, it has a strong interaction with the substrate and is preferable because it further improves the adhesion of the cured film. Also, from the viewpoint of suppressing residue during development, Y １ It is preferable that it is an amino group. From the viewpoint of suppressing film peeling during development, R ５ , R ６ At least one of them is preferably an alkyl group, cycloalkyl group, aryl group, allyl group, or vinyl group having 1 to 20 carbon atoms, and more preferably an alkyl group having 1 to 20 carbon atoms. Also, R ５ , R ６ At least one of these is preferably a monovalent organic group having 1 to 20 carbon atoms and containing a heterocycle, as this results in a stronger interaction with the substrate and improved adhesion of the cured film.

[0103] Examples of silane compounds having the structure represented by chemical formula (3) include the silane compounds listed below.

[0104]

[0105] (E1) The content of the silane compound is preferably 0.01 parts by mass or more, more preferably 0.02 parts by mass or more, and particularly preferably 0.05 parts by mass or more, per 100 parts by mass of the total siloxane resin (A). Furthermore, it is preferably 5 parts by mass or less, more preferably 3 parts by mass or less, particularly preferably 1.0 part by mass or less, and even more preferably 0.5 parts by mass or less. If the content of the silane compound (E1) is 0.01 parts by mass or more, the adhesion between the cured film and the substrate will be excellent. If it is 5 parts by mass or less, the effect of suppressing film peeling during development will be excellent.

[0106] The resin composition of the present invention may contain an (E2) silane compound. The inclusion of an (E2) silane compound is preferable because it can further improve chemical resistance. The (E2) silane compound is a compound having at least one selected from an alcoholic hydroxyl group, an epoxy group, an oxetanyl group, an acid anhydride group, or a carboxylic acid group.

[0107] (E2) Examples of silane compounds include those described above as compounds that give repeating units represented by chemical formula (4).

[0108] (E2) The content of the silane compound is preferably 0.1 parts by mass or more, more preferably 0.5 parts by mass or more, and particularly preferably 1.0 part by mass or more, per 100 parts by mass of the total siloxane resin (A). Furthermore, it is preferably 15 parts by mass or less, more preferably 10 parts by mass or less, particularly preferably 5 parts by mass or less, and even more preferably 3 parts by mass or less. If the content of the silane compound (E2) is 0.1 parts by mass or more, the chemical resistance of the cured film will be excellent. If it is 15 parts by mass or less, excessive dissolution by the developing solution can be suppressed.

[0109] Furthermore, the resin composition of the present invention may also contain silane coupling agents other than the (E1) silane compound and the (E2) silane compound. By including a silane coupling agent, adhesion to the substrate can be further improved. The silane coupling agent is preferably a compound containing at least one selected from the group consisting of an amino group, a mercapto group, and an imide group. Examples of silane coupling agents include 3-aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane, 3-triethoxysilyl-N-(1,3-dimethylbutylidene)propylamine, N-phenyl-3-aminopropyltrimethoxysilane, 3-mercaptopropyltrimethoxysilane, 3-mercaptopropylmethyldimethoxysilane, and N-(t-butyl)-3-(3-trimethoxysilylpropyl)succinimide.

[0110] (Particles) The resin composition of the present invention may contain (F) particles. The embodiment of the resin composition of the present invention containing (F) particles may be either an embodiment in which (F) particles are contained in the particle-containing siloxane resin described above, or an embodiment in which (F) particles are added to the resin composition. The resin composition of the present invention may preferably contain the particle-containing siloxane resin described above and further contain (F) particles, or it may preferably not contain the particle-containing siloxane resin described above and contain (F) particles.

[0111] (F) Examples of particles include compounds selected from the group consisting of titanium oxide, zirconium oxide, aluminum oxide, talc, mica, white carbon, magnesium oxide, zinc oxide, barium carbonate, silica, vanadium oxide, chromium oxide, iron oxide, cobalt oxide, copper oxide, zinc oxide, niobium oxide, tin oxide, cerium oxide, and composite compounds thereof. Two or more of these may be included.

[0112] From the viewpoint of light diffusion, it is preferable that the resin composition of the present invention contains (F) particles, and that the (F) particles contain one or more selected from the group consisting of titanium dioxide, zirconium oxide, aluminum oxide, talc, mica, white carbon, magnesium oxide, zinc oxide, barium carbonate, and composite compounds thereof. Among these, it is preferable to include titanium dioxide and / or zirconium oxide, which have high light diffusion properties and are easily used industrially, and it is most preferable that the (F) particles contain titanium dioxide.

[0113] From the viewpoint of light diffusion, the content of (F) particles is preferably 5.0 parts by mass or more, more preferably 10 parts by mass or more, even more preferably 20 parts by mass or more, and particularly preferably 30 parts by mass or more, per 100 parts by mass of the total solid content of the resin composition. Furthermore, from the viewpoint of suppressing residue after development, it is preferably 90 parts by mass or less, more preferably 70 parts by mass or less, even more preferably 60 parts by mass or less, and particularly preferably 50 parts by mass or less. The content ratio of (F) particles refers to the total of (F) particles in the particle-containing siloxane resin and (F) particles added to the resin composition.

[0114] Furthermore, from the viewpoint of light diffusion, the particle size of (F) particles is preferably 100 to 400 nm in median diameter, more preferably 200 to 400 nm, and even more preferably 250 to 350 nm. If the median diameter is 100 nm or more, good light diffusion of the cured film can be obtained, and if the median diameter is 400 nm or less, pattern processing of the thin film becomes easy. The median diameter refers to the average primary particle diameter calculated from the particle size distribution measured by laser diffraction.

[0115] (F) The particles may be surface-treated. Surface treatment with Al, Si, and / or Zr is preferred. Surface treatment with Al, Si, and / or Zr can improve the dispersibility of (F) particles in the photosensitive resin composition and further improve the light resistance and heat resistance of the cured film.

[0116] (F) Examples of titanium dioxide used as particles include R960; manufactured by DuPont (SiO ２ / Al ２ O ３Surface treatment, median diameter 0.21 μm), CR-97; manufactured by Ishihara Sangyo Co., Ltd. (Al ２ O ３ / ZrO ２ Surface treatment, median diameter 0.25 μm) JR-301; manufactured by Teika Co., Ltd. (Al ２ O ３ Surface treatment, median diameter 0.30 μm), JR-405; manufactured by Teika Co., Ltd. (Al ２ O ３ Surface treatment, median diameter 0.21 μm), JR-600A; Teika Co., Ltd. (Al ２ O ３ Surface treatment, median diameter 0.25 μm), JR-603; Teika Co., Ltd. (Al ２ O ３ / ZrO ２ Surface treatment (median diameter 0.28 μm), etc. are examples, and as for zirconia oxide, 3YI-R; manufactured by Toray Industries, Inc. (Al ２ O ３ Examples include surface treatment (median diameter 0.50 μm), and examples of aluminum oxide include AO-502; manufactured by Admatex Co., Ltd. (untreated, median diameter 0.25 μm). Two or more of these may be included.

[0117] (Solvent) The resin composition of the present invention may contain a solvent. By including a solvent, the viscosity can be easily adjusted to a level suitable for application, and the uniformity of the coated film can be improved. It is preferable to combine a solvent with a boiling point at atmospheric pressure of over 150°C and 250°C or less with a solvent with a boiling point of 150°C or less. By including a solvent with a boiling point at over 150°C and 250°C or less, the solvent volatilizes appropriately during application, allowing the coating film to dry, thereby suppressing uneven application and improving film thickness uniformity. Furthermore, by including a solvent with a boiling point at atmospheric pressure of 150°C or less, the residue of the solvent in the cured film can be suppressed, improving chemical resistance and adhesion. It is preferable that the solvent with a boiling point at atmospheric pressure of 150°C or less constitutes 50% by mass or more of the total solvent.

[0118] Examples of solvents with a boiling point of 150°C or less at atmospheric pressure include ethanol, isopropanol, 1-propanol, 1-butanol, 2-butanol, isopentanol, ethylene glycol monomethyl ether, ethylene glycol dimethyl ether, ethylene glycol monoethyl ether, methoxymethyl acetate, propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monomethyl ether acetate, propylene glycol monopropyl ether, ethylene glycol monomethyl ether acetate, 1-methoxypropyl-2-acetate, acetol, acetylacetone, methyl isobutyl ketone, methyl ethyl ketone, methyl propyl ketone, methyl lactate, toluene, cyclopentanone, cyclohexane, n-heptane, benzene, methyl acetate, ethyl acetate, propyl acetate, isobutyl acetate, butyl acetate, isopentyl acetate, pentyl acetate, 3-hydroxy-3-methyl-2-butanone, 4-hydroxy-3-methyl-2-butanone, and 5-hydroxy-2-pentanone. Two or more of these may be used.

[0119] Examples of solvents with a boiling point at atmospheric pressure between 150°C and 250°C include ethylene glycol diethyl ether, ethylene glycol mono-n-butyl ether, ethylene glycol mono-tert-butyl ether, propylene glycol mono-n-butyl ether, propylene glycol mono-t-butyl ether, 2-ethoxyethyl acetate, 3-methoxy-1-butanol, 3-methoxy-3-methylbutanol, 3-methoxy-3-methylbutyl acetate, 3-methoxybutyl acetate, ethyl 3-ethoxypropionate, propylene glycol monomethyl ether propionate, dipropylene glycol methyl ether, diisobutyl ketone, diacetone alcohol, ethyl lactate, butyl lactate, dimethylformamide, dimethylacetamide, γ-butyrolactone, γ-valerolactone, δ-valerolactone, propylene carbonate, N-methylpyrrolidone, cyclohexanone, cycloheptanone, diethylene glycol monobutyl ether, and ethylene glycol dibutyl ether. You may use two or more of these.

[0120] The solvent content can be arbitrarily set depending on the coating method and other factors. For example, when forming a film by spin coating, the solvent content is generally set to 50% by mass or more and 95% by mass or less in the resin composition.

[0121] (Surfactants) The resin composition of the present invention may contain surfactants. By including surfactants, the flowability during application can be improved. Examples of surfactants include fluorine-based surfactants such as “Megafac” (registered trademark) F142D, F172, F173, F183, F445, F470, F475, F477 (all trade names, manufactured by Dainippon Ink and Chemicals, Inc.), NBX-15, FTX-218 (all trade names, manufactured by Neos Co., Ltd.); silicone-based surfactants such as “Disperbyk” (registered trademark) 333, 301, 331, 345, 207 (all trade names, manufactured by Big Chemie Co., Ltd.); polyalkylene oxide-based surfactants; and poly(meth)acrylate-based surfactants. Two or more of these may be included.

[0122] (Other Additives) The resin composition of the present invention may further contain, as needed, a thermal coloring agent, an oxidative coloring agent, a dissolution accelerator, a dissolution inhibitor, an adhesion improver, a stabilizer, an antifoaming agent, an ink-repellent agent, a sensitizer, a chain transfer agent, a polymerization inhibitor, and the like. Known additives may be used for these purposes.

[0123] The solid content concentration of the resin composition of the present invention can be arbitrarily set depending on the coating method and other factors. For example, when film formation is performed by spin coating as described later, the solid content concentration is generally set to 5% by mass or more and 50% by mass or less.

[0124] (Method for producing the resin composition) Next, the method for producing the resin composition of the present invention will be described. The resin composition of the present invention can be obtained by mixing the aforementioned (A) siloxane resin, (B) thermal crosslinking agent, (C) thermal base generating agent and other components as needed.

[0125] More specifically, for example, one method involves adding (B) a thermal crosslinking agent, (C) a thermal base generator, and other components as needed to any solvent, stirring to dissolve them, then adding (A) a siloxane resin, stirring for a further 20 minutes to 3 hours, and filtering the resulting solution.

[0126] <Cured Film> Next, the cured film of the present invention will be described. The cured film of the present invention is a cured film obtained by curing the resin composition of the present invention described above. There are no particular restrictions on the thickness of the cured film, but 0.1 to 30 μm is preferred.

[0127] The cured film of the present invention can be obtained, for example, by applying the aforementioned resin composition of the present invention in a film-like manner and curing it. In the case of a resin composition containing (D) a photosensitive agent, it is preferable to apply the resin composition to a substrate, pre-bake it, then expose it to light and develop it to form a positive or negative pattern, and then heat-cur it. It is also preferable to expose it again before heat curing.

[0128] Examples of substrate materials include silicon, gallium arsenide, glass, metals (copper, aluminum, chromium, titanium, molybdenum, gold, indium, etc.), metal oxides (alumina, ITO, etc.), silicon oxide, silicon nitride, ceramics, and resins. These substrates may be made of a single material, or they may be made of multiple materials depending on the product form.

[0129] Examples of coating methods for applying a resin composition onto a substrate include microgravure coating, spin coating, dip coating, curtain flow coating, roll coating, spray coating, and slit coating.

[0130] Examples of pre-baking devices include heating devices such as hot plates and ovens. The pre-baking temperature is preferably 50 to 130°C, and the pre-baking time is preferably 30 seconds to 30 minutes. The film thickness after pre-baking is preferably 0.1 to 50 μm. If the film thickness is 0.1 μm or more, film peeling during development can be suppressed, and if it is 50 μm or less, the light rays during exposure can easily reach the depths of the film, resulting in higher resolution for pattern processing.

[0131] Exposure may be performed via a desired mask or without a mask. Examples of exposure machines include steppers, mirror projection mask aligners (MPAs), and parallel light mask aligners (PLAs). Exposure intensity ranges from 10 to 40,000 mJ / cm². ２ (Convertible to exposure amount at a wavelength of 365 nm) is preferred. Examples of exposure light sources include mercury lamps (i-line, g-line, h-line, etc.), KrF lasers (wavelength 248 nm), ArF lasers (wavelength 193 nm), etc.

[0132] Development methods include showering, dipping, and paddleping. The immersion time in the developer is preferably 5 seconds to 10 minutes. Examples of developer solutions include alkaline developers such as inorganic alkalis such as alkali metal hydroxides, carbonates, phosphates, silicates, and borates; amines such as 2-diethylaminoethanol, monoethanolamine, and diethanolamine; and aqueous solutions containing quaternary ammonium salts such as tetramethylammonium hydroxide and choline. After development, rinsing with water is preferable, followed by drying and baking at a temperature of 50 to 130°C.

[0133] For re-exposure, UV-Vis lithography machines such as steppers, mirror projection mask aligners (MPAs), and parallel light mask aligners (PLAs) are used, with a radiation dose of 100 to 20,000 mJ / cm². ２ It is preferable to expose the entire surface with an exposure intensity (calculated based on exposure at a wavelength of 365 nm).

[0134] Examples of heating devices used for thermosetting include hot plates and ovens. The thermosetting temperature is preferably 80 to 300°C, and the thermosetting time is preferably 10 minutes to 3 hours.

[0135] <Electronic Devices> Next, the electronic devices of the present invention will be described.

[0136] The electronic device of the present invention comprises the cured film of the present invention. Examples of electronic devices include display devices, semiconductor devices, optical communication devices, and lighting. The electronic device of the present invention preferably comprises a mini-LED or micro-LED as described later.

[0137] <Display Device> Next, the display device of the present invention will be described.

[0138] The display device of the present invention comprises the cured film of the present invention. Examples of display devices include liquid crystal displays, organic EL displays, quantum dot displays, mini-LED displays, or micro-LED displays. A mini-LED display, as used herein, refers to a display device having a light source made up of a large number of LED cells with a length and width of 100 μm to 10 mm. A micro-LED display refers to a display device having a light source made up of a large number of LED cells with a length and width of less than 100 μm. The display device of the present invention preferably comprises mini-LEDs or micro-LEDs.

[0139] The cured film of the present invention is suitably used as a pixel splitting layer, a TFT planarization layer, a TFT protective layer, an interlayer insulating layer, or a gate insulating layer in display devices such as liquid crystal displays, organic EL displays, quantum dot displays, mini-LED displays, or micro-LED displays.

[0140] Furthermore, the resin composition of the present invention is also preferably used to form a partition layer or a planarization layer in a micro-LED display or mini-LED display. A partition layer is a layer formed between a plurality of adjacent light-emitting elements in a display device, and has the function of separating the light-emitting elements from each other. In order to improve the light extraction efficiency of the display, the partition layer preferably has light-diffusing and light-reflecting properties. In addition, in order to obtain light-diffusing and light-reflecting properties, the partition layer preferably contains the (D) particles. A planarization layer is a layer that has the function of flattening the irregularities that occur in the manufacturing process of the display device, and is preferably formed to cover at least a part of the light-emitting elements.

[0141] Figure 1 shows an example of a schematic cross-sectional view of a microLED display having a partition layer and a planarization layer.

[0142] The display device 1 has wiring 4 and an interlayer insulating layer 3 on a drive substrate 8, and on top of that, a plurality of light-emitting elements 2 and a partition layer 11. As the drive substrate 8, a TFT substrate on which TFTs for driving the display are provided can be used. A planarization layer 21 is provided so as to cover the light-emitting elements 2. Here, "so as to cover the light-emitting elements 2" means that the planarization layer 21 covers at least the sides of the light-emitting elements 2, but the planarization layer 21 may also cover the upper side of the light-emitting elements 2. On top of the planarization layer 21, there is a wiring layer 7 which constitutes a touch panel, and on top of that, there is a counter substrate 5. In the display device 1, the light extraction side is the side of the counter substrate 5 as seen from the light-emitting elements 2.

[0143] In the embodiment shown in Figure 1, a partition layer 11 is provided between a plurality of adjacent light-emitting elements 2, and a planarization layer 21 is formed to cover the light-emitting elements 2. Below the planarization layer, an example configuration is shown in which an interlayer insulating layer 3 consisting of multiple layers is laminated, but the interlayer insulating layer 3 may be a single layer. Furthermore, it is preferable that the light-emitting elements 2 are LED chips. The light-emitting elements 2 are provided with a pair of electrode terminals 6 in the direction of the drive substrate 8, and each electrode terminal 6 is electrically connected to the wiring 4 located in the planarization layer 21 and the interlayer insulating layer 3. The plurality of wirings 4 are configured to maintain electrical insulation because, if they are covered by the planarization layer 21 or the interlayer insulating layer 3, these layers function as insulating films. The configuration in which the metal wiring maintains electrical insulation means that the parts of the metal wiring that require electrical insulation are covered by a cured film obtained by curing a composition containing resin.

[0144] Furthermore, as a method for manufacturing such a display device 1, it is preferable to form an interlayer insulating layer 3 and wiring 4 on a support substrate (not shown in Figure 1), and then form a light-emitting element 2, etc., on top of that. After that, it is preferable to peel off the support substrate, and then instead of the support substrate, a drive substrate is bonded to the interlayer insulating layer 3, and a counter substrate 5 is bonded to the wiring layer 7.

[0145] Furthermore, as another method for manufacturing the display device 1, it is preferable to manufacture it by forming a drive substrate 8 on a support substrate (not shown in Figure 1), and then forming an interlayer insulating layer 3, wiring 4, light-emitting element 2, etc., on top of the drive substrate 8. After that, it is preferable to bond the opposing substrate 5 onto the wiring layer 7. The support substrate may be peeled off from the drive substrate 8, or it may remain placed adjacent to the drive substrate 8 without being peeled off.

[0146] The light-emitting element 2 is preferably a PN junction diode in which a P-type semiconductor and an N-type semiconductor are joined. The light-emitting element 2 is preferably 1 to 700 μm in length on one side, and more preferably 2 to 100 μm in length on one side. The interlayer insulating layer 3, the partition layer 11, and the planarization layer 21 are preferably cured films of a patterned resin composition. It is also preferable that the thickness of the planarization layer 21 is greater than the thickness of the partition layer 11. Furthermore, it is preferable that the planarization layer 21 covers a portion of the surface of the partition layer 11 opposite to the surface facing the substrate 5, and more preferably covers the entire surface of the partition layer 11 opposite to the surface facing the substrate 5. From the viewpoint of improving reliability, the partition layer 11 and the planarization layer 21 are preferably cured films of the present invention. From the viewpoint of improving the luminescence brightness in the display device, the partition layer 11 is preferably containing the above-mentioned (F) particles.

[0147] <Information Terminal> Next, the information terminal of the present invention will be described. The information terminal of the present invention is equipped with the electronic device of the present invention. It is also preferable that it be equipped with the display device of the present invention. An information terminal is an electronic device whose main functions are input / output, storage, processing, and transmission of information, and if it has a display device, it outputs information such as pictures and characters to the display device. Examples of information terminals include mobile phones such as smartphones, tablet terminals, TVs, PCs, digital signage, game consoles, AR / VR terminals, watches, portable music players, calculators, etc.

[0148] The present invention will be described below with reference to examples, but the present invention is not limited to the following examples. First, the measurements, evaluations, and tests performed in the following examples and comparative examples will be described. Unless otherwise specified, the number of measurements n is 1.

[0149] (Item 1: Storage Stability Evaluation) The storage stability of the resin compositions obtained in each example was evaluated. Specifically, an E-type viscometer (manufactured by Toki Sangyo Co., Ltd.; RE-215L) was used to measure the viscosity V1 of the resin composition immediately after preparation and the viscosity V2 of the resin composition after storage at 23°C for 7 days after preparation. The viscosity change rate was calculated from V1 and V2 using the following formula: Viscosity change rate (%) = (V2 / V1 - 1) × 100 Based on this viscosity change rate, the storage stability was evaluated according to the following criteria: A: Viscosity change rate less than 3.0% B+: Viscosity change rate 3.0% or more and less than 4.0% B-: Viscosity change rate 4.0% or more and less than 5.0% C: Viscosity change rate 5.0% or more and less than 7.0% D: Viscosity change rate 7.0% or more and less than 10.0% E: Viscosity change rate 10.0% or more.

[0150] (Item 2: Evaluation of swelling resistance in chemical resistance tests) The swelling resistance in chemical resistance tests was evaluated for the laminates of the cured film and glass substrate obtained in each example. Specifically, a stylus-type film thickness gauge (product name SURFCOM 1500DX, manufactured by Tokyo Seimitsu Co., Ltd.) was used to measure the film thickness T1 of the cured film and the film thickness T2 after immersing the cured film in a resist stripping solution (a mixture of monoethanolamine and diethylene glycol monobutyl ether) at 50°C for 120 seconds and rinsing with pure water. From T1 and T2, the rate of change in film thickness was calculated using the following formula: Rate of change in film thickness (%) = (T2 / T1 - 1) × 100 Based on this rate of change in film thickness, the swelling resistance was evaluated according to the following criteria. A: Film thickness change rate is less than 2.0% B: Film thickness change rate is 2.0% or more and less than 4.0% C: Film thickness change rate is 4.0% or more and less than 6.0% D: Film thickness change rate is 6.0% or more and less than 10.0% E: Film thickness change rate is 10.0% or more.

[0151] (Item 3: Adhesion Evaluation) The adhesion between the hardened film and the alumina substrate obtained in each example was evaluated according to JIS "K5600-5-6 (Date of enactment = 1999 / 04 / 20)" using the following method. The alumina substrate was prepared by depositing alumina on a glass substrate using the sputtering method. On the surface of each hardened film on the alumina substrate, 11 parallel lines were drawn vertically and horizontally at 1 mm intervals using a utility knife to create 100 1 mm x 1 mm grids. Cellophane adhesive tape (width = 18 mm, adhesive strength = 3.7 N / 10 mm) was attached to the surface of the hardened film, rubbed with an eraser (JIS S6050 compliant product) to make it adhere, and the number of remaining grids was visually counted when the tape was instantly peeled off while holding one end of the tape perpendicular to the board. The following criteria were used to determine the adhesion from the peeled area of ​​the grids. A: Peeling area is 0% B: Peeling area is 1% or more but less than 5% C: Peeling area is 5% or more but less than 15% D: Peeling area is 15% or more but less than 35% E: Peeling area is 35% or more.

[0152] (Item 4: Sensitivity) The resolution pattern of the developed film on the glass substrate obtained in each example was observed. As an indicator of sensitivity, the optimal exposure amount was determined to form a space pattern corresponding to an aperture with a width of 20 μm in a 20 μm line-and-space pattern. The sensitivity was 500 mJ / cm². ２ The following is preferable: 400 mJ / cm ２ The following are preferable.

[0153] (Item 5: Transmittance) For the laminates of the cured film and glass substrate obtained in each example, the light transmittance of the resin film at a wavelength of 400 nm was measured using an ultraviolet-visible spectrophotometer (Hitachi High-Tech Science Co., Ltd., U-2910).

[0154] (Item 6: Haze) For the laminates of the cured film and glass substrate obtained in each example, the haze was measured using a haze meter (HSP-150vis, manufactured by Murakami Color Technology Laboratory Co., Ltd.) in accordance with JIS "K7136 (Date of enactment = 2000 / 02 / 20)".

[0155] (Item 7: Display Light Emission Evaluation) For the microLED displays obtained in each embodiment, voltage was applied via a driving circuit to cause them to emit light. At this time, the number of non-emitting LED chips was observed, and the ratio of non-emitting chips to the total number of LED chips was calculated and determined as follows: A. Non-emitting ratio is 0% B. Non-emitting ratio is greater than 0% but less than 1% C. Non-emitting ratio is 1% or more but less than 3% D. Non-emitting ratio is 3% or more but less than 10% E. Non-emitting ratio is 10% or more.

[0156] <Compounds> The following compounds are used as appropriate in the examples and comparative examples. The compounds and their abbreviations are as follows: MeTMS: Methyltrimethoxysilane PhTMS: Phenyltrimethoxysilane EpoTMS: 2-(3,4-Epoxycyclohexyl)ethyltrimethoxysilane SucTMS: (3-Trimethoxysilyl)propylsuccinic anhydride AcrTMS: 3-Acryloxypropyltrimethoxysilane StTMS: p-Styryltrimethoxysilane TEOS: Tetraethoxysilane PGMEA: Propylene glycol monomethyl ether acetate DAA: Diacetone alcohol AL(A): Aluminum tris(acetylacetonate) DBU: 1,8-Diazabicyclo[5,4,0]-7-Undecene.

[0157] Furthermore, the structures of the compounds used in each example and comparative example are shown below.

[0158]

[0159]

[0160]

[0161]

[0162] The weight-average molecular weight of the siloxane resin in the following synthesis examples was determined by the following method. Using a GPC analyzer (HLC-8220; manufactured by Tosoh Corporation), GPC analysis was performed in accordance with "JIS K7252-3 (established on March 20, 2008)" to measure the weight-average molecular weight in polystyrene equivalent. Tetrahydrofuran was used as the fluidized bed.

[0163] <Synthesis Examples> (Synthesis Example 1) In a 500 ml three-necked flask, 40.86 g (0.30 mol) of MeTMS, 99.15 g (0.50 mol) of PhTMS, 24.64 g (0.1 mol) of EpoTMS, 20.83 g (0.1 mol) of TEOS, and 171.27 g of PGMEA were charged under a stream of dry nitrogen. While stirring at room temperature, an aqueous phosphoric acid solution, prepared by dissolving 0.927 g of phosphoric acid (0.50 mass%) relative to the charged monomers in 55.80 g of water, was added over 30 minutes. After that, the three-necked flask was immersed in a 70°C oil bath and stirred for 90 minutes, and then the oil bath was heated to 115°C over 30 minutes. One hour after the start of heating, the internal temperature (solution temperature) of the three-necked flask reached 100°C. The mixture was then heated and stirred for two hours (internal temperature 100-110°C) to obtain a siloxane resin solution. During the reaction, a total of 127.10 g of by-products, methanol and water, were distilled off. PGMEA was added to the obtained siloxane resin solution to a solid content concentration of 40% by mass to obtain siloxane resin solution (P-1).

[0164] (Synthesis Example 2) In a 500 ml three-necked flask, 65.38 g (0.48 mol) of MeTMS, 99.15 g (0.50 mol) of PhTMS, 5.25 g (0.02 mol) of SucTMS, and 151.70 g of PGMEA were charged under a stream of dry nitrogen. While stirring at room temperature, an aqueous phosphoric acid solution, prepared by dissolving 0.849 g of phosphoric acid (0.50% by mass relative to the charged monomers) in 54.36 g of water, was added over 30 minutes. The procedure thereafter was the same as in Synthesis Example 1 to obtain a siloxane resin solution (P-2) with a solid content of 40% by mass.

[0165] (Synthesis Example 3) In a 500 ml three-necked flask, 54.48 g (0.40 mol) of MeTMS, 99.15 g (0.50 mol) of PhTMS, 23.43 g (0.10 mol) of AcrTMS, and 162.09 g of PGMEA were charged under a stream of dry nitrogen. While stirring at room temperature, an aqueous phosphoric acid solution, prepared by dissolving 0.885 g of phosphoric acid (0.50 mass%) relative to the charged monomers in 54.00 g of water, was added over 30 minutes. The procedure thereafter was the same as in Synthesis Example 1 to obtain a siloxane resin solution (P-3) with a solid content of 40 mass%.

[0166] (Synthesis Example 4) In a 500 ml three-necked flask, under a stream of dry nitrogen, 40.86 g (0.30 mol) of MeTMS, 112.15 g (0.50 mol) of StTMS, 24.64 g (0.1 mol) of EpoTMS, 20.83 g (0.1 mol) of TEOS, and 190.77 g of PGMEA were charged. While stirring at room temperature, an aqueous phosphoric acid solution, prepared by dissolving 0.992 g of phosphoric acid (0.50 mass%) relative to the charged monomers in 55.80 g of water, was added over 30 minutes.

[0167] Subsequently, a siloxane resin solution (P-4) with a solid content concentration of 40% by mass was obtained by following the same procedure as in Synthesis Example 1.

[0168] Table 1 shows the resin solutions obtained in each of the synthesis examples 1 to 4.

[0169]

[0170] <Preparation of Resin Compositions> Compositions 1 to 63 were prepared using the compositions listed in Tables 2-1, 2-2, 2-3, and 2-4. In Tables 2-1, 2-2, 2-3, and 2-4, the numbers in parentheses indicate the parts by mass of each component. However, the numbers in parentheses for the resin item indicate the parts by mass of only the resin component contained in each resin solution. When a composition contains particles, a compounding solution without the particle dispersion was first prepared, and then the particle dispersion and the compounding solution were mixed to prepare the composition. The particle dispersion was titanium dioxide (R-960; manufactured by DuPont (SiO2)). ２ / Al ２ O ３ Surface treatment, median diameter 210 nm) or zirconia oxide (3YI-R; manufactured by Toray Industries, Inc. (Al ２ O ３ 50.00 g of surface-treated material (median diameter 0.50 μm) was mixed with 50.00 g of the siloxane resin solution used for each composition, and the mixture was dispersed using a mill-type disperser filled with zirconia beads to obtain a particle dispersion. The resulting compositional solution was filtered through a 0.45 μmφ filter before use. However, if the composition contained particles, it was filtered through a 5.0 μmφ filter before use.

[0171] <Examples> (Example 1) The storage stability of composition 1, which is a resin composition, was evaluated by the method described in item 1 above.

[0172] Furthermore, Composition 1, which is a resin composition, was spin-coated onto a substrate using a spin coater (product name 1H-360S, manufactured by Mikasa Corporation), and pre-baked at 100°C for 2 minutes using a hot plate (product name SCW-636, manufactured by Dainippon Screen Mfg. Co., Ltd.) to produce a film with a thickness of 5.0 μm. The substrate used was appropriately selected from glass substrates and alumina substrates according to each evaluation.

[0173] The fabricated film was cured in an oven (IHPS-222; manufactured by ESPEC Corporation) at 170°C in air for 30 minutes to produce a cured film. The cured film on the substrate was evaluated for swelling resistance in chemical resistance tests using the method described in item 2 above, adhesion using the method described in item 3 above, transmittance using the method described in item 5 above, and haze using the method described in item 6 above. The evaluations for items 2, 3, 5 and 6 were each performed using laminates of different cured films and substrates.

[0174] (Examples 2-5 and Comparative Example 1) In Examples 2-5 and Comparative Example 1, evaluations were performed in the same manner as in Example 1, except that the resin composition used was changed from Composition 1 to one of Compositions 2-5 or Composition 52, as shown in Tables 2-1 and 2-4.

[0175] (Example 6) The storage stability of composition 6, which is a resin composition, was evaluated by the method described in item 1 above.

[0176] Furthermore, composition 6, which is a resin composition, was spin-coated onto a substrate using a spin coater (product name 1H-360S, manufactured by Mikasa Corporation), and pre-baked at 100°C for 2 minutes using a hot plate (product name SCW-636, manufactured by Dainippon Screen Mfg. Co., Ltd.) to produce a film with a thickness of 5.0 μm. The substrate used was appropriately selected from glass substrates and alumina substrates according to each evaluation.

[0177] The fabricated films were exposed to light using a parallel light mask aligner (product name PLA-501F, manufactured by Canon Inc.) with a high-pressure mercury lamp as the light source, via a grayscale mask having line and space patterns of widths of 50 μm, 40 μm, 30 μm, 20 μm, 15 μm, 10 μm, 7 μm, 5 μm, and 4 μm. Subsequently, the films were shower-developed for 120 seconds with a 2.38% by mass aqueous solution of tetramethylammonium hydroxide (hereinafter abbreviated as "TMAH") (product name "ELM-D," manufactured by Mitsubishi Gas Chemical Company, Inc.) using an automatic developing device (product name "AD-2000," manufactured by Takizawa Sangyo Co., Ltd.), followed by rinsing with water for 30 seconds.

[0178] Subsequently, for bleaching exposure, a parallel light mask aligner (product name PLA-501F, manufactured by Canon Inc.) was used with an exposure dose of 1000 mJ / cm². ２ The samples were exposed to light (i-line equivalent) and cured in an oven (IHPS-222; manufactured by ESPEC Corporation) at 170°C in air for 30 minutes to produce a cured film. The cured film on the obtained substrate was evaluated for swelling resistance in the chemical resistance test using the method described in item 2 above, adhesion using the method described in item 3 above, sensitivity using the method described in item 4 above, transmittance using the method described in item 5 above, and haze using the method described in item 6 above. Note that the evaluations for items 2, 3, 4, 5 and 6 were each performed using laminates of different cured films and substrates.

[0179] (Examples 7-51 and Comparative Examples 2-12) In Examples 7-51 and Comparative Examples 2-12, evaluations were performed in the same manner as in Example 6, except that the resin composition used was changed from composition 6 to one of compositions 7-51 and 53-63, as shown in Tables 2-1, 2-2, 2-3, and 2-4.

[0180] The evaluation results for Examples 1 to 51 and Comparative Examples 1 to 12 are shown in Tables 3-1, 3-2, and 3-3.

[0181]

[0182]

[0183]

[0184]

[0185]

[0186]

[0187]

[0188] (Example 101) An alkali-free glass substrate with a temporary adhesive material formed on it was used as a support substrate, and an interlayer insulating layer and metal wiring were formed on the support substrate. The interlayer insulating layer was formed by coating and pre-baking a photosensitive resin composition containing polyimide, patterning exposure through a photomask having a predetermined pattern, developing and rinsing, and then heating and thermocuring to form an interlayer insulating layer with a thickness of approximately 10 μm. Next, a titanium barrier metal was deposited on the interlayer insulating layer by sputtering, and then a copper seed layer was deposited on the barrier metal by sputtering. Next, a photoresist layer was deposited, and copper wiring was formed by a plating method. After that, the photoresist layer, seed layer, and barrier metal were removed in areas where metal wiring was not to be formed. The thickness of the formed wiring was 5 μm. Subsequently, the formation of the interlayer insulating layer and the formation of the wiring were repeated twice to form three interlayer insulating layers. On the surface of the interlayer insulating layer, SiO was formed in a form where the wiring was open. ２ A protective film consisting of the above was formed. The total thickness of the three interlayer insulating layers was 30 μm.

[0189] Next, an LED, which is a light-emitting element, was placed on the interlayer insulating layer in a manner that it was electrically connected to metal wiring. The LED had a thickness of 5 μm, with one side length of 10 μm and the other side length of 20 μm. Then, in order to form a partition layer, composition 31 was applied and pre-baked onto the interlayer insulating layer and the LED, and patterning exposure, development, and rinsing were performed through a photomask having a predetermined pattern to form a matrix-like pattern having multiple openings that exposed the LED and its surroundings. The shape of the openings was rectangular, with one side length of 15 μm and the other side length of 25 μm. In the matrix-like pattern, the pattern dimension between the openings with a side length of 15 μm was 5 μm, and the pattern dimension between the openings with a side length of 25 μm was also 5 μm. After that, a partition layer with a film thickness of approximately 4 μm was formed by heating and heat curing. The thermosetting conditions involved heating to 200°C at a rate of 3.5°C / min under a nitrogen atmosphere with an oxygen concentration of 20 ppm by mass or less, followed by a heat treatment at 200°C for 60 minutes, and then cooling to 50°C.

[0190] Next, in order to form a planarization layer, composition 6 was applied and pre-baked onto the interlayer insulating layer and the LED and partition layers. Then, patterning exposure, development, and rinsing were performed through a photomask having a predetermined pattern to form an uncured film having multiple opening patterns for connecting the touch panel wiring and the drive substrate. The shape of the opening patterns was circular, and the diameter of the bottom of the smallest pattern was 2 μm. Subsequently, the uncured film was heated and thermally cured to form a planarization layer with a thickness of approximately 4 μm. The thermal curing conditions were as follows: under a nitrogen atmosphere with an oxygen concentration of 20 ppm by mass or less, the temperature was raised to 200°C at a heating rate of 3.5°C / min, the heat treatment was performed at 200°C for 60 minutes, and then cooled to 50°C.

[0191] Next, a wiring layer was formed on the planarized layer by sputtering. A patterned photoresist layer was deposited on the wiring layer, and the wiring layer was etched with an acidic solution to form the wiring layer pattern. After that, the remaining photoresist layer was removed with an alkaline resist stripping solution.

[0192] Finally, a micro-LED display equipped with multiple light-emitting elements (LEDs) was fabricated by peeling off the support substrate from the laminate created as described above, attaching the drive substrate, and then bonding the opposing substrate onto the wiring layer. The obtained micro-LED display was then subjected to light emission evaluation and reliability evaluation.

[0193] (Examples 102-112 and Comparative Examples 101-103) In Examples 102-112 and Comparative Examples 101-103, evaluations were carried out in the same manner as in Example 101, except that the resin compositions used for the partition layer and the planarization layer were changed to other compositions, as shown in Table 4. The evaluation results for Examples 101-110 and Comparative Examples 101-103 are shown in Table 4.

[0194]

[0195] Comparative Examples 1-2 and 10 lack (B) thermal crosslinking agents and (C) thermal base generators, and therefore exhibit inferior properties. Comparative Examples 4 and 12 contain (C) thermal base generators but lack (B) thermal crosslinking agents, and therefore exhibit inferior properties. Comparative Examples 6-7 contain (C) thermal base generators but contain a different compound as a thermal crosslinking agent than (B) thermal crosslinking agents, and therefore exhibit inferior properties. Comparative Examples 3, 8-9, and 11 contain (B) thermal crosslinking agents but lack (C) thermal base generators, and therefore exhibit inferior properties. Comparative Example 5 does not contain (C) thermal base generators and contains a different compound as a thermal crosslinking agent than (B) thermal crosslinking agents, and therefore exhibits inferior properties. Comparative Examples 101-103 use resin compositions that do not contain (B) thermal crosslinking agents and (C) thermal base generators in the partition layer and planarization layer. Therefore, Comparative Examples 101-103 exhibit inferior properties.

[0196] The resin composition and cured film according to the present invention can be used in electronic devices, information terminals, and the like.

[0197] 1 Display device 2 Light-emitting element 3 Interlayer insulating layer 4 Wiring 5 Opposing substrate 6 Electrode terminals 7 Wiring layer 8 Drive substrate 11 Partition layer 21 Planarization layer

Claims

1. A resin composition comprising (A) a siloxane resin, (B) a thermal crosslinking agent, and (C) a thermal base generating agent, wherein (B) the thermal crosslinking agent is a compound having four or more methylol groups or methoxymethyl groups in its molecule.

2. The resin composition according to claim 1, wherein the content of (C) the thermal base generating agent is 0.10 parts by mass or more and 10 parts by mass or less per 100 parts by mass of (A) the siloxane resin.

3. The resin composition according to claim 1, wherein the (C) thermobase generating agent is a compound comprising a structure represented by chemical formula (1) or chemical formula (2). In chemical formula (1), R １ , R ２ , R ３ Each of these is independently a hydrogen atom or a hydrocarbon group having 1 to 20 carbon atoms. In chemical formula (2), R ４ Each of these is independently a hydrogen atom, a halogen atom, a hydrocarbon group having 1 to 20 carbon atoms, or a halogenated hydrocarbon group having 1 to 20 carbon atoms.

4. In the above chemical formula (1), R １ The resin composition according to claim 3, wherein is a hydrocarbon group having 1 to 20 carbon atoms.

5. The resin composition according to claim 4, wherein the (B) thermal crosslinking agent is a compound having four or more methoxymethyl groups in its molecule, and the content of the (C) thermal base generating agent is 10 parts by mass or less per 100 parts by mass of the (A) siloxane resin.

6. The resin composition according to claim 1, wherein the content of (B) the thermal crosslinking agent is 1.0 part by mass or more and 25 parts by mass or less per 100 parts by mass of (A) the siloxane resin.

7. The resin composition according to claim 1, wherein the (B) thermal crosslinking agent is a compound having a phenolic hydroxyl group.

8. The resin composition according to claim 1, further comprising (D) a photosensitive agent.

9. The resin composition according to any one of claims 1 to 8, further containing (E1) a silane compound, wherein the (E1) silane compound has a structure represented by Chemical Formula (3). In Chemical Formula (3), Z １ represents an oxygen atom or a sulfur atom, and Y １ represents a sulfur atom or an amino group. R ５ , R ６ are each independently a monovalent organic group having 1 to 20 carbon atoms. The monovalent organic group having 1 to 20 carbon atoms is an alkyl group, a cycloalkyl group, an alkoxy group, an aryl group, an allyl group, a vinyl group, a heterocyclic ring, an alkoxysilyl group, or a combination thereof. At least one of R ５ , R ６ is a monovalent organic group having 1 to 20 carbon atoms and having an alkoxysilyl group.

10. The resin composition according to any one of claims 1 to 8, further comprising an (E2) silane compound, wherein the (E2) silane compound is a compound having at least one selected from an alcoholic hydroxyl group, an epoxy group, an oxetanyl group, an acid anhydride group, or a carboxylic acid group.

11. The resin composition according to any one of claims 1 to 8, wherein the (A) siloxane resin is a resin containing repeating units represented by chemical formula (4). In chemical formula (4), R ７ This refers to a hydrocarbon group having 1 to 20 carbon atoms, having an alcoholic hydroxyl group, an epoxy group, an oxetanyl group, an acid anhydride group, a styryl group, or a carboxylic acid group.

12. The resin composition according to claim 8, wherein the (D) photosensitive agent contains a (D1) quinone diazide compound.

13. The resin composition according to any one of claims 1 to 8, further comprising (F) particles, wherein the (F) particles comprise one or more selected from titanium dioxide, zirconium oxide, aluminum oxide, talc, mica, white carbon, magnesium oxide, zinc oxide, barium carbonate, and composite compounds thereof.

14. The resin composition according to claim 13, wherein the (F) particles contain titanium dioxide.

15. A cured film obtained by curing the resin composition according to any one of claims 1 to 8.

16. An electronic device comprising the cured film described in claim 15.

17. The electronic device according to claim 16, comprising a mini-LED or a micro-LED.

18. An information terminal comprising the electronic device described in claim 16.

Images