Furanic ultra-high temperature adhesives

Abstract

The present disclosure relates generally to materials including cyclic compounds that are adhesive below the temperature at which pyrolysis occurs, and which are also adhesive at higher temperatures including the temperatures used in the regime for growing SiC crystals, which may be above 2000° C, or for SiC or GaN epitaxy, which may be above 1500° C.

Description

FURANIC ULTRA-HIGH TEMPERATURE ADHESIVESTECHNICAL FIELD

[0001] The present disclosure relates generally to materials including cyclic compounds that are adhesive below the temperature at which pyrolysis occurs, and which are also adhesive at higher temperatures including the temperatures used in the regime for growing SiC crystals, which may be above 2000° C, or for SiC or GaN epitaxy, which may be above 1500° C.BACKGROUND

[0002] Semiconductor devices, including power semiconductor devices based on wide bandgap materials, may be formed on a semiconductor wafer as part of a semiconductor fabrication process. Single crystal silicon carbide (SiC) has proven to be a very useful wafer material in the manufacture of such semiconductor devices. Due to its physical strength and excellent resistance to many chemicals, silicon carbide may be used to fabricate very robust substrates adapted for use in the semiconductor industry. Silicon carbide has excellent electrical properties, including radiation hardness, high breakdown field, a relatively wide band gap, high saturated electron drift velocity, high-temperature operation, and absorption and emission of high-energy photons in the blue, violet, and ultraviolet regions of the optical spectrum.

[0003] In the temperature regime for growing SiC crystals, which may be above 2000° C, or for SiC or GaN epitaxy, which may be above 1500° C, ceramics, composite materials, or bonded substrates must maintain structural stability under chemically harsh conditions. Binders and adhesives are typically used in such processes. However, at temperatures above 300° C, the bonding strength of most organic adhesives typically begins to fail because there is enough thermal energy to cleave organic molecular bonds. This is the onset of pyrolysis. As covalent bonds in the polymer are broken, the volume of the organic compound contracts because mass is lost through the release of small gaseous species (e.g., carbon dioxide, carbon monoxide, water, etc.) and volatile organic compounds (VOCs). The bond cleavage preceding the release of VOCs, and small gaseous species that occurs destroys the structural integrity of the adhesive well below the growth temperature of SiC crystals, SiC epitaxy, or GaN epitaxy. For most organic adhesives, pyrolysis yields a loosely boundcarbonaceous material known as char. This loss of structural continuity during pyrolysis makes the parent compound an ineffective bonding material in such applications.SUMMARY

[0004] There currently exist certain challenges in using organic adhesive and binder compounds in connection with the growth of SiC crystals, SiC epitaxy, or GaN epitaxy. Such organic adhesives and binders capable of providing adequate bonding strength at the temperatures required for growing SiC crystals, SiC epitaxy, or GaN epitaxy may be referred to as ultra-high temperature adhesives (UHTA). One such UHTA currently in use in crystal growth is used to bond SiC seeds to the graphite seed holder in a crucible. This UHTA is a phenolic novolac resin dissolved in furfuryl alcohol.

[0005] Certain aspects of the disclosure and their embodiments may provide solutions to these or other challenges.

[0006] Adhesives derived from organic molecules or from organic-inorganic hybrid molecules can be designed to be effective UHTAs. Such organic molecules may be effective because at temperatures between ambient temperature and the onset of pyrolysis (e.g., 300° C), these molecules form a strong bond and provide adequate adhesion, and at higher temperatures these molecules pyrolyze into thermally stable carbonaceous materials.

[0007] For an organic material to be an effective adhesive or binder above about 1500° C, the carbonaceous product of pyrolysis must maintain structural continuity. There must be minimal carbon loss due to pyrolysis. Furthermore, it must be covalently bonded to a substrate. For example, the organic material must form a densely bonded carbon network. However, such organic materials must also be a functional adhesive prior to undergoing pyrolysis. The material must form a bonded layer to the surface of a substrate, with or without curing, prior to the onset of pyrolysis.

[0008] Certain aspects of the disclosure and their embodiments describe a material which includes a cyclic compound, wherein the material is cured below 300° C; wherein the material is pyrolyzed above 400° C; and wherein the material is adhesive above 1500° C.

[0009] Certain aspects of the disclosure and their embodiments describe a crystal growth system for growing crystalline material which includes a first component; a second component; wherein the first component is affixed to the second component using a material comprising a cyclic compound, wherein the material is cured below 300° C; wherein the material is pyrolyzed above 400° C; and wherein the material is adhesive above 1500° C.

[0010] Certain aspects of the disclosure and their embodiments describe a method of adhering a first component and a second component which includes applying a material comprising a cyclical compound to at least one of the first or second component; curing the material below 300° C; pyrolyzing the material above 400° C; wherein the material is adhesive above 1500° C.

[0011] Certain aspects of the disclosure and their embodiments describe a ceramic slurry paint which includes an organic solvent; a cyclic compound; and ceramic microparticles.

[0012] Certain aspects of the disclosure and their embodiments describe a method of creating a coating on a surface which includes applying a paint to the surface, wherein the includes an organic solvent; a cyclic compound; and ceramic microparticles; drying the paint on the surface below 100° C; curing the paint on the surface below 300° C; and sintering the paint on the surface above 1500° C.

[0013] Certain aspects of the disclosure and their embodiments describe an article created by slip casting which includes a slip comprising a cyclic compound and ceramic microparticles; wherein the slip is placed into a mold, the slip is cured in the mold, and the slip is sintered.

[0014] Certain aspects of the disclosure and their embodiments describe a method of creating an article by slip casting which includes placing a slip into a mold; curing the slip in the mold; sintering the slip; wherein the slip is comprised of a cyclic compound and ceramic microparticles.

[0015] Certain aspects of the disclosure and their embodiments describe an article including graphite particles and a binder including a cyclic compound; wherein the article is cured and sintered.

[0016] Certain aspects of the disclosure and their embodiments describe a method of creating an article by casting which includes placing into a mold a mixture including graphite and a cyclic compound; curing the mixture in the mold; sintering the mixture.

[0017] Certain aspects of the disclosure and their embodiments describe a method of creating an article by casting which includes creating a mixture comprising graphite, a cyclic compound, and an organic solvent; filling a foam matrix with the mixture; curing the mixture in foam matrix; sintering the mixture in the foam matrix.

[0018] These and other features, aspects and advantages of various embodiments will become better understood with reference to the following description and appended claims. The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments of the present disclosure and, together with the description, serve to explain the related principles.BRIEF DESCRIPTION OF THE DRAWINGS

[0019] The accompanying drawings, which are included to provide a further understanding of the disclosure and are incorporated in and constitute a part of this application, illustrate certain nonlimiting embodiments of inventive concepts. In the drawings:

[0020] FIG. 1 depicts a line formula of furfuryl alcohol, a functionalized furan;

[0021] FIG. 2 depicts an exemplary furanic polymer according to example embodiments of the present disclosure;

[0022] FIG. 3 depicts an exemplary furanic polymer according to example embodiments of the present disclosure;

[0023] FIG. 4 depicts a branched copolymer according to example embodiments of the present disclosure;

[0024] FIG. 5 depicts a branched copolymer according to example embodiments of the present disclosure;

[0025] FIG. 6 depicts a branched copolymer according to example embodiments of the present disclosure;

[0026] FIG. 7 depicts a branched copolymer according to example embodiments of the present disclosure;

[0027] FIG. 8 depicts a copolymer according to example embodiments of the present disclosure

[0028] FIG. 9 depicts a copolymer according to example embodiments of the present disclosure

[0029] FIG. 10 depicts a block polymer according to example embodiments of the present disclosure;

[0030] FIG. 11 depicts a block polymer according to example embodiments of the present disclosure;

[0031] FIG. 12 depicts a star polymer according to example embodiments of the present disclosure;

[0032] FIG. 13a depicts a furanic molecule according to example embodiments of the present disclosure;

[0033] FIG. 13b depicts a furanic molecule according to example embodiments of the present disclosure;

[0034] FIG. 13c depicts a furanic molecule according to example embodiments of the present disclosure;

[0035] FIG. 13d depicts a furanic molecule according to example embodiments of the present disclosure;

[0036] FIG. 14a depicts a macrocycle incorporating furanic functional groups according to example embodiments of the present disclosure;

[0037] FIG. 14b depicts a macrocycle incorporating furanic functional groups or moi eties according to example embodiments of the present disclosure;

[0038] FIG. 14c depicts a macrocycle incorporating furanic functional groups or moi eties according to example embodiments of the present disclosure;

[0039] FIG. 15 depicts a second-generation dendrimer incorporating furanic functional groups or moieties according to example embodiments of the present disclosure;

[0040] FIG. 16a depicts a heteroatom organic molecule including a furanic moiety according to example embodiments of the present disclosure;

[0041] FIG. 16b depicts a heteroatom organic molecule including a furanic moiety according to example embodiments of the present disclosure;

[0042] FIG. 16c depicts a heteroatom organic molecule including a furanic moiety according to example embodiments of the present disclosure;

[0043] FIG. 16d depicts a heteroatom organic molecule including a furanic moiety according to example embodiments of the present disclosure;

[0044] FIG. 16e depicts a heteroatom organic molecule including a furanic moiety according to example embodiments of the present disclosure;

[0045] FIG. 17 depicts an organometallic molecule including a furanic moiety according to example embodiments of the present disclosure;

[0046] FIG. 18 depicts an organometallic molecule including a furanic moiety according to example embodiments of the present disclosure;

[0047] FIG. 19 depicts an organometallic molecule including a furanic moiety according to example embodiments of the present disclosure;

[0048] FIG. 20a depicts a 2D covalent organic framework according to example embodiments of the present disclosure;3

[0049] FIG. 20b depicts a 2D covalent organic framework according to example embodiments of the present disclosure;

[0050] FIG. 21a depicts a 3D covalent organic framework according to example embodiments of the present disclosure;

[0051] FIG. 21b depicts a 3D covalent organic framework according to example embodiments of the present disclosure;

[0052] FIG. 22 depicts a metal organic framework according to example embodiments of the present disclosure;

[0053] FIG. 23 depicts a crystal growth system having a treated graphite structure according to example embodiments of the present disclosure;

[0054] FIG. 24 depicts a crystal growth system having a treated graphite structure according to example embodiments of the present disclosure;

[0055] FIG. 25 depicts a crystal growth system having a treated graphite structure according to example embodiments of the present disclosure;

[0056] FIG. 26a depicts a perspective view of a source retention mechanism according to example embodiments of the present disclosure;

[0057] FIG. 26b depicts a perspective view of a source retention mechanism according to example embodiments of the present disclosure;

[0058] FIG. 27 is a flowchart illustrating a method for applying a material comprising a cylindrical compound to at least one of a first or second component according to example embodiments of the present disclosure;

[0059] FIG. 28 is a flowchart illustrating a method for applying a coating to a surface, according to example embodiments of the present disclosure;

[0060] FIG. 29 is a flowchart illustrating a method for creating an article according to example embodiments of the present disclosure;

[0061] FIG. 30 is a flowchart illustrating a method for creating an article according to example embodiments of the present disclosure;

[0062] FIG. 31 is a flowchart illustrating a method for creating an article according to example embodiments of the present disclosure;

[0063] FIG. 32 depicts a crystal growth system having a treated graphite structure according to example embodiments of the present disclosure.

[0064] FIG. 33A depicts a crystal growth system, including a baffle, according to example embodiments of the present disclosure.

[0065] FIG. 33B depicts an embodiment of a baffle use in a crystal growth system according to example embodiments of the present disclosure.

[0066] FIG. 33C depicts an embodiment of a baffle use in a crystal growth system according to example embodiments of the present disclosure.

[0067] FIG. 34 depicts a crystal growth system according to example embodiments of the present disclosure.

[0068] FIG. 35 depicts a crystal growth system according to example embodiments of the present disclosure.

[0069] FIG. 36 depicts a crystal growth system according to example embodiments of the present disclosure.

[0070] FIG. 37 depicts a crystal growth system according to example embodiments of the present disclosure.

[0071] FIG. 38 depicts a crystal growth system according to example embodiments of the present disclosure.

[0072] FIG. 39 depicts a crystal growth system according to example embodiments of the present disclosure.DETAILED DESCRIPTION

[0073] Reference now will be made in detail to embodiments, one or more examples of which are illustrated in the drawings. Each example is provided by way of explanation of the embodiments, not limitation of the present disclosure. In fact, it will be apparent to those skilled in the art that various modifications and variations may be made to the embodiments without departing from the scope or spirit of the present disclosure. For instance, features illustrated or described as part of one embodiment may be used with another embodiment to yield a still further embodiment. Thus, it is intended that aspects of the present disclosure cover such modifications and variations.

[0074] Certain furan functionalized compound can be used as ultra-high temperature adhesives. The chemistry of furan rings allows a broad range of furan-containing polymeric, molecular, or inorganic-organic hybrid materials that can function as UHTAs. Examples of such materials incorporating the furan heterocycle as a structural unit include: furanic polymers and resins; furanicmolecules and macromolecules; furanic rigid network solids; and furan functionalized micromaterials or nanomaterials.

[0075] With the proper material design, the furanic constituents would allow these compounds to participate in crosslinking (curing) through Diels-Alder cycloaddition and the formation of a bonded glassy carbon (BGC) network. Crosslinking, which forms a three-dimensional polymeric network, can be initiated through the application of chemical, photochemical, thermal, mechanical, or electrical energy. Once cured, these materials become structurally robust solids that bind strongly to a substrate. As these cured solids are pyrolized, the furan constituents undergo ring opening and forming reactive alkene fragments ( .CH2=CH2- ) and radicals which drive the formation of and condensation of polyaromatic cores resulting in a BGC network, which results in an UHTA.

[0076] The adhesion of furanic UHTAs may be further improved through the incorporation of a filler material. Use of such filler materials with UHTAs as a binding agent may be referred to as a “brick and mortar” model. Such filler materials may improve the adhesive properties of the UHTA by mechanical reinforcement. During pyrolysis of the furanic UHTA, the filler or any products generated by the chemical change of the filler may be incorporated into the network as a structural unit and mechanically strengthen the resulting bonded glassy carbon network through covalent bonding and / or strong non-covalent interactions. Such filler materials may also improve the adhesive properties of the UHTA by promoting carbon condensation. During pyrolysis of the furanic UHTA, the filler or any products generated by the chemical change of the filler may aid in the condensation of intermediate poly aromatic cores through covalent bonding and / or strong non-covalent interactions. By contributing to the condensation, a denser bonded glassy carbon network may be produced.

[0077] In some embodiments, filler materials used with furanic UHTAs may be active or may be passive. Active fillers undergo a chemical change (e.g., thermal decomposition, reduction, oxidation, solid state synthesis, etc.) into one or more products during the pyrolysis of the UHTA. Active fillers may also change aggregate state or are subject to diffusion before or during undergoing a chemical change. Passive fillers can form covalent bonds or participate in strong non-covalent interactions with the bonded glassy carbon network, but do not undergo further chemical reactions during the pyrolysis of the UHTA. Passive fillers can be impermeable or can be porous, allowing the furanic UHTA to penetrate into the material. In the case of a porous filler, the bonded glassy carbon network may form inside and outside the filler material during the pyrolysis of the UHTA. Passive fillers may participate in sintering, recrystallization, surface or bulk diffusion processes during temperature exposure. Eitheractive or passive fillers may also create voids or porosity during temperature treatments. For example, fillers may decompose or evaporate to create voids in the UHTA.

[0078] Applications for furanic UHTAs may include, but are not limited to, adhesives for bonding substrates, such as a silicon carbide (SiC) seed to a graphite seed holder, or a crystal wafer to another wafer, or for use as a packaging stack adhesive. As another example, furanic UHTAs may be used as a binder for particles (e.g., metal, ceramic, inorganic, organic, etc.) in composite forms, such as solid state sources for crystal growth or as abrasive grind wheels. As another example, furanic UHTAs may be used as a binder in a paint that converts to a coating, such as solution processable ceramic coatings (e.g., TaC, NbC, SiC, etc.) or a non-ceramic coating (e.g., glassy carbon coatings). As another example, furanic UHTAs may be used as a binder in the slip for casting ceramic forms, such as TaC ceramic parts for crystal growth, SiC ceramics for crystal growth source material forms, ceramics for wafer carriers, or as a porous ceramic matrix. As another example, furanic UHTAs may be used as a binder in a medium for 3D printing. As another example, furanic UHTAs may be used in a graphite-carbon slurry for casting graphite-carbon composite forms, such as hard carbon forms or porous carbon forms. As another example, furanic UHTAs may be used as a graphite cements, such as to bind materials into a form (e.g., the solid state source for crystal growth).

[0079] Inventive concepts will now be described more fully hereinafter with reference to the accompanying drawings, in which examples of embodiments of inventive concepts are shown. Inventive concepts may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of present inventive concepts to those skilled in the art. It should also be noted that these embodiments are not mutually exclusive. Components from one embodiment may be tacitly assumed to be present / used in another embodiment.

[0080] A material in accordance with the present disclosure may include a cyclic compound, wherein the material is cured below 300° C; wherein the material is pyrolyzed above 400° C; and wherein the material is adhesive above 1500° C.

[0081] In some embodiments, the material is adhesive below 300° C. In some embodiments, the material is adhesive above 1500° C and below 300° C to at least one of the following substrates: graphite, metal, glass, plastic, crystal, or ceramic.

[0082] In some embodiments, the pyrolysis of the material forms a glassy carbon. In some embodiments, covalent bonds between the glassy carbon and a substrate are formed.

[0083] In some embodiments, the cyclic compound is aliphatic. In some embodiments, the cyclic compound is aromatic. In some embodiments, the cyclic compound is an organosilicate, organophosphate, organoselenium, organoboron, organosulfate, or organometallic. References to metallic or organometallic compounds herein refer to all metals, i.e. transition metals, metalloids, and true metals. In some embodiments, the cyclic compound is a furanic compound. In some embodiments, the furanic compound is one of: furan, a heterofuran, a furfural, a furanone, thiophene, pyrrole, or oxazole. In some embodiments, the cyclic compound is incorporated into a macrocycle.

[0084] In some embodiments, the cyclic compound becomes a monomer of a polymer. In some embodiments, the cyclic compound is part of the backbone of the polymer. In some embodiments, the cyclic compound is a side chain of the polymer. In some embodiments, the cyclic compound becomes a homopolymer after curing. In some embodiments, the homopolymer is an unconjugated homopolymer. In some embodiments, the homopolymer is a conjugated homopolymer. In some embodiments, the homopolymer is a furanic homopolymer. In some embodiments, the polymer has a furanic backbone. In some embodiments, the polymer has furanic side chains. In some embodiments, the polymer has non-furanic side chains. In some embodiments, the polymer has a non-furanic backbone. In some embodiments, the polymer has furanic side chains. In some embodiments, the polymer is a star polymer. In some embodiments, the cyclic compound is part of a copolymer with at least one other monomer. In some embodiments, the cyclic compound and the at least one other monomer form at least one of the following copolymers: a block copolymer, an alternating copolymer, a periodic copolymer, a statistical copolymer, or a star polymer. In some embodiments, the at least one other monomer is naphthyl. In some embodiments, the at least one other monomer is polyacrylonitrile. In some embodiments the cyclic compound is part of a low dimensional material. In some embodiments the low dimensional material is a fullerene. In some embodiments the low dimensional material is a carbon nanotube.

[0085] In some embodiments, the cyclic compound is part of a covalent organic framework. In some embodiments, the cyclic compound is furanic. In some embodiments, the covalent organic framework further includes at least one non-furanic compound. In some embodiments, the cyclic compound is methylfuran. In some embodiments, the at least one non-furanic compounds is triazine. In some embodiments, the cyclic compound is bifuran. In some embodiments, the at least one of thenon-furanic compounds is bis-imine. In some embodiments, the covalent organic framework is two-dimensional. In some embodiments, the covalent organic framework is three-dimensional.

[0086] In some embodiments, the cyclic compound is part of a metal organic framework. In some embodiments, the cyclic compound is furanic. In some embodiments, the metal organic framework is two-dimensional. In some embodiments, the metal organic framework is three-dimensional.

[0087] In some embodiments, the material further includes at least one filler In some embodiments, the at least one filler undergoes a chemical change during pyrolysis.

[0088] In some embodiments, the at least one filler is one of the following: a polymer, a polyphenolic, a carbohydrate, a poly-aromatic, and organometallic, an organosilicon, an aromatic anhydride, or an aromatic imide.

[0089] In some embodiments, the at least one filler is a, polyacrylnitrile, a poly silane, a polycarbosilane, a polysiloxane, or a polyimide. In some embodiments, the at least one filler is lignin or tannic acid. In some embodiments, the at least one filler is sucrose, a polysaccharide, a cellulose, or beta-cyclodextrin. In some embodiments, the at least one filler is a cycloparaphenylene, 1,5- dihydroxynahpthalene, or 4,4’-biphenol. In some embodiments, the at least one filler is tantalum(V) methoxide. In some embodiments, the at least one filler is tetraethyl orthosilicate. In some embodiments, the at least one filler does not undergo a chemical reaction during pyrolysis. In some embodiments, the at least one filler is carbon black, graphite nanoparticles, graphene, vitreous carbon, carbon nanotubes, a fullerene, tantalum nitride, tantalum carbide, tantalum silicide, or silicon nitride.

[0090] FIG. 1 shows the structure of furfuryl alcohol, containing the functionalized aromatic ether furan 100. This organic heretocycle may be incorporated into molecular structures resulting in a UHTA. Such molecular structures may be, for example, polymers, resins, or molecular glass. Furanic polymers can function as strong adhesives both at temperatures below the onset of pyrolysis (e.g., 300° C) and at temperatures greater than the onset of pyrolysis. At temperatures below the onset of pyrolysis, these compounds can be cured into a crosslinked polymeric network that bonds to a substrate (e.g., metals, glasses, plastics, crystals, ceramics, etc.). During curing crosslinks may be formed through furan-furan coupling or coupling between furan and another dienophile. Such crosslinks may occur through a Diels- Alder cycloaddition. Substrate adhesion may be accomplished through covalent bond formation (e.g., nucleophilic substitution and Diels-Alder cycloaddition) and strong non-covalent interactions (e.g., 7t-7t stacking). At higher temperatures, furans may undergo a ring opening through the cleavage of the ethereal oxygen bond. Such ring opening may generateshighly reactive alkene and radicals that form polyaromatic cores and promote condensation of these cores into a network of bonded carbon. These reactive intermediates may also bond covalently to the substrate.

[0091] FIG. 2 shows a structure of an exemplary polymer 200 where furan is incorporated. As shown, it is an unconjugated homopolymer. FIG. 3 shows another structure of an exemplary polymer 300 where furan is incorporated. As shown, it is a conjugated homopolymer.

[0092] FIGS. 4-7 show examples of branched copolymers having furanic or non-furanic backbones with furanic or non-furanic branches. FIG. 4 shows an example of a copolymer having a furanic polymer or copolymer backbone 400 with furanic branches 402, 404, 406, 408, and 410. These furanic branches may all be of the same type, or may be different. These furanic branches may be molecules, macromolecules, polymers, or copolymers. During pyrolysis, the reactive intermediates generated through the pyrolysis of the furanic moi eties may bond together polyaromatic cores into a glassy carbon matrix and covalently link the matrix to the substrate. This is referred to as a bonded glassy carbon network and functions as a UHTA.

[0093] FIG. 5 shows an example of a copolymer having a non-furamic polymer or copolymer backbone 500 with furanic branches 502, 504, 506, 508, and 510. These furanic branches may all be of the same type, or may be different. These furanic branches may be molecules, macromolecules, polymers, or copolymers.

[0094] FIG. 6 shows an example of a copolymer having a furanic polymer or copolymer backbone600 with non-furanic branches 602, 604, 606, 608, and 610. These non-furanic branches may all be of the same type, or may be different. These non-furanic branches may be atomic substituents, molecules, macromolecules, polymers, or copolymers.

[0095] FIG. 7 shows an example of a copolymer having a furanic polymer or copolymer backbone700 with furanic branches 704, 706, and 708 and non-furanic branches 702 and 710. Fumaic branches 704, 706, and 708 may all be of the same type, or may be different. Non-furanic branches 702 and 710 may all be of the same type or may be different. The furanic branches may be atomic substituents, molecules, macromolecules, polymers, or copolymers. The non-furanic branches may be atomic substituents, molecules, macromolecules, polymers, or copolymers.

[0096] FIG. 8 shows an example of a UHTA copolymer having a furanic backbone 800 and nonfuranic epoxide branches 802. In this example, the epoxide branches 802 may crosslink uponexposure to ultraviolet light, which my occur at room temperature. During pyrolysis, the furane backbone 800 may crosslink and facilitate conversion to a bonded glassy carbon network.

[0097] FIG. 9 shows an example of a copolymer that functions as a UHTA having a non-furanic polysiloxane backbone 900 and furan branches 902. The furan branches crosslink at temperatures above 200° C, thermosetting the polymer. During pyrolysis the furan 902 undergoes a ring opening , which produces reactive alkene species that facilitate the conversion of the silane backbone 900 to bonded silicon carbide (SiC).

[0098] In some embodiments, a UHTA may be a block copolymer. A block copolymer is a type of polymer made up of two or more chemically distinct polymer segments, known as "blocks," that are covalently bonded together. These blocks are typically arranged in a linear sequence, but they can also form more complex architectures such as branched or star-like structures. Each block consists of a different type of polymer, meaning the segments have varying chemical properties. For example a block copolymer that functions as a UHTA may have repeating blocks of one or more non-furanic polymers followed by repeating blocks of one or more furanic polymers. As another example, a block copolymer that functions as a UHTA may be a periodic copolymer, in which there is a repeated pattern of non-furanic polymer blocks and furanic polymer blocks. As another example, a block copolymer that functions as a UHTA may be a statistical copolymer, in which there are both non-furanic polymer blocks and furanic polymer blocks, but where there is no repeated pattern of these blocks.

[0099] FIG. 10 is an example of a portion of a block polymer 1000 having a polyacrylonitrile (PAC) copolymer block 1002 and a furanic copolymer block 1004. At temperatures below the onset of pyrolysis, the furanic moieties may crosslink, thermosetting the polymer. During pyrolysis, the opening of the furan rings in the furanic copolymer block 1004 may produce reactive alkene species that generate bonded glassy carbon and facilitate the conversion of the polyacrylonitrile block to glassy carbon. Also during pyrolysis, the polyacrylnitrile in copolymer block 1002 may convert to polyaromatic cores that condense into glassy carbon.

[0100] FIG. 11 is an example of a portion of a block polymer UHTA 1100 having alternating napthyl monomers 1102a, 1102b, 1102c, 1102d and furanic monomers 1104a, 1104b, 1104c, 1104d. At temperatures below the onset of pyrolysis, the furanic monomers 1104a, 1104b, 1104c, 1104d may crosslink, thermosetting the polymer. During pyrolysis, the opening of the furan rings in furanic monomers 1104a, 1104b, 1104c, 1104d may produce reactive alkene species that generate bonded glassy carbon and facilitate the conversion of the naphthyl monomers 1102a, 1102b, 1102c, 1102d toglassy carbon. Also during pyrolysis, the naphthyl monomers 1102a, 1102b, 1102c, 1102d may convert to polyaromatic cores that condense into glassy carbon.

[0101] In some embodiments, a UHTA may be a star polymer. A star polymer is a type of polymer with a central core from which several polymer chains, known as arms, radiate outward. The central core can vary in size from a single atom or molecule to a macromolecule or polymer. Each arm of a star polymer is a linear polymer that extends outward from this core. The number of arms can vary. In the case of a UHTA, the arms may be furanic polymers or a combination of non-furanic and furanic polymers. FIG. 12 is an example of a star polymer UHTA 1200 having a polyaromatic core 1202, non-furanic polyA arms 1204a, 1204b, 1204c, and furanic polyB arms 1206a, 1206b, 1206c.

[0102] In some embodiments, a UHTA may be a small molecule incorporating one or more furanic functional groups. FIGs. 13a, 13b, 13c, and 13d show examples of small molecule UHTAs incorporating furanic functional groups 1300, 1302, 1304, 1306.

[0103] In some embodiments, a UHTA may be a macromolecule incorporating one or more furanic functional groups. FIGs. 14a, 14b, and 14c show examples of macromolecule UHTAs incorporating furanic monomers 1400, 1402, 1404. FIG. 15 shows an example of another macromolecule UHTA incorporating furanic monomers. Specifically, FIG. 15 shows an example of a second-generation dendrimer 1500 incorporating furanic monomers, such as 1506. A second- generation dendrimer is a type of dendrimer, which is a highly branched macromolecule. Dendrimers grow in generations, where each generation represents a new layer of branching added to the molecule. The second generation refers to the level of branching added after the first, resulting in a more complex structure. A dendrimer has a core, which is the central part of the dendrimer, from which branches (arms) radiate outward. In a second-generation dendrimer, the core has branches extending outward (first generation). Those branches themselves have additional branches (second generation). The exemplary dendrimer 1500 has an aromatic core 1502, with first and second generations of arene molecules as branch points, such as 1504, with furanic monomers, such as 1506. At temperatures below the onset of pyrolysis, the furanic monomers, such as 1506, may crosslink, thermosetting the polymer. During pyrolysis, the opening of the furan rings in furanic monomers may produce reactive alkene species that generate bonded glassy carbon and facilitate the conversion of the arene branch points to glassy carbon. Also during pyrolysis, the arene branch points, such as 1504, may providearomatic species that react with the furanic monomers after ring opening to create larger aromatic cores that incorporate into the bonded glassy carbon.

[0104] In some embodiments, a UHTA may be a heteroatom organic molecule including a furanic moiety. For example a UHTA may be an organosulfer, organoboron, organophosphorus, organosilicon, or organoselenium. FIG. 16a shows an example of an organosulfur UHTA 1600. FIGI 6b shows an example of an organoboron UHTA 1602. FIG. 16C shows an example of an organophosphorus UHTA 1604. FIG. 16d shows an example of an organosilicon UHTA 1606. FIG. 16e shows an example of an organoselenium UHTA 1608.

[0105] In some embodiments, a UHTA may be an organometallic molecule. FIGs. 17-19 show examples of organometallic UHTAs 1700, 1800, 1900. Each of these exemplary organometallic UHTAs have a metal core represented by M (1702, 1802, 1902) and furanic functional groups (1704a, 1704b, 1704c, 1704d, 1804a, 1804b, 1804c, 1804d, 1804d, 1904a, 1904b, 1904c). Metal cores in an organometallic UHTA may be platinum, palladium, gold, nickel, rhodium, Iridium, copper, cobalt, or silver.

[0106] In some embodiments, a UHTA may be a covalent organic framework. A covalent organic framework (COF) is a class of crystalline, porous materials. COFs are designed using organic building blocks that can form predictable, highly ordered two-dimensional (2D) or three-dimensional (3D) networks. COFs are held together by strong covalent bonds, making them structurally stable. COFs are highly porous, with tunable pore sizes and shapes. Their pores are often arranged in well- defined hexagonal, square, or other geometries, depending on the organic linkers used. COFs are made from organic molecules with multiple functional groups capable of forming covalent bonds (e.g., aldehydes, amines, boronic acids). These molecules serve as linkers or nodes in the framework. Some COFs form two-dimensional sheets that stack together in layers. These layers can interact with each other via weak non-covalent forces like van der Waals interactions. The stacked 2D layers often result in materials with high surface areas and tunable pore sizes. In some cases, the building blocks link together in three dimensions, forming highly porous frameworks with large internal surface areas. 3D COFs offer enhanced mechanical stability and greater accessibility to their internal pores.

[0107] FIGS. 20a and 20b is an example of a UHTA 2D covalent organic framework 2000. FIG. 20a is a structural model of exemplary UHTA 2000 showing triazine covalent linkages 2002 and methylfuran functionalized dihydroxybenzene covalent linkages 2004. FIG 21b shows the chemicalstructure of a portion of exemplary UHTA 2100, including triazine covalent linkages 2002 and methylfuran functionalized dihydroxybenzene covalent linkages 2004.

[0108] FIGS. 21a and 21b is an example of a UHTA 3D covalent organic framework 2100. FIG. 21a is a structural model of exemplary UHTA 2100 showing bifuran functionalized covalent linkages 2102 and bis-imine covalent linkages 2104. FIG 21b shows the chemical structure of a portion of exemplary UHTA 2100, including bifuran functionalized covalent linkages 2102 and bis-imine covalent linkages 2104.

[0109] In some embodiments, a UHTA may be a metal organic framework. A metal-organic framework (MOF) is a class of crystalline, porous materials made up of metal ions or clusters coordinated to organic ligands to form extended ID, 2D, or 3D structures. The metal centers in MOFs can be individual metal ions (e.g., zinc, copper, or iron) or clusters of metal atoms. These metal centers act as nodes that connect to the organic ligands. The organic ligands, or linkers, are molecules with functional groups that can coordinate to metal centers. Linkers may include carboxylates, azoles, and phosphonates. These linkers bridge the metal nodes, creating an extended network. The metal centers and organic linkers are held together by coordination bonds. FIG. 22 shows a portion of exemplary UHTA metal organic framework 2200 having metal centers 2202 coordinated to furanic bridging ligand 2204.

[0110] In some embodiments, a UHTA may include one or more fillers. Fillers may be nanomaterials or micromaterials. Fillers may be porous or nonporous. Fillers may be ceramic, including for example titamium carbide, silicon nitride, or silicon dioxide. Fillers may be inorganic compounds, including for example cadmium selenide or indium tin oxide. Fillers may be metallic, including for example tantalum, titanium, or niobium. Fillers may be metalloid, including for example silicon, germanium, or tellurium. Fillers may be mineral, including for example quartz, tantalum oxide, or zeolite. Fillers may be non-metallic, including carbon, sulfur, phosphorus, or boron. Fillers may be inorganic-inorganic composites, including for example titanium dioxide / graphene or silicon carbide / aluminum nitride. Fillers may be inorganic-inorganic hybrids, including for example gold coated iron oxide or zinc sulfide coated cadmium selenide. Fillers may be organic, including for example colloids, crystals, glasses, lipids, micelles, molecular aggregates, or polymers. Fillers may be organic-inorganic composites, including for example carbon nanotube / polymer or zinc oxide / organic molecular glass. Fillers may be organic-inorganic hybrids, including for example silicon dioxide / polymer or metal organic frameworks.[oni] Additional examples of fillers include: atomic aggregates, nanoclusters, nanoparticles, nanocrystals, nanofibers, nanorods, naotubes, nanowires, nanofilms, nanolayers, nanosheets, microsheets, meoporous materials, nano-networks, nano-arrays, microparticles, microbeads, microspheres, microcapsules, microfibers, microsponges, microgel, micromesh, or microcrystals.

[0112] Fillers may be active fillers. Examples of active fillers may include polymers such as polyacrylonitrile, polysilanes, polycarbosilanes, polysiloxanes, or polyimides; poly-phenolics such as lignin or tannic acid; carbohydrates such as sucrose, polysaccharides, cellulose, or beta-cyclodextrin; poly-aromatics such as 1,5-dihydroxynaphthalene, 4,4’ -bisphenol, or cycloparaphenylenes; organometallics such as tantalum(V) methoxide; organosilicons such as tetraethyl orthosilicate; aromatic anhydrides or aromatic imides.

[0113] Fillers may be passive fillers. Examples of passive fillers may include carbon black, graphite nanoparticles, graphene, vitreous carbon, carbon nanotubes, fullerenes, tantalum nitride, tantalum carbide, tantalum silicide, or silicon nitride.

[0114] A crystal growth system for growing crystalline material in accordance with the present disclosure may include a first component; a second component; wherein the first component is affixed to the second component using a material including a cyclic compound, wherein the material is cured below 300° C; wherein the material is pyrolyzed above 400° C; and wherein the material is adhesive above 1500° C.

[0115] In some embodiments, the first component is a seed holder. In some embodiments, the second component is a crucible.

[0116] In some embodiments, the material is adhesive below 300° C.

[0117] In some embodiments, at least one of the first component and the second component are one of the following materials: graphite, metal, glass, plastic, crystal, or ceramic.

[0118] In some embodiments, the pyrolysis of the material forms a glassy carbon. In some embodiments, covalent bonds are formed between the glassy carbon and at least one surface of either the first component or the second component.

[0119] In some embodiments, the cyclic compound is aliphatic. In some embodiments, the cyclic compound is aromatic. In some embodiments, the cyclic compound is an organosilicate, organophosphate, organoselenium, organoboron, organosulfate, or organometallic. In some embodiments, the cyclic compound is a furanic compound. In some embodiments, the furanic compound is one of: furan, a heterofuran, a furfural, a furanone, thiophene, pyrrole, or oxazole.

[0120] In some embodiments, the cyclic compound is incorporated into a macrocycle.

[0121] In some embodiments, the cyclic compound becomes a monomer of a polymer after pyrolysis. In some embodiments, the cyclic compound is part of the backbone of the polymer. In some embodiments, the cyclic compound is a side chain of the polymer. In some embodiments, the cyclic compound becomes a homopolymer after curing. In some embodiments, the homopolymer is an unconjugated homopolymer. In some embodiments, the homopolymer is a conjugated homopolymer. In some embodiments, the homopolymer is a furanic homopolymer.

[0122] In some embodiments, the polymer has a furanic backbone. In some embodiments, the polymer has furanic side chains. In some embodiments, the polymer has non-furanic side chains.

[0123] In some embodiments, the polymer has a non-furanic backbone. In some embodiments, the polymer has furanic side chains.

[0124] In some embodiments, the polymer is a star polymer.

[0125] In some embodiments, the cyclic compound is a copolymer with at least one other monomer. In some embodiments, the cyclic compound and the at least one other monomer form at least one of the following copolymers: a block copolymer, an alternating copolymer, a periodic copolymer, a statistical copolymer, or a star polymer. In some embodiments, the at least one other monomer is naphthyl. In some embodiments, the at least one other monomer is polyacrylonitrile.

[0126] In some embodiments, the cyclic compound is part of a covalent organic framework. In some embodiments, the cyclic compound is furanic. In some embodiments, the covalent organic framework further includes at least one non-furanic compound. In some embodiments, the cyclic compound is methylfuran. In some embodiments, the at least one non-furanic compounds is triazine. In some embodiments, the cyclic compound is bifuran. In some embodiments, the at least one of the non-furanic compounds is bis-imine. In some embodiments, the covalent organic framework is two-dimensional. In some embodiments, the covalent organic framework is three-dimensional.

[0127] In some embodiments, the cyclic compound is part of a metal organic framework. In some embodiments, the cyclic compound is furanic. In some embodiments, the metal organic framework is two-dimensional. In some embodiments, the metal organic framework is three-dimensional.

[0128] In some embodiments, the material further includes at least one filler. In some embodiments, the at least one filler undergoes a chemical change during pyrolysis. In some embodiments, the at least one filler is one of the following: a polymer, a poly-phenolic, a carbohydrate, a poly-aromatic, and organometallic, an organosilicon, an aromatic anhydride, or an aromatic imide.In some embodiments, the at least one filler is a, polyacrylnitrile, a polysilane, a polycarbosilane, a polysiloxane, or a polyimide. In some embodiments, the at least one filler is lignin or tannic acid. In some embodiments, the at least one filler is sucrose, a polysaccharide, a cellulose, or betacyclodextrin. In some embodiments, the at least one filler is a cycloparaphenylene, 1,5- dihydroxynahpthalene, or 4,4’-biphenol. In some embodiments, the at least one filler is tantalum(V) methoxide. In some embodiments, the at least one filler is tetraethyl orthosilicate. In some embodiments, the at least one filler does not undergo a chemical reaction during pyrolysis. In some embodiments, the at least one filler is carbon black, graphite nanoparticles, graphene, vitreous carbon, carbon nanotubes, a fullerene, tantalum nitride, tantalum carbide, tantalum silicide, or silicon nitride.

[0129] Certain embodiments of the present disclosure may also include one or more additives to enhance the flexibility, workability, or durability of any of the furanic compounds or materials disclosed herein (i.e., plasticizers). Such plasticizers are known to persons skilled in the art and may include any appropriate additives to achieve the desired properties. Examples of such placticizers include phthalates (e g., diethylhexyl phthalate (DEHP) or diisononyl phthalate (DINP)), adipates (e.g., di-2-ethylhexyl adipate (DOA)), citrates (e.g., acetyl tributyl citrate), sebecates (e.g., di-2- ethylhexyl sebacate (DEHS)), epoxidized soybean oil (ESO), ethylene glycol and its esters, nitrates, benzoates, or polysorbates.

[0130] In some embodiments, compounds, materials, and methods disclosed herein may be used to create a coating, surface treatment, or subsurface treatment for any part of a crystal growth system, including but not limited to a source or a baffle. Such parts may include an engineered structure having a construction or configuration that is or includes one or more of a porous structure, woven wire, perforated plate, foam, screen printed material, refractory metal, 3D printed structure, coated wire, carbon fiber mesh, carbon wires, refractory metal wires, woven mesh, cast component(s), grid, sintered powder, composite laminate, electroformed structure, braided wire, honeycomb structure, felt structure, nanostructured film, carbon nanotubes, tightly or loosely interconnected network of structures or other suitable construction or configuration. One or more combinations of any of these constructions or configurations may be used without deviating from the scope of the present disclosure. For example, in some embodiments, a first baffle structure (e.g., a first baffle plate) may include a first configuration (e.g., porous material) and a second baffle structure (e.g., a second baffle plate) may include a second configuration (e.g., honeycomb structure).

[0131] One example of a crystal growth system is chemical vapor deposition (CVD). CVD is a process used to grow high-quality crystals of materials, especially semiconductors, metals, and other compounds, by transporting chemical species in vapor form from a source to a growth site. In CVD, a solid material (source) is heated in the presence of a transport agent, usually a halogen gas like iodine, chlorine, or bromine. The source material reacts with the transport agent to form a volatile compound, which is then transported to a cooler region of the chamber. Upon reaching the cooler region, the vaporized material decomposes or reacts to deposit the pure solid, resulting in crystal growth.

[0132] Another example of a crystal growth system is physical vapor transport (PVT). PVT is a process used to grow single crystals from the vapor phase without the use of a liquid or solution medium. This process involves sublimating a solid material, transporting the vapor to a cooler region of the chamber, and allowing the vapor to condense and crystallize on a substrate or seed crystal. Crystal growth systems may also be a hybrid of CVD and PVT processes.

[0133] Crystal growth systems may employ ultra-high temperatures. For example, systems for bulk crystal growth may reach temperatures in the range of 1700° C to 2600° C or higher. Also for example, systems for epitaxial growth may reach temperatures in the range of 900° C to 1700° C.

[0134] One or more baffle structures may be used in crystal growth systems and deposition systems (e.g., epitaxial reactors), such as silicon carbide crystal growth sublimation systems to accommodate the transport (e.g., kinetic factors) of source material vapor while enhancing control over a thermal gradient or chemical environment. For instance, in some examples, a baffle may accommodate a transport of vapor (e.g., source material vapor) while providing a physical separation of chemical and / or thermal environments between a sublimating source material and a seed material experiencing deposition at a growth front. Such baffle structures may be created from or may have a coating created thereon according to certain embodiments of the present disclosure.

[0135] In some embodiments, the crystal growth system may include a baffle within the crystal growth chamber that may be spaced apart from the silicon carbide vapor source material.

[0136] In some embodiments, the baffle includes a porous material, such as porous graphite. In some examples, at least a portion of the baffle has a porosity of greater than about 50% by volume, such as greater than about 70% by volume, such as greater than 80% by volume. Porosity by volume expressed as a percentage refers to the percentage of the volume of voids in the baffle relative to the total volume of the material.

[0137] In some embodiments, the baffle includes one or more apertures defined through a thickness of the baffle. As used herein, an “aperture” is a defined opening, space, perforation, hole, or void in a structure that extends from one exterior surface of a structure to another exterior surface of the structure. In some embodiments, each of the one or more apertures provides a path through the baffle for transport of vapor from the silicon carbide source material to the seed crystal without having significant crystal growth formation in the aperture.

[0138] In some embodiments, the baffle has a long dimension that is generally non-perpendicular to the growth surface of the seed crystal. In some embodiments, the baffle has a thickness in a direction of vapor transport through the baffle. As used herein, the “width” or “width dimension” refers to a dimension of a baffle, an aperture, or other structure that runs in a plane that is perpendicular to the transport direction of vapor to the crystal growth system. The “long dimension” of a baffle, an aperture, or other structure refers to the longest dimension (e.g., greatest in magnitude) of the structure.

[0139] In some examples, the one or more apertures include a plurality of holes defined through the baffle. In some examples, the one or more apertures include an annular aperture defined through a thickness of the baffle. In some examples, a vapor transport direction through the one or more apertures is in a non-perpendicular direction relative to the growth surface of the seed crystal.

[0140] In some examples, the one or more apertures are arranged in the baffle to provide for non- uniform vapor transport from the source material to the seed crystal. As used herein, a baffle provides non-uniform vapor transport when vapor is transported through a first portion of the baffle at a first rate and is transported through a second portion of the baffle at a second rate. The first rate is different from the second rate. For instance, a baffle may include a first portion with one or more apertures that transports vapor at a first rate. The baffle may include a second portion without apertures that transports vapor at a second rate.

[0141] In some examples, the one or more apertures include a first aperture and a second aperture, wherein a width of the first aperture is different from a width of the second aperture. In some examples, the one or more apertures include a first plurality of apertures and a second plurality of apertures, wherein a density of the first plurality of apertures in the baffle is different from a density of the second plurality of apertures in the baffle. In some examples, the first plurality of baffles are in a central portion of the baffle and the second plurality of baffles are in a peripheral portion of the baffle. In some examples, the baffle includes a plurality of dividers arranged in a non-perpendicular direction relative to the growth surface of the seed crystal. In some examples, the one or more apertures arearranged to direct vapor in a direction that is more towards a center of the seed crystal relative to a peripheral portion of the seed crystal. In some examples, the one or more apertures are arranged to direct vapor in a direction that is more towards a peripheral portion of the seed crystal relative to a central portion of the seed crystal.

[0142] In some examples, at least one surface of the baffle may be flat, whereas in other examples, at least one surface of the baffle may be concave, convex, angled, or other topographies. In some examples, the surface of the baffle closest to the seed crystal may have a particular topography and the surface of the baffle furthest from the seed crystal may have a different topography.

[0143] In some examples, the baffle includes a plurality of baffle structures (e.g., baffle plates). In some examples, the baffle includes a first baffle plate having the one or more apertures and a second baffle plate with no apertures. In some examples, the baffle includes a first baffle plate includes a first aperture and a second baffle plate including a second aperture. In some examples, the first aperture is aligned with the second aperture. In some examples, the first aperture is not aligned with the second aperture. In some examples, the first aperture has a different width relative to the second aperture. In some examples, the baffle includes a first baffle plate including a first material and a second baffle plate including a second material. In some examples, the first baffle plate includes graphite and the second baffle plate includes a source material (e.g., carbon source material, carbon source material, etc.). In some examples, the baffle includes a third baffle plate, wherein the third baffle plate includes the first material. In some examples, the second baffle plate is arranged between the first baffle plate and the third baffle plate. In some examples, the first material includes graphite and the second material includes a source material (e.g., silicon carbide source material and / or carbon source material (e.g., graphite).

[0144] In some examples having a plurality of baffle structures, the baffle structures may be in contact with one another. In some examples, the plurality of baffle structures may not be in contact with one another. In some examples, the plurality of baffle structures may include other structures between them.

[0145] In some examples, the baffle includes graphite. In some examples, the baffle includes a coating on the graphite. In some examples, the coating is only on a portion of the baffle. In some examples, the baffle includes multiple coatings, including different regions of the baffle having distinct coatings. In some examples, the coating is a pyrolytic coating. In some examples, the coating includes tantalum carbide. In some examples, the graphite is porous graphite.

[0146] In some examples, the baffle is spaced apart from the seed holder and is not coupled to the seed holder. In some examples, the baffle is coupled to a side wall of the crucible.

[0147] In addition, the baffle, or a portion thereof, may potentially act as a second source (e.g., a carbon source). For instance, if a reactive material is used as a baffle, the baffle may be etched such that the baffle contributes positively to species interacting with the seed crystal during a growth process. The baffle, or a portion thereof, can be made of a reactive material that captures parasitic silicon carbide, or silicon carbide that crystallizes in an undesirable location, and act as a dynamic source if the captured silicon carbide is sublimated, if desired. Further, the baffle may act as an additional gas injection site for process gases.

[0148] In addition, if a large surface area of material that is non-reactive or inert with respect to carbon and silicon species is provided, the inert material may provide a catalytic surface that facilitates gas-gas reactions (e.g., to change ratios of silicon, carbon, and / or species containing silicon and / or carbon in the vapor). That is, gas stoichiometry in the vicinity of the baffle may be brought towards equilibrium. This may facilitate enhanced growth rates and less material waste. In some embodiments, at least a portion of the baffle may have a chemically active surface or coating that may be used to reduce contaminates, impurities, and inclusions in vapor transported through the baffle.

[0149] Examples of crystal growth systems, including crystal growth systems incorporating exemplary baffle structures are disclosed in U.S. Patent Application No. 18 / 962,454, filed November 27, 2024, which is incorporated herein by reference.

[0150] FIG. 23 is a cross-sectional schematic diagram of a crystal growth system 2312 adapted for use in a crystal growth process of the type contemplated by certain embodiments of the disclosure. The crystal growth system 2312 includes a reaction crucible 2314 (also referred to as a susceptor or growth cell) and a plurality of induction coils 2316 adapted to heat the reaction crucible 2314 when electrical current is applied. Alternatively, a resistive heating approach may be applied to the heating of the reaction crucible 2314. Using any competent heating mechanism and approach, the temperature within the crystal growth system 2312 may be controllable. The reaction crucible 2314 may be, at least in part, a graphite structure.

[0151] The crystal growth system 2312 may also include one or more gas inlet and gas outlet ports and associated equipment allowing the controlled introduction and evacuation of gas from an environment surrounding the reaction crucible 2314. The introduction and evacuation of various gasses to or from the environment surrounding the reaction crucible 2314 may be accomplished usinga variety of inlets / outlets, pipes, valves, pumps, gas sources, and controllers. It will be further understood by those skilled in the art, using the disclosures provided herein, that the crystal growth system 2312 may further incorporate in certain embodiments a water-cooled quartz vessel.

[0152] The reaction crucible 2314 may be surrounded by an insulation material 2318. The composition, size, and placement of the insulation material 2318 will vary with an individual crystal growth system, such as the crystal growth system 2312 of FIG. 23, to define and / or maintain desired thermal gradients (both axially and radially) in relation to the reaction crucible 2314. For purposes of clarity, the term, “thermal gradient,” will be used herein to describe one or more thermal gradient(s) associated with the reaction crucible 2314. Those skilled in the art, using the disclosures provided herein, recognize that “the thermal gradient” established in embodiments of the disclosure will contain (or may be further characterized as having) axial and radial gradients, or may be characterized by a plurality of isotherms.

[0153] Prior to establishment of the thermal gradient, the reaction crucible 2314 is loaded with a source material 2320 (e.g., silicon carbide vapor source material, such as a silicon carbide powder or solid silicon carbide source). As such, the reaction crucible 2314 includes one or more portions, at least one of which is capable of providing the source material 2320. The source material 2320 may be held in a lower portion of the reaction crucible 2314, as is common for one type of crystal growth system, such as the crystal growth system 2312 of FIG. 23.

[0154] A seed material 2322 may be placed above or in an upper portion of the reaction crucible 2314. The seed material 2322 may take the form of a silicon carbide seed wafer having a diameter, for instance, from about 50 mm to about 310 mm. A silicon carbide crystal boule will be grown from the seed material 2322 during a crystal growth process.

[0155] In the embodiment illustrated in FIG. 23, a seed holder 2324 is used to hold the seed material 2322. The seed holder 2324 is securely attached to the reaction crucible 2314 in an appropriate fashion. For example, in the orientation illustrated in FIG. 23, the seed holder 2324 is attached to an uppermost portion of the reaction crucible 2314 to hold the seed material 2322 in a desired position. In some embodiments, the seed holder 2324 is fabricated from carbon (e.g., graphite). The attachment of the seed material 2322 (e.g., a seed wafer) to the seed holder 2324 within the crystal growth system 2312 may be made, for instance, by a uniform thermal contact. Various techniques may be used to implement a uniform thermal contact. For example, the seed material 2322 may be placed in direct physical contact with the seed holder 2324, or an adhesive may be used to fix the seedmaterial 2322 to the seed holder 2324, so as to provide uniform conductive and / or radiative heat transfer over substantially the entire area between the seed material 2322 and the seed holder 2324.

[0156] According to example aspects of the present disclosure, the crystal growth system 2312 may include a baffle 2326 that may be situated on the source material 2320 or at any other location within the crystal growth system 2312. The baffle 2326 may provide a mechanism for transport of source vapor or other process gas during sublimation of the source material 2320. The baffle 2326 may filter or otherwise reduce impurities from the source material 2320 that may inadvertently sublimate in a crystal growth process. The baffle may have any spatial orientation relative to the source material 2320, the seed material 2322, and / or the reaction crucible 2314. The baffle 2326 may include any of the baffles discussed in relation to FIGS. 33A-39.

[0157] Further, the crystal growth system 2312 may optionally include the source material holder 2330. The source material holder 2330 may be, for example, one or more graphite components within the reaction crucible 2314 that brace or support the shaped solid source material 2320. In some embodiments, the source material holder 2330 may be attached to the inner walls of the reaction crucible 2314, as shown in FIG. 23.

[0158] FIG. 23 depicts a coordinate system having an x-axis as a horizontal axis, a y-axis that is in and out of the page, and a z-axis that is a vertical axis. A width dimension refers to a dimension along the x-axis or y-axis. A thickness dimension refers to a dimension along the z-axis. For the sake of clarity, any dimension along the x-axis or y-axis may be considered a width dimension regardless of whether it is the shortest or longest dimension in a plane defined by the x-axis and y-axis.

[0159] In one example embodiment, shown in FIG. 24, the crystal growth system 2332 may be similar to that shown in FIG. 23, but may also include an inlet 2334 for introducing a dopant (e.g., N2) to the reaction crucible 2314. The inlet 2334, may be, for example, a tube, pipe, vent, or the like. In some embodiments, the source material 2320 may surround the inlet 2334. For example, in some embodiments, the source material 2320 may include a channel through which the inlet 2334 is provided. In other embodiments, the source material 2320 may include a plurality of subcomponents (attached or detached) which surround the inlet 2334. The inlet 2334 may be connected to a dopantcontaining gas source (not shown) and configured to introduce the dopant-containing gas to the reaction crucible 2314. An example of a dopant-containing gas is nitrogen.

[0160] The crystal growth system 2332 may include the baffle 2326 that may be situated within the reaction crucible 2314. The baffle 2326 may provide a mechanism for the transport of source vaporduring sublimation of the source material 2320. The baffle 2326 may have any spatial orientation relative to the source material 2320, the seed material 2322, and / or the reaction crucible 2314. The baffle 2326 may filter or otherwise reduce impurities from the source material 2320 that may inadvertently sublimate in a crystal growth process. The baffle 2326 may include any of the baffles discussed in relation to FIGS. 33A-39.

[0161] In another example embodiment, shown in FIG. 25, the crystal growth system 2342 may be a continuous feed PVT (CF-PVT) system. In a CF-PVT system, such as the crystal growth system 2342 of FIG. 25, the reaction crucible may include an upper chamber 2344 and a lower chamber 2346. The upper chamber 2344 may include the source material 2320 and the seed material 2322. The upper chamber 2344 may be separated from the lower chamber 2346 by a foamed structure 2350. The foamed structure 2350 may be formed, for example, from a gas-permeable graphite foam. The source material 2320 may be placed on the foamed structure 2350 within the upper chamber 2344. A gaseous silicon source (e.g., trimethylsilane diluted in argon) may be supplied to the lower chamber 2346. As the gaseous silicon source is transported through the foamed structure 2350, it may react with a carbon source within the foamed structure 2350 (e.g., graphite) to form silicon carbide. A CF-PVT system, such as the crystal growth system 2342 of FIG. 25, combines a PVT process for the growth of single crystals and high temperature chemical vapor deposition (HTCVD) processes for the in-situ formation and continuous feeding of a high purity polycrystalline source. A CF-PVT system, such as the crystal growth system 2342 of FIG. 25, may be particularly useful for growing 3C silicon carbide.

[0162] The crystal growth system 2342 may include a baffle 2326 that may be situated within the upper chamber 2344 of the reaction crucible. The baffle 2326 may provide a mechanism for the transport of source vapor during sublimation of the source material 2320. The baffle 2326 may filter or otherwise reduce impurities from the source material 2320 that may inadvertently sublimate in a crystal growth process. The baffle 2326 may have any spatial orientation relative to the source material 2320, the seed material 2322, and / or the upper chamber 2344 of the reaction crucible. The baffle 2326 may include any of the baffles discussed in relation to FIGS. 33A-38.

[0163] In any of the embodiments shown in FIGS. 23-25, the crystal growth systems 2312, 2412, 2512, and / or the reaction crucible 2314 may be implemented in a number of different geometries, or any suitable configurations, and may hold the source material 2320 accordingly. Thus, while embodiments of the present disclosure may be illustrated with certain designs of the reaction crucible 2314, the scope of the present disclosure is not limited to such designs but will find application indifferent crystal growth system designs using many different types of reaction crucibles. In some examples, the crystal growth processes (e.g., the processes conducting in any of the embodiments shown in FIGS. 23-25) may be conducted at process temperatures in a range of 1700 °C to about 2600 or

[0164] As shown in FIG. 23, the baffle 2326 or baffle elements may be located on the source material, may be spaced apart from the source material 2320 and / or the seed material 2322, or may be proximate the seed material 2322. In some embodiments, the system 2312 may include any number of baffles or baffle elements 2326 without deviating from the scope of the present disclosure. In some embodiments, the source material 2320 may have a baffle 2326 or baffle element incorporated therein.

[0165] Example silicon carbide source materials are disclosed in U.S. Provisional Application Serial No. 63 / 689,294, filed on August 30, 2024 and in U.S. Provisional Application Serial No.63 / 689,291, filed on August 30, 2024, both of which are incorporated herein by reference.

[0001] The use of 3D printing to create parts and structures to be used in a crystal growth system or the source is disclosed in U.S Provisional Application Serial No. 63 / 689,298, filed on August 30,2024, which is incorporated herein by reference.

[0002] FIG. 32 depicts an example deposition system 3200 (e.g., epitaxial reactor) that may include structures according to example embodiments of the present disclosure. The deposition system 3200 may be a horizontal, hot wall, flow through, warm wall, and shower head CVD system as shown including a susceptor assembly 3202, a quartz tube 3204 defining a through passage 3206, an electromagnetic frequency (EMF) generator 3208 (for example, including a power supply and an RF coil surrounding the tube 3204) and a process gas supply system 3210. An insulative cover 3212 may be provided about the susceptor assembly 3202 in addition to or in place of the quartz tube 3204 The deposition system 3200 may be used to form a layer or film (e.g., epitaxial layer) on a workpiece 3220 (e.g., a silicon carbide semiconductor wafer). In some examples, the deposition process using the deposition system 3200 may occur at a process temperature in a range of about 900 °C to about 1700 °C. While only a single workpiece 3220 is shown in FIG. 32, the system 3200 may be adapted to form films concurrently on multiple workpieces without deviating from the scope of the present disclosure.

[0003] The workpiece 3220 may be on a workpiece holder 3225. The workpiece holder 3225, in some examples, may be coupled to a rotation shaft to provide rotation of the workpiece 3220 during processing.

[0004] In some embodiments, the process gas supply system 3210 may supply a process gas into and through the susceptor assembly 3202 as discussed below. The EMF generator 3208 inductively heats the susceptor assembly 3202 to provide a hot zone in the susceptor assembly 3202 where deposition reactions take place. The process gas continues through and out of the susceptor assembly 3202 as an exhaust gas which may include remaining components of the process gas as well as reaction by-products, for example.

[0005] The susceptor assembly 3202 and / or the insulative cover 3212 may be, at least in part, a structure having a metal carbide coating. In some embodiments, the susceptor assembly 3202 and / or the insulative cover 3212 may be a structure according to example embodiments of the present disclosure.

[0006] In any of the systems shown in FIGS. 23-25 or FIG. 32 or any other suitable sublimation growth systems, reaction crucible 2314 may be implemented in a number of different shapes and may hold one or more source materials accordingly. Thus, while embodiments of the present disclosure may be illustrated with certain reaction crucible designs, the scope of the present disclosure is not limited to such designs but will find application in different systems using may different types of reaction crucibles.

[0007] Crystal growth systems may also include source retention mechanisms. Example embodiments of source retention mechanisms are shown in FIGS. 26a and 26b. In FIG. 26a, the source retention mechanism 2632 contains cylindrical side walls 2634, a cap 2636, and channels 2638 formed in the side walls 2634 and cap 2636. As shown in FIG. 26a, the channels may all have the same or a similar diameter. In some embodiments, the diameters of the channels may be different and designed based on desired vapor flow paths and flowrates. For example, in some embodiments, the cap may have larger channels, or even one large central channel, relative to smaller or no peripheral channels.

[0008] The retention mechanism can be used to contain a source material, particularly when it is formed from multiple separate shaped solids (e.g., spheres). The channels 2638 allow sublimated vapor to escape into the main chamber of the reaction crucible where they can reach the seed material or growing crystal. The channels may be designed / located to control the vapor flow within the crucible. For example, they can direct the vapor to specific parts of the seed material or growing crystal. In some embodiments, the channels in the side walls 2634 may be omitted so that sublimated vapor can only exit through the channels in the cap 2636. In some embodiments, the cap 2636 maybe omitted, as shown in FIG. 26b. In some embodiments, rather than, or in addition to, channels 2638, the source walls and / or cap of the retention mechanism that may be made from a highly porous material that the sublimated vapor can escape through.

[0009] In some embodiments, it may be desired to restrict vapor flow from either the sides or the top. As such, the sides or top of the retention mechanism may be formed from a material with no or relatively low porosity. The retention mechanism may be formed from graphite, silicon carbide, or any other suitable material. When the retention mechanism is formed from silicon carbide, it may act as an additional solid source structure. The retention mechanism may be sized to fit within the inner walls of the crucible. The retention mechanism may contact the sidewalls of the crucible or may be spaced apart from them, leaving paths for vapor flow radially outward from the retention mechanism.

[0010] The UHTA in accordance with the present disclosure may be used to adhere a first component and a second component by applying a material comprising a cyclical compound to at least one of the first or second component; curing the material below 300° C; pyrolyzing the material above 400° C; wherein the material is adhesive above 1500° C.

[0011] In some embodiments, the first component is a seed holder. In some embodiments, the second component is a crucible.

[0012] In some embodiments, the material is adhesive below 300° C. In some embodiments, the material is adhesive above 1500° C and below 300° C to at least one of the following substrates: metal, glass, plastic, crystal, or ceramic.

[0013] In some embodiments, the pyrolysis of the material forms a glassy carbon. In some embodiments, covalent bonds between the glassy carbon and a substrate are formed.

[0014] In some embodiments, the cyclic compound is aliphatic. In some embodiments, the cyclic compound is aromatic. In some embodiments, the cyclic compound is an organosilicate, organophosphate, organoselenium, organoboron, organosulfate, or organometallic. In some embodiments, the cyclic compound is a furanic compound. In some embodiments, the furanic compound is one of: furan, a heterofuran, a furfural, a furanone, thiophene, pyrrole, or oxazole.

[0015] In some embodiments, the cyclic compound is incorporated into a macrocycle.

[0016] In some embodiments, the cyclic compound becomes a monomer of a polymer after pyrolysis. In some embodiments, the cyclic compound is part of the backbone of the polymer. In some embodiments, the cyclic compound is a side chain of the polymer. In some embodiments, the cyclic compound becomes a homopolymer after curing. In some embodiments, the homopolymer isan unconjugated homopolymer. In some embodiments, the homopolymer is a conjugated homopolymer. In some embodiments, the homopolymer is a furanic homopolymer. In some embodiments, the polymer has a furanic backbone. In some embodiments, the polymer has furanic side chains. In some embodiments, the polymer has non-furanic side chains. In some embodiments, the polymer has a non-furanic backbone. In some embodiments, the polymer has furanic side chains.

[0017] In some embodiments, the polymer is a star polymer.

[0018] In some embodiments, the cyclic compound is a copolymer with at least one other monomer. In some embodiments, the cyclic compound and the at least one other monomer form at least one of the following copolymers: a block copolymer, an alternating copolymer, a periodic copolymer, a statistical copolymer, or a star polymer. In some embodiments, the at least one other monomer is naphthyl. In some embodiments, the at least one other monomer is polyacrylonitrile.

[0019] In some embodiments, the cyclic compound is part of a covalent organic framework. In some embodiments, the cyclic compound is furanic. In some embodiments, the covalent organic framework further includes at least one non-furanic compound. In some embodiments, the cyclic compound is methylfuran. In some embodiments, the at least one non-furanic compounds is triazine. In some embodiments, the cyclic compound is bifuran. In some embodiments, the at least one of the non-furanic compounds is bis-imine. In some embodiments, the covalent organic framework is two-dimensional. In some embodiments, the covalent organic framework is three-dimensional.

[0020] In some embodiments, the cyclic compound is part of a metal organic framework. In some embodiments, the cyclic compound is furanic. In some embodiments, the metal organic framework is two-dimensional. In some embodiments, the metal organic framework is three-dimensional.

[0021] In some embodiments, the material further includes at least one filler. In some embodiments, the at least one filler undergoes a chemical change during pyrolysis. In some embodiments, the at least one filler is one of the following: a polymer, a poly-phenolic, a carbohydrate, a poly-aromatic, and organometallic, an organosilicon, an aromatic anhydride, or an aromatic imide. In some embodiments, the at least one filler is a, polyacrylnitrile, a polysilane, a polycarbosilane, a polysiloxane, or a polyimide. In some embodiments, the at least one filler is lignin or tannic acid. In some embodiments, the at least one filler is sucrose, a polysaccharide, a cellulose, or betacyclodextrin. In some embodiments, the at least one filler is a cycloparaphenylene, 1,5- dihydroxynahpthalene, or 4,4’-biphenol. In some embodiments, the at least one filler is tantalum(V) methoxide. In some embodiments, the at least one filler is tetraethyl orthosilicate. In someembodiments, the at least one filler does not undergo a chemical reaction during pyrolysis. In some embodiments, the at least one filler is carbon black, graphite nanoparticles, graphene, vitreous carbon, carbon nanotubes, a fullerene, tantalum nitride, tantalum carbide, tantalum silicide, or silicon nitride.

[0022] As shown in FIG. 27, certain aspects of this disclosure and their embodiments describe a method of adhering a first component and a second component, such method including: applying a material comprising a cyclical compound to at least one of the first or second component 2700; curing the material below 300° C 2702; pyrolyzing the material above 400° C; wherein the material is adhesive above 1500° C 2704.

[0023] A ceramic slurry paint in accordance with the present disclosure may include an organic solvent; a cyclic compound; and ceramic microparticles.

[0024] In some embodiments, the ceramic slurry paint is dried below 100° C. In some embodiments, the ceramic slurry paint is cured below 300° C. In some embodiments, the material is sintered above 1500° C.

[0025] In some embodiments, the cyclic compound is aliphatic. In some embodiments, the cyclic compound is aromatic. In some embodiments, the cyclic compound is an organosilicate, organophosphate, organoselenium, organoboron, organosulfate, or organometallic. In some embodiments, the cyclic compound is a furanic compound. In some embodiments, the furanic compound is one of: furan, a heterofuran, a furfural, a furanone, thiophene, pyrrole, or oxazole. In some embodiments, the cyclic compound is incorporated into a macrocycle.

[0026] In some embodiments, the cyclic compound becomes a monomer of a polymer after sintering. In some embodiments, the cyclic compound is part of the backbone of the polymer. In some embodiments, the cyclic compound is a side chain of the polymer. In some embodiments, the cyclic compound becomes a homopolymer after curing. In some embodiments, the homopolymer is an unconjugated homopolymer.

[0027] In some embodiments, the homopolymer is a conjugated homopolymer. In some embodiments, the homopolymer is a furanic homopolymer. In some embodiments, the polymer has a furanic backbone. In some embodiments, the polymer has furanic side chains. In some embodiments, the polymer has non-furanic side chains. In some embodiments, the polymer has a non-furanic backbone. In some embodiments, the polymer has furanic side chains.

[0028] In some embodiments, the polymer is a star polymer.

[0029] In some embodiments, the cyclic compound is a copolymer with at least one other monomer. In some embodiments, the cyclic compound and the at least one other monomer form at least one of the following copolymers: a block copolymer, an alternating copolymer, a periodic copolymer, a statistical copolymer, or a star polymer. In some embodiments, the at least one other monomer is naphthyl. In some embodiments, the at least one other monomer is polyacrylonitrile.

[0030] In some embodiments, the cyclic compound is part of a covalent organic framework. In some embodiments, the cyclic compound is furanic. In some embodiments, the covalent organic framework further includes at least one non-furanic compound. In some embodiments, the cyclic compound is methylfuran. In some embodiments, the at least one non-furanic compounds is triazine. In some embodiments, the cyclic compound is bifuran. In some embodiments, the at least one of the non-furanic compounds is bis-imine. In some embodiments, the covalent organic framework is two-dimensional. In some embodiments, the covalent organic framework is three-dimensional.

[0031] In some embodiments, the cyclic compound is part of a metal organic framework. In some embodiments, the cyclic compound is furanic. In some embodiments, the metal organic framework is two-dimensional. In some embodiments, the metal organic framework is three-dimensional.

[0032] In some embodiments, the material further includes at least one filler. In some embodiments, the at least one filler undergoes a chemical change during sintering. In some embodiments, the at least one filler is one of the following: a polymer, a poly-phenolic, a carbohydrate, a poly-aromatic, and organometallic, an organosilicon, an aromatic anhydride, or an aromatic imide. In some embodiments, the at least one filler is a, polyacrylnitrile, a polysilane, a polycarbosilane, a polysiloxane, or a polyimide

[0033] In some embodiments, the at least one filler is lignin or tannic acid. In some embodiments, the at least one filler is sucrose, a polysaccharide, a cellulose, or beta-cyclodextrin. In some embodiments, the at least one filler is a cycloparaphenylene, 1,5-dihydroxynahpthalene, or 4,4’- biphenol. In some embodiments, the at least one filler is tantalum(V) methoxide. In some embodiments, the at least one filler is tetraethyl orthosilicate. In some embodiments, the at least one filler does not undergo a chemical reaction during sintering. In some embodiments, the at least one filler is carbon black, graphite nanoparticles, graphene, vitreous carbon, carbon nanotubes, a fullerene, tantalum nitride, tantalum carbide, tantalum silicide, or silicon nitride.

[0034] Creating a ceramic coating on a surface in accordance with the present disclosure may include applying a ceramic slurry paint to the surface, wherein the organic slurry paint comprises: anorganic solvent; a cyclic compound; and ceramic microparticles; drying the ceramic slurry paint on the surface below 100° C; curing the ceramic slurry paint on the surface below 300° C; and sintering the ceramic slurry paint on the surface above 1500° C.

[0035] In some embodiments, the cyclic compound is aliphatic. In some embodiments, the cyclic compound is aromatic. In some embodiments, the cyclic compound is an organosilicate, organophosphate, organoselenium, organoboron, organosulfate, or organometallic. In some embodiments, the cyclic compound is a furanic compound. In some embodiments, the furanic compound is one of: furan, a heterofuran, a furfural, a furanone, thiophene, pyrrole, or oxazole. In some embodiments, the cyclic compound is incorporated into a macrocycle.

[0036] In some embodiments, the cyclic compound becomes a monomer of a polymer after pyrolysis. In some embodiments, the cyclic compound is part of the backbone of the polymer. In some embodiments, the cyclic compound is a side chain of the polymer. In some embodiments, the cyclic compound becomes a homopolymer after curing. In some embodiments, the homopolymer is an unconjugated homopolymer.

[0037] In some embodiments, the homopolymer is a conjugated homopolymer. In some embodiments, the homopolymer is a furanic homopolymer. In some embodiments, the polymer has a furanic backbone. In some embodiments, the polymer has furanic side chains. In some embodiments, the polymer has non-furanic side chains. In some embodiments, the polymer has a non-furanic backbone. In some embodiments, the polymer has furanic side chains.

[0038] In some embodiments, the polymer is a star polymer.

[0039] In some embodiments, the cyclic compound is a copolymer with at least one other monomer. In some embodiments, the cyclic compound and the at least one other monomer form at least one of the following copolymers: a block copolymer, an alternating copolymer, a periodic copolymer, a statistical copolymer, or a star polymer. In some embodiments, the at least one other monomer is naphthyl. In some embodiments, the at least one other monomer is polyacrylonitrile.

[0040] In some embodiments, the cyclic compound is part of a covalent organic framework. In some embodiments, the cyclic compound is furanic. In some embodiments, the covalent organic framework further includes at least one non-furanic compound. In some embodiments, the cyclic compound is methylfuran. In some embodiments, the at least one non-furanic compounds is triazine. In some embodiments, the cyclic compound is bifuran. In some embodiments, the at least one of thenon-furanic compounds is bis-imine. In some embodiments, the covalent organic framework is two-dimensional. In some embodiments, the covalent organic framework is three-dimensional.

[0041] In some embodiments, the cyclic compound is part of a metal organic framework. In some embodiments, the cyclic compound is furanic. In some embodiments, the metal organic framework is two-dimensional. In some embodiments, the metal organic framework is three-dimensional.

[0042] In some embodiments, the material further includes at least one filler. In some embodiments, the at least one filler undergoes a chemical change during pyrolysis. In some embodiments, the at least one filler is one of the following: a polymer, a poly-phenolic, a carbohydrate, a poly-aromatic, and organometallic, an organosilicon, an aromatic anhydride, or an aromatic imide. In some embodiments, the at least one filler is a, polyacrylnitrile, a polysilane, a polycarbosilane, a polysiloxane, or a polyimide. In some embodiments, the at least one filler is lignin or tannic acid. In some embodiments, the at least one filler is sucrose, a polysaccharide, a cellulose, or betacyclodextrin. In some embodiments, the at least one filler is a cycloparaphenylene, 1,5- dihydroxynahpthalene, or 4,4’-biphenol. In some embodiments, the at least one filler is tantalum(V) methoxide. In some embodiments, the at least one filler is tetraethyl orthosilicate. In some embodiments, the at least one filler does not undergo a chemical reaction during pyrolysis. In some embodiments, the at least one filler is carbon black, graphite nanoparticles, graphene, vitreous carbon, carbon nanotubes, a fullerene, tantalum nitride, tantalum carbide, tantalum silicide, or silicon nitride.

[0043] As shown in FIG. 28, certain aspects of this disclosure and their embodiments describe a method of creating a ceramic coating on a surface, such method including: applying a ceramic slurry paint to the surface, wherein the organic slurry paint comprises: an organic solvent; a cyclic compound; and ceramic microparticles 2800; drying the ceramic slurry paint on the surface below 100° C 2802; curing the ceramic slurry paint on the surface below 300° C 2804; and sintering the ceramic slurry paint on the surface above 1500° C 2806.

[0044] Slip casting is a ceramic forming technique used to create hollow or complex-shaped objects from a mixture, called slip. The process involves pouring the slip into a mold which absorbs the slip, leaving behind a solid layer that takes the shape of the mold. The excess slip is drained, and the object is removed from the mold for further processing.

[0045] An article created by slip casting in accordance with the present disclosure includes a slip comprising a cyclic compound and ceramic microparticles; wherein the slip is placed into a mold, the slip is cured in the mold, and the slip is sintered.

[0046] In some embodiments, the article is cured below 300° C. In some embodiments, the material is sintered above 1500° C.

[0047] In some embodiments, the cyclic compound is aliphatic. In some embodiments, the cyclic compound is aromatic. In some embodiments, the cyclic compound is an organosilicate, organophosphate, organoselenium, organoboron, organosulfate, or organometallic. In some embodiments, the cyclic compound is a furanic compound. In some embodiments, the furanic compound is one of: furan, a heterofuran, a furfural, a furanone, thiophene, pyrrole, or oxazole. In some embodiments, the cyclic compound is incorporated into a macrocycle.

[0048] In some embodiments, the cyclic compound becomes a monomer of a polymer after sintering. In some embodiments, the cyclic compound is part of the backbone of the polymer. In some embodiments, the cyclic compound is a side chain of the polymer. In some embodiments, the cyclic compound becomes a homopolymer after curing. In some embodiments, the homopolymer is an unconjugated homopolymer. In some embodiments, the homopolymer is a conjugated homopolymer. In some embodiments, the homopolymer is a furanic homopolymer. In some embodiments, the polymer has a furanic backbone. In some embodiments, the polymer has furanic side chains. In some embodiments, the polymer has non-furanic side chains. In some embodiments, the polymer has a non-furanic backbone. In some embodiments, the polymer has furanic side chains.

[0049] In some embodiments, the polymer is a star polymer.

[0050] In some embodiments, the cyclic compound is a copolymer with at least one other monomer. In some embodiments, the cyclic compound and the at least one other monomer form at least one of the following copolymers: a block copolymer, an alternating copolymer, a periodic copolymer, a statistical copolymer, or a star polymer. In some embodiments, the at least one other monomer is naphthyl. In some embodiments, the at least one other monomer is polyacrylonitrile.

[0051] In some embodiments, the cyclic compound is part of a covalent organic framework. In some embodiments, the cyclic compound is furanic. In some embodiments, the covalent organic framework further includes at least one non-furanic compound. In some embodiments, the cyclic compound is methylfuran. In some embodiments, the at least one non-furanic compounds is triazine. In some embodiments, the cyclic compound is bifuran. In some embodiments, the at least one of the non-furanic compounds is bis-imine. In some embodiments, the covalent organic framework is two-dimensional. In some embodiments, the covalent organic framework is three-dimensional.

[0052] In some embodiments, the cyclic compound is part of a metal organic framework. In some embodiments, the cyclic compound is furanic. In some embodiments, the metal organic framework is two-dimensional. In some embodiments, the metal organic framework is three-dimensional.

[0053] In some embodiments, the material further includes at least one filler. In some embodiments, the at least one filler undergoes a chemical change during sintering. In some embodiments, the at least one filler is one of the following: a polymer, a poly-phenolic, a carbohydrate, a poly-aromatic, and organometallic, an organosilicon, an aromatic anhydride, or an aromatic imide. In some embodiments, the at least one filler is a, polyacrylnitrile, a polysilane, a polycarbosilane, a polysiloxane, or a polyimide. In some embodiments, the at least one filler is lignin or tannic acid. In some embodiments, the at least one filler is sucrose, a polysaccharide, a cellulose, or betacyclodextrin. In some embodiments, the at least one filler is a cycloparaphenylene, 1,5- dihydroxynahpthalene, or 4,4’-biphenol. In some embodiments, the at least one filler is tantalum(V) methoxide. In some embodiments, the at least one filler is tetraethyl orthosilicate. In some embodiments, the at least one filler does not undergo a chemical reaction during sintering. In some embodiments, the at least one filler is carbon black, graphite nanoparticles, graphene, vitreous carbon, carbon nanotubes, a fullerene, tantalum nitride, tantalum carbide, tantalum silicide, or silicon nitride.

[0054] In some embodiments, the mold is made of polytetrafluoroethylene or melamine.

[0055] Creating an article by slip casting in accordance with the present disclosure includes placing a slip into a mold; curing the slip in the mold; sintering the slip; wherein the slip is comprised of a cyclic compound and ceramic microparticles.

[0056] In some embodiments, the article is cured below 300° C. In some embodiments, the material is sintered above 1500° C.

[0057] In some embodiments, the cyclic compound is aliphatic. In some embodiments, the cyclic compound is aromatic. In some embodiments, the cyclic compound is an organosilicate, organophosphate, organoselenium, organoboron, organosulfate, or organometallic. In some embodiments, the cyclic compound is a furanic compound. In some embodiments, the furanic compound is one of: furan, a heterofuran, a furfural, a furanone, thiophene, pyrrole, or oxazole. In some embodiments, the cyclic compound is incorporated into a macrocycle.

[0058] In some embodiments, the cyclic compound becomes a monomer of a polymer after sintering. In some embodiments, the cyclic compound is part of the backbone of the polymer. In some embodiments, the cyclic compound is a side chain of the polymer. In some embodiments, thecyclic compound becomes a homopolymer after curing. In some embodiments, the homopolymer is an unconjugated homopolymer. In some embodiments, the homopolymer is a conjugated homopolymer. In some embodiments, the homopolymer is a furanic homopolymer. In some embodiments, the polymer has a furanic backbone. In some embodiments, the polymer has furanic side chains. In some embodiments, the polymer has non-furanic side chains. In some embodiments, the polymer has a non-furanic backbone. In some embodiments, the polymer has furanic side chains.

[0059] In some embodiments, the polymer is a star polymer.

[0060] In some embodiments, the cyclic compound is a copolymer with at least one other monomer. In some embodiments, the cyclic compound and the at least one other monomer form at least one of the following copolymers: a block copolymer, an alternating copolymer, a periodic copolymer, a statistical copolymer, or a star polymer. In some embodiments, the at least one other monomer is naphthyl. In some embodiments, the at least one other monomer is polyacrylonitrile.

[0061] In some embodiments, the cyclic compound is part of a covalent organic framework. In some embodiments, the cyclic compound is furanic. In some embodiments, the covalent organic framework further includes at least one non-furanic compound. In some embodiments, the cyclic compound is methylfuran. In some embodiments, the at least one non-furanic compounds is triazine. In some embodiments, the cyclic compound is bifuran. In some embodiments, the at least one of the non-furanic compounds is bis-imine. In some embodiments, the covalent organic framework is two-dimensional. In some embodiments, the covalent organic framework is three-dimensional.

[0062] In some embodiments, the cyclic compound is part of a metal organic framework. In some embodiments, the cyclic compound is furanic. In some embodiments, the metal organic framework is two-dimensional. In some embodiments, the metal organic framework is three-dimensional.

[0063] In some embodiments, the material further includes at least one filler. In some embodiments, the at least one filler undergoes a chemical change during sintering. In some embodiments, the at least one filler is one of the following: a polymer, a poly-phenolic, a carbohydrate, a poly-aromatic, and organometallic, an organosilicon, an aromatic anhydride, or an aromatic imide. In some embodiments, the at least one filler is a, polyacrylnitrile, a polysilane, a polycarbosilane, a polysiloxane, or a polyimide. In some embodiments, the at least one filler is lignin or tannic acid. In some embodiments, the at least one filler is sucrose, a polysaccharide, a cellulose, or betacyclodextrin. In some embodiments, the at least one filler is a cycloparaphenylene, 1,5- dihydroxynahpthalene, or 4,4’-biphenol. In some embodiments, the at least one filler is tantalum(V)methoxide. In some embodiments, the at least one filler is tetraethyl orthosilicate. In some embodiments, the at least one filler does not undergo a chemical reaction during sintering. In some embodiments, the at least one filler is carbon black, graphite nanoparticles, graphene, vitreous carbon, carbon nanotubes, a fullerene, tantalum nitride, tantalum carbide, tantalum silicide, or silicon nitride.

[0064] In some embodiments, the mold is made of polytetrafluoroethylene or melamine.

[0065] As shown in FIG. 29, certain aspects of this disclosure and their embodiments describe a method of creating an article by slip casting, such method including: placing a slip into a mold 2900; curing the slip in the mold 2902; and sintering the slip, wherein the slip is comprised of a cyclic compound and ceramic microparticles 2904.

[0066] An article in accordance with the present disclosure may include graphite particles and a binder comprising a cyclic compound; wherein the article is cured and sintered.

[0067] In some embodiments, the article is formed by curing the graphite particles and binder in a mold. In some embodiments, the article is formed from a mixture comprising the graphite particles and the binder being mixed with an organic solvent, wherein a foam matrix is filled with the mixture. In some embodiments, the foam matrix is a melamine foam matrix.

[0068] In some embodiments, the article is cured below 300° C. In some embodiments, the material is sintered above 1500° C.

[0069] In some embodiments, the cyclic compound is aliphatic. In some embodiments, the cyclic compound is aromatic. In some embodiments, the cyclic compound is an organosilicate, organophosphate, organoselenium, organoboron, organosulfate, or organometallic. In some embodiments, the cyclic compound is a furanic compound. In some embodiments, the furanic compound is one of: furan, a heterofuran, a furfural, a furanone, thiophene, pyrrole, or oxazole. In some embodiments, the cyclic compound is incorporated into a macrocycle.

[0070] In some embodiments, the cyclic compound becomes a monomer of a polymer after sintering. In some embodiments, the cyclic compound is part of the backbone of the polymer. In some embodiments, the cyclic compound is a side chain of the polymer. In some embodiments, the cyclic compound becomes a homopolymer after curing. In some embodiments, the homopolymer is an unconjugated homopolymer. In some embodiments, the homopolymer is a conjugated homopolymer. In some embodiments, the homopolymer is a furanic homopolymer. In some embodiments, the polymer has a furanic backbone. In some embodiments, the polymer has furanicside chains. In some embodiments, the polymer has non-furanic side chains. In some embodiments, the polymer has a non-furanic backbone. In some embodiments, the polymer has furanic side chains.

[0071] In some embodiments, the polymer is a star polymer.

[0072] In some embodiments, the cyclic compound is a copolymer with at least one other monomer. In some embodiments, the cyclic compound and the at least one other monomer form at least one of the following copolymers: a block copolymer, an alternating copolymer, a periodic copolymer, a statistical copolymer, or a star polymer. In some embodiments, the at least one other monomer is naphthyl. In some embodiments, the at least one other monomer is polyacrylonitrile.

[0073] In some embodiments, the cyclic compound is part of a covalent organic framework. In some embodiments, the cyclic compound is furanic. In some embodiments, the covalent organic framework further includes at least one non-furanic compound. In some embodiments, the cyclic compound is methylfuran. In some embodiments, the at least one non-furanic compounds is triazine. In some embodiments, the cyclic compound is bifuran. In some embodiments, the at least one of the non-furanic compounds is bis-imine. In some embodiments, the covalent organic framework is two-dimensional. In some embodiments, the covalent organic framework is three-dimensional.

[0074] In some embodiments, the cyclic compound is part of a metal organic framework. In some embodiments, the cyclic compound is furanic. In some embodiments, the metal organic framework is two-dimensional. In some embodiments, the metal organic framework is three-dimensional.

[0075] In some embodiments, the material further includes at least one filler. In some embodiments, the at least one filler undergoes a chemical change during sintering. In some embodiments, the at least one filler is one of the following: a polymer, a poly-phenolic, a carbohydrate, a poly-aromatic, and organometallic, an organosilicon, an aromatic anhydride, or an aromatic imide. In some embodiments, the at least one filler is a, polyacrylnitrile, a polysilane, a polycarbosilane, a polysiloxane, or a polyimide. In some embodiments, the at least one filler is lignin or tannic acid. In some embodiments, the at least one filler is sucrose, a polysaccharide, a cellulose, or betacyclodextrin. In some embodiments, the at least one filler is a cycloparaphenylene, 1,5- dihydroxynahpthalene, or 4,4’-biphenol. In some embodiments, the at least one filler is tantalum(V) methoxide. In some embodiments, the at least one filler is tetraethyl orthosilicate. In some embodiments, the at least one filler does not undergo a chemical reaction during sintering. In some embodiments, the at least one filler is carbon black, graphite nanoparticles, graphene, vitreous carbon, carbon nanotubes, a fullerene, tantalum nitride, tantalum carbide, tantalum silicide, or silicon nitride.

[0076] Creating an article by casting in accordance with the present disclosure includes placing into a mold a mixture comprising graphite and a cyclic compound; curing the mixture in the mold; sintering the mixture.

[0077] In some embodiments, the article is cured below 300° C. In some embodiments, the material is sintered above 1500° C.

[0078] In some embodiments, the cyclic compound is aliphatic. In some embodiments, the cyclic compound is aromatic. In some embodiments, the cyclic compound is an organosilicate, organophosphate, organoselenium, organoboron, organosulfate, or organometallic. In some embodiments, the cyclic compound is a furanic compound. In some embodiments, the furanic compound is one of: furan, a heterofuran, a furfural, a furanone, thiophene, pyrrole, or oxazole. In some embodiments, the cyclic compound is incorporated into a macrocycle.

[0079] In some embodiments, the cyclic compound becomes a monomer of a polymer after sintering. In some embodiments, the cyclic compound is part of the backbone of the polymer. In some embodiments, the cyclic compound is a side chain of the polymer. In some embodiments, the cyclic compound becomes a homopolymer after curing. In some embodiments, the homopolymer is an unconjugated homopolymer. In some embodiments, the homopolymer is a conjugated homopolymer. In some embodiments, the homopolymer is a furanic homopolymer. In some embodiments, the polymer has a furanic backbone. In some embodiments, the polymer has furanic side chains. In some embodiments, the polymer has non-furanic side chains. In some embodiments, the polymer has a non-furanic backbone. In some embodiments, the polymer has furanic side chains.

[0080] In some embodiments, the polymer is a star polymer.

[0081] In some embodiments, the cyclic compound is a copolymer with at least one other monomer. In some embodiments, the cyclic compound and the at least one other monomer form at least one of the following copolymers: a block copolymer, an alternating copolymer, a periodic copolymer, a statistical copolymer, or a star polymer. In some embodiments, the at least one other monomer is naphthyl. In some embodiments, the at least one other monomer is polyacrylonitrile.

[0082] In some embodiments, the cyclic compound is part of a covalent organic framework. In some embodiments, the cyclic compound is furanic. In some embodiments, the covalent organic framework further includes at least one non-furanic compound. In some embodiments, the cyclic compound is methylfuran. In some embodiments, the at least one non-furanic compounds is triazine. In some embodiments, the cyclic compound is bifuran. In some embodiments, the at least one of thenon-furanic compounds is bis-imine. In some embodiments, the covalent organic framework is two-dimensional. In some embodiments, the covalent organic framework is three-dimensional.

[0083] In some embodiments, the cyclic compound is part of a metal organic framework. In some embodiments, the cyclic compound is furanic. In some embodiments, the metal organic framework is two-dimensional. In some embodiments, the metal organic framework is three-dimensional.

[0084] In some embodiments, the material further includes at least one filler. In some embodiments, the at least one filler undergoes a chemical change during sintering. In some embodiments, the at least one filler is one of the following: a polymer, a poly-phenolic, a carbohydrate, a poly-aromatic, and organometallic, an organosilicon, an aromatic anhydride, or an aromatic imide. In some embodiments, the at least one filler is a, polyacrylnitrile, a polysilane, a polycarbosilane, a polysiloxane, or a polyimide. In some embodiments, the at least one filler is lignin or tannic acid. In some embodiments, the at least one filler is sucrose, a polysaccharide, a cellulose, or betacyclodextrin. In some embodiments, the at least one filler is a cycloparaphenylene, 1,5- dihydroxynahpthalene, or 4,4’-biphenol. In some embodiments, the at least one filler is tantalum(V) methoxide. In some embodiments, the at least one filler is tetraethyl orthosilicate. In some embodiments, the at least one filler does not undergo a chemical reaction during sintering. In some embodiments, the at least one filler is carbon black, graphite nanoparticles, graphene, vitreous carbon, carbon nanotubes, a fullerene, tantalum nitride, tantalum carbide, tantalum silicide, or silicon nitride.

[0085] As shown in FIG. 30, certain aspects of this disclosure and their embodiments describe a method of creating an article by casting, such method including: placing into a mold a mixture comprising graphite and a cyclic compound 3000; curing the mixture in the mold 3002; and sintering the mixture 3004.

[0086] Creating an article by casting in accordance with the present disclosure may include creating a mixture comprising graphite, a cyclic compound, and an organic solvent; filling a foam matrix with the mixture; curing the mixture in foam matrix; sintering the mixture in the foam matrix.

[0087] In some embodiments, the foam matrix is a melamine foam matrix.

[0088] In some embodiments, the article is cured below 300° C. In some embodiments, the material is sintered above 1500° C.

[0089] In some embodiments, the cyclic compound is aliphatic. In some embodiments, the cyclic compound is aromatic. In some embodiments, the cyclic compound is an organosilicate, organophosphate, organoselenium, organoboron, organosulfate, or organometallic. In someembodiments, the cyclic compound is a furanic compound. In some embodiments, the furanic compound is one of: furan, a heterofuran, a furfural, a furanone, thiophene, pyrrole, or oxazole. In some embodiments, the cyclic compound is incorporated into a macrocycle.

[0090] In some embodiments, the cyclic compound becomes a monomer of a polymer after sintering. In some embodiments, the cyclic compound is part of the backbone of the polymer. In some embodiments, the cyclic compound is a side chain of the polymer. In some embodiments, the cyclic compound becomes a homopolymer after curing. In some embodiments, the homopolymer is an unconjugated homopolymer. In some embodiments, the homopolymer is a conjugated homopolymer. In some embodiments, the homopolymer is a furanic homopolymer. In some embodiments, the polymer has a furanic backbone. In some embodiments, the polymer has furanic side chains. In some embodiments, the polymer has non-furanic side chains. In some embodiments, the polymer has a non-furanic backbone. In some embodiments, the polymer has furanic side chains.

[0091] In some embodiments, the polymer is a star polymer.

[0092] In some embodiments, the cyclic compound is a copolymer with at least one other monomer. In some embodiments, the cyclic compound and the at least one other monomer form at least one of the following copolymers: a block copolymer, an alternating copolymer, a periodic copolymer, a statistical copolymer, or a star polymer. In some embodiments, the at least one other monomer is naphthyl. In some embodiments, the at least one other monomer is polyacrylonitrile.

[0093] In some embodiments, the cyclic compound is part of a covalent organic framework. In some embodiments, the cyclic compound is furanic. In some embodiments, the covalent organic framework further includes at least one non-furanic compound. In some embodiments, the cyclic compound is methylfuran. In some embodiments, the at least one non-furanic compounds is triazine. In some embodiments, the cyclic compound is bifuran. In some embodiments, the at least one of the non-furanic compounds is bis-imine. In some embodiments, the covalent organic framework is two-dimensional. In some embodiments, the covalent organic framework is three-dimensional.

[0094] In some embodiments, the cyclic compound is part of a metal organic framework. In some embodiments, the cyclic compound is furanic. In some embodiments, the metal organic framework is two-dimensional. In some embodiments, the metal organic framework is three-dimensional.

[0095] In some embodiments, the material further includes at least one filler. In some embodiments, the at least one filler undergoes a chemical change during sintering. In some embodiments, the at least one filler is one of the following: a polymer, a poly-phenolic, a carbohydrate,a poly-aromatic, and organometallic, an organosilicon, an aromatic anhydride, or an aromatic imide. In some embodiments, the at least one filler is a, polyacrylnitrile, a polysilane, a polycarbosilane, a polysiloxane, or a polyimide In some embodiments, the at least one filler is lignin or tannic acid. In some embodiments, the at least one filler is sucrose, a polysaccharide, a cellulose, or betacyclodextrin. In some embodiments, the at least one filler is a cycloparaphenylene, 1,5- dihydroxynahpthalene, or 4,4’-biphenol. In some embodiments, the at least one filler is tantalum(V) methoxide. In some embodiments, the at least one filler is tetraethyl orthosilicate. In some embodiments, the at least one filler does not undergo a chemical reaction during sintering. In some embodiments, the at least one filler is carbon black, graphite nanoparticles, graphene, vitreous carbon, carbon nanotubes, a fullerene, tantalum nitride, tantalum carbide, tantalum silicide, or silicon nitride.

[0096] As shown in FIG. 31, certain aspects of this disclosure and their embodiments describe a method of creating an article by casting, such method including: creating a mixture comprising graphite, a cyclic compound, and an organic solvent 3100; filling a foam matrix with the mixture 3102; curing the mixture in foam matrix 3104; and sintering the mixture in the foam matrix 3106.

[0097] Aspects of the present invention also relate to creating standalone parts which may be formed and sintered into a final ceramic shape. Processes in accordance with the present disclosure may be capable of creating coatings much thicker than existing processes, including on the order of hundreds of microns thick. Thicker layers of material may provide parts that are not only diffusion barriers, but enable such parts to be structural elements. Processes for creating standalone parts may in some aspects be similar to the processes of coating a surface or part with UHTA. Such UHTA being used as material for 3D printing, casting, or coating disposable substrates, or otherwise forming objects that become standalone parts upon heat treatment and / or further processing. For example, UHTA may be coated on a host material that will be removed through sublimation, evaporation, or a chemical process, leaving the UHTA structure as a self supported element. Such a self-supported element may be part of a PVT / CVT or CVD system. Parts made from such processes may be more porous than a solid metal.

[0098] In some aspects in accordance with the present disclosure, embodiments of a UHTA may enable various patterning / structuring processes. As some UHTAs may be a liquid first, next a thermoplast, and finally a bonded glassy carbon network, the thermoplastic phase may be manipulated. In some embodiments, the thermoplastic phase may be processed into various articles. In some embodiments, after polymerization via cycloaddition, some materials can be laser structured(e.g. via laser induced Retro-Diels-Alder reactions) before undergoing a pyrolysis step. In some embodiments, such processing may allow for self-healing of imperfections or structuring through a solvent treatment to remove laser exposed material. In some embodiments, after polymerization, the thermoplastic material may be patterned through stamping, imprinting, punching, or other methods prior to pyrolysis into bonded glassy carbon.

[0099] A method of creating an article in accordance with the present disclosure may include providing a material comprising a cyclical compound; curing the material below 300° C; processing the material to form the article after curing; pyrolyzing the material above 400° C.

[0100] In some embodiments, processing the material comprises laser structuring. In some embodiments, processing the material further comprises inducing retro-diels-alder reactions in the material. In some embodiments, processing the material further comprises of treating the material with a solvent. In some embodiments, processing the material comprises stamping the material to form the article. In some embodiments, processing the material comprises imprinting the material to form the article. In some embodiments, processing the material comprises punching the material to form the article.

[0101] An article in accordance with the present disclosure may include a material that comprises a cyclical compound, which is cured below 300° C; processed to form the article after curing; and pyrolyzed above 400° C.

[0102] In some embodiments, the process to form the article after curing comprises laser structuring. In some embodiments, the process to form the article after curing further comprises inducing retro-Diels-Alder reactions in the material. In some embodiments, the process to form the article after curing further comprises of treating the material with a solvent. In some embodiments, the process to form the article after curing comprises stamping the material to form the article. In some embodiments, the process to form the article after curing comprises imprinting the material to form the article. In some embodiments, the process to form the article after curing the material comprises punching the material to form the article.

[0103] In any of the simplified crystal growth systems with a baffle 2326 depicted in FIGS. 33A- 39 the baffle 2326 may provide vapor transport of a silicon carbide source vapor through a first portion of the baffle 2326 at a first rate. In some embodiments, the silicon carbide vapor may be transported through a second portion of the baffle 2326 (e.g., including one or more apertures), at a second rate. The first rate may be different than the second rate. For example, the baffle 2326 may provide anavenue for source vapor to diffuse through the material of the baffle 2326 at a first rate, while source vapor is transported through an aperture unimpeded by the material of the baffle 2326 at a second rate. In some embodiments, the baffle 2326 may be spaced apart from the seed holder 3302 and is not coupled to the seed holder 3302. In some embodiments, the baffle 2326 may impede or otherwise alter heat transfer or thermal energy within the crystal growth chamber in a crystal growth process.

[0104] In some embodiments, the baffle 2326 may be, at least partially, made of graphite. In some embodiments, the baffle 2326 made at least partially of graphite may include a coating on at least a portion of the graphite. In some embodiments, the coating on the baffle 2326 made of graphite may be a pyrolytic coating. In some embodiments, the coating on the baffle 2326 made of graphite may be tantalum carbide. In some embodiments, the coating on the baffle 2326 may hinder particulate matter larger than the source vapor from reaching a seed crystal 3304. The seed crystal 3304 may be a silicon carbide seed crystal. In some embodiments, the baffle 2326 may be porous graphite. Porous graphite may provide a less hindered pathway for source vapor to diffuse through.

[0105] In some embodiments, the baffle 2326 may be spaced apart from a seed holder 3302 and is not coupled to the seed holder 3302. In some embodiments, the baffle 2326 may be spaced apart from a source material 3308 and is not coupled to the source material 3308. The source material 3308 may be a silicon carbide vapor source material. In some embodiments, the baffle may be coupled to a side wall of a crucible 3306.

[0106] FIG. 33 A depicts a simplified view of a crystal growth system 3300 according to example aspects of the present disclosure. The crystal growth system 3300 includes the seed holder 3302 configured to hold the seed crystal 3304. The seed crystal 3304 may provide a growth surface for growth of the silicon carbide crystalline material in a crystal growth process. The crystal growth system 3300 includes the crucible 3306 defining a crystal growth chamber. The crystal growth system 3300 includes the source material 3308. The crystal growth system 3300 includes the baffle 2326 within the crystal growth chamber that is spaced apart from the source material 3308. In some embodiments, the baffle 2326 may extend between the inner walls of the crucible 3306, such that the crucible 3306 is bisected or divided into an upper portion 3303 and a lower portion 3305 by the baffle 2326. The upper portion 3303 and the lower portion 3305 may have the same or different volumes. In some examples, the baffle 2326 may be coupled to a side wall of the crucible 3306. In some examples, the baffle 2326 may not fully extend between the inner walls of the crucible 3306.

[0107] The baffle 2326 has a long dimension (e.g., width) W1 and a thickness Tl. The thickness T1 is in a general direction of vapor transport through the baffle 2326. In some embodiments, the long dimension W1 is in a direction that is non-perpendicular to the growth surface of the seed crystal 3304.

[0108] FIG. 33B depicts a simplified view of baffle 2326 according to some aspects of the present disclosure. As shown in FIG. 33B, baffle 2326 may include apertures, and may extend to the side walls of the crucible, or may not extend to the sidewalls of the crucible.

[0109] FIG. 33C depicts a simplified view of baffle 2326 according to some aspects of the present disclosure. As shown in FIG. 33C, baffle 2326 may include multiple baffle structures, which may be spaced apart from one another or may be in contact with one another.

[0110] FIGS. 34, 35, 36, 37, 38, and 39 depict simplified views of baffle 2326 according to some aspects of the present disclosure in the context of crystal growth systems 3400, 3500, 3600, 3700, 3800, and 3900. As shown in FIG. 34, in some embodiments of the present disclosure, baffle 2326 may include one or more baffle plates, in any orientation relative to the seed holder 3302 or the source material 3308. As shown in FIG. 35, in some embodiments of the present disclosure, baffle 2326 may include two or more baffle structures, whether of the same type or of differing types, and such baffle structures may be of differing orientations relative to each other.[oni] As shown in FIG. 36, in some embodiments of the present disclosure the crystal growth system 3600 includes a baffle, the seed holder 3302, the seed crystal 3304, the crucible 3306, and the source material 3308. An element of the baffle 2326 may be positioned such that the baffle 2326 extends around at least three sides of the seed crystal 3304, with the longest dimension located below the seed crystal 3304. The baffle 2326 may be referred to as a shell structure as it provides a shell around the seed crystal 3304. The baffle 2326 may be graphite, such as porous graphite. The baffle 2326 may include one or more apertures that assist in the transport of source vapor from the source material 3308 to the seed crystal 3304, or may not include any apertures. Baffle 2326 may also include additional elements, such as any of the exemplary baffles contemplated by the present disclosure, such as any of the baffles depicted in FIGS. 23A-26B or 32-35, and such additional elements may be situated between the source material 2308 and the seed crystal 2304.

[0112] As shown in FIG. 37, example crystal growth system 3700 includes a baffle 2326, a seed holder 3302, a seed crystal 3304, a crucible 3306, and the source material 3308. The baffle 2326 may include a tubular baffle structure. The seed crystal 3304 may be within the tubular baffle 2326. Thebaffle 2326 may be graphite, such as porous graphite. The baffle 2326 may include one or more apertures that assist in the transport of source vapor from the source material 3308 to the seed crystal 3304, or may not include any apertures. Baffle 2326 may also include additional elements, such as any of the exemplary baffles contemplated by the present disclosure, such as any of the baffles depicted in FIGS. 23A-26B or 32-35, and such additional elements may be situated between the source material 3308 and the seed crystal 3304.

[0113] As shown in FIG. 38 example crystal growth systems 3800 may be used to grow a plurality of silicon carbide boules according to example embodiments of the present disclosure. In FIG. 38, the crystal growth system 3800 includes a plurality of seed holders 3302 and seed crystals 3304 arranged in different crystal growth chambers. A baffle 2326 may separate the seed crystals 3304 from a source material 3308. As depicted in FIG. 38, the baffle 2326 may include one or more apertures to assist with vapor transport from the source material 3308 to the seed crystals 3304. The apertures may have a shape and / or arrangement as any of the apertures provided herein. In some embodiments, as depicted in FIG. 38, the crystal growth system 3800 may include one or more additional baffles elements in each chamber. The additional baffle elements 2326 may be arranged between the source material 3308 and the seed crystal 3304 in each chamber. Each of the one or more additional baffles elements 2326 may include any of the baffles contemplated by the present disclosure, such as any of the baffles depicted in FIGS. 23A-26B or 32-35.

[0114] FIG. 39 depicts example crystal growth systems 3900 according to example embodiments of the present disclosure. In FIG. 39, the crystal growth system 3900 includes a seed holder 3302 and a seed crystal 3304 arranged within a crucible 3306. The crucible 3306 may have one or more angled sidewalls. The crystal growth system 3900 includes a source material 3308. The baffle 2326 may be on top of the source material 3308 and may separate the source material 3308 from the reaction chamber defined by the crucible 3306. As depicted in FIG. 39, the baffle 2326 may include one or more apertures to assist with vapor transport from the source material 3308 to the seed crystal 3304. The apertures may have a shape and / or arrangement as any of the apertures provided herein. The system 3900 may further include additional baffle elements 2326. The second baffle may be in the transport path between the source material 3308 and the seed crystal 3304. The second baffle 2326 may include any of the baffles contemplated by the present disclosure, such as any of the baffles depicted in FIGS. 23A-26B or 32-35.

[0115] In any crystal growth system incorporating aspects of the present disclosure, including exemplary crystal growth systems shown herein, a baffle system may include single or multiple elements that may effect, alter, or provide a temperature gradient in a desired manner relative to the crystal growth surface. Such exemplary baffle systems may also effect, alter, or provide a vapor pressure gradient, vapor flux, or vapor flow. Such vapor pressure gradient, vapor flus, or vapor flow may be between any of the following: a SiC source, multiple SiC sources, one or more secondary Si or SiC sources, or one or more dopant sources. Such vapor pressure gradient, vapor flus, or vapor flow may be relative to the crystal growth surface, a side surface of the crystal, areas within the crystal growth system susceptible to parasitic growth, filtering structures, or other inclusions from the crystal. In some embodiments, different elements of the baffle system may provide different features. For example, a baffle system may include one or more elements that perform one or more of the following functions, which may be present in any combination: filtering; acting as a secondary source, for example a graphite element that provides a graphite source; effecting, altering, or providing a temperature gradient; effecting altering, or providing a vapor pressure gradient. In some embodiments, a baffle system may include one or more elements with apertures, pores, voids, cavities, indentations, and / or protrusions. In some embodiments, a baffle system may include one or more elements that may be coated in whole or in part with a carbide coating, including TaC. A baffle system may include one or more elements coated, or having portions coated, with a coating, or multiple coatings, or a patterned coating, for example, to achieve desired sublimation if acting as a secondary source or to reduce sublimation if not intended to serve as a secondary source. Individual baffles or elements in a baffle system can serve duplicate or different functions.

[0116] Aspects of the present disclosure may be used to create coatings on any surface within a crystal growth reactor or within any component within a reactor. For example, embodiments of the present disclosure may be used to create a coating on one or more surfaces of a crucible, an interior wall of a reactor, insulation, source retention elements, baffles, or any other structure shown or described herein, including a crucible, vessel, container, or part thereof, including a seed holder, lid, spacer ring, rod, liner, washer, shaft or porous barrier. In some embodiments, the crucible, vessel, container, or part thereof may be designed for use in the manufacture of silicon carbide wafers or boules. Such coatings according to certain aspects the present disclosure can be continuous, discontinuous, or patterned. Such films or coatings can be single coatings or part of a multi-coating layer. Coatings according to certain aspects of the present disclosure may be applied to one or moreelements within a crystal growth system, either in their entirety or having portions coated, either as a single coating or multiple coatings or a patterned coating, for example, to achieve desired sublimation if such elements act as a secondary source or to reduce sublimation if such elements are not intended to serve as a secondary source. Coatings according to aspects of the present disclosure may be applied to one or more elements within a crystal growth system as a controlled secondary source of SiC or carbon and / or to control the ratio of carbon and silicon in the vapor. Coatings according to aspects of the present disclosure may act as a catalytic surface to help reduce contaminants.

[0117] Graphite structures may be treated to reduce particle emission, as disclosed in U. S . Provisional Application Serial No. 63 / 700,630, filed on September 28, 2024, which is hereby incorporated by reference.

[0118] Further definitions and embodiments are discussed below.

[0119] In the above-description of various embodiments of present inventive concepts, it is to be understood that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of present inventive concepts. Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which present inventive concepts belong. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of this specification and the relevant art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.

[0120] As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. Well-known functions or constructions may not be described in detail for brevity and / or clarity. The term "and / or" (abbreviated “ / ”) includes any and all combinations of one or more of the associated listed items.

[0121] As used herein, the terms "comprise", "comprising", "comprises", "include", "including", "includes", "have", "has", "having", or variants thereof are open-ended, and include one or more stated features, integers, elements, steps, components or functions but does not preclude the presence or addition of one or more other features, integers, elements, steps, components, functions or groups thereof. Furthermore, as used herein, the common abbreviation "e.g.", which derives from the Latin phrase "exempli gratia," may be used to introduce or specify a general example or examples of a previously mentioned item, and is not intended to be limiting of such item. Thecommon abbreviation "i.e.", which derives from the Latin phrase "id est," may be used to specify a particular item from a more general recitation.

[0122] As used herein, “metal” may also include metalloids, including silicon, germanium, arsenic, antimony, tellurium, or polonium.

[0123] As used herein, the terms adhesive, bond, and coating are used interchangeably.

[0124] Example embodiments are described herein. Many variations and modifications can be made to the embodiments without substantially departing from the principles of the present inventive concepts. All such variations and modifications are intended to be included herein within the scope of present inventive concepts. Accordingly, the above disclosed subject matter is to be considered illustrative, and not restrictive, and the examples of embodiments are intended to cover all such modifications, enhancements, and other embodiments, which fall within the spirit and scope of present inventive concepts. Thus, to the maximum extent allowed by law, the scope of present inventive concepts are to be determined by the broadest permissible interpretation of the present disclosure including the examples of embodiments and their equivalents, and shall not be restricted or limited by the foregoing detailed description.

Claims

1. CLAIMS1. A material which comprises: a cyclic compound, wherein the material is cured at a first temperature; wherein the material is pyrolyzed at a second temperature higher than the first temperature; and wherein the material is adhesive at both the first temperature and the second temperature.

2. The material of claim 1, wherein the material is adhesive below 300° C.

3. The material of claim 1 wherein the material is adhesive above 1500° C and below 300° C to at least one of the following substrates: graphite, metal, glass, plastic, crystal, or ceramic.

4. The material of claim 2, wherein the pyrolysis of the material forms a glassy carbon.

5. The material of claim 4, wherein covalent bonds between the glassy carbon and a substrate are formed.

6. The material of claim 1, wherein the cyclic compound is aliphatic.

7. The material of claim 1, wherein the cyclic compound is aromatic.

8. The material of claim 1, wherein the cyclic compound is an organosilicate, organophosphate, organoselenium, organoboron, organosulfate, or organometallic.

9. The material of claim 1, wherein the cyclic compound is a furanic compound.

10. The material of claim 9, wherein the furanic compound is one of: furan, a heterofuran, a furfural, a furanone, thiophene, pyrrole, or oxazole.

11. The material of claim 1, wherein the cyclic compound is incorporated into a macrocycle.

12. The material of claim 1, wherein the cyclic compound becomes a monomer of a polymer after pyrolysis.

13. The material of claim 12, wherein the cyclic compound is part of the backbone of the polymer.

14. The material of claim 12, wherein the cyclic compound is a side chain of the polymer.

15. The material of claim 12, wherein the cyclic compound becomes a homopolymer after curing.

16. The material of claim 15, wherein the homopolymer is an unconjugated homopolymer.

17. The material of claim 15, wherein the homopolymer is a conjugated homopolymer.

18. The material of claim 15, wherein the homopolymer is a furanic homopolymer.

19. The material of claim 12, wherein the polymer has a furanic backbone.

20. The material of claim 19, wherein the polymer has furanic side chains.

21. The material of claim 19, wherein the polymer has non-furanic side chains.

22. The material of claim 12, wherein the polymer has a non-furanic backbone.

23. The material of claim 22, wherein the polymer has furanic side chains.

24. The material of claim 12, wherein the polymer is a star polymer.

25. The material of claim 12, wherein the cyclic compound is a copolymer with at least one other monomer.

26. The material of claim 25, wherein the cyclic compound and the at least one other monomer form at least one of the following copolymers: a block copolymer, an alternating copolymer, a periodic copolymer, a statistical copolymer, or a star polymer.

27. The material of claim 25, wherein the at least one other monomer is naphthyl.

28. The material of claim 25, wherein the at least one other monomer is polyacrylonitrile.

29. The material of claim 1, wherein the cyclic compound is part of a covalent organic framework.

30. The material of claim 29, wherein the cyclic compound is furanic.

31. The material of claim 30, wherein the covalent organic framework further includes at least one non-furanic compound.

32. The material of claim 31, wherein the cyclic compound is methylfuran.

33. The material of claim 31, wherein the at least one non-furanic compounds is triazine.

34. The material of claim 31, wherein the cyclic compound is bifuran.

35. The material of claim 31, wherein the at least one of the non-furanic compounds is bisimine.

36. The material of claim 29, wherein the covalent organic framework is two-dimensional.

37. The material of claim 29, wherein the covalent organic framework is three-dimensional.

38. The material of claim 1, wherein the cyclic compound is part of a metal organic framework.

39. The material of claim 38, wherein the cyclic compound is furanic.

40. The material of claim 38, wherein the metal organic framework is two-dimensional.

41. The material of claim 38, wherein the metal organic framework is three-dimensional.

42. The material of claim 1, further comprising at least one filler.

43. The material of claim 42, wherein the at least one filler undergoes a chemical change during pyrolysis.

44. The material of claim 43, wherein the at least one filler is one of the following: a polymer, a poly-phenolic, a carbohydrate, a poly-aromatic, and organometallic, an organosilicon, an aromatic anhydride, or an aromatic imide.

45. The material of claim 44, wherein the at least one filler is a, polyacrylnitrile, a polysilane, a polycarbosilane, a polysiloxane, or a polyimide.

46. The material of claim 44, wherein the at least one filler is lignin or tannic acid.

47. The material of claim 44, wherein the at least one filler is sucrose, a polysaccharide, a cellulose, or beta-cyclodextrin.

48. The material of claim 44, wherein the at least one filler is a cycloparaphenylene, 1,5- dihydroxynahpthalene, or 4,4 ’-biphenol.

49. The material of claim 44, wherein the at least one filler is tantalum(V) methoxide.

50. The material of claim 44, wherein the at least one filler is tetraethyl orthosilicate.

51. The material of claim 42, wherein the at least one filler does not undergo a chemical reaction during pyrolysis.

52. The material of claim 51, wherein the at least one filler is carbon black, graphite nanoparticles, graphene, vitreous carbon, carbon nanotubes, a fullerene, tantalum nitride, tantalum carbide, tantalum silicide, or silicon nitride.

53. A method of adhering a first component and a second component which comprises: applying a material comprising a cyclical compound to at least one of the first or second component; curing the material below 300° C; pyrolyzing the material above 400° C; wherein the material is adhesive above 1500° C.

54. The method of claim 53, wherein the first component is a seed holder.

55. The method of claim 53, wherein the second component is a crucible.

56. The method of claim 53, wherein the material is adhesive below 300° C.

57. The method of claim 53 wherein the material is adhesive above 1500° C and below 300° C to at least one of the following substrates: metal, glass, plastic, crystal, or ceramic.

58. A method of creating a coating on a surface which comprises: applying a paint to the surface, wherein the paint comprises: an organic solvent;a cyclic compound; and ceramic microparticles; drying the paint on the surface below 100° C; curing the paint on the surface below 300° C; and sintering the paint on the surface above 1500° C.

59. The method of claim 58, wherein the cyclic compound is aliphatic.

60. The method of claim 58, wherein the cyclic compound is aromatic.

61. The method of claim 58, wherein the cyclic compound is an organosilicate, organophosphate, organoselenium, organoboron, organosulfate, or organometallic.

62. The method of claim 58, wherein the cyclic compound is a furanic compound.

63. The method of claim 62, wherein the furanic compound is one of: furan, a heterofuran, a furfural, a furanone, thiophene, pyrrole, or oxazole.

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