Chemical mechanical planarization for advanced node high bandwidth memory device

Abstract

Present Chemical Mechanical Planarization (CMP) polishing compositions, methods and systems are used in multi-types of films polishing in advanced node high bandwidth memory (HBM) device fabrication process. The CMP polishing compositions comprise abrasives; amino acid or its salts or derivatives; peroxy type of oxidizing agents; optionally an azole compound; a surfactant; benzenesulfonic acid, its derivatives, its salts, or combinations thereof; and polyol to provide high and tunable remove rates in polishing multi-types of films, such as silicon oxide film, silicon nitride film, Cu film, and other relevant films from the patterned wafer surfaces in HBM devices.

Description

TITLE OF THE INVENTION: Chemical Mechanical Planarization For Advanced Node High Bandwidth Memory Device CROSS REFERENCE TO RELATED APPLICATIONS

[0001] The present application claims priority to U.S. provisional application no. 63 / 702,891 filed on October 3, 2024, the entire contents of which is incorporated herein by reference thereto for all allowable purposes. BACKGROUND OF THE INVENTION

[0002] This invention relates to chemical mechanical planarization (CMP) polishing compositions, CMP polishing methods and CMP polishing systems in semiconductor device fabrication process. In particular, the present invention relates to CMP polishing composition, CMP polishing methods and CMP polishing systems which can be used for polishing multi-types of films in advanced node High Bandwidth Memory (HBM) device.

[0003] In the fabrication of microelectronics devices to be used for advanced node High Bandwidth Memory applications, an important step involved is chemical mechanical planarization polishing to planarize the semiconductor wafer surface and / or the substrate structure. For example, during the fabrication of 3D stacked devices in advanced High Bandwidth Memory device, multi-types of films need to be removed / polished in high and tunable removal rates from patterned wafer surfaces through the CMP polishing process.

[0004] In some advanced node High Bandwidth Memory devices, a silicon nitride layer(commonly referred to as SiN layer) can be deposited over copper (Cu) vias, and then a silicon oxide layer (commonly referred to as oxide layer) can be deposited over the SiN layer. Then, both over-capped oxide layer and SiN layer need to be removed effectively through CMP process in order to allow the copper vias being planarized and effectively stacked in packed high density and advanced High Bandwidth Memory devices. Removing the capped oxide, SiN layers, andachieve global planarization of copper vias through CMP process demand well- designed CMP polishing compositions which are able to provide high and tunable removal rates while removing oxide, SiN, and Cu films from the patterned wafer surface.

[0005] There are work done in the art for polishing one or two kind of multi-types of films, such as the work disclosed in US 11,572,490, US 20,200,071,566, US6,616,514, US 6,984,588 and US 6,544,892.

[0006] However, the known arts do not address the CMP polishing process in advanced HBM device and the importance of removing all multi-types of films; such as silicon oxide film, SiN film, copper and other relevant films from the patterned wafer surface in sufficient high polishing removal rates. For example, the CMP polishing process in advanced HBM device need to have the removal rate for silicon oxide film to be ≥ 4000 A / min., the removal rate for SiN film to be ≥ 2000 Å / min., and the removal rate for Cu film to be ≥ 1300 A / min. or 1600 A / min. , preferably ≥ 2000 A / min.. respectively.

[0007] Therefore, it remains a need within the art for CMP polishing compositions methods and systems that can afford the high and tunable oxide film removal rates, the high and tunable SiN film removal rates and the high and tunable copper film removal rates in chemical and mechanical planarization process for the advanced node high bandwidth memory device. SUMMARY OF THE INVENTION

[0008] The present invention provides CMP polishing compositions, methods and systems that satisfy the needs for the high and tunable multi-types of films polishing in the planarization process for the advanced node High Bandwidth Memory device.

[0009] The present invention provides CMP polishing compositions having unique combinations of different components to offer high and tunable removal rates for polishing silicon oxide silicon nitride, and copper.

[0010] In one aspect, there is provided a chemical mechanical planarization polishing composition for High Bandwidth Memory device polishing process, comprising: abrasive particles; at least one amino acid or its derivatives;at least one peroxy compound; water-soluble solvent; optionally at least one of an azole compound; a surfactant; benzenesulfonic acid, its derivatives, its salts, or combinations thereof; at least one polyol; a biocide; and a pH adjuster.

[0011] In one embodiment, the abrasive particles used in the CMP compositions include, but are not limited to: silica based abrasives such as colloidal silica, high purity colloidal silica, silica particles doped by other inorganic oxide within lattice of the colloidal silica such as alumina doped silica particles; cerium oxide, colloidal cerium oxide; ceria-coated inorganic oxide particles; nano-sized inorganic oxide particles including alumina, titania, zirconia, ceria; nano-sized diamond particles; nano-sized silicon nitride particles; mono-modal, bi-modal, multi-modal colloidal abrasive particles; organic polymer-based soft abrasives; surface-coated or modified abrasives or other composite particles, and combinations thereof.

[0012] In another embodiment, the abrasive particles used are ceria-coated inorganic oxide particles include but are not limited to ceria-coated colloidal silica, ceria-coated high purity colloidal silica, ceria-coated alumina, ceria-coated titania, ceria-coated zirconia, or any other ceria-coated inorganic oxide particles. The preferred ceria-coated inorganic oxide particles are ceria-coated silica particles. The ceria-coated silica particles have silica particles as the core particles with nano- sized ceria particles being bounded to the surface of the core silica particles. The nano-sized ceria particles are smaller than the core silica particles. The ceria-coated silica particles can be made with any methods, for example, by the methods as disclosed in WO2016159167.

[0013] The abrasive particles may have various shapes including but are not limited to spherical, elongated, cocoon or chain like structures. Preferred particle shapes are sphere and cocoon. Cocoon shaped particles are characterized by aggregate ratio which is the ratio of mean particle size measured by Dynamic Light Scattering (DLS) to primary particle diameter calculated based on specific surface area assuming nonporous spherical particles. Preferred aggregate ratio of cocoon shaped particles is >1.7 or more preferably between 1.7 and 2.3.

[0014] The abrasive particles may have a particle size that is a mean particle size or a primary particle size ranging from 10 nm to 1,000 nm, from 20 nm to 500 nm, or from 50 nm to 250 nm. The particle size measured by Dynamic Light Scattering (DLS).

[0015] The CMP polishing composition may contain from 0.01 wt.% to 20 wt.%, from 0.01 wt.% to 10 wt.%, from 0.01 wt.% to 5 wt.%, or from 0.05 wt.% to 2.5 wt.% of abrasive particles. The weight % is relative to the total weight of the CMP composition.

[0016] The at least one amino acid or its derivatives used in the CMP polishing compositions include but are not limited to: glycine, maltitol, alanine, sarcosine, arginine, asparagine, aspartic acid, glutamic acid, glutamine, histidine, isoleucine, leucine, lysine, phenylalanine, proline, serine, threonine, tryptophan, tyrosine, and valine; their derivatives, and combinations thereof.

[0017] The CMP polishing composition may contain 0.0001 wt.% to 5.0% wt.%, 0.001 wt.% to 2.5 wt.%, or 0.0025 wt.% to 1.0 wt.% of the at least one amino acid or its derivatives.

[0018] The at least one peroxy compound used in the CMP polishing compositions include but are not limited to: ammonium persulfate, potassium persulfate, peroxy sulfonic acid, peroxy acetic acid, periodic acid, and hydrogen peroxide, and combinations thereof.

[0019] The CMP polishing composition may contain from 0.01 wt.% to 2.0 wt.%, the from 0.05 wt.% to 1.0 wt.%, or from 0.1 wt.% to 0.5 wt.% of at least one peroxy compound.

[0020] The CMP polishing composition may optionally comprise an azole compound which includes but is not limited to triazole compounds and their derivatives, such as 1,24-triazole, 5-methyl-benztriazole, 1,2,3-triazole, 3-amino- 1,2,4-triazole, and 3,5-diamino-1,2,4-triazole; benzotriazole and its derivatives; tolyltriazole and its derivatives; and tetrazole and its derivatives; and combinations thereof.

[0021] The CMP polishing composition may optionally contain from 0.001 wt.% to 0.5% wt.%, from 0.0025 wt.% to 0.25 wt.%, or from 0.01 wt.% to 0.1 wt.% of an azole compound.

[0022] The CMP polishing composition may optionally comprise a surfactant, such as an anionic organic sulfonate surfactant. Examples include but are not limited to an anionic organic sulfonate surfactant contains alkyl aromatic group and sodium salt of sulfonate groups.

[0023] The CMP polishing composition may contain from 0.001 to 1.0 wt.%, 0.0025 to.0.75 wt.%, or 0.003 to 0.5 wt.% of a surfactant.

[0024] The CMP polishing composition may optionally comprise benzenesulfonic acid, its derivatives, its salts, or combinations thereof which include but are not limited to a compound having at least one six-membered aromatic benzene ring with sulfonic acid, ammonium sulfonate, or potassium sulfonate or sodium sulfonate salt directly being bonded to the benzene ring. Examples are benzenesulfonic acid; ammonium salt of benzene sulfonate, sodium salt of benzene sulfonate, potassium salt of benzene sulfonate, or combinations thereof.

[0025] The CMP polishing composition may contain from 0.001 wt.% to 5.0% wt.%, 0.0025 wt.% to 2.5 wt.%, or 0.05 wt.% to 1.0 wt.% of the benzenesulfonic acid, its derivatives, its salts, or combinations thereof.

[0026] The CMP polishing composition may optionally comprise at least one polyol which includes but is not limited to: maltitol, lactitol, maltotritol, ribitol, D-sorbitol, mannitol, dulcitol, iditol, D-(-)-Fructose, sorbitan, sucrose, ribose, Inositol, glucose, D-arabinose, L-arabinose, D-mannose, L-mannose, meso-erythritol, beta-lactose, arabinose, and combinations thereof. The preferred chemical additives are maltitol, lactitol, maltotritol, D-sorbitol, mannitol, dulcitol, iditol, D- (-)-Fructose, sucrose, ribose, Inositol, glucose. D-(+)-mannose, beta-lactose, and combinations thereof. The more preferred chemical additives are maltitol, lactitol, maltotritol, D-sorbitol, mannitol, dulcitol, D-(-)-Fructose, beta-lactose, and combinations thereof. The preferred polyols are D-sorbitol, dulcitol, maltitol, lactitol, and combinations thereof.

[0027] The CMP polishing composition may contain from 0.001 wt.% to 5.0% wt.%, 0.0025 wt.% to 2.5 wt.%, or 0.05 wt.% to 1.0 wt.% of at least one polyol.

[0028] The CMP polishing composition may optionally comprise a biocide such as a biocide has active ingredients of 5-chloro-2-methyl-4-isothiazolin-3-one, 2-methyl- 4-isothiazolin-3-one, and combinations thereof.

[0029] Commercially available biocides are KathonTM, KathonTMCG / ICP II, BiobanTMfrom Dupont and Dow Chemical Co..

[0030] The CMP polishing composition may optionally contain from 0.0001 wt.% to 0.05 wt.%; from 0.0005 wt.% to 0.025 wt.%, or from 0.001 wt.% to 0.015 wt.% of a biocide.

[0031] The CMP polishing composition may optionally comprise a pH adjuster which includes but is not limited to (a) nitric acid, sulfuric acid, tartaric acid, succinic acid, citric acid, malic acid, malonic acid, various fatty acids, various polycarboxylic acids, and mixtures thereof to lower the pH; and (b) potassium hydroxide(KOH), sodium hydroxide, ammonia, tetraethylammonium hydroxide, ethylenediamine, piperazine, polyethyleneimine, modified polyethyleneimine, and mixtures thereof to raise the pH.

[0032] The pH of the CMP polishing composition can be from 2 to 12, 3 to 11, 4 to 10, 5 to 10, 6 to 10 or 7 to 10.

[0033] The CMP polishing composition a water-soluble solvent selected from the group consisting of deionized (DI) water, distilled water, and alcoholic organic solvents.

[0034] In another aspect, there is provided a method of chemical mechanical planarization polishing for High Bandwidth Memory(HBM) device; the method comprises the steps of: providing the High Bandwidth Memory device having at least one surface containing at least one first material and at least one second material; providing a polishing pad; providing the chemical mechanical polishing (CMP) composition disclosed above; contacting at least one surface of the High Bandwidth Memory device with the polishing pad and the chemical mechanical polishing composition; and polishing the at least one surface.

[0035] In yet another aspect, there is provided a system of a chemical mechanical planarization polishing for High Bandwidth Memory(HBM) device; comprising: the High Bandwidth Memory device having at least one surface containing at least one first material and at least one second material; the chemical mechanical planarization polishing composition disclosed above; and a polishing pad; wherein the at least one surface containing at least one first material and at least one second material is in contact with the chemical mechanical planarization polishing composition and the polishing pad.

[0036] Examples of the first material contained by the at least one surface of the High Bandwidth Memory device includes but is not limited to silicon oxide and silicon nitride. The silicon oxide films can be Chemical Vapor Deposition (CVD), Plasma Enhance Chemical Vapor Deposition (PECVD), High Density Plasma CVD Deposition (HDPCVD or HDP), or spin on oxide films; and the silicon nitride can be Plasma Enhanced Chemical vapor deposition (PECVD), or LPCVD SiN film.

[0037] Examples of the second material contained by the at least one surface of the High Bandwidth Memory device includes but is not limited Cu, Co, W and Ru.

[0038] In one of the embodiment, the removal rate for the first material needs to be 2000 Å / min. or 4000 A / min., the removal rate for second material needs to be 1300 A / min. or 1600 A / min., preferably 2000 A / min..

[0039] In another one of the embodiment, the removal rate for silicon oxide film needs to be 4000 A / min., the removal rate for SiN film needs to be 2000 Å / min., and the removal rate for Cu film needs to be 1300 A / min. or 1600 A / min., preferably 2000 A / min., respectively.

[0040] The disclosed chemical mechanical planarization (CMP) polishing compositions for the advanced node High Bandwidth Memory (HBM) device CMP applications have a unique combination of using ceria-coated inorganic oxide particles as abrasives and the suitable types of chemical additives and oxidizing agents which include oxide film removal rate boosting agents, SiN removal rate boosting agents, and copper removal rate boosting agents. DETAILED DESCRIPTION OF THE INVENTION

[0041] In the global planarization of patterned and advanced node high bandwidth memory (HBM) device structures, SiN film is deposited on the copper vias, and silicon oxide film (oxide film) is deposited on the top of SiN film. It is important to quickly removal the capped oxide and SiN films and also removal the top part of copper vias to achieve more uniform global planarization using the proper polishing compositions through CMP process. The CMP polishing compositions disclosed in the present invention meet the requirements by achieving high and tunable removal rates for polishing all three different films, such as oxide, SiN and copper needed for the advanced node high bandwidth memory (HBM) device fabrication process.

[0042] In one aspect, there is provided a chemical mechanical planarization polishing composition for High Bandwidth Memory device polishing process, comprising: abrasive particles; an amino acid or its derivatives; at least one peroxy compound; water-soluble solvent; optionally at least one of an azole compound; a surfactant; benzenesulfonic acid, its derivatives, its salts, or combinations thereof; at least one polyol; a biocide; and a pH adjuster.

[0043] In one embodiment, the abrasive particles used in the CMP compositions include, but are not limited to: silica based abrasives such as colloidal silica, high purity colloidal silica, silica particles doped by other inorganic oxide within lattice of the colloidal silica such as alumina doped silica particles; cerium oxide, colloidal cerium oxide; ceria-coated inorganic oxide particles; nano-sized inorganic oxide particles including alumina, titania, zirconia, ceria; nano-sized diamond particles; nano-sized silicon nitride particles; mono-modal, bi-modal, multi-modal colloidal abrasive particles; organic polymer-based soft abrasives; surface-coated or modified abrasives or other composite particles, and combinations thereof.

[0044] In another embodiment, the abrasive particles used are ceria-coated inorganic oxide particles include but are not limited to ceria-coated colloidal silica, ceria-coated high purity colloidal silica, ceria-coated alumina, ceria-coated titania, ceria-coated zirconia, or any other ceria-coated inorganic oxide particles. The preferred ceria-coated inorganic oxide particles are ceria-coated silica particles. The ceria-coated silica particles have silica particles as the core particles with nano- sized ceria particles being bounded to the surface of the core silica particles. The nano-sized ceria particles are smaller than the core silica particles. The ceria-coated silica particles can be made with any methods, for example the methods as disclosed in WO2016159167.

[0045] The abrasive particles may have various shapes including but are not limited to spherical, elongated, cocoon or chain like structures. Preferred particleshapes are and cocoon. Cocoon shaped particles are characterized by aggregate ratio which is the ratio of mean particle size measured by Dynamic Light Scattering (DLS) to primary particle diameter calculated based on specific surface area assuming nonporous spherical particles. Preferred aggregate ratio of cocoon shaped particles is >1.7 or more preferably between 1.7 and 2.3.

[0046] The abrasive particles may have a particle size that is a mean particle size or a primary particle size ranging from 10 nm to 1,000 nm, from 20 nm to 500 nm, or from 50 nm to 250 nm. The particle size measured by Dynamic Light Scattering (DLS).

[0047] The concentrations of abrasive particles relative to the total weight of the CMP composition range from 0.01 wt.% to 20 wt.%, from 0.01 wt.% to 10 wt.%, from 0.01 wt.% to 5 wt.%, or from 0.05 wt.% to 2.5 wt.%.

[0048] The at least one amino acid or its derivatives can be used in the CMP polishing compositions as copper removal rate booster. The amino acid or its derivatives reacts with the oxidized copper ions to form softer copper-complexing to allow removal of copper film quickly.

[0049] The at least one amino acid or its derivatives include but are not limited to: amino acids or their derivatives, such as glycine, alanine, sarcosine, arginine, asparagine, aspartic acid, glutamic acid, glutamine, histidine, isoleucine, leucine, lysine, phenylalanine, proline, serine, threonine, tryptophan, tyrosine, and valine; their derivatives, and combinations thereof.

[0050] The CMP polishing composition may contain 0.0001 wt.% to 5.0% wt.%, 0.001 wt.% to 2.5 wt.%, or 0.0025 wt.% to 1.0 wt.% of the at least one amino acid or its derivatives.

[0051] At point of use, at least one peroxy compound or a salt of peroxy compound can be used in the CMP polishing compositions as an oxidizing agent and SiN removal rate boosting agent.

[0052] The at least one peroxy compound or a salt of peroxy compound can quickly oxidize Cu metal film to form the various copper oxides.

[0053] The at least one peroxy compound used in the CMP polishing compositions include but are not limited to: ammonium persulfate, potassium persulfate, peroxy sulfonic acid, peroxy acetic acid, periodic acid, and hydrogen peroxide, and combinations thereof.

[0054] The CMP polishing composition may contain from 0.01 wt.% to 2.0 wt.%, the from 0.05 wt.% to 1.0 wt.%, or from 0.1 wt.% to 0.5 wt.% of at least one peroxy compound.

[0055] The CMP polishing composition may optionally comprise at least one azole compound and its derivatives as Cu vias corrosion inhibitor.

[0056] The preferred azole compound is triazole compound and its derivatives, such as 1,2,4-triazole, 5-methyl-benztriazole, 1,2,3-triazole, 3-amino-1,2,4-triazole, and 3,5-diamino-1,2,4-triazole; benzotriazole and its derivatives; tolyltriazole and its derivatives; and tetrazole and its derivatives; and combinations thereof. The azole compound an azole compound acts as Cu corrosion inhibitor to provide the Cu film surface passivation protection

[0057] The CMP polishing composition may optionally contain from 0.001 wt.% to 0.5% wt.%, from 0.0025 wt.% to 0.25 wt.%, or from 0.01 wt.% to 0.1 wt.% of an azole compound.

[0058] The CMP polishing composition may optionally comprise any type of surfactants (anionic, non-ionic, cationic, zwitterionic surfactants et al) or wetting agents which can reduce the surface contact angle of the polishing surfaces to provide better wettability and improved polishing performance.

[0059] The preferred surfactant includes but is not limited to an anionic organic sulfonate surfactant, such as an anionic organic sulfonate surfactant contains alkyl aromatic group and sodium salt of sulfonate groups. An example is DOWFAX™ anionic products.

[0060] The CMP polishing composition may contain from 0.001 to 1.0 wt.%, 0.002 to 0.75 wt.%, or 0.003 to 0.5 wt.% of a surfactant.

[0061] The CMP polishing composition may optionally comprise benzenesulfonic acid, its derivatives, its salts, or combinations thereof which include but are not limited to a compound having at least one six-membered aromatic benzene ring with sulfonic acid, ammonium sulfonate, or potassium sulfonate or sodium sulfonate salt directly being bonded to the benzene ring. Examples are benzenesulfonic acid, ammonium salt of benzene sulfonate, sodium salt of benzene sulfonate, potassium salt of benzene sulfonate, or combinations thereof.

[0062] The CMP polishing composition may contain from 0.001 wt.% to 5.0% wt.%, 0.0025 wt.% to 2.5 wt.%, or 0.05 wt.% to 1.0 wt.% of the benzenesulfonic acid, its derivatives, its salts, or combinations thereof.

[0063] The CMP polishing composition may optionally comprise at least one polyol which includes but is not not limited to: maltitol, lactitol, maltotritol, ribitol, D-sorbitol, mannitol, dulcitol, iditol, D-(-)-Fructose, sorbitan, sucrose, ribose, Inositol, glucose, D-arabinose, L-arabinose, D-mannose, L-mannose, meso-erythritol, beta-lactose, arabinose, and combinations thereof. The preferred chemical additives are maltitol, lactitol, maltotritol, D-sorbitol, mannitol, dulcitol, iditol, D- (-)-Fructose, sucrose, ribose, Inositol, glucose. D-(+)-mannose, beta-lactose, and combinations thereof. The more preferred chemical additives are maltitol, lactitol, maltotritol, D-sorbitol, mannitol, dulcitol, D-(-)-Fructose, beta-lactose, and combinations thereof. The preferred polyols are D-sorbitol, dulcitol, maltitol, lactitol, and combinations thereof.

[0064] The CMP polishing composition may contain from 0.001 wt.% to 5.0% wt.%, 0.0025 wt.% to 2.5 wt.%, or 0.05 wt.% to 1.0 wt.% of at least one polyol.

[0065] The CMP polishing composition may optionally comprise a biocide such as a biocide has active ingredients of 5-chloro-2-methyl-4-isothiazolin-3-one, 2-methyl- 4-isothiazolin-3-one, and combinations thereof.

[0066] Commercially available biocides are KathonTM, KathonTMCG / ICP II, BiobanTMfrom Dupont and Dow Chemical Co..

[0067] The CMP polishing composition may optionally contain from 0.0001 wt.% to 0.05 wt.%; from 0.0005 wt.% to 0.025 wt.%, or from 0.001 wt.% to 0.015 wt.% of a biocide.

[0068] The CMP polishing composition may optionally comprise a pH adjuster which includes but is not limited to (a) nitric acid, sulfuric acid, tartaric acid, succinic acid, citric acid, malic acid, malonic acid, various fatty acids, various polycarboxylic acids, and mixtures thereof to lower the pH; and (b) potassium hydroxide(KOH), sodium hydroxide, ammonia, tetraethylammonium hydroxide, ethylenediamine, piperazine, polyethyleneimine, modified polyethyleneimine, and mixtures thereof to raise the pH.

[0069] The pH of the CMP polishing composition can be from 2 to 12, 3 to 11, 4 to 10, 5 to 10, 6 to 10 or 7 to 10.

[0070] The CMP polishing composition a water-soluble solvent selected from the group consisting of deionized (DI) water, distilled water, and alcoholic organic solvents.

[0071] In another aspect, there is provided a method of chemical mechanical planarization polishing for High Bandwidth Memory(HBM) device; the method comprising the steps of: providing the High Bandwidth Memory device having at least one surface containing at least one first material and at least one second material; providing a polishing pad; providing the chemical mechanical polishing (CMP) composition disclosed above; contacting at least one surface of the High Bandwidth Memory device with the polishing pad and the chemical mechanical polishing composition; and polishing the at least one surface.

[0072] In yet another aspect, there is provided a system of a chemical mechanical planarization polishing for High Bandwidth Memory(HBM) device; comprising the High Bandwidth Memory device having at least one surface containing at least one first material and at least one second material; the chemical mechanical planarization polishing composition disclosed above; and a polishing pad; wherein the at least one surface containing at least one first material and at least one second material is in contact with the chemical mechanical planarization polishing composition and the polishing pad.

[0073] Examples of the first material contained by the at least one surface of the High Bandwidth Memory device includes but is not limited to silicon oxide and silicon nitride. The silicon oxide films can be Chemical vapor deposition (CVD), Plasma Enhance CVD (PECVD), High Density Plasma CVD Deposition (HDPCVD or HDP), or spin on oxide films; and the silicon nitride can be Plasma Enhanced Chemical vapor deposition (PECVD), or LPCVD SiN film.

[0074] Examples of the second material contained by the at least one surface of the High Bandwidth Memory device includes but is not limited Cu, Co, W, and Ru.

[0075] The polished oxide films can be Chemical Vapor Deposition (CVD), Plasma Enhance CVD (PECVD), High Density Plasma Deposition CVD(HDP), or spin on oxide films.

[0076] The SiN films can be PECVD (Plasma Enhance CVD) SiN, or LPCVD SiN film.

[0077] The removal rates of SiO2, SiN, and Cu are high and tunable.

[0078] In one of the embodiment, the removal rate for the first material needs to be 2000 Å / min. or 4000 A / min., the removal rate for second material needs to be 1300 A / min. or 1600 A / min., preferably 2000 A / min..

[0079] In another one of the embodiment, the removal rate for silicon oxide film needs to be 4000 A / min., the removal rate for SiN film needs to be 2000 Å / min., and the removal rate for Cu film needs to be 1300 A / min. or 1600 A / min., preferably 2000 A / min., respectively.

[0080] The following non-limiting examples are presented to further illustrate the present invention. EXAMPLES CMP Methodology

[0081] In the examples presented below, CMP experiments were run using the procedures and experimental conditions given below. GLOSSARY / COMPONENTS

[0082] Ceria-coated Silica were supplied by JGCC Inc. in Japan.: used as abrasive having a particle size of approximately 20 nanometers (nm) to 500 nanometers (nm).

[0083] All chemical additives of amino acids, benzenesulfonic acid, polyols, biocide, oxidizing agent such as ammonium persulfate and hydrogen peroxide which were supplied by Sigma-Aldrich, St. Louis, MO.

[0084] TEOS: tetraethyl orthosilicate

[0085] Polishing Pad: Politex, or and other pads were used during CMP, supplied by DuPont Electronics & Industrial.PARAMETERS General

[0086] Å or A: angstrom(s) – a unit of length

[0087] BP: back pressure, in psi units

[0088] CMP: chemical mechanical planarization

[0089] CS: carrier speed

[0090] DF: Down force: pressure applied during CMP, units psi

[0091] min: minute(s)

[0092] ml: milliliter(s)

[0093] mV: millivolt(s)

[0094] psi: pounds per square inch

[0095] PS: platen rotational speed of polishing tool, in rpm (revolution(s) per minute)

[0096] SF: composition flow, ml / min

[0097] Wt. %: weight percentage (of a listed component)

[0098] TEOS: SiO2film

[0099] HDP: high density plasma deposited TEOS

[0100] TEOS or HDP Removal Rates: Measured TEOS or HDP removal rate at a given down pressure. The down pressure of the CMP tool was 2.5 psi in the examples listed below.

[0101] SiN Removal Rates: Measured SiN removal rate at a given down pressure. The down pressure of the CMP tool was 2.5 psi in the examples listed below.

[0102] Cu Removal Rates: Measured SiN removal rate at a given down pressure. The down pressure of the CMP tool was 2.5 psi in the examples listed below. Metrology

[0103] Films were measured with a ResMap CDE, model 168, manufactured by Creative Design Engineering, Inc, 20565 Alves Dr., Cupertino, CA, 95014. The ResMap tool is a four-point probe sheet resistance tool. Forty-nine-point diameter scan at 5mm edge exclusion for film was taken.CMP Tool

[0104] The CMP tool that was used is a 200mm Mirra manufactured by Applied Materials, 3050 Boweres Avenue, Santa Clara, California, 95054. A Politex pad supplied by DuPont Electronics & Industrial, 451 Bellevue Rd., Newark, DE 19713 was used on platen 1 for blanket wafer studies.

[0105] The Politex pad was broken in by conditioning the pad for 18 mins. At 7 lbs. down force on the conditioner. To qualify the tool settings and the pad break-in two tungsten monitors and two TEOS monitors were polished with Versum® STI2305 composition, supplied by Versum Materials Inc. at baseline conditions. Wafers

[0106] Polishing experiments were conducted using PECVD or LECVD or HDP TEOS wafers, PECVD SiN wafers, and electroless plating Cu wafers. These blanket wafers were purchased from Silicon Valley Microelectronics, 2985 Kifer Rd., Santa Clara, CA 95051. Polishing Experiments

[0107] In blanket wafer studies, oxide blanket wafers, SiN blanket wafers, and Cu wafers were polished at baseline conditions. The tool baseline conditions were: table speed; 113 rpm, head speed: 107 rpm, membrane pressure; 2.5 psi DF, slurry flow rate: 200 ml / min. Example 1

[0108] Reference sample (Ref. ) was made with 2.5 wt.% ceria-coated silica, a biocide ranging from 0.0001 wt.% to 0.05 wt.%, and deionized water with pH adjusted to 9.5 by using ammonium hydroxide

[0109] Sample 1 was made with 2.5 wt.% ceria-coated silica, 0.035 wt.% benzenesulfonic acid, a biocide ranging from 0.0001 wt.% to 0.05 wt.%, and deionized water with pH adjusted to 9.5 by using ammonium hydroxide

[0110] Sample 2 was made with 2.5 wt.% ceria-coated silica, 0.035 wt.% benzenesulfonic acid, 0.10 wt.% ammonium persulfate, a biocide ranging from 0.0001 wt.% to 0.05 wt.%, and deionized water with pH adjusted to 9.5 by using ammonium hydroxide.

[0111] Sample 3 was made with 2.5 wt.% ceria-coated silica, 0.035 wt.% benzenesulfonic acid, 0.10 wt.% glycine, 0.10 wt.% maltitol, a biocide ranging from 0.0001 wt.% to 0.05 wt.%, and deionized water with pH adjusted to 9.5 by using ammonium hydroxide.

[0112] Sample 4 was made with 2.5 wt.% ceria-coated silica, 0.035 wt.% benzenesulfonic acid, 0.10 wt.% glycine, 0.10 wt.% maltitol, 0.10 wt.% ammonium persulfate, a biocide ranging from 0.0001 wt.% to 0.05 wt.%, and deionized water with pH adjusted to 9.5.

[0113] The removal rates (RR at Å / min) for different films were evaluated. The results of the film removal rates were listed in Table 1. Table 1. RR (Å / min.) on different films Compositions TEOS RR ( / min) SiN RR ( / min) Cu RR ( / min)

[0114] As the results shown in Table 1, the SiN and Cu film removal rates got boosted using the Sample 4: Sample 4 maintained the high oxide removal rates, but provided about 224% higher SiN removal rate, and 482% higher Cu removal rates comparing to the Ref.

[0115] Please note that the working example offered > 4000 Å / min., > 2000 Å / min., and >2000 Å / min. removal rates for TEOS, SiN and Cu, respectively. Example 2

[0116] In Example 2, the effects of oxidizing agent ammonium persulfate concentrations on the various film polishing removal rates in a CMP polishing composition without the use of an amino acid or its derivatives and polyols were evaluated.

[0117] Reference sample (Ref.) was made using 2.5 wt.% ceria-coated silica, 0.035 wt.% benzenesulfonic acid, a biocide ranging from 0.0001 wt.% to 0.05 wt.%, and deionized water with pH adjusted to 9.5 by using ammonium hydroxide.

[0118] Sample 1 was made using 2.5 wt.% ceria-coated silica, 0.035 wt.% benzenesulfonic acid, 0.10 wt.% ammonium persulfate, a biocide ranging from 0.0001 wt.% to 0.05 wt.%, and deionized water with pH adjusted to 9.5 by using ammonium hydroxide.

[0119] Sample 2 was made using 2.5 wt.% ceria-coated silica, 0.035 wt.% benzenesulfonic acid, 0.25 wt.% ammonium persulfate, a biocide ranging from 0.0001 wt.% to 0.05 wt.%, and deionized water with pH adjusted to 9.5 by using ammonium hydroxide.

[0120] Sample 3 was made using 2.5 wt.% ceria-coated silica, 0.035 wt.% benzenesulfonic acid, 0.45 wt.% ammonium persulfate, a biocide ranging from 0.0001 wt.% to 0.05 wt.%, and deionized water with pH adjusted to 9.5 by using ammonium hydroxide.

[0121] The effects of the concentrations of oxidizing agent ammonium persulfate on the removal rates (RR at Å / min) for different films were evaluated. The results of the film removal rate vs different concentrations of ammonium persulfate (APS) were listed in Table 2. Table 2. Effects of Oxidizing Agent Concentration on Film RR ( / min.)Compositions TEOS RR ( / min.) SiN RR ( / min) Cu RR ( / min)little changes to the oxide and Cu film removal rates . However, the increased concentration 0.25 and 0.45 wt.% ammonium persulfate boosted Cu removal rates without using an amino acid or its derivatives. When 0.45 wt.% ammonium persulfate was used, the Cu removal rate was increased by about 118%.

[0123] The SiN removal rate was boosted as a result of using ammonium persulfate at all different concentrations.

[0124] The testing results shown in Table 2 indicated that both SiN and Cu film removal rates can be increased by using the salt of peroxy compounds as oxidizing agent in the polishing compositions.Example 3

[0125] In Example 3, the effects of peroxy compound ammonium persulfate concentrations on the various film polishing removal rates in working CMP polishing compositions were evaluated.

[0126] The reference sample (Ref.) was made using 2.5 wt.% ceria-coated silica, 0.035 wt.% benzenesulfonic acid, 0.10 wt.% glycine, 0.10 wt.% maltitol, a biocide ranging from 0.0001 wt.% to 0.05 wt.%, and deionized water with pH adjusted to 9.5 using ammonium hydroxide.

[0127] Sample # 1 was made using 2.5 wt.% ceria-coated silica, 0.035 wt.% benzenesulfonic acid, 0.10 wt.% glycine, 0.10 wt.% maltitol, 0.10 wt.% ammonium persulfate (APS), a biocide ranging from 0.0001 wt.% to 0.05 wt.%, and deionized water with pH adjusted to 9.5.

[0128] Sample # 2 was made using 2.5 wt.% ceria-coated silica, 0.035 wt.% benzenesulfonic acid, 0.10 wt.% glycine, 0.10 wt.% maltitol, 0.25 wt.% ammonium persulfate, a biocide ranging from 0.0001 wt.% to 0.05 wt.%, and deionized water with pH adjusted to 9.5.

[0129] The effects of the concentrations of peroxy compound ammonium persulfate(APS) on the removal rates (RR at Å / min) for different films were evaluated. The results were shown in Table 3. Table 3. Effects of Oxidizing Agent Concentrations on Film RR ( / min.)Compositions TEOS RR ( / min.) SiN RR ( / min) Cu RR ( / min)SiN and Cu film removal rates were relatively low.

[0131] Cu film removal rates were increased significantly and continued increased as the concentrations of ammonium persulfate were increased. When 0.25 wt.% ammonium persulfate was used and 0.1 wt.% glycine was used, the Cu removal rate was increased by about 370%.

[0132] SiN removal rates were increased at both concentrations of ammonium persulfate.

[0133] The testing results shown in Table 3 concluded that both SiN and Cu film removal rates can be boosted through using the salt of peroxy compounds as oxidizing agent.

[0134] Please note that the working examples again offered > 4000 Å / min., > 2000 Å / min., and >2000 Å / min. removal rates for TEOS, SiN and Cu, respectively. Example 4

[0135] In Example 4, the effects of alternative and commonly used hydrogen peroxide (H2O2) was also evaluated in the polishing compositions with the use of an amino acid, such as glycine at different concentrations, on the various film polishing removal rates.

[0136] The Reference sample (Ref.) was made using 2.5 wt.% ceria-coated silica, 0.035 wt.% benzenesulfonic acid, 0.10 wt.% glycine, 0.10 wt.% maltitol, a biocide ranging from 0.0001 wt.% to 0.05 wt.%, and deionized water with pH adjusted to 9.5 using ammonium hydroxide.

[0137] The working sample # 1 was made by adding 0.05 wt.% hydrogen peroxide to the ref.

[0138] The working sample # 2 was made by reducing glycine in Working #1 from to 0.10 wt. % to 0.05 wt.% ,

[0139] The results of the film removal rates were listed in Table 4. Table 4. Effects of Glycine Concentrations on Film RR ( / min.) withSame Concentration Oxidizing Agent Compositions TEOS RR ( / min.) SiN RR ( / min) Cu RR ( / min)fsame concentration in Working samples #1 and #2, SiN removal rates wereincreased by about the same 20%; Cu removal rates was increased by 241% and 62% respectively; and the oxide removal rates were decreased by 25% and 21 %, respectively. Thus, hydrogen peroxide performed same function as ammonium persulfate. Example 5

[0141] In Example 5, a Cu corrosion inhibitor, 1,2,4-triaozle for Cu vias corrosion inhibition was used in the CMP polishing composition.

[0142] The reference sample (Ref.) was made using 2.5 wt.% ceria-coated silica, 0.035 wt.% benzenesulfonic acid, 0.05 wt.% glycine, 0.10 wt.% maltitol, 0.05 wt.% H2O2, a biocide ranging from 0.0001 wt.% to 0.05 wt.%, and deionized water with pH adjusted to 9.5 by using ammonium hydroxide.

[0143] The working sample # 1 was made by adding 0.01 wt.% 1,2,4-triazole into the Ref.

[0144] The working sample # 2 was made by adding 0.03 wt.% 1,2,4-triazole into the Ref.

[0145] The effects of the concentrations of Cu corrosion inhibitor 1,2,4-triazole on the removal rates (RR at Å / min) for different films were evaluated. The results were listed in Table 5. Table 5. Effects of 1,2,4-Triazole Concentrations on Film RR ( / min.)Compositions TEOS RR ( / min.) SiN RR ( / min) Cu RR ( / min)0.01 and 0.03 wt.% in the CMP polishing composition, there were minor changes on both Cu and SiN removal rates, but oxide removal rate was increased about 6% and 9%, respectively.

[0147] When Cu corrosion inhibitor is used at 0.03 wt.% in the CMP polishing composition, there was a decrease of the Cu removal rate reduction which indicates that the corrosion inhibitor 1,2,4-triazole at a high enough concentration provided the Cu film surface passivation protection.Example 6

[0148] In Example 6, the chemical mechanical planarization polishing compositions for High Bandwidth Memory device were evaluated at different pH conditions.

[0149] The testing sample was made using 2.5 wt.% ceria-coated silica, 0.035 wt.% benzenesulfonic acid, 0.1 wt.% glycine, 0.01 wt.% 1,2,4-triazole, 0.2 wt.% periodic acid, a biocide ranging from 0.0001 wt.% to 0.05 wt.%, and deionized water with pH adjusted to 6.5, 7.5, and 8.5 respectively by using ammonium hydroxide.

[0150] The effects of the pH conditions on the removal rates (RR at Å / min) for different films were evaluated. The results were listed in Table 6. Table 6. Effects of pH Condition on Film RR ( / min.)pH TEOS RR (Å / min.) SiN (Å / min.) Cu (Å / min.)en pH increased from weak acidic condition toward more alkaline pH condition. The oxide film removal rates were fluctuated little at pH 6.5 and pH 7.5 conditions, then, decreased at pH 8.5. The copper film removal rates reduced but remained quite high at all three tested pH conditions, Example 7

[0152] In Example 7, two azole compounds, 1,2,4-triaozle and 5-methyl- benztriazole (5-MBTA) were used as dual corrosion inhibitors in the CMP polishing composition.

[0153] The reference sample (Ref.) was made using 5.0 wt.% ceria-coated silica, 0.035 wt.% benzenesulfonic acid, 0.2 wt.% glycine, 0.01 wt.% 1,2,4-triazole,0.2 wt.% periodic acid (PIA), a biocide ranging from 0.0001 wt.% to 0.05 wt.%, and deionized water with pH adjusted to 8.5 by using ammonium hydroxide.

[0154] The working sample # 1 was made by adding 0.01 wt.% 5-MBTA into the Ref.

[0155] The working sample # 2 was made by adding 0.03 wt.% 5-MBTA into the Ref.

[0156] The working sample # 3 was made by adding 0.05 wt.% 5-MBTA into the Ref.

[0157] The effects of the concentrations of the second azole compound 5-MBTA on the removal rates (RR at Å / min) for different films were evaluated. The results were listed in Table 7. Table 7 Effects of 5-MBTA Concentrations on Film RR ( / min.)Compositions TEOS RR ( / min.) SiN RR ( / min) Cu RR ( / min), MBTA was used at 0.01 (1X), 0.03 wt.% and 0.05 wt.% respectively in the CMP polishing composition. The significantly suppressed Cu removal rate was observed when 5-MBTA were used at 0.03 wt.% or 0.05 wt.% respectively while the TEOS and SiN removal rates were much less suppressed. Example 8

[0159] In Example 8, the CMP polishing compositions with various concentrations of ceria-coated silica abrasives were evaluated.

[0160] The testing samples were made by adding 2.5 wt.%, 3.5 wt.%, 4.0 wt.% or 5.0 wt.% ceria-coated silica respectively into a reference sample having 0.035 wt.% benzenesulfonic acid, 0.2 wt.% glycine, 0.03 wt.% 1,2,4-triazole, 0.05 wt.% 5- MBTA, 0.2 wt.% periodic acid, a biocide ranging from 0.0001 wt.% to 0.05 wt.%, and deionized water with pH adjusted to 8.5 by using ammonium hydroxide.

[0161] The effects of the ceria-coated silica abrasives on the removal rates (RR at Å / min) for different films were shown in Table 8. Table 8. Effects of Abrasive Conc. on Film RR ( / min.)

[0162] As the results shown in Table 8, both TEOS and SiN removal rates were increased as the abrasive concentrations increased. Cu removal rates were kept at the same except slight increase at 5.0 wt.% abrasive concentration. Example 9

[0163] In Example 9, the CMP polishing compositions with various concentrations 0.15 wt.%, 0.175 wt.%, or 0.20 wt.% periodic acid (PIA) respectively of periodic acid (PIA) as oxidizing agent were evaluated.

[0164] The testing samples were further comprised 2.5 wt.% ceria-coated silica, 0.0175 wt.% benzenesulfonic acid, 0.1 wt.% glycine, 0.015 wt.% 1,2,4-triazole, 0.025 wt.% 5-MBTA, a biocide ranging from 0.0001 wt.% to 0.05 wt.%, and deionized water with pH adjusted to 8.5 by using ammonium hydroxide.

[0165] The effects of the oxidizing agent periodic acid on the removal rates (RR at Å / min) for different films were listed in Table 9. Table 9. Effects of Abrasive Conc. on Film RR ( / min.)PIA% TEOS RR (Å / min.) SiN (Å / min.) Cu (Å / min.)

[0166] As the results shown in Table 9, both TEOS and SiN removal rates were reduced while Cu removal rate was increased when periodic concentration increased. Example 10

[0167] In Example 10, the CMP polishing composition having Dowfax™ C6L as a surfactant was evaluated.

[0168] The reference sample (Ref.) used 5 wt.% ceria-coated silica, 0.035 wt.% benzenesulfonic acid, 0.2 wt. % Glycine, 0.03 wt.% 1,2,4 Triazole, 0.05 wt.% 5- MBTA, 0.2 wt.% periodic acid, a biocide ranging from 0.0001 wt.% to 0.05 wt.%, and deionized water with pH adjusted to 8.5 by using ammonium hydroxide.

[0169] The working sample was obtained by adding 0.05 wt.%(500 ppm) Dowfax™ C6L into the Ref.. Table 10 Effects of surfactant on Film RR ( / min.)TEOS RR SiN RR Cu RR Compositions [00s s own n a e , e a on o ow ax sur ac an re uced the TEOS RR, but did little to the removal rates for SiN and Cu. Example 11

[0171] The surface contact angle for the polishing composition on a film surface (such as the surfaces to be polished in current application) is a key indicator to show if the polishing composition is able to wet the film surface effectively. The lower contact angles generally indicate better slurry wettability and improved polishing performance, In Example 11, the reduction of the surface contact angle on a film surface using a surfactant indicates the effective film surface wetting by using the surfactant.

[0172] Various types of surfactants were evaluated in improving film surface wetting.

[0173] The reference sample (Ref.) for surface contact angle measurement used 5 wt.% ceria-coated silica, 0.035 wt.% benzenesulfonic acid, 0.2 wt. % Glycine, 0.03 wt.% 1,2,4 triazole, 0.05 wt.% 5-MBTA, 0.2 wt.% periodic acid, a biocide ranging from 0.0001 wt.% to 0.05 wt.%, and deionized water with pH adjusted to 8.5 by using ammonium hydroxide.

[0174] Testing samples were made with adding different surfactants into the Ref. as shown in Table 11.

[0175] The surface contact angles were measured on TEOS, SiN, and Cu films and listed in Table 11. Table 11 Surface Contact Angle Results TEOS SiN Cu

[0176] As the results shown in Tabe 11, Dowfax™ 6CL surfactant having different concentrations all provided reduced film surface contact angle on three different films. The use of 1000 ppm polyacrylic acid with molecular weight 70K did not show that much improved wetting on the surfaces for all three tested films.

[0177] The present invention disclosed CMP polishing compositions to meet the need in advanced node High Bandwidth Memory device polishing process. The compositions comprise abrasive particles, preferably ceria-coated inorganic oxide abrasives; peroxy type of oxidizing agents, such as ammonium persulfate, periodic acid, or hydrogen peroxide to oxidize the copper metal film to form the various copper oxides; an amino acid or its derivatives such as glycine or alanine to react with the oxidized copper ions to form more soft copper complexes to allow removal of copper film; optionally an azole compound as Cu corrosion inhibitor to provide the Cu film surface passivation protection; optionally a surfactant to reduce the surface contact angle of the polishing surfaces to provide better wettability and improved polishing performance.; optionally benzenesulfonic acid, its derivatives, its salts or combinations to boost the oxide film removal rate; and optionally polyols such as maltitol to tune oxide to SiN removal selectivity.

[0178] The embodiments of this invention listed above, including the working example, are exemplary of numerous embodiments that may be made of this invention. It is contemplated that numerous other configurations of the process may be used, and the materials used in the process may be elected from numerous materials other than those specifically disclosed.

Claims

CLAIMS 1. A chemical mechanical planarization polishing composition for High Bandwidth Memory(HBM) device polishing process comprising: abrasive particles; at least one amino acid or its derivatives; at least one peroxy compound; water-soluble solvent selected from the group consisting of deionized (DI) water, distilled water, and alcoholic organic solvents; optionally at least one of an azole compound; a surfactant; benzenesulfonic acid, its derivatives, its salts, or combinations thereof; at least one polyol; a biocide; and a pH adjuster.

2. The chemical mechanical planarization polishing composition according to claim 1, wherein the abrasive particles are selected from the group consisting of silica based abrasives selected from the group consisting of colloidal silica, silica particles doped by other inorganic oxide within lattice of the colloidal silica; cerium oxide; colloidal cerium oxide; ceria-coated inorganic oxide particles; alumina; titania; zirconia; nano-sized diamond particles; nano-sized silicon nitride particles; organic polymer-based soft abrasives; and combinations thereof.

3. The chemical mechanical planarization polishing composition according to any one of claims 1 to 2, wherein the abrasive particles are the ceria-coated inorganic oxide particles selected from the group consisting of ceria-coated silica, ceria- coated alumina, ceria-coated titania, ceria-coated zirconia particles and combinations thereof.

4. The chemical mechanical planarization polishing composition according to any one of claims 1 to 3, wherein the abrasive particles are the ceria-coated silica.

5. The chemical mechanical planarization polishing composition according to any one of claims 1 to 4, wherein the abrasive particles have a mean particle size or aprimary particle size ranging from 10 nm to 1,000 nm, from 20 nm to 500 nm, or from 50 nm to 250 nm.

6. The chemical mechanical planarization polishing composition according to any one of claims 1 to 5, wherein the chemical mechanical planarization polishing composition comprises from 0.01 wt.% to 20 wt.%, from 0.01 wt.% to 10 wt.%, from 0.01 wt.% to 5 wt.%, or from 0.05 wt.% to 2.5 wt.% of the abrasive particles.

7. The chemical mechanical planarization polishing composition according to any one of claims 1 to 6, wherein the at least one amino acid or its derivatives is selected from the group consisting of glycine, alanine, sarcosine, arginine, asparagine, aspartic acid, glutamic acid, glutamine, histidine, isoleucine, leucine, lysine, phenylalanine, proline, serine, threonine, tryptophan, tyrosine, valine, and combinations thereof.

8. The chemical mechanical planarization polishing composition according to any one of claims 1 to 7, wherein the at least one amino acid or its derivatives is selected from the group consisting of glycine, alanine, and combinations thereof.

9. The chemical mechanical planarization polishing composition according to any one of claims 1 to 8, wherein the chemical mechanical planarization polishing composition comprises from 0.0001 wt.% to 5.0% wt.%, 0.001 wt.% to 2.5 wt.%, or 0.0025 wt.% to 1.0 wt.% of the at least amino acid or its derivatives.

10. The chemical mechanical planarization polishing composition according to any one of claims 1 to 9, wherein the at least one peroxy compound is selected from the group consisting of ammonium persulfate, potassium persulfate, peroxy sulfonic acid, peroxy acetic acid, periodic acid, hydrogen peroxide, and combinations thereof.

11. The chemical mechanical planarization polishing composition according to any one of claims 1 to 10, wherein the at least one peroxy compound is selected from the group consisting of ammonium persulfate, hydrogen peroxide, periodic acid, and combinations thereof.

12. The chemical mechanical planarization polishing composition according to any one of claims 1 to 11, wherein the chemical mechanical planarization polishingcomposition comprises from 0.01 wt.% to 2.0 wt.%, the from 0.05 wt.% to 1.0 wt.%, or from 0.1 wt.% to 0.5 wt.% of the at least one peroxy compound.

13. The chemical mechanical planarization polishing composition according to any one of claims 1 to 12, wherein the chemical mechanical planarization polishing composition comprises an azole compound selected from the group consisting of triazole compound and its derivatives selected from the group consisting of 1,24- triazole and its derivatives, 5-methyl-benztriazole and its derivatives, 1,2,3- triazole and its derivatives, 3-amino-1,2,4-triazole and its derivatives, 3,5- diamino-1,2,4-triazole and its derivatives, benzotriazole and its derivatives, tolyltriazole and its derivatives; tetrazole and its derivatives; and combinations thereof.

14. The chemical mechanical planarization polishing composition according to any one of claims 1 to 13, wherein optionally the chemical mechanical planarization polishing composition comprises from 0.001 wt.% to 0.5% wt.%, from 0.0025 wt.% to 0.25 wt.%, or from 0.01 wt.% to 0.1 wt.% of an azole compound.

15. The chemical mechanical planarization polishing composition according to any one of claims 1 to 14, wherein the chemical mechanical planarization polishing composition comprises an anionic organic sulfonate surfactant containing alkyl aromatic group and sodium salt of sulfonate groups.

16. The chemical mechanical planarization polishing composition of claim according to any one of claims 1 to 15, wherein the CMP polishing composition optionally comprises 0.001 to 1.0 wt.%, 0.002 to 0.75 wt.%, or 0.003 to 0.5 wt.% of a surfactant.

17. The chemical mechanical planarization polishing composition according to any one of claims 1 to 16, wherein the chemical mechanical planarization polishing composition comprises benzotriazole and its derivatives.

18. The chemical mechanical planarization polishing composition according to any one of claims 1 to 17, wherein the chemical mechanical planarization polishing composition comprises the benzenesulfonic acid, its derivatives, its salts, or combinations thereof; wherein the benzenesulfonic acid, its derivatives, its salts, or combinations thereof is a compound having at least one six-memberedaromatic benzene ring with sulfonic acid sulfonic acid; ammonium sulfonate, potassium sulfonate or sodium sulfonate salt directly being bonded to the benzene ring.

19. The chemical mechanical planarization polishing composition according to any one of claims 1 to 18, wherein the chemical mechanical planarization polishing composition comprises benzenesulfonic acid, ammonium salt of benzene sulfonate, sodium salt of benzene sulfonate, potassium salt of benzene sulfonate, or combinations thereof.

20. The chemical mechanical planarization polishing composition according to any one of claims 1 to 19, wherein the chemical mechanical planarization polishing composition comprises benzenesulfonic acid.

21. The chemical mechanical planarization polishing composition according to any one of claims 1 to 20, the chemical mechanical planarization polishing composition optionally comprises from 0.001 wt.% to 5.0% wt.%, 0.0025 wt.% to 2.5 wt.%, or 0.05 wt.% to 1.0 wt.% of the benzenesulfonic acid, its derivatives, its salts, or combinations thereof.

22. The chemical mechanical planarization polishing composition according to any one of claims 1 to 21, wherein the chemical mechanical planarization polishing composition comprises at least one polyol selected from the group consisting of maltitol, lactitol, maltotritol, ribitol, D-sorbitol, mannitol, dulcitol, iditol, D-(-)- Fructose, sorbitan, sucrose, ribose, Inositol, glucose, D-arabinose, L-arabinose, D-mannose, L-mannose, meso-erythritol, beta-lactose, arabinose, and combinations thereof. The preferred chemical additives are maltitol, lactitol, maltotritol, D-sorbitol, mannitol, dulcitol, iditol, D- (-)-Fructose, sucrose, ribose, Inositol, glucose. D-(+)-mannose, beta-lactose, and combinations thereof.

23. The chemical mechanical planarization polishing composition according to any one of claims 1 to 22, wherein the chemical mechanical planarization polishing composition comprises at least one polyol selected from the group consisting of D-sorbitol, dulcitol, maltitol, lactitol, and combinations thereof.

24. The chemical mechanical planarization polishing composition according to any one of claims 1 to 23, wherein the chemical mechanical planarization polishingcomposition optionally comprises from 0.001 wt.% to 5.0% wt.%, 0.0025 wt.% to 2.5 wt.%, or 0.05 wt.% to 1.0 wt.% of at least one polyol.

25. The chemical mechanical planarization polishing composition according to any one of claims 1 to 24, wherein the chemical mechanical planarization polishing composition comprises a biocide which has an active ingredient of 5-chloro-2- methyl-4-isothiazolin-3-one, 2-methyl-4-isothiazolin-3-one, or combinations thereof.

26. The chemical mechanical planarization polishing composition according to any one of claims 1 to 25, wherein the chemical mechanical planarization polishing composition comprises from 0.0001 wt.% to 0.05 wt.%; from 0.0005 wt.% to 0.025 wt.%, or from 0.001 wt.% to 0.015 wt.% of a biocide.

27. The chemical mechanical planarization polishing composition according to any one of claims 1 to 26, wherein the chemical mechanical planarization polishing composition comprises a pH adjuster selected from the group consisting of (a)nitric acid, sulfuric acid, tartaric acid, succinic acid, citric acid, malic acid, malonic acid, various fatty acids, various polycarboxylic acids, and mixtures thereof to lower the pH; and (b) potassium hydroxide(KOH), sodium hydroxide, ammonia, tetraethylammonium hydroxide, ethylenediamine, piperazine, polyethyleneimine, modified polyethyleneimine, and mixtures thereof to raise the pH.

28. The chemical mechanical planarization polishing composition according to any one of claims 1 to 27, wherein the chemical mechanical planarization polishing composition has a pH of from 2 to 12, 3 to 11, 4 to 10, 5 to 10, 6 to 10 or 7 to 10.

29. The chemical mechanical planarization polishing composition according to any one of claims 1 to 28, wherein the chemical mechanical planarization polishing composition comprises ceria-coated inorganic oxide particles; glycine, alanine, or combinations thereof; ammonium persulfate, periodic acid, or hydrogen peroxide; and the chemical mechanical planarization polishing composition has a pH of from 5 to 10, 6 to 10 or 7 to 10.

30. The chemical mechanical planarization polishing composition according to any one of claims 1 to 29, wherein the chemical mechanical planarization polishing composition comprises ceria-coated inorganic oxide particles; glycine, alanine, or combinations thereof; ammonium persulfate, periodic acid, or hydrogen peroxide; 1,2,4-triaozle, 5-methyl-benztriazole (5-MBTA), or combinations thereof; and the chemical mechanical planarization polishing composition has a pH of from 5 to 10, 6 to 10 or 7 to 10.

31. The chemical mechanical planarization polishing composition according to any one of claims 1 to 29, wherein the chemical mechanical planarization polishing composition comprises ceria-coated inorganic oxide particles; glycine, alanine, or combinations thereof; ammonium persulfate, periodic acid, or hydrogen peroxide; a surfactant containing alkyl aromatic group and sodium salt of sulfonate groups; and the chemical mechanical planarization polishing composition has a pH of from 5 to 10, 6 to 10 or 7 to 10.

32. The chemical mechanical planarization polishing composition according to any one of claims 1 to 31, wherein the chemical mechanical planarization polishing composition comprises ceria-coated inorganic oxide particles; glycine, alanine, or combinations thereof; ammonium persulfate, periodic acid, or hydrogen peroxide; 1,2,4-triaozle, 5-methyl-benztriazole (5-MBTA), or combinations thereof; a surfactant containing alkyl aromatic group and sodium salt of sulfonate groups; and the chemical mechanical planarization polishing composition has a pH of from 5 to 10, 6 to 10 or 7 to 10.

33. The chemical mechanical planarization polishing composition according to any one of claims 1 to 29, wherein the chemical mechanical planarization polishing composition comprises ceria-coated silica particles; glycine, alanine, or combinations thereof; ammonium persulfate, periodic acid, or hydrogen peroxide; benzenesulfonic acid, its salts, its derivatives or combinations thereof; and the chemical mechanical planarization polishing composition has a pH of from 5 to 10, 6 to 10 or 7 to 10.

34. The chemical mechanical planarization polishing composition according to any one of claims 1 to 29, wherein the chemical mechanical planarization polishingcomposition comprises ceria-coated silica particles; glycine, alanine, or combinations thereof; ammonium persulfate, periodic acid, or hydrogen peroxide; D-sorbitol, maltitol, lactitol, or combinations thereof; and the chemical mechanical planarization polishing composition has a pH of from 5 to 10, 6 to 10 or 7 to 10.

35. The chemical mechanical planarization polishing composition according to any one of claims 1 to 34, wherein the chemical mechanical planarization polishing composition comprises ceria-coated silica particles; glycine, alanine, or combinations thereof; ammonium persulfate, periodic acid, or hydrogen peroxide; benzenesulfonic acid, its salts, its derivatives or combinations thereof; D-sorbitol, maltitol, lactitol, or combinations thereof; and the chemical mechanical planarization polishing composition has a pH of from 5 to 10, 6 to 10 or 7 to 10.

36. The chemical mechanical planarization polishing composition according to any one of claims 1 to 35, wherein the chemical mechanical planarization polishing composition comprises ceria-coated silica particles; glycine, alanine, or combinations thereof; ammonium persulfate, periodic acid, or hydrogen peroxide; 1,2,4-triaozle, 5-methyl-benztriazole (5-MBTA), or combinations thereof; a surfactant containing alkyl aromatic group and sodium salt of sulfonate groups; benzenesulfonic acid, its salts, its derivatives or combinations thereof; thereof; and the chemical mechanical planarization polishing composition has a pH of from 5 to 10, 6 to 10 or 7 to 10.

37. The chemical mechanical planarization polishing composition according to any one of claims 1 to 36, wherein the chemical mechanical planarization polishing composition comprises ceria-coated silica particles; glycine, alanine, or combinations thereof; ammonium persulfate, hydrogen peroxide, or combinations thereof; 1,2,4-triaozle, 5-methyl-benztriazole (5-MBTA), or combinations thereof; a surfactant containing alkyl aromatic group and sodium salt of sulfonate groups; benzenesulfonic acid, its salts, its derivatives or combinations thereof; D-sorbitol, maltitol, lactitol, or combinations thereof; and the chemical mechanical planarization polishing composition has a pH of from 5 to 10, 6 to 10 or 7 to 10.

38. A method of chemical mechanical polarization polishing a High Bandwidth Memory device, the method comprises steps of:providing the high bandwidth memory device having at least one surface containing at least one first material and at least one second material; providing a polishing pad; providing the chemical mechanical polishing (CMP) composition according to any one of claims 1 to 37; contacting at least one surface of the high bandwidth memory device with the polishing pad and the chemical mechanical polishing composition; and polishing the at least one surface.

39. The method of chemical mechanical polarization polishing according to claim 38, wherein the at least one first material comprises silicon oxide film and silicon nitride film; and the at least one second material is selected from the group consisting of Cu, Co, W, Ru, and combinations thereof.

40. The method of chemical mechanical polarization polishing according to any one of claims 38 to 39, wherein the at least one first material comprises silicon oxide film and silicon nitride film; and the at least one second material is Cu.

41. The method of chemical mechanical polarization polishing according to any one of claims 38 to 40, wherein the at least one first material comprises silicon oxide film and silicon nitride film; and the silicon oxide film is deposited by Chemical Vapor Deposition (CVD), Plasma Enhance Chemical Vapor Deposition (PECVD), High Density Plasma Chemical vapor deposition (HDPCVD or HDP), or spin on; and the silicon nitride film is deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD), or Low pressure Chemical Vapor Deposition (LPCVD).

42. The method of chemical mechanical polarization polishing according to any one of claims 38 to 41, wherein removal rate of the first material is > 2000 / min., or >4000 / min.; and removal rate of the second material is > 1300 A / min. 1600 A / min., or >2000 / min., respectively 43. The method of chemical mechanical polarization polishing according to any one of claims 38 to 42, wherein the at least one first material comprises silicon oxide film and silicon nitride film and the at least one second material is Cu; andremoval rate of silicon oxide is > 4000 / min., silicon nitride is > 2000 / min.,and Cu > 1600 A / min. or >2000 / min., respectively.

44. A system of chemical mechanical polarization polishing a High Bandwidth Memory device having at least one surface containing at least one first material and at least one second material; the chemical mechanical planarization polishing composition according to any one of claims 1 to 37; and a polishing pad; wherein the at least one surface containing at least one first material and at least one second material is in contact with the chemical mechanical planarization polishing composition and the polishing pad.

45. The system of chemical mechanical polarization polishing according to claim 44, wherein the at least one first material comprises silicon oxide film and silicon nitride film; and the at least one second material is selected from the group consisting of Cu, Co, W, Ru, and combinations thereof.

46. The system of chemical mechanical polarization polishing according to any one of claims 44 to 45, wherein the at least one first material comprises silicon oxide film and silicon nitride film; and the at least one second material is Cu.

47. The system of chemical mechanical polarization polishing according to any one of claims 44 to 46, wherein the at least one first material comprises silicon oxide film and silicon nitride film; and the silicon oxide film is deposited by Chemical Vapor Deposition (CVD), Plasma Enhance Chemical Vapor Deposition (PECVD), High Density Plasma Chemical vapor deposition (HDPCVD or HDP), or spin on; and the silicon nitride film is deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD), or Low pressure Chemical Vapor Deposition (LPCVD).

48. The system of chemical mechanical polarization polishing according to any one of claims 44 to 47, wherein removal rate of the first material is > 2000 / min., or >4000 / min.; and removal rate of the second material is > 1300 A / min., >1600 A / min., or >2000 / min., respectively49. The system of chemical mechanical polarization polishing according to any one of claims 44 to 48, wherein the at least one first material comprises silicon oxide film and silicon nitride film and the at least one second material is Cu; and removal rates for silicon oxide, silicon nitride and copper are > 4000 / min.; > 2000 / min.; and 1300 A / min., > 1600 / min., or >2000 / min., respectively.

50. The system of chemical mechanical polarization polishing according to any one of claims 44 to 49, wherein the at least one first material comprises silicon oxide film and silicon nitride film and the at least one second material is Cu; and removal rates of silicon oxide, silicon nitride and copper are > 4000 / min., > 2000 / min.,and > 1600 / min. or >2000 / min., respectively.

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