MEMS microphone

Abstract

A MEMS microphone according to one embodiment of the present invention comprises: a substrate; a MEMS structure disposed on the substrate; a signal processing element disposed on the substrate and processing a signal of the MEMS structure; a first passive element unit patterned on the substrate and electrically connected to a MEMS connection terminal of the signal processing element; and a second passive element unit connected in parallel with the first passive element unit, wherein the MEMS connection terminal of the signal processing element is electrically connected to the MEMS structure.

Description

MEMS microphone

[0001] The present invention relates to a MEMS microphone.

[0002] Generally, audio devices generate sound by vibrating a diaphragm using electrodes, and significant advancements are being made in the field of audio equipment alongside recent technological developments. The applications of these devices are becoming increasingly diverse, such as in portable terminals and hearing aids; furthermore, as the devices in which they are applied become slimmer, the size of the audio devices themselves is also becoming smaller.

[0003] In addition, microphones utilizing MEMS (Micro Electro Mechanical Systems), a semiconductor technology, have recently been developed and are in use. MEMS is a technology that enables the fabrication of small mechanical components on the surface of silicon wafers. These MEMS microphones can be classified into electrostatic and piezoelectric types, and include general capacitor types.

[0004] MEMS microphones are used in environments such as wireless earphones (TWS, True Wireless Stereo) and smartphones, and are affected by RF noise from inside or outside the device. High-frequency noise generated during switching operations inside the device degrades the performance of MEMS microphones. A structure is required to mitigate the effects of such noise.

[0005] The technical problem that the present invention aims to solve is to provide a MEMS microphone having a noise reduction structure.

[0006] To solve the above technical problem, a MEMS microphone according to one embodiment of the present invention comprises: a substrate; a MEMS structure disposed on the substrate; a signal processing element disposed on the substrate and processing a signal of the MEMS structure; a first passive element part patterned on the substrate and electrically connected to a MEMS connection terminal of the signal processing element; and a second passive element part connected in parallel with the first passive element part, wherein the MEMS connection terminal of the signal processing element is electrically connected to the MEMS structure.

[0007] In addition, the first passive component may be connected by a wire to the MEMS structure and the MEMS connection terminal of the signal processing element, respectively.

[0008] Additionally, the second passive component may include a second passive component that is embedded within the substrate and connected in parallel with the first passive component.

[0009] Additionally, the second passive element may include a second passive element that is disposed on the substrate and connected in parallel with the second passive element.

[0010] In addition, the second passive element may include a second-1 passive element disposed on the substrate.

[0011] In addition, the first passive component may include a pattern inductor.

[0012] In addition, the first passive element can be patterned in at least one shape among a spiral, a meander, and a helical.

[0013] In addition, the substrate may include at least one of a printed circuit board (PCB), a flexible printed circuit board (FPCB), and a Chip on Film (COF) substrate.

[0014] In addition, the first passive component part may be connected to the second passive component part through a wire or via.

[0015] In addition, the first passive component part can be connected in parallel with an external third passive component part.

[0016] According to embodiments of the present invention, high-frequency noise caused by the switching operation of a signal processing element can be reduced.

[0017] FIG. 1 is a block diagram of a MEMS microphone according to one embodiment of the present invention.

[0018] FIG. 2 illustrates an embodiment of a MEMS microphone according to an embodiment of the present invention.

[0019] FIGS. 3 to 17 are drawings for explaining a MEMS microphone according to an embodiment of the present invention.

[0020] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the attached drawings.

[0021] However, the technical concept of the present invention is not limited to some of the described embodiments but can be implemented in various different forms, and within the scope of the technical concept of the present invention, one or more of the components among the embodiments may be selectively combined or substituted.

[0022] In addition, terms used in the embodiments of the present invention (including technical and scientific terms) may be interpreted in a sense that is generally understood by those skilled in the art to which the present invention belongs, unless explicitly and specifically defined otherwise. Terms that are commonly used, such as terms defined in advance, may be interpreted in consideration of their meaning in the context of the relevant technology.

[0023] Furthermore, the terms used in the embodiments of the present invention are for the purpose of describing the embodiments and are not intended to limit the present invention.

[0024] In this specification, the singular form may include the plural form unless specifically stated otherwise in the text, and when described as "at least one of A and B and C (or more than one)," it may include one or more of all combinations that can be formed from A, B, and C.

[0025] In addition, terms such as first, second, A, B, (a), (b), etc., may be used when describing the components of the embodiments of the present invention. These terms are used merely to distinguish the components from other components and are not intended to limit the essence, order, or sequence of the components.

[0026] And, where it is stated that a component is 'connected', 'combined', or 'connected' to another component, this may include not only cases where the component is directly 'connected', 'combined', or 'connected' to the other component, but also cases where it is 'connected', 'combined', or 'connected' due to another component located between the component and the other component.

[0027] Furthermore, when described as being formed or placed "above" or "below" each component, "above" or "below" includes not only cases where two components are in direct contact with each other, but also cases where one or more other components are formed or placed between the two components. Additionally, when expressed as "above" or "below," it may include the meaning of a downward direction as well as an upward direction relative to a single component.

[0028] Variations according to the present embodiment may include some components of each embodiment and some components of other embodiments. That is, a variation may include one of the various embodiments, but with some components omitted and some components of a corresponding other embodiment included. Or, the opposite may be true. Features, structures, effects, etc. described in the embodiments are included in at least one embodiment and are not necessarily limited to only one embodiment. Furthermore, features, structures, effects, etc. exemplified in each embodiment may be combined or modified and implemented in other embodiments by a person skilled in the art to which the embodiments belong. Therefore, details regarding such combinations and modifications should be interpreted as being included within the scope of the embodiments.

[0029] FIG. 1 is a block diagram of a MEMS microphone according to an embodiment of the present invention. FIG. 2 illustrates an embodiment of a MEMS microphone according to an embodiment of the present invention, and FIG. 3 to 17 are drawings for explaining a MEMS microphone according to an embodiment of the present invention.

[0030] A MEMS microphone (100) according to an embodiment of the present invention may be composed of a substrate (110), a MEMS structure (130), a signal processing element (120), a first passive element part (111), and a second passive element part (112).

[0031] The substrate (110) is placed at the bottom of the MEMS microphone (100) and has a plate shape. The substrate (110) may be a printed circuit board (PCB), a flexible printed circuit board (FPCB), or a Chip on Film (COF) substrate. A Chip on Film (COF) substrate is a substrate formed by forming a circuit on a base film or mounting a component such as a chip, and has a film shape, making it a substrate with a thickness that is significantly thinner than other substrates. By using a COF substrate as the substrate for the MEMS microphone, the thickness can be significantly reduced. The substrate (110) is a COF substrate and may be a 2-metal COF substrate. A 2-metal COF is a substrate formed by forming a circuit or mounting a component on both sides of a base film. By including via holes in the base film, circuits or components formed on both sides can be connected. Here, the via holes may be micro via holes and may be configured with a size of 25 μm or less. Compared to single-sided COF, integration density can be increased, the degree of freedom during packaging is improved, and fine pitch is possible by placing circuits or components on both sides. When using only rigid substrates, it is difficult to apply fine pitch, but when using COF substrates, fine pitch can be applied, so the size of MEMS microphone packages can be reduced by more than 50%.

[0032] A flexible printed circuit board (FPCB) is a flexible circuit board that is also flexible and thinner than a standard printed circuit board, so using a flexible printed circuit board as a substrate for a MEMS microphone can significantly reduce the thickness. In addition, other types of flexible substrates may be included.

[0033] In the case of including a COF substrate or a flexible printed circuit board (FPCB), a rigid substrate laminated on the COF substrate or the flexible printed circuit board (FPCB) may be further included. The rigid substrate may be a metal plate, SUS, or a reinforcing plate. SUS is a high-strength substrate made of a steel grade in which chromium is mixed with iron to enhance corrosion resistance. In addition, various reinforcing plates made of metal materials may be used. In addition, other types of rigid substrates capable of maintaining a shield by being combined with a housing may be included.

[0034] The printed circuit board can be formed from FR4 (Flame Retardant 4) or RCC (Resin Coating) material, and may include various other types of boards.

[0035] A housing (140) forming an internal space may be disposed on the upper part of the substrate (110). As shown in FIG. 2, the housing (140) may be disposed on the upper part of the MEMS microphone and may have a cover shape that covers the substrate (110). The housing (140) may be a can type having a metal material and may be formed from various materials such as plastic. The housing (140) may be combined with the substrate (110). At this time, the housing (140) and the substrate (110) may be joined by welding. The area where the housing (140) and the substrate (110) are joined may be joined by micro-welding. By joining the housing (140) and the substrate (110) by micro-welding, the process of applying and curing can solder or epoxy is unnecessary, and the can solder line or epoxy application area is also unnecessary, so the size can be reduced by that area.

[0036] A signal processing element (120) and a MEMS structure (130) may be disposed on the substrate (110). As shown in FIG. 2, the MEMS structure (130) may be disposed within the internal space formed by the substrate (110) and the housing (140). The MEMS structure (130) includes a body, a backplate, and a diaphragm. A hole may be formed in the substrate (110) at a position facing the lower part of the MEMS structure (130). The cross-sectional area of ​​the hole formed in the substrate (110) may be circular, but is not limited thereto. Here, the hole may be an acoustic hole. The hole may also be formed in the housing (140) region facing the upper part of the MEMS structure (130).

[0037] A hole is formed in the substrate (110) or housing (140), and when the diaphragm vibrates due to sound pressure from sound entering from the outside through the hole, the capacitance in the back plate can be measured to sense the acoustic signal. In FIG. 2, the back plate is shown as being located above the diaphragm, but it is obvious that the diaphragm may also be located above the back plate.

[0038] The signal processing element (120) can be connected to the substrate (110) to receive power. The power input terminal (123) of the signal processing element (120) can receive power through the substrate (110). The signal processing element (120) is driven by the received power and can supply a bias voltage to the MEMS structure (130). The signal processing element (120) can be connected to the substrate (110) by wire bonding, or bonded to the substrate (110) by forming a flip-chip BGA using a flip-chip method, or electrically connected to the wire pads of the substrate (110) using a BGA method.

[0039] The signal processing element (120) supplies a bias voltage to the MEMS structure (130), and a signal sensed in the MEMS structure (130) according to changes in the bias voltage and capacitance is transmitted to the signal processing element (120). The MEMS structure (130) and the signal processing element (120) can be electrically connected. At this time, the MEMS structure (130) and the signal processing element (120) are connected by a wire (151) through wire bonding, and a signal sensed in the MEMS structure (130) can be transmitted to the signal processing element (120) through the wire (151).

[0040] The signal processing element (120) can process an electrical signal sensed and transmitted from the MEMS structure (130). The signal processing element (120) can amplify the signal sensed from the MEMS structure (130). Here, the signal processing element (120) may include an Application-Specific Integrated Circuit (ASIC), but is not limited thereto. The signal processing element (120) may be formed as a single module or formed in the form of a chip. The signal processing element (120) may include an ASIC and an En-cap that coats the ASIC.

[0041] A signal processing element (120) may be placed on a substrate (110). At this time, the signal processing element (120) may be placed on the substrate (110) spaced apart from the MEMS structure (130). It may be placed together with the MEMS structure (130) in the internal space formed by the substrate (110) and the housing (140) to receive signals from the MEMS structure (130). Since signal transmission between the MEMS structure (130) and the signal processing element (120) takes place in the internal space covered by the housing (140), noise can be reduced.

[0042] When the signal processing element (120) supplies a bias voltage to the MEMS structure (130), power is supplied from an external power source, such as a battery, through the power input terminal (123), and the bias voltage is supplied to the MEMS structure (130) through the MEMS bias charge pump (125) using the stable power through the regulator (126). At this time, the voltage regulator (126) converts to a stable voltage through a switching operation, but high-frequency noise may be generated by the switching operation. In addition, the MEMS bias charge pump (122) supplies the bias voltage by performing voltage boosting, voltage reduction, inversion, and duplication using a switching element and a capacitor, but the switching operation occurs frequently, and high-frequency noise may be generated as a result. That is, high-frequency noise may be generated by the internal operation of the signal processing element (120), and the noise may lead to performance degradation.

[0043] In order to reduce noise, a first passive component part (111) is formed on the substrate (110).

[0044] The first passive component part (111) is patterned on the substrate (110) and is electrically connected between the MEMS connection terminal (121) of the signal processing element (120) and the MEMS structure (130). The first passive component part (111) is patterned on the substrate (110) and connected to the MEMS connection terminal (121) of the signal processing element (120), so that noise generated inside the signal processing element (120) and applied through the MEMS connection terminal (121) can be reduced.

[0045] The first passive component part (111) may include an inductor. In this case, the first passive component part (111) may include a pattern inductor. The pattern inductor is an inductor implemented through a metal pattern, and the pattern inductor may be formed by forming a metal pattern such as copper on an insulating layer of the substrate (110) or by etching the metal layer of the substrate (110). In addition, the pattern inductor may be formed in various ways, such as by forming a conductive pattern.

[0046] The first passive component part (111) can be patterned in at least one shape among a spiral, a meander, and a helical. As shown in FIG. 3, it can be patterned in a spiral shape (510) that forms a two-dimensional spiral, in a meander shape (520) that forms a zigzag shape, or in a helical shape (530) that forms a three-dimensional spiral. The spiral shape or the helical shape can achieve high inductance because the direction of current between adjacent patterns is the same.

[0047] The pattern inductor forms two or more turns at the starting point of the substrate (110), and has a structure in which the inductance capacity of the inductor increases as the number of turns increases. The region from the starting point to the end point can be electrically connected to the MEMS connection terminal (121) of the signal processing element (120) and the MEMS structure (130).

[0048] The inductance capacity of the pattern inductor can be formed to be 1 nH or more and 100 nH or less and 1000 nH or less, and the area for patterning the pattern inductor can be formed to be 0.01 or more and 0.8 or less of the area of ​​the layer including the pattern inductor of the substrate (110).

[0049] The impedance of a pattern inductor is Z_L = j*2πfL, and as the frequency increases or the capacitance of the inductor increases, the impedance increases, allowing for efficient blocking of high-frequency signals.

[0050] The first passive element part (111) may be formed on at least one of the upper or lower surface of the substrate (110). If the substrate (110) includes a plurality of layers, it may be formed on at least one of the plurality of layers, and in this case, it may be formed on at least one of the upper or lower surface of the said layer.

[0051] The first passive component (111) can be electrically connected to the MEMS connection terminal (121) of the signal processing element (120). The first passive component (111) can be positioned between the MEMS connection terminal (121) and the MEMS structure (130). Through this, the first passive component (111) can reduce the transmission of noise generated by the switching operation of the MEMS bias charge pump (122) to the MEMS structure (130). A regulator can be connected to the front end of the MEMS bias charge pump (122), and the first passive component (111) can also reduce noise generated by the switching operation of the regulator. That is, the first passive component (111) can be positioned immediately after the MEMS connection terminal (121) to reduce noise generated inside the signal processing element (120).

[0052] As shown in FIGS. 1 and 5, the first passive component part (111) may be arranged in series between the MEMS connection terminal (121) of the signal processing element (120) and the MEMS structure (130). At this time, the second passive component part (112) may be connected in parallel with the first passive component part (111). As shown in FIG. 5, the first passive component part (111) may be connected in series between the MEMS structure (130) and the MEMS connection terminal (121) of the signal processing element (120), and the second passive component part (112) may be connected in parallel. The second passive component part (112) may be connected in parallel to the node between the first passive component part (111) and the MEMS structure (130).

[0053] The first passive component part (111) and the second passive component part (112) can store a current containing applied noise to reduce the noise, and allow the noise-reduced bias voltage signal to be applied to the MEMS structure (130).

[0054] Through this, the Signal-to-Noise Ratio (SNR) is improved, and the Power Supply Rejection Ratio (PSRR) and Power Supply Rejection Ratio (PSR) noise can also be improved. Here, PSRR represents the signal ratio at the output terminal of the noise (sine wave) applied to the power supply, allowing for the identification of the effect of power supply noise by frequency. PSR refers to the degree of suppression at the output terminal of pulse noise induced in the power supply when using a communication circuit of the Time Division Multiple Access (TDMA) digital modulation method, such as GSM (Global System for Mobile Communications). That is, by utilizing the first passive component part (111) and the second passive component part (112), noise-related performance such as SNR, PSRR, and PSR can be improved. Additionally, noise that may occur when processing the signal in the signal processing element (120) can be removed.

[0055] When the first passive component part (111) is placed on the same surface as the substrate (110) on which the signal processing element (120) is placed, it can be connected to the MEMS structure (130) and the signal processing element (120) respectively through two wires (161, 162) as shown in FIG. 2. When the first passive component part (111) is placed on the same surface as the signal processing element (120), it includes an electrode pad and can be connected to the MEMS connection terminal (121) of the signal processing element (120) and the MEMS structure (130) through wire bonding to the electrode pad.

[0056] For example, if the substrate (110) includes a printed circuit board (PCB) including FR4 or RCC, the pattern inductor and the signal processing element (120) may be placed on the upper surface of the printed circuit board (PCB), and the electrode pad of the pattern inductor and the MEMS connection terminal (121) of the signal processing element (120) may be connected through wire bonding.

[0057] The substrate (110) may include a first substrate (151) and a second substrate (152). As shown in FIG. 4, it includes a first substrate (151) and a second substrate (152) stacked on the first substrate (151), a first passive component (111) is disposed on the first substrate (151), and the second substrate (152) includes a hole (153) in the area where the first passive component (111) is disposed, and the first passive component (111) can be electrically connected to the MEMS connection terminal (121) of the signal processing element (120) through the hole (153) of the second substrate.

[0058] The substrate (110) may include a 2-metal COF substrate composed of a 2-metal COF and a metal plate. Here, the 2-metal COF may be a first substrate (151), and the metal plate may be a second substrate (152). The first passive component part (111) may be formed on the upper or lower surface of the 2-metal COF, which is the first substrate (151). A metal plate layer, which is the second substrate (152), may not be formed in the area where the first passive component part (111) is placed. A hole (153) or a cavity may be formed in that area. Alternatively, a via penetrating the metal plate may be formed. The first passive component part (111) formed on the 2 metal COF, which is the first substrate (151), can be connected to the MEMS connection terminal (121) of the signal processing element (120) disposed on the upper surface of the Metal plate, which is the second substrate (152), through a hole (153) where the Metal plate, which is the second substrate (152), is not formed, a cavity, or a via penetrating the Metal plate.

[0059] When the first passive element part (111) is placed on a surface different from the surface of the substrate (110) on which the signal processing element (120) is placed, it can be connected to the MEMS connection terminal (121) and the MEMS structure (130) of the signal processing element (120) through a via.

[0060] The second passive component (112) can be positioned between the MEMS bias charge pump (122) and the MEMS connection terminal (121) of the signal processing element (120). By doing so, the second passive component (112) can reduce the transmission of noise generated by the switching operation of the MEMS bias charge pump (122) to the MEMS structure (130). A regulator can be connected to the front end of the MEMS bias charge pump (122), and the second passive component (112) can also reduce noise generated by the switching operation of the regulator. That is, the second passive component (112) can be positioned immediately after the MEMS connection terminal (122) to reduce noise generated inside the signal processing element (120). The second passive component part (112) and the first passive component part (111) are connected in parallel so that noise can be reduced together.

[0061] The second passive element section (112) may include a second-1 passive element section (113) disposed on the substrate (110). As shown in FIGS. 6 to 8, the second-1 passive element section (113) may be connected in parallel with the first passive element section (111).

[0062] The second-1 passive component part (113) may be placed on the upper surface of the substrate (110) as shown in FIG. 7. The second-1 passive component part (113) may include Multilayer Ceramic Capacitors (MLCCs), and a bypass capacitor may be formed in a shunt shape using the MLCCs. The second-1 passive component part (113) formed by the MLCCs may be directly connected to the first passive component part (111) through wire bonding, or electrically connected to the first passive component part (111) through the substrate (110) in an SMD type. The MLCCs may have a capacitance of 100 pF or more.

[0063] When the substrate (110) includes a first substrate (151) and a second substrate (152), the first passive component (111) may be placed on the first substrate (151), and the second-1 passive component (113) may be placed on the second substrate (152). The second-1 passive component (113), formed as an MLCC, may be directly connected to the first passive component (111) through wire bonding, or electrically connected to the first passive component (111) through at least one of the first substrate (151) or the second substrate (152) in an SMD type. Alternatively, both the first passive component part (111) and the second-1 passive component part (113) may be placed on the first substrate (151), and the second-1 passive component part (113) may be directly connected to the first passive component part (111) through wire bonding, or electrically connected to the first passive component part (111) through at least one of the first substrate (151) or the second substrate (152) in an SMD type.

[0064] The second passive component part (112) may include a second-2 passive component part (114) that is embedded within the substrate (110) and connected in parallel with the first passive component part (111). As shown in FIGS. 9 to 13, the second-2 passive component part (114) may be connected in parallel with the first passive component part (111).

[0065] The second-2 passive component part (114) is embedded within the substrate (110), connected in parallel with the first passive component part (111), and can be electrically connected to the MEMS connection terminal (121) of the signal processing element (120) and the MEMS structure (130). The second-2 passive component part (114) can be embedded within the substrate (110). The second-2 passive component part (114) may include a capacitor implemented by stacking an ECM (Embedded Capacitance Material) within the substrate (110). The ECM capacitor can implement a bypass capacitor.

[0066] The substrate (110) may include a lower substrate and an upper substrate. As shown in FIG. 10, a second-2 passive component part (114) may be disposed between the lower substrate (171) and the upper substrate (172) of the substrate (110). The second-2 passive component part (114) may be attached to the lower substrate (171) and the upper substrate (172) by a bonding sheet (181, 182) or solder. The bonding sheet may be made of a conductive material, and one electrode layer of the second-2 passive component part (114) may be electrically connected to the power supply of the substrate (110), and the other electrode layer may be electrically connected to the ground of the substrate (110).

[0067] The second-2 passive element part (114) may include an insulating layer (191) and electrode layers (192, 193). As shown in FIG. 11, the second-2 passive element part (114) has electrode layers (192, 193) disposed on the upper and lower surfaces, respectively, and an insulating layer (191) formed between the electrode layers, thereby allowing it to function as a capacitor through a high dielectric material between the planar surfaces of the electrode layers.

[0068] The electrode layer may include a first electrode layer (192) and a second electrode layer (193). In a state where the first electrode layer (192) and the second electrode layer (193) are stacked together, an insulating layer (191) may be disposed in the space between the first electrode layer (192) and the second electrode layer (193). Through this, the first electrode layer (192) and the second electrode layer (193) can be electrically insulated from each other. The electrode layer may include a conductive metal material such as Cu or Au. The insulating layer (191) is a means disposed between the first electrode layer (192) and the second electrode layer (193) to generate a capacitor function. The insulating layer (191) may be made of an insulating material having a high dielectric constant. The insulating material may be a material formed by compressing a ceramic-based material, and may include BaTiO3 as an example, but is not limited thereto, and various insulating materials having high dielectric constants may be used without limitation. As one of the first electrode layer (192) and the second electrode layer (193) is electrically connected to ground and the other to a power source, respectively, by the insulating layer (191), the first electrode layer (192) and the second electrode layer (193) can each perform the roles of ground and power source, and the second-2 passive component part (114) can perform the role of a capacitor by the insulating layer (191).

[0069] As described above, the second-2 passive component part (114), comprising electrode layers (192, 193) and an insulating layer (191), can be attached to the substrate (110) by a bonding sheet (181, 182) or solder. The bonding sheet (181, 182) may be made of a conductive material, and one electrode layer of the second-2 passive component part (114) may be electrically connected to the power supply part of the substrate (110), and the other electrode layer may be electrically connected to the ground of the substrate (110).

[0070] Here, the substrate (110) may include a lower substrate (171) positioned at the bottom and an upper substrate (172) positioned at the top, and the lower substrate (171) may serve as a ground and the upper substrate (172) may serve as a power source. The two electrode layers (192, 193) of the second-2 passive component part (114) are electrically connected to the lower substrate (171) and the upper substrate (182), respectively, and may serve as a ground and a power source, respectively.

[0071] When the electrode layer of the second-2 passive element part (114) is located inside the substrate (110), it can be electrically connected to the substrate (110) through a bonding sheet and electrically connected to the MEMS connection terminal (121) of the first passive element part (111) or signal processing element (120) placed on the substrate (110) through the substrate (110).

[0072] The substrate (110) may include a first substrate (151) and a second substrate (152). As shown in FIG. 12, it may include a first substrate (151) and a second substrate (152) stacked on the first substrate (151), a first passive component (111) may be placed on the first substrate (151), and a second passive component (114) may be placed between the first substrate (151) and the second substrate (152). The second substrate (152) may include a hole (153) in the area where the first passive component (111) is placed, and the first passive component (111) may be electrically connected to the MEMS connection terminal (121) of the signal processing element (120) through the hole (153) of the second substrate. The first passive element part (111) can be electrically connected to the second passive element part (114) through wire bonding or a substrate (at least one of 151 or 152).

[0073] The substrate (110) may include a 2-metal COF substrate composed of a 2-metal COF and a metal plate. Here, the 2-metal COF may be a first substrate (151), and the metal plate may be a second substrate (152). A first passive component part (111) may be formed on the upper or lower surface of the 2-metal COF, which is the first substrate (151). A second passive component part (114) may be disposed between the first substrate (151) and the second substrate (152). A second passive component part (114) may be disposed on the upper surface of the 2-metal COF, which is the first substrate (151).

[0074] In the area where the first passive component part (111) is placed, the second-2 passive component part (114) and the second substrate (152), which is a metal plate layer, may not be formed. A hole (153) or a cavity may be formed in the area. Alternatively, a via penetrating the metal plate may be formed. The first passive component part (111) formed on the 2-metal COF, which is the first substrate (151), may be connected to the MEMS connection terminal (121) of the signal processing element (120) placed on the upper surface of the metal plate, which is the second substrate (152), through the hole (153), cavity, or via penetrating the metal plate, where the metal plate, which is the second substrate (152), is not formed. The substrate (110) may include a plurality of layers, and the second-2 passive component part (114) may be formed on an inner layer or an outer layer of the substrate (110). The ECM capacitor material can be formed from a material having a high dielectric constant of 8 or higher, and when formed on the outer layer of a substrate, it can be physically and electrically connected to a conductive bonding sheet. The impedance of the ECM capacitor is Z_C = j / 2πfC, and as the frequency decreases or the capacitance of the capacitor decreases, the impedance increases, allowing it to efficiently block low-frequency signals.

[0075] The second passive element section (112) may include a second-1 passive element section (113) and a second-2 passive element section (114). As shown in FIGS. 14 to 17, the second-1 passive element section (113) and the second-2 passive element section (114) may be connected in parallel.

[0076] As shown in FIG. 15, the second-1 passive component part (113) is placed on the upper surface of the substrate (110), and the second-2 passive component part (114) can be embedded within the substrate (110). The second-1 passive component part (113) may include Multilayer Ceramic Capacitors (MLCCs), and a bypass capacitor may be formed in a shunt shape using the MLCCs. The second-1 passive component part (113) formed by the MLCCs may be directly connected to the first passive component part (111) through wire bonding, or electrically connected to the first passive component part (111) through the substrate (110) in an SMD type. The second-1 passive component part (113) may be connected to the second-2 passive component part (114) through vias. The MLCC can have a capacitance of 100 pF or more. The second-2 passive component part (114) is embedded within the substrate (110), connected in parallel with the first passive component part (111), and can be electrically connected to the MEMS connection terminal (121) of the signal processing element (120) and the MEMS structure (130). The second-2 passive component part (114) can be embedded within the substrate (110). The second-2 passive component part (114) may include a capacitor implemented by stacking an ECM (Embedded Capacitance Material) within the substrate (110). The ECM capacitor can implement a bypass capacitor.

[0077] The substrate (110) may include a lower substrate and an upper substrate. As shown in FIG. 15, the substrate (110) may have a second-2 passive component part (114) disposed between the lower substrate (171) and the upper substrate (172). The second-2 passive component part (114) may include an insulating layer (191) and electrode layers (192, 193). The second-2 passive component part (114) may perform the role of a capacitor by means of a high dielectric material between the planar surfaces of the electrode layers, by having electrode layers (192, 193) disposed on the upper surface and the lower surface, respectively, and an insulating layer (191) formed between the electrode layers.

[0078] The first passive element part (111) can be patterned on the upper substrate (172), the second passive element part (114) is placed between the upper substrate (172) and the lower substrate (171), and the second passive element part (113) is placed on the upper substrate (172) and can be electrically connected to each other.

[0079] The substrate (110) may include a first substrate and a second substrate. As shown in FIG. 16, the substrate (110) may include a 2-metal COF substrate composed of a 2-metal COF and a metal plate. Here, the 2-metal COF may be the first substrate (151), and the metal plate may be the second substrate (152). The first passive component (111) may be formed on the upper or lower surface of the 2-metal COF, which is the first substrate (151). The second-2 passive component (114) may be disposed between the first substrate (151) and the second substrate (152). The second-2 passive component (114) may be disposed on the upper surface of the 2-metal COF, which is the first substrate (151). The second-1 passive component (113) may be disposed on the upper surface of the metal plate, which is the second substrate (152).

[0080] In the area where the first passive component part (111) is placed, the second passive component part (114) and the second substrate (152), which is a metal plate layer, may not be formed. A hole (183) or a cavity may be formed in the area. Alternatively, a via penetrating the metal plate may be formed. The first passive component part (111) formed on the 2-metal COF, which is the first substrate (151), may be connected to the MEMS connection terminal (121) of the signal processing element (120) placed on the upper surface of the metal plate, which is the second substrate (152), through the hole (183), cavity, or via penetrating the metal plate, which is the second substrate (152), where the metal plate is not formed. A first passive element part (111) can be patterned on a first substrate (152), a second passive element part (114) is disposed between the first substrate (151) and the second substrate (152), and a second passive element part (113) is disposed on the second substrate (152) and can be electrically connected to each other.

[0081] Additionally, the second passive component part (112) may include a third passive component part, which is an external passive component part. In this case, the third passive component part may include an MLCC capacitor. A variable capacitor may also be implemented by forming a switching part to connect only some of the multiple passive component parts.

[0082] The 2-1 passive component section (113) and the 2-2 passive component section (114) may have different capacities. The 2-1 passive component section (113) and the 2-2 passive component section (114) may have different frequency bands of noise reduction. For example, when receiving signals having two different bandwidths, the 2-1 passive component section (113) and the 2-2 passive component section (114) can reduce the noise of each signal having a different bandwidth.

[0083] Those skilled in the art related to the embodiments described above will understand that they may be implemented in modified forms without departing from the essential characteristics of the description. Therefore, the disclosed methods should be considered in an illustrative rather than a restrictive sense. The scope of the invention is defined by the claims, not by the foregoing description, and all variations within the scope of equivalence should be interpreted as being included in the invention.

Claims

1. Substrate; A MEMS structure disposed on the above substrate; A signal processing element disposed on the above substrate and processing a signal of the MEMS structure; A first passive component part patterned on the substrate and electrically connected to the MEMS connection terminal of the signal processing element; and It includes a second passive element connected in parallel with the first passive element, and The MEMS connection terminal of the above signal processing element is a MEMS microphone electrically connected to the above MEMS structure.

2. In Paragraph 1, The above-mentioned first passive component part is, A MEMS microphone connected by a wire to the MEMS structure and the MEMS connection terminal of the signal processing element, respectively.

3. In Paragraph 1, The above second passive component is, A MEMS microphone comprising a second passive component section embedded within the substrate and connected in parallel with the first passive component section.

4. In Paragraph 3, The above second passive component is, A MEMS microphone comprising a second-1 passive element portion disposed on the substrate and connected in parallel with the second-2 passive element portion.

5. In Paragraph 1, The above second passive component is, A MEMS microphone comprising a second-1 passive element portion disposed on the above substrate.

6. In Paragraph 1, The above-mentioned first passive component is a MEMS microphone including a pattern inductor.

7. In Paragraph 1, The above-mentioned first passive component part is, A MEMS microphone patterned in at least one of a spiral, meander, and helical shape.

8. In Paragraph 1, The above substrate is, A MEMS microphone comprising at least one of a printed circuit board (PCB), a flexible printed circuit board (FPCB), and a Chip on Film (COF) substrate.

9. In Paragraph 1, The first passive component is a MEMS microphone connected to the second passive component through a wire or via.

10. In Paragraph 1, The above-mentioned first passive element is a MEMS microphone connected in parallel with an external third passive element.

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