Transistor in-line package module

Abstract

Disclosed in the present application is a transistor in-line package module, comprising: an insulating package body and at least one transistor packaged therein; a lead frame, which comprises in-line pins extending from the insulating package body and a die pad disposed in the insulating package body, the transistor being mounted on the die pad and being electrically connected to the in-line pins; and a metal heat dissipation plate, which is configured to be partially exposed from the insulating package body, wherein the metal heat dissipation plate and the lead frame are made of copper or a copper alloy, and the side of the lead frame facing away from the transistor is adhesively connected to the metal heat dissipation plate by means of an insulating and thermally conductive adhesive. The package module of the present application has the advantage of good heat dissipation performance.

Description

Transistor through-hole package module Technical Field

[0001] This application relates to the field of semiconductor packaging; more specifically, it relates to a transistor through-hole package module. Background Technology

[0002] The pins of the through-hole package module can be directly inserted into the mounting holes of the circuit board. This packaging method makes the connection between the package module and the circuit board more secure, which helps to improve the reliability and stability of the product.

[0003] In the existing technology, the through-hole package module of transistors mainly dissipates heat through the through-hole pins of the lead frame, which has the disadvantage of poor heat dissipation performance and needs to be improved. Summary of the Invention

[0004] The main objective of this application is to provide a transistor through-hole package module with improved heat dissipation performance.

[0005] To achieve the aforementioned main objectives, this application discloses a transistor through-hole package module, comprising:

[0006] An insulating package and at least one transistor encapsulated therein;

[0007] A lead frame includes a plurality of through-hole pins extending from the insulating package and a die pad disposed within the insulating package, wherein the transistor is mounted on the die pad and electrically connected to the through-hole pins;

[0008] A metal heat sink is configured to be partially exposed from the insulating package; wherein the metal heat sink and the lead frame are made of copper or a copper alloy, and the side of the lead frame facing away from the transistor is bonded to the metal heat sink by an insulating thermally conductive adhesive.

[0009] According to one specific embodiment of this application, the thickness of the insulating thermally conductive adhesive is 0.10 mm to 0.15 mm.

[0010] According to one specific embodiment of this application, the thermal conductivity of the insulating thermally conductive adhesive is greater than 3 W / m·K.

[0011] According to one specific embodiment of this application, the through-hole pin is configured to extend from a first side of the insulating package, and the metal heat sink has a heat dissipation portion extending from a second side of the insulating package, the second side being disposed opposite to the first side.

[0012] Furthermore, the heat dissipation part has grooves on both opposite sides in its width direction.

[0013] According to one specific embodiment of this application, the surface of the metal heat sink facing away from the insulating thermally conductive adhesive forms a heat dissipation surface exposed from the insulating package.

[0014] Furthermore, viewed from the thickness direction of the metal heat sink, the heat dissipation surface is configured not to extend beyond the insulating encapsulation.

[0015] According to one specific embodiment of this application, the die pad and one of the plurality of through-hole pins have an integrally formed structure.

[0016] According to one specific embodiment of this application, the plurality of through-hole pins are arranged linearly.

[0017] According to one specific embodiment of this application, the through-hole pin has a bent portion disposed within the insulating package.

[0018] The technical solution of this application has the following beneficial effects:

[0019] In the packaging module of this application, the metal heat sink and the lead frame are thermally connected by a thermally conductive insulating adhesive. Both are made of copper or a copper alloy, which have good thermal conductivity. The transistor can dissipate heat not only through the pins of the lead frame but also through the metal heat sink exposed from the insulating package, thus achieving better heat dissipation performance. Furthermore, the metal heat sink and the lead frame are bonded together with an insulating thermally conductive adhesive for fixation and heat conduction, which has the advantages of convenient manufacturing and low cost.

[0020] To more clearly illustrate the purpose, technical solution, and advantages of this application, the following detailed description is provided in conjunction with the accompanying drawings and specific embodiments. Attached Figure Description

[0021] Figure 1 is a schematic diagram of the overall structure of the packaging module in Embodiment 1;

[0022] Figure 2 is a schematic diagram of the overall structure of the carrier plate assembly in Embodiment 1;

[0023] Figure 3 is an exploded structural diagram of the carrier plate assembly in Embodiment 1;

[0024] Figure 4 is a schematic diagram of the carrier plate assembly in a variation of Embodiment 1;

[0025] Figure 5 is a schematic diagram of the overall structure of the packaging module in Embodiment 2;

[0026] Figure 6 is a schematic diagram of the overall structure of the carrier plate assembly in Embodiment 2;

[0027] Figure 7 is an exploded structural diagram of the carrier plate assembly in Embodiment 2;

[0028] Figure 8 is a schematic diagram of the carrier plate assembly in a variation of Embodiment 2. Detailed Implementation

[0029] Numerous specific details are set forth in the following description to provide a thorough understanding of this application; however, this application may also be implemented in other ways different from those described herein. Therefore, the scope of protection of this application is not limited to the specific embodiments disclosed below.

[0030] Example 1

[0031] As shown in Figures 1 to 3, the transistor through-hole package module of this embodiment includes a carrier assembly 100, an insulating encapsulation body 200 (e.g., resin), and at least one transistor 300 encapsulated within the insulating encapsulation body 200. The transistor 300 may be a MOSFET chip or an IGBT chip, but is not limited thereto. The carrier assembly 100 includes a metal heat sink 110 and a lead frame 130. The side of the lead frame 130 facing away from the transistor 300 is bonded to the metal heat sink 110 by an insulating thermally conductive adhesive 120. The metal heat sink 110 and the lead frame 130 are made of copper or a copper alloy.

[0032] In this application, the thickness of the insulating thermally conductive adhesive 120 can be determined based on factors such as the voltage withstand capability, connection strength, and thermal conductivity requirements between the lead frame 130 and the metal heat sink 110. The specific thickness can be 0.10 mm to 0.15 mm, but is not limited thereto. The thermal conductivity of the insulating thermally conductive adhesive 120 is preferably greater than 3 W / m·K, more preferably greater than 5 W / m·K, for example, 10 W / m·K.

[0033] The lead frame 130 includes a plurality of through-hole pins 132 extending from a first side of the insulating package 200 and a die pad 131 disposed within the insulating package 200. The transistor 300 is mounted on the surface of the die pad 131 facing away from the thermally conductive insulating adhesive 120 and electrically connected to the through-hole pins 132. Preferably, the die pad 131 and one of the plurality of through-hole pins 132 have an integrally formed structure to simplify the structure of the lead frame 130.

[0034] The multiple through-hole pins 132 are preferably arranged in a linear configuration. In Embodiment 1, as shown in Figures 2 and 3, the multiple through-hole pins 132 include a first pin 132a and a second pin 132b with a planar structure. The die pad 131 has an integrally formed structure with the first pin 132a. The transistor 300 mounted on the die pad 131 can be electrically connected to the first pin 132a via the die pad 131. The transistor 300 can be electrically connected to the second pin 132b via a conductive wire (e.g., gold or silver wire). Both the solder pad 132b1 and the conductive wire are encapsulated within an insulating package 200.

[0035] The metal heat sink 110 is configured to be partially exposed from the insulating package 200 for connection to an external heat sink or for direct heat dissipation. In Embodiment 1, the metal heat sink 110 has a heat dissipation portion 110b extending from a second side of the insulating package 200, the second side being disposed opposite to the first side. Preferably, the heat dissipation portion 110b has recesses 111 on both opposite sides in its width direction.

[0036] As a variation of Embodiment 1, as shown in FIG4, each of the plurality of through-hole pins 132, including the first pin 132a and the second pin 132b, has a bend 133 disposed within the insulating package 200.

[0037] Example 2

[0038] As shown in Figures 5 to 7, the transistor through-hole package module of Embodiment 2 includes a carrier assembly 100, an insulating package 200, and at least one transistor 300 encapsulated within the insulating package 200. The carrier assembly 100 includes a metal heat sink 110 and a lead frame 130. The side of the lead frame 130 facing away from the transistor 300 is bonded to the metal heat sink 110 via an insulating thermally conductive adhesive 120. The lead frame 130 includes a plurality of through-hole pins 132 extending from the insulating package 200 and a die pad 131 disposed within the insulating package 200. The transistor 300 is mounted on the surface of the die pad 131 facing away from the thermally conductive insulating adhesive 120 and electrically connected to the through-hole pins 132.

[0039] For example, a plurality of through-hole pins 132 include a first pin 132a, a second pin 132b, and a third pin 132c arranged linearly. A die pad 131 has an integrally formed structure with the first pin 132a. A transistor 300 mounted on the die pad 131 can be electrically connected to the first pin 132a via the die pad 131. The transistor 300 can be electrically connected to the second pin 132b and the third pin 132c via conductive wires (e.g., gold or silver wires). The pads 132b1, 132c1, and conductive wires are all encapsulated within an insulating package 200.

[0040] In Embodiment 2, as shown in FIG5, the surface of the metal heat sink 110 facing away from the insulating thermally conductive adhesive 120 forms a heat dissipation surface 110a exposed from the insulating package 200. Preferably, viewed from the thickness direction of the metal heat sink 110, the heat dissipation surface 110a is configured not to extend beyond the insulating package 200, which is beneficial for miniaturizing the packaged module. The heat dissipation surface 110a and the surface of the insulating package 200 can be flush or have a height difference.

[0041] As a variation of Embodiment 2, as shown in FIG8, each of the plurality of through-hole pins 132, including a first pin 132a, a second pin 132b and a third pin 132c, has a bend 133 disposed within the insulating package 200.

[0042] Further descriptions of Example 2 can be found in Example 1, and will not be repeated here.

[0043] In summary, in the transistor through-hole package module of this application, the metal heat sink 110 and the lead frame 130 are thermally connected. The transistor 300 can dissipate heat not only through the through-hole pins 132 of the lead frame 130, but also through the metal heat sink 110 exposed from the insulating package 200, thus achieving better heat dissipation performance. The metal heat sink 110 and the lead frame 130 are bonded together with insulating thermally conductive adhesive 120 for fixation, thermal conduction, and electrical insulation, which has the advantages of convenient manufacturing and low cost.

[0044] Although the present application has been described above through embodiments, it should be understood that the above embodiments are only used to exemplarily describe possible implementations of the present application and should not be construed as limiting the scope of protection of the present application. Any equivalent changes made by those skilled in the art in accordance with the present application should also be covered by the scope of protection of the claims of the present application.

Claims

1. A transistor through-hole package module, comprising an insulating package and at least one transistor encapsulated therein, characterized in that: A lead frame includes a plurality of through-hole pins extending from the insulating package and a die pad disposed within the insulating package, wherein the transistor is mounted on the die pad and electrically connected to the through-hole pins; A metal heat sink is configured to be partially exposed from the insulating package; wherein the metal heat sink and the lead frame are made of copper or a copper alloy, and the side of the lead frame facing away from the transistor is bonded to the metal heat sink by an insulating thermally conductive adhesive.

2. The transistor through-hole package module according to claim 1, characterized in that: The thickness of the insulating thermally conductive adhesive is 0.10mm to 0.15mm.

3. The transistor through-hole package module according to claim 1, characterized in that: The thermal conductivity of the insulating thermally conductive adhesive is greater than 3 W / m·K.

4. The transistor through-hole package module according to claim 1, characterized in that: The through-hole pins are configured to extend from a first side of the insulating package, and the metal heat sink has a heat dissipation portion extending from a second side of the insulating package, the second side being disposed opposite to the first side.

5. The transistor through-hole package module according to claim 4, characterized in that: The heat dissipation part has grooves on both sides of its width direction.

6. The transistor through-hole package module according to claim 1, characterized in that: The surface of the metal heat sink facing away from the insulating thermally conductive adhesive forms a heat dissipation surface exposed from the insulating package.

7. The transistor through-hole package module according to claim 6, characterized in that: Viewed from the thickness direction of the metal heat sink, the heat dissipation surface is configured not to extend beyond the insulating encapsulation.

8. The transistor through-hole package module according to claim 1, characterized in that: The die pad and one of the plurality of through-hole pins have an integrally formed structure.

9. The transistor through-hole package module according to claim 1, characterized in that: The multiple through-hole pins are arranged linearly.

10. The transistor through-hole package module according to claim 1, characterized in that: The through-hole pin has a bend that is disposed within the insulating package.

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