LED epitaxial structure, preparation method therefor, and electronic device

Abstract

The present application provides an LED epitaxial structure, a preparation method therefor, and an electronic device, relating to the technical field of semiconductor light-emitting devices. The epitaxial structure comprises a substrate; and a first-type semiconductor layer, a first multiple quantum well layer, a relative light intensity adjustment layer, a second multiple quantum well layer, and a second-type semiconductor layer located on one side of the substrate; the first multiple quantum well layer and the second multiple quantum well layer have different bandgap widths; and the relative light intensity adjustment layer is configured to adjust the effective recombination phase ratio of the bandgap of the first multiple quantum well layer and the bandgap of the second multiple quantum well layer. A dual-band light emission effect of the LED epitaxial structure is achieved by means of the first multiple quantum well layer and the second multiple quantum well layer having different bandgap widths, and the effective recombination phase ratio of the bandgap of the first multiple quantum well layer and the bandgap of the second multiple quantum well layer is adjusted by means of the relative light intensity adjustment layer, so as to achieve the purpose of adjusting the relative light intensity ratio of the first multiple quantum well layer and the second multiple quantum well layer, and ultimately achieve the purpose of improving the color gamut of an electronic device at an application end.

Description

An LED epitaxial structure, its fabrication method, and an electronic device thereof

[0001] This application claims priority to Chinese Patent Application No. 202411517200.4, filed on October 29, 2024, entitled "An LED Epitaxial Structure and Its Preparation Method and Electronic Device", the entire contents of which are incorporated herein by reference. Technical Field

[0002] This application relates to the field of semiconductor light-emitting device technology, and more specifically, to an LED epitaxial structure, its fabrication method, and an electronic device thereof. Background Technology

[0003] Light-emitting diodes (LEDs) have advantages such as small size, high efficiency, energy saving, and long lifespan, leading to their widespread application. Display backlighting is a significant application area for LEDs. As people's demands for electronic products continue to increase, the requirements for display color gamut are also rising. Traditional backlights made from a single blue LED chip can only achieve a medium color gamut. While using a combination of multiple LED chips of different colors can improve the color gamut, it increases the complexity and cost of the circuit design in the application. Summary of the Invention

[0004] In view of this, this application provides an LED epitaxial structure, its fabrication method, and an electronic device, which effectively solves the technical problems existing in the prior art. By using a first multiple quantum well layer and a second multiple quantum well layer with different band gap widths, the dual-band light emission effect of the LED epitaxial structure is achieved. At the same time, by adjusting the effective recombination ratio of the band gaps of the first multiple quantum well layer and the second multiple quantum well layer through a relative light intensity modulation layer, the relative light intensity ratio of the first multiple quantum well layer and the second multiple quantum well layer is adjusted, ultimately achieving the purpose of improving the color gamut of the application-end electronic device.

[0005] To achieve the above objectives, the technical solution provided in this application is as follows:

[0006] An LED epitaxial structure, comprising:

[0007] Substrate;

[0008] A first type semiconductor layer, a first multiple quantum well layer, a relative light intensity modulation layer, a second multiple quantum well layer, and a second type semiconductor layer are sequentially stacked and grown on one side of the substrate along a direction perpendicular to the plane of the substrate.

[0009] The first quantum well layer and the second quantum well layer have different band gap widths;

[0010] The relative light intensity modulation layer is used to adjust the effective recombination ratio of the band gap of the first multiple quantum well layer and the band gap of the second multiple quantum well layer.

[0011] Optionally, the first multi-quantum-well layer includes:

[0012] An InxGa(Ix)N quantum well layer and a first GaN quantum barrier layer are grown alternately in sequence, wherein the number of growth cycles of the first multi-quantum well layer ranges from 1 to 4.

[0013] Optionally, the thickness of the InxGa(Ix)N quantum well layer ranges from 2nm to 3nm;

[0014] The thickness of the first GaN quantum barrier layer ranges from 10 nm to 17 nm.

[0015] Optionally, the second multiple quantum well layer includes:

[0016] The InyGa(Iy)N quantum well layer and the second GaN quantum barrier layer are grown alternately in sequence, wherein the number of growth cycles of the second multi-quantum well layer ranges from 6 to 15.

[0017] Optionally, the thickness of the InyGa(Iy)N quantum well layer ranges from 3nm to 4nm;

[0018] The thickness of the second GaN quantum barrier layer ranges from 8 nm to 12 nm.

[0019] Optionally, the relative light intensity modulating layer includes: a first GaN layer, an AlN layer, and a second GaN layer grown sequentially.

[0020] Optionally, the thickness of the first GaN layer ranges from 3nm to 6nm;

[0021] The thickness of the AlN layer ranges from 2nm to 5nm;

[0022] The thickness of the second GaN layer ranges from 10 nm to 15 nm.

[0023] Optionally, the LED epitaxial structure further includes:

[0024] A buffer layer located between the substrate and the first type of semiconductor layer;

[0025] And / or, an undoped layer located between the substrate and the first type of semiconductor layer, wherein when the LED epitaxial structure includes the buffer layer, the undoped layer is located between the buffer layer and the first type of semiconductor layer;

[0026] And / or, a stress relief layer located between the first type of semiconductor layer and the first multiple quantum well layer;

[0027] And / or, an electron blocking layer located between the second multiple quantum well layer and the second type of semiconductor layer.

[0028] Based on the same inventive concept, this application also provides a preparation method for preparing the above-mentioned LED epitaxial structure, the preparation method comprising:

[0029] Provide a substrate;

[0030] A first type semiconductor layer, a first multiple quantum well layer, a relative light intensity modulation layer, a second multiple quantum well layer, and a second type semiconductor layer are sequentially stacked on one side of the substrate and along a direction perpendicular to the plane of the substrate.

[0031] The first quantum well layer and the second quantum well layer have different band gap widths.

[0032] The relative light intensity modulation layer is used to adjust the effective recombination ratio of the band gap of the first multiple quantum well layer and the band gap of the second multiple quantum well layer.

[0033] Based on the same inventive concept, this application also provides an electronic device, which includes the above-described LED epitaxial structure.

[0034] Compared with existing technologies, the technical solution provided in this application has at least the following advantages:

[0035] This application provides an LED epitaxial structure, its fabrication method, and an electronic device, comprising: a substrate; a first type semiconductor layer, a first multiple quantum well layer, a relative light intensity modulation layer, a second multiple quantum well layer, and a second type semiconductor layer sequentially stacked on one side of the substrate along a direction perpendicular to the plane of the substrate; the first multiple quantum well layer and the second multiple quantum well layer have different bandgap widths; the relative light intensity modulation layer is used to adjust the effective recombination ratio of the bandgap of the first multiple quantum well layer and the bandgap of the second multiple quantum well layer.

[0036] As can be seen from the above, the technical solution provided in this application achieves the dual-band light emission effect of the LED epitaxial structure through a first multiple quantum well layer and a second multiple quantum well layer with different band gap widths. At the same time, by adjusting the effective recombination ratio of the band gaps of the first multiple quantum well layer and the second multiple quantum well layer through a relative light intensity modulation layer, the relative light intensity ratio of the first multiple quantum well layer and the second multiple quantum well layer is adjusted, thereby achieving the purpose of improving the color gamut of the application-end electronic device. Attached Figure Description

[0037] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only embodiments of this application. For those skilled in the art, other drawings can be obtained based on the provided drawings without creative effort.

[0038] Figure 1 is a schematic diagram of an LED epitaxial structure provided in an embodiment of this application;

[0039] Figure 2 is a schematic diagram of another LED epitaxial structure provided in an embodiment of this application;

[0040] Figure 3 is a structural schematic diagram of another LED epitaxial structure provided in an embodiment of this application;

[0041] Figure 4 is a flowchart of a preparation method provided in an embodiment of this application. Detailed Implementation

[0042] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0043] As described in the background section, light-emitting diodes (LEDs) have advantages such as small size, high efficiency, energy saving, and long lifespan, leading to their widespread application. Display backlighting is a significant application area for LEDs. With increasing demands for higher color gamut in electronic products, the requirements for display screen color gamut are also rising. Traditional backlights made from a single blue LED chip can only achieve a medium color gamut. While using a combination of multiple LED chips of different colors can improve the color gamut, it increases the complexity and cost of the circuit design in the application.

[0044] Based on this, the embodiments of this application provide an LED epitaxial structure, its fabrication method, and an electronic device, which effectively solves the technical problems existing in the prior art. By using a first multiple quantum well layer and a second multiple quantum well layer with different band gap widths, the dual-band light emission effect of the LED epitaxial structure is achieved. At the same time, by adjusting the effective recombination ratio of the band gaps of the first multiple quantum well layer and the second multiple quantum well layer through a relative light intensity modulation layer, the relative light intensity ratio of the first multiple quantum well layer and the second multiple quantum well layer is adjusted, thereby achieving the purpose of improving the color gamut of the application-end electronic device.

[0045] To achieve the above objectives, the technical solutions provided in this application are as follows, and the technical solutions provided in this application will be described in detail with reference to Figures 1 to 4.

[0046] Referring to Figure 1, which is a schematic diagram of an LED epitaxial structure provided in an embodiment of this application, the LED epitaxial structure provided in this embodiment includes:

[0047] Substrate 100; a first type semiconductor layer 210, a first multiple quantum well layer 310, a relative light intensity modulation layer 400, a second multiple quantum well layer 320, and a second type semiconductor layer 220 are sequentially stacked on one side of the substrate 100 and along a direction perpendicular to the plane of the substrate 100; the first multiple quantum well layer 310 and the second multiple quantum well layer 320 have different band gap widths; the relative light intensity modulation layer 400 is used to adjust the effective recombination ratio of the band gaps of the first multiple quantum well layer 310 and the second multiple quantum well layer 320.

[0048] As can be seen from the above, the technical solution provided in this application embodiment achieves the dual-band light emission effect of the LED epitaxial structure through the first multiple quantum well layer 310 and the second multiple quantum well layer 320 with different band gap widths. At the same time, the relative light intensity modulation layer 400 adjusts the effective recombination ratio of the band gaps of the first multiple quantum well layer 310 and the second multiple quantum well layer 320, thereby achieving the purpose of adjusting the relative light intensity ratio of the first multiple quantum well layer 310 and the second multiple quantum well layer 320, and ultimately achieving the purpose of improving the color gamut of the application-end electronic device.

[0049] Understandably, the bandgap width of the multi-quantum well layer between the first type semiconductor layer 210 and the second type semiconductor layer 220 of the LED epitaxial structure determines the wavelength of light emitted by the LED epitaxial structure. Compared with the existing design of epitaxial structures with a single bandgap width of multi-quantum well layers, the LED epitaxial structure provided in this application introduces a first multi-quantum well layer 310 and a second multi-quantum well layer 320 with different bandgap widths between the first type semiconductor layer 210 and the second type semiconductor layer 220, thereby enabling the LED epitaxial structure to achieve dual-band light emission. Furthermore, the dual-band light-emitting LED epitaxial structure provided in this application embodiment also needs to adjust the light intensity of the first quantum well layer 310 and the second quantum well layer 320 to a suitable relative ratio to improve the color gamut of the application-end electronic device. Therefore, in the LED epitaxial structure provided in this application embodiment, a relative light intensity adjustment layer 400 is added between the first quantum well layer 310 and the second quantum well layer 320 to add an energy barrier between the first quantum well layer 310 and the second quantum well layer 320. Then, by adjusting the intensity of the energy barrier, the effective recombination ratio of the band gap of the first quantum well layer 310 and the band gap of the second quantum well layer 320 is adjusted, thereby achieving the purpose of adjusting the relative ratio of the light intensity of the first quantum well layer 310 and the second quantum well layer 320, and ultimately achieving the purpose of improving the color gamut of the application-end electronic device.

[0050] In one embodiment of this application, the substrate 100 provided in this embodiment can be a sapphire substrate, a SiO2 composite substrate, etc., wherein the sapphire substrate can be an AlN-plated sapphire substrate, and further, the sapphire substrate can be a patterned sapphire substrate (PSS), and this application does not impose specific limitations on this. The first type semiconductor layer 210 can be an N-type gallium nitride layer, and the second type semiconductor layer can be a P-type gallium nitride layer.

[0051] Referring to Figure 2, which is a schematic diagram of another LED epitaxial structure provided in this application embodiment, the first multi-quantum well layer 310 provided in this application embodiment includes: an InxGa(Ix)N quantum well layer 311 and a first GaN quantum barrier layer 312 grown alternately in sequence. The number of growth cycles of the first multi-quantum well layer 310 (i.e., the cycle of growing one stack of InxGa(Ix)N quantum well layer 311 and first GaN quantum barrier layer 312) ranges from 1 to 4, and x can be 0.03 to 0.25. Optionally, within one growth cycle, the thickness of the InxGa(Ix)N quantum well layer 311 provided in this application embodiment ranges from 2 nm to 3 nm; the thickness of the first GaN quantum barrier layer 312 ranges from 10 nm to 17 nm. The peak wavelength range of the first multi-quantum well layer 310 provided in this application embodiment can be 430 nm to 480 nm.

[0052] Referring again to Figure 2, the second multi-quantum well layer 320 provided in this embodiment includes: an InyGa(Iy)N quantum well layer 321 and a second GaN quantum barrier layer 322 grown alternately in sequence. The number of growth cycles (i.e., the cycle of growing one stack of InyGa(Iy)N quantum well layer 321 and second GaN quantum barrier layer 322) of the second multi-quantum well layer 320 ranges from 6 to 15, and the value of y can be 0.01 to 0.15. Optionally, within one growth cycle, the thickness of the InyGa(Iy)N quantum well layer 321 provided in this embodiment ranges from 3 nm to 4 nm; the thickness of the second GaN quantum barrier layer 322 ranges from 8 nm to 12 nm. The peak wavelength range of the second multi-quantum well layer 320 provided in this embodiment can be 500 nm to 550 nm.

[0053] Furthermore, the relative light intensity modulation layer 400 provided in this application embodiment may include: a first GaN layer 410, an AlN layer 420, and a second GaN layer 430 grown sequentially. Optionally, the thickness of the first GaN layer 410 provided in this application embodiment ranges from 3nm to 6nm; the thickness of the AlN layer 420 ranges from 2nm to 5nm; and the thickness of the second GaN layer 430 ranges from 10nm to 15nm. The relative light intensity modulation layer 400, composed of the first GaN layer 410, AlN layer 420, and second GaN layer 430, which adds a high barrier between the band gaps of the first multiple quantum well layer 310 and the second multiple quantum well layer 320, especially the AlN layer 420 having a higher effective barrier height, is equivalent to increasing the energy barrier between the band gaps of the first multiple quantum well layer 310 and the second multiple quantum well layer 320. By adjusting the thickness of the relative light intensity modulation layer 400, the intensity of the energy barrier can be adjusted to regulate the effective recombination ratio of the band gaps of the first quantum well layer 310 and the second quantum well layer 320. At the same time, by adjusting the number of growth cycles in the first quantum well layer 310 and the second quantum well layer 320, the relative light intensity ratio of the first quantum well layer 310 and the second quantum well layer 320 can be adjusted, ultimately achieving the goal of improving the color gamut of the application-end electronic device.

[0054] Furthermore, the LED epitaxial structure provided in this application embodiment may also include more optimization layers to improve its growth quality and performance. Referring to Figure 3, which is a schematic diagram of another LED epitaxial structure provided in this application embodiment, the LED epitaxial structure provided in this application embodiment further includes: a buffer layer 510 located between the substrate 100 and the first type semiconductor layer 210; and / or, an undoped layer 520 located between the substrate 100 and the first type semiconductor layer 210, wherein when the LED epitaxial structure includes the buffer layer 510, the undoped layer 520 is located between the buffer layer 510 and the first type semiconductor layer 210; and / or, a stress relief layer 530 located between the first type semiconductor layer 210 and the first multiple quantum well layer 310; and / or, an electron blocking layer 540 located between the second multiple quantum well layer 320 and the second type semiconductor layer 220.

[0055] It should be noted that Figure 3 of this application is a schematic diagram illustrating an LED epitaxial structure including a buffer layer 510, an undoped layer 520, a stress relief layer 530, and an electron blocking layer 540. The LED epitaxial structure provided in this application embodiment may include any one or more combinations of the buffer layer 510, the undoped layer 520, the stress relief layer 530, and the electron blocking layer 540. Furthermore, the LED epitaxial structure provided in this application embodiment is not limited to the aforementioned buffer layer 510, undoped layer 520, stress relief layer 530, and electron blocking layer 540; it may also include more optimized structures, for which this application does not impose specific limitations. When the lattice constant difference between the epitaxial material grown on the substrate 100 and the substrate 100 is large, the buffer layer 510 can provide a process for gradually adjusting the crystal structure, effectively alleviating stress caused by lattice mismatch, preventing film cracking or microcracks, thereby reducing defects caused by direct growth and improving the crystal quality of the epitaxial structure. The undoped layer 520 can be an undoped gallium nitride layer. By adjusting the stress experienced during epitaxial growth, the warpage of the multi-quantum-well growth stage can be controlled, resulting in a smooth epitaxial structure surface and ultimately an LED epitaxial structure with good wavelength uniformity. The stress relief layer 530 can block the extension of bottom-layer derived dislocations, thereby improving the lattice quality of the upper layer. It can also reduce the density of penetrating dislocations, reducing the negative impact of dislocations on the LED epitaxial structure, and is beneficial to improving the internal quantum efficiency and luminous efficiency of the LED epitaxial structure. At the same time, the stress relief layer 530 can also enhance the lateral diffusion capability of current in the LED epitaxial structure, which is beneficial to improving the antistatic capability of the LED epitaxial structure. The electron blocking layer 540 can restrict minority carriers (electrons) from entering the active region, reducing nonradiative recombination of electrons and holes, which is beneficial to improving the luminous efficiency of the LED epitaxial structure. The electron blocking layer 540 also helps to improve hole injection efficiency, balance the number of electrons and holes, and further improve the luminous efficiency of the LED epitaxial structure. In addition, by reducing electron leakage, the electron blocking layer 540 can reduce the operating voltage of the LED epitaxial structure and save energy. Furthermore, by changing the band structure, the electron blocking layer 540 reduces the accumulation of electrons in the multi-quantum-well layer, avoiding the problem of efficiency degradation caused by excessively high electron concentration.

[0056] Based on the same inventive concept, this application also provides a preparation method for preparing the LED epitaxial structure of any of the above embodiments. Specifically, referring to Figure 4, a flowchart of a preparation method provided by this application is shown, wherein the preparation method includes:

[0057] S1. Provide a substrate.

[0058] S2. A first type semiconductor layer, a first multiple quantum well layer, a relative intensity modulation layer, a second multiple quantum well layer, and a second type semiconductor layer are sequentially stacked on one side of the substrate and along a direction perpendicular to the plane of the substrate. The first multiple quantum well layer and the second multiple quantum well layer have different bandgap widths; the relative intensity modulation layer is used to adjust the effective recombination ratio of the bandgap of the first multiple quantum well layer and the bandgap of the second multiple quantum well layer.

[0059] As can be seen from the above, in the LED epitaxial structure provided in this application embodiment, a first multi-quantum well layer and a second multi-quantum well layer with different bandgap widths are introduced between the first type semiconductor layer and the second type semiconductor layer, thereby enabling the LED epitaxial structure to achieve dual-band light emission. Furthermore, the dual-band light-emitting LED epitaxial structure provided in this application embodiment also needs to adjust the light intensity of the first multi-quantum well layer and the second multi-quantum well layer to a suitable relative ratio to improve the color gamut of the application-end electronic device. Therefore, in the LED epitaxial structure provided in this application embodiment, a relative light intensity adjustment layer is added between the first multi-quantum well layer and the second multi-quantum well layer to add an energy barrier between them. Then, by adjusting the intensity of the energy barrier, the effective recombination ratio of the bandgap of the first multi-quantum well layer and the bandgap of the second multi-quantum well layer is adjusted, thereby achieving the purpose of adjusting the relative ratio of the light intensity of the first multi-quantum well layer and the second multi-quantum well layer, ultimately achieving the purpose of improving the color gamut of the application-end electronic device.

[0060] Furthermore, the LED epitaxial structure provided in this application embodiment may further include more optimized layers to improve its growth quality and performance. Optionally, the LED epitaxial structure provided in this application embodiment further includes: a buffer layer grown between the substrate and the first type of semiconductor layer; and / or, an undoped layer grown between the substrate and the first type of semiconductor layer, wherein when the LED epitaxial structure includes the buffer layer, the undoped layer is located between the buffer layer and the first type of semiconductor layer; and / or, a stress relief layer grown between the first type of semiconductor layer and the first multiple quantum well layer; and / or, an electron blocking layer grown between the second multiple quantum well layer and the second type of semiconductor layer. It should be noted that the LED epitaxial structure described in this application embodiment includes any one or more combinations of buffer layer, undoped layer, stress relief layer and electron blocking layer. Moreover, the LED epitaxial structure provided in this application embodiment is not limited to the buffer layer, undoped layer, stress relief layer and electron blocking layer provided above, and may also include more optimized structures, which are not specifically limited in this application.

[0061] Taking an LED epitaxial structure comprising a substrate, a buffer layer, an undoped layer, a first type semiconductor layer, a stress-relieving layer, a first multiple quantum well layer, a relative light intensity modulation layer, a second multiple quantum well layer, an electron blocking layer, and a second type semiconductor layer as an example, the fabrication method is described in detail. The fabrication method provided in this application embodiment can employ MOCVD (Metal-organic Chemical Vapor Deposition) equipment, using trimethylgallium™Ga and triethylgallium™Ga as Ga sources, ammonia NH3 as an N source, trimethylindium™In as an In source, and trimethylaluminum™Al as an Al source, with H2 and N2 as carrier gases. The doping sources are silane SiH4 and magnesium ceroxide CP2Mg, respectively, and a graphite disk is used as the carrier disk. The fabrication method includes:

[0062] Step 1: Provide a substrate. Optionally, when the substrate is an AlN-plated sapphire PSS substrate, the temperature can be raised to 1050℃-1100℃, and H2 can be introduced for 3 minutes for hydrogenation treatment to remove impurities on the substrate surface and anneal the AlN-plated layer on the substrate.

[0063] Step 2: Grow a buffer layer on the substrate. A TMGa buffer layer is grown, with a thickness of 5nm-15nm and a growth temperature of 800℃-900℃.

[0064] Step 3: Grow an undoped layer on the buffer layer. A TMGa layer is introduced to grow an undoped layer, which is an undoped gallium nitride layer (i.e., a U-shaped gallium nitride layer). The thickness of the undoped layer can be 2000nm-3000nm, and the growth process temperature can be 1100℃-1150℃.

[0065] Step 4: Grow a Type I semiconductor layer on the undoped layer. Introduce TMGa and SiH4 to grow the Type I semiconductor layer. The Type I semiconductor layer can be an N-type gallium nitride layer, with a thickness of 1000nm-2000nm. The growth temperature can be 1060℃-1100℃, and the Si doping concentration can be 1E19 / cm³. 3 -3E19 / cm 3 .

[0066] Step 5: Grow a stress relief layer on the first type of semiconductor layer. Introduce TEGa, TMI, or SiH4 to grow the stress relief layer. The stress relief layer can be a low-concentration InGaN / GaN shallow well layer grown over 4-10 cycles (i.e., a stack of alternately grown InGaN and GaN layers). The thickness of the stress relief layer can be 40nm-120nm. The growth temperature of the shallow well can be 800℃-830℃, and the growth temperature of the barrier can be 870℃-920℃.

[0067] Step 6: Grow the first multiple quantum well layer on the stress relief layer. Introduce TEGa, TMI, and SiH4 to grow the first multiple quantum well layer. Grow 1-4 cycles of multiple quantum well layers alternating between InxGa(1-x)N quantum well layers and the first GaN quantum barrier layer. Within one growth cycle, the thickness of the InxGa(1-x)N quantum well layer can be 2nm-3nm, and the thickness of the first GaN quantum barrier layer can be 10nm-17nm.

[0068] Step 7: Grow a relative light intensity modulated layer on the first multiple quantum well layer. A TEGa and TMAl layer are introduced to grow the relative light intensity modulated layer. The relative light intensity modulated layer consists of a first GaN layer, an AlN layer, and a second GaN layer grown sequentially. The thickness of the first GaN layer can be 3nm-6nm, the thickness of the AlN layer can be 2nm-5nm, and the thickness of the second GaN layer can be 10nm-15nm.

[0069] Step 8: Grow a second multiple quantum well layer on the relatively light intensity modulated layer. Introduce TEGa, TMI, and SiH4 to grow the second multiple quantum well layer. Grow 6-15 cycles of multiple quantum well layers alternating between InyGa(1-y)N quantum well layers and second GaN quantum barrier layers. Within one growth cycle, the thickness of the InyGa(1-y)N quantum well layer can be 3nm-4nm, and the thickness of the second GaN quantum barrier layer can be 8nm-12nm.

[0070] Step 9: Grow an electron blocking layer on the second multiple quantum well layer. Introduce TMAl, TEGa, CP2Mg, or TMIn to grow the electron blocking layer. The thickness of the electron blocking layer can be 15nm-50nm, and the growth temperature can be 940℃-970℃.

[0071] Step 10: Grow a type II semiconductor layer on the electron blocking layer. Introduce TMGa and CP2Mg to grow the type II semiconductor layer. The type II semiconductor layer can be a p-type gallium nitride layer, with a thickness of 20nm-40nm. The growth temperature can be 950℃-980℃, and the Mg doping concentration can be 2E19 / cm³. 3 -1E20 / cm 3 .

[0072] Step 11: Perform cooling annealing to complete the growth process. Test the LED epitaxial structure, and fabricate and test the photoelectric parameters of the LED chip.

[0073] Based on the same inventive concept, embodiments of this application also provide an electronic device, which includes the LED epitaxial structure provided in any of the above embodiments. Optionally, the electronic device provided in embodiments of this application can be a backlight, and this application does not impose specific limitations on it.

[0074] This application provides an LED epitaxial structure, its fabrication method, and an electronic device, comprising: a substrate; a first type semiconductor layer, a first multiple quantum well layer, a relative light intensity modulation layer, a second multiple quantum well layer, and a second type semiconductor layer sequentially stacked on one side of the substrate along a direction perpendicular to the plane of the substrate; the first multiple quantum well layer and the second multiple quantum well layer have different bandgap widths; the relative light intensity modulation layer is used to adjust the effective recombination ratio of the bandgap of the first multiple quantum well layer and the bandgap of the second multiple quantum well layer.

[0075] As can be seen from the above, the technical solution provided in this application achieves the dual-band light emission effect of the LED epitaxial structure through a first multiple quantum well layer and a second multiple quantum well layer with different band gap widths. At the same time, by adjusting the effective recombination ratio of the band gaps of the first multiple quantum well layer and the second multiple quantum well layer through a relative light intensity modulation layer, the relative light intensity ratio of the first multiple quantum well layer and the second multiple quantum well layer is adjusted, thereby achieving the purpose of adjusting the relative light intensity ratio of the first multiple quantum well layer and the second multiple quantum well layer, and ultimately achieving the purpose of improving the color gamut of the application-end electronic device.

[0076] In the description of the embodiments of this application, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and other terms indicating the orientation or positional relationship are based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the embodiments of this application and simplifying the description, and are not intended to indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application.

[0077] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of embodiments of this application, "multiple" means at least two, such as two, three, etc., unless otherwise explicitly specified.

[0078] In the embodiments of this application, unless otherwise explicitly specified and limited, terms such as "installation," "connection," "linking," and "fixing" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection, an electrical connection, or a connection that allows communication between them; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components, unless otherwise explicitly limited. Those skilled in the art can understand the specific meaning of the above terms in this application according to the specific circumstances.

[0079] In the embodiments of this application, unless otherwise expressly specified and limited, "above" or "below" the second feature can mean that the first feature is in direct contact with the second feature, or that the first feature is in indirect contact with the second feature through an intermediate medium. Furthermore, "above," "on top of," and "over" the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply that the first feature is at a lower horizontal level than the second feature.

[0080] In the embodiments of this application, the terms "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., refer to specific features, structures, materials, or characteristics described in connection with that embodiment or example, which are included in at least one embodiment or example of this application. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples. Furthermore, without contradiction, those skilled in the art can combine and integrate the different embodiments or examples described in this specification, as well as the features of different embodiments or examples.

[0081] Although embodiments of this application have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting this application. Those skilled in the art can make changes, modifications, substitutions and variations to the above embodiments within the scope of this application.

Claims

1. An LED epitaxial structure, characterized in that, include: Substrate; A first type semiconductor layer, a first multiple quantum well layer, a relative light intensity modulation layer, a second multiple quantum well layer, and a second type semiconductor layer are sequentially stacked and grown on one side of the substrate along a direction perpendicular to the plane of the substrate. The first quantum well layer and the second quantum well layer have different band gap widths; The relative light intensity modulation layer is used to adjust the effective recombination phase ratio of the first multiple quantum well layer and the second multiple quantum well layer.

2. The LED epitaxial structure according to claim 1, characterized in that, The first multiple quantum well layer includes: An InxGa(Ix)N quantum well layer and a first GaN quantum barrier layer are grown alternately in sequence, wherein the number of growth cycles of the first multi-quantum well layer ranges from 1 to 4.

3. The LED epitaxial structure according to claim 2, characterized in that, The thickness of the InxGa(Ix)N quantum well layer ranges from 2nm to 3nm; The thickness of the first GaN quantum barrier layer ranges from 10 nm to 17 nm.

4. The LED epitaxial structure according to claim 1, characterized in that, The second multiple quantum well layer includes: The InyGa(Iy)N quantum well layer and the second GaN quantum barrier layer are grown alternately in sequence, wherein the number of growth cycles of the second multi-quantum well layer ranges from 6 to 15.

5. The LED epitaxial structure according to claim 4, characterized in that, The thickness of the InyGa(Iy)N quantum well layer ranges from 3nm to 4nm; The thickness of the second GaN quantum barrier layer ranges from 8 nm to 12 nm.

6. The LED epitaxial structure according to claim 1, characterized in that, The relative light intensity modulating layer comprises: a first GaN layer, an AlN layer, and a second GaN layer grown sequentially.

7. The LED epitaxial structure according to claim 6, characterized in that, The thickness of the first GaN layer ranges from 3nm to 6nm; The thickness of the AlN layer ranges from 2nm to 5nm; The thickness of the second GaN layer ranges from 10 nm to 15 nm.

8. The LED epitaxial structure according to claim 1, characterized in that, The LED epitaxial structure also includes: A buffer layer located between the substrate and the first type of semiconductor layer; And / or, an undoped layer located between the substrate and the first type of semiconductor layer, wherein when the LED epitaxial structure includes the buffer layer, the undoped layer is located between the buffer layer and the first type of semiconductor layer; And / or, a stress relief layer located between the first type of semiconductor layer and the first multiple quantum well layer; And / or, an electron blocking layer located between the second multiple quantum well layer and the second type of semiconductor layer.

9. A preparation method, characterized in that, The method for preparing the LED epitaxial structure according to any one of claims 1-8 includes: Provide a substrate; A first type semiconductor layer, a first multiple quantum well layer, a relative light intensity modulation layer, a second multiple quantum well layer, and a second type semiconductor layer are sequentially stacked and grown on one side of the substrate along a direction perpendicular to the plane of the substrate. The first quantum well layer and the second quantum well layer have different band gap widths. The relative light intensity modulation layer is used to adjust the effective recombination ratio of the band gap of the first multiple quantum well layer and the band gap of the second multiple quantum well layer.

10. An electronic device, characterized in that, The electronic device includes the LED epitaxial structure according to any one of claims 1-8.

Images