Method for converting a structure from an actual state into a target state, arrangement consisting of a substrate and a reaction layer, and apparatus for carrying out such a method

Abstract

The invention relates to a method for transferring a structure (2', 2), which is arranged on a substrate (1, 1') and / or which is embedded in the substrate (1, 1'), from an actual state into a target state, in particular before further processing, e.g. singulation or accommodation into a substrate holder (6), or / or before and / or during a bonding of substrates (1, 1'), comprising: - Providing a substrate (1, 1') having at least one structure (2', 2) in the actual state, - Providing at least one reaction layer (5r) which is integrated in particular into a layer system (3), - Implementing an operative connection between the at least one reaction layer (5r) and the substrate (1, 1') in such manner that a state of change in the at least one reaction layer (5r) causes a deformation in the substrate (1, 1'), - Triggering the state of change in the at least one reaction layer (5r) by means of an influencing means (8), wherein the state of change in the at least one reaction layer (5r) is induced in a locally limited manner such that the structure (2', 2) is transferred from the target state into the actual state.

Description

[0001] ■□I

[0002] Erich Thallner

[0003] MSP code: 43591 PT-WO PM / SK

[0004] Method for transforming a structure from an actual state to a desired state, arrangement of substrate and reaction layer and device for carrying out such a method

[0005] The present invention relates to a method for transforming a structure from an actual state to a desired state, an arrangement of substrate and reaction layer and a device for carrying out such a method.

[0006] In recent years, it has become necessary to produce highly precise lithographic structures. These structures are created using photolithography and / or imprint lithography. In imprint lithography, a die is pressed into an imprinting compound. After the die is formed, the negative of the die remains in the imprinting compound. The imprinting compound is cured during and / or after the imprinting process. With the help of imprint lithography, it has become possible in recent years to produce structures with nanometer-scale dimensions in the repeatable and highly precise manner.

[0007] These lithographic processes have made it possible in recent years to produce substrates with functional units of varying capabilities with high precision, reproducibility, and, above all, cost-effectiveness. Imprint lithography is increasingly replacing photolithography because it eliminates the need for expensive photomasks. The smaller the desired feature sizes, the more complex the calculation of the photomasks becomes. In imprint lithography, a hard die is produced once using an electron beam printing process. From this hard die, also called a master die, thousands of soft dies can then be produced, which are used for the embossing process of the embossing compound.

[0008] The main challenge in lithography lies in ensuring that the resulting structures are free of errors, defects, and, above all, distortion. Error-free means that the structure should be produced exactly as intended. Defect-free means that the structure must not have any defects. A defect would be present, for example, if a lithographically produced bridge were interrupted in the middle. Distortion-free, on the other hand, means that the structures must not exhibit any shearing, rotation, or stretching. The distortion problem becomes more pronounced the smaller the structures to be produced. It is noteworthy that lithography itself is not necessarily the cause of distortion. Distortion of a lithographically produced structure can also occur through process steps that precede or follow the lithography process.

[0009] The biggest problem, and thus a task of this invention, is that, in general, neither the substrates nor the functional units produced by lithography can be manufactured without defects, in particular without distortion, or they change during other process steps and deviate from the desired target shape, i.e., more generally, a target state. These deviations may only be in the micrometer range or even, in some cases, only in the nanometer range, but they nevertheless have an impact on the ability to precisely superimpose further lithographic layers onto existing structures or to precisely bond two wafers together.

[0010] The present invention solves the problem with a method according to claim 1, with an arrangement according to claim 14, and with a device according to claim 15. Advantageous embodiments of the invention are specified in the dependent claims. The scope of the invention also includes all combinations of at least two features specified in the description, in the claims, and / or in the drawings. Where specified value ranges are given, values ​​lying within the stated limits are also considered disclosed limits and may be claimed in any combination.

[0011] According to a first aspect of the present invention, a method for transferring a structure produced by lithography, which is arranged on and / or embedded in a substrate, wherein the structure is produced by a lithography process or is used in the lithography process, for example a structure produced by lithography in a varnish or embossing compound, from an actual state to a desired state is provided, in particular before further processing, such as a development process, an etching process, a curing process of an embossing compound, a singulation or pick-up by a substrate holder, and / or before and / or during a bonding of substrates, comprising:

[0012] Providing a substrate with at least one structure in its current state, providing a reaction layer, in particular integrated into a layer system, @

[0013] Realizing an active connection between the at least one reaction layer and the substrate, wherein the active connection is designed such that a change state in the at least one reaction layer causes a deformation in the substrate,

[0014] Triggering the change state in the at least one reaction layer by means of an influencing agent, wherein the change state in the at least one reaction layer is locally limited in such a way that the structure is transformed from the actual state to the target state.

[0015] In the remainder of the text, a structure is understood to mean either a lithographically produced structure or a structure generated by this lithographic structure.

[0016] In a first example, a photoresist could be deposited as a layer on a substrate. The photoresist is masked and exposed using a photolithography system. The masking means that not all parts of the photoresist are exposed. For the sake of clarity, the distinction between positive and negative resists is omitted. The exposed areas, which represent the photolithographically produced structures, may already be distorted and require correction using the appropriate process. It is also conceivable that the exposed photoresist is developed, and distortion occurs during development. Similarly, the photoresist is stripped, and distortion occurs during the stripping process.

[0017] It is also possible that the substrate was fixed in a substrate holder before the photoresist was deposited, thus distorting it. The photoresist is correctly deposited, exposed, developed, and stripped without distortion; however, the substrate is elastically deformed during fixing and, after the fixative is removed, returns to its original state, thereby subsequently distorting the photolithographically produced structures in the photoresist, even though their creation was error-free and distortion-free as long as the substrate was fixed to the substrate holder.

[0018] Similar considerations apply to an embossing compound that has been embossed by imprint lithography. The embossing process itself can lead to distortion of the lithographically produced structures. It is conceivable that the lithographically produced structures are distorted during the curing process of the embossing compound. Furthermore, it is conceivable that when the substrate is released from the substrate holder, the substrate returns to its original state due to an elastic prestress, thus subsequently distorting the otherwise correctly embossed and cured structures.

[0019] Experts in this field understand that there are countless ways in which photolithographically produced structures can deviate from their desired target state. Furthermore, it is known that many photolithographic structures serve as the starting point for creating the actual structures within a substrate.

[0020] The masked, developed, and stripped photoresist mentioned in the previous example can serve, for instance, as an etching mask, doping mask, or deposition mask. Therefore, if the lithographically created structures are in a state that does not correspond to their intended state, this directly affects all subsequent process steps and all resulting structures.

[0021] In particular, there is the general problem that any type of process step can lead to distortion. Such distortion then results in a subsequent lithography step, even if performed correctly and not itself distorted, producing a lithographic structure that is no longer functionally connected to the underlying, distorted structure. In technical terms, this is referred to as an inaccurate overlay. The lack of, or at least degraded, overlay accuracy can then lead to a defect in a functional unit, such as a chip.

[0022] Another problem arises in the exposure of substrates with, especially undesirable, topography. In optical lithography, lithography systems with high numerical aperture may not always be able to optimally expose the structure to be imaged from the mask onto the photoresist, as individual areas of the exposure field lie outside the ideal depth of focus, resulting in a blurred image. In this case, it is advantageous for the reaction layer to be located as close as possible to the photoresist being exposed. This allows the reaction layer to act on the photoresist very efficiently and over short distances.

[0023] The structure and substrate can be integral or formed as a single piece.

[0024] Since the process can generally influence and alter any type of structure, the following text will no longer distinguish between lithographically generated structures and those potentially generated from lithographic structures. It is also specifically noted that imprint lithography can not only generate lithographic structures from which other structures emerge, but the lithographic structures of an imprint lithograph can themselves be permanent structures. For example, a microfluidic device could be created and cured using imprint lithography.

[0025] In contrast to the prior art, this approach proposes transforming a non-ideal substrate with a structure in its existing state into a desired target state through actively induced rectification. A reaction layer is used for this purpose, preferably integrated into a layer system. The reaction layer or the layer system is preferably located on and / or within the substrate. In other words, it is proposed to reverse an undesired distortion by acting on the reaction layer, i.e., to rectify or distort the structure in or on the substrate. It proves particularly advantageous that the influencing agent does not act on the substrate itself, but rather on the reaction layer. This allows, for example, any negative impact of the influencing agent on the substrate to be avoided or reduced.

[0026] In particular, a substrate or a substrate stack can have more than one layer system. It is conceivable that a first layer system is located on the back side of a substrate and that global, strong active compounds are generated via this layer system, while a further layer system located on the opposite side of the substrate, particularly near structures, allows the generation of local active compounds. Preferably, the substrate comprises a layer system formed on the back side of the substrate and / or a further reaction layer, particularly as part of another layer system or as a single layer, which is spaced from the back side and, for example, arranged within the substrate. The back side of the substrate faces the side with the structure.Preferably, the ratio between the distance of the reaction layer to the back side and the total thickness of the substrate is such that it assumes a value between 0.2 and 0.87, preferably between 0.3 and 0.87, and most preferably between 0.5 and 0.87.

[0027] In special embodiments, the reaction layer is located less than 50 pm, preferably less than 25 pm, most preferably less than 1 pm, most preferably less than 500 nm, and most preferably less than 100 nm away from the structures to be influenced.

[0028] The subsequent layer system is therefore arranged close to the side of the structure without contacting it.

[0029] By means of an influencing agent, such as a laser and / or an electric field, the reaction layer is locally altered physically and / or chemically at desired locations in such a way that this alteration results in a correction that restores the desired state of the substrate. This achieves the creation of a desired target state. For the first time, this makes it possible to selectively and, in particular, permanently adjust deviations in the micro- and / or nanometer range between the actual state and the target state, thus providing an ideal starting point for further process steps or treatment.

[0030] The functional connection between the reaction layer and the substrate can be direct or indirect, for example, via an intermediate layer. It is conceivable that a functional connection between the substrate and the reaction layer exists via a bond. It is also conceivable that the reaction layer has grown on the substrate, for example, by means of epitaxy. In particular, the functional connection is designed to transmit mechanical stresses and / or shear forces to the substrate. It is especially preferred that the reaction layer acts on the outer surface or side surface opposite the structure. In other words, the deformation caused by the reaction layer on a side opposite the structure is transmitted via the substrate and leads to a stress-relieving effect on the side surface where the structure is located.The substrate thus transmits the deformation caused by the reaction layer. This also applies analogously to a further reaction layer that is arranged within the substrate.

[0031] The effective distance of the reaction is preferably as small as possible. In particular, the effective distance is less than 1 mm, preferably less than 1 pm, and even more preferably less than 1 nm. This preferably small effective distance is achieved by positioning the layer system, and especially the reaction layer, as close as possible to the substrate surface to be modified. The reaction in the reaction layer can lead to elastic and / or plastic deformation along the effective connection. Elastic deformation is preferred. A suitable choice of substrate, especially its thickness, enables precise control of the deformation while simultaneously protecting the substrate and the structure.Advantageously, the reaction layer, particularly in the form of a solution layer, can also be embedded in materials that possess sufficient elasticity to allow deformation (without brittle fracture) in the event of partial disruption of the reaction layer. In particular, it is provided that the distance between the layer system or the reaction layer and the structure is less than 50 pm, preferably less than 25 pm, even more preferably less than 1 pm, most preferably less than 500 nm, and most preferably less than 100 nm.

[0032] To determine the position and required intensity with which the reaction layer acts on the substrate, or with which the influencing agent acts on the reaction layer, the person skilled in the art preferably uses empirical data and / or simulations that also take into account, for example, the thickness of the substrate and / or the type of bond between the structure and the substrate, or, if applicable, between the reaction layer and the substrate. Preferably, a machine learning algorithm trained on test data is used to determine the intensity, extent, position, and / or type of influence exerted on the reaction layer by the influencing agent. It is also conceivable that different influencing agents are provided and / or used to induce the desired state of change in the reaction layer.

[0033] In particular, after each application of the influencing agent to the reaction layer, preferably even during the application, the substrate surface is measured in order to assess and document the success of the application and, based on this, to improve the application. Preferably, a control loop can be created by combining the observation, especially in-situ, with the application. However, it is also conceivable that the substrate surface is measured only once before the application to the reaction layer and that the application to the reaction layer is controlled solely based on this data, thus eliminating the need for any control mechanism.

[0034] In particular, a substrate is understood to be either a large-area substrate, especially a wafer, or a single, functional unit produced from a large-area substrate, i.e., a die, chip, chiplet, etc. If a reaction layer is mentioned, it is to be understood as the at least one reaction layer.

[0035] In particular, a locally confined state of change is understood to be one whose lateral extent in a plane parallel to the principal extension plane is smaller than the lateral extent of the structure measured parallel to the principal extension plane. It is preferably provided that the ratio between the lateral extent of the state of change and the lateral extent of the structure assumes a value less than 1, preferably less than 0.8, and most preferably less than 0.6. This allows for targeted counteracting of distortion in specific areas, especially if the distortion does not extend over the entire structure.

[0036] In mechanics, displacement is understood as the difference between the positions of a considered volume element, or in the extreme case, a point, between two different states. A multitude of such displacements for different spatial positions results in a displacement field.

[0037] Distortion is defined as the change in displacement with respect to location. Therefore, if the displacement of a body along a line is always constant, its distortion along that line is zero.

[0038] In this context, a strict distinction between displacement and distortion will no longer be made unless explicitly stated. The goal is always to create a desired state from the current state. However, these terms are familiar to those skilled in the field of elasticity theory. The substrate to be corrected can also be understood as the product substrate, since functional units for a final product are preferably produced on it.

[0039] Preferably, the modification is achieved by locally changing the volume and / or lattice structure of the at least one reaction layer and / or by generating a locally confined gas bubble within the at least one reaction layer. In one embodiment, the action of the influencing agent causes a volume change, i.e., a volume contraction or volume expansion, of the layer. Preferably, the volume change occurs through thermal expansion.

[0040] Another possibility is that heat input from the influencing agent causes a reaction layer to expand significantly, thereby generating internal stresses that in turn plastically deform another reaction layer.

[0041] The individual reaction layers can therefore influence each other. By correctly structuring the layer system through the selection and / or sequence of the appropriate reaction layers, the layer system itself becomes an important factor influencing the success of equalization through the application of an influencing agent.

[0042] It is also conceivable that the reaction layer is subjected to an electric and / or inductive magnetic field, thus inducing a change in the reaction layer. It is also conceivable that the reaction layer is subjected to mechanical forces, for example, vacuum fixation. In one embodiment, the action of the influencing agent causes a solid-state phase transformation. This solid-state phase transformation can be accompanied by a change in volume.

[0043] In one embodiment, the action of the influencing agent causes a phase transformation through melting and / or solidification. The influencing agent facilitates a transition from the solid to the liquid phase. In particular, by selecting a suitable layer combination, an alloy can be created that, upon solidification, again undergoes a volume change. By selectively choosing the alloying elements in the different layers of the layer system, it is possible to control volume contraction or expansion, depending on whether the resulting alloy has a smaller or larger molar volume than the phases of the individual layers. However, the phase transformation to a melt can itself produce the desired volume contraction or expansion, achieving the desired effect.

[0044] In one embodiment, the action of the influencing agent causes a phase transformation through sublimation and / or resublimation. A local, spontaneous sublimation of the solid material is conceivable, followed by bubble formation, particularly gas bubble formation. The resulting gas bubble can, for example, be confined to a local area by overlying and / or underlying layers that are less sensitive to the influencing agent. In particular, the gas bubble formation is accompanied by a change in volume, preferably an increase in volume.

[0045] In one embodiment, the influence of the influencing agent causes a phase transformation between an amorphous and a crystalline phase. Preferably, an amorphous phase exists in a metastable state and is crystallized by the influencing agent, in particular a laser beam. However, it is also conceivable that the influencing agent, in particular an ion beam, amorphizes a crystalline phase.

[0046] Furthermore, it is preferably provided that the influencing agent alters a material state, for example, a phase and / or lattice structure change, in the reaction layer. It is also conceivable that partial liquefaction of the reaction layer eliminates shear forces in the liquefied area, while shear forces or mechanical stresses persist in other areas, thereby generating a new mechanical stress state in the substrate that contributes to or causes the straightening of the structure.

[0047] Preferably, the layer system is formed from at least one reaction layer and at least one release layer. The layer system comprises at least the reaction layer. If, for example, the substrate is bonded to a support substrate, the layer system preferably has at least one release layer that can be used in a subsequent process step to release the substrate from the support substrate. Such a release layer was disclosed, for example, in WO 2023 179 868 A1, the disclosure of which, with regard to the layer system, in particular the release layer, is explicitly referenced here.

[0048] The solvent layer of the layer system preferably comprises at least one material from one of the following material classes:

[0049] • Dielectric, in particular o Nitrite, in particular

[0050] ■ TiN, CrN, TaN, AIN, NiN, Si3N4o Carbide, especially carbon layers o Carbonitride, especially @

[0051] ■ SiCN oxide and / or polymer and / or

[0052] • Electric medium, preferably metal, in particular

[0053] ■ Cr, Al, Ta, Co, Ni, Mn, Fe, Au, Ga, Sn, Ge, W, Cu, In

[0054] All subsequent layers of the layer system serve to generate a physical and / or chemical reaction in order to produce the corresponding equalization. Layers that can induce a physical and / or chemical reaction to produce the corresponding equalization are referred to as reaction layers.

[0055] A particular advantage is that the reaction layer also serves as the solvent layer, meaning that the materials used in the solvent layer can also be considered suitable for the reaction layer. Nitrides, in particular, are especially well-suited for gas bubble formation. However, the range of usable materials for the reaction layer can be further expanded with regard to their physical properties, resulting in additional material classes or materials:

[0056] • Material with a low melting point, for example less than 700°C, preferably less than 500°C, even more preferably less than 300°C, most preferably less than 200°C and most preferably less than 100°C, in particular low-melting metal, in particular

[0057] ■ AI, Sn, In, Ga

[0058] • Material with a high coefficient of thermal expansion, especially greater than 4x10 -6 1 / K, preferably larger than 10x10-6 1 / K and especially preferably larger than 25x10' 6 1 / K, such as Zn, Al, Sn, Ag, Cu, Au

[0059] Preferably, the layer system comprises several different reaction layers. This advantageously allows for influencing the interaction between the reaction layer and the substrate. Furthermore, it enables greater flexibility in the selection and design of the influencing agent. For example, it is possible to utilize the influence of different influencing agents to induce a preferred and particularly favorable state of change in the reaction layer(s), i.e., in the layer system.

[0060] Each reaction layer can preferably be sequentially activated by an influencing agent. Particularly when using a laser as the influencing agent, achieving selectivity by using a different wavelength and / or intensity and / or pulse length and / or polarization and / or focal point is relatively straightforward.

[0061] Each reaction layer can be prestressed by introducing residual stresses. These can be compressive and / or tensile residual stresses, which may be inhomogeneously distributed within the reaction layer or even generated only at specific points.

[0062] Preferably, the influencing agent affects several or all reaction layers simultaneously at one position, i.e., in a locally limited area.

[0063] Preferably, the change state is intended to be temporary. It has been found that for the desired state, it is sufficient if the modified state is maintained only until a further processing step, such as bonding, is performed. This allows for greater flexibility in how the change state is achieved. It does not need to involve permanent plastic deformation. Preferably, the change state is maintained until the further processing is carried out or the bonding is completed. The change state, once initiated, can have a corresponding half-life, i.e.,Although they can generally be terminated independently after an initiation, the half-life is long compared to the time until the next processing step, and / or the change state is maintained by repeated initiation at least until the next further processing step.

[0064] In an improvement of the aforementioned embodiments, a further layer, particularly one that is easily plasticizable, is deposited above the reaction layer. Due to the changes in the reaction layer, the easily plasticizable layer is plastically deformed and can thus retain its deformation even after the removal of the influencing agent.

[0065] This means that it is no longer necessary for a possible follow-up process or further treatment to take place within a specific time interval.

[0066] Preferably, the reaction layer is formed continuously beneath the structure or beneath several structures. This allows, for example, the locally limited change state to be initiated at any position beneath the structure(s).

[0067] Preferably, the substrate and the reaction layer are arranged on a support substrate and / or a substrate holder. This presents corresponding challenges for the influencing agent. Accordingly, the support substrate and / or the substrate holder are adapted to the influencing agent. For example, a suitable material is selected to allow a certain degree of transparency. It is also conceivable that a two-dimensional arrangement of heating elements is formed in the substrate holder, with which the reaction layer can be selectively thermally influenced.

[0068] In particular, it is provided that light from a laser source and / or an electric field is used as the influencing agent. It is preferably provided that the light is guided through a substrate holder that is at least partially transparent, preferably completely transparent, and / or a support substrate that is at least partially transparent, preferably completely transparent.

[0069] If the substrate holder and / or the support substrate and / or the product substrate is a silicon substrate, then the laser wavelength should be between 1 pm and 10 pm, as silicon has a very high transmittance (transmittance) of up to 50% in this wavelength range. If other substrates are used, it may be necessary to select a laser with a different wavelength.

[0070] In particular, it is provided that laser light, especially pulsed laser light, is used for separation. The laser light preferably lies in the infrared or ultraviolet region of the electromagnetic spectrum. In a preferred embodiment of the method, the laser beams have a wavelength between 0.1 pm and 500 pm, preferably between 0.2 pm and 100 pm, more preferably between 0.3 pm and 50 pm, most preferably between 0.5 pm and 10 pm, and most preferably between 1 pm and 2.5 pm. In this way, the separation layer can be irradiated particularly efficiently and precisely. The substrate is preferably transparent to the laser beams.

[0071] In a preferred embodiment of the method, the pulse energy of the laser beams is between 0.01 pJ and 128 pJ, preferably between 0.125 pJ and 64 pJ, more preferably between 0.25 pJ and 32 pJ, most preferably between 0.5 pJ and 16 pJ, and most preferably between 1 pJ and 8 pJ. It has been found that damage to the product substrate can be avoided with these pulse energies.

[0072] In a preferred embodiment of the method, the pulse duration of the laser beams is between 1 ps and 1 ps, preferably between 100 ns and 1 ps, more preferably between 1 ns and 1 ps, most preferably between 500 ps and 1 ps, and most preferably between 50 ps and 1 ps. This pulse duration allows for targeted application for separation.

[0073] In a preferred embodiment of the method, the laser cross-sectional area (spot size) is provided to be smaller than 2,000 pm. 2 , preferably smaller than 500 pm 2 , preferably smaller than 80 pm 2 , preferably smaller than 20 pm 2 , preferably smaller than 1 pm 2 This is possible. A small laser area can increase the resolution of the effect on the reaction layer.

[0074] In one embodiment, the influencing agent acts on the reaction layer in a spatially and preferably temporally modulated manner. This allows for different degrees of influence of the influencing agent on the reaction layer to be set, thereby enabling targeted spatial resolution during the transition from the actual state to the desired state. For example, it would be conceivable to use various optical systems, in particular optics and / or adjustable optics (such as two lenses whose distance from each other is changed), which result in different sizes of the laser spot being projected onto a focal plane, especially a reaction layer. Furthermore, the distance (pitch) between individual spots can be varied. Additionally, the spots can be positioned precisely.One possibility is to simultaneously expose different areas of the reaction layer with multiple beam paths, each preferably processed or manipulated differently to exert a targeted inhomogeneous effect on the reaction layer. This allows for the simultaneous induction of effects of varying magnitudes within the reaction layer. It is also conceivable that properties of the laser light, such as its degree of focus or spot size within the reaction layer, can be modified during a single pass or for different areas of the reaction layer. For example, one or more lenses can be moved to precisely control the extent of the laser light's effect on the reaction layer, particularly with spatial resolution.

[0075] In a preferred embodiment of the method, the distance between the laser beams' areas of effect on the reaction layer is at least 0.1 pm, preferably at least 1 pm, more preferably at least 5 pm, even more preferably at least 10 pm, and most preferably at least 50 pm, so that the laser beam areas do not overlap. This allows for particularly simple and efficient manipulation of the reaction layer and generation of reactions with correspondingly high resolution. In particular, short lever distances or effective distances are achieved, which in turn enables high spatial resolution for deformations. In certain exceptional cases, however, an overlap of the areas of effect may also be desirable.

[0076] The laser is optimized for the lowest possible energy input, so that apart from the desired reaction in the reaction layer, no further damage occurs, in particular no damage to the product substrate.

[0077] The laser parameters can be selected such that only partial disruption occurs in the layer system, particularly in the reaction layer and / or the solution layer. The resulting distortions nevertheless lead to deformation of the wafer.

[0078] The influencing agent preferably does not act on the layer system through the substrate surface of the substrate to be distorted, which contains the structures, but rather from the back side. However, if the substrate to be distorted is thin enough and transparent enough for the influencing agent, then influencing the layer system through the substrate to be distorted is conceivable and possible. Arranging the reaction layer on the side surface of the substrate opposite the structure proves particularly advantageous because it simplifies the application of the influencing agent. For example, the structure does not impair the influencing agent. Furthermore, there are fewer limitations with regard to the properties of the substrate, for example, with regard to the transparency of the substrate to a specific type of light that is absorbed by the reaction layer to induce the change.

[0079] In particular, it is conceivable that the influencing agent alters the material composition in the at least one reaction layer. For example, a chemical reaction is induced by the influencing agent, such as between materials of adjacent reaction layers or between different materials in the same reaction layer. Preferably, an alloy is formed. It is conceivable, for example, that a reaction layer is at least partially, and especially regionally, liquefied by the influencing agent and forms an alloy with the material from another reaction layer through diffusion.

[0080] It is particularly preferred that the change state in the reaction layer is induced by means of a further influencing agent in the material composition. By using a multi-stage process with several influencing agents, flexibility in adapting the excitation state is possible.

[0081] It is conceivable, for example, that an alloy is only formed through the local solid-liquid phase transition determined by the influencing agent, and that this alloy can then be influenced by further influencing agents, particularly electric and / or magnetic fields. Thus, it is conceivable that in a first process step, the influencing agent creates a corresponding alloy at well-defined positions, which, in subsequent process steps, then causes contraction or expansion due to its phase properties.

[0082] The method is preferably applied before further processing of the substrate. However, for large-area substrates, especially wafers, a particularly preferred embodiment allows the method to be applied before, and especially immediately before, during, or after a lithography process. By applying the method during and / or after lithography, displacements or distortions caused by the lithography itself, particularly by incorrectly calculated, poorly produced, and / or dirty masks or dies, or masks limiting the diffraction limit, can be actively compensated by introduced distortions. It is also conceivable to apply the method before lithography to prepare the substrate for lithography. The substrate with the structure intended for the lithography process may, for example, already exhibit distorted structures.Further process steps using lithography are intended to create new structures on top of the existing ones. The substrate can then be brought to an optimal initial state before the lithographic process steps are carried out. In particular, this method is used to ensure that a lithographically created structure achieves a desired target state.

[0083] In particular, it may also be desirable to adjust the target state of a lithographic structure so that features of the lithographic structure are identical to features of a structure already present on the substrate, even if the structures themselves appear distorted in relation to a rectangular coordinate system. The target state, therefore, always refers to a desired state. The two target states resulting from the actual states are preferably identical after the process has been applied to both substrates. The target state, therefore, always refers to a desired state that does not necessarily represent a complete, theoretically optimal state. The target state serves, in particular, the purpose of ensuring the reliability of a subsequent process. For this to be possible, the structure must assume a state that is meaningful for the subsequent process, which may, if necessary,depends on other characteristics or properties that are not present on the substrate, but on another substrate or a tool.

[0084] The process is specifically designed to transform a lithographically generated actual state into a target state. This can be used, in particular, to compensate for or completely eliminate lithographic errors.

[0085] The method can also be used to compensate for unevenness and waviness on the substrate. A flatter substrate surface allows for a more precise definition of the focal plane for subsequent exposure, particularly EUV exposure. Specifically, the minimum spot size or extent of the focus (the direction of laser light propagation at the focus) can be further reduced, enabling higher spatial resolution. Furthermore, other imaging errors are reduced. For EUV exposure in particular, the focal plane, and thus the substrate surface, must be defined as precisely as possible. This avoids unwanted scattering effects and deflections. It is also possible to raise the substrate surface, particularly selectively in the z-direction, by more than 10 nm, preferably more than 50 nm, even more preferably more than 100 nm, most preferably more than 500 nm, and most preferably by up to 1 pm.This aspect is particularly important for the latest generation of EUV systems with high numerical aperture (NA). Another advantage of the process is that, ideally, neither the product substrate nor the support substrate is damaged.

[0086] Another advantage is the low temperature input, particularly for the product substrate. The resulting temperatures are preferentially concentrated within the layer system. In particular, the pulsed and highly focused laser largely prevents a significant temperature increase in the product substrate.

[0087] A further object of the present invention is an arrangement comprising a substrate with a structure in its current state and at least one reaction layer, in particular integrated into a layer system, for carrying out a process according to the invention. All advantages and properties described for the process can be transferred analogously to the arrangement and vice versa.

[0088] A further object of the present invention is a device for carrying out the method according to the invention, wherein the device comprises at least one influencing means. All advantages and properties described for the method according to the invention can be transferred analogously to the device and vice versa.

[0089] The following describes a process as it is carried out in a semiconductor factory (fab).

[0090] In a first process step, data describing the current state of a substrate, particularly in the form of a lithographic structure in a layer deposited on the substrate, are measured and provided. This provision can be achieved via software and / or hardware. The data preferably consists of position and / or displacement and / or distortion maps, which will be referred to simply as "data" from this point forward. The substrates are preferably measured using an interferometer, especially a Fizeau interferometer, which enables the measurement of the substrate's flatness with nanometer precision. Ideally, the measurement is performed simultaneously with one Fizeau interferometer on the front side and another on the back side. This allows the freeform of the substrate to be determined with high reliability.Bending of the substrate indicates mechanical stress within the substrate, which results in distortion of the structures. In a second process step, the actual state is compared with a target state, also stored in a computer. The target state is likewise represented by data.

[0091] In a third process step, the necessary processing steps are calculated and determined in order to achieve the desired target state.

[0092] In a fourth process step, the system as described here and the described method for transitioning the substrate from its current state to the target state are used to bring the current state as close as possible to the desired target state. Tolerance and threshold values ​​are permitted. The process does not necessarily have to be carried out until the current state perfectly matches the target state, but it should come as close as possible. The goal is to minimize deviations between the target and current states. In this process step, in-situ observation of the current state is optional. It is possible that the device generating the distortions does not have the necessary monitoring capabilities to track the current state. In this case, the process is more controlled than regulated. Advantageously, however, the device has an optical system for in-situ observation.

[0093] In a fifth, optional step, the newly achieved current state can be measured again. This measurement can be performed with a different device and / or method, in the same device / cluster where the previous steps were carried out, in a different device / cluster, or even in a different country.

[0094] In a sixth, optional step, the current state is compared again with the target state. From this point onward, a decision is made whether to proceed back to the first step. If the process continues from the first step, a loop is initiated that only ends when the result of the sixth step is satisfactory. This loop can therefore be executed multiple times.

[0095] In a seventh process step, the substrate, now brought to the desired target state, is processed using a different method. One possibility would be the deposition of an @

[0096] Photoresist, followed by exposure, development and / or stripping or embossing with an imprinting compound using the die of an imprinting machine.

[0097] In an eighth process step, the result of the seventh process step is verified and evaluated. Since the substrate (lithography) thus produced can be further processed, a restart of the first three process steps is necessary, depending on how much data is already available about the substrate stack or the substrate itself. In particularly preferred cases, this process step is already carried out during the execution of the seventh process step in the processing plant. A preferred embodiment is that a lithography system, in particular an EUV system, measures the substrates during the alignment process before the exposure step.

[0098] The data obtained in at least one process step can be used to improve the processing of subsequent substrates. For example, it would be conceivable to use the data from at least one of the preceding process steps, particularly steps five and six, directly to transform the new or subsequently processed substrate into a desired target state in a fourth process step. This would eliminate at least some of the preceding process steps and thus accelerate the process.

[0099] The device can also be part of a plant system. A plant system consists of at least one cluster, which in turn consists of at least one device.

[0100] In a first embodiment, the plant system consists of only a single cluster.

[0101] • Cluster

[0102] • Surveying device

[0103] • Device for transferring the substrate from its current state to its target state

[0104] • Lithographic apparatus or other apparatus for carrying out further process steps

[0105] • Debond device In this embodiment, all devices are grouped in the same location, in the same cluster.

[0106] In a second embodiment, the plant system consists of three clusters. The clusters can be geographically far apart, particularly in different countries, or located at different positions within a semiconductor plant.

[0107] • Cluster 1 o Surveying device

[0108] • Device for transferring the substrate from its current state to its target state

[0109] • Cluster 2 o lithography apparatus or other apparatus for carrying out further process steps

[0110] • Cluster 3 or Debond device

[0111] This embodiment has the same number of devices as the first embodiment, however, the devices are grouped into clusters and these are distributed geographically.

[0112] In a third embodiment, the plant system also consists of three clusters.

[0113] • Cluster 1 o Surveying device

[0114] • Device for transferring the substrate from its current state to its target state

[0115] • Cluster 2 o lithography apparatus or other apparatus for carrying out further process steps

[0116] • Cluster 3 o Debond device o Surveying device

[0117] The third cluster also has a surveying device.

[0118] In a fourth embodiment, the plant system consists of four clusters.

[0119] • Cluster 1 o Device according to the invention

[0120] • Cluster 2 o lithography apparatus or other apparatus for carrying out further process steps

[0121] • Cluster 3 o Surveying device

[0122] • Cluster 3 or Debond device

[0123] In particular, it is intended that measuring devices will be used to determine information about the current state and, in particular, to transmit this information to a subsequent processing system. The measuring device can be integrated into a processing system that is upstream of the subsequent processing system. For example, the subsequent processing system could be a lithography system or a debonding system. This allows for the advantageous exchange of information about the current state between different processing systems.

[0124] Preferably, in a preparatory process step, the shape of the substrate, in particular a freeform substrate, or an overlay is determined, especially by measurement in a measuring device. Subsequently, in a first device, a processing unit, a measuring device, and / or a lithography unit, the structure is transformed from a target state to the actual state. Following this, the substrate is measured and exposed in the lithography unit. The measurement data or information acquired subsequently or during this process can be provided to a subsequent processing unit, for example, a debonding unit, and / or for processing a subsequent substrate in the same processing unit.

[0125] In a fifth embodiment, the plant system consists of five clusters.

[0126] • Cluster 1 o Measuring device, in particular with a system for measuring the freeform of the substrates and / or o Measuring device, in particular for overlay measurement

[0127] • Cluster 2 o Inventive device @

[0128] • Cluster 3 o Lithography device or other device for carrying out further process steps and / or o Surveying device, in particular for overlay surveying

[0129] • Cluster 4, Optional or Further substrate processing

[0130] • Cluster 5, Optional o Debond device

[0131] In a fifth embodiment, the plant system consists of four clusters.

[0132] • Cluster 1 o Measuring device, in particular with a system for measuring the freeform of the substrates and / or o Measuring device, in particular for overlay measurement o Device according to the invention

[0133] • Cluster 2 o Lithography device or other device for carrying out further process steps and / or o Surveying device, in particular for overlay surveying

[0134] • Cluster 3, Optional or Further substrate processing

[0135] • Cluster 4, Optional o Debond device

[0136] The functions of the aforementioned devices are as follows.

[0137] The measuring device is designed to measure a substrate and / or a substrate stack before, during, and / or after any process step. Measurement is preferably optical, but can also be performed acoustically or by tactile measurement (AFM). Preferably, measurement is carried out using a Fizeau interferometer and / or light field measurement, for example with a device from Wooptix, and / or deflectometry and / or IR depolarization.

[0138] The device for transferring the substrate from the actual state to the desired state is understood to be the device described here, which is capable of carrying out the process for transferring the substrate from the actual state to the desired state by means of an influencing agent on a reaction layer.

[0139] A lithography device is a device capable of creating structures in a layer or imprinting compound. It can therefore be a photolithography system or an imprint lithography system.

[0140] A debonding device is understood to be a device with which it is possible to separate a substrate or a substrate stack. The debonding device can, in particular, be identical to the device according to the invention. In this case, the layer system of the substrate or substrate stack would contain not only a reaction layer but also a release layer, or the reaction layer could simultaneously be the release layer at which the separation is carried out.

[0141] Further advantages, features, and details of the invention will become apparent from the following description of preferred embodiments and from the drawings. These show:

[0142] Figure 1 shows a top view of an undistorted substrate in a desired target state,

[0143] Figure 2 shows a top view of a distorted substrate in an undesired state.

[0144] Figure 3 shows a side view of a substrate with a layer system according to an exemplary embodiment of the present invention.

[0145] Figure 4 shows a side view of a substrate with a layer system on a substrate holder. Layer system according to an exemplary embodiment of the present invention.

[0146] Figure 5 shows a side view of a substrate with a layer system on a support substrate layer system according to an exemplary embodiment of the present invention.

[0147] Figure 6 shows a side view of a first embodiment, @

[0148] Figure 7 shows a side view of a second embodiment,

[0149] Figure 8 shows a side view of a third embodiment,

[0150] Figure 9 shows a side view of a fourth embodiment,

[0151] Figure 10 shows a schematic sectional view of a substrate with a photolithographic structure and a reaction layer according to an exemplary embodiment of the present invention and

[0152] Figure 11 shows a schematic sectional view of a substrate with an imprintlithographic structure and a reaction layer according to an exemplary embodiment of the present invention.

[0153] In the figures, identical components or components with the same function are marked with the same reference symbols.

[0154] Figure 1 shows a simplified top view of a non-distorted substrate 1, which has several structures 2. These structures 2 could be, for example, functional units such as microchips, MEMS, LEDs, memory chips, etc. It is also conceivable that the structures 2 are lithographically produced, for example, exposed areas from a photolithographic process or the embossing marks from an imprint lithographic process. In this case, one must imagine a layer of photoresist or an embossing compound on the substrate 1. However, the structures 2 could also simply be applied distortion markings, the shape of which indicates whether the substrate surface is distorted in its pure, untreated state.It is conceivable, for example, that distortions are introduced into the substrate during the cutting, grinding, and / or polishing process, distortions that already exist before the processing of functional units even begins. In principle, all types of measurable, especially topographic, structures 2 are conceivable. Figure 1 serves primarily for illustrative purposes and represents an idealized substrate 1 that is ideal with respect to its intrinsic material properties and / or the processed structures 2. The substrate 1 represents an idealized target state in which all structures 2 are perfectly manufactured and corrected. In general, a target state will only be a state to be strived for; that is, the structures 2 will not be manufactured in an idealized manner. Figure 2 shows a simplified top view of a distorted substrate T.The distortions are clearly recognizable in the structures 2', which are twisted, stretched, compressed, sheared, concealed, or otherwise deformed. Again, the structures 2' can be understood as pre-existing structures embedded in substrate 1 and / or lithographic structures produced by a photolithographic and / or imprint lithographic process, particularly in a photoresist or embossing compound. The depiction of the distorted substrate T is greatly exaggerated. The magnitude of the distortions is usually in the micrometer or even nanometer range. However, distortions in the millimeter range are conceivable. The distortions of the structures 2' can arise in a variety of ways.Possible causes include errors in exposure processes, coating processes, etching processes, multiple bonding and debonding processes necessary for producing individual parts of the structures 2', cleaning processes, plastic deformations, internal expansion, etc. A further influencing factor could be temperature fluctuations in conjunction with inhomogeneous and / or anisotropic thermal expansion of the substrate T and / or the structures 2', which leads in particular to plastic deformations. The distortions could also arise from elastic and / or plastic deformation. Regardless of the cause of the distortions in the structures 2', such substrates T are undesirable and very difficult to process further. Therefore, the aim is to develop a method and a device that can produce a substrate 1 according to Figure 1 from a substrate T from Figure 2.One could also say that the structures 2' of the current state are already distorted and are now to be corrected by targeted newly created distortions in order to transition to the desired state.

[0155] Figure 3 shows a simplified side view of a distorted substrate T, on the underside of which a layer system 3, comprising several layers 5, has been applied. The distorted substrate has structures 2'. In particular, the distortion can be seen in Figure 3 by the fact that the central structure 2' is located too far to the right. The layer system 3 can comprise any number of layers 5. In a layer 5, a chemical and / or physical reaction can be induced by an influencing agent, in particular electromagnetic radiation, most preferably by a laser. This chemical and / or physical reaction causes the part of the substrate 2' located above the area of ​​influence to distort accordingly and preferably to reach the desired target state. Figure 3 is also intended to show that, according to the invention, only a substrate T and a corresponding layer system 3 are necessary.

[0156] Figure 4 shows a simplified side view of a distorted substrate T with a layer system 3, which is preferably placed directly onto a substrate holder 6, and in particular, fixed in place by means of fixing elements 7. The substrate holder is preferably transparent so that a control element (not shown) can act on the layer system 3 through the substrate holder 6. It is conceivable, though less preferred, to fix the substrate T to the substrate holder 6 via the substrate surface 10'. In this case, the transparency of the substrate holder 6 would be necessary to monitor the changes in the structures 2' on the substrate surface 10' while the control element acts on the layer system 3 from the top (not shown). In another conceivable device, the substrate holder 6 would be opaque.In this case, one would need to know the current state of the structures 2' and work exclusively with empirical data and / or models to correctly set the target state. A support substrate 4, as shown in Figure 5, is a useful addition, but as can be seen in Figure 4, not necessary.

[0157] Figure 5 shows a simplified side view of a distorted substrate T on a support substrate 4, with a layer system 3 located between them. This embodiment is particularly advantageous when the substrate T is already very thin. In this case, the support substrate 4 primarily serves for mechanical stabilization. A combination of Figures 4 and 5 is also conceivable; that is, the embodiment according to Figure 5 is used, in which the substrate T is located on a support substrate 4 via the layer system 3, and this support substrate 4 is then fixed to a substrate holder 6 according to Figure 4.

[0158] Figure 6 shows a side view of the influence on a preferred layer system 3 with a reaction layer 5r and a solvent layer 5I. The left image shows how an influencing agent 8, preferably a laser, acts on the reaction layer 5r. The reaction layer 5r is connected to a substrate 1 on which several structures 2 are located, one of which, structure 2', is not in its desired target position. Preferably, the influencing agent 8 can selectively reach and influence only the reaction layer 5r. The right image shows the result of the influence by the influencing agent 8. In this embodiment, the influencing agent 8 has led to a local volume expansion of the reaction layer 5r. This, in turn, leads to a local distortion 9 in the substrate 1 and causes structure 2' (left image) to be displaced to its target position. This could be achieved by...

[0159] The scenario where the volume expansion occurred solely due to heat input and reverses upon cooling of the system. The volume expansion would therefore be reversible. Nevertheless, substrate 1, with all its structures 2, could remain in a desired state for several seconds or even minutes.

[0160] Figure 7 shows a side view of the manipulation of a layer system 3 according to the invention, comprising two reaction layers 5r, 5r' and a solvent layer 5I. The left image shows how a manipulation agent 8, preferably a laser, acts on the reaction layer 5r'. Several structures 2 are again located on the substrate 1, one of which, structure 2', is not in its desired target position. Preferably, the manipulation agent 8 can selectively reach and influence only the reaction layer 5r'. The right image shows the result of the manipulation by the manipulation agent 8. In this embodiment, the manipulation agent 8 has locally caused blistering in the reaction layer 5r'. The material of the reaction layer 5r' is, for example, sublimated.The reaction layer 5r could be a plastically deformable layer whose shape is retained even when the sublimated gas from the layer system 3 diffuses. The gas bubble 10, in turn, leads to a local distortion 9 in the substrate 1 and ensures that the structure 2' (left image) is shifted to its desired position.

[0161] Figure 8 shows a side view of the manipulation of a layer system 3 according to the invention, comprising two reaction layers 5r, 5r' and a solvent layer 5I. The left image shows how a manipulation agent 8, preferably a laser, acts on the reaction layer 5r'. Several structures 2 are again located on the substrate 1, one of which, structure 2', is not in its desired target position. Preferably, the manipulation agent 8 can selectively reach and influence both reaction layers 5r, 5r'. The right image shows the result of the manipulation by the manipulation agent 8. In this embodiment, the manipulation agent 8 has locally caused a reaction between the reaction layers 5r and 5r', resulting in a new material composition 11, in particular an alloy.The material composition 11 may possess a completely new crystal system and / or lattice system and exhibit entirely different and / or new chemical and / or physical properties compared to the materials of the reaction layers 5r, 5r'. The newly formed material composition 11, in turn, leads to a local distortion 9 in the substrate 1 and causes the structure 2' (left image) to shift to its target position.

[0162] Figure 9 shows a side view of the modification of a layer system 3, comprising two reaction layers 5r, 5r' and a dissolution layer 5I, and is to be understood as a further development of the embodiment in Figure 8. In this specific extension of the embodiment from Figure 8, the material 11 itself does not yet generate the distortion 9. However, the physical properties of the material composition 11 are utilized by a second modification agent 8' in such a way that the distortion 9 can be generated, and in particular, even controlled.For example, it would be conceivable that by selectively choosing the reaction layers 5r, 5r' and using the influencing agent 8, a specific material composition 11 with electrorestrictive properties could first be produced, and in a further process step according to Figure 9, an electrorestrictive control of the material 11, which causes the distortion 9, could be achieved using an externally applied electric field, which can now be considered a second influencing agent 8'. Materials 11 with magnetically controllable properties, i.e., magnetorestrictive materials, would also be conceivable.

[0163] Figure 10 shows a simplified side view of a substrate T on a support substrate 4, with a layer system 3 located between them. This embodiment is particularly advantageous when the substrate T is already very thin. In this case, the support substrate 4 primarily serves for mechanical stabilization. In contrast to the analogous Figure 5, here a substrate T is present on which a photolithographic layer 12 has been deposited. The photolithographic layer 12 is, for example, a photoresist. Using a photolithographic system, sub-areas of the photolithographic layer 12 were exposed. The exposed sub-areas are also referred to as (lithographic) structures 2'. It can be seen that the central structure 2' is again displaced. The reason for this could be, for example, an incorrectly calculated, contaminated, and / or incorrectly adjusted mask.The only difference from the structures 2' in Figure 5 is that the (lithographic) structures 2' in Figure 10 are not permanent, but serve to create other structures 2. Nevertheless, the same disclosed method can be applied to the (lithographic) structures 2'. It is also clear to those skilled in the art that the substrate T and the (lithographic) structures 2' in the photolithographic layer 12 may be distorted, so that the effects overlap. Therefore, in this case, the substrate T is also referred to as a distorted substrate.

[0164] Figure 11 shows a simplified side view of a substrate T on a support substrate 4, with a layer system 3 located between them. This embodiment is particularly advantageous when the substrate T is already very thin. In this case, the support substrate 4 primarily serves for mechanical stabilization. In contrast to the analogous Figure 5, here a substrate 1' is present on which an imprint lithographic layer 13 has been deposited and embossed. The imprint lithographic layer 13 is, for example, an embossing compound. Using the die of an imprint lithographic system, sections of the imprint lithographic layer 13 were embossed. The embossed sections are now also referred to as (lithographic) structures 2'. It can be seen that the central structure 2' is again displaced. The reason for this could be, for example, an incorrectly manufactured and / or contaminated die.It is also clear to the expert that the substrate T and the (lithographic) structures 2' in the photolithographic layer 12 may be distorted, so that the effects overlap. Therefore, the substrate T is also referred to as a distorted substrate in this case.

[0165] Reference symbol list:

[0166] 1 , T Substrate in general

[0167] 10 substrate surface

[0168] 1s large-area substrate, especially wafers

[0169] 2, 2' structure

[0170] 3-layer system

[0171] 4 Carrier substrate

[0172] 5r reaction layer

[0173] 5I solvent layer

[0174] 6 substrate holders

[0175] 7 fixing elements

[0176] 8, 8' Influencing agent

[0177] 9 Distortion

[0178] 10 Gas bubble

[0179] 11 Material, in particular alloy

[0180] 12 photolithographic layer 13 imprint lithographic layer

Claims

Claims 1. Method for transferring a structure (2', 2) arranged on and / or embedded in a substrate (1, 1'), wherein the structure is produced by a lithography process or is used in the lithography process, from an actual state to a desired state, in particular before further processing, such as a development process, an etching process, a hardening process, singulation or pick-up by a substrate holder (6), and / or before and / or during a bonding of substrates and / or a further lithography step (1, T), comprising: - Providing a substrate (1 , T) with at least one structure (2', 2) in its current state, - Providing at least one reaction layer (5r), which is in particular integrated into a layer system (3), - Realizing an active connection between the at least one reaction layer (5r) and the substrate (1 , T), wherein the active connection is designed such that a change state in the at least one reaction layer (5r) causes a deformation in the substrate (1 , 1'), - Triggering the change state in the at least one reaction layer (5r) by means of an influencing agent (8), wherein the change state in the at least one reaction layer (5r) is caused in a locally limited manner such that the structure (2', 2) is transformed from the actual state to the desired state.

2. Method according to claim 1, wherein to change in the at least one reaction layer (5r) a volume and / or a lattice structure in the at least one reaction layer (5r) is locally changed and / or a locally confined gas bubble (10) is generated in the at least one reaction layer (5r).

3. Method according to one of the preceding claims, wherein the layer system (3) is formed from the at least one reaction layer (5r) and at least one solvent layer (5I).

4. Method according to one of the preceding claims, wherein the layer system (3) comprises several, in particular different, reaction layers (5r).

5. Method according to one of the preceding claims, wherein the change state is limited in time.

6. Method according to one of the preceding claims, wherein the reaction layer (5r) is formed continuously below the structure (2, 2') or below several structures (2, 2').

7. Method according to one of the preceding claims, wherein the substrate (1 , 1') and the at least one reaction layer (5r) are arranged on a support substrate (4) and / or a substrate holder (6).

8. Method according to one of the preceding claims, wherein light from a laser source and / or an electric and / or magnetic field and / or thermal energy is used as the influencing means (8).

9. Method according to claim 8, wherein the light is guided through an at least partially transparent, preferably fully transparent, substrate holder (6) and / or an at least partially transparent, preferably fully transparent, support substrate (4).

10. Method according to one of the preceding claims, wherein the influencing agent (8) changes the material composition in the at least one reaction layer (5r).

11. Method according to claim 10, wherein the change state in the at least one reaction layer (5r) is induced by means of a further influencing agent in the material composition.

12. Method according to one of the preceding claims, wherein the structure (2, 2') is brought into the desired state before the lithography process. - 33 / 35 - @ 13. Method according to one of the preceding claims, wherein the structure (2) is transformed into the desired state after the lithography process.

14. Arrangement of substrate (1 , 1') with a structure (2, 2') in its current state and at least one reaction layer (5r), in particular integrated into a layer system (3), for carrying out a method according to one of the preceding claims.

15. Device for carrying out the method according to any one of the preceding claims 1 to 13, wherein the device comprises at least one influencing means (8).

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