Interconnection structure having an integrated current sensor

Abstract

The invention relates to a device for a power electronics module, capable of being produced by additive manufacturing, comprising: - a conductive bridge (20) for connecting a first electrode of a semiconductor electronic component (C1), and a conductive zone (11), the conductive bridge (20) including an end portion (21) in contact with the first electrode and another end portion (22) in contact with the conductive zone (11), as well as a suspended flat zone (25) that extends between the end portions (21, 22); - a conductive track (44) forming a winding (40) of a current sensor for detecting a current passing through the conductive bridge (20), the conductive track being arranged around and / or facing the suspended flat zone (25) of the conductive bridge (20), the conductive track being spaced apart and separated from the flat zone via at least one dielectric region (33).

Description

[0001] INTERCONNECTION STRUCTURE WITH INTEGRATED CURRENT SENSOR

[0002] DESCRIPTION

[0003] TECHNICAL FIELD AND PREVIOUS ART

[0004] The present invention relates to the field of power electronic systems and in particular to power electronic modules used to create an electrical energy conversion circuit.

[0005] In power electronics, power modules are basic components of a power conversion circuit. Depending on their configuration, power modules can perform various electrical functions, such as a switching cell, a bidirectional current switch, an inverter, a rectifier bridge, or a converter.

[0006] Among the strategies aimed at reducing the carbon footprint of the aeronautical sector, an effort is currently being made regarding the implementation of electric aircraft or aircraft using hybrid technologies.

[0007] In this context in particular, there is a need to produce high-performance, integrated, reliable and secure power electronic modules.

[0008] A power module is generally formed from one or more electronic components, typically switching elements such as diodes or transistors, a substrate on which the component(s) is or are arranged, typically a metallized ceramic substrate, conductive connection areas and interconnection structures.

[0009] Conductive elements, such as connection bars, may also be included to distribute current through the module and / or bias the component(s). A power module may also be equipped with a cooling system or structure designed to promote heat dissipation.

[0010] It is also known to seek to integrate one or more sensors to monitor the operating parameters of the module, and in particular the current to, through, or delivered by the component. The aim is specifically to monitor the occurrence of overcurrents affecting the component(s) of a power module, in order to prevent its premature aging or even its destruction.

[0011] Furthermore, numerous current detection methods exist, including those using a shunt resistor, those using a Hall effect or magnetoresistive sensor, those made with a "Flux gate" type sensor, and those implemented with a Rogowski type sensor.

[0012] A simple solution for integrating a current sensor into a power module is to use a shunt resistor connected in series with the component. The voltage drop across the resistor is measured and converted into a current value. However, this solution has the drawback of introducing significant parasitic inductances that must be considered in the operation of the power module.

[0013] Existing solutions involve integrating a magnetoresistive or Hall effect sensor into a power module to measure load current. For example, power traces can be extended to provide sufficient space for a current sensor. However, extending these traces also adds parasitic inductances that can disrupt the module's operation.

[0014] It is known to integrate a Rogowski current sensor, this time on a printed circuit board (PCB), to detect the current in a converter arm. The large size of the sensor used makes its integration into a power module difficult.

[0015] As with the devices previously mentioned, the problem arises of integrating this type of sensor into a power module without having to extend the power traces and introduce additional parasitic inductances that are detrimental to operation.

[0016] An arrangement in which a current transformer is placed around each component of a circuit is known but presents space constraints. A Rogowski coil inserted into a power module to measure the current in a transistor's connecting wire is also known. The size of the coil in this coil, again, poses a problem.

[0017] In general, there is a need to quickly measure an electrical current in a power module, while limiting the size and impact on measurement performance.

[0018] DESCRIPTION OF THE INVENTION

[0019] One object of the present invention is to provide a device for a power electronic module, said device comprising:

[0020] - a conductive bridge for connecting a first electrode of a semiconductor electronic component of the module, in particular a switching element, and a conductive area, said conductive area being intended to be connected to a biasing element or to a portion of a circuit comprising at least one other component, said conductive bridge comprising an end portion intended to be brought into contact with said first electrode and another end portion intended to be brought into contact with said conductive area, as well as a suspended flat area extending between said end portions,

[0021] - a conductive track forming a winding of a current sensor to detect a current flowing through the conductive bridge, the conductive track being arranged around and / or opposite the suspended flat area of ​​the conductive bridge, the conductive track being at a distance and separated from said flat area of ​​the conductive bridge by means of at least one dielectric region, the winding being coupled to the conductive bridge so that when a current flows through the conductive bridge, a magnetic field is generated inducing a voltage across the winding.

[0022] Thus, instead of winding the component, the winding is integrated near and opposite a specific interconnection structure that supports it and is connected to the component. This interconnection structure itself has a small footprint and can contribute to heat dissipation. The component typically includes a second electrode that can be arranged on another conductive area resting on the same support as the main conductive area, particularly an electrically insulating support such as a ceramic substrate. These conductive areas are separated.

[0023] Advantageously, the dielectric region forms an encapsulation around the conductive bridge and extends against an upper and lower face of the suspended flat conductive area as well as against lateral sides of the flat area so as to form a closed insulating contour.

[0024] The device is particularly suited to a transistor-type component whose channel is made of a large-bandgap semiconductor material, in particular GaN or SiC.

[0025] Advantageously, the winding is flat. This further reduces the overall size of the sensor. The winding can extend, in particular, in a plane above the suspended flat area. Thus, the suspended flat area is positioned between the winding and these end portions.

[0026] Advantageously, the conductive track forming the coil has a first end terminal and a second end terminal that are flat and arranged in the upper plane. This also contributes to a reduced sensor footprint.

[0027] A device as defined above can, particularly advantageously, be manufactured using additive manufacturing. This facilitates the creation of a small winding with a high number of turns, thus improving sensor sensitivity while minimizing size.

[0028] According to another aspect, the present invention relates to a power module comprising a device as defined above.

[0029] According to one embodiment, the component is a transistor in a transistor switching circuit whose respective gates are driven by a control circuit. The control circuit may be equipped with an integrator connected to the sensor winding to integrate a voltage across this winding. A power module as implemented according to the invention is particularly well-suited to power converters typically ranging from 1 kW to 100 kW, especially when the conductor bridge and the winding are made of Ag.

[0030] According to another aspect, the present invention relates to a switching circuit having a power module and a device as defined above.

[0031] A particular embodiment relates to an electrical energy converter, in particular DC / DC, configured to perform energy adaptation between a DC electrical energy source and a DC load comprising a power electronic module equipped with a device as defined above.

[0032] In another aspect, the present invention relates to a method for manufacturing a device as defined above, in which the conductive bridge, the dielectric region, and the conductive track of the winding are formed on a substrate by additive manufacturing. This manufacturing technique makes it possible to produce a conductive bridge and a sensor structure with various geometries while reducing the overall size. It allows for the creation of a winding with small turns and a high turn density, thus combining measurement sensitivity with a small footprint.

[0033] The additive manufacturing technique used may in particular be an inkjet technique, and in particular using equipment capable of delivering both conductive ink and dielectric ink or from which a dielectric material can be formed.

[0034] Thus, according to a particular embodiment, the formation of the conductive bridge and the winding may include a repetition of step(s) consisting of:

[0035] To form one or more primary elements based on conductive ink,

[0036] Forming one or more second elements based on dielectric ink, exposing said one or more first elements to a first light radiation in a first range of wavelengths, in particular infrared, so as to transform said one or more first elements into one or more blocks of conductive material,

[0037] Exposing said one or more second elements to a second light radiation in a second range of wavelengths, in particular ultraviolet, so as to transform said one or more second elements into one or more portions of dielectric material.

[0038] BRIEF DESCRIPTION OF THE DRAWINGS

[0039] The present invention will be better understood upon reading the description of the given exemplary embodiments, provided for illustrative purposes only and in no way limiting the application, with reference to the accompanying drawings in which:

[0040] Figures 1 and 2 are schematic 3D representations of a device for a power electronic module and comprising a conductive bridge to ensure a connection between an electronic component and another element as well as a winding of a current sensor allowing to measure a current delivered at the input of the component or at the output of this component.

[0041] Figures 3A and 3B give different views of a variant of the device in which the winding is wound around the conducting bridge.

[0042] Figure 4 is a schematic and cross-sectional representation of a power module including such a device.

[0043] Figure 5 gives an example of a power circuit equipped with several devices according to the invention, each enabling a connection with a switching transistor and measuring a current to or from that transistor.

[0044] Figures 6A, 6B, 6C, 6D, 6E, 6F, 6G, 6H, 6J, and 6K illustrate an example of a process for manufacturing a power module device using additive manufacturing. Identical, similar, or equivalent parts of the various figures described below are identified by the same numerical references to facilitate comparison between figures.

[0045] In addition, in the description below, terms that depend on the orientation of the structure such as "above", "below", "back", "front", "upper", "lower", apply assuming that the structure is oriented as illustrated in the figures.

[0046] The different parts represented in the figures are not necessarily shown on a uniform scale, in order to make the figures more legible.

[0047] DETAILED DESCRIPTION OF SPECIFIC METHODS OF IMPLEMENTATION

[0048] Figures 1 and 2 give 3-dimensional views and different viewing angles of a power module device implemented according to an embodiment of the present invention.

[0049] The device includes an interconnection structure allowing a first electrode or terminal (not visible in Figures 1 and 2) of an electronic component Ci of a power electronic circuit, for example of a converter, to be connected to a conductive area 11, which can itself be connected to another element of the circuit, for example to a portion of the circuit delivering a biasing potential or setting to a reference potential.

[0050] The electronic component Ci is typically a semiconductor switching element such as, for example, a transistor. Advantageously, the electronic component Ci is made of a wide-bandgap semiconductor. Thus, in the case of a transistor, this transistor can be, for example, a SiC MOSFET or a gallium nitride (GaN) transistor.

[0051] The interconnection structure includes a conductive bridge 20, typically made of a metallic material such as copper or silver. The conductive bridge 20 is formed by an end portion 22 disposed on and in contact with the conductive area 11 and another end portion 21 disposed on and in contact with the first electrode or terminal of the component Ci. This first electrode or terminal of the component Ci can be a drain or a source in the case where the electronic component Ci is a field-effect transistor, or an emitter or collector in the case where the electronic component Ci is a bipolar transistor.

[0052] A second electrode or terminal of component Ci is arranged here on a second conductive area 12, separate from the conductive area 11, and which may be located in the same horizontal plane as the conductive area 11. This second electrode or terminal of component Ci, distinct from the first, may be a source or a drain in the case where the electronic component Ci is a field-effect transistor, or a collector or an emitter in the case where the electronic component Ci is a bipolar transistor. Component Ci may be arranged so as to rest on the second conductive area 12.

[0053] The interconnection structure further includes a conductive zone 25, which is suspended, which extends at a distance from the first conductive zone 11 and the second conductive zone 12 and which connects the end portions 21 and 22.

[0054] The suspended conductive zone 25 is in particular a flat-looking zone which typically extends parallel to the conductive zones 11, 12 and to a principal plane of a support (not shown but typically parallel to the plane [O; x; y] in figures 1 and 2) of these conductive zones 11, 12.

[0055] The suspended conductive zone 25 has a thickness e25 (dimension measured parallel to the z-axis of an orthogonal frame [O; x; y; z] given in figures 1 and 2) less than its width Wis (dimension measured parallel to the support and the x-axis of the orthogonal frame [O; x; y; z]).

[0056] According to a particular embodiment example, the thickness e25 of the suspended conductive zone 25 is planned to be between 100 pm and 2 mm and the width W2s of this zone between 1 mm and 10 mm.

[0057] Such a conductive bridge 20 has the advantage of being more rigid and robust than a conventional connection structure using conductive wiring.

[0058] Such a conductive bridge 20 can, by its shape, contribute to the extraction of heat from the upper side of the component Ci and thus reduce the thermal resistance of the assembly. Due to its flat shape, the upper surface 25a of the conductive bridge 20 can also serve as a mounting area for another element on the conductive bridge 20, and in this particular example, for the structure of a current sensor.

[0059] The suspended conductive area 25 is here coated with a dielectric region 33 (not shown in Figure 2 for the sake of simplification) and a conductive track of the current sensor, here in particular a Rogowski type sensor.

[0060] The conductive track of the current sensor forms a coil 40 arranged above and at a distance from the flat area 25. The thickness eso of the dielectric region 33 between the conductive bridge 20 and the coil 40 and the dielectric material(s) of the dielectric region 33 are chosen so as to allow coupling between the conductive bridge 20 and the coil 40. The dielectric region 33 can, for example, be epoxy-based with a thickness eso between the conductive bridge 20 and the coil 40 planned between 50 µm and 1 mm, advantageously between 50 µm and 200 µm.

[0061] This coupling is such that when a current flows through the conductive bridge 20, it generates a magnetic field. This magnetic field induces an electromotive force in the winding 40, and an induced voltage is proportional to the derivative of the current with respect to time. This induced voltage is established between two terminals 46 and 48 at the ends of the winding 40, which are advantageously generally flat or planar in shape. Such a voltage can then be integrated by an electronic circuit (not shown) connected to terminals 46 and 48.

[0062] In the particular embodiment illustrated in Figures 1 and 2, the conductive track 44 forming the winding 40 and the end terminals 46, 48 extend mainly in a horizontal plane (i.e., a plane parallel to the plane [O; x; y]) parallel to that in which the flat area 25 extends. In this case, the overall size of the current sensor structure is minimized.

[0063] In the specific embodiment illustrated in Figures 1 and 2, the dielectric region 33 extending between the current sensor winding 40 and the interconnecting conductor bridge 20 advantageously also extends against the sides of the conductor bridge 20 and under the suspended conductive area 25, in order to achieve insulating encapsulation. In the specific embodiment illustrated in Figures 1 and 2, the current sensor winding 40 extends above the interconnecting conductor bridge 20, but alternatively, the current sensor winding 40 can be arranged under the conductor bridge 20 and opposite the suspended conductive area 25.

[0064] In the particular embodiment illustrated in figures 1 and 2, the suspended and flat conductive area 25 of the conductive bridge 20 has a parallelepiped shape, but other shapes can be considered to realize such a conductive platform.

[0065] Another example of an embodiment of a device as described above is shown in Figures 3A-3B, which respectively provide a schematic perspective view of the interconnection structure and the current sensor, as well as a cross-sectional view of these elements. This time, a coil 40 is formed from a conductive track wound around the suspended conductive area 25 of the conductive bridge. The contact terminals 46 and 48, which allow the voltage representing the derivative of the detected current to be obtained, are arranged on either side of the conductive winding forming the coil 40.

[0066] A device such as the one described above is typically integrated into a power module. Thus, Figure 4 shows a power module with a device such as the one described above in relation to Figures 1 and 2. The conductive bridge 20 allows an electrode of a component Ci to be interconnected with another element connected to the conductive area 11, while a current sensor structure with a winding 40 is arranged opposite the conductive bridge 20 and allows the measurement of current delivered by or entering component Ci, and possibly the detection of overcurrents.

[0067] The conductive areas 11 and 12 are here connection areas, for example made of copper, resting on an upper surface of a substrate 51, which may be made of an electrically insulating material with good thermal conductivity, for example a ceramic or pre-impregnated material, or a material such as is commonly used in a PCB substrate. A lower surface of the substrate 51, opposite said upper surface, is coated with a conductive area 53, for example made of copper, itself arranged on a base plate, for example made of metal, which serves as structural and thermal support for the module.

[0068] The conductive bridge 20 allows for a more rigid interconnection than a conventional wiring harness and also enables heat dissipation from the upper side of the electronic component Ci. The current sensor winding 40 is positioned as close as possible to the conductive bridge 20 to achieve a compact design without interfering with the operation of the power circuit in which the component Ci is integrated.

[0069] Either of the examples of devices described above can be formed by means of an additive manufacturing technique, in other words 3D printing in which the conductive bridge 25, the dielectric region 33 and the winding 40 of the current sensor are formed by additive manufacturing, in other words by 3D printing.

[0070] A dual-material printing technique, particularly inkjet printing, using a combination or succession of conductive and dielectric ink jets, can be advantageously employed. This minimizes the number of steps required to create the interconnect and sensor structures.

[0071] The use of such a technique also provides significant flexibility regarding the geometry that can be given to the assembly and in particular to the winding 40. It also allows for the provision of a conductive track of winding 40 of width W40 (dimension measured parallel to the x axis of the orthogonal frame [O ; x ; y ; z]), in particular of small width, for example between 1 mm and 10 mm and thus to have a winding 40 with a high turn density, which promotes better sensitivity of the current sensor.

[0072] A device or module such as described above can be integrated into an IPM power module, (i.e. "Intelligent Power Module"), which combines in particular a power converter made up of switching transistors and an integrated control circuit allowing in particular to control the respective gates of the switching transistors.

[0073] A specific example of a particular power conversion circuit, in which the arms each incorporate a device 7n, 7i2, 721, 722, 7ki, 7k2 as described previously in connection with Figures 1, 2, or 3A-3B, is shown in Figure 5. Each device 7ii, lu, lu, lu, 7ki, l\a has a connecting bridge here connected to a transistor Tu, T12, T21, T22, Tki, Tk2, and a current sensor structure. Some devices 7n, lu, u, ivi make a connection between a high VDC supply line and a transistor Tu, or T21, or Tki, while other devices 712, lu, l\a make a connection between a low supply line or ground (GND) and a transistor.

[0074] A control integrated circuit 152 is configured to drive the transistors Tu, Ti2, T2i, T22, Tki, Tk2 and in particular their gate electrode in order to allow their changes of state, such as the transition from the open state to the closed state or from the closed state to the open state, as well as to allow them to remain in an open or closed state, and to control their opening, i.e. their transition to a blocked state, in case of detection of an overcurrent.

[0075] Thus, the control integrated circuit 152 is configured to analyze the signal delivered by each current sensor and to detect the occurrence of an overcurrent affecting the transistor Tn,Ti2,T2i,T22 Tki,Tk2 from such an analysis.

[0076] The output signal can be, in particular, a voltage measured at terminals 46 and 48 of the current sensor's winding 40. This voltage represents the derivative of the current flowing through the bridge 40 and is transmitted to the control integrated circuit 152. This control circuit 152 can be equipped with an integrator and configured to integrate the voltage output by each of the sensors.

[0077] An example of an additive manufacturing process by 3D printing, of a device such as described above, and in which a conductive bridge structure and a current sensor winding are formed separated by a dielectric region, will now be given in connection with Figures 6A-6K.

[0078] On a starting substrate 601, here temporary, for example a polyimide such as Kapton® or a preferably non-adhesive polymer, a material is deposited. This material has a metallic component or contains a metallic species and is capable of being transformed into a conductive material by exposure to light, or more generally, a material whose electrical conductivity can be increased following exposure to light. This transformation can be carried out, in particular, by sintering. The deposited material is typically in the form of a liquid, such as a conductive ink 603 containing metallic particles or charges, for example, silver-based (Figure 6A). In this example, the ink 603 is not deposited over the entire substrate 601; in other words, it is not deposited "full plate," but rather in a localized manner on certain areas of the substrate 601.Conductive elements 605a and 605b are thus produced, intended to form end sections of a conductive bridge. Elements with a minimum width on the order of ten or twenty micrometers, for example 18 µm, and a minimum thickness on the order of, for example 1 µm, can be provided.

[0079] A material having a dielectric component or containing a dielectric precursor, and capable of being transformed into a dielectric material by exposure to light, is also deposited on the support 601 (Figure 6B). This transformation can, in particular, be polymerization. The deposited material can be in the form of a liquid, such as a so-called "dielectric" ink 607, and, for example, based on a dielectric polymer, such as an epoxy polymer. Elements 609a, 609b, and 609c are thus defined, intended to form at least one dielectric region. Elements with a minimum width on the order of ten to twenty micrometers, for example 18 µm, and a minimum thickness on the order of, for example 1 µm, can be provided.

[0080] The deposition of inks 603 and 607 can be carried out using ink distribution devices belonging to the same equipment. Advantageously, a 3D printer, equipped with one or more light sources, is used as the equipment for deposition and transformation of the inks.

[0081] Figure 6C shows the exposure of conductive ink 603 to infrared (RI) radiation within a first range of wavelengths. Typically, the light source, for example a lamp, emits in the infrared range. The power, exposure time, and focal length are adjusted according to the dimensions of the elements 605a, 605b that are to be transformed into a conductive material, for example, silver. For example, the exposure time can be on the order of one or more seconds. The transformation may involve sintering, whereby the metallic particles, for example silver, are heated to agglomerate them.

[0082] Figure 6D shows the exposure of dielectric ink 607 to light radiation R2 belonging to a second wavelength range, distinct from the first range. Typically, the radiation source R2, for example a lamp, emits in the ultraviolet range. The power, exposure time, and focal length are adjusted according to the dimensions of the elements 609a, 609b, and 609c that are to be transformed into a dielectric material, for example, an epoxy polymer. For example, the exposure time can be on the order of one or more seconds. The transformation of dielectric ink 607 may include polymerization.

[0083] A first Ni level of conductive 605a, 605b elements and dielectric 609a, 609b, 609c elements is thus formed.

[0084] Such steps are then typically repeated to form additional levels of conductive element(s) and dielectric element(s).

[0085] Thus (figure 6E), the conductive ink 603 is deposited again to form at least one conductive element 615 intended to form the suspended flat area of ​​the conductive bridge 620.

[0086] In Figure 6F, the dielectric ink 607 is again deposited to form dielectric elements 619a, 619b around the conductive element 615 and thus achieve encapsulation around the suspended flat area of ​​the conductive bridge 620. Exposures to infrared RI radiation (Figure 6G) and to ultraviolet R2 radiation (Figure 6H) are also repeated.

[0087] In subsequent steps, the dielectric ink 607 is deposited again and this ink 607 is exposed to UV light R2 radiation to form, at a higher level, a dielectric element 629 (Figure 61) intended to form a separation region between the conductive bridge 620 and a winding of a current sensor structure.

[0088] Next (figure 6J), in a higher Nk level, the conductive ink 603 and the dielectric ink 607 are deposited and exposed respectively to RI radiation, typically IR, and to R2 radiation, typically UV, in order to produce on the one hand at least one conductive element intended to form the winding 640 of the current sensor and its connection terminals and on the other hand dielectric encapsulation elements 639a, 639b around this winding 640.

[0089] The temporary support 601 can then be removed or detached (Figure 6K), for example by peeling it off. This preserves a structure formed by the conductive bridge 620 and the current sensor winding 640 separated by a dielectric region 633.

[0090] The 650 structure thus formed can then be assembled, for example by brazing onto conductive areas of a substrate or onto a conductive area of ​​a substrate and a terminal or electrode of a component resting on that substrate.

[0091] As an alternative to the embodiment just described, the order of one or more steps can be reversed. Thus, for each layer formed, the dielectric ink 607 can be deposited before the conductive ink 603, and exposure to UV radiation can be carried out before exposure to IR radiation.

[0092] As an alternative to the examples of implementation that have just been given, a simultaneous deposition of the conductive and dielectric inks 603, 607 can be envisaged.

[0093] In either of the embodiment examples described above, the formation of the conductive elements and dielectric regions can be carried out using a 3D printer whose material dispensing device(s), in particular ink, is or are controlled by means of a digital file typically generated using a computer-aided design tool for electronic circuits.

[0094] A digital 3D model of the structure is created beforehand using CAD (Computer-Aided Design) software. The digital model is prepared for printing, sliced ​​into successive layers, each corresponding to a level NI,..., Nk, and translated into specific instructions for the printer. As an alternative to the manufacturing process described above, instead of fabricating the conductive bridge and current sensor structure on a temporary support, the process described above can be carried out directly on the substrate containing the conductive areas 11, 12 and the electronic component Ci described above.

Claims

DEMANDS 1. Device for a power electronic module, said device comprising: - a semiconductor electronic component (Ic), - a conductive zone (11), - a conductive bridge (20) for connecting a first electrode of the semiconductor electronic component (Ci) and said conductive area (11), said conductive area (11) being intended to be connected to a biasing element (VDC; GND) of said component or to a portion of a circuit comprising at least one other component, said conductive bridge (20) comprising an end portion (21) intended to be disposed in contact with said first electrode and another end portion (22) intended to be disposed in contact with said conductive area (11), as well as a suspended flat area (25) extending between said end portions (21, 22), - a conductive track (44) forming a winding (40) of a current sensor for detecting a current flowing through the conductive bridge (20), the conductive track being arranged around and / or opposite the suspended flat area (25) of the conductive bridge (20), the conductive track being at a distance from and separated from said flat area of ​​the conductive bridge by means of at least one dielectric region (33), the winding (40) being coupled to the conductive bridge such that when a current flows through the conductive bridge, a magnetic field is generated inducing a voltage across the winding, the device further comprising: - an electrically insulating support (51) such as a ceramic substrate, - another conductive zone (12) intended to be connected to a second electrode of said component (Cl), said conductive zones (11) and said other conductive zone (12) being disjoint and resting on the support (51), the dielectric region (33) forming an encapsulation around the conductive bridge (25), the dielectric region (33) extending against an upper face (25a) and an underside of the suspended flat area (25) and against the lateral sides of the flat area so as to form a closed insulating contour.

2. Device according to claim 1, wherein the winding (40) extends in a plane above the suspended flat area (25), such that the suspended flat area (25) is disposed between the winding (40) and said end portions (21, 22) and wherein the conductive track (44) forming the winding comprises a first end terminal (46) and a second end terminal (48), said end terminals (46, 48) being generally planar in shape and arranged in said plane.

3. Power module comprising a device according to any one of the preceding claims, and said component (Cl), wherein the component is a transistor of a transistor switching circuit whose respective gates are driven by a control circuit, said control circuit comprising an integrator connected to said winding (40) to integrate a voltage across said winding.

4. Power module comprising a device according to claim 1 or 2, wherein said component (Ci) is a transistor whose channel is formed of a wide bandgap semiconductor material, in particular GaN or SiC.

5. Electrical energy converter, in particular DC / DC configured to perform energy adaptation between a DC electrical energy source and a DC load, comprising a module according to one of claims 3 or 4.

6. Method of making a device according to one of claims 1 or 2, wherein the conductive bridge (25), the dielectric region (33) and the conductive track (44) of the winding (40) are formed on a support by additive manufacturing, in particular by inkjet printing.

7. A method according to claim 6, wherein the formation of the conductive bridge (25) of the dielectric region (33) and the winding (40) comprises a repetition of deposition step(s) on said support and consisting of: - Form one or more first elements (605a, 605b; 615; 635) based on a conductive ink (603), - Form one or more second elements (609a, 609b, 609c; 619a, 619b; 629) based on dielectric ink (607), - Exposing said one or more first elements (605a, 605b; 615; 635) to a first light radiation in a first range of wavelengths, in particular infrared, so as to transform said one or more first elements into one or more blocks of conductive material of the winding or the conductive bridge, - Expose said one or more second elements (609a, 609b, 609c; 619a, 619b; 629) to a second light radiation in a second range of wavelengths, in particular ultraviolet, so as to transform said one or more second elements into one or more portions of dielectric material.

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