Optoelectronic component and method for producing an optoelectronic component

Abstract

An optoelectronic component is disclosed. The optoelectronic component comprises a pixelated radiation-emitting semiconductor chip comprising a plurality of emission regions that are separately drivable. The optoelectronic component further comprises a grid-shaped radiation-transmitting wall structure arranged on the radiation-emitting semiconductor chip. The wall structure surrounds openings via which the radiation-emitting semiconductor chip is exposed. The openings are each associated with one of the emission regions of the radiation-emitting semiconductor chip. The optoelectronic component further comprises a plurality of radiation-transmitting cover elements arranged on the radiation-emitting semiconductor chip. The cover elements are each located in one of the openings surrounded by the wall structure and laterally adjoin the wall structure. The wall structure comprises a lower refractive index than the cover elements. Further disclosed is a method for producing an optoelectronic component.

Description

[0001] 2024PF00587 1

[0002] OPTOELECTRONIC COMPONENT AND METHOD FOR PRODUCING AN

[0003] OPTOELECTRONIC COMPONENT

[0004] DESCRIPTION

[0005] The present invention relates to an optoelectronic component . The optoelectronic component comprises a pixelated radiationemitting semiconductor chip . The invention further relates to a method for producing an optoelectronic component .

[0006] This patent application claims priority to German patent application 10 2024 132 364 . 7 , the disclosure of which is hereby incorporated by reference .

[0007] An optoelectronic component for use in an automotive application may comprise a pixelated radiation-emitting semiconductor chip . The radiation-emitting semiconductor chip may comprise a plurality of emission regions located next to each other that may be driven separately . The optoelectronic component may further comprise a continuous conversion layer for radiation conversion covering the radiation-emitting semiconductor chip . By the conversion layer, a primary light radiation generated by the emission regions of the radiationemitting semiconductor chip may be partially converted so that a white mixed light radiation may be emitted from the optoelectronic component . A pixel of the optoelectronic component may be constituted by an emission region of the radiation-emitting semiconductor chip and a portion of the conversion layer irradiated with primary light radiation generated by that emission region .

[0008] In the optoelectronic component with the configuration described above , a crosstalk may occur between the pixels , i . e . that light radiation may also be emitted from the conversion layer in areas in which emission regions of the radiationemitting semiconductor chip are not operated . This may be due i . a . to scattering and guiding of light radiation in the con- 2024PF00587 2 version layer . As a result , the contrast ratio may be reduced .

[0009] The obj ect of the present invention is to speci fy a solution for an improved optoelectronic component .

[0010] This obj ect is achieved by the features of the independent patent claims . Further advantageous embodiments of the invention are speci fied in the dependent claims .

[0011] According to one aspect of the invention, an optoelectronic component is proposed . The optoelectronic component comprises a pixelated radiation-emitting semiconductor chip . The radiation-emitting semiconductor chip comprises a plurality of emission regions that are separately drivable . A further constituent part of the optoelectronic component is a gridshaped radiation-transmitting wall structure arranged on the radiation-emitting semiconductor chip . The wall structure surrounds openings via which the radiation-emitting semiconductor chip is exposed . The openings are each associated with one of the emission regions of the radiation-emitting semiconductor chip . The optoelectronic component further comprises a plurality of radiation-transmitting cover elements arranged on the radiation-emitting semiconductor chip . The cover elements are each located in one of the openings surrounded by the wall structure and laterally adj oin the wall structure . The wall structure comprises a lower refractive index than the cover elements .

[0012] The proposed optoelectronic component comprises a pixelated radiation-emitting semiconductor chip on which, instead of a continuous layer or continuous conversion layer, a gridshaped radiation-transmitting wall structure and separate radiation-transmitting cover elements are arranged . The radiation-emitting semiconductor chip comprises a plurality of emission regions that may be separately electrically driven . The wall structure comprises openings , each opening being associated with one emission region, through which the radia- 2024PF00587 3 tion-emitting semiconductor chip and thus the emission regions are exposed . In each of the openings of the wall structure a cover element is arranged .

[0013] In this way, the wall structure or respective walls of the same may be located between neighboring cover elements and may separate the cover elements from each other spatially . The cover elements may further be located on or cover a respective one of the emission regions of the radiationemitting semiconductor chip . With this construction, an emission region of the radiation-emitting semiconductor chip and a cover element arranged on that emission region may constitute a pixel of the optoelectronic component .

[0014] In radiation operation of the proposed optoelectronic component , emission regions of the radiation-emitting semiconductor chip may be driven to generate light radiation with which associated cover elements may be irradiated or irradiated through, so that light emission from the cover elements and pixels may occur . Here , the configuration of the optoelectronic component makes it possible to suppress or minimi ze light emission in areas or from pixels in which emission regions of the radiation-emitting semiconductor chip are not operated and turned of f . This is due to the separate cover elements and the wall structure located between them, wherein the wall structure comprises a smaller refractive index than the cover elements . In this way, a portion or large portion of light radiation emitted or propagating laterally in the direction of the wall structure in the areas of the cover elements and pixels may be subj ect to total internal reflection at the wall structure . Accordingly, emission of light radiation may be restricted or substantially restricted to the areas of the respectively operated pixels , whereas guiding of light radiation in between the pixels , and thus emission of light radiation from non-operated pixels , does not or substantially does not occur . The optoelectronic component may therefore feature a suppressed or minimi zed optical crosstalk between the pixels , and a high contrast . In addition, high 2024PF00587 4 luminance of the operated pixels may be provided without loss of brightness as no absorbing material is used to block the crosstalk .

[0015] In the following, further possible details and embodiments are described which may be considered for the optoelectronic component .

[0016] The grid-shaped wall structure arranged on the radiationemitting semiconductor chip may be constituted by a plurality of connected or merging walls . The wall structure may further comprise a closed circumferential frame shape at the edge , constituted by a plurality or four adj oining walls at the edge . The openings surrounded by the wall structure may be present as through openings in the wall structure .

[0017] The emission regions of the radiation-emitting semiconductor chip via which the radiation-emitting semiconductor chip may generate and emit light radiation or primary light radiation may be located next to each other, and may be arranged in the form of a matrix of rows and columns . The same applies to the cover elements and pixels of the optoelectronic component . The radiation-emitting semiconductor chip may be a pixelated LED chip ( light-emitting diode ) . Moreover, the radiationemitting semiconductor chip may be a monolithic pixelated radiation-emitting semiconductor chip .

[0018] The radiation-emitting semiconductor chip may comprise a grid-shaped trench structure between the emission regions so that the emission regions may be present in the form of protruding semiconductor regions of the radiation-emitting semiconductor chip . The trench structure may be constituted by a plurality of connected or merging trenches . The grid shape of the wall structure may correspond to the grid shape of the trench structure . Moreover, the grid-shaped wall structure may be located in the area of the trench structure and fill the trench structure of the radiation-emitting semiconductor chip . 2024PF00587 5

[0019] The emission regions of the radiation-emitting semiconductor chip may comprise lateral dimensions in the micrometer or two-digit micrometer range . The same applies to the openings surrounded by the grid-shaped wall structure , and therefore to the cover elements and pixels . As for the wall structure or walls of the same , a width and a height may also be in the micrometer or two-digit micrometer range . In this respect , the wall structure may also be referred to as micro-wall structure or micro-dam .

[0020] The cover elements located in the openings of the grid-shaped wall structure may adj oin and cover the radiation-emitting semiconductor chip, and may laterally adj oin interior sides or interior side faces of the wall structure . The openings may be partially filled or provided with the cover elements , so that the wall structure protrudes from the cover elements .

[0021] Enabling total internal reflection for a large portion of light radiation and thus a high contrast between the pixels of the optoelectronic component may be favored by a large di f ference in refractive index between the cover elements and the wall structure , and accordingly by a low refractive index of the wall structure or a material from which the wall structure is formed . This is because a small critical angle for total internal reflection may be achieved by a large di fference in refractive index, and the greater the di f ference in refractive index, the smaller is the critical angle . Since total internal reflection occurs for light radiation when the angle of incidence exceeds the critical angle , the smaller the critical angle , the greater is the portion of light radiation that is subj ect to total internal reflection .

[0022] It is therefore intended that the di f ference in refractive index between the cover elements and wall structure is large , or is as large as possible . The di f ference in refractive index may be greater than 0 . 3 . This may include a di f ference in refractive index of more than 0 . 4 , or in the range of or more 2024PF00587 6 than 0.5. In a corresponding manner, it is intended that the grid-shaped wall structure comprises a low refractive index or a refractive index that is as low as possible, such as a refractive index of below 1.1.

[0023] In this regard, according to a further embodiment, the wall structure comprises a refractive index of no more than 1.08. This makes it possible to provide a relatively small critical angle, which may be in the range of or below 40°.

[0024] In a further embodiment, the wall structure is formed from an aerogel material. Such a material may have a relatively small refractive index close to the refractive index of air or close to 1.0, making it possible to reliably realize the suppression of crosstalk across pixels of the optoelectronic component on the basis of total internal reflection. The low refractive index of an aerogel material results from the high porosity of this material, which comprises a lattice or pore structure with a small proportion of solid. The aerogel material may therefore substantially consist of air.

[0025] The aerogel material applied for the wall structure may be based on an oxide material. In this regard, in a further embodiment, the wall structure is formed from a silica aerogel material, i.e. form a silicon oxide (SiO2) based aerogel material. For such a material, appropriate manufacturing processes are available to form the wall structure, which applies to the above-mentioned dimensions in the micrometer range. In this way, reliable production of the optoelectronic component is made possible. Moreover, a silica aerogel material and thus the wall structure may be produced with and thus comprise a low or ultra-low refractive index in the range of 1.008 to 1.08. The silica aerogel may further comprise a high temperature stability. In this regard, the silica aerogel may withstand temperatures up to at least 600°C, and may therefore reliably secure the contrast performance over the product lifetime of the optoelectronic component. 2024PF00587 7

[0026] In a further embodiment , at least a part of the cover elements is configured as conversion element for radiation conversion . In operation of the radiation-emitting semiconductor chip, the radiation-emitting semiconductor chip may generate primary light radiation which may be at least partially converted into secondary light radiation via a cover element configured as conversion element . In this way, combined or mixed light radiation comprising the primary and secondary light radiation may be emitted .

[0027] It is possible that all cover elements are configured as conversion element for radiation conversion . In relation to this , in a further embodiment , the cover elements are formed from the same conversion material for radiation conversion . In this way, the optoelectronic component may be used in an automotive application, namely in a headlamp of an adaptive front-lighting system (AFS ) of a vehicle . In this respect , the radiation-emitting semiconductor chip or its emission regions may be configured to generate a blue light radiation which may be partially converted into a yellow light radiation by the cover elements configured and acting as conversion elements , so that in total a white light radiation may be emitted from the pixels of the optoelectronic component . In lighting operation, di f ferent light distributions may be generated in an illumination area in combination with imaging optics by respectively driving emission regions of the radiation-emitting semiconductor chip and thus operating pixels of the optoelectronic component . With the configuration of the optoelectronic component , the illumination may take place with a high contrast . Deviating from an automotive application, the optoelectronic component may be used in another field such as consumer products , for example in a proj ector .

[0028] A conversion material for radiation conversion, which may be utili zed in the optoelectronic component described here , may comprise a radiation-transmitting basic or matrix material and phosphor particles contained in the matrix material . The matrix material may be a silicone material . The conversion 2024PF00587 8 material may comprise a refractive index of more than 1 . 5 . The refractive index may be 1 . 6 or in the range of 1 . 6 . A higher refractive index is also possible .

[0029] Deviating from a configuration in which the cover elements are formed from the same conversion material , a configuration may also be considered in which the cover elements are formed from di f ferent materials . This may have the ef fect that the cover elements comprise refractive indices being di f ferent from one another, wherein these refractive indices are higher than that of the wall structure . The di f ferent materials may include di f ferent conversion materials , a conversion material and a purely radiation-transmitting material such as a silicone material , or a plurality of di f ferent conversion materials and a purely radiation-transmitting material . In this way, the optoelectronic component may comprise pixels for generating light radiations with di f ferent colors , and may thus be used for a display application such as RGB display application .

[0030] With regard to the latter, the following embodiment may be considered . Here , a first part of the cover elements is formed from a first conversion material for radiation conversion, a second part of the cover elements is formed from a second conversion material for radiation conversion that di ffers from the first conversion material , and a third part of the cover elements is formed from a purely radiationtransmitting material or a third conversion material for radiation conversion that di f fers from the first and second conversion material .

[0031] In this context , the radiation-emitting semiconductor chip may be configured to generate a blue light radiation, and the third part of the cover elements may be formed from the purely radiation-transmitting material . In operation, the blue light radiation may be converted into a red light radiation by the first part of the cover elements , may be converted into a green light radiation by the second part of the cover 2024PF00587 9 elements , and may be transmitted through the third part of the cover elements without radiation conversion . Alternatively, the radiation-emitting semiconductor chip may be configured to generate an ultraviolet light radiation, and the third part of the cover elements may be formed from the third conversion material . In operation, the ultraviolet light radiation may be converted into a red light radiation by the first part of the cover elements , may be converted into a green light radiation by the second part of the cover elements , and may be converted into a blue light radiation by the third part of the cover elements .

[0032] In a further embodiment , the optoelectronic component further comprises an electronic semiconductor chip for driving the radiation-emitting semiconductor chip . Here , the radiationemitting semiconductor chip is arranged on the electronic semiconductor chip . The radiation-emitting semiconductor chip together with the electronic semiconductor chip may constitute a so-called system-on-chip ( SOC ) . The electronic semiconductor chip, which may also be referred to as driver IC ( integrated circuit ) or driver chip, may be reali zed in CMOS technology ( complementary metal-oxide-semiconductor ) , and may be configured as AS IC-chip ( application-speci fic integrated circuit ) . The radiation-emitting semiconductor chip may be arranged on a front side of the optoelectronic semiconductor chip with a back side of the same , and may be electrically and mechanically connected to the electronic semiconductor chip . In relation to this , back-side contacts of the radiation-emitting semiconductor chip may be connected to frontside contacts of the electronic semiconductor chip via an electrically conductive connection material such as solder .

[0033] The optoelectronic component may comprise further constituent parts . In a further embodiment , the electronic semiconductor chip is arranged on a carrier, and a housing body surrounding the electronic semiconductor chip and the radiation-emitting semiconductor chip is also arranged on the carrier . Moreover, a further wall structure surrounding the radiation-emitting 2024PF00587 10 semiconductor chip is arranged on the electronic semiconductor chip . Furthermore , a reflective encapsulation material is arranged on the carrier and on the electronic semiconductor chip in an area between the further wall structure and the housing body .

[0034] The reflective encapsulation material may comprise a radiation-transmitting basic or matrix material such as a silicone material and reflective particles contained therein . The reflective encapsulation material may encapsulate bond wires via which the electronic semiconductor chip may be electrically connected to an electrical contact structure of the carrier . The further wall structure may surround an interior area in which the radiation-emitting semiconductor chip is located on the electronic semiconductor chip . In production of the optoelectronic component , in which the encapsulation material may be applied in flowable form, the further wall structure may prevent the encapsulation material from entering the interior area surrounded by the further wall structure . The further wall structure may also be referred to as dam .

[0035] With respect to the aforementioned embodiment , the gridshaped wall structure located on the radiation-emitting semiconductor chip may not only restrict light emission to the respectively operated pixels , but may also suppress or minimi ze emission of light radiation from edge pixels in direction of the further wall structure and thus the occurrence of light reflection at the further wall structure . Accordingly, a glaring ef fect emanating from such light reflection may be suppressed or minimi zed by the grid-shaped wall structure .

[0036] According to a further aspect of the invention, a method for producing an optoelectronic component is proposed . The method comprises providing a pixelated radiation-emitting semiconductor chip . The radiation-emitting semiconductor chip comprises a plurality of emission regions that are separately drivable . The method further comprises forming a grid-shaped 2024PF00587 11 radiation-transmitting wall structure arranged on the radiation-emitting semiconductor chip . The wall structure surrounds openings via which the radiation-emitting semiconductor chip is exposed . The openings are each associated with one of the emission regions of the radiation-emitting semiconductor chip . The method further comprises forming a plurality of radiation-transmitting cover elements arranged on the radiation-emitting semiconductor chip . The cover elements are each located in one of the openings surrounded by the wall structure and laterally adj oin the wall structure . The wall structure comprises a lower refractive index than the cover elements .

[0037] The method of fers the possibility of reliably producing the above-described optoelectronic component or one or a plurality of the above-described embodiments of the optoelectronic component . Aforementioned features and details may therefore be applied in a corresponding manner in relation to the method . As an example , the optoelectronic component produced by the method may feature a suppressed or minimi zed optical crosstalk between the pixels , and a high pixel contrast during operation . Features and details described in the following with regard to the production method may correspondingly be applied to the optoelectronic component .

[0038] The aforementioned steps of the method may be carried out in the order given above , i . e . the radiation-emitting semiconductor chip may be provided, subsequently the grid-shaped wall structure arranged on the radiation-emitting semiconductor chip may be formed, and subsequently the cover elements arranged on the radiation-emitting semiconductor chip in the openings of the wall structure may be formed . Moreover, further steps and processes may be performed in addition to and between, before or after the aforementioned steps .

[0039] In a possible embodiment of the method, the wall structure comprises a refractive index of no more than 1 . 08 . This makes it possible to provide a critical angle of smaller than 40 ° 2024PF00587 12 for total internal reflection occurring at the wall structure , and thus to promote a high contrast between the pixels .

[0040] With respect to providing a low refractive index such as the one mentioned above , it is provided according to a further embodiment that the wall structure is formed from an aerogel material . This may be a silica aerogel material .

[0041] In a further embodiment , the forming of the wall structure comprises performing a 3D printing process . In this way, the grid-shaped wall structure may be formed with a desired configuration and shape in a reliable manner . In this process , a respective 3D printer is applied . The 3D printing process may be a micro-stereolithography or a two-photon-polymeri zation process .

[0042] In relation to performing a 3D printing process and forming the wall structure from an aerogel material , a starting or precursor material may be printed on the radiation-emitting semiconductor chip with the shape of the wall structure to be produced . The starting material may be a sol-gel material . Afterwards , postprocessing may be performed such that the starting material is converted into the aerogel material . The postprocessing may include supercritical drying .

[0043] In a further embodiment , at least a part of the cover elements is formed from a conversion material for radiation conversion . In this way, the optoelectronic component may be produced in such a way that the optoelectronic component comprises cover elements from which at least a part is configured as conversion element .

[0044] It is also possible to form all cover elements from the same conversion material for radiation conversion . Alternatively, reference is made to the possibility of forming the cover elements from di f ferent materials . 2024PF00587 13

[0045] In a further embodiment , the forming of the cover elements comprises performing a dispensing process . Here , respective portions of a material such as a conversion material for radiation conversion, or respective portions of di f ferent materials , may be dispensed and thus introduced into the openings of the wall structure to form the cover elements . In this process , a dispenser or micro-dispenser is applied .

[0046] In an alternative embodiment , which may be considered for producing the cover elements from the same material or same conversion material for radiation conversion, the following procedure may be applied . This procedure comprises forming a grid-shaped photoresist structure arranged on the wall structure , forming a continuous cover layer covering the radiation-emitting semiconductor chip, the wall structure and the photoresist structure , and removing the photoresist structure , thereby removing a part of the cover layer and structuring the cover layer into the cover elements . In this embodiment , the forming of the continuous cover layer may be reali zed by carrying out a simple process such as spray coating . The previous forming of the grid-shaped photoresist structure may comprise applying a continuous photoresist layer covering the wall structure and the radiation-emitting semiconductor chip, and subsequently performing lithographic structuring of the photoresist layer . The removing of the photoresist structure , which is accompanied by removing or li fting of f of a part of the cover layer and thus providing the cover elements , may be carried out by dry etching .

[0047] In a further embodiment , the method comprises arranging the radiation-emitting semiconductor chip on a substrate prior to the forming of the grid-shaped wall structure and of the cover elements on the radiation-emitting semiconductor chip . By the arranging of the radiation-emitting semiconductor chip on the substrate , the radiation-emitting semiconductor chip may be mechanically and electrically connected to the substrate . The substrate may be an electronic semiconductor chip for electrically driving the radiation-emitting semiconductor 2024PF00587 14 chip . Alternatively, the substrate may be a wafer from which an electronic semiconductor chip for driving the radiationemitting semiconductor chip may be formed by singulation .

[0048] The latter configuration may be provided in relation to a j oint production of a plurality of optoelectronic components . Here , a plurality of radiation-emitting semiconductor chips may be arranged on the wafer, and subsequently a grid-shaped wall structure and cover elements may be formed on each of the radiation-emitting semiconductor chips . Afterwards , the wafer may be singulated into a plurality of system-on-chips , i . e . a plurality of electronic semiconductor chips each being equipped with a radiation-emitting semiconductor chip .

[0049] The optoelectronic component produced with the method may comprise further constituent parts such as the ones described above , i . e . a carrier, a housing body, a further wall structure and a reflective encapsulation material . In this regard, the production method may comprise mounting the electronic semiconductor chip equipped with the radiation-emitting semiconductor chip on the carrier, wherein the carrier already comprises the housing body arranged thereon, and performing wirebonding to electrically connect the electronic semiconductor chip to the carrier . Thereafter, processes such as forming the further wall structure on the electronic semiconductor chip and forming the reflective encapsulation material in an area between the further wall structure and the housing body may be performed . The forming of the grid-shaped wall structure and cover elements on the radiation-emitting semiconductor chip may be performed before these processes . Alternatively, the forming of the grid-shaped wall structure and cover elements on the radiation-emitting semiconductor chip may be performed after the arranging of the electronic semiconductor chip on the carrier and the wirebonding, and before the forming of the further wall structure and the forming of the reflective encapsulation material . 2024PF00587 15

[0050] In this context , too , reference is made to the possibility of j oint production . Here , the carrier and the housing body may have dimensions and a layout for a plurality of optoelectronic components . Moreover, a plurality of electronic semiconductor chips each equipped with a respective radiationemitting semiconductor chip may be mounted on the carrier, and the steps of wirebonding, forming the further wall structure and applying the reflective encapsulation material may be performed for each of the electronic semiconductor chips and optoelectronic components . Also in this regard, the forming of the grid-shaped wall structure and cover elements , here on each of the radiation-emitting semiconductor chips , may be performed before these processes , or after the arranging of the electronic semiconductor chips on the carrier and the wirebonding . The resulting assembly being present after all these processes may then be singulated into individual optoelectronic components by separating the housing body and carrier .

[0051] The advantageous configurations and developments of the invention explained above and / or presented in the dependent claims may - apart from, for example , in cases of clear dependencies or incompatible alternatives - be employed individually or else in any desired combination with one another .

[0052] The above-described properties , features and advantages of this invention and the way in which they are achieved will become clearer and more clearly understood in association with the following description of exemplary embodiments which are explained in greater detail in association with the schematic drawings , in which :

[0053] Figures 1 and 2 show a lateral view and a top view of an optoelectronic component ;

[0054] Figure 3 shows a lateral view of constituent parts of the optoelectronic component including a driver chip and a pixelat- ed LED chip, wherein the LED chip is provided with a grid- 2024PF00587 16 shaped wall structure and separate conversion elements for radiation conversion;

[0055] Figure 4 shows a top view of the wall structure and conversion elements ;

[0056] Figures 5 and 6 show perspective views of the LED chip without and with the grid-shaped wall structure ;

[0057] Figure 7 shows a representation of a conversion material ;

[0058] Figure 8 shows a representation of an aerogel material ;

[0059] Figure 9 shows an enlarged lateral view of the driver chip and LED chip in the area of a conversion element , indicating a reflection of light radiation;

[0060] Figures 10 to 15 illustrate method sequences for producing the optoelectronic component ; and

[0061] Figure 16 and 17 show a lateral view and a top view of a further optoelectronic component .

[0062] Possible configurations of an optoelectronic component 100 and of a corresponding production method are described with reference to the following schematic figures . It is pointed out that the schematic figures may not be true to scale . Therefore , components , elements and structures shown in the figures may be illustrated with exaggerated si ze or si ze reduction in order to af ford a better understanding . It is furthermore pointed out that features and details which are described in relation to one configuration may also be applied in relation to other configurations , and that several configurations and their features may be combined with one another . Corresponding features may thus be described in detail only in relation to one configuration . The figures include lateral sectional views and top view illustrations . In the top view illustrations , sectional lines are indicated which refer to 2024PF00587 17 sectional planes of associated lateral views . With regard to the figures , it is additionally pointed out that in lateral views , sides of components ( such as a carrier 150 ) located at the top are referred to as " front side" , and corresponding sides located at the bottom are referred to as "back side" . Similarly, the terms " front-side" and "back-side" are used in relation to components present there ( such as contacts ) .

[0063] Figures 1 and 2 illustrate a lateral sectional view and a top view of an optoelectronic component 100 according to a possible configuration . The optoelectronic component 100 comprises a monolithic pixelated radiation-emitting semiconductor chip 110 configured to generate light radiation 200 ( see figure 3 ) and an electronic semiconductor chip 140 configured to electrically drive the radiation-emitting semiconductor chip 110 . The radiation-emitting semiconductor chip 110 is arranged on the electronic semiconductor chip 140 , and is further mechanically and electrically connected to the electronic semiconductor chip 140 .

[0064] The radiation-emitting semiconductor chip 110 is configured as pixelated LED chip ( light-emitting diode ) . The designation LED chip 110 is therefore used in the following . On account of the pixelated LED chip 110 , the optoelectronic component 100 may also be referred to as pixelated LED module . The electronic semiconductor chip 140 may also be referred to as driver IC ( integrated circuit ) or driver chip . For the following description, the designation driver chip 140 is applied . The LED chip 110 together with the driver chip 140 constitute a so-called system-on-chip ( SOC ) .

[0065] The driver chip 140 comprises , for the purpose of electrically driving the LED chip 110 so that the latter emits light radiation 200 , non-depicted electronic circuit components . The driver chip 140 may be reali zed in CMOS technology ( com- plementarily metal-oxide-semiconductor ) . The driver chip 140 may furthermore be reali zed as AS IC-chip ( applicationspeci fic integrated circuit ) . The LED chip 110 is arranged on 2024PF00587 18 a front side of the driver chip 140 with a back side of the same . With reference to the aforementioned mechanical and electrical connection of the two semiconductor chips 110 , 140 , the LED chip 110 comprises back-side contacts that are connected to front-side contacts of the driver chip 140 using an electrically conductive connection material such as solder (not illustrated) . Via the connection established in this way, the driver chip 140 may perform the electrical control of the LED chip 110 .

[0066] The optoelectronic component 100 further comprises , as shown in figure 1 , a carrier 150 supporting the driver chip 140 . The driver chip 140 is arranged on a front side of the carrier 150 with a back side of the same . The carrier 150 may be reali zed as printed circuit board ( PCB ) .

[0067] The carrier 150 comprises , in addition to an electrically insulating carrier material or PCB material such as FR4 ( flame retardant ) , an electrical contact structure 151 formed from a metallic material . The contact structure 151 comprises contact elements at a front side and at an opposite back side of the carrier 150 . These contact elements are connected by through contacts of the contact structure 151 vertically extending through the carrier 150 . The back-side contact elements of the contact structure 151 are used to contact the optoelectronic component 100 in order to supply the optoelectronic component 100 , i . e . the driver chip 140 and via this the LED chip 110 , with electrical energy, and to transmit electrical control signals to the optoelectronic component 100 or driver chip 140 for controlling the lighting operation . For this purpose , the driver chip 140 is electrically connected to the contact structure 151 using bond wires 190 . The bond wires 190 are connected to front-side contact elements of the contact structure 151 and further non-depicted front-side contacts of the driver chip 140 . As illustrated in figure 2 , the bond wires 190 may be electrically connected to the driver chip 140 in the area of its entire circumference . 2024PF00587 19

[0068] As indicated in figure 1 , the carrier 150 additionally comprises a thermally conductive heat dissipation structure 152 provided for the driver chip 140 . The heat dissipation structure 152 , which may be formed from the same metallic material as the contact structure 151 , comprises a sheet-like contact element both at the front side and back side of the carrier 150 , with these contact elements being connected to each other via through-contacts . The driver chip 140 is arranged on the front-side contact element of the heat dissipation structure 152 . At this location, the driver chip 140 may be fixed to the heat dissipation structure 152 using a non-depicted adhesive .

[0069] The optoelectronic component 100 illustrated in figures 1 and 2 further comprises a housing body 160 arranged on the front side of the carrier 150 . The housing body 160 may be formed from a plastic material , and surrounds an area in which the driver chip 140 is located on the carrier 150 . The housing body 160 is spaced apart from the driver chip 140 . The thickness of the housing body 160 is such that the housing body 160 proj ects over the driver chip 140 , the LED chip 110 and further components 120 , 130 located on the LED chip 110 , which are described in detail below .

[0070] A further constituent part of the optoelectronic component 100 is a wall structure 170 arranged on the front side of the driver chip 140 . The wall structure 170 , which may also be referred to as dam, comprises a surrounding frame shape , and surrounds an interior area in which the LED chip 120 is located on the driver chip 140 . The wall structure 170 is spaced apart from the LED chip 110 , and may be formed from a silicone material . The wall structure 170 has such a thickness that the wall structure 170 proj ects over the LED chip 110 and the components 120 , 130 located thereon .

[0071] The optoelectronic component 100 further comprises a reflective encapsulation material 180 in which the bond wires 190 are embedded for mechanical protection . The encapsulation ma- 2024PF00587 20 terial 180 fills a surrounding area, which is limited by the housing body 160 and the wall structure 170 when seen in top view ( see figure 2 ) . The interior area enclosed by the wall structure 170 is free of the encapsulation material 180 . The encapsulation material 180 adj oins the wall structure 170 and, laterally thereof , the front side of the driver chip 140 and a lateral circumference of the driver chip 140 . The encapsulation material 180 also adj oins the front side of the carrier 150 , and the housing body 160 at lateral interior sides . Seen in top view, the driver chip 140 laterally to the wall structure 170 and the bond wires 190 are covered by the encapsulation material 180 . This condition is taken into account in figure 2 in that the contour of the driver chip 140 and the bond wires 190 are shown as dashed lines .

[0072] The encapsulation material 180 may comprise a radiationtransmitting basic or matrix material such as a silicone material and reflective particles contained therein (not illustrated) . In production of the optoelectronic component 100 , the encapsulation material 180 is applied in flowable form . In this process , the wall structure 170 serves as a barrier that prevents the encapsulation material 180 from entering the interior area surrounded by the wall structure 170 .

[0073] Figure 3 shows a lateral sectional view of the optoelectronic component 100 in the area of the LED chip 110 , with only a part of the driver chip 140 being depicted . The LED chip 110 comprises , at a front side , a plurality of emission regions 111 that are separately electrically drivable . Moreover, a grid-shaped wall structure 120 and a plurality of separate cover elements 130 are arranged on the front side of the LED chip 110 . These components 120 , 130 are illustrated in top view in figure 4 . Both the wall structure 120 and the cover elements 130 are radiation-transmitting .

[0074] The emission regions 111 of the LED chip 110 may also be referred to as chip pixels . The emission regions 111 are configured to generate light radiation 200 , which in the present 2024PF00587 21 case is primary light radiation 200 ( see figure 3 ) . Each of the emission regions 111 may, through respective electrical driving of the LED chip 110 by the driver chip 140 , generate and emit the primary light radiation 200 . The light radiation 200 may thereby substantially be emitted from a front-side surface of the emission regions 111 . As becomes further apparent from the perspective view of the LED chip 110 in figure 5 , the emission regions 111 are arranged next to each other in the form of a matrix of rows and columns . Moreover, the LED chip 110 comprises a grid-shaped trench structure 112 at its front side between the emission regions 111 so that the emission regions 111 are present in the form of protruding semiconductor regions of the LED chip 110 . The trench structure 112 is constituted by a plurality of connected or merging trenches . The trench structure 112 comprises a rectangular geometry, according to which its trenches extend in two mutually perpendicular directions , so that the emission regions 111 comprise a rectangular or square outline when seen from above . The LED chip 110 comprises a rectangular non-square outline ( see figure 2 ) . The LED chip 110 may further be configured as follows :

[0075] The LED chip 110 may comprise a semiconductor layer sequence . Each emission region 111 may comprise a front-side semiconductor region of a first conductivity type , an active zone for generating light radiation 200 and a part of a continuous semiconductor region of a second conductivity type , the latter being provided for all emission regions 111 . The first conductivity type may be a n-conductivity, and the second conductivity type may be a p-conductivity . The emission regions 111 may further comprises a roughened surface to improve light extraction . The surface roughening may be formed by etching using KOH in the production of the LED chip 110 ( respectively not illustrated) .

[0076] The grid-shaped wall structure 120 located on the LED chip 110 surrounds openings 121 via which the LED chip 110 and thus the emission regions 111 are exposed . This becomes ap- 2024PF00587 22 parent from the perspective illustration of figure 6 , showing the LED chip 110 and the wall structure 120 arranged thereon . The openings 121 are each associated with one of the emission regions 111 of the LED chip 110 , so that each emission region 111 is exposed through a respective one of the openings 121 . The wall structure 120 is constituted by a plurality of connected or merging walls . The wall structure 120 comprises a rectangular geometry, according to which its walls extend in two mutually perpendicular directions , so that the openings 121 comprise a rectangular or square outline when seen from above .

[0077] The wall structure 120 is located in the area of the trench structure 112 of the LED chip 110 and fills the trench structure 112 . The wall structure 120 thereby proj ects out of the trench structure 112 so that the wall structure 120 protrudes from the LED chip 110 . Moreover, the grid shape of the wall structure 120 corresponds to the grid shape of the trench structure 112 . In this way, the outlines of the openings 121 of the wall structure 120 correspond to the outlines of the emission regions 111 of the LED chip 110 , and the openings 121 , similar to the emission regions 111 , are arranged next to each other in the form of a matrix of rows and columns . The wall structure 120 further comprises a closed circumferential frame shape at the edge , constituted by four adj oining walls that extend along the edge of the wall structure 120 . The overall wall structure 120 comprises , corresponding to the LED chip 110 , a rectangular non-square outline when seen from above ( see figures 2 and 4 ) .

[0078] As further shown in figures 3 and 4 , the cover elements 130 are arranged on the LED chip 110 in the openings 121 of the grid-shaped wall structure 120 . In each opening 121 , one cover element 130 is present that covers and adj oins a respective emission region 111 of the LED chip 110 . The cover elements 130 also laterally adj oin interior sides of the wall structure 120 . The cover elements 130 are spatially separated from one another by the wall structure 120 . The openings 121 2024PF00587 23 of the wall structure 120 are partially filled with the cover elements 130 so that the wall structure 120 protrudes from the cover elements 130 . Deviating from the schematic representation in figure 3 ( and other figures ) , a di f ferent or smaller protrusion of the wall structure 120 in relation to the cover elements 130 may be present ( see figure 9 ) .

[0079] In the optoelectronic component 100 , an emission region 111 of the LED chip 110 and an associated cover element 130 arranged thereon constitute a light-emitting pixel 105 . Similar to the emission regions 111 of the LED chip 110 and openings 121 of the wall structure 120 , the cover elements 130 and pixels 105 comprise a rectangular or square outline when seen from above , and are arranged in the form of a matrix of rows and columns ( see figures 2 and 4 ) . The wall structure 120 , which surrounds the cover elements 130 and thus pixels 105 when viewed from above , may also be referred to as pixel dam .

[0080] With regard to the cover elements 130 , a configuration is provided in which the cover elements 130 are reali zed in the form of a conversion element for radiation conversion . Accordingly, the designation conversion elements 130 is applied in the following . The conversion elements 130 are furthermore formed from the same conversion material 230 for radiation conversion ( see figure 7 ) . In lighting operation of the optoelectronic component 100 , selected emission regions 111 of the LED chip 110 may be electrically driven to generate and emit primary light radiation 200 with which associated conversion elements 130 may be irradiated or irradiated through, and the primary light radiation 200 may be at least partially converted into secondary light radiation via the associated conversion elements 130 . In this way, the respective conversion elements 130 and thus pixels 105 may emit the primary and secondary light radiation in the form of a combined or mixed light radiation 201 . This functionality is indicated in figure 3 in relation to one emission region 111 , conversion element 130 and therefore pixel 105 of the optoelectronic component 100 . 2024PF00587 24

[0081] In the present configuration, the primary light radiation 200 is a blue light radiation, and the converted secondary light radiation is a yellow light radiation . As a consequence , in total a white light radiation 201 may be emitted from operated pixels 105 of the optoelectronic component 100 . In this way, the optoelectronic component 100 may be used e . g . in a headlamp of an adaptive front-lighting system (AFS ) of a vehicle . Here , di f ferent light distributions may be generated in an illumination area in combination with appropriate imaging optics by respectively driving emission regions 110 of the LED chip 110 and thus operating pixels 105 of the optoelectronic component 100 . Another exemplary application for the optoelectronic component 100 is in a proj ector ( respectively not illustrated) .

[0082] Figure 7 shows a representation of the conversion material 230 from which the conversion elements 130 are formed . The conversion material 230 comprises a radiation-transmitting basic or matrix material 231 and phosphor particles 232 contained therein . The matrix material 231 may be a silicone material . The aforementioned radiation conversion is ef fected by the phosphor particles 232 . The conversion material 230 may be a highly filled conversion material 230 that comprises a proportion of phosphor particles 232 in the range of 70% .

[0083] With reference to the grid-shaped wall structure 120 located on the LED chip 110 and surrounding the conversion elements 130 , a configuration made of an aerogel material 220 , i . e . in this case a silica aerogel material 220 , is employed . For way of illustration, figure 8 shows a representation of such an aerogel material 220 . The aerogel material 220 has a high porosity, and comprises a lattice or pore structure with a small proportion of solid . The aerogel material 220 therefore substantially consists of air . Figure 8 illustrates this material characteristic with solid-state particles 221 connected in a lattice . In the silica aerogel material 220 , the particles 221 are formed from silicon oxide ( SiO2 ) . 2024PF00587 25

[0084] The silica aerogel material 220 used for the wall structure 120 and therefore the wall structure 120 may comprise a low or ultra-low refractive index . The refractive index may be below 1 . 1 , and may be in the range of 1 . 008 to 1 . 08 . This makes it possible to reliably suppress or minimi ze the occurrence of optical crosstalk between the pixels 105 , i . e . light emission in the area of non-operated pixels 105 whose associated emission regions 111 of the LED chip 110 are not electrically driven and turned of f . The optoelectronic component 100 may thus provide lighting operation and illumination of an illumination area with high or enhanced pixel contrast .

[0085] The aforementioned property is based on the fact that with a low refractive index of the wall structure 120 , a large di fference in refractive index between the conversion elements 130 and the wall structure 120 may be present . This may result in a small critical angle for total internal reflection occurring at the wall structure 120 . Accordingly, a large portion of light radiation (primary and secondary light radiation) emitted and propagating towards the wall structure 120 in the area of or within the conversion elements 130 may be incident on the wall structure 120 at an angle that exceeds the critical angle for total internal reflection, and may thus be subj ect to total internal reflection . In this way, emission of light radiation may be restricted or substantially restricted to the areas of the respectively operated radiation-emitting pixels 105 of the optoelectronic component 100 , whereas guiding of light radiation in between the pixels 105 , and accordingly light emission from non-operated pixels 105 , does not or substantially does not occur . The greater the di f ference in refractive index, the smaller is the critical angle and the greater is the proportion of totally reflected light radiation . In the present case , a critical angle in the range of or below 40 ° may be achieved .

[0086] For way of illustration, figure 9 shows a lateral view of the optoelectronic component 100 in the area of a conversion ele- 2024PF00587 26 ment 130 , with the LED chip 110 and wall structure 120 only being partially depicted . The conversion element 130 comprises a concavely curved surface that may be due to wetting of interior sides of the wall structure 120 during production . This characteristic may be present for all conversion elements 130 of the optoelectronic component 100 . To schematically illustrate the occurrence of total internal reflection, figure 9 depicts two light beams 205 , 206 . The light beam 205 propagates in the conversion element 130 towards a wall of the wall structure 120 and is incident thereon at an angle corresponding to the critical angle 0Cfor total internal reflection . As a consequence , the light beam 205 is refracted away from the perpendicular to the interface between the conversion element 130 and wall structure 120 at an angle of refraction 0Oof 90 ° , with the result that the light beam 205 runs parallel to this interface . The other light beam 206 shown in figure 9 propagates in the conversion element 130 towards a wall of the wall structure 120 and is incident thereon at an angle of incidence 02exceeding the critical angle 0Cfor total internal reflection . As a consequence , the light beam 206 is subj ect to total internal reflection, and is thus refracted back and reflected from the wall structure 120 at an angle of reflection corresponding to the angle of incidence 0± .

[0087] Using Snell ' s law of refraction, the critical angle 0Cis determined as follows :

[0088] 0C= sin-1(n2 / n2) ( 1 )

[0089] In the above formula ( 1 ) and applied to the situation shown in figure 9 , n2is the refractive index of the optically denser medium, in this case the conversion material 230 of the conversion element 130 , and n2is the refractive index of the optically thinner medium, in this case the silica aerogel material 220 of the wall structure 120 . 2024PF00587 27

[0090] The highly filled conversion material 230 may comprise a refractive index n2of 1 . 6 . Provided that the aerogel material 220 comprises a refractive index n2of 1 . 02 , this results in the following critical angle :

[0091] 6C= sin’1( 1 • 02 / 1 . 6 ) = 39 . 61 ( 2 )

[0092] For the case that an even lower refractive index of the aero- gel material 220 and / or an even higher refractive index of the conversion material 230 may be achieved or set , the crit- ical angle 0Cmay be even lower .

[0093] Preventing or minimi zing the crosstalk between the pixels 105 of the optoelectronic component 100 using total internal reflection of light radiation at respective interfaces between the conversion elements 130 and wall structure 120 may be effected without loss of brightness as no absorbing material is used to block the crosstalk . In this way, operated pixels 105 may feature a high luminance and brightness . In addition, the provision of the wall structure 120 and separate conversion elements 130 makes it possible to not only restrict light emission to operated pixels 105 , but may also suppress or minimi ze emission of light radiation from edge pixels 105 in direction of the other wall structure 170 located on the driver chip 140 ( see figures 1 and 2 ) , and therefore the occurrence of light reflection at that wall structure 170 . In this way, a glaring ef fect caused by such light reflection may also be suppressed or minimi zed ( respectively not illustrated) . Moreover, the silica aerogel material 220 has a high temperature stability, and may be resistant to temperatures up to at least 600 ° C . The contrast performance may thus be maintained over the entire li fetime of the optoelectronic component 100 .

[0094] As far as the layout of constituent parts of the optoelectronic component 100 such as the LED chip 110 , the gridshaped wall structure 120 and the conversion elements 130 is 2024PF00587 28 concerned, the following exemplary specifications and dimensions may be applied:

[0095] The LED chip 110 and thus the wall structure 120 arranged thereon may comprise lateral dimensions in the millimeter or two-digit millimeter range. Deviating from the schematic illustrations in figures 2, 3, 4, 5, 6, the optoelectronic component 100 may comprise a far greater number of emission regions 111 of the LED chip 110, openings 121 of the wall structure 120, conversion elements 130 and pixels 105. This number may be in the five-digit range, or in a different or larger range. The LED chip 110 together with the wall structure 120 may comprise a total vertical thickness in the two- digit micrometer range, e.g. in the range of 50pm. The emission regions 111 of the LED chip 110 may comprise lateral dimensions in the two-digit micrometer range, e.g. in the range of 40pm. The same applies to the openings 121 of the wall structure 120, and therefore to the conversion elements 130 and pixels 105. As for the wall structure 120, its walls may comprise a lateral width in the micrometer range, e.g. a width in the range of 3pm to 5pm. The same applies to the trenches of the trench structure 112 of the LED chip 110. The LED chip 110 may comprise a vertical thickness in the two- digit micrometer range, e.g. in the range of 20pm. A vertical depth of the trench structure 112 may be in the micrometer or two-digit micrometer range, e.g. in the range of 10pm. A vertical thickness of the wall structure 120 may be in the two- digit micrometer range. In this respect, a protrusion of the wall structure 120 from the emission regions 111 or frontside surfaces of the same may be in the range of 25pm to 30pm. The conversion elements 130 may comprise a thickness in the two-digit micrometer range, e.g. in the range of 15pm to 20pm. The wall structure 120 comprising the above-mentioned dimensions in the micrometer or two-digit micrometer range may also be referred to as micro-wall structure or micro-dam.

[0096] For producing an optoelectronic component 100 with the aforementioned configuration, method sequences as described in the 2024PF00587 29 following with reference to figures 10 to 15 may be applied . It is pointed out that only a portion of the steps explained in the following are represented in these figures .

[0097] Figures 10 to 13 show steps of a possible method sequence for producing an optoelectronic component 100 with the aid of lateral views . In the method, a pixelated LED chip 110 is provided, and the LED chip 110 is arranged on a substrate , as shown in figure 10 . The substrate may be a driver chip 140 for electrically operating the LED chip 110 . The mounting of the LED chip 110 on the driver chip 140 , in which back-side contacts of the LED chip 110 may be connected to front-side contacts of the driver chip 140 , may comprise carrying out a soldering process . The LED chip 110 comprises the abovedescribed configuration with the front-side emission regions 111 and grid-shaped trench structure 112 . The driver chip 140 with the LED chip 110 mounted thereon is also referred to as SOC ( system-on-chip ) component 110 , 140 in the following .

[0098] Subsequently, as shown in figure 11 , a grid-shaped wall structure 120 consisting of a silica aerogel material 220 is formed on the front side of the LED chip 110 . The wall structure 120 comprises the above-described configuration with the openings 121 exposing the LED chip 110 and its emission regions 111 . Moreover, the wall structure 120 fills the trench structure 112 of the LED chip 110 .

[0099] Forming the grid-shaped wall structure 120 on the LED chip 110 comprises performing a 3D printing process using a 3D printer . In this context , figure 11 indicates a print head 291 of the employed 3D printer . In the printing process , a starting or precursor material of the aerogel material 220 is deposited on the LED chip 110 with the intended shape of the wall structure 120 . The starting material may be a sol-gel material comprising silica particles . Thereafter, postprocessing may be performed such that the printed starting material is converted into the silica aerogel material 220 . The postprocessing may include supercritical drying, in which a 2024PF00587 30 liquid or solvent content of the starting material may be removed with the result that the aerogel material 220 with the pore structure ( see figure 8 ) and thus the wall structure 120 are provided . The applied 3D printing process may be a microstereolithography or a two-photon-polymeri zation process . In this way, the wall structure 120 comprising the above- mentioned dimensions ( e . g . a width of its walls in the micrometer range ) may be reliably formed .

[0100] Following this , a plurality of cover or conversion elements 130 are formed on the LED chip 110 in the area of the openings 121 surrounded by the wall structure 120 , as shown in figure 12 . For this purpose , a dispensing or micro-dispensing process is performed in which portions of a conversion material 230 in a flowable state are introduced into the openings 121 of the wall structure 120 . To this end, a dispenser or micro-dispenser is employed, of which a dispenser head 292 is indicated in figure 12 . Using such a dispenser, the conversion material 230 may be applied with a dot or drop si ze of smaller than 20pm . It is possible to apply the conversion material 230 to the openings 121 one after another, or to apply the conversion material 230 to several openings 121 together . In this way, or after the conversion material 230 has hardened, the SOC component 110 , 140 equipped with the wall structure 120 and conversion elements 130 is provided, as shown in figure 13 .

[0101] As an alternative , the substrate on which the LED chip 110 is mounted ( see figure 10 ) may be a wafer 240 from which a driver chip 140 for electrically driving the LED chip 110 may be formed by singulation . This configuration may be applied in relation to a j oint production of SOC components 110 , 140 . In this respect , a plurality of LED chips 110 are mounted on and soldered to the wafer 240 , the wafer 240 comprising respective electronic circuit components and front-side contacts , and then the processes as described above , i . e . forming of the wall structure 120 and conversion elements 130 , are performed in relation to each of the LED chips 110 . Thereafter, 2024PF00587 31 the wafer 240 is singulated, thus providing a plurality of the SOC components 110 , 140 with the configuration illustrated in figure 13 .

[0102] In order to provide the optoelectronic component 100 shown in figures 1 and 2 , further processes are carried out . This may include mounting the SOC component 110 , 140 equipped with the wall structure 120 and conversion elements 130 on a carrier 150 , wherein the carrier 150 may already comprise a housing body 160 arranged thereon, subsequently performing wirebonding to electrically connect the driver chip 140 to the carrier 150 , subsequently forming a further wall structure 170 on the driver chip 140 surrounding the LED chip 110 , and subsequently applying or forming a reflective encapsulation material 180 in an area between the wall structure 170 and the housing body 160 , thereby encapsulating bond wires 190 of bond wire connections established in the wirebonding process . The forming of the wall structure 170 may comprise performing a dispensing process . The same applies to the forming of the encapsulation material 180 . Alternatively, another process such as casting may be performed with regard to the encapsulation material 180 .

[0103] It is furthermore possible to perform aforementioned steps in a di f ferent order . In this regard, the SOC component 110 , 140 not ( yet ) equipped with the wall structure 120 and conversion elements 130 may be arranged on the carrier 150 provided with the housing body 160 , and subsequently wirebonding may be performed . Then, the forming of the grid-shaped wall structure 120 and conversion elements 130 on the LED chip 110 may be carried out . This may be followed by the forming of the further wall structure 170 and encapsulation material 180 .

[0104] With regard to processes carried out in relation to the carrier 150 and housing body 160 , a j oint production may be considered, as well . The carrier 150 and housing body 160 may thereby comprise dimensions and a layout for a plurality of optoelectronic components 100 to be produced . Moreover, a 2024PF00587 32 plurality of SOC components 110 , 140 equipped or not equipped with the wall structure 120 and conversion elements 130 may be arranged on the carrier 150 , and subsequently wirebonding may be carried out . For the case that the SOC components 110 , 140 are not provided with the wall structure 120 and conversion elements 130 , these components 120 , 130 may then be formed on each of the LED chips 110 . Thereafter, forming of the further wall structure 170 and applying the encapsulation material 180 may be performed for each of the driver chips 140 and optoelectronic components 100 . The resulting assembly being present after performing these processes may then be singulated into a plurality of optoelectronic components 100 by separating the housing body 160 and carrier 150 .

[0105] Figures 14 and 15 illustrate , with the aid of lateral views , steps of another possible method sequence for producing an optoelectronic component 100 that di f fers from the one described above in the producing of the conversion elements 130 . In this regard, processes are first carried out such as arranging a LED chip 110 on a substrate , e . g . a driver chip 140 , and forming a grid-shaped wall structure 120 on the LED chip 110 by 3D printing ( see figures 10 and 11 ) . Thereafter, as shown in figure 14 , a grid-shaped photoresist structure 250 of a photoresist material is formed on the wall structure 120 . The photoresist structure 250 thereby comprises a grid shape corresponding to the grid shape of the wall structure 120 . Forming the photoresist structure 250 may comprise forming a continuous photoresist layer covering the wall structure 120 and LED chip 110 , and subsequently performing lithographic structuring ( i . e . exposure and development ) of the photoresist layer .

[0106] This is followed by forming a continuous cover layer 235 covering the LED chip 110 , wall structure 120 and photoresist structure 250 , as shown in figure 15 . The cover layer 235 is formed from a conversion material 230 , which is applied in a flowable state by spray coating . In this context , a spray coater is employed, of which a spray coater head 293 is indi- 2024PF00587 33 cated in figure 15 . Afterwards or after the cover layer 235 has hardened, the photoresist structure 250 is removed by performing a dry etching process , also referred to as plasma etching . This is accompanied by removing and li fting of f of a part of the cover layer 235 with the result that the cover layer 235 is structured into separate conversion elements 130 located in the openings 121 of the wall structure 120 . This produces the SOC component 110 , 140 equipped with the wall structure 120 and conversion elements 130 illustrated in figure 13 .

[0107] Similar to the above-described method sequence , a j oint production may be applied in which a plurality of LED chips 110 is mounted on a wafer 240 , and then the producing of the wall structure 120 and conversion elements 130 is performed in relation to each of the LED chips 110 . In this variant , respective photoresist structures 250 may be produced on the wall structures 120 located on the LED chips 110 by forming a continuous photoresist layer and performing lithographic structuring of the same . Thereafter, conversion elements 130 arranged on the LED chips 110 may be produced by forming a continuous cover layer 235 using spray coating and subsequently structuring the cover layer 235 into the conversion elements 130 by removing or etching the photoresist structures 250 , thereby li fting of f parts of the cover layer 235 . Afterwards , the wafer 240 may be singulated into a plurality of the SOC components 110 , 140 with the configuration shown in figure 13 .

[0108] In order to provide the optoelectronic component 100 shown in figures 1 and 2 , further processes are also carried out accordingly . This may include mounting the SOC component 110 , 140 equipped with the wall structure 120 and conversion elements 130 on a carrier 150 comprising a housing body 160 , performing wirebonding to electrically connect the driver chip 140 to the carrier 150 , forming a further wall structure 170 on the driver chip 140 surrounding the LED chip 110 , and applying a reflective encapsulation material 180 in an area 2024PF00587 34 between the wall structure 170 and the housing body 160 . Moreover, a j oint production may be applied . Here , the carrier 150 and housing body 160 may comprise a layout for a plurality of optoelectronic components 100 . Moreover, a plurality of SOC components 110 , 140 equipped with the wall structure 120 and conversion elements 130 may be arranged on the carrier 150 , and then wirebonding, forming of the further wall structure 170 and applying the encapsulation material 180 may be performed for each of the optoelectronic components 100 . The resulting assembly being present after this may then be singulated into a plurality of optoelectronic components 100 .

[0109] A possible variant of an optoelectronic component 100 that deviates from the configuration described above consists in providing cover elements 130 formed from di f ferent materials . This makes it possible to reali ze a configuration of an optoelectronic component 100 in which light radiations with di fferent colors may be generated and emitted by its pixels 105 . In this context , a display application such as a RGB display application may be implemented .

[0110] By way of illustration, figures 16 and 17 show a lateral sectional view and a top view of an optoelectronic component 100 according to a further possible configuration . The optoelectronic component 100 depicted here again comprises a SOC component with the configuration described above , i . e . with a monolithic pixelated LED chip 110 arranged on a driver chip 140 . The LED chip 110 is configured to generate primary light radiation 200 and comprises , at a front side , a plurality of emission regions 111 that are separately electrically drivable , and a grid-shaped trench structure 112 between the emission regions 111 . The driver chip 140 is configured to electrically drive the LED chip 110 . Moreover, a grid-shaped wall structure 120 formed from a silica aerogel material 220 and a plurality of separate cover elements 130 located in openings 121 of the wall structure 120 are arranged on the front side of the LED chip 110 . In figure 16 , only a part of the afore- 2024PF00587 35 mentioned components 110, 120, 130, 140 is illustrated. In the top view representation of figure 17, only cover elements 130 without the wall structure 120 are shown.

[0111] The cover elements 130 of the optoelectronic component 100 depicted in figures 16 and 17 are formed from different materials. Here, three different material configurations are utilized. Accordingly, three different groups or parts of cover elements 130 are present which are labeled with indices for differentiation. The cover elements 130 are also referred to as first cover elements 130-1, second cover elements 130-2 and third cover elements 130-3 in the following. In a corresponding manner, light-emitting pixels 105 of the optoelectronic component 100 being constituted by emission regions 111 of the LED chip 110 and associated cover elements 130 located thereon are labeled with indices, as well as light radiations 201 that may be emitted from the pixels 105. Similar to the cover elements 130, the pixels 105 are also referred to as first pixels 150-1, second pixels 105-2 and third pixels 105-3 in the following.

[0112] The primary light radiation 200 generated by the LED chip 110 may again be a blue light radiation. In this regard, the first and second cover elements 130-1, 130-2 may be realized as conversion elements for radiation conversion. Here, the first cover elements 130-1 may be configured to convert the blue light radiation 200 into a red light radiation 201-1, and the second cover elements 130-2 may be configured to convert the blue light radiation 200 into a green light radiation 201-2. The third cover elements 130-3 may only be radiation-transmitting and not radiation-converting, and therefore formed from a purely radiation-transmitting or clear material. In this way, in operation of the optoelectronic component 100, the first pixels 105-1 may emit the red light radiation 201-1, the second pixels 105-2 may emit the green light radiation 201-2, and the third pixels 105-3 may emit the blue light radiation 200 without the latter undergoing conversion. 2024PF00587 36

[0113] With regard to the aforementioned functionality, the first and second cover elements 130- 1 , 130-2 are formed from conversion materials for radiation conversion . These materials may comprise a configuration as described above with reference to figure 7 , and may therefore comprise a matrix material such as silicone and phosphor particles contained therein . The third cover elements 130-3 may only comprise the matrix or silicone material (not illustrated) .

[0114] Alternatively, it is possible that the primary light radiation 200 generated by the LED chip 110 is an ultraviolet (UV) light radiation . In this context , all cover elements 130 may be reali zed as conversion elements for radiation conversion . Here , the first cover elements 130- 1 may be configured to convert the UV light radiation 200 into a red light radiation 201- 1 , the second cover elements 130-2 may be configured to convert the UV light radiation 200 into a green light radiation 201-2 , and the third cover elements 130-3 may configured to convert the UV light radiation 200 into a blue light radiation 201-3 . In this configuration, all of the cover elements 130 are formed from respective conversion materials for radiation conversion .

[0115] Providing cover elements 130 formed from di f ferent materials as described above may have the ef fect that the cover elements 130 comprise di f ferent refractive indices . These refractive indices are still greater than that of the wall structure 120 formed from the silica aerogel material 220 , so that the functionality explained above with reference to figure 9 is given here , as well .

[0116] According to the top view illustration of figure 17 , the cover elements 130 and thus pixels 105 comprise a rectangular non-square outline . The same applies to the emission regions 111 of the LED chip 110 located below the cover elements 130 . The configuration is further such that a group of three pixels 105 arranged next to each other, i . e . a first pixel 105- 1 , a second pixel 105-2 and a third pixel 105-3 , constitute a 2024PF00587 37

[0117] RGB display pixel 107 with a square outline . As further indicated in figure 17 , the pixels 105 and display pixels 107 are arranged in the form of a matrix of rows and columns . Deviating from the schematic illustration in figure 17 , a far greater number of pixels 105 and display pixels 107 may be provided .

[0118] With regard to the optoelectronic component 100 illustrated in figures 16 and 17 , it is noted that the optoelectronic component 100 may also comprise further constituent parts such as a carrier supporting the SOC component 110 , 140 provided with the wall structure 120 and cover elements 130 . Moreover, a configuration may be considered in which a plurality of SOC components 110 , 140 provided with the wall structure 120 and cover elements 130 is arranged next to each other on a respective carrier ( respectively not illustrated) . As far as a production is concerned, the forming of the cover elements 130 may comprise performing a dispensing process as explained above with reference to figure 12 . In this process , portions of di f ferent materials for the forming of the first , second and third cover elements 130- 1 , 130-2 , 130-3 are introduced into the openings 121 of the wall structure 120 (not illustrated) .

[0119] Besides the embodiments described above and depicted in the figures , further embodiments are conceivable which may comprise further modi fications and / or combinations of features .

[0120] In this regard, information on materials given above is to be regarded as exemplary, so that speci fied materials may be replaced by other materials . The same applies to speci fied numerical information .

[0121] In this context , it is e . g . possible to form a wall structure 120 , instead of a silica aerogel material , from another aerogel material . 2024PF00587 38

[0122] Furthermore , elements and structures may be provided with shapes and top views that di f fer from the figures .

[0123] Although the invention has been more speci fically illustrated and described in detail by exemplary embodiments , nevertheless the invention is not restricted by the examples disclosed and other variations may be derived therefrom by a person skilled in the art , without departing from the scope of protection of the invention .

[0124] 2024PF00587 39

[0125] REFERENCE SYMBOLS

[0126] 100 optoelectronic component

[0127] 105 pixel

[0128] 107 display pixel

[0129] 110 LED chip

[0130] 111 emission region

[0131] 112 trench structure

[0132] 120 wall structure

[0133] 121 opening

[0134] 130 cover element , conversion element

[0135] 140 driver chip

[0136] 150 carrier

[0137] 151 contact structure

[0138] 152 heat dissipation structure

[0139] 160 housing body

[0140] 170 wall structure

[0141] 180 encapsulation material

[0142] 190 bond wire

[0143] 200 primary light radiation

[0144] 201 light radiation

[0145] 205 light beam

[0146] 206 light beam

[0147] 220 aerogel material

[0148] 221 solid-state particle

[0149] 230 conversion material

[0150] 231 matrix material

[0151] 232 phosphor particle

[0152] 235 cover layer

[0153] 240 wafer

[0154] 250 photoresist structure

[0155] 291 print head

[0156] 292 dispenser head

[0157] 293 spray coater head

[0158] 0Ccritical angle

[0159] 0i angle of incidence

[0160] 0Oangle of refraction

Claims

2024PF00587 40CLAIMS1. An optoelectronic component (100) comprising: a pixelated radiation-emitting semiconductor chip (110) comprising a plurality of emission regions (111) that are separately drivable; a grid-shaped radiation-transmitting wall structure(120) arranged on the radiation-emitting semiconductor chip (110) , wherein the wall structure (120) surrounds openings (121) via which the radiation-emitting semiconductor chip (110) is exposed, and wherein the openings(121) are each associated with one of the emission regions (111) of the radiation-emitting semiconductor chip (110) ; and a plurality of radiation-transmitting cover elements(130) arranged on the radiation-emitting semiconductor chip (110) , wherein the cover elements (130) are each located in one of the openings (121) surrounded by the wall structure (120) and laterally adjoin the wall structure (120) , and wherein the wall structure (120) comprises a lower refractive index than the cover elements (130) .

2. The optoelectronic component according to claim 1, wherein the wall structure (120) comprises a refractive index of no more than 1.08.

3. The optoelectronic component according to any of the preceding claims, wherein the wall structure (120) is formed from an aerogel material (220) .

4. The optoelectronic component according to any of the preceding claims,2024PF00587 41 wherein the wall structure (120) is formed from a silica aerogel material (220) .

5. The optoelectronic component according to any of the preceding claims, wherein at least a part of the cover elements (130) is configured as conversion element for radiation conversion .

6. The optoelectronic component according to any of the preceding claims, wherein the cover elements (130) are formed from the same conversion material (230) for radiation conversion.

7. The optoelectronic component according to any of claims 1 to 5, wherein the cover elements (130) comprise cover elements (130-1, 130-2, 130-3) formed from different materials.

8. The optoelectronic component according to any of the preceding claims, further comprising an electronic semiconductor chip (140) for driving the radiation-emitting semiconductor chip (110) on which the radiation-emitting semiconductor chip (110) is arranged.

9. The optoelectronic component according to claim 8, wherein the electronic semiconductor chip (140) is arranged on a carrier (150) , wherein a housing body (160) surrounding the electronic semiconductor chip (140) and the radiation-emitting semiconductor chip (110) is arranged on the carrier (150) , wherein a further wall structure (170) surrounding the radiation-emitting semiconductor chip (110) is arranged on the electronic semiconductor chip (140) , and wherein a reflective encapsulation material (180) is arranged on the carrier (150) and on the electronic semiconductor chip (140) in an area between the further wall structure (170) and the2024PF00587 42 housing (160) .

10. A method for producing an optoelectronic component (100) comprising : providing a pixelated radiation-emitting semiconductor chip (110) , wherein the radiation-emitting semiconductor chip (110) comprises a plurality of emission regions (111) that are separately drivable; forming a grid-shaped radiation-transmitting wall structure (120) arranged on the radiation-emitting semiconductor chip (110) , wherein the wall structure (120) surrounds openings (121) via which the radiation-emitting semiconductor chip (110) is exposed, and wherein the openings (121) are each associated with one of the emission regions (111) of the radiation-emitting semiconductor chip (110) ; and forming a plurality of radiation-transmitting cover elements (130) arranged on the radiation-emitting semiconductor chip (110) , wherein the cover elements (130) are each located in one of the openings (121) surrounded by the wall structure (120) and laterally adjoin the wall structure (120) , and wherein the wall structure (120) comprises a lower refractive index than the cover elements (130) .

11. The method according to claim 10, wherein the wall structure (120) comprises a refractive index of no more than 1.08.

12. The method according to any one of claims 10 or 11, wherein the wall structure (120) is formed from one of the following: an aerogel material (220) ; or2024PF00587 43 a silica aerogel material (220) .

13. The method according to any one of claims 10 to 12, wherein the forming of the wall structure (120) comprises performing a 3D printing process.

14. The method according to any one of claims 10 to 13, wherein at least a part of the cover elements (130) is formed from a conversion material (230) for radiation conversion .

15. The method according to any one of claims 10 to 14, wherein the forming of the cover elements (130) comprises performing a dispensing process.

16. The method according to any one of claims 10 to 14, wherein the forming of the cover elements (130) comprises the following: forming a grid-shaped photoresist structure (250) arranged on the wall structure (120) ; forming a continuous cover layer (235) covering the radiation-emitting semiconductor chip (110) , the wall structure (120) and the photoresist structure (250) ; and removing the photoresist structure (250) , thereby removing a part of the cover layer (235) and structuring the cover layer (235) into the cover elements (120) .

17. The method according to any one of claims 10 to 16, further comprising arranging the radiation-emitting semiconductor chip (110) on a substrate prior to the forming of the wall structure (120) and of the cover elements (130) on the radiation-emitting semiconductor chip (110) , wherein the substrate is one of the following: an electronic semiconductor chip (140) for driving the2024PF00587 - 44 - radiation-emitting semiconductor chip (110) ; or a wafer (240) from which an electronic semiconductor chip (140) for driving the radiation-emitting semicon- ductor chip (110) may be formed by singulation.

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