Semiconductor device

Abstract

This semiconductor device is provided with: an upper arm circuit section that includes a first switching element constituting an upper arm circuit, and that includes a first conductor section in which the first switching element is disposed; a lower arm circuit section that includes a second switching element constituting a lower arm circuit, and that includes a second conductor section in which the second switching element is disposed; a heat-dissipating member for dissipating heat generated from the upper arm circuit section and the lower arm circuit section; a first sheet member that is arranged between the first conductor section and the heat-dissipating member, and that is constituted of a first insulating layer and a first conductor foil; a second sheet member that is arranged between the second conductor section and the heat-dissipating member, and that is constituted of a second insulating layer and a second conductor foil; a resin member for sealing the upper arm circuit section, the lower arm circuit section, the first sheet member, and the second sheet member; and an insulating thermal conduction layer disposed between the first sheet member and the heat-dissipating member and also between the second sheet member and the heat-dissipating member. The first conductor foil and the second conductor foil each have an exposed section that is exposed from a surface on one side of the resin member. The insulating thermal conduction layer collectively covers the exposed sections. The first conductor foil and the second conductor foil have side sections respectively facing one another. The side sections are embedded in the resin member.

Description

Semiconductor device

[0001] The present invention relates to a semiconductor device.

[0002] In Patent Document 1 below, a configuration of an electric circuit body is disclosed in which a single sheet member composed of a conductor foil and an insulating layer is joined to the conductor portions of the upper and lower arms on both sides, and is connected to a heat dissipation member (water channel) via a third insulating layer.

[0003] Japanese Patent Application Laid-Open No. 2022-092545

[0004] In view of the technology described in Patent Document 1, an object of the present invention is to provide a semiconductor device that can cope with a higher voltage and realizes ensuring insulation and heat dissipation.

[0005] The semiconductor device includes an upper arm circuit portion having a first switching element that constitutes an upper arm circuit and a first conductor portion on which the first switching element is disposed, a lower arm circuit portion having a second switching element that constitutes a lower arm circuit and a second conductor portion on which the second switching element is disposed, a heat dissipation member that dissipates heat generated from the upper arm circuit portion and the lower arm circuit portion, a first sheet member disposed between the first conductor portion and the heat dissipation member and composed of a first insulating layer and a first conductor foil, a second sheet member disposed between the second conductor portion and the heat dissipation member and composed of a second insulating layer and a second conductor foil, a resin member that seals the upper arm circuit portion, the lower arm circuit portion, the first sheet member, and the second sheet member, and an insulating heat conduction layer disposed between the first sheet member and the heat dissipation member and between the second sheet member and the heat dissipation member. The first conductor foil and the second conductor foil each have an exposed portion exposed from one side surface of the resin member. The insulating heat conduction layer collectively covers the exposed portions. The first conductor foil and the second conductor foil each have side portions facing each other, and the side portions are buried in the resin member.

[0006] A semiconductor device that can cope with a higher voltage and realizes ensuring insulation and heat dissipation can be provided.

[0007] An overall perspective view of a semiconductor module according to one embodiment of the present invention. An overall perspective view of the semiconductor module as seen from the R direction in Figure 1. An exploded perspective view of a semiconductor module according to one embodiment of the present invention. An exploded perspective view of the semiconductor module as seen from the R direction in Figure 3. A perspective view of a semiconductor module with the resin component removed, according to one embodiment of the present invention. An exploded perspective view of the semiconductor module as seen from the R direction in Figure 5. A cross-sectional view of a semiconductor module according to one embodiment of the present invention. A first modified example. An overall perspective view of a semiconductor module according to the first modified example. A second modified example. A third modified example. A fourth modified example.

[0008] Embodiments of the present invention will be described below with reference to the drawings. The following description and drawings are illustrative for illustrating the present invention, and have been omitted and simplified as appropriate for clarity of explanation. The present invention can also be carried out in various other forms. Unless otherwise specified, each component may be singular or plural.

[0009] The positions, sizes, shapes, and ranges of the components shown in the drawings may not represent their actual positions, sizes, shapes, and ranges in order to facilitate understanding of the invention. Therefore, the present invention is not necessarily limited to the positions, sizes, shapes, and ranges disclosed in the drawings.

[0010] (One Embodiment and Overall Configuration) (Figures 1 to 6) The semiconductor module 100 in the semiconductor device has switching elements 109A and 109B (Figure 6, etc.), which are semiconductor elements. For example, SiC chips are used for the switching elements 109A and 109B to meet the demand for high efficiency. The switching element 109A (first switching element) is arranged between the first conductor portion 111 and the third conductor portion 113 and constitutes an upper arm circuit. The switching element 109B (second switching element) is arranged between the second conductor portion 112 and the fourth conductor portion 114 and constitutes a lower arm circuit. The switching elements 109A and 109B and each conductor portion are sealed with a resin member 110, but as shown in Figures 3 and 4, the exposed surfaces of each conductor portion are joined to the respective sheet members described later and are therefore not sealed with resin.

[0011] As shown in Figures 1 and 2, the upper arm control terminal 113A and the P main terminal 113B are terminals of the third conductor section 113 and are exposed from the resin member 110. The N main terminal 115A is a terminal of the fifth conductor section 115 and is exposed from the resin member 110. The AC main terminal 114A and the lower arm control terminal 114B are terminals of the fourth conductor section 114 and are exposed from the resin member 110.

[0012] As shown in Figures 1 to 4, the first sheet member 101 to the fourth sheet member 104 are insulating sheets that are connected (joined) to the connection surface 110A, which is the surface of the resin member 110. The first sheet member 101 covers the exposed surface of the first conductor portion 111. The second sheet member 102 covers the exposed surface of the second conductor portion 112. The third sheet member 103 covers the exposed surface of the third conductor portion 113. The fourth sheet member 104 covers the exposed surface of the fourth conductor portion 114. The first sheet member 101 to the fourth sheet member 104 may be formed integrally with the resin member 110 by connecting them to each conductor portion and resin sealing before the resin member 110 is formed, or they may be connected to each conductor portion after the resin member 110 is formed.

[0013] As shown in Figures 3 and 4, the exposed surfaces of each of the first to fourth conductor portions 111 to 114 are arranged on the same plane as the surface of the resin member 110 and are exposed. The exposed surface of the first conductor portion 111 is in close contact with and joined to the first sheet member 101 together with the resin member 110. The exposed surface of the second conductor portion 112 is in close contact with and joined to the second sheet member 102 together with the resin member 110. The exposed surface of the third conductor portion 113 is in close contact with and joined to the third sheet member 103 together with the resin member 110. The exposed surface of the fourth conductor portion 114 is in close contact with and joined to the fourth sheet member 104 together with the resin member 110.

[0014] As shown in Figures 5 and 6, the semiconductor module 100 is composed of a first conductor portion 111, a second conductor portion 112, a third conductor portion 113, a fourth conductor portion 114, and a fifth conductor portion 115. The fifth conductor portion 115 is arranged on the same plane as the third conductor portion 113. The fifth conductor portion 115 has an offset portion 115B which is arranged inward (offset) within the semiconductor module 100. The offset portion 115B is located inside the resin member 110 and is not exposed from the resin member 110.

[0015] As shown in Figure 6, a plurality of first switching elements 109A are arranged between the third conductor portion 113 and the first conductor portion 111. The first switching elements 109A are electrically connected to the first conductor portion 111 and the third conductor portion 113 by solder or the like, forming the upper arm of the semiconductor module 100. The fourth conductor portion 114 is arranged on the same plane as the third conductor portion 113. A plurality of second switching elements 109B are arranged between the fourth conductor portion 114 and the second conductor portion 112, and are electrically connected by solder or the like, forming the lower arm of the semiconductor module 100.

[0016] The first switching element 109A has a first electrode (drain) on the side connected to the third conductor portion 113 and a second electrode (source) on the side connected to the first conductor portion 111. The second switching element 109B has a first electrode (drain) on the side connected to the fourth conductor portion 114 and a second electrode (source) on the side connected to the second conductor portion 112.

[0017] The first conductor portion 111 has a connection portion 111A and is electrically connected to the fourth conductor portion 114 by solder or the like. The second conductor portion 112 has a connection portion 112A and is electrically connected to the fifth conductor portion 115 by solder or the like. The temperature sensor 108 is positioned on the surface to which the switching elements are connected in at least one of the third conductor portion 113 and the fourth conductor portion 114. Although not shown, a plurality of first switching elements 109A are electrically connected to the upper arm control terminal 113A, and a plurality of second switching elements 109B are electrically connected to the lower arm control terminal 114B, respectively, by Al wire or the like. Similarly, although not shown, the temperature sensor 108 is electrically connected to the upper arm control terminal 113A or the lower arm control terminal 114B by Al wire or the like.

[0018] As shown in Figures 5 and 6, the third conductor portion 113 has a convex shape 113C on the side opposite to the surface to which the first switching element 109A is joined. The fourth conductor portion 114 has a convex shape 114C on the side opposite to the surface to which the second switching element 109B is joined. The fifth conductor portion 115 has a convex shape 115C in the same direction as the convex shapes 113C and 114C.

[0019] The third conductor portion 113 and the fifth conductor portion 115 are integrally formed in terms of their respective shapes, including the convex shape 113C and the convex shape 115C, by drawing or rolling a single plate-shaped conductor member, and then the third conductor portion 113 and the fifth conductor portion 115 are separated by cutting. The convex shape 115C is positioned inward (offset) from the convex shape 113C in the semiconductor module 100 by press working or the like. In the relationship between the fourth conductor portion 114 and the fifth conductor portion 115, thin-walled portions 115D and 114D are formed between the convex shape 114C and the convex shape 115C, with a thickness smaller than the thickness of the convex shape 114C and the convex shape 115C. In the relationship between the fourth conductor portion 114 and the third conductor portion 113, thin-walled portions 114D and 113D are formed between the convex shape 114C and the convex shape 113C, with a thickness smaller than the thickness of the convex shape 114C and the convex shape 113C.

[0020] The fourth conductor section 114, the third conductor section 113, and the fifth conductor section 115 are formed integrally and then separated by cutting. The convex shape 114C is in its state before separation, while the convex shapes 113C and 115C are formed from separately formed convex shapes, but are arranged on the same plane as the convex shape 113C.

[0021] As shown in Figure 6, the first conductor portion 111 has a plurality of base portions 111B which are electrically connected to a plurality of first switching elements 109A. The first conductor portion 111 has an auxiliary terminal 111C which is electrically connected to the upper arm control terminal 113A by solder or the like. The second conductor portion 112 has a plurality of base portions 112B which are electrically connected to a plurality of second switching elements 109B. The second conductor portion 112 has an auxiliary terminal 112C which is electrically connected to the lower arm control terminal 114B by solder or the like.

[0022] (Figure 7) Figure 7 is a cross-sectional view of a circuit body according to one embodiment of the present invention, in which a semiconductor module 100 is incorporated between heat dissipation members 130A and 130B. The heat dissipation members 130A and 130B dissipate heat generated in the semiconductor module 100 by placing the semiconductor module 100 between them, and the heat dissipation members 130A dissipate heat generated in the semiconductor module 100 from the upper arm circuit section having a switching element 109A and a first conductor section 111, and the lower arm circuit section having a switching element 109B and a second conductor section 112. The first switching element 109A is electrically joined to the first conductor section 111 by solder or the like. The first sheet member 101 is placed between the first conductor section 111 and the heat dissipation member 130A, and is composed of a first insulating layer 101A and a first conductor foil 101B. The first conductor foil 101B is, for example, copper foil, and one side is exposed from the first sheet member 101. The first insulating layer 101A is tightly bonded to the first conductor portion 111. The second switching element 109B is electrically bonded to the second conductor portion 112 by solder or the like. The second sheet member 102 is placed between the second conductor portion 112 and the heat dissipation member 130A and is composed of a second insulating layer 102A and a second conductor foil 102B. The second conductor foil 102B is, for example, copper foil, with one side exposed from the second sheet member 102. The second insulating layer 102A is tightly bonded to the second conductor portion 112.

[0023] The insulating thermal conductive layer 120A is a thermal conductive material (TMI) that transfers heat from the semiconductor module 100 to the heat dissipation member 130A, and is positioned between the first sheet member 101 and the heat dissipation member 130A, and between the second sheet member 102 and the heat dissipation member 130B. The insulating thermal conductive layer 120A is bonded to the heat dissipation member 130A. The first conductor foil 101B and the second conductor foil 102B each have exposed portions that are exposed from one side of the resin member 110, but the insulating thermal conductive layer 120A is formed to cover the exposed portions of the first conductor foil 101B and the second conductor foil 102B collectively, thereby improving insulation performance. The insulating thermal conductive layer 120A is a resin cured product that is fluid in its uncured state and loses its fluidity in its cured state, and is, for example, a member having a resistivity of 1000 Ω·cm or more in electrical resistance.

[0024] In this way, an insulating layer having a voltage division structure can be formed by the first insulating layer 101A, the first conductor foil 101B, and the insulating thermal conductive layer 120A. Similarly, an insulating layer having a voltage division structure can be formed by the second insulating layer 102A, the second conductor foil 102B, and the insulating thermal conductive layer 120A. As a result, the potential of the first conductor foil 101B and the second conductor foil 102B is fixed, thereby suppressing the occurrence of voltage concentration, and both the upper arm circuit and the lower arm circuit of the semiconductor module 100 can be made voltage-divided. Conventionally, when trying to ensure high voltage resistance with only an insulating layer, it was necessary to increase the thickness of the insulating layer, but this increased thermal resistance and made it impossible to ensure heat dissipation performance. However, according to the above embodiment of the present invention, insulating performance can be ensured without increasing the thickness of the insulating layer, and therefore heat dissipation performance is not impaired.

[0025] The first sheet member 101 has an outer peripheral portion 101C. The outer peripheral portion 101C is a part of the first sheet member 101 in which both ends are bent toward the resin member 110. The second sheet member 102 also has an outer peripheral portion 102C. The outer peripheral portion 102C is a part of the second sheet member 102 in which both ends are bent toward the resin member 110.

[0026] A portion of the first conductor foil 101B is provided on the outer periphery 101C as the first edge, and a portion of the second conductor foil 102B is provided on the outer periphery 102C as the second edge. The first edge of the outer periphery 101C and the second edge of the outer periphery 102C are embedded in the resin member 110 so that they face each other. In other words, the resin member 110 not only resin-seals the upper arm circuit section and the lower arm circuit section, but also resin-seals the first sheet member 101 and the second sheet member 102. This prevents the insulating layers of the first sheet member 101 and the second sheet member 102 from deteriorating due to moisture absorption, etc., and ensures insulation reliability. In Figure 7, the outer periphery 101C is shown with reference numerals on the edges that face each other in each sheet member, but the outer periphery without reference numerals is similarly embedded in the resin member 110.

[0027] The first switching element 109A is electrically connected to the third conductor portion 113, which is located on the side opposite to the first conductor portion 111, by solder or the like. The second switching element 109B is electrically connected to the fourth conductor portion 114, which is located on the side opposite to the second conductor portion 112, by solder or the like.

[0028] The above description concerns the configuration of the left side of the semiconductor module 100, where the first sheet member 101, the second sheet member 102, the insulating thermal conductive layer 120A, and the heat dissipation member 130A are arranged. However, the configuration of the right side of the semiconductor module 100, where the third sheet member 103, the fourth sheet member 104, the insulating thermal conductive layer 120B, and the heat dissipation member 130B are arranged, is similar and therefore the explanation is omitted.

[0029] With the above configuration, the semiconductor module 100 according to one embodiment of the present invention provides the following effects. Conventionally, in order to ensure high voltage resistance of a semiconductor module, it was necessary to increase the thickness of the insulating sheet, but this resulted in the problem of deterioration of thermal resistance. In this embodiment of the present invention, insulating sheet members, each with a conductive foil formed on one side, are separately arranged on the upper and lower arms, joined to the water channel by TIM, and the opposing portions of the insulating sheet members are embedded in a resin member. In this way, the potential between the conductive part of the semiconductor module 100 and the water channel is divided by the conductive foil, and a voltage division structure can be adopted on both the upper and lower arms to achieve high voltage resistance, thereby improving insulation performance and ensuring insulation reliability. Furthermore, with this structure, the insulating thermal conductive layer, which is formed with low thermal resistance and has fluidity, can absorb variations in thickness and variations in the flatness of the water channel, so that a reliable heat transfer path can be formed and stable heat dissipation can be ensured, contributing to improved productivity.

[0030] (First Modified Example) (Figures 8 and 9) Figure 8 is a modified example of Figure 7. Figure 9 is a perspective view of the semiconductor module 100 according to the first modified example, in which the heat dissipation members 130A and 130B are removed from Figure 8. The resin member 110 has resin member protrusions 110B that protrude toward the heat dissipation members 130A and 130B and abut against the heat dissipation members 130A and 130B. Specifically, multiple resin member protrusions 110B are formed integrally with the resin member 110 on the connection surface 110A of the resin member 110 for the first sheet member 101 and the second sheet member 102. In addition, multiple resin member protrusions 110B are formed on the connection surface 110A of the resin member 110 in areas where the first sheet member 101 and the second sheet member 102 are not present in the planar direction. Furthermore, the resin member protrusion 110B is formed to be larger than at least the thickness of the surface of the first sheet member 101 and the thickness of the surface of the second sheet member 102. The heat dissipation member 130A is arranged to abut against the resin member protrusion 110B.

[0031] This configuration allows for the regulation of the thickness of the insulating thermal conductive layer 120A after curing, ensuring the formation of an insulating thermal conductive layer 120A with appropriate insulation properties. Furthermore, by adjusting the thickness of the insulating thermal conductive layer 120A, the voltage division ratio can be adjusted. In particular, while the first conductor portion 111 is energized with DC current and the second conductor portion 112 is energized with AC current, higher insulation performance is required on the AC side than on the DC side. Therefore, the voltage division ratio on the AC side can be increased to adjust the insulation performance. Additionally, when viewed in a planar direction, the unjointed portions of each sheet member and heat dissipation member 130A can be eliminated. This allows for the absorption of variations between each sheet member while suppressing the occurrence of corona discharge, thus ensuring thermal conductivity and insulation. Although not shown in the figures, the same configuration applies to the connection surfaces 110A to the third sheet member 103 and the fourth sheet member 104. Furthermore, the resin member protrusion 110B may be formed on the connecting surface 110A by another elastic material such as rubber, thereby absorbing tolerance variations.

[0032] (Second Modified Example) (Figure 10) The resin member 110 has a resin outer peripheral portion 110C that surrounds the first sheet member 101 and the second sheet member 102 outside the region where the first sheet member 101 and the second sheet member 102 are arranged on the connection surface 110A. Because the resin outer peripheral portion 110C is formed on the connection surface 110A of the resin member 110, a housing portion 110D is formed on the inner peripheral side. In other words, the resin member 110 has a housing portion 110D that houses the insulating heat conductive layers 120A and 120B shown in Figures 8 and 9. The resin outer peripheral portion 110C is, for example, an elastic member, and is formed to surround the insulating heat conductive layer 120A in the planar direction, and is provided sandwiched between the resin member 110 and the heat dissipation member 130A, and between the resin member 110 and 130B in the cross section in the lamination direction. The height of the resin outer periphery 110C is formed to be greater than at least the thickness of the surface of the first sheet member 101 and the thickness of the surface of the second sheet member 102. The housing portion 110D is formed by the bottom of the connecting surface 110A and the wall surface of the resin outer periphery 110C.

[0033] This configuration prevents the possibility of the insulating thermal conductive layer 120A overflowing from its surroundings due to compressive force from the heat dissipation member 130A while it is fluid in an uncured state. Furthermore, this absorbs thickness variations between the U-phase, V-phase, and W-phase semiconductor modules 100, suppressing the occurrence of unbonded areas and achieving both insulation and thermal conductivity. The same applies to the opposite connection surface 110A of the resin member 110 where the third sheet member 103 and the fourth sheet member 104 are arranged.

[0034] (Third Modified Example) (Figure 11) The resin outer periphery 110C shown in Figure 11 is formed from the first sheet member 101 and the second sheet member 102 to form a housing portion 110D of a predetermined width in the planar direction. As a result, the volume of the housing portion 110D is reduced compared to the structure of the second modified example in Figure 10, and the required amount of the insulating thermal conductive layer 120A shown in Figures 8 and 9 is reduced, while further compressive force can be applied to the insulating thermal conductive layer 120A. The same applies to the opposite connection surface 110A of the resin member 110 on which the third sheet member 103 and the fourth sheet member 104 are arranged. Furthermore, the housing portion 110D only needs to be formed around at least the entire periphery of each sheet member, and its width is not limited.

[0035] (Fourth Modified Example) (Figure 12) When the thickness of the second conductor portion 112 is smaller than the thickness of the first conductor portion 111, in the insulating thermal conductive layer 120A, if the region of the insulating layer formed facing the first conductor portion 111 and the first sheet member 101 is called the first region 120C, and the region of the insulating layer formed facing the second conductor portion 112 and the second sheet member 102 is called the second region 120D, then the thickness of the second region 120D is larger than the thickness of the first region 120C. The insulating thermal conductive layer 120D is positioned on the side through which the AC current flows. As described above, although the insulating thermal conductive layer 120A is integrally formed, by dividing the region and changing the thickness according to the thickness of each conductor portion, the insulating layer composed of the second insulating layer 102A, the second conductor foil 102B, and the insulating thermal conductive layer 120A has higher insulating performance than the insulating layer composed of the first insulating layer 101A, the first conductor foil 101B, and the insulating thermal conductive layer 120A, thus efficiently ensuring insulating performance overall. The above configuration may also be applied to the insulating thermal conductive layer 120B formed on the third conductor portion 113 and the fourth conductor portion 114.

[0036] The embodiments and modifications of the present invention described above provide the following effects.

[0037] (1) The semiconductor device comprises an upper arm circuit section having a first switching element 109A constituting an upper arm circuit and a first conductor section 111 on which the first switching element 109A is arranged, a lower arm circuit section having a second switching element 109B constituting a lower arm circuit and a second conductor section 112 on which the second switching element 109B is arranged, a heat dissipation member 130A that dissipates heat generated from the upper arm circuit section and the lower arm circuit section, a first sheet member 101 disposed between the first conductor section 111 and the heat dissipation member 130A and composed of a first insulating layer 101A and a first conductor foil 101B, and a second insulating layer 102A disposed between the second conductor section 112 and the heat dissipation member 130A The semiconductor device comprises a second sheet member 102 composed of a first and second conductor foil 102B, a resin member 110 that seals the upper arm circuit section, the lower arm circuit section, the first sheet member 101, and the second sheet member 102, and an insulating thermal conductive layer 120A disposed between the first sheet member 101 and the heat dissipation member 130A, and between the second sheet member 102 and the heat dissipation member 130. The first conductor foil 101B and the second conductor foil 102B each have exposed portions exposed from one side of the resin member 110, the insulating thermal conductive layer 120A covers the exposed portions collectively, and the first conductor foil 101B and the second conductor foil 102B each have edges facing each other, with the edges embedded in the resin member 110. This configuration makes it possible to provide a semiconductor device that can handle high voltages and achieve high productivity and high heat dissipation.

[0038] (2) The insulating thermal conductive layer 120 is formed of a resin cured product that is fluid in the uncured state and loses its fluidity in the cured state. This ensures both insulating properties and thermal conductivity.

[0039] (3) The resin member 110 has a protrusion 110B that protrudes toward the heat dissipation member 130 and contacts the heat dissipation member 130. This allows the thickness of the insulating heat conductive layer 120 to be defined and appropriate insulation to be ensured.

[0040] (4) The resin member 110 has a housing portion 110D that houses the insulating thermal conductive layer 120. This prevents the uncured insulating thermal conductive layer 120 from flowing out of the housing portion 110D, thereby ensuring insulation and thermal conductivity.

[0041] (5) The structure includes an elastic member formed to surround the insulating thermal conductive layer 120 in the planar direction and sandwiched between the resin member 110 and the heat dissipation member 130 in the cross-section in the lamination direction. This ensures both insulating properties and thermal conductivity.

[0042] (6) The insulating thermal conductive layer 120 has a second region 120D facing the second sheet member 102 that is thicker than the first region 120C facing the first sheet member 101. This ensures insulating performance.

[0043] It should be noted that the present invention is not limited to the embodiments described above, and various modifications and combinations of other configurations can be made without departing from the spirit of the invention. Furthermore, the present invention is not limited to having all the configurations described in the embodiments described above, and may also include configurations in which some of those configurations are omitted.

[0044] 100 Semiconductor module 101 First sheet member 101A First insulating layer 101B First conductor foil 101C Outer periphery 102 Second sheet member 102A Second insulating layer 102B Second conductor foil 102C Outer periphery 103 Third sheet member 103A Third insulating layer 103B Third conductor foil 103C Outer periphery 104 Fourth sheet member 104A Fourth insulating layer 104B Fourth conductor foil 104C Outer periphery 108 Temperature sensor 109 Switching element 109A First switching element 109B Second switching element 110 Resin member 110A Connection surface 110B Protrusion 110C Resin outer periphery 110D Housing part 111 First conductor part 111A Connection part 111B Base part 111C Auxiliary terminal 112 Second conductor section 112A Connection section 112B Base section 112C Auxiliary terminal 113 Third conductor section 113A Upper arm control terminal 113B P main terminal 113C Convex shape 113D Thin-walled section 114 Fourth conductor section 114A AC main terminal 114B Lower arm control terminal 114C Convex shape 114D Thin-walled section 115 Fifth conductor section 115A N main terminal 115B Offset section 115C Convex shape 115D Thin-walled section 120 Insulating thermal conductive layer 120A Insulating thermal conductive layer (first conductor section, second conductor section side) 120B Insulating thermal conductive layer (third conductor section, fourth conductor section side) 120C First region 120D Second region 121 Insulating thermal conductive layer 130 Heat dissipation member 130A Heat dissipation member (first conductor section, second conductor section side) 130B Heat dissipation member (third conductor section, fourth conductor section side)

Claims

1. An upper arm circuit section having a first switching element constituting an upper arm circuit and a first conductor section on which the first switching element is arranged; a lower arm circuit section having a second switching element constituting a lower arm circuit and a second conductor section on which the second switching element is arranged; a heat dissipation member for dissipating heat generated from the upper arm circuit section and the lower arm circuit section; a first sheet member disposed between the first conductor section and the heat dissipation member and composed of a first insulating layer and a first conductor foil; a second sheet member disposed between the second conductor section and the heat dissipation member and composed of a second insulating layer and a second conductor foil; a resin member for sealing the upper arm circuit section, the lower arm circuit section, the first sheet member and the second sheet member; and an insulating thermal conductive layer disposed between the first sheet member and the heat dissipation member and between the second sheet member and the heat dissipation member, wherein the first conductor foil and the second conductor foil each have an exposed portion exposed from one side of the resin member. The insulating thermal conductive layer covers the exposed portion collectively, and the first conductor foil and the second conductor foil each have sides facing each other, and the sides are embedded in the resin member, in a semiconductor device.

2. The semiconductor device according to claim 1, wherein the insulating thermal conductive layer is formed of a resin cured product that has fluidity in an uncured state and loses its fluidity in a cured state.

3. The semiconductor device according to claim 2, wherein the resin member has a protrusion that protrudes toward the heat dissipation member and contacts the heat dissipation member.

4. The semiconductor device according to claim 2, wherein the resin member has a housing portion for housing the insulating thermal conductive layer.

5. The semiconductor device according to claim 2, further comprising an elastic member formed so as to surround the insulating thermal conductive layer in the planar direction and sandwiched between the resin member and the heat dissipation member in a cross-section in the stacking direction.

6. The semiconductor device according to claim 2, wherein the thickness of the second region of the insulating thermal conductive layer facing the second sheet member is greater than the thickness of the first region facing the first sheet member.

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