Image sensor utilizing specific wavelength-transmitting optical amplification nanostructure

Abstract

The present invention relates to an image sensor utilizing a specific wavelength-transmitting optical amplification nanostructure, wherein the resolution of the sensor can be increased by using amplification of incident light by the nanostructure and the ability to transmit a specific wavelength. The image sensor comprises: a nanostructure which has a shape and arrangement for collecting a specific wavelength region for distinguishing between signals and noise of incident light, has a lattice structure shape for amplifying specific signals, and amplifies collected signals of a specific wavelength, thereby transmitting light of a target wavelength to sensor unit cells; and sensor unit cells for receiving the signals of the specific wavelength collected and amplified by the nanostructure.

Description

Image sensor using specific wavelength-transmitting light-amplifying nanostructures

[0001] The present invention relates to an image sensor, and more specifically, to an image sensor utilizing a specific wavelength-transmitting light-amplifying nanostructure that can increase the resolution of the sensor by utilizing the amplification of incident light using a nanostructure and specific wavelength transmittance.

[0002] Generally, an image sensor is manufactured by forming a color filter on a substrate in which unit cells are formed and forming a microlens on top of the color filter, and this invention describes a method for increasing the precision regarding alignment and overlay during this process. (Korean Published Patent No. 10-2023-0141684)

[0003] For micro-lenses and color filters implemented in image sensors, high alignment and material properties (refractive index, transmittance, etc.) are required to detect light of specific wavelengths consistently and uniformly.

[0004] In particular, when forming microlenses, the refractive index of the material and the precision of the lens shape are important factors determining the amount of light of a specific wavelength incident on the unit cell, so high process precision is required.

[0005] In addition, color filters require various shielding structures and refractive index adjustments to accept specific wavelengths, and detection errors can occur due to the overlay phenomenon of adjacent color filters.

[0006] FIG. 1 is a schematic diagram showing the structure and operating principle of a conventional image sensor.

[0007] The incident light of various wavelengths (110) is first concentrated by a micro lens (120) and sent to the color filter (140) below.

[0008] At this time, light of various wavelengths (130) is uniformly directed toward the color filter (140) by simple light concentration, and the color filter (140) performs the function of separating specific wavelengths to transmit each target wavelength (150) to the unit cell (160) of the sensor below to perform photoelectric conversion. At this time, a method is selected in which a voltage amplifier is designed and applied to supplement the converted electrical signal.

[0009] In such conventional technology, various distortions and errors may occur due to alignment errors and the resolution performance of the filter when light is collected from a micro-lens and gathered into a color filter.

[0010] This invention describes an amplifier and switch structure for amplifying the voltage perceived in the unit cell of a CMOS sensor using an image sensor of a different technology. (Republic of Korea Registered Patent No. 10-1293057)

[0011] This technology relates to a CMOS image sensor and a ramp signal slope correction method according thereto. It relates to a CMOS image sensor including a comparator, an analog-to-digital converter, and a ramp signal slope correction circuit that increases linearity and is resistant to noise during analog-to-digital conversion, and a ramp signal slope correction method according thereto.

[0012] CMOS image sensors are gaining attention as the most essential technical component for the rapid development of the electronics field and the expansion of applications in AIoT devices, particularly AI systems through image detection. This is because, along with advancements in semiconductor processes, they offer higher integration density and superior power efficiency compared to conventional CCDs.

[0013] However, these CMOS image sensors must also include an electrical amplification circuit to receive light of a specific wavelength and convert it into voltage, and there are difficulties in implementing an image sensor with low power and high signal detection capabilities.

[0014] Another technology presents a method to effectively amplify minute signals detected in bioimaging systems by implementing a function that amplifies specific wavelengths in the infrared band through nanostructures. (Republic of Korea Published Patent No. 10-2019-0085477)

[0015] This technology was previously filed by the applicant of the present invention and is currently registered as a signal amplification technology related to bioimaging systems. Currently, development is underway to apply this amplification technology to various application fields, as it is capable of multi-wavelength amplification for multiple specific wavelengths rather than simply amplifying a single infrared wavelength.

[0016] Conventional methods for implementing nanostructures utilized plasmonic phenomena occurring at the interface between a specific dielectric (PMMA) and a metal layer. However, this approach had the disadvantage that the optimal amplification efficiency was determined by the angle of incidence of the incident light, which could lead to image distortion.

[0017] Therefore, the development of new technologies to improve the performance of image sensors (CCD and CMOS) is required.

[0018] The present invention aims to solve the problems of conventional image sensor technology by providing an image sensor utilizing a specific wavelength-transmitting light-amplifying nanostructure, which can increase the resolution of the sensor by amplifying incident light using a nanostructure and utilizing specific wavelength transmittance.

[0019] The purpose of the present invention is to provide an image sensor utilizing a specific wavelength-transmitting optical amplification nanostructure that enables the realization of a low-power, high-efficiency image sensor by not using a complex micro-lens focusing structure and a color filter, and by not using a voltage amplification structure generated by photoelectric conversion.

[0020] The purpose of the present invention is to provide an image sensor utilizing a specific wavelength-transmitting optical amplification nanostructure that is not affected by inter-wavelength interference and interference caused by overlays, which are problematic in conventional color filters, and enables the detection of various colors close to actual colors and high resolution while simplifying the structure through optical amplification via an amplification structure.

[0021] The purpose of the present invention is to provide an image sensor utilizing a specific wavelength-transmitting optical amplification nanostructure, which significantly improves the quantum efficiency (QE) of the image sensor by using a specific wavelength-transmitting optical amplification nanostructure, thereby enabling the generation of more photoelectrons and the maintenance of a lower noise level even under low light conditions.

[0022] The present invention aims to provide a specific wavelength-transmitting light-amplifying nanostructure application image sensor in which a plasmonic effect occurs in each structure due to the characteristics of a metastructure resulting from the joining of different dielectric constants by depositing silver, a metal with a negative dielectric constant, on a structure of a dielectric with a positive dielectric constant.

[0023] The present invention aims to provide an image sensor utilizing a specific wavelength-transmitting optical amplification nanostructure that can increase the resolution of the sensor by including grating structures having a specific wavelength region collection structure shape and arrangement for distinguishing noise and signals, and grating structures having a grating structure shape for specific signal amplification that amplifies the collected specific wavelength signal so that the electric field is concentrated in the central region.

[0024] Other objectives of the present invention are not limited to those mentioned above, and other unmentioned objectives will be clearly understood by those skilled in the art from the description below.

[0025] An image sensor utilizing a specific wavelength-transmitting light-amplifying nanostructure according to the present invention for achieving the above-mentioned purpose is characterized by comprising: a nanostructure having a shape and arrangement for collecting a specific wavelength region to distinguish noise and signals from incident light, a grid structure shape for amplifying a specific signal, amplifying a collected specific wavelength signal, and transmitting light of a target wavelength to a sensor unit cell; and sensor unit cells receiving the specific wavelength signal collected and amplified by the nanostructure.

[0026] Here, the nanostructure is characterized by including a first pattern region for collecting specific wavelengths, wherein nanostructures are repeatedly formed at regular intervals in a first direction centered on a central region, and a second pattern region having a lattice structure shape for amplifying specific wavelengths, wherein nanostructures are repeatedly formed at regular intervals in a second direction orthogonal to the first direction centered on a central region.

[0027] And the second pattern region of the nanostructure is characterized by amplifying a specific wavelength signal collected by the first pattern region so that the electric field is concentrated in the central region.

[0028] Furthermore, the nanostructures are characterized by the occurrence of plasmonic effects in each structure due to metastructural properties resulting from the joining of different dielectric constants by depositing a metal with a negative dielectric constant on a structure of a dielectric with a positive dielectric constant.

[0029] In addition, the nanostructures are characterized by creating nanogaps between specific structures to concentrate the electromagnetic field in a specific region.

[0030] And the nanostructures in the first pattern region are characterized by being repeatedly formed at regular intervals in the first direction centered on the central region where the amplified electric field is accumulated, and the nanostructures are of the same size.

[0031] And the nanostructures in the second pattern region are characterized by being repeatedly formed at regular intervals in a second direction orthogonal to the first direction centered on the central region, and the size of the nanostructures increases in axial length as they move outward from the central region.

[0032] And the effective wavelength for collection for a specific wavelength is,

[0033] It is defined as, where n1 and n2 are refractive indices, λ, determined by the dielectric properties of the nanostructure-forming material. p is the plasma wavelength, and in order to collect a specific wavelength It is characterized by setting it as such, and since the length of the axial structure changes according to λ, setting m as λ changes to find the maximum electric field.

[0034] And the characteristic of the lattice structure enhancing the plasmonic effect is,

[0035] It is defined as, where P represents the spacing between lattices, and θ R represents the angle of incidence of the incident light, k0 is the wavenumber of the incident light, n a represents the refractive index of a material, and ε m n is the permittivity of the material, and the spacing is used to resonate with a specific wavelength to enhance the effect of the lattice structure. It is characterized by setting it as.

[0036] The image sensor with a specific wavelength-transmitting light-amplifying nanostructure application according to the present invention, as described above, has the following effects.

[0037] First, the resolution of the sensor can be increased by utilizing the amplification of incident light and specific wavelength transmittance using nanostructures.

[0038] Second, by not using complex micro-lens focusing structures and color filters, and by not using a voltage amplification structure generated by photoelectric conversion, it is possible to realize a low-power, high-efficiency image sensor.

[0039] Third, it is not affected by inter-wavelength interference and interference caused by overlays, which are issues with conventional color filters, and enables the detection of various colors close to actual colors and high resolution while simplifying the structure through optical amplification via an amplification structure.

[0040] Fourth, by using specific wavelength-transmitting optical amplification nanostructures, the quantum efficiency (QE) of the image sensor is significantly improved, enabling the generation of more photoelectrons and the maintenance of lower noise levels even under low light conditions.

[0041] Fifth, by depositing silver, a metal with a negative permittivity, onto a structure of a dielectric with a positive permittivity, the nanostructures are made to have different permittivity characteristics, thereby causing plasmonic effects to occur in each structure.

[0042] Sixth, the resolution of the sensor can be increased by including grid structures having a specific wavelength range collection structure shape and arrangement for distinguishing noise and signals, and grid structures having a specific signal amplification shape that amplifies the collected specific wavelength signal so that the electric field is concentrated in the central region.

[0043] FIG. 1 is a schematic diagram showing the structure and operating principle of a conventional image sensor.

[0044] FIG. 2 is a configuration diagram of an image sensor using a specific wavelength-transmitting light-amplifying nanostructure according to the present invention.

[0045] FIG. 3 is a configuration diagram of an image sensor with a multi-color filter structure according to an embodiment of the present invention.

[0046] FIG. 4 is a planar structural diagram of a specific wavelength-transmitting light-amplifying nanostructure according to the present invention.

[0047] Figure 5 is a schematic diagram comparing the structural simplification and performance improvement of a specific wavelength-transmitting light-amplifying nanostructure according to the present invention with conventional image sensor technology.

[0048] FIG. 6 is a schematic diagram showing a patterned surface structure for a specific wavelength-transmitting light-amplifying nanostructure according to the present invention.

[0049] Hereinafter, a preferred embodiment of an image sensor utilizing a specific wavelength-transmitting optical amplification nanostructure according to the present invention will be described in detail as follows.

[0050] The features and advantages of the specific wavelength-transmitting light-amplifying nanostructure application image sensor according to the present invention will become apparent from the detailed description of each embodiment below.

[0051] Figure 2 is a schematic diagram of an image sensor with a specific wavelength-transmitting light-amplifying nanostructure application according to the present invention.

[0052] The terms used in this disclosure have been selected to be as widely used and general as possible, taking into account their functions within this disclosure; however, these terms may vary depending on the intent of those skilled in the art, case law, the emergence of new technologies, etc. Additionally, in specific cases, terms have been selected at the applicant's discretion, and in such cases, their meanings will be described in detail in the relevant description of the invention. Therefore, terms used in this disclosure should be defined not merely by their names, but based on their meanings and the overall content of this disclosure.

[0053] When a part of a specification is described as "including" a certain component, this means that, unless specifically stated otherwise, it does not exclude other components but may include additional components.

[0054] The image sensor utilizing a specific wavelength-transmitting light-amplifying nanostructure according to the present invention is designed to increase the resolution of the sensor by utilizing the amplification of incident light using a nanostructure and specific wavelength transmittance.

[0055] To this end, the present invention may include a configuration that enables the realization of a low-power, high-efficiency image sensor by not using a complex micro-lens focusing structure and a color filter, and by not using a voltage amplification structure generated by photoelectric conversion.

[0056] The present invention may include a configuration that is not affected by inter-wavelength interference and interference caused by overlay, which are problematic in conventional color filters, and enables the detection of various colors close to actual colors and high resolution while simplifying the structure through the effect of optical amplification via an amplification structure.

[0057] The present invention may include a configuration that utilizes a specific wavelength-transmitting optical amplification nanostructure to significantly improve the quantum efficiency (QE) of an image sensor, thereby enabling the generation of more photoelectrons and the maintenance of lower noise levels even under low light conditions.

[0058] The present invention may include a configuration in which a plasmonic effect occurs in each structure as a metastructure resulting from different dielectric constants being formed by depositing silver, a metal with a negative dielectric constant, on a structure of a dielectric with a positive dielectric constant.

[0059] The present invention may include a configuration that can increase the resolution of a sensor by including grid structures having a specific wavelength region collection structure shape and arrangement for distinguishing noise and signals, and grid structures having a grid structure shape for amplifying specific signals and amplifying the collected specific wavelength signals so that the electric field is concentrated in the central region.

[0060] As shown in FIG. 2, the specific wavelength transmission type light amplification nanostructure application image sensor according to the present invention includes a nanostructure (220) that has a shape and arrangement for collecting a specific wavelength region for distinguishing noise and signal of incident light (210), a grid structure shape for amplifying a specific signal, amplifies the collected specific wavelength signal, and transmits the target wavelength (230) to a sensor unit cell (240).

[0061] The specific wavelength-transmitting light-amplifying nanostructure application image sensor according to the present invention, having such a structure, uses a nanostructure (220) instead of a micro-lens array to collect incident light (210), thereby enabling light collection, amplification, and wavelength selectivity.

[0062] The nanostructure (220) is designed to fit the size of the sensor unit cell (240) and is designed to separate specific wavelengths according to the selected wavelength (RGB) of each sensor unit cell (240), so that additional use of a color filter is not required.

[0063] In addition, it is possible to implement an image sensor with higher efficiency and resolution by simultaneously focusing light and selecting wavelengths in the nanostructure (220) and amplifying specific wavelengths through a resonance function caused by a plasmonic phenomenon.

[0064] The specific wavelength-transmitting light-amplifying nanostructure application image sensor according to the present invention may be in the form of a specific wavelength-transmitting light-amplifying functional film having a stacked structure of a nanostructure based on a dielectric material such as a polymer and glass and a metal nanostructure.

[0065] Due to this structure, it has a light amplification function based on the surface plasmon phenomenon occurring at the interface between the dielectric and metal layers.

[0066] In addition, it has a wavelength selection function based on the selection of a specific wavelength by a specific repeating pattern of the nanostructure.

[0067] The feature of preventing inter-wavelength interference due to the specific wavelength selection function enables the enhancement of image sensor performance (resolution, sharpness, and accurate color reproduction).

[0068] Here, the metal layered material for generating the plasmon phenomenon may include, but is not limited to, various precious metals and metal materials such as gold, silver, and copper.

[0069] Specific wavelength-transmitting light-amplifying nanostructures for image sensors include structures that can be manufactured as films and stacked, or directly implemented on the surface in a stacked form during image sensor manufacturing.

[0070] In addition, it is also possible to implement an image sensor and an image sensor functional diode to which the specific wavelength-transmitting optical amplification nanostructure according to the present invention is applied.

[0071] Furthermore, the specific wavelength-transmitting optical amplification nanostructure application image sensor proposed by the present invention is suitable for accurate image detection and processing technology in technology fields such as autonomous vehicles and AIoT image detection.

[0072] In addition, it includes a technology for forming repeating patterns of specific wavelength-selective nanostructures according to each (RGB) wavelength-specific pixel implemented in the image sensor, and has a light-gathering structure that does not use an optical path or microlenses.

[0073] In addition, it has features for pattern implementation and generation applicable to semiconductor process technology and imprint or roll-to-roll imprint continuous production processes.

[0074] In addition, it has the characteristics of a nanostructure that implements a narrow-band wavelength selective filter structure that fundamentally blocks inter-wavelength interference, in contrast to the method of controlling the existing color filter function through material properties.

[0075] Based on the freedom and scalability of specific wavelength selection through such technology, it implements existing RGB and high-resolution image sensors and possesses characteristics of improved light efficiency and noise performance corresponding to ultra-high-resolution image sensors based on hundreds of millions of pixels, moving beyond the conventional concepts of primary color systems using Red (R), Green (G), and Blue (B) and complementary color systems using Yellow (Y), Cyan (Cy), and Magenta (Mg).

[0076] FIG. 3 is a configuration diagram of an image sensor with a multi-color filter structure according to one embodiment of the present invention.

[0077] Conventional color filters utilize color separation limited to RGB, but the nanostructure implemented through the present invention allows for limited selection of wavelengths, thereby enabling the implementation of filters with small linewidths.

[0078] Through this, color filters of various wavelength bands can be easily implemented and applied, thereby enabling the realization of resolution closer to actual shapes and colors.

[0079] The nanostructure (320) can achieve very high resolution by separating each pixel from a simple separation structure such as R / G / B to (R1, R2, R3,....Rn) / (G1, G2, G3,....Gn) / (B1, B2, B3...Bn). It is not affected by inter-wavelength interference and interference caused by overlay, which are problems in conventional color filters, and it is possible to implement an image sensor capable of detecting various colors close to actual colors and high resolution while simplifying the structure through the effect of light amplification through an amplification structure.

[0080] Figure 4 is a planar structural diagram of a specific wavelength-transmitting light-amplifying nanostructure according to the present invention.

[0081] As shown in FIG. 4, the specific wavelength transmission type optical amplification nanostructure according to the present invention has a specific wavelength region collection structure form and arrangement for distinguishing noise and signals, in which nanostructures are repeatedly formed at regular intervals in a first direction centered on a central region, and a first pattern region (410) for collecting specific wavelengths, and a second pattern region (420) for amplifying the specific wavelength signal collected by the first pattern region (410) so that the electric field is accumulated in the central region, having a grid structure form for specific wavelength amplification, in which nanostructures are repeatedly formed at regular intervals in a second direction orthogonal to the first direction centered on a central region.

[0082] Here, nanostructures cause plasmonic effects to occur in each structure due to the metastructure characteristics resulting from the joining of different dielectric constants by depositing silver, a metal with a negative dielectric constant, on a structure of a dielectric with a positive dielectric constant.

[0083] And a nano-gap is created between specific structures to design the electromagnetic field to be concentrated in a specific area. The nanostructures of the first pattern area (410) are repeatedly formed at regular intervals in the first direction centered on the central area where the amplified electric field is concentrated, and the nanostructures are of the same size.

[0084] The nanostructures of the second pattern region (420) are formed repeatedly at regular intervals in a second direction orthogonal to the first direction centered on the central region, and the size of the nanostructures increases in axial length as they move outward from the central region.

[0085] Figure 5 is a schematic diagram comparing the structural simplification and performance improvement of a specific wavelength-transmitting light-amplifying nanostructure according to the present invention with conventional image sensor technology.

[0086] The image sensor with a specific wavelength transmission optical amplification nanostructure application according to the present invention utilizes nano-antenna theory to collect signals for a specific wavelength and utilizes the density of signals for a specific wavelength in a specific part through the nano-plasmon principle and nano-gap effect to amplify a specific wavelength in a specific part, thereby enabling the amplification of only the desired signal while reducing noise.

[0087] By using a specific wavelength-transmitting optical amplification nanostructure according to the present invention, the photoelectronic conversion efficiency (Quantum Efficiency, QE) of existing image sensors can be significantly improved.

[0088] Photoelectric conversion efficiency is a ratio indicating how efficiently an image sensor converts light into an electrical signal. Quantum efficiency is a value indicating how efficiently an optoelectronic device detects light, expressed as a percentage (%). High QE helps generate more photoelectrons and maintain lower noise levels even under low light conditions.

[0089] The performance of an image sensor is determined by its photoelectric conversion efficiency. As shown in Fig. 5, when a nanostructure according to the present invention is applied, the use of micro-lenses and color filters used in conventional image sensors is eliminated, thereby having the advantage of significantly reducing various losses and noise.

[0090] In addition, it has the advantage of lowering manufacturing costs by reducing additional processes for process and alignment, and reducing component costs because there is no need to implement additional electrical amplification circuits through the optical amplification function.

[0091] FIG. 6 is a schematic diagram showing a patterned surface structure for a specific wavelength-transmitting light-amplifying nanostructure according to the present invention.

[0092] As shown in FIG. 6, it includes grid structures having a specific wavelength region collection structure shape and arrangement for distinguishing noise and signal, and grid structures having a grid structure shape for amplifying a specific signal and amplifying the collected specific wavelength signal so that the electric field is concentrated in the central region.

[0093] The specific wavelength transmission type optical amplification nanostructure pattern structure according to the present invention comprises unit pattern regions that are repeated in the entire pattern region for specific wavelength transmission type optical amplification, and each unit pattern region has a specific wavelength region collection structure form and arrangement for distinguishing noise and signal, and includes a first pattern region for collecting for a specific wavelength, and a second pattern region that amplifies the specific wavelength signal collected by the first pattern region so that the electric field is accumulated in the central region.

[0094] Here, the grid structures of the first and second pattern regions include a dielectric structure (620) having a first grid structure height on a dielectric substrate (610), and a metal structure formed on the dielectric structure (620) having a positive dielectric constant, such as silver, having a second grid structure height.

[0095] And the first pattern area grid structure and the second pattern area grid structure are designed so that the inter-grid spacing and axial structure length can enhance specific wavelength distinction and amplification characteristics.

[0096] The present invention considers the following matters for a design to enhance specific wavelength-transmitting optical amplification characteristics.

[0097] The theory of nano-antennas applies the dipole antenna theory to determine the antenna length capable of collecting specific wavelengths. Set it to collect specific wavelengths.

[0098] However, as the structure becomes smaller at the nanoscale, the effective wavelength changes with respect to the wavelength, and this effective wavelength is given by Equation 1.

[0099]

[0100] Here, n1 and n2 are refractive indices determined by the dielectric properties of the lattice structure-forming material, and λ p According to dipole antenna theory, in order to collect a specific 785nm light wavelength as a plasma wavelength Set it to.

[0101] By setting λ = 785nm, the length of the axial structure is set to 1177nm to maximize the gain value in the far-field by giving m an integer of 3, and the electric field normal value is highest at 2.11 × 108V / m in the 1177nm axial structure.

[0102] Since the length of the axial structure changes according to λ, the maximum electric field is found by setting m as λ changes.

[0103] The present invention includes a plasmonic metastructure and a nano-gap shape design configuration for specific signal amplification.

[0104] The pattern surface structure for distinguishing and amplifying specific near-infrared signals according to the present invention uses a plasmonic effect to amplify noise and other accurate signals.

[0105] In order to have a plasmonic effect, silver, a metal with a negative dielectric constant, is deposited on a PMMA structure with a positive dielectric constant, and a plasmonic effect occurs in each structure due to the characteristics of the metastructure resulting from joining different dielectric constants.

[0106] In addition, by creating nano-gaps between specific structures, the design allows the electromagnetic field to be concentrated in a specific region, and by optimizing the angle of incidence, the plasmonic effect can be maximized.

[0107] The present invention includes a grid structure design configuration for specific signal amplification.

[0108] Surface plasmonic refers to the phenomenon where, when a highly conductive metal material forms an interface with a dielectric material, electrons on the surface of the metal thin film vibrate collectively due to an applied electric field and travel along the interface with a constant period.

[0109] The present invention designs a lattice structure for each structure and optimizes the spacing to maximize the plasmonic effect and amplify the electromagnetic field strength in a specific region, thereby enabling the enhancement of the plasmonic effect in the near-infrared wavelength region, which is a specific wavelength range, in order to amplify the signal.

[0110] The characteristic of the lattice structure enhancing the plasmonic effect can be defined as in Equation 2.

[0111]

[0112] P represents the spacing between grid cells, and θ R represents the angle of incidence of the incident light, k0 is the wavenumber of the incident light, n a represents the refractive index of a material, and ε m represents the permittivity of the material.

[0113] In this way, to enhance the effect of the lattice structure and to resonate with a specific wavelength (@785nm), the spacing It is set to 392nm with m=1 in the structure so that the far-field gain can be maximized and increased.

[0114] Since the grating spacing varies with wavelength, fabrication is performed by varying the integer m depending on the wavelength of the light used, thereby enabling the resonance and integration of specific light.

[0115] The image sensor utilizing a specific wavelength-transmitting light-amplifying nanostructure according to the present invention, as described above, is designed to increase the resolution of the sensor by utilizing the amplification of incident light using a nanostructure and specific wavelength transmittance. By not using a complex micro-lens focusing structure or a color filter, and by not using a voltage amplification structure generated by photoelectric conversion, it enables the realization of a low-power, high-efficiency image sensor.

[0116] The present invention utilizes a specific wavelength-transmitting optical amplification nanostructure to significantly improve the quantum efficiency (QE) of an image sensor, thereby enabling the generation of more photoelectrons and the maintenance of lower noise levels even under low light conditions.

[0117] As explained above, it will be understood that the present invention is implemented in a modified form without departing from the essential characteristics of the invention.

[0118] Therefore, the described embodiments should be considered in an illustrative rather than a limiting sense, and the scope of the invention is defined by the claims rather than the foregoing description, and all variations within the equivalent scope should be interpreted as being included in the invention.

[0119] The present invention relates to an image sensor, and more specifically, to an image sensor utilizing a specific wavelength-transmitting light-amplifying nanostructure that can increase the resolution of the sensor by utilizing the amplification of incident light using a nanostructure and specific wavelength transmittance.

Claims

1. A nanostructure having a shape and arrangement for collecting a specific wavelength region to distinguish noise and signals from incident light, and a lattice structure shape for amplifying a specific signal, which amplifies the collected specific wavelength signal and transmits light of a target wavelength to a sensor unit cell; A specific wavelength transmission light amplification nanostructure application image sensor characterized by including sensor unit cells that receive a specific wavelength signal collected and amplified by the nanostructure.

2. In claim 1, the nanostructure is, Nanostructures are repeatedly formed in a first direction with respect to a central region at regular intervals to form a first pattern region for collecting specific wavelengths, and A specific wavelength transmission type light amplification nanostructure application image sensor characterized by including a second pattern region having a lattice structure form for specific wavelength amplification, wherein nanostructures are repeatedly formed at regular intervals in a second direction orthogonal to a first direction centered on a central region.

3. In claim 2, the second pattern region of the nanostructure is, A specific wavelength transmission type optical amplification nanostructure application image sensor characterized by amplifying a specific wavelength signal collected by a first pattern region so that the electric field is concentrated in the central region.

4. In claim 2, the nanostructures are formed by depositing a metal with a negative permittivity on a structure of a dielectric with a positive permittivity, A specific wavelength-transmitting optical amplification nanostructure application image sensor characterized by plasmonic effects occurring in each structure due to metastructure characteristics resulting from joining different dielectric constants.

5. An image sensor with a specific wavelength transmission type light amplification nanostructure application, wherein the nanostructures are characterized by creating nanogaps between specific structures to concentrate the electromagnetic field in a specific region.

6. In claim 2, the nanostructures of the first pattern region are, A specific wavelength-transmitting light-amplifying nanostructure application image sensor characterized by nanostructures being repeatedly formed at regular intervals in a first direction centered on a central region where an amplified electric field is accumulated, and the nanostructures having the same size.

7. In claim 2, the nanostructures of the second pattern region are, A specific wavelength-transmitting light-amplifying nanostructure application image sensor characterized by nanostructures being repeatedly formed at regular intervals in a second direction orthogonal to a first direction centered on a central region, and the size of the nanostructures increasing in axial length as they move outward from the central region.

8. In Paragraph 2, the effective wavelength for collection for a specific wavelength is, Defined as, Here, n1 and n2 are refractive indices determined by the dielectric properties of the nanostructure-forming material, λp is the plasma wavelength, and To collect specific wavelengths A specific wavelength transmission type optical amplification nanostructure application image sensor characterized by setting it as such, and finding the maximum electric field by setting m as λ changes since the length of the axial structure changes according to λ.

9. In claim 2, the characteristic of the lattice structure that enhances the plasmonic effect is, Defined as, P represents the spacing between grid cells, and θ R represents the angle of incidence of the incident light, k0 is the wavenumber of the incident light, n a represents the refractive index of a material, and ε m is the permittivity of the material, and To enhance the effect of the lattice structure, the spacing is set to resonate with a specific wavelength. Image sensor with a specific wavelength-transmitting light-amplifying nanostructure application characterized by setting to

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