Composition, laminate, and method for manufacturing semiconductor device

Abstract

The present invention addresses the problem of providing a composition capable of transferring fine and densely mounted semiconductor chips with high positional accuracy. The solution to the aforementioned problem is a composition containing a compound (a) and a compound (b), wherein the compound (a) accounts for more than 50 mass% and no more than 95 mass% relative to 100 mass % of the solid content of the composition.　The compound (a) has two or more groups bonded by reacting with a crosslinking group of the compound (b) per molecule, has maximum absorption in any wavelength within the range of 240 to 400 nm, and has a gram absorption coefficient of 40 to 4000 L / (g·cm) at the maximum absorption wavelength. The compound (b) does not correspond to the compound (a) and has two or more crosslinking groups per molecule, the crosslinking groups being groups selected from the group consisting of epoxy groups, oxetanyl groups, alkoxymethyl groups, methylol groups, and isocyanate groups.

Description

Composition, laminate, and method for manufacturing a semiconductor device

[0001] This invention relates to a composition, a laminate, and a method for manufacturing a semiconductor device. More specifically, it relates to a composition, a laminate, and a method for manufacturing a semiconductor device using the same, which are preferably used when mounting semiconductor chips by laser transfer.

[0002] Generally, components incorporated into semiconductor devices are transferred and mounted to circuit boards using a pick-and-place method with a flip-chip bonder or similar device. In recent years, semiconductor devices have become more high-performance and smaller, and consequently, the components incorporated into them have also become smaller and thinner, and the number of components mounted within a semiconductor device has increased. Recently, displays that use light-emitting diode (LED) chips, a type of semiconductor chip, arranged in each pixel have attracted attention due to their high brightness, low power consumption, and high image quality. The LEDs mounted in each pixel are called microLEDs, and tiny LEDs with sides measuring several hundred to tens of micrometers are used. In manufacturing these microLED displays, the above mounting method is too time-consuming, so new methods are being considered.

[0003] As a method for mounting a large number of small semiconductor chips, a laser transfer technique has been proposed. This technique involves preparing a laminate with an adhesive layer on a support substrate, mounting semiconductor chips on the side of the adhesive layer opposite to the support substrate, and then irradiating the laminate with a laser from the support substrate side. This selectively transfers and mounts the semiconductor chips to a counter substrate, such as a circuit board, located a certain distance below the laminate, so that they are spaced at the desired intervals. This technique has the advantage of being able to transfer semiconductor chips quickly and over a wide area by irradiating with a laser while rapidly moving the stages of the laminate and / or the counter substrate. "Transfer" refers to the process of moving a semiconductor chip from its original substrate to another substrate.

[0004] One example of a laminate used in laser transfer technology is a laminate that applies a thin adhesive layer and uses laser irradiation to ablate and eliminate the adhesive layer between the support substrate and the semiconductor chip, thereby removing all adhesive layer residue on the semiconductor chip while enabling the transfer of the semiconductor chip (for example, Patent Documents 1 and 2). Another example is a laminate in which laser irradiation ablates the hardened film located at the interface between the support substrate and the hardened film, and the resulting gas accumulates at the interface between the adhesive layer and the support substrate, forming a void (blister). The change in the shape of the adhesive layer causes the element to peel off and separate, thereby transferring the semiconductor chip (for example, Patent Document 3). Furthermore, there is a technology that applies an adhesive layer with controlled absorbance and adhesive strength to transfer a semiconductor chip without any adhesive layer residue (for example, Patent Document 4).

[0005] Japanese Patent Publication No. 2020-188037, International Publication No. 2022 / 201767, International Publication No. 2022 / 153745, International Publication No. 2022 / 210155

[0006] The technologies described in Patent Documents 1 and 2 require the removal of the entire adhesive layer by ablation using excessive laser light to avoid residue on the semiconductor chip surface of the adhesive layer, which has the problem of contaminating the opposing substrate due to the scattering of the adhesive layer (hereafter, the residue of the adhesive layer on the semiconductor chip surface may be referred to as adhesive residue, and the scattered residue of the adhesive layer may be referred to as debris).

[0007] While the technologies described in Patent Documents 3 and 4 can transfer semiconductor chips while suppressing the generation of residue and debris, they have the problem of not being able to transfer fine and densely mounted semiconductor chips, such as micro-LEDs, with good positional accuracy.

[0008] To solve the above problems, a preferred embodiment of the present invention includes the following: 1. A composition comprising compound (a) and compound (b), wherein compound (a) accounts for more than 50% by mass and 95% by mass or less, based on 100% by mass of the solid content of the composition.

[0009] (a) Compound: A compound having two or more groups in its molecule that react and bond with the crosslinking group of (b), having a maximum absorption in the wavelength range of 240 nm or more and 400 nm or less, and having a Gram extinction coefficient of 40 L / (g·cm) or more and 4000 L / (g·cm) or less at the wavelength of the maximum absorption. (b) Compound: A compound that does not fall under compound (a), has two or more crosslinking groups in its molecule, and the crosslinking groups are groups selected from the group consisting of epoxy groups, oxetanyl groups, alkoxymethyl groups, methylol groups, and isocyanate groups. 2. The maximum value A of the absorbance of the cured film obtained from the composition in the range of 240 nm or more and 400 nm or less. ｍａｘ２４０－４００ However, the maximum absorbance A in the range of over 400 nm and up to 780 nm is... ｍａｘ４００－７８０ The composition according to 1, wherein the amount is 20 times or more. 3. The composition according to 1 or 2, further comprising (c) compound in an amount of 1% by mass or more and 25% by mass or less based on 100% by mass of the solid content of the composition.

[0010] (c) Compound: A resin that does not fall under either compound (a) or compound (b). 4. The composition according to 3, wherein the weight-average molecular weight of compound (c) is 50,000 or more and 1,000,000 or less. 5. The composition according to any one of 1 to 4, wherein compound (b) has three or more crosslinking groups in its molecule. 6. The composition according to any one of 1 to 5, wherein the crosslinking group of compound (b) is an epoxy group. 7. The composition according to 6, wherein the group that reacts and bonds with the crosslinking group of compound (b) of compound (a) is a hydroxyl group. 8. The composition according to any one of 1 to 4, wherein the crosslinking group of compound (b) of compound (a) is an alkoxymethyl group. 9. The composition according to 8, wherein the group that reacts and bonds with the crosslinking group of compound (b) of compound (a) is a carbon atom to which an electrophilically replaceable hydrogen atom is bonded. 10. The composition according to 3, wherein compound (c) comprises one or more resins selected from the group consisting of acrylic resin, phenolic resin, and polyvinyl acetate. 11. 11. A laminate comprising a first substrate having laser transparency and a cured film obtained from any of the compositions described in 1 to 10. 12. The laminate according to 11, wherein a semiconductor chip is laminated on the surface of the cured film opposite to the surface in contact with the first substrate. 13. A method for manufacturing a semiconductor device comprising steps (A) and (B).

[0011] Step (A): A step of placing a second substrate opposite to the surface on which the semiconductor chips of the laminate described in 12 are stacked. Step (B): A step of irradiating the laminate with laser light from the side of the first substrate to transfer the semiconductor chips to the second substrate. 14. A method for manufacturing a semiconductor device as described in 13, further comprising performing step (C) before step (A).

[0012] Step (C): A step of exposing the surface of the laminate on which the semiconductor chips are stacked to an aqueous solution with a pH of 5 or less.

[0013] According to the composition of the present invention, semiconductor chips that are mounted finely and at high density can be transferred with high positional accuracy.

[0014] This figure illustrates a method for fabricating a second laminate. This figure illustrates a method for fabricating a second laminate using a temporary adhesive. This figure illustrates a method for fabricating a second laminate using laser lift-off. This figure illustrates another method for fabricating a second laminate using a semiconductor substrate. This figure illustrates the step of facing the semiconductor chip surface of the second laminate against the second substrate in a semiconductor device manufacturing method. This figure illustrates the step of transferring the semiconductor chip to the second substrate by irradiating it with laser light.

[0015] The present invention will be described in detail below, but the present invention is not limited to the following embodiments and can be modified and implemented as appropriate without departing from the spirit of the invention.

[0016] A composition according to one embodiment of the present invention is a composition comprising compound (a) and compound (b), wherein compound (a) accounts for more than 50% by mass and 95% by mass or less, based on 100% by mass of the solid content of the composition.

[0017] (a) Compound: A compound having two or more groups in its molecule that react and bond with the crosslinking group of (b), having a maximum absorption in the wavelength range of 240 nm or more and 400 nm or less, and having a Gram extinction coefficient of 40 L / (g·cm) or more and 4000 L / (g·cm) or less at the maximum absorption wavelength. (b) Compound: A compound that does not fall under compound (a), having two or more crosslinking groups in its molecule, wherein the crosslinking groups are groups selected from the group consisting of epoxy groups, oxetanyl groups, alkoxymethyl groups, methylol groups, and isocyanate groups. The composition according to one embodiment of the present invention will be described further below.

[0018] <(a) Compound> Compound (a) is an ultraviolet absorber having two or more groups in its molecule that react and bond with the crosslinking group of compound (b), and having a maximum absorption in the wavelength range of 240 nm or more and 400 nm or less, and having a Gram extinction coefficient of 40 L / (g·cm) or more and 4000 L / (g·cm) or less at the wavelength of maximum absorption. If the composition contains multiple ultraviolet absorbers having two or more groups in its molecule that react and bond with the crosslinking group of compound (b), the maximum absorption wavelength and Gram extinction coefficient shall be determined for the mixture of these compounds.

[0019] (a) Compound is the component responsible for absorbing laser light in the process in which the cured film obtained from the composition absorbs laser light and undergoes ablation. Ablation proceeds by decomposing compound (a) itself with the energy obtained from absorbing the laser light, or by transferring energy to compounds other than compound (a) and causing their decomposition. The wavelength of the laser light used is preferably in the ultraviolet region with sufficiently high energy to cause ablation. Specifically, it is preferable to use an excimer laser with wavelengths of 248 nm or 308 nm, or a YAG laser with wavelengths of 266 nm or 355 nm. If the Gram extinction coefficient of compound (a) at the maximum absorption wavelength in the range of 240 nm or more and 400 nm or less is 40 L / (g·cm) or more, the cured film will easily absorb the laser light and ablation will proceed. Furthermore, if (a) the Gram extinction coefficient at the maximum absorption wavelength in the range of 240 nm to 400 nm of the compound is 4000 L / (g·cm) or less, the laser light penetrates into the interior of the cured film and ablation proceeds, thereby suppressing the generation of residue. (a) The Gram extinction coefficient at the maximum absorption wavelength in the range of 240 nm to 400 nm of the compound is more preferably 400 L / (g·cm) or less.

[0020] Further, the (a) compound has two or more groups in the molecule that react with and bond to the crosslinking group of the (b) compound. By the reaction and bonding of the group that reacts with the crosslinking group of the (b) compound of the (a) compound and the (b) compound, a chain-like or network-like structure is formed to increase the molecular weight, so that the flow of the cured film can be prevented. If the fluidity of the cured film is low, after laminating the semiconductor chip on the cured film, the semiconductor chip can be held well. Therefore, the retention of the semiconductor chip over time is improved. On the other hand, when the (a) compound itself decomposes in the process of the cured film absorbing laser light and causing ablation, the above-mentioned chain-like or network-like structure collapses and the molecular weight decreases, so that even if debris is generated, it can be easily cleaned.

[0021] Examples of the group that reacts with and bonds to the crosslinking group of the (b) compound of the (a) compound include the following groups. When the crosslinking group of the (b) compound is an epoxy group or an oxetanyl group, the groups that react with and bond to the crosslinking group of the (b) compound include a hydroxyl group, a carboxyl group, and a thiol group.

[0022] When the crosslinking group of the (b) compound is an alkoxymethyl group or a methylol group, the group that reacts with and bonds to the crosslinking group of the (b) compound is a carbon atom to which an electrophilic substitution-capable hydrogen atom is bonded. The carbon atom to which an electrophilic substitution-capable hydrogen atom is bonded means, for example, a carbon atom at the ortho or para position of an electron-donating group bonded to an aromatic ring and to which a hydrogen atom is bonded. An electron-donating group is a group having a property of easily donating electrons compared to a hydrogen atom, and examples include an alkyl group, an alkoxy group, a hydroxyl group, an amino group, an alkylamino group, and a dialkylamino group. Taking the following formulas (1) and (2) as examples, the carbon atoms indicated by the arrows respectively correspond to the carbon atoms to which an electrophilic substitution-capable hydrogen atom is bonded.

[0023]

[0024] When the crosslinking group of the (b) compound is an isocyanate group, the groups that react with and bond to the crosslinking group of the (b) compound include a hydroxyl group and a thiol group. The hydroxyl group or the thiol group adds to the carbon of the isocyanate group to form a bond.

[0025] Moreover, it is preferable that the group which reacts and binds to the crosslinking group of the (b) compound in the (a) compound is a hydroxyl group. That is, it is preferable that the composition contains the (a) compound having two or more hydroxyl groups. Since these groups can react with an epoxy group, when the (a) compound having two or more hydroxyl groups and a compound having two or more epoxy groups in the molecule are used in combination, the crosslinking reaction easily proceeds by heating as described later.

[0026] Examples of the (a) compound having two or more hydroxyl groups include “Tinuvin” (registered trademark) (hereinafter omitted) 400, 405, 460, 477, 1130, “Adekastab” (registered trademark) (hereinafter omitted) LA-31RG, LA-31G, LA-F70, etc.

[0027] Moreover, it is preferable that the group which reacts and binds to the crosslinking group of the (b) compound in the (a) compound is a carbon atom to which an electrophilic substitution-capable hydrogen atom is bonded. That is, it is preferable that the composition contains the (a) compound having two or more carbon atoms to which an electrophilic substitution-capable hydrogen atom is bonded. Since a carbon atom to which an electrophilic substitution-capable hydrogen atom is bonded can react with an alkoxymethyl group, when the (a) compound having two or more carbon atoms to which an electrophilic substitution-capable hydrogen atom is bonded and a compound having two or more alkoxymethyl groups in the molecule are used in combination, the crosslinking reaction easily proceeds by heating as described later.

[0028] Examples of the compound having two or more carbon atoms to which an electrophilic substitution-capable hydrogen atom is bonded include “Tinuvin” (registered trademark) (hereinafter omitted) PS, 99-2, 326, 328, 384-2, 400, 405, 460, 477, 900, 928, 1130 (above, trade names, manufactured by BASF), “Adekastab” (registered trademark) (hereinafter omitted) LA-24, LA-29, LA-32, LA-36, LA-36RG, LA-46, LA-F70, 1413, etc.

[0029] Furthermore, the content of compound (a) is more than 50% by mass and 95% by mass or less, based on 100% by mass of the solid content of the composition. The content of compound (a) is preferably more than 60% by mass, more preferably 70% by mass or more, preferably 90% by mass or less, and more preferably 85% by mass or less, based on the solid content of the composition. If it is more than 50% by mass, the cured film will easily absorb the laser light and ablation will proceed. If it is 95% by mass or less, compound (b) can be included in the composition in a preferred amount, and the flow of the cured film can be reduced. If the composition contains multiple ultraviolet absorbers having two or more groups in the molecule that react and bond with the crosslinking group of compound (b), the total amount of these absorbers shall be considered as the content of compound (a).

[0030] <(b) Compound> Compound (b) is a compound that does not fall under compound (a) and has two or more crosslinking groups in its molecule, wherein the crosslinking groups are selected from the group consisting of epoxy groups, oxetanyl groups, alkoxymethyl groups, methylol groups, and isocyanate groups. As described above, compound (b) forms a chain-like or network structure with compound (a), preventing the cured film from flowing. This allows the semiconductor chip to be well held after being laminated onto the cured film.

[0031] Here, a compound that meets both the definition of a compound (a) and the definition of a compound (b), that is, a compound having two or more groups in its molecule that react and bond with the crosslinking group of a compound (b), having a maximum absorption in the wavelength range of 240 nm or more and 400 nm or less, and having a Gram extinction coefficient of 40 L / (g·cm) or more and 4000 L / (g·cm) or less at that maximum absorption wavelength, is classified as a compound (a) if the group that reacts and bonds with the crosslinking group of a compound (b) is selected from the group consisting of epoxy groups, oxetanyl groups, alkoxymethyl groups, methylol groups, and isocyanate groups.

[0032] When the crosslinking group is an isocyanate group, for example, it reacts with compound (a) having a hydroxyl group to form a urethane bond. As described later, after the semiconductor chip is laminated onto the cured film, there is a step of cleaning by exposing it to an acidic aqueous solution to remove debris originating from the crystal growth substrate. Since urethane bonds are easily hydrolyzed under acidic conditions, the cured film is damaged and the laminated semiconductor chip moves, resulting in poor retention of the semiconductor chip during cleaning. When the semiconductor chip moves, the positional accuracy of the subsequent transfer decreases. Therefore, it is more preferable that the crosslinking group is a group selected from the group consisting of epoxy groups, oxetanyl groups, alkoxymethyl groups, and methylol groups. Furthermore, from the viewpoint of the crosslinking reaction proceeding easily, it is even more preferable that it be an epoxy group or an alkoxymethyl group. Epoxy groups and alkoxymethyl groups have lower crosslinking temperatures than oxetanyl groups and methylol groups. For this reason, they can easily react with compound (a) by heating to form a chain-like or network-like structure.

[0033] (b) Specific examples of compounds include the following:

[0034] Examples of (b) compounds having an epoxy group include “EPICLON” (registered trademark) (hereinafter omitted): 830, 840, 850, 860, 1050, 1055, 3050, 4050, 7050, H-353, H-360, N-660, N-665, N-670, N-673, N-680, N-695, N-730A, N-740, N-770, N-775, N-865, N-885, N-890, HP-4032SS, HP-4700, HP-4710, HP-4750. , HP-4770, HP-5000, HP-6000, HP-9500, HP-7200, 7250 (all product names, manufactured by DIC Corporation), and "Alphon" (registered trademark) (hereinafter omitted) UG-4010, UG-4035, UG-4040, UG-4050, UG-4070 (all product names, manufactured by Toagosei Co., Ltd.), and "Ricaresin" (registered trademark) BEO-60E (hereinafter product name, manufactured by Shin Nippon Rika Co., Ltd.), and EP-4003S, EP-4000S (all product names, (Manufactured by ADEKA Corporation), “jER” (registered trademark) 871, 872, YX-4000, YX-4000H (all product names, manufactured by Mitsubishi Chemical Corporation), “Ceroxide” (registered trademark) 2021P (all product names, manufactured by Daicel Corporation), “Showfree” (registered trademark) (hereinafter omitted) PETG, CDMGB, BATG (all product names, manufactured by Resonac Corporation), and “Denacol” (registered trademark) (hereinafter omitted) EX-201, EX-211, EX-201, EX-2 Examples include EX-214, EX-252, EX-721, EX-920, EX-931, EX-810, EX-811, EX-850, EX-851, EX-830, EX-832, EX-841, EX-861, EX-991L (all product names, manufactured by Nagase ChemteX Corporation), "TEPIC" (registered trademark)-VL (all product names, manufactured by Nissan Chemical Corporation), and VG3101L, VG3101M80 (all product names, manufactured by Printec Co., Ltd.).

[0035] Examples of (b) compounds having an oxetanyl group include OXT-121, OXT-221, OX-SQ, OX-SQ-H, OXT-191, PNOX-1009, RSOX (all trade names, manufactured by Toagosei Co., Ltd.), "Ethanacol" (registered trademark) OXBP, and "Ethanacol" OXIPA (all trade names, manufactured by UBE Corporation).

[0036] Examples of (b) compounds having an alkoxymethyl group include DMOM-PC, DMOM-PTBP, DMOM-MBPC, TMOM-BP, TMOM-BPE, TMOM-BPA, TMOM-BPAF, TMOM-BPAP, HMOM-TPPHBA, HMOM-TPHAP (all trade names, manufactured by Honshu Chemical Industry Co., Ltd.) and "NIKALAC" (registered trademark) (hereinafter omitted) MX-280, MX-270, MX-279, MW-100LM, MW-390, MX-750LM (all trade names, manufactured by Sanwa Chemical Co., Ltd.).

[0037] Examples of (b) compounds having a methylol group include DML-PC, DML-PEP, DML-OC, DML-OEP, DML-34X, DML-PTBP, DML-PCHP, DML-OCHP, DML-PFP, DML-PSBP, DML-POP, DML-MBOC, DML-MBPC, DML-MTrisPC, DML-BisOC-Z, D Examples include MLBisOCHP-Z, DML-BPC, DML-BisOC-P, TriML-P, TriML-35XL, TML-HQ, TML-BP, TML-pp-BPF, TML-BPE, TML-BPA, TML-BPAF, TML-BPAP, HML-TPPHBA, and HML-TPHAP (all are product names, manufactured by Honshu Chemical Industry Co., Ltd.).

[0038] Examples of (b) compounds having an isocyanate group include naphthalene-1,5-diisocyanate, 1,4-phenylenediisocyanate, 4,4'-diisocyanato-3,3'-dimethylbiphenyl, m-xylylenediisocyanate, 1,3-bis(isocyanatomethyl)cyclohexane, bis(4-isocyanatophenyl)methane, toylene-2,4-diisocyanate, toylene-2,6-diisocyanate, and isophorone diisocyanate.

[0039] (b) Compound may contain two or more of these compounds. Furthermore, it is preferable that compound (b) has three or more crosslinking groups in its molecule. Having three or more crosslinking groups in its molecule makes it easier to exhibit the effect of preventing the cured film from flowing.

[0040] Examples of (b) compounds having three or more epoxy groups in the molecule include “EPICLON” (registered trademark) (hereinafter omitted) N-660, N-665, N-670, N-673, N-680, N-695, N-730A, N-740, N-770, N-775, N-865, N-885, N-890, HP-4700, HP-4710, HP-4750 (all trade names, manufactured by DIC Corporation) and “Alphon” (registered trademark) (hereinafter omitted) Examples include UG-4010, UG-4035, UG-4040, UG-4050, UG-4070 (all product names, manufactured by Toagosei Co., Ltd.), “Showfree” (registered trademark) (hereinafter omitted) PETG, BATG (all product names, manufactured by Resonac Co., Ltd.), “TEPIC” (registered trademark)-VL (all product names, manufactured by Nissan Chemical Corporation), and VG3101L, VG3101M80 (all product names, manufactured by Printec Co., Ltd.).

[0041] Examples of compound (b) having three or more oxetanyl groups in the molecule include OX-SQ, OX-SQ-H, OXT-191, and PNOX-1009 (all trade names, manufactured by Toagosei Co., Ltd.).

[0042] Examples of (b) compounds having three or more alkoxymethyl groups in the molecule include TMOM-BP, TMOM-BPE, TMOM-BPA, TMOM-BPAF, TMOM-BPAP, HML-TPPHBA, HML-TPHAP, HMOM-TPPHBA, HMOM-TPHAP (all trade names, manufactured by Honshu Chemical Industry Co., Ltd.) and "NIKALAC" (registered trademark) (hereinafter omitted) MX-280, MX-270, MX-279, MW-100LM, MW-390, MX-750LM (all trade names, manufactured by Sanwa Chemical Co., Ltd.).

[0043] Examples of (b) compounds having three or more methylol groups in the molecule include TriML-P, TriML-35XL, TML-HQ, TML-BP, TML-pp-BPF, TML-BPE, TML-BPA, TML-BPAF, and TML-BPAP (all trade names, manufactured by Honshu Chemical Industry Co., Ltd.).

[0044] Furthermore, compound (b) is preferably a resin having two or more crosslinking groups on its side chains or terminals, which can prevent the cured film from flowing before compound (a) and compound (b) react to form a chain-like or network structure. Examples of such compound (b) include “EPICLON” (registered trademark) (hereinafter omitted) N-660, N-665, N-670, N-673, N-680, N-695, N-730A, N-740, N-770, N-775, N-865, N-885, N-890 (all trade names, manufactured by DIC Corporation), and “Alphon” (registered trademark) (hereinafter omitted) UG-4010, UG-4035, UG-4040, UG-4050, UG-4070 (all trade names, manufactured by Toagosei Co., Ltd.).

[0045] (b) The compound preferably occupies a range of 5% by mass or more and less than 50% by mass, based on 100% by mass of the solid content of the composition. If it is 5% by mass or more, it can react with compound (a) to prevent the cured film from flowing. If it is 50% by mass or less, it prevents the crosslinking density of the cured film from becoming excessively high, and allows sufficient adhesion to be achieved for laminating semiconductor chips onto the cured film. Furthermore, preferably the mass ratio of compound (a) to compound (b) is in the range of compound (b) / compound (a) = 0.1 to 0.5. Within this range, it is easy to achieve both prevention of cured film flow and the development of adhesion.

[0046] <(c) Compound> The composition of the present invention preferably contains compound (c).

[0047] Compound (c) is a resin that does not fall under either compound (a) or compound (b). Including compound (c) further prevents the cured film from flowing. This further improves the retention of semiconductor chips over time. In addition, it is possible to prevent the cured film from flowing even before compound (a) and compound (b) react to form a chain-like or network-like structure. It is particularly preferable to include compound (c) when both compound (a) and compound (b) are not resins. The type and structure of compound (c) are not limited. From the viewpoint of easily designing the cured film to exhibit sufficient tackiness for laminating semiconductor chips, and from the viewpoint of suppressing the generation of residue and making any generated residue easily removable, it is preferable that compound (c) includes one or more resins selected from the group consisting of acrylic resin, phenolic resin, and polyvinyl acetate.

[0048] Acrylic resins are obtained by polymerizing the following radical polymerizable monomers, either individually or in combination. Radical polymerizable monomers include methyl (meth)acrylate, ethyl (meth)acrylate, n-butyl (meth)acrylate, isobutyl (meth)acrylate, t-butyl (meth)acrylate, isodecyl (meth)acrylate, lauryl (meth)acrylate, tridecyl (meth)acrylate, cetyl (meth)acrylate, stearyl (meth)acrylate, isoamyl (meth)acrylate, isostearyl (meth)acrylate, behenyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, other alkyl (meth)acrylates, cyclohexyl (meth)acrylate, t-butylcyclohexyl (meth)acrylate, tetrahydrofurfuryl (meth)acrylate, benzyl (meth)acrylate, phenoxyethyl (meth)acrylate, isobornyl (meth)acrylate, and trimethyl (meth)acrylate. Rollpropane tri(meth)acrylate, zinc mono(meth)acrylate, zinc di(meth)acrylate, dimethylaminoethyl(meth)acrylate, diethylaminoethyl(meth)acrylate, neopentyl glycol(meth)acrylate, trifluoroethyl(meth)acrylate, 2,2,3,3-tetrafluoropropyl(meth)acrylate, 2,2,3,3,4,4-hexafluorobutyl(meth)acrylate, perfluorooctyl(meth)acrylate, perfluorooctylethyl(meth)acrylate, ethylene glycol di(meth)acrylate, propylene glycol di(meth)acrylate, 1,4-butanediol di(meth)acrylate, 1,6-hexanediol di(meth)acrylate, 1,9-nonanediol di(meth)acrylate, 1,3-butanediol di(meth)acrylate, 1,10-Decanediol di(meth)acrylate, tetramethylene glycol di(meth)acrylate, methoxyethyl (meth)acrylate, butoxyethyl (meth)acrylate, ethoxydiethylene glycol (meth)acrylate, methoxypolyalkylene glycol mono(meth)acrylate, octoxypolyalkylene glycol mono(meth)acrylate, lauroxypolyalkylene glycol mono(meth)acrylate, stearoxypolyalkylene glycol mono(meth)acrylate, aryloxypolyalkylene glycol mono(meth)acrylate, nonylphenoxypolyalkylene glycol mono(meth)acrylate, acryloylmorpholine, hydroxyethyl acrylamide, N,N'-methylenebis(meth)acrylamide, N,N'-ethylenebis(meth)acrylamide, 1,2-di(meth)acrylamide ethylene glycol, di(meth)acryloyloxymethyltricyclodecane, N-(meth)acryloyl Xyethylmaleimide, N-(meth)acryloyloxyethylhexahydrophthalimide, N-(meth)acryloyloxyethylphthalimide, 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 3-hydroxypropyl (meth)acrylate, 2-hydroxybutyl (meth)acrylate, 3-hydroxybutyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, 1,2-cyclohexanediol mono(meth)acrylate, 1,3-cyclohexanediol mono(meth)acrylate, 1,4-cyclohexanediol mono(meth)acrylate, 1,2-cyclohexanedimethanol mono(meth)acrylate, 1,3-cyclohexanedimethanol mono(meth)acrylate, 1,4-cyclohexanedimethanol mono(meth)acrylate, 1,2-cyclohexanediethanol mono(meth)acrylate, 1,3-cyclohexanediethanol mono(meth)acrylate, 1,Examples include 4-cyclohexanediethanol mono(meth)acrylate, glycerin mono(meth)acrylate, glycerin di(meth)acrylate, trimethylolpropane mono(meth)acrylate, trimethylolpropane di(meth)acrylate, pentaerythritol mono(meth)acrylate, pentaerythritol di(meth)acrylate, pentaerythritol tri(meth)acrylate, and neopentyl glycol mono(meth)acrylate. Furthermore, n-vinyl-2-pyrrolidone, styrene derivatives, α-methylstyrene, etc., may be copolymerized.

[0049] Examples of phenolic resins include novolac-type phenolic resins obtained by condensing or co-condensing phenols such as phenol, cresol, resorcinol, catechol, bisphenol A, bisphenol F, phenylphenol, and aminophenol, and / or naphthols such as α-naphthol, β-naphthol, and dihydroxynaphthalene with compounds having an aldehyde group such as formaldehyde, benzaldehyde, and salicylaldehyde under an acidic catalyst; phenolic aralkyl resins synthesized from phenols and / or naphthols and dimethoxyp-xylene or bis(methoxymethyl)biphenyl; and biphenylene. Examples include aralkyl-type phenolic resins such as phenolic aralkyl resins and naphthol aralkyl resins; dicyclopentadiene-type phenolic resins such as dicyclopentadiene-type phenol novolac resins and dicyclopentadiene-type naphthol novolac resins synthesized by copolymerization of phenols and / or naphthols with dicyclopentadiene; triphenylmethane-type phenolic resins; terpene-modified phenolic resins; paraxylylene and / or metaxylylene-modified phenolic resins; melamine-modified phenolic resins; cyclopentadiene-modified phenolic resins; and phenolic resins obtained by copolymerizing two or more of these.

[0050] As polyvinyl acetate, a resin can be used that is polymerized by polymerization of vinyl acetate alone or in combination with a radically polymerizable monomer used in acrylic resins.

[0051] (c) The weight-average molecular weight of the compound is preferably 50,000 to 1,000,000. More preferably 100,000 or more, and even more preferably 500,000 or more. Furthermore, it is more preferably 800,000 or less, and even more preferably 600,000 or less. If it is 50,000 or more, the flow of the cured film can be further prevented, and by further improving film formation properties, the effect of suppressing unevenness on the film surface during curing can be achieved. (c) If the weight-average molecular weight of the compound is 1,000,000 or less, the generation of residue can be suppressed.

[0052] (c) From the viewpoint of reducing the flow of the cured film, the content of compound (c) is preferably 1% by mass or more, and more preferably 5% by mass or more, based on 100% by mass of the solid content of the composition. Furthermore, from the viewpoint of making it easier to wash away the residue generated during transfer, the content of compound (c) is preferably 25% by mass or less, based on 100% by mass of the solid content of the composition.

[0053] <Other Additives> The composition of the present invention may optionally contain surfactants to improve coating properties with a first substrate having laser transparency during film formation and to form a film of uniform thickness.

[0054] <Laminate> The laminate according to one embodiment of the present invention is a laminate in which a laser-transparent first substrate and a cured film obtained from the composition of the present invention are laminated. The laminate of this embodiment will be referred to as the first laminate from now on.

[0055] Furthermore, the laminate according to the second embodiment of the present invention is a laminate in which a semiconductor chip is laminated on the first laminate on the side of the cured film that is opposite to the side of the cured film of the first laminate that is in contact with the first substrate. The laminate according to this embodiment will be referred to as the second laminate from now on.

[0056] The first laminate and the second laminate according to the embodiment of the present invention may be collectively referred to simply as the laminate according to the embodiment of the present invention.

[0057] The following describes each component of the laminate according to the embodiment of the present invention. The first laser-transmitting substrate is a substrate whose absorbance at any wavelength between 240 and 400 nm is 0.1 or less. The absorbance being within a specific range at any wavelength between 240 and 400 nm means, for example, that when the absorbance is measured in the wavelength range of 240 to 400 nm, at least one absorbance value when the wavelength is an integer value is within the specific range.

[0058] Examples of substrates having such absorbance include inorganic substrates such as quartz, sapphire, alkali glass, alkali-free glass, and borosilicate glass. The thickness of the substrate can be selected within a range that does not impair the absorbance, and for example, 0.1 mm to 5.0 mm is preferred. That is, from the viewpoint of ease of handling the substrate, a substrate thickness of 0.3 mm or more is more preferred. On the other hand, from the viewpoint of availability and versatility, a substrate thickness of 2.0 mm or less is more preferred.

[0059] For the first substrate having laser transparency, organic substrates such as PET, aramid, polyester, polypropylene, and cycloolefin can also be used. When using an organic substrate, the thickness of the substrate can be selected within a range that does not impair the absorbance, and for example, 0.05 mm to 3.0 mm is preferred. From the viewpoint of ease of handling the substrate, a substrate thickness of 0.1 mm or more is more preferred. On the other hand, a substrate thickness of 1.0 mm or less is more preferred because it can suppress light scattering during laser irradiation.

[0060] Since the first substrate is laser-transparent, when laser-transferring a semiconductor chip, the laser irradiated from the side of the first substrate of the laminate passes through the first substrate and reaches the cured film. In the case of a second laminate configuration, the reaching laser is absorbed by the cured film, and the semiconductor chip is transferred by method A or method B described below.

[0061] Method A: Gas is generated when almost the entire hardened film in the area irradiated by the laser is decomposed. The generated gas transfers the semiconductor chips stacked on the hardened film.

[0062] Method B: When the laser is irradiated, the surface of the cured film in contact with the first substrate and its vicinity decompose, generating gas at the interface between the first substrate and the cured film. The pressure of the generated gas causes the cured film to expand and deform, transferring the semiconductor chips stacked on top of the cured film.

[0063] Hereinafter, unless otherwise specified, embodiments of the present invention will be further described using the case in which the semiconductor chip is transferred by method A as an example.

[0064] <Cured Film> The cured film is a film in which at least a portion of the composition of the present invention has been cured. In the present invention, the cured state refers to, for example, a state in which compound (a) and compound (b) have reacted.

[0065] Furthermore, to facilitate the adhesion of semiconductor chips to the cured film, the cured film is prepared at 25°C and 1.0 × 10 －２ The loss loss tangent measured by dynamic viscoelasticity measurement at Hz is preferably 0.40 or higher, more preferably 0.45 or higher, and even more preferably 0.50 or higher.

[0066] In the embodiment of the present invention, the laminate preferably has a cured film thickness of 0.7 μm or more and 30 μm or less. A film thickness of 0.7 μm or more reduces the transfer of heat generated when laser light is irradiated to the semiconductor chip, thereby suppressing damage to the semiconductor chip. Furthermore, it prevents the cured film from rupturing and becoming debris that contaminates the opposing substrate.

[0067] Furthermore, if the thickness of the cured film is 30 μm or less, the deformation caused by ablation of the cured film by laser light irradiation from the laser-transmitting first substrate side is efficiently transmitted to the interface of the semiconductor chip, and as a result the semiconductor chip can be transferred. The thickness of the cured film is more preferably 20 μm or less, which allows for better positional accuracy when transferring the semiconductor chip to the opposing substrate. Even more preferably it is 7 μm or less, particularly preferably 3 μm or less, and most preferably 2 μm or less.

[0068] From the viewpoint of preventing the laser light from passing through the cured film and damaging the semiconductor chip, the absorbance of the cured film at a film thickness of 1.0 μm conversion at any wavelength between 240 and 400 nm is preferably 0.4 or more, and more preferably 0.6 or more. Further, since the laser light also penetrates into the cured film and ablation progresses, from the viewpoint of suppressing the generation of residues, the absorbance of the cured film at a film thickness of 1.0 μm conversion at any wavelength between 240 and 400 nm is preferably 5.0 or less, and more preferably 4.0 or less.

[0069] Further, the maximum value A of the absorbance of the cured film in the range of 240 nm or more and 400 nm or less ｍａｘ２４０－４００ is preferably 20 times or more the maximum value A of the absorbance in the range of more than 400 nm and 780 nm or less. A ｍａｘ４００－７８０ By having A ｍａｘ２４０－４００ / A ｍａｘ４００－７８０ of 20 or more, it has a preferable ultraviolet laser absorption ability and can prevent deterioration by visible light. The ratio of the absorbance shall be determined by the method described in the examples. From the same viewpoint as above, A ｍａｘ２４０－４００ / A ｍａｘ４００－７８０ is more preferably 30 or more. Further, A ｍａｘ２４０－４００ / A ｍａｘ４００－７８０ is preferably 300 or less.

[0070] The cured film preferably has an adhesive strength of 0.02 N / cm or more and 0.3 N / cm or less on the surface of the cured film on the side opposite to the surface in contact with the first substrate. The adhesive strength mentioned here indicates the value obtained from a 90° peel test of the surface of the cured film and a "Kapton" (registered trademark) film. The specific measurement method is to cut a "Kapton" (registered trademark) film into 1 cm × 9 cm on the surface of the cured film and press it at 0.6 MPa and 35 °C with a vacuum laminator, and then perform a peeling test on the pressed "Kapton" (registered trademark) tape at a constant speed of 2 mm / second in a direction perpendicular to the cured film with a tensile tester.

[0071] A bonding strength of 0.02 N / cm or more allows for stable retention of the semiconductor chip when it is laminated onto the cured film. Furthermore, a bonding strength of 0.3 N / cm or less allows for the transfer of the semiconductor chip at a low laser light energy density during the transfer process. More preferably, the bonding strength is 0.2 N / cm or less. This range suppresses adhesive residue on the semiconductor chip when the semiconductor chip is transferred by irradiating it with a laser from the laser-transparent first substrate side.

[0072] <Semiconductor Chip> Next, the semiconductor chip in the second stacked structure according to an embodiment of the present invention will be described.

[0073] In this invention, semiconductor chips refer to individual components made by encapsulating semiconductors such as GaN, AlN, InN, InP, GaAs, Si, and SiC. For example, they may have one or more elements such as transistors, diodes, or light-emitting diodes, and have an appearance close to that of a rectangular parallelepiped. Specifically, examples include micro-LED chips, mini-LED chips, power transistor chips, logic chips, and memory chips. These semiconductor chips may also include those in which electrode materials, wiring layers, etc., are stacked.

[0074] The semiconductor chip preferably has dimensions of 5 μm or more and 5.0 mm or less on each side (length and width). More preferably, it is 3.0 mm or less. This allows the laser to be focused and the spot diameter to be reduced, enabling transfer with high positional accuracy. Furthermore, the thickness of the semiconductor chip is preferably 0.1 μm or more. A thickness of 0.1 μm or more helps to avoid damage during the transfer process.

[0075] The number of semiconductor chips mounted on the second stacked structure according to an embodiment of the present invention is 5 chips / cm² per unit area. ２ The above is preferable, and more preferably 50 pieces / cm ２ That concludes the explanation. By increasing the number of semiconductor chips above the lower limit mentioned above, the throughput improvement effect achieved by utilizing laser transfer becomes greater. Furthermore, since the laser can be precisely irradiated onto each individual semiconductor chip, the number of semiconductor chips mounted on the second stack can reach 500,000 chips / cm².２ The following is preferable, and more preferably 100,000 pieces / cm² ２ The following applies:

[0076] <Method for producing the composition> As an example, the composition can be obtained as a varnish by dissolving compound (a), compound (b), and optionally compound (c) and other additives in a solvent. There are no particular restrictions on the solvent, and known solvents can be used. For example, N-methyl-2-pyrrolidone, N,N-dimethylformamide, N,N-dimethylacetamide, N,N-dimethylisobutylamide, 3-methoxy-N,N-dimethylpropionamide, 3-butoxy-N,N-dimethylpropionamide, γ-butyrolactone, ethyl lactate, 1,3-dimethyl-2-imidazolidinone, N,N'-dimethylpropylene urea, 1,1,3,3-tetramethylurea, dimethyl sulfoxide, sulfolane, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, diethylene glycol ethyl methyl ether, diethylene glycol dimethyl ether, cyclohexanone, cyclopentanone, water, or reaction solvents described in International Publication No. 2017 / 099183 can be used alone or in combination of two or more.

[0077] Methods for dissolving the composition (varnish) include stirring and heating, and stirring is usually performed at room temperature to 80°C. Furthermore, the order in which each compound and additive is dissolved is not particularly limited; for example, compounds with lower solubility can be dissolved sequentially. The varnish obtained by these manufacturing methods is preferably filtered using a filtration filter to remove foreign matter such as debris.

[0078] <Method for manufacturing a laminate> Next, a method for manufacturing a laminate according to an embodiment of the present invention will be described.

[0079] The first laminate is obtained by forming a cured film on a first substrate that is laser-transparent. An example of a method for producing the first laminate is described below. The above-mentioned varnish is applied to the first substrate that is laser-transparent, and a cured film is produced by heating and curing it. When producing the cured film by coating, any coating method can be selected, including methods such as rotary coating using a spinner, spray coating, roll coating, and slit die coating. The cured film after coating is preferably dried for 1 minute to several tens of minutes at a temperature in the range of 50°C to 150°C using a hot plate, drying oven, infrared rays, etc.

[0080] Furthermore, if necessary, the film is then heat-cured at a temperature of 100°C to 500°C for several minutes to several hours. During these drying or heat-curing processes, at least some of the compounds (a) and (b) in the film react and bond together. The formation of this bond reduces the fluidity of the film, allowing the semiconductor chip to be held well after being laminated onto the cured film, thus improving the retention of the semiconductor chip over time. The reaction between compounds (a) and (b) in the film may be completed during this process, or the reaction may be allowed to proceed further after the semiconductor chip has been laminated onto the cured film without completing the reaction.

[0081] The latter method allows for favorable control of viscoelasticity by altering the state of the film before and after stacking semiconductor chips. In this case, using compound (b) having an epoxy group as a crosslinking group is preferable because it does not generate byproducts in the reaction with compound (a) and the change in film thickness is small. The film thickness of the cured film is preferably 0.7 μm or more and 30 μm or less. The film thickness can be measured using a scanning electron microscope, optical film thickness gauge, step gauge, etc.

[0082] Next, an example of a method for creating a second stack by stacking semiconductor chips will be explained using diagrams.

[0083] Figures 1 to 3 illustrate a method for fabricating the second laminate (120). When fabricating the second laminate using the method shown in Figure 1, semiconductor chips (14) are directly placed on the cured film (12) of the first laminate (110), which has a first substrate (11) on which a cured film (12) is laminated, and then laminated by pressing them together with a bonding device (41) such as a vacuum laminator, wafer bonder, or press.

[0084] Alternatively, as shown in Figure 2, a semiconductor chip temporary bonding substrate (130) is prepared on another support (15) with a semiconductor chip (14) temporarily bonded to it via a temporary adhesive (16). The semiconductor chip (14) on the temporary adhesive (16) and the cured film (12) surface of the first laminate (110) are then placed on top of each other and pressed together using the aforementioned bonding device (41).

[0085] Subsequently, the temporary adhesive (16) and support (15) can be removed from the semiconductor chip (14) to produce a second laminate (120). Furthermore, as shown in Figure 3, a semiconductor chip-attached substrate (140), on which the semiconductor chip (14) has been directly fabricated onto a crystal growth substrate (17) such as sapphire, is superimposed with the semiconductor chip (14) surface and the cured film (12) surface facing each other, and then pressed together using the above-described apparatus (41).

[0086] Subsequently, the second laminate (120) can be fabricated by irradiating the crystal growth substrate (17) with laser light (31) and laser lifting the semiconductor chip (14) from the crystal growth substrate (17) to the first laminate (110).

[0087] The pressure applied when stacking semiconductor chips can be selected to an optimal value depending on the adhesive strength of the cured film, for example, within the range of 0.05 MPa to 5.0 MPa. A pressure of 2.0 MPa or less is more preferable to avoid damage to the semiconductor chips and to suppress embedding into the cured film. Furthermore, when stacking semiconductor chips, it is possible to apply pressure while heating as needed. Heating increases the flexibility of the cured film, allowing the semiconductor chips to be bonded at a lower pressure.

[0088] The semiconductor chip in the second laminate needs to remain in the same position until it is transferred by the laser. If the semiconductor chip moves, the center position of the semiconductor chip and the center position of the laser irradiation spot will shift, reducing the positional accuracy after transfer. The cured film of the present invention holds the semiconductor chip well while the second laminate is stored, and therefore the positional accuracy when the semiconductor chip is transferred after storage is also good.

[0089] When a semiconductor chip (14) is laser-lifted from the crystal growth substrate (17) to the first laminate (110), debris originating from the crystal growth substrate is generated, and the second laminate is contaminated by this debris. To remove this debris, there is a step of cleaning the second laminate by exposing it to an acidic aqueous solution (pH 5 or less). For this reason, it is preferable that the cured film is not damaged by this solution and that it has high retention of the semiconductor chip during cleaning. If it is damaged, it will not be able to hold the semiconductor chip laminated on the cured film, and it may move or peel off.

[0090] Furthermore, by pre-marking the laminate with alignment marks, it becomes easier to adjust the transfer position in subsequent operations.

[0091] Furthermore, another method for fabricating the second laminate will be explained with reference to Figure 4. A semiconductor substrate (18) in its pre-fragmentation state is bonded to another support (15) via a temporary adhesive (16). Then, varnish is applied to this pre-fragmentation semiconductor substrate (18) and heated to form a cured film (12). In this state, the laser-transparent first substrate and the support with the cured film are bonded facing each other. The support (15) and the temporary adhesive (16) adjacent to the support (15) are peeled and removed, and then the semiconductor substrate (18) is fragmented to form semiconductor chips (14), thereby fabricating the second laminate (120).

[0092] <Semiconductor Devices> A semiconductor device is an assembly of multiple semiconductor chips that are electrically connected. For example, a microLED display is a semiconductor device in which multiple microLED chips, which are semiconductor chips, are arranged on a drive substrate, and it displays images by individually controlling and lighting up the microLED chips. Also, semiconductor packages called 2.5D or 3D are semiconductor devices that incorporate multiple logic chips and memory chips, which are semiconductor chips, and are used in advanced technologies such as generation AI and advanced driver-assistance systems. In this way, by incorporating multiple semiconductor chips, semiconductor devices can realize a wider range of functions compared to semiconductor chips alone.

[0093] <Manufacturing Method for Semiconductor Devices> Next, we will explain the manufacturing method for semiconductor devices.

[0094] A method for manufacturing a semiconductor device according to an embodiment of the present invention is a method for manufacturing a semiconductor device using the second laminate described above, and includes the following steps (A) and (B).

[0095] Step (A): A step of placing the second substrate opposite the surface on which the semiconductor chips are stacked on the second laminate.

[0096] Step (B) A step of transferring a semiconductor chip to the second substrate by irradiating the second laminate with laser light from the side of the first substrate.

[0097] Furthermore, as mentioned above, if the second laminate is contaminated with debris originating from the crystal growth substrate, it is preferable to remove this debris by performing step (C) below before step (A).

[0098] Step (C): A step of exposing the surface on which the semiconductor chips of the second stacked structure are stacked to an aqueous solution with a pH of 5 or less.

[0099] The process of facing the semiconductor chip surface of the second laminate with the second substrate will be explained with reference to the drawings. Figure 5 illustrates a method for manufacturing a semiconductor device.

[0100] The semiconductor chip surface refers to the surface of the second stacked body (120) that has semiconductor chips (14) on it (the surface on which semiconductor chips are stacked).

[0101] For the second laminate (120) and second substrate (21) fabricated by the method described above, the surface of the second laminate (120) holding the semiconductor chip (14) is placed facing the second substrate (21), and the substrate is fixed so that the second laminate (120) and the second substrate (21) are parallel. To prevent displacement of the semiconductor chip (14) due to its own weight during transfer, the second laminate (120) and second substrate (21) are positioned with the second laminate (120) on top. The second laminate and the second substrate are placed with a certain distance between them. The distance between the semiconductor chip surface and the second substrate (hereinafter referred to as clearance) can be selected depending on the size and thickness of the semiconductor chip, and can be selected in the range of several μm to several hundred μm, for example. When the semiconductor chip is transferred, if the semiconductor chip pops out in a direction perpendicular to the surface of the second laminate that holds the semiconductor chip, the possibility of displacement of the position on the second substrate where the semiconductor chip lands is small. When a semiconductor chip is ejected at an angle, its landing position on the second substrate is more likely to be misaligned, and this misalignment increases with wider clearance.

[0102] Any substrate can be used for the second substrate, such as a glass substrate, a resin substrate, a metal substrate, or a circuit board with pre-formed wiring. It may also have an adhesive layer to hold the semiconductor chip after transfer. The adhesive layer can be made from an adhesive material such as polysiloxane resin, acrylic resin, polyester resin, an anisotropic conductive film, conductive silver paste, or a cured film similar to the cured film in the laminate according to the embodiment of the present invention. The thickness of the adhesive layer is selected, for example, in the range of 0.5 μm to 100 μm, depending on the size of the semiconductor chip and the distance between the semiconductor chip and the second substrate.

[0103] Additionally, alignment marks may be present on the second substrate side for transfer positioning purposes.

[0104] Next, the process of transferring a semiconductor chip to the second substrate by irradiating it with laser light from the laser-transmitting side of the second laminate will be explained with reference to the drawings. An example of the transfer process is shown in Figure 6(a).

[0105] In the second laminate (120) and second substrate (21) arranged in the manner described above, laser light (31) is irradiated onto the semiconductor chip from the laser-transparent first substrate (11) side of the second laminate (120) through the laser-transparent first substrate (11). Examples of laser light types include solid-state lasers such as YAG lasers, YVO4 lasers, fiber lasers, and semiconductor lasers, and gas lasers such as carbon dioxide lasers, excimer lasers, and argon lasers, which can be selected depending on the wavelength used. The beam shape of the irradiated laser light is not limited, and the laser spot size may be smaller than the size of the semiconductor chip. However, the size should be such that the laser light does not strike semiconductor chips adjacent to the semiconductor chip being transferred.

[0106] Furthermore, if the spot size of the laser beam is large enough to hit adjacent semiconductor chips, it is also possible to irradiate the laser beam (31) through a photomask (51), as shown in Figure 6(b). The laser beam can be selected at any energy density. From the viewpoint of the stability of the laser beam's energy density, the energy density of the laser beam is set to 1 mJ / cm². ２ The above is preferable, and from the viewpoint of preventing damage to the semiconductor chip and shortening the processing time, 1000 mJ / cm² is preferred. ２ The following is preferable. More preferably, the energy density of the laser light is 10 mJ / cm². ２ Above, 500mJ / cm ２ The following applies:

[0107] By using the second laminate according to the embodiment of the present invention, transfer is possible even at low energy, and furthermore, even when the energy density of the laser light is changed, the impact on positional accuracy, debris, and adhesive residue can be minimized. The energy density of the irradiated laser light may have output unevenness, and in order to minimize the impact of output unevenness on transferability, it is preferable that the second laminate has a similar level of transferability regardless of the energy density of the laser light. The range of laser light energy densities that have a similar level of transferability is 30 mJ / cm². ２ A margin greater than or equal to the above is preferable, and from a practical standpoint, 50 mJ / cm² is preferable.２ The above are particularly preferable.

[0108] Furthermore, it is possible to heat the second substrate when transferring the semiconductor chip. In particular, if an adhesive layer is formed on the second substrate, heating the second substrate is preferable because it improves the retention of the transferred semiconductor chip. When heating the second substrate, it is preferable that the heating temperature be 120°C or lower in order to prevent warping of the second substrate due to heat and to enable transfer with good positional accuracy.

[0109] Furthermore, the relative positions of the second stack and the second substrate may be changed while keeping them parallel. Changing the relative positions of the second stack and the second substrate allows the semiconductor chip to be transferred to any position on the second substrate. In this case, it is necessary to move at least one of the second stack or the second substrate, and it is preferable to widen the clearance to reduce the risk of collision between the second stack and the second substrate.

[0110] The transfer of semiconductor chips is performed while adjusting the position to match the actual mounting location of the semiconductor chip in the semiconductor device being fabricated. For example, when fabricating an LED substrate, the transfer is performed while shifting the pitch of the LED elements to match the pixel size of the LEDs and the arrangement of RGB. Next, the second substrate on which the LED elements have been transferred and the circuit board are placed facing each other and pressed together to create a circuit board with the LED elements mounted. When performing the transfer using the laminate according to the embodiment of the present invention, the transfer can be performed with high positional accuracy, so the semiconductor chip can be transferred without misalignment from the circuit on the substrate on which it will finally be mounted, and mounting defects caused by misalignment can be reduced.

[0111] In the method for manufacturing a semiconductor device according to an embodiment of the present invention, the laser light preferably has a wavelength of 248 nm, 266 nm, 308 nm, or 355 nm, and it is particularly preferable to use a wavelength such that the absorbance of the cured film is 0.4 or higher. By using these laser lights, damage to the semiconductor chip can be reduced. Furthermore, even minute semiconductor chips such as μLEDs can be accurately transferred. Among the 248 nm, 266 nm, 308 nm, and 355 nm laser lights, excimer lasers and YAG lasers are particularly preferred.

[0112] Furthermore, in the semiconductor device manufacturing method of the present invention, it is preferable that the second substrate is a circuit board. If the second substrate is a circuit board, the substrate transferred by the above method can be directly used to manufacture a semiconductor device. Concerns about misalignment due to handling of the substrate after transfer are eliminated, and positional accuracy can be further improved. As the circuit board, known types such as TFT substrates and printed wiring boards can be used.

[0113] The present invention will be described below with reference to examples, but the present invention is not limited to these examples. First, the evaluation methods in each example and comparative example will be explained.

[0114] (1) Measurement of Gram Absorption Coefficient (a) A sample was prepared by dissolving the compound in acetonitrile (high-performance liquid chromatograph grade used; the same applies hereafter) and packed into a quartz cell with a path length of 1 cm. This quartz cell was set in a UV-Vis spectrophotometer (Hitachi High-Tech Science Co., Ltd., U-2910) and the absorbance from 200 nm to 500 nm was continuously measured. From the obtained spectrum, the maximum absorption wavelength λ in the range of 240 nm to 400 nm was determined. ＭＡＸ Value A ＭＡＸ The data was read, and the Gram extinction coefficient was calculated using the following formula. When multiple maximum absorption wavelengths exist, the largest A ＭＡＸ λ ＭＡＸ The Gram extinction coefficient was calculated for A. A quartz cell filled with acetonitrile was used as a reference sample. ＭＡＸ The sample concentration was adjusted so that it fell within the range of 0.1 to 1.0.

[0115] Gram extinction coefficient [L / (g·cm)] = A ＭＡＸ / (Sample concentration [g / L]・Path length [cm]) For example, it can be calculated as follows: (a) 100 mg of the compound was dissolved in acetonitrile to make a 100 g solution. 1 g of this solution was mixed with acetonitrile to make a 100 mL solution, which was then mixed uniformly to obtain a sample with a concentration of (0.01 g / L). The absorbance was measured using this sample, and the maximum absorption wavelength λ was determined. ＭＡＸIf the absorbance at is 0.8, the gram extinction coefficient [L / (g·cm)] = 0.8 / (0.01 [g / L]・1 [cm]) = 80 [L / (g·cm)]. Note that (a) if the compound is commercially available in a diluted state in a solvent, the sample concentration shall be determined based on the solid content.

[0116] (2) Method for fabricating the laminate A 4-inch quartz glass substrate with a thickness of 0.6 mm (manufactured by Daiko Seisakusho Co., Ltd., with absorbance of 0.01 at wavelengths of 248 nm, 266 nm, 308 nm, and 355 nm) was coated with a varnish for curing the film, prepared by the method described below, using a spinner, pre-baked on a hot plate, and then cured to create a cured film on the glass substrate, thereby fabricating the first laminate.

[0117] The pre-bake conditions are as follows:

[0118] Examples 1-21 and Comparative Examples 1-5: The curing conditions at 120°C for 3 minutes are as follows.

[0119] Examples 1-21 and Comparative Examples 1-5: Using a gas oven "INH-21CD" (manufactured by Koyo Thermo Systems Co., Ltd.), the temperature was raised from room temperature to 250°C at a rate of 5°C / min under a nitrogen atmosphere (oxygen concentration of 100 ppm by volume or less), heated at 250°C for 30 minutes, and then cooled to room temperature to cure. However, in Examples 6, 7, 9 and Comparative Example 5, the temperature was changed from 250°C to 200°C.

[0120] The thickness of the cured film was measured using a laser microscope (VK-9510, manufactured by Keyence Corporation).

[0121] A separate 4-inch LED substrate (manufactured by EPILEDS, with alignment marks) was prepared and cut into 20mm squares using a dicing machine. The LEDs mounted are as follows. The size of the semiconductor chip, the size of the protruding electrode portion, and the distance between adjacent elements were measured using a scanning electron microscope (Hitachi High-Tech Corporation, S-4800).

[0122] Crystal growth substrate: Sapphire (thickness 0.8 mm) Semiconductor chip type: GaN Semiconductor chip size: 19.2 μm × 37.5 μm × 7.6 μm (including electrode part) Number of electrode parts: 2 per side Electrode part size: 17.5 μm × 11.0 μm × 3.4 μm Electrode part type: Au Distance between adjacent elements: 10.0 μm The hardened film surface of the first laminate and the semiconductor chip surface of the 4-inch LED substrate were superimposed so that they were in contact, and bonded using a flip-chip bonder (Toray Engineering Co., Ltd., FC-3000WS) under pressure of 57.8 kN, 25°C, for 2 minutes. After that, a 266 nm wavelength laser device (HOYA Corporation, HSL-5500III SUV, pulse width 5-7 nec, energy density 600 mJ / cm²) was used from the first substrate side. ２ A laser was used to irradiate the entire surface of the LED substrate, separating the crystal growth substrate at the interface between the crystal growth substrate and the semiconductor chip, thereby fabricating a second layer.

[0123] (3) Evaluation of semiconductor chip retention over time The second laminate prepared in (2) was stored for one week at room temperature of 23°C and humidity of 45%. If the cured film flows during storage, the semiconductor chips laminated on the cured film will move. If the semiconductor chips move, the positional accuracy of the subsequent transfer will decrease. After storage for one week, any 0.25 mm ２ For the semiconductor chips placed in the container, the percentage of semiconductor chips that had moved 3.0 μm or more compared to their state before storage was determined as follows: less than 3% was classified as "a", 3% or more but less than 10% as "b", and 10% or more as "c". A lower percentage of semiconductor chips that have moved 3.0 μm or more is preferable because it indicates better retention over time. The displacement distance was determined by rounding to two decimal places.

[0124] (4) Evaluation of semiconductor chip retention during cleaning The second laminate prepared in (2) was immersed in a hydrochloric acid aqueous solution with a pH of 1 and washed at 40 degrees Celsius for 10 minutes to remove debris originating from the crystal growth substrate. When the cured film is damaged by the hydrochloric acid aqueous solution, the semiconductor chips laminated on the cured film move. When the semiconductor chips move, the positional accuracy of the subsequent transfer decreases. After cleaning, any 0.25 mm ２For the semiconductor chips placed in the container, the percentage of semiconductor chips that had moved 3.0 μm or more compared to their state before storage was determined as follows: less than 3% was classified as "a", 3% or more but less than 10% as "b", and 10% or more as "c". A lower percentage of semiconductor chips that have moved 3.0 μm or more is preferable because it indicates better retention during cleaning. The displacement distance was determined by rounding to two decimal places.

[0125] (5) Semiconductor chip transfer test (5-1) Fabrication of opposing substrate A 4-inch alkali-free glass substrate (Eagle XG, Corning Corporation) with a thickness of 0.5 mm was coated with a diluted solution prepared by diluting polydimethylsiloxane with toluene so that the mass ratio of polydimethylsiloxane to toluene was 1:3, using a spinner, and heated on a hot plate at 120°C for 3 minutes to form an adhesive layer on the glass substrate. The thickness of the adhesive layer after heat curing was measured with an optical film thickness gauge (Lambda Ace, Dainippon Screen Co., Ltd., refractive index = 1.543), and a second substrate was fabricated as an opposing substrate with an adhesive layer thickness of 5.0 μm.

[0126] (5-2) The semiconductor chip transfer laser light source, (3) the second laminate after evaluation of semiconductor chip retention, and the second substrate were arranged vertically in this order. At this time, the surface of the second laminate on which the semiconductor chip is held and the surface of the opposing second substrate on which the adhesive layer is formed were held facing each other so that the gap (clearance) between the semiconductor chip surface and the adhesive layer surface was 50 μm or 100 μm. The laser beam spot size was a rectangular shape of 18 μm × 36 μm, and the positions of the laser light source and the laminate were adjusted so that one semiconductor chip was placed in the center of the laser beam spot, and adjacent semiconductor chips were not hit by the laser beam. A YAG laser with a wavelength of 355 nm (HOYA Corporation, HSL-5500IIIST) was used as the laser light source. The energy density was set to 50, 100, and 200 mJ / cm² for the semiconductor chip placed at the laser beam irradiation position. ２ The irradiation was performed while varying the energy density. Laser transfer tests were conducted on 20 semiconductor chips at each energy density.

[0127] (5-3) Evaluation of positional accuracy The opposing second substrate after irradiation with laser light as described in (5-2) was observed, and the positional accuracy was evaluated using the following method. An image of the semiconductor chip on the second stack before laser transfer and an image of the semiconductor chip on the second substrate after laser transfer were acquired using a CCD camera projected from a lens installed coaxially with the laser light source. The amount of positional displacement of the center of the semiconductor chip before and after transfer was calculated from the center coordinates of the semiconductor chip in each acquired image. The amount of positional displacement was calculated only for semiconductor chips that were transferred without being rotated or inverted, and the positional accuracy was evaluated based on the average value. The average value of the positional displacement was determined by rounding to two decimal places.

[0128] (5-4) Evaluation of the cleanability of residue after semiconductor chip transfer The opposing second substrate, for which the average value of the positional displacement amount was 3.0 μm or less in the positional accuracy evaluation in (5-3), was cleaned using the following method. The surface of the opposing second substrate on which the semiconductor chip was transferred was cleaned using a plasma processing device (Hitachi High-Technologies Corporation, SPC-100B) under the following conditions. Etching mode: RIE Gas: Oxygen gas Flow rate: 20 sccm Output: 500 W Time: 10 minutes Pressure: 20 Pa After cleaning, the surface of the semiconductor chip was observed with an FE-SEM (Hitachi High-Technologies Corporation, S-4800), and it was determined that if no adhesive residue remained on the surface of the semiconductor chip, it was "a", if adhesive residue remained but no adhesive residue remained on the surface of the semiconductor chip after re-cleaning with the plasma processing device for 10 minutes, it was "b", and if adhesive residue remained even after re-cleaning it was "c".

[0129] (6) Evaluation of surface irregularities of the film For the first laminate prepared according to the procedure in (2), samples with surface irregularities so severe that semiconductor chips could not be bonded were classified as C, samples with uneven film surfaces resembling orange peel were classified as B, and samples with smooth surfaces and no unevenness were classified as A, and the film surface was evaluated accordingly.

[0130] (7) Absorbance evaluation of the cured film The first laminate prepared according to the procedure in (2) was placed in a UV-Vis spectrophotometer (Hitachi High-Tech Science Co., Ltd., U-2910) and the absorbance from 240 nm to 780 nm was continuously measured. Maximum absorbance A in the range of 240 nm to 400 nm ｍａｘ２４０－４００ and the maximum absorbance A in the range of over 400 nm and up to 780 nm. ｍａｘ４００－７８０ Measure A ｍａｘ２４０－４００ / A ｍａｘ４００－７８０ The following was calculated. ｍａｘ２４０－４００ / A ｍａｘ４００－７８０ The value is determined by rounding to the first decimal place.

[0131] (8) Measurement of adhesive strength of the cured film A 1 cm x 9 cm piece of "Kapton" (registered trademark) film was pressed onto the surface of the first laminate prepared according to the procedure in (2) using a vacuum laminator at 0.6 MPa and 35°C. The pressed "Kapton" (registered trademark) tape was then peeled off using a tensile testing machine at a constant speed of 2 mm / second perpendicular to the cured film to measure the adhesive strength. The adhesive strength was measured three times, and the value was determined by rounding to the third decimal place.

[0132] The raw materials, additives, and solvents used in the preparation example are as follows:

[0133] CHN: Cyclohexanone (manufactured by Toyo Gosei Kogyo Co., Ltd.) Tinuvin 477: "Tinuvin" (registered trademark) 477 (a mixture of 2,4,6-tris[4-(1-octyloxycarbonyl)ethyloxy-2-hydroxyphenyl]-1,3,5-triazine and propylene glycol 1-monomethyl ether 2-acetate, consisting of a mixture of 80 wt% and 20 wt% of each) (manufactured by BASF), corresponding to compound (a) having three hydroxyl groups and nine electrophilically replaceable hydrogen atoms bonded to carbon atoms in the molecule. Tinuvin 400: "Tinuvin" (registered trademark) 400 (a mixture of 2[4,6-bis(2,4-dimethylphenyl)-1,3,5-triazine-2-yl]-5[2-hydroxy-3-(dodecyloxy)propoxy]phenol and 2[4,6-bis(2,4-dimethylphenyl)-1,3,5-triazine-2-yl]-5[2-hydroxy-3-(tridecyloxy)propoxy]phenol and propylene glycol 1-monomethyl ether, with the former two compounds totaling 85 wt% and propylene glycol 1-monomethyl ether at 15 wt%) (manufactured by BASF), corresponding to compound (a) having two hydroxyl groups in the molecule. Tinuvin 479: "Tinuvin" (registered trademark) 479 (2[4[4,6-bis(biphenyl-4-yl)-1,3,5-triazine-2-yl]-3-hydroxyphenoxy]isooctyl propanoate) (manufactured by BASF), comparative compound of (a) compound having one hydroxyl group in the molecule TrisP-PA: α,α-bis(4-hydroxyphenyl)-4-(4-hydroxy-α,α-dimethylbenzyl)-ethylbenzene (manufactured by Honshu Chemical Industry Co., Ltd.), comparative compound of (a) compound having three hydroxyl groups and a carbon atom bonded to 16 electrophilically replaceable hydrogen atoms in the molecule VG3101L: 2,2'-[[1-[4-[1-methyl-1-[4-(2-oxyranylmethoxy)phenyl]ethyl]phenyl]ethylidene]bis(4,1-Phenyleneoxymethylene)bis-oxirane (manufactured by Printec Co., Ltd.), equivalent to compound (b) having three epoxy groups in the molecule. Celoxide 2021P: "Celoxide" (registered trademark) 2021P (7-oxabicyclo[4.1.0]hept-3-ylmethyl 7-oxabicyclo[4.1.0]heptan-3-carboxylate) (manufactured by Daicel Corporation), equivalent to compound (b) having two epoxy groups in the molecule. Denacol EX-121: "Denacol" (registered trademark) EX-121 (2-ethylhexylglycidyl ether) (manufactured by Nagase ChemteX Corporation), a comparative compound of compound (b) having one epoxy group in the molecule. HMOM-TPHAP: A mixture of 4,4',4"-(ethane-1,1,1-triyl)tris(2,6-bis(methoxymethyl)phenol and γ-butyrolactone, consisting of a mixture of 20 wt% and 80 wt% of each (manufactured by Honshu Chemical Industry Co., Ltd.), corresponding to compound (b) having six alkoxymethyl groups in the molecule. DMOM-PTBP: 4-(1,1-dimethylethyl)-2,6-Bis(methoxymethyl)phenol (manufactured by Honshu Chemical Industry Co., Ltd.), equivalent to compound (b) having two alkoxymethyl groups in the molecule MDI: Bis(4-isocyanatophenyl)methane (manufactured by Fujifilm Wako Pure Chemical Industries, Ltd.), equivalent to compound (b) having two isocyanate groups in the molecule N-865: Cresol novolac type epoxy resin (manufactured by DIC Corporation), equivalent to compound (b) having three or more epoxy groups in the molecule S-6000P: Reocote S-6000P (20% by mass of acrylic resin, 80% by mass of propylene glycol 1-monomethyl ether 2-acetate) (manufactured by Toray Coatex Co., Ltd., Mw = 500000), equivalent to compound (c) S-2000P: Leocote S-2000P (20% by mass of acrylic resin, 80% by mass of propylene glycol 1-monomethyl ether 2-acetate) (manufactured by Toray Coatex Co., Ltd., Mw = 1,000,000), equivalent to (c) compound. PS-7804: Phenolic resin (manufactured by Gun-ei Chemical Industry Co., Ltd., Mw = 5,000), equivalent to (c) compound. PVAc: Polyvinyl acetate (manufactured by Sigma-Aldrich, Mw = 80,000 to 120,000), equivalent to (c) compound. Poly(acrylic acid): Polyacrylic acid (manufactured by Sigma-Aldrich, Mw = 1,250,000), equivalent to (c) compound. Polyacrylamide: Polyacrylamide (manufactured by Sigma-Aldrich, Mw = 40,000), equivalent to (c) compound.

[0134] Example 1: 25.00 g of Tinuvin 477 (20.00 g solids, 80 parts by mass), 3.00 g of VG3101L (12 parts by mass), 10.00 g of S-6000P (2.00 g solids, 8 parts by mass), and 87 g of CHN were weighed and added to a 200 mL flask and stirred. After stirring, the mixture was filtered using a high-density PTFE filter with a pore size of 1 μm to prepare the varnish.

[0135] Furthermore, the maximum absorption wavelength and Gram extinction coefficient of compound (a) were evaluated according to the evaluation method described above, and the results are summarized in Table 1. The maximum absorption wavelength of the mixture of Tinuvin 477 and Tinuvin 400 in a 1:1 ratio by mass was in the range of 240 nm to 400 nm, and the Gram extinction coefficient was in the range of 40 L / (g·cm) to 4000 L / (g·cm).

[0136] Examples 2-21 and Comparative Examples 1-5: Varnishes were prepared in the same manner as in Example 1 using the compounds listed in Tables 2 and 3. The first and second laminates were then fabricated using the obtained varnishes according to the evaluation method described above. The evaluation results of the fabricated laminates are summarized in Tables 2 and 3.

[0137]

[0138]

[0139]

[0140]

[0141] The results in Tables 2 and 3 show that the laminates of Examples 1 to 21 were able to transfer semiconductor chips with excellent positional accuracy. On the other hand, Comparative Example 5 remained fluid even after applying the varnish for curing the film, followed by pre-baking and heat curing, and could not proceed to the next step. In Comparative Examples 1 and 3, the cured film flowed during storage, causing the semiconductor chips to move significantly, resulting in poor semiconductor chip retention. Therefore, it was not possible to transfer the semiconductor chips with good positional accuracy. Comparative Examples 2 and 4 had low reactivity to laser light and an energy density of 50 mJ / cm². ２ Therefore, it was not possible to transfer the semiconductor chip.

[0142] 11 Laser-transparent first substrate 12 Cured film 14 Semiconductor chip 15 Support 16 Temporary adhesive 17 Crystal growth substrate 18 Semiconductor substrate 21 Second substrate 31 Laser light 41 Pressing device 51 Photomask 110 First laminate 120 Second laminate 130 Semiconductor chip temporary adhesive substrate 140 Semiconductor chip attached substrate

Claims

1. A composition comprising compound (a) and compound (b), wherein compound (a) accounts for more than 50% by mass and 95% by mass or less, based on 100% by mass of the solid content of the composition. Compound (a): A compound having two or more groups in its molecule that react and bond with the crosslinking group of compound (b), having a maximum absorption in the wavelength range of 240 nm or more and 400 nm or less, and having a Gram extinction coefficient of 40 L / (g·cm) or more and 4000 L / (g·cm) or less at the maximum absorption wavelength. Compound (b): A compound that does not fall under compound (a), has two or more crosslinking groups in its molecule, wherein the crosslinking groups are groups selected from the group consisting of epoxy groups, oxetanyl groups, alkoxymethyl groups, methylol groups, and isocyanate groups.

2. The maximum value A of the absorbance of the cured film obtained from the composition in the range of 240 nm to 400 nm. ｍａｘ２４０－４００ However, the maximum absorbance A in the range of over 400 nm and up to 780 nm is... ｍａｘ４００－７８０ The composition according to claim 1, which is 20 times or more.

3. The composition according to claim 1, further comprising compound (c) in an amount of 1% by mass or more and 25% by mass or less based on 100% by mass of the solid content of the composition. Compound (c): A resin that does not fall under either compound (a) or compound (b) above.

4. The composition according to claim 3, wherein the weight-average molecular weight of compound (c) is 50,000 or more and 1,000,000 or less.

5. The composition according to claim 1, wherein the compound (b) has three or more crosslinking groups in its molecule.

6. The composition according to claim 1, wherein the crosslinking group of compound (b) is an epoxy group.

7. The composition according to claim 6, wherein the group that reacts and bonds with the crosslinking group of compound (b) of compound (a) is a hydroxyl group.

8. The composition according to claim 1, wherein the crosslinking group of the compound (b) is an alkoxymethyl group.

9. The composition according to claim 8, wherein the group that reacts and bonds with the crosslinking group of compound (b) of compound (a) is a carbon atom to which an electrophilically replaceable hydrogen atom is bonded.

10. The composition according to claim 3, wherein the compound (c) comprises one or more resins selected from the group consisting of acrylic resins, phenolic resins, and polyvinyl acetate.

11. A laminate comprising a first substrate having laser transparency and a cured film obtained from any one of the compositions described in claims 1 to 10.

12. The laminate according to claim 11, wherein a semiconductor chip is laminated on the surface of the cured film that is opposite to the surface in contact with the first substrate.

13. A method for manufacturing a semiconductor device, comprising steps (A) and (B). Step (A): A step of placing a second substrate opposite to the surface on which the semiconductor chips of the laminate described in claim 12 are stacked. Step (B): A step of irradiating the laminate with laser light from the side of the first substrate to transfer the semiconductor chips to the second substrate.

14. The method for manufacturing a semiconductor device according to claim 13, further comprising performing step (C) before step (A). Step (C): A step of exposing the surface of the laminate on which the semiconductor chips are stacked to an aqueous solution with a pH of 5 or less.

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