Optical sensor for detecting biosignal and electronic device comprising same

Abstract

Disclosed is an optical sensor for detecting a biosignal The optical sensor comprises: a substrate including a groove; a laser diode which is inserted into the groove and includes an active layer and a plurality of light beams of different wavelengths emitted from a plurality of light-emitting points of the active layer; a plurality of waveguides disposed inside the substrate and configured to guide the plurality of light beams emitted from the active layer of the laser diode; a plurality of first optical lines which are disposed inside the substrate, have one end connected to the plurality of waveguides and the other end connected to the plurality of light output structures, and transmit the plurality of light beams guided along the plurality of waveguides to the plurality of light output structures; second optical lines disposed inside the substrate and branched from one of the plurality of first optical lines; and a light detection element which is disposed on the substrate and detects light transmitted along the second optical lines. The laser diode is configured to be inserted into the groove such that the heights of the plurality of light-emitting points of the active layer are respectively aligned with the heights of the plurality of optical waveguides.

Description

Optical sensor for detecting biosignals and electronic device including the same

[0001] The present disclosure relates to an optical sensor for detecting a biosignal of a subject to examination in a non-invasive manner and an electronic device including the same.

[0002] Methods for measuring the content of human body components (e.g., components in blood) can be classified into invasive and non-invasive methods. Invasive measurement methods involve extracting blood from a collection site using a lancet and injecting it into a test strip or diagnostic reagent. Non-invasive measurement methods allow for relatively rapid blood glucose measurement as they do not require a blood collection process.

[0003] The information described above may be provided as related art for the purpose of aiding understanding of the present disclosure. No claim or determination is made as to whether any of the foregoing may be applied as prior art related to the present disclosure.

[0004] According to one aspect of the present disclosure, an optical sensor for detecting a biosignal is provided. The optical sensor may include: a substrate having a groove; a laser diode inserted into the groove and comprising a plurality of lights of different wavelengths emitted from an active layer and a plurality of light-emitting points of the active layer; a plurality of waveguides disposed within the substrate and configured to guide a plurality of lights emitted from the active layer of the laser diode; a plurality of first light lines disposed within the substrate, one end of which is connected to the plurality of waveguides and the other end of which is connected to a plurality of light-output structures, and which transmit the plurality of lights guided along the plurality of waveguides to the plurality of light-output structures; a second light line disposed within the substrate and branched from one of the plurality of first light lines; and a light detection element disposed on the substrate and which detects light transmitted along the second light lines. The laser diode may be configured to be inserted into the groove such that a plurality of light-emitting points of the active layer are aligned with each of the plurality of light-waveguides.

[0005] According to another aspect of the present disclosure, an optical sensor for detecting biosignals is provided. The optical sensor may include: a substrate comprising a plurality of grooves; a plurality of laser diodes each inserted into the plurality of grooves; and a plurality of photodetectors disposed on the upper surface of the substrate and detecting some of the light emitted from the plurality of laser diodes. Each of the plurality of laser diodes may include an active layer that emits light of different wavelengths. The substrate may include: a plurality of waveguides disposed adjacent to the plurality of grooves within the substrate and guiding light emitted from the front of each of the plurality of laser diodes to the plurality of photodetectors; a plurality of first light lines disposed within the substrate and each connected to the plurality of waveguides to guide light transmitted along the plurality of waveguides to a plurality of light output structures; and a plurality of second light lines disposed within the substrate, branched from the plurality of first light lines, and guiding light to the photodetectors.

[0006] According to another aspect of the present disclosure, an optical sensor for detecting biosignals is provided. The optical sensor may include: a laser diode emitting a plurality of lights; a substrate having a groove into which the laser diode is inserted; a plurality of waveguides disposed within the substrate and guiding the plurality of lights; a plurality of light output structures disposed within the substrate and emitting the plurality of lights guided by the plurality of waveguides toward a target for inspection; and a lens disposed spaced apart from the substrate and focusing the plurality of lights emitted from the plurality of light output structures toward the target for inspection.

[0007] According to another aspect of the present disclosure, an electronic device is provided. The electronic device may include: a housing comprising a light-transmitting material; an optical sensor disposed inside the housing and emitting light toward a test object outside the housing; an optical interface that incidents the light emitted from the optical sensor onto the test object; and a photodiode that detects light reflected from the test object. The optical sensor may include: a laser diode comprising an active layer that emits light of different wavelengths in a defined wavelength band; a substrate comprising a groove into which the laser diode is inserted, a plurality of waveguides each guiding light emitted from the front surface of the laser diode, a plurality of first light lines each connected to the plurality of waveguides and guiding light transmitted along the plurality of waveguides to a plurality of light output structures, and a second light line branched from at least one of the plurality of first light lines; and a light detection element disposed on the substrate and detecting light transmitted along the first light line and light transmitted along the second light line. It may include a Mach-Zehnder interferometer disposed on the second optical line and the light detection element, which measures the intensity of light transmitted along the second optical line and a predetermined wavelength; and a thermal optical phase shifter disposed on the first optical line and configured to thermally control light transmitted to an output device to change the intensity of light emitted from the output device. The substrate may include a support on which the laser diode is seated so as to align the height of the active layer of the laser diode with the height of the plurality of waveguides.

[0008] Other aspects, advantages, and important features of the present disclosure will become apparent to those skilled in the art from the following detailed description disclosing various embodiments of the present disclosure together with the accompanying drawings.

[0009] The above and other aspects, features, and advantages of specific embodiments of the present disclosure will become more apparent from the following description together with the accompanying drawings.

[0010] FIG. 1 is a block diagram of an electronic device capable of performing the operations described according to one embodiment of the present disclosure.

[0011] FIG. 2 is a block diagram showing an example including a configuration capable of detecting a biosignal in a non-invasive manner using an electronic device according to one embodiment of the present disclosure.

[0012] FIG. 3 is a block diagram showing an optical sensor according to one embodiment of the present disclosure.

[0013] FIG. 4 is a perspective view showing an optical sensor according to one embodiment of the present disclosure.

[0014] FIG. 5 is a plan view of an optical sensor according to one embodiment of the present disclosure, showing an example divided into first, second, third, and fourth regions.

[0015] FIG. 6 is a plan view showing an optical sensor in one embodiment of the present disclosure.

[0016] FIG. 7 is a diagram showing an example in which a light source is coupled to a substrate of an optical sensor according to one embodiment of the present disclosure.

[0017] FIG. 8 is a plan view showing an example in which a light source is coupled to a substrate of an optical sensor according to one embodiment of the present disclosure.

[0018] FIG. 9 is a cross-sectional view taken along the line B-B' shown in FIG. 8, illustrating an example in which a light source is coupled to a substrate of an optical sensor according to one embodiment of the present disclosure.

[0019] FIG. 10 is a cross-sectional view taken along the line C-C' shown in FIG. 8, illustrating an example in which a light source is coupled to a substrate of an optical sensor according to one embodiment of the present disclosure.

[0020] FIG. 11 is an enlarged view of a portion of a light source according to one embodiment of the present disclosure.

[0021] FIG. 12 is a drawing showing an example of a light source coupled to a substrate according to one embodiment of the present disclosure.

[0022] FIG. 13 is a drawing showing configurations formed on a substrate of an optical sensor according to one embodiment of the present disclosure.

[0023] FIG. 14 is a graph showing an example in which the emission wavelength of a light source according to one embodiment of the present disclosure changes with temperature.

[0024] FIG. 15 is a drawing showing a Mach-Zehnder interferometer formed on a substrate of an optical sensor according to one embodiment of the present disclosure.

[0025] FIG. 16 is a drawing showing parts E1 and E2 shown in FIG. 15, which are part of a Mach-Zehnder interferometer formed on a substrate of an optical sensor according to one embodiment of the present disclosure.

[0026] FIG. 17 is a graph showing values ​​measured through a Mach-Zehnder interferometer formed on a substrate of an optical sensor according to one embodiment of the present disclosure.

[0027] Figure 18 is a graph showing the spectrum at different temperatures measured using a Mach-Zehnder interferometer.

[0028] FIG. 19 is a drawing showing a light detection element of an optical sensor according to one embodiment of the present disclosure.

[0029] FIG. 20 is a cross-sectional view taken along the line G-G' shown in FIG. 19, which is a diagram showing a light detection element of an optical sensor according to one embodiment of the present disclosure.

[0030] FIG. 21 is a diagram showing a thermal optical phase modulator of an optical sensor according to one embodiment of the present disclosure.

[0031] FIG. 22 is a drawing showing a plurality of optical output structured portions included in a substrate according to one embodiment of the present disclosure.

[0032] Similar reference numerals may be used throughout the drawing to depict identical or similar elements, features, and structures.

[0033] With reference to the accompanying drawings, the following description is provided to facilitate a comprehensive understanding of the various embodiments of the present disclosure as defined by the claims and their equivalents. While the present disclosure includes various specific details to aid such understanding, these should be considered merely illustrative. Accordingly, those skilled in the art will recognize that various changes and modifications to the various embodiments described herein may be made without departing from the scope and spirit of the present disclosure. Additionally, for clarity and brevity, descriptions of well-known functions and configurations may be omitted.

[0034] The terms and words used in the following description and claims are not limited to their bibliographic meanings but are used by the inventor merely to facilitate a clear and consistent understanding of the present disclosure. Accordingly, it will be apparent to those skilled in the art that the following description of various embodiments of the present disclosure is provided for illustrative purposes only and is not intended to limit the scope of the invention as defined by the appended claims and their equivalents.

[0035] The singular forms "a," "an," and "the" should be understood to include the plural form unless the context clearly indicates otherwise. Thus, for example, a reference to "component surfaces" includes references to one or more such surfaces.

[0036] Additionally, one or more embodiments according to the present disclosure may be modified in various other forms, and the scope of the technical concept of the present disclosure is not limited to the following embodiments. Rather, these embodiments are provided to make the present disclosure more faithful and complete and to fully convey the technical concept of the present disclosure to those skilled in the art.

[0037] In the present disclosure, expressions such as “have,” “may have,” “include,” or “may include” indicate the presence of such features (e.g., numerical values, functions, actions, or components such as parts) and do not exclude the presence of additional features.

[0038] In the present disclosure, expressions such as “A or B,” “at least one of A or / and B,” or “one or more of A or / and B” may include all possible combinations of items listed together. For example, “A or B,” “at least one of A and B,” or “at least one of A or B” may refer to cases including (1) at least one A, (2) at least one B, or (3) both at least one A and at least one B.

[0039] Expressions such as "first," "second," "first," or "second" used in this disclosure may modify various components regardless of order and / or importance, and are used only to distinguish one component from another and do not limit said components.

[0040] As used in this disclosure, the expression “configured to” may be replaced, depending on the context, with, for example, “suitable for,” “having the capacity to,” “designed to,” “adapted to,” “made to,” or “capable of.” The term “configured to” may not necessarily mean only “specifically designed to” in hardware.

[0041] In the present disclosure, a 'module' or 'part' performs at least one function or operation and may be implemented in hardware or software, or a combination of hardware and software. Additionally, a plurality of 'modules' or a plurality of 'parts' may be integrated into at least one module and implemented by at least one processor, except for a 'module' or 'part' that needs to be implemented in specific hardware.

[0042] Meanwhile, various elements and areas in the drawings are depicted schematically. Accordingly, the technical concept of the present disclosure is not limited by the relative sizes or spacing depicted in the attached drawings.

[0043] It should be understood that the blocks of each flowchart and combinations of flowcharts can be executed by one or more computer programs containing instructions. One or more computer programs as a whole may be stored in a single memory device, or one or more computer programs may be divided into multiple parts and stored in multiple memory devices.

[0044] All functions or operations described in this disclosure may be processed by a single processor or a combination of processors. A single processor or a combination of processors is a circuit that performs processing and includes circuits such as an application processor (AP, e.g., a central processing unit (CPU)), a communication processor (CP, e.g., a modem), a graphics processing unit (GPU), a neural processing unit (NPU) (e.g., an artificial intelligence (AI) chip), a wireless fidelity (Wi-Fi) chip, a Bluetooth® chip, a global positioning system (GPS) chip, a near-field communication (NFC) chip, a connectivity chip, a sensor controller, a touch controller, a fingerprint sensor controller, a display driver integrated circuit (IC), an audio codec chip, a universal serial bus (USB) controller, a camera controller, an image processing IC, a microprocessor unit (MPU), a system-on-chip (SoC), an IC, etc.

[0045] Hereinafter, with reference to the attached drawings, one or more embodiments according to the present disclosure are described in detail so that those skilled in the art can easily implement them.

[0046] FIG. 1 is a block diagram of an electronic device capable of performing the operations described according to one embodiment of the present disclosure.

[0047] Referring to FIG. 1, the electronic device (10) may be one of various forms of electronic devices, such as a smart watch (19), a smart ring (19a), and other similar computing devices (not shown). The components, their relationships, and their functions illustrated in FIG. 1 are illustrative only and are not intended to limit the implementations described or claimed in this document. The electronic device (10) may be referred to as a wearable device (e.g., a smart watch (19) and a smart ring (19a)), a small patch-type device attachable to the human body (19b in FIG. 1), a mobile device, a user device, a multifunctional device, a portable device, or a server.

[0048] According to one embodiment, the electronic device (10) may include components comprising at least one processor (11) (hereinafter referred to as processor (11)), at least one memory (12) (hereinafter referred to as memory (12)), at least one display (14) (hereinafter referred to as display (14)), at least one image sensor (15) (hereinafter referred to as image sensor (15)), at least one communication circuit (16) (hereinafter referred to as communication circuit (16)), and / or at least one sensor (17) (hereinafter referred to as sensor (17)). The components are merely exemplary. For example, the electronic device (10) may include other components (e.g., power management integrated circuitry (PMIC), audio processing circuit, antenna, rechargeable battery, or input / output interface). For example, some components may be omitted from the electronic device (10). For example, some components may be integrated into a single component.

[0049] According to one embodiment, the processor (11) may be implemented as one or more integrated circuit (or circuitry) chips and may perform various data processing operations. The processor (11) may include at least one electrical circuit and may process instructions (or programs, data) stored in memory (12) individually or collectively in a distributed manner. The processor (11) may include a processor assembly comprising one or more processing circuits. The processor (11) may include any processing circuit that is operative to control the performance and operation of one or more components of the electronic device (10) (e.g., memory (12), display (14), image sensor (15), communication circuit (16), and sensor (17)). For example, the processor (11) (e.g., application processor (AP)) may be implemented as a system on chip (SoC) (e.g., a single chip or chipset). For example, the processor (11) may be implemented with a plurality of cores (or at least one core circuit), a plurality of chips, or a plurality of chipsets. For example, the processor (11) may include one or more processing circuits. For example, the processor (11) may include one or more processing circuits configured to perform the various functions of the present disclosure individually and / or collectively. As an example without limitation, at least a portion of the processor (11) may be included in a first chip of the electronic device (10), and at least another portion of the processor (11) may be included in a second chip of the electronic device (10) different from the first chip of the electronic device (10).

[0050] For example, the processor (11) may include a central processing unit (11-1), a graphics processing unit (11-2), a neural processing unit (11-3), an image signal processor (11-4), a display controller (11-5), a memory controller (11-6), a storage controller (11-7), a communication processor (11-8), and a sensor interface (11-9). These components of the processor (11) are merely exemplary. For example, the processor (11) may include other components. For example, some components of the processor (11) may be omitted from the processor (11). For example, some components of the processor (11) may be included as separate components of the electronic device (10) outside of the processor (11). For example, some components of the processor (11) (e.g., memory controller (11-6)) may be included in other components (e.g., at least part of memory (12), an interface (e.g. available for connection to at least one component of the electronic device (10)), a display (14) and / or an image sensor (15)).

[0051] According to one embodiment, the processor (11) may cause other components of the electronic device (10) to perform various operations by executing instructions stored in memory (12). The CPU (11-1) (or central processing circuit) may be configured to control the components of the processor (11) based on the execution of instructions stored in memory (12) (e.g., volatile memory (12-1) and / or non-volatile memory (12-2)). The GPU (11-2) (or graphics processing circuit) may be configured to execute parallel operations (e.g., rendering). The NPU (11-3) (or neural processing circuit, or AI (artificial intelligence) chip) may be configured to execute operations for an artificial intelligence model (e.g., convolution computation). An ISP (11-4) (or image signal processing circuit) may be configured to process a raw image acquired through an image sensor (15) into a format suitable for a component within the electronic device (10) or a component of the processor (11). A display controller (11-5) (or display control circuit, or DPU (display processing unit)) may be configured to process an image acquired from a CPU (11-1), GPU (11-2), ISP (11-4), or memory (12) (e.g., volatile memory (12-1)) into a format suitable for a display (14). A memory controller (11-6) (or memory control circuit) may be configured to control reading data from the volatile memory (12-1) and writing data to the volatile memory (12-1). The storage controller (11-7) (or storage control circuit) may be configured to control reading data from non-volatile memory (12-2) and writing data to non-volatile memory (12-2).The CP (11-8) (communication processing circuit) may be configured to process data obtained from a component of the processor (11) into a format suitable for transmitting to another electronic device via the communication circuit (16), or to process data obtained from another electronic device via the communication circuit (16) into a format suitable for processing by the component of the processor (11). For example, the communication circuit (16) may include one or more communication circuits. The sensor interface (11-9) (or sensing data processing circuit, sensor hub) may be configured to process data regarding the state of the electronic device (10) and / or the state around the electronic device (10), obtained through the sensor (17), into a format suitable for the component of the processor (11).

[0052] According to one embodiment, the memory (12) may include one or more storage media (or one or more storage devices). For example, the memory (12) may include a memory assembly comprising one or more storage media. For example, the one or more storage media may include a hard disk drive, a permanent memory such as flash memory, ROM (read-only memory) (e.g., non-volatile memory (12-2)), a semi-permanent memory such as RAM (random access memory) (e.g., volatile memory (12-1)), any other suitable type of storage (or storage assembly), or any combination thereof. The memory (12) may include a cache memory, which is one or more different types of memory used to temporarily store data for a function or feature of the electronic device (10). As an example not limited to, the cache memory may be included within the processor (11). The memory (12) may be fixedly embedded within the electronic device (10) or incorporated into one or more suitable types of components (e.g., a SIM (subscriber identity module) card and / or an SD (secure digital) card) that can be repeatedly inserted into and removed from the electronic device (10).

[0053] For example, memory (12) may store one or more software applications, such as operating system (or system) software applications, firmware software applications, driver software applications, plugin (e.g., add-in, add-on, and / or applet) software applications, and / or any other suitable software applications. For example, the one or more software applications may include instructions executable by the processor (11). For example, memory (12) may store instructions that can be called by an application programming interface (API). For example, memory (12) may store instructions within a library.

[0054] According to one embodiment, the communication circuit (16) may support the establishment of a direct (e.g., wired) communication channel or a wireless communication channel between an electronic device (10) and an external electronic device (e.g., another electronic device (not shown) or a server (not shown)), and the performance of communication through the established communication channel. The communication circuit (16) may include one or more communication processors that operate independently of the processor (11) (e.g., application processor) and support direct (e.g., wired) communication or wireless communication. According to one embodiment, the communication circuit (16) may include a wireless communication circuit (16-1) (e.g., cellular communication circuit, short-range wireless communication circuit, or GNSS (global navigation satellite system) communication circuit) or a wired communication circuit (16-2) (e.g., LAN (local area network), or power line communication circuit). The corresponding communication circuit among these communication circuits can communicate with an external electronic device (not shown) through a first network (e.g., a short-range communication network such as Bluetooth, WiFi (wireless fidelity) direct, or IrDA (infrared data association)) or a second network (e.g., a legacy cellular network, a 5th generation (5G) network, a next-generation communication network, the Internet, or a computer network (e.g., a LAN or a WAN (wide area network)). These various types of communication circuits may be integrated into a single component (e.g., a single chip) or implemented as multiple separate components (e.g., multiple chips). The wireless communication circuit (16-1) can identify or authenticate the electronic device (10) within a communication network, such as the first network or the second network, using subscriber information (e.g., international mobile subscriber identity (IMSI)) stored in a subscriber identification module (not shown).

[0055] For example, the wireless communication circuit (16-1) can support 5G networks and next-generation communication technologies following the 4th generation (4G) network, for example, new radio access technology. The NR access technology can support high-speed transmission of high-capacity data (enhanced mobile broadband (eMBB)), minimization of terminal power and connection of multiple terminals (massive machine type communications (mMTC)), or high reliability and low latency (ultra-reliable and low-latency communications (URLLC)). The wireless communication circuit (16-1) can support a high-frequency band (e.g., mmWave band) to achieve a high data transmission rate, for example.

[0056] For example, the wireless communication circuit (16-1) can support various technologies for securing performance in the high-frequency band, such as beamforming, massive MIMO (multiple-input and multiple-output), full dimensional MIMO (FD-MIMO), array antenna, analog beam-forming, or large scale antenna. The wireless communication circuit (16-1) can support various requirements specified for the electronic device (10), external electronic device (e.g., another electronic device or network system (e.g., a second network)). According to one embodiment, the wireless communication circuit (16-1) can support a Peak data rate for eMBB realization (e.g., 20 Gbps or more), loss coverage for mMTC realization (e.g., about 164 dB or less), or U-plane latency for URLLC realization (e.g., downlink (DL) and uplink (UL) each 0.5 ms or less, or round trip 1 ms or less).

[0057] According to one embodiment, the sensor (17) may include an optical sensor (referenced as 100 in FIG. 2) capable of measuring components in a non-invasive manner for, for example, a test subject (20) in FIG. 2, for example, the test subject (20) may include human skin, blood vessels placed within the skin, and blood flowing along the blood vessels. The optical sensor (100) may emit light of a defined wavelength band. The light emitted from the optical sensor (100) may be incident on the test subject (20) through an optical interface (e.g., an optical lens or an optical film) (referenced as 200 in FIG. 2). The light incident on the test subject (20) may be absorbed and reflected within the test subject (20). The sensor (17) may include a photodiode (referenced as 300 in FIG. 2) that receives light reflected from the test subject (20). Lights reflected from the subject (20) can be incident on the photodiode (300) through the optical interface (200). The photodiode (300) can convert the light signal into an electrical signal. The electrical signal may be a biological signal. The processor (11) can analyze the subject based on the converted electrical signal and the data previously stored in the memory (12).

[0058] At least some of the above components can be connected to each other via a communication method between peripheral devices (e.g., bus, GPIO (general purpose input and output), SPI (serial peripheral interface), or MIPI (mobile industry processor interface)) and exchange signals (e.g., commands or data) with each other.

[0059] According to one embodiment, commands or data may be transmitted or received between the electronic device (10) and an external electronic device (not shown) through a server (not shown) connected to a second network. Each external electronic device (not shown) may be a device of the same or different type as the electronic device (10). According to one embodiment, all or part of the operations performed on the electronic device (10) may be performed on one or more external electronic devices (not shown). For example, if the electronic device (10) needs to perform a function or service automatically or in response to a request from a user or another device, the electronic device (10) may request one or more external electronic devices to perform at least part of the function or service instead of performing the function or service itself or additionally. One or more external electronic devices that receive the request may perform at least part of the requested function or service, or additional functions or services related to the request, and transmit the result of the execution to the electronic device (10). The electronic device (10) may process the above result as is or additionally and provide it as at least part of the response to the request. For this purpose, for example, cloud computing, distributed computing, mobile edge computing (MEC), or client-server computing technology may be used. The electronic device (10) may provide ultra-low latency services using, for example, distributed computing or mobile edge computing. The electronic device (10) may be applied to intelligent services (e.g., smart home, smart city, smart car, or healthcare) based on 5G communication technology and IoT-related technology.

[0060] FIG. 2 is a block diagram showing an example including a configuration capable of detecting a biosignal in a non-invasive manner using an electronic device according to one embodiment of the present disclosure.

[0061] Referring to FIG. 2, an electronic device (10) according to one embodiment may include a housing (referred to as 19-1 in FIG. 1) in which at least a portion includes a light-transmitting region, an optical sensor (100) disposed inside the housing (19-1) and capable of emitting light through the light-transmitting region of the housing (19-1) and receiving light reflected from a test object (20), an optical interface (200), and a photodiode (300). The optical sensor (100) can non-invasively measure the test object. For example, the electronic device (10) to which the optical sensor (100) is applied can measure components in the blood by applying a light signal to the skin without the process of collecting blood using a blood collection needle and analyzing the electrical signal that appears in response to the light signal. In this case, the electronic device (10) does not use a blood collection needle to measure the components of the test subject (e.g., blood), so it can avoid causing pain to the test subject, and can measure the amount of components (blood sugar) in the skin more quickly and accurately, and since it is portable, there may be no restrictions on the measurement location.

[0062] An optical sensor (100) according to one embodiment can measure biomedical properties. For example, the optical sensor (100) can perform cancer detection, disease detection, blood glucose measurement, metabolic fingerprinting in vivo, and / or hyperspectral imaging. The optical sensor (100) can be applied to measure a test target in a non-invasive manner. For example, the test target may be components in blood (e.g., blood glucose, protein, lactic acid, alcohol, glucose, hemoglobin, bilirubin, cholesterol, albumin, creatinine, and glycated hemoglobin) and body fluids (e.g., saliva, sweat, and urine), as well as microorganisms, enzymes, and cells. An optical sensor (100) according to one embodiment may also be applied to a petrochemical device. In this case, the optical sensor (100) may be applied to measure temperature, pressure, and concentration of chemical components in a petrochemical process.

[0063] According to one embodiment, the optical sensor (100) may emit light (e.g., lasers) having different wavelengths from a light source (e.g., referenced as 110 in FIG. 3) so as to cover a defined wavelength band for measuring an object to be inspected. For example, the wavelength band that the optical sensor (100) can cover may be, for example, about 2000 nm to 2400 nm, about 1500 nm to 1800 nm, or about 1000 nm to 1400 nm. For example, the light source (110) may include a plurality of laser diodes (e.g., referenced as 111, 112, 113, and 114 in FIG. 4). Since each of the plurality of laser diodes can emit light of different wavelengths within a defined wavelength band, the defined wavelength band can be covered while minimizing the number of laser diodes included in the optical sensor (100). Accordingly, the optical sensor (100) can have a compact size and the structure of the light source can be configured more simply, thereby simplifying the manufacturing process and / or reducing manufacturing costs.

[0064] According to one embodiment, the optical sensor (100) can improve the reduction of optical intensity and improve focusing efficiency by minimizing coupling loss that may occur when light emitted from a light source is incident on a waveguide side provided on a substrate (e.g., 101 in FIG. 4). The optical sensor (100) can improve measurement reliability by monitoring the emitted light in real time as the internal temperature and / or external temperature of the light source (110) changes when emitting light from the light source (110), and by controlling the light output when the light intensity changes.

[0065] According to one embodiment, the optical interface (200) can transmit light emitted from the optical sensor (100) to the subject (20). The optical interface (200) can transmit light emitted by the light source to the skin and collect light that is reflected or transmitted through the skin. For example, the optical interface (200) can be improved to reduce light loss by adjusting the light emitted by the light source so that it is properly incident on the skin. The optical interface (200) can improve detection accuracy by preventing light from being unnecessarily reflected or scattered from the surface of the skin.

[0066] For example, the optical interface (200) may include an optical lens, a light diffuser, and / or an anti-reflective film. If the optical interface (200) includes an optical lens (e.g., a convex lens or an aspherical lens), it can concentrate light into a narrow area of ​​the skin to enhance the measurement signal. If the optical interface (200) includes a light diffuser, it can evenly disperse light so that it is incident on the skin surface with a constant intensity, which may be advantageous for correcting structural irregularities of the skin. If the optical interface (200) includes an anti-reflective film, it can improve the signal-to-noise ratio (SNR) by further minimizing light interference through reducing unwanted reflections and improving transmittance.

[0067] According to one embodiment, the photodiode (300) can receive light that is reflected from the test subject (20) and passes through the optical interface (200) among the light incident on the test subject (20). The photodiode (300) can convert the received light (e.g., optical signals) into an electrical signal that can be processed by the processor (11). For example, the photodiode (300) may be a photodiode sensitive to a specific wavelength so as to be designed based on the absorption characteristics of a specific component (e.g., glucose) of the test subject (20) (e.g., blood). The photodiode (300) may be a photodiode with low noise characteristics so as to have higher accuracy.

[0068] Hereinafter, an optical sensor (100) according to one embodiment will be described with reference to the drawings.

[0069] FIG. 3 is a block diagram showing an optical sensor according to one embodiment of the present disclosure.

[0070] FIG. 4 is a perspective view showing an optical sensor according to one embodiment of the present disclosure.

[0071] FIG. 5 is a plan view of an optical sensor according to one embodiment of the present disclosure, showing an example divided into first, second, third, and fourth regions.

[0072] FIG. 6 is a plan view showing an optical sensor according to one embodiment of the present disclosure.

[0073] Referring to FIGS. 3, 4, 5 and 6, an optical sensor (100) according to one embodiment may be implemented through silicon photonics technology. The optical sensor (100) may be a photonic integrated circuit that is based on silicon and generates, transmits, manipulates, and detects light emitted from a laser diode.

[0074] According to one embodiment, the optical sensor (100) can emit light covering a defined wavelength band (e.g., about 2000 nm to 2400 nm). For example, the optical sensor (100) may include a first region (A1) capable of emitting light of different wavelengths between about 2000 nm and 2100 nm, a second region (A2) capable of emitting light of different wavelengths between about 2100 nm and 2200 nm, a third region (A3) capable of emitting light of different wavelengths between about 2200 nm and 2300 nm, and a fourth region (A4) capable of emitting light of different wavelengths between about 2300 nm and 2400 nm. For example, the first region (A1) and the third region (A3) of the optical sensor (100) may be arranged to face each other, and the second region (A2) and the fourth region (A4) of the optical sensor (100) may be arranged to face each other. In this case, the second region (A2) and the fourth region (A4) of the optical sensor (100) may be arranged between the first region (A1) and the third region (A3) of the optical sensor (100).

[0075] According to one embodiment, the optical sensor (100) can cover a wavelength band of approximately 2000 nm to 2400 nm. For example, the optical sensor (100) can cover a wavelength band of approximately 1500 nm to 1800 nm or approximately 1000 nm to 1400 nm. In this case, the light source (110) may be configured to emit light of different wavelengths in the corresponding wavelength band.

[0076] According to one embodiment, the optical sensor (100) may include a plurality of light output structures (180) that emit light from a first region (A1), a second region (A2), a third region (A3), and a fourth region (A4) toward an object to be inspected (20). For example, considering the arrangement of the first region (A1), the second region (A2), the third region (A3), and the fourth region (A4) of the optical sensor (100), the plurality of light output structures (180) may be arranged in a roughly circular manner to surround the area where the object to be inspected is located. For example, the plurality of light output structures (180) arranged in a circular manner may output light toward an optical interface (200, see FIG. 2) (e.g., a lens) spaced apart from the upper surface of the substrate (101) at a predetermined distance. The light emitted from the plurality of light output structures (180) may be focused to a point on the object to be inspected (20) by the optical interface (200). In this case, the center of the circular array of multiple optical output structures (180) and the center of the optical interface (200) may be located coaxially. The design of this optical sensor (100) can provide the path length of light transmitted to the multiple optical output structures (180) in each of the first region (A1), second region (A2), third region (A3), and fourth region (A4) of the optical sensor (100) to be approximately equal. Accordingly, the light output emitted in the first region (A1), second region (A2), third region (A3), and fourth region (A4) of the optical sensor (100) can be maintained generally uniformly.

[0077] For example, a plurality of optical output structures (180) may include a plurality of first optical output structures (181) connected to structures that guide light emitted from a first laser diode (111) in a first region (A1) (e.g., a plurality of first waveguides (105) and a plurality of first lines (107a) connected to a plurality of first waveguides (105). Additionally, a plurality of optical output structures (180) may include a plurality of second optical output structures (182), a plurality of third optical output structures (183), and a plurality of fourth optical output structures (184) each connected to structures that guide light emitted from a second laser diode (112) in a second region (A2), structures that guide light emitted from a third laser diode (113) in a third region (A3), and structures that guide light emitted from a fourth laser diode (114) in a fourth region (A4). For example, a plurality of light output structures (180) may each be composed of a grating coupler capable of emitting light approximately perpendicular to the upper surface of the substrate (101).

[0078] According to one embodiment, a first region (A1) of an optical sensor (100) may include a substrate (101), a light source (110), a spot size mode converter (130), a directional coupler (140), a Mach-Zehnder interferometer (MZI) (150), a light detection element (160), a thermal optical phase shifter (170), and a plurality of light output structures (180). For example, the directional coupler (140) may include a first directional coupler (141) and a second directional coupler (142) corresponding to one laser diode.

[0079] According to one embodiment, the first region (A1), second region (A2), third region (A3), and fourth region (A4) of the optical sensor (100) may share a substrate (101) that is a single configuration. The first region (A1), second region (A2), third region (A3), and fourth region (A4) of the optical sensor (100) may share two light detection elements with adjacent regions. For example, the first region (A1) of the optical sensor (100) may share a first light detection element (161) with the fourth region (A4), and may share a second light detection element (162) with the second region (A2). For example, each of the second region (A2), third region (A3), and fourth region (A4) of the optical sensor (100) may include configurations substantially identical to those included in the first region (A1).

[0080] According to one embodiment, the substrate (101) may be formed as a rectangle having four sides. The substrate (101) is not limited to a rectangle and may have various shapes (e.g., left-right and / or up-down symmetrical or up-down asymmetrical) considering the shape inside the electronic device (10).

[0081] According to one embodiment, the substrate (101) may include silicon or silicon nitride (Si3N4). For example, silicon nitride may have the characteristics of having relatively low optical loss and operating in a variety of wavelength ranges.

[0082] According to one embodiment, the substrate (101) may be provided with a receiving groove (103) into which a light source (110) can be coupled. For example, the receiving groove (103) may include a first receiving groove (103a), a second receiving groove (103b), a third receiving groove (103c), and a fourth receiving groove (103d) corresponding to a first side (102a), a second side (102b), a third side (102c), and a fourth side (102d) of the substrate (101), respectively.

[0083] According to one embodiment, the light source (110) may include a first laser diode (111), a second laser diode (112), a third laser diode (113), and a fourth laser diode (114). For example, each of the first laser diode (111), the second laser diode (112), the third laser diode (113), and the fourth laser diode (114) may emit light of different wavelengths. The first laser diode (111), the second laser diode (112), the third laser diode (113), and the fourth laser diode (114) may be coupled to the first receiving groove (103a), the second receiving groove (103b), the third receiving groove (103c), and the fourth receiving groove (103d) of the substrate (101), respectively. For example, the light emitted from the light source (110) may be used to measure the components of the inspection target (20). Some of the light emitted from the light source (110) may be used to measure wavelength changes in real time by a Mach-Zehnder interferometer (150) and to monitor noise in the light signal in real time by a light detection element (160). For example, the light detection element (160) may include a first light detection element (161) for detecting light emitted from a first laser diode (111), a second light detection element (162) for detecting light emitted from a second laser diode (112), a third light detection element (163) for detecting light emitted from a third laser diode (113), and a fourth light detection element (164) for detecting light emitted from a fourth laser diode (114).

[0084] According to one embodiment, the substrate (101) may include a plurality of waveguides (105) included in a path that transmits light emitted from a light source (110) to a light detection element (160). For example, the plurality of waveguides (105) may correspond to each of the first, second, third, and fourth laser diodes (111, 112, 113, 114) so ​​as to transmit a plurality of lights emitted from each of the first, second, third, and fourth laser diodes (111, 112, 113, 114). For example, the plurality of waveguides (105) may be arranged substantially parallel to each other at a predetermined interval along the longitudinal direction of each corresponding first, second, third, and fourth laser diode (111, 112, 113, 114) on the same plane (e.g., the xy plane of FIG. 6). For example, each of the plurality of waveguides (105) may include a first stage into which light enters and a second stage into which light exits, positioned on the opposite side of the first stage.

[0085] For example, the first laser diode (111) may emit light of nine different wavelengths. In this case, the plurality of waveguides (105) may include nine waveguides corresponding to the points where each of the nine light is emitted. In this way, the plurality of waveguides (105) may be arranged to correspond to the number of light emitted from the first laser diode (111). For example, the points where the light of the first laser diode (111) is emitted may be arranged at fixed intervals along the length direction of the first laser diode (111) (e.g., the x-axis direction in FIG. 6). For example, if the light emitted from the first laser diode (111) covers a wavelength band of about 2000 nm to 2100 nm, the light may have wavelengths that gradually increase by a constant wavelength interval from left to right of the first laser diode (111). For example, light emitted from the point closest to the left of the first laser diode (111) may have a minimum wavelength (e.g., about 2000 nm) or a wavelength adjacent to the minimum wavelength, and light emitted from the point closest to the right of the first laser diode (111) may have a maximum wavelength (e.g., 2100 nm) or a wavelength adjacent to the maximum wavelength.

[0086] According to one embodiment, the number of lights emitted from the first laser diode (111) and the plurality of waveguides (105) may not each be limited to 9. For example, the number of lights emitted from the first laser diode (111) and the plurality of waveguides (105) may include a fixed number (e.g., the number of lights emitted from the light source is about 36 or more) that can cover a fixed wavelength band capable of measuring the inspection target.

[0087] According to one embodiment, the substrate (101) may include a plurality of first light lines (106) that guide light transmitted along a plurality of waveguides (105) to light output structures (180). Each of the plurality of first light lines (106) may include a first end into which light transmitted from the waveguide (105) enters and a second end disposed opposite the first end into which light exits. Each of the plurality of first light lines (106) may have a first end of the first light line (106) connected to a second end of the waveguide (105), and a second end of the first light line (106) connected to the light output structures (180). For example, light emitted from a light source (110) can be transmitted along a plurality of waveguides (105), a plurality of first light lines (106), and a plurality of light output structures (180), and can be irradiated onto an inspection target (20) through an optical interface (200, see FIG. 2).

[0088] According to one embodiment, the substrate (101) may include a second light line (107) branched from some of the first light lines (106) among a plurality of first light lines (106). For example, it may be branched from the first light line that transmits the shortest wavelength among the plurality of first light lines (106) (e.g., the first light line closest to the left of the first laser diode (111) in FIG. 6) and the first light line that transmits the longest wavelength (e.g., the first light line closest to the right of the first laser diode (111) in FIG. 6), respectively. In this case, the number of second light lines (107a, 107b) corresponding to the first laser diode (111) may be two. For example, light transmitted through two second optical lines (107a, 107b) can be guided to a first Mach-Zehnder interferometer (151) and a second Mach-Zehnder interferometer (152), respectively, corresponding to the two second optical lines (107a, 107b). Light passing through the first and second Mach-Zehnder interferometers (151, 152) can be incident on a corresponding first light detection element (161) and a second light detection element (162), respectively. The first and second light detection elements (161, 162) can each convert the received light signal into an electrical signal.

[0089] According to one embodiment, the substrate (101) may include a third light line (107d) connected to the light exit side of the first Mach-Zehnder interferometer (151) and a fourth light line (107e) branched from the second light line (107a). For example, the third light line (107d) may be connected to a first grating coupler (181a). Light passing through the first Mach-Zehnder interferometer (151) may be guided to the first grating coupler (181a) via the third light line (107d). For example, the fourth light line (107e) may be connected to a second grating coupler (181b). Light transported along the fourth light line (107e) may be guided to the second grating coupler (181b).

[0090] According to one embodiment, the substrate (101) may include a fifth light line (107f) connected to the light exit side of the second Mach-Zehnder interferometer (152) and a sixth light line (107g) branched from the second light line (107b). For example, the fifth light line (107f) may be connected to a fifth grating coupler (182a). Light passing through the second Mach-Zehnder interferometer (152) may be guided to the fifth grating coupler (182a) via the fifth light line (107f). For example, the sixth light line (107g) may be connected to a sixth grating coupler (182b). Light transported along the sixth light line (107g) may be guided to the sixth grating coupler (182b).

[0091] For example, the processor (11) can control the light output by increasing the amount of current if it determines that the light output has decreased below a predetermined reference light output based on the electrical signal received through the first and second light detection elements (161, 162). After the amount of current is increased, the wavelength of the light signal may change in the long wavelength direction at a rate of about 0.09 to 0.1 nm / mA. This change in wavelength can be measured through the first and second Mach-Zehnder interferometers (151, 152). The processor (11) receives the measurement signal received from the first and second Mach-Zehnder interferometers (151, 152) and, based thereon, receives feedback on the amount of increase in the light output in the light output structure (180), and can control the amount of current to be additionally increased if it falls short of the predetermined light output. In this way, the first and second Mach-Zehnder interferometers (151, 152) of the optical sensor (100) can be used as feedback circuits.

[0092] For example, the first Mach-Zehnder interferometer (151) may be connected to a first light line (106) that transmits a minimum wavelength in the wavelength band emitted from the first laser diode (111) (e.g., the first light line corresponding to the leftmost side of the first laser diode (111) in FIG. 6), and the second Mach-Zehnder interferometer (152) may be connected to a first light line (106) that transmits a maximum wavelength in the wavelength band emitted from the first laser diode (111) (e.g., the first light line corresponding to the rightmost side of the first laser diode (111) in FIG. 6).

[0093] FIG. 7 is a diagram showing an example in which a light source is coupled to a substrate of an optical sensor according to one embodiment of the present disclosure.

[0094] FIG. 8 is a plan view showing an example in which a light source is coupled to a substrate of an optical sensor according to one embodiment of the present disclosure.

[0095] FIG. 9 is a cross-sectional view taken along the line B-B' shown in FIG. 8 according to one embodiment of the present disclosure.

[0096] FIG. 10 is a cross-sectional view along the line C-C' shown in FIG. 8 according to one embodiment of the present disclosure.

[0097] Referring to FIGS. 7, 8, 9 and 10, a substrate (101) according to one embodiment may include a support member (108) capable of supporting the bottom surface of a first laser diode (111) on the bottom surface (104a) of a first receiving groove (103a). For example, the support member (108) may include a first stopper (108a) and a second stopper (108b) that respectively support both sides of the bottom surface of the first laser diode (111).

[0098] According to one embodiment, a first laser diode (111) may have a reflective coating formed on its front surface (111-1) and rear surface (111-2), respectively, to control performance and adjust output characteristics. For example, an anti-reflection coating (not shown) may be formed on the front surface (111-1) of the first laser diode (111) from which light is emitted to minimize light reflection, and a high-reflection coating (not shown) may be formed on the rear surface (111-2) of the first laser diode (111) to maximize light reflection.

[0099] According to one embodiment, a laser diode (111) may have a first electrode (111h) disposed on its upper surface (e.g., the upper surface of the first semiconductor layer (111a)). For example, the first electrode (111h) may be electrically connected to a plurality of first pads (109a) disposed on the upper surface of the substrate (101) via a plurality of wires (109c). The plurality of first pads (109a) may be located adjacent to the receiving groove (103).

[0100] According to one embodiment, when the first laser diode (111) is seated on the upper surface of the support member (108), the points (111d) at which light is emitted from the front surface (111-1) of the first laser diode (111) can be aligned with corresponding waveguides (105) by the support member (108). For example, the support member (108) may include a first stopper (108a) and a second stopper (108b) that support both sides of the lower surface of the first laser diode (111). In this case, both sides of the lower surface of the first laser diode (111) may be seated on the upper surface (108a-1) of the first stopper (108a) and the upper surface (108b-1) of the second stopper (108b). Points (111d) where light is emitted from the front surface (111-1) of the first laser diode (111) may be located in the active layer (111c) of the first laser diode (111). In this way, the support member (108) may be configured to have a thickness (t1) (e.g., height from the bottom surface (104a) of the first insertion groove (103a) in FIG. 7 to the top surface of the support member (108) along the z-axis direction) such that the active layer (111c) of the first laser diode (111) can be aligned with a plurality of waveguides (105). For example, the centerline of the active layer (111c) of the first laser diode (111) (e.g., a virtual centerline parallel to the y-axis in FIG. 10) and the centerline of the plurality of waveguides (105) (e.g., a virtual centerline parallel to the y-axis in FIG. 10) may be located on the same xy plane. For example, the thickness of the first stopper (108a) and the thickness of the second stopper (108b) may have substantially the same thickness (t1). In this way, as the active layer (111c) of the first laser diode (111) and the plurality of waveguides (105) are aligned, the coupling loss of light emitted from the active layer (111c) of the first laser diode (111) and incident on the plurality of waveguides (105) can be minimized, thereby improving light attenuation.

[0101] According to one embodiment, there may be additional factors to be considered for alignment between the active layer (111c) of the first laser diode (111) and a plurality of waveguides (105). For example, the above elements may include the thickness of the second semiconductor layer (111b) (e.g., p-type semiconductor layer) of the first laser diode (111), the thickness of the passivation layer (111e) covering the second semiconductor layer (111b), the thickness of the conductive metal layer (111f) covering the passivation layer (111e), the thickness of the second electrode (111i) electrically connected to the second semiconductor layer (111b) through the conductive metal layer (111f), the thickness of the second pad (109b) that can be disposed on the bottom surface (104a) of the first receiving groove (103a) of the substrate (101), and the thickness of the solder (121) for electrically connecting the second electrode (111i) and the second pad (109b).

[0102] According to one embodiment, the spot size mode converter (130) can reduce or improve optical signal loss between the first laser diode (111) and a plurality of waveguides (105). For each of the plurality of waveguides (105), the spot size mode converter (130) may be provided at the first end of the waveguide (105) into which light enters. The spot size mode converter (130) may be configured in an edge coupling manner such that the first end of the spot size mode converter (130) maintains a first distance (S1) from the first surface (104b) of the first receiving groove (103a) into which light emitted from the first laser diode (111) enters.

[0103] According to one embodiment, the spot size mode converter (130) may have an inverse taper shape formed such that the first end of the spot size mode converter (130) corresponding to the first surface (104b) of the first receiving groove (103a) is narrower than the second end of the spot size mode converter (130) connected to the waveguide (105). The spot size mode converter (130) can convert the mode size of the light entering the spot size mode converter (130) so that it gradually reduces to match the waveguide mode, thereby minimizing energy loss of the light and improving optical coupling with the waveguide (105).

[0104] According to one embodiment, the spot size mode converter (130) may have a fixed length (L) (e.g., a passivation length along the y-axis direction in FIG. 8). For example, if the length of the spot size mode converter (130) is shorter than the fixed length (L), it is difficult to properly modify the mode size of the light, so it may be incompletely coupled with the waveguide (105) and excessive coupling loss may occur.

[0105] According to one embodiment, a space having a width of a second gap (S2) may be provided between the first laser diode (111) and the first receiving groove (103a). For example, the front (111-1), left side (111-3), and right side (111-4) of the first laser diode (111) may be spaced apart by a second gap (S2) from the first surface (104b), second surface (104c), and third surface (104d) of the first receiving groove (103a), respectively.

[0106] According to one embodiment, an epoxy resin (120) may be filled in the space provided between the first laser diode (111) and the first receiving groove (103a). The epoxy resin (120) may be filled between the bottom surface (104a) of the first receiving groove (103a) of the substrate (101) and the bottom surface of the first laser diode (111).

[0107] According to one embodiment, the epoxy resin (120) can create an environment in which the refractive index changes gradually. Accordingly, the light emitted from the first laser diode (111) can be reduced or improved by reflecting off the first surface (104b) of the first receiving groove (103a) and returning to the front surface (111-1) of the first laser diode (111).

[0108] According to one embodiment, the epoxy resin (120) can buffer thermal expansion according to the internal or external temperature increasing during the operation of the first laser diode (111). Physical stability can be maintained by improving the position change of the first laser diode (111) within the first receiving groove (103a) of the substrate (101) through the epoxy resin (120). Accordingly, the alignment state between the active layer (111c) of the first laser diode (111) and the plurality of waveguides (105) of the substrate (101) can be maintained.

[0109] FIG. 11 is an enlarged view of a portion of a light source according to one embodiment of the present disclosure.

[0110] Referring to FIG. 11, according to one embodiment, the first laser diode (111) may be a single chip that emits light of different wavelength bands at a set interval. For example, the first laser diode (111) may include a first semiconductor layer (e.g., n-type semiconductor layer) (111a), a second semiconductor layer (e.g., p-type semiconductor layer) (111b), and an active layer (111c) located between the first semiconductor layer (111a) and the second semiconductor layer (111b).

[0111] According to one embodiment, the first semiconductor layer (111a) may include an n-type substrate layer (111a-1), an n-type cladding layer (111a-2) on the n-type substrate layer (111a-1), and an n-type waveguide layer (111a-3) located on the n-type cladding layer (111a-2). The n-type cladding layer (111a-2) can stabilize the current path and improve leakage from the active layer (111c) to the surroundings. The n-type waveguide layer (111a-3) may have a refractive index similar to that of the active layer (111c) and may guide light to travel in a predetermined direction.

[0112] According to one embodiment, the second semiconductor layer (111b) may include a p-type waveguide layer (111b-1), a p-type cladding layer (111b-2) located on the p-type waveguide layer (111b-1), a p-type buried layer (111b-3) located on the p-type cladding layer (111b-2), and a p-type contact layer (111b-4) located on the p-type buried layer (111b-3). The p-type waveguide layer (111b-1) may have a symmetrical structure with respect to the n-type waveguide layer (111a-3) and may guide light to proceed along a predetermined path while minimizing light loss. The p-type cladding layer (111b-2), together with the n-type cladding layer (111a-2), can provide a difference in refractive index for light guiding to improve light leakage from the active layer (111c). The p-type embedded layer (111b-3) can improve current injection efficiency and dissipate heat to improve oscillation stability. The p-type contact layer (111b-4) is electrically connected to the second pad (109b) of the substrate (101) through the conductive metal layer (111f) and the second electrode (111i), and can provide electrical contact for power supply to the first laser diode (111) to allow current to be smoothly injected into the active layer (111c).

[0113] According to one embodiment, the p-type cladding layer (111b-2) may be configured to have a gradually lower doping concentration from approximately the center portion toward the portion adjacent to the p-type waveguide layer (111b-1) in order to facilitate the flow of charge carriers and reduce optical losses. Accordingly, the p-type cladding layer (111b-2) can improve the electric field distribution around the active layer (111c) and optimize or improve optical and electrical performance.

[0114] According to one embodiment, the active layer (111c) may have a high refractive index and a structure in which electrons and holes combine to emit light through current injection. The active layer (111c) of the first laser diode (111) may be aligned with a plurality of waveguides (105) by means of a support member (108). For example, when growing the p-type cladding layer (111b-2), the thickness of the p-type cladding layer (111b-2) may be adjusted so that the active layer (111c) can be configured to a height that allows it to be aligned with a plurality of waveguides (105).

[0115] According to one embodiment, the active layer (111c) can emit light of different wavelengths. The active layer (111c) may be provided with light-emitting points (111d-1, 111d-2) at positions approximately corresponding to a plurality of second pads (109b). The light-emitting points (111d-1, 111d-2) may be set by a plurality of trenches (111b-5) formed at a set interval in the second semiconductor layer (111b) by an etching process. In this case, the current propagating through the plurality of second pads (109b) may be concentrated in specific regions of the active layer (111c). If the current is concentrated in specific regions of the active layer (111c) (e.g., points where light is emitted (111d-1, 111d-2)), the region where oscillation occurs in the active layer (111c) is narrowed, and the luminous efficiency of the first laser diode (111) can also be improved.

[0116] According to one embodiment, grating structures (111g-1, 111g-2) capable of selectively amplifying light only at a specific wavelength may be provided in the area corresponding to each light-emitting point (111d-1, 111d-2) inside the p-type cladding layer (111b-2). Accordingly, light of different wavelengths may be emitted at each light-emitting point (111d-1, 111d-2). FIG. 11 illustrates two light-emitting points (111d-1, 111d-2) and two grating structures (111g-1, 111g-2) corresponding to each of them in the first laser diode (111), but is not limited thereto. For example, the first laser diode (111) may have three or more light-emitting points and three or more grating structures corresponding to each of them. Accordingly, when the first laser diode (111) is configured to emit light covering a wavelength band of about 2000 nm to 2100 nm, the light may have different wavelengths included in the wavelength band of about 2000 nm to 2100 nm.

[0117] According to one embodiment, the second laser diode (112), the third laser diode (113), and the fourth laser diode (114) may be configured substantially identically to the first laser diode (111). In this case, if the second laser diode (112) is configured to emit light covering a wavelength band of about 2100 nm to 2200 nm, the light may have different wavelengths included in the wavelength band of about 2100 nm to 2200 nm. If the third laser diode (113) is configured to emit light covering a wavelength band of about 2200 nm to 2300 nm, the light may have different wavelengths included in the wavelength band of about 2200 nm to 2300 nm. If the fourth laser diode (114) is configured to emit light covering a wavelength band of about 2300 nm to 2400 nm, the light may have different wavelengths included in the wavelength band of about 2300 nm to 2400 nm.

[0118] According to one embodiment, if the active layer (111c) includes an AlGaAsSb / GaSb 3-5 material, it can emit light in a wavelength band of about 2000 nm to 2400 nm. If the active layer (111c) includes an InGaAs / InP 3-5 material, it can emit light in a wavelength band of about 1500 nm to 1900 nm. If the active layer (111c) includes an InxGayAlzAs / GaAs 3-5 material, it can emit light in a wavelength band of about 1000 nm to 1400 nm.

[0119] According to one embodiment, the first laser diode (111) may include a distributed feedback laser (DFB). The first laser diode (111) is not limited to a DFB and may include a distributed bragg reflector laser (DBR), a fabric-perforated laser diode (FP-LD), or a tunable laser. The first laser diode (111) may include a reflective semiconductor optical amplifier (RSOA) and an external distributed bragg reflector laser (DBR).

[0120] FIG. 12 is a drawing showing an example of a light source coupled to a substrate according to one embodiment of the present disclosure.

[0121] Referring to FIG. 12, the first laser diode (111') coupled to the first receiving groove (103a') of the substrate (101') is not limited to a single chip emitting light of different wavelengths, but can be composed of a plurality of first laser diodes (111'-1, 111'-2, ..., 111'-n). For example, the plurality of first laser diodes (111'-1, 111'-2, ..., 111'-n) can each emit one light. In this case, the light emitted from each of the plurality of first laser diodes (111'-1, 111'-2, ..., 111'-n) may have different wavelengths included in a defined wavelength band (e.g., about 2000 nm to 2100 nm).

[0122] According to one embodiment, a plurality of first laser diodes (111'-1, 111'-2, ..., 111'-n) may be supported by a support member (108') protruding at a predetermined height from the bottom surface (104a') of the first receiving groove (103a'). The support member (108') may include a plurality of stoppers (108'-1, 108'-2, ..., 108'-n, 108'-n+1).

[0123] According to one embodiment, a single first laser diode (111'-1) may have its lower surface resting on the upper surface of two stoppers (108'-1, 108,-2). The number of multiple stoppers (108'-1, 108'-2, ..., 108'-n, 108'-n+1) may be one more than the number of multiple first laser diodes (111'-1, 111'-2, ..., 111'-n). The multiple stoppers (108'-1, 108'-2, ..., 108'-n, 108'-n+1) may be configured to have substantially the same height.

[0124] According to one embodiment, a second pad (109b') corresponding to the second electrode (111i') of a single first laser diode (111'-1) may be placed between two stoppers (108'-1, 108,-2). Second pads corresponding to the second electrodes of the remaining multiple first laser diodes (111'-2, ..., 111'-n) may also be located between a pair of stoppers.

[0125] According to one embodiment, a second laser diode (referred to as 112 in FIG. 6), a third laser diode (referred to as 113 in FIG. 6), and a fourth laser diode (referred to as 114 in FIG. 6), which are respectively coupled to a second receiving groove (referred to as 103b in FIG. 6), a third receiving groove (referred to as 103c in FIG. 6), and a fourth receiving groove (referred to as 103d in FIG. 6) of a substrate (101'), may each include a plurality of laser diodes such as a first laser diode (111').

[0126] FIG. 13 is a drawing showing configurations formed on a substrate of an optical sensor according to one embodiment of the present disclosure.

[0127] Referring to FIG. 13, according to one embodiment, a substrate (101) may include a first directional coupler (141) that is disposed in a first light line (106) that guides light transmitted along a waveguide (105) to a light output structure (180) and can distribute a portion of the light passing through the first light line (106) to a first Mach-Zehnder interferometer (151). For example, the first directional coupler (141) can divert a portion (e.g., about 5%, 10%, or 20%) of the total amount of light of a predetermined wavelength (e.g., minimum wavelength of a wavelength band of about 2000 to 2100 nm) transmitted along the first light line (106) to monitor the light intensity and wavelength of the first laser diode (111) and transmit it to the first Mach-Zehnder interferometer (151). The first directional coupler (141) may include a portion (106a) of the first light line (106) and a portion (107c) of the second light line (107a) positioned adjacent to the portion (106a) of the first light line (106).

[0128] According to one embodiment, the first directional coupler (141) may be configured to have a minimal coupling length and a cross-over length (L1). Here, the minimal coupling length is the shortest length at which the optical signals can be sufficiently coupled, and may be the length at the point where mutual coupling between the first optical line (106) and the second optical line (107a) begins. If the minimal coupling length is too short, the coupling may be incomplete and the quality of the output signal may be reduced, and if it is too long, unnecessary loss may occur. The cross-over length (L1) is the length at the point where the first optical line (106) and the second optical line (107a) begin to operate independently without affecting each other, and may be the length corresponding to a section formed in the shape of a curve that is convex from a part (107c) of the second optical line (107a) toward a part (106a) of the first optical line (106).

[0129] According to one embodiment, the first directional coupler (141) may include a section in which a portion (107c) of the second light line is bent in an approximately S shape, as shown in FIG. 13, so as to have an appropriate minimum coupling length and a cross length. For example, the length of the section in the S-shaped shape may be about 40 μm. In this case, the amount of light distributed by the first directional coupler (141) and transmitted along the first light line (106) may be about 89.36%, and the distributed amount of light transmitted to the second light line (107a) may be about 8.96%. The light transmitted along the second light line (107a) may be used to measure wavelength through the first Mach-Zehnder interferometer (151) and to measure light intensity through the light output element (161).

[0130] FIG. 14 is a graph showing an example in which the wavelength of a light source according to one embodiment of the present disclosure changes according to temperature and current amount. In FIG. 14, the x-axis represents the amount of current (mA) applied to the first laser diode (111), and the y-axis represents a portion of the wavelength (nm) of the light source.

[0131] Referring to FIG. 14, the wavelength of the first laser diode (111) can change depending on the external temperature and / or internal temperature and the amount of current injected. Referring to FIG. 15, when a predetermined amount of current (e.g., about 40 mA) is injected into the first laser diode (111), the wavelength can change to about 2273 nm when the temperature is about 20°, about 2275 nm when the temperature is about 30°, about 2278 nm when the temperature is about 40°, and about 2280 nm when the temperature is about 50°. In this way, as the external temperature and / or internal temperature increases, the light intensity of the first laser diode (111) can decrease as the wavelength changes in the direction of the longer wavelength.

[0132] FIG. 15 is a drawing showing a Mach-Zehnder interferometer formed on a substrate of an optical sensor according to one embodiment of the present disclosure.

[0133] FIG. 16 is a drawing showing parts E1 and E2 shown in FIG. 15, which are part of a Mach-Zehnder interferometer formed on a substrate of an optical sensor according to one embodiment of the present disclosure.

[0134] Referring to FIG. 15, a first Mach-Zehnder interferometer (151) according to one embodiment can be designed through the following process to have thermal insensitivity to minimize or improve the rate of change of wavelength according to temperature change in a defined wavelength band (e.g., about 2000 nm-2400 nm) when the amount of current injected into the first laser diode (111) is constant.

[0135] For example, when the first Mach-Zehnder interferometer (151) is fabricated with Si3N4, the thermo-optic coefficient of the material (e.g., Si3N4) is investigated, and the thermo-optic coefficient of the material (e.g., Si3N4) in the wavelength band of about 2000 nm to 2400 nm is estimated.

[0136] Through mode simulation, dλ / dT (amount of change in the oscillating center wavelength according to temperature) of the first Mach-Zehnder interferometer (151) can be obtained. Through the obtained dλ / dT, dispersion characteristics that may appear in the light paths included in the first Mach-Zehnder interferometer (151) (e.g., the first path (151a) and the second path (151b) of FIG. 15) are predicted.

[0137] Through a simulation program (e.g., MATLAB), conditions can be obtained in which the dλ / dT of the first path (151a) and the second path (151b) of the first Mach-Zehnder interferometer (151) can be canceled out. In this case, the first Mach-Zehnder interferometer (151) can be designed by comprehensively considering process or performance factors other than dλ / dT, such as process tolerance, optical loss, device size, and interference order (m). Through this, the width (W11) of the first part (151a-1) of the first path (151a) of the first Mach-Zenther interferometer (151), the length (L11) of the first part (151a-1), and the length (L12) of the second part (151a-2) (e.g., 0.5 times L11), and the width (W21) of the third part (151b-1) of the second path (151b), the length (L21) of the third part (151b-1), and the length (L22) of the fourth part (151b-2) can be set.

[0138] Referring to FIG. 16, when the first Mach-Zehnder interferometer (151) is designed in the manner described in FIG. 15, the width (W21) of the third part (151b-1) and the width of the fourth part (151b-2) of the second path (151b) may differ from each other. For example, the width (W21) of the third part (151b-1) may be about 0.75 μm, and the width (W22) of the fourth part (151b-2) may be about 1.8 μm. In this case, as shown in section E1 of FIG. 16, the section (151b-3) connecting the third section (151b-1) and the fourth section (151b-2) of the second path (151b) may have a roughly tapered shape, thereby gradually reducing the light mode size and converting it to substantially match the mode of the fourth section (151b-2) of the second path (151b), thereby reducing light energy loss and improving optical coupling. Similarly, as shown in section E2 of FIG. 16, the section (151b-4) connecting the fourth section (151b-2) and the third section (151b-1) of the second path (151b) may have a roughly tapered shape.

[0139] For example, if the first Mach-Zehnder interferometer (151) is designed in the manner described in FIG. 15, the width (W11) of the first part (151a-1) of the first path (151a) and the width (W12) of the second part (151a-2) may be different from each other.

[0140] According to one embodiment, the first Mach-Zehnder interferometer (151) can separate light transmitted through the second light line (107a) into two paths, for example, a first path (151a) and a second path (151b), and then recombine them. In this case, an interference pattern (e.g., a bright and dark pattern) may be formed due to the phase difference between the first path (151a) and the second path (151b). The processor (11) can more precisely measure the wavelength of the light source by analyzing the periodicity of the interference pattern shown by the first Mach-Zehnder interferometer (151).

[0141] FIG. 17 is a graph showing a spectrum at different temperatures measured through a Mach-Zehnder interferometer formed on a substrate of an optical sensor according to one embodiment of the present disclosure.

[0142] Figure 18 is a graph showing the spectrum at different temperatures measured using a Mach-Zehnder interferometer.

[0143] In Figures 17 and 18, the x-axis represents the intensity of light emitted from a light source, and the unit of light intensity (arbitrary unit, AU) is a relative unit used when measuring light intensity, which can be used to represent relative values ​​in specific experiments or measurements instead of absolute physical quantities (e.g., watts or lumens). In Figures 17 and 18, the y-axis represents the wavelength (μm) of the light source.

[0144] Referring to FIG. 17, when the first Mach-Zehnder interferometer (151) according to one embodiment is designed to have the configuration described with reference to FIG. 16, a result can be obtained where dλ / dT is close to 0 in a defined temperature range (e.g., about 250K to 350K). As such, the first Mach-Zehnder interferometer (151) can measure a more accurate wavelength (or fixed wavelength) because the wavelength does not substantially change even when the temperature increases within a specific temperature range.

[0145] It can be seen that a Mach-Zehnder interferometer not designed to have the configuration described with reference to Fig. 16 shows that the wavelength changes with temperature (e.g., about 250K, about 300K, about 400K) when referenced to a constant light intensity (AU) as shown in Fig. 18. That is, in a Mach-Zehnder interferometer, dλ / dT may not coincide with 0.

[0146] FIG. 19 is a drawing showing a light detection element of an optical sensor according to one embodiment of the present disclosure.

[0147] FIG. 20 is a cross-sectional view taken along the line G-G' shown in FIG. 19, which is a diagram showing a light detection element of an optical sensor according to one embodiment of the present disclosure.

[0148] Referring to FIGS. 19 and 20, a first photodetector (161) according to one embodiment may be a single photodiode having a first active area (161a), a second active area (161b), a third active area (161c, see FIG. 6), and a fourth active area (161d, see FIG. 6) arranged therein, capable of detecting light. A second photodetector (162), a third photodetector (163), and a fourth photodetector (164) may have substantially the same structure as the first photodetector (161). For example, the first photodetector (161) is not limited to a single photodiode but may include a plurality (e.g., four) of photodiodes. A second photodetector (162), a third photodetector (163), and a fourth photodetector (164) may also each include a plurality of photodiodes, as in the first photodetector (161).

[0149] According to one embodiment, the first light detection element (161) may be placed on the upper surface of the substrate (101). For example, the light detection element (161) may be placed on the substrate (101) at a position that does not correspond to the front (111-1) and rear (111-2) of the first laser diode (111). The positions of the second light detection element (162), the third light detection element (163), and the fourth light detection element (164), respectively, may be placed on the substrate (101) at a position that does not correspond to the front and rear of the second, third, and fourth laser diodes (112, 113, 114), similar to the first light detection element (161).

[0150] According to one embodiment, the substrate (101) may include a first grating coupler (181a), a second grating coupler (181b), a third grating coupler (181c, see FIG. 6) and a fourth grating coupler (181d, see FIG. 6) to improve the signal-to-noise ratio (SNR) of light detected in the first, second, third, and fourth active regions (161a, 161b, 161c, 161d) of the first light detection element (161) and to improve the measurement accuracy of light intensity. For example, the first, second, third, and fourth grating couplers (181a, 181b, 181c, 181d) may be positioned at a location corresponding to the direct underside of the first, second, third, and fourth active regions (161a, 161b, 161c, 161d) of the first photodetector element (161). In this case, the light emission angle of the first, second, third, and fourth grating couplers (181a, 181b, 181c, 181d) may be approximately 90 degrees with respect to the bottom surface of the first, second, third, and fourth active regions (161a, 161b, 161c, 161d).

[0151] For example, the first grating coupler (181a) has a minimum wavelength among the wavelength bands of the first laser diode (111) and can emit light transmitted through the first directional coupler (141) toward the first active region (161a) of the first photodetector (161). The second grating coupler (181b) has a minimum wavelength among the wavelength bands of the first laser diode (111) and can emit light transmitted through the first Mach-Zehnder interferometer (151) toward the second active region (161b) of the first photodetector (161). In this case, the light incident on the first active region (161a) of the first light detection element (161) is a light signal distributed at a ratio of about 90% by the first directional coupler (141), and the light incident on the second active region (161b) of the first light detection element (161) may be a light signal distributed at a ratio of about 10% by the first directional coupler (141). The first photodetector (161) can convert optical signals incident on the first active region (161a) and the second active region (161b), respectively, into electrical signals (e.g., high signal (about 90%) and low signal (about 10%). The processor (11) can improve the signal-to-noise ratio through a complementary combination of asymmetric electrical signals received from the first photodetector (161). For example, the processor (11) can detect useful signal components in the high signal, identify noise patterns through the low signal, and remove at least some common-mode noise through differential amplification, and improve the signal-to-noise ratio by analyzing changes in the relative ratio of the two signals to increase sensitivity to wavelength fluctuations. Accordingly, the processor (11) can improve the measurement accuracy of the intensity of light (e.g., light of minimum wavelength) emitted from the first laser diode through the first photodetector (161).

[0152] According to one embodiment, the fifth grating coupler (182a) has a maximum wavelength in the wavelength band of the first laser diode (111) and can emit light transmitted through the second directional coupler (142, see FIG. 6) toward the first active region (162a) of the second photodetector (162). The sixth grating coupler (182b) has a maximum wavelength in the wavelength band of the first laser diode (111) and can emit light transmitted through the second Mach-Zehnder interferometer (152, see FIG. 6) toward the second active region (162b) of the second photodetector (162). The processor (11) can improve the signal-to-noise ratio through a complementary combination of asymmetric electrical signals received from the second photodetector (162). Accordingly, the processor (11) can improve the measurement accuracy of the intensity of light emitted from the first laser diode (e.g., light of maximum wavelength) through the second light detection element (162).

[0153] FIG. 21 is a diagram showing a thermal optical phase shifter of an optical sensor according to one embodiment of the present disclosure.

[0154] Referring to FIG. 21, an optical sensor (100) according to one embodiment may include a thermal optical phase modulator (170) for controlling the output of light emitted to an inspection target (20) by being placed on a first light line (106). For example, the thermal optical phase modulator (170) may be placed at a position adjacent to each of a plurality of light output structures (180) on a plurality of first light lines (106) (see position indicated in FIG. 6). A processor (11) may control the thermal optical phase modulator (170) to modulate the light emitted from the first, second, third, and fourth laser diodes (111, 112, 113, 114).

[0155] In a thermal optical phase modulator (170) according to one embodiment, the input terminal (191) and the output terminal (192) can each be used as multi-mode interference (MMI). Two paths (193, 194) through which light is split may be arranged between the input terminal (191) and the output terminal (192). For example, when current is input to the input terminal (191) of the thermal optical phase modulator (170), heat is generated in the two paths (193, 194) containing metallic components, and the refractive index in the two paths (193, 194) may change. Through this, the thermal optical phase modulator (170) can operate as an optical switch that switches the input light to a desired output port or selectively controls a specific wavelength.

[0156] According to one embodiment, optical signals emitted from a plurality of optical output structures (180) can be converted into electrical signals through a photodiode (300, see FIG. 2). In this case, the electronic device (10) can improve signal quality by filtering amplitude and phase using a lock-in amplifier of a specific frequency band.

[0157] FIG. 22 is a drawing showing a plurality of optical output structures included in a substrate according to one embodiment of the present disclosure.

[0158] Referring to FIG. 22, a plurality of optical output structures (180) may include a multi-grid coupler structure. In this case, the multi-grid coupler may be arranged within a defined diameter (D) so as to be optimized for individual wavelengths to be used in a defined wavelength band (approx. 2000 nm to 2400 nm). For example, when the plurality of optical output structures (180) are composed of 36 channels, the diameter (D) of the circle forming the trajectory of the arrangement of the plurality of optical output structures (180) is approximately 2.52 mm, and the light emission angle may be set to approximately 51.5 degrees with respect to the vertical line from the center of the circle to the inspection target (20).

[0159] According to one embodiment, when non-invasively measuring the components of a test target (20), the processor (11) can control the driving of the first laser diode (111) so that the first, second, third, and fourth laser diodes (111, 112, 113, 114) emit at least one light sequentially or in an even or odd number of times toward the test target (20). In this case, when the first, second, third, and fourth laser diodes (111, 112, 113, 114) emit light simultaneously, the rise in external temperature caused by light emitted from adjacent laser diodes can be improved. Accordingly, the degradation of the light output of the first, second, third, and fourth laser diodes (111, 112, 113, 114) can be improved.

[0160] According to one embodiment, the processor (11) can reduce or improve errors in the blood glucose absorption rate due to noise and / or wavelength change by monitoring the rate of change of wavelengths of light emitted from the first, second, third, and fourth laser diodes (111, 112, 113, 114) in real time through a plurality of Mach-Zehnder interferometers (151, 152, 153, 154, 155, 156, 157, 158) and monitoring the light output in real time through a plurality of light detection elements (161, 162, 163, 164).

[0161] According to one embodiment, the optical sensor (100) is equipped with a plurality of laser diodes (111, 112, 113, 114) capable of covering a plurality of different wavelengths on a single chip, thereby simplifying the structure to improve manufacturing yield and reduce manufacturing costs. The optical sensor (110) can improve measurement performance by improving measurement accuracy and reducing the signal-to-noise ratio.

[0162] Although the embodiments have been described above with reference to limited embodiments and drawings, those skilled in the art can make various modifications and variations from the description above. For example, appropriate results may be achieved even if the described techniques are performed in a different order than described, and / or if the components of the described system, structure, device, circuit, etc. are combined or assembled in a form different from described, or replaced or substituted by other components or equivalents. Therefore, other implementations, other embodiments, and equivalents to the claims below also fall within the scope of the claims.

[0163] Although the present disclosure has been illustrated and described with reference to various embodiments, those skilled in the art will understand that various changes in form and detail are possible without departing from the spirit and scope of the present disclosure as defined by the appended claims and equivalents.

Claims

1. In an optical sensor for detecting biosignals, A substrate including a groove; A laser diode inserted into the above groove and comprising an active layer and a plurality of lights of different wavelengths emitted from a plurality of light-emitting points of the active layer; A plurality of waveguides disposed inside the substrate and configured to guide a plurality of lights emitted from the active layer of the laser diode; A plurality of first light lines disposed inside the substrate, having one end connected to the plurality of waveguides and the other end connected to the plurality of light output structures, and transmitting the plurality of lights guided along the plurality of waveguides to the plurality of light output structures; Second light lines disposed inside the substrate and branched from one of the plurality of first light lines; and A light detection element disposed on the substrate and detecting light transmitted along the second light lines; comprising The above laser diode is, An optical sensor configured to be inserted into the grooves such that the heights of the plurality of light-emitting points of the active layer are respectively aligned with the heights of the plurality of optical waveguides.

2. In Paragraph 1, The above-mentioned plurality of optical output structures are, An optical sensor arranged to be gathered in a defined area of ​​the above substrate.

3. In Paragraph 2, It further includes a lens spaced apart from the above substrate, and The above lens is an optical sensor configured to correspond to a defined area of ​​the substrate.

4. In Paragraph 1, In the grooves of the above substrate, An optical sensor comprising a support member that supports the laser diode such that the heights of a plurality of light-emitting points of the active layer and the heights of the plurality of optical waveguides are aligned, respectively.

5. In Paragraph 4, The above support member is, It includes a first stopper and a second stopper that are spaced apart from each other and support the lower surface of the laser diode; An optical sensor configured such that the top height of the first stopper is the same as the top height of the second stopper.

6. In Paragraph 5, The above substrate is, It includes a plurality of first pads disposed between the first stopper and the second stopper and each electrically connected to a plurality of first electrodes disposed on the lower surface of the laser diode. A plurality of first electrodes of the laser diode and a plurality of first pads of the substrate are joined by solder, and An optical sensor configured such that the sum of the thickness of the first electrode of the laser diode, the thickness of a plurality of first pads of the substrate, and the thickness of the solder corresponds to the gap between the lower surface of the laser diode on which the first electrode is placed and the bottom surface of the substrate.

7. In Paragraph 6, The above laser diode is, First semiconductor layer; Second semiconductor layer; The active layer located between the first semiconductor layer and the second semiconductor layer; A passivation layer covering the second semiconductor layer; and An optical sensor comprising: a metal layer covering the passivation layer, connected to a portion of the second semiconductor layer, and connected to a plurality of first electrodes of the laser diode.

8. In Paragraph 1, An optical sensor configured such that the center of each of the plurality of waveguides and the center of the plurality of light-emitting points of the active layer are located on the same plane.

9. In Paragraph 1, The front surface of the above laser diode is, An optical sensor configured with a space formed such that the light incident surface of the substrate facing the front surface of the laser diode is spaced apart by a predetermined distance.

10. In Paragraph 9, Each of the above plurality of waveguides is, A first portion adjacent to the light incidence surface; and A second part positioned further from the light incidence surface than the first part; comprising The first part of each of the above plurality of waveguides is, An optical sensor that is spaced apart from the light incident surface of the substrate in a direction away from the front surface of the laser diode, and the first portion has an inverse taper shape in which the width gradually increases from the light incident surface side of the substrate to the second portion side.

11. In Paragraph 6, In the space between the laser diode and the substrate, An optical sensor configured to have an epoxy layer disposed thereon that diffusely reflects light reflected from the light incident surface of the substrate and limits it from being incident on the front surface of the laser diode.

12. In Paragraph 4, The above laser diode is, It includes a plurality of laser diodes that emit light of different wavelength bands, and The above support member is, An optical sensor further comprising a plurality of additional support members on which the plurality of laser diodes are mounted.

13. In Paragraph 1, The above substrate is, A directional coupler that distributes light transmitted along the second optical line at a predetermined ratio; A Mach-Zehnder interferometer that controls optical output using the interference effect generated when light transmitted along the second optical line and light distributed by the directional coupler are combined; and An optical sensor comprising a first grating coupler disposed below the light detection element and guiding light that has passed through the Mach-Zehnder interferometer and emitting it toward the light detection element.

14. In Paragraph 1, Each of the above plurality of optical output structures is, It includes a second grid coupler, It further includes a plurality of thermal optical phase shifters disposed on the plurality of first optical lines, and An optical sensor configured such that the plurality of thermal optical phase modulators thermally control light transmitted to the plurality of optical output structures to change the intensity of light emitted from the plurality of optical output structures.

15. In electronic devices, Housing comprising a light-transmitting material; An optical sensor disposed on the inner side of the housing and emitting light toward a test object on the outer side of the housing; An optical interface that directs light emitted from the above optical sensor onto a test object; A photodiode that detects light reflected from the above-mentioned test object; The above optical sensor is, A laser diode comprising an active layer that emits light of different wavelengths in a defined wavelength band; A substrate comprising a groove into which the laser diode is inserted, a plurality of waveguides each guiding light emitted from the front surface of the laser diode, a plurality of first light lines each connected to the plurality of waveguides and guiding light transmitted along the plurality of waveguides to a plurality of light output structures, and a second light line branched from at least one of the plurality of first light lines; A light detection element disposed on the substrate and detecting light transmitted along the first light line and light transmitted along the second light line; A Mach-Zehnder interferometer disposed in the second optical line and the light detection element, and measuring the intensity of light transmitted along the second optical line and a predetermined wavelength; and It includes a thermal optical phase shifter configured to change the intensity of light emitted from the output by thermally controlling light that is disposed on the first optical line and transmitted to the output section. The above substrate is, An electronic device comprising a support on which the laser diode is seated so as to align the height of the active layer of the laser diode with the height of the plurality of waveguides.

Images