Remote plasma reactor for semiconductor manufacturing facility

Abstract

The present invention provides a remote plasma reactor for a semiconductor manufacturing facility, the reactor comprising: a plasma reaction chamber providing a ring-shaped plasma reaction space in which a plasma reaction occurs; and a magnetic core unit coupled to the plasma reaction chamber to surround at least a partial section of the plasma reaction space. Source gases that have passed through a gas inlet are sprayed in a direction away from the center of the plasma reaction space so that the source gases form vortexes in the plasma reaction space.

Description

Remote plasma reactor for semiconductor manufacturing equipment

[0001] The present invention relates to a plasma generating device, and more specifically, to an inductively coupled plasma generating device used for gas treatment.

[0002] Semiconductor devices are manufactured by repeatedly performing processes such as photolithography, etching, diffusion, and metal deposition on a wafer in a semiconductor process chamber using various process gases. After the process is completed in the semiconductor process chamber, residual gas remains in the chamber. Since the residual gas in the process chamber contains toxic components, it is discharged by a vacuum pump and purified by an exhaust gas treatment device such as a scrubber.

[0003] Recently, technology that decomposes and treats harmful components using plasma reactions is widely used. Published Patent No. 10-2019-0019651 discloses a plasma chamber that treats exhaust gas using inductively coupled plasma. Inductively coupled plasma is a method of generating plasma by utilizing an electric field created by a magnetic field that changes over time. Generally, a plasma reactor for inductively coupled plasma comprises a chamber that provides a space for plasma generation, a ferrite core coupled to surround the chamber, an antenna coil wound around the ferrite core, and an igniter for initial plasma ignition. When radio frequency power is applied to the antenna coil, a magnetic field is induced by the time-varying current flowing through the antenna coil. Consequently, an electric field is generated inside the chamber, thereby generating inductively coupled plasma.

[0004] The objective of the present invention is to provide an inductively coupled plasma generator for gas treatment having a structure capable of increasing the gas decomposition rate.

[0005] To achieve the above-described objective of the present invention, according to one aspect of the present invention, a remote plasma reactor for generating reaction-active species by decomposing a source gas using inductively coupled plasma for gas treatment in a semiconductor manufacturing facility comprises: a plasma reaction chamber providing a ring-shaped plasma reaction space in which a plasma reaction occurs; and includes a magnetic core portion coupled to the plasma reaction chamber to surround at least a portion of the plasma reaction space, wherein the plasma reaction chamber comprises a gas inlet unit having a gas inlet through which a source gas is introduced into the plasma reaction space and a gas introduction passage extending from the gas inlet, a gas outlet unit spaced apart from the gas inlet unit and having a gas outlet through which gas is discharged from the plasma reaction space, and a first connecting block and a second connecting block arranged in parallel between the gas inlet unit and the gas outlet unit to respectively connect the gas inlet unit and the gas outlet unit, wherein the gas inlet unit provides an inlet reaction passage extending along the transverse direction inside and forming a portion of the plasma reaction space, and the gas outlet unit provides an outlet reaction passage inside that forms a portion of the plasma reaction space, the first connecting block provides a first connecting reaction passage forming a portion of the plasma reaction space, and the second connecting block provides a second connecting reaction passage forming a portion of the plasma reaction space, and the gas The inlet side unit comprises a first gas inlet side block and a second gas inlet side block positioned above the first gas inlet side block, wherein the first gas inlet side block has a first inlet side groove formed opposite to the second gas inlet side block and forming the lower part of the inlet side reaction passage.A remote plasma reactor for semiconductor manufacturing equipment is provided, wherein the second gas inlet side block has a second inlet side groove formed opposite to the first gas inlet side block and forming the upper part of the inlet side reaction passage, the inlet side reaction passage has a round cross-sectional shape and communicates with the gas introduction passage through the gas inlet, and the gas introduction passage is extended such that the injection direction of the source gas from the gas inlet does not face the center of the cross-sectional shape of the inlet side reaction passage.

[0006] According to the present invention, all the objectives of the present invention described above can be achieved. Specifically, due to the position of the gas inlet according to the present invention, the source gas flowing into the ring-shaped plasma reaction space through the gas inlet forms a vortex in the plasma reaction space, thereby increasing the plasma reaction time and increasing the gas decomposition rate.

[0007] FIG. 1 is a block diagram schematically illustrating an example of a semiconductor manufacturing facility in which a remote plasma reactor according to one embodiment of the present invention is used.

[0008] FIG. 2 is a block diagram schematically illustrating another example of a semiconductor manufacturing facility in which a remote plasma reactor according to one embodiment of the present invention is used.

[0009] FIG. 3 is a perspective view of a remote plasma reactor according to one embodiment of the present invention.

[0010] FIG. 4 is a perspective view of a plasma reaction chamber and a gas injector equipped in a remote plasma reactor shown in FIG. 3.

[0011] Figure 5 is a cross-sectional view along line A-A' of the plasma reaction chamber and gas injector shown in Figure 4.

[0012] Figure 6 is a cross-sectional view along line B-B' of the plasma reaction chamber and gas injector shown in Figure 4.

[0013] Hereinafter, the configuration and operation of an embodiment of the present invention will be described in detail with reference to the drawings.

[0014] FIG. 1 illustrates, as a block diagram, an example of a semiconductor manufacturing facility in which a remote plasma reactor according to one embodiment of the present invention is used. Referring to FIG. 1, the semiconductor manufacturing facility (10) includes a semiconductor manufacturing equipment (11) in which a semiconductor manufacturing process for manufacturing a semiconductor device is performed, an exhaust gas treatment equipment (13) for treating gas discharged from the semiconductor manufacturing equipment (11), an exhaust equipment (15) for discharging gas from the semiconductor manufacturing equipment (11) and flowing it to the exhaust gas treatment equipment (13), a remote plasma reactor (100) according to one embodiment of the present invention that generates plasma to produce a reaction active species, a power source (190) that supplies power to the remote plasma reactor (100), a gas supply unit (195) that supplies source gas to the remote plasma reactor (100), and a mixing chamber (199) that mixes the reaction active species generated in the remote plasma reactor (100) with the exhaust gas discharged from the semiconductor manufacturing equipment (11).

[0015] The semiconductor manufacturing equipment (11) manufactures semiconductor devices by performing a semiconductor manufacturing process using various process gases. The semiconductor manufacturing equipment (11) is equipped with a semiconductor process chamber (12) in which a semiconductor manufacturing process using various process gases is performed. Although not illustrated, the semiconductor manufacturing equipment (11) further includes a process gas supply unit that supplies various types of process gases required for the semiconductor process chamber (12).

[0016] The semiconductor process chamber (12) includes all types of semiconductor process chambers commonly used in the field of semiconductor manufacturing equipment technology to manufacture semiconductor devices. Residual gas generated in the semiconductor process chamber (12) is discharged to the outside as exhaust gas by exhaust equipment (15) and purified by exhaust gas treatment equipment (13).

[0017] The exhaust gas treatment equipment (13) treats and purifies harmful components contained in the exhaust gas discharged from the semiconductor process chamber (12) by the exhaust equipment (15). The exhaust gas treatment equipment (13) includes a scrubber (14) for treating exhaust gas. The scrubber (14) includes all types of scrubbers commonly used to treat exhaust gas in the field of semiconductor manufacturing equipment technology.

[0018] The exhaust equipment (15) discharges residual gas generated after the process in the semiconductor process chamber (12) as exhaust gas from the semiconductor process chamber (12). The exhaust equipment (15) is equipped with a vacuum pump (16), a chamber exhaust pipe (17) connecting the semiconductor process chamber (13) and the vacuum pump (16), and a pump exhaust pipe (18) extending downstream from the vacuum pump (16).

[0019] The vacuum pump (16) forms negative pressure on the side of the semiconductor process chamber (12) through a chamber exhaust pipe (17) connecting the semiconductor process chamber (12) and the vacuum pump (16) in order to discharge residual gas of the semiconductor process chamber (12) as exhaust gas. Since the vacuum pump (16) includes the configuration of a vacuum pump commonly used in the field of semiconductor manufacturing equipment technology, a detailed description thereof is omitted. Depositable by-products generated by the process performed in the semiconductor process chamber (12) may be deposited on the vacuum pump (16), thereby degrading the performance of the vacuum pump (16). According to the present invention, the generation of depositable by-products contained in the exhaust gas is suppressed by the remote plasma reactor (100), and by-products deposited on the vacuum pump (16) are removed, thereby extending the MTBF of the vacuum pump (16).

[0020] The chamber exhaust pipe (17) connects the exhaust port of the semiconductor process chamber (12) and the intake port of the vacuum pump (16) between the semiconductor process chamber (12) and the vacuum pump (16). Due to the negative pressure formed by the vacuum pump (16), residual gas from the semiconductor process chamber (12) is discharged as exhaust gas through the chamber exhaust pipe (17). A mixing chamber (199) is installed in the chamber exhaust pipe (17) to mix the exhaust gas with a reaction active species supplied from the remote plasma reactor (100).

[0021] The pump exhaust pipe (18) extends downstream from the vacuum pump (16). The pump exhaust pipe (18) is connected to the discharge port of the vacuum pump (16) so that exhaust gas discharged from the vacuum pump (16) flows through it. A scrubber (14) is connected to the downstream end of the pump exhaust pipe (18) so that exhaust gas discharged from the vacuum pump (16) flows into the scrubber (14) through the pump exhaust pipe (18).

[0022] A remote plasma reactor (100) according to one embodiment of the present invention operates by power supplied from a power source (190) to generate inductively coupled plasma, and uses the inductively coupled plasma to cause a plasma reaction to decompose the gas supplied from a gas supply unit (195) and generate reactive species. The reactive species generated in the remote plasma reactor (100) are supplied to a mixing chamber (199) through a gas discharge pipe (197) to treat harmful components contained in the exhaust gas discharged from a semiconductor process chamber (12). The specific configuration of the remote plasma reactor (100) will be described in detail later.

[0023] The power source (190) supplies power to the remote plasma reactor (100).

[0024] The gas supply unit (195) stores the source gas of the reaction active species generated by the plasma reaction in the remote plasma reactor (100) and supplies the stored source gas to the remote plasma reactor (100) through the gas inlet pipe (196). In this embodiment, the gas supply unit (195) is described as supplying nitrogen trifluoride (NF3) to the remote plasma reactor (100) as the source gas of the reaction active species.

[0025] A mixing chamber (199) is installed on a chamber exhaust pipe (17) to mix the reaction active species generated in a remote plasma reactor (100) with the exhaust gas discharged from a semiconductor process chamber (12).

[0026] In the semiconductor manufacturing facility (10) illustrated in FIG. 1, the reaction active species generated by the remote plasma reactor (100) is supplied to the mixing chamber (199), but alternatively, the reaction active species generated by the remote plasma reactor (100) may be supplied directly to the chamber exhaust pipe (17). Additionally, as in the semiconductor manufacturing facility (20) illustrated in FIG. 2, the reaction active species generated in the remote plasma reactor (100) may be supplied to the semiconductor process chamber (12) through the gas supply pipe (197) and used for cleaning the semiconductor process chamber (12).

[0027] Now, a specific configuration of a remote plasma reactor (100) according to one embodiment of the present invention will be described. Referring to FIGS. 3 to 6, a remote plasma reactor (100) according to one embodiment of the present invention comprises a plasma reaction chamber (110), a gas injector (170) for injecting a plasma source gas into the plasma reaction chamber (110), and a magnetic core part (180) arranged to surround a part of the plasma reaction chamber (110).

[0028] The plasma reaction chamber (110) provides a ring-shaped plasma reaction space (112) in which a plasma reaction occurs. The plasma reaction chamber (110) comprises a gas inlet unit (120), a gas outlet unit (130) positioned spaced apart from below the gas inlet unit (120), a first connecting block (140) and a second connecting block (145) arranged in parallel between the gas inlet unit (120) and the gas outlet unit (130) to connect the gas inlet unit (120) and the gas outlet unit (130), respectively, and an igniter (160) coupled to the gas inlet unit (120).

[0029] The gas inlet side unit (120) is positioned above the gas outlet side unit (130) with the first connecting block (140) and the second connecting block (145) in between. The gas inlet side unit (120) provides an inlet side reaction passage (121) formed inside. The inlet side reaction passage (121) extends along the transverse direction to form a portion of the ring-shaped plasma reaction space (112). In this embodiment, the inlet side reaction passage (121) is described as having a circular cross-sectional shape, but it may have a round cross-sectional shape such as an ellipse, and this is also within the scope of the present invention. In the gas inlet side unit (120), an ignition opening (124) communicating with the inlet side reaction passage (121) is formed above the inlet side reaction passage (121). The ignition opening (124) is generally located in the longitudinal center of the inlet side reaction passage (121). A gas inlet (125) is formed in the gas inlet side unit (120) and is connected to the inlet side reaction passage (121). A gas introduction passage (126) extending from the gas inlet (125) is formed in the gas inlet side unit (120). Source gas injected through the gas injector (170) passes through the gas introduction passage (126) and flows into the inlet side reaction passage (121) through the gas inlet (125). In this embodiment, the gas inlet (125) is located at the longitudinal center of the inlet side reaction passage (121). Additionally, the gas inlet (125) is located below or above the center (O) of the inlet side reaction passage (121) in the cross-sectional shape of the inlet side reaction passage (121). That is, the gas inlet (125) is located in a section that widens toward the top (i.e., a section below the center (O) of the inlet reaction passage (121)) or a section that widens toward the bottom (i.e., a section above the center (O) of the inlet reaction passage (121)).The portion of the gas introduction passage (126) connected to the gas inlet (125) extends along a direction away from the center (O) of the inlet-side reaction passage (121). Accordingly, the source gas flowing into the inlet-side reaction passage (121) through the gas inlet (125) forms a strong swirl, as illustrated by the broken arrow in FIG. 6. That is, the gas introduction passage (126) is extended so that the direction of injection of the source gas from the gas inlet (125) does not face the center (O) of the transverse cross-section of the inlet-side reaction passage (121). By forming a strong swirl of the source gas flowing into the inlet-side reaction passage (121), the reaction time increases, thereby increasing the decomposition rate of the source gas. In this embodiment, the gas inlet (125) is described as being located in a section of the cross-sectional shape of the inlet-side reaction passage (121) that widens as it goes upward (i.e., a section below the center (O) of the inlet-side reaction passage (121)). The gas introduction passage (126) extends along a direction generally perpendicular to the longitudinal direction of the inlet side reaction passage (121). In this embodiment, the gas introduction passage (126) extends generally horizontally in the section connected to the gas inlet (125). At the bottom of the gas inlet side unit (120), a first inlet side passage opening (122) and a second inlet side passage opening (123) are formed, respectively, in communication with both ends of the inlet side reaction passage (121). The first inlet side passage opening (122) and the second inlet side passage opening (123) are located opposite the ignition opening (124) and face the gas outlet side unit (130). A gas injector (170) is coupled to the gas inlet side unit (120). The gas inlet side unit (120) has a first gas inlet side block (120a) and a second gas inlet side block (120b) arranged in a stacked structure.

[0030] The first gas inlet side block (120a) is located below the second gas inlet side block (120b) and is located closer to the gas outlet side unit (130) than the second gas inlet side block (120b). The first gas inlet side block (120a) is combined with the second gas inlet side block (120b) to form the gas inlet side unit (120). Both the first inlet side passage opening (122) and the second inlet side passage opening (123) are located in the first gas inlet side block (120a). A first inlet side groove (121a) is formed in the first gas inlet side block (120a), which is open toward the second gas inlet side block (120b) and communicates with both the first inlet side passage opening (122) and the second inlet side passage opening (123). The first inlet groove (121a) generally extends in a straight line along the transverse direction and has a round cross-sectional shape that widens as it goes upward from the bottom. In this embodiment, the first inlet groove (121a) has a semicircular cross-sectional shape that forms the lower half of the inlet reaction passage (121) having a circular cross-sectional shape. A gas inlet (125) is located in the first inlet groove (121a). A gas inlet passage (126) is formed in the first gas inlet block (120a). The present invention is characterized by the fact that the source gas flowing into the inlet reaction passage (121) through the gas inlet (125) forms a vortex, thereby increasing the reaction time and increasing the decomposition rate of the source gas. To form a vortex, it is preferable for the gas inlet (125) to be located at a height below the middle of the first inlet groove (121a), and it may be most preferable for it to be located in contact with the bottom of the first inlet groove (121a). That is, the gas inlet passage (126) may be formed to extend along the tangent of the bottom of the first inlet-side groove (121a). It is preferable that the gas inlet passage (126) extend parallel to the tangential direction of the bottom of the first inlet-side groove (121a).

[0031] The second gas inlet side block (120b) is positioned above the first gas inlet side block (120a) and is located further from the gas outlet side unit (130) than the first gas inlet side block (120a). The second gas inlet side block (120b) is combined with the first gas inlet side block (120a) to form a gas inlet side unit (120). An ignition opening (124) is located at the top of the second gas inlet side block (120b). An igniter (160) is coupled to the second gas inlet side block (120b) in correspondence with the ignition opening (124). A second inlet side groove (121b) is formed in the second gas inlet side block (120b) and opens toward the first gas inlet side block (120a). The second inlet groove (121b) generally extends in a straight line along the transverse direction and has a round cross-sectional shape that widens as it moves away from the top bottom (towards the bottom). In this embodiment, the second inlet groove (121b) has a semicircular cross-sectional shape that forms the upper half of the inlet reaction passage (121) having a circular cross-sectional shape. The second inlet groove (121b) forms the inlet reaction passage (121) together with the first gas inlet groove (121a) formed in the first gas inlet block (120a). In this embodiment, the gas inlet (125) is described as being located in the first gas inlet groove (121a), but it may be located in the second inlet groove (121b) otherwise, and this is also within the scope of the present invention. In this case, it is advantageous for the gas inlet to be located adjacent to the top bottom of the second inlet groove (121b) to form a strong vortex. When a gas inlet (125) is formed in the second inlet side groove (121b), a gas inlet passage (126) is formed in the second gas inlet side block (120a) in correspondence.

[0032] The gas outlet side unit (130) is located below the gas inlet side unit (120) and spaced apart from the gas inlet side unit (120). Between the gas outlet side unit (130) and the gas inlet side unit (120), a first connecting block (140) and a second connecting block (145) are arranged in parallel. The gas outlet side unit (130) provides an outlet side reaction passage (131) formed inside. The outlet side reaction passage (131) extends along the transverse direction to form a portion of the ring-shaped plasma reaction space (112). At the top of the gas outlet side unit (130), a first outlet side passage opening (132) and a second outlet side passage opening (133) are formed, respectively, in communication with both ends of the outlet side reaction passage (131). The first outflow side passage opening (132) and the second outflow side passage opening (133) face the gas inflow side unit (120). A gas outlet (135) is formed in the gas outflow side unit (130) and communicates with the outflow side reaction passage (131). In this embodiment, the gas outlet (135) is located at the longitudinal center of the outflow side reaction passage (131). The gas outlet (135) is formed at the bottom of the gas outflow unit (130) and is located opposite the first outflow side passage opening (132) and the second outflow side passage opening (133). Gas containing reaction active species is discharged through the gas outlet (135) and can be supplied to the mixing chamber (199) as shown in FIG. 1 or to the semiconductor process chamber (12) as shown in FIG. 2 through the gas discharge pipe (197 in FIG. 1 and FIG. 2). The gas outflow side unit (130) has a first gas outflow side block (130a) and a second gas outflow side block (130b) arranged in a stacked structure.

[0033] The first gas outlet side block (130a) is positioned above the second gas outlet side block (130b) and is located closer to the gas inlet side unit (120) than the second gas outlet side block (130b). The first gas outlet side block (130a) is combined with the second gas outlet side block (130b) to form the gas outlet side unit (130). Both the first outlet side passage opening (132) and the second outlet side passage opening (133) are located in the first gas outlet side block (130a). A first outlet side groove (131a) is formed in the first gas outlet side block (130a), which is open toward the second gas outlet side block (130b) and communicates with both the first outlet side passage opening (132) and the second outlet side passage opening (133). The first outflow side groove (131a) forms part of the outflow side reaction passage (131).

[0034] The second gas outlet side block (130b) is located below the first gas outlet side block (130a) and is located further from the gas inlet side unit (120) than the first gas outlet side block (130a). The second gas outlet side block (130b) is combined with the first gas outlet side block (130a) to form a gas outlet side unit (130). A gas outlet port (135) is formed in the second gas outlet side block (130b). A second outlet side groove (131b) is formed in the second gas outlet side block (130b) and opens toward the first gas outlet side block (130a). The second outlet side groove (131b) forms part of the outlet side reaction passage (131). The second outflow side groove (131b) forms an outflow side reaction passage (131) together with the first gas outflow side groove (131a) formed in the first gas outflow side block (130a).

[0035] The first connecting block (140) and the second connecting block (145) are arranged in parallel between the gas inlet side unit (120) and the gas outlet side unit (130) to connect the gas inlet side unit (120) and the gas outlet side unit (130), respectively.

[0036] The first connecting block (140) is positioned between the gas inlet side unit (120) and the gas outlet side unit (130) to connect the gas inlet side unit (120) and the gas outlet side unit (130). Inside the first connecting block (140), a first connecting reaction passage (141) extending along the vertical direction is formed. The first connecting reaction passage (141) forms a portion of the ring-shaped plasma reaction space (112). The open upper and lower ends of the first connecting reaction passage (141) are in communication with the first inlet side passage opening (122) formed in the first gas inlet side block (120a) of the gas inlet side unit (120) and the first outlet side passage opening (132) formed in the first gas outlet side block (130a) of the gas outlet side unit (130), respectively. The first connection reaction passage (141) is surrounded by a magnetic core part (180).

[0037] The second connecting block (145) is positioned between the gas inlet side unit (120) and the gas outlet side unit (130) to connect the gas inlet side unit (120) and the gas outlet side unit (130). Inside the second connecting block (145), a second connecting reaction passage (146) extending along the vertical direction is formed. The second connecting reaction passage (146) forms a portion of the ring-shaped plasma reaction space (112). The open upper and lower ends of the second connecting reaction passage (146) are respectively connected to the second inlet side passage opening (123) formed in the first gas inlet side block (120a) of the gas inlet side unit (120) and the second outlet side passage opening (133) formed in the first gas outlet side block (130a) of the gas outlet side unit (130). The first connection reaction passage (141) is surrounded by a magnetic core part (180).

[0038] The igniter (160) is coupled to the second gas inlet side block (120b) of the gas inlet side unit (120). The igniter (160) is located on the opposite side of the first gas inlet side block (120a) with the second gas inlet side block (120b) in between. The igniter (160) is located corresponding to the ignition opening (124) formed in the gas inlet side block (120b). The igniter (160) receives high-power electricity from a power source (190 in FIG. 1 and FIG. 2) to ignite the plasma. The igniter (160) ignites the plasma through the ignition opening (124).

[0039] A gas injector (170) is coupled to a first gas inlet side block (120a) to inject plasma source gas supplied from a gas supplier (195 in FIG. 1 and 2) into a plasma reaction space (112) of a plasma reaction chamber (120) through a gas inlet (125). A gas flow path (172) through which the source gas flows is formed in the gas injector (170). The gas flow path (172) is in communication with a gas inlet passage (126) formed in the first gas inlet side block (120a).

[0040] The magnetic core section (180) is positioned to surround the first connecting reaction passage (141) and the second connecting reaction passage (146) in the ring-shaped plasma reaction space (112) formed in the plasma reaction chamber (110). The magnetic core section (180) comprises a plurality of unit magnetic cores (181) arranged in a stacked structure. In this embodiment, the unit magnetic core (181) is described as a ferrite core commonly used in inductively coupled plasma generators.

[0041] Although not illustrated, the remote plasma reactor (100) further comprises a coil wound on a magnetic core (180) and supplied with power from a power source (190 in FIG. 1 and 2). The coil (not illustrated) wound on the magnetic core (180) receives alternating current power of radio frequency through the power source (190 in FIG. 1 and 2) to form an induced magnetic flux in the magnetic core (180). An induced electric field is generated by the induced magnetic flux formed in the magnetic core (180), and plasma is formed by the generated induced electric field.

[0042] Although the present invention has been described through the above embodiments, the present invention is not limited thereto. The above embodiments may be modified or changed without departing from the spirit and scope of the present invention, and those skilled in the art will understand that such modifications and changes are also within the scope of the present invention.

Claims

1. In a remote plasma reactor that uses inductively coupled plasma to decompose a source gas for gas treatment in semiconductor manufacturing facilities to generate reaction active species, A plasma reaction chamber providing a ring-shaped plasma reaction space in which a plasma reaction occurs inside; and It includes a magnetic core portion coupled to the plasma reaction chamber to surround at least a portion of the plasma reaction space, and The plasma reaction chamber comprises a gas inlet unit having a gas inlet through which a source gas is introduced into the plasma reaction space and a gas introduction passage extending from the gas inlet, a gas outlet unit spaced apart from the gas inlet unit and having a gas outlet through which gas is discharged from the plasma reaction space, and a first connecting block and a second connecting block arranged in parallel between the gas inlet unit and the gas outlet unit to respectively connect the gas inlet unit and the gas outlet unit. The above gas inlet side unit provides an inlet side reaction passage that extends along the transverse direction internally and forms a portion of the plasma reaction space, and The above gas outlet-side unit provides an outlet-side reaction passage that forms a portion of the plasma reaction space inside, and The first connecting block above provides a first connecting reaction passage that forms a portion of the plasma reaction space, and The second connecting block above provides a second connecting reaction passage that forms a portion of the plasma reaction space, and The above gas inlet side unit comprises a first gas inlet side block and a second gas inlet side block positioned above the first gas inlet side block. In the first gas inlet side block, a first inlet side groove is formed facing the second gas inlet side block and forming the lower part of the inlet side reaction passage. In the second gas inlet side block, a second inlet side groove is formed facing the first gas inlet side block and forming the upper part of the inlet side reaction passage. The above-mentioned inlet-side reaction passage has a round cross-sectional shape and is connected to the gas introduction passage through the gas inlet, and The gas introduction passage is extended such that the injection direction of the source gas at the gas inlet is not directed toward the center of the cross-sectional shape of the inlet-side reaction passage. Remote plasma reactor for semiconductor manufacturing equipment.

2. In Claim 1, The above gas inlet is located at or below the mid-height of the above first inlet-side groove, Remote plasma reactor for semiconductor manufacturing equipment.

3. In Claim 1, The above gas inlet is located in contact with the lower end of the above first inlet-side groove, Remote plasma reactor for semiconductor manufacturing equipment.

4. In Claim 1, The above gas inlet is located at or above the middle height of the above second inlet-side groove, Remote plasma reactor for semiconductor manufacturing equipment.

5. In Claim 1, The above gas inlet is located in contact with the upper end of the above second inlet-side groove, Remote plasma reactor for semiconductor manufacturing equipment.

6. In Claim 1, The above plasma reaction chamber further comprises an igniter coupled to the upper part of the second gas inlet side block, Remote plasma reactor for semiconductor manufacturing equipment.

7. In Claim 6, An ignition opening is formed in the second gas inlet side block that communicates with the second inlet side groove, and The igniter is installed corresponding to the ignition opening, Remote plasma reactor for semiconductor manufacturing equipment.

Images