Remote plasma source

Abstract

Some implementations relate to a remote plasma system. The remote plasma system may include: a first tube; a second tube; a first isolation component coupled between a first end of the first tube and a first end of the second tube; a second isolation component coupled between a second end of the first tube and a second end of the second tube; and a first capacitor element coupled to the first isolation component.

Description

Technical Field

[0001] Embodiments of the present invention generally relate to a system and method for use in the manufacture of semiconductor devices. More specifically, embodiments of this disclosure relate to a plasma processing system for processing substrates. Background Technology

[0002] Reliably generating high aspect ratio features is one of the key technological challenges for next-generation semiconductor devices. One method for forming high aspect ratio features uses plasma-assisted etching processes, such as reactive ion etching (RIE) plasma processes, to form high aspect ratio openings in material layers (such as dielectric layers) of a substrate. In typical RIE plasma processes, plasma is generated in a processing chamber and ions from the plasma are accelerated toward the substrate surface to form openings in a material layer disposed beneath a mask layer formed on the substrate surface.

[0003] Plasma-enhanced chemical vapor deposition and etching processes are those in which electromagnetic energy is applied to at least one gas or vapor to convert it into reactive plasma. The generation of plasma can reduce the temperature required to form or etch a film or increase the rate of layer formation or etching. The plasma can be generated inside the processing chamber, i.e., in situ, or in a remote plasma generator located far from the processing chamber. Remote plasma generators offer several advantages. For example, they provide plasma capability to the deposition or etching system that minimizes the interaction between the plasma and the substrate and chamber components, thereby preventing damage to the substrate and the interior of the processing chamber.

[0004] However, conventional plasma processing systems include multiple radio frequency (RF) sources to generate and control plasma generation in different portions of the plasma processing sequence performed within the plasma processing chamber. For example, the plasma processing chamber may include: at least one RF source for forming in-situ plasma within the processing region of the plasma processing chamber to deposit a film or etch a layer formed on a substrate; and one or more remote plasma generators connected to the processing region of the processing chamber and used to perform a cleaning process that provides a cleaning gas containing free radicals to the processing region of the plasma processing chamber after the substrate has been processed within the plasma processing chamber. Due to the high cost of the RF delivery components required to generate plasma individually, using separate RF sources to generate plasma in different portions of the processing chamber and at different times can be expensive.

[0005] Remote plasma generators typically feature a protective anodized aluminum coating to protect the inner aluminum walls from degradation. However, this anodized aluminum coating is generally porous and prone to surface reactions. Consequently, the lifetime of the anodized aluminum coating is limited due to degradation in the plasma cleaning environment. Failure of the protective anodized coating on the aluminum surface leads to excessive particle generation in the downstream reactor chamber. Furthermore, the downstream reactor chamber suffers from unstable plasma performance due to changes in the surface condition of the protective anodized coating as the process continues. This results in deterioration of wafer deposition / etching rates, film uniformity, and wafer-to-wafer plasma coupling efficiency. In addition, remote plasma generators are often formed as complete systems without replaceable parts and therefore require replacement after reaching the end of their lifespan, which is often wasteful and costly.

[0006] Therefore, there is a need for an apparatus and method for processing substrates in a plasma processing system, which solves the problems described above. Summary of the Invention

[0007] The embodiments described herein typically include devices, remote plasma systems, and methods for generating plasma.

[0008] Some implementations relate to a remote plasma system. The remote plasma system may include: a first tube; a second tube; a first isolation component coupled between a first end of the first tube and a first end of the second tube; a second isolation component coupled between a second end of the first tube and a second end of the second tube; and a first capacitor element coupled to the first isolation component.

[0009] Some implementations relate to a method for remote plasma generation. The method typically includes: electrically isolating a first tube from a second tube, wherein a first capacitive element is coupled between the first and second tubes; providing an excitation signal to an excitation coil; and generating plasma within the first and second tubes based on the excitation signal. Attached Figure Description

[0010] To gain a more detailed understanding of the features described above in this disclosure, a more specific description of the disclosure, which has been briefly summarized above, can be obtained with reference to the embodiments, some of which are illustrated in the accompanying drawings. However, it will be noted that the drawings are merely illustrative and are not intended to limit the scope of the disclosure, and other equivalent embodiments are permissible.

[0011] Figure 1 This is a schematic representation of a plasma processing system.

[0012] Figure 2 A remote plasma source (RPS) according to certain aspects of this disclosure is shown.

[0013] Figure 3 The current formed in the reactor according to certain aspects of this disclosure is shown.

[0014] Figure 4 This is a process flow diagram illustrating a method for remote plasma generation according to certain embodiments of the present disclosure.

[0015] To facilitate understanding, the same reference numerals have been used where possible to identify common elements in the figures. It is anticipated that elements and features of one embodiment may be advantageously incorporated into other embodiments without further description. Detailed Implementation

[0016] Embodiments of this disclosure generally relate to a system used in semiconductor device manufacturing processes. More specifically, the embodiments provided herein typically include a remote plasma source (RPS), or sometimes referred to herein as a remote plasma generator. In some applications, an RPS can be used to clean portions of a semiconductor manufacturing chamber.

[0017] Examples of plasma processing systems

[0018] Figure 1 This is a schematic representation of a plasma processing system. The plasma processing system 10 is configured for plasma-assisted etching processes, such as reactive ion etching (RIE) plasma processing. The plasma processing system 10 can also be used in other plasma-assisted processes, such as plasma-enhanced deposition processes (e.g., plasma-enhanced chemical vapor deposition (PECVD), plasma-enhanced physical vapor deposition (PEPVD), plasma chamber cleaning, plasma-enhanced atomic layer deposition (PEALD), plasma processing, plasma-based ion implantation, or plasma doping (PLAD). In one configuration, such as... Figure 1 As shown in Figure A, the plasma processing system 10 is configured to form capacitively coupled plasma (CCP). However, in some embodiments, the plasma may alternatively be generated by an inductively coupled source disposed above the processing region of the plasma processing system 10.

[0019] The plasma processing system 10 includes a processing chamber 100, a substrate support assembly 136, a gas delivery system 182, a high DC voltage supply 173, a radio frequency (RF) generator 171, and an RF matching 172 (e.g., an RF impedance matching network). The chamber cover 123 includes one or more sidewalls and a chamber base configured to withstand applied pressure and energy while plasma 101 is generated within a vacuum environment maintained in the processing volume 129 of the processing chamber 100 during processing.

[0020] A gas delivery system 182 coupled to a processing volume 129 of processing chamber 100 is configured to deliver at least one processing gas from at least one gas processing source 119 to the processing volume 129 of processing chamber 100. The gas delivery system 182 includes a processing gas source 119 and one or more gas inlets 128 positioned through a chamber cover 123. The gas inlets 128 are configured to deliver one or more processing gases to the processing volume 129 of processing chamber 100. The processing gas source 119 is also coupled to an inlet port of a remote plasma source (RPS) 192, such that the processing gas can be supplied through the RPS 192 to convert the gas into a reactive plasma and subsequently reach the processing area of ​​processing chamber 100.

[0021] Processing chamber 100 includes an upper electrode (e.g., chamber cover 123) and a lower electrode (e.g., substrate support assembly 136) positioned within a processing volume 129 of processing chamber 100. The upper and lower electrodes face each other. In one embodiment, an RF generator 171 is electrically coupled to the lower electrode. The RF generator 171 is configured to deliver an RF signal to ignite and sustain plasma 101 between the upper and lower electrodes. In some alternative configurations, the RF generator 171 may also be electrically coupled to the upper electrode. For example, the RF generator 171 may deliver RF source power to an RF substrate within a cathode assembly (e.g., substrate support assembly 136) for plasma production, while the upper electrode is grounded. The center frequency of the RF source power can range from 13.56 MHz to very high frequencies, such as 40 MHz, 60 MHz, 120 MHz, or 162 MHz. In some instances, the RF source power may also be delivered through the upper electrode. The RF source power may operate in continuous or pulsed mode. The pulse frequency of the RF power can be from 100 to 10 kHz, and the duty cycle ranges from 5% to 95%. The RF generator 171 has frequency tuning capability and can adjust its RF power frequency within, for example, ±5% or ±10%. In some embodiments, the RF generator 171 switches the RF power frequency at a predetermined rate (e.g., two nanoseconds, fifty nanoseconds, etc.).

[0022] The substrate support assembly 136 may be coupled to a high-voltage DC supply 173 that supplies clamping voltage thereto. The high-voltage DC supply 173 may be coupled to a filter assembly 178 disposed between the high-voltage DC supply 173 and the substrate support assembly 136.

[0023] Filter assembly 178 is configured to electronically isolate high-voltage DC supply 173 during plasma processing. In one configuration, the quiescent DC voltage is between approximately -5000 V and approximately 5000 V and is delivered using an electrical conductor, such as a coaxial power delivery line. Filter assembly 178 may include multiple filtering components or a single shared filter.

[0024] A substrate support assembly 136 is coupled to a pulsed voltage (PV) waveform generator 175, which is configured to supply PV through a filter assembly 111 to bias the substrate support assembly 136. The PV waveform generator 175 is coupled to a filter assembly 178. The filter assembly 178 is disposed between the PV waveform generator 175 and the substrate support assembly 136. The filter assembly 178 is configured to electronically isolate the PV waveform generator 175 during plasma processing.

[0025] A substrate support assembly 136 is coupled to an RF generator 171 configured to deliver RF signals to a processing volume 129 of the processing chamber 100. The RF generator 171 is electronically coupled to an RF match 172 disposed between the RF generator 171 and the processing volume 129 of the processing chamber 100. For example, the RF match 172 is circuitry used between the RF generator 171 and the plasma reactor (e.g., the processing volume 129 of the processing chamber 100) to optimize power delivery efficiency. One or more RF filters (e.g., within the RF match 172) are designed to allow power only within a selected frequency range and to isolate the RF power supplies from each other. In some cases, the bandwidth of the RF filters must be greater than the frequency tuning range of the RF generator 171.

[0026] During plasma processing, RF generator 171 delivers an RF signal to substrate support assembly 136 via RF matching 172. For example, an RF signal is applied to a load (e.g., gas) in the processing volume 129 of processing chamber 100. If the impedance of the load is not properly matched to the impedance of the source (e.g., RF generator 171), a portion of the waveform can be reflected back in the opposite direction. Therefore, to prevent most of the waveform from being reflected back, some embodiments find a matching impedance (e.g., a matching point) by adjusting one or more components of RF matching 172 when the source and load impedances change.

[0027] RF match 172 is electrically coupled to RF generator 171, substrate support assembly 136, and PV waveform generator 175. RF match 172 is configured to receive a synchronization signal from either or both of RF generator 171 and PV waveform generator 175.

[0028] RF generator 171 and PV waveform generator 175 are each directly coupled to system controller 126. System controller 126 synchronizes the corresponding generated RF signals and PV waveforms.

[0029] Voltage and current sensors can be placed at the inputs and / or outputs of RF match 172 to measure impedance and other parameters. These sensors can be synchronized using external transistor-transistor logic (TTL) synchronization signals from an advanced waveform generator and / or RF generator, or using measured voltage and current data to internally determine timing. For example, output sensor 117 is configured to measure the impedance and other characteristics of plasma processing chamber 100, such as voltage, current, harmonics, phase, and / or the like. Input sensor 116 is configured to measure the impedance and other characteristics of RF generator 171, such as voltage, current, harmonics, phase, and / or the like. Based on either the synchronization signal or the characteristics of plasma processing chamber 100, RF match 172 can capture rapid impedance changes and optimize impedance matching.

[0030] A PV waveform generator 175 supplies a PV waveform and / or a custom voltage waveform, which is the sum of harmonic frequencies associated with the waveform. The PV waveform generator 175 can output a synchronous TTL signal to the RF match 172. The voltage waveform is coupled to the bias electrode through a filter assembly 178. A high DC voltage supply 173 is used during the process for thermal control to clamp the substrate. In some cases, a third electrode may be present at the edge of the cathode assembly for edge uniformity control.

[0031] As shown, the plasma processing system may include a remote plasma source (RPS) 192, which can be used to clean the chamber after one or more deposition processes. In some aspects, the RPS 192 may be driven by the same RF generator 171 used for substrate processing, although a separate generator may be used. Matching 190 may be coupled between the generator 171 and the RPS 192 to reduce reflections and increase power efficiency. In some cases, matching 190 may be fixed, although variable matching may be used in some applications. In some aspects, frequency tuning may be used to perform matching. In some aspects, an arrangement may be used in which power from the generator 171 is separated, such that both the RPS plasma 103 and the in-chamber plasma 101 are enabled, with a portion of the power going to the RPS 192 and a portion going to the processing chamber.

[0032] Exemplary remote plasma source

[0033] Some aspects of this disclosure relate to remote plasma sources (RPS), such as those concerning Figure 1 The described RPS 192. The plasma source described herein can be a regulator with field-replaceable parts. As described in more detail herein, the plasma source can be customized for the generator frequency. Unlike conventional RPS implementations that include a ferrite core, the plasma source may not use any ferrite, thereby reducing complexity, cost, size, and power loss. The RPS described herein is easier to clean and maintain than conventional implementations and allows for the use of coatings to prevent components in the process gas from corroding the internal channels within the RPS, such as coatings that provide resistance to fluorine corrosion.

[0034] The RPS disclosed herein allows plasma 103 to be generated within RPS 192 during a first time period using a power supply (e.g., generator 171), and plasma 101 to be formed within processing volume 129 during a deposition or etching process performed on a substrate disposed on substrate support assembly 136 during a second time period. For example, the RPS can be operated in conjunction with a generator that operates at a higher frequency (e.g., 13.56 MHz) and lower power (e.g., 3.5 kW) than conventional RPSs.

[0035] Figure 2A remote plasma source (RPS) 200 (e.g., associated with RPS 192) according to certain aspects of this disclosure is illustrated. As shown, source 200 may include a primary excitation coil 202 and a reactor comprising a first plasma tube 204 and a second plasma tube 205. In some embodiments, the first plasma tube 204 and the second plasma tube 205 comprise materials such as stainless steel (SST) or aluminum with any suitable coating, such as magnesium. The primary excitation coil 202 may be driven using a 13.56 MHz radio frequency (RF) signal (e.g., RF generator 171), resulting in an oscillating B-field 240. Plasma 248 may be generated in plasma tubes 204 and 205 by the action of the B-field. Figure 2 As shown, the primary excitation coil 202 is wound in a relationship that is oriented parallel to the first plasma tube 204 and the second plasma tube 205, such that at least a portion of the generated oscillating field B 240 will pass through the center of the plasma-containing loop formed by the first plasma tube 204 and the second plasma tube 205. The primary excitation coil 202 may be arranged along the plasma tubes 204 and 205 (also referred to as "vacuum tubes"). In other words, in some embodiments, the first direction (Z direction) of the winding of the primary excitation coil 202 is perpendicular to a first plane (XY plane), along which the first plasma tube 204 and the second plasma tube 205 extend. In some aspects, the primary excitation coil may be wound in a relationship that is oriented parallel to the first plasma tube 204 and 205 (e.g., ...). Figure 2 The coil is located outside the loop (as shown), but in other respects, it may be inside the loop or located next to it. Coil 202 acts as the primary coil, and the plasma generated in tube 204 can act as a secondary coil magnetically coupled to the primary coil.

[0036] As shown, direct-current (DC) circuit breakers 216 and 218 (e.g., insulators) may be placed between plasma tubes 204 and 205 to electrically isolate them from each other. For example, each DC circuit breaker may include two flanges (e.g., flanges 292 and 294 for DC circuit breaker 216 and flanges 296 and 298 for DC circuit breaker 218) having sections of ceramic material containing separating flanges (e.g., flanges 292 and 294, or flanges 296 and 298) to allow high voltage to be generated across the DC block during plasma generation 248. For example, flange 292 of DC circuit breaker 216 may be coupled to a first end of tube 204, and flange 294 of DC circuit breaker 216 may be coupled to a first end of tube 205. Flange 296 of DC circuit breaker 218 may be coupled to the second end of tube 204, and flange 298 of DC circuit breaker 218 may be coupled to the second end of tube 205. DC circuit breakers 216 and 218 are each configured to allow in the central plasma generation region (e.g., Figure 2 A vacuum is generated and maintained within regions 291, 293 (shown), and this central plasma generation region extends between the first and second ends of DC breaks 216, 218. The central plasma generation region within each of the DC breaks 216, 218 includes a tubular opening that is fluidly connected within the internal region of plasma tubes 204, 205 to form a continuous open loop in which plasma 248 is generated during plasma processing. The tubular plasma tubes may have circular, rectangular, or other suitable cross-sections. As mentioned above, in some embodiments, the excitation coil 202 includes coil wiring wound in a loop shape substantially parallel to the first plane, and the first plasma tube 204, the second plasma tube 205, the first DC break 216, and the second DC break 218 are formed in a tubular loop extending in a direction parallel to the first plane.

[0037] RPS 200 includes an isolated resonant structure within a formed plasma container, comprising plasma tubes 204, 205 and DC breaks 216, 218. The isolated resonant structure formed within RPS 200 utilizes the plasma formed within the plasma container as an inductor. In some embodiments, RPS 200 includes one or more impedance generating elements coupled in parallel with DC breaks 216, 218. For example, resonant capacitor elements 206, 208 may be coupled in parallel with DC breaks 216, 218, respectively. A hollow inductor (e.g., the plasma within the tube) and an externally attached capacitor form the resonant structure. That is, capacitor elements 206, 208 form a resonant circuit to ignite the plasma inside tube 204 during plasma processing. Although in Figure 2The diagram shows two capacitor elements 206 and 208, but in some cases a configuration with only one capacitor element may be used, which is connected in parallel with one of the DC disconnectors 216 and 218.

[0038] In some implementations, such as Figure 2 As shown, one or more electrically isolated coolant loops (such as coolant loops 270, 272) may be arranged around tube 204 to control the temperature of plasma tubes 204, 205 and DC disconnects 216, 218 during processing. One or more coolant loops may include heat exchange devices of the liquid coolant type to remove excess heat and control the temperature of the RPS 200 components.

[0039] Figure 3 The current formed in a portion of the RPS according to certain aspects of this disclosure is shown. For example... Figure 3 As shown, the RPS includes a resonant circuit comprising a capacitor element 206 coupled across DC break 216. Primary resonant currents 312 and 314 are generated in tube 204 based on the current formed in the primary excitation coil 202. As shown, currents 312 and 314 flow between DC breaks 216 and 218 to ignite the plasma, attributable to DC breaks 216 and 218. The DC break in the hollow inductor plasma container allows field 240 to fill the central plasma generation region formed therein. The high voltage generated across the DC break, attributable to the RF power supplied to the primary excitation coil 202 and the presence of the resonant circuit coupled to DC breaks 216 and 218, can be used to ignite the plasma without an ignition circuit. Using two or more DC breaks reduces the voltage drop across the breaks, thereby reducing any problems related to sputtering of portions of plasma tubes 204 and 205 and DC breaks 216 and 218. Once the plasma is ignited, a plasma current 320 (e.g., a toroidal plasma current) flows in plasma tubes 204, 205 and DC circuit breaks 216, 218, as shown in the figure. The plasma current can be in the direction of the azimuth electric field (e.g., parallel to the XY plane). That is, the oscillating B field generates an oscillating azimuth electric field. Once the plasma has been ignited, the electric field can close itself, thus allowing the plasma current to flow continuously.

[0040] As shown in the figure, the capacitor elements 206 and 208 of the resonant circuit can be tunable (e.g., such as using variable capacitor elements). Depending on the frequency of the generator (e.g., generator 171) used to drive the primary excitation coil 202, the resonant structure can be tunable (e.g., the resonant frequency can be set by adjusting the capacitance of capacitor elements 206 and 208) or the frequency of the generator can be changed, or both.

[0041] See back Figure 2Pipe 204 may include an inflow portion (e.g., for gas inflow) and pipe 205 may include an outflow portion (e.g., for gas outflow). DC disconnect 210 may be coupled to the inflow portion of pipe 204 and DC disconnect 212 may be coupled to the outflow portion of pipe 205. The flange 260 of DC disconnect 210 may be coupled to gas delivery source 119. Figure 2 The gas delivery port (not shown) of the DC disconnect 210 is coupled to the RPS, and the flange 262 of the DC disconnect 210 can be coupled to the inflow portion of the tube 204. The flange 260 of the DC disconnect 210 can be grounded and isolated from the inflow portion of the tube 204 by a section of the separating flange containing ceramic material. Similarly, the flange 266 of the DC disconnect 212 can be coupled to the plasma processing chamber coupled to the RPS (e.g., Figure 1 An inlet port (not shown) is formed within the wall of chamber 100, and the flange 462 of DC circuit breaker 212 can be coupled to the outflow portion of pipe 205. Therefore, the flange 266 of DC circuit breaker 212 can be grounded and isolated from the outflow portion of pipe 205 by separating the ceramic material-containing section of the flange in DC circuit breaker.

[0042] Some aspects of this disclosure utilize existing RF generators (e.g., Figure 1 The RF generator 171 is used to power a remote plasma source. In other words, the RF generator 171 can be used to generate plasma 101 for the substrate processing chamber 100 at one point in time, and also to power the RPS at another point in time. In some aspects, at another point in time, the generator can be used simultaneously to power both the RPS and the substrate processing section using an RF power shunt circuit.

[0043] Although the RPS described herein can be implemented without a ferrite core, in some respects, a ferrite core suitable for high frequencies (e.g., 13.56 MHz) can be used to facilitate power coupling to the plasma or to reduce the voltage used for ignition. For example, as Figure 1 As shown, RPS 192 may include a ferrite core 193. The ferrite core may enclose both the excitation coil and the plasma tube.

[0044] In some aspects, the conductive wall of the plasma tube can be used as an excitation coil (e.g., alternatively having a separate excitation coil 202). For example, without using coil 202, power (e.g., 13.56 MHz power) can be directly supplied to the two flanges of tubes 204 and 205 or DC disconnect.

[0045] Figure 4 This is a process flow diagram illustrating a method 400 for remote plasma generation according to certain embodiments of the present disclosure. Method 400 can be performed by a remote plasma system, such as RPS 200.

[0046] At operation 402, the remote plasma system includes a DC disconnect that electrically isolates a first tube (e.g., plasma tube 204) from a second tube (e.g., plasma tube 205) and together forms a plasma container that forms a loop into which plasma can be formed during processing. Impedance generating elements (such as a first capacitor element (e.g., capacitor element 206)) may be coupled across the DC disconnect, which is positioned between a portion of the first and second tubes, to form a resonant circuit.

[0047] At operation 404, the remote plasma system provides an excitation signal to the excitation coil (e.g., excitation coil 202) or to the first and second tubes. In some embodiments, the excitation signal includes an RF signal, such as an RF signal provided at a frequency greater than 1 MHz (e.g., 13.56 MHz).

[0048] At operation 406, the remote plasma system generates plasma (e.g., plasma current 320) in the DC disconnect, first tube, and second tube based on the excitation signal and the impedance value (e.g., impedance setting) of the impedance generating element of the resonant circuit. The impedance value of the resonant circuit is configured such that the resonant circuit is substantially at or near resonance at the frequency of the excitation signal. In some aspects, the resonant signal is generated based on the excitation signal through a first capacitor element to generate plasma in the first and second tubes.

[0049] In some aspects of the RPS design disclosed herein, the first and second transistors are isolated by a first DC disconnect (e.g., DC disconnect 216) and a second DC disconnect (e.g., DC disconnect 218). The first DC disconnect may include a first flange (e.g., flange 292) coupled to a first end of the first transistor and a second flange (e.g., flange 294) coupled to a first end of the second transistor. The second DC disconnect (e.g., DC disconnect 218) may include a first flange (e.g., flange 296) coupled to a second end of the first transistor and a second flange (e.g., flange 298) coupled to a second end of the second transistor. The first capacitor element may include a first terminal coupled to the first flange of the first DC disconnect and a second terminal coupled to the second flange of the first DC disconnect. In some aspects, the first terminal of the second capacitor element (e.g., capacitor element 208) may be coupled to the first flange of the second DC disconnect, and the second terminal of the second capacitor element may be coupled to the second flange of the second DC disconnect.

[0050] In some aspects of the RPS design disclosed herein, the remote plasma system can electrically isolate the inflow portion of the first tube and the outflow portion of the second tube from the housing. The inflow portion of the first tube can be isolated from the housing via a third DC disconnect (e.g., DC disconnect 210), and the outflow portion of the second tube can be isolated from the housing via a fourth DC disconnect (e.g., DC disconnect 212). The third DC disconnect may include a first flange (e.g., flange 262) coupled to the inflow portion of the first tube and a second flange (e.g., flange 260) coupled to the housing. The fourth DC disconnect may include a first flange (e.g., flange 264) coupled to the outflow portion of the second tube and a second flange (e.g., flange 266) coupled to the housing for the remote plasma source. The second flanges of the third and fourth DC disconnects may be coupled to a ground potential node. In some aspects, the remote plasma system can cool the first tube via a first coolant loop (e.g., coolant loop 270) and the second tube via a second coolant loop (e.g., coolant loop 272).

[0051] Although the foregoing relates to embodiments of this disclosure, other and further embodiments of this disclosure may be designed without departing from its basic scope, which is defined by the following claims.

Claims

1. A remote plasma system, the remote plasma system comprising: First tube; Second tube; A first isolation component is coupled between a first end of the first tube and a first end of the second tube; A second isolation component is coupled between the second end of the first tube and the second end of the second tube; as well as A first terminal of a first capacitor element is coupled to a first end of a first tube, and a second terminal of the capacitor element is coupled to a first end of a second tube.

2. The remote plasma system as described in claim 1, wherein: The first isolation component includes a first DC disconnect having a first flange coupled to the first end of the first tube and a second flange coupled to the first end of the second tube. as well as The second isolation component includes a second DC disconnect having a first flange coupled to a second end of the first tube and a second flange coupled to a second end of the second tube.

3. The remote plasma system of claim 2, wherein the remote plasma system further comprises an excitation coil, wherein... The first tube, the second tube, the first isolation component, and the second isolation component form a loop extending across the first plane, and The excitation coil comprises coil wiring wound in a loop parallel to the first plane.

4. The remote plasma system of claim 3, further comprising a second capacitor element having a first terminal of the first flange coupled to the second DC disconnect and a second terminal of the second flange coupled to the second DC disconnect.

5. The remote plasma system of claim 1, further comprising a third DC disconnect having a first flange coupled to an inflow portion of the first tube and a second flange coupled to a housing.

6. The remote plasma system of claim 5, further comprising a first flange having an outflow portion coupled to the second tube and a second flange coupled to the housing, and a fourth DC disconnect.

7. The remote plasma system of claim 6, wherein the second flange of the third DC disconnect and the second flange of the fourth DC disconnect are coupled to a ground potential node.

8. The remote plasma system of claim 1, further comprising: A first coolant loop is provided around the first pipe; and A second coolant loop is provided around the second pipe.

9. The remote plasma system of claim 1, further comprising: Excitation coil; and A generator configured to generate a radio frequency (RF) signal provided to the excitation coil to generate plasma in the first and second tubes, wherein the first capacitor element is configured to generate a resonant signal based on the excitation signal to generate plasma in the first and second tubes.

10. The remote plasma system of claim 9, further comprising a matching coupling between the generator and a remote plasma source including the first tube and the second tube.

11. The remote plasma system of claim 1, further comprising a ferrite core at least partially surrounding the first tube and the second tube.

12. A method for remote plasma generation, the method comprising: The first transistor is electrically isolated from the second transistor, wherein the first capacitor element is coupled between the first transistor and the second transistor; as well as Provide an excitation signal to the excitation coil or the first tube and the second tube; as well as Plasma is generated in the first and second tubes based on the excitation signal, wherein the resonant signal is generated by the delivery of the excitation signal through the first capacitor element and configured to generate the plasma in the first and second tubes.

13. The method of claim 12, wherein: The first transistor and the second transistor are isolated by a first DC disconnect and a second DC disconnect; The first DC circuit breaker includes a first flange coupled to a first end of the first tube and a second flange coupled to a first end of the second tube; as well as The second DC disconnect includes a first flange coupled to the second end of the first tube and a second flange coupled to the second end of the second tube.

14. The method of claim 13, wherein the first capacitor element includes a first terminal coupled to the first flange of the first DC disconnect and a second terminal coupled to the second flange of the first DC disconnect.

15. The method of claim 14, wherein a first terminal of the second capacitor element is coupled to the first flange of the second DC disconnect and a second terminal of the second capacitor element is coupled to the second flange of the second DC disconnect.

16. The method of claim 12, further comprising: electrically isolating the inflow portion of the first tube and the outflow portion of the second tube from the housing.

17. The method of claim 16, wherein: The inflow portion of the first tube is isolated from the housing via a third DC disconnect; and The outflow portion of the second tube is isolated from the housing via a fourth DC disconnect.

18. The method of claim 17, wherein: The third DC circuit breaker includes a first flange coupled to the inflow portion of the first tube and a second flange coupled to the housing; as well as The fourth DC disconnect includes a first flange coupled to the outflow portion of the second tube and a second flange coupled to the housing.

19. The method of claim 18, wherein the second flange of the third DC disconnect and the second flange of the fourth DC disconnect are coupled to a ground potential node.

20. The method of claim 12, wherein the method further comprises: The first pipe is cooled by the first coolant loop; and The second tube is cooled by a second coolant loop.

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