Method for producing an electronic component, auxiliary carrier and device

Abstract

The invention relates to a method for producing an electronic component, comprising the following steps: - providing an auxiliary carrier (1), - providing a source wafer (6), - transferring µ-components (7) from the source wafer (6) to the auxiliary carrier (1), - processing the µ-components (7) on the auxiliary carrier (1), and - transferring the processed µ-components (7) from the auxiliary carrier (1) to a target substrate (18), wherein - the auxiliary carrier (1) has a layer (3) which is designed to catch the µ-components (7) during the transfer from the source wafer (6) to the auxiliary carrier (1) and to release the processed µ-components (7) during the transfer from the auxiliary carrier (1) to the target substrate (18). The invention further relates to an auxiliary carrier and a device.

Description

[0001] 2024PF00744 10 . November 2025

[0002] P2024 , 0724 WO N

[0003] - 1 -

[0004] Description

[0005] METHOD FOR MANUFACTURING AN ELECTRONIC COMPONENT, SUPPORT AND DEVICE

[0006] A method for manufacturing an electronic component, an auxiliary carrier, and a device are described.

[0007] An improved method for fabricating an electronic component, an improved support carrier, and an improved device are to be described. In particular, the method is to employ an improved support carrier with which it is possible to easily transfer p-type components from a source wafer to a target wafer.

[0008] These tasks are solved by a method comprising the steps of claim 1, by an auxiliary carrier comprising the features of claim 15 and by a device comprising the features of claim 16.

[0009] According to one embodiment of the method, an auxiliary carrier is provided. In particular, the auxiliary carrier has a principal extension plane, wherein the thickness of the auxiliary carrier is significantly less than the principal surfaces of the auxiliary carrier, which are opposite each other. For example, the auxiliary carrier is provided in a transfer system for transferring p-components from a source wafer to a target wafer. In particular, the auxiliary carrier is mechanically stable and fixed in the transfer system.

[0010] According to another implementation of the procedure, a source wafer is provided. In particular, the source wafer 2024PF00744 is dated November 10, 2025.

[0011] P2024 , 0724 WO N

[0012] - 2 - a large number of p-components on , which are set up and intended to be transferred from the source wafer to a target wafer with the aid of the auxiliary carrier .

[0013] In particular, p-type components are micro-semiconductor chips. A p-type semiconductor chip has, in particular, an active region. The active region comprises, in particular, at least one electronic and / or optoelectronic element that forms the basis for the function of the p-type semiconductor chip. For example, the active region is part of an epitaxial semiconductor layer sequence or another single-crystal semiconductor layer. If the p-type semiconductor chip is a light-emitting p-type semiconductor chip, such as a p-LED, the active region typically includes a pn junction configured to generate electromagnetic radiation.If the p-type semiconductor chip is, for example, a p-IC (IC being short for "integrated circuit"), then the active region comprises at least one electronic component of a circuit, such as a diode, a transistor, a voltage regulator, a rectifier, and / or an electrical resistor. In the case of a p-IC, the active region is, for example, enclosed by a single-crystal silicon layer.

[0014] The epitaxial semiconductor layer sequence is grown epitaxially on a growth substrate. The p-type device is characterized in particular by the fact that the growth substrate is located away from the epitaxial semiconductor layer sequence. Furthermore, the p-type device is preferably free of a mechanically stabilizing support as an alternative to a growth substrate. A typical thickness of a p-type device is therefore, for example, between 2024PF00744 10 November 2025

[0015] P2024 , 0724 WO N

[0016] - 3 - including 1.5 micrometers and including 25 micrometers.

[0017] The p-type component is characterized in particular by its exceptionally small dimensions. For example, the edge length of a p-type component, viewed from above in the active zone, is less than or equal to 100 micrometers, or less than or equal to 70 micrometers, or less than or equal to 50 micrometers.

[0018] In particular, p-components are provided on source wafers with holding structures that can be removed without damaging the p-components. Besides the term p-component, the following notations can also be used, for example: p-component, micro-component, u-component, u-component.

[0019] For example, the p-components are p-LEDs and / or p-ICs.

[0020] According to another implementation of the process, the p-components are transferred from the source wafer to the support carrier. For example, the p-components of the source wafer may be identical or different from one another. For example, the p-components may be mechanically stably connected to a substrate of the source wafer by retaining structures, which are released during transfer. For example, the p-components may be mechanically stably connected to the substrate of the source wafer by a polymer layer and / or polymer retaining structures. The transfer of the p-components from the source wafer to the support carrier can be carried out, for example, with the aid of a punch, such as a PDMS punch, with the aid of a laser, or by a pick-and-place process. For example, the source wafer may have the same diameter as the support carrier. 2024PF00744 November 10, 2025

[0021] P2024 , 0724 WO N

[0022] - 4 -

[0023] According to another embodiment of the process, the g-components are machined on the support carrier. The machining of the g-components can be carried out sequentially, i.e., serially. It is also possible for the g-components to be machined simultaneously, for example, in a batch process. During the machining of the g-components on the support carrier, for example, electrical contacts of the g-components are soldered, or conversion elements are applied to a radiation emission surface of the g-components. In particular, it is possible for the conversion elements to be provided by transferring the g-components to the support carrier, for example, because the conversion elements are already arranged on the support carrier. This is also referred to here as "machining." In particular, the g-components are in a modified form after machining compared to before machining.

[0024] For example, after transferring the g-components from the source wafer to the support carrier, a different main surface of the g-components is freely accessible than before the transfer. In other words, it is possible that transferring the g-components from the source wafer makes a main surface of the g-components freely accessible for machining. It is also possible to perform multiple transfer steps at any time during the process, for example, to make a desired main surface of the g-components accessible for machining.

[0025] According to another implementation form of the process, the machined g-components are transferred from the auxiliary carrier to a 2024PF00744 10 November 2025

[0026] P2024, 0724 WO N

[0027] 5

[0028] The target substrate is transferred. The target substrate consists, for example, of a plastic film in which metallic structures, such as conductive traces and electrical connections for the electrical contact of the p-type components, are arranged. For example, the plastic film may be made of PET (short for "polyethylene terephthalate").

[0029] According to another embodiment of the process, the auxiliary carrier has a layer designed to capture the p-components during transfer from the source wafer to the auxiliary carrier and to release the processed p-components during transfer from the auxiliary carrier to the target substrate. In other words, the layer has two distinct functions. One function of the layer is to capture the p-components during transfer from the source wafer to the auxiliary carrier and to fix the p-components securely on the auxiliary carrier, particularly for processing. The other function is to release the processed p-components during transfer from the auxiliary carrier to the target substrate. Specifically, the release of the p-components from the auxiliary carrier layer is typically initiated externally.

[0030] For example, the support structure includes a substrate wafer onto which the layer is applied in direct contact, particularly across the entire surface. For example, the layer has a thickness between 5 micrometers and 30 micrometers inclusive.

[0031] According to one implementation form, the process for manufacturing the electronic component comprises the following steps:

[0032] - Provision of the support carrier, 2024PF00744, November 10, 2025

[0033] P2024 , 0724 WO N

[0034] 6

[0035] - Providing the source wafer,

[0036] - Transferring the g-components from the source wafer to the support carrier,

[0037] - Machining the g-components on the auxiliary support, and

[0038] - Transferring the machined g-components from the auxiliary carrier to the target substrate, whereby

[0039] - the support carrier has the layer which is designed to capture the g-components during transfer from the source wafer to the support carrier and to release the processed g-components during transfer from the support carrier to the target substrate.

[0040] Preferably, the steps are carried out in the order mentioned. In particular, the method produces an optoelectronic component.

[0041] Further and multiple transfers of the g-components before transferring them to a final target substrate are also possible, for example if a change in the orientation of the g-components or a separation of the g-components according to different properties, such as the color of the emitted radiation, is necessary.

[0042] The present method is based, among other things, on the idea of ​​providing the support carrier with a layer that can both capture and fix the g-components and release them again after processing. This simplifies both the process and the support carrier. Furthermore, the method makes it particularly possible to transfer g-components onto the target substrate according to a freely defined pattern.

[0043] According to another embodiment of the process, the layer has a silicone material or consists of a 2024PF00744 10 November 2025

[0044] P2024 , 0724 WO N

[0045] - 7 -

[0046] Silicone material. Furthermore, it is also possible that the layer has a spin-on glass or consists of a spin-on glass. The spin-on glass can also have a silicone material or consist of a silicone material. For example, the silicone material is spin-deposited onto the substrate wafer of the support structure. It is also possible that the layer is a silicone film laminated onto the substrate wafer of the support structure.

[0047] The silicone material offers the advantage of being very temperature-stable and resistant to a wide range of chemicals. In particular, silicone is chemically inert. A non-reactive silicone surface is especially suitable for further processing steps, such as photoresist processing.

[0048] For example, the silicone material of the layer is a B-stage silicone material. The B-stage silicone material specifically contains at least two different silicones that are cured differently. For example, the two silicone materials are cured by different curing mechanisms. One silicone might be designed to be cured by temperature, while the other is designed to be cured by irradiation with electromagnetic radiation, such as UV light. Another curing mechanism is, for example, the use of a catalyst that initiates the curing of the silicone. It is also possible that the two silicones are designed to be cured by the same curing mechanism, but under different parameters, such as different wavelengths or different temperatures. 2024PF00744 November 10, 2025

[0049] P2024 , 0724 WO N

[0050] - 8 -

[0051] In particular, the silicone material of the layer is only partially cured. If the layer comprises a B-stage silicone material, it is especially possible that only one of the silicones within the silicone material is cured, while the other silicone remains uncured. The B-stage silicone material is particularly sticky.

[0052] According to another implementation, the layer has a sticky surface. For example, a sticky surface is achieved by the silicone material in the layer only being partially cured. For instance, the silicone material is a B-stage silicone material in which only one component is cured. Due to the sticky surface, the p-parts are caught and fixed by the layer during transfer.

[0053] For example, the silicone material has a component A and a component B, where one of the components A and B is uncrosslinked and the other component initiates the crosslinking of the silicone material when the two components are mixed. The hardness of the silicone material can be adjusted by the proportion of the crosslinking component in the mixture. If the proportion of the crosslinking component in the silicone material is comparatively low, the degree of crosslinking of the silicone material is generally correspondingly low. The silicone material with the low degree of crosslinking is particularly soft and has a low modulus of elasticity. Such silicone materials are particularly suitable for encapsulating p-type components and thus serving as the material for the layer. 2024PF00744 November 10, 2025

[0054] P2024 , 0724 WO N

[0055] 9

[0056] According to another embodiment of the process, the layer comprises a UV absorber. The UV absorber is specifically designed to absorb electromagnetic radiation from the ultraviolet spectral range. The ultraviolet spectral range includes, in particular, wavelengths between and including 200 nanometers and 440 nanometers, or consists entirely of this wavelength range. For example, the UV absorber comprises, or consists of, an inorganic material. For example, the UV absorber comprises one of the following materials: TiO₂, ITO (short for "indium zinc oxide"), IGZO (short for "indiumgalli zinc oxide"), SiC, GaN, Ti, Au, Ag, Gr. For example, the UV absorber is in the form of particles. Preferably, the layer with the UV absorber absorbs at least 30% of the incident electromagnetic radiation from the ultraviolet spectral range.

[0057] Furthermore, it is also possible that the UV absorber comprises or consists of an organic material. The organic material may, for example, have an extended 7i-electron system, carboxyl groups, and / or azides that serve as nitrogen generators. If the UV absorber is an organic material, it is preferably present in a homogeneous and uniformly distributed molecular form, and in particular not as particles or a conglomerate, within the silicone material.

[0058] The UV absorber is specifically designed to absorb electromagnetic radiation from the ultraviolet range, such as that emitted by a laser. 2024PF00744 10 November 2025

[0059] P2024 , 0724 WO N

[0060] - 10 - is . During the absorption of ultraviolet light by the UV absorber, the release of the processed p-components for transfer from the support to the target substrate is initiated in particular.

[0061] According to another embodiment of the method, the layer is a sequence of layers comprising at least two individual layers. In particular, the individual layer comprising a surface of the layer is free of the UV absorber. In this case, the individual layer comprising the surface of the layer is specifically designed only to capture and / or fix the p-components during transfer and not to release the p-components again.

[0062] In this embodiment, the UV absorber is preferably contained in the other single layer, which is arranged at a distance from the surface of the layer. In other words, the layer sequence is formed, for example, by a single layer with the UV absorber and a second single layer without a UV absorber, and the two single layers are arranged on top of each other on the substrate wafer of the support carrier.

[0063] It should be noted that the single layer, which is spaced apart from the surface of the layer, need not necessarily be a silicone. In this arrangement, a sticky surface is provided, for example, by the silicone of the single layer that covers the surface of the layer, while the other single layer is merely designed to allow the free detachment of the p-parts during transfer from the support to the target substrate. (See also 2024PF00744, November 10, 2025)

[0064] P2024 , 0724 WO N

[0065] - 11 -

[0066] In this implementation of the process, the two functions of the layer are separated into two individual layers. This allows the material of each individual layer to be advantageously adapted to its respective function independently of the other function.

[0067] The single layer, positioned at a distance from the surface of the layer, consists of, for example, one of the following materials: TiO₂, ITO (short for "indium zinc oxide"), IGZO (short for "indiumgalli zinc oxide"), SiC, GaN, Ti, Au, Ag, Gr. For example, the single layer, positioned at a distance from the surface of the layer, is designed as a thin film with a thickness between 20 nanometers and 500 nanometers. The single layer, positioned at a distance from the surface of the layer, can be flat or structured. Its purpose is to absorb electromagnetic radiation and convert it into heat.

[0068] According to another embodiment of the process, the two individual layers exhibit different hardnesses. For example, the layer without the UV absorber is softer than the layer with the UV absorber. The hardness of the two individual layers is characterized, for example, by the Young's modulus or the Shore hardness.

[0069] According to another embodiment of the method, the UV absorber is only partially contained in the layer. In particular, the UV absorber is only contained in the layer where the p-components are to be detached. It is advantageous to introduce the UV absorber only partially into the layer, while other areas of the layer remain free. 2024PF00744 November 10, 2025

[0070] P2024 , 0724 WO N

[0071] - 12 - of the UV absorber to reduce the energy input into the layer during the detachment of the g-components. Furthermore, by appropriately structuring the layer with the UV absorber, it is possible to adjust the detachment in a desired manner. In particular, the detachment rate of the g-components increases with the energy input into the layer and thus with the proportion of UV absorber contained in the layer. This can make it difficult to precisely position the g-components during detachment and transfer from the support to the target substrate. Therefore, it is advantageous to keep the energy input into the layer as high as necessary.

[0072] In other words, some areas of the layer are free of a UV absorber, while other areas of the layer are coated with the UV absorber. For example, viewed from above, the UV absorber is located only below the g-shaped components of the support structure. Specifically, the areas with and without UV absorbers are arranged laterally adjacent to each other. For example, the UV absorber is in direct contact with the substrate wafer of the support structure. Thus, the substrate wafer of the support structure could first be coated with the UV absorber in certain areas, and then the layer material, for example, a silicone material, could be applied over the entire surface of the structured UV absorber.

[0073] According to another embodiment of the method, the support carrier has a substrate wafer on or over which the layer is applied. In particular, a non-stick layer is applied in certain areas between the substrate wafer and the layer. The non-stick layer is, in particular, applied to the substrate wafer in a structured manner. 2024PF00744 10 November 2025

[0074] P2024 , 0724 WO N

[0075] - 13 -

[0076] For example, individual structural elements of the structured non-stick layer have circular or oval basic shapes. The non-stick layer advantageously reduces the area that needs to be removed when transferring the p-components from the support carrier to the target substrate. This reduces the energy transfer into the layer during removal, allowing for better control of the p-component transfer to the target substrate.

[0077] For example, the non-stick coating contains or is made of a fluorinated material. For example, the fluorinated materials ETFE (ethylene tetrafluoroethylene) and PTFE (polytetrafluoroethylene) are suitable for non-stick coatings.

[0078] According to another implementation form of the procedure, the following steps are carried out when transferring the machined p-components to the target substrate:

[0079] - Irradiation of the layer with electromagnetic laser radiation through the substrate wafer of the support carrier, and

[0080] - Detachment of the p-components from the layer.

[0081] In other words, the layer at this

[0082] In this method, electromagnetic laser radiation, for example from the UV range, is used to irradiate the layer. This causes bubbles to form in the layer, so that the p-type components detach from the layer.

[0083] In particular, the electromagnetic laser radiation is absorbed by the UV absorber in the layer, so that, for example, a gas forms in the material of the layer due to the absorbed energy, thus creating the bubbles. 2024PF00744 November 10, 2025

[0084] P2024 , 0724 WO N

[0085] - 14 -

[0086] According to another embodiment of the process, electrical contacts of the p-components are provided with a solder material during processing. For example, the solder material is autocatalytic tin.

[0087] According to another embodiment of the method, the layer of the support carrier comprises conversion elements onto which the p-devices are deposited during transfer from the source wafer to the support carrier. In particular, in this embodiment, the p-devices are p-devices configured to emit electromagnetic radiation of a first wavelength range. For example, the p-devices are p-LEDs. Specifically, in this embodiment, the p-devices have radiation emission surfaces from which the electromagnetic radiation is emitted. The p-devices are preferably deposited onto the conversion elements with their radiation emission surfaces facing the conversion elements. The conversion elements are specifically configured to convert electromagnetic radiation of the first wavelength range into electromagnetic radiation of a second wavelength range that differs from the first wavelength range.

[0088] For example, the conversion elements contain a phosphor that gives them wavelength-converting properties. The phosphor particles are specifically embedded in a polymeric matrix material, such as silicone. This polymeric matrix material gives the surface of the conversion elements sticky properties, causing the p-type components to be trapped and held in place by the conversion elements. 2024PF00744 November 10, 2025

[0089] P2024 , 0724 WO N

[0090] - 15 -

[0091] According to another implementation form of the procedure, the following steps are carried out when machining the g-components on the auxiliary carrier:

[0092] - Forming cavities in which the g-components are arranged during transfer on the auxiliary beam, and

[0093] - Filling the cavities with a conversion material.

[0094] For example, the cavities are formed by photoresist bridges applied to the substrate using a photolithographic mask. Preferably, the cavities are applied to the substrate before the g-components are transferred to it. The cavities are then filled with the conversion material, particularly after the g-components have been transferred. The conversion material is, for example, a silicone material containing phosphor particles. The conversion material is initially poured into the cavities in liquid form and then cured. Afterward, the photoresist bridges are removed, leaving separate conversion elements that partially embed the g-components.

[0095] For example, the g-components on the support layer are completely covered with a protective layer before the cavities are formed. This protective layer may contain or consist of an oxide such as SiO2. A nitride, such as SiN, is also suitable as a material for the protective layer. The protective layer material can be deposited, for example, by sputtering.

[0096] According to another implementation of the process, cavities are introduced into the substrate wafer of the support carrier, in 2024PF00744 10 November 2025

[0097] P2024 , 0724 WO N

[0098] - 16 - which the g-components are introduced during transfer. In other words, in this embodiment, the substrate wafer is already structured with cavities. In particular, the layer is applied to the entire surface of the structured substrate wafer. When processing the g-components on the support carrier, the cavities are filled with the conversion material in this embodiment. The conversion material is preferably in a liquid form and fills the cavities completely.

[0099] The auxiliary device described below is specifically designed for use in the described process. Therefore, all features and design features described in connection with the process can also be incorporated into the auxiliary device, and vice versa.

[0100] According to one embodiment, the support structure comprises a substrate wafer onto which a layer is deposited. In particular, the layer is configured to capture g-devices during transfer from a source wafer to the support structure and to release the g-devices again during transfer from the support structure to a target substrate. The substrate wafer is, in particular, transparent to ultraviolet electromagnetic radiation. For example, the substrate wafer contains or consists of quartz glass or sapphire.

[0101] The auxiliary support can, in particular, be comprised of a device. All features and embodiments described herein in connection with the auxiliary support and / or the method can therefore also be incorporated into the device, and vice versa. 2024PF00744 November 10, 2025

[0102] P2024 , 0724 WO N

[0103] - 17 -

[0104] The device includes, in particular, an auxiliary carrier as already described. Specifically, a multitude of p-components are deposited on the auxiliary carrier. For example, the p-components are deposited in direct contact with a layer on the auxiliary carrier, which is configured to capture the p-components during transfer from a source wafer to the auxiliary carrier and to release them again during transfer from the auxiliary carrier to a target substrate.

[0105] The method described here can be used to manufacture electronic components that emit white light. This is particularly true for implementations that utilize or incorporate conversion elements. For example, the method can be used to produce large-area films for displaying symbols and / or signals or for ambient lighting. These electronic components can be used, for example, as parts of headlights, devices for projection applications, or displays.

[0106] Further advantageous embodiments and developments of the method, the auxiliary carrier and the device result from the exemplary embodiments described below in conjunction with the figures.

[0107] Figures 1 to 3 show schematic sectional views of stages of a process according to an exemplary embodiment.

[0108] Figures 4 to 6 show schematic sectional views of stages of a process according to a further embodiment. 2024PF00744 10 November 2025

[0109] P2024 , 0724 WO N

[0110] - 18 -

[0111] Figures 7 to 9 show schematic sectional views of stages of a process according to a further exemplary embodiment.

[0112] Figures 10 and 11 show schematic sectional views of stages of a process according to a further embodiment.

[0113] Figures 12 and 13 show schematic sectional views of an auxiliary support according to an exemplary embodiment.

[0114] Figures 14 and 15 show schematic sectional views of an auxiliary support according to further exemplary embodiments.

[0115] Figures 16 to 21 show schematic representations of an auxiliary support according to further exemplary embodiments.

[0116] Figures 22 to 24 show schematic representations of a device according to an exemplary embodiment.

[0117] Figures 25 and 26 show schematic sectional views of a device according to further exemplary embodiments.

[0118] Identical, similar, or similarly acting elements are labeled with the same reference symbols in the figures. The figures and the relative sizes of the elements depicted in the figures are not to be considered to scale. Rather, individual elements, especially layer thicknesses, may be exaggerated for clarity and / or better understanding. 2024PF00744 November 10, 2025

[0119] P2024 , 0724 WO N

[0120] - 19 -

[0121] In the method according to the embodiment shown in Figures 1 and 3, an auxiliary carrier 1 is provided (Figure 1). The auxiliary carrier 1 has a substrate wafer 2, for example a sapphire wafer or a quartz glass wafer, onto which a layer 3 is applied. In this case, the layer 3 is applied over the entire surface of a major surface of the substrate wafer 2. For example, the layer 3 has a silicone material 4 into which a UV absorber 5 is incorporated. For example, the silicone material 4 with the UV absorber 5 is centrifugally deposited onto the substrate wafer 2.

[0122] Furthermore, a source wafer 6 is provided, which comprises a large number of p-components 7. The p-components 7 are mechanically stably connected to a support 9 of the source wafer 6 by a holding structure 8.

[0123] The p-components 7 are p-LEDs 10 with an epitaxial semiconductor layer sequence 11, which includes an active zone 12. The active zone 12 is configured to generate electromagnetic radiation. For this purpose, the active zone 12 has, in particular, a pn junction. Furthermore, each p-LED 10 has two electrical contacts 13 on a rear main surface, which are configured for electrical contacting the p-LED 10. A passivation layer 14 is arranged on a radiation emission surface of the p-LED 10. The radiation emission surface is configured to emit electromagnetic radiation.

[0124] The p-components 7 are transferred from the source wafer 6 to the support carrier 1 (Figure 2). For this purpose, the 2024PF00744 10. November 2025

[0125] P2024 , 0724 WO N

[0126] - 20 - p-components 7 detached from the holding structure 8, for example with the aid of a laser .

[0127] Layer 3 of the support carrier 1 is designed to capture the p-components 7 during their transfer from the source wafer 6 to the support carrier 1. For this purpose, a surface 15 of layer 3 is made sticky. In particular, the p-components 7 adhere to layer 3 and are fixed to the support carrier 1 by layer 3 (Figure 2).

[0128] The transferred p-components 7 are processed on the auxiliary carrier 1. In this case, the electrical contacts 13 of the p-components 7 are provided with a solder material 16, with which the p-components 7 can be electrically conductive and mechanically stable connected by soldering to electrical connection points 17 of another element, for example, a target substrate 18. The solder material 16 is, for example, an autocatalytic tin.

[0129] The machined p-components 7 are transferred from the support carrier 1 to the target substrate 18 (Figure 3). The target substrate 18 has, in particular, a base body 19, for example, a PET film. Furthermore, the target substrate 18 comprises metallic conductor tracks and electrical connection points 17, which are integrated into the PET film. The electrical connection points 17 are exposed on a surface of the target substrate 18. The target substrate 18 is also covered with a trapping layer 20, for example, with a flux for soldering.

[0130] To transfer the p-components 7 from the support carrier 1 to the target substrate 18, layer 3 is exposed through the substrate wafer 2 of the support carrier 1 using electromagnetic 2024PF00744 10 November 2025

[0131] P2024 , 0724 WO N

[0132] - 21 -

[0133] Laser radiation 21 from the ultraviolet spectral range is applied. The laser irradiates the areas of layer 3 through the substrate wafer 2 with ultraviolet laser radiation, on or above which the p-type components 7 are arranged. The UV absorber 5 absorbs the electromagnetic laser radiation 21 from the UV range, causing bubbles 22 to form in layer 3 and layer 3 to detach from the substrate wafer 2 in certain areas. As a result, the p-type component 7 detaches, is accelerated, and lands on the capture layer 20 above the electrical connection points 17 of the target substrate 18.

[0134] Subsequently, the electrical contacts 13 of the p-components 7 are electrically conductive and mechanically stable connected to the electrical connection points 17 of the target substrate 18 by soldering (not shown).

[0135] In the method according to the embodiment shown in Figures 4 to 6, the layer 3 of the support carrier 1, unlike in the embodiment shown in Figures 1 to 3, is designed as a layer sequence 23. The layer sequence 23 comprises a single layer 24 with a silicone material 4, onto which a protective layer 25 with SiO2 is sputtered over its entire surface. A UV absorber 5 is incorporated into the silicone material 4 of the single layer 25. Furthermore, the layer 2 comprises conversion elements 26, which are applied to the protective layer 25 at laterally spaced intervals from one another.

[0136] The conversion elements 26 are configured to convert electromagnetic radiation from the p-LEDs 10 of the source wafer 6 into electromagnetic radiation of a different wavelength range. In particular, the conversion elements 26 comprise a silicon material 4 into which 2024PF00744 10. November 2025

[0137] P2024 , 0724 WO N

[0138] - 22 -

[0139] Fluorescent particles 27 are incorporated, which give the conversion elements 26 their wavelength-converting properties. The conversion elements 26 have an adhesive surface, enabling them to capture and fix the p-LEDs 10 during transfer.

[0140] If the p-components 7 are transferred to the conversion elements 26 of the auxiliary carrier 1, electrical contacts 13 of the p-components 7 are again provided with a solder material 16, for example with autocatalytic tin (Figure 5).

[0141] In a next step, the single layer 24 of layer 3, which has the UV absorber 5, is irradiated with ultraviolet electromagnetic laser radiation 21 through the substrate wafer 2 of the support carrier 1, so that the p-components 7 are transferred from the support carrier 1 to the target substrate 18 (Figure 6). The protective layer 25 contributes to the detachment of the conversion elements 26, onto which the p-LEDs 10 are applied, since the adhesion of the conversion elements 26 to the radiation emission surfaces of the p-LEDs 10 is greater than the adhesion of the conversion elements 26 to the protective layer 25.

[0142] In the method according to the embodiment shown in Figures 7 and 9, the p-components 7 are first deposited from a source wafer 6 onto a support carrier 1 (not shown). The support carrier 1 has a layer 3 designed to fix the p-components 7 to the support carrier 1. The layer 3 comprises a silicone material 4 into which a UV absorber 5 is embedded. 2024PF00744 November 10, 2025

[0143] P2024 , 0724 WO N

[0144] - 23 -

[0145] In a next step, the support carrier 1 with the p-components 7 is provided with a protective layer 25, for example by sputtering. The protective layer 25 completely covers the surface of layer 3 as well as the surface of the p-components 7. For example, the protective layer 25 contains SiO2. Then, photoresist bridges 28 are applied between the p-components 7, so that cavities 29 are formed in which the p-components 7 are arranged. The protective layer 25 prevents the photoresist of the photoresist bridges 28 from adhering to the silicone material 4 of layer 3 of the support carrier 1 (Figure 7).

[0146] The cavities 29 are filled with a liquid conversion material 30. The conversion material 30 comprises, for example, a silicone material 4 into which phosphor particles 27 are incorporated. The liquid conversion material 30 completely fills the cavities 29 and is flush with the photoresist ridges 28. After filling, the liquid conversion material 30 is cured, forming conversion elements 26 that embed the p-components 7 (Figure 8). Alternatively, the conversion material 30 is applied using a squeegee, cured, and subsequently ground to the target thickness.

[0147] Then the photoresist bridges 28 are removed (Figure 9). On the auxiliary carrier 1 there are now separate p-components 7, each of which is embedded in a conversion element 26.

[0148] In the method according to the embodiment shown in Figures 10 and 11, the support carrier 1 has a substrate wafer 2 which is provided with cavities 29. A 2024PF00744 10 November 2025

[0149] P2024, 0724 WO N

[0150] - 24 -

[0151] Layer 3 is applied across the entire surface and is designed to capture g-components 7 during transfer from a source wafer 6 to the support carrier 1 and to release the processed g-components 7 during transfer from the support carrier 1 to the target substrate 18. Layer 3 completely covers the structured main surface of the substrate wafer 2. In particular, the bottom and side surfaces of the cavities 29 of the substrate wafer 2 are completely covered by layer 3.

[0152] g-components 7 are transferred from the source wafer 6 to the auxiliary carrier 1, with the g-components 7 being arranged in the cavities 29 (Figure 10).

[0153] The cavities 28 are then filled with a liquid conversion material 30, which, for example, contains phosphor particles 27 embedded in a silicone material 3 (Figure 11). The conversion material 30 is cured (not shown).

[0154] The device according to the embodiment shown in Figures 12 and 13 has an auxiliary carrier 1 comprising a substrate wafer 2 and a layer 3. The layer 3 is specifically designed to capture, fix, and release g-components 7 as they are transferred from a source wafer 6. g-components 7, for example g-ICs or g-LEDs 10, are arranged on the layer 3 (Figure 13).

[0155] Figure 12 shows a schematic sectional view of the entire device, while Figure 13 shows the section marked A in Figure 12.

[0156] In the device according to the embodiment shown in the figure

[0157] 14 is layer 3 in contrast to the device according to 2024PF00744 10 November 2025

[0158] P2024, 0724 WO N

[0159] 25 is formed as a layer sequence 23 in Figures 12 and 13, comprising two individual layers 24', 24''. The individual layer 24', which is applied directly to a substrate wafer 2 of the auxiliary carrier 1, has in this case a silicone material 4 with a first hardness, into which a UV absorber 5 is incorporated.

[0160] The other single layer 24'', which is applied to the single layer 24' with the UV absorber 5, also has a silicone material 4, but this differs in hardness from the silicone material 4 of the other single layer 24''. Furthermore, this single layer 24'' is free of a UV absorber 5. The UV absorber 5 is therefore only contained in the single layer 24'' that is applied directly to the substrate wafer 2 of the support carrier 1 and that forms a separation surface with the substrate wafer 1, which is detached from the substrate wafer 2 when the p-components 7 are transferred from the support carrier 1 to the target substrate 18.

[0161] The other single layer 24'' forms, in particular, a surface 15 of layer 3 and is, in this case, adhesive. Since the other single layer 24'' is free of the UV absorber 5, the surface 15 of layer 3 is formed solely by silicone material 4, which is generally significantly more adhesive than the UV absorber 5. Thus, it is possible to provide the single layer 24'', which is applied to the substrate wafer 2, with a high degree of UV absorber 5 and simultaneously achieve an adhesive surface 15 of layer 3 through the silicone material of the other single layer 24''.

[0162] The device according to the embodiment shown in Figure 15 also has a layer 3, which is a layer sequence 23 2024PF00744 10 November 2025

[0163] P2024, 0724 WO N

[0164] - 26 - is formed with two different individual layers 24', 24''. The individual layer 24', which is applied over the entire surface of the substrate wafer 2 of the support carrier 1, comprises or consists of a UV absorber 5. The other individual layer 24'' of the layer sequence 23 comprises or consists of a silicone material 4 and is free of a UV absorber 5. In other words, in the present embodiment, the silicone material 4, which is responsible for a sticky surface 15 of layer 3 for capturing and fixing the p-components 7, and the UV absorber 5, which is used to detach the p-components 7 from the support carrier 1, are arranged in two separate individual layers 24', 24''.

[0165] The single layer 24' is, for example, a thin film comprising at least one of the following materials: TiO2, ITO, IGZO, SiC, GaN, Ti, Au, Ag, Gr. The thickness of the single layer 24' can range from 20 nanometers to 500 nanometers. The single layer 24' can be either continuous or structured. The single layer 24' serves to absorb electromagnetic radiation and convert it into heat. This heat decomposes the overlying silicone material 4 of the other single layer 24'' at the interface, creating a bubble within its silicone material 4.

[0166] In the device according to the embodiment shown in Figures 16 and 17, unlike the embodiment shown in Figure 13, a structured non-stick layer 31 is arranged between layer 3 and the substrate wafer 2. In particular, the non-stick layer 31 is only arranged in certain areas on the substrate wafer 2. Figures 16 and 17 show, by way of example, various possible geometries of the 2024PF00744 10. November 2025

[0167] P2024 , 0724 WO N

[0168] - 27 -

[0169] Non-stick layer 31 . Figure 17 shows a top view of the main surfaces of the substrate wafer 2 .

[0170] The non-stick layer 31 is, for example, circular in shape and arranged centrally below two electrical contacts 13 of a p-component 7 (leftmost illustration in Figures 16 and 17). It is also possible for the non-stick layer 31 to be oval in shape and arranged beneath all six electrical contacts 13 (second illustration from the left in Figures 16 and 17). Furthermore, it is also possible for the non-stick layer 31 to be arranged circularly between the electrical contacts 13 of the p-component 7 (third illustration from the left in Figures 16 and 17). The illustration in Figures 16 and 17 on the far right shows circular structural elements of the non-stick layer 31, some of which are arranged beneath the electrical contacts 13 of the p-components 7.

[0171] Figures 18 to 21, unlike Figure 15, show a device in which the UV absorber 5 is applied in a structured manner to the substrate wafer 2 of the support carrier 1. In other words, the layer 3 of the device according to Figures 18 to 21 is also formed as a layer sequence 23 with two individual layers 24', 24''. The individual layer 24'', which comprises a surface 15 of the layer 3, consists only of a silicone material 4 and is free of the UV absorber 5, while the other individual layer 24' is formed solely by the UV absorber 5. The UV absorber 5 is applied in a structured manner to the substrate wafer 2 of the support carrier 1 and, in a top view of the substrate wafer 2, is located below the p-components 7. Figures 19, 20, and 21 show possible geometries of the UV absorber 5 in top view. 2024PF00744 November 10, 2025

[0172] P2024 , 0724 WO N

[0173] - 28 -

[0174] As shown, for example, in Figure 19, it is possible that the UV absorber 5 is rectangular below the p-component 7 and has the same base area as the p-component 7.

[0175] Figure 20 shows a similarly rectangular basic shape of the UV absorber 5, which, however, has a larger base area than the p-component 7 that is arranged above it.

[0176] The UV absorber 5 according to figure 21 has an oval basic shape, which is also arranged below the p-component 7.

[0177] The device according to Figures 22 to 24 also includes a support carrier 1 with a substrate wafer 2 on which a layer 3 is arranged. As shown in Figure 22, the substrate wafer 1 has a chamfer 33 at least partially at an edge region 32, which is designed to allow the device to be mechanically and stably installed in a transfer system. The chamfer 33 can completely encircle the edge region 32 of the substrate wafer 2 or be formed only partially within the edge region 32.

[0178] As shown in the top view of the support carrier 1 in Figure 23, layer 3 is arranged centrally on the substrate wafer 2 of the support carrier 1, so that the edge region 32 of the substrate wafer 1 is freely accessible. In particular, the substrate wafer 1 has chip-free areas 34 in the edge region 32, which are free of p-components 7, for tilt measurement. In addition, a notch 35 is arranged in the edge region 32 of the substrate wafer 2, which is provided for aligning the support carrier 1 in the transfer system. 2024PF00744 November 10, 2025

[0179] P2024, 0724 WO N

[0180] - 29 -

[0181] On layer 3 of the auxiliary support 1, p-components 7 are arranged, as shown by way of example in Figure 24. Figure 24 shows in particular the section that is marked B in Figure 22.

[0182] In the device according to Figure 25, electrical contacts 13 of p-components 7, which are arranged on an auxiliary carrier 1, are provided with a solder material 16.

[0183] The device according to Figure 26 has p-components 7 and an auxiliary carrier 1 with a layer 3. The layer 3 is designed as a sequence of layers 23, which, in addition to a single layer 24 with a silicone material 4 into which a UV absorber 5 is incorporated, has a protective layer 25 and conversion elements 26.

[0184] The present application claims priority over German application DE 102024135273.6, the disclosure content of which is hereby incorporated by reference.

[0185] The invention is not limited to the description provided by the exemplary embodiments. Rather, the invention encompasses every new feature and every combination of features, which in particular includes every combination of features in the claims, even if that feature or combination itself is not explicitly stated in the claims or exemplary embodiments. 2024PF00744 November 10, 2025

[0186] P2024 , 0724 WO N

[0187] 30

[0188] Reference character list

[0189] 1 Auxiliary carrier

[0190] 2 substrate wafers

[0191] 3-layer

[0192] 4 silicone material

[0193] 5 UV absorbers

[0194] 6 source wafers

[0195] 7g component

[0196] 8 Support structure

[0197] 9 carriers

[0198] 10g LED

[0199] 11 epitaxial semiconductor layer sequence

[0200] 12 active zones

[0201] 13 electrical contact

[0202] 14 Passivation layer

[0203] 15 Surface of the layer

[0204] 16 Solder material

[0205] 17 electrical connection point

[0206] 18 Target substrate

[0207] 18 Basic components of the target substrate

[0208] 20 Trap layer

[0209] 21 electromagnetic laser radiation

[0210] 22 bladder

[0211] 23 layer sequence

[0212] 24, 24', 24' 'Single shift

[0213] 25 protective layer

[0214] 26 Conversion element

[0215] 27 phosphor particles

[0216] 28 Photoresist bridge

[0217] 29 Cavity

[0218] 30 liquid conversion material

[0219] 31 Non-stick layer 2024PF00744 10 . November 2025

[0220] P2024 , 0724 WO N

[0221] - 31 -

[0222] 32 Edge area

[0223] 33rd phase

[0224] 34 chip-free areas

[0225] 35 notch

Claims

2024PF00744 November 10, 2025 P2024, 0724 WO N - 32 - Patent claims:

1. Method for manufacturing an electronic component comprising the following steps: - Provision of an auxiliary carrier (1) , - Providing a source wafer (6) , - Transfer of g-components (7) from the source wafer (6) to the auxiliary carrier (1) , - Machining the g-components (7) on the auxiliary support (1) , and - Transferring the machined g-components (7) from the auxiliary carrier (1) to a target substrate (18) , wherein - the auxiliary carrier (1) has a layer (3) which is designed to capture the g-components (7) during transfer from the source wafer (6) to the auxiliary carrier (1) and to release the processed g-components (7) during transfer from the auxiliary carrier (1) to the target substrate (18).

2. Method according to the preceding claim, wherein the layer (3) comprises a silicone material (4).

3. Method according to any of the preceding claims, wherein the layer (3) has a sticky surface (15).

4. Method according to any of the preceding claims, wherein the layer (3) comprises a UV absorber (5).

5. Method according to any one of the preceding claims, wherein - the layer (3) is a sequence of layers (23) comprising at least two individual layers (24, 24', 24'') , and - wherein the single layer (24, 24', 24'') comprising a surface (15) of the layer (3) is free of a UV absorber (5) . 2024PF00744 November 10, 2025 P2024, 0724 WO N - 33 - 6. Method according to the previous claim, wherein the two individual layers (24, 24', 24'') have different hardnesses.

7. Method according to one of claims 5 to 6, wherein the single layer (24, 24', 24'') which is spaced apart from the surface (15) of the layer (3) comprises a UV absorber (5).

8. Method according to the preceding claim, wherein the UV absorber (5) is only partially contained in the layer (3).

9. Method according to any one of the preceding claims, wherein - the auxiliary carrier (1) has a substrate wafer (2) on or over which the layer (3) is applied, and - a non-stick layer (31) is applied in places between the substrate wafer (2) and the layer (3).

10. Method according to one of the preceding claims, wherein the following steps are performed when transferring the machined p-components (7) to the target substrate (18): - Irradiation of the layer (3) with electromagnetic laser radiation (21) through the substrate wafer (2) of the auxiliary carrier (1) , and - Detachment of the p-components (7) from the layer (3) .

11. Method according to the previous claim, wherein during the machining of the p-components (7) electrical contacts (13) of the p-components (7) are provided with a solder material (16). 2024PF00744 November 10, 2025 P2024, 0724 WO N - 34 - 12. Method according to one of the preceding claims, wherein the layer (3) of the auxiliary carrier (1) comprises conversion elements (26) onto which the p-components (7) are applied during transfer from the source wafer (6) to the auxiliary carrier (1).

13. A method according to any of the preceding claims, wherein the following steps are performed: - Forming cavities (29) in which the p-components (7) are arranged during transfer on the auxiliary support (1) , - Filling the cavities (29) with a conversion material (30) when processing the p-components (7) .

14. Method according to any one of claims 1 to 12, wherein - a substrate wafer (2) of the auxiliary carrier (1) has cavities (29) into which the p-components (7) are inserted during transfer, and - when machining the p-components (7) on the auxiliary carrier (1) the cavities (29) are filled with a conversion material (30).

15. Auxiliary carriers (1) comprising: - a substrate wafer (2) on which a layer (3) is applied, wherein the layer (3) is configured to capture p-components (7) during transfer from a source wafer (6) to the auxiliary carrier (1) and to release p-components (7) during transfer from the auxiliary carrier (1) to a target substrate (18).

16. Device comprising: - an auxiliary carrier (1) according to the previous claim, and - a large number of p-components (7) which are mounted on the auxiliary support (1).

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