Light-emitting device

The light-emitting device design with specific electron transport layer configurations and organic compounds addresses high driving voltage and low efficiency issues by optimizing electric field application, resulting in reduced voltage and improved luminous efficiency.

WO2026115406A1PCT designated stage Publication Date: 2026-06-04SEMICON ENERGY LAB CO LTD
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Patent Information

Authority / Receiving Office
WO · WO
Patent Type
Applications
Current Assignee / Owner
SEMICON ENERGY LAB CO LTD
Filing Date
2025-11-21
Publication Date
2026-06-04

AI Technical Summary

Technical Problem

Organic EL elements face issues with high driving voltage, low luminous efficiency, and high power consumption due to giant surface potentials (GSP) in vapor-deposited films, which affect the electric field distribution.

Method used

A light-emitting device configuration with two electron transport layers, where the GSP_slope of the second electron transport layer is negative and smaller than that of the first, and the distance between the second electron transport layer and the cathode is 5 nm or less, utilizing organic compounds with specific GSP_slope properties to optimize electric field application to the light-emitting layer.

Benefits of technology

The configuration reduces driving voltage, enhances luminous efficiency, and lowers power consumption by effectively applying an electric field to the light-emitting layer, improving overall device performance.

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Abstract

The present invention provides a light-emitting device with a low drive voltage. Provided is a light-emitting device including a first electrode formed on an insulating surface, a second electrode facing the first electrode, and an EL layer located between the first electrode and the second electrode. The EL layer has an emissive layer, a hole transport layer, a first electron transport layer, and a second electron transport layer. The first electron transport layer is located between the emissive layer and the second electron transport layer. The second electron transport layer is located between the first electron transport layer and the second electrode. The emissive layer is located between the hole transport layer and the first electron transport layer. The GSP_slope (mV / nm) of the second electron transport layer is a negative value and is less than the GSP_slope (mV / nm) of the first electron transport layer (where the GSP_slope (mV / nm) is a parameter expressed as ΔV / Δd, being the change ΔV (mV) in surface potential relative to the change Δd (nm) in film thickness).
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