Information processing method, information processing device, and computer program

Abstract

Provided is an information processing method which makes it possible to select whether to switch a setting condition for a process performed by a substrate processing device to an updated condition that has been updated using a model. An information processing device according to the present embodiment acquires a setting condition for a process performed by a substrate processing device, and acquires an updated condition obtained by updating the acquired setting condition, such acquisition performed using a model that derives an updated condition obtained by updating the setting condition with respect to the setting condition for the process. The information processing device: acquires a first simulation result, which indicates an operation state of the substrate processing device if a process based on the setting condition is performed, and a second simulation result, which indicates an operation state of the substrate processing device in a case where a process based on the update condition is performed, by simulation; and outputs the acquired first simulation result and second simulation result.

Description

Information Processing Method, Information Processing Apparatus, and Computer Program

[0001] The present disclosure relates to an information processing method, an information processing apparatus, and a computer program.

[0002] Patent Document 1 discloses a technique for suppressing fluctuations in the pressure inside a plasma processing chamber.

[0003] Japanese Patent Application Laid-Open No. 2023-178190

[0004] The present disclosure provides an information processing method or the like that enables a selection as to whether to switch the set conditions of a process performed by a substrate processing apparatus to updated conditions updated using a model.

[0005] An information processing method according to an embodiment acquires set conditions of a process performed by a substrate processing apparatus, and using a model that derives updated conditions obtained by updating the set conditions with respect to the set conditions of the process, acquires updated conditions obtained by updating the acquired set conditions, and by simulation, obtains a first simulation result indicating an operating state of the substrate processing apparatus when performing a process based on the set conditions and a second simulation result indicating an operating state of the substrate processing apparatus when performing a process based on the updated conditions, and causes a computer to execute a process of outputting the acquired first simulation result and second simulation result.

[0006] According to the present disclosure, it becomes possible to select whether to switch the set conditions of a process performed by a substrate processing apparatus to updated conditions updated using a model.

[0007] It is a diagram for explaining a configuration example of a capacitively coupled plasma processing apparatus. It is a block diagram showing an example of the configuration of a pressure valve control device. It is a flowchart showing an example of a selection processing procedure between control without using a pressure model and control using a pressure model. It is an explanatory diagram showing an example of a screen of a recipe editor. It is a flowchart showing an example of a procedure of a process in which a control unit controls a pressure valve control device. It is a diagram for explaining a process in which a control unit controls an RF power supply.

[0008] The information processing method, information processing apparatus, and computer program described herein will be specifically explained with reference to drawings illustrating their embodiments. Hereinafter, an embodiment applied to a plasma processing apparatus will be described as an example of a substrate processing apparatus. However, this disclosure is not limited to the following examples, and is intended to include all modifications within the meaning and scope of the claims, as indicated by the claims.

[0009] The following describes an example of a plasma processing system configuration. Figure 1 is a diagram illustrating an example of a capacitively coupled plasma processing system configuration.

[0010] The plasma processing system includes a capacitively coupled plasma processing apparatus 1 and a control unit 2. The capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply unit 20, a power supply 30, and an exhaust system 40. The plasma processing apparatus 1 also includes a substrate support unit 11 and a gas introduction unit. The gas introduction unit is configured to introduce at least one processing gas into the plasma processing chamber 10. The gas introduction unit includes a shower head 13. The substrate support unit 11 is located inside the plasma processing chamber 10. The shower head 13 is located above the substrate support unit 11. In one embodiment, the shower head 13 constitutes at least a portion of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the shower head 13, the side walls 10a of the plasma processing chamber 10, and the substrate support unit 11. The plasma processing chamber 10 has at least one gas supply port for supplying at least one processing gas to the plasma processing space 10s, and at least one gas outlet for discharging gas from the plasma processing space. The plasma processing chamber 10 is grounded. The shower head 13 and the substrate support part 11 are electrically insulated from the housing of the plasma processing chamber 10.

[0011] The substrate support portion 11 includes a main body portion 111 and a ring assembly 112. The main body portion 111 has a central region 111a for supporting the substrate W and an annular region 111b for supporting the ring assembly 112. A wafer is an example of a substrate W. The annular region 111b of the main body portion 111 surrounds the central region 111a of the main body portion 111 in a plan view. The substrate W is placed on the central region 111a of the main body portion 111, and the ring assembly 112 is placed on the annular region 111b of the main body portion 111 so as to surround the substrate W on the central region 111a of the main body portion 111. Therefore, the central region 111a is also called the substrate support surface for supporting the substrate W, and the annular region 111b is also called the ring support surface for supporting the ring assembly 112.

[0012] In one embodiment, the main body 111 includes a base 1110 and an electrostatic chuck 1111. The base 1110 includes a conductive member. The conductive member of the base 1110 can function as a lower electrode. The electrostatic chuck 1111 is placed on the base 1110. The electrostatic chuck 1111 includes a ceramic member 1111a and an electrostatic electrode 1111b placed within the ceramic member 1111a. The ceramic member 1111a has a central region 111a. In one embodiment, the ceramic member 1111a also has an annular region 111b. Other members surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck or an annular insulating member, may also have an annular region 111b. In this case, the ring assembly 112 may be placed on the annular electrostatic chuck or the annular insulating member, or on both the electrostatic chuck 1111 and the annular insulating member. Furthermore, at least one RF / DC electrode, which is coupled to the RF (Radio Frequency) power supply 31 and / or DC (Direct Current) power supply 32 described later, may be arranged within the ceramic member 1111a. In this case, at least one RF / DC electrode functions as a lower electrode. When a bias RF signal and / or DC signal, described later, is supplied to at least one RF / DC electrode, the RF / DC electrode is also called a bias electrode. Note that the conductive member of the base 1110 and at least one RF / DC electrode may function as multiple lower electrodes. Also, the electrostatic electrode 1111b may function as a lower electrode. Therefore, the substrate support portion 11 includes at least one lower electrode.

[0013] The ring assembly 112 includes one or more annular members. In one embodiment, the one or more annular members include one or more edge rings and at least one covering ring. The edge rings are formed of a conductive or insulating material, and the covering rings are formed of an insulating material.

[0014] The substrate support section 11 may also include a temperature control module configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112, and the substrate to a target temperature. The temperature control module may include a heater, a heat transfer medium, a flow path 1110a, or a combination thereof. A heat transfer fluid such as brine or gas flows through the flow path 1110a. In one embodiment, the flow path 1110a is formed within the base 1110, and one or more heaters are arranged within the ceramic member 1111a of the electrostatic chuck 1111. The substrate support section 11 may also include a heat transfer gas supply section configured to supply heat transfer gas to the gap between the back surface of the substrate W and the central region 111a.

[0015] The showerhead 13 is configured to introduce at least one processing gas from the gas supply unit 20 into the plasma processing space 10s. The showerhead 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and a plurality of gas inlet ports 13c. The processing gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s through the plurality of gas inlet ports 13c. The showerhead 13 also includes at least one upper electrode. In addition to the showerhead 13, the gas introduction unit may also include one or more side gas injectors (SGIs) attached to one or more openings formed in the side wall 10a.

[0016] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one processing gas to the shower head 13 from a corresponding gas source 21 via a corresponding flow controller 22. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Furthermore, the gas supply unit 20 may include one or more flow modulation devices that modulate or pulse the flow rate of at least one processing gas.

[0017] The power supply 30 includes an RF power supply 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 is configured to supply at least one RF signal (RF power) to at least one lower electrode and / or at least one upper electrode. This causes plasma to be formed from at least one processing gas supplied to the plasma processing space 10s. Thus, the RF power supply 31 can function as at least part of a plasma generation unit configured to generate plasma from one or more processing gases in the plasma processing chamber 10. Furthermore, by supplying a bias RF signal to at least one lower electrode, a bias potential is generated on the substrate W, and ionic components in the formed plasma can be drawn into the substrate W.

[0018] In one embodiment, the RF power supply 31 includes a first RF generation unit 31a and a second RF generation unit 31b. The first RF generation unit 31a is coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matching circuit and is configured to generate a source RF signal (source RF power) for plasma generation. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generation unit 31a may be configured to generate a plurality of source RF signals having different frequencies. One or more generated source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0019] The second RF generation unit 31b is coupled to at least one lower electrode via at least one impedance matching circuit and is configured to generate a bias RF signal (bias RF power). The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 60 MHz. In one embodiment, the second RF generation unit 31b may be configured to generate a plurality of bias RF signals having different frequencies. One or more generated bias RF signals are supplied to at least one lower electrode. In various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0020] The power supply 30 may also include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generation unit 32a and a second DC generation unit 32b. In one embodiment, the first DC generation unit 32a is connected to at least one lower electrode and configured to generate a first DC signal. The generated first bias DC signal is applied to at least one lower electrode. In one embodiment, the second DC generation unit 32b is connected to at least one upper electrode and configured to generate a second DC signal. The generated second DC signal is applied to at least one upper electrode.

[0021] In various embodiments, at least one of the first and second DC signals may be pulsed. In this case, a sequence of voltage pulses is applied to at least one lower electrode and / or at least one upper electrode. The voltage pulses may have a rectangular, trapezoidal, triangular, or combination thereof pulse waveform. In one embodiment, a waveform generation unit for generating a sequence of voltage pulses from a DC signal is connected between the first DC generation unit 32a and at least one lower electrode. Thus, the first DC generation unit 32a and the waveform generation unit constitute a voltage pulse generation unit. When the second DC generation unit 32b and the waveform generation unit constitute a voltage pulse generation unit, the voltage pulse generation unit is connected to at least one upper electrode. The voltage pulses may have positive or negative polarity. Furthermore, the sequence of voltage pulses may include one or more positive voltage pulses and one or more negative voltage pulses within one period. The first and second DC generation units 32a and 32b may be provided in addition to the RF power supply 31, and the first DC generation unit 32a may be provided in place of the second RF generation unit 31b.

[0022] The exhaust system 40 may be connected to, for example, a gas outlet 10e located at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve 41 and a vacuum pump 42. The pressure regulating valve 41 regulates the pressure in the plasma processing space 10s. A pressure valve control device 50 may be provided to control the pressure in the plasma processing space 10s by controlling the opening of the pressure regulating valve 41. The pressure valve control device 50 may be part of the plasma processing apparatus 1 or it may be an external component of the plasma processing apparatus 1. The vacuum pump 42 may include a turbomolecular pump, a dry pump, or a combination thereof.

[0023] The control unit 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to perform various processes described herein. The control unit 2 may be configured to control each element of the plasma processing apparatus 1 to perform the various processes described herein. In one embodiment, part or all of the control unit 2 may be included in the plasma processing apparatus 1. The control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The control unit 2 is implemented, for example, by a computer 2a. The processing unit 2a1 may be configured to perform various control operations by reading a program from the storage unit 2a2 and executing the read program. This program may be stored in the storage unit 2a2 in advance, or it may be obtained via a medium when needed. The obtained program is stored in the storage unit 2a2 and read from the storage unit 2a2 and executed by the processing unit 2a1. The medium may be various storage media readable by the computer 2a, or it may be a communication line connected to the communication interface 2a3. The processing unit 2a1 may be a CPU (Central Processing Unit). The storage unit 2a2 may include RAM (Random Access Memory), ROM (Read Only Memory), HDD (Hard Disk Drive), SSD (Solid State Drive), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing device 1 via a communication line such as a LAN (Local Area Network).

[0024] Figure 2 is a block diagram showing an example of the configuration of a pressure valve control device 50. The pressure valve control device 50 includes a communication unit 51, an opening degree calculation unit 52, a storage unit 53, and an opening degree control unit 54. A control unit 2 may have some or all of the components included in the pressure valve control device 50. In one embodiment, some or all of the functions performed by the components included in the pressure valve control device 50 may be performed by the control unit 2.

[0025] As described above, the storage unit 2a2 of the control unit 2 stores the program 2P (program product, computer program) executed by the processing unit 2a1. The program 2P may be read from a storage medium 2aa such as a memory card or optical disc and stored in the storage unit 2a2. The program 2P stored in the storage unit 2a2 includes a simulator that simulates the processes executed in the plasma processing apparatus 1. The storage unit 2a2 also stores recipe data 2R and an optimization model 2M for controlling each part of the plasma processing apparatus 1. The recipe data 2R includes, for example, the set values ​​(target values) of the processing gas parameters and the set values ​​of the pressure regulating valve 41 parameters. The processing gas parameters include the flow rate of the processing gas and the types of gases contained in the processing gas. The pressure regulating valve 41 parameters include the pressure in the plasma processing space 10s, the opening degree of the pressure regulating valve 41 and its holding time. Recipe data 2R also includes the setting values ​​of the source RF signal parameters in the etching process, the setting values ​​of the bias signal parameters (bias RF signal and bias DC signal), and the setting values ​​of the parameters of the second DC signal applied to the upper electrode. Recipe data 2R is input via a recipe editor displayed on, for example, the display unit of the plasma processing apparatus 1 or a display unit connected to the control unit 2, and stored in the storage unit 2a2.

[0026] An optimization model 2M is prepared for each recipe data 2R, and if the recipe data 2R includes multiple processing steps, an optimization model 2M is prepared for each processing step. The optimization model 2M is configured to take the set values ​​(target values) of the parameters included in the recipe data 2R as input and derive the optimal values ​​for those parameters. The optimization model 2M is prepared according to each element of the plasma processing apparatus 1 controlled by the control unit 2, and includes, for example, a pressure optimization model used for the pressure valve control device 50 (hereinafter referred to as the pressure model), a gas flow rate optimization model used for the gas supply unit 20, and an RF power optimization model used for the RF power supply 31. The pressure model takes as input the set values ​​of the parameters of the processing gas included in the recipe data (processing gas flow rate, gas type, etc.), the set values ​​of the parameters of the pressure regulating valve 41 (pressure inside the plasma processing chamber 10, or the opening degree and holding time of the pressure regulating valve 41, etc.), and measurement data of the opening degree of the pressure regulating valve 41 obtained when a process based on these set values ​​is executed, and outputs the optimal values ​​for the opening degree and holding time of the pressure regulating valve 41 to set the pressure inside the plasma processing chamber 10.

[0027] The optimization model 2M may be a pre-trained model that is trained to output the optimal value for a parameter when a parameter setting value (target value) is input. The pre-trained model is trained using the optimal value derived from experimental results or simulation results using the plasma processing device 1 for the parameter setting value. Alternatively, the optimization model 2M may be a table that records the optimal value derived from experimental results or simulation results using the plasma processing device 1 in relation to the parameter setting value, or a calculation formula that calculates the optimal value from the parameter setting value.

[0028] The processing unit 2a1 of the control unit 2 causes each element to perform an operation according to the recipe data 2R by outputting the parameter setting values ​​described in the recipe data 2R for each element to be controlled. For example, for the pressure valve control device 50, the processing unit 2a1 outputs the parameter setting values ​​(opening degree and holding time of the pressure regulating valve 41) described in the recipe data 2R. Furthermore, by using the optimization model 2M, the processing unit 2a1 can obtain optimal values ​​for the parameter setting values ​​described in the recipe data 2R, and by outputting the obtained optimal values ​​to each element to be controlled, it can cause each element to perform an operation based on the optimal values. Hereinafter, control based on the setting values ​​described in the recipe data 2R will be referred to as "control without using the optimization model 2M (no model application)," and control based on the optimal values ​​obtained using the optimization model 2M will be referred to as "control using the optimization model 2M (model application)." In this embodiment, it is possible to switch between control without using the optimization model 2M and control with the optimization model 2M, and the recipe data 2R specifies whether to perform control without using the optimization model 2M or control with the optimization model 2M. The processing unit 2a1 switches between performing control without using the optimization model 2M and control with the optimization model 2M according to the contents of the recipe data 2R.

[0029] The communication unit 51 of the pressure valve control device 50 receives measurement data of the pressure inside the plasma processing chamber 10 (inside the plasma processing space 10s) (hereinafter also referred to as chamber pressure) measured by a pressure sensor 60 provided at an appropriate location in the plasma processing chamber 10. The communication unit 51 can transmit the received chamber pressure measurement data to the control unit 2. The control unit 2 can store the chamber pressure measurement data received from the communication unit 51 in the storage unit 2a2. The control unit 2 may receive the chamber pressure measurement data from the pressure sensor 60 without going through the pressure valve control device 50, or the communication unit 51 may receive the chamber pressure measurement data via the control unit 2. The control unit 2 can collect the chamber pressure measurement data as measurement data indicating the operating state of the plasma processing device 1.

[0030] The communication unit 51 may be an interface configured to communicate between the pressure valve control device 50 and the control unit 2. The communication unit 51 receives control data output from the control unit 2 (setting values ​​of parameters described in the recipe data 2R, or optimal values ​​of parameters obtained using a pressure model). The communication unit 51 stores the control data received from the control unit 2 (target values ​​for the opening degree and holding time of the pressure regulating valve 41) in the storage unit 53. The communication unit 51 may also transmit the control data received from the control unit 2 to the opening degree calculation unit 52.

[0031] The communication unit 51 can receive opening degree data from the pressure regulating valve 41 regarding the opening degree of the pressure regulating valve 41. The communication unit 51 may store the opening degree data received from the pressure regulating valve 41 in the storage unit 53, or transmit it to the opening degree calculation unit 52. The opening degree calculation unit 52 reads the opening degree data stored in the storage unit 53, or receives opening degree data from the communication unit 51. The opening degree calculation unit 52 reads the control data stored in the storage unit 53, or receives control data from the communication unit 51. Based on the target values ​​of the opening degree and holding time of the pressure regulating valve 41 indicated by the acquired control data, the opening degree calculation unit 52 calculates the control value and control timing for the pressure regulating valve 41. The opening degree calculation unit 52 calculates the difference between the target value of the opening degree of the pressure regulating valve 41 and the acquired opening degree data, and calculates the control value and control timing for the pressure regulating valve 41 based on the calculated difference value. The opening degree calculation unit 52 transmits the calculated control value and control timing to the opening degree control unit 54, and the opening degree control unit 54 controls the opening degree of the pressure regulating valve 41 based on the control value and control timing calculated by the opening degree calculation unit 52.

[0032] The communication unit 51 can transmit the opening degree data received from the pressure regulating valve 41 to the control unit 2. The control unit 2 can store the opening degree data received from the communication unit 51 in the storage unit 2a2. The control unit 2 may also receive the opening degree data from the pressure regulating valve 41 without going through the pressure valve control device 50. In this case, the control unit 2 can collect the opening degree data indicating the opening degree of the pressure regulating valve 41 as measurement data indicating the operating state of the plasma processing apparatus 1.

[0033] The following describes the process by which the control unit 2 selects whether to perform control without using a pressure model (optimization model 2M) or control with a pressure model when controlling the pressure valve control device 50, and records this selection in the recipe data 2R. Figure 3 is a flowchart showing an example of the selection process procedure between control without a pressure model and control with a pressure model, and Figure 4 is an explanatory diagram showing an example of the recipe editor screen.

[0034] The processing unit 2a1 of the control unit 2 performs the following processing for each processing step included in the process performed by the plasma processing apparatus 1. First, the processing unit 2a1 receives recipe data (S11). The processing unit 2a1 displays a recipe editor, as shown in Figure 4, on the display unit of the plasma processing apparatus 1 or on a display unit connected to the control unit 2, and receives recipe data input via the recipe editor. The recipe editor in Figure 4 is configured to allow input of various parameter settings for the plasma processing apparatus 1, such as step completion conditions, step processing time, chamber pressure, and the opening and holding time of the pressure regulating valve 41, for each processing step. Figure 4 shows the state in which recipe data for processing step 2 has been input.

[0035] When the processing unit 2a1 receives recipe data, it extracts the parameter settings (setting conditions) described in the input recipe data (S12). Here, the processing unit 2a1 extracts the setting values ​​for the opening degree and holding time of the pressure regulating valve 41 from the recipe data. Using the pressure model, the processing unit 2a1 calculates the optimal values ​​for the opening degree and holding time (updated conditions with updated setting conditions) based on the extracted setting values ​​for the opening degree and holding time (S13). For example, the processing unit 2a1 inputs the setting values ​​for the parameters of the processed gas included in the recipe data (processing gas flow rate, gas type, etc.) and the setting values ​​for the opening degree and holding time extracted from the recipe data into the pressure model, and calculates the optimal values ​​for the opening degree and holding time of the pressure regulating valve 41 using the pressure model.

[0036] The processing unit 2a1 uses the simulator included in program 2P to simulate the chamber pressure (operating state of the plasma processing device 1) when the opening degree and holding time of the pressure regulating valve 41 are controlled based on the set values ​​extracted in step S12 (S14), and obtains the simulation result (first simulation result). In this simulation, when the opening degree of the pressure regulating valve 41 is set to a set value (target value), the time until the change in chamber pressure begins, the time until the chamber pressure reaches the set value, the time until the chamber pressure stabilizes near the set value, the amount of upward deviation exceeding the set value before the chamber pressure stabilizes near the set value, and the amount of downward deviation after exceeding the set value fall below the set value are obtained as simulation results. Similarly, the processing unit 2a1 simulates the chamber pressure when the opening degree and holding time of the pressure regulating valve 41 are controlled based on the optimal value calculated in step S13 (S15), and obtains the simulation result (second simulation result).

[0037] The processing unit 2a1 displays the simulation results obtained in steps S14 and S15 on the recipe editor's display screen (S16). The screen in Figure 4 displays the simulation results for the processing step in step 2, and displays the simulation results as a graph with the processing time from the start of the process on the horizontal axis and the chamber pressure on the vertical axis. In the graph in Figure 4, the simulation results based on the set values ​​(simulation results without model application) are shown as a solid line, and the simulation results based on the optimal values ​​(simulation results with model application) are shown as a dashed line. The screen in Figure 4 also displays the set values ​​(control values ​​without model application) and the optimal values ​​(control values ​​with model application) in comparison. This makes it possible to present the simulation prediction results of the processing results (chamber pressure) when the process is performed based on the set values ​​of the recipe data and the processing results (chamber pressure) when the process is performed based on the optimal values ​​obtained using the pressure model.

[0038] The screen in Figure 4 has an input field for feedback conditions indicating whether to perform control without using the pressure model (optimization model 2M) or control using the pressure model in the processing step of step 2. Specifically, there are checkboxes to select one of the following: perform control without using the pressure model (do not apply the model), perform control using the pressure model (apply the model), or automatically determine whether or not to use the pressure model. The user checks the two simulation results and decides which simulation result is more appropriate, and then decides whether to perform control without using the pressure model or control using the pressure model. If control using the pressure model is selected, there are checkboxes to select one of the following as the feedback unit: per wafer, per lot, or per arbitrary number of wafers. Furthermore, if per arbitrary number of wafers is selected, there is an input field to accept input for the number of wafers. With this configuration, in the processing step of performing control using the pressure model, it is possible to accept the number of wafers that defines the update timing of the control data output to the pressure valve control device 50.

[0039] The processing unit 2a1 receives feedback conditions via the input field on the screen in Figure 4 (S17). Based on the received feedback conditions, the processing unit 2a1 determines whether automatic determination is selected (S18). If it determines that automatic determination is not selected (S18: NO), it determines whether control using a pressure model (model application enabled) is selected (S19). If it determines that control using a pressure model is selected (S19: YES), the processing unit 2a1 records the received feedback unit in the recipe data or parameters (labeled as "recipe" in Figure 3) (S20), and records the model information of the pressure model (e.g., model number) in the recipe data or parameters (labeled as "recipe" in Figure 3) (S21). In the example in Figure 4, "1" is written as the model number of the pressure model, and "per lot" is written as the feedback unit in the recipe data or parameters.

[0040] If it is determined that control using a pressure model is not selected (S19: NO), that is, if control without a pressure model is selected, the processing unit 2a1 skips steps S20 to S21 and terminates processing. In this case, the processing unit 2a1 may specify in the recipe data that control without a pressure model will be performed.

[0041] If it is determined that automatic determination has been selected (S18: YES), the processing unit 2a1 calculates the degree of appropriateness to the target value in the simulation results based on the set value and the simulation results based on the optimal value (S22). For example, the processing unit 2a1 calculates the degree of appropriateness for each simulation result such that the shorter the time until the change in chamber pressure begins, the shorter the time until the chamber pressure reaches the set value, the shorter the time until the chamber pressure stabilizes near the set value, and the smaller the amount of upward and downward deviation from the set value until the chamber pressure stabilizes near the set value, the higher the degree of appropriateness.

[0042] The processing unit 2a1 decides whether or not to apply the pressure model based on its appropriateness to the target value (S23). The processing unit 2a1 identifies a simulation result with a high degree of appropriateness to the target value. If the identified simulation result is based on the optimal value, it decides to apply the pressure model, i.e., to use control that utilizes the pressure model. If the identified simulation result is based on the set value, the processing unit 2a1 decides not to apply the pressure model, i.e., to use control that does not utilize the pressure model. The processing unit 2a1 then proceeds to step S19. If it decides to apply the pressure model (S19: YES), it performs the processing in steps S20 to S21. The feedback unit here may be, for example, a predetermined unit set by default (e.g., per lot). If it decides not to apply the pressure model (S19: NO), the processing unit 2a1 terminates the process.

[0043] By the above-described process, when creating recipe data, it is possible to present the result of simulation based on the set values of the parameters described in the recipe data and the result of simulation based on the optimal values calculated from the set values using the optimization model 2M. Therefore, the creator of the recipe data can select whether to perform control without using the optimization model 2M or to perform control using the optimization model 2M based on the two simulation results. Since the creator can easily predict the control result by checking the two simulation results, the anxiety about the execution result of the process can be reduced. Also, when the creator selects automatic determination, the control unit 2 determines whether to perform control using the optimization model 2M based on the two simulation results and the degree of appropriateness with respect to the target value. Thereby, based on the two simulation results, when the plasma processing apparatus 1 executes the process, it is possible to switch between performing control without using the optimization model 2M and performing control using the optimization model 2M. The control unit 2 specifies whether to use the optimization model 2M for each processing step included in the process by performing the process of FIG. 3 for each processing step. The recipe data created by the above-described process is stored in the storage unit 2a2.

[0044] Whether to use the optimization model 2M or not is described in the recipe data by the above-described process. Hereinafter, the process of the control unit 2 controlling the pressure valve control device 50 based on such recipe data will be described. FIG. 5 is a flowchart showing an example of the procedure of the process of the control unit 2 controlling the pressure valve control device 50.

[0045] The processing unit 2a1 of the control unit 2 performs the following processing for each processing step included in the process performed by the plasma processing apparatus 1. Here, we will explain the processing performed by the processing unit 2a1 in the pressure control step in which the processing unit 2a1 controls the pressure valve control device 50. The processing unit 2a1 reads the setting values ​​of the parameters in the pressure control step from the recipe data (S31). For example, the processing unit 2a1 reads the setting values ​​of the opening degree and holding time of the pressure regulating valve 41. The processing unit 2a1 determines whether or not to perform control using the optimization model 2M (pressure model) for this pressure control step (model application) (S32). The recipe data contains information on whether or not to use the optimization model 2M for each processing step, and the processing unit 2a1 determines whether or not to perform control using the optimization model 2M from the contents of the recipe data.

[0046] If it is determined that control using the optimization model 2M will not be performed (S32: NO), the processing unit 2a1 outputs the setting values ​​(setting values ​​for the opening degree and holding time of the pressure regulating valve 41) read from the recipe data in step S31 to the pressure valve control device 50 (S33). The pressure valve control device 50 controls the opening degree and holding time of the pressure regulating valve 41 based on the setting values ​​obtained from the control unit 2 and executes a process (pressure control step) according to the recipe data. The pressure valve control device 50 executes the pressure control step with the same setting conditions according to the recipe data for, for example, a specified lot number of substrates (wafers).

[0047] When it is determined to perform control using the optimization model 2M (S32: YES), the processing unit 2a1 reads out the feedback unit described in the recipe data (S34). The processing unit 2a1 calculates an optimum value (optimum values of the opening degree and holding time of the pressure control valve 41) using the optimization model 2M (pressure model) from the set value read out in step S31 (S35). For example, the processing unit 2a1 inputs the set value of the parameters of the processing gas (flow rate of the processing gas, gas type, etc.) included in the recipe data and the set value (set values of the opening degree and holding time of the pressure control valve 41) read out in step S31 into the pressure model, and obtains the optimum values of the opening degree and holding time of the pressure control valve 41 from the pressure model. The processing unit 2a1 outputs the calculated optimum value (optimum values of the opening degree and holding time of the pressure control valve 41) to the pressure valve control device 50 (S36). Thereby, the pressure valve control device 50 controls the opening degree and holding time of the pressure control valve 41 based on the optimum value acquired from the control unit 2, and executes a process (pressure control step) according to the optimum value. Note that the pressure valve control device 50 executes the pressure control step under the same set conditions according to the optimum value here for the number of substrates (wafers) indicated by the feedback unit.

[0048] The processing unit 2a1 acquires the opening degree data output by the pressure control valve 41 during the execution of the pressure control step based on the optimum value (S37), and acquires the measurement data of the chamber pressure measured by the pressure sensor 60 (S38). The processing unit 2a1 stores the acquired opening degree data and the measurement data of the chamber pressure as log data in the storage unit 2a2. The processing unit 2a1 determines whether or not the execution of the processing of the pressure control step has ended for the number of wafers indicated by the feedback unit (S39). When it is determined that the execution has not ended (S39: NO), the process returns to step S37, and the acquisition of the opening degree data and the measurement data of the chamber pressure measured during the execution of the pressure control step for each wafer is continued.

[0049] If the processing unit determines that it has finished executing the pressure control step for the number of wafers indicated by the feedback unit (S39: YES), the processing unit 2a1 determines whether it has finished the pressure control step for, for example, a specified lot number of wafers (S40). If it determines that it has not finished (S40: NO), it returns to step S35. Then, the processing unit 2a1 uses the pressure model to calculate the next optimal value (optimal value for the opening degree and holding time of the pressure regulating valve 41) from the set value in the most recently executed pressure control step (optimal value calculated in the most recently executed step S35) (S35). Here, the processing unit 2a1 inputs the set values ​​of the processing gas parameters included in the recipe data (processing gas flow rate, gas type, etc.) and the set values ​​in the most recently executed pressure control step (set values ​​for the opening degree and holding time of the pressure regulating valve 41) into the pressure model to obtain the next optimal value from the pressure model.

[0050] The processing unit 2a1 may obtain the following optimal value using a pressure model, based on the setting value of the processing gas parameters included in the recipe data and the setting value in the most recently executed pressure control step, as well as the opening degree data or chamber pressure measurement data acquired during the execution of the most recently executed pressure control step. Alternatively, instead of the opening degree data acquired during the execution of the most recently executed pressure control step, the processing unit 2a1 may obtain the following optimal value based on the difference between the opening degree data and the setting value in the pressure control step (the target value of the opening degree of the pressure regulating valve 41).

[0051] The processing unit 2a1 performs the processing from step S36 onward based on the newly calculated optimal values. This enables the execution of pressure control steps based on the newly obtained optimal values ​​(optimal values ​​for the opening degree and holding time of the pressure regulating valve 41) using the pressure model. Therefore, pressure control steps based on the newly calculated optimal values ​​are executed for the wafers to be processed in subsequent processes. Each time the pressure control steps for a given number of wafers in a feedback unit are completed, the processing unit 2a1 outputs the updated optimal values ​​to the pressure valve control device 50, thereby enabling the execution of pressure control steps with updated parameter settings for each feedback unit. When the processing unit 2a1 determines that it has completed the pressure control steps for a specified number of wafers (S40: YES), it terminates the process.

[0052] Through the process described above, each time a processing step (e.g., pressure control step) is completed for the number of wafers indicated by the feedback unit, a new setting value (optimal value) is set, and subsequent processing steps for wafers are executed based on the set optimal value. For example, if each wafer is selected as the feedback unit, the processing unit 2a1 calculates the next setting value (new optimal value) each time a processing step is performed for one wafer, and performs the processing step for the next wafer based on the calculated setting value. Similarly, if each lot is selected as the feedback unit, the processing unit 2a1 calculates the next setting value (new optimal value) each time a processing step is performed for wafers set in a lot (e.g., 25 wafers), and performs the processing step for the wafers of the next lot based on the calculated setting value. If an arbitrary number of wafers is specified as the feedback unit, the processing unit 2a1 calculates the next setting value (new optimal value) each time a processing step is performed for the specified number of wafers, and performs the processing step for subsequent wafers based on the calculated setting value.

[0053] In the process described above, the processing unit 2a1 collects opening degree data indicating the opening degree of the pressure regulating valve 41 and chamber pressure measurement data during the execution of the pressure control step. The processing unit 2a1 uses the opening degree data or chamber pressure measurement data acquired during the execution of the pressure control step to update the setting value to be used in the pressure control step performed on the next (subsequent) wafer (to obtain the optimal value). For example, the processing unit 2a1 calculates the average value of the opening degree data of the pressure regulating valve 41 acquired during the execution of the pressure control step for the number of wafers indicated by the feedback unit (e.g., per wafer, per lot, per predetermined number of wafers) and stores it in the storage unit 2a2 as log data. The opening degree data is time-series data of the opening degree output from the pressure regulating valve 41 at predetermined timings (at predetermined time intervals), and the average value of the opening degree data is the average value of the opening degree at each timing in the multiple pressure control steps indicated by the feedback unit, and is time-series data of the average opening degree.

[0054] Furthermore, the processing unit 2a1 calculates the average value of the chamber pressure measurement data acquired during the execution of the pressure control step for the number of wafers indicated by the feedback unit and stores it in the storage unit 2a2 as log data. The chamber pressure measurement data is time-series data of measurements acquired by the pressure sensor 60 at each measurement timing (at predetermined time intervals), and the average value of the measurement data is the average value of the measurements taken at each measurement timing in the multiple pressure control steps indicated by the feedback unit, and is time-series data of the average value of the measurements. Note that if each wafer is specified as the feedback unit, the processing unit 2a1 does not calculate the average value of the opening degree data and the chamber pressure measurement data, but stores the opening degree data and the chamber pressure measurement data acquired during the execution of the pressure control step for one wafer in the storage unit 2a2. Based on the average value of the opening degree data or the average value of the chamber pressure measurement data in the number of pressure control steps of the feedback unit, the setting value of the processing gas parameter, and the setting value of the pressure regulating valve 41 parameter, the processing unit 2a1 updates the setting values ​​to be used in subsequent pressure control steps for wafers. This allows for further optimization of the setpoints used in subsequent pressure control steps, using measurement data that shows the results of executing a pressure control step based on the optimal parameter values ​​obtained using the pressure model.

[0055] In the above-described embodiment, the process by which the control unit 2 controls the pressure valve control device 50 was explained. Below, the process by which the control unit 2 controls the RF power supply 31 will be explained. Figure 6 is a diagram illustrating the process by which the control unit 2 controls the RF power supply 31. The memory unit 2a2 of the control unit 2 shown in Figure 6 stores an RF power optimization model (hereinafter referred to as the RF power model) used for the RF power supply 31 as the optimization model 2Ma. The RF power model takes the set values ​​of the processing gas parameters (processing gas flow rate, gas type, etc.) included in the recipe data and the set values ​​of the RF power supply 31 parameters (RF power) as inputs, and outputs the optimal value of the RF power to set the RF power to the set value and the optimal value of the control value for the impedance matching circuit provided between the RF power supply 31 and the plasma processing chamber 10. The control value for the impedance matching circuit is, for example, a value indicating the position of the VC (Variable Capacitor) for adjusting the capacitance value of the capacitor.

[0056] The recipe data for the power control step in which the control unit 2 controls the RF power supply 31 specifies whether to perform control without using the RF power model (optimized model 2Ma) or control using the RF power model. Such recipe data can be generated by the control unit 2 performing the same process as shown in Figure 3. The control unit 2 performs the process shown in Figure 3 for the power control step in which the control unit 2 controls the RF power supply 31. The control unit 2 can also perform the same process as shown in Figure 5, and by performing the same process as shown in Figure 5 for the power control step, it is possible to implement a process that controls the RF power supply 31 based on such recipe data, either by control without using the RF power model or by control using the RF power model.

[0057] In the embodiments described above, a configuration in which the control unit 2 controls the pressure valve control device 50 according to recipe data and a configuration in which it controls the RF power supply 31 were explained, but the controlled objects are not limited to these. For example, similar control is possible for the flow rate controller 22 of the gas supply unit 20 by using a gas flow rate model. Similarly, similar control is possible for the temperature control module provided in the substrate support unit 11, for example, if an optimization model is available to optimize the control values ​​for the ESC (Electric Static Chuck) temperature control unit. In this way, similar control is possible for elements of the plasma processing apparatus 1 for which an optimization model is available to optimize the control values ​​when controlling each element.

[0058] The embodiments disclosed herein should be considered in all respects to be illustrative and not restrictive. The scope of this disclosure is indicated by the claims, not in the sense described above, and all modifications within the sense and scope equivalent to the claims are intended.

[0059] In this embodiment, an example of application to a capacitively coupled plasma processing apparatus 1 has been described, but it is not limited to capacitive coupling and can be applied to any type of plasma processing apparatus, including Inductively Coupled Plasma (ICP), Radial Line Slot Antenna (RLSA), Electron Cyclotron Resonance Plasma (ECR), and Helicon Wave Plasma (HWP).

[0060] The independent and dependent claims described in the claims can be combined with each other in any combination, regardless of the form of reference. Furthermore, while the claims use a multi-claim format in which claims refer to two or more other claims (multi-claim format), this is not the only way to do so. A multi-claim format in which at least one multi-claim is referenced (multi-multi-claim format) may also be used.

[0061] 1 Plasma processing apparatus 2 Control unit 2a1 Processing unit 2a2 Memory unit 2a3 Communication interface 20 Gas supply unit 30 Power supply 40 Exhaust system 41 Pressure regulating valve 50 Pressure valve control device 51 Communication unit 52 Opening degree calculation unit 53 Memory unit 54 Opening degree control unit

Claims

1. An information processing method in which a computer performs the following steps: acquire setting conditions for a process performed by a substrate processing apparatus; use a model that derives updated conditions by updating the setting conditions for the process; acquire updated conditions by updating the acquired setting conditions; obtain a first simulation result showing the operating state of the substrate processing apparatus when the process based on the setting conditions is performed, and a second simulation result showing the operating state of the substrate processing apparatus when the process based on the updated conditions is performed, and output the acquired first and second simulation results.

2. The information processing method according to claim 1, wherein the computer outputs the first simulation result and the second simulation result to a display unit, and performs a process to accept the selection of the setting condition or the update condition as a condition to be used in the process.

3. The information processing method according to claim 1, wherein the computer performs a process of selecting either the setting condition or the update condition as a condition to be used in the process, based on the first simulation result and the second simulation result.

4. The information processing method according to claim 3, wherein the computer performs a process to select either the setting conditions or the update conditions based on the calculated appropriateness for each of the first simulation results and the second simulation, and calculates the degree of appropriateness of the operating state of the substrate processing apparatus with respect to the target value when the process based on the setting conditions is performed.

5. The information processing method according to any one of claims 1 to 4, wherein the computer performs a process to output the first simulation result and the second simulation result for each of the multiple processing steps included in the process.

6. The information processing method according to any one of claims 2 to 4, wherein, if the update condition is selected as a condition to be used in the process, the computer performs a process to add to the setting conditions of the process that the model for deriving the update condition be used.

7. The information processing method according to claim 2, wherein the computer performs a process of comparing the setting conditions and the update conditions and outputting them to the display unit.

8. An information processing method according to any one of claims 1 to 4, wherein the computer performs a process of instructing the substrate processing apparatus to execute a process based on the setting conditions, acquiring measurement data indicating the operating state of the substrate processing apparatus that has executed the process, and acquiring updated conditions by updating the setting conditions using the model based on the setting conditions used in the process and the acquired measurement data.

9. The information processing method according to any one of claims 2 to 4, wherein, when the update conditions are selected as conditions to be used in the process, the computer performs a process to update the setting conditions used in the process for each substrate or lot on which the substrate processing apparatus performs the process.

10. The information processing method according to claim 9, wherein the computer performs a process to accept the number of boards that define the timing for updating the setting conditions.

11. An information processing device having a control unit, wherein the control unit acquires setting conditions for a process performed by a substrate processing device, acquires updated conditions by using a model that derives updated conditions for the process setting conditions, acquires first simulation results showing the operating state of the substrate processing device when a process based on the setting conditions is performed, and second simulation results showing the operating state of the substrate processing device when a process based on the updated conditions is performed, and outputs the acquired first and second simulation results.

12. A computer program that causes a computer to execute a process to obtain the setting conditions for a process performed by a substrate processing apparatus, obtain updated conditions by using a model that derives updated conditions by updating the setting conditions, obtain a first simulation result showing the operating state of the substrate processing apparatus when the process based on the setting conditions is performed, and a second simulation result showing the operating state of the substrate processing apparatus when the process based on the updated conditions is performed, and output the obtained first and second simulation results.

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