Thermal switch

Abstract

The invention relates to a thermal switch for temperature-dependent heat conduction, the thermal switch comprising a housing, the housing comprising a first housing part, a second housing part, a flexible support element connected to the first housing part, and a contact element connected to the support element, wherein a contact surface is formed by the second housing part, wherein, in a first state, the contact element is separated from the contact surface such that the first housing part and the second housing part are thermally isolated, and wherein, in a second state, the contact element is connected to the contact surface such that the first housing part and the second housing part are thermally connected.

Description

[0001] DLR...

[0002] Heat switch

[0003] The present invention relates to a heat switch for temperature-dependent heat conduction.

[0004] Achieving extremely low temperatures, often close to absolute zero (-273.15 °C or 0 K), plays a crucial role in modern technologies. Superconducting circuits and quantum computers are examples of applications where extremely low temperatures below 20 K are required to ensure optimal operating conditions. Therefore, novel cooling technologies are a critical enabling technology for modern applications of quantum physics in quantum computers, quantum sensors, and other advanced technologies.

[0005] Similarly, gas liquefaction is one of the key technologies for building a hydrogen infrastructure in Germany, which is seen as the foundation for Germany's climate neutrality. A temperature of -20K is necessary for hydrogen liquefaction, so efficient and scalable cooling devices must be developed.

[0006] Cooling devices are based on the Carnot process, in which a cooling medium absorbs and releases heat through external stimulation. A heat exchanger or thermal switch establishes a thermal connection to an external heat reservoir precisely when the cooling medium releases heat and closes the connection as soon as the medium absorbs heat. This circuit ensures that heat is constantly pumped from the cooling medium to the heat reservoir, and the cooling device lowers the temperature of the area in contact with the cooling medium. Therefore, in addition to the cooling medium, the heat exchanger or thermal switch is an integral component of cooling technologies. For temperatures below 100K, thermal switches can be implemented using the following technologies:

[0007] Active thermal switches: o Superconducting thermal switches: For the range below IOK,

[0008] Materials like Zn, Al, In, Sn, and Pb conduct very little heat because they are superconducting, meaning heat conduction is dominated by lattice vibrations. Once the temperature exceeds a critical temperature or magnetic field strength, superconductivity is broken, and heat can be efficiently transported via charge carriers. This technology is not applicable above the intercooler (IC) because thermal conductivity due to lattice vibrations is high, and therefore the OFF state still exhibits high thermal conductivity. Magnetoresistive thermal switches: The generation of strong magnetic fields creates strong eddy currents in elemental metals, which reduce thermal conductivity. A thermal switch can be implemented by switching magnetic fields on and off. However, this requires strong magnetic fields of several Tesla, which can usually only be generated by superconducting coils.This requires an enormous amount of energy and makes it impossible to use heat switches in magnetic field-sensitive devices (quantum technologies, spin qubits).

[0009] Passive thermal switches (switching occurs automatically when the switching temperature is exceeded / fall below the set point) o Evaporator-condenser switch (VC): Due to the evaporation and condensation of gases at different interfaces, heat can only flow in one direction. However, since a phase transition is used, the switching temperature is difficult or impossible to adjust. In the cryogenic range below 100 K, there are therefore only 3 temperature levels: 77 K (liquefaction of nitrogen), 22 K (liquefaction of hydrogen), 4.2 K (liquefaction of helium). For this reason, it is not possible to change the switching temperature to switch alternative temperatures. o Differential thermal expansion (DTA) thermal switches: In

[0010] The structure uses a load-bearing framework with low thermal conductivity. A material with high thermal conductivity and thermal expansion is placed in the spaces between the layers. Upon cooling, the thermally conductive layer contracts, leaving only contact through the low-thermal-conductivity framework. However, the thermal expansion of materials below 100 K is very low, in the range of 0.1 K. 5 until 10' 6 / K. Therefore, either large structures must be used to achieve sufficient contraction during temperature changes, or the circuit must lack a sharp temperature transition. For this reason, the entire switch has a high heat capacity and a slow switching time.

[0011] The current state of the art therefore includes active thermal switches, which either require strong magnetic fields of several Tesla or only function below a certain electrical resistance (IOC). Passive thermal switches, which have lower energy consumption, also have disadvantages. For this reason, the use of thermal switches for mobile devices or industrial applications in the range below 70K is very inefficient. With the current state of the art, it is therefore not possible to realize a miniaturized or on-chip passive thermal switch for the 10-100K range.

[0012] The object of the present invention is to provide a heat switch which overcomes the disadvantages of the prior art.

[0013] The problem is solved by a thermal switch according to claim 1. The thermal switch according to the present invention for temperature-dependent heat conduction has a housing with a first housing part and a second housing part. A flexible support element is connected to the first housing part. A contact element is connected to the support element and is preferably formed integrally. Furthermore, a contact surface is formed by the second housing part. In a first state, the contact element is separated from the contact surface, so that the first housing part and the second housing part are thermally separated. In a second state, the contact element is connected to the contact surface or rests against the contact surface, so that the first housing part and the second housing part are thermally connected. Thus, in the first state, heat conduction between the first housing part and the second housing part is precisely prevented.In the second state, contact between the contact element and the contact surface enables heat conduction from the first housing part to the second housing part, or vice versa. Thus, heat can be transferred by thermal conduction from the first housing part, via the support part and the contact element, to the contact surface of the second housing part, or vice versa. Therefore, the thermal conductivity of the thermal switch is controlled by establishing or breaking the mechanical contact between the contact element and the contact surface, thus providing a thermal switch function. In particular, the transition from the non-thermally conductive first state to the thermally conductive second state can occur abruptly as soon as the contact element comes into contact with the contact surface.Furthermore, the design of the heat switch is simple and can be miniaturized, so that it can be integrated into electronic circuits or on-chip cryostats.

[0014] Preferably, this is a passive thermal switch which, upon reaching a limit temperature, moves the contact element from the first state to the second state or vice versa, without requiring any additional action. In particular, no active components are needed to switch the thermal switch and thereby transition it from a thermally conductive state to a non-thermally conductive state or vice versa.

[0015] Preferably, the switching of the thermal switch is temperature-dependent. In particular, a limit temperature can be defined by the design of the thermal switch and / or the appropriate choice of material, so that when this limit temperature is reached / exceeded, the thermal switch moves from its first state to the second state, or vice versa.

[0016] Preferably, the support element is pre-tensioned in the direction of the first state. Thus, in the normal state, the support element is configured such that the contact element is separated from the contact surface. Alternatively, the support element is pre-tensioned in the direction of the second state, so that in the normal state the contact element is connected to the contact surface and heat can be conducted from the first housing part to the second housing part or vice versa. Alternatively, the support element is configured as a bistable support element, which is pre-tensioned in both the first and second states. This is particularly a bistable compliant switch mechanism.The carrier element thus forms a snap mechanism, whereby the carrier element snaps from the first state to the second state when a suitable force or tension is applied to it. If a corresponding tension is then applied to the carrier element in the direction of the second state, the carrier element snaps back into the second state. This allows for a fast switching speed of the passive thermal switch. Preferably, the carrier element is designed as a metal strip. This allows the carrier element to be designed as a bending beam, so that a suitable tension can be applied to the carrier element. Alternatively, the carrier element can be a disc-shaped element that partially, and preferably completely, surrounds the contact element.In particular, the disc-shaped element can be made of metal. Specifically, the disc-shaped element can be designed as a spring washer, whereby the spring washer generates a preload on the contact element in the direction of the contact surface or in the opposite direction. In particular, the disc-shaped element or the metal strip can be designed as a sheet metal component.

[0017] Preferably, exactly one carrier element is provided. Alternatively, more than one carrier element is provided, preferably with all carrier elements being identical or at least two carrier elements being designed differently. This allows the switching behavior and, in particular, the limit temperature at which the contact element moves from the first state to the second state or vice versa to be adapted.

[0018] In particular, the voltage or force applied to the carrier element is temperature-dependent. Therefore, temperature-dependent switching occurs.

[0019] Preferably, the support element has at least two layers, the layers being made of different materials. In particular, the materials have different coefficients of thermal expansion, preferably in the range of 100 K or less, and especially preferably in the range of 5 K to 100 K. Thus, the support element can be formed by a bimetallic element, provided the layers are made of a metal or a metal alloy. At a predetermined limit temperature, a sufficiently high stress is generated due to the different coefficients of thermal expansion to move the support element from the first state to the second state or vice versa. This is therefore a passive thermal switch that requires no additional components and can thus be designed to be particularly compact.The shape, thickness of the individual layers, and materials of the support element can be adapted in such a way that the differential thermal expansion of the layers of the support element at the desired predetermined switching temperature builds up a sufficiently high voltage to move the support element from the first state to the second state or vice versa.

[0020] Preferably, the support element is designed to deform when the temperature changes, particularly due to the different coefficients of thermal expansion. This deformation generates mechanical stress in the support element, causing it to move from the first state to the second state, or vice versa, when a limit temperature is exceeded or fallen below.

[0021] Preferably, the support element comprises a copper layer (Cu) and an indium layer (In), since copper exhibits only low thermal expansion below 100 K, while indium continues to exhibit high thermal expansion. Other material pairings are, of course, also possible. For example, the layers of the support element could be SiC and Si, materials that are accessible to conventional semiconductor manufacturing processes.

[0022] Preferably, the support element comprises a magnetostrictive material. In particular, the support element can have at least one layer of a magnetostrictive material or more than one layer, wherein the change in length due to the magnetostriction differs. Thus, when a magnetic rock is applied, a deformation of the support element is caused, so that the contact element is moved from the first state to the second state or vice versa. In particular, the material is a rare earth element, such as Tb or Dy, an alloy of rare earth elements, such as TbFez, SmFez, Terfenol-D, Samfenol-D, Invar, or the like. In particular, the passive thermal switch additionally comprises a switchable magnet, in particular an electromagnet, for generating the magnetic field, so that when the electromagnet is activated, the thermal switch is activated.In particular, the switching temperature can be selected independently of the material of the carrier element. Even small magnetic field strengths are sufficient to achieve a sufficient change in length due to magnetostriction, which triggers the switching of the thermal switch.

[0023] Preferably, the carrier element comprises or consists of a material that undergoes a transition from a ferromagnetic state to a paramagnetic state at a specific temperature threshold. Alternatively or additionally, the contact element itself comprises or consists of a material that undergoes a transition from a ferromagnetic state to a paramagnetic state at a specific temperature threshold. The temperature threshold can be determined by selecting the appropriate material. Furthermore, the thermal switch can incorporate a magnetic field. A magnetic force is exerted on the carrier element and / or the contact element when the carrier element or the contact element is in its ferromagnetic state. This magnetic force can switch the thermal switch, i.e., move the contact element from the first state to the second state, or vice versa.In particular, the carrier element comprises only one layer. Preferably, an electromagnet is provided for selectively generating the magnetic field. Alternatively, a permanent magnet is provided, so that the magnetic field is always present and the switching is determined solely by the transition of the carrier element and / or contact element material from a paramagnetic state to a ferromagnetic state or vice versa. Preferably, the material is a rare earth element and / or rare earth alloy such as EuSe with a limiting temperature of approximately 23 K, EuTe with a limiting temperature of approximately 20–30 K, GdP with a limiting temperature of approximately 30 K, CeFez or CeFezAlx with a limiting temperature of 40–50 K, or GdN with a limiting temperature of approximately 50 K.

[0024] In particular, the aforementioned types of circuits for the thermal switch can be freely combined to mutually reinforce the switching and / or to specifically adapt the circuit to a desired limit temperature.

[0025] Preferably, the first and second housing parts are connected by a thermal insulation element. This thermal insulation element suppresses or reduces direct heat conduction from the first to the second housing part. The thermal insulation element can be made of cryogenically compatible materials such as polyamide. Efficient heat conduction from the first to the second housing part, or vice versa, thus occurs only via the contact element and the contact surface, provided these are in mechanical contact.

[0026] Preferably, the thermal conductivity from the first housing part to the second housing part or vice versa in the second state is greater by a factor of 10 or more, and in particular by a factor of 100 or more, than in the first state when the contact element is separated from the contact surface.

[0027] Preferably, the first and second housing parts form a chamber, with the contact element arranged within this chamber. In particular, the chamber can be vacuum-sealed, thus preventing heat conduction via a gas from the first to the second housing part or vice versa. Simultaneously, the chamber provides mechanical protection for the contact element and the support element, enabling the passive thermal switch to be integrated into mobile applications.

[0028] Preferably, the first housing part is U-shaped, with the chamber being formed by this U-shaped first housing part. Furthermore, the support element extends within the U-shaped first housing part. Preferably, the support element extends between the legs of the U-shaped first housing part. The support element thus has two connection points with the first housing part, so that a suitable voltage can be easily generated by the support element to move it from the first state to the second state or vice versa. The second housing part is planar. This creates a simple structure for the passive thermal switch, which can be miniaturized.

[0029] Preferably, when a limit temperature is exceeded, the contact element, particularly at the support element, is moved from the first state to the second state. Conversely, when this limit temperature is undershot, the support element is moved back from the second state to the first state. Thus, if the temperature at the first housing element, and especially at the support element, rises above the limit temperature, a suitable voltage is generated at the support element, which moves the contact element from the first state to the second state. If the temperature then falls below the limit temperature, a voltage is again generated in the support element to move the contact element back from the second state to the first state.

[0030] Preferably, when a critical temperature is undershot, the contact element, particularly at the support element, is moved from the first state to the second state. Conversely, when this critical temperature is exceeded, the support element is moved back from the second state to the first state. Thus, if the temperature at the first housing element, and especially at the support element, falls below the critical temperature, a suitable voltage is generated at the support element, which moves the contact element from the first state to the second state. If the temperature then rises above the critical temperature, a voltage is again generated in the support element to move the contact element back from the second state to the first state.

[0031] Preferably, one or more of the first housing part, the second housing part, the support element, and the contact element are thermally conductive. In the temperature range of 1-10 K, "thermally conductive" means that these components are made of a material with a thermal conductivity of more than 1 W / (mK), preferably more than 10 W / (mK), and particularly preferably more than 100 W / (mK). For the temperature range of 10-100 K, "thermally conductive" means that these components are made of a material with a thermal conductivity of more than 30 W / (mK), preferably more than 100 W / (mK), and particularly preferably more than 200 W / (mK). Thus, all components of the passive thermal switch are highly thermally conductive, with the exception of the contact between the first and second housing parts, specifically the thermal insulation element.The support element can either consist entirely of thermally conductive materials or contain at least one thermally conductive material. Thermal conductivity from the first housing part to the second housing part, or vice versa, is thus controlled solely by the mechanical contact between the contact element and the contact surface. If the support element has several layers of different materials, at least one of these layers is highly thermally conductive and exhibits a thermal conductivity of more than 1 W / (mK), preferably more than 10 W / (mK), and particularly preferably more than 100 W / (mK) in the temperature range of 1–10 K. For the temperature range of 10–100 K, "thermally conductive" means that these layers are made, in particular, of a material that has a thermal conductivity of more than 30 W / (mK), preferably more than 100 W / (mK), and particularly preferably more than 200 W / (mK).For example, if the support element is made from a copper-indium alloy, copper in particular exhibits very good thermal conductivity. Heat can thus be transferred from the first housing part via the support element to the contact element, and from the contact element via the contact surface to the second housing part, or vice versa.

[0032] Preferably, the contact element is connected to the first housing part via several support elements. This allows for greater stability. At the same time, the support elements can be identical or different, providing more flexibility to achieve the desired limit temperature / switching temperature of the passive thermal switch.

[0033] Preferably, this is a passive micro-thermal switch. The carrier element has a thickness of 0.2–10 pm. In particular, the contact element has a thickness of 0.2–10 pm. Preferably, the housing part has a height of 1.5–500 pm, and particularly between 1.5 pm and 200 pm.

[0034] Preferably, this is a passive macro thermal switch, particularly for industrial applications. The carrier element has a thickness of 0.1–10 mm. In particular, the contact element has a thickness of 0.1–100 mm. Preferably, the housing part has a height of 0.15–250 cm, and particularly between 0.15 cm and 20 cm.

[0035] Preferably, the support element and the contact element are integrally formed together and, in particular, are made in one piece. In particular, the support element and the contact element are made of the same material. The present invention is explained in more detail below with reference to the accompanying figures.

[0036] They show:

[0037] Figure 1 shows a heat switch according to the present invention,

[0038] Figures 2A to 2C Cross-section of a heat switch according to the present invention,

[0039] Figures 3A, 3B show the passive thermal switch in different states.

[0040] Figure 4 shows a further embodiment of the heat switch according to the present invention and

[0041] Figure 5 shows another embodiment of the heat switch according to the present invention.

[0042] The following refers to Figure 1. Figure 1 shows a passive thermal switch 10 with a first housing part 12 and a second housing part 14. The first housing part 12 and the second housing part 14 are connected to each other via a thermal insulation element 16. Direct heat conduction from the first housing part 12 to the second housing part 14, or vice versa, is thus suppressed or at least reduced by the thermal insulation element 16. The thermal insulation element 16 can be a cryogen-compatible material such as polyamide. Furthermore, the first housing part 12 is U-shaped and, together with the planar second housing part 14, forms a chamber 26. A contact element 24 is arranged in the chamber 26 and is connected to the first housing part 12 via a support element 18.The support element 18 is connected to the legs of the U-shaped first housing part at two opposite points. The support element 18 is flexible, allowing the contact element 24 to move as indicated by arrow 23. In a first state, the contact element is separated from a contact surface 25 of the second housing part 14, thus thermally separating the first housing part 12 and the second housing part 14. In a second state, the contact element 24 is connected to the contact surface 25, so that the first housing part 12 and the second housing part 14 are thermally connected via the support element 18 and the contact element 24, and heat conduction is possible from the first housing part 12 via the support element 18, the contact element 24, and the contact surface 25 to the second housing part 14, or vice versa.

[0043] As shown in Figures 2A to 2D, the first housing part and the second housing part can have a rectangular cross-section, as shown in Figures 2A and 2B, or a circular cross-section, as shown in Figures 2C and 2D. Exactly one support element 18 can be provided, as shown in Figures 2B-2C, or several support elements 18, as shown in Figure 2A. Furthermore, the support element 18 can be designed as a strip-shaped support element as shown in Figures 2A, 2B and 2D, or as a disc-shaped element as shown in Figure 2C, which in particular at least partially or completely surrounds the contact element 24.

[0044] The support element 18 has several layers 20, 22. In the example shown in Figure 1, the support element 18 has a first layer 20 and a second layer 22. The layers 20, 22 are made of different materials, and in particular materials with different coefficients of thermal expansion, especially in the range of 100 K or less, and preferably in the range of 5 K or less. Due to the different coefficients of thermal expansion of the layers 20, 22, a stress is induced in the flexible support element 18 when the temperature changes. This stress can be used to switch the contact element 24 from the first state to the second state, or vice versa. The contact element 18 can be biased in the direction of the first state and / or the second state. The passive thermal switch 10 is...The position of the contact element 24 in the first state (shown in Figure 1) or the second state is stable. Alternatively, a bistable design is used, so that the state of the contact element 24 is stable in both the first and second states, and thus, upon a temperature change and a corresponding voltage in the carrier element 18, a snap-action transition occurs from the first state to the second state or vice versa. This results in a high switching speed. Simultaneously, the switching temperature can be controlled by the design of the carrier element 18 and, in particular, the choice of material for the layers 20 and 22, the layer thicknesses 20 and 22, or other properties of the carrier element 18. Thus, a simple passive thermal switch is created in which the switching temperature can be easily controlled.Furthermore, due to its simple design, the thermal switch has a low heat capacity, allowing for a fast switching speed or a fast switching process.

[0045] Reference is made below to Figures 3A and 3B. Identical elements are indicated by the same reference symbols.

[0046] In the example shown in Figures 3A and 3B, the first side 12 is connected to a cold side or heat sink, and the second housing part 14 is connected to a warm side or heat source. Above the switching temperature Tc, the contact element 24 is connected to the contact surface 25, allowing heat conduction from the second housing part 14 to the first housing part 12. If the temperature T falls below the switching temperature Tc, the contact element 24 is connected to the contact surface 25. cThe contact element 24 is moved from the second state shown in Figure 3A to the first state shown in Figure 3B and separated from the contact surface 25 of the second housing part 14. Heat conduction is thus interrupted.

[0047] Of course, Figures 3A and 3B only represent one possible embodiment. If, for example, thermal conductivity is to be provided by the passive thermal switch 10 at a temperature above the switching temperature, the layers 20 and 22 are essentially to be interchanged so that at a temperature below the switching temperature T c The contact element 24, analogous to Figure 3A, is in contact with the contact surface 25, thus enabling thermal conductivity. If the temperature then exceeds the switching temperature T c The contact element 24 is moved into the first state analogous to Figure 3B.

[0048] Thus, a thermal switch is created in which a snap-action switching mechanism provides a momentary switching action. Therefore, the thermal switch of the present invention can switch more precisely at a specific temperature than thermal switches of the prior art. This is further enhanced by the low heat capacity of the thermal switch due to its simple design. Consequently, it is not necessary to first introduce a large amount of heat into the thermal switch to generate sufficient voltage in the carrier element 18. Due to the low heat capacity of the thermal switch, even slight temperature changes are sufficient to trigger a precise switching action of the thermal switch upon reaching a limit temperature or switching temperature.At the same time, the simple design of the thermal switch in the present invention makes it possible to build it small and compact, and thus, for example, to implement it in on-chip cryostats or on electrical circuits. In particular, the thermal switch can be designed as a passive thermal switch. Reference is made below to Figure 4. In Figure 4, the carrier element also has two layers 28, 22, with the first layer 28 being formed from a magnetostrictive material. When a magnetic field is applied in the direction of arrow 34, a change in length occurs due to the magnetostriction of the first layer, which generates a mechanical stress in the carrier element 18, so that when the magnetic field is applied, the contact element 34 is movable in the direction of arrow 23.In particular, the support element can have a preload such that the contact element is in the first state, shown in Figure 4, when no magnetic field is applied, and is moved into the second state when a magnetic field is applied, or vice versa.

[0049] Reference is made below to Figure 5. In Figure 5, the support element 18 and / or the contact element 24 has a material 32 which changes from a paramagnetic state to a ferromagnetic state when a critical temperature is reached. In particular, the material 32 changes from its paramagnetic state to the ferromagnetic state when the critical temperature is undershot. In the ferromagnetic state, a magnetic force can act on the support element 18 or the contact element 24 when a magnetic field is applied in the direction of arrow 34, causing it to transition from the first state to the second state, or vice versa. This allows the contact element 24 to be moved in the direction of arrow 23. For example, the support element has a preload, so that the contact element is in the first state without a magnetic field or above the critical temperature. Below the critical temperature, the material 32 of the support element 18 or the contact element 24 changes from its paramagnetic state to its ferromagnetic state.of the contact element 24 into its ferromagnetic state and is thus attracted by the magnetic field into the second state.

Claims

Patent claims 1. A heat switch for temperature-dependent heat conduction with a housing, wherein the housing comprises a first housing part and a second housing part, and a flexible support element connected to the first housing part, and a contact element connected to the support element, wherein a contact surface is formed by the second housing part, wherein in a first state the contact element is separated from the contact surface, so that the first housing part and the second housing part are thermally separated, wherein in a second state the contact element is connected to the contact surface, so that the first housing part and the second housing part are thermally connected.

2. Heat switch according to claim 1, characterized in that the carrier element is biased in the direction of the first state and / or the second state.

3. Heat switch according to claim 1 or 2, characterized in that the carrier element is designed as a metal strip.

4. Heat switch according to one of claims 1 to 3, characterized in that the carrier element has at least two layers, wherein the layers are made of different materials.

5. Heat switch according to claim 4, characterized in that the materials have different coefficients of thermal expansion, in particular in the range of 100K or less and preferably in the range of 5K or less.

6. Heat switch according to one of claims 1 to 5, characterized in that the support element is designed to deform when the temperature changes, in particular due to the different coefficients of thermal expansion.

7. Heat switch according to one of claims 1 to 6, characterized in that the carrier element has a magnetostrictive material, such that a deformation of the carrier element occurs when a magnetic field is applied.

8. Heat switch according to one of claims 1 to 7, characterized in that the carrier element and / or the contact element comprises a material wherein the material has a transition from a ferromagnetic state to a paramagnetic state at a limiting temperature.

9. Heat switch according to claim 8, characterized by a magnetic field, wherein the magnetic field exerts a force on the ferromagnetic carrier element and / or contact element, wherein the contact element is movable into the first or the second state by the force.

10. Heat switch according to one of claims 1 to 9, characterized in that the first housing part and the second housing part are connected to each other by a thermal insulation element.

11. Heat switch according to one of claims 1 to 10, characterized in that a chamber is formed by the first housing part and the second housing part, wherein the contact element is arranged in the chamber.

12. Heat switch according to one of claims 1 to 11, characterized in that the first housing part is U-shaped and the support element extends in particular within the U-shaped first housing part.

13. Heat switch according to one of claims 1 to 12, characterized in that the contact element is moved from the first state to the second state when a limit temperature is exceeded.

14. Heat switch according to one of claims 1 to 13, characterized in that the contact element is moved from the first state to the second state when a predetermined limit temperature is undershot.

15. Heat switch according to one of claims 1 to 14, characterized in that one or more of the first housing part, the second housing part, the support element and the contact element are designed to be thermally conductive.

16. Heat switch according to one of claims 1 to 15, characterized in that the contact element and the carrier element are integral and in particular formed in one piece.

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