Novel organometallic compound, method for producing same, and method for producing thin film using same
Novel organometallic compounds as single-source precursors address the uniformity and consistency issues in GeSe and InSe thin film production, enabling high-quality films with improved thermal stability and electrical properties.
WO2026121725A1PCT designated stage Publication Date: 2026-06-11KOREA RES INST OF CHEM TECH
Patent Information
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- KOREA RES INST OF CHEM TECH
- Filing Date
- 2025-11-28
- Publication Date
- 2026-06-11
Smart Images
Figure KR2025020068_11062026_PF_FP_ABST
Abstract
The present invention relates to a novel organometallic compound, a method for producing same, and a method for producing a thin film using same, and more particularly, to an organometallic compound which has improved thermal stability and volatility in production of a thin film through chemical vapor deposition, atomic layer deposition, or a solution process, and from which it is possible to easily produce a germanium thin film or a germanium selenide thin film, or an indium-containing thin film or a gallium-containing thin film of high quality at low temperature, a method for producing same, and a method for producing a thin film using same.
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