A frequency mixer arrangement

By integrating an inductive component and resistive element into frequency mixers, the solution addresses the limitations of existing mixers, achieving improved conversion gain and output power for high-frequency applications.

WO2026124790A1 Publication Date: 2026-06-18TELEFONAKTIEBOLAGET LM ERICSSON (PUBL)

Patent Information

Authority / Receiving Office
WO · WO
Patent Type
Applications
Current Assignee / Owner
TELEFONAKTIEBOLAGET LM ERICSSON (PUBL)
Filing Date
2024-12-13
Publication Date
2026-06-18

AI Technical Summary

Technical Problem

Existing frequency mixers struggle to provide high output power and conversion gain, particularly for frequencies above 100 GHz, due to limitations in semiconductor devices and significant signal leakage through diodes.

Method used

Incorporating an inductive component in series between the diode and the current-sourcing terminal of a transistor, along with a resistive component, to enhance the performance of frequency mixers by increasing conversion gain, output power, and reducing DC power consumption.

🎯Benefits of technology

The proposed solution significantly improves conversion gain and output power while minimizing signal leakage, offering enhanced performance across a wide bandwidth and allowing for better control of gain characteristics.

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Abstract

A frequency mixer arrangement (300, 400, 500, 600) for receiving a first input signal (LOin) and a second input signal (IFin; RFin), for mixing the first and the second input signals to provide a frequency mixed signal (RFout; IFout), and for providing the frequency mixed signal as an output signal. The frequency mixer arrangement (300, 400, 500, 600) comprises: a first transistor (210), wherein the first transistor (210) is configured to receive the first and the second input signals at a control terminal (211) of the first transistor (210) and to mix the first and the second input signals to provide the frequency mixed signal from a current-sourcing terminal (213) of the first transistor (210), and wherein the first transistor (210) is configured to receive a first bias voltage (Vb1) at the control terminal (211) of the first transistor (210) and to receive a first supply voltage (Vcc1) at a current-collecting terminal (212) of the first transistor (210); and a diode (250), wherein an anode (251) of the diode (250) is galvanically connected to the current-sourcing terminal (213) of the first transistor (210) and a cathode (252) of the diode (250) is galvanically connected to ground, wherein the frequency mixer arrangement (300, 400, 500, 600) further comprises an inductive component (380) connected in series between the anode (251) of the diode (250) and the current-sourcing terminal (213) of the first transistor (210).
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