Potential corrector unit, apparatus, and method of using the potential corrector unit
The potential corrector unit addresses electron beam shifts near the wafer periphery by influencing the electric potential, improving measurement accuracy and reliability in charged particle beam assessment systems.
WO2026130839A1PCT designated stage Publication Date: 2026-06-25ASML NETHERLANDS BV
Patent Information
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- ASML NETHERLANDS BV
- Filing Date
- 2025-11-04
- Publication Date
- 2026-06-25
AI Technical Summary
Technical Problem
Existing charged particle beam assessment systems face challenges in accurately assessing semiconductor wafers near the periphery due to distortions caused by abrupt variations in electric potential, leading to electron beam shifts and reduced measurement accuracy.
Method used
A potential corrector unit is positioned upbeam of the sample to influence the electric potential at the peripheral region, reducing beam shifts and enhancing measurement accuracy by obscuring the peripheral edge from the electron beam's view.
Benefits of technology
The potential corrector unit improves the accuracy and reliability of assessments near the wafer periphery, increasing the usable area for inspection and enhancing defect detection and surface mapping fidelity.
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Smart Images
Figure EP2025081759_25062026_PF_FP_ABST
Abstract
The present invention provides a potential corrector unit for use in a charged particle beam assessment apparatus (41) for assessing a sample (208). The potential corrector unit comprises a potential corrector (300) configured to influence an electric potential at a peripheral region of a surface of the sample. The potential corrector is disposed upbeam of the sample.
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