Semiconductor device assemblies with aluminum nitride hybrid bonds and methods of forming the same
Aluminum nitride (AlN) is introduced as a dielectric material at the hybrid bonding interface to enhance thermal conductivity in semiconductor device assemblies, addressing the low thermal conductivity of conventional materials and improving heat extraction in high-performance devices.
WO2026136180A1PCT designated stage Publication Date: 2026-06-25MICRON TECHNOLOGY INC
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Patent Information
- Application Number
- PCT/US2025/059528
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2024-12-20
- Filing Date
- 2025-12-12
- Publication Date
- 2026-06-25
AI Technical Summary
Technical Problem
Conventional dielectric materials in semiconductor device assemblies exhibit low thermal conductivity, posing a packaging challenge for high-performance devices that generate waste heat and rely on vertical thermal energy transportation.
Method used
Incorporating aluminum nitride (AlN) as a highly thermally conductive dielectric material at the hybrid bonding interface between devices in a stack, enhancing thermal conductivity by two orders of magnitude compared to conventional materials.
Benefits of technology
AlN significantly improves vertical thermal conduction through the device stack, addressing the thermal conductivity limitations of conventional dielectric materials and facilitating effective heat extraction from high-performance semiconductor devices.
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Smart Images
Figure US2025059528_25062026_PF_FP_ABST
Abstract
A semiconductor device assembly is provided, comprising a first semiconductor device having an upper surface at which are disposed a first plurality of coplanar metal contact structures and a first aluminum nitride bonding surface and a second semiconductor device having a lower surface at which are disposed a second plurality of coplanar metal contact structures and a second aluminum nitride bonding surface. Each of the first plurality of coplanar metal contact structures are directly bonded to a corresponding one of the second plurality of coplanar metal contact structures by a metal-metal bond, and the first aluminum nitride bonding surface is directly bonded to the second aluminum nitride bonding surface by a fusion bond.
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