Power regulation method for radio-frequency power supply, and semiconductor process device

Abstract

The present application discloses a power regulation method for a radio-frequency power supply and a semiconductor process device. The method comprises: during execution of a process recipe in a multi-station chamber, acquiring actual load power of each station having a wafer; acquiring standard load power corresponding to the process recipe and each station having a wafer; and performing power regulation on a radio-frequency power supply on the basis of the actual load power and the standard load power of each station having a wafer. The present application enables dynamic power regulation of a radio-frequency power supply based on different actual states of a semiconductor process device and different process recipes, thereby ensuring stable power output at each station, improving film thickness uniformity, accommodating multiple process recipes, and broadening the process window. In addition, no separate regulation modules are required for individual stations, thereby enabling a simple structure, simplified control and computational logic, and ease of implementation on the device side.

Description

Power regulation methods for radio frequency power supplies and semiconductor process equipment Technical Field

[0001] This application belongs to the field of semiconductor technology, and in particular relates to a power regulation method for radio frequency power supplies and semiconductor process equipment. Background Technology

[0002] In actual operation, semiconductor process equipment with multiple station chambers may experience situations where the chambers are not fully occupied due to the loading and unloading of wafers. The number of empty wafers in a chamber varies, and the RF impedance of the chamber also varies, which in turn causes fluctuations in RF power transmission and wafer film thickness, resulting in poor film thickness consistency between wafers. Summary of the Invention

[0003] The purpose of this application is to provide a power regulation method for radio frequency power supplies and semiconductor process equipment to solve the problem of poor film thickness consistency caused by different numbers of empty wafers in multi-station chambers.

[0004] To achieve the above objectives, the embodiments of this application adopt the following technical solutions:

[0005] In a first aspect, embodiments of this application provide a power adjustment method for an RF power supply, comprising: when executing a process recipe in a multi-station chamber, obtaining the actual load power of each station with a wafer; obtaining the standard load power corresponding to the process recipe and each of the stations with wafers; and adjusting the power of the RF power supply according to the actual load power and the standard load power of each of the stations with wafers.

[0006] Secondly, embodiments of this application provide a semiconductor process apparatus, including: a radio frequency (RF) power supply, a matching unit, a multi-station chamber, a controller, and multiple detectors. The RF power supply is connected to the ungrounded electrodes of each station in the multi-station chamber via the matching unit. One detector is connected to one of the ungrounded electrodes. The controller is connected to the multiple detectors and the RF power supply respectively. The detectors are used to detect the actual load power of the corresponding station. The controller includes at least one processor and at least one memory. The memory stores a computer program. When the computer program is executed by the processor, it implements the steps of the power adjustment method of the RF power supply as described in the first aspect of this application.

[0007] The above-described technical solutions adopted in the embodiments of this application can achieve the following beneficial effects:

[0008] In this embodiment of the application, when executing a process recipe in a multi-station chamber, the actual load power of each station with a wafer is obtained, as well as the standard load power corresponding to the process recipe and each station with a wafer. Based on the actual load power and the standard load power of each station with a wafer, the RF power supply is adjusted. This embodiment sets different standard load powers for different process recipes and adjusts the RF power supply based on the actual load power of each station with a wafer. This achieves dynamic power adjustment of the RF power supply according to the actual state of the semiconductor process equipment and the execution of different process recipes, thereby ensuring the stability of the power output at each station, improving film thickness consistency, and covering multiple process recipes, thus expanding the process window. Attached Figure Description

[0009] The accompanying drawings, which are included to provide a further understanding of this application and form part of this application, illustrate exemplary embodiments and are used to explain this application, but do not constitute an undue limitation of this application. In the drawings:

[0010] Figure 1 is a schematic diagram of the structure of semiconductor process equipment in related technologies;

[0011] Figure 2 is a flowchart illustrating a power regulation method for an RF power supply according to an embodiment of this application;

[0012] Figure 3 is a schematic diagram of the structure of a semiconductor process equipment provided in an embodiment of this application;

[0013] Figure 4 is a schematic diagram of a chip transfer process provided in an embodiment of this application;

[0014] Figure 5 is a schematic diagram of a power regulation process provided in an embodiment of this application;

[0015] Figure 6 is a schematic diagram of a power regulation process provided in another embodiment of this application;

[0016] Figure 7 is a schematic diagram of the structure of a semiconductor process equipment provided in an embodiment of this application. Detailed Implementation

[0017] To make the objectives, technical solutions, and advantages of this application clearer, the technical solutions of this application will be clearly and completely described below in conjunction with specific embodiments and corresponding drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0018] The terms "first," "second," etc., used in this application are used to distinguish similar objects and not to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate so that embodiments of this application can be implemented in orders other than those illustrated or described herein. Furthermore, "and / or" in this application indicates at least one of the connected objects, and the character " / " generally indicates that the preceding and following objects are in an "or" relationship. It should be noted that all data involved in this application was obtained with the user's authorization.

[0019] In actual operation, semiconductor process equipment with multiple wafer stations may experience situations where a wafer is not fully occupied during wafer loading and unloading. For example, in a six-station wafer station, when the first wafer enters the station for processing, the remaining five stations are empty; when the second wafer enters, the remaining four stations are empty; when the third wafer enters, the remaining three stations are empty; when the fourth wafer enters, the remaining two stations are empty; when the fifth wafer enters, the remaining one station is empty; and when the sixth wafer enters, the station is full. Therefore, during the process, the number of wafers and empty wafers within the cavity varies, resulting in different RF impedances within the cavity. This leads to fluctuations in RF power transmission and wafer film thickness, ultimately causing poor film thickness consistency between wafers.

[0020] Figure 1 is a schematic diagram of the structure of a semiconductor process equipment. As shown in Figure 1, the process gas enters the chamber through the inlet pipe 9. The high-frequency power supply 1 is connected to the input terminal of the high-frequency matching device 3 through a coaxial cable. The low-frequency power supply 2 is connected to the input terminal of the low-frequency matching device 4 through a coaxial cable. The output terminals of the high-frequency matching device 3 and the low-frequency matching device 4 are connected to the high-frequency input terminal and the low-frequency input terminal of the power equalizer 5, respectively. The high-frequency power and low-frequency power are distributed to multiple stations through the power equalizer 5. The power equalizer 5 transmits the allocated power of each station to the upper electrode 6 (e.g., spray head) of each station through the coaxial cable. The lower electrode 7 (e.g., base) is connected to the chamber wall 8 to achieve grounding.

[0021] To address the film thickness consistency issue, the following solution is adopted in related technology one for the semiconductor process equipment shown in Figure 1: Two sets of fixed high-frequency and low-frequency compensation coefficients are pre-set, for example, high frequency: A1, A2, A3, A4, A5, low frequency: B1, B2, B3, B4, B5, corresponding to 1, 2, 3, 4, and 5 empty wafers in the cavity, respectively. During process operation, the corresponding high-frequency and low-frequency compensation coefficients are called for power compensation based on the number of empty wafers in the cavity. However, during process operation, different actual states of the semiconductor process equipment and different process recipes can lead to variations in power output at each station. Therefore, using fixed compensation coefficients may sometimes worsen film thickness consistency, or limit the semiconductor process equipment to only run process recipes corresponding to fixed compensation coefficients, resulting in a smaller process window.

[0022] To address the issue of film thickness consistency, the following solution is adopted in related technology two for the semiconductor process equipment shown in Figure 1: An adjustment module (including variable inductors and / or capacitors, etc.) is installed downstream of the power equalizer 5 for each station. Based on the actual load power of each station, the output power of each station is adjusted. However, this solution has a complex structure and cumbersome control calculation logic, making it difficult to implement at the machine level.

[0023] To address this issue, this application proposes a power regulation method for an RF power supply, semiconductor process equipment, and storage medium to solve the problem of poor film thickness consistency caused by different numbers of empty wafers in multi-station chambers. It also addresses the problems of poor film thickness consistency and small process window caused by the fixed compensation coefficient in related technology one, and the complex structure and cumbersome control calculation logic of setting up separate adjustment modules for each station in related technology two, which are currently difficult to implement on the machine.

[0024] The technical solutions provided by the various embodiments of this application are described in detail below with reference to the accompanying drawings.

[0025] Figure 2 is a flowchart illustrating a power regulation method for an RF power supply according to an embodiment of this application. As shown in Figure 2, the power regulation method for an RF power supply according to this embodiment may specifically include the following steps:

[0026] S201, when executing process formulations in multi-station chambers, obtains the actual load power of each station with wafers.

[0027] In this embodiment of the application, the execution subject of the power adjustment method of the radio frequency power supply is a controller, which can be set in the host computer and / or slave computer of the semiconductor process equipment (such as deposition equipment, etching equipment, etc.).

[0028] Regarding the structure of the semiconductor process equipment shown in Figure 1, the structure of the semiconductor process equipment corresponding to the power regulation method of the RF power supply in this application embodiment can be as shown in Figure 3. Based on the embodiment shown in Figure 1, it further includes: multiple detectors 10 connected to the upper electrode 6 of each station, such as voltage and current (Volt Ampere, VI) detectors, and a controller 11 connected to the multiple detectors 10, the high-frequency power supply 1, and the low-frequency power supply 2 respectively. The detectors 10 are used to detect parameters such as voltage, current, and power at the upper electrode 6 in real time, and transmit the collected parameter information to the controller 11 in real time. It should be noted that in some other embodiments, the upper electrode 6 can also be connected to the chamber wall 8 to achieve grounding, and the lower electrode 7 can be connected to the power equalizer 5 and the detectors 10. The frequency of the high-frequency power supply 1 can be 13.56 MHz, 27.12 MHz, 40 MHz, etc., and the frequency of the low-frequency power supply can be 400 kHz, 2 MHz, etc.

[0029] When executing a specific process formulation in a multi-station chamber, the actual load power of each station with a wafer (i.e., a non-empty wafer) can be obtained through detector 10. It should be noted that when the RF power supply includes a high-frequency power supply 1 and a low-frequency power supply 2 as shown in Figure 3, the obtained actual load power includes both the actual high-frequency load power and the actual low-frequency load power. When the RF power supply is a single type, either high-frequency power supply 1 or low-frequency power supply 2, the obtained actual load power is either the actual high-frequency load power or the actual low-frequency load power. Furthermore, multiple stations within the chamber can share the same RF power supply or use their own individual RF power supplies.

[0030] S202, obtain the standard load power corresponding to the process formulation and the station with wafers.

[0031] In this embodiment, the standard load power is the actual load power of each station when all stations in the multi-station chamber have wafers, i.e., the chamber is fully loaded. It should be noted that when the RF power supply, as shown in Figure 3, includes a high-frequency power supply 1 and a low-frequency power supply 2, the standard load power obtained here includes both the standard high-frequency load power and the standard low-frequency load power. When the RF power supply is a single type, i.e., high-frequency power supply 1 or low-frequency power supply 2, the standard load power obtained here is either the standard high-frequency load power or the standard low-frequency load power. Furthermore, multiple stations within the chamber can share the same RF power supply or use their own individual RF power supplies.

[0032] The process recipe power parameter relationships can be pre-stored, including the standard load power corresponding to each station in a multi-station chamber under multiple process recipes. Based on the process recipe and the stations with wafers, the standard load power corresponding to each station with wafers can be found in the pre-stored process recipe power parameter relationships.

[0033] The following describes the wafer transfer process in detail, using a six-station system where six wafers undergo processing at each station, with each wafer requiring one processing cycle at each station, and the entire process considered complete only after six processing cycles: The robotic arm transfers the first wafer to station 1 in the chamber and then performs the first processing cycle under controlled conditions. At this point, there are five empty stations in the chamber. After the first processing cycle, the robotic arm places the first wafer at station 2 and transfers it to station 1 for the second wafer. At this point, there are four empty stations in the chamber. The processing cycle is performed again; the first wafer has now undergone two processing cycles, and the second wafer has undergone one. The robotic arm then places the first wafer at station 3, the second wafer at station 2, and transfers it to station 1 for the third wafer. At this point, there are three empty stations in the chamber. The process is executed again at each empty station. At this point, the first wafer has undergone three processing steps, the second wafer has undergone two processing steps, and the third wafer has undergone one processing step. The robot places the first wafer at station 4, the second wafer at station 3, and the third wafer at station 2, and then transfers the wafer to station 1 for placement of the fourth wafer. At this time, there are two empty stations in the chamber. The process is executed again at each empty station. At this point, the first wafer has undergone four processing steps, the second wafer has undergone three processing steps, the third wafer has undergone two processing steps, and the fourth wafer has undergone one processing step. The robot places the first wafer at station 5, the second wafer at station 4, the third wafer at station 3, and the fourth wafer at station 2, and then transfers the wafer to station 1 for placement of the fifth wafer. At this time, there are empty stations in the chamber. An empty station is used to execute the process again. At this point, the first wafer has undergone five processing iterations, the second four, the third three, the fourth two, and the fifth one. The robotic arm places the first wafer at station 6, the second at station 5, the third at station 4, the fourth at station 3, and the fifth at station 2, and then transfers it to station 1 for the sixth wafer. There are no empty stations in the chamber at this time, so the process is executed again. At this point, the first wafer has undergone six processing iterations, the second five, the third four, the fourth three, the fifth two, and the sixth one. After the first wafer completes six processing steps, it is moved out of the chamber. The robot places the second wafer at station 6, the third wafer at station 5, the fourth wafer at station 4, the fifth wafer at station 3, and the sixth wafer at station 2. At this point, there is one empty station in the chamber. The processing is then repeated. This time, the second wafer undergoes six processing steps, the third wafer undergoes five, the fourth wafer undergoes four, the fifth wafer undergoes three, and the sixth wafer undergoes two. After the second wafer completes six processing steps, it is moved out of the chamber. The six wafers are then moved out of the chamber sequentially in the same manner, requiring a total of 11 processing steps. These details are not elaborated here. Table 1 shows the empty wafer situation during the process, where #1 to #6 represent the six wafers.Because this process requires the continuous input and output of wafers, it can lead to situations where empty wafers are placed in the chamber.

[0034] Table 1. Empty wafer situation during the process.

[0035] The corresponding control flow is as follows: First, with the chamber fully loaded as the standard, six wafers are introduced into the chamber, and process formula 1 is executed. During the process, the load power collected by the detectors at stations 1 to 6 is recorded. For example, the high-frequency load power is P1, P2, P3, P4, P5, P6, and the low-frequency load power is Q1, Q2, Q3, Q4, Q5, Q6. After the process is completed, these six wafers are retrieved. Six more wafers are introduced into the chamber, and process formula 2 is executed. During the process, the load power collected by the detectors at stations 1 to 6 is recorded. For example, the high-frequency load power is M1, M2, M3, M4, M5, M6, and the low-frequency load power is N1, N2, N3, N4, N5, N6. If there are other process formulas, the above steps can be repeated, which will not be elaborated here. According to process requirements, adjusting the power equalizer 5's equalization circuit allows the six high-frequency load powers recorded for each process recipe to be the same, different, or some of them the same. Similarly, the six low-frequency load powers can also be the same, different, or some of them the same. Then, the high-frequency load powers P1, P2, P3, P4, P5, P6 and low-frequency load powers Q1, Q2, Q3, Q4, Q5, Q6 corresponding to process recipe 1, and the high-frequency load powers M1, M2, M3, M4, M5, M6 and low-frequency load powers N1, N2, N3, N4, N5, N6 corresponding to process recipe 2 are stored in the controller. For multiple process recipes, the process recipe identifier (e.g., the process recipe name) corresponds one-to-one with the load power (here, the standard load power).

[0036] S203 adjusts the RF power supply based on the actual load power and standard load power of each wafer-bearing station.

[0037] In this embodiment, when the RF power supply includes a high-frequency power supply and a low-frequency power supply, the actual load power includes the actual high-frequency load power and the actual low-frequency load power, and the standard load power includes the standard high-frequency load power and the standard low-frequency load power. Correspondingly, this step may specifically include the following steps: adjusting the power of the high-frequency power supply according to the actual high-frequency load power and the standard high-frequency load power of each wafer-bearing station; and / or adjusting the power of the low-frequency power supply according to the actual low-frequency load power and the standard low-frequency load power of each wafer-bearing station.

[0038] When the RF power supply includes either a high-frequency power supply or a low-frequency power supply, the actual load power includes either the actual high-frequency load power or the actual low-frequency load power, and the standard load power includes either the standard high-frequency load power or the standard low-frequency load power. Correspondingly, this step may specifically include the following steps: adjusting the power of the high-frequency power supply according to the actual high-frequency load power and the standard high-frequency load power of each wafer-containing station; or adjusting the power of the low-frequency power supply according to the actual low-frequency load power and the standard low-frequency load power of each wafer-containing station.

[0039] When different stations share the same RF power supply, this step may specifically include the following steps: adjust the power of the RF power supply shared by each station with wafers according to the actual load power and standard load power of each station with wafers.

[0040] When different stations correspond to different RF power supplies, this step may specifically include the following steps: adjust the power of the RF power supply corresponding to each station with wafers according to the actual load power and standard load power of each station with wafers.

[0041] In practical applications, the power adjustment of the RF power supply can be determined based on the difference between the actual load power and the standard load power. Specifically: if the actual load power is within a set range near the standard load power, no power adjustment is performed on the RF power supply; if the actual load power is outside the set range near the standard load power, then power adjustment is performed on the RF power supply. The set range can be 0.5% to 2%, for example, 1%, and can be set according to process requirements.

[0042] The power adjustment of the RF power supply may include the following steps: if the actual load power is less than the standard load power, increase the power of the RF power supply; if the actual load power is greater than the standard load power, decrease the power of the RF power supply to ensure the stability of the actual load power. Specifically, the power of the RF power supply can be adjusted based on the average ratio of the actual load power to the standard load power at each wafer location. For example, the following formula can be used to adjust the power of the RF power supply:

[0043] Where W′ is the power after RF power supply regulation, W is the power before RF power supply regulation, n is the number of wafer-bearing stations, and W i实 W represents the actual load power of the i-th station with a wafer. i标 Let be the standard load power of the i-th station with wafers.

[0044] In the above scheme, the controller can identify which specific stations in the chamber contain wafers, and then compare the actual load power detected at the stations containing wafers with the standard load power. The logic for the controller to identify which stations in the chamber contain wafers and which are empty is shown in Figure 4. Figure 4 uses a three-wafer input / output chamber as an example, including:

[0045] S401, process begins.

[0046] S402, the first wafer is transferred to station 1. At this time, the controller records that station 1 has a wafer, while stations 2, 3, 4, 5, and 6 do not have wafers.

[0047] S403, the first wafer from station 1 is transferred to station 2. At this time, the controller records that station 2 has a wafer, while stations 1, 3, 4, 5, and 6 do not have wafers.

[0048] S404, transfer the second wafer to station 1. At this time, the controller records that stations 1 and 2 have wafers, while stations 3, 4, 5, and 6 do not.

[0049] S405: The first wafer from station 2 is transferred to station 3, and the second wafer from station 1 is transferred to station 2. At this time, the controller records that stations 2 and 3 have wafers, while stations 1, 4, 5, and 6 do not have wafers.

[0050] S406, transfer the third wafer to station 1. At this time, the controller records that stations 1, 2, and 3 have wafers, while stations 4, 5, and 6 do not.

[0051] In step S407, the first wafer from station 3 is transferred to station 1, while the third wafer from station 1 and the second wafer from station 2 are transferred to stations 5 and 6 respectively. At this time, the controller records that stations 1, 5, and 6 have wafers, while stations 2, 3, and 4 do not. It is easy to understand that in step S406, the third wafer from station 1 leaves station 1 at the same time the first wafer leaves station 3, thus allowing the first wafer to be transferred to station 1.

[0052] S408, the first wafer is retrieved from station 1. At this time, the controller records that stations 5 and 6 have wafers, while stations 1, 2, 3, and 4 do not.

[0053] S409: The second wafer from station 6 is transferred to station 1, and the third wafer from station 5 is transferred to station 6. At this time, the controller records that stations 1 and 6 have wafers, while stations 2, 3, 4, and 5 do not.

[0054] S410, the second wafer is retrieved from station 1. At this time, the controller records that station 6 has a wafer, while stations 1, 2, 3, 4, and 5 do not have wafers.

[0055] S411, the third wafer at station 6 is transferred to station 1. At this time, the controller records that station 1 has a wafer, while stations 2, 3, 4, 5, and 6 do not have wafers.

[0056] S412, process complete.

[0057] Taking chamber-based process formulation 1, with one wafer inside the chamber as an example, the specific process for power adjustment is shown in Figure 5, including:

[0058] S501, a wafer is transferred from the chamber to station 1.

[0059] S502, the controller records that station 1 has a wafer, while stations 2, 3, 4, 5, and 6 do not have wafers.

[0060] S503, execute process formula 1.

[0061] S504, the detector detected that the actual high-frequency load power of station 1 is P11 and the actual low-frequency load power is Q11.

[0062] S505, the controller compares P11 with the standard high-frequency load power P1, and Q11 with the standard low-frequency load power Q1, to determine whether P11 and Q11 are within the expected range.

[0063] Within the expected range, for example, |P11-P1|≤1%*P1, |Q11-Q1|≤1%*Q1. If yes, return to step S504. If not, proceed to step S506.

[0064] S506, the controller adjusts the power output of the high-frequency power supply to P' = P / (P11 / P1), and / or adjusts the power output of the low-frequency power supply to Q' = Q / (Q11 / Q1).

[0065] Specifically, if only P11 is not satisfied, the controller adjusts the high-frequency power supply output to P' = P / (P11 / P1), while the low-frequency power supply output remains unchanged. For example, when the actual high-frequency load power P11 at station 1 is low, it will lead to a decrease in the film thickness deposited on the wafer at station 1. In this case, increasing the high-frequency power supply output will correspondingly increase the high-frequency power allocated to station 1, thereby increasing the film thickness to meet the standard requirements and ensuring that the process at station 1 is consistent with the process when the chamber is full, resulting in a consistent film layer. When the actual high-frequency load power P11 at station 1 is high, the trend is the opposite, which will not be elaborated here.

[0066] If only Q11 is not satisfied, the controller adjusts the low-frequency power supply output to Q' = Q / (Q11 / Q1), while the high-frequency power supply output remains unchanged. For example, when the actual low-frequency load power Q11 at station 1 is low, it will lead to a decrease in the compressive stress of the thin film deposited on the wafer at station 1. In this case, increasing the power output of the low-frequency power supply will correspondingly increase the low-frequency power allocated to station 1, thereby increasing the compressive stress of the thin film to meet the standard requirements and ensuring that the process at station 1 is consistent with the process when the chamber is full, resulting in a consistent film layer. When the actual low-frequency load power Q11 at station 1 is high, the trend is the opposite, which will not be elaborated here.

[0067] If neither P11 nor Q11 is satisfied, the controller will simultaneously adjust the power output of the high and low frequency power supplies: P' = P / (P11 / P1), Q' = Q / (Q11 / Q1).

[0068] After the controller adjusts the power of the RF power supply, the detector detects the actual load power of station 1 again. The controller determines whether the detected actual load power is within the expected range. If it is still not within the expected range, the controller further adjusts the power output of the RF power supply until the actual load power P11 and Q11 are both within the expected range.

[0069] Taking chamber-based process formulation 1, with two wafers inside the chamber as an example, the specific process for power adjustment is shown in Figure 6, including:

[0070] S601, two wafers are transferred from the chamber to stations 1 and 2.

[0071] Specifically, after the first wafer at station 1 completes the first process (corresponding to process formula 1), it is transferred by a robot to station 2 to prepare for the second process, and the second wafer is transferred from the chamber to station 1.

[0072] S602, the controller records that stations 1 and 2 have wafers, while stations 3, 4, 5, and 6 do not have wafers.

[0073] S603, execute process formula 1.

[0074] S604, Detector 1 detects that the actual high-frequency load power of station 1 is P11 and the actual low-frequency load power is Q11. Detector 2 detects that the actual high-frequency load power of station 2 is P22 and the actual low-frequency load power is Q22.

[0075] S605, the controller compares P11 with P1, Q11 with Q1, P22 with P2, and Q22 with Q2 to determine whether P11, Q11, P22, and Q22 are within the expected range.

[0076] Within the expected range, for example, |P11-P1|≤1%*P1, |Q11-Q1|≤1%*Q1, |P22-P2|≤1%*P2, |Q22-Q2|≤1%*Q2. If yes, return to step S604. If no, proceed to step S606.

[0077] S606, the controller adjusts the power output of the high-frequency power supply to P'=P / {(P11 / P1+P22 / P2) / 2}, and / or adjusts the power output of the low-frequency power supply to Q'=Q / {(Q11 / Q1+Q22 / Q2) / 2}.

[0078] In summary, the RF power supply power adjustment method of this application embodiment, when executing process recipes in a multi-station chamber, obtains the actual load power of each station with wafers, obtains the standard load power corresponding to the process recipe and each station with wafers, and adjusts the RF power supply based on the actual load power and standard load power of each station with wafers. This application embodiment sets different standard load powers for different process recipes and adjusts the RF power supply power in conjunction with the actual load power of each station with wafers. This achieves dynamic power adjustment of the RF power supply according to the actual state of the semiconductor process equipment and the running of different process recipes, thereby ensuring the stability of power output at each station, improving film thickness consistency, covering multiple process recipes, increasing the process window, and eliminating the need to set adjustment modules at each station. The structure is simple, the control calculation logic is simple, and it is easy to implement on the machine.

[0079] This application also provides a semiconductor process apparatus. As shown in FIG7, the semiconductor process apparatus includes: an RF power supply 70, a matching unit 71, a multi-station chamber, a controller 11, and multiple detectors 10. The RF power supply 70 is connected to the ungrounded electrode 72 (which can be the upper electrode or the lower electrode) of each station in the multi-station chamber through the matching unit 71 (FIG7 shows the ungrounded electrode 72 as the upper electrode as an example). Each detector 10 is connected to one ungrounded electrode 72. The grounded electrode 73 (which can be the lower electrode or the upper electrode) of each station is connected to the chamber wall 8 to achieve grounding. The controller 11 is connected to the multiple detectors 10 and the RF power supply 70 respectively.

[0080] Detector 10 is used to detect the actual load power of the corresponding station.

[0081] The controller 11 is located in the host computer and / or slave computer of the semiconductor process equipment. The controller 11 includes at least one processor and at least one memory. The memory stores a computer program. When the computer program is executed by the processor, it implements the steps of any of the above-described embodiments of the power regulation method for radio frequency power supply.

[0082] The RF power supply 70 can be a single type of RF power supply, either a high-frequency power supply or a low-frequency power supply, corresponding to a matching circuit 71, either a high-frequency matching circuit or a low-frequency matching circuit. Alternatively, the RF power supply 70 can include two types of RF power supplies, namely a high-frequency power supply and a low-frequency power supply, in which case the high-frequency power supply corresponds to a high-frequency matching circuit, and the low-frequency power supply corresponds to a low-frequency matching circuit.

[0083] As shown in Figure 7, multiple stations within the cavity can share a single RF power supply (which can be a high-frequency power supply, a low-frequency power supply, or both). In this case, a power divider 5 is needed to distribute power among the multiple stations. Alternatively, each station within the cavity can have its own dedicated RF power supply, in which case the power divider 5 is not required.

[0084] The semiconductor process equipment of this application, when executing a process recipe in a multi-station chamber, acquires the actual load power of each station with wafers and the standard load power corresponding to the process recipe and each station with wafers. Based on the actual load power and standard load power of each station with wafers, the RF power supply is adjusted. This application sets different standard load powers for different process recipes and adjusts the RF power supply based on the actual load power of each station with wafers. This achieves dynamic power adjustment of the RF power supply according to the actual state of the semiconductor process equipment and the execution of different process recipes, thereby ensuring the stability of power output at each station, improving film thickness consistency, covering multiple process recipes, increasing the process window, and eliminating the need for separate adjustment modules at each station. The structure is simple, the control calculation logic is simple, and it is easy to implement on the machine.

[0085] This application also proposes a readable storage medium storing one or more computer programs, the one or more computer programs including instructions. When the program or instructions are executed by a processor in a semiconductor process apparatus including multiple applications, the processor in the semiconductor process apparatus is able to execute the various processes of the above-described power regulation method embodiments of the radio frequency power supply, and is specifically used to execute the steps of any of the above-described power regulation method embodiments of the radio frequency power supply.

[0086] The readable storage medium of this application embodiment, when executing a process recipe in a multi-station chamber, acquires the actual load power of each station with a wafer, acquires the standard load power corresponding to the process recipe and each station with a wafer, and adjusts the RF power supply based on the actual load power and standard load power of each station with a wafer. This application embodiment sets different standard load powers for different process recipes and adjusts the RF power supply based on the actual load power of each station with a wafer. This achieves dynamic power adjustment of the RF power supply according to the actual state of the semiconductor process equipment and the running of different process recipes, thereby ensuring the stability of the power output of each station, improving film thickness consistency, covering multiple process recipes, increasing the process window, and eliminating the need to set adjustment modules at each station. The structure is simple, the control calculation logic is simple, and it is easy to implement on the machine.

[0087] The systems, devices, modules, or units described in the above embodiments can be implemented by computer chips or entities, or by products with certain functions. A typical implementation device is a computer. Specifically, a computer can be, for example, a personal computer, laptop computer, cellular phone, camera phone, smartphone, personal digital assistant, media player, navigation device, email device, game console, tablet computer, wearable device, or any combination of these devices.

[0088] For ease of description, the above devices are described separately by function as various units. Of course, in implementing this application, the functions of each unit can be implemented in one or more software and / or hardware.

[0089] Those skilled in the art will understand that embodiments of this application can be provided as methods, systems, or computer program products. Therefore, this application can take the form of a completely hardware embodiment, a completely software embodiment, or an embodiment combining software and hardware aspects. Furthermore, this application can take the form of a computer program product embodied on one or more computer-usable storage media (including but not limited to disk storage, CD-ROM, optical storage, etc.) containing computer-usable program code.

[0090] This application is described with reference to flowchart illustrations and / or block diagrams of methods, apparatus (systems), and computer program products according to embodiments of this application. It will be understood that each block of the flowchart illustrations and / or block diagrams, and combinations of blocks in the flowchart illustrations and / or block diagrams, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, special-purpose computer, embedded processor, or other programmable data processing apparatus to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing apparatus, create means for implementing the functions specified in one or more flowchart illustrations and / or one or more block diagrams.

[0091] These computer program instructions may also be stored in a computer-readable storage medium that can direct a computer or other programmable data processing device to function in a particular manner, such that the instructions stored in the computer-readable storage medium produce an article of manufacture including instruction means that implement the functions specified in one or more flowcharts and / or one or more block diagrams.

[0092] These computer program instructions may also be loaded onto a computer or other programmable data processing apparatus to cause a series of operational steps to be performed on the computer or other programmable apparatus to produce a computer-implemented process, such that the instructions, which execute on the computer or other programmable apparatus, provide steps for implementing the functions specified in one or more flowcharts and / or one or more block diagrams.

[0093] In a typical configuration, a computing device includes one or more processors (CPU), input / output interfaces, network interfaces, and memory.

[0094] Memory may include non-persistent storage in computer-readable media, such as random access memory (RAM) and / or non-volatile memory, such as read-only memory (ROM) or flash RAM. Memory is an example of computer-readable media.

[0095] Computer-readable media includes both permanent and non-permanent, removable and non-removable media that can store information using any method or technology. Information can be computer-readable instructions, data structures, modules of programs, or other data. Examples of computer storage media include, but are not limited to, phase-change memory (PRAM), static random access memory (SRAM), dynamic random access memory (DRAM), other types of random access memory (RAM), read-only memory (ROM), electrically erasable programmable read-only memory (EEPROM), flash memory or other memory technologies, CD-ROM, digital versatile optical disc (DVD) or other optical storage, magnetic tape, magnetic magnetic disk storage or other magnetic storage devices, or any other non-transferable medium that can be used to store information accessible by a computing device. As defined herein, computer-readable media does not include transient computer-readable media, such as modulated data signals and carrier waves.

[0096] It should also be noted that the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such process, method, article, or apparatus. Unless otherwise specified, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes that element.

[0097] This application can be described in the general context of computer-executable instructions, such as program modules, that are executed by a computer. Generally, program modules include routines, programs, objects, components, data structures, etc., that perform a specific task or implement a specific abstract data type. This application can also be practiced in distributed computing environments where tasks are performed by remote processing devices connected via a communication network. In distributed computing environments, program modules can reside in local and remote computer storage media, including storage devices.

[0098] The various embodiments in this specification are described in a progressive manner. Similar or identical parts between embodiments can be referred to interchangeably. Each embodiment focuses on describing the differences from other embodiments. In particular, the system embodiments are basically similar to the method embodiments, so the description is relatively simple; relevant parts can be referred to the descriptions in the method embodiments.

[0099] The above are merely embodiments of this application and are not intended to limit the scope of this application. Various modifications and variations can be made to this application by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the scope of the claims of this application.

Claims

1. A method for regulating the power of an radio frequency power supply, characterized in that, include: When executing process formulations in multi-station chambers, obtain the actual load power of each station with wafers; Obtain the standard load power corresponding to the process formulation and each of the wafer-bearing stations; The power of the radio frequency power supply is adjusted according to the actual load power and the standard load power of each wafer-bearing station.

2. The method according to claim 1, characterized in that, The radio frequency power supply includes a high-frequency power supply and a low-frequency power supply. The step of adjusting the power supply based on the actual load power and the standard load power of each wafer-bearing station includes: Based on the actual high-frequency load power and standard high-frequency load power of each of the wafer-bearing stations, the high-frequency power supply is adjusted; and / or, The power of the low-frequency power supply is adjusted according to the actual low-frequency load power and the standard low-frequency load power of each wafer-bearing station.

3. The method according to claim 1, characterized in that, The radio frequency power supply is shared by different stations.

4. The method according to claim 1, characterized in that, The standard load power is the actual load power of each station when all stations in the multi-station chamber have wafers.

5. The method according to claim 1, characterized in that, The step of obtaining the standard load power corresponding to the process formulation and each of the wafer-bearing stations includes: Based on the process recipe and each of the wafer-bearing stations, the corresponding standard load power is searched in the pre-stored process recipe power parameter relationship, which includes the standard load power corresponding to each station in the multi-station chamber under multiple process recipes.

6. The method according to claim 1, characterized in that, The step of adjusting the power of the radio frequency power supply based on the actual load power and the standard load power of each of the wafer-bearing stations includes: If the actual load power is within a set range near the standard load power, then the RF power supply will not be adjusted. If the actual load power is outside the set range near the standard load power, the power of the radio frequency power supply is adjusted.

7. The method according to claim 6, characterized in that, The power regulation of the radio frequency power supply includes: If the actual load power is less than the standard load power, then increase the power of the RF power supply; If the actual load power is greater than the standard load power, then the power of the RF power supply is reduced.

8. The method according to claim 7, characterized in that, The power regulation of the radio frequency power supply includes: The power of the RF power supply is adjusted based on the average ratio of the actual load power to the standard load power at each of the wafer-bearing stations.

9. The method according to claim 8, characterized in that, The power regulation of the radio frequency power supply includes: The power of the radio frequency power supply is regulated using the following formula: Wherein, W′ is the power after the RF power supply is regulated, W is the power before the RF power supply is regulated, n is the number of wafer-bearing stations, and W... i实 The actual load power of the i-th wafer-bearing station, W i标 The standard load power is the i-th station with a wafer.

10. The method according to claim 6, characterized in that, The set range is 0.5% to 2%.

11. A semiconductor process apparatus, characterized in that, include: The system includes an RF power supply, a matching unit, a multi-station chamber, a controller, and multiple detectors. The RF power supply is connected to the ungrounded electrodes of each station in the multi-station chamber through the matching unit. Each detector is connected to one of the ungrounded electrodes. The controller is connected to the multiple detectors and the RF power supply. The detector is used to detect the actual load power of the corresponding station. The controller includes at least one processor and at least one memory, the memory storing a computer program that, when executed by the processor, implements the steps of the method as described in any one of claims 1-10.

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